High-brightness OLED display device, method for manufacturing the same, and display device.

Abstract

To provide a high-brightness OLED display device, a preparation method thereof and a display apparatus, which relate to the technical field of OLED display.SOLUTION: A high-brightness OLED display device includes a substrate and an optical microcavity structure on the substrate, the optical microcavity structure includes an R optical microcavity area, a G optical microcavity area and a B optical microcavity area. A cavity length of the G optical microcavity area is greater than that of the B optical microcavity region and is smaller than that of the R optical microcavity area. The beneficial effects of the present invention are that RGB pixels can independently emit corresponding spectrums without the help of CF, realizing colorization control of silicon-based products, and improving light extraction efficiency and product yield.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to the technical field of OLED displays, and particularly to high-brightness OLED display devices, their manufacturing methods, and display devices.

Background Art

[0002] There are mainly three methods for OLED colorization technology: RGB-SBS (RGB pixel juxtaposition method, Side-By-Side), W+CF (color filter method, also called "white light + color filter" method), and CCM (COLOR conversion method, color conversion method). Currently, most silicon-based OLED full-color products adopt the first two methods.

[0003] When WOLED (white OLED) + CF (color filter) technology is adopted for silicon-based OLED full-color products, by using CMM (Common Metal Mask, common metal mask) to deposit a film layer on the entire surface, 2000 - 3000 PPI can be achieved. The drawback is that the optical microcavity of the evaporation part cannot be independently controlled, and a color film process needs to be used to realize RGB emission. As a result, about 70% of light emission loss occurs. When the brightness of the product exceeds 5000 nit, the product requirements cannot be met.

[0004] When silicon-based OLED full-color products adopt the RGB-SBS process route, independent microcavity control of the R, G, and B light-emitting materials is achieved, optimizing the overall performance (efficiency, lifespan, etc.) of the OLED device. A film layer deposited with a single metal mask (FMM) can achieve 2000-3000 PPI. However, because the pixel aperture of a single metal mask FMM is only 6-10 μm and the PDL Gap is only 2-4 μm, hole blocking problems occur after about 10 FMM depositions. At the same time, conventional RGB-SBS process route deposition requires 6 FMM operations, resulting in a decrease in product yield.

[0005] Therefore, current silicon-based OLED full-color products have the following problems: 1) In the W+CF process, when the RGB light-emitting layers emit light simultaneously, the WOLED device cannot emit the spectrum independently. Therefore, a CF (color filter) must be used to achieve independent RGB emission and color control, resulting in increased light loss and reduced luminous efficiency. 2) In the RGB-SBS process, when silicon-based products achieve high brightness, the single-pixel aperture is small, leading to hole blocking problems after approximately 10 layers of FMM deposition, resulting in low product yield.

[0006] For example, the patent document with publication number CN104241332A discloses a white light OLED display and a packaging method thereof. The white light OLED display comprises a glass cover plate, a color filter layer coated on the glass cover plate, a transparent protective layer covering the color filter layer, a desiccant layer disposed on the transparent protective layer, and a TFT substrate including a white light OLED layer, wherein the color filter layer, the transparent protective layer, and the desiccant layer are sandwiched between the glass cover plate and the TFT substrate including the white light OLED layer. [Overview of the project] [Problems that the invention aims to solve]

[0007] In the aforementioned OLED display, the RGB light-emitting layers emit light simultaneously, and therefore cannot emit spectrally independent light. To achieve independent RGB emission, a color filter (CF) must be used, which increases light loss and reduces luminous efficiency. Therefore, the problems described in this invention cannot be solved. [Means for solving the problem]

[0008] To solve the above technical problems, the present invention provides a high-brightness OLED display device, a method for manufacturing the same, and a display device, thereby enabling RGB pixels to independently emit corresponding spectra without using CF, realizing colorization of silicon-based products, and improving luminous efficiency.

[0009] To achieve the above objective, the technical solution adopted by the present invention to solve the technical problems is to provide the following high-brightness OLED display device.

[0010] The high-brightness OLED display device includes a substrate and an optical microcavity structure disposed on the substrate, wherein the optical microcavity structure includes an R optical microcavity region, a G optical microcavity region, and a B optical microcavity region, the cavity length of the G optical microcavity region being longer than the cavity length of the B optical microcavity region and shorter than the cavity length of the R optical microcavity region.

[0011] The optical microcavity structure includes an anode layer having total internal reflection capabilities, an organic layer disposed on the anode layer, and a cathode layer having reflective and translucent capabilities.

[0012] The anode layer comprises an R-anode, a G-anode, and a B-anode; the organic layer comprises organic layer I, organic layer II, and organic layer III; the cathode layer comprises an R-cathode, a G-cathode, and a B-cathode; the R optical microcavity region comprises the R-anode, organic layer I on the R-anode, and the R-cathode; the G optical microcavity region comprises the G-anode, organic layer II on the G-anode, and the G-cathode; and the B optical microcavity region comprises the B-anode, organic layer III on the B-anode, and the B-cathode.

[0013] The cavity length of the R optical microcavity region is the sum of the thicknesses of each film layer within the R optical microcavity region, the cavity length of the G optical microcavity region is the sum of the thicknesses of each film layer within the G optical microcavity region, the cavity length of the B optical microcavity region is the sum of the thicknesses of each film layer within the B optical microcavity region, and the thickness of each film layer satisfies the following equation: JPEG0007838847000001.jpg1247 Here, n i is the refractive index of each film layer, and d i φ is the thickness of each film layer, and φ is the phase shift of light reflection at the surfaces of the cathode and anode layers. TIFF0007838847000002.tif54 is the wavelength value at the highest point of the spectrum, and m is a positive integer representing the order of the microcavity.

[0014] The organic layer I and the organic layer II have the same structure, and the thickness of the R-anode is greater than the thickness of the G-anode.

[0015] The thickness of the G-anode is equal to the thickness of the B-anode, and the thickness of organic layer I or organic layer II is greater than the thickness of organic layer III.

[0016] A microcavity thickness compensation layer is provided in both the organic layer I and the organic layer II, and the microcavity thickness compensation layer includes an R-emitting layer and / or a G-emitting layer, and the thickness of both the R-emitting layer and the G-emitting layer is set in the range of 10 to 80 nm.

[0017] The thickness of the B-anode and the G-anode are both set in the range of 5 to 80 nm, and the thickness of the R-anode is set in the range of 50 to 200 nm.

[0018] The organic layer includes an OLED device unit I, an OLED device unit II, and a CGL (charge generation layer, CGL) layer connected between OLED device unit I and OLED device unit II, wherein OLED device unit I is connected to the anode layer and OLED device unit II is connected to the cathode layer.

[0019] The OLED device unit I includes an emissive layer I, one side of which is connected to the anode layer via an electron blocking layer I, a hole transport layer I, and a hole injection layer in that order, and the other side of which is connected to the CGL layer via a hole blocking layer I and an electron transport layer I in that order. The OLED device unit II includes an emissive layer II, one side of which is connected to the CGL layer via an electron blocking layer II and a hole transport layer II in that order, and the other side of which is connected to the cathode layer via a hole blocking layer II, an electron transport layer II, and an electron injection layer in that order.

[0020] The light-emitting layer I includes an R light-emitting layer and a B light-emitting layer I arranged in order from bottom to top, the R light-emitting layer covering the upper parts of the R-anode and G-anode, and the B light-emitting layer I covering the upper parts of the anode layer. The light-emitting layer II includes a G light-emitting layer and a B light-emitting layer II arranged in order from bottom to top, the G light-emitting layer covering the upper parts of the R-anode and G-anode, and the B light-emitting layer II covering the upper parts of the anode layer.

[0021] The light-emitting layer I includes a G light-emitting layer and a B light-emitting layer I provided in order from bottom to top. The G light-emitting layer covers the upper part of the R-anode and the G-anode, and the B light-emitting layer I covers the upper part of the anode layer. The light-emitting layer II includes an R light-emitting layer and a B light-emitting layer II provided in order from bottom to top. The R light-emitting layer covers the upper part of the R-anode and the G-anode, and the B light-emitting layer II covers the upper part of the anode layer.

[0022] The light-emitting layer I includes an R light-emitting layer that covers the upper part of the anode layer. The light-emitting layer II includes a G light-emitting layer and a B light-emitting layer II provided in order from bottom to top. The G light-emitting layer covers the upper part of the R-anode and the G-anode, and the B light-emitting layer II covers the upper part of the anode layer.

[0023] The light-emitting layer I includes a G light-emitting layer that covers the upper part of the anode layer. The light-emitting layer II includes an R light-emitting layer and a B light-emitting layer II provided in order from bottom to top. The R light-emitting layer covers the upper part of the R-anode and the G-anode, and the B light-emitting layer II covers the upper part of the anode layer. <统一代码 <统一代码

[0024] <统一代码 The light-emitting layer I includes a G light-emitting layer and a B light-emitting layer I provided in order from bottom to top. The G light-emitting layer covers the upper part of the R-anode and the G-anode, and the B light-emitting layer I covers the upper part of the anode layer. The light-emitting layer II includes an R light-emitting layer that covers the upper part of the anode layer. <统一代码 <统一代码

[0025] <统一代码 The light-emitting layer I includes an R light-emitting layer and a B light-emitting layer I provided in order from bottom to top. The R light-emitting layer covers the upper part of the R-anode and the G-anode, and the B light-emitting layer I covers the upper part of the anode layer. The light-emitting layer II includes a G light-emitting layer that covers the upper part of the anode layer. <统一代码 <统一代码

[0026] <统一代码 The optical microcavity structure is connected to the packaging layer through a CPL (capping layer) layer. <统一代码 <统一代码

[0027] <统一代码 The high-brightness OLED display device includes the OLED display device. <统一代码

[0028] A method for manufacturing a high-brightness OLED display device includes step 1, step 2, and step 3. Step 1: An anode layer containing an R-anode, a G-anode, and a B-anode is fabricated on the substrate, with the thickness of the R-anode being greater than the thickness of the G-anode and the B-anode. Step 2: This includes manufacturing an organic layer on an anode layer, manufacturing a B-emitting layer covering the anode layer using a CMM mask, and manufacturing an R-emitting layer and / or G-emitting layer covering the R-anode and G-anode using an FMM mask. Step 3: The cathode layer, CPL layer, and packaging layer are manufactured sequentially on the organic layer. [Effects of the Invention]

[0029] 1. According to the present invention, optical microcavity regions having different cavity lengths are set at corresponding positions of R, G, and B pixels on a substrate, wherein the cavity length of the G optical microcavity region is longer than that of the B optical microcavity region and shorter than that of the R optical microcavity region. By changing the cavity lengths of the corresponding optical microcavity regions, the R, G, and B pixels in the OLED display device each have corresponding microcavity optical path lengths, allowing the RGB pixels to independently emit corresponding spectra without using CFs, thereby enabling colorization of silicon-based products and improving luminous efficiency.

[0030] 2. In the present invention, the optical microcavity structure includes an anode layer, an organic layer on the anode layer, and a cathode layer. By adjusting the thickness of the corresponding R-anode, G-anode, and B-anode on the anode layer and combining them with organic layers of different thicknesses, the cavity length of the corresponding optical microcavity region is adjusted, and the thickness of the R-anode is greater than the thickness of the G-anode and B-anode. The R-anode and G-anode are covered above by an R-emissive layer and / or a G-emissive layer, which are manufactured using an FMM mask, and the FMM mask apertures are RG pixels, increasing the aperture ratio of the MM mask and improving the lifespan of the FMM mask. Throughout the process, the FMM mask is used up to twice to achieve independent RGB emission, avoiding hole blocking problems by evaporating the same position using different film layer masks and improving product yield. [Brief explanation of the drawing]

[0031] The following is a brief explanation of the contents of each accompanying drawing and the notation in the drawings of the present invention:

[0032] [Figure 1] This is a schematic diagram of Example 1 of the high-brightness OLED display device according to the present invention. [Figure 2] This is a schematic diagram of Example 2 of the high-brightness OLED display device according to the present invention. [Figure 3] These are RGB pixel spectral diagrams of the OLED display devices of Example 1 and Example 2 of the present invention. [Figure 4] This is a schematic diagram of Example 3 of the high-brightness OLED display device according to the present invention. [Figure 5] This is a schematic diagram of Embodiment 4 of the high-brightness OLED display device according to the present invention. [Figure 6] This is a schematic diagram of Example 5 of the high-brightness OLED display device according to the present invention. [Figure 7] This is a schematic diagram of Example 6 of the high-brightness OLED display device according to the present invention. [Figure 8] These are RGB pixel spectral diagrams of the OLED display devices of Examples 3 to 6 of the present invention. [Figure 9] This is a schematic diagram of the OLED display device of Comparative Example 1 of the present invention. [Figure 10] This is an RGB pixel spectral diagram of the OLED display device of Comparative Example 1 of the present invention. [Figure 11] This is a schematic diagram of the OLED display device of Comparative Example 2 of the present invention. [Figure 12] This is an RGB pixel spectral diagram of the OLED display device of Comparative Example 2 of the present invention. [Modes for carrying out the invention]

[0033] To further clarify the object, technical solutions, and advantages of the embodiments of the present invention, the technical solutions of the embodiments of the present invention will be described below clearly and completely, together with the drawings of the embodiments of the present invention. The following embodiments are used to illustrate the present invention and are not used to limit the scope of the present invention.

[0034] In this description of the present invention, the orientations and positional relationships indicated by terms such as "up," "down," "front," "back," "left," "right," "vertical," "inside," and "outside" are based on the orientations and positional relationships shown in the figures. This is merely for convenience in explaining the present invention and simplifying the explanation. It does not suggest or imply that the devices or elements mentioned must have a specific orientation or structure or operation based on a specific orientation, and therefore should not be interpreted as a limitation of the present invention.

[0035] It should be noted that, unless otherwise specified and limited, the terms “installation,” “association,” and “connection” in this specification should be understood in a broad sense. For example, they may be fixed connections, removable connections, or integrated connections; they may be mechanical or electrical connections; and they may be direct connections or indirect connections via an intermediate medium. Those skilled in the art will understand the specific meanings of these terms in this specification on a case-by-case basis.

[0036] Conventional technologies have the following problems with current silicon-based full-color OLED products: 1) In the W+CF process, the RGB light-emitting layers emit light simultaneously, so WOLED devices cannot emit light independently of the spectrum. To achieve independent RGB light emission and color control, a CF (color filter) must be used, resulting in significant light loss and reduced luminous efficiency. 2) In the RGB-SBS process, when silicon-based products achieve high brightness, the single-pixel aperture of the FMM mask is small, leading to hole blocking problems after approximately 10 layers of FMM deposition, resulting in reduced product retention. Therefore, to solve the above technical problems, the present invention provides a high-brightness OLED display device, a method for manufacturing the same, and a display device.

[0037] A specific embodiment of the present invention, as shown in Figures 1 to 7, provides a high-brightness OLED display device comprising a substrate 1 and an optical microcavity structure on the substrate 1. The optical microcavity structure includes an R optical microcavity region, a G optical microcavity region, and a B optical microcavity region, wherein the cavity length of the G optical microcavity region is longer than that of the B optical microcavity region and shorter than that of the R optical microcavity region. In the present invention, optical microcavity regions having different cavity lengths are set at corresponding positions of R, G, and B pixels on the substrate 1, and in the OLED display device, R, G, and B each have corresponding microcavity optical path lengths, allowing RGB pixels to independently emit corresponding spectra without using CF, thereby realizing colorization of silicon-based products and improving luminous efficiency.

[0038] Specifically, the optical microcavity structure includes an anode layer 2 with total internal reflection capabilities, an organic layer 3 provided on the anode layer 2, and a cathode layer 4 with reflective and translucent capabilities. The layer structure of the anode layer 2 includes Ag / ITO (Ag is a total internal reflection metal), Al / TiN / TO (Al is a total internal reflection metal), Al / TO / MoO3 (Al is a total internal reflection metal), Al / Co / MoO3 (Al is a total internal reflection metal), Al / Ni / MoO3 (Al is a total internal reflection metal), and Al / MoO3 (Al is a total internal reflection metal). The total internal reflection metals in the layer structure give the layer structure total internal reflection capabilities. The cathode layer 4 can be manufactured from materials such as Mg:Ag, Yb:Ag, Li:AL, Ga, ITO, and IZO, and the reflectivity of the cathode layer 4 is generally adjusted from 20% to 70% depending on the cathode thickness and ratio. The anode layer 2 includes an R-anode 21, a G-anode 22, and a B-anode 23. The organic layer 3 includes organic layer I, organic layer II, and organic layer III. The cathode layer includes an R-cathode, a G-cathode, and a B-cathode of the same thickness. The R optical microcavity region includes an R-anode 21, organic layer I on the R-anode 21, and an R-cathode. The G optical microcavity region includes a G-anode 22, organic layer II on the G-anode 22, and a G-cathode. The B optical microcavity region includes a B-anode 23, organic layer III on the B-anode 23, and a B-cathode. Organic layer I and organic layer II have the same film structure. The thickness of the R-anode 21 is greater than the thickness of the G-anode 22. The thickness of the G-anode 22 is equal to the thickness of the B-anode 23. The thickness of organic layer I or organic layer II is greater than the thickness of organic layer III. Microcavity thickness compensation layers are provided in both organic layer I and organic layer II. The microcavity thickness compensation layer includes an R-emissive layer (R-EML), a G-emissive layer (G-EML), or a combination of an R-emissive layer (R-EML) and a G-emissive layer (G-EML). The R-emissive layer (R-EML) and the G-emissive layer (G-EML) are laminated when combined.

[0039] The present invention adjusts the thicknesses of organic layer I, organic layer II, and mechanical layer III under the action of a microcavity thickness compensation layer by adjusting the thicknesses of the corresponding R anode 21, G anode 22, and B anode 23 on anode layer 2, so that the thickness of R-anode 21 is greater than the thicknesses of G anode 22 and B anode 23, so that the tops of R-anode 21 and G-anode 22 are covered by the R-emissive layer (R-EML) and / or G-emissive layer (G-EML), thereby adjusting the cavity length of the corresponding optical microcavity region, so that R, G, and B pixels have corresponding microcavity optical paths, and RGB pixels can emit their corresponding spectra independently without using CF. The R-emissive layer (R-EML) and G-emissive layer (G-EML) are manufactured using an FMM mask, and the other film layers are manufactured using a CMM mask, so that the FMM mask apertures become RG pixels, increasing the aperture ratio of the MM mask and improving the lifespan of the FMM mask. The entire process uses up to two FMM masks to achieve independent RGB illumination, avoiding hole blocking issues by using different film layer masks to evaporate the same location, and improving product yield.

[0040] Specifically, the cavity length of the R optical microcavity region, the cavity length of the G optical microcavity region, or the cavity length of the B optical microcavity region is the sum of the thicknesses of each film layer within the R optical microcavity region, the G optical microcavity region, or the B optical microcavity region, respectively, and the thickness of each film layer satisfies the following OLED microcavity calculation formula. JPEG0007838847000003.jpg1247 Here, n i is the refractive index of each film layer, and d i φ is the thickness of each film layer, and φ is the phase shift of light reflection on the surfaces of cathode layer 4 and anode layer 2. TIFF0007838847000004.tif54 is the wavelength value at the peak of the spectrum, and m is a positive integer representing the order of the microcavity. The wavelengths of R, G, and B are 620 nm, 525 nm, and 460 nm, respectively. Light can be enhanced only if the thickness and wavelength of each film layer in the optical microcavity structure satisfy the above equation. When calculating the thickness of each film layer, the phase shift of light reflection at the surfaces of cathode layer 4 and anode layer 2 is ignored. For JPEG0007838847000005.jpg11166, n is the average refractive index of the corresponding optical microcavity region, and d is the cavity length of the corresponding optical microcavity region.

[0041] If the thicknesses and refractive indices of the other film layers on the organic layer 3, excluding the thicknesses of the R-EML and G-EML, are known, and the materials of the R-EML and G-EML are known (i.e., their refractive indices are known), then the thicknesses of the R-EML and / or G-EML can be calculated according to the above formula. JPEG0007838847000006.jpg15166The cavity length of the B optical microcavity region and the cavity length of the G optical microcavity region can be calculated separately, and the difference between the cavity length of the B optical microcavity region and the cavity length of the G optical microcavity region is the thickness of the microcavity thickness compensation layer.According to the calculations, the thickness of both the R emissive layer (R-EML) and the G emissive layer (G-EML) is set to 10-80 nm.The thickness of the B-anode 23 and the G-anode 22 are constant and both are set to 5-80 nm.

[0042] If the thicknesses of the R-emissive layer (R-EML) and G-emissive layer (G-EML) are calculated, and the thickness of the R-anode 21 is unknown, but the thicknesses and refractive indices of the other film layers on the organic layer 3 are known, then the thickness of the R-anode 21 is calculated according to the above formula. Of course, Using JPEG0007838847000007.jpg15166, the cavity lengths of the G optical microcavity region and the R optical microcavity region can also be calculated separately. The difference in cavity lengths between the two optical microcavity regions is either the difference between the thickness of R anode 21 and the thickness of R anode 22, or the difference between the thickness of R anode 21 and the thickness of B anode 23. The calculated thickness of R anode 21 is 50-200 nm.

[0043] The specific configuration of the high-brightness OLED display device described above will be explained in detail through the following embodiments.

[0044] Example 1 As shown in Figure 1, an embodiment of the present invention provides a high-brightness OLED display device including a substrate 1 (driving substrate 1, not shown). The substrate 1 is provided with an anode layer 2 including an R-anode 21, a G-anode 22, and a B-anode 23. The anode layer 2 is formed of ITO or IZO. The thickness of the G-anode 22 is equal to the thickness of the B-anode 23, which is 10 nm. The thickness of the R-anode 21 is thicker than the thickness of the G-anode 22 and the B-anode 23, which is 70 nm. An organic layer 3 consisting of stacked film layers is provided on the anode layer 2. A cathode layer 4 is provided on the organic layer 3. The cathode layer 4 is connected to a packaging layer 6 via a CPL layer 5.

[0045] Specifically, the film layer structure of the organic layer 3 includes OLED device unit I-31, OLED device unit II-33, and a CGL layer 32 connected between BOLED device unit I-31 and OLED device unit II-33. OLED device unit I-31 is connected to the anode layer 2. OLED device unit II-33 is connected to the cathode layer 4, and the two OLED device units are connected in series via the CGL layer 32 to form the light-emitting organic layer 3.

[0046] OLED device unit I-31 includes an emissive layer I-314. One side of the emissive layer I-314 is connected to the anode layer 2 via an electron blocking layer I-313, a hole transport layer I-312, and a hole injection layer 311 in that order. The other side of the emissive layer I-314 is connected to the CGL layer 32 via a hole blocking layer I-315 and an electron transport layer I-316 in that order. Of course, the OLED device unit I-31 is not limited to the above film layer structure, and other film layer structures can be added or removed as needed. OLED device unit II-33 includes an emissive layer II-333. One side of the emissive layer II-333 is connected to the CGL layer 32 via an electron blocking layer II-332 and a hole transport layer II-331 in that order. The other side of the light-emitting layer II-333 is connected to the cathode layer 4 via the hole-blocking layer II-334, the electron-transport layer II-335, and the electron-injection layer 336 in that order. Of course, the OLED device unit II-33 is not limited to the above film layer structure, and other film layer structures can be added as needed.

[0047] The light-emitting layer I-314 includes an R-emitting layer (R-EML) and a B-emitting layer I (B-EMLI) arranged in order from bottom to top. The R-emitting layer (R-EML) covers the upper part of the R-anode 21 and G-anode 22, and the B-emitting layer I (B-EMLI) covers the upper part of the anode layer 2. The R-emitting layer (R-EML) is fabricated using a red light host material and a red light doping material having electron transport properties (e.g., CBP, TCTA, DFC, TAZ, BCP, OXD7, etc.). The B-emitting layer I (B-EMLI) is fabricated using a blue light host material and a blue light doping material having electron transport properties (e.g., ADN, TBADN, MADN, BDSA, BTSA, etc.). The absolute difference in LUMO energy levels between the host materials of the R-emissive layer (R-EML) and B-emissive layer I (B-EMLI) is less than 0.4 eV, allowing electrons to move from B-emissive layer I (B-EMLI) to the R-emissive layer (R-EML). The absolute difference in HOMO energy levels between the host materials of the R-emissive layer (R-EML) and B-emissive layer I (B-EMLI) is greater than 0.4 eV, making it impossible for holes to move from R-emissive layer (R-EML) to B-emissive layer I (B-EMLI).

[0048] The light-emitting layer II-333 includes a G light-emitting layer (G-EML) and a B light-emitting layer II (B-EMLII) arranged in order from bottom to top. The G light-emitting layer (G-EML) covers the top of the R-anode 21 and G-anode 22. The B light-emitting layer II (B-EMLII) covers the top of the anode layer 2. The G light-emitting layer (G-EML) is manufactured using a bipolar green light host material and a green light doping material (e.g., CBP, TCTA, DFC, TAZ, BCP, OXD7, etc.). The B light-emitting layer II (B-EMLII) is manufactured using a blue light host material and a blue light doping material having electron transport properties. The absolute difference in LUMO energy levels between the host materials of the G-EML (G-EML) and B-EMLII (B-EMLII) is less than 0.4 eV, allowing electrons to move from B-EMLII to G-EML. The absolute difference in HOMO energy levels between the host materials of the G-EML (G-EML) and B-EMLII (B-EMLII) is greater than 0.4 eV, making it impossible for holes to move from G-EML to B-EMLII.

[0049] The thickness of the R-EML and G-EML can be calculated according to the OLED microcavity calculation formula, and both the R-EML and G-EML thicknesses are set to 30nm. Since both the R-EML and G-EML are manufactured using FMM masks and the apertures are RG pixels, the R-EML and G-EML can be deposited above the R anode 21 and G anode 22 respectively, increasing the aperture ratio of the MM mask and improving the lifespan of the FMM mask. In the entire process, only two FMM masks are used to achieve independent RGB emission, avoiding the hole blocking problem caused by evaporating the same position using different film layer masks and improving product yield. Furthermore, the light-emitting layers on OLED device unit I-31 and OLED device unit II-33 both include a B-EML, increasing the luminescence efficiency of blue light.

[0050] The method for manufacturing the above-mentioned high-brightness OLED display device includes the following steps.

[0051] Step 1: An anode layer 2 including an R anode 21, a G anode 22, and a B anode 23 is fabricated on substrate 1. Here, the thickness of the R anode 21 is greater than the thickness of the G anode 22 and the B anode 23.

[0052] Step 2: The process includes manufacturing an organic layer 3 on an anode layer 2, manufacturing a B-emitting layer covering the anode layer 2 using a CMM mask, and manufacturing an R-emitting layer (R-EML) and / or a G-emitting layer (G-EML) covering the R-anode 21 and G-anode 22 using an FMM mask.

[0053] Specifically, 1) Manufacturing of OLED device unit I-31: (1) Using a CMM mask, a hole injection layer 311, a hole transport layer I-312, and an electron blocking layer I-313 are formed sequentially on the anode layer 2. (2) Using an FMM mask, an R-emissive layer (R-EML) with a thickness of 30 nm is formed on the electron blocking layer I-313. The aperture of the FMM mask is the RG pixel. The R-emissive layer (R-EML) can be deposited directly above the R-anode 21 and G-anode 22. (3) Using a CMM mask, the B-emissive layer I (B-EMLI), hole blocking layer I-315, and electron transport layer I-316 are formed sequentially on the electron blocking layer I-313 and the R-emissive layer (R-EML). The B-emissive layer I (B-EMLI) employs a host material of an electron transport type material to allow electrons to be transferred to the R-emissive layer (R-EML).

[0054] 2) Fabricate the CGL layer 32. Fabricate the CGL layer 32 on the electron transport layer I-316 using a CMM mask.

[0055] 3) Manufacture the OLED device unit II-33. (1) Using a CMM mask, a hole transport layer II-331 and an electron blocking layer II-332 are sequentially formed on the CGL layer 32. (2) Using an FMM mask, a 30 nm thick G-emissive layer (G-EML) is fabricated on the electron blocking layer II-332. The aperture of the FMM mask is an RG pixel, and the G-emissive layer (G-EML) can be deposited directly above the R-anode 21 and G-anode 22. (3) Using a CMM mask, the B-emissive layer II (B-EMLII), hole blocking layer II-334, and electron injection layer 336 are formed sequentially on the electron blocking layer II-332 and the G-emissive layer (G-EML). The B-emissive layer II (B-EMLII) employs an electron transport type material as its host material to allow electrons to be transferred to the G-emissive layer (G-EML).

[0056] Step 3: The cathode layer 4, CPL layer 5, and packaging layer 6 are formed sequentially on the organic layer 3.

[0057] Example 2 As shown in Figure 2, embodiments of the present invention provide a high-brightness OLED display device. The structures of the light-emitting layers I314 and II333 differ from those of the light-emitting layers I314 and II333 of Example 1. The light-emitting layers I314 and II333 of Example 1 have been replaced; that is, light-emitting layer I314 includes a G light-emitting layer (G-EML) and a B light-emitting layer I (B-EMLI) arranged in order from bottom to top. The G light-emitting layer (G-EML) covers the upper part of the R-anode 21 and G-anode 22. The B light-emitting layer I (B-EMLI) covers the upper part of the anode layer 2. Light-emitting layer II333 includes an R light-emitting layer (R-EML) and a B light-emitting layer II (B-EMLII) arranged in order from bottom to top, with the R light-emitting layer (R-EML) covering the upper part of the R-anode 21 and G-anode 22. The B-emissive layer II (B-EMLII) covers the upper part of the anode layer 2.

[0058] The manufacturing method for the high-brightness OLED display device is specifically adjusted according to the structural adjustments of the light-emitting layer I-314 and the light-emitting layer II-333, so it will not be repeated here.

[0059] Figure 3 shows the RGB pixel spectra of the high-brightness OLED display devices obtained in Example 1 and Example 2. The spectra can be seen to contain three discrete bands: the blue light band, the green light band, and the red light band. The blue light band peaks at 460 nm, the green light band peaks at 525 nm, and the red light band peaks at 620 nm. At wavelengths other than the blue light band peak, there are few impurity peaks, achieving the objective of independent RGB emission spectra.

[0060] Table 1 shows the optical performance parameters of the high-brightness OLED display device described above.

[0061] [Table 1] Optical performance parameters of OLED display devices in Example 1 and Example 2

[0062] [Table 1]

[0063] As can be seen from the table above, when CF is not used, the DCI-P3 color gamut of the display device of the present invention exceeds 100%, thus meeting the product requirements.

[0064] Example 3 As shown in Figure 4, an embodiment of the present invention provides a high-brightness OLED display device. The difference from Embodiment 1 is the structure of the light-emitting layer I-314. Light-emitting layer I-314 includes an R light-emitting layer (R-EML) covering the upper part of the anode layer 2. The structure of light-emitting layer II-333 is the same as the structure of light-emitting layer II333 in Embodiment 1. Light-emitting layer II333 includes a G light-emitting layer (G-EML) and a B light-emitting layer II (B-EMLII) arranged in order from bottom to top. The G light-emitting layer (G-EML) covers the upper part of the R-anode 21 and G-anode 22. The B light-emitting layer II (B-EMLII) covers the upper part of the anode layer 2. The thickness of the R light-emitting layer (R-EML) is 30 nm, the thickness of the G light-emitting layer (G-EML) is 55 nm, and the thickness of the R-anode 21 is 70 nm. The thicknesses of the other film layer structures are the same as the thicknesses of the corresponding film layers in Embodiment 1.

[0065] The method for manufacturing the OLED device unit I31 in the manufacturing method of the high-brightness OLED display device in this embodiment differs from the method for manufacturing the OLED device unit I31 in Embodiment 1. The manufacturing method of the OLED device unit I31 in this embodiment is as follows.

[0066] (1) Using a CMM mask, a hole injection layer 311, a hole transport layer I-312, and an electron blocking layer I-313 are formed sequentially on the anode layer 2.

[0067] (2) Using a CMM mask, a 30 nm thick R-emissive layer (R-EML) is fabricated over the entire surface of the electron blocking layer I-313.

[0068] (3) Using a CMM mask, a B-emissive layer I (B-EMLI), a hole blocking layer I-315, and an electron transport layer I-316 are formed sequentially on the R-emissive layer (R-EML). The B-emissive layer I (B-EMLI) employs a host material of an electron transport type material to allow electrons to be transferred to the R-emissive layer (R-EML).

[0069] Example 4 As shown in Figure 5, an embodiment of the present invention provides a high-brightness OLED display device. The difference from Example 3 is that the structures of the light-emitting layers I314 and II333 of Example 3 are swapped. That is, light-emitting layer I-314 includes a G light-emitting layer (G-EML) and a B light-emitting layer I (B-EMLI) arranged in order from bottom to top. The G light-emitting layer (G-EML) covers the upper part of the R-anode 21 and G-anode 22. The B light-emitting layer I (B-EMLI) covers the upper part of the anode layer 2. Light-emitting layer II-333 includes an R light-emitting layer (R-EML) that covers the upper part of the anode layer 2. The manufacturing method of the high-brightness OLED display device is specifically adjusted according to the structure of light-emitting layers I-314 and II-333, so it will not be repeated here.

[0070] Example 5 As shown in Figure 6, an embodiment of the present invention provides a high-brightness OLED display device. The difference from Example 2 is that the structure of the light-emitting layer I-314 is different; that is, light-emitting layer I-314 includes a G light-emitting layer (G-EML) covering the anode layer 2, and light-emitting layer II-333 has the same structure as in Example 2. Light-emitting layer II-333 includes an R light-emitting layer (R-EML) and a B light-emitting layer II (B-EMLII) arranged in order from bottom to top. The R light-emitting layer (R-EML) covers the R-anode 21 and the G-anode 22. The B light-emitting layer II (B-EMLII) covers the anode layer 2. The thickness of the R light-emitting layer (R-EML) is 55 nm, the thickness of the G light-emitting layer (G-EML) is 30 nm, and the thicknesses of the other film layers are the same as the thicknesses of the corresponding film layers in Example 3.

[0071] The method for manufacturing the OLED device unit I-31 in the manufacturing method of the high-brightness OLED display device in this embodiment differs from the method for manufacturing the OLED device unit I-31 in Embodiment 2. The OLED device unit I-31 in this embodiment is manufactured as follows.

[0072] (1) Using a CMM mask, a hole injection layer 311, a hole transport layer I-312, and an electron blocking layer I-313 are formed sequentially on the anode layer 2.

[0073] (2) Using a CMM mask, a 30 nm thick G-EML is fabricated over the entire surface of the electron blocking layer I-313.

[0074] (3) Using a CMM mask, a hole blocking layer I-315 and an electron transport layer I-316 are sequentially formed on the G-emissive layer (G-EML).

[0075] Example 6 As shown in Figure 7, an embodiment of the present invention provides a high-brightness OLED display device. The difference from Example 5 is that the structures of the light-emitting layers I-314 and II-333 of Example 5 are swapped. That is, light-emitting layer I-314 includes an R-emissive layer (R-EML) and a B-emissive layer I (B-EMLI) arranged in order from bottom to top. The R-emissive layer (R-EML) covers the upper part of the R-anode 21 and G-anode 22, and the B-emissive layer I (B-EMLI) covers the upper part of the anode layer 2. Light-emitting layer II-333 covers the upper part of the anode layer 2 and includes a G-emissive layer (G-EML).

[0076] The manufacturing method for the high-brightness OLED display device is specifically adjusted according to the structure of the light-emitting layer I-314 and the light-emitting layer II-333, so it will not be repeated here.

[0077] Figure 8 shows the RGB pixel spectra of the high-brightness OLED display devices obtained in Examples 3 to 6 described above. In the spectra, the blue light band reaches a peak at a wavelength of 460 nm, the green light band reaches a peak at a wavelength of 530 nm, and the red light band reaches a peak at a wavelength of 620 nm. The number of impurity peaks at wavelengths other than the peaks is reduced, achieving the objective of independent RGB emission spectra.

[0078] Table 2 shows the optical performance parameters of the high-brightness OLED display device described above.

[0079] [Table 2] Optical performance parameters of OLED display devices in Examples 3 to 6

[0080] [Table 2]

[0081] As can be seen from the table above, when CF is not used, the DCI-P3 color gamut of the display device of the present invention exceeds 100%, thus meeting the product requirements.

[0082] Example 7 Embodiments of the present invention provide a high-brightness OLED display device including the OLED display device described in any one of Examples 1 to 6.

[0083] Examples of the aforementioned display devices include liquid crystal panels, monitors, televisions, digital photo frames, navigators, computers, collections, in-car displays, cameras, and other products with display functions, and are used in the field of optical displays.

[0084] Comparative Example 1 This comparative example is an OLED display device in which a color filter (CF) is added to a white light OLED (WOLED). Its structure is shown in Figure 9. The substrate, anode layer, hole injection layer (HIL), hole transport layer (HTL), electron blocking layer (EBL), B-emissive layer (B-EML), hole blocking layer (HBL), electron transport layer (ETL), charge generation layers (N-CGL and P-CGL), hole transport layer (HTL), electron blocking layer (EBL), G-emissive layer (G-EML), R-emissive layer (R-EML), hole blocking layer (HBL), electron transport layer (ETL), electron injection layer (EIL), cathode, packaging layer (TFE), and CF layer are stacked in order from bottom to top. A capping layer (CPL) (not shown) is provided between the cathode and the packaging layer (TFE). The thicknesses of the R anode, G anode, and B anode on the anode layer are equal to the thicknesses of the G anode and B anode in Example 1. The difference between the organic layer and Example 1 is that both the R emissive layer (R-EML) and the G emissive layer (G-EML) are deposited over the entire surface, and a CF layer is provided on the packaging layer, so the thickness of each film layer in organic layer 3 is equal to the thickness of the corresponding film layer in Example 1.

[0085] Figure 10 shows the RGB pixel spectrum of the OLED display device. The spectrum can be seen to contain three discrete bands: the blue light band, the green light band, and the red light band. The blue light band reaches a peak at a wavelength of 460 nm, the green light band reaches a peak at a wavelength of 530 nm, and the red light band reaches a peak at a wavelength of 620 nm. In addition, there are many impurity peaks at wavelengths other than the peaks, resulting in high luminescence loss and reduced luminous efficiency.

[0086] Comparative Example 2 This comparative example is an OLED display device with the structure shown in Figure 11. The substrate, anode layer, hole injection layer (HIL), hole transport layer (HTL), R-emissive layer (R-EML), G-emissive layer (G-EML), electron transport layer (ETL), charge generation layer (CGL), hole injection layer (HIL), hole transport layer (HTL), B-emissive layer (B-EML), electron transport layer (ETL), electron injection layer (EIL), cathode, and packaging layer (TFE) are stacked in order from bottom to top. A capping layer (CPL) (not shown) is provided between the cathode and the packaging layer (TFE). The thickness of each film layer in the organic layer between the anode layer and the cathode is equal to the thickness of the corresponding film layer in Example 1. The thickness of the G anode on the anode layer is greater than the thickness of the B anode and less than the thickness of the R anode. The thickness of the R-anode is 120 nm, the G-anode is 70 nm, and the B-anode is 10 nm. By changing the thickness of the anode corresponding to each pixel, the cavity length of the microcavity can be adjusted to obtain a light modulation effect.

[0087] Figure 12 shows the RGB pixel spectrum of the OLED display device. The spectrum contains three discrete bands: the blue light band, the green light band, and the red light band. The blue light band peaks at a wavelength of 460 nm, and the green light band peaks at a wavelength of 460 nm. The red light band peaks at a wavelength of 530 nm, and the red light band peaks at a wavelength of 620 nm. In addition, at wavelengths other than the peaks, there are many impurity peaks, resulting in increased luminescence loss and a decrease in luminous efficiency. To reduce the impurity peaks, it is necessary to use an additional CF layer.

[0088] Table 3 shows the optical performance parameters of the OLED display devices in Comparative Example 1 and Comparative Example 2.

[0089] [Table 3] Optical performance parameters of OLED display devices for Comparative Example 1 and Comparative Example 2

[0090] [Table 3]

[0091] When comparing the optical performance parameters of the OLED display devices of Comparative Examples 1 and 2 with those of the OLED display devices of Examples 1 to 6, the luminous efficiency of each pixel of the OLED display devices of Examples 1 to 6 (higher eff value indicates higher luminous efficiency) is significantly higher than that of Comparative Examples 1 and 2, indicating that the product of the present invention can achieve higher brightness.

[0092] Therefore, in this comparative example, the cavity length of the microcavity for optical modulation is adjusted only by changing the thickness of the corresponding pixels on the anode layer, and the resulting RGB pixel spectrum has many impurity peaks at wavelengths other than the peak, resulting in increased luminescence loss and decreased luminescence efficiency. In Examples 1 to 6 of the present invention, optical modulation is performed by adjusting the cavity length of the microcavity by simultaneously changing the thickness of the anode layer and the emissive layer, so that the emissive layer of the corresponding pixel emits light while the emissive layer of other pixels does not. As a result, the resulting RGB pixel spectrum has fewer impurity peaks at wavelengths other than the peak, there is no need to use an additional CF layer to weaken the impurity peaks, and a wide color gamut and high brightness are obtained.

[0093] The above description illustrates only a part of the principles of the present invention, and this description is not intended to limit the present invention to the specific structure and scope shown. Therefore, all available corresponding modifications and equivalents fall within the scope of the present invention. [Explanation of symbols]

[0094] 1. Substrate 2. Anode layer 21. R-anode 22. G-anode 23. B-anode 3. Organic layer 31. OLED device unit I 311. Hole injection layer 312. Hole transport layer I 313. Electron blocking layer I 314. Emitting layer I 315. Hole blocking layer I 316. Electron transport layer I 32. CGL layer 33. OLED device unit II 331. Hole transport layer II 332. Electron blocking layer II 333. Emitting layer II 334. Hole blocking layer II 335.Electron transport layer II 336.Electron injection layer 4. Cathode layer 5. CPL layer 6. Packaging layer

Claims

1. A high-brightness OLED display device, circuit board and The substrate includes an optical microcavity structure, The optical microcavity structure includes an R optical microcavity region, a G optical microcavity region, and a B optical microcavity region. The cavity length of the G optical microcavity region is longer than the cavity length of the B optical microcavity region and shorter than the cavity length of the R optical microcavity region. The optical microcavity structure includes an anode layer having total internal reflection functionality, an organic layer disposed on the anode layer, and a cathode layer having reflective and translucent functionality, wherein the anode layer includes an R-anode, a G-anode, and a B-anode, the organic layer includes organic layer I, organic layer II, and organic layer III, the cathode layer includes an R-cathode, a G-cathode, and a B-cathode, the R optical microcavity region includes the R-anode, organic layer I on the R-anode, and the R-cathode, the G optical microcavity region includes the G-anode, organic layer II on the G-anode, and the G-cathode, and the B optical microcavity region includes the B-anode, organic layer III on the B-anode, and the B-cathode. The organic layer includes an OLED device unit I, an OLED device unit II, and a CGL layer connected between OLED device unit I and OLED device unit II, wherein OLED device unit I is connected to the anode layer and OLED device unit II is connected to the cathode layer. The OLED device unit I includes an emissive layer I, one side of which is connected to the anode layer via an electron blocking layer I, a hole transport layer I, and a hole injection layer in that order, and the other side of which is connected to the CGL layer via a hole blocking layer I and an electron transport layer I in that order. The OLED device unit II includes an emissive layer II, one side of which is connected to the CGL layer via an electron blocking layer II and a hole transport layer II in that order, and the other side of which is connected to the cathode layer via a hole blocking layer II, an electron transport layer II, and an electron injection layer in that order. The light-emitting layer I and the light-emitting layer II are configured in one of the following ways: In method 1, the light-emitting layer I includes an R light-emitting layer and a B light-emitting layer I arranged in order from bottom to top, the R light-emitting layer covers the upper part of the R-anode and G-anode, the B light-emitting layer I covers the upper part of the anode layer, the light-emitting layer II includes a G light-emitting layer and a B light-emitting layer II arranged in order from bottom to top, the G light-emitting layer covers the upper part of the R-anode and G-anode, the B light-emitting layer II covers the upper part of the anode layer, In method 2, the light-emitting layer I includes a G light-emitting layer and a B light-emitting layer I arranged in order from bottom to top, the G light-emitting layer covering the upper part of the R-anode and G-anode, the B light-emitting layer I covering the upper part of the anode layer, and the light-emitting layer II includes an R light-emitting layer and a B light-emitting layer II arranged in order from bottom to top, the R light-emitting layer covering the upper part of the R-anode and G-anode, and the B light-emitting layer II covering the upper part of the anode layer. In method 3, the light-emitting layer I includes an R light-emitting layer covering the upper part of the anode layer, the light-emitting layer II includes a G light-emitting layer and a B light-emitting layer II arranged in order from bottom to top, the G light-emitting layer covering the upper part of the R-anode and G-anode, and the B light-emitting layer II covering the upper part of the anode layer. In method 4, the light-emitting layer I includes a G light-emitting layer covering the upper part of the anode layer, the light-emitting layer II includes an R light-emitting layer and a B light-emitting layer II arranged in order from bottom to top, the R light-emitting layer covering the upper part of the R-anode and G-anode, and the B light-emitting layer II covering the upper part of the anode layer. In method 5, the light-emitting layer I includes a G light-emitting layer and a B light-emitting layer I arranged in order from bottom to top, the G light-emitting layer covering the R-anode and the upper part of the G-anode, the B light-emitting layer I covering the upper part of the anode layer, and the light-emitting layer II including an R light-emitting layer covering the upper part of the anode layer. In the method 6, the light-emitting layer I includes an R light-emitting layer and a B light-emitting layer I arranged in order from bottom to top, the R light-emitting layer covers the upper part of the R-anode and G-anode, the B light-emitting layer I covers the upper part of the anode layer, and the light-emitting layer II includes a G light-emitting layer that covers the upper part of the anode layer, making it a high-brightness OLED display device. The high-brightness OLED display device according to feature 2.

2. The cavity length of the R optical microcavity region is the sum of the thicknesses of each film layer within the R optical microcavity region, the cavity length of the G optical microcavity region is the sum of the thicknesses of each film layer within the G optical microcavity region, the cavity length of the B optical microcavity region is the sum of the thicknesses of each film layer within the B optical microcavity region, and the thickness of each film layer satisfies the following equation: The high-brightness OLED display device according to claim 1, characterized in that, here, ni is the refractive index of each film layer, di is the thickness of each film layer, φ is the phase shift of light reflection at the surfaces of the cathode layer and anode layer, λ is the wavelength value at the highest value of the spectrum, and m is a positive integer and the order of the microcavity.

3. The high-brightness OLED display device according to claim 1, characterized in that the organic layer I and the organic layer II have the same structure, and the thickness of the R-anode is greater than the thickness of the G-anode.

4. The high-brightness OLED display device according to claim 1, characterized in that the thickness of the G-anode is equal to the thickness of the B-anode, and the thickness of the organic layer I or organic layer II is greater than the thickness of the organic layer III.

5. The high-brightness OLED display device according to claim 4, characterized in that a microcavity thickness compensation layer is provided on both the organic layer I and the organic layer II, the microcavity thickness compensation layer includes an R light-emitting layer and / or a G light-emitting layer, and the thickness of both the R light-emitting layer and the G light-emitting layer are set in the range of 10 to 80 nm.

6. The high-brightness OLED display device according to claim 4, characterized in that the thickness of the B-anode and the G-anode are both set in the range of 5 to 80 nm, and the thickness of the R-anode is set in the range of 50 to 200 nm.

7. The high-brightness OLED display device according to claim 1, characterized in that the optical microcavity structure is connected to the packaging layer via a CPL layer.

8. A high-brightness OLED display device including the OLED display device according to any one of claims 1 to 7.

9. A method for manufacturing a high-brightness OLED display device according to any one of claims 1 to 7, Step 1 involves manufacturing an anode layer on a substrate containing an R-anode, a G-anode, and a B-anode, Step 2 involves manufacturing by stacking an organic layer on an anode layer, Step 3 involves sequentially manufacturing a cathode layer, a CPL layer, and a packaging layer on an organic layer, Step 2 includes manufacturing a B-emitting layer covering the anode layer using a CMM mask, and manufacturing an R-emitting layer and / or a G-emitting layer covering the R-anode and G-anode using an FMM mask. A method for manufacturing a high-brightness OLED display device, characterized in that the thickness of the R-anode is greater than the thickness of the G-anode and the B-anode.

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