Adhesive tape for semiconductor processing, and method for manufacturing electronic components

Abstract

To provide a semiconductor processing adhesive tape used when processing a semiconductor device in a state where for example a support and a semiconductor device are fixed, that is a semiconductor processing adhesive tape that easily peels at an interface with the semiconductor device in advance the interface with the support and a manufacturing method of an electronic component using the semiconductor processing adhesive tape.SOLUTION: A semiconductor processing adhesive tape comprises a substrate, an adhesive layer (A) containing a gas generating agent laminated on one surface of the substrate, and an adhesive layer (B) laminated on the other surface of the substrate, wherein the substrate has a release treatment part on the surface in contact with the adhesive layer (A) containing the gas generating agent, and the adhesive layer (A) containing the gas generating agent is adhesive force to the glass plate of 0.1 N / inch or more.SELECTED DRAWING: Figure 4

Description

[Technical Field]

[0001] This invention relates to an adhesive tape for semiconductor processing and a method for manufacturing electronic components. [Background technology]

[0002] In the manufacturing process of electronic components, semiconductor devices such as wafers are often fixed to a support to facilitate handling and prevent damage during processing. For example, when a thick film wafer cut from a high-purity silicon single crystal is ground down to a predetermined thickness to form a thin film wafer, the thick film wafer is fixed to the support via adhesive tape.

[0003] The adhesive tape used to fix the support and the semiconductor device is required to have high adhesion to firmly fix the semiconductor device during the processing process, and to be able to be peeled off without damaging the semiconductor device after the process is completed (hereinafter also referred to as "high adhesion and easy peeling"). As an example of such adhesive tapes, Patent Document 1 describes a double-sided adhesive tape containing a gas-generating agent that generates gas upon stimulation on at least one side. Patent Document 2 also describes a double-sided adhesive tape for semiconductor processing in which the adhesive layer on the side that adheres to the support plate contains a gas-generating agent that generates gas upon stimulation, and the substrate on the side that comes into contact with the adhesive layer on the side that adheres to the support plate is subjected to a dot-shaped release treatment that satisfies certain conditions. [Prior art documents] [Patent Documents]

[0004] [Patent Document 1] Japanese Patent Publication No. 2003-231872 [Patent Document 2] International Publication No. 2009 / 075196 [Overview of the project] [Problems that the invention aims to solve]

[0005] In recent years, the manufacturing process for electronic components has required keeping semiconductor devices on a support until just before they are retrieved after processing. Furthermore, there is a demand for reducing the number of processing steps. However, conventional adhesive tapes, such as those described in Patent Documents 1 and 2, are adhesive tapes that are used by bonding an adhesive layer containing a gas generating agent to a support, and after processing the semiconductor device, gas is generated from the adhesive layer containing the gas generating agent. When such adhesive tapes are used, the tape first peels off at the interface with the support due to the generation of gas, and then the adhesive tape is peeled off from the processed semiconductor device. Therefore, it is difficult to keep the processed semiconductor device on the support until just before recovery, and the number of steps required to recover the processed semiconductor device is also large. While it is conceivable to attach an adhesive layer containing a gas-generating agent to a semiconductor device rather than a support, in this case, attempting to irradiate the adhesive layer containing the gas-generating agent with light would result in the light being irradiated not only through the support but also through the adhesive tape's substrate. Therefore, it would be difficult to generate sufficient gas, and the design flexibility of the adhesive tape would also be reduced.

[0006] The present invention aims to provide a semiconductor processing adhesive tape, which can be used, for example, when processing a semiconductor device while the support and the semiconductor device are fixed together, and which peels off easily at the interface with the semiconductor device before the interface with the support after processing the semiconductor device. The present invention also aims to provide a method for manufacturing electronic components using the semiconductor processing adhesive tape. [Means for solving the problem]

[0007] The present invention has a base material, an adhesive layer (A) containing a gas generating agent laminated on one surface of the base material, and an adhesive layer (B) laminated on the other surface of the base material. The base material has a release-treated portion on the surface in contact with the adhesive layer (A) containing the gas generating agent. The adhesive layer (A) containing the gas generating agent is an adhesive tape for semiconductor processing having an adhesive force to a glass plate of 0.1 N / inch or more. Hereinafter, the present invention will be described in detail.

[0008] The inventors of the present invention studied an adhesive tape for semiconductor processing having a base material, an adhesive layer (A) containing a gas generating agent laminated on one surface of the base material, and an adhesive layer (B) laminated on the other surface of the base material. Furthermore, the inventors of the present invention considered forming a release-treated portion on the surface of the base material in contact with the adhesive layer (A) containing the gas generating agent and increasing the adhesive force of the adhesive layer (A) containing the gas generating agent to a glass plate to a certain value or more. The inventors of the present invention found that such an adhesive tape for semiconductor processing can be easily peeled at the interface with the semiconductor device rather than at the interface with the support after processing the semiconductor device, and thus completed the present invention.

[0009] The adhesive tape for semiconductor processing of the present invention has a base material, an adhesive layer (A) containing a gas generating agent laminated on one surface of the base material, and an adhesive layer (B) laminated on the other surface of the base material. The base material has a release-treated portion on the surface in contact with the adhesive layer (A) containing the gas generating agent. The adhesive tape for semiconductor processing of the present invention is used, for example, when processing a semiconductor device in a state where a support and the semiconductor device are fixed. In such a case, the adhesive tape for semiconductor processing of the present invention is used by bonding the adhesive layer (A) containing the gas generating agent to the support and the adhesive layer (B) to the semiconductor device.

[0010] FIG. 3 shows a cross-sectional view schematically showing an example of a state in which a support and a semiconductor device are fixed using the adhesive tape for semiconductor processing of the present invention. In Figure 3, the semiconductor processing adhesive tape 1 comprises a base material 11, an adhesive layer (A) 12 containing a gas generating agent laminated on one side of the base material 11, and an adhesive layer (B) 13 laminated on the other side of the base material 11. The base material 11 has a release treatment section 111 on the surface in contact with the adhesive layer (A) 12 containing the gas generating agent. The adhesive layer (A) 12 containing the gas generating agent is bonded to the support 2, and the adhesive layer (B) 13 is bonded to the semiconductor device 3, and the semiconductor device 3 is processed in this state.

[0011] In the semiconductor processing adhesive tape of the present invention, the adhesive layer (A) containing the gas generating agent has a lower limit of adhesive strength to a glass plate of 0.1 N / inch. If the adhesive force to the glass plate is 0.1 N / inch or more, the adhesion of the adhesive layer (A) containing the gas generating agent to the support becomes high. As a result, when gas is generated from the adhesive layer (A) containing the gas generating agent by applying a stimulus after processing the semiconductor device, the generated gas is less likely to be released at the interface between the support and the adhesive layer (A) containing the gas generating agent. On the other hand, because the substrate has the release treatment section, the adhesion between the adhesive layer (A) containing the gas generating agent and the release treatment section is reduced, so the generated gas is more likely to be released at the part of the interface between the adhesive layer (A) containing the gas generating agent and the substrate that corresponds to the release treatment section. When the generated gas is released at the part corresponding to the release treatment section, the substrate deforms into a wavy shape along the release treatment section, and as a result the adhesive layer (B) also deforms, so delamination easily occurs at the interface between the adhesive layer (B) and the semiconductor device (after processing).

[0012] The preferred lower limit of the adhesive force to the glass plate is 0.25 N / inch, a more preferred lower limit is 0.3 N / inch, and an even more preferred lower limit is 1.0 N / inch. The upper limit of the adhesive force to the glass plate is not particularly limited, but from the viewpoint of easily reusing the support such as glass, the preferred upper limit is 20 N / inch, a more preferred upper limit is 15 N / inch, and an even more preferred upper limit is 10 N / inch.

[0013] The adhesive strength of the adhesive layer (A) containing the gas generating agent to the glass plate can be measured as follows using an autograph (AG-IS, load cell (SBL-50N), manufactured by Shimadzu Corporation, or an equivalent product). A test specimen is prepared by cutting semiconductor processing adhesive tape to a width of 25 mm. The adhesive layer (A) containing the gas generating agent of the test specimen is placed opposite a glass plate (Matsunami Glass Industry Co., Ltd., large white-edged polished slide glass No. 2), and the test specimen and the glass plate are bonded together by passing a 2 kg rubber roller back and forth once at a speed of 300 mm / min over the test specimen. After that, the specimen is left to stand at 23°C for 1 hour to prepare a test sample. The test sample is heated at 100°C for 2 hours, and after heating, a tensile test is performed on the test sample in the 180° direction at a peeling speed of 300 mm / min in accordance with JIS Z0237:2009 to measure the adhesive strength of the adhesive layer (A) containing the gas generating agent to the glass plate. If the adhesive layer (A) containing the gas generating agent is a photocurable adhesive layer, the adhesive layer (A) shall be cured before heating the test sample at 100°C for 2 hours. To cure the adhesive layer (A), a high-pressure mercury UV irradiator shall be used to irradiate the adhesive layer (A) with 405 nm ultraviolet light from the glass plate, and the irradiation dose on the surface of the adhesive layer (A) shall be 3000 mJ / cm². 2 Irradiate in such a way that it results in the following.

[0014] The method for adjusting the adhesive force to the glass plate within the above range is not particularly limited, and examples include adjusting the composition, thickness, etc., of the adhesive layer (A) containing the gas generating agent, and adjusting the type, content, etc., of the gas generating agent in the adhesive layer (A) containing the gas generating agent.

[0015] Figure 4 shows a schematic cross-sectional view illustrating an example of a semiconductor device being peeled off the semiconductor processing adhesive tape of the present invention. In FIG. 4, for example, by irradiating light from the side of the support 2 or the like, gas is generated from the adhesive layer (A) 12 containing a gas generating agent. The generated gas is difficult to be released at the interface between the support 2 and the adhesive layer (A) 12 containing the gas generating agent, and is likely to be released at a site corresponding to the release treatment portion 111 at the interface between the adhesive layer (A) 12 containing the gas generating agent and the base material 11. As a result, the base material 11 is deformed into a wavy shape (wavy) along the release treatment portion 111, and as a result, the adhesive layer (B) 13 is also deformed, so that peeling easily occurs at the interface between the adhesive layer (B) 13 and the semiconductor device (after processing) 3.

[0016] The base material is not particularly limited, but it is preferably a base material that is easily deformed into a wavy shape (wavy) along the release treatment portion when the generated gas is released at a site corresponding to the release treatment portion. The tensile elastic modulus E' of the base material at 100 °C is not particularly limited, but the preferable lower limit is 1.0×10 9 Pa, and the preferable upper limit is 1.0×10 10 Pa. If the tensile elastic modulus E' at 100 °C is 1.0×10 9 Pa or more, the strength of the base material becomes higher, and the strength of the adhesive tape for semiconductor processing also becomes higher, so that the semiconductor device can be processed well. If the tensile elastic modulus E' at 100 °C is less than 1.0×10 10 Pa, when the generated gas is released at a site corresponding to the release treatment portion, the base material is more easily deformed, and peeling more easily occurs at the interface between the adhesive layer (B) and the semiconductor device (after processing). The more preferable lower limit of the tensile elastic modulus E' at 100 °C is 1.8×10 9 Pa, the more preferable upper limit is 4.5×10 9 Pa, and the further preferable lower limit is 1.6×10 9 Pa, and the further preferable upper limit is 4.0×10 9 Pa. The tensile elastic modulus E' of the base material at 100 °C can be measured by the following method. The substrate is immersed in liquid nitrogen and cooled to -50°C. Then, using a viscoelastic spectrometer (DVA-200, manufactured by IT Measurement Control Co., Ltd., or equivalent), the temperature is raised to 300°C under the conditions of constant-speed heating tensile mode, heating rate of 10°C / min, frequency of 10Hz, and static / power ratio of 1.5, and the storage modulus is measured. From the obtained storage modulus results, the storage modulus at 100°C is defined as the tensile modulus E'.

[0017] The nitrogen gas permeability coefficient of the above substrate is not particularly limited, but a preferred upper limit is 100 cm². 3 ·mm / (m 2 The above nitrogen gas permeability coefficient is 100 cm². 3 ·mm / (m 2 If the nitrogen gas permeability coefficient is below 24h·atm, when the generated gas is released to the area corresponding to the mold release treatment, the substrate will not be permeated too much by the gas and will be pushed by the pressure of the gas, making it more easily deformable, and peeling will occur more easily at the interface between the adhesive layer (B) and the semiconductor device (after treatment). A more preferable upper limit for the nitrogen gas permeability coefficient is 80cm². 3 ·mm / (m 2 (24 hours atm), and a more preferable upper limit is 20 cm. 3 ·mm / (m 2 It is a 24-hour ATM. The lower limit of the nitrogen gas permeability coefficient mentioned above is not particularly limited, but a preferred lower limit is 0.01 cm. 3 ·mm / (m 2 (24 hours atm), a more preferable lower limit is 0.02 cm 3 ·mm / (m 2 It is a 24-hour ATM. The nitrogen gas permeability coefficient of the substrate can be measured, for example, using a differential pressure method gas permeability measuring device (BT-3, manufactured by Toyo Seiki Seisakusho Co., Ltd., or an equivalent product) in accordance with JIS K7126-1:2006, under conditions of a test temperature of 23°C and a test humidity of 0%RH.

[0018] More specifically, the above-mentioned substrate is preferably a substrate that transmits or allows light to pass through. Examples include sheets made of transparent resins such as acrylic, olefin, polycarbonate, vinyl chloride, ABS, polyethylene terephthalate (PET), nylon, urethane, and polyimide, sheets having a mesh structure, and sheets with holes. The substrate may be treated with a primer to improve adhesion to the adhesive layer (A) and / or the adhesive layer (B) containing the gas generating agent.

[0019] The thickness of the above substrate is not particularly limited, but a preferred lower limit is 1 μm and a preferred upper limit is 70 μm. If the thickness is 1 μm or more, the strength of the substrate becomes higher, and the strength of the adhesive tape for semiconductor processing also becomes higher, so that semiconductor devices can be processed well. If the thickness is 70 μm or less, when the generated gas is released to the part corresponding to the mold release treatment, the substrate becomes more easily deformed, and peeling occurs more easily at the interface between the adhesive layer (B) and the semiconductor device (after processing). A more preferred lower limit for the thickness is 3 μm, a more preferred upper limit is 50 μm, an even more preferred lower limit is 6 μm, and an even more preferred upper limit is 25 μm.

[0020] In this specification, a substrate having a release treatment means that at least a portion of the substrate has a release treatment applied to it, and more specifically, that there are portions that have been treated with a release treatment and portions that have not been treated with a release treatment (non-release treatment areas). Release treatment includes all treatments that form areas with low tackiness or adhesion to the surrounding area. The shape of the release section described above is not particularly limited, and examples include a dot shape, a line shape, a zigzag shape, etc. Among these, a dot shape is preferred because it allows the substrate to deform sufficiently while suppressing overall peeling of the interface between the substrate and the adhesive layer (A) containing the gas generating agent. The dot shape described above is limited to the fact that the dots are distributed regularly or randomly over substantially the entire surface of the substrate, and the shape of each individual dot is not particularly limited. Examples include circular, triangular, square, and star shapes.

[0021] The method for forming the above-mentioned release treatment section is not particularly limited, but a method of applying a release agent to the substrate by a printing method such as gravure printing is simple and preferred. The above-mentioned release agent is not particularly limited, and for example, silicone-based, long-chain alkyl-based, or fluorine-based release agents can be used. The above-mentioned silicone-based release agents are not particularly limited and include, for example, KM722T and KF412SP manufactured by Shin-Etsu Chemical Co., Ltd. The above-mentioned long-chain alkyl-based release agents are not particularly limited and include, for example, P-Royl 1050 and P-Royl 406 manufactured by Ipposha Oil & Fat Industry Co., Ltd. The above-mentioned fluorine-based release agents are not particularly limited and include, for example, EGC-1720 manufactured by 3M and Daifree manufactured by Nisshin Kasei Co., Ltd. Furthermore, as a method for forming the release treatment area on the substrate, one method is to mask the release treatment area before applying a primer treatment to improve the adhesion of the substrate.

[0022] Figure 1 shows a schematic diagram illustrating an example of a release treatment section for a substrate in the semiconductor processing adhesive tape of the present invention. Figure 2 shows a schematic diagram illustrating another example of a release treatment section for a substrate in the semiconductor processing adhesive tape of the present invention. In both Figure 1 and Figure 2, the substrate 11 has a release treatment section 111 which is circular dot-shaped.

[0023] When the release treatment area is in the shape of a circular dot, the diameter of the release treatment area is not particularly limited, but a preferred lower limit is 0.3 mm and a preferred upper limit is 10 mm. If the diameter is within the above range, when the generated gas is released to the area corresponding to the release treatment area, the substrate becomes more easily deformed, and delamination occurs more easily at the interface between the adhesive layer (B) and the semiconductor device (after processing). Furthermore, if the diameter is 10 mm or less, it is possible to more sufficiently suppress the overall delamination of the interface between the substrate and the adhesive layer (A) containing the gas generating agent. The diameter of the release section can be determined by microscopic observation. Specifically, using a measuring microscope (Nikon MM880, manufactured by Nikon, or equivalent), the diameter can be determined by measuring any 1 cm. 2 The range is measured, and the diameter of each release-processing unit included within the measurement range is measured. The diameter of the release-processing unit can be determined by dividing the sum of the obtained diameters by the number of release-processing units and averaging them. If the shape of each dot is elliptical, it is preferable to use the value obtained by dividing the sum of the major axis and minor axis by 2 as the diameter to satisfy the above diameter range. If the shape of each dot is not circular or elliptical, it is preferable to use the diameter of the release-processing unit calculated from the area of ​​one release-processing unit as the diameter to satisfy the above diameter range.

[0024] When the above-mentioned release treatment area is in the shape of a circular dot, the density of the release treatment area is not particularly limited, but a preferred lower limit is 1 dot / cm². 2 The preferred upper limit is 12 pieces / cm 2 Therefore, if the density is within the above range, when the generated gas is released to the part corresponding to the mold release treatment, the substrate becomes more easily deformed, and delamination occurs more easily at the interface between the adhesive layer (B) and the semiconductor device (after treatment). Also, if the density is 12 particles / cm³ 2 The following conditions can more effectively suppress overall delamination of the interface between the substrate and the adhesive layer (A) containing the gas generating agent. The density of the release treatment area can be determined by counting the number of release treatment areas per unit area using a measuring microscope (Nikon MM880, manufactured by Nikon, or an equivalent) and visual inspection. 2 Within the specified range, if any part of the release mechanism is included, that release mechanism will be counted as one unit.

[0025] In particular, the above-mentioned release treatment section has a diameter of 5 mm or more and 10 mm or less, and a density of 1 particle / cm³. 2 More than 4 pieces / cm 2 Either the following conditions are met (let's call this "condition a"), or the diameter is 0.3 mm or more and less than 5 mm, and the density is 3 particles / cm³. 2 More than 12 pieces / cm 2 The following is preferable (let's call this "condition b"). That is, if the diameter of the release section is relatively large as in condition a above, then 1 cm 2 Adjust the number of pieces per unit to be relatively small, and if the diameter of the release section is relatively small as in condition b above, 1 cm 2 It is preferable to adjust the number of items per person to be relatively large.

[0026] The gas generating agent in the adhesive layer (A) containing the above-mentioned gas generating agent is not limited, but a gas generating agent that generates gas when stimulated by light irradiation or the like is preferred. Preferably, the above-mentioned gas generating agent exhibits a weight loss of 5% or less when held at 150°C for 1 hour, as measured by TG-DTA (thermogravimetric-differential thermal analysis). If the weight loss is 5% or less, the gas generating agent is stable even at high temperatures, and semiconductor devices can be processed successfully even at high temperatures. Furthermore, a weight loss of 5% or less when the gas generating agent is held at 150°C for 1 hour, as measured by TG-DTA, means that when the gas generating agent is heated from 35°C to 150°C at a heating rate of 10°C / min, the weight loss from the time it reaches 150°C to the time 1 hour later is 5% or less.

[0027] The above-mentioned gas generating agent is not particularly limited, and conventionally known gas generating agents such as azo compounds and azide compounds can be used. Furthermore, when a gas generating agent is used in which the weight loss when held at 150°C for 1 hour satisfies the above range, such as carboxylic acid compounds or salts thereof such as ketoprofen and 2-xanthonacetic acid, tetrazole compounds or salts thereof such as 1H-tetrazole, 5,5'-bistetrazole diammonium salt, and 5,5'-bistetrazoleamine monoammonium salt, or polymers having an azide group such as glycidyl azide polymer (GAP) obtained by ring-opening polymerization of 3-azidomethyl-3-methyloxetane, terephthal azide, p-tert-butylbenzazide, and 3-azidomethyl-3-methyloxetane, the semiconductor device fixed to a support using the semiconductor processing adhesive tape of the present invention can be subjected to processing including high-temperature processes of 200°C or higher, such as sputtering. These gas generating agents may be used alone or two or more may be used in combination. In particular, at least one selected from the group consisting of azo compounds and tetrazole compounds is preferred. These gas generating agents generate nitrogen gas mainly by irradiation with ultraviolet light with a wavelength of 400 nm or less.

[0028] The content of the gas generating agent is not particularly limited, but a preferred lower limit is 1 part by weight and a preferred upper limit is 200 parts by weight relative to 100 parts by weight of the base polymer constituting the adhesive layer (A) containing the gas generating agent. When the content of the gas generating agent is within the above range, both the adhesive strength and gas generation performance of the adhesive layer (A) containing the gas generating agent can be achieved. A more preferred lower limit for the content of the gas generating agent is 3 parts by weight, a more preferred upper limit is 100 parts by weight, an even more preferred lower limit is 10 parts by weight, and an even more preferred upper limit is 40 parts by weight.

[0029] The adhesive layer (A) containing the gas generating agent may further contain a photosensitizer for the purpose of amplifying stimuli such as light irradiation to the gas generating agent. By including the above-mentioned photosensitizer in the adhesive layer (A) containing the gas generating agent, gas can be released from the adhesive layer (A) containing the gas generating agent with minimal light irradiation. The above-mentioned photosensitizer is not particularly limited, but for example, a thioxanthone sensitizer is preferred.

[0030] The base polymer constituting the adhesive layer (A) containing the gas generating agent is not particularly limited, but a polymer that is tacky at room temperature is preferred, and a (meth)acrylic polymer is more preferred. The above-mentioned (meth)acrylic polymer is not particularly limited, and examples include functional group-containing (meth)acrylic polymers obtained by copolymerizing an alkyl (meth)acrylate as the main monomer, a functional group-containing monomer, and other modifying monomers that can be copolymerized with these as needed, by conventional methods. The above-mentioned alkyl (meth)acrylate is not particularly limited, and examples include alkyl (meth)acrylates in which the alkyl group has 2 to 18 carbon atoms.

[0031] It is preferable that the (meth)acrylic polymer described above does not have polymerizable reactive groups such as double bonds. If the (meth)acrylic polymer has polymerizable reactive groups, the polymerizable reactive groups react with the gas generating agent, consuming the gas generating agent and reducing the gas generating performance of the adhesive layer (A) containing the gas generating agent. The weight-average molecular weight of the above (meth)acrylic polymers is not particularly limited, but is usually around 200,000 to 2,000,000.

[0032] The adhesive layer (A) containing the above-mentioned gas generating agent may further contain, as appropriate, polyfunctional compounds commonly found in adhesive layers, such as isocyanate compounds, melamine compounds, and epoxy compounds, for the purpose of adjusting the cohesive force. The adhesive layer (A) containing the above-mentioned gas generating agent may further contain known additives such as antistatic agents, plasticizers, resins, surfactants, waxes, particulate fillers, heat stabilizers, and antioxidants.

[0033] The gel fraction of the adhesive layer (A) containing the gas generating agent is not particularly limited, but a preferred lower limit is 75% by weight. If the gel fraction is 75% by weight or more, the adhesive layer (A) containing the gas generating agent can generate gas well without foaming or the like, the substrate becomes more easily deformable, and delamination occurs more easily at the interface between the adhesive layer (B) and the semiconductor device (after processing). A more preferred lower limit for the gel fraction is 78% by weight, and an even more preferred lower limit is 80% by weight. The upper limit of the gel fraction mentioned above is not particularly limited, but a preferred upper limit is 99% by weight, and a more preferred upper limit is 98% by weight. The gel fraction refers to the amount of gel content, and can be determined, for example, by measuring the ratio of the weight of the adhesive layer (A) after immersion in ethyl acetate and subsequent drying to the weight of the adhesive layer (A) before immersion.

[0034] The adhesion force of the adhesive layer (A) containing the gas generating agent to the substrate is not particularly limited, but a preferred lower limit is 0.05 N / inch and a preferred upper limit is 40 N / inch. If the adhesion force to the substrate is within the above range, the substrate can be sufficiently deformed while suppressing overall peeling of the interface between the substrate and the adhesive layer (A) containing the gas generating agent. A more preferred lower limit for the adhesion force to the substrate is 0.1 N / inch and a more preferred upper limit is 20 N / inch.

[0035] The adhesion strength of the adhesive layer (A) containing the gas generating agent to the substrate can be measured as follows using an autograph (AG-IS, load cell (SBL-50N), manufactured by Shimadzu Corporation, or an equivalent product). A test specimen is prepared by cutting semiconductor processing adhesive tape to a width of 25 mm. The adhesive layer (A) containing the gas generating agent of the test specimen is attached to a double-sided adhesive tape for measurement (#560, manufactured by Sekisui Chemical Co., Ltd., or an equivalent product), and fixed to a copper plate via the other side of the double-sided adhesive tape for measurement. The test specimen, the double-sided adhesive tape for measurement, and the copper plate are bonded together by passing a 2 kg rubber roller back and forth once at a speed of 300 mm / min over the test specimen. After that, the specimen is left to stand at 23°C for 1 hour to prepare a test sample. The test sample is heated at 100°C for 2 hours. The adhesive layer (B) and substrate of the heated test sample are grasped, and a tensile test is performed in the 180° direction at a peeling speed of 300 mm / min in accordance with JIS Z0237:2009 to measure the adhesion force of the adhesive layer (A) containing the gas generating agent to the substrate. If the adhesive layer (A) containing the gas generating agent is a photocurable adhesive layer, the adhesive layer (A) is cured before heating the test sample at 100°C for 2 hours. To cure the adhesive layer (A), a high-pressure mercury UV irradiator is used to irradiate 405 nm ultraviolet light from the adhesive layer (B) toward the adhesive layer (A) containing the gas generating agent, and the irradiation dose on the surface of the adhesive layer (B) is 3000 mJ / cm². 2 Irradiate in such a way that it results in the following.

[0036] The thickness of the adhesive layer (A) containing the gas generating agent is not particularly limited, but a preferred lower limit is 1 μm and a preferred upper limit is 200 μm. If the thickness is within the above range, delamination occurs more easily at the interface between the adhesive layer (B) and the semiconductor device (after processing). A more preferred lower limit for the thickness is 5 μm, a more preferred upper limit is 150 μm, an even more preferred lower limit is 10 μm, and an even more preferred upper limit is 100 μm.

[0037] The adhesive layer (B) described above is not particularly limited, and conventionally known adhesive layers can be used, but it is preferable that it be a photocurable adhesive layer. The above-mentioned photocurable adhesive layer can be one of those conventionally known. Specifically, examples include a photocurable adhesive layer mainly composed of a polymerizable polymer of alkyl (meth)acrylate having a radically polymerizable unsaturated bond in the molecule (hereinafter also simply referred to as "polymerizable polymer") and a radically polymerizable polyfunctional oligomer or monomer, and optionally containing a photopolymerization initiator.

[0038] The adhesive layer (B) may contain a silicone compound. The above silicone compound is not particularly limited, but it is preferably a silicone compound having a functional group that can be crosslinked with the above polymerizable polymer. Because the above-mentioned silicone compound has excellent heat resistance, it prevents the adhesive layer (B) from burning even when placed in a high-temperature environment, and when peeling, it bleeds out to the substrate interface, making peeling easier. Furthermore, if the adhesive layer (B) is a curable adhesive layer, the above-mentioned silicone compound has functional groups that can crosslink with the polymerizable polymer, so when irradiated with light or heated, it chemically reacts with the polymerizable polymer and is incorporated into the crosslinked structure of the polymerizable polymer, thereby suppressing the adhesion and contamination of the substrate by the above-mentioned silicone compound. In addition, the incorporation of the above-mentioned silicone compound also has the effect of preventing adhesive residue from being left on the substrate.

[0039] In the above silicone compound, the functional value of the functional group that can crosslink with the polymerizable polymer is, for example, 2 to 6, preferably 2 to 4, and more preferably 2. The functional group that can crosslink with the polymerizable polymer is appropriately determined by the functional group contained in the polymerizable polymer, but for example, if the polymerizable polymer is a polymer having (meth)acrylic groups, a functional group that can crosslink with (meth)acrylic groups can be selected. The functional groups that can be crosslinked with the above-mentioned (meth)acrylic group are functional groups having an unsaturated double bond, and specifically include vinyl groups, (meth)acrylic groups, allyl groups, maleimide groups, and so on. Commercially available silicone compounds having methacrylic groups at both ends include X-22-164, X-22-164AS, X-22-164A, X-22-164B, X-22-164C, and X-22-164E from Shin-Etsu Chemical Co., Ltd. Commercially available silicone compounds having a methacrylic group at one end include X-22-174DX, X-22-2426, and X-22-2475 from Shin-Etsu Chemical Co., Ltd. Commercially available silicone compounds having an acrylic group include EBECRYL350 and EBECRYL1360 from Daicel Cytec, Inc., BYK3500 from BIC Chemie Inc., and RAD2250 from Evonik Inc. Commercially available silicone compounds having an acrylic group include AC-SQ TA-100 and AC-SQ SI-20 from Toagosei Co., Ltd. Commercially available silicone compounds containing methacrylic groups include MAC-SQ TM-100, MAC-SQ SI-20, and MAC-SQ HDM, manufactured by Toagosei Co., Ltd. These silicone compounds may be used individually or in combination of two or more.

[0040] The content of the above-mentioned silicone compound is not particularly limited, but a preferred lower limit is 1 part by weight, a preferred upper limit is 50 parts by weight, a more preferred lower limit is 10 parts by weight, and a more preferred upper limit is 40 parts by weight, relative to 100 parts by weight of the adhesive polymer constituting the adhesive layer (B). By having the content of the above-mentioned silicone compound within the above range, adhesive residue on the adherend can be prevented more effectively.

[0041] Preferably, the adhesive layer (B) has an adhesive strength of less than 0.25 N / inch to the silicon wafer after being bonded to the silicon wafer and heated at 100°C for 2 hours. This allows for easier delamination at the interface between the adhesive layer (B) and the semiconductor device (after processing). More preferably, the adhesive strength to the silicon wafer is 0.15 N / inch or less, and even more preferably 0.1 N / inch or less.

[0042] Preferably, the adhesive layer (B) has an adhesive strength of less than 0.25 N / inch to the silicon wafer after being bonded to the silicon wafer and heated at 200°C for 1 hour. This allows for easier delamination at the interface between the adhesive layer (B) and the semiconductor device (after processing). More preferably, the adhesive strength to the silicon wafer is 0.15 N / inch or less, and even more preferably 0.1 N / inch or less.

[0043] The adhesive strength of the adhesive layer (B) to the silicon wafer after bonding it to the silicon wafer and heating it at 100°C for 2 hours or 200°C for 1 hour can be determined, for example, using an autograph (AG-IS, load cell (SBL-50N), manufactured by Shimadzu Corporation, or an equivalent product) as follows. A test specimen is prepared by cutting semiconductor processing adhesive tape to a width of 25 mm, and the adhesive layer (B) of the test specimen is placed facing the silicon wafer. The test specimen and the silicon wafer are bonded together by passing a 2 kg rubber roller back and forth once at a speed of 300 mm / min over the test specimen. After that, the specimen is left to stand at 23°C for 1 hour to prepare a test sample, and the test sample is heated at 100°C for 2 hours or 200°C for 1 hour. A tensile test is performed on the heated test sample in the 180° direction at a peeling speed of 300 mm / min in accordance with JIS Z0237:2009, and the adhesive strength of the adhesive layer (B) to the silicon wafer after bonding it to the silicon wafer and heating at 100°C for 2 hours or 200°C for 1 hour is measured. If the adhesive layer (B) is a photocurable adhesive layer, the adhesive layer (B) is cured before bonding it to the silicon wafer and heating it at 100°C for 2 hours or at 200°C for 1 hour. To cure the adhesive layer (B), a high-pressure mercury UV irradiator is used to irradiate 405 nm ultraviolet light from the adhesive layer (A) containing the gas generating agent towards the adhesive layer (B), and the irradiation dose on the surface of the adhesive layer (A) containing the gas generating agent is 3000 mJ / cm². 2Irradiation is performed in such a manner. The silicon wafer used is of the P-type (Boron) conductivity, crystal orientation (100), low efficiency of 1-100 Ω·cm, TTV of 10 μm or less, WARP of 50 μm or less, mirror surface finish, and 0.2 μm or less of 30 particles (hereinafter simply referred to as "silicon wafer").

[0044] The thickness of the adhesive layer (B) is not particularly limited, but a preferred lower limit is 0.1 μm and a preferred upper limit is 600 μm. If the thickness is within the above range, delamination will occur more easily at the interface between the adhesive layer (B) and the semiconductor device (after processing). A more preferred lower limit for the thickness is 0.5 μm, a more preferred upper limit is 250 μm, an even more preferred lower limit is 1 μm, and an even more preferred upper limit is 200 μm.

[0045] In the semiconductor processing adhesive tape of the present invention, it is preferable that the ratio of the thickness of adhesive layer (B) to the thickness of adhesive layer (A) containing the gas generating agent (thickness of adhesive layer (B) / thickness of adhesive layer (A) containing the gas generating agent) is 3 or less. This allows for easier delamination at the interface between adhesive layer (B) and the semiconductor device (after processing). It is more preferable that the above ratio is 1.8 or less.

[0046] The amount of vertical displacement due to light irradiation in the semiconductor processing adhesive tape of the present invention is not particularly limited, but a preferred lower limit is 30 μm and a preferred upper limit is 200 μm. If the amount of vertical displacement is within the above range, delamination occurs more easily at the interface between the adhesive layer (B) and the semiconductor device (after processing). A more preferred lower limit for the amount of vertical displacement is 40 μm and a more preferred upper limit is 150 μm.

[0047] The vertical displacement of adhesive tape used for semiconductor processing, due to light irradiation, refers to the displacement occurring in the normal direction (thickness direction) of the adhesive layer (B). The vertical displacement can be measured as follows. An adhesive layer (A) containing a gas generating agent for semiconductor processing adhesive tape is attached to a glass plate (Matsunami Glass Industry Co., Ltd., large white-edged polished slide glass No. 2) at a speed of 10 mm / sec using a 2 kg pressure rubber roller. Next, the adhesive layer (B) and the silicon wafer are bonded together using a vacuum bonder to create a laminate having the glass plate, semiconductor processing adhesive tape, and silicon wafer in that order. The resulting laminate is placed in an oven set to 100°C with the glass side down for 2 hours to perform a heat treatment. After the heat treatment, the laminate, which has returned to room temperature, is placed from the glass plate side. 54 Ultraviolet light with a wavelength of nm is irradiated onto the adhesive layer (A) containing a gas generating agent at a dose of 12,000 mJ / cm². 2 The light is irradiated in such a manner. The interface between the silicon wafer and the adhesive layer (B) is observed using a laser microscope (LEXT OLS4100, manufactured by Olympus, or an equivalent). The interface between the silicon wafer and the adhesive layer (B) before irradiation with 254 nm ultraviolet light is used as the reference plane, and the distance to the highest point after irradiation is defined as the vertical displacement. If the adhesive layer (A) or (B) is a photocurable adhesive layer, the adhesive layer (A) or (B) should be cured before heating at 100°C for 2 hours. To cure the adhesive layer (A) or (B), a high-pressure mercury UV irradiator is used to irradiate the adhesive layer (A) containing the gas generating agent with 405 nm ultraviolet light from the glass plate side, and the irradiation dose on the surface of the adhesive layer (A) containing the gas generating agent is 3000 mJ / cm². 2 Irradiate in such a way that it results in the following.

[0048] The applications of the semiconductor processing adhesive tape of the present invention are not particularly limited, but it can be used, for example, when processing a semiconductor device while the support and the semiconductor device are fixed together. A method for manufacturing electronic components using the semiconductor processing adhesive tape of the present invention is also one of the present invention, comprising the steps of: (1) forming a laminate by attaching an adhesive layer (A) containing the gas generating agent of the semiconductor processing adhesive tape of the present invention to a support and an adhesive layer (B) to a semiconductor device; (2) processing the semiconductor device; and (3) irradiating the laminate with light from the support side to generate gas from the adhesive layer (A) containing the gas generating agent, thereby causing delamination at the interface between the adhesive layer (B) and the semiconductor device.

[0049] The method for manufacturing the electronic component of the present invention preferably includes a step of photocuring the adhesive layer (B) of the semiconductor processing adhesive tape of the present invention between the step of manufacturing the laminate (1) and the step of processing the semiconductor device (2).

[0050] The method for manufacturing the electronic component of the present invention may further include, after the step (3) of causing delamination at the interface between the adhesive layer (B) and the semiconductor device, the step of peeling off the semiconductor processing adhesive tape of the present invention from the support. [Effects of the Invention]

[0051] According to the present invention, it is possible to provide a semiconductor processing adhesive tape used, for example, when processing a semiconductor device while the support and the semiconductor device are fixed together, which peels off easily at the interface with the semiconductor device before the interface with the support after processing the semiconductor device. Furthermore, according to the present invention, it is possible to provide a method for manufacturing electronic components using the semiconductor processing adhesive tape. [Brief explanation of the drawing]

[0052] [Figure 1] This is a schematic diagram showing an example of a release treatment process for a substrate in the semiconductor processing adhesive tape of the present invention. [Figure 2] This is a schematic diagram showing another example of a release treatment device for a substrate in the semiconductor processing adhesive tape of the present invention. [Figure 3] This is a schematic cross-sectional view showing an example of a state in which a support and a semiconductor device are fixed using the semiconductor processing adhesive tape of the present invention. [Figure 4] This is a schematic cross-sectional view showing an example of a state in which a semiconductor device has been peeled off the semiconductor processing adhesive tape of the present invention. [Modes for carrying out the invention]

[0053] The embodiments of the present invention will be described in more detail below with reference to examples, but the present invention is not limited to these examples.

[0054] (Example 1) (1) Preparation of the base material A 12 μm thick transparent polyethylene terephthalate (PET) film, which had been corona-treated on both sides, was printed on one side using a gravure printing method, similar to the release treatment area shown in Figure 1, with the long-chain alkyl release agent Piroyl 1050 (manufactured by Lion Specialty Chemicals). As a result, the entire surface of one side was covered with 6 circular dots (points) with a diameter of 1 mm per cm². 2 A substrate was obtained with a uniform density.

[0055] The substrate was immersed in liquid nitrogen and cooled to -50°C. Then, using a viscoelastic spectrometer (DVA-200, manufactured by IT Measurement Control Co., Ltd.), the temperature was raised to 300°C under constant-speed heating tensile mode, heating rate of 10°C / min, frequency of 10Hz, and static / power ratio of 1.5. The storage modulus was then measured. This allowed us to determine the tensile modulus E' of the substrate at 100°C.

[0056] The nitrogen gas permeability coefficient of the substrate was measured using a differential pressure method gas permeability measuring device BT-3 (manufactured by Toyo Seiki Seisakusho Co., Ltd.) in accordance with JIS K7126-1:2006, under test conditions of a test temperature of 23°C and test humidity of 0%RH.

[0057] (2) Preparation of adhesive solution for adhesive layer (A) containing a gas generating agent The following components were dissolved in ethyl acetate and polymerized by ultraviolet irradiation to obtain a (meth)acrylic polymer with a weight-average molecular weight of 600,000. 2-Ethylhexyl acrylate 97.5 parts by weight 2-Hydroxyethyl acrylate 1.5 parts by weight • Acrylic acid 1.0 part by weight • Photopolymerization initiator 0.2 parts by weight To 100 parts by weight of the resin solids of the obtained ethyl acetate solution containing the (meth)acrylic polymer, 0.5 parts by weight of benzophenone, 2 parts by weight of polyisocyanate, 40 parts by weight of BHT-2Na (5,5'-bi-1H-tetrazole sodium salt, hereinafter referred to as "T1") as a gas generating agent, and 5 parts by weight of 2,4-diethylthioxanthone were mixed. This prepared an adhesive solution for the adhesive layer (A) containing the gas generating agent.

[0058] (3) Preparation of adhesive solution for adhesive layer (B) The following components were dissolved in ethyl acetate, and polymerization was carried out by irradiation with ultraviolet light to obtain a (meth)acrylic polymer with a weight-average molecular weight of 700,000. 2-ethylhexyl acrylate 83 parts by weight • 10 parts by weight of butyl acrylate • Acrylic acid 2 parts by weight 2-hydroxyethyl acrylate 5 parts by weight • Photopolymerization initiator 0.2 parts by weight (Irgacure 651, 50% ethyl acetate solution) • Lauryl mercaptan 0.01 parts by weight To 100 parts by weight of the resin solids in the ethyl acetate solution of the obtained (meth)acrylic polymer, 3.5 parts by weight of 2-isocyanatoethyl methacrylate was added and the mixture was carried out. To 100 parts by weight of the resin solids in the ethyl acetate solution after the reaction, 5 parts by weight of a photopolymerization initiator (Irgacure 651), 2 parts by weight of a silicone compound (BYK3500, manufactured by Bic Chemie), and 1.0 part by weight of polyisocyanate were mixed to prepare an adhesive solution for adhesive layer (B).

[0059] (4) Manufacturing of adhesive tapes for semiconductor processing An adhesive solution for the adhesive layer (A) containing a gas generating agent was applied to the surface of the substrate having a release treatment area using a doctor knife to a dry film thickness of 20 μm. The coating solution was dried by heating at 110°C for 5 minutes to evaporate the solvent. The dried adhesive layer exhibited tackiness in the dry state. A PET film with a release treatment was laminated onto the surface of the dried adhesive layer. Next, the adhesive solution for the adhesive layer (B) was applied to a PET film that had been treated with a release agent on its surface using a doctor's knife to a dry film thickness of 10 μm. The solution was then heated at 110°C for 5 minutes to evaporate the solvent and dry the coating solution. The dried adhesive layer exhibited tackiness in its dry state. Next, the side of the substrate without the adhesive layer (A) containing the gas generating agent, which had undergone corona treatment, was bonded to the side of the PET film with the adhesive layer (B) that had undergone a release treatment and was provided with the adhesive layer (B). After that, it was left to cure at 40°C for 3 days. As a result, an adhesive tape for semiconductor processing was obtained, with adhesive layers on both sides and protected by a PET film with a release treatment on its surface.

[0060] (5) Measurement of adhesive strength to glass The adhesive strength of the adhesive layer (A) containing a gas generating agent to the glass plate was measured using an Autograph (AG-IS, load cell (SBL-50N), manufactured by Shimadzu Corporation) as follows. A test specimen was prepared by cutting semiconductor processing adhesive tape to a width of 25 mm. The adhesive layer (A) containing the gas generating agent of the test specimen was placed opposite a glass plate (Matsunami Glass Industry Co., Ltd., large white-edged polished slide glass No. 2). The test specimen and the glass plate were bonded together by passing a 2 kg rubber roller back and forth once at a speed of 300 mm / min over the test specimen. After that, the test sample was prepared by letting it stand at 23°C for 1 hour, and then heated at 100°C for 2 hours. The heated test sample was subjected to a tensile test in the 180° direction at a peeling speed of 300 mm / min in accordance with JIS Z0237:2009, and the adhesive strength of the gas generating agent-containing adhesive layer (A) to the glass plate was measured. If the adhesive layer (A) is a photocurable adhesive layer, it was cured before heating at 100°C for 2 hours. The adhesive layer (A) was cured by irradiating it with 405 nm ultraviolet light from the glass plate to the adhesive layer (A) using a high-pressure mercury UV irradiator, and the irradiation dose on the surface of the adhesive layer (A) was 3000 mJ / cm². 2 The irradiation was applied in such a manner that it resulted in the following:

[0061] (6) Measurement of adhesion force to the substrate The adhesion force of the adhesive layer (A) containing the gas generating agent to the substrate was measured using an autograph (AG-IS, load cell (SBL-50N), manufactured by Shimadzu Corporation) as follows. A test specimen was prepared by cutting semiconductor processing adhesive tape to a width of 25 mm. The adhesive layer (A) containing the gas generating agent of the test specimen was attached to a double-sided adhesive tape for measurement (#560, manufactured by Sekisui Chemical Co., Ltd.), and fixed to a copper plate via the other side of the double-sided adhesive tape for measurement. The test specimen, the double-sided adhesive tape for measurement, and the copper plate were bonded together by passing a 2 kg rubber roller back and forth once at a speed of 300 mm / min over the test specimen. After that, the specimen was left to stand at 23°C for 1 hour to prepare a test sample. The test sample after standing was heated at 100°C for 2 hours. The adhesive layer (B) and substrate of the heated test sample were grasped, and a tensile test was performed in the 180° direction at a peeling speed of 300 mm / min in accordance with JIS Z0237:2009 to measure the adhesion force of the adhesive layer (A) containing the gas generating agent to the substrate.

[0062] (7) Measurement of adhesion force to silicon wafer The adhesive strength of the adhesive layer (B) to the silicon wafer after bonding it to the silicon wafer and heating it at 100°C for 2 hours was determined using an autograph (AG-IS, load cell (SBL-50N), manufactured by Shimadzu Corporation) as follows. A test specimen was prepared by cutting semiconductor processing adhesive tape to a width of 25 mm, and the adhesive layer (B) of the test specimen was placed facing the silicon wafer. The test specimen and the silicon wafer were bonded together by passing a 2 kg rubber roller back and forth at a speed of 300 mm / min over the test specimen. After that, the specimen was left to stand at 23°C for 1 hour to prepare a test sample, and the test sample after standing was heated at 100°C for 2 hours. The adhesive force to the silicon wafer was measured by performing a tensile test on the heated test sample in the 180° direction at a peeling speed of 300 mm / min in accordance with JIS Z0237:2009. The adhesive strength of the adhesive layer (B) to the silicon wafer after bonding it to the silicon wafer and heating it at 200°C for 1 hour was measured in the same manner as above, except that the heating conditions were 200°C and 1 hour. Furthermore, if the adhesive layer (B) is a photocurable adhesive layer, the adhesive layer (B) was cured before bonding it to the silicon wafer and heating it. For curing the adhesive layer (B), a high-pressure mercury UV irradiator was used to irradiate 405 nm ultraviolet light from the adhesive layer (A) containing the gas generating agent towards the adhesive layer (B), and the irradiation dose on the surface of the adhesive layer (A) containing the gas generating agent was 3000 mJ / cm². 2 The irradiation was applied in such a manner that it resulted in the following:

[0063] (8) Measurement of vertical displacement due to light irradiation The vertical displacement of adhesive tape used for semiconductor processing due to light irradiation was measured as follows. An adhesive layer (A) containing a gas generating agent from semiconductor processing adhesive tape was attached to a glass plate (Matsunami Glass Industry Co., Ltd., large white-edged polished slide glass No. 2) at a speed of 10 mm / sec using a 2 kg pressure rubber roller. Next, the adhesive layer (B) of the semiconductor processing adhesive tape and the silicon wafer were bonded together using a vacuum bonder to create a laminate having the glass plate, semiconductor processing adhesive tape, and silicon wafer in that order. The obtained laminate was placed in an oven set to 100°C with the glass side down for 2 hours to perform a heat treatment. After the heat treatment, the laminate returned to room temperature, and from the glass plate side, 2 54Ultraviolet light with a wavelength of nm is irradiated onto the adhesive layer (A) containing a gas generating agent at a dose of 12,000 mJ / cm². 2 The surface was irradiated in such a manner. The interface between the silicon wafer and the adhesive layer (B) was observed using a laser microscope (LEXT OLS4100, Olympus). The interface between the silicon wafer and the adhesive layer (B) before irradiation with 254 nm ultraviolet light was used as the reference plane, and the distance to the highest point after irradiation was defined as the vertical displacement. If the adhesive layer (A) or (B) is a photocurable adhesive layer, the adhesive layer (A) or (B) was cured before heating at 100°C for 2 hours. For curing the adhesive layer (A) or (B), a high-pressure mercury UV irradiator was used to irradiate the adhesive layer (A) containing the gas generating agent from the glass plate side with 405 nm ultraviolet light, and the irradiation dose on the surface of the adhesive layer (A) containing the gas generating agent was 3000 mJ / cm². 2 The irradiation was applied in such a manner that it resulted in the following:

[0064] (Examples 2-12, Comparative Examples 1-4) A semiconductor processing adhesive tape was prepared in the same manner as in Example 1, except that the thickness of the adhesive layer (A), the type and amount of gas generating agent, the silicone compound content of the adhesive layer (A), the presence and thickness of the substrate, the presence or absence of primer treatment, the presence or absence of a release treatment, its diameter and density, the thickness of the adhesive layer (B), and the silicone compound content of the adhesive layer (B) were changed as shown in Tables 1 and 2. The following gas generating agents were used. ADCA: Azodicarbonamide, manufactured by Fujifilm & Wako Pure Chemical Industries, Ltd. T2: 5,5'-B-1H-tetrazol piperazine salt (BHT-PIPE)

[0065] For Examples 2-7, 9-10, 12, and Comparative Examples 1 and 4, Polyment NK350 (manufactured by Nippon Shokubai Co., Ltd.) was applied to both sides of the substrate as a primer treatment. For Example 5, a 25 μm thick polyethylene naphthalate (PEN) film was used as the substrate instead of a 12 μm thick PET film.

[0066] <Rating> The semiconductor processing adhesive tapes obtained in the examples and comparative examples were evaluated as follows. The results are shown in Tables 1 and 2.

[0067] (1) Adhesion to the support (glass plate) The PET film protecting the adhesive layer (B) of the adhesive tape for semiconductor processing was peeled off and attached to a silicon wafer with a diameter of 20 cm and a thickness of approximately 750 μm on which a circuit had been formed. Next, the PET film protecting the adhesive layer (A) containing the gas generating agent was peeled off, and a glass plate with a diameter of 20.4 cm was attached to the adhesive layer (A) containing the gas generating agent using a vacuum press to prepare a sample. After placing the sample with the silicon wafer side facing down, a high-pressure mercury lamp is used to irradiate the glass plate surface with ultraviolet light at a wavelength of 365 nm at an intensity of 40 mW / cm². 2 The illumination was adjusted to achieve the desired result. ○: No delamination occurred at the interface between the glass plate and the adhesive layer (A) containing the gas generating agent after UV irradiation. ×: After UV irradiation, delamination occurred at the interface between the glass plate and the adhesive layer (A) containing a gas generating agent.

[0068] (2) Deformation of the base material Samples were prepared in the same manner as described in (1) above for adhesion to the support (glass plate), and then irradiated with ultraviolet light. Note that the adhesive tape for semiconductor processing obtained in Comparative Example 2 did not have a substrate, so it was evaluated as "-". ○: After UV irradiation, the substrate deformed into a wavy shape along the release treatment area. △: After UV irradiation, the substrate deformed into a convex shape. ×: The substrate did not deform after UV irradiation.

[0069] (3) Easy peeling from semiconductor wafers A laminate was obtained by attaching the adhesive layer (B) side of a semiconductor processing adhesive tape cut into a circle with a diameter of 20 cm to a silicon wafer with a diameter of 20 cm and a thickness of approximately 750 μm, and attaching the adhesive layer (A) side to a glass plate with a diameter of 20 cm and a thickness of 1 mm. Using a high-pressure mercury ultraviolet irradiation device, 405nm ultraviolet light was emitted from the glass plate side, with an accumulated irradiation dose of 3000 mJ / cm². 2 The adhesive layers (A) and (B) were cured by irradiating them in such a manner. After that, heat treatment was performed at 100°C for 2 hours, and after cooling, the laminate was placed with the glass plate side facing downwards. Subsequently, light with a wavelength of 254 nm was irradiated with an integrated illuminance of 12000 mJ / cm². 2 To achieve this, a gas was generated from the adhesive layer (A) by irradiating it from the glass plate side. After the gas was generated, a suction cup with a hook was attached to the edge of the silicon wafer, and the semiconductor processing adhesive tape and silicon wafer were separated by hooking a digital spring scale onto the hook and lifting it. The maximum value indicated by the spring scale at this time was measured as the peeling force, and the ease of peeling the adhesive layer (B) from the silicon wafer was evaluated according to the following criteria (spring scale). ◎: Peeling force less than 0.2 kgf ○: Peeling force of 0.2 kgf or more, and less than 0.5 kgf. △: Peeling force of 0.5 kgf or more, but less than 1 kgf. ×: The silicon wafer and the adhesive layer (B) did not separate.

[0070] [Table 1]

[0071] [Table 2] [Industrial applicability]

[0072] According to the present invention, it is possible to provide a semiconductor processing adhesive tape used, for example, when processing a semiconductor device while the support and the semiconductor device are fixed together, which peels off easily at the interface with the semiconductor device before the interface with the support after processing the semiconductor device. Furthermore, according to the present invention, it is possible to provide a method for manufacturing electronic components using the semiconductor processing adhesive tape. [Explanation of symbols]

[0073] 1. Adhesive tape for semiconductor processing 2 Support 3. Semiconductor devices 11 Base material 12. Adhesive layer (A) containing a gas generating agent 13 Adhesive layer (B) 111 Release Processing Unit

Claims

1. The material comprises a base material, an adhesive layer (A) containing a gas generating agent laminated on one side of the base material, and an adhesive layer (B) laminated on the other side of the base material. The substrate has a release treatment area on the surface that is in contact with the adhesive layer (A) containing the gas generating agent, The mold release treatment includes a silicone-based mold release agent, a long-chain alkyl-based mold release agent, or a fluorine-based mold release agent. The substrate has a nitrogen gas permeability coefficient of 100 cm³·mm / (m²·24h·atm) or less. The adhesive layer (A) containing the gas generating agent has an adhesive force of 0.1 N / inch or more to the glass plate, an adhesion force of 0.05 N / inch or more and 40 N / inch or less to the substrate, and contains a (meth)acrylic polymer as the base polymer. A semiconductor processing adhesive tape characterized by the following features.

2. The adhesive tape for semiconductor processing according to claim 1, characterized in that the gas generating agent is at least one selected from the group consisting of azo compounds and tetrazole compounds.

3. The semiconductor processing adhesive tape according to claim 1 or 2, characterized in that the amount of vertical displacement due to light irradiation is 30 μm or more and 200 μm or less.

4. The semiconductor processing adhesive tape according to claim 1, 2, or 3, characterized in that the ratio of the thickness of the adhesive layer (B) to the thickness of the adhesive layer (A) containing the gas generating agent (thickness of the adhesive layer (B) / thickness of the adhesive layer (A) containing the gas generating agent) is 3 or less.

5. The adhesive layer (A) containing the gas generating agent has a thickness of 1 μm or more and 200 μm or less, characterized in that it is an adhesive tape for semiconductor processing according to claim 1, 2, 3, or 4.

6. The adhesive tape for semiconductor processing according to claim 1, 2, 3, 4, or 5, characterized in that the adhesive layer (B) has a thickness of 1 μm or more and 600 μm or less.

7. The adhesive tape for semiconductor processing according to claim 1, 2, 3, 4, 5, or 6, characterized in that the adhesive layer (B) has an adhesive strength to the silicon wafer of less than 0.25 N / inch after being bonded to the silicon wafer and heated at 200°C for 1 hour.

8. The adhesive tape for semiconductor processing according to claim 1, 2, 3, 4, 5, 6, or 7, characterized in that the adhesive layer (B) is a photocurable adhesive layer.

9. The aforementioned substrate has a tensile modulus E' of 1.0 × 10 at 100°C. ９ Pa or more, 1.0×10 １０ The semiconductor processing adhesive tape according to claim 1, 2, 3, 4, 5, 6, 7, or 8, characterized in that it is Pa or less.

10. The semiconductor processing adhesive tape according to claim 1, 2, 3, 4, 5, 6, 7, 8, or 9, characterized in that the substrate has a thickness of 1 μm or more and 70 μm or less.

11. The aforementioned release treatment unit has a circular dot shape, with a diameter of 0.3 mm or more and 10 mm or less, and a density of 1 dot / cm². ２ Above, 12 pieces / cm ２ The semiconductor processing adhesive tape according to claim 1, 2, 3, 4, 5, 6, 7, 8, 9, or 10, characterized in that it is as follows:

12. The diameter of the aforementioned release section is 5 mm or more and 10 mm or less, and the density is 1 particle / cm³. ２ Above, 4 pieces / cm ２ The semiconductor processing adhesive tape according to claim 11, characterized in that it is as follows.

13. The mold release section has a diameter of 0.3 mm or more and less than 5 mm, and a density of 3 particles / cm³. ２ Above, 12 pieces / cm ２ The semiconductor processing adhesive tape according to claim 11, characterized in that it is as follows.

14. A method for manufacturing electronic components using the semiconductor processing adhesive tape described in claim 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, or 13, Step (1) involves attaching the adhesive layer (A) containing the gas generating agent of the semiconductor processing adhesive tape to a support, and the adhesive layer (B) to a semiconductor device to produce a laminate, The process (2) for processing the semiconductor device, The process includes a step (3) of irradiating the laminate with light from the support side to generate gas from the adhesive layer (A) containing the gas generating agent, thereby causing delamination at the interface between the adhesive layer (B) and the semiconductor device. A method for manufacturing electronic components, characterized by the following:

15. The method for manufacturing an electronic component according to claim 14, further comprising a step of photocuring the adhesive layer (B) of the semiconductor processing adhesive tape between the step of manufacturing the laminate (1) and the step of processing the semiconductor device (2).

16. A method for manufacturing an electronic component according to claim 14 or 15, characterized in that, after the step (3) of causing delamination at the interface between the adhesive layer (B) and the semiconductor device, the method further comprises the step of peeling the semiconductor processing adhesive tape from the support.

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