Display device and method for manufacturing the same

Abstract

One embodiment of the present invention discloses a display device including a substrate, an organic insulating layer disposed on the substrate and having an opening, a first electrode on the organic insulating layer, an auxiliary electrode disposed on the organic insulating layer, a first portion of which overlaps the opening of the organic insulating layer, a bank layer in which a first bank opening overlapping with the first electrode and a second bank opening overlapping with a first portion of the auxiliary electrode are defined, an intermediate layer located on the first electrode and the auxiliary electrode and including a hole exposing a portion of the auxiliary electrode, and a second electrode disposed on the intermediate layer so as to overlap with the first electrode and the auxiliary electrode and in contact with the auxiliary electrode via the hole in the intermediate layer, wherein in a planar view, the hole in the intermediate layer is located within the second bank opening and only partially overlaps with the opening in the organic insulating layer.

Description

Technical Field

[0001] The present invention relates to a display device and a method for manufacturing the same.

Background Art

[0002] Due to the rapid development of the display field that visually represents various electrical signal information, various display devices having excellent characteristics such as thinning, weight reduction, and energy saving have been introduced.

[0003] The display device may include a liquid crystal display device that does not emit light spontaneously and uses the light of a backlight, or a self-emitting display device including a self-emitting display element. The self-emitting display device may include a display element including a light-emitting layer.

Summary of the Invention

Problems to be Solved by the Invention

[0004] The problem to be solved by the present invention relates to a display device and a method for manufacturing the same, and more specifically, to provide a structure and method related to a light-emitting display device.

Means for Solving the Problems

[0005] One embodiment of the present invention includes a substrate; an organic insulating layer disposed on the substrate and having an opening; a first electrode on the organic insulating layer; an auxiliary electrode disposed on the organic insulating layer, but a first portion thereof overlapping the opening of the organic insulating layer; a bank layer in which a first bank opening overlapping the first electrode and a second bank opening overlapping the first portion of the auxiliary electrode are defined; an intermediate layer located on the first electrode and the auxiliary electrode and including a hole exposing a part of the auxiliary electrode; and a second electrode disposed on the intermediate layer so as to overlap the first electrode and the auxiliary electrode and contacting the auxiliary electrode through the hole of the intermediate layer. In a plan view, the hole of the intermediate layer only partially overlaps the opening of the organic insulating layer and is located within the second bank opening, and a display device is disclosed. <00​​In a plan view, a portion of the hole in the intermediate layer may be located at the opening in the organic insulating layer, and the remaining portion of the hole in the intermediate layer may be located between the contour line of the opening in the organic insulating layer and the contour line of the second bank opening.

[0007] The organic insulating layer includes an inclined surface adjacent to the opening, and a portion of the contact area between the second electrode and the auxiliary electrode may be located on the inclined surface of the organic insulating layer.

[0008] The center of the hole in the intermediate layer may be located within the opening in the organic insulating layer in a plan view.

[0009] The center of the hole in the intermediate layer may be located about 1 μm or more away from the inner edge of the organic insulating layer that defines the opening in the organic insulating layer.

[0010] The substrate includes a common voltage line arranged on the substrate and extending in one direction, and an auxiliary common voltage line that overlaps with the common voltage line and is electrically connected to the common voltage line through a contact hole defined in at least one insulating layer interposed between the common voltage line and the auxiliary common voltage line and the common voltage line may overlap with the opening in the organic insulating layer.

[0011] The system may further include an inorganic insulating layer that is in direct contact with the upper surface of the auxiliary common voltage line.

[0012] The auxiliary electrode is superimposed on the opening of the organic insulating layer and includes a first portion having a width wider than the opening, and a second portion formed integrally with the first portion and having a narrower width than the first portion, wherein the second portion of the auxiliary electrode can be electrically connected to the auxiliary common voltage line through a contact hole penetrating the organic insulating layer and the inorganic insulating layer.

[0013] The intermediate layer includes a light-emitting layer, and the holes in the intermediate layer may include holes that penetrate the light-emitting layer.

[0014] Another embodiment of the present invention provides a method for manufacturing a display device, comprising the steps of: forming an organic insulating layer having an opening on a substrate; forming a first electrode on the organic insulating layer; forming an auxiliary electrode on the organic insulating layer, the first portion of which overlaps the opening in the organic insulating layer; forming a bank layer having a first bank opening overlapping the first electrode and a second bank opening overlapping the first portion of the auxiliary electrode defined; forming an intermediate layer so as to be located above the first electrode and the auxiliary electrode; forming a hole in the intermediate layer to expose a part of the auxiliary electrode; and forming a second electrode on the intermediate layer so as to be in contact with the auxiliary electrode through the hole in the intermediate layer; wherein, in plan view, the hole in the intermediate layer is located within the second bank opening and only partially overlaps the opening in the organic insulating layer.

[0015] The step of forming the hole includes irradiating the intermediate layer with a laser beam, wherein a portion of the laser beam may be located between the outline of the opening in the organic insulating layer and the outline of the second bank opening in a plan view.

[0016] The center of the laser beam may be located within the second bank aperture.

[0017] The center of the hole in the intermediate layer may be located about 1 μm or more away from the inner edge of the organic insulating layer that defines the opening in the organic insulating layer.

[0018] The organic insulating layer includes an inclined surface adjacent to the opening, and in the process of forming the second electrode, a portion of the contact area between the second electrode and the auxiliary electrode may be located on the inclined surface of the organic insulating layer.

[0019] The auxiliary electrode may include a first portion superimposed on the opening of the organic insulating layer and having a width wider than the opening, and a second portion formed integrally with the first portion but having a narrower width than the first portion.

[0020] A step of forming a common voltage line disposed on the substrate and extending in one direction, and a step of forming an auxiliary common voltage line that overlaps with the common voltage line and is electrically connected to the common voltage line through a contact hole defined (defined) in at least one insulating layer interposed between the common voltage line. The auxiliary common voltage line and the common voltage line may overlap with the opening of the organic insulating layer.

[0021] The method may further include a step of forming an inorganic insulating layer on the auxiliary common voltage line.

[0022] The method may further include a step of forming a contact hole penetrating the organic insulating layer and the inorganic insulating layer so that the second portion of the auxiliary electrode is electrically connected to the auxiliary common voltage line.

[0023] In plan view, a part of the outline of the opening of the organic insulating layer may overlap with the hole of the intermediate layer.

[0024] The step of forming the intermediate layer includes a step of forming a light-emitting layer so as to overlap with the first electrode and the auxiliary electrode, and the step of forming the hole may include a step of forming a hole penetrating the light-emitting layer.

[0025] Other aspects, features, and advantages other than those described above will become apparent from the following drawings, claims, and detailed description of the invention.

Effects of the Invention

[0026] According to an embodiment of the present invention, when forming a hole in the intermediate layer, it is possible to reduce process constraints due to the opening size of the insulating layer and ensure the quality of the contact region between the auxiliary electrode and the second electrode on the auxiliary electrode. The effects described above are exemplary and do not limit the scope of the present invention by such effects.

Brief Description of the Drawings

[0027] [Figure 1]It is a perspective view schematically showing a display device according to an embodiment of the present invention. [Figure 2] It is a cross-sectional view schematically showing each pixel of a display device according to an embodiment of the present invention. [Figure 3] It is a drawing showing each optical part of the color conversion-transmission layer of FIG. 2. [Figure 4] It is an equivalent circuit diagram showing a light-emitting diode included in a display device according to an embodiment of the present invention and a pixel circuit electrically connected to the light-emitting diode. [Figure 5] It is a plan view showing a light-emitting diode of a display device according to an embodiment of the present invention and wirings arranged around it. [Figure 6] It is a cross-sectional view of the display device taken along line A-A' of FIG. 5. [Figure 7] It is a plan view showing the structure of a common voltage line and an auxiliary electrode of a display device according to an embodiment of the present invention. [Figure 8] It is a cross-sectional view of the display device taken along line B-B' of FIG. 7. [Figure 9] It is a cross-sectional view of the display device taken along line C-C' of FIG. 7. [Figure 10] It is a cross-sectional view of a display device according to the manufacturing process of a display device according to an embodiment of the present invention. [Figure 11] It is a cross-sectional view of a display device according to the manufacturing process of a display device according to an embodiment of the present invention. [Figure 12] It is a cross-sectional view of a display device according to the manufacturing process of a display device according to an embodiment of the present invention. [Figure 13] It is a cross-sectional view of a display device according to the manufacturing process of a display device according to an embodiment of the present invention. [Figure 14] It is a cross-sectional view of a display device according to the manufacturing process of a display device according to an embodiment of the present invention.

Mode for Carrying Out the Invention

[0028] The present invention can be modified in various ways and has many different embodiments. Specific embodiments are illustrated in the drawings and described in detail in the detailed description. The effects and features of the present invention, and how they are achieved, will become clear when viewed in detail with the drawings and the embodiments described later. However, the present invention is not limited to the embodiments described later and can be embodied in a variety of forms.

[0029] Embodiments of the present invention will be described in detail below with reference to the attached drawings. When describing with reference to the drawings, identical or corresponding components will be denoted by the same reference numerals, and redundant explanations thereof will be omitted.

[0030] In the following embodiments, terms such as "first," "second," etc., are used not in a restrictive sense, but for the purpose of distinguishing one component from another.

[0031] In the following embodiments, a singular expression includes a plural expression unless the context clearly indicates otherwise.

[0032] In the following embodiments, terms such as “includes” or “having” mean that the features or components described in the specification are present, and do not preclude the possibility of adding one or more other features or components.

[0033] In the following embodiments, when a part such as a membrane, region, or component is located on or above another part, this includes not only cases where it is directly above the other part, but also cases where another membrane, region, component, etc. is interposed between them.

[0034] In drawings, the size of components may be exaggerated or reduced for illustrative purposes. For example, the size and thickness of each component shown in the drawings are arbitrarily shown for illustrative purposes, and the present invention is not necessarily limited to what is shown.

[0035] Where a particular embodiment can be manifested in a different way, a specific sequence of steps may be performed in a different order than that described. For example, two steps described consecutively may be performed substantially simultaneously, or in the reverse order of the description.

[0036] In the following embodiments, when we say that membranes, regions, components, etc. are connected, this includes not only cases where membranes, regions, and components are directly connected, but also cases where other membranes, regions, and components are interposed between them to indirectly connect them. For example, in this specification, when we say that membranes, regions, components, etc. are electrically connected, this includes not only cases where membranes, regions, and components are directly electrically connected, but also cases where other membranes, regions, and components are interposed between them to indirectly connect them electrically.

[0037] Figure 1 is a schematic perspective view showing a display device according to one embodiment of the present invention.

[0038] Referring to Figure 1, the display device DV may include a display area DA and a non-display area NDA outside the display area DA. The display device DV can provide an image to the display area DA via multiple pixel arrays arranged two-dimensionally on the xy plane. The multiple pixels include a first pixel, a second pixel, and a third pixel, and for the sake of explanation, we will assume below that the first pixel is a red pixel Pr, the second pixel is a green pixel Pg, and the third pixel is a blue pixel Pb.

[0039] The red pixels Pr, green pixels Pg, and blue pixels Pb are regions that emit red, green, and blue light, respectively, and the display device DV can provide an image using the light emitted from the pixels.

[0040] The non-display area (NDA) is an area that does not provide an image and may surround the display area (DA) as a whole. Drivers or main voltage lines for providing electrical signals or power to pixel circuits may be located within the NDA. The NDA may also include pads, which are areas to which electronic components or printed circuit boards are electrically connected.

[0041] The display area DA can have polygons, including rectangles, as illustrated in Figure 1. For example, the display area DA may be a rectangle where the width is longer than the height, a rectangle where the width is shorter than the height, or a square. Alternatively, the display area DA may have a variety of shapes, such as an ellipse or a circle.

[0042] Figure 2 is a schematic cross-sectional view showing each pixel of a display device according to one embodiment of the present invention.

[0043] Referring to Figure 2, the display device DV may include a circuit layer 200 on the substrate 100. The circuit layer 200 includes first to third pixel circuits PC1, PC2, and PC3, and each of the first to third pixel circuits PC1, PC2, and PC3 may be electrically connected to the first to third light-emitting diodes LED1, LED2, and LED3 of the light-emitting diode layer 303.

[0044] The first to third light-emitting diodes LED1, LED2, and LED3 may include organic light-emitting diodes containing organic materials. In other embodiments, the first to third light-emitting diodes LED1, LED2, and LED3 are also inorganic light-emitting diodes containing inorganic materials. Inorganic light-emitting diodes may include PN junction diodes containing an inorganic semiconductor substrate material. When a forward voltage is applied to a PN junction diode, holes and electrons are injected, and the energy generated by the recombination of these holes and electrons is converted into light energy, allowing light of a predetermined hue to be emitted. The inorganic light-emitting diodes described above may have a width of several to several hundred micrometers or several to several hundred nanometers. In some embodiments, the light-emitting diode LED is also a light-emitting diode containing quantum points (e.g., the first to third light-emitting diodes LED1, LED2, and LED3). As described above, the light-emitting layer of the light-emitting diode LED (e.g., the first to third light-emitting diodes LED1, LED2, and LED3) may contain organic materials, inorganic materials, quantum points, organic materials and quantum points, or inorganic materials and quantum points.

[0045] The first to third light-emitting diodes LED1, LED2, and LED3 can emit light of the same color. For example, light emitted from the first to third light-emitting diodes LED1, LED2, and LED3 (e.g., blue light Lb) can pass through the sealing layer 400 on the light-emitting diode layer 303 and then through the color conversion-transmission layer 500.

[0046] The color conversion-transmission layer 500 may include an optical section that converts or transmits the color of light (e.g., blue light Lb) emitted from the light-emitting diode layer 303 without converting its color. For example, the color conversion-transmission layer 500 may include a color conversion section that converts light (e.g., blue light Lb) emitted from the light-emitting diode layer 303 into light of a different color, and a transmission section that transmits the light (e.g., blue light Lb) emitted to the light-emitting diode layer 303 without converting its color. The color conversion-transmission layer 500 may include a first color conversion section 510 corresponding to a red pixel Pr, a second color conversion section 520 corresponding to a green pixel Pg, and a transmission section 530 corresponding to a blue pixel Pb. The first color conversion section 510 can convert blue light Lb to red light Lr, and the second color conversion section 520 can convert blue light Lb to green light Lg. The transmission section 530 can transmit blue light Lb without converting it.

[0047] The color layer 600 may be placed on the color conversion-transmission layer 500. The color layer 600 may include first to third color filters 610, 620, and 630 of different colors. For example, the first color filter 610 is a red color filter, the second color filter 620 is a green color filter, and the third color filter 630 is a blue color filter.

[0048] The color-converted and transmitted light in the color-transmitted layer 500 can have their color purity improved as they pass through the first to third color filters 610, 620, and 630, respectively. In addition, the color layer 600 can prevent or minimize the reflection of external light (for example, light incident on the display device DV from outside the DV) that is visible to the user.

[0049] The display device DV may include a translucent substrate layer 700 on the color layer 600. The translucent substrate layer 700 may include glass or a translucent organic material. For example, the translucent substrate layer 700 may include a translucent organic material such as an acrylic resin.

[0050] In one embodiment, the translucent substrate layer 700 is a type of substrate, and after a color layer 600 and a color conversion-transmitting layer 500 are formed on the translucent substrate layer 700, the color conversion-transmitting layer 500 may be positioned to face the sealing layer 400.

[0051] In other embodiments, a color conversion-transmitting layer 500 and a color layer 600 are sequentially formed on the sealing layer 400, after which a light-transmitting substrate layer 700 may be directly coated and cured on the color layer 600. In some embodiments, other optical films, such as an AR (anti-reflection) film, may be placed on the light-transmitting substrate layer 700.

[0052] Display devices (DV) having the aforementioned structure may include televisions, billboards, movie theater screens, monitors, tablet PCs, and notebook computers.

[0053] Figure 3 shows the optical components of the color conversion-transmission layer in Figure 2.

[0054] Referring to Figure 3, the first color conversion unit 510 can convert incident blue light Lb into red light Lr. As shown in Figure 3, the first color conversion unit 510 may include a first photosensitive polymer 1151, a first quantum point 1152 and a first scattering particle 1153 dispersed in the first photosensitive polymer 1151.

[0055] The first quantum point 1152 can be excited by blue light Lb and emit isotropically red light Lr having a wavelength longer than the wavelength of blue light Lb. The first photosensitive polymer 1151 can be a light-transmitting organic material. The first scattering particle 1153 can increase the color conversion efficiency by scattering blue light Lb that has not been absorbed by the first quantum point 1152 and further exciting more first quantum points 1152. The first scattering particle 1153 can be, for example, titanium dioxide (TiO2) or metal particles. The first quantum point 1152 can be selected from group II-VI compounds, group III-V compounds, group IV-VI compounds, group IV elements, group IV compounds, and combinations thereof.

[0056] The second color conversion unit 520 can convert incident blue light Lb into green light Lg. As shown in Figure 3, the second color conversion unit 520 may include a second photosensitive polymer 1161 and a second quantum point 1162 and a second scattering particle 1163 dispersed in the second photosensitive polymer 1161.

[0057] The second quantum point 1162 can be excited by blue light Lb and emit isotropically green light Lg having a wavelength longer than the wavelength of blue light. The second photosensitive polymer 1161 may be a light-transmitting organic material.

[0058] The second scattering particle 1163 can increase the color conversion efficiency by scattering blue light Lb that has not been absorbed by the second quantum point 1162, thereby exciting even more second quantum points 1162. The second scattering particle 1163 can be, for example, titanium dioxide (TiO2) or metal particles. The second quantum point 1162 can be selected from group II-VI compounds, group III-V compounds, group IV-VI compounds, group IV elements, group IV compounds, and combinations thereof.

[0059] In some embodiments, the first quantum point 1152 and the second quantum point 1162 may be made of the same material. In that case, the size of the first quantum point 1152 may be larger than the size of the second quantum point 1162.

[0060] The transparent portion 530 does not convert the blue light Lb incident on the transparent portion 530 and can transmit the blue light Lb. As shown in Figure 3, the transparent portion 530 may contain a third photosensitive polymer 1171 in which the third scattering particles 1173 are dispersed. The third photosensitive polymer 1171 may be an organic substance having light transmittance, such as a silicone resin or an epoxy resin, and may be the same substance as the first and second photosensitive polymers 1151 and 1161. The third scattering particles 1173 scatter and emit the blue light Lb and may be the same substance as the first and second scattering particles 1153 and 1163.

[0061] Figure 4 is an equivalent circuit diagram showing a light-emitting diode and a pixel circuit electrically connected to the light-emitting diode included in a display device according to one embodiment of the present invention.

[0062] Referring to Figure 4, the first electrode (e.g., anode) of a light-emitting diode, such as an LED, may be connected to a pixel circuit PC, and the second electrode (e.g., cathode) of the LED may be connected to a common voltage line VSL that provides a common power supply voltage ELVSS. The LED may emit light with a brightness corresponding to the amount of current supplied from the pixel circuit PC.

[0063] The light-emitting diode LED in Figure 4 corresponds to the first to third light-emitting diodes LED1, LED2, and LED3 shown in Figure 2, respectively, and the pixel circuit PC in Figure 4 may correspond to the first to third pixel circuits PC1, PC2, and PC3 shown in Figure 2, respectively.

[0064] The pixel circuit PC can control the amount of current flowing from the drive power supply voltage ELVDD through the light-emitting diode LED to the common power supply voltage ELVSS in response to the data signal. The pixel circuit PC may include a drive transistor M1, a switching transistor M2, a sensing transistor M3, and a storage capacitor Cst.

[0065] Each of the drive transistor M1, switching transistor M2, and sensing transistor M3 can be an oxide semiconductor thin-film transistor containing a semiconductor layer made of an oxide semiconductor, or a silicon semiconductor thin-film transistor containing a semiconductor layer made of polysilicon. Depending on the type of transistor, the first electrode can be one of the source electrode and the drain electrode, and the second electrode can be the other of the source electrode and the drain electrode.

[0066] The first electrode of the drive transistor M1 is connected to the drive voltage line VDL that supplies the drive power supply voltage ELVDD, and the second electrode may be connected to the first electrode of the light-emitting diode LED. The gate electrode of the drive transistor M1 may be connected to the first node N1. The drive transistor M1 can control the amount of current flowing from the drive power supply voltage ELVDD to the light-emitting diode LED in accordance with the voltage at the first node N1.

[0067] Switching transistor M2 can be a switching transistor. The first electrode of switching transistor M2 may be connected to data line DL, and the second electrode may be connected to the first node N1. The gate electrode of switching transistor M2 may be connected to scan line SL. When a scan signal is supplied to scan line SL, switching transistor M2 may be turned on and electrically connect data line DL and the first node N1.

[0068] The sensing transistor M3 is also an initialization transistor and / or a sensing transistor. The first electrode of the sensing transistor M3 is connected to the second node N2, and the second electrode may be connected to the sensing line SEL. The gate electrode of the sensing transistor M3 may be connected to the control line CL.

[0069] A storage capacitor Cst may be connected between a first node N1 and a second node N2. For example, the first capacitor electrode of the storage capacitor Cst may be connected to the gate electrode of a drive transistor M1, and the second capacitor electrode of the storage capacitor Cst may be connected to the first electrode of a light-emitting diode LED.

[0070] Figure 4 shows that the drive transistor M1, the switching transistor M2, and the sensing transistor M3 are NMOS transistors, but the present invention is not limited to this. For example, at least one selected from the drive transistor M1, the switching transistor M2, and the sensing transistor M3 may be a PMOS transistor.

[0071] Figure 4 illustrates three transistors, but the present invention is not limited to these. The pixel circuit PC may include four or more transistors.

[0072] Figure 5 is a plan view showing the light-emitting diode and surrounding wiring of a display device according to one embodiment of the present invention.

[0073] Referring to Figure 5, a common voltage line VSL is arranged in the display area DA, with each common voltage line VSL extending along the y-direction. The common voltage lines VSL are spaced apart from each other, but light-emitting diodes, such as organic light-emitting diodes, may be placed between two adjacent common voltage lines VSL. In one embodiment, Figure 5 illustrates that first to third organic light-emitting diodes OLED1, OLED2, and OLED3 are arranged between two adjacent common voltage lines VSL.

[0074] The display area DA may have auxiliary lines extending along a direction (e.g., the x-direction) that intersects the common voltage line VSL. In one embodiment, Figure 5 illustrates that the first and second auxiliary lines AL1 and AL2 extend along the x-direction, and the first and second auxiliary lines AL1 and AL2 may be separated from each other with the first to third organic light-emitting diodes OLED1, OLED2, and OLED3 in between. Each common voltage line VSL may be electrically connected to at least one selected from the first and second auxiliary lines AL1 and AL2.

[0075] The structure illustrated in Figure 5 shows a part of the display area DA, and the display area DA can be seen as a repeating arrangement of the structure in Figure 5. For example, multiple common voltage lines VSL and multiple auxiliary lines are electrically connected while intersecting each other in the display area DA, and on the plan view, the common voltage lines VSL and auxiliary lines can form a mesh structure. When the display area DA has a relatively large area, a voltage drop occurs in the common voltage provided through the common voltage lines VSL, but the formation of a mesh structure on the plan view of the common voltage lines VSL and auxiliary lines can prevent or minimize the aforementioned voltage drop.

[0076] The auxiliary electrode 180 may be positioned to overlap (contour) a portion of the common voltage line VSL. The auxiliary electrode 180 may be electrically connected to the common voltage line VSL using first contact hole CT1 and second contact hole CT2, and may be powered from the common voltage line VSL. The second electrode (e.g., cathode) of the light-emitting diodes, such as the first to third organic light-emitting diodes OLED1, OLED2, and OLED3, may be electrically connected to the common voltage line VSL via the auxiliary electrode 180.

[0077] The common voltage line VSL can be electrically connected to an auxiliary common voltage line VSL-A, which is arranged to superimpose on the common voltage line VSL. For example, the auxiliary common voltage line VSL-A can be connected to the common voltage line VSL via a second contact hole CT2.

[0078] The first electrode 150 (e.g., anode) of each of the light-emitting diodes, for example, the first to third organic light-emitting diodes OLED1, OLED2, and OLED3, can be electrically connected to a pixel circuit located beneath them via a sixth contact hole CT6. The pixel circuit connected to each of the first to third organic light-emitting diodes OLED1, OLED2, and OLED3 may include multiple transistors and storage capacitors, as described in Figure 4 above.

[0079] Figure 6 is a cross-sectional view of the display device along the line A-A' in Figure 5.

[0080] Referring to Figure 6, a light-emitting diode, for example, a first organic light-emitting diode OLED1, is placed on the substrate 100, and a pixel circuit PC may be placed between the substrate 100 and the first organic light-emitting diode OLED1. Figure 6 shows the drive transistor M1 and storage capacitor Cst included in the pixel circuit PC. Although not shown in Figure 6, a second organic light-emitting diode OLED2 and a pixel circuit connected to it, and a third organic light-emitting diode OLED3 and a pixel circuit connected to it may also have the same structure as the pixel circuit PC shown in Figure 6.

[0081] The substrate 100 can consist of materials such as glass, metal, or organic matter. For example, the substrate 100 may contain glass material mainly composed of SiO2, or it may contain a variety of materials having flexible or bendable properties, such as polymer resins.

[0082] The drive transistor M1 may include a semiconductor layer A1 and a gate electrode G1. The semiconductor layer A1 may include an oxide-based material or a silicon-based material (e.g., amorphous silicon, polysilicon). For example, the semiconductor layer A1 may include an oxide of at least one material selected from the group including indium (In), gallium (Ga), tin (Sn), zirconium (Zr), vanadium (V), hafnium (Hf), cadmium (Cd), germanium (Ge), chromium (Cr), titanium (Ti), and zinc (Zn).

[0083] The semiconductor layer A1 may include a channel region C1 and first and second low-resistance regions B1 and D1 located on either side of the channel region C1. The first and second low-resistance regions B1 and D1 are regions with lower resistance than the channel region C1, and one of the first and second low-resistance regions B1 and D1 is the source region and the other is the drain region.

[0084] The semiconductor layer A1 is located on a first insulating layer 101 on the substrate 100. The first insulating layer 101 can prevent impurities from penetrating into the semiconductor layer A1. The first insulating layer 101 may contain an inorganic insulator such as silicon nitride, silicon oxide, and / or silicon oxynitride.

[0085] A second insulating layer 103 may be interposed between the semiconductor layer A1 and the gate electrode G1. The second insulating layer 103 is a type of gate insulating layer and may contain an inorganic insulator such as silicon nitride, silicon oxide, and / or silicon oxynitride.

[0086] The gate electrode G1 may be superimposed on the channel region C1 of the semiconductor layer A1. The gate electrode G1 may include molybdenum (Mo), copper (Cu), titanium (Ti), and may have a single-layer or multilayer structure containing the aforementioned materials.

[0087] One of the first and second low-resistance regions B1 and D1 of semiconductor layer A1 may be electrically connected to a drive voltage line VDL. The drive voltage line VDL may be located beneath the first insulating layer 101. Figure 4 illustrates that the drive voltage line VDL is connected to the second low-resistance region D1 via a connecting electrode CE on the third insulating layer 105.

[0088] The drive voltage line VDL may contain metallic materials such as molybdenum (Mo), copper (Cu), and titanium (Ti). For example, the drive voltage line VDL may include a laminated structure of a titanium layer (lower layer) and a copper layer (upper layer) that is thicker than the titanium layer. In other embodiments, the drive voltage line VDL may include a multilayer structure of one or more metallic layers containing the aforementioned metallic materials and a transparent conductive oxide layer such as ITO disposed on the aforementioned one or more metallic layers. The third insulating layer 105 may include an inorganic insulator such as silicon nitride, silicon oxide, and / or silicon oxynitride.

[0089] If the second low-resistance region D1 is the source region (or drain region), the connecting electrode CE is the source electrode (or drain electrode) of the drive transistor M1, and if the second low-resistance region D1 is the drain region (or source region), the connecting electrode CE may be the drain electrode (or source electrode) of the drive transistor M1. The connecting electrode CE may be connected to the drive voltage line VDL via a third contact hole CT3 that penetrates the first to third insulating layers 101, 103, and 105, and to a part of the semiconductor layer A1 of the drive transistor M1 (e.g., the second low-resistance region) D1 via a fourth contact hole CT4 that penetrates the second and third insulating layers 103 and 105. The connecting electrode CE may contain metallic materials such as molybdenum (Mo), copper (Cu), and titanium (Ti). For example, the connecting electrode CE may include a multilayer structure containing a titanium layer and a copper layer. In other embodiments, the connecting electrode CE may include a multilayer structure comprising one or more metal layers containing the aforementioned metallic substance and a transparent conductive oxide layer such as ITO disposed on the aforementioned one or more metal layers.

[0090] The storage capacitor Cst includes a first capacitor electrode CE1 and a second capacitor electrode CE2 superimposed on the first capacitor electrode CE1 with at least one insulating layer in between. The first capacitor electrode CE1 is formed on the same layer as the gate electrode G1 and may contain the same material. The first capacitor electrode CE1 may contain molybdenum (Mo), copper (Cu), titanium (Ti), etc., and may have a single-layer or multi-layer structure containing the aforementioned materials.

[0091] In some embodiments, the second capacitor electrode CE2 may include two subcapacitor electrodes CE2a and CE2b positioned below and above the first capacitor electrode CE1, flanking it. One of these subcapacitor electrodes CE2a and CE2b (hereinafter referred to as the first subcapacitor electrode; CE2a) may be positioned between the substrate 100 and the first insulating layer 101, while the other subcapacitor electrode (hereinafter referred to as the second subcapacitor electrode) CE2b may be positioned on the third insulating layer 105.

[0092] The first subcapacitor electrode CE2a and the second subcapacitor electrode CE2b include molybdenum (Mo), copper (Cu), titanium (Ti), and may have a single-layer or multilayer structure containing the aforementioned materials. In one embodiment, the first subcapacitor electrode CE2a may be located in the same layer as the drive voltage line VDL and may contain the same material.

[0093] The second subcapacitor electrode CE2b can be connected to the first subcapacitor electrode CE2a via a fifth contact hole CT5 that penetrates the first to third insulating layers 101, 103, and 105. A capacitance is formed between the first subcapacitor electrode CE2a and the first capacitor electrode CE1, which are superimposed on each other with the first and second insulating layers 101 and 103 in between, and a capacitance can be formed between the first capacitor electrode CE1 and the second subcapacitor electrode CE2b, which are superimposed on each other with the third insulating layer 105 in between. In this way, by including multiple subcapacitor electrodes in the second capacitor electrode CE2, the capacitance of the storage capacitor Cst can be improved.

[0094] The fourth insulating layer 107 is placed on the pixel circuit PC, which includes the drive transistor M1 and the storage capacitor Cst. The fourth insulating layer 107 may contain an inorganic insulator such as silicon nitride, silicon oxide, and / or silicon oxynitride. The fourth insulating layer 107 can prevent wiring containing metals (e.g., copper) that may be damaged by etching solutions during the manufacturing process of the display device from being exposed to the etching environment.

[0095] The fifth insulating layer 109 is disposed on the fourth insulating layer 107 and may contain an organic insulating material. The fifth insulating layer 109 may contain an organic insulating material such as acrylic, BCB (benzocyclobutene), polyimide, or HMDSO (hexamethyldisiloxane).

[0096] The first electrode 150 of the light-emitting diode is formed on the fifth insulating layer 109, and in connection with this, Figure 6 illustrates the first electrode 150 of the first organic light-emitting diode OLED1.

[0097] The first electrode 150 can be connected to the pixel circuit PC, for example, to the second subcapacitor electrode CE2b of the storage capacitor Cst, through a sixth contact hole CT6 that penetrates the fourth insulating layer 107 and the fifth insulating layer 109.

[0098] The first electrode 150 may include transparent conductive oxides such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), indium gallium oxide (IGO), or aluminum zinc oxide (AZO). In other embodiments, the first electrode 150 may include a reflective film containing silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), or compounds thereof. In other embodiments, the first electrode 150 may further include films made of ITO, IZO, ZnO, or In2O3 above / below the aforementioned reflective film. For example, the first electrode 150 may have a three-layer structure in which an ITO layer, a silver (Ag) layer, and an ITO layer are laminated.

[0099] The bank layer BNL covers the edge of the first electrode 150 and may include a first bank opening B-OP1 that overlaps with the central portion of the first electrode 150. The bank layer BNL may include an organic insulator such as polyimide.

[0100] The intermediate layer 160 may be in contact with the first electrode 150 via the first bank opening B-OP1 of the bank layer BNL. The laminated structure of the first electrode 150 located at the first bank opening B-OP1, the intermediate layer 160, and the second electrode 170 may emit light of a predetermined color. The first bank opening B-OP1 of the bank layer BNL may correspond to the light-emitting region EA. For example, the size (or width) of the first bank opening B-OP1 of the bank layer BNL may correspond to the size (or width) of the light-emitting region EA.

[0101] The intermediate layer 160 may include a light-emitting layer 162. The light-emitting layer 162 may include a polymer or low-molecular-weight organic substance that emits light of a predetermined hue. As described above with reference to Figure 2, when the light-emitting diode layer 300 (Figure 2) emits blue light, the light-emitting layer 162 may include a polymer or low-molecular-weight organic substance that emits blue light.

[0102] The intermediate layer 160 may further include at least one functional layer. In one embodiment, as shown in Figure 4, the intermediate layer 160 may further include a first functional layer 161 below the light-emitting layer 162 and / or a second functional layer 163 above the light-emitting layer 162. The first functional layer 161 may be interposed between the first electrode 150 and the light-emitting layer 162, and the second functional layer 163 may be interposed between the light-emitting layer 162 and a second electrode 170, which will be described later.

[0103] The first functional layer 161 may include a hole transport layer (HTL) and / or a hole injection layer (HIL). The second functional layer 163 may include an electron transport layer (ETL) and / or an electron injection layer (EIL).

[0104] The second electrode 170 may consist of a conductive material with a low work function. For example, the second electrode 170 may include a (semi)transparent layer containing silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (CA), or alloys thereof. Alternatively, the second electrode 170 may further include a layer of ITO, IZO, ZnO, or In2O3 on the (semi)transparent layer containing the aforementioned materials.

[0105] The sealing layer 400 may be placed on the second electrode 170. The sealing layer 400 may include at least one inorganic sealing layer and at least one organic sealing layer. In one embodiment, Figure 6 illustrates that the sealing layer 400 includes a first inorganic sealing layer 410, a second inorganic sealing layer 430, and an organic sealing layer 420 between the first inorganic sealing layer 410 and the second inorganic sealing layer 430.

[0106] The first and second inorganic sealing layers 410 and 430 may each contain one or more inorganic insulators. The inorganic insulators may include aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, and / or silicon oxynitride.

[0107] The organic encapsulation layer 420 may contain polymer-based materials. Polymer-based materials may include acrylic resins, epoxy resins, polyimides, and polyethylene. For example, the organic encapsulation layer 420 may contain acrylic resins, such as polymethyl methacrylate or polyacrylic acid. The organic encapsulation layer 420 can be formed by curing monomers or by coating a polymer.

[0108] An intermediate material layer 501 may be placed on the sealing layer 400. The intermediate material layer 501 may contain an inorganic insulator and / or an organic insulator. A color conversion-transmission layer 500 is located on the intermediate material layer 501. In connection with this, Figure 6 illustrates a light-shielding portion 540 of the color conversion-transmission layer 500, and a first color conversion portion 510 located in the aperture region defined by the light-shielding portion 540.

[0109] A barrier layer 550 may be formed on the color-transfer-transmitting layer 500. The barrier layer 550 may contain an inorganic insulator such as silicon oxide, silicon nitride, and / or silicon oxynitride.

[0110] The color layer 600 may be placed on the color conversion-transmission layer 500. In connection with this, Figure 6 illustrates the light-shielding portion 640 of the color layer 600 and the first color filter 610 located in the aperture region defined by the light-shielding portion 640. The light-shielding portion 540 of the color conversion-transmission layer 500 (hereinafter referred to as the first light-shielding portion) and the light-shielding portion 640 of the color layer 600 (hereinafter referred to as the second light-shielding portion) are arranged to overlap each other.

[0111] The first light-shielding section 540 and the second light-shielding section 640 may each contain a light-shielding substance. For example, the first light-shielding section 540 and the second light-shielding section 640 may each contain an organic substance having a predetermined color, such as black. For example, the first light-shielding section 540 and the second light-shielding section 640 may each contain a polyimide (PI) binder and a pigment mixture of red, green, and blue. Alternatively, the first light-shielding section 540 and the second light-shielding section 640 may each contain a cardo binder resin, a mixture of lactam black pigment and blue pigment. Alternatively, the first light-shielding section 540 and the second light-shielding section 640 may each contain carbon black.

[0112] In one embodiment, the first light-shielding portion 540 and the second light-shielding portion 640 may contain the same substance. In another embodiment, the second light-shielding portion 640 may include a structure in which at least two or more color filters forming the color layer 600 are superimposed. For example, the second light-shielding portion 640 may not contain the aforementioned light-shielding substance and may have a structure in which two or three color filter materials selected from the first to third color filters 610, 620, and 630 (Figure 2) are laminated.

[0113] The translucent substrate layer 700 may contain glass or a translucent organic material. For example, the translucent substrate layer 700 may contain a translucent organic material such as an acrylic resin.

[0114] Figure 7 is a plan view showing the structure of the common voltage line and auxiliary electrodes of a display device according to one embodiment of the present invention, and corresponds to a plan view of the display device that is an enlarged portion of Figure 5.

[0115] Referring to Figures 5 and 7, the common voltage line VSL extending along the y-direction may overlap with the auxiliary electrode 180 and the auxiliary common voltage line VSL-A. The length of the auxiliary common voltage line VSL-A (length in the y-direction) may be shorter than the length of the common voltage line VSL (length in the y-direction). The width of the auxiliary common voltage line VSL-A (width in the x-direction, W2) may differ from the width W1 of the common voltage line VSL. In one embodiment, the width W2 of the auxiliary common voltage line VSL-A may be narrower than the width W1 of the common voltage line VSL.

[0116] The common voltage line VSL and the auxiliary common voltage line VSL-A, which are located on different layers from each other, are connected through a first contact hole CT1 that penetrates the insulating layer placed between them, thereby reducing the resistance of the common voltage line VSL.

[0117] The auxiliary electrode 180 is positioned on the common voltage line VSL and the auxiliary common voltage line VSL-A. The auxiliary electrode 180 may overlap the common voltage line VSL and / or the auxiliary common voltage line VSL-A. The auxiliary electrode 180 may have a planar shape different from the common voltage line VSL and the auxiliary common voltage line VSL-A. For example, as shown in Figure 7, the auxiliary electrode 180 may include a relatively wide first portion (hereinafter referred to as the wide portion) 180A and a relatively narrow second portion (hereinafter referred to as the narrow portion) 180B in a plan view. The wide portion 180A and the narrow portion 180B are integrally connected.

[0118] The width (width in the x-direction) W3 of the wide section 180A is wider than the width (width in the x-direction) W4 of the narrow section 180B. The width W3 of the wide section 180A may be wider than the width of the common voltage line VSL and / or the auxiliary common voltage line VSL-A. In one embodiment, Figure 7 shows that the width W3 of the wide section 180A is wider than the width W2 of the auxiliary common voltage line VSL-A and narrower than the width W1 of the common voltage line VSL. In another embodiment, the width W3 of the wide section 180A may be wider than the width W2 of the auxiliary common voltage line VSL-A and the width W1 of the common voltage line VSL, respectively.

[0119] A portion of the auxiliary electrode 180 may be connected to either the common voltage line VSL or the auxiliary common voltage line VSL-A, which have the same voltage level. For example, the narrow portion 180B of the auxiliary electrode 180 may be connected to the auxiliary common voltage line VSL-A via the second contact hole CT2.

[0120] Other portions of the auxiliary electrode 180 may be connected to the second electrode 170 of the light-emitting diode (Figure 6). For example, the second electrode 170 of the light-emitting diode (Figure 6) may be connected to the wide portion 180A of the auxiliary electrode 180 through a hole 160H formed in the intermediate layer 160 (Figure 6) located beneath the second electrode.

[0121] In a plan view, the hole 160H of the intermediate layer overlaps with the wide portion 180A of the auxiliary electrode 180, but may be located within the second bank opening B-OP2 of the bank layer BNK (Figure 6). In a plan view, the hole 160H of the intermediate layer may as a whole overlap with the second bank opening B-OP2. On the other hand, the hole 160H of the intermediate layer may only partially overlap with the opening 109OP of the fifth insulating layer 109. Specifically, a part of the hole 160H of the intermediate layer may overlap with the opening 109OP of the fifth insulating layer 109, while the remaining part of the hole 160H may not overlap with the opening 109OP of the fifth insulating layer 109. The hole 160H of the intermediate layer may be positioned independently of the size (or width) of the opening 109OP of the fifth insulating layer 109. The specific structure of the auxiliary electrode 180 and its surrounding components will be described with reference to Figures 8 and 9.

[0122] Figure 8 is a cross-sectional view of the display device along the line B-B' in Figure 7, and Figure 9 is a cross-sectional view of the display device along the line C-C' in Figure 7.

[0123] Referring to Figures 7, 8, and 9, a common voltage line VSL is positioned on the substrate 100. The common voltage line VSL may be in direct contact with the upper surface of the substrate 100. The common voltage line VSL may contain metallic substances such as molybdenum (Mo), copper (Cu), and titanium (Ti). The common voltage line VSL may contain the same material as the drive voltage line VDL described above with reference to Figure 6. The common voltage line VSL may include a laminated structure of a titanium layer (lower layer) and a copper layer (upper layer) that is thicker than the titanium layer. In other embodiments, the common voltage line VSL may include a multilayer structure of one or more metallic layers containing the aforementioned metallic substances and a transparent conductive oxide layer, such as ITO, positioned on one or more of the aforementioned metallic layers.

[0124] An auxiliary common voltage line VSL-A is positioned on the common voltage line VSL, and at least one insulating layer may be placed between the common voltage line VSL and the auxiliary common voltage line VSL-A. In connection with this, Figures 8 and 9 illustrate that first to third insulating layers 101, 103, and 105 are positioned between the common voltage line VSL and the auxiliary common voltage line VSL-A.

[0125] The auxiliary common voltage line VSL-A may be connected to the common voltage line VSL via a first contact hole CT1 that penetrates the first to third insulating layers 101, 103, and 105, as shown in Figure 8. The auxiliary common voltage line VSL-A may contain metallic substances such as molybdenum (Mo), copper (Cu), and titanium (Ti). The auxiliary common voltage line VSL-A may contain the same substances as the common voltage line VSL. For example, the auxiliary common voltage line VSL-A may include a laminated structure of a titanium layer (lower layer) and a copper layer (upper layer) that is thicker than the titanium layer. In other embodiments, the auxiliary common voltage line VSL-A may contain different substances from the common voltage line VSL. For example, the auxiliary common voltage line VSL-A may include a multilayer structure of one or more metallic layers containing the aforementioned metallic substances and a transparent conductive oxide layer such as ITO placed on the aforementioned one or more metallic layers, whereas the common voltage line VSL may contain only layers containing metal without transparent conductive oxides.

[0126] The auxiliary common voltage line VSL-A may be protected by a fourth insulating layer 107. For example, the fourth insulating layer 107 can cover the auxiliary common voltage line VSL-A in direct contact with its upper surface. In particular, the fourth insulating layer 107 can cover a portion of the auxiliary common voltage line VSL-A immediately below the opening 109OP of the fifth insulating layer 109. The fourth insulating layer 107 may include an inorganic insulator, as described above.

[0127] The fifth insulating layer 109 is placed on the fourth insulating layer 107. The opening 109OP of the fifth insulating layer 109 can provide a degassing passage. For example, in the manufacturing process of a display device, gas contained in the fifth insulating layer 109, which is made of an organic insulator, can be released through the opening 109OP of the fifth insulating layer 109.

[0128] The opening 109OP of the fifth insulating layer 109 may overlap the auxiliary common voltage line VSL-A. In the process of forming the opening 109OP and / or in the process after the opening 109OP has been formed, the portion of the auxiliary common voltage line VSL-A located immediately below the opening 109OP may be covered (e.g., covered as a whole) with the fourth insulating layer 107 to prevent damage to the auxiliary common voltage line VSL-A. In one embodiment, the auxiliary common voltage line VSL-A may contain copper, which has relatively low resistance. For example, the auxiliary common voltage line VSL-A may include a laminated structure of a titanium layer (lower layer) and a copper layer (upper layer), and the relatively vulnerable copper layer may be covered by the fourth insulating layer 107 to prevent damage.

[0129] The auxiliary electrode 180 may be placed on the fifth insulating layer 109. The auxiliary electrode 180 may be connected to the auxiliary common voltage line VSL-A through a second contact hole CT2 that penetrates the fifth insulating layer 109 and the fourth insulating layer 107. Since the auxiliary common voltage line VSL-A is connected to the common voltage line VSL via a first contact hole CT1, the auxiliary electrode 180 may be electrically connected to the common voltage line VSL via the auxiliary common voltage line VSL-A.

[0130] The auxiliary electrode 180 may contain the same material as the first electrode (Figure 6) 150 of the light-emitting diode. For example, the auxiliary electrode 180 may include a laminated structure of an ITO layer, an Ag layer, and an ITO layer. A portion of the auxiliary electrode 180, for example, a wide portion 180A, may overlap the opening 109OP of the fifth insulating layer 109. The wide portion 180A of the auxiliary electrode 180 may be in direct contact with the upper surface of the fourth insulating layer 107 through the opening 109OP. For example, in the region corresponding to the opening 109OP of the fifth insulating layer 109, the upper surface of the fourth insulating layer 107 may be in direct contact with the auxiliary electrode 180, and the lower surface of the fourth insulating layer 107 may be in direct contact with the auxiliary common voltage line VSL-A.

[0131] The bank layer BNL may be placed on the auxiliary electrode 180. The bank layer BNL may include a second bank opening B-OP2 that overlaps with the wide portion 180A of the auxiliary electrode 180 and a third bank opening B-OP3 that overlaps with the narrow portion 180B of the auxiliary electrode 180.

[0132] The second bank opening B-OP2 overlaps with the entire opening 109OP of the fifth insulating layer 109, and the size (or width) ow2 of the second bank opening B-OP2 is larger than the size (or width) ow1 of the opening 109OP of the fifth insulating layer 109. Therefore, in the plan view of Figure 7, the opening 109OP of the fifth insulating layer 109 is located within the second bank opening B-OP2. In connection with this, Figure 7 illustrates that, in a plan view, the outline 109B of the opening 109OP of the fifth insulating layer 109 is located within the outline BNLB of the second bank opening B-OP2.

[0133] An intermediate layer 160 is arranged on the bank layer BNL, including a first functional layer 161, a light-emitting layer 162, and a second functional layer 163. A portion of the intermediate layer 160 is located within the second bank opening B-OP2, but includes a hole 160H that overlaps with a portion of the opening 109OP of the fifth insulating layer 109. The hole 160H of the intermediate layer 160 can penetrate the first functional layer 161, the light-emitting layer 162, and the second functional layer 163. The second electrode 170 of the light-emitting diode can be connected to the auxiliary electrode 180 through the hole 160H of the intermediate layer 160.

[0134] As shown in Figures 8 and 9, a portion of the holes 160H in the intermediate layer 160 may overlap with the openings 109OP in the fifth insulating layer 109, and the remaining portion of the holes 160H may overlap with the material portion of the fifth insulating layer 109. Since the holes 160H in the intermediate layer 160 are formed by partially overlapping with the openings 109OP in the fifth insulating layer 109, a hole 160H of a desired size (or width) can be formed at a desired location regardless of the size (or width) of the openings 109OP.

[0135] The center HC of hole 160H in the intermediate layer 160 may be located within the opening 109OP of the fifth insulating layer 109, as shown in Figure 9. That is, the center HC of hole 160H in the intermediate layer 160 may be located inside the inner edge 109oe of the fifth insulating layer 109, which defines the opening 109OP and corresponds to the outline 109B (Figure 7) of the fifth insulating layer 109. In other words, the center HC of hole 160H in the intermediate layer 160 may not be located beyond the inner edge 109oe of the fifth insulating layer 109 and above the material portion of the fifth insulating layer 109. The material portion of the fifth insulating layer 109 refers to the outer material portion surrounding the inner edge 109oe.

[0136] The holes 160H in the intermediate layer 160 can be formed by irradiation with a laser beam. In a comparative example of the present invention, if the center HC of the hole 160H in the intermediate layer 160 is outside the opening 109OP and superimposed on the material portion of the fifth insulating layer 109, the release of residual gas in the fifth insulating layer 109 may cause the fifth insulating layer 109 and / or the auxiliary electrode 180 placed on it to lift, potentially causing a connection failure between the auxiliary electrode 180 and the second electrode 170 of the light-emitting diode. The center HC of the hole 160H may be separated by a first distance d from the inner edge 109oe of the fifth insulating layer 109, which corresponds to the outline 109B of the opening 109OP, as shown in Figures 7 and 9. The first distance d may be about 1 μm or larger.

[0137] The sealing layer 400, which includes a first inorganic sealing layer 410, an organic sealing layer 420, and a second inorganic sealing layer 430, covers the contact area (or connection area) between the auxiliary electrode 180 and the second electrode 170 of the light-emitting diode. The contact area between the auxiliary electrode 180 and the second electrode 170 of the light-emitting diode may be superimposed on the intermediate material layer 501, the first light-shielding portion 540 of the color conversion-transmission layer 500, the barrier layer 550, the second light-shielding portion 640 of the color layer 600, and the light-transmitting substrate layer 700 on the sealing layer 400.

[0138] Figures 10 to 14 are cross-sectional views of a display device according to one embodiment of the present invention, following the manufacturing process. For convenience of explanation, Figures 10 to 14 are cross-sectional views of a display device according to the manufacturing process, showing a cross-sectional view along the line A-A' in Figure 5 and a cross-sectional view of a display device along the line C-C' in Figure 7.

[0139] Referring to Figure 10, the first electrode 150 and auxiliary electrode 180 of the light-emitting diode are formed on an insulating layer, for example, on a fifth insulating layer 109. The first electrode 150 and the auxiliary electrode 180 can be formed together in the same process and may contain the same material.

[0140] Before the first electrode 150 and auxiliary electrode 180 are formed on the substrate 100, a pixel circuit PC including a drive transistor M1 and a storage capacitor Cst may be formed on the substrate 100. Then, first to fifth insulating layers 101, 103, 105, 107, and 109 are formed on the substrate 100, and their specific materials and locations are as described above with reference to Figures 6, 8, and 9.

[0141] Together with the electrodes of the drive transistor M1 and / or storage capacitor Cst, a drive voltage line VDL, a common voltage line VSL, and an auxiliary common voltage line VSL-A may be formed. Although not shown in Figure 10, a first contact hole CT1 (Figure 8) may be formed through the first to third insulating layers 101, 103, and 105 prior to the formation of the auxiliary common voltage line VSL-A, and the common voltage line VSL may be connected to the auxiliary common voltage line VSL-A through the first contact hole CT1 (Figure 8). After the auxiliary common voltage line VSL-A is formed, a fourth insulating layer 107 containing an inorganic insulator may be formed.

[0142] The fifth insulating layer 109 is formed on the fourth insulating layer 107. The step of forming the fifth insulating layer 109 may include the step of forming a sixth contact hole CT6 for connecting the pixel circuit PC and the first electrode 150, and the step of forming an opening 1O9OP of the fifth insulating layer 109. The opening 109OP is formed by etching the portion of the fifth insulating layer 109 that overlaps with the auxiliary common voltage line VSL-A, and thus the opening 109OP can overlap with the auxiliary common voltage line VSL-A. Together with the opening 1O9OP of the fifth insulating layer 109, the second contact hole CT2 (Figure 8) described above in Figure 8 may be formed.

[0143] The bank layer BNL is formed on the first electrode 150 and the auxiliary electrode 180, and may include a first bank opening B-OP1 superimposed on the first electrode 150 and a second bank opening B-OP2 superimposed on the auxiliary electrode 180. The size (or width) of the second bank opening B-OP2 may be formed to be smaller than the size (or width) of the first bank opening B-OP1.

[0144] Referring to Figure 11, an intermediate layer 160 is formed on the bank layer BNL. The intermediate layer 160 can be superimposed on the first electrode 150 exposed through the first bank opening B-OP1 and the auxiliary electrode 180 exposed through the second bank opening B-OP2.

[0145] The intermediate layer 160 includes an emissive layer 162, and therefore the step of forming the intermediate layer 160 may include the step of forming the emissive layer 162. The step of forming the intermediate layer 160 may further include the step of forming a first functional layer 161 disposed below the emissive layer 162, and / or a second functional layer 163 disposed above the emissive layer 162. In Figure 11 and Figures 12 to 14 described later, the intermediate layer 160 is explained as including a first functional layer 161, an emissive layer 162, and a second functional layer 163.

[0146] Next, a laser beam is irradiated onto the intermediate layer 160 to form a hole 160H as shown in Figure 12. In one embodiment, a UV laser having a wavelength of approximately 300-400 nm is used as the laser beam, and the output per unit area is approximately 200 mJ / cm². 2 The following are possible:

[0147] When a laser beam is irradiated, the laser beam is located within the second bank aperture B-OP2, and the center of the laser beam may be located within the aperture 109OP of the fifth insulating layer 109. That is, the center of the laser beam may be located inside the inner edge 109oe of the fifth insulating layer 109, which corresponds to the contour line of the aperture 109OP of the fifth insulating layer 109. If the center of the laser beam overlaps with the material portion of the fifth insulating layer 109 beyond the inner edge 109oe, a lifting phenomenon of the fifth insulating layer 109 and / or the auxiliary electrode 180 occurs due to degassing, so it is appropriate for the center of the laser beam to be located within the aperture 109OP of the fifth insulating layer 109.

[0148] A laser beam can form holes 161H in the first functional layer 161, holes 162H in the light-emitting layer 162, and holes 163H in the second functional layer 163. The center of hole 162H in the light-emitting layer 162 may coincide with the center of the holes in the functional layers, for example, the center of hole 161H in the first functional layer 161 and the center of hole 162H in the light-emitting layer 162.

[0149] The holes 161H of the first functional layer 161, 162H of the light-emitting layer 162, and 163H of the second functional layer 163 are superimposed to form the hole 160H of the intermediate layer 160, which may correspond to the center of hole 161H of the first functional layer 161, the center of hole 162H of the light-emitting layer 162, the center of hole 163H of the second functional layer 163, and the center HC of hole 160H as described above with reference to Figure 9. The center HC of hole 160H may be spaced about a first distance d from the inner edge 109oe of the fifth insulating layer 109. For example, the first distance d may be about 1 μm or greater.

[0150] Next, as shown in Figure 13, a second electrode 170 of the light-emitting diode is formed. The second electrode 170 can be in direct contact with and electrically connected to the auxiliary electrode 180 through the hole 160H. The contact area between the second electrode 170 and the auxiliary electrode 180 is located within the second bank opening B-OP2, but a portion of it may be located on the inclined surface BSS of the fifth insulating layer 109.

[0151] Referring to Figure 14, a sealing layer 400 is formed on the second electrode 170. The sealing layer 400 may include first and second inorganic sealing layers 410 and 430 formed by chemical vapor deposition, and an organic sealing layer 420 formed by a method such as curing after applying a monomer. A color conversion-transmitting layer 500, a color layer 600, and a light-transmitting substrate layer 700 may be formed on the sealing layer 400.

[0152] In one embodiment, a lower structure LS is formed from the substrate 100 to the sealing layer 400, and an upper structure US is formed including a color conversion-transmitting layer 500, a color layer 600, and a light-transmitting substrate layer 700. Then, the lower structure LS and the upper structure US can be positioned and joined so that the sealing layer 400 and the color conversion-transmitting layer 500 face each other, with an intermediate material layer 501 in between.

[0153] In another embodiment, the lower structure LS and the upper structure US are not formed separately. Instead, an intermediate material layer 501 is formed on the sealing layer 400, and a color conversion-transmitting layer 500, a color layer 600, and a light-transmitting substrate layer 700 are sequentially formed on the intermediate material layer 501.

[0154] Although the present invention has been described based on one embodiment illustrated in the drawings, this is merely an example, and a person with ordinary skill in the art will understand that a variety of modifications and variations of the embodiment are possible. Therefore, the true scope of technical protection of the present invention must be determined by the technical idea of ​​the claims.

Claims

1. circuit board and An organic insulating layer having an opening is disposed on the substrate, The first electrode on the organic insulating layer, An auxiliary electrode is disposed on the organic insulating layer and includes a first portion that overlaps the opening of the organic insulating layer, A bank layer having a first bank opening superimposed on the first electrode, and a second bank opening superimposed on the first portion of the auxiliary electrode, An intermediate layer located on the first electrode and the auxiliary electrode, including a hole that exposes a part of the auxiliary electrode, The device includes a second electrode, which is arranged on the intermediate layer so as to overlap with the first electrode and the auxiliary electrode, and which contacts the auxiliary electrode through the holes in the intermediate layer, In a plan view, the hole in the intermediate layer partially overlaps with the opening in the organic insulating layer, and the display device is located within the second bank opening.

2. The display device according to claim 1, wherein, in a plan view, a portion of the hole in the intermediate layer is located at the opening in the organic insulating layer, and the remaining portion of the hole in the intermediate layer is located between the contour line of the opening in the organic insulating layer and the contour line of the second bank opening.

3. The organic insulating layer includes an inclined surface adjacent to the opening, The display device according to claim 1, wherein a portion of the contact area between the second electrode and the auxiliary electrode is located on the inclined surface of the organic insulating layer.

4. The display device according to claim 1, wherein the center of the hole in the intermediate layer is located within the opening in the organic insulating layer in a plan view.

5. The display device according to claim 4, wherein the center of the hole in the intermediate layer is separated by approximately 1 μm or more from the inner edge of the organic insulating layer that defines the opening in the organic insulating layer.

6. A common voltage line is arranged on the aforementioned substrate and extends in one direction, The present invention further includes an auxiliary common voltage line that superimposes on the common voltage line and is electrically connected to the common voltage line through a contact hole defined in at least one insulating layer interposed between the common voltage line and the auxiliary common voltage line, The display device according to claim 1, wherein the auxiliary common voltage line and the common voltage line overlap with the opening in the organic insulating layer.

7. The display device according to claim 6, further comprising an inorganic insulating layer in direct contact with the upper surface of the auxiliary common voltage line.

8. The first portion of the auxiliary electrode is It is superimposed on the opening of the organic insulating layer and has a width wider than the opening of the organic insulating layer, The aforementioned auxiliary electrode is It includes a second portion which is formed integrally with the first portion and has a narrower width than the first portion, The display device according to claim 7, wherein the second portion of the auxiliary electrode is electrically connected to the auxiliary common voltage line through a contact hole penetrating the organic insulating layer and the inorganic insulating layer.

9. The display device according to claim 1, wherein the intermediate layer includes a light-emitting layer, and the holes in the intermediate layer include holes penetrating the light-emitting layer.

10. A step of forming an organic insulating layer having openings on a substrate, The process of forming the first electrode on the organic insulating layer, The first part is a step of forming an auxiliary electrode on the organic insulating layer that is superimposed on the opening of the organic insulating layer, A step of forming a bank layer having a first bank opening superimposed on the first electrode and a second bank opening superimposed on the first portion of the auxiliary electrode, A step of forming an intermediate layer so as to be located on the first electrode and the auxiliary electrode, The process of forming a hole in the intermediate layer that exposes a part of the auxiliary electrode, The step includes forming a second electrode on the intermediate layer so as to contact the auxiliary electrode through the holes in the intermediate layer, A method for manufacturing a display device, wherein, in a plan view, the holes in the intermediate layer are located within the second bank opening without partially overlapping with the openings in the organic insulating layer.

11. The step of forming the hole includes the step of irradiating the intermediate layer with a laser beam, A method for manufacturing a display device according to claim 10, wherein a portion of the laser beam is located between the contour line of the aperture of the organic insulating layer and the contour line of the second bank aperture in a plan view.

12. The method for manufacturing a display device according to claim 11, wherein the center of the laser beam is located within the opening of the organic insulating layer.

13. The method for manufacturing a display device according to claim 10, wherein the center of the hole in the intermediate layer is separated by about 1 μm or more from the inner edge of the organic insulating layer that defines the opening in the organic insulating layer.

14. The organic insulating layer includes an inclined surface adjacent to the opening, The method for manufacturing a display device according to claim 10, wherein in the step of forming the second electrode, a portion of the contact area between the second electrode and the auxiliary electrode is located on the inclined surface of the organic insulating layer.

15. The first portion of the auxiliary electrode is It is superimposed on the opening of the organic insulating layer and has a width wider than the opening of the organic insulating layer, The aforementioned auxiliary electrode is A method for manufacturing a display device according to claim 10, comprising a second portion formed integrally with the first portion and having a narrower width than the first portion.

16. The process of forming a common voltage line that is placed on the substrate and extends in one direction, The process further includes the step of forming an auxiliary common voltage line that is superimposed on the common voltage line and electrically connected to the common voltage line through a contact hole defined in at least one insulating layer interposed between the common voltage line and the auxiliary common voltage line, The method for manufacturing a display device according to claim 15, wherein the auxiliary common voltage line and the common voltage line overlap with the opening in the organic insulating layer.

17. The method for manufacturing a display device according to claim 16, further comprising the step of forming an inorganic insulating layer on the auxiliary common voltage line.

18. The method for manufacturing a display device according to claim 17, further comprising the step of forming a contact hole penetrating the organic insulating layer and the inorganic insulating layer so that the second portion of the auxiliary electrode is electrically connected to the auxiliary common voltage line.

19. The method for manufacturing a display device according to claim 10, wherein, in a plan view, a portion of the outline of the opening in the organic insulating layer overlaps the hole in the intermediate layer.

20. The step of forming the intermediate layer includes the step of forming a light-emitting layer so as to overlap with the first electrode and the auxiliary electrode, The method for manufacturing a display device according to claim 10, wherein the step of forming the hole includes the step of forming a hole that penetrates the light-emitting layer.

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