Semiconductor manufacturing equipment, delamination unit, and method for manufacturing semiconductor equipment

Abstract

To provide a technology which enables reduction of a laser beam returning to a laser radiation device.SOLUTION: A semiconductor manufacturing device includes: a wafer holding stand for holding a dicing tape which is formed by an adhesive sheet configured to be peeled by a laser beam and to which dies are adhered; and a peeling unit provided below the dicing tape. The peeling unit includes a laser radiation part having a cavity having an opening at an upper part, and a laser radiation device provided below the opening. The laser radiation device is provided so that a radiation direction of the laser beam radiated from the laser radiation device inclines relative to a normal direction of a surface of the dicing tape and the laser beam is radiated to the dicing tape through the opening.SELECTED DRAWING: Figure 6

Description

Technical Field

[0001] The present disclosure relates to a semiconductor manufacturing apparatus, and is applicable to, for example, a die bonder that uses a dicing tape whose adhesive force is eliminated by irradiation with laser light.

Background Art

[0002] A semiconductor manufacturing apparatus such as a die bonder is an apparatus that bonds (places and adheres) an element onto a substrate or another element using a bonding material. The bonding material is, for example, a liquid or film-shaped resin, solder, or the like. The element is, for example, a die such as a semiconductor chip, MEMS (Micro Electro Mechanical System), and glass chip, or an electronic component. The substrate is, for example, a wiring substrate, a lead frame formed of a thin metal plate, a glass substrate, or the like.

[0003] For example, in the die bonding process by a die bonder, there is a peeling process of peeling a die separated from a semiconductor wafer (hereinafter simply referred to as a wafer) from a dicing tape. The dicing tape has an adhesive layer, and the wafer is attached thereto. In the peeling process, the die is pushed up by a push-up block or the like from the back surface of the dicing tape, peeled one by one from the dicing tape held by the die supply unit, and conveyed onto the substrate using a suction nozzle such as a collet.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] In the peeling process, when peeling and picking up a die from a dicing tape, cracks or chips may occur in the die.

[0006] The object of this disclosure is to provide a technology capable of reducing die cracking and chipping. Other issues and novel features will become apparent from the description herein and the accompanying drawings. [Means for solving the problem]

[0007] A brief overview of some of the representative disclosures is as follows: In other words, the semiconductor manufacturing apparatus comprises a wafer holder that holds a dicing tape on which a die is attached, which is formed from an adhesive sheet that is peeled off by laser light, and a peeling unit provided below the dicing tape. The peeling unit comprises a laser irradiation section having a cavity with an opening at the top and a laser irradiation device provided below the opening. The laser irradiation device is provided such that the irradiation direction of the laser light emitted from the laser irradiation device is inclined with respect to the normal direction of the surface of the dicing tape, and the laser light is irradiated onto the dicing tape through the opening. [Effects of the Invention]

[0008] According to this disclosure, it is possible to reduce die cracking and chipping. [Brief explanation of the drawing]

[0009] [Figure 1] Figure 1 is a schematic top view showing an example of the configuration of a die bonder in an embodiment. [Figure 2] Figure 2 is a diagram illustrating the schematic configuration as seen from the direction of arrow A in Figure 1. [Figure 3] Figure 3 is a schematic cross-sectional view showing the main part of the wafer supply unit shown in Figure 1. [Figure 4] Figure 4 is a flowchart showing a method for manufacturing a semiconductor device using the die bonder shown in Figure 1. [Figure 5] Figure 5 is a top view of the peeling unit shown in Figure 2. [Figure 6] Figure 6 is a cross-sectional view of the peeling unit shown in Figure 5 along line AA. [Figure 7]Figure 7(a) is a schematic diagram showing the peeling unit, dicing tape, die, and collet in a comparative example. Figure 7(b) shows the peeling unit, dicing tape, die, and collet in an embodiment. [Figure 8] Figure 8 is a schematic diagram showing the peeling unit, dicing tape, die, and collet in the first modified example. [Figure 9] Figure 9(a) shows the intensity transition of the laser light source in the embodiment. Figure 9(b) shows the intensity transition of the laser light source in the second modified example. [Figure 10] Figures 10(a) and 10(b) show the configuration and operation of the laser irradiation device in the third modified example. [Figure 11] Figures 11(a) to 11(c) are cross-sectional views of the irradiation range limiting component in the fourth modified example. [Modes for carrying out the invention]

[0010] Embodiments and modified examples will be described below with reference to the drawings. However, in the following description, the same reference numerals will be used for identical components, and repeated explanations may be omitted. In addition, to make the explanation clearer, the drawings may schematically represent the width, thickness, shape, etc. of each part compared to the actual embodiment. Furthermore, the dimensional relationships and ratios of each element do not necessarily match between multiple drawings.

[0011] The configuration of a die bonder, which is one embodiment of a semiconductor manufacturing apparatus, will be explained using Figures 1 to 3. Figure 1 is a schematic top view showing an example of the configuration of a die bonder in the embodiment. Figure 2 is a diagram illustrating the schematic configuration when viewed from the direction of arrow A in Figure 1. Figure 3 is a schematic cross-sectional view showing the main part of the wafer supply section shown in Figure 1.

[0012] The die bonder 1 generally includes a wafer supply unit 10, a pickup unit 20, an intermediate stage unit 30, a bonding unit 40, a transfer unit 50, a substrate supply unit 60, a substrate discharge unit 70, and a control unit (control device) 80. The Y direction is the front-rear direction of the die bonder 1, the X direction is the left-right direction, and the Z direction is the up-down direction. The wafer supply unit 10 is arranged on the front side of the die bonder 1, and the bonding unit 40 is arranged on the rear side.

[0013] The wafer supply unit 10 includes a wafer cassette lifter 11, a wafer holding stage 12, a peeling unit 13, and a wafer recognition camera 14.

[0014] The wafer cassette lifter 11 moves a wafer cassette (not shown) in which a plurality of wafer rings WR are stored up and down to the wafer transfer height. A wafer alignment chute (not shown) aligns the wafer ring WR supplied from the wafer cassette lifter 11. A wafer extractor (not shown) takes out the wafer ring WR from the wafer cassette and supplies it to the wafer holding stage 12, or takes it out from the wafer holding stage 12 and stores it in the wafer cassette.

[0015] The wafer holding stage 12 includes an expand ring 121 that holds the wafer ring WR, and a support ring 122 that horizontally positions the dicing tape DT held by the wafer ring WR. The peeling unit 13 is arranged inside the support ring 122. In order to improve the pick-up property of the die D, when the die D is peeled off, the expand ring 121 holding the wafer ring WR is lowered, and the dicing tape DT held by the wafer ring WR is stretched and the interval between the dies D is widened.

[0016] A wafer W is adhered (attached) to the dicing tape DT, and the wafer W is divided into a plurality of dies D. A film-like adhesive material DF called a die attach film (DAF) is pasted between the wafer W and the dicing tape DT. The adhesive material DF cures by heating.

[0017] As the dicing tape DT, for example, a heat-release tape that has adhesive force at normal temperature and whose adhesive layer expands and the adhesive force weakens and peels off when heated is used. Note that the heat-release tape preferably peels off at a temperature lower than the curing temperature of the adhesive material DF (usually 150°C). Also, the curing of the adhesive material DF takes a long time (about 1 hour) at a specified temperature. When the heating time of the heat-release tape is short, the peeling temperature of the heat-release sheet may be about the same as the curing temperature of the adhesive material DF.

[0018] The wafer holding stage 12 is moved in the XY directions by a drive unit (not shown) and moves the die D to be picked up to the position of the peeling unit 13. Also, the wafer holding stage 12 rotates the wafer ring WR within the XY plane by a drive unit (not shown). The peeling unit 13 is moved in the vertical direction by a drive unit (not shown). The peeling unit 13 peels the die D from the dicing tape DT.

[0019] The wafer recognition camera 14 grasps the pick-up position of the die D picked up from the wafer W or inspects the surface of the die D.

[0020] The pick-up unit 20 includes a pick-up head 21 and a Y drive unit 23. A collet 22 for sucking and holding the peeled die D at its tip is provided on the pick-up head 21. The pick-up head 21 picks up the die D from the wafer supply unit 10 and places it on the intermediate stage 31. The Y drive unit 23 moves the pick-up head 21 in the Y-axis direction. The pick-up unit 20 has drive units (not shown) for moving the pick-up head 21 up and down, rotating it, and moving it in the X direction.

[0021] The intermediate stage unit 30 includes an intermediate stage 31 on which the die D is placed and a stage recognition camera 34 for recognizing the die D on the intermediate stage 31. The intermediate stage 31 has suction holes for sucking the placed die D. The placed die D is temporarily held on the intermediate stage 31. The intermediate stage 31 is a placement stage on which the die D is placed and also a pick-up stage from which the die D is picked up.

[0022] The bonding unit 40 includes a bond head 41, a Y drive unit 43, a substrate recognition camera 44, and a bond stage 46. The bond head 41 is provided with a collet 42 that adsorbs and holds the die D at its tip. The Y drive unit 43 moves the bond head 41 in the Y-axis direction. The substrate recognition camera 44 images the substrate S and recognizes the bond position. Here, the substrate S has multiple product areas (hereinafter referred to as package areas P) which will ultimately form a single package. The substrate S also has position recognition marks (not shown) for the package areas P. The bond stage 46 is raised when the die D is placed on the substrate S to support the substrate S from below. The bond stage 46 has a suction port (not shown) for vacuum adsorption of the substrate S, and can fix the substrate S in place. The bond stage 46 has a heating unit (not shown) for heating the substrate S. The bonding unit 40 has drive units (not shown) that move the bond head 41 up and down, rotate and move it in the X direction.

[0023] With this configuration, the bond head 41 corrects its pickup position and orientation based on the image data from the stage recognition camera 34 and picks up the die D from the intermediate stage 31. Then, the bond head 41 bonds the die D onto the package area P of the substrate S based on the image data from the substrate recognition camera 44, or bonds it in a stacking manner on top of a die that has already been bonded to the package area P of the substrate S.

[0024] The transport unit 50 includes transport claws 51 that grasp and transport the substrate S, and a transport lane 52 on which the substrate S moves. The substrate S moves in the X direction by driving nuts (not shown) of the transport claws 51, which are provided on the transport lane 52, with ball screws (not shown) provided along the transport lane 52. With this configuration, the substrate S moves from the substrate supply unit 60 along the transport lane 52 to the bonding position, and after bonding, moves to the substrate discharge unit 70 and hands over the substrate S to the substrate discharge unit 70.

[0025] The substrate supply unit 60 takes the substrates S that have been stored in the transport jig and brought in, and supplies them to the transport unit 50. The substrate discharge unit 70 stores the substrates S that have been transported by the transport unit 50 into the transport jig.

[0026] The control unit 80 includes a storage device that stores programs (software) and data for monitoring and controlling the operation of each part of the die bonder 1, a central processing unit (CPU) that executes the programs stored in the storage device, and an input / output device (not shown). The input / output device includes an image acquisition device (not shown) and a motor control device (not shown), etc. The image acquisition device acquires image data from the wafer recognition camera 14, the stage recognition camera 34, and the substrate recognition camera 44. The motor control device controls the drive unit of the wafer supply unit 10, the drive unit of the pickup unit 20, the drive unit of the bonding unit 40, etc.

[0027] A part of the semiconductor device manufacturing process using die bonder 1 (method of manufacturing a semiconductor device) will be explained with reference to Figure 4. Figure 4 is a flowchart of the method of manufacturing a semiconductor device using die bonder shown in Figure 1. In the following explanation, the operation of each part constituting die bonder 1 is controlled by control unit 80.

[0028] (Wafer loading process: Process S1) The wafer ring WR is supplied to the wafer cassette of the wafer cassette lifter 11. The supplied wafer ring WR is then supplied to the wafer holder 12. The wafers W are inspected beforehand by an inspection device such as a prober, and wafer map data indicating good or bad quality is generated for each die and stored in the memory device of the control unit 80.

[0029] (Substrate loading process: Process S2) The transport jig containing the substrate S is supplied to the substrate supply unit 60. The substrate supply unit 60 removes the substrate S from the transport jig and fixes the substrate S to the transport claws 51.

[0030] (Pickup process: Process S3) After step S1, the wafer holder 12 is moved so that the desired die D can be picked up from the dicing tape DT. The die D is photographed by the wafer recognition camera 14, and the die D is positioned and its surface inspected based on the image data acquired by the photograph. By processing the image data, the amount of displacement (in the X, Y, and θ directions) of the die D on the wafer holder 12 from the die position reference point of the die bonder is calculated, and positioning is performed. The die position reference point is a predetermined position on the wafer holder 12, which is held as the initial setting of the device. The surface inspection of the die D is performed by processing the image data.

[0031] The positioned die D is peeled from the dicing tape DT by the peeling unit 13 and the pickup head 21. The die D, peeled from the dicing tape DT, is attracted and held by the collet 22 provided on the pickup head 21, and is transported to and placed on the intermediate stage 31.

[0032] The die D on the intermediate stage 31 is photographed by the stage recognition camera 34, and the die D is positioned and its surface inspected based on the image data acquired by the camera. By processing the image data, the amount of displacement (in the X, Y, and θ directions) of the die D on the intermediate stage 31 from the die position reference point of the die bonder is calculated, and positioning is performed. The die position reference point is a predetermined position on the intermediate stage 31, which is held as the initial setting of the device. The surface inspection of the die D is performed by processing the image data.

[0033] The pickup head 21, which has transported die D to the intermediate stage 31, is returned to the wafer supply unit 10. Following the procedure described above, the next die D is peeled off from the dicing tape DT, and thereafter, die D is peeled off one by one from the dicing tape DT following the same procedure.

[0034] (Bond process: Process S4) The transport unit 50 transports the substrate S to the bond stage 46. The substrate S placed on the bond stage 46 is imaged by the substrate recognition camera 44, and image data is acquired by the image capture. By processing the image data, the amount of displacement of the substrate S from the substrate position reference point of the die bonder 1 (in the X, Y, and θ directions) is calculated. The substrate position reference point is a predetermined position of the bonding unit 40, which is held as the initial setting of the device.

[0035] In step S3, the suction position of the bond head 41 is corrected based on the amount of displacement of the die D on the intermediate stage 31 calculated, and the die D is picked up by the collet 42. The die D is bonded to a predetermined location on the substrate S supported by the bond stage 46 by the bond head 41, which has picked up the die D from the intermediate stage 31. The die D bonded to the substrate S is photographed by the substrate recognition camera 44, and an inspection is performed based on the image data acquired by the photograph to determine whether the die D has been bonded to the desired position.

[0036] The bond head 41, having bonded die D to the substrate S, is returned to the intermediate stage 31. Following the procedure described above, the next die D is picked up from the intermediate stage 31 and bonded to the substrate S. This process is repeated until die D is bonded to all package areas P on the substrate S.

[0037] (Substrate unloading process: Process S5) The substrate S to which the die D has been bonded is transported to the substrate discharge section 70. In the substrate discharge section 70, the substrate S is removed from the transport claws 51 and stored in the transport jig. The transport jig containing the substrate S is discharged from the die bonder 1.

[0038] As described above, die D is mounted on substrate S and discharged from die bonder 1. Subsequently, for example, the transport jig containing substrate S with die D mounted on it is transported to the wire bonding process, where the electrodes of die D are electrically connected to the electrodes of substrate S via Au wire or the like. Then, substrate S is transported to the molding process, where die D and Au wire are sealed with molding resin (not shown) to complete the semiconductor package.

[0039] In the case of laminated bonding, following the wire bonding process, a transport jig containing a substrate S on which dies D are mounted is brought into the die bonder, where dies D are laminated on top of the dies D mounted on the substrate S. After being removed from the die bonder, the dies D are electrically connected to the electrodes of the substrate S via Au wires in the wire bonding process. Dies D from the second stage upwards are peeled off from the dicing tape DT in the manner described above, then transported to the bonding section and laminated on top of the dies D. After the above process is repeated a predetermined number of times, the substrate S is transported to the molding process, where the multiple dies D and Au wires are sealed with molding resin (not shown) to complete the laminated package.

[0040] Next, the configuration of the peeling unit will be explained using Figures 5 and 6. Figure 5 is a top view of the peeling unit shown in Figure 2. Figure 6 is a cross-sectional view of the peeling unit shown in Figure 5 along line AA.

[0041] The peeling unit 13 includes a laser irradiation unit 131 that irradiates the dicing tape DT with laser light, a suction unit 132 that sucks up the dicing tape DT, a cylindrical dome 133 that holds them together, and a dome plate 134 that covers the dome 133.

[0042] The dome plate 134 has an opening where the laser irradiation unit 131 is positioned, and around its periphery are provided a plurality of suction ports 134a and a plurality of grooves 134b connecting the plurality of suction ports 134a. The suction ports 134a communicate with the cavities 132a of the suction unit 132 located below. The cavities 132a are configured in an annular shape around the laser irradiation unit 131. The cavities 132a communicate with the pipe 132b and are connected to a vacuum pump. The insides of the suction ports 134a and grooves 134b are depressurized by the vacuum pump when the peeling unit 13 is raised and its upper surface is brought into contact with the back surface of the dicing tape DT, so that the back surface of the dicing tape DT other than the die to be picked up is in close contact with the upper surface of the dome plate 134. The suction ports 134a and the suction unit 132 (cavities 132a, pipe 132b) constitute a vacuum path.

[0043] To prevent the surrounding die from overheating due to the temperature rise of the dome plate 134 caused by heat from the laser irradiation unit 131, a gap G is provided between the laser irradiation unit 131 and the dome plate 134, and air insulation is provided. The width of the gap G is, for example, about 0.5 mm. In addition, to reduce the temperature rise of the dome plate 134, a cooling unit may be provided below the cavity 132a, separated by a wall. The cooling unit is composed of, for example, a cavity provided in an annular shape around the laser irradiation unit 131 and a pipe communicating with the cavity. Cooling gas is supplied from the pipe to the cavity, and the supplied cooling gas is discharged to the outside of the cooling unit through an exhaust hole provided in the wall forming the cavity.

[0044] The laser irradiation unit 131 comprises a cavity 131a, a laser irradiation device 131c, and an irradiation range limiting component 131d having an opening. An opening 131b is provided at the top of the cavity 131a. The laser irradiation device 131c irradiates the dicing tape DT with laser light through the opening 131b and the opening of the irradiation range limiting component 131d to heat it directly. Here, the laser irradiation device 131c is installed so that its optical axis is oblique to the direction that does not coincide with the normal direction of the surface of the dicing tape DT. In the opening 131b, the laser irradiation device 131c has an irradiation range that extends across the entire opening 131b. That is, the irradiation range of the laser irradiation device 131c is fixed and is larger than the size of the die D. For example, an infrared heating laser with a wavelength of about 940 nm is used in the laser irradiation device 131c.

[0045] The irradiation range limiting component 131d is composed of, for example, a rectangular plate having an opening. The plate is a mask that blocks the laser light. The opening of the plate matches the shape and size (die size) of the die D and is replaceable. In other words, the irradiation range limiting component 131d allows the irradiation range to be adjusted according to the die size. The irradiation range limiting component 131d may also be made adjustable using an aperture (a component with a variable aperture area) composed of, for example, two L-shaped plates combined together. By using the irradiation range limiting component 131d, the laser light can be irradiated according to the die size, and heating of unnecessary parts can be prevented.

[0046] According to the embodiment, it has at least one of the following effects.

[0047] (a) Since a push-up block like the one in Patent Document 1 is not used, the push-up block cannot be pushed up higher than the dome plate. This makes it possible to pick up with low stress and reduces cracking and chipping of the die.

[0048] (b) By selectively irradiating the portion of the dicing tape DT located beneath the die D to be picked up with laser light, it is possible to reduce the conduction of heat to the dies located around the die to be picked up (the die to be peeled off) and to the dicing tape DT beneath the peripheral dies. This suppresses the tendency of the peripheral dies to peel off and reduces the risk of damage.

[0049] Other effects of this embodiment besides those described above will be explained using Figures 7(a) and 7(b). Figure 7(a) is a schematic diagram showing the peeling unit, dicing tape, die, and collet in a comparative example. Figure 7(b) is a schematic diagram showing the peeling unit, dicing tape, die, and collet in the embodiment.

[0050] As shown in Figure 7(a), the laser irradiation device 131c of the peeling unit 13 in the comparative example is configured to irradiate the laser beam LL along the direction normal to the dicing tape DT. Therefore, the laser beam RL that is specularly reflected by the surface of the adhesive layer of the dicing tape DT is reflected back in the same direction as the irradiation direction (the direction normal to the dicing tape DT), and thus returns to the laser irradiation device 131c, causing the light source to overheat.

[0051] As shown in Figure 7(b), the laser irradiation device 131c of the peeling unit 13 in this embodiment is configured to irradiate the laser beam LL in a direction that does not coincide with the normal direction of the dicing tape DT. Therefore, the laser beam RL that is specularly reflected by the surface of the adhesive layer of the dicing tape DT is reflected in a direction different from the irradiation direction and does not return to the laser irradiation device 131c. This prevents overheating of the laser irradiation device due to the return of laser beam, thereby preventing a shortened lifespan of the laser irradiation device and instability of the irradiation intensity.

[0052] Furthermore, when heating with laser light LL, the collet 22 is kept in a waiting position without contacting the die D, as shown in Figure 7(b). This prevents heating of the collet 22 via the die D. In addition, the conduction of cold and heat from the collet 22 to the die D (dicing tape DT) is suppressed, making it possible to heat the dicing tape DT efficiently.

[0053] <Variation> The following are some representative examples of modifications of the embodiments. In the following descriptions of modifications, the same reference numerals as in the embodiments described above may be used for parts having the same configuration and function as those described in the embodiments described above. Furthermore, the descriptions of such parts may be appropriately referenced from the embodiments described above, to the extent that they do not contradict the technical standards. In addition, some of the embodiments described above, and all or some of the modifications, may be applied in combination as appropriate, to the extent that they do not contradict the technical standards.

[0054] (First torture) Figure 8 is a schematic diagram showing the peeling unit, dicing tape, die, and collet in the first modified example.

[0055] In the first modified example, the peeling unit 13 differs from the peeling unit in the embodiment in that it uses a different laser light source, but the other configurations are the same.

[0056] In this modified example, the laser irradiation device 131c uses a laser with an irradiation range (spot) smaller than the die size. The laser irradiation device 131c is configured to scan the area where the die D is located under the control of the control unit 80. The spot diameter of the laser irradiation device 131c is, for example, about 0.05 mm to 0.5 mm. The reflected light does not concentrate in the same place, and heating of the laser irradiation device 131c can be suppressed.

[0057] Furthermore, as the spot of the laser irradiation device 131c moves inside the four sides of die D, areas will appear at the four corners of die D that are not irradiated by the laser. There is a gap between adjacent dies corresponding to the width of the dicing blade. This gap widens further when the dicing tape is expanded. For example, even if the center of the spot of the laser irradiation device 131c moves to the four sides of die D, if the spot diameter is smaller than the gap mentioned above, it will not directly heat the dicing tape DT below the adjacent die. This makes it possible to avoid using the irradiation range limiting component 131d.

[0058] Alternatively, the control unit 80 may use the wafer recognition camera 14 to recognize in advance the area where the die D to be scanned by the laser is located, and then determine the die size, position, and shape, and scan according to the size.

[0059] Furthermore, a camera may be installed in the laser irradiation unit 131 within the dome plate 134, and the control unit 80 may illuminate the die D from above with illumination light from the lighting device for the wafer recognition camera 14, while simultaneously photographing the dicing tape DT from below with the camera in the laser irradiation unit 131. This makes the dicing line recognizable and allows the position of the die D to be scanned to be determined. This enables more accurate laser scanning.

[0060] Furthermore, the control unit 80 may control the irradiation pattern of the laser irradiation device 131c so that it irradiates not only in a continuous line pattern, but also in a dot pattern or an intermittent line pattern. This makes it possible to control overheating of the heat-peelable dicing tape and shorten the laser irradiation time.

[0061] Furthermore, the direction, scanning time, and speed of the laser beam may be arbitrarily set. This allows control over the order and degree of expansion of the thermal release dicing tape according to the product specifications (die thickness, size, shape, etc.), as well as control over heat conduction to parts other than the die being released.

[0062] (Second variation) Figure 9(a) shows the intensity transition of the laser light in the embodiment. Figure 9(b) shows the intensity transition of the laser light in the second modified example. In Figures 9(a) and 9(b), the horizontal axis is time (t) and the vertical axis is the intensity of the laser light (LI).

[0063] As shown in Figure 9(a), in this embodiment, the laser irradiation device 131c is controlled by simple ON / OFF control and does not control the intensity of the laser light. Therefore, heating (excessive heating (OH)) occurs even after the foaming (FF) of the adhesive layer of the dicing tape DT. Since excessive heat is generated, it is necessary to retract the collet 22.

[0064] As shown in Figure 9(b), in the second modified example, the laser irradiation device 131c controls the intensity of the laser light in addition to being switched ON / OFF. That is, the laser irradiation device 131c only irradiates with sufficient intensity for foaming. After foaming, low-intensity preheating irradiation is continued to prevent the temperature from dropping due to heat transfer to the die D and collet 22 and to prevent foaming from stopping. This makes it possible to reduce the generation of excessive heat.

[0065] (Third variation) Figures 10(a) and 10(b) show the configuration and operation of the laser irradiation device in the third modified example.

[0066] In the third modified example, the laser irradiation device 131c has an optical system such as a focusing lens 101, and the laser is introduced from an externally installed laser light source to the laser irradiation device 131c via an optical fiber 102 or the like.

[0067] As shown in Figure 10(a), the laser irradiation device 131c can change the laser irradiation range (SS) according to the die size (aperture area of ​​the irradiation range limiting component 131d) using an optical system. This makes it possible to further reduce heating of the irradiation range limiting component 131d.

[0068] As shown in Figure 10(b), the irradiation device 131c can change not only the irradiation range of the laser beam but also the irradiation shape. This makes it possible to uniformly irradiate the die with the illuminance of the obliquely irradiated laser beam across the die size, thereby enabling trapezoidal processing of the laser beam irradiated onto the die.

[0069] (Fourth variation) Figures 11(a) to 11(c) are cross-sectional views of the irradiation range limiting component in the fourth modified example.

[0070] Since the irradiation range limiting component 131d is irradiated with laser light, it is preferable to provide a heating suppression means to reduce heating of the irradiation range limiting component 131d. This reduces heating of the irradiation range limiting component 131d and reduces heating of the dicing tape DT other than the portion of the dicing tape DT located beneath the die to be peeled by the irradiation range limiting component 131d. For example, it is possible to reduce heating of the portion of the dicing tape DT located beneath the die adjacent to the die to be peeled (adjacent die).

[0071] The following are some examples of heating suppression methods. These heating suppression methods may be combined.

[0072] As shown in Figure 11(a), a reflector 103 is provided on the back surface (the side facing the laser irradiation device 131c) of the irradiation range limiting component 131d, facing in a direction that does not directly reflect back to the laser irradiation device 131c. This reflector is, for example, a gold-plated plate if the laser irradiation device 131c is an infrared laser.

[0073] As shown in Figure 11(b), the irradiation range limiting component 131d may be shaped to reduce the area in contact with the dicing tape DT. For example, a protrusion 104 and a recess 105 are provided on the upper surface of the irradiation range limiting component 131d. Here, it is preferable that the sum of the upper surface areas of the protrusions 104 is smaller than the sum of the bottom surface areas of the recesses 105. For example, the protrusions 104 are pin-shaped with a small upper surface area.

[0074] As shown in Figure 11(c), a cooling mechanism 106 may be provided on the irradiation range limiting component 131d. An example of a cooling mechanism is a Peltier element.

[0075] The irradiation range limiting component 131d may be made of a material with low thermal conductivity, such as a resin. Examples of resins include engineering plastics such as polyether ether ketone and polyoxymethylene.

[0076] The disclosures made by the Disclosers have been described in detail above based on embodiments and modifications, but it goes without saying that the disclosures are not limited to the embodiments and modifications described above and can be modified in various ways.

[0077] For example, in the embodiment, the case in which heat-release tape is used as the dicing tape was described, but the invention is not limited to this, and UV-release tape may also be used.

[0078] Furthermore, although the embodiment describes an example in which the laser irradiation unit 131 is placed inside the dome plate 134, the invention is not limited to this, and the laser irradiation unit 131 may be placed outside the dome plate 134 to enable scanning of the laser beam across the entire wafer. In this case, if high accuracy in recognizing the pickup position is not required, the dome plate may not be provided. This makes it possible to irradiate only the die to be peeled with laser light and pick it up without moving the wafer. If high accuracy in recognizing the pickup position is required, the laser beam may be irradiated only on the dicing tape where the die to be picked up is located, and then the dicing tape may be fixed with the dome plate.

[0079] Furthermore, although the embodiment described an example in which a die attach film is used, it is also possible to provide a preform portion on the substrate for applying adhesive and not use a die attach film.

[0080] Furthermore, although the embodiment described a die bonder in which a die is picked up from a wafer supply unit with a pickup head and placed on an intermediate stage, and the die placed on the intermediate stage is bonded to a substrate with a bonding head, the invention is not limited to this and can be applied to a die bonding apparatus that picks up a die from a die supply unit.

[0081] For example, it can also be applied to die bonders that lack an intermediate stage and pickup head, and instead bond the die in the wafer supply section to the substrate using a bonding head.

[0082] Furthermore, it can be applied to flip-chip bonders that lack an intermediate stage, picking up dies from the wafer supply unit, rotating the die pickup head upwards to transfer the dies to the bonding head, and then bonding them to the substrate with the bonding head.

[0083] In this embodiment, a die bonder was used as an example, but it can also be applied to semiconductor manufacturing equipment that places picked-up dies onto a tray. [Explanation of symbols]

[0084] 1. Die bonder (semiconductor manufacturing equipment) 12. Wafer holder 13. Peeling Unit 131...Laser irradiation area 131a...Cavity 131c... Laser irradiation device D...Dai DT... Dicing Tape

Claims

1. A wafer holder formed from an adhesive sheet that peels off with laser light, which holds a dicing tape to which a die is attached, A peeling unit provided below the dicing tape, Equipped with, The peeling unit comprises a laser irradiation section having a cavity with an opening at the top and a laser irradiation device provided below the opening, The laser irradiation device is a semiconductor manufacturing apparatus provided such that the irradiation direction of the laser light irradiated from the laser irradiation device is inclined with respect to the normal direction of the surface of the dicing tape, and the laser light is irradiated onto the dicing tape through the aperture.

2. In the semiconductor manufacturing apparatus according to claim 1, further, A head is provided with a collet for adsorbing the die, A control device configured to keep the collet in a waiting position away from the die when the laser irradiation device irradiates the dicing tape with laser light, Semiconductor manufacturing equipment equipped with the following features.

3. In the semiconductor manufacturing apparatus according to claim 1, The laser irradiation apparatus is a semiconductor manufacturing apparatus having an optical system that performs trapezoidal processing on the irradiated laser light.

4. In the semiconductor manufacturing apparatus according to claim 1, The irradiation area of ​​the laser irradiation device is larger than the die. The peeling unit further comprises an irradiation range limiting component that limits the size of the aperture, in a semiconductor manufacturing apparatus.

5. In the semiconductor manufacturing apparatus of claim 4, The irradiation range limiting component has a first surface facing the dicing tape and a second surface facing the laser irradiation device, and the semiconductor manufacturing apparatus has a reflector on the second surface side that reflects the laser light from the laser irradiation device in a direction that does not reflect back to the laser irradiation device.

6. In the semiconductor manufacturing apparatus of claim 4, The aforementioned irradiation range limiting component is made of plastic and is used in semiconductor manufacturing equipment.

7. In the semiconductor manufacturing apparatus of claim 4, The irradiation range limiting component has a first surface facing the dicing tape and a second surface facing the laser irradiation device, and the first surface has a protrusion that contacts the dicing tape.

8. In the semiconductor manufacturing apparatus of claim 4, The aforementioned irradiation range limiting component is a semiconductor manufacturing apparatus with a cooling function.

9. In the semiconductor manufacturing apparatus of claim 4, The laser irradiation device is a semiconductor manufacturing apparatus in which the irradiation range of the laser light can be changed.

10. In the semiconductor manufacturing apparatus according to claim 1, Furthermore, the semiconductor manufacturing apparatus includes a control device configured to reduce the irradiation intensity of the laser irradiation device to a lower level than the initial irradiation level after a predetermined period has elapsed from the start of irradiation.

11. In the semiconductor manufacturing apparatus according to claim 1, The irradiation area of ​​the laser irradiation device is smaller than the die. The laser irradiation device is configured to scan the irradiation area, which is a semiconductor manufacturing apparatus.

12. In the semiconductor manufacturing apparatus of claim 11, further, Camera and, A semiconductor manufacturing apparatus comprising a control unit configured to recognize in advance, using the camera, the range over which the laser irradiation device scans the irradiation area.

13. In the semiconductor manufacturing apparatus of claim 12, The camera is a semiconductor manufacturing apparatus provided above the wafer holder.

14. In the semiconductor manufacturing apparatus of claim 12, The camera is a semiconductor manufacturing apparatus provided within the laser irradiation section.

15. In the semiconductor manufacturing apparatus of claim 11, Furthermore, the semiconductor manufacturing apparatus includes a control unit configured to irradiate the laser beam to be scanned in a dot pattern or an intermittent line pattern using the laser irradiation device.

16. A peeling unit is provided below the dicing tape, which is formed of an adhesive sheet that peels off with laser light and is used together with a wafer holder that holds a dicing tape to which a die is attached, The laser irradiation section comprises a cavity having an opening at the top and a laser irradiation device provided below the opening. The laser irradiation device is a peeling unit provided such that the irradiation direction of the laser light irradiated from the laser irradiation device is inclined with respect to the normal direction of the surface of the dicing tape, and the laser light is irradiated onto the dicing tape through the aperture.

17. A wafer ring holding a dicing tape, which is formed of an adhesive sheet that peels off with a laser beam and to which a die is attached, is placed in a semiconductor manufacturing apparatus, the apparatus comprising: a wafer holder that holds a dicing tape formed of an adhesive sheet that peels off with a laser beam and to which a die is attached; and a peeling unit provided below the dicing tape, wherein the peeling unit comprises a laser irradiation section having a cavity with an opening at the top and a laser irradiation device provided below the opening, and the laser irradiation device is provided such that the irradiation direction of the laser beam emitted from the laser irradiation device is inclined with respect to the direction normal to the surface of the dicing tape, and the laser beam is irradiated onto the dicing tape through the opening, and the wafer ring holding the dicing tape is placed in such a semiconductor manufacturing apparatus, A step of picking up a die from the dicing tape held by the wafer ring, A method for manufacturing a semiconductor device containing [a specific component].

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