probe

Abstract

To suppress diffusion of components in a probe to a solder.SOLUTION: A probe 100 includes Pd in the concentration of larger than 20 mass% to 60 mass%, Ag in the concentration of 3 mass% to less than 20 mass%, Ni in the concentration of 3 mass% to 50 mass%, and Cu in the concentration of 3 mass% to 74 mass%. Alternatively, the probe 100 includes Pd in the concentration of larger than 20 mass% to 60 mass%, Ag in the concentration of 20 mass% to 35 mass%, Ni in the concentration of 7 mass% to 50 mass%, and Cu in the concentration of 3 mass% to 53 mass%.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a probe.

Background Art

[0002] In order to inspect an object to be inspected such as an integrated circuit, the object to be inspected may be electrically connected to an inspection substrate through a probe provided in a socket. The probe may contain an alloy of Pd, Ag, and Cu.

[0003] Patent Document 1 describes an example of an alloy of Pd, Ag, and Cu. The alloy described in Patent Document 1 contains about 35% to about 59% of Pd, 4% or more of Ag, and 16% or more and 50% or less of Cu.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] An alloy of Pd, Ag, and Cu may be used as a material for forming a probe. However, when the tip of a probe containing an alloy of Pd, Ag, and Cu is repeatedly brought into contact with the solder of an object to be inspected for electrical connection, components such as Sn contained in the solder and components contained in the probe tend to diffuse into each other due to factors such as Joule heat. When the components contained in the probe diffuse, the tip of the probe may be worn out. When the tip of the probe is worn out, fluctuations in the contact resistance between the probe and the solder may occur. Therefore, when a probe containing an alloy of Pd, Ag, and Cu is used, the number of times of cleaning or replacement of the tip of the probe becomes relatively large, and the operating rate of the inspection process may decrease.

[0006] One example of the object of the present invention is to suppress the diffusion of components contained in the probe into the solder. Other objects of the present invention will become apparent from the description herein. [Means for solving the problem]

[0007] One aspect of the present invention is, Pd in ​​amounts exceeding 20% ​​by mass and 60% by mass or less, Ag in an amount of 3% by mass or more and less than 20% by mass, Ni in an amount of 3% to 50% by mass, Cu in an amount of 3% to 74% by mass, This is a probe that includes [something].

[0008] Another aspect of the present invention is, Pd in ​​amounts exceeding 20% ​​by mass and 60% by mass or less, Ag in an amount of 20% to 35% by mass, Ni in an amount of 7% to 50% by mass, Cu in an amount of 3% to 53% by mass, This is a probe that includes [something].

[0009] According to the above embodiment of the present invention, the diffusion of components contained in the probe into the solder can be suppressed. [Brief explanation of the drawing]

[0010] [Figure 1] This is a cross-sectional view of the socket according to the embodiment. [Figure 2] This is a cross-sectional view of the socket according to the first modified example. [Figure 3] This is a cross-sectional view of the probe according to a second modified example. [Modes for carrying out the invention]

[0011] Embodiments and modified examples of the present invention will be described below with reference to the drawings. In all drawings, similar components are denoted by the same reference numerals, and their descriptions are omitted where appropriate.

[0012] In this specification, ordinal numbers such as "1st," "2nd," and "3rd" are used simply to distinguish similarly named components, unless otherwise specified, and do not imply any specific characteristics of the components (e.g., order or importance).

[0013] Figure 1 is a cross-sectional view of a socket 10 according to an embodiment.

[0014] In Figure 1, the arrow indicated by "+Z" represents the upward direction in the vertical direction, and the arrow indicated by "-Z" represents the downward direction in the vertical direction. Hereafter, the direction perpendicular to the vertical direction will be referred to as the horizontal direction, as needed.

[0015] The socket 10 comprises a probe 100 and an insulating support 200. The probe 100 is provided in a through hole formed in the insulating support 200. The probe 100 has a first plunger 110, a second plunger 120, a tube 130, and a spring 140. Figure 1 shows the state in which the object to be inspected 20 is being inspected by the inspection board 30 using the probe 100. Specifically, in the state shown in Figure 1, the solder balls 22 of the object to be inspected 20 and the pads 32 of the inspection board 30 are electrically connected via the probe 100.

[0016] Tube 130 extends vertically. Spring 140 is located inside tube 130. Probe 100 may not have tube 130. Spring 140 is spirally wound around a virtual axis that passes vertically through the center of tube 130.

[0017] The first plunger 110 is positioned on the upper end side of the spring 140. The first plunger 110 is biased upward by the spring 140, that is, in a direction away from the second plunger 120. In a state where the inspection object 20 is being inspected by the inspection substrate 30, the first plunger 110 is connected to the inspection object 20 positioned above the probe 100. In this state, the tip, that is, the upper end of the first plunger 110 is in contact with the solder ball 22 of the inspection object 20. In the example shown in FIG. 1, the tip of the first plunger 110 has a plurality of sharp points arranged at equal intervals around a virtual axis passing vertically through the center of the first plunger 110. The shape of the tip of the first plunger 110 is not limited to the example shown in FIG. 1.

[0018] The second plunger 120 is positioned on the lower end side of the spring 140. The second plunger 120 is biased downward by the spring 140, that is, in a direction away from the first plunger 110. In a state where the inspection object 20 is being inspected by the inspection substrate 30, the second plunger 120 is connected to the inspection substrate 30 positioned below the probe 100. In this state, the tip, that is, the lower end of the second plunger 120 is in contact with the pad 32 of the inspection substrate 30. The tip of the second plunger 120 is hemispherical. The shape of the tip of the second plunger 120 is not limited to the example shown in FIG. 1.

[0019] In the first aspect, the first plunger 110 contains the material (A). The material (A) contains Pd of more than 20% by mass and 60% by mass or less, Ag of 3% by mass or more and less than 20% by mass, Ni of 3% by mass or more and 50% by mass or less, and Cu of 3% by mass or more and 74% by mass or less. For example, at least the surface of the first plunger 110 is made of the material (A). In this example, for example, the entire first plunger 110 may be formed of the material (A). Alternatively, the material (A) may cover the surface of the first plunger 110 by a process such as plating. When the material (A) covers the surface of the first plunger 110, the portion of the first plunger 110 covered by the material (A) may be formed of a material different from the material (A). Also, for example, at least the portion of the first plunger 110 that contacts the solder ball 22 may be made of the material (A). In this example, for example, the material (A) may cover only the surface of the portion of the first plunger 110 that contacts the solder ball 22 by a process such as plating.

[0020] The lower limit of the mass ratio of Pd contained in the material (A) is determined, for example, from the viewpoint of the corrosion resistance of the material (A). When the mass ratio of Pd contained in the material (A) is 20% by mass or less, the corrosion resistance of the material (A) may be insufficient. Therefore, the mass ratio of Pd contained in the material (A) can be more than 20% by mass. The mass ratio of Pd contained in the material (A) may be, for example, 22% by mass or more or 25% by mass or more.

[0021] The upper limit of the mass ratio of Pd contained in the material (A) is determined, for example, from the viewpoint of suppressing the diffusion between the components contained in the material (A) and the components contained in the solder such as the solder ball 22. When the mass ratio of Pd contained in the material (A) exceeds 60% by mass, it may be difficult to sufficiently suppress the diffusion between the components contained in the material (A) and the components contained in the solder. Therefore, the mass ratio of Pd contained in the material (A) can be 60% by mass or less. The mass ratio of Pd contained in the material (A) may be, for example, 55% by mass or less or 50% by mass or less.

[0022] The mass ratio of Pd contained in material (A) can be, for example, 22% by mass or more and 55% by mass or less. Alternatively, the mass ratio of Pd contained in material (A) can be, for example, 25% by mass or more and 50% by mass or less.

[0023] The lower limit of the mass ratio of Ag contained in material (A) is determined, for example, from the viewpoint of age hardening. Ag can improve the age hardening of material (A) when combined with Pd and Cu. If the mass ratio of Ag contained in material (A) is less than 3 mass%, the age hardening of material (A) may be insufficient. For this reason, the mass ratio of Ag contained in material (A) can be set to 3 mass% or more. The mass ratio of Ag contained in material (A) may be, for example, 4 mass% or more.

[0024] The upper limit of the mass ratio of Ag contained in material (A) is determined, for example, from the viewpoint of keeping the mass ratio of Ag contained in material (A) relatively low. For this reason, the mass ratio of Ag contained in material (A) can be less than 20% by mass. The mass ratio of Ag contained in material (A) may be, for example, 18% by mass or less.

[0025] The mass ratio of Ag contained in material (A) may be, for example, 4% by mass or more and 18% by mass or less.

[0026] The lower limit of the mass ratio of Ni contained in material (A) is determined, for example, from the viewpoint of the mass ratio of Ag contained in material (A) and from the viewpoint of suppressing the diffusion between the components contained in material (A) and the components contained in the solder such as the solder ball 22. In the first embodiment, the mass ratio of Ag contained in material (A) is relatively small, less than 20 mass%. In this case, when the mass ratio of Ni contained in material (A) is less than 3 mass%, it may be difficult to sufficiently suppress the diffusion between the components contained in material (A) and the components contained in the solder. For this reason, the mass ratio of Ni contained in material (A) can be set to 3 mass% or more. The mass ratio of Ni contained in material (A) may be, for example, 5 mass% or more or 7 mass% or more.

[0027] The upper limit of the Ni mass ratio in material (A) is determined, for example, from the perspective of plastic processing such as cold rolling and wire drawing of material (A). If the Ni mass ratio in material (A) exceeds 50% by mass, plastic processing such as cold rolling and wire drawing of material (A) may become difficult. For this reason, the Ni mass ratio in material (A) can be set to 50% by mass or less. The Ni mass ratio in material (A) may also be set to, for example, 40% by mass or less or 35% by mass or less.

[0028] The mass ratio of Ni contained in material (A) may be, for example, 5% by mass or more and 40% by mass or less. Alternatively, the mass ratio of Ni contained in material (A) may be, for example, 7% by mass or more and 35% by mass or less.

[0029] The lower limit of the mass ratio of Cu contained in material (A) is determined, for example, from the viewpoint of the hardness of material (A). The hardness of material (A) can be improved by alloying Pd and Cu. Also, the resistivity of Cu is relatively low. If the mass ratio of Cu contained in material (A) is less than 3 mass%, it may be difficult to ensure sufficient hardness of material (A). For this reason, the mass ratio of Cu contained in material (A) can be set to 3 mass% or more. The mass ratio of Cu contained in material (A) may be, for example, 5 mass% or more, 10 mass% or more, or 15 mass% or more.

[0030] The upper limit of the mass ratio of Cu contained in material (A) is determined, for example, from the viewpoint of the corrosion resistance of material (A). If the mass ratio of Cu contained in material (A) exceeds 74 mass%, it may become difficult to ensure sufficient corrosion resistance of material (A). For this reason, the mass ratio of Cu contained in material (A) can be 74 mass% or less. The mass ratio of Cu contained in material (A) may be, for example, 70 mass% or less, 60 mass% or less, or 50 mass% or less.

[0031] The mass ratio of Cu contained in material (A) may be, for example, 5% by mass or more and 70% by mass or less. Alternatively, the mass ratio of Cu contained in material (A) may be, for example, 10% by mass or more and 60% by mass or less. Alternatively, the mass ratio of Cu contained in material (A) may be, for example, 15% by mass or more and 50% by mass or less.

[0032] Material (A) may contain, in place of a portion of Cu, at least one of In, Sn, Zn, and Ga in a total amount of 0.2% by mass or more and 2.0% by mass or less.

[0033] The lower limit of the total mass ratio of at least one of In, Sn, Zn, and Ga contained in material (A) is determined, for example, from the viewpoint of the age hardening of material (A). When the total mass ratio of the at least one contained in material (A) is less than 0.2 mass%, the age hardening of material (A) is almost the same as the age hardening of material (A) that does not contain the at least one contained element. For this reason, the total mass ratio of the at least one contained in material (A) can be set to 0.2 mass% or more. The total mass ratio of the at least one contained in material (A) may be, for example, 0.3 mass% or more.

[0034] The upper limit of the total mass ratio of at least one of In, Sn, Zn, and Ga contained in material (A) is determined, for example, from the viewpoint of plastic processing such as cold rolling and wire drawing of material (A). If the total mass ratio of at least one of these contained in material (A) exceeds 2.0 mass%, plastic processing such as cold rolling and wire drawing of material (A) may become difficult. For this reason, the upper limit of the total mass ratio of at least one of these contained in material (A) can be set to 2.0 mass% or less. The total mass ratio of at least one of these contained in material (A) may also be set to, for example, 1.5 mass% or less.

[0035] The total mass ratio of at least one of In, Sn, Zn, and Ga contained in material (A) may be, for example, 0.3% by mass or more and 1.5% by mass or less.

[0036] In a second embodiment, the first plunger 110 includes material (B) instead of material (A). Material (B) includes Pd in ​​an amount greater than 20% by mass and less than or equal to 60% by mass, Ag in an amount between 20% by mass and less than or equal to 35% by mass, Ni in an amount between 7% by mass and less than or equal to 50% by mass, and Cu in an amount between 3% by mass and less than or equal to 53% by mass. For example, at least the surface of the first plunger 110 is made of material (B). In this example, for example, the entire first plunger 110 may be formed from material (B). Alternatively, material (B) may cover the surface of the first plunger 110 by a treatment such as plating. When material (B) covers the surface of the first plunger 110, the portion of the first plunger 110 covered by material (B) may be formed from a material different from material (B). Also, for example, at least the portion of the first plunger 110 that contacts the solder ball 22 may be made of material (B). In this example, for instance, material (B) may be used to cover only the surface of the portion of the first plunger 110 that comes into contact with the solder ball 22, through a treatment such as plating.

[0037] The lower limit of the mass ratio of Pd contained in material (B) is determined from the viewpoint of the corrosion resistance of material (B), for example, in the same way as the lower limit of the mass ratio of Pd contained in material (A). For this reason, the mass ratio of Pd contained in material (B) can be greater than 20% by mass. For example, the mass ratio of Pd contained in material (B) may be 22% by mass or more, or 25% by mass or more.

[0038] The upper limit of the mass ratio of Pd contained in material (B) is determined, for example, in the same way as the upper limit of the mass ratio of Pd contained in material (A), from the viewpoint of suppressing the diffusion between the components contained in material (B) and the components contained in the solder such as the solder ball 22. For this reason, the mass ratio of Pd contained in material (B) can be 60% by mass or less. The mass ratio of Pd contained in material (B) may also be, for example, 55% by mass or less or 50% by mass or less.

[0039] The mass ratio of Pd contained in material (B) may be, for example, 22% by mass or more and 55% by mass or less. Alternatively, the mass ratio of Pd contained in material (B) may be, for example, 25% by mass or more and 50% by mass or less.

[0040] The lower limit of the mass ratio of Ag contained in material (B) is determined, for example, from the viewpoint of ensuring a relatively high mass ratio of Ag in material (B). Therefore, the mass ratio of Ag in material (B) can exceed 20% by mass. For example, the mass ratio of Ag in material (B) may be 21% by mass or higher.

[0041] The upper limit of the mass ratio of Ag contained in material (B) is determined, for example, from the viewpoint of suppressing the diffusion between the components contained in material (B) and the components contained in the solder such as the solder ball 22. If the mass ratio of Ag contained in material (B) exceeds 35% by mass, it may become difficult to sufficiently suppress the diffusion between the components contained in material (B) and the components contained in the solder. For this reason, the mass ratio of Ag contained in material (B) can be 35% by mass or less. The mass ratio of Ag contained in material (B) may also be 33% by mass or less, for example.

[0042] The mass ratio of Ag contained in material (B) may be, for example, 21% by mass or more and 33% by mass or less.

[0043] The lower limit of the mass ratio of Ni contained in material (B) is determined, for example, from the viewpoint of the mass ratio of Ag contained in material (B) and from the viewpoint of suppressing the diffusion between the components contained in material (B) and the components contained in the solder such as the solder ball 22. In the second embodiment, the mass ratio of Ag contained in material (B) is relatively high, at 20% by mass or more. In this case, when the mass ratio of Ni contained in material (B) is less than 7% by mass, it may be difficult to sufficiently suppress the diffusion between the components contained in material (B) and the components contained in the solder. For this reason, the mass ratio of Ni contained in material (B) can be set to 7% by mass or more. The mass ratio of Ni contained in material (B) may be, for example, 8% by mass or more, 10% by mass or more, or 11% by mass or more.

[0044] The upper limit of the mass ratio of Ni contained in material (B) is determined, for example, in the same way as the upper limit of the mass ratio of Ni contained in material (A), from the perspective of plastic processing of material (B), such as cold rolling and wire drawing. For this reason, the mass ratio of Ni contained in material (B) can be 50% by mass or less. The mass ratio of Ni contained in material (B) may also be, for example, 40% by mass or less or 35% by mass or less.

[0045] The mass ratio of Ni contained in material (B) may be, for example, 8% by mass or more and 40% by mass or less. Alternatively, the mass ratio of Ni contained in material (B) may be, for example, 10% by mass or more and 35% by mass or less. Alternatively, the mass ratio of Ni contained in material (B) may be, for example, 11% by mass or more and 35% by mass or less.

[0046] The lower limit of the mass ratio of Cu contained in material (B) is determined from the viewpoint of the hardness of material (B), for example, in the same way as the lower limit of the mass ratio of Cu contained in material (A). For this reason, the mass ratio of Cu contained in material (B) can be 3% by mass or more. The mass ratio of Cu contained in material (B) may also be, for example, 5% by mass or more, or 10% by mass or more.

[0047] The upper limit of the mass ratio of Cu contained in material (B) is determined from the viewpoint of the corrosion resistance of material (B), for example, in the same way as the upper limit of the mass ratio of Cu contained in material (A). For this reason, the mass ratio of Cu contained in material (B) can be 53 mass% or less. The mass ratio of Cu contained in material (B) may also be, for example, 47 mass% or less or 40 mass% or less.

[0048] The mass ratio of Cu contained in material (B) may be, for example, 5% by mass or more and 47% by mass or less. Alternatively, the mass ratio of Cu contained in material (B) may be, for example, 10% by mass or more and 40% by mass or less.

[0049] Material (B) may contain, in place of a portion of Cu, a total of 0.2% by mass or more and 2.0% by mass or less of at least one of In, Sn, Zn, and Ga.

[0050] The lower limit of the total mass ratio of at least one of In, Sn, Zn, and Ga contained in material (B) is determined, for example, in the same way as the lower limit of the total mass ratio of at least one of In, Sn, Zn, and Ga contained in material (A), from the viewpoint of age hardening of material (B). For this reason, the total mass ratio of the said one contained in material (B) can be 0.2% by mass or more. The total mass ratio of the said one contained in material (B) may be, for example, 0.3% by mass or more.

[0051] The upper limit of the total mass ratio of at least one of In, Sn, Zn, and Ga contained in material (B) is determined, for example, in the same way as the upper limit of the total mass ratio of at least one of In, Sn, Zn, and Ga contained in material (A), from the viewpoint of plastic processing of material (B), such as cold rolling and wire drawing. For this reason, the upper limit of the total mass ratio of said at least one contained in material (B) can be 2.0 mass% or less. The total mass ratio of said at least one contained in material (B) may be, for example, 1.5 mass% or less.

[0052] The total mass ratio of at least one of In, Sn, Zn, and Ga contained in material (B) may be, for example, 0.3% by mass or more and 1.5% by mass or less.

[0053] Hereafter, as needed, an alloy consisting of Pd, Ag, and Cu without containing Ni will be referred to as a PdAgCu alloy.

[0054] In this embodiment, compared to the case where the first plunger 110 contains a PdAgCu alloy, the diffusion of components contained in the first plunger 110 into the solder ball 22 can be suppressed at the interface between the tip of the first plunger 110 and the surface of the solder ball 22. Furthermore, in this embodiment, compared to the case where the first plunger 110 contains a PdAgCu alloy, the diffusion of components contained in the first plunger 110 into the solder ball 22 is suppressed, thereby suppressing wear of the tip of the first plunger 110.

[0055] When material (A) is used, the reason why the diffusion of components contained in material (A) into the solder is suppressed compared to when a PdAgCu alloy is used is presumed to be as follows. That is, when material (A) and solder come into contact, a dense thin film containing a metal compound such as Sn-Ni is formed at the interface between material (A) and solder due to the Ni contained in material (A). When this metal compound is present at the interface between material (A) and solder, the diffusion of components contained in material (A) and solder is suppressed by this metal compound compared to when this metal compound is not present at the interface between material (A) and solder. In contrast, when a PdAgCu alloy is used, the above metal compound is less likely to form. Therefore, in this embodiment, compared to when the first plunger 110 contains a PdAgCu alloy, the diffusion of components contained in the first plunger 110 into the solder ball 22 can be suppressed between the tip of the first plunger 110 and the solder ball 22. Even when material (B) is used, for the same reasons as described above, the diffusion of components contained in material (B) into the solder can be suppressed compared to when PdAgCu alloy is used.

[0056] Material (A) or material (B) does not need to be as hard as existing PdAgCu alloys. However, as the number of inspections increases, the contact surface of the first plunger 110 may be mechanically crushed. For this reason, it is desirable that material (A) or material (B) be relatively hard. For example, the first plunger 110 can be used with a hardness of 200 HV or higher. In this embodiment, material (A) or material (B) can achieve a hardness of 250 HV or higher. Note that the hardness of material (A) or material (B) may be the hardness of the processed material after processing, or the hardness of the aged material after aging treatment.

[0057] Figure 2 is a cross-sectional view of the socket 10A according to the first modified example. The socket 10A according to this modified example is the same as the probe 100 according to the embodiment, except for the following points.

[0058] An extension portion 112A is provided at the lower end of the first plunger 110A, extending downward from the first plunger 110A. The first plunger 110A and the extension portion 112A are integrally formed. Therefore, both the first plunger 110A and the extension portion 112A contain material (A) or material (B). A tip head 114A is provided at the lower end of the extension portion 112A. The tip head 114A may or may not contain material (A) or material (B).

[0059] A base end portion 122A is provided at the upper end of the second plunger 120A. A hole 124A is formed on the upper surface of the base end portion 122A, opening upwards. A locking portion 126A is provided on a part of the inner wall of the base end portion 122A that defines the hole 124A. The horizontal diameter of the locking portion 126A in the hole 124A is narrower than the horizontal diameter of the portion of the hole 124A located below the locking portion 126A. The tip head 114A is recessed below the locking portion 126A in the hole 124A. The tip head 114A is also vertically movable below the locking portion 126A in the hole 124A. The horizontal diameter of the tip head 114A is larger than the horizontal diameter of the locking portion 126A in the hole 124A. Therefore, the locking portion 126A prevents the tip head 114A from coming out upwards from the hole 124A.

[0060] The probe 100A according to this modified example does not have a tube corresponding to the tube 130 of the probe 100 according to the embodiment. The spring 140A is located between the lower end of the first plunger 110A and the upper end of the base end 122A. The spring 140A is also spirally wound around the extension portion 112A. The first plunger 110A, the extension portion 112A and the tip head 114A are biased upward by the spring 140A. The second plunger 120A and the base end 122A are biased downward by the spring 140A.

[0061] Figure 3 is a cross-sectional view of probe 100B according to a second modified example. Probe 100B according to this modified example is the same as probe 100 according to the embodiment, except for the following points.

[0062] In the example shown in Figure 3, the first plunger 110B and the tube 130B are integrated. Therefore, both the first plunger 110B and the tube 130B contain material (A) or material (B). Furthermore, the first plunger 110B and the tube 130B are biased upward by the spring 140B, that is, away from the second plunger 120B. The second plunger 120B is biased downward by the spring 140B, that is, away from the first plunger 110B.

[0063] The embodiments and modifications of the present invention have been described above with reference to the drawings, but these are merely examples of the present invention, and various other configurations can also be adopted. [Examples]

[0064] One aspect of the present invention will be described based on examples and comparative examples. The present invention is not limited to the following examples.

[0065] Table 1 shows the composition (unit: mass%) of Pd, Ag, Ni, Cu, In, Sn, Zn, and Ga contained in each test material of Examples 1-20 and Comparative Examples 1-10. [Table 1]

[0066] The test materials for Examples 1-20 and Comparative Examples 1-10 were prepared as follows.

[0067] For Example 1, as shown in Table 1, a compound was obtained by blending 45% by mass of Pd, 3% by mass of Ag, 10% by mass of Ni, and 42% by mass of Cu. For each of Examples 2-20 and Comparative Examples 1-10, a compound was obtained by blending Pd, Ag, Ni, Cu, In, Sn, Zn, and Ga to the compositions shown in Table 1 for Examples 2-20 and Comparative Examples 1-10. Blank spaces in the composition column in Table 1 indicate that the corresponding metal was not included in the compound.

[0068] Next, for each of Examples 1 to 20 and Comparative Examples 1 to 10, the above formulations were melted by arc melting in an argon atmosphere to produce alloy ingots.

[0069] Next, for each of Examples 1 to 20 and Comparative Examples 1 to 10, sheet materials with a rolling ratio of 75% were produced by repeating the rolling and heat treatment of the above alloy ingots. The rolling ratio RR is determined according to the following formula (1), where t1 is the thickness of the alloy ingot before rolling and t2 is the thickness of the alloy ingot after rolling. RR = {(t1-t2) / t1} × 100 (1)

[0070] For Examples 1-20 and Comparative Examples 1-3, 5-8, and 10, we were able to produce sheet materials with a rolling ratio of 75%. In contrast, for Comparative Examples 4 and 9, we were unable to produce sheet materials with a rolling ratio of 75%. For Comparative Examples 4 and 9, the measurements described later using Table 2 were not performed.

[0071] Table 2 shows the measurement results for each of Examples 1-20 and Comparative Examples 1-3, 5-8, and 10, including the resistivity of the test material, the hardness of the processed material, the hardness of the aged material, and the thickness of the diffusion layer between the test material and the solder. [Table 2]

[0072] For each of Examples 1-20 and Comparative Examples 1-3, 5-8, and 10, the resistivity of the test material was measured by measuring the electrical resistance R of the test material at room temperature and calculating the resistivity ρ according to the following formula (2). ρ = RS / l (2) However, l is the measured length of the test material in the direction of current flow, and S is the cross-sectional area of ​​the test material perpendicular to the direction of current flow.

[0073] As shown in Table 2, the resistivity was 50 μΩ·cm or less in Examples 1-20 and Comparative Examples 1-3, 5-8, and 10. Therefore, it can be said that the resistivity required for the probe was obtained in Examples 1-20.

[0074] For each of Examples 1-20 and Comparative Examples 1-3, 5-8, and 10, the hardness of the processed material was measured using a micro-Vickers hardness tester by holding the center of the cross-section of the test material under a load of 200 gf for 10 seconds.

[0075] As shown in Table 2, the hardness of the processed material was 250 HV or higher in Examples 1-20 and Comparative Examples 1-3, 5-8, and 10. Therefore, it can be said that the hardness required for the probe was obtained in Examples 1-20.

[0076] For each of Examples 1-20 and Comparative Examples 1-3, 5-8, and 10, the aged hardness of the test material was measured as follows: First, each test material was aged at 300°C to 400°C for 1 hour. Then, the aged hardness of each test material was measured using a micro-Vickers hardness tester by holding the center of the cross-section of the test material under a load of 200 gf for 10 seconds.

[0077] As shown in Table 2, the hardness of the aged material in Examples 1-20 and Comparative Examples 1-3, 5-8, and 10 was 300 HV or higher. Therefore, it can be said that the hardness required for the probe was obtained in Examples 1-20.

[0078] For each of Examples 1-20 and Comparative Examples 1-3, 5-8, and 10, the thickness of the diffusion layer between the test material and the solder was measured as follows. First, Sn-Bi solder was placed on a test material measuring 10 mm × 10 mm × 0.5 mm thick. Next, with the Sn-Bi solder still on the test material, the test material and Si-Bi solder were heat-treated at 250°C in an N2 atmosphere for 1 hour to melt the solder on the test material. Then, the test material was embedded in resin to expose the cross-section containing both the test material and the solder. Next, an EPMA (Electron Probe Micro Analyzer) was used to perform a line analysis of the interface between the test material and the solder in a direction perpendicular to the surface of the test material on which the solder was placed. The diffusion layer was defined as a layer containing both Sn diffusing from the solder and Pd diffusing from the test material. The thickness of the diffusion layer was measured from the EPMA measurement results.

[0079] As shown in Table 2, in Comparative Examples 1-3, 5-8, and 10, the diffusion layer thickness was 200 μm or more. In contrast, in Examples 1-20, the diffusion layer thickness was less than 100 μm. Therefore, it can be said that in Examples 1-20, the diffusion of components contained in the test material into the solder was suppressed compared to Comparative Examples 1-3, 5-8, and 10.

[0080] As shown in Table 2, the test materials for Examples 1 to 20 were able to achieve the resistivity, workpiece hardness, and aged hardness required for probes, while suppressing the diffusion of components contained in the test materials into the solder, compared to the test materials for Comparative Examples 1 to 3, 5 to 8, and 10.

[0081] The following embodiments are provided according to this specification. (Aspect 1) Embodiment 1 is, Pd in ​​amounts exceeding 20% ​​by mass and 60% by mass or less, Ag in an amount of 3% by mass or more and less than 20% by mass, Ni in an amount of 3% to 50% by mass, Cu in an amount of 3% to 74% by mass, This is a probe that includes [something]. According to Embodiment 1, compared to the case where the probe does not contain Ni but contains an alloy of Pd, Ag, and Cu, the diffusion of components contained in the probe into the solder can be suppressed at the interface between the probe and the solder. (Aspect 2) Embodiment 2 is, The probe according to Embodiment 1, wherein a portion of the Cu is replaced with at least one of In, Sn, Zn, and Ga, in an amount of 0.2 mass% to 2.0 mass%. According to embodiment 2, compared to the case where the probe does not contain Ni but contains an alloy of Pd, Ag, and Cu, the diffusion of components contained in the probe into the solder can be suppressed at the interface between the probe and the solder. (Aspect 3) Embodiment 3 is, Pd in ​​amounts exceeding 20% ​​by mass and 60% by mass or less, Ag in an amount of 20% to 35% by mass, Ni in an amount of 7% to 50% by mass, Cu in an amount of 3% to 53% by mass, This is a probe that includes [something]. According to embodiment 3, compared to the case where the probe does not contain Ni but contains an alloy of Pd, Ag, and Cu, the diffusion of components contained in the probe into the solder can be suppressed at the interface between the probe and the solder. (Aspect 4) The probe according to embodiment 3, wherein a portion of the Cu is replaced with at least one of In, Sn, Zn, and Ga, in an amount of 0.2 mass% to 2.0 mass%. According to embodiment 4, compared to the case where the probe does not contain Ni but contains an alloy of Pd, Ag, and Cu, the diffusion of components contained in the probe into the solder can be suppressed at the interface between the probe and the solder. [Explanation of symbols]

[0082] 10, 10A socket 20. Items to be inspected 22 balls 30 Inspection boards 32 pads 100, 100A, 100B probes 110, 110A, 110B First Plunger 112A Extension part 114A Tip head 120, 120A, 120B Second Plunger 122A Proximal end 124A Hole 126A Locking part 130, 130B Tube 140, 140A, 140B springs 200 Insulating Support

Claims

1. Pd in ​​an amount exceeding 20% ​​by mass and 60% by mass or less, Ag in an amount of 3% by mass or more and less than 20% by mass, Ni in an amount of 3% to 50% by mass, Cu in an amount of 3% to 74% by mass, A probe containing an alloy made of the following materials.

2. The probe according to claim 1, wherein the alloy contains at least one of In, Sn, Zn, and Ga in an amount of 0.2 mass% to 2.0 mass% in place of a portion of Cu.

3. Pd in ​​an amount exceeding 20% ​​by mass and 60% by mass or less, Ag in an amount of 20% by mass or more and 35% by mass or less, Ni in an amount of 7% to 50% by mass, Cu in an amount of 3% by mass or more and 53% by mass or less, A probe containing an alloy made of the following materials.

4. The probe according to claim 3, wherein the alloy contains at least one of In, Sn, Zn, and Ga in an amount of 0.2 mass% to 2.0 mass% in place of a portion of Cu.

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