Magnetic sensor device

Abstract

To provide a magnetic sensor device with stable output characteristics.SOLUTION: A magnetic sensor device 1 includes: a supporting substrate 2 having a first surface 2A; a magnetic detection element 30; a protective film 20, which is a layered film that is disposed on the first surface 2A side and that has a first layer 21 of which a primary component is alumina and a second layer 22 of which a primary component is silica; and a wiring layer 4 that is disposed on the first surface 2A side and is situated at a position farther than the layered film from the supporting substrate 2 and extends along the first surface 2A. The magnetic detection element 30 is disposed inside the layered film.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] The present disclosure relates to a magnetic sensor device.

Background Art

[0002] A magnetic sensor device includes a magnetic detection element made of a magnetic material (see, for example, Patent Document 1). When an external force is applied to the magnetic material, the response to a magnetic field fluctuates due to the inverse magnetostrictive effect. In particular, a tunneling magnetoresistance effect element has excellent output characteristics with a large MR ratio, but its output characteristics are likely to fluctuate due to an external force.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The protective film surrounding the magnetic detection element is made of a material such as silica. In a magnetic sensor device, there is also one that conducts between the magnetic detection element and the outside by a wiring layer without bending instead of a bending bonding wire. However, the metal and silica constituting this wiring layer have significantly different linear expansion coefficients. Therefore, when a thermal stress occurs between the wiring layer and the magnetic detection element surrounded by silica due to a temperature change, the output characteristics of the magnetic detection element may fluctuate and the measurement accuracy of the magnetic sensor device may decrease.

[0005] The present disclosure has been made in view of such circumstances, and an object thereof is to provide a magnetic sensor device with stable output characteristics.

Means for Solving the Problems

[0006] A magnetic sensor device according to one aspect of the present disclosure includes a support substrate having a first surface, a magnetic detection element, a laminated film disposed on the first surface side and having a first layer mainly composed of alumina and a second layer mainly composed of silica, and a wiring layer disposed on the first surface side and distal to the support substrate from the laminated film, extending along the first surface, wherein the magnetic detection element is disposed inside the laminated film.

[0007] Alumina has a coefficient of linear expansion between the metal and silica that constitute the wiring layer. Therefore, by providing a first layer mainly composed of alumina in the laminated film in which the magnetic detection element is placed, the difference in the coefficient of linear expansion between the wiring layer and the second layer mainly composed of silica can be mitigated, and the thermal stress between the wiring layer and the magnetic detection element caused by temperature changes can be reduced. As a result, the output characteristics of the magnetic detection element become stable and the measurement accuracy of the magnetic sensor device is improved. Other materials may be used to provide the first layer, as long as they have a coefficient of linear expansion between the metal and silica, like alumina.

[0008] In the above embodiment, it is preferable that the magnetic detection element is not in contact with the boundary between the first layer and the second layer.

[0009] In this embodiment, the magnetic detection element is less susceptible to thermal stress compared to the case where it is in contact with the boundary between the first and second layers.

[0010] In the above embodiment, the magnetic detection element may be located inside the first layer or inside the second layer.

[0011] According to these embodiments, the magnetic detection element can be arranged so as not to be in contact with the boundary between the first layer and the second layer.

[0012] In the above embodiment, the wiring layer may be arranged so as not to overlap the magnetic detection element in the direction perpendicular to the first surface.

[0013] According to this embodiment, since the wiring layer is arranged so as not to overlap the magnetic detection element, thermal stress is less likely to occur between the wiring layer and the magnetic detection element.

[0014] In the above embodiment, the wiring layer may be arranged so as to partially overlap the magnetic detection element in the direction perpendicular to the first surface.

[0015] According to this embodiment, even if the wiring layer is arranged to partially overlap the magnetic detection element, the thermal stress between the wiring layer and the magnetic detection element can be reduced.

[0016] In the above embodiment, a sensor substrate may be further included, which is disposed between the first surface and the laminated film and fixed to the first surface.

[0017] According to this embodiment, since it includes a first layer mainly composed of alumina, which has excellent toughness, cracks are less likely to occur in the magnetic detection element even if there is an impact when fixing the sensor substrate to the support substrate.

[0018] In the above embodiment, the wiring layer may be arranged so as to partially overlap the sensor substrate in the direction perpendicular to the first surface.

[0019] According to this embodiment, the sensor board and the support board, which are prepared separately, can be electrically connected.

[0020] In the above embodiment, the angle sensor may be equipped with a magnetic sensor device, the magnetic compass may be equipped with a magnetic sensor device, the current sensor may be equipped with a magnetic sensor device, and the autofocus mechanism and / or optical image stabilization mechanism of the camera module may be equipped with a magnetic sensor device.

[0021] According to these embodiments, magnetic sensor devices can be applied to various purposes. [Effects of the Invention]

[0022] According to this disclosure, it is possible to provide a magnetic sensor device with stable output characteristics. [Brief explanation of the drawing]

[0023] [Figure 1]FIG. 1 is a perspective view showing a magnetic sensor device according to an embodiment. [Figure 2] FIG. 2 is a cross-sectional view schematically showing an example of the internal structure of the magnetic sensor device shown in FIG. 1. [Figure 3] FIG. 3 is a cross-sectional view showing another example of the internal structure of the magnetic sensor device shown in FIG. 1. [Figure 4] FIG. 4 is a perspective view for explaining the manufacturing process of the magnetic sensor device shown in FIG. 1. [Figure 5] FIG. 5 is a plan view showing an example of a magnetic sensor device configured as a magnetic compass. [Figure 6] FIG. 6 is a perspective view showing an example of a magnetic sensor device used as part of an autofocus mechanism and an optical shake correction mechanism of a camera module. [Figure 7] FIG. 7 is a cross-sectional view showing the internal structure of the camera module shown in FIG. 6. [Figure 8] FIG. 8 is a view showing an example of a magnetic sensor device configured as an angle sensor. [Figure 9] FIG. 9 is a view showing an example of a magnetic sensor device used as part of a current sensor. [Figure 10] FIG. 10 is a view showing the circuit configuration of the current sensor shown in FIG. 9. [Figure 11] FIG. 11 is a cross-sectional view showing a first example of the configuration of the protective film shown in FIG. 2. [Figure 12] FIG. 12 is a cross-sectional view showing a second example of the configuration of the protective film shown in FIG. 2. [Figure 13] FIG. 13 is a cross-sectional view showing a third example of the configuration of the protective film shown in FIG. 2. [Figure 14] FIG. 14 is a cross-sectional view showing a fourth example of the configuration of the protective film shown in FIG. 2. [Figure 15] FIG. 15 is a cross-sectional view showing the configuration of a protective film that is not a laminated film of the present disclosure, shown for comparison with FIGS. 11 to 14. [Figure 16]Figure 16 shows the relationship between the structure of the protective film and the angular error, as shown in Figures 11, 13, 14, and 15. [Modes for carrying out the invention]

[0024] A preferred embodiment will be described with reference to the attached drawings. In each figure, components with the same reference numerals have the same or similar configuration. Figure 1 is a perspective view showing a magnetic sensor device 1 according to one embodiment. In the illustrated example, the magnetic sensor device 1 includes a support substrate 2, a sensor chip 3, a wiring layer 4, a sealing resin 5, electrodes 6, etc.

[0025] As shown in Figure 1, the support substrate 2 is formed in a flat plate shape having a first surface 2A and a second surface 2B opposite to the first surface 2A. In the following description, the thickness direction of the support substrate 2 is referred to as the perpendicular direction Z or the vertical direction Z, the direction from the second surface 2B to the first surface 2A is referred to as upward, and the direction from the first surface 2A to the second surface 2B is referred to as downward. The first surface 2A extends parallel to the XY plane which is perpendicular to the perpendicular direction Z.

[0026] Figure 2 is a schematic cross-sectional view showing an example of the internal structure of the magnetic sensor device 1 shown in Figure 1. In the illustrated example, the support substrate 2 is an ASIC (Application Specific Integrated Circuit), and electrodes 2E electrically connected to the wiring layer 4 are provided on the first surface 2A. The support substrate 2 is not limited to an ASIC and may be a silicon substrate or a sapphire substrate. It may also be an interposer, which is a relay substrate with only wiring formed on it and does not contain an integrated circuit.

[0027] As shown in Figure 2, the sensor chip 3 is fixed to the first surface 2A of the support substrate 2 with adhesive. The sensor chip 3 comprises a sensor substrate 10, a magnetic detection element 30 provided on the sensor substrate 10, a protective film 20 surrounding the magnetic detection element 30, etc. The sensor substrate 10 is, for example, a silicon substrate and is positioned between the first surface 2A of the support substrate 2 and the protective film 20. The configuration of the magnetic sensor device 1 is not limited to the illustrated example, and the sensor substrate 10 may be omitted, and the support substrate 2 and the magnetic detection element 30 may be constructed as a monolithic structure by photolithography.

[0028] The wiring layer 4 is located on the first surface 2A side of the support substrate 2 and extends parallel to the first surface 2A of the support substrate 2. The wiring layer 4 is distal to the support substrate 2 than the protective film 20 and electrically connects the electrode 2E of the support substrate 2 and the electrode 3E provided on the upper surface 3A of the sensor chip 3 via a plurality of vias 40 extending in the direction perpendicular to the surface Z.

[0029] The sealing resin 5 is positioned on the first surface 2A side of the support substrate 2 and covers the sensor chip 3 and the wiring layer 4. The electrodes 6 are, for example, solder balls or copper pillars, and are electrically connected to the wiring layer 4 and exposed from the sealing resin 5.

[0030] Figure 3 is a cross-sectional view showing another example of the internal structure of the magnetic sensor device 1 shown in Figure 1. In the illustrated example, the magnetic sensor device 1 comprises a plurality of sensor chips 3 (a first sensor chip 31 and a second sensor chip 32), and each sensor chip 3 comprises a plurality of magnetic detection elements 30.

[0031] An example of a magnetic detection element 30 is a TMR (Tunnel Magnetoresistance Effect) element. The magnetic detection element 30 is not limited to a TMR element, but may also be a GMR (Giant Magnetoresistance Effect) element, an AMR (Anisotropic Magnetoresistance Effect) element, a Hall element, or any other type of magnetic detection element. Compared to other types of MR elements, TMR elements have a smaller junction area, allowing for miniaturization of the sensor chip 3, and have a larger MR ratio, enabling a higher output from the sensor chip 3, making them particularly suitable for use as a magnetic detection element 30.

[0032] As shown in Figure 3, the sealing resin 5 is composed of multiple resin layers 51, 52, and 53 that are laminated and extend parallel to the first surface 2A of the support substrate 2. The wiring layer 4 is, for example, a copper plating provided on the upper surface of the resin layers 51 and 52, and extends along the first surface 2A of the support substrate 2. In the illustrated example, the wiring layer 4 includes a first wiring layer 41 provided on the upper surface of the resin layer 51, a second wiring layer 42 provided on the upper surface of the resin layer 52, and so on.

[0033] The wiring layer 4 is arranged so as to partially overlap the sensor substrate 10 in the direction perpendicular to the plane Z, and is electrically connected to the sensor chip 3. In the illustrated example, the first wiring layer 41, which constitutes a part of the wiring layer 4, is electrically connected to the electrode 3E of the first sensor chip 31 via a via 40 that penetrates the resin layer 51.

[0034] The wiring layer 4 may be arranged so as to partially overlap the magnetic detection element in the direction perpendicular to the plane Z, or it may be arranged so as not to overlap the magnetic detection element in the direction perpendicular to the plane Z. In the illustrated example, the first wiring layer 41 extends in the left-right direction X so as to partially overlap the magnetic detection element 30 of the first sensor chip 31. On the other hand, the second wiring layer 42 extends in the front-back direction Y so as not to overlap the magnetic detection element 30 of the second sensor chip 32.

[0035] Figure 4 is a perspective view illustrating the manufacturing process of the magnetic sensor device 1 shown in Figure 1. As shown in Figure 4(A), the sensor chip 3 is fixed to the first surface 2A of the support substrate 2 with an adhesive or the like. As shown in Figure 4(B), a resin layer (first resin layer) 51 is formed to cover the sensor chip 3 and the first surface 2A of the support substrate 2, and through holes 40P for vias 40 (see Figure 3) are opened at the positions of electrodes 2E and 3E (see Figure 3).

[0036] As shown in Figure 4(C), a seed layer is formed by sputtering or the like, and vias 40 and a first wiring layer 41 are formed by plating. These processes may be subtractive or additive. As shown in Figure 4(D), a resin layer (second resin layer) 52 is formed to cover the vias 40, the first wiring layer 41, and the resin layer 51, and through holes 40P for the vias 40 are opened.

[0037] As shown in Figure 4(E), vias 40 and a second wiring layer 42 are formed by the same process as in Figure 4(C). As shown in Figure 4(F), a resin layer (third resin layer) 53 is formed to cover vias 40, a second wiring layer 42, and a resin layer 52, and a through hole 6P for the electrode 6 is opened. As shown in Figure 4(G), the electrode 6 is formed by filling the through hole 6P with solder or the like. By following the procedure shown in Figures 4(A) to (G), the separately prepared support substrate 2 and sensor chip 3 can be electrically connected to obtain the magnetic sensor device 1 shown in Figure 1.

[0038] The magnetic sensor device 1 of this disclosure may be used as a magnetic compass mounted on electronic equipment such as information equipment to detect the Earth's magnetic field, or as part of the autofocus mechanism or optical image stabilization mechanism of a camera module, or as an angle sensor to detect the angle that the magnetic field generated from a magnet makes with respect to a reference direction, or as part of a current sensor to detect the value of the current flowing through a busbar.

[0039] Figure 5 shows an example of a magnetic sensor device 1 configured as a magnetic compass that generates detected values ​​corresponding to the angle of the Earth's magnetic field. As shown in Figure 5, the magnetic sensor device 1 is equipped with three sensor chips 3 (first to third sensor chips 31, 32, and 33), and is configured so that the first to third sensor chips 31, 32, and 33 each detect the components of the external magnetic field in three mutually orthogonal directions.

[0040] Figure 6 is a perspective view showing an example of a magnetic sensor device 1 used as part of the autofocus mechanism and optical image stabilization mechanism of the camera module 200. Figure 7 is a cross-sectional view showing the internal structure of the camera module 200 shown in Figure 6. The autofocus mechanism and optical image stabilization mechanism of the camera module 200 include a drive device 230 that moves the lens 220, and the drive device 230 is controlled based on the position information of the lens 220 detected by a plurality of magnetic sensor devices 1.

[0041] More specifically, the autofocus mechanism detects when the subject is in focus using an image sensor or autofocus sensor, and moves the lens in the Z direction relative to the image sensor. The optical image stabilization mechanism detects camera shake using a gyro sensor, and moves the lens in the U and / or V directions relative to the image sensor.

[0042] The camera module 200 shown in Figure 6 includes an image sensor 210 such as a CMOS, a lens 220 aligned with the image sensor 210, a first holding member 241 movable in the U and V directions relative to the image sensor 210, a second holding member 242 movable in the Z direction relative to the first holding member 241, a plurality of elastically deformable wires 244 supporting the first and second holding members 241 and 242, a drive device 230 for moving the first and second holding members 241 and 242, and a housing 250 for housing them.

[0043] The autofocus mechanism and optical image stabilization mechanism of the camera module 200 include a drive unit 230, multiple magnetic sensor devices 1, a processor that controls the drive unit 230, an autofocus sensor that detects when the subject is in focus, a gyro sensor that detects camera shake, and the like. The processor, autofocus sensor, gyro sensor, and the like (not shown) are located outside the housing.

[0044] The lens 220 is fixed inside a cylindrical second retaining member 242. The second retaining member 242, along with the lens 220, is housed in a box-shaped first retaining member 241. At least one second magnet 243 is fixed to the second retaining member 242 so that at least one magnetic sensor device 1 can detect the position information of the second retaining member 242.

[0045] The drive unit 230 includes a plurality of first coils 231, a plurality of second coils 232, a plurality of first magnets 233, etc. A plurality of first coils 231 are fixed to the housing 250. A plurality of second coils 232 are fixed to the second holding member 242. A plurality of first magnets 233 are fixed to the first holding member 241. Each of the plurality of first coils 231 faces the corresponding first magnet 233. Each of the plurality of second coils 232 faces the corresponding first magnet 233.

[0046] In the case of an autofocus mechanism, when current flows through any second coil 232 in response to a command from the processor, the interaction between the magnetic field generated by the first magnet 233 and the magnetic field generated by the second coil 232 causes the second retaining member 242, which is fixed to the second coil 232, to move in the Z direction. At least one magnetic sensor device 1 generates a detection signal based on the combined magnetic field obtained by combining the magnetic field generated by at least one second magnet 243 fixed to the second retaining member 242 and the magnetic field generated by the first magnet 233 fixed to the first retaining member 241, and transmits it to the processor. The processor detects the position information of the lens 220 in the Z direction from the detection signal and controls the drive device 230 so that it focuses on the subject.

[0047] In the case of an optical image stabilization mechanism, when current flows through any first coil 231 in response to a command from the processor, the interaction between the magnetic field generated by the first magnet 233 and the magnetic field generated by the first coil 231 causes the first holding member 241, which is fixed to the first magnet 233, to move in the U and / or V directions. Each of the multiple magnetic sensor devices 1 generates a detection signal based on the position of the corresponding first magnet 233 and transmits it to the processor. The processor detects the position information of the lens 220 in the U and V directions from the detection signal and controls the drive device 230 to correct camera shake.

[0048] Figure 8 shows an example of a magnetic sensor device 1 configured as an angle sensor that generates a detection value corresponding to the angle to be detected. In the illustrated example, the magnetic sensor device 1 is configured as an angle sensor that detects the angle of a magnet 300 that can rotate around the central axis O of a cylinder as its axis of rotation. In the illustrated example, the X, Y, and Z directions are orthogonal to each other, and the central axis O is parallel to the Z direction.

[0049] The magnetic sensor device 1 detects a first component of the magnetic field component MF generated by the magnet 300 that is applied to the magnetic sensor device 1, in a direction parallel to the X direction, and generates a first detection signal representing the intensity of the first component. It also detects a second component of the magnetic field generated by the magnet 300 that is parallel to the Y direction, and generates a second detection signal representing the intensity of the second component. A processor (not shown) calculates the angle θ that the magnetic field generated by the magnet 300 makes with respect to the reference direction DR by calculating the arctangent of the ratio of the first detection signal and the second detection signal.

[0050] Figure 9 shows an example of a magnetic sensor device 1 used as part of a current sensor 400 that generates a detection value corresponding to the current value to be detected. In the illustrated example, the current sensor 400 is configured to detect the value of the current Itg flowing through the busbar 410. A magnetic field MF is generated around the busbar 410 by the current Itg. The current sensor 400 is positioned near the busbar 410 at a location where the magnetic field MF is applied.

[0051] Figure 10 shows the circuit configuration of the current sensor 400 shown in Figure 9. In the illustrated example, the current sensor 400 is configured as a magnetic balance type current sensor. The current sensor 400 includes a coil 420 in addition to the magnetic sensor device 1. The coil 420 is for generating a second magnetic field MF2 that cancels out the first magnetic field MF1 of the magnetic field MF. The magnetic sensor device 1 detects the magnetic field of the residual difference between the first magnetic field MF1 and the second magnetic field MF2 and generates a magnetic field detection value S corresponding to the strength of the magnetic field.

[0052] The current sensor 400 further includes a feedback circuit 430, a current detector 440, and the like. The feedback circuit 430 supplies a feedback current to the coil 420 to generate a second magnetic field MF2 based on the detected magnetic field value S. The current detector 440 detects the value of the feedback current flowing through the coil 420. The current detector 440 is, for example, a resistor inserted in the current path of the feedback current. In this case, the potential difference across the resistor corresponds to the detected value of the feedback current. Since the detected value of the feedback current is proportional to the value of the current Itg in the busbar 410, the value of the current Itg can be detected from the detected value of the feedback current.

[0053] Next, the protective film 20 of the magnetic sensor device 1 according to this embodiment will be described with reference to Figures 11 to 16. One of the features of the magnetic sensor device 1 according to this embodiment is that the protective film 20 is a laminated film having a first layer 21 mainly composed of alumina and a second layer 22 mainly composed of silica.

[0054] The first layer 21 and the second layer 22 constituting the protective film 20 are stacked in the direction Z perpendicular to the plane. As will be described in detail later, the protective film 20 may include multiple first layers 21 or multiple second layers 22. The magnetic detection element 30 is disposed inside the stacked protective film 20.

[0055] Although it varies depending on the temperature range and measurement method, the linear expansion coefficient of alumina (aluminum oxide, Al2O3) is, for example, 7.7 ppm / K, the linear expansion coefficient of silica (silicon dioxide, SiO2) is, for example, 0.7 ppm / K, and the linear expansion coefficient of copper (Cu) is, for example, 17 ppm / K. Alumina, the main component of the first layer 21, has a linear expansion coefficient that is lower than that of metals such as copper that make up the wiring layer 4, and higher than that of silica, the main component of the second layer 22, and is approximately intermediate between that of metals and silica.

[0056] Figures 11 to 14 are cross-sectional views showing several configuration examples of the protective film 20 shown in Figure 2. In the first example shown in Figure 4, the protective film 20 is configured as a two-layer laminated film in which the second layer 22 (a layer mainly composed of silica) and the first layer 21 (a layer mainly composed of alumina) are stacked in that order from the side closest to the first surface 2A of the support substrate 2. In the first example, the magnetic detection element 30 is located inside the first layer 21.

[0057] In the second example shown in Figure 12, the protective film 20 is configured as a two-layer laminated film, with the second layer 22 (a layer mainly composed of silica) and the first layer 21 (a layer mainly composed of alumina) stacked in that order from the side closest to the first surface 2A of the support substrate 2. In the second example, the magnetic detection element 30 is located inside the second layer 22.

[0058] In the third example shown in Figure 13 and the fourth example shown in Figure 14, the protective film 20 is configured as a three-layer laminated film, with the layers stacked in the following order from the side closest to the first surface 2A of the support substrate 2: second layer 22A (a layer mainly composed of silica), first layer 21 (a layer mainly composed of alumina), and second layer 22B (a layer mainly composed of silica). In the third example, the magnetic detection element 30 is located inside the first layer 21. In the fourth example, the magnetic detection element 30 is located in contact with the boundary between the first layer 21 and the second layer 22.

[0059] Figure 15 is a cross-sectional view showing the structure of a non-laminated protective film 120, shown for comparison with Figures 11 to 14. In the example shown in Figure 15, the protective film 120 is not a laminated film of a first layer 21 mainly composed of alumina and a second layer 22 mainly composed of silica, but is composed only of a second layer 22 mainly composed of silica.

[0060] As shown in Figures 11, 13, 14, and 15, the thickness of the protective film 20 in the direction Z perpendicular to the surface is T0, the thickness of the first layer 21 is T1, the thickness of the second layer 22 (22A) provided on the upper surface 3A of the sensor substrate 10 is T2, and the thickness of the second layer 22 (22B) provided on the upper surface of the first layer 21 is T3. The distance from the upper surface 3A of the sensor substrate 10 to the magnetic detection element 30 is Tm, and the distance from the upper surface of the protective film 20 to the lower surface of the wiring layer 4 (thickness of the sealing resin 5) is Tr. T0 = T1 + T2 + T3.

[0061] Figure 16 is a graph showing the angular error of a magnetic sensor device 1 having a protective film 20, which is the subject of this disclosure, and the angular error of a magnetic sensor device 101 having a protective film 120, which is not the subject of this disclosure and is a comparative example. The protective film 20, which is the subject of this disclosure, includes the configuration examples shown in Figures 11, 13, and 14. The protective film 120, which is a comparative example, includes the configuration of the protective film 120 shown in Figure 15.

[0062] In Figure 16, with T0=15μm, Tm=7μm, and T2=1μm, the horizontal axis represents the thickness T1 of the first layer 21, which is mainly composed of alumina, and the vertical axis represents the angular error of the magnetic sensor device 1 equipped with the protective film 20 covered by this disclosure and the magnetic sensor device 101 equipped with a protective film 120 not covered by this disclosure. The simulation results are plotted when a predetermined stress value is applied to the magnetic sensor device 1 and 101, with the distance Tr from the upper surface of the protective film 20 and 120 to the lower surface of the wiring layer 4 being varied in five patterns: Tr=1μm, 10μm, 20μm, 30μm, and 40μm.

[0063] The plot on the horizontal axis for T1=0μm shows a comparative example, in which the protective film 120 is composed only of the second layer 22, which is mainly composed of silica. The other plots for T1, i.e., plots where T1 is 1μm or more, show results using the protective film 20 that is the subject of this disclosure. For T1=1~5μm, the magnetic detection element 30 is placed inside the second layer 22, which is mainly composed of silica. For T1=6μm, the magnetic detection element 30 is placed so as to be in contact with the boundary between the first and second layers. For T1=7~14μm, the magnetic detection element 30 is placed inside the first layer 21, which is mainly composed of alumina.

[0064] As shown in Figure 16, the angular error of the magnetic sensor device 1 tends to decrease as the thickness T1 of the first layer 21, which is mainly composed of alumina, increases. Also, the angular error of the magnetic sensor device 1 tends to decrease as the distance Tr from the upper surface of the protective film 20 to the lower surface of the wiring layer 4 increases.

[0065] By providing a first layer 21, mainly composed of alumina, in the protective film 20 surrounding the magnetic detection element 30, the angular error can be reduced in many cases compared to the case where T1 = 0 μm and no such layer is provided. The magnetic detection element 30 may be placed inside the first layer 21, such as when T1 = 7 to 14 μm, or it may be placed inside the second layer 22, such as when T1 = 1 to 5 μm. Placing the magnetic detection element 30 inside the first layer 21 can further reduce the angular error.

[0066] More specifically, when T1 = 1 to 5 μm or T1 = 12 to 14 μm, all five patterns of Tr = 1 μm, 10 μm, 20 μm, 30 μm, and 40 μm can reduce the angular error compared to the case where T1 = 0 μm. When T1 = 10 μm, four patterns of Tr = 1 μm, 10 μm, 20 μm, and 30 μm (excluding Tr = 40 μm) can reduce the angular error compared to the case where T1 = 0 μm. When T1 = 5.5 μm or T1 = 6.5 μm to 8 μm, three patterns of Tr = 1 μm, 10 μm, and 20 μm (excluding Tr = 30 μm and 40 μm) can reduce the angular error compared to the case where T1 = 0 μm.

[0067] When the magnetic detection element 30 is in contact with the boundary 23 between the first layer 21 and the second layer 22, such as T1=6μm, the angular error is larger than when T1=1~5μm and 7~14μm, where the magnetic detection element 30 is not in contact with the boundary 23 between the first layer 21 and the second layer 22. It is preferable that the magnetic detection element 30 is not in contact with the boundary 23 between the first layer 21 and the second layer 22. However, even when the magnetic detection element 30 is in contact with the boundary 23 between the first layer 21 and the second layer 22, the angular error can be reduced compared to T1=0μm in the two patterns Tr=1μm and 10μm.

[0068] As described above, the magnetic sensor device 1 has a first layer 21 mainly composed of alumina in the protective film 20 surrounding the magnetic detection element 30, which mitigates the difference in the coefficient of linear expansion between the wiring layer 4 and the second layer 22 mainly composed of silica. This reduces the thermal stress between the wiring layer 4 and the magnetic detection element 30 caused by temperature changes, thus stabilizing the output characteristics of the magnetic detection element 30 of the magnetic sensor device 1. For example, when the magnetic sensor device 1 is configured as an angle sensor, the angle error can be reduced as shown in Figure 14.

[0069] Because the first layer 21, which is mainly composed of alumina (which has a higher thermal conductivity than silica), is provided, the heat generated by the magnetic sensor device 1 can be efficiently dissipated, making it less susceptible to temperature changes. As mentioned above, the thermal stress caused by temperature changes is also small, so it can be used over a wide temperature range.

[0070] Because a first layer 21, mainly composed of alumina which has superior toughness to silica, is provided, cracks are less likely to occur in the magnetic detection element 30 even if there is an impact when fixing the sensor substrate 10 to the support substrate 2, improving the product yield. Thus, according to this disclosure, a magnetic sensor device 1 with excellent output characteristics and various other characteristics can be provided.

[0071] The embodiments described above are provided to facilitate understanding of this disclosure and are not intended to limit it. The elements of the embodiments, as well as their arrangement, materials, conditions, shapes, and sizes, are not limited to those exemplified and can be modified as appropriate. Furthermore, configurations shown in different embodiments can be partially substituted or combined. [Explanation of Symbols]

[0072] 1…Magnetic sensor device, 2…Support substrate, 2A…First surface, 2B…Second surface, 2E…Electrode, 3…Sensor chip, 3A…Top surface, 3E…Electrode, 4…Wiring layer, 5…Sealing resin, 6…Electrode, 6P…Through hole, 10…Sensor substrate, 20…Protective film (example of laminated film), 21…First layer (layer mainly composed of alumina), 22,22A,22B…Second layer (layer mainly composed of silica), 23…Boundary, 30…Magnetic detection element, 31…First sensor chip, 32…Second sensor chip, 33…Third sensor chip, 40…Via, 40P…Through hole, 41…First wiring layer, 42…Second wiring layer, 51~53…Resin layer, 101…Comparative example magnetic sensor device, 120…Comparative example protective film, 200…Camera module 440…Current sensor, 210…Image sensor, 220…Lens, 230…Drive unit, 231…First coil, 232…Second coil, 233…First magnet, 241…First holding member, 242…Second holding member, 243…Second magnet, 244…Wire, 250…Housing, 300…Magnet, 400…Current sensor, 410…Busbar, 420…Coil, 430…Feedback circuit, 440…Current detector 440, DR…Reference direction, Itg…Current, MF…Magnetic field, MF1…First magnetic field, MF2…Second magnetic field, O…Central axis, S…Magnetic field detection value, U,V…Direction of hand shake, X…Left-right direction (an example of a direction along the first plane), Y…Front-back direction (another example of a direction along the first plane), Z…Direction perpendicular to the plane, θ…Angle.

Claims

1. A support substrate having a first surface, Magnetic detection element and A laminated film having a first layer mainly composed of alumina and a second layer mainly composed of silica, arranged on the first surface side, The wiring layer is disposed on the first surface side, is distal to the support substrate than the laminated film, and extends along the first surface, The first layer is disposed between the second layer and the wiring layer, The magnetic detection element is disposed inside the laminated film. Magnetic sensor device.

2. The magnetic detection element is not in contact with the boundary between the first layer and the second layer. The magnetic sensor device according to claim 1.

3. The magnetic detection element is disposed inside the first layer. The magnetic sensor device according to claim 1.

4. The magnetic detection element is disposed inside the second layer. The magnetic sensor device according to claim 1.

5. The wiring layer is arranged so as not to overlap the magnetic detection element in the direction perpendicular to the first surface. The magnetic sensor device according to claim 1.

6. The wiring layer is arranged so as to partially overlap the magnetic detection element in the direction perpendicular to the first surface. The magnetic sensor device according to claim 1.

7. The system further includes a sensor substrate disposed between the first surface and the laminated film and fixed to the first surface. The magnetic sensor device according to claim 1.

8. The wiring layer is arranged so as to partially overlap the sensor substrate in the direction perpendicular to the first surface. The magnetic sensor device according to claim 7.

9. A magnetic sensor device as described in claim 1, Angle sensor.

10. A magnetic sensor device as described in claim 1, Magnetic compass.

11. A magnetic sensor device as described in claim 1, Current sensor.

12. The autofocus mechanism and / or optical image stabilization mechanism comprising the magnetic sensor device described in claim 1, Camera module.

Images