Function panel

Abstract

To provide a new functional panel that is superior in convenience or reliability.SOLUTION: In a functional panel including a first pixel, the first pixel comprises a first element, a color conversion layer and a first functional layer. The first element holds the first functional layer between itself and the color conversion layer. The first element includes a function for emitting light. The first element contains gallium nitride. The color conversion layer includes a function for converting the color of the light emitted by the first element, into a different color. The first functional layer comprises a first insulation film and a pixel circuit. The first insulation film includes a region sandwiched between the pixel circuit and the first element. The first insulation film has an opening. The pixel circuit comprises a first transistor. The first transistor includes a first oxide semiconductor film. The first transistor is electrically connected to the first element, at the opening.SELECTED DRAWING: Figure 4

Description

Technical Field

[0001] One aspect of the present invention relates to a functional panel, a display device, an input / output device, an information processing device, or a semiconductor device and.

[0002] Note that one aspect of the present invention is not limited to the above technical field. The technical field of one aspect of the invention disclosed in this specification and the like relates to an object, a method, or a manufacturing method. Alternatively, one aspect of the present invention relates to a process, a machine, a manufacture, or a composition (composition· of matter). Therefore, more specifically, examples of the technical field of one aspect of the present invention disclosed in this specification include a semiconductor device, a display device, a light-emitting device, a power storage device, a storage device, their driving methods, or their manufacturing methods.

Background Art

[0003] Displays with small chromaticity changes in micro light-emitting diodes with respect to current density are known (Patent Document 1). Specifically, each of a plurality of pixels includes a display element and a microcontroller la. The microcontroller includes a first transistor, a triangular wave generation circuit , a comparator, a switch, and a constant current circuit. The first transistor has a function of holding a potential corresponding to data written into the pixel by being turned off . The triangular wave generation circuit has a function of generating a triangular wave signal. The comparator has a function of generating an output signal according to the held potential and , the triangular wave signal. The switch is a display that has a function of controlling whether or not to allow the current flowing through the constant current circuit to flow through the display element according to the output signal is.

Prior Art Documents

Patent Document

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] One aspect of the present invention is to provide a novel functional panel excellent in convenience, usefulness or reliability as one of the problems. Or, to provide a novel display device excellent in convenience, usefulness or reliability as one of the problems. Or, to provide a novel input / output device excellent in convenience, usefulness or reliability as one of the problems. Or, to provide a novel information processing device excellent in convenience, usefulness or reliability as one of the problems. Or, to provide a novel functional panel, a novel display device, a novel input / output device, a novel information processing device or a novel semiconductor device as one of the problems. It should be noted that the description of these problems does not prevent the existence of other problems. It should be noted that one aspect of the present invention

[0006] is not required to solve all of these problems. It should be noted that other problems will be naturally clarified from the descriptions in the specification, drawings, claims, etc., and it is possible to extract other problems from the descriptions in the specification, drawings, claims, etc.

Means for Solving the Problems

[0007] (1) One aspect of the present invention is a functional panel having a first pixel. Further, the first pixel includes a first element, a color conversion layer, and a first functional layer.

[0008] ​The first element has a first functional layer sandwiched between it and the color conversion layer, and the first element has the function of emitting light. The first element contains gallium nitride.

[0009] The color conversion layer has the function of converting the color of the light emitted by the first element into a different color.

[0010] The first functional layer comprises a first insulating film and a pixel circuit, the first insulating film comprising the pixel circuit and the first The first insulating film has an opening, and the region is sandwiched between the elements.

[0011] The pixel circuit comprises a first transistor, and the first transistor contains a first oxide semiconductor film. The first transistor is electrically connected to the first element at its aperture.

[0012] (2) One aspect of the present invention is a functional panel having a first pixel. The first pixel is It comprises one element and a first functional layer.

[0013] The first element has the function of emitting light, and the first element has a first electrode, a second electrode and light emission The device comprises a layer containing a luminescent material. The layer containing the luminescent material is located between the first electrode and the second electrode. The layer containing the luminescent material, which includes an interleaved region, contains gallium nitride.

[0014] The first functional layer comprises a first insulating film and a pixel circuit. The first insulating film comprises a pixel circuit and The first insulating film has an opening, and it includes a region sandwiched between the elements.

[0015] The pixel circuit comprises a first transistor, and the first transistor contains a first oxide semiconductor film. The first transistor is electrically connected to the first electrode at its opening.

[0016] This allows the pixel circuit to be superimposed on the first element. Alternatively, the first element The proportion of the area of ​​the first pixel to the area of ​​the first element can be increased. High brightness can be obtained while suppressing the current density flowing through it. Alternatively, a light-emitting material can be used. Compared to a configuration using organic compounds in the layer containing the material, reliability can be improved. Alternatively, This can suppress the current leaking from the first transistor when it is in the off state. This reduces the likelihood of variations in the transistor's operating characteristics, thus suppressing display inconsistencies. Alternatively, The operating characteristics of the pixel circuit can be stabilized. As a result, convenience, usefulness, or reliability can be improved. We can provide a superior, novel functional panel.

[0017] (3) In another aspect of the present invention, the first insulating film is a second insulating film and a third insulating film. This is a function panel that includes [specific features / features].

[0018] The second insulating film has a region between it and the first transistor, with the third insulating film sandwiched in between. The border film contains silicon and oxygen. The third insulating film also contains silicon and nitrogen.

[0019] This suppresses the diffusion of impurities that cause malfunctions into the first transistor. It is possible to diffuse impurities such as water or hydrogen into the first transistor. It can be suppressed. As a result, a new functional panel with superior convenience, usefulness, or reliability. We can provide [something].

[0020] (4) Another aspect of the present invention is the above-described functional panel having a set of pixels.

[0021] A pair of pixels comprises a first pixel and a second pixel, and the second pixel comprises a second element.

[0022] The first insulating film comprises a fourth insulating film, the fourth insulating film separating the second element from the first element. It has the function of [doing something].

[0023] This makes it possible to suppress the influence of the operation of the first element on the operation of the second element. Alternatively, the second element can be placed closer to the first element. The ratio of the child's area to the area of ​​the first pixel and the ratio of the second element's area to the area of ​​the second pixel The proportion can be increased. As a result, it can be improved in terms of convenience, usefulness, or reliability. We can provide a new functional panel.

[0024] (5) Another aspect of the present invention is the above-described functional panel having a first drive circuit.

[0025] The first functional layer includes a first drive circuit, and the first drive circuit includes a second transistor.

[0026] The second transistor comprises a second oxide semiconductor film, and the second oxide semiconductor film is a first oxide Contains elements found in semiconductor films.

[0027] As a result, in the process of forming the semiconductor film of the transistors that make up the pixel circuit, the first It is possible to form the semiconductor film of the transistors in the drive circuit. Or, a functional panel. The manufacturing process can be simplified. As a result, it can be made more convenient, useful, or reliable. We can provide a new functional panel.

[0028] (6) Another aspect of the present invention is the above-described functional panel having a second functional layer.

[0029] The second functional layer comprises a first contact, a second drive circuit, and a fifth insulating film.

[0030] The first contact is electrically connected to the second drive circuit, and the second drive circuit is connected to the third transistor The third transistor includes a semiconductor containing elements from Group 14.

[0031] The first functional layer comprises a sixth insulating film and a second contact, and the sixth insulating film comprises a fifth insulating film and The sixth insulating film has a region sandwiched between the fourth insulating film and the region that is joined to the fifth insulating film. It is equipped with.

[0032] The second contact is electrically connected to the first contact, and the second contact is electrically connected to the pixel circuit. ru.

[0033] This allows, for example, the pixel signal to be supplied using the second drive circuit. For example, using a transistor with single-crystal silicon as the semiconductor in the second drive circuit. This is possible. Alternatively, for example, the second drive circuit can be placed superimposed on the first pixel. It is possible. Or, the external dimensions of the functional panel can be made smaller. As a result, convenience, usefulness or reliability This allows us to provide novel functional panels with superior performance.

[0034] (7) In addition, in one aspect of the present invention, the function of displaying the light emitted by the second element is provided by the second pixel This is the function panel that it has.

[0035] The second element has the function of emitting light of the same color as the light emitted by the first element, and the first image The element is equipped with a color conversion layer, which converts the color of the light emitted by the first element into a different color. To possess the ability.

[0036] This allows the second element to be formed using the same process as the first element. Alternatively, the second Using one pixel, it is possible to display a different color from the second pixel. As a result, convenience This allows us to provide novel functional panels that are highly useful or reliable.

[0037] (8) Another aspect of the present invention is the above-mentioned functional panel having a region.

[0038] The region comprises one set of pixels and another set of pixels.

[0039] A group of pixels is arranged in the row direction, and a group of pixels contains a set of pixels. A set of pixels in the group are electrically connected to the first conductive film.

[0040] Another group of pixels is arranged in the column direction intersecting the row direction, and another group of pixels is , including one set of pixels. Another set of pixels in another group is electrically connected to the second conductive film. ru.

[0041] This allows image information to be supplied to multiple pixels. As a result, convenience and usefulness Alternatively, it is possible to provide a new functional panel with superior reliability.

[0042] (9) Another aspect of the present invention is a display device having a control unit and the above-mentioned functional panel. ru.

[0043] The control unit is supplied with image information and control information, and the control unit generates information based on the image information. The control unit generates control signals based on control information, and the control unit supplies information and control signals. ru.

[0044] The function panel is supplied with information and control signals, and a set of pixels displays information based on that information.

[0045] This allows image information to be displayed using the first element. As a result, convenience, This makes it possible to provide a novel display device that is highly useful or reliable.

[0046] (10) Another aspect of the present invention is an input / output device having an input unit and a display unit.

[0047] The display unit is equipped with the above-mentioned function panel. The input unit is equipped with a detection area. It detects objects that are close to it. The detection area also includes a region that overlaps with a set of pixels.

[0048] This allows image information to be displayed using the display unit, while also allowing access to areas adjacent to the display unit that overlap with it. It can detect this. Alternatively, by using a finger or other object placed close to the display as a pointer, the position can be detected. Location information can be entered. Alternatively, location information can be associated with image information displayed on the display unit. This allows for the creation of novel input / output devices with superior convenience, usefulness, or reliability. It can be provided.

[0049] (11) In addition, one aspect of the present invention is an information processing apparatus having an arithmetic unit and an input / output device. be.

[0050] The arithmetic unit is supplied with input information or detection information, and the arithmetic unit processes the input information or detection information. Based on this, control information and image information are generated, and the computing unit supplies the control information and image information. do.

[0051] The input / output device supplies input information and detection information, and the input / output device supplies control information and image information. The supplied input / output device includes a display unit, an input unit, and a detection unit.

[0052] The display unit is equipped with the above-mentioned function panel, and the display unit displays image information based on control information and input The unit generates input information. The detection unit generates detection information.

[0053] This allows control information to be generated based on input information or detection information. Alternatively, image information can be displayed based on input information or detection information. This enables the provision of novel information processing devices that offer superior convenience, usefulness, or reliability.

[0054] (12) In addition, one aspect of the present invention relates to a keyboard, hardware buttons, pointing Vice, touch sensor, illuminance sensor, imaging device, voice input device, eye-tracking device, posture detection This is an information processing device that includes one or more of the above-mentioned devices and the function panel described above.

[0055] This allows image information or control based on information supplied using various input devices. Information can be generated by a computing device. As a result, it offers superior convenience, usefulness, or reliability. This enables the provision of a novel information processing device.

[0056] In the drawings attached to this specification, the components are classified by function and are shown as independent blocks. Although a block diagram is shown, it is difficult to completely separate the actual components by function. Furthermore, a single component may be involved in multiple functions.

[0057] In this specification, the source and drain of a transistor are defined as the polarity of the transistor and each The name changes depending on the potential applied to the terminals. Generally, n-channel In a transistor, the terminal to which a low potential is applied is called the source, and the terminal to which a high potential is applied is called the source. The terminal that is exposed to low potential is called the drain. Also, in p-channel transistors, when a low potential is applied... The terminal to which the current is applied is called the drain, and the terminal to which a high potential is applied is called the source. So, for convenience, let's assume that the source and drain are fixed, and the transistor's connections Although the relationship is sometimes explained, in reality, the source and drain are called according to the potential relationship described above. The way they move is reversed.

[0058] In this specification, the source of a transistor is a part of the semiconductor film that functions as the active layer. This refers to the source region, or the source electrode connected to the semiconductor film. Similarly, The drain of a DISTA is a drain region which is part of the semiconductor film, or a part of the semiconductor film. It refers to the connected drain electrode. The gate, on the other hand, refers to the gate electrode.

[0059] In this specification, the state in which transistors are connected in series means, for example, the first transistor Only one of the sources or drains of the second transistor is connected to the source or drain of the second transistor. This means that only one side of the transistor is connected. Also, when transistors are connected in parallel... The state in which one of the sources or drains of the first transistor is connected to the second transistor Connected to either the source or drain of the first transistor, and the source or drain of the first transistor This means that the other end of one transistor is connected to the other end of the source or drain of the second transistor. do.

[0060] In this specification, "connection" means an electrical connection, where current, voltage, or potential is supplied. This corresponds to a state where power can be supplied or transmitted. Therefore, a connected state means that power is directly connected. This does not necessarily refer to a state in which current, voltage, or potential is available or available for transmission. To enable transmission, the circuit elements such as wires, resistors, diodes, and transistors are connected. This category also includes states where devices are indirectly connected.

[0061] In this specification, when components that are independent in the circuit diagram are connected to each other, However, in reality, for example, when part of the wiring functions as an electrode, one conductive film can be multiple In some cases, the components may also possess the functions of multiple components. In this specification, connection means such as This category also includes cases where a single conductive film possesses the functions of multiple components.

[0062] Furthermore, in this specification, if either the first electrode or the second electrode of the transistor is the source One electrode points to the drain electrode. [Effects of the Invention]

[0063] According to one aspect of the present invention, a novel functional panel is provided that is superior in convenience, usefulness, or reliability. It is possible to provide a novel display device that is superior in convenience, usefulness, or reliability. It is possible to propose a novel input / output device that is superior in convenience, usefulness, or reliability. It can be provided. Or, a novel information processing device that is superior in convenience, usefulness or reliability. It can provide a new function panel, a new display device, or a new input / output device. This allows for the provision of novel information processing devices or novel semiconductor devices.

[0064] Furthermore, the description of these effects does not preclude the existence of other effects. The embodiment does not necessarily have to have all of these effects. Furthermore, other effects are... This will become clear from the description in the specification, drawings, claims, etc., and the specification, drawings Furthermore, it is possible to extract other effects from the descriptions in the claims and other documents. [Brief explanation of the drawing]

[0065] [Figure 1] Figures 1(A) to 1(C) illustrate the configuration of a functional panel according to an embodiment. [Figure 2] Figure 2 is a top view illustrating the configuration of a functional panel according to an embodiment. [Figure 3] Figure 3 is a circuit diagram illustrating the configuration of a functional panel according to an embodiment. [Figure 4] Figures 4(A) and (B) are cross-sectional views illustrating the configuration of a functional panel according to an embodiment. [Figure 5] Figures 5(A) and (B) are cross-sectional views illustrating the configuration of a functional panel according to an embodiment. [Figure 6] Figures 6(A) and (B) are cross-sectional views illustrating the configuration of a functional panel according to an embodiment. [Figure 7] Figure 7 is a diagram illustrating the configuration of a functional panel according to an embodiment. [Figure 8] Figures 8(A) to 8(D) illustrate the configuration of a display device according to an embodiment. [Figure 9] Figure 9 is a block diagram illustrating the configuration of an input / output device according to an embodiment. [Figure 10] Figures 10(A) to 10(C) are block diagrams and projection views illustrating the configuration of the information processing device according to the embodiment. [Figure 11] Figures 11(A) and (B) are flowcharts illustrating the driving method of the information processing device according to the embodiment. [Figure 12] Figures 12(A) to (C) illustrate the driving method of the information processing device according to the embodiment. [Figure 13] Figures 13(A) to (E) illustrate the configuration of an information processing device according to an embodiment. [Figure 14] Figures 14(A) to (E) illustrate the configuration of an information processing device according to an embodiment. [Figure 15]Figures 15(A) and (B) illustrate the configuration of an information processing device according to an embodiment. [Figure 16] Figure 16 is a diagram illustrating the configuration of a functional panel according to an embodiment. [Figure 17] Figures 17(A) to (C) are cross-sectional views illustrating the configuration of a functional panel according to an embodiment. [Figure 18] Figures 18(A) to (C) are cross-sectional views illustrating the configuration of a functional panel according to an embodiment. [Figure 19] Figure 19 is a diagram illustrating the configuration of a functional panel according to an embodiment. [Figure 20] Figure 20 is a cross-sectional view illustrating the configuration of a functional panel according to an embodiment. [Figure 21] Figure 21(A) is a top view of a semiconductor device according to one embodiment of the present invention. Figures 21(B) to 21(D) are cross-sectional views of a semiconductor device according to one embodiment of the present invention. [Figure 22] Figure 22(A) illustrates the classification of IGZO crystal structures. Figure 22(B) illustrates the XRD spectrum of a CAAC-IGZO film. Figure 22(C) illustrates the micro-electron diffraction pattern of a CAAC-IGZO film. [Figure 23] Figures 23(A) and (B) are cross-sectional views illustrating the configuration of a functional panel according to an embodiment. [Figure 24] Figures 24(A) and (B) show examples of the configuration of electronic equipment. [Modes for carrying out the invention]

[0066] A functional panel according to one aspect of the present invention has a first pixel, the first pixel is a first element, a color conversion layer It comprises a first functional layer. The first element has the first functional layer sandwiched between it and the color conversion layer, and the first The element has the function of emitting light, and the first element contains gallium nitride. The color conversion layer is the first element It has the function of converting the color of the light emitted by the child into a different color. The first functional layer is the first insulating film. and a pixel circuit, the first insulating film is sandwiched between the pixel circuit and the first element The first insulating film is provided with an aperture. The pixel circuit is provided with a first transistor, and the first The transistor includes a first oxide semiconductor film, and the first transistor has an aperture, It is electrically connected to the electrodes.

[0067] This allows the pixel circuit to be superimposed on the first element. The area can be increased in proportion to the area of ​​the first pixel. Also, the first element can be flowed through. High brightness can be obtained while suppressing the current density. In addition, a layer containing a light-emitting material can be obtained. Compared to configurations using organic compounds, reliability can be improved. Also, in the off state This can suppress the current leaking from the first transistor. The operating characteristics are less prone to distribution, and display unevenness can be suppressed. Also, the movement of the pixel circuit The operating characteristics can be stabilized. As a result, novel products with superior convenience, usefulness, or reliability can be developed. A functional panel can be provided.

[0068] Embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. Without departing from the spirit and scope of the present invention, its form and details may be modified in various ways. It will be easily understood by those skilled in the art to obtain this. Therefore, the present invention is as shown in the embodiments below. The description is not to be interpreted as being limited to the stated content. The same reference numeral is used in common across different drawings for parts that are identical or have similar functions. I will omit the explanation of that repetition.

[0069] (Embodiment 1) In this embodiment, the configuration of a functional panel according to one aspect of the present invention will be shown with reference to Figures 1 to 6. I'll explain while doing so.

[0070] Figure 1(A) is a block diagram of a functional panel according to one embodiment of the present invention, and Figures 1(B) and 1( C) is a diagram illustrating a part of Figure 1(A).

[0071] Figure 2 is a diagram illustrating the configuration of a functional panel according to one embodiment of the present invention, and illustrates a part of Figure 1(A). This is a diagram.

[0072] Figure 3 shows a pixel circuit 530G(i,j) that can be used in a functional panel according to one embodiment of the present invention. This is a circuit diagram.

[0073] Figure 4(A) is a diagram illustrating the configuration of a functional panel according to one embodiment of the present invention, and is a cross-section of Figure 1(A). Disconnections in lines X1-X2, X3-X4, X9-X10 and a pair of pixels 703(i,j) This is a view drawing. Also, Figure 4(B) shows the structure of a functional panel according to one embodiment of the present invention, which is different from Figure 4(A). This is a diagram explaining the process.

[0074] Figure 5(A) is a diagram illustrating the configuration of a functional panel according to one embodiment of the present invention, as shown in Figure 1(B). This is a cross-sectional view of pixel 702G(i,j). Figure 5(B) is a cross-section illustrating a part of Figure 5(A). This is a diagram.

[0075] Figure 6(A) is a diagram illustrating the configuration of a functional panel according to one embodiment of the present invention, and is a cross-section of Figure 1(A). This is a cross-sectional view along line X1-X2 and cutting line X3-X4. Figure 6(B) is a cross-sectional view of Figure 6(A). This is a diagram illustrating a part of the process.

[0076] In this specification, a variable that takes an integer value of 1 or more may be used as the sign. For example If (p) contains a variable p that takes an integer value of 1 or greater, then any of the maximum p components are special It may be used as part of the sign that is defined. Also, for example, a variable m that takes an integer value of 1 or more. A code that identifies one of up to m × n components of (m,n), which contains the variable n. It may be used in certain departments.

[0077] <Example configuration of function panel 700 1> The functional panel 700 described in this embodiment has pixels 702G(i,j) (Figure 1( See A) and Figure 1(B).

[0078] 《Example Configuration 1 for Pixel 702G(i,j)》 Pixel 702G(i,j) comprises element 550G(i,j) and functional layer 520 (Figure 1). (See (C) and Figure 5(A)).

[0079] 《Example Configuration of Element 550G(i,j) 1》 Element 550G(i,j) has the function of emitting light, and element 550G(i,j) has electrode 55 1(i,j), comprising an electrode 552 and a layer 553 containing a light-emitting material (see Figure 5(A)). For example, a light-emitting diode can be used as element 550G(i,j). Specifically This allows the use of a vertical light-emitting diode as element 550G(i,j). Also, blue A light-emitting diode that emits colored light can be used as element 550G(i,j).

[0080] The layer 553 containing the luminescent material is sandwiched between electrodes 551(i,j) and 552. The layer 553, which has a region and contains a luminescent material, contains gallium nitride.

[0081] 《Example Configuration of Functional Layer 520 1》 The functional layer 520 comprises an insulating film 501 and a pixel circuit 530G(i,j) (Figure 4(A)). (See Figures 4(B) and 5(A)). Functional layer 520 is, for example, a pixel circuit 530G(i This includes transistor M21 used in (j) (see Figures 3 and 5(A)).

[0082] 《Example 1 of the configuration of insulating film 501》 The insulating film 501 is sandwiched between the pixel circuit 530G(i,j) and the element 550G(i,j). The insulating film 501 has a region and an opening 591G(i,j).

[0083] 《Example configuration of pixel circuit 530G(i,j)》 The pixel circuit 530G(i,j) includes transistor M21 (see Figures 3 and 5(A)). ). Transistor M21 is electrically connected to electrode 551(i,j) at aperture 591G. They are connected. Note that transistor M21 includes an oxide semiconductor film. For example, conductive film 51 2A electrically connects transistor M21 and electrode 551(i,j). The conductive film 512B electrically connects transistor M21 and conductive film ANO (see Figure 3). ).

[0084] This allows the pixel circuit 530G(i,j) to be superimposed on the element 550G(i,j). This is possible. Alternatively, the area of ​​element 550G(i,j) becomes the area of ​​pixel 702G(i,j). The proportion it occupies can be increased. Alternatively, the current density flowing through element 550G(i,j) can be increased. High brightness can be obtained while suppressing the degree. Alternatively, a layer 553 containing a light-emitting material can be used. Compared to configurations using organic compounds, reliability can be improved. Or, in the off state. The current leaking from transistor M21 can be suppressed. Alternatively, the transistor The operating characteristics of the pixels are less prone to distribution, and display unevenness can be suppressed. Alternatively, the pixel circuit The operating characteristics of 530G(i,j) can be stabilized. As a result, convenience, usefulness and This allows us to provide a new functional panel with superior reliability.

[0085] 《Example 2 of the configuration of insulating film 501》 The insulating film 501 includes insulating film 501B and insulating film 501C. Insulating film 501B is a transistor A region is provided between the zista M21 and an insulating film 501C, and the insulating film 501B is made of silicon It contains oxygen. Furthermore, the insulating film 501C contains silicon and nitrogen.

[0086] This suppresses the diffusion of impurities that cause malfunctions into transistor M21. It is possible to diffuse impurities such as water or hydrogen into transistor M21. It can be suppressed. As a result, a new functional panel with superior convenience, usefulness, or reliability. We can provide [something].

[0087] <Example configuration of the 700 function panel 2> The functional panel described in this embodiment has a pair of pixels 703(i,j).

[0088] 《Example 1 of the configuration of a pair of pixels 703(i,j)》 A pair of pixels 703(i,j) consists of pixels 702G(i,j) and 702B(i,j). It is equipped with (see Figure 1(B)). Pixel 702B(i,j) is equipped with element 550B(i,j). ru.

[0089] The insulating film 501 is provided with insulating film 501A, and insulating film 501A provides element 550B(i,j) to element It has the function of separating from 550G(i,j) (see Figure 5(A)). Specifically, the light-emitting layer It has a function to isolate the 553EM from adjacent elements.

[0090] This affects the operation of element 550G(i,j) in relation to the operation of element 550B(i,j). Resonance can be suppressed. Specifically, in conjunction with the operation of element 550G(i,j), element 55 This can suppress the crosstalk phenomenon where 0B(i,j) operates unintentionally. Alternatively, element 550B(i,j) can be positioned closer to element 550G(i,j). It is possible. Or, the area of ​​element 550G(i,j) occupies the area of ​​pixel 702G(i,j). Ratio and the ratio of the area of ​​element 550B(i,j) to the area of ​​pixel 702B(i,j) This can be made larger. Alternatively, the aperture ratio of pixel 702G(i,j) can be improved. Yes, it is possible. As a result, it is possible to provide a novel functional panel that is superior in convenience, usefulness, or reliability. It is possible.

[0091] Furthermore, the functional panel 700 has conductive film G1(i), conductive film G2(i), and conductive film S1g(j ) has conductive film S2g(j), conductive film ANO, and conductive film VCOM2 (see Figure 3). .

[0092] For example, conductive film G1(i) is supplied with the first selection signal, and conductive film G2(i) is supplied with the second selection signal. A selection signal is supplied to conductive film S1g(j), and an image signal is supplied to conductive film S2g(j). It is supplied with control signals.

[0093] 《Example 2 of the configuration of a pair of pixels 703(i,j)》 A pair of pixels 703(i,j) contains pixels 702G(i,j) (see Figure 1(B)). Element 702G(i,j) is equipped with pixel circuit 530G(i,j) and element 550G(i,j). (See Figure 1(C)).

[0094] 《Example Configuration 1 of Pixel Circuit 530G(i,j)》 The pixel circuit 530G(i,j) is supplied with a first selection signal, and the pixel circuit 530G(i,j) Based on the first selection signal, an image signal is acquired. For example, using a conductive film G1(i) Then, the first selection signal can be supplied (see Figure 3). Alternatively, conductive film S1g(j) An image signal can be supplied using this. Furthermore, a first selection signal is supplied, and the image signal The operation of inputting data to the pixel circuit 530G(i,j) can be called "writing."

[0095] 《Example Configuration 2 of Pixel Circuit 530G(i,j)》 The pixel circuit 530G(i,j) consists of switch SW21, switch SW22, and transistor M 21, includes capacitor C21 and node N21 (see Figure 3). Also, pixel circuit 530G( i,j) includes node N22, capacitor C22, and switch SW23.

[0096] Transistor M21 has a gate electrode electrically connected to node N21, and element 550G A first electrode electrically connected to (i,j), and a second electrode electrically connected to the conductive film ANO. It comprises electrodes and

[0097] Switch SW21 has a first terminal electrically connected to node N21 and a conductive film S1g( Based on the potential of the conductive film G1(i) and the second terminal electrically connected to j), the conduction state is determined. Alternatively, it may have a function to control the non-conductive state.

[0098] Switch SW22 has a first terminal that is electrically connected to the conductive film S2g(j), and conductive film G It has a function to control the conduction state or non-conduction state based on the potential of 2(i).

[0099] Capacitor C21 is a conductive film electrically connected to node N21 and the second of switch SW22 It is equipped with a conductive film that is electrically connected to the electrode.

[0100] This allows the image signal to be stored in node N21. Alternatively, node N21 The potential can be changed using switch SW22. Alternatively, element 550G(i The intensity of the light emitted by (j) can be controlled using the potential of node N21. As a result, it is possible to provide a novel functional panel that is superior in terms of convenience or reliability.

[0101] 《Example Configuration of Element 550G(i,j) 1》 Element 550G(i,j) is electrically connected to pixel circuit 530G(i,j) (Figure 2) (See Figure 3). Also, element 550G(i,j) is electrically connected to pixel circuit 530G(i,j). Electrode 551G(i,j) connected to the conductive film VCOM2, and electrode 5 that is electrically connected to the conductive film VCOM2. It is equipped with 52 (see Figures 3 and 5(A)). Note that element 550G(i,j) is a node It features a function that operates based on the potential of N21.

[0102] Instead of light-emitting diodes, for example, organic electroluminescent elements or QDLEs can be used. D (Quantum Dot LED), etc., can be used as element 550G(i,j). Cut.

[0103] 《Example 3 of the configuration of a pair of pixels 703(i,j)》 Multiple pixels can be used as a single pair of pixels 703(i,j). For example, if the hues are relative to each other... Multiple pixels can be used to display different colors. It can be rephrased as "pixel." Alternatively, a set of multiple subpixels can be referred to as a pixel. It is possible.

[0104] This allows for additive color mixing of the colors displayed by the multiple pixels. Alternatively, the individual It can display hues that cannot be represented by pixels.

[0105] Specifically, pixel 702B(i,j) displays blue, and pixel 702G(i ,j) and the pixel 702R(i,j) which displays red, are used as a pair of pixels 703(i,j). It is possible to be there. Also, pixels 702B(i,j), pixels 702G(i,j) and pixels Each of the 702R(i,j) pixels can be referred to as a subpixel (see Figure 1(B)).

[0106] Furthermore, for example, a pixel that displays white, etc., may be added to the above set and used in pixel 703(i,j) It is possible to have pixels that display cyan, pixels that display magenta, and yellow The pixels that display the dash can be used as a pair of pixels 703(i,j).

[0107] Furthermore, for example, in addition to the above pair of pixels, a pair of pixels 703(i,j) that emit infrared light can be added. It can be used for ) Specifically, it has wavelengths of 650 nm to 1000 nm. A pair of pixels 703(i,j) can be used to emit light containing light.

[0108] <Example configuration of the 700 function panel 3> The functional panel described in this embodiment has a drive circuit GD (see Figure 1(A)). It has a drive circuit SD.

[0109] Example configuration of the drive circuit GD The drive circuit GD has the function of supplying a first selection signal and a second selection signal. For example The drive circuit GD is electrically connected to the conductive film G1(i) and supplies a first selection signal. It is electrically connected to membrane G2(i) and supplies a second selection signal.

[0110] 《Example configuration of the SD drive circuit》 The drive circuit SD has the function of supplying image signals and control signals, and the control signal is the first level Includes a second level and a third level. For example, the drive circuit SD is electrically connected to the conductive film S1g(j). It is connected to supply image signals, electrically connected to the conductive film S2g(j), and supplies control signals. ru.

[0111] 《Example Configuration of Functional Layer 520 2》 The functional layer 520 includes a drive circuit GD (see Figures 4 and 6(A)). The functional layer 520 is, For example, it includes the transistor MD used in the drive circuit GD.

[0112] 《Example of GD drive circuit configuration 1》 The drive circuit GD includes a transistor MD, and the transistor MD comprises an oxide semiconductor film. The oxide semiconductor film contains elements found in the oxide semiconductor film of transistor M21.

[0113] For example, a semiconductor film with the same composition as the semiconductor film used in transistor M21, Use D.

[0114] This allows the semiconductor film of the transistor in the pixel circuit 530G(i,j) to be formed. In this process, the semiconductor film of the transistor in the drive circuit GD can be formed. Alternatively, the manufacturing process for functional panels can be simplified. As a result, convenience, usefulness, and This allows us to provide a new functional panel with superior reliability.

[0115] Examples of transistor configurations Function layer 520, such as bottom-gate transistors or top-gate transistors It can be used for this purpose. Specifically, a transistor can be used as a switch.

[0116] The transistor consists of semiconductor film 508, conductive film 504, conductive film 507A, and conductive film 507B. It is equipped with (see Figure 5(B)).

[0117] The semiconductor film 508 has a region 508A that is electrically connected to the conductive film 507A, and the conductive film 507B The semiconductor film 508 includes region 508A and region 508B, which are electrically connected to each other. Region 508C is provided between regions 508B.

[0118] The conductive film 504 has a region that overlaps with region 508C, and the conductive film 504 has the function of a gate electrode. El.

[0119] The insulating film 506 includes a region sandwiched between the semiconductor film 508 and the conductive film 504. Film 506 functions as a gate insulating film.

[0120] The conductive film 507A has either the function of a source electrode or the function of a drain electrode, and the conductive film 50 7B has the function of either a source electrode or a drain electrode, and the other of the other.

[0121] Furthermore, the conductive film 524 can be used in transistors. The conductive film 524 is the conductive film 50 The region includes a semiconductor film 508 sandwiched between 4. The conductive film 524 is the mechanism of the second gate electrode. To possess the ability.

[0122] Furthermore, in the process of forming the semiconductor film used for the transistors of the pixel circuit, the drive circuit It is possible to form semiconductor films for use in transistors.

[0123] 《Example 1 of semiconductor film 508 configuration》 For example, a semiconductor containing elements of Group 14 can be used in the semiconductor film 508. Specifically, A semiconductor containing silicon can be used for the semiconductor film 508.

[0124] [Hydrogenated amorphous silicon] For example, hydrogenated amorphous silicon can be used as the semiconductor film 508. Or, Microcrystalline silicon and the like can be used in the semiconductor film 508. This allows for, for example, poly This provides a functional panel with less display unevenness than functional panels that use silicon as the semiconductor film 508. This is possible. Alternatively, the functional panel can be easily enlarged.

[0125] [Polysilicon] For example, polysilicon can be used in the semiconductor film 508. This allows, for example, water Compared to transistors that use amorphous silicon as the semiconductor film 508, the transistor The field-effect mobility can be increased. Alternatively, for example, hydrogenated amorphous silicon. This allows for improved driving capability compared to transistors using semiconductor film 508. Alternatively, For example, a transistor using hydrogenated amorphous silicon as the semiconductor film 508 has a pixel This can improve the aperture ratio.

[0126] Alternatively, for example, a transistor that uses hydrogenated amorphous silicon as the semiconductor film 508. This can improve the reliability of transistors.

[0127] Alternatively, the temperature required for the fabrication of the transistor can be, for example, the temperature of a transistor using single-crystal silicon. It can be made lower than the standard.

[0128] Alternatively, the semiconductor film used in the transistors of the drive circuit can be used in the transistors of the pixel circuit. It can be formed using the same process as the semiconductor film, or the same process as the substrate on which the pixel circuit is formed. A drive circuit can be formed on the substrate. Alternatively, the number of components constituting the electronic device can be reduced. It is possible.

[0129] 《Example 2 of the configuration of semiconductor film 508》 For example, metal oxides can be used in the semiconductor film 508. This allows for amorphous Compared to pixel circuits that use transistors with silicon as the semiconductor film, the pixel circuit is The time for which the image signal can be held can be extended. Specifically, flicker While suppressing the generation, the selection signal should be less than 30 Hz, preferably less than 1 Hz, more preferably It can be supplied at a frequency of less than once per minute. As a result, it can be stored by the user of the information processing device. This can reduce fatigue. Furthermore, it can reduce power consumption associated with operation.

[0130] Alternatively, for example, a functional panel using polysilicon as the semiconductor film 508 would have less display unevenness. It is possible to provide a function panel that does not have a function panel. Alternatively, the duty cycle can be reduced to, for example, 50% or less. It is possible to control and drive element 550G(i,j). Alternatively, for example, smart graphics A head-mounted display or similar device can be provided.

[0131] For example, transistors using oxide semiconductors can be used. Specifically, Oxide semiconductors containing zinc, oxide semiconductors containing indium, gallium, and zinc, or Oxide semiconductors containing zinc, gallium, zinc, and tin can be used as semiconductor films.

[0132] For example, the leakage current in the off state is when amorphous silicon is used in the semiconductor film. Smaller transistors than the one used can be used. Specifically, oxide semiconductors Transistors using semiconductor films as conductors can be used as switches, etc. , longer duration than circuits using amorphous silicon transistors as switches, The potential of the floating node can be maintained.

[0133] For example, a 25 nm thick film containing indium, gallium, and zinc is placed on semiconductor film 508. It can be used.

[0134] This can suppress display flickering, or reduce power consumption. It can do that. Or, it can display fast-moving videos smoothly. Or, it can display rich tiers. Photos and other images can be displayed in a stylized manner. As a result, a new system with superior convenience, usefulness, and reliability can be achieved. A standard functional panel can be provided.

[0135] 《Example 3 of the configuration of semiconductor film 508》 For example, compound semiconductors can be used as semiconductors in transistors. Specifically, Semiconductors containing um arsenide can be used.

[0136] For example, organic semiconductors can be used as semiconductors in transistors. Specifically, polya Organic semiconductors containing cereals or graphene can be used in semiconductor films.

[0137] Examples of capacity configurations The capacitance comprises one conductive film, another conductive film, and an insulating film. The insulating film is one conductive film and It comprises a region sandwiched between other conductive films.

[0138] For example, a conductive film used for the source or drain electrode of a transistor, and a gate electrode The conductive film to be used and the insulating film to be used for the gate insulating film can be used as a capacitor.

[0139] 《Configuration Example 2 of Functional Layer 520》 The functional layer 520 includes an insulating film 521, an insulating film 518, an insulating film 516, an insulating film 506, and an insulating film 501C, etc. (see FIGS. 5(A) and 5(B)).

[0140] The insulating film 521 has a region that sandwiches the pixel circuit 530G(i,j) between it and the element 550G(i,j). region.

[0141] The insulating film 518 has a region sandwiched between the insulating film 521 and the insulating film 501C.

[0142] The insulating film 516 has a region sandwiched between the insulating film 518 and the insulating film 501C.

[0143] The insulating film 506 has a region sandwiched between the insulating film 516 and the insulating film 501C.

[0144] [Insulating Film 521] For example, an insulating inorganic material, an insulating organic material, or an insulating composite material containing an inorganic material and an organic material can be used for the insulating film 521.

[0145] Specifically, an inorganic oxide film, an inorganic nitride film, an inorganic oxynitride film, etc., or a laminated material obtained by laminating a plurality selected from these can be used for the insulating film 521.

[0146] For example, a film containing a silicon oxide film, a silicon nitride film, a silicon oxynitride film, an aluminum oxide film, etc. or a laminated material obtained by laminating a plurality selected from these can be used for the insulating film 521. The silicon nitride film is a dense film and has an excellent function of suppressing the diffusion of impurities. excellent.

[0147] For example, materials such as polyimide, polysiloxane, or composite materials of these and inorganic materials can be used for the insulating film 521. By the way, polyimide has excellent properties compared to other organic materials in terms of thermal stability, insulation, toughness, low dielectric constant, low thermal expansion rate, chemical resistance, etc. Therefore, polyimide can be particularly preferably used for the insulating film 521 and the like. However , one aspect of the present invention is not limited to this. As the insulating film 521, inorganic materials such as silicon oxide, silicon nitride , and aluminum oxide may be used. By using an inorganic material as the insulating film 521 , the reliability of the transistor M21 can be improved.

[0148] In addition, the insulating film 521 may be formed using a photosensitive material. Specifically, a film formed using a photosensitive polyimide or a photosensitive acrylic resin, etc. can be used as the insulating film 521.

[0149] Thereby, the insulating film 521 can flatten, for example, steps resulting from various structures overlapping the insulating film 521. In addition, the insulating film 521 may have a laminated structure of the inorganic material described above and an organic material having a flattening function such as polyimide or a photosensitive acrylic resin.

[0150] [Insulating film 518] For example, the materials that can be used for the insulating film 521 can be used for the insulating film 518.

[0151] For example, materials having a function of suppressing the diffusion of oxygen, hydrogen, water, alkali metals, alkaline earth metals, etc. can be used for the insulating film 518. Specifically, a nitride insulating film can be used as the insulating film 51 . It can be used in 8. For example, silicon nitride, silicon oxide nitride, aluminum nitride. Aluminum nitride oxide and the like can be used in the insulating film 518. This allows transient This can suppress the diffusion of impurities into the semiconductor film.

[0152] [Insulating film 516] For example, a material that can be used for insulating film 521 can be used for insulating film 516.

[0153] Specifically, a film manufactured using a different method than that used for the insulating film 518 can be used for the insulating film 516. .

[0154] [Insulator 506] For example, a material that can be used for insulating film 521 can be used for insulating film 506.

[0155] Specifically, silicon oxide film, silicon oxide nitride film, silicon nitride oxide film, silicon nitride film. Films, aluminum oxide film, hafnium oxide film, yttrium oxide film, zirconium oxide film Gallium oxide film, tantalum oxide film, magnesium oxide film, lanthanum oxide film, cerium oxide A film containing a luminescent film or a neodymium oxide film can be used as the insulating film 506.

[0156] [Insulating film 501D] The insulating film 501D includes a region sandwiched between the insulating film 501C and the insulating film 516.

[0157] For example, a material that can be used for insulating film 506 can be used for insulating film 501D. .

[0158] [Insulating film 501C] For example, a material that can be used for insulating film 521 can be used for insulating film 501C. . Specifically, a material containing silicon and oxygen can be used for the insulating film 501C. This can suppress the diffusion of impurities into the pixel circuit, element 550G(i,j), etc. It can be done.

[0159] 《Configuration Example 3 of Functional Layer 520》 The functional layer 520 includes a conductive film, wiring, and terminals. Materials having conductivity can be used for the wiring, electrodes, terminals, conductive films, etc.

[0160] [Wiring, etc.] For example, inorganic conductive materials, organic conductive materials, metals, or conductive ceramics can be used for the wiring, etc. It can be used.

[0161] Specifically, metal elements selected from aluminum, gold, platinum, silver, copper, chromium, tantalum, titanium, molybdenum, tungsten, nickel, iron, cobalt, palladium, or manganese can be used for the wiring, etc. Or, alloys containing the above-mentioned metal elements can be used for the wiring, etc. In particular, an alloy of copper and manganese is suitable for fine processing using the wet etching method. It is suitable.

[0162] Specifically, a two-layer structure in which a titanium film is laminated on an aluminum film, a two-layer structure in which a titanium film is laminated on a titanium nitride film, a two-layer structure in which a tungsten film is laminated on a titanium nitride film, a two-layer structure in which a tungsten film is laminated on a tantalum nitride film or a tungsten nitride film, a titanium film, and a three-layer structure in which an aluminum film is laminated on the titanium film and a titanium film is further formed thereon can be used for the wiring, etc. It can be used for the wiring, etc. Specifically, indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, etc.

[0163] Specifically, indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, Conductive oxides such as zinc oxide doped with gallium can be used in wiring and other applications.

[0164] Specifically, films containing graphene or graphite can be used for wiring and the like.

[0165] For example, by forming a film containing graphene oxide and reducing the film containing graphene oxide This allows for the formation of a film containing graphene. One method of reduction involves applying heat. Methods involving the use of laws or reducing agents can be cited.

[0166] For example, a film containing metal nanowires can be used for wiring, etc. Specifically, a film containing silver... Nanowires can be used.

[0167] Specifically, conductive polymers can be used in wiring and other applications.

[0168] For example, a conductive material can be used to connect terminal 519B to the flexible printed circuit board FPC1. It can be electrically connected (see Figure 4). Specifically, a conductive material CP is used to connect the terminals. 519B can be electrically connected to the flexible printed circuit board FPC1.

[0169] <Example configuration of the 700 function panel 4> Furthermore, the functional panel 700 includes a base material 510, a base material 770, and a sealing material 705 (Figure 5). (See (A)). The functional panel 700 also includes a structural KB.

[0170] 《Base material 510, base material 770》 A translucent material can be used for the base material 510 or the base material 770.

[0171] For example, a flexible material can be used for the base material 510 or base material 770. This makes it possible to provide a functional panel with flexibility.

[0172] For example, materials with a thickness of 0.7 mm or less and a thickness of 0.1 mm or more can be used. This allows the use of materials polished to a thickness of approximately 0.1 mm. This reduces the weight. It can be reduced.

[0173] By the way, the 6th generation (1500mm x 1850mm), the 7th generation (1870mm x 220 0mm), 8th generation (2200mm x 2400mm), 9th generation (2400mm x 280 Glass substrates such as 0mm, 10th generation (2950mm x 3400mm), and base material 510 This can be used on the base material 770. This makes it possible to manufacture large display devices. ru.

[0174] Organic materials, inorganic materials, or composite materials such as organic and inorganic materials are used as base material 510 or base material 7 It can be used for 70.

[0175] For example, inorganic materials such as glass, ceramics, and metals can be used. Specifically, Alkali-free glass, soda-lime glass, potash glass, crystal glass, aluminosilicate glass Lath, tempered glass, chemically strengthened glass, quartz or sapphire, etc., on base material 510 or base material It can be used for 770. Alternatively, aluminosilicate glass, tempered glass, chemically strengthened glass. A substrate 510 or base material, such as sapphire, is placed on the user-facing side of the functional panel. It can be suitably used with material 770. This prevents damage and scratches to the functional panel during use. This can prevent damage.

[0176] Specifically, inorganic oxide films, inorganic nitride films, or inorganic oxynitride films can be used. For example, silicon oxide film, silicon nitride film, silicon oxide nitride film, aluminum oxide film The following can be used. Stainless steel or aluminum, etc. as the base material 510 or It can be used with base material 770.

[0177] For example, single-crystal semiconductor substrates made of silicon or silicon carbide, polycrystalline semiconductor substrates, silico Compound semiconductor substrates such as germanium, SOI substrates, etc. are used as base material 510 or base material 770. This makes it possible to form semiconductor elements on substrate 510 or substrate 770. It is possible.

[0178] For example, an organic material such as resin, resin film, or plastic is used as the base material 510 or base material 7 It can be used in 70. Specifically, polyester, polyolefin, polyamide ( Nylon, aramid, etc.), polyimide, polycarbonate, polyurethane, acrylic resin A material containing a resin having siloxane bonds, such as epoxy resin or silicone, is used as the base material 5 It can be used with 10 or base material 770. For example, a resin film containing these materials. Resin plates or laminated materials can be used. This reduces the weight. This can be achieved. Or, for example, it can reduce the frequency of damage caused by dropping.

[0179] Specifically, polyethylene terephthalate (PET), polyethylene naphthalate (PE N), polyethersulfone (PES), cycloolefin polymer (COP) or Using cycloolefin copolymers (COC) or the like in base material 510 or base material 770 can.

[0180] For example, a film of metal, thin glass, or inorganic material is bonded to a resin film, etc. A composite material can be used as the base material 510 or base material 770. For example, a fibrous or A composite material in which particulate metal, glass, or inorganic material is dispersed in resin is used as a base material 510 or It can be used as a base material 770. For example, fibrous or particulate resin or organic material A composite material in which such substances are dispersed in an inorganic material can be used as the base material 510 or base material 770.

[0181] Furthermore, a single-layer material or a material consisting of multiple layers can be used as the base material 510 or base material 770. It is possible to use materials with laminated insulating films, etc. Specifically This is one or a silicon oxide layer selected from a silicon nitride layer or a silicon oxynitride layer, etc. A material in which multiple films are laminated can be used. This allows for, for example, the use of a substrate containing It can prevent the diffusion of impurities. Or, it can prevent the diffusion of impurities contained in glass or resin. It can be prevented. Or, it can prevent the diffusion of impurities that permeate the resin.

[0182] Furthermore, paper or wood can be used as the base material 510 or base material 770.

[0183] For example, a material having sufficient heat resistance to withstand heat treatment during the manufacturing process is used as the base material 510 or base It can be used in material 770. Specifically, it can be used to directly form transistors or capacitors, etc. A material that is heat-resistant to the heat applied during the manufacturing process is used for the base material 510 or base material 770. It is possible.

[0184] For example, an insulating film, transistor, or a process substrate that is heat resistant to the heat applied during the manufacturing process. This forms a capacitance, etc., and the formed insulating film, transistor, or capacitance, etc. is, for example, on a substrate 51 A method of transposing to 0 or base material 770 can be used. This allows for, for example, flexibility An insulating film, transistor, or capacitor can be formed on a substrate having the above properties.

[0185] Sealing material The sealing material 705 has a region sandwiched between the functional layer 520 and the substrate 770, and the functional layer 52 It has the function of bonding 0 and the base material 770 (see Figure 5(A)). Also, the sealing material 50 5 comprises a region sandwiched between the functional layer 520 and the substrate 510, and the functional layer 520 and the substrate It has the function of bonding material 510 together.

[0186] Inorganic materials, organic materials, or composite materials of inorganic and organic materials, etc., as sealing material 705 and sealing material It can be used with 505.

[0187] For example, an organic material such as a heat-meltable resin or a curable resin, encapsulant 705 and encapsulant It can be used with 505.

[0188] For example, reaction-curing adhesives, photocuring adhesives, thermosetting adhesives, and / or anaerobic adhesives. Organic materials such as fertilizers can be used in the sealing material 705 and sealing material 505.

[0189] Specifically, epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimi Resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyrate) Adhesives containing resins such as EVA (ethylene vinyl acetate) resin are used as sealing material 705. It can be used in the sealing material 505.

[0190] 《Structure KB》 Structure KB comprises a region sandwiched between the functional layer 520 and the base material 770. Body KB has the function of providing a predetermined gap between the functional layer 520 and the base material 770.

[0191] <Method for manufacturing the functional panel 700> The method for manufacturing the functional panel 700 comprises, for example, the following 18 steps.

[0192] In the first step, an N-type cladding layer 553N is formed on, for example, a sapphire substrate. do.

[0193] In the second step, the light-emitting layer 553EM is formed by superimposing it on the N-type cladding layer 553N. do.

[0194] In the third step, the P-type cladding layer 553P is formed by superimposing it on the light-emitting layer 553EM. do.

[0195] In the fourth step, the electrode 551(i,j) is placed on top of the P-type cladding layer 553P. To form.

[0196] In the fifth step, the electrode 551(i,j), the P-type cladding layer 553P and the light emission Layer 553EM is formed into a predetermined shape using an etching method.

[0197] In the sixth step, the insulating film 501A is formed so as to cover the electrode 551(i,j). ru.

[0198] In the seventh step, the insulating film 501A is formed into a predetermined shape, for example, by chemical polishing. To form.

[0199] In the eighth step, the insulating film 501B is formed on the insulating film 501A.

[0200] In the ninth step, the insulating film 501C is formed on the insulating film 501B.

[0201] In the tenth step, the transistor M21 and the insulating film 516 are connected to the insulating film 501C Form it on top.

[0202] In the 11th step, the opening including opening 591G is formed using an etching method. do.

[0203] In the 12th step, the transistor M21 and electrode 551(i,j) are electrically connected. Connect.

[0204] In the 13th step, insulating film 518 and insulating film 521 are placed on transistor M21. To form.

[0205] In the 14th step, the substrate 510 and the insulating film 521 are bonded together using the sealing material 505. Combine.

[0206] In step 15, for example, the sapphire substrate is removed from the N-type cladding layer 553N. Separate. Note that in step 15, for example, the laser lift-off method may be used. It is possible.

[0207] In the 16th step, the electrode 552 is shaped to overlap the N-type cladding layer 553N. To accomplish.

[0208] In the 17th step, the color conversion layer CC(G) is placed between the light-emitting layer 553EM and the electrode 552 It is formed so as to sandwich it.

[0209] In step 18, the substrate 770 and the color conversion layer CC(G) are sealed with a encapsulant 705. Attach and stick them together.

[0210] <Example configuration of the 700 function panel 5> The functional panel 700 described in this embodiment has pixels 702G(i,j) (Figure 4( See B) and Figure 23(A).

[0211] 《Example Configuration 1 for Pixel 702G(i,j)》 Pixel 702G(i,j) consists of element 550G(i,j), color conversion layer CC(G), and functional layer 5 It includes 20 (see Figure 23(A)).

[0212] 《Example Configuration of Element 550G(i,j) 1》 Element 550G(i,j) has a functional layer 520 between it and the color conversion layer CC(G), and element 550 G(i,j) has the function of emitting light, and element 550G(i,j) is gallium nitride include.

[0213] For example, a light-emitting diode can be used as element 550G(i,j). Specifically, A vertical light-emitting diode can be used as element 550G(i,j). Also, a blue light-emitting diode can be used. A light-emitting diode can be used as element 550G(i,j). The N-type cladding layer 553N is conductive. Therefore, the N-type cladding layer 553N is, The element 550G(i,j) and an adjacent element, for example, element 550B(i,j), are electrically connected. It can be continued. In other words, the N-type cladding layer 553N also functions as an electrode.

[0214] 《Example of Color Conversion Layer CC(G) Configuration 1》 The color conversion layer CC(G) converts the color of the light emitted by element 550G(i,j) to a different color. It has a function. For example, the light emitted by element 550G(i,j) passes through the functional layer 520. Then, it reaches the color conversion layer CC(G). Also, for example, element 550G(i,j) is blue light When emitting light, the color conversion layer CC(G) converts blue light into, for example, green light. This can be done. Furthermore, it is possible to form a color conversion layer CC(G) using photolithography. Yes, it is possible. Alternatively, for example, a structure KB can be formed using photolithography, and the structure A color conversion layer CC(G) is formed in the region surrounded by the fabricated body KB using an inkjet method. It is possible.

[0215] 《Example Configuration of Functional Layer 520 1》 The functional layer 520 comprises an insulating film 501 and a pixel circuit 530G(i,j).

[0216] The insulating film 501 is sandwiched between the pixel circuit 530G(i,j) and the element 550G(i,j). The insulating film 501 has a region and an opening 591G.

[0217] The pixel circuit 530G(i,j) is equipped with transistor M21, and transistor M21 is made of oxide It includes a semiconductor film. Also, transistor M21 has an aperture 591G, element 550G It is electrically connected to (i,j). For example, conductive film 512A is connected to transistor M21 and The electrodes 551(i,j) are electrically connected (see Figure 23(B)). Also, the conductive film 512 B electrically connects transistor M21 and conductive film ANO (see Figure 3).

[0218] Furthermore, a light-shielding layer may be provided between element 550G(i,j) and transistor M21. Furthermore, a material with light-shielding properties can be used for the conductive film 524. By providing this light-shielding layer... As a result, the light emitted from element 550G(i,j) irradiates transistor M21. It can prevent this from happening.

[0219] This embodiment can be appropriately combined with other embodiments shown herein. .

[0220] (Embodiment 2) In this embodiment, the configuration of a functional panel according to one aspect of the present invention is shown in Figures 16 to 20. I will explain while shining a light on it.

[0221] Figure 16 is a block diagram of a functional panel according to one embodiment of the present invention.

[0222] Figure 17(A) is a diagram illustrating the configuration of a functional panel according to one embodiment of the present invention, and shows the cutting line of Figure 16. Cross-sections of X1-X2, X3-X4, X9-X10 and a pair of pixels 703(i,j). This is a diagram. Also, Figure 17(B) shows a functional panel of one embodiment of the present invention, which is different from Figure 17(A). This diagram illustrates the structure, and Figure 17(C) is a different book from Figures 17(A) and 17(B). This is a diagram illustrating the configuration of a functional panel according to one embodiment of the invention.

[0223] Figure 18(A) is a diagram illustrating the configuration of a functional panel according to one embodiment of the present invention, and Figure 17(B) This is a cross-sectional view of pixel 702G(i,j). Figure 18(B) illustrates a portion of Figure 18(A). This is a cross-sectional view, and Figure 18(C) is a cross-sectional view illustrating another part of Figure 18(A).

[0224] Figure 19 is a block diagram of a functional panel according to one embodiment of the present invention.

[0225] Figure 20 is a diagram illustrating the configuration of a functional panel according to one embodiment of the present invention, and the cutting line X1- in Figure 19 This is a cross-sectional view of pixels X2, X3-X4, X9-X10, and a pair of pixels 703(i,j). ru.

[0226] <Example configuration of function panel 700 1> The functional panel 700 described in this embodiment has a functional layer 520B (Figure 17(A) See Figure 18(A).

[0227] 《Example Configuration of Functional Layer 520B》 The functional layer 520B includes contacts 519gb(j), a drive circuit SD, and an insulating film 521C. See Figure 18(A). Contact 519gb(j) is electrically connected to the drive circuit SD.

[0228] Furthermore, the functional layer 520B includes an insulating film 521D. The insulating film 521D is for the drive circuit SD and It includes a region sandwiched between insulating films 521C. For example, a film containing silicon and nitrogen is used as the insulating film. It can be used in 521D. This suppresses the diffusion of impurities into the drive circuit SD. Furthermore, these impurities may cause malfunctions.

[0229] The drive circuit SD includes transistor MD2, which contains elements from Group 14. It comprises a conductor. For example, a transistor formed on a single-crystal silicon substrate is called a transistor MD. It can be used in 2.

[0230] Transistor MD2 has semiconductor film 108, conductive film 104, conductive film 112A and conductive film 1 It is equipped with 12B (see Figure 18(C)).

[0231] The semiconductor film 108 has a region 108A that is electrically connected to the conductive film 112A, and the conductive film 112B The semiconductor film 108 includes region 108A and region 108B which are electrically connected. Region 108C is provided between regions 108B.

[0232] The conductive film 104 has a region that overlaps with region 108C, and the conductive film 104 has the function of a gate electrode. El.

[0233] The insulating film 106 includes a region sandwiched between the semiconductor film 108 and the conductive film 104. The film 106 functions as a gate insulating film.

[0234] The conductive film 112A has either the function of a source electrode or a drain electrode, and the conductive film 11 2B has the function of either a source electrode or a drain electrode, and the other of the other.

[0235] 《Example Configuration of Functional Layer 520 1》 The functional layer 520 includes an insulating film 521B and a contact 519ga(j) (see Figure 18(A)). ).

[0236] The insulating film 521B includes a region sandwiched between the insulating film 521C and the insulating film 521. The film 521B includes a region that is bonded to the insulating film 521C.

[0237] For example, an insulating film containing silicon and oxygen is used for insulating film 521B and insulating film 521C. This allows for, for example, the insulating film 521B to be bonded using a surface activation bonding method. The insulating film 521C can be bonded. Alternatively, the functional layer 520 and the functional layer 520 B can be glued together.

[0238] Contact 519ga(j) is electrically connected to contact 519gb(j), and contact 519ga(j ) is electrically connected to the pixel circuit 530G(i,j).

[0239] For example, metal can be used for contacts 519ga(j) and 519gb(j). Specifically, copper or gold is used for contacts 519ga(j) and 519gb(j). It is possible to be there.

[0240] This allows, for example, using a surface activation bonding method, contact 519ga(j) and contact 51 9gb(j) can be electrically connected. Alternatively, the conductive film S1g(j) can be used as a driving circuit. It can be electrically connected to the SD card. Alternatively, using the SD card as a drive circuit, for example, pixel signals We can supply the number. Or, for example, a transient using single-crystal silicon as a semiconductor. The st can be used in the drive circuit SD. Or, for example, pixel 702G(i,j) The drive circuit SD can be placed on top of it. Alternatively, the external dimensions of the function panel can be made smaller. It is possible to reduce the number of parts. As a result, convenience, usefulness or reliability This allows us to provide novel functional panels with superior performance.

[0241] <Example configuration of the 700 function panel 2> Another configuration of a functional panel according to one aspect of the present invention will be described with reference to Figure 17(B). Note that in the example configuration 2 of the functional panel, the functional layer 520B is equipped with a drive circuit GD and the function The fact that layer 520B has terminal 519B is explained in the function panel with reference to Figure 17(A). This is different. Here, we will explain the differences in detail and how to use a similar structure. The above explanation will be used to describe the parts that can be cut.

[0242] For example, the drive circuit GD can use a transistor that includes a semiconductor containing an element from group 14. This is possible. Specifically, by using a transistor made of single-crystal silicon in the drive circuit GD. This allows for miniaturization of the drive circuit GD. Alternatively, the external dimensions of the functional panel can be reduced. It can be cut.

[0243] <Example configuration of the 700 function panel 3> Another configuration of a functional panel according to one aspect of the present invention will be described with reference to Figure 17(C). Note that in the example configuration 3 of the functional panel, the functional layer 520B is equipped with a drive circuit GD and terminals. The location of 519B is different from that of the function panel, which will be explained with reference to Figure 17(A).

[0244] <Example configuration of the 700 function panel 4> Another configuration of a functional panel according to one aspect of the present invention will be described with reference to Figures 19 and 20. I will reveal it.

[0245] Note that in the example configuration 4 of the functional panel, the functional layer 520 is equipped with a drive circuit DX, and the functional layer 520 The fact that B has a drive circuit DY and that element 550B(i,j) is passively driven is, This is different from the function panel explained with reference to Figure 17(A).

[0246] This embodiment can be appropriately combined with other embodiments shown herein. .

[0247] (Embodiment 3) In this embodiment, the configuration of a functional panel according to one aspect of the present invention is shown in Figures 5(A) and 5 (B) will be explained with reference.

[0248] <Example configuration of function panel 700 1> The functional panel 700 has a pair of pixels 703(i,j) It comprises pixels 702G(i,j) and 702B(i,j) (see Figure 1(B)). .

[0249] 《Example of pixel 702B(i,j) configuration 1》 Pixel 702B(i,j) has the function of displaying the light emitted by element 550B(i,j). Element 550B(i,j) emits light of the same color as the light emitted by element 550G(i,j). It has the function of doing so. For example, elements 550B(i,j) and 550G(i,j) are, It has the ability to emit blue light.

[0250] 《Example configuration 2 for pixel 702G(i,j)》 Pixel 702G(i,j) is equipped with a color conversion layer CC(G). The color conversion layer CC(G) is element 55 It has a function to convert the color of the light emitted by 0G(i,j) to a different color.

[0251] This allows element 550B(i,j) to be formed using the same process as element 550G(i,j). It is possible to do so. Alternatively, using pixel 702G(i,j), pixel 702B(i,j) is It can display different colors. As a result, it offers new advantages in terms of convenience, usefulness, or reliability. It can provide a functional panel.

[0252] 《Example Configuration of Element 550G(i,j) 1》 Element 550G(i,j) consists of electrode 551G(i,j), electrode 552, and a light-emitting material. It includes a layer 553 (see Figure 5(A)). Furthermore, the layer 553 containing the luminescent material is an electrode. It includes a region sandwiched between 551G(i,j) and electrode 552.

[0253] For example, a mini LED can be used as element 550G(i,j). Specifically, the light The area of ​​the injection region is 1 mm 2 The following is preferably 50,000 μm 2 The following is more 30,000 μm 2 More preferably 10,000 μm 2 Below, 200μm 2 That's all. A mini LED can be used as element 550G(i,j).

[0254] Alternatively, a micro-LED can be used as element 550G(i,j). Specifically, The area of ​​the region that emits light is 200 μm². 2 Less than 60 μm, preferably 60 μm 2 The following are more preferable is 15 μm 2 or less, more preferably 5 μm 2 or less, 3 μm 2 or more of the micro LED can be used for the element 550G(i,j).

[0255] [Configuration Example 1 of Layer 553 Containing Light-Emitting Material] The layer 553 containing a light-emitting material includes, for example, a P-type cladding layer 553P, an N-type cladding layer 553N, and a light-emitting layer 553EM. The light-emitting layer 553EM includes a region sandwiched between the P-type cladding layer 553P and the N-type cladding layer 553N. Thereby, carriers can be recombined in the light-emitting layer 553EM. As a result, light emission accompanying the recombination of carriers can be obtained.

[0256] For example, a laminated material laminated to emit blue light, a laminated material laminated to emit green light or a laminated material laminated to emit red light can be used for pixels. Specifically, a gallium-phosphorus compound, a gallium-arsenic compound, a gallium-aluminum-arsenic compound, an aluminum-gallium-indium-phosphorus compound, an indium-gallium-nitride compound, etc. can be used for pixels. In particular, an element that emits blue light can be used for the element 550G(i,j) and the element 550B(i,j).

[0257]

[0258] Thereby, the element 550G(i,j) and the element 550B(i,j) can be formed in the same process.

[0258] Also, an element that emits ultraviolet light can be used for the element 550G(i,j) and the element 550B(i,j). A color conversion layer is arranged so as to overlap the element 550B(i,j).​​ It can convert ultraviolet light into blue light.

[0259] Color conversion layer The color conversion layer comprises a region sandwiched between the substrate 770 and the element 550G(i,j).

[0260] For example, using a material that emits light with a wavelength longer than the wavelength of the incident light in the color conversion layer. This is possible. For example, a material that absorbs blue light or ultraviolet light and converts it into green light and emits it. Materials that absorb blue light or ultraviolet light and convert it into red light and emit it, or materials that absorb ultraviolet light A material that absorbs light, converts it into blue light, and emits it can be used in the color conversion layer. For example, fluorescence The body can be used as a color conversion layer. Specifically, quantum dots with a diameter of several nanometers can be used as a color conversion layer. It can be used. This allows for the emission of light with a narrow half-width spectrum. It can emit light with high saturation.

[0261] <Example configuration of the 700 function panel 2> The functional panel 700 includes a functional film 770P, etc. (see Figure 5(A)).

[0262] 《Functional membrane 770P, etc.》 The functional film 770P has a region that overlaps with element 550G(i,j).

[0263] For example, anti-reflective films, polarizing films, phase difference films, light-diffusing films, or light-gathering films. Films and the like can be used as the functional film 770P.

[0264] For example, an anti-reflective coating with a thickness of 1 μm or less can be used on the functional film 770P. The laminate consists of three or more dielectric layers, preferably five or more, and more preferably fifteen or more layers. The film can be used as the functional film 770P. This preferably results in a reflectance of 0.5% or less. This can be suppressed to 0.08% or less.

[0265] For example, a circularly polarizing film can be used in the functional film 770P.

[0266] In addition, it has an antistatic coating to suppress the adhesion of dust, a water-repellent coating to make it difficult for dirt to adhere, and dirt Oil-repellent coating to prevent adhesion, anti-reflective coating, matte finish coating ( Anti-glare film, hard coat film that suppresses the occurrence of scratches during use, and repairs existing scratches. Self-healing films and the like can be used in the functional film 770P.

[0267] This embodiment can be appropriately combined with other embodiments shown herein. .

[0268] (Embodiment 4) In this embodiment, the configuration of a functional panel according to one aspect of the present invention will be described with reference to Figure 7. I will reveal it.

[0269] Figure 7 is a block diagram illustrating the configuration of a functional panel according to one embodiment of the present invention.

[0270] <Example configuration of function panel 700 1> The functional panel 700 described in this embodiment has a region 231 (see Figure 7).

[0271] 《Example of configuration for area 231》 Region 231 is a group of pixels 703(i,1) to a group of pixels 703(i,n) It also comprises a set of pixels 703(1,j) or a set of pixels 703(m,j) in another group. Region 231 comprises conductive film G1(i) and conductive film S1g(j).

[0272] A group of pixels 703(i,1) or a group of pixels 703(i,n) are arranged in the row direction (in the figure) Arranged in the direction indicated by arrow R1, a group of pixels 703(i,1) to a group of pixels 7 03(i,n) contains a pair of pixels 703(i,j).

[0273] Furthermore, a group of pixels 703(i,1) to a group of pixels 703(i,n) are coated with conductive film G It is electrically connected to 1(i). Also, a group of pixels 703(i,1) or a group of pixels Element 703(i,n) is electrically connected to the conductive film G2(i).

[0274] Another group of pixels, one set 703(1,j) to one set 703(m,j), intersects with the row direction. Arranged in the direction of the column (indicated by arrow C1 in the figure), and one set of pixels 703 of the other group ( 1,j) or a pair of pixels 703(m,j) includes a pair of pixels 703(i,j).

[0275] Furthermore, one set of pixels 703(1,j) to one set of pixels 703(m,j) in another group are conductive. It is electrically connected to the film S1g(j). Also, another group of pixels 703(1,j) Each pair of pixels 703(m,j) is electrically connected to the conductive film S2g(j).

[0276] This allows image information to be supplied to multiple pixels. Alternatively, it can be taken from multiple pixels. Image information can be acquired. As a result, novel technologies with superior convenience, usefulness, or reliability can be developed. A functional panel can be provided.

[0277] 《Example of configuration for area 231 2》 Region 231 comprises, for example, multiple sets of pixels, each containing 600 or more pixels per inch. Multiple pairs of pixels include a pair of pixels 703(i,j). Preferably, per inch 1000 or more, more preferably 3000 or more per inch, even more preferably 1 inch It has a set of more than 6000 pixels per inch. This allows for, for example, screen dots. The effect can be reduced.

[0278] 《Example of configuration for area 231 3》 Region 231 contains multiple sets of pixels arranged in a matrix. For example, region 231 has 7600 pixels. The above set of pixels is arranged in the row direction, and region 231 has more than 4300 sets of pixels arranged in the column direction. It is equipped with 7680 pixels in a row and 4320 pixels in a row. It is provided in the column direction.

[0279] This allows for the display of high-resolution images. As a result, it offers superior convenience and reliability. This allows us to provide a new functional panel.

[0280] This embodiment can be appropriately combined with other embodiments shown herein. .

[0281] (Embodiment 5) In this embodiment, the configuration of a display device according to one aspect of the present invention will be described with reference to Figure 8. do.

[0282] Figure 8(A) is a block diagram of a display device according to one embodiment of the present invention, and Figures 8(B) to 8(D) This is a perspective view illustrating the appearance of a display device according to one embodiment of the present invention.

[0283] <Example of display device configuration> The display device described in this embodiment includes a control unit 238 and a function panel 700. See Figure 8(A).

[0284] 《Example of configuration of the control unit 238 1》 The control unit 238 is supplied with image information VI and control information CI. For example, the clock signal Alternatively, timing signals and other information can be used as control information (CI).

[0285] The control unit 238 generates information based on the image information VI, and the control unit 238 generates information based on the control information CI The control unit 238 then generates a control signal. The control unit 238 also supplies information and control signals.

[0286] For example, the information includes 8 bits or more, preferably 12 bits or more, for grayscale levels. Also, for example, The clock signal or start pulse of the shift register used in the drive circuit is used as a control signal. It can be used for this purpose.

[0287] 《Example of configuration of control unit 238 2》 For example, the stretching circuit 234 and the image processing circuit 235 can be used in the control unit 238. .

[0288] 《Extension circuit 234》 The decompression circuit 234 has the function of decompressing the image information VI that is supplied in a compressed state. The decompression circuit 234 includes a memory unit. The memory unit stores, for example, the decompressed image information. To possess the ability.

[0289] Image processing circuit 235 The image processing circuit 235 includes, for example, a memory area. The memory area stores, for example, image information VI. It has the function of storing the information contained within it.

[0290] The image processing circuit 235 corrects the image information VI based on a predetermined characteristic curve, for example, to process the information. It has the function of generating and the function of supplying information.

[0291] 《Example Configuration of Function Panel 700 1》 The function panel 700 is supplied with information and control signals. For example, in Embodiments 1 to 1 The functional panel 700 described in any one of the four forms can be used.

[0292] 《Example of pixel 703(i,j) configuration 3》 Pixel 703(i,j) is displayed based on the information.

[0293] This allows image information VI to be displayed using element 550G(i,j). As a result, it is possible to provide a novel display device that is superior in convenience, usefulness, or reliability. Alternatively, for example, information terminals (see Figure 8(B)) or video display systems (see Figure 8(C)). They can provide a computer (see Figure 8(D)), etc.

[0294] 《Example Configuration of Function Panel 700 2》 For example, the function panel 700 includes a drive circuit and a control circuit.

[0295] 《Drive Circuit》 The drive circuit operates based on the control signal. By using the control signal, multiple drive circuits can be operated. The operation can be synchronized (see Figure 8(A)).

[0296] For example, the drive circuit GD can be used in the function panel 700. The drive circuit GD controls It is equipped with the function of receiving a signal and supplying a first selection signal.

[0297] Furthermore, for example, the drive circuit SD can be used in the function panel 700. The drive circuit SD is It can receive control signals and information, and supply image signals.

[0298] Control circuit A control circuit has the function of generating and supplying control signals. For example, a clock signal or a tie signal. MING signals and the like can be used as control signals.

[0299] Specifically, a control circuit formed on a rigid substrate can be used in a functional panel. Alternatively, a control circuit formed on a rigid substrate can be constructed using a flexible printed circuit board. It can be electrically connected to the control unit 238.

[0300] For example, the timing controller 233 can be used in the control circuit.

[0301] This embodiment can be appropriately combined with other embodiments shown herein. .

[0302] (Embodiment 6) In this embodiment, the configuration of an input / output device according to one aspect of the present invention will be described with reference to Figure 9. I will reveal it.

[0303] Figure 9 is a block diagram illustrating the configuration of an input / output device according to one embodiment of the present invention.

[0304] <Example of Input / Output Device Configuration 1> The input / output device described in this embodiment has an input unit 240 and a display unit 230 (Figure See 9).

[0305] 《Example of the configuration of the display unit 230 1》 The display unit 230 includes a function panel 700. For example, in Embodiments 1 to 4 Any of the function panels 700 described in one of the above can be used for the display unit 230. A configuration having section 240 and display section 230 can be called a functional panel 700TP.

[0306] 《Example of the configuration of the input unit 240 1》 The input unit 240 includes a detection area 241. The input unit 240 is adjacent to the detection area 241. It detects.

[0307] The detection area 241 includes an area that overlaps with a pair of pixels 703(i,j).

[0308] This allows the display unit 230 to display image information while the area overlapping with the display unit 230 is displayed. It can detect objects that are close to it. Alternatively, it can detect a finger or other object that is brought close to the display unit 230. It can be used as an interface to input location information. Alternatively, the location information can be displayed on the display unit 230. It can be associated with the image information to be displayed. As a result, convenience, usefulness or reliability This allows us to provide a superior, novel input / output device.

[0309] 《Example of configuration of detection area 241 1》 The detection area 241 includes, for example, one or more detectors.

[0310] The detection area 241 includes a group of detectors 802(g,1) to 802(g,q) and other It has a group of detectors 802(1,h) to detectors 802(p,h). Note that g is 1 The integers are greater than or equal to p and less than or equal to q, where h is an integer between 1 and q, and p and q are integers greater than or equal to 1. be.

[0311] A group of detectors 802(g,1) through 802(g,q) are detectors 802(g,h) It includes and is arranged in the row direction (the direction indicated by arrow R2 in the figure), and is electrically connected to wiring CL(g). It continues. Note that the direction indicated by arrow R2 may be the same as the direction indicated by arrow R1. And they can be different.

[0312] Furthermore, another group of detectors 802(1,h) to detectors 802(p,h) are detectors 802 (g,h) is included and arranged in the column direction intersecting the row direction (indicated by arrow C2 in the figure), It is electrically connected to wiring ML(h).

[0313] Detector The detector has the function of detecting nearby pointers. For example, when a finger or stylus pen is placed near a pointer... It can be used in interfaces. For example, a metal piece or coil can be used in a stylus pen. It is possible.

[0314] Specifically, capacitive proximity sensors, electromagnetic induction proximity sensors, and optical proximity sensors Sensors such as resistive proximity sensors can be used as detectors.

[0315] Furthermore, multiple types of detectors can be used in combination. For example, a detector that detects fingers and a detector that detects s It can be used in conjunction with a detector that detects the tyrus pen.

[0316] This allows us to determine the type of pointer. Or, the type of pointer that has been determined. Based on this, different instructions can be associated with detection information. Specifically, to the pointer If it is determined that a finger was used, the detection information can be associated with the gesture. If it is determined that a stylus pen was used for the pointer, the detection information is associated with the drawing process. It is possible to do so.

[0317] Specifically, a proximity sensor using a capacitive, pressure-sensitive, or optical method is used to detect a finger. Alternatively, a stylus can be used with an electromagnetic induction or optical proximity sensor. It can detect a pen.

[0318] 《Example of the configuration of the input unit 240 2》 The input section 240 includes an oscillator circuit OSC and a detection circuit DC (see Figure 9).

[0319] The oscillator circuit OSC supplies a search signal to the detector 802(g,h). For example, a square wave, a sawtooth wave, etc. Waves such as sine waves, triangular waves, and sine waves can be used as search signals.

[0320] The detector 802(g,h) measures the distance to the pointer adjacent to the detector 802(g,h) It generates and supplies a detection signal that changes based on the search signal.

[0321] The detection circuit DC supplies input information based on the detection signal.

[0322] This makes it possible to detect the distance from the adjacent pointer to the detection area 241. Alternatively, the position where the pointer is closest within the detection area 241 can be detected. .

[0323] This embodiment can be appropriately combined with other embodiments shown herein. .

[0324] (Embodiment 7) In this embodiment, the configuration of an information processing device according to one aspect of the present invention is shown in Figures 10 to 12. I will explain while referring to it.

[0325] Figure 10(A) is a block diagram illustrating the configuration of an information processing device according to one embodiment of the present invention. Figures 0(B) and 10(C) are projection views illustrating an example of the external appearance of an information processing device.

[0326] Figure 11 is a flowchart illustrating a program according to one embodiment of the present invention. Figure 11(A) This is a flowchart illustrating the main processing of a program according to one aspect of the present invention, and Figure 11( B) is a flowchart explaining interrupt handling.

[0327] Figure 12 is a diagram illustrating a program according to one embodiment of the present invention. Figure 12(A) is the present invention. This is a flowchart illustrating the interrupt handling of one aspect of a program. Also, Figure 12(B) Figure 12(C) is a schematic diagram illustrating the operation of an information processing device, and Figure 12(C) is an embodiment of the present invention. This is a timing chart illustrating the operation of an information processing device.

[0328] <Example of Information Processing Device Configuration 1> The information processing device described in this embodiment includes an arithmetic unit 210 and an input / output device 220. (See Figure 10(A)). Note that the input / output device 220 is electrically connected to the arithmetic unit 210. The information processing device 200 may also be equipped with a housing (Figures 10(B) and 10(B)). 10(C)).

[0329] 《Example Configuration of the Calculation Unit 210 1》 The arithmetic unit 210 is supplied with input information II or detection information DS. The arithmetic unit 210 receives input Based on Information II or Detection Information DS, control information CI and image information VI are generated, and control We will supply your CI (Corporate Identity) and VI (Visual Identity) information.

[0330] The arithmetic unit 210 comprises an arithmetic unit 211 and a storage unit 212. It includes a transmission line 214 and an input / output interface 215.

[0331] The transmission line 214 is connected to the arithmetic unit 211, the storage unit 212, and the input / output interface 215. It is electrically connected.

[0332] 《Calculation section 211》 The arithmetic unit 211 includes, for example, a function for executing a program.

[0333] 《Storage section 212》 The storage unit 212 stores, for example, programs executed by the arithmetic unit 211, initial information, configuration information, or It has a function to store images and other data.

[0334] Specifically, hard disks, flash memory, or transistors containing oxide semiconductors. Memory and other components using this technology can be used.

[0335] Input / output interface 215, transmission path 214 The input / output interface 215 is equipped with terminals or wiring to supply and receive information. It has the function of being able to electrically connect to the transmission line 214. It can be electrically connected to device 220.

[0336] The transmission line 214 is equipped with wiring and has the function of supplying and receiving information. For example, input It can be electrically connected to the output interface 215. Also, the calculation unit 211, It can be electrically connected to the memory unit 212 or the input / output interface 215.

[0337] 《Example Configuration of Input / Output Device 220》 The input / output device 220 supplies input information II and detection information DS. Control information CI and image information VI are supplied (see Figure 10(A)).

[0338] For example, keyboard scan codes, location information, button operation information, audio information, or images. Image information, etc., can be used as input information II. Alternatively, for example, the information processing device 200 can Illumination information, orientation information, acceleration information, orientation information, pressure information, temperature information, etc. of the environment in which it is used. Alternatively, humidity information and other data can be used in the detection information DS.

[0339] For example, signals to control brightness, saturation, and hue when displaying image information VI. The signal can be used in the control information CI. Alternatively, the display of part of the image information VI can be used. The changing signals can be used in the control information (CI).

[0340] The input / output device 220 includes a display unit 230, an input unit 240, and a detection unit 250. For example The input / output device described in Embodiment 6 can be used as the input / output device 220. Furthermore, the input / output device 220 may be equipped with a communication unit 290.

[0341] [Example of the configuration of the display unit 230] The display unit 230 displays image information VI based on the control information CI. For example, in the embodiment The display device described in section 5 can be used in the display unit 230.

[0342] [Example configuration of input unit 240] The input unit 240 generates input information II. For example, the input unit 240 supplies position information. It has a function.

[0343] For example, a human interface can be used in the input unit 240 (Figure 10( See A). Specifically, keyboard, mouse, touch sensor, microphone or camera, etc. It can be used in the input section 240.

[0344] Furthermore, a touch sensor having an area that overlaps with the display unit 230 can be used. An input / output device equipped with a touch sensor having an area overlapping the display unit 230 and the display unit 230, It can be called a touch panel or touchscreen.

[0345] For example, the user can use their finger touching the touch panel as a pointer to perform various gestures ( You can perform actions such as tapping, dragging, swiping, or pinching in.

[0346] For example, the arithmetic unit 210 analyzes information such as the position or trajectory of a finger that is in contact with the touch panel. And, when the analysis results satisfy predetermined conditions, it is assumed that a predetermined gesture has been supplied. Yes, it is possible. This allows the user to use a predetermined gesture that is pre-associated with a given gesture. Operation commands can be supplied using the gesture.

[0347] For example, the user can use a "scroll command" to change the display position of image information. It can be supplied using a gesture of moving a finger along the touch panel while in contact with the touch panel. .

[0348] Additionally, the user can pull out the navigation panel NP at the end of area 231 to display " The "drag command" is supplied using a gesture of moving a finger touching the edge of area 231. (See Figure 10(C)). Additionally, the user can index the navigation panel NP. Image IND, part of other pages, or thumbnail images TN of other pages, in a predetermined order. The "leaf-through command" displays the pages one by one, and the gesture of moving the position where you press your finger firmly is used. It can be supplied using a dispenser, or by applying pressure with a finger. You can turn the pages of an e-reader just like flipping through the pages of a physical book. Alternatively, using the thumbnail image TN or index image IND, you can access the designated page. You can search for it.

[0349] [Example configuration of detection unit 250] The detection unit 250 generates detection information DS. For example, the detection unit 250 generates information processing device 200 It is equipped with a function to detect the illuminance of the environment in which it is used and a function to supply illuminance information.

[0350] The detection unit 250 has the function of detecting the surrounding conditions and supplying detection information. Specifically, Illuminance information, attitude information, acceleration information, orientation information, pressure information, temperature information, or humidity information, etc. It can be provided.

[0351] For example, photodetectors, attitude detectors, accelerometers, compass sensors, GPS (Global Power System) (Operation System) Signal receiving circuit, pressure-sensitive switch, pressure sensor, temperature Sensors, humidity sensors, cameras, etc., can be used in the detection unit 250.

[0352] 《Communications Section 290》 The communications unit 290 has the function of supplying information to the network and acquiring information from the network. Prepare.

[0353] Cabinet The enclosure also has the function of housing the input / output device 220 or the arithmetic unit 210. Alternatively, The enclosure has a function to support the display unit 230 or the arithmetic unit 210.

[0354] This allows for the generation of control information CI based on input information II or detection information DS. This is possible. Alternatively, based on input information II or detection information DS, image information VI can be displayed. It is possible. Alternatively, the information processing device may, in the environment in which the information processing device is used, The information processing device can operate by sensing the intensity of light it receives. Alternatively, information processing The user of the device can select the display method. As a result, convenience, usefulness, or reliability This enables the provision of a novel information processing device with superior reliability.

[0355] Furthermore, these configurations cannot be clearly separated, and one configuration may also serve as another configuration. This may include a part of it. For example, a touch panel with a touch sensor superimposed on the display panel. It serves as both a display unit and an input unit.

[0356] 《Example Configuration of the Calculation Unit 210 2》 The computing unit 210 includes an artificial intelligence unit 213 (see Figure 10(A)).

[0357] The artificial intelligence unit 213 is supplied with input information II or detection information DS, and the artificial intelligence unit 213 receives input Based on force information II or detection information DS, control information CI is inferred. Also, the artificial intelligence department... 213 supplies control information CI.

[0358] This allows for the generation of control information CIs that are displayed in a way that is perceived as favorable. It can be displayed in a way that makes it seem preferable or comfortable. It is possible to generate control information CIs that are displayed in a way that makes it feel comfortable. It can be displayed in a way that makes it feel convenient, useful, or reliable. This enables the provision of a novel information processing device.

[0359] [Natural language processing on input information II] Specifically, the artificial intelligence unit 213 performs natural language processing on the input information II, and then processes the entire input information II. One feature can be extracted from the input information II. For example, the artificial intelligence unit 213 takes the input information II into account. It is possible to infer and define the emotions and other factors that have been observed as characteristics. Furthermore, it is possible to empirically determine which characteristics are suitable. It can infer the colors, patterns, or fonts that are perceived. Also, Artificial Intelligence Unit 213 This generates information that specifies the color, pattern, or font of the text, and information that specifies the color or pattern of the background. This can be used for control information CI.

[0360] Specifically, the artificial intelligence unit 213 performs natural language processing on the input information II and extracts the information contained in the input information II. It is possible to extract some of the words. For example, the artificial intelligence unit 213 can extract grammatical errors, It can extract misrepresentations or expressions containing emotions. In addition, the artificial intelligence unit 213 extracts Generate and control information that displays a portion of the output in a different color, pattern, or font from other portions. It can be used for informational corporate identity (CI).

[0361] [Image processing for input information II] Specifically, the artificial intelligence unit 213 processes the input information II as an image and extracts one from the input information II. Features can be extracted. For example, the artificial intelligence unit 213 can extract input information II from a photograph. Age, indoor or outdoor location, day or night, etc. can be inferred and used as characteristics. Infer a color tone that is empirically perceived as suitable, and control information for using that color tone in display. It is possible to generate a CI (Critical Information). Specifically, it can generate the colors used to represent shades of gray (for example, full color). Information specifying (such as black and white or brownish-red) can be used in the control information CI.

[0362] Specifically, the artificial intelligence unit 213 processes the input information II as an image, and the input information II contains It is possible to extract a portion of an image. For example, a boundary can be placed between a portion of the extracted image and another portion. It is possible to generate control information CI that displays a portion of the extracted image. Specifically, it is possible to surround a portion of the extracted image. It is possible to generate control information CIs that display a rectangle.

[0363] [Inference using detection information DS] Specifically, the artificial intelligence unit 213 can generate inferences using the detection information DS. Alternatively, based on reasoning, so that the user of the information processing device 200 feels comfortable. It can generate control information CI.

[0364] Specifically, based on the ambient illuminance, the artificial intelligence unit 213 determines that the display brightness is comfortable. It is possible to generate control information CI to adjust the display brightness so that it feels like the display is brighter. Alternatively, the artificial intelligence unit 213 determines that the size is perceived as comfortable based on environmental noise, etc. This allows for the generation of control information (CI) to adjust the volume.

[0365] The display unit 230 supplies a clock signal or timing signal to the control unit 238. These can be used in the control information CI. Alternatively, they can be supplied to the control unit provided in the input unit 240. Clock signals or timing signals can be used as control information CI.

[0366] <Example of Information Processing Device Configuration 2> Figures 11(A) and 11(B) show another configuration of an information processing device according to one embodiment of the present invention. I will explain while referring to it.

[0367] "program" A program according to one aspect of the present invention has the following steps (see Figure 11(A)).

[0368] [Step 1] In the first step, the settings are initialized (see Figure 11(A)(S1)).

[0369] For example, predetermined image information to be displayed at startup, and a predetermined mode for displaying said image information, Information specifying a predetermined display method for displaying the image information is obtained from the storage unit 212. Specifically, this involves using one still image or another moving image to create a predetermined image. Yes, it is possible. Furthermore, the first mode or the second mode can be used as a predetermined mode.

[0370] [Step 2] In the second step, interrupt handling is enabled (see Figure 11(A)(S2)). An arithmetic unit that is enabled to handle interrupts can perform interrupt processing in parallel with the main processing. Yes, it can. The arithmetic unit, having returned to the main process from the interrupt handler, will process the result obtained from the interrupt handler. This can be reflected in the main processing.

[0371] Furthermore, when the counter value is at its initial value, the arithmetic unit is prompted to perform an interrupt. When returning from the program, the counter may be set to a value other than its initial value. This allows the program to... It is possible to have interrupt processing always run after startup.

[0372] [Step 3] In the third step, a predetermined selected in the first step or interrupt processing. The image information is displayed using the mode or a predetermined display method (see Figure 11(A)(S3)). ). Note that the specified mode identifies the mode in which information is displayed, and the specified display method displays the information. Identify the method for doing so. Also, for example, it can be used for information that displays image information VI. .

[0373] For example, one method of displaying image information VI can be associated with a first mode. Alternatively, other methods for displaying image information VIs can be associated with the second mode. This allows you to select the display method based on the selected mode.

[0374] Mode 1 Specifically, a selection signal is supplied to one scan line at a frequency of 30 Hz or higher, preferably 60 Hz or higher. A method of supplying and displaying based on a selection signal can be associated with the first mode.

[0375] For example, if a selection signal is supplied at a frequency of 30 Hz or higher, preferably 60 Hz or higher, the moving image It can display the movement smoothly.

[0376] For example, if the image is updated at a frequency of 30Hz or higher, preferably 60Hz or higher, the user's operation The image changes to smoothly follow the user's actions and is displayed on the information processing device 200 that the user is operating. It can be shown.

[0377] Mode 2 Specifically, a frequency of less than 30 Hz, preferably less than 1 Hz, and more preferably less than once per minute. A method of supplying a selection signal to one scan line at a time and displaying based on the selection signal is called a second mode. It can be associated with "do".

[0378] A selection signal at a frequency of less than 30 Hz, preferably less than 1 Hz, and more preferably less than once per minute. By supplying this, a display with reduced flicker or blinking can be achieved. Also, Power consumption can be reduced.

[0379] For example, if the information processing device 200 is used as a clock, it will be used at a frequency of once per second or once per minute. The display can be updated based on frequency, etc.

[0380] [Step 4] In the fourth step, if a termination command is supplied, proceed to the fifth step, and the termination command If it is not supplied, choose to proceed to the third step (Figure 11(A)(S4)). reference).

[0381] For example, the termination command supplied during interrupt handling may be used for the decision.

[0382] [Step 5] In the fifth step, the process ends (see Figure 11(A)(S5)).

[0383] Interrupt handling Interrupt handling comprises the following steps 6 through 8 (see Figure 11(B)). .

[0384] [Step 6] In the sixth step, for example, the information processing device 200 is used with the detection unit 250. The illuminance of the environment is detected (see Figure 11(B)(S6)). Note that instead of the illuminance of the environment, the environmental illuminance is detected. The color temperature and chromaticity of the ambient light may also be detected.

[0385] [Step 7] In the seventh step, the display method is determined based on the detected illuminance information (Figure 11(B (See S7). For example, make sure the display brightness is not too dark or too bright. We have decided on this.

[0386] Furthermore, if the color temperature or chromaticity of the ambient light is detected in step 6, the display will You can adjust the color.

[0387] [Step 8] In the eighth step, the interrupt processing is terminated (see Figure 11(B)(S8)).

[0388] <Example 3 of Information Processing Device Configuration> Another configuration of an information processing device according to one aspect of the present invention will be described with reference to Figure 12.

[0389] Figure 12(A) is a flowchart illustrating a program according to one embodiment of the present invention. (A) is a flowchart that explains an interrupt process different from the interrupt process shown in Figure 11(B). It is a chart.

[0390] In addition, the configuration example 3 of the information processing device changes the mode based on a predetermined event that is supplied. The interrupt handling has a step that can be explained with reference to Figure 11(B). This process is different. Here, we will explain the differences in detail and how to use a similar configuration. The above explanation will be used to describe the parts where this is possible.

[0391] Interrupt handling Interrupt handling comprises the following steps 6 through 8 (see Figure 12(A)). .

[0392] [Step 6] In step 6, if a predetermined event is supplied, proceed to step 7. If the specified event is not supplied, proceed to step 8 (Figure 12(A)(U6) (See reference). For example, using whether or not a specific event was supplied during a specified period as a condition. This is possible. Specifically, 5 seconds or less, 1 second or less, or 0.5 seconds or less, preferably 0.1 seconds or less. The predetermined period can be a period longer than 0 seconds.

[0393] [Step 7] In the seventh step, change the mode (see Figure 12(A)(U7)). Specifically, If you selected the first mode, select the second mode, and then select the second mode. If so, select the first mode.

[0394] For example, the display mode can be changed for a portion of the display unit 230. In particular, the display unit 230 includes drive circuits GDA, GDB, and GDC. The display mode can be changed in the region where one drive circuit supplies the selection signal. See Figure 12(B).

[0395] For example, in the input section 240 located in the region where the drive circuit GDB supplies the selection signal, When a predetermined event is supplied, the drive circuit GDB supplies a selection signal to the display area. The code can be changed (see Figures 12(B) and 12(C)). Specifically, the instructions In response to a "tap" event supplied to the touch panel using the above, the drive circuit GDB supplies The frequency of the selection signal can be changed.

[0396] The signal GCLK is a clock signal that controls the operation of the drive circuit GDB, and the signal PWC Signals 1 and PWC2 are pulse width control signals that control the operation of the drive circuit GDB. The GDB circuit selects a signal based on signals GCLK, PWC1, PWC2, etc. This is supplied to conductive film G2(m+1) to conductive film G2(2m).

[0397] This means, for example, that the drive circuit GDA and drive circuit GDC supply selection signals. The drive circuit GDB can supply the selection signal. Alternatively, the drive circuit GDA and Without changing the display in the area where the drive circuit GDC supplies the selection signal, the drive circuit GDB selects The display of the area supplying the selection signal can be updated. Alternatively, the power consumed by the drive circuit can be updated. It can be suppressed.

[0398] [Step 8] In the eighth step, the interrupt processing is terminated (see Figure 12(A)(U8)). Interrupt handlers may be repeatedly executed during the period in which the main process is running.

[0399] 《Scheduled Events》 For example, "clicks" and "drags" that are supplied using a pointing device such as a mouse. Events such as using a finger or other object as a pointer to input data to a touch panel, such as "tap" and "drag". Events such as "grab" or "swipe" can be used.

[0400] Also, for example, the position of the slider bar pointed to by the pointer, the swipe speed, the drag speed. Arguments to commands associated with a given event can be provided using degrees, etc.

[0401] For example, the information detected by the detection unit 250 is compared with a pre-set threshold, and the comparison result It can be used for events.

[0402] Specifically, a pressure sensor that contacts buttons or other objects positioned to be pressed into the casing. These can be used in the detection unit 250.

[0403] 《Instructions to associate with a specified event》 For example, a termination command can be associated with a predetermined event.

[0404] For example, "page turning" is used to switch the displayed image information from one image to another. The "page turn command" can be associated with a predetermined event. Arguments that determine the page-turning speed used during execution are set using a predetermined event. It can be given.

[0405] For example, move the display position of a portion of an image to create a continuous section within that portion. You can associate commands such as "scroll commands" that display other parts with specific events. This determines the speed at which the display moves when executing the "scroll command". Arguments can be provided using a predetermined event.

[0406] For example, commands to set the display method or commands to generate image information are sent to a predetermined event It can be associated with a predetermined event. It can be associated with the . Also, the argument that determines the brightness of the generated image is set by the detection unit 2 50 may be determined based on the ambient brightness detected by the sensor.

[0407] For example, information delivered using a push-type service can be acquired using the communication unit 290. Commands and other instructions can be associated with specific events.

[0408] Furthermore, the determination of whether or not the person is qualified to acquire the information is made using the location information detected by the detection unit 250. This is also acceptable. Specifically, being inside or in a designated classroom, school, conference room, company, building, etc. In some cases, it may be determined that one is qualified to obtain the information. This could, for example, be a school or This involves receiving educational materials distributed in classrooms at universities, etc., and using the information processing device 200 as textbooks, etc. This is possible (see Figure 10(C)). Alternatively, you can receive materials distributed in a company's meeting room. It can be used in meeting materials.

[0409] This embodiment can be appropriately combined with other embodiments shown herein. .

[0410] (Embodiment 8) In this embodiment, the configuration of an information processing device according to one aspect of the present invention is shown in Figures 13 to 15. I will explain while referring to it.

[0411] Figures 13 to 15 illustrate the configuration of an information processing device according to one embodiment of the present invention. Figure 13 (A) is a block diagram of the information processing device, and Figures 13(B) to 13(E) are block diagrams of the information processing device This is a perspective view illustrating the configuration of the device. Figures 14(A) to 14(E) show the information processing device. This is a perspective view illustrating the configuration. Figures 15(A) and 15(B) show the information processing device. This is a perspective view explaining the structure.

[0412] <Information Processing Device> The information processing device 5200B described in this embodiment includes an arithmetic unit 5210 and an input / output device 5 It has 220 and (see Figure 13(A)).

[0413] The arithmetic unit 5210 has a function to be supplied with operation information, and based on the operation information, it provides image information It has the function of supplying.

[0414] The input / output device 5220 includes a display unit 5230, an input unit 5240, a detection unit 5250, and a communication unit 52 90. It has functions for supplying operation information and image information. Also, input / output The device 5220 has the function of supplying detection information, the function of supplying communication information and the function of supplying communication information It is equipped with the function of being supplied.

[0415] The input unit 5240 has a function to supply operation information. For example, the input unit 5240 is an information processing unit. Operational information is supplied based on the user's actions on the 5200B control device.

[0416] Specifically, keyboards, hardware buttons, pointing devices, and touch sensors. Input section 5 includes an illuminance sensor, imaging device, audio input device, gaze input device, posture detection device, etc. It can be used with 240.

[0417] The display unit 5230 has a display panel and a function to display image information. For example, in practice The display panel described in Embodiments 1 to 4 can be used in the display unit 5230. ru.

[0418] The detection unit 5250 has a function to supply detection information. For example, if an information processing device is used It has a function to detect the surrounding environment and supply it as detection information.

[0419] Specifically, it detects illuminance sensors, imaging devices, posture detection devices, pressure sensors, and human presence sensors. It can be used in part 5250.

[0420] The communication unit 5290 has functions for receiving and supplying communication information. For example, wireless It has the function of connecting to other electronic devices or communication networks via communication or wired communication. It includes functions such as wireless local area communication, telephone communication, and short-range wireless communication.

[0421] 《Example of Information Processing Device Configuration 1》 For example, the outer shape of a cylindrical column or the like can be applied to the display unit 5230 (Figure 13). (See (B)). It also features a function to change the display method according to the illumination level of the usage environment. It has a function to detect the presence of a person and change the displayed content. This allows, for example, a building It can be installed on a pillar. Or, it can display advertisements or information, etc. Or It can be used in digital signage, etc.

[0422] 《Example of Information Processing Device Configuration 2》 For example, it has a function that generates image information based on the trajectory of the pointer used by the user. See Figure 13(C). Specifically, the diagonal length is 20 inches or more, preferably 40 inches. A display panel of 55 inches or larger, more preferably 55 inches or larger, can be used. Number display panels can be arranged and used in a single display area. Alternatively, multiple display panels can be used. These can be arranged side-by-side to create a multi-screen setup. This allows for applications such as electronic whiteboards and electronic displays. It can be used for small bulletin boards, electronic signs, etc.

[0423] 《Example of Information Processing Device Configuration 3》 Information can be received from other devices and displayed on the display unit 5230 (see Figure 13(D)). (Illuminate). Or, several options can be displayed. Or, the user can select some of the options. You can select and reply to the source of the information. Alternatively, for example, depending on the illuminance of the environment, It includes a function to change the display method. This allows, for example, to reduce the power consumption of the smartwatch. It can be reduced. Or, for example, it can be suitably used even in environments with strong sunlight, such as outdoors on a sunny day. Images can be displayed on the smartwatch for use.

[0424] 《Example of Information Processing Device Configuration 4》 The display unit 5230 has, for example, a curved surface that gently curves along the side of the housing (Figure 13( See E). Alternatively, the display unit 5230 includes a display panel, and the display panel is, for example, on the front It has the ability to display on the sides, top, and back. This allows for, for example, the front of a mobile phone. In addition, information can be displayed on the sides, top, and back.

[0425] 《Example of Information Processing Device Configuration 5》 For example, information can be received from the internet and displayed on the display unit 5230. See Figure 14(A). Alternatively, the created message can be viewed on the display unit 5230. It is possible. Or, the created message can be sent to another device. Or, for example, the usage environment It has a function that changes the display method according to the illuminance. This reduces the consumption of smartphones. Power consumption can be reduced. Or, for example, in environments with strong sunlight such as outdoors on a sunny day. The image can be displayed on a smartphone for optimal use.

[0426] 《Example of Information Processing Device Configuration 6》 A remote controller can be used with the input unit 5240 (see Figure 14(B)). Alternatively, for example, information can be received from a broadcasting station or the internet and displayed on the display unit 5230. It can be shown. Alternatively, the user can be photographed using the detection unit 5250. Alternatively, The user's video can be transmitted. Alternatively, the user's viewing history can be obtained and sent to a cloud service. It can be provided. Alternatively, recommendation information can be obtained from a cloud service and displayed on the display unit 52. It can be displayed in section 30. Alternatively, it can display programs or videos based on recommendation information. Alternatively, for example, it may have a function to change the display method according to the illumination level of the usage environment. Furthermore, to ensure suitable use even when exposed to strong sunlight streaming into the room on a sunny day, the image is processed to... It can be displayed in the revision system.

[0427] 《Example of Information Processing Device Configuration 7》 For example, educational materials can be received from the internet and displayed on the display unit 5230. See Figure 14(C). Alternatively, use the input unit 5240 to input the report and connect to the internet. It can be sent to a hotline. Alternatively, the edited report results can be received from a cloud service. Alternatively, an evaluation can be obtained and displayed on the display unit 5230. Or, based on the evaluation, a suitable teaching can be provided. You can select and display materials.

[0428] For example, it can receive an image signal from another information processing device and display it on the display unit 5230. Alternatively, you can prop it up on a stand or similar and use the display unit 5230 as a sub-display. This allows for optimal use even in environments with strong ambient light, such as sunny outdoor conditions. Images can be displayed on a tablet computer for use.

[0429] 《Example of Information Processing Device Configuration 8》 The information processing device includes, for example, a plurality of display units 5230 (see Figure 14(D)). The detection unit 5250 can capture images while displaying them on the display unit 5230. Alternatively, the image can be captured. The captured video can be displayed on the detection unit. Alternatively, the captured video can be displayed on the input unit 5240. You can decorate the video. Or, you can attach a message to the video you've filmed. Or, - Can be sent over the internet. Alternatively, it has a function to change shooting conditions according to the illumination of the environment. This allows for optimal viewing even in environments with strong ambient light, such as outdoors on a sunny day. In this way, the subject can be displayed on the digital camera.

[0430] 《Example of Information Processing Device Configuration 9》 For example, another information processing device can be used as a slave, and the information processing device of this embodiment can be used as a master. It can be used to control other information processing devices (see Figure 14(E)). Or, for example If a portion of the image information is displayed on the display unit 5230, and the other portion of the image information is displayed on another information processing device. It can be displayed on the display unit. Or, an image signal can be supplied. Or, The communication unit 5290 can be used to obtain information to be written from the input unit of another information processing device. This allows, for example, the use of a large display area with a portable personal computer. It is possible.

[0431] 《Example of Information Processing Device Configuration 10》 The information processing device includes, for example, a detection unit 5250 that detects acceleration or orientation (Figure 15). (See (A)). Alternatively, the detection unit 5250 detects the user's position or the direction the user is facing. Information relating to the user can be supplied. Alternatively, the information processing device can provide information relating to the user's location or use. Based on the direction the person is facing, image information for the right eye and image information for the left eye are generated. This is possible. Alternatively, the display unit 5230 is equipped with a display area for the right eye and a display area for the left eye. This allows, for example, the video of an immersive virtual reality space to be displayed on goggles-type information. It can be displayed on the processing unit.

[0432] 《Example of Information Processing Device Configuration 11》 The information processing device includes, for example, an imaging device and a detection unit 5250 that detects acceleration or orientation. (See Figure 15(B)). Alternatively, the detection unit 5250 detects the user's position or the direction the user is facing. It can supply information relating to the direction the user is facing. Alternatively, the information processing device can provide information relating to the user's position Alternatively, image information can be generated based on the direction the user is facing. For example, information can be attached to and displayed on real-world scenery. Or, in augmented reality space. The image can be displayed on a glasses-type information processing device.

[0433] This embodiment can be appropriately combined with other embodiments shown herein. .

[0434] (Embodiment 9) In this embodiment, the transistor configuration that can be used in a functional panel according to one aspect of the present invention The details will be explained with reference to Figure 21. For example, the present invention as described in Embodiment 1. It can be used in transistor M21 or transistor MD of a functional panel in one embodiment. Cut.

[0435] <Example of semiconductor device configuration> The configuration of the semiconductor device having transistor 300 will be explained using Figure 21. Figures 21(D) to 21(D) show a top view and a cross-sectional view of a semiconductor device having a transistor 300. Yes. Figure 21(A) is a top view of the semiconductor device. Also, Figures 21(B) to 21 (D) is a cross-sectional view of the semiconductor device. Here, Figure 21(B) is a cross-sectional view of Figure 21(A) with A This is a cross-sectional view of the area indicated by the dashed line in 1-A2, showing the channel length direction of transistor 300. This is also a cross-sectional view. Furthermore, Figure 21(C) shows the section indicated by the dashed line A3-A4 in Figure 21(A). This is a cross-sectional view of the position, and is also a cross-sectional view of transistor 300 in the channel width direction. Also, Figure 2 Figure 1(D) is a cross-sectional view of the area shown by the dashed line A5-A6 in Figure 21(A). In the top view of 21(A), some elements have been omitted for clarity.

[0436] The following methods for depositing insulators, conductors, oxides, and semiconductors include sputtering and chemical vapor deposition. Phase growth (CVD: Chemical Vapor Deposition), molecular beam e Pitaxy (MBE: Molecular Beam Epitaxy), Pulse Ray Pulsed Laser Deposition (PLD), atomic layer deposition ( This can be done using methods such as ALD (Atomic Layer Deposition). Yes, it is possible. Also, in this specification, the term "insulator" may be interpreted as "insulating film" or "insulating layer." It can be replaced. Also, the term "conductor" can be replaced with "conductive film" or "conductive layer." It is possible to replace the term "oxide" with "oxide film" or "oxide layer." It is possible to also replace the term "semiconductor" with "semiconductor film" or "semiconductor layer." It is possible.

[0437] A semiconductor device according to one aspect of the present invention comprises an insulator 312 on a substrate (not shown) and on the insulator 312 The insulator 314, the transistor 300 on the insulator 314, and the insulating film on the transistor 300 Edge body 380, insulator 382 on insulator 380, insulator 383 on insulator 382, It has an insulator 385 on the edge 383, and an insulator 312, an insulator 314, an insulator 380 Insulators 382, ​​383, and 385 function as interlayer insulating films. , conductor 340 (conductor 3) is electrically connected to transistor 300 and functions as a plug. It has 40a and a conductor 340b). Note that the conductor 340 which functions as a plug An insulator 341 (insulator 341a and insulator 341b) is provided in contact with the side surface. Furthermore, on the insulator 385 and on the conductor 340, there are wires that are electrically connected to the conductor 340. Conductors 346 (conductors 346a and 346b) that function as such are provided.

[0438] In contact with the inner wall of the opening of insulator 380, insulator 382, ​​insulator 383, and insulator 385 An insulator 341a is provided, and the first conductive material of the conductor 340a is in contact with the side surface of the insulator 341a. A body is provided, and further inside, a second conductive material 340a is provided. The edge body 380, insulator 382, ​​insulator 383, and insulator 385 are in contact with the inner wall of the opening and are insulated An edge member 341b is provided, and the first conductor of the conductor 340b is in contact with the side surface of the insulator 341b. A second conductive material, conductive material 340b, is provided further inside. The height of the top surface of the electric body 340 and the height of the top surface of the insulator 385 in the region overlapping with the conductor 346 , can be done to the same extent. Note that in transistor 300, the first conductor of conductor 340 and The present invention is not limited to the above, although it shows a configuration in which a second conductive material is laminated to the conductive material 340. It is not possible to do so. For example, the conductor 340 is prepared as a single layer or a laminated structure of three or more layers. It may also be configured in such a way. If the structure has a layered structure, an ordinal number may be assigned to distinguish it according to the order of formation. There are cases where this occurs.

[0439] [Transistor 300] As shown in Figures 21(A) to 21(D), the transistor 300 is on the insulator 314. An insulator 316 and a conductor 305 (conductor 3) arranged to be embedded in the insulator 316. 05a, conductor 305b, and conductor 305c), on the insulator 316, and conductor 3 Insulator 322 on 05, insulator 324 on insulator 322, and oxide 3 on insulator 324 30a, oxide 330b on oxide 330a, and oxide 343 (acid) on oxide 330b A conductor 342a on oxide 343a and an oxide 343b, and a conductive The insulator 371a on body 342a, the conductor 342b on oxide 343b, and the conductor 342 Insulator 371b on b, and insulator 350 (insulator 350a, and insulating oxide 330b) on oxide 330b, and insulating oxide 350a The edge body 350b) and the conductor 36 located on the insulator 350 and overlapping with a portion of the oxide 330b 0 (conductors 360a and 360b), insulator 322, insulator 324, oxide 330a, oxide 330b, oxide 343a, oxide 343b, conductor 342a, conductor 342b, insulator 371a, and insulator 375 arranged to cover insulator 371b, It holds.

[0440] In the following, oxides 330a and 330b will be collectively referred to as oxide 330. There is a combination. Also, there are cases where conductor 342a and conductor 342b are collectively referred to as conductor 342. Yes, there are cases where insulators 371a and 371b are collectively referred to as insulator 371. .

[0441] The insulators 380 and 375 are provided with openings that reach the oxide 330b. An insulator 350 and a conductor 360 are arranged within the opening. Also, transistor 3 In the channel length direction of 00, insulator 371a, conductor 342a and oxide 343a And between the insulator 371b, the conductor 342b and the oxide 343b, there is a conductor 360, An insulator 350 is provided. The insulator 350 is in contact with the side surface of the conductor 360. It has a region that is in contact with the bottom surface of the conductor 360.

[0442] Oxide 330 consists of oxide 330a placed on insulator 324 and oxide 330a Preferably, the oxide 330b is arranged in a certain position. Below the oxide 330b, the oxide Having 330a, the oxide 3 This can suppress the diffusion of impurities into 30b.

[0443] In transistor 300, oxide 330 is oxide 330a and oxide 330 The present invention describes a configuration in which two layers of b are stacked, but the present invention is not limited to this. For example, the configuration may consist of a single layer of oxide 330b, or a laminated structure of three or more layers. Each of oxides 330a and 330b may have a layered structure.

[0444] Conductor 360 functions as the first gate (also called the top gate) electrode, and conductor 3 05 functions as the second gate (also called the back gate) electrode. Also, insulator 3 50 functions as the first gate insulating film, and insulators 324 and 322 are the second It functions as a gate insulating film. Also, the conductor 342a is either a source electrode or a drain electrode. It functions as one of the two electrodes, and the conductor 342b functions as the other of the source electrode or drain electrode. It is possible. In addition, at least a portion of the region of the oxide 330 that overlaps with the conductor 360 is a channel. It functions as a formation region.

[0445] Oxide 330b is present in the region superimposed on conductor 342a, in the source region and drain region. Having one side, the source region and the drain region are located in the region that overlaps with the conductor 342b. It has channels in the region sandwiched between the source region and the drain region. It has a formation region (the area shown by the shaded part in Figure 21(B)).

[0446] The channel-forming region has less oxygen deficiency than the source and drain regions, or Due to the low impurity concentration, this is a high-resistance region with a low carrier concentration. Here, the channel formation region The carrier concentration in the region is 1 × 10⁻⁶. 18 cm -3The following is preferable: 1 × 10 17 c m -3 It is more preferable that it be less than 1 × 10 16 cm -3 It is even better if it is less than Mashiku, 1 x 10 13 cm -3 It is even more preferable that it be less than 1 × 10 12 cm -3 It is even more preferable that it be less than [value]. Furthermore, regarding the lower limit of the carrier concentration in the channel-forming region... There are no particular limitations, but for example, 1 x 10 -9 cm -3 It can be done this way.

[0447] Furthermore, in the above, the oxide 330b has a channel-forming region, a source region, and a drain region. While examples of region formation have been shown, the present invention is not limited thereto. For example, Similarly, channel-forming regions, source regions, and drain regions are formed in oxide 330a. This may happen.

[0448] Transistor 300 includes an oxide 330 (oxide 330a, and A metal oxide (hereinafter also called an oxide semiconductor) that functions as a semiconductor (oxide 330b). It is preferable to use ).

[0449] Furthermore, metal oxides that function as semiconductors have a band gap of 2 eV or more, preferably 2 It is preferable to use a metal with a band gap of 0.5 eV or higher. By using oxides, the off-current of the transistor can be reduced.

[0450] As oxide 330, for example, In-M-Zn acid having indium, element M and zinc. Iridescents (elements M include aluminum, gallium, yttrium, tin, copper, vanadium, and beryllium) Um, boron, titanium, iron, nickel, germanium, zirconium, molybdenum, rancid Tan, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium It is preferable to use one or more metal oxides selected from the above. Also, oxide 3 For 30, In-Ga oxide, In-Zn oxide, or indium oxide may be used.

[0451] Here, the atomic ratio of In to element M in the metal oxide used for oxide 330b is , greater than the atomic ratio of In to element M in the metal oxide used in oxide 330a It is preferable.

[0452] Specifically, as oxide 330a, In:M:Zn = 1:3:4 [atomic ratio] or The composition in its vicinity, or In:M:Zn=1:1:0.5 [atomic ratio] or its vicinity. A metal oxide with the following composition can be used. Also, as oxide 330b, In:M:Zn=1 :1 [atomic ratio] or a composition close to that, or In:M:Zn=4:2:3 [atomic ratio] A metal oxide with a composition of the [number of particles] ratio or a nearby composition should be used. Note that nearby compositions refer to: It includes a range of ±30% of the desired atomic ratio. Furthermore, gallium can be used as element M. preferable.

[0453] Furthermore, when depositing metal oxides by sputtering, the above atomic ratio is determined by the deposited film. Not limited to the atomic ratio of metal oxides, the sputtering target used for depositing metal oxide films The atomic ratio of to may also be acceptable.

[0454] In this way, by placing oxide 330a below oxide 330b, oxide 330a Furthermore, the diffusion of impurities and oxygen into oxide 330b from the structure formed below. It can be suppressed.

[0455] Furthermore, oxides 330a and 330b share a common element other than oxygen (main component). By doing so, the defect level density at the interface between oxide 330a and oxide 330b is reduced. This can be achieved by lowering the defect level density at the interface between oxide 330a and oxide 330b. Therefore, the influence of interfacial scattering on carrier conduction is small, and high on-currents are possible. It can be obtained.

[0456] It is preferable that oxides 330a and 330b each have crystalline properties. , as oxide 330b, CAAC-OS (c-axis aligned crystal It is preferable to use an alline oxide semiconductor.

[0457] CAAC-OS has a highly crystalline, dense structure, and is free from impurities and defects (e.g., acid Prime defect (V O Metal oxides with low oxygen vacancy (also known as oxygen vacancy) In particular, after the formation of the metal oxide, the temperature should not be such that the metal oxide becomes polycrystalline (for example, 4 By heat treatment at temperatures between 00°C and 600°C, CAAC-OS can be made more crystalline. It can be made into a dense structure. In this way, the density of CAAC-OS can be increased. This makes it possible to further reduce the diffusion of impurities or oxygen in the CAAC-OS.

[0458] On the other hand, CAAC-OS is difficult to identify clear grain boundaries, so it is not caused by grain boundaries. It can be said that a decrease in electron mobility is less likely to occur. Therefore, gold with CAAC-OS The group oxides have stable physical properties. Therefore, metal oxides containing CAAC-OS are thermal It is highly reliable and robust.

[0459] Insulator 312, insulator 314, insulator 371, insulator 375, insulator 382, ​​and insulation At least one of the bodies 383 contains impurities such as water and hydrogen, which enter from the substrate side or from the transient side. As a barrier insulating film that suppresses diffusion from above to transistor 300, It is preferable that this is possible. Therefore, insulator 312, insulator 314, insulator 371, insulation At least one of body 375, insulator 382, ​​and insulator 383 contains a hydrogen atom, a hydrogen molecule, Water molecules, nitrogen atoms, nitrogen molecules, nitrogen oxide molecules (N2O, NO, NO2, etc.), copper atoms, etc. Using an insulating material that has the function of suppressing the diffusion of impurities (i.e., the above impurities do not easily permeate it) It is preferable to use oxygen (for example, at least one such as an oxygen atom or oxygen molecule). It is preferable to use an insulating material that has a function to suppress diffusion (i.e., one that is less permeable to the above-mentioned oxygen). It's nice.

[0460] In this specification, a barrier insulating film refers to an insulating film that has barrier properties. In the specification, barrier properties refer to the function of suppressing the diffusion of the corresponding substance (also known as low permeability). (This refers to capturing and fixing the corresponding substance (also known as gettering). ) This will be the function.

[0461] Insulator 312, insulator 314, insulator 371, insulator 375, insulator 382, ​​and insulation Examples of material 383 include aluminum oxide, magnesium oxide, hafnium oxide, and acid Gallium oxide, indium gallium zinc oxide, silicon nitride, or silicon nitride For example, insulators 312, 375, and 383 can be used. Therefore, it is preferable to use silicon nitride or the like, which has higher hydrogen barrier properties. Also, for example For example, insulators 314, 371, and 382 capture hydrogen and hydrogen It is preferable to use aluminum oxide or magnesium oxide, which have high adhesion properties. This is because impurities such as water and hydrogen can pass through insulators 312 and 314. This can suppress diffusion from the substrate side to the transistor 300 side. Alternatively, water Furthermore, impurities such as hydrogen are located outside the insulator 383, such as in the interlayer insulating film. This can suppress diffusion towards the transistor 300. Alternatively, the insulator 324 can be used to prevent this. This prevents the contained oxygen from diffusing to the substrate side via insulators 312 and 314. It can be controlled. Alternatively, oxygen contained in insulator 380, etc., can affect insulator 382, ​​etc. This allows for suppression of diffusion upwards from transistor 300. Transistor 300 has the function of suppressing the diffusion of impurities such as water and hydrogen, and oxygen. insulator 312, insulator 314, insulator 371, insulator 375, insulator 382, ​​and It is preferable to have a structure in which the component is surrounded by an insulator 383.

[0462] Here, insulator 312, insulator 314, insulator 371, insulator 375, insulator 382, It is preferable to use an oxide having an amorphous structure as the insulator 383. For example, AlO x (x is any number greater than 0), or MgO y (y is any number greater than 0) It is preferable to use metal oxides such as ). In oxides, oxygen atoms have dangling bonds, and water is formed at these dangling bonds. It may have the property of capturing or fixing elements. Using metal oxides as components of transistor 300, or transistor 300 By placing it around the transistor 300, the hydrogen contained in the transistor 300, or the It can capture or fix hydrogen present in the surroundings. In particular, the chain of transistor 300 It is preferable to capture or fix hydrogen contained in the Nell-forming region. Amorphous structure The metal oxide having is used as a component of transistor 300, or transistor 3 By providing it around 00, a transistor 300 with good characteristics and high reliability, and And semiconductor devices can be manufactured.

[0463] Furthermore, insulators 312, 314, 371, 375, 382, ​​and The insulator 383 is preferably amorphous, but may have a region with a polycrystalline structure. Insulator 312, insulator 314, insulator 371, insulator 3 75, insulator 382, ​​and insulator 383 consist of an amorphous layer and a polycrystalline layer. It may also be a multilayer structure in which these are stacked. For example, a polycrystalline structure on top of an amorphous structure. A laminated structure in which layers of the structure are formed is also acceptable.

[0464] Insulator 312, insulator 314, insulator 371, insulator 375, insulator 382, ​​and insulation The film deposition of body 383 can be carried out, for example, by sputtering. Since hydrogen does not need to be used as the film-forming gas, insulator 312, insulator 314, insulator 371, The hydrogen concentration in insulators 375, 382, ​​and 383 can be reduced. Furthermore, the film deposition method is not limited to sputtering, but also includes CVD, MBE, and P The LD method, ALD method, etc., may be used as appropriate.

[0465] Furthermore, insulators 316, 380, and 385 have a higher dielectric constant than insulator 314. A low dielectric constant is preferable. By using a material with a low dielectric constant as the interlayer insulating film, the gap between wirings is reduced. Raw capacitance can be reduced. For example, insulator 316, insulator 380, and insulator 3 As 85, silicon oxide, silicon oxide nitride, silicon oxide nitride, silicon nitride, fluorine silicon oxide with added nitrogen, silicon oxide with added carbon, and acid with added carbon and nitrogen. Silicone compounds, porous silicon oxide, etc., can be used as appropriate.

[0466] The conductor 305 is arranged to overlap with the oxide 330 and the conductor 360. Preferably, the conductor 305 is embedded in an opening formed in the insulator 316. .

[0467] The conductor 305 comprises conductor 305a, conductor 305b, and conductor 305c. The electrical body 305a is provided in contact with the bottom surface and side wall of the opening. The conductor 305b is a conductor It is provided so as to be embedded in a recess formed in the conductive body 305a. Here, conductive body 305 The upper surface of b is lower than the upper surface of the conductor 305a and the upper surface of the insulator 316. Conductor 30 5c is provided in contact with the upper surface of the conductor 305b and the side surface of the conductor 305a. The height of the upper surface of the conductor 305c is equal to the height of the upper surface of the conductor 305a and the height of the insulator 316. It is approximately the same as the height of the top surface. In other words, the conductor 305b is the same as the conductor 305a and the conductor 30 The structure will be enclosed within 5c.

[0468] Conductors 305a and 305c can be used in the conductor 360a described later. A conductive material can be used. Also, conductor 305b will be used for conductor 360b, which will be described later. A conductive material that can do this should be used. Also, in transistor 300, the conductor 305 This describes a configuration in which conductors 305a, 305b, and 305c are stacked. However, the present invention is not limited to this. For example, the conductor 305 is a single layer, 2 The structure may be configured as a single layer or a laminated structure of four or more layers.

[0469] Insulators 322 and 324 function as gate insulating films.

[0470] The insulator 322 suppresses the diffusion of hydrogen (for example, at least one such as a hydrogen atom or hydrogen molecule). It is preferable that the insulator 322 has the function of having oxygen (for example, oxygen atoms, acid It is preferable that it has the function of suppressing the diffusion of at least one of elementary molecules. For example, The edge body 322 suppresses the diffusion of hydrogen and / or oxygen more effectively than the insulator 324. It is preferable that it has the ability.

[0471] The insulator 322 is an acid made of aluminum and hafnium, which are insulating materials, or one or both. It is preferable to use an insulator containing an oxide. Examples of such insulators include aluminum oxide and hafniac oxide. Using oxides containing aluminum, hafnium, and hafnium (hafnium aluminate), etc. It is preferable to use the above-mentioned insulator 314 as the insulator 322. A barrier insulating film that can perform this function may also be used.

[0472] The insulator 324 can be any suitable material such as silicon oxide or silicon oxide nitride. By providing the insulator 324 in contact with the oxide 330, the oxygen vacancies in the oxide 330 are reduced. This can reduce the reliability of transistor 300. Also, insulator 324, It is preferable that the oxide 330a is superimposed on the island-like structure. In this case, The edge 375 is configured to be in contact with the side surface of the insulator 324 and the upper surface of the insulator 322. Therefore, the insulator 324 and the insulator 380 can be separated by the insulator 375. Oxygen contained in insulator 380 diffuses into insulator 324, and the oxygen in insulator 324 becomes excessive. It can prevent it from becoming excessive.

[0473] The insulators 322 and 324 may have a laminated structure of two or more layers. In that case, it is not limited to a laminated structure made of the same material, but can also be a laminated structure made of different materials. In addition, in Figure 21(B), etc., the insulator 324 is superimposed with the oxide 330a to form island-like structures. The present invention is not limited to the configurations shown. Insulator 324 If the amount of oxygen contained in it can be properly adjusted, then, similar to insulator 322, insulator 324 can be... It's also acceptable to have a structure that doesn't involve any turning points.

[0474] Oxide 343a and oxide 343b are provided on oxide 330b. Oxide 34 3a and oxide 343b are provided separated by the conductor 360. Oxide 343 (acid The oxides 343a and 343b) are preferable to have the function of suppressing oxygen permeation. It seems so. Between the conductor 342, which functions as a source electrode or drain electrode, and the oxide 330b. By placing an oxide 343, which has the function of suppressing oxygen permeation, the conductor 342 and This is preferable because it reduces the electrical resistance between the conductor 342 and the oxide 330b. If the electrical resistance between material 330b can be sufficiently reduced, even if the oxide 343 is not provided, good.

[0475] As oxide 343, a metal oxide containing element M may be used. In particular, element M is aluminum Tin, gallium, yttrium, or tin may be used. Oxide 343 is an oxide. It is preferable that the concentration of element M is higher than that of 330b. Also, as oxide 343, gal oxide Rium may be used. Also, as oxide 343, metal oxides such as In-M-Zn oxide may be used. You may use a substance. Specifically, in the metal oxide used in oxide 343, with respect to In The atomic ratio of element M in the metal oxide used in oxide 330b is the ratio of element M to In. It is preferable that the atomic ratio of M is greater than that of M. Also, the film thickness of oxide 343 is 0.5 nm or more. Preferably 5 nm or less, more preferably 1 nm to 3 nm, and even more preferably 1 nm The above is 2nm or less.

[0476] Conductor 342a is provided in contact with the upper surface of oxide 343a, and conductor 342b is made of oxide 3 It is preferable that it be provided in contact with the upper surface of 43b. Conductors 342a and 342b are Each functions as either the source electrode or the drain electrode of transistor 300.

[0477] For example, tantalum can be used as the conductor 342 (conductor 342a and conductor 342b). Nitride containing titanium, nitride containing molybdenum, nitride containing tungsten , nitrides containing tantalum and aluminum, nitrides containing titanium and aluminum It is preferable to use such materials. In one embodiment of the present invention, nitrides containing tantalum are particularly preferred. It seems so. Also, for example, ruthenium oxide, ruthenium nitride, strontium and ruthenium Oxides containing lanthanum and nickel may also be used. These materials are Because it is a conductive material that is resistant to oxidation, or a material that maintains its conductivity even when it absorbs oxygen, preferable.

[0478] Furthermore, a curved surface is not formed between the side surface of the conductor 342 and the top surface of the conductor 342. Preferably, by using a conductor 342 in which the curved surface is not formed, as shown in Figure 21(D) Therefore, the cross-sectional area of ​​the conductor 342 in the channel width direction can be increased. This increases the conductivity of conductor 342 and increases the on-current of transistor 300. It can be done.

[0479] The insulator 371a is provided in contact with the upper surface of the conductor 342a, and the insulator 371b is It is provided in contact with the upper surface of the conductor 342b.

[0480] Insulator 375 is located on the top surface of insulator 322, the side surface of insulator 324, the side surface of oxide 330a, and acid Side of oxide 330b, side of oxide 343, side of conductor 342, side of insulator 371 It is provided in contact with the upper surface. The insulator 375 is provided with the insulator 350 and the conductor 360. An opening is formed in the area that can be accessed.

[0481] Within the region sandwiched between insulator 312 and insulator 375, it has the function of capturing impurities such as hydrogen. By providing insulators 314, 371, and 375, insulator 324 , or capture impurities such as hydrogen contained in the insulator 316, and within that region, The amount of hydrogen can be kept constant. In this case, insulator 314, insulator 371, and Preferably, the insulator 375 contains amorphous aluminum oxide. .

[0482] The insulator 350 has an insulator 350a and an insulator 350b on the insulator 350a, and a gate It functions as an insulating film. Also, the insulator 350a is on the upper surface of oxide 330b, oxide 343 The side of the conductor 342, the side of the insulator 371, the side of the insulator 375, and the insulator It is preferable to position it in contact with the side surface of 380. Also, the film thickness of the insulator 350 should be 1 nm or less. It is preferable to keep the wavelength below 20 nm.

[0483] Insulator 350a consists of silicon oxide, silicon oxide nitride, silicon oxide nitride, and silicon nitride. fluorine-added silicon oxide, carbon-added silicon oxide, carbon and nitrogen-added silicon oxide Silicon oxide, porous silicon oxide, etc. can be used. Ricon and silicon oxide-nitride are preferred because they are stable to heat. Insulator 350a is Similar to insulator 324, it is preferable that the concentration of impurities such as water and hydrogen is reduced.

[0484] Insulator 350a is formed using an insulator that releases oxygen upon heating, and insulator 350b It is preferable to form this using an insulator that has the function of suppressing the diffusion of oxygen. This configuration allows oxygen contained in the insulator 350a to diffuse into the conductor 360. This can be suppressed. In other words, it is possible to suppress the decrease in the amount of oxygen supplied to oxide 330. Yes, it is possible. Furthermore, it suppresses the oxidation of the conductor 360 by the oxygen contained in the insulator 350a. This is possible. For example, the insulator 350b can be provided using the same material as the insulator 322. can.

[0485] Specifically, the insulator 350b includes hafnium, aluminum, gallium, and yttrium. Zirconium, tungsten, titanium, tantalum, nickel, germanium, magnesium Metal oxides containing one or more selected elements such as cilium, or oxide 3 Any metal oxide that can be used as 30 can be used. In particular, aluminum It is preferable to use an insulator containing an oxide of one or both of hafnium. The marginal material includes aluminum oxide, hafnium oxide, aluminum, and hafnium. It is preferable to use an oxide (hafnium aluminate), etc. Also, insulator 350b The film thickness is preferably 0.5 nm or more and 3.0 nm or less, and preferably 1.0 nm or more and 1.5 nm or less. The bottom one is preferable.

[0486] Note that in Figures 21(B) and 21(C), the insulator 350 is shown as a two-layer laminated structure. However, the present invention is not limited to this. The insulator 350 can be laid in a single layer or in a lamination of three or more layers. It can also be used as a structure.

[0487] The conductor 360 is provided on the insulator 350b, and is the first gate of the transistor 300. It functions as an electrode. Conductor 360 consists of conductor 360a and is placed on top of conductor 360a. It is preferable to have a conductor 360b that has been treated. For example, the conductor 360a is a conductor It is preferable to position it so as to enclose the bottom and sides of 360b. Also, see Figure 21(B) As shown in Figure 21(C), the upper surface of the conductor 360 is approximately the same as the upper surface of the insulator 350. In addition, in Figures 21(B) and 21(C), the conductor 360 is conductor 360 Although it is shown as a two-layer structure of a and conductor 360b, a single-layer structure is also acceptable, or a multilayer structure of three or more layers. A layered structure is also acceptable.

[0488] Conductor 360a contains hydrogen atoms, hydrogen molecules, water molecules, nitrogen atoms, nitrogen molecules, nitrogen oxide molecules, It is preferable to use a conductive material that has the function of suppressing the diffusion of impurities such as copper atoms. Alternatively, a function that inhibits the diffusion of oxygen (for example, at least one such as an oxygen atom or oxygen molecule). It is preferable to use a conductive material having [specific properties].

[0489] Furthermore, because the conductor 360a has the function of suppressing oxygen diffusion, the insulator 350 contains The presence of oxygen can suppress the oxidation of the conductor 360b, which would otherwise reduce its conductivity. Conductive materials that have the function of suppressing oxygen diffusion include, for example, titanium and titanium nitride. It is preferable to use tan, tantalum, tantalum nitride, ruthenium, ruthenium oxide, etc. stomach.

[0490] Furthermore, since the conductor 360 also functions as wiring, it is possible to use a conductor with high conductivity. Preferably, the conductor 360b is mainly composed of tungsten, copper, or aluminum. A conductive material can be used. Furthermore, the conductor 360b can also be in a laminated structure. For example, a laminated structure of titanium or titanium nitride and the above-mentioned conductive material may be used.

[0491] Furthermore, in transistor 300, the conductor 360 is formed in the insulator 380, etc. It is formed self-aligningly to fill the opening. By forming the conductor 360 in this way, By aligning the conductor 360 in the region between the conductor 342a and the conductor 342b, It can be positioned with absolute certainty.

[0492] Furthermore, as shown in Figure 21(C), in the channel width direction of transistor 300, With the bottom surface of body 322 as the reference, the conductor 360 and oxide 330b It is preferable that the height of the bottom surface of the region where they do not overlap is lower than the height of the bottom surface of oxide 330b. A conductor 360, which functions as a gate electrode, is connected to an oxide 330 via an insulator 350, etc. By configuring b to cover the side and top surfaces of the channel formation region, the electric field of the conductor 360 This makes it easier to apply the effect to the entire channel formation region of oxide 330b. Therefore, transistor 3 The on-current of 00 can be increased, improving the frequency characteristics. Bottom surface of insulator 322 When used as a reference, the oxides 330a and 330b and the conductor 360 overlap. The difference between the height of the bottom surface of the conductor 360 and the height of the bottom surface of the oxide 330b in the region where it is not present. The wavelength is 0 nm to 100 nm, preferably 3 nm to 50 nm, more preferably The wavelength should be between 5nm and 20nm.

[0493] The insulator 380 is provided on the insulator 375, and the insulator 350 and the conductor 360 are provided. An opening is formed in the area where it can be done. Also, even if the upper surface of the insulator 380 is flattened Good. In this case, the upper surface of the insulator 380 is the upper surface of the insulator 350 and the upper surface of the conductor 360. It is preferable that it roughly coincides with the surface.

[0494] The insulator 382 is located on the upper surface of the insulator 380, the upper surface of the insulator 350, and the upper surface of the conductor 360. It is provided in contact with the insulator 382. The insulator 382 is protected from impurities such as water and hydrogen from above. Preferably, it functions as a barrier insulating film that suppresses diffusion of impurities such as hydrogen. It is preferable that it has the function of capturing [something]. In addition, the insulator 382 suppresses the permeation of oxygen. It is preferable that it functions as a barrier insulating film. As the insulator 382, ​​for example, aluminum oxide An insulator such as titanium can be used. Within the region sandwiched between insulator 312 and insulator 383 An insulator 382 is provided, which is in contact with the insulator 380 and has the function of capturing impurities such as hydrogen. By doing so, impurities such as hydrogen contained in the insulator 380 are captured and placed within that region. This allows the amount of hydrogen to be kept constant. In particular, as the insulator 382, ​​amorphous structure By using aluminum oxide with a specific structure, hydrogen can be captured or fixed more effectively. This is preferable because it may be the case. This results in a transistor 3 with good characteristics and high reliability. 00, and semiconductor devices can be manufactured.

[0495] Conductors 340a and 340b are mainly composed of tungsten, copper, or aluminum. It is preferable to use a conductive material that is equal to 340. Also, conductor 340a and conductor 340 b may be a laminated structure. When the conductor 340 is a laminated structure, it is in contact with the insulator 341. The conductor uses a conductive material that has the function of suppressing the permeation of impurities such as water and hydrogen. This is preferable. For example, a conductive material that can be used for the conductor 360a described above can be used. Yes.

[0496] Examples of insulators 341a and 341b include silicon nitride and aluminum oxide. An insulator such as silicon nitride may be used. Insulator 341a and Insulator 341 Since b is provided in contact with insulators 383, 382, ​​and 371, Impurities such as water and hydrogen contained in body 380, etc., in conductor 340a and conductor 340b This can suppress contamination of oxide 330.

[0497] Furthermore, it functions as wiring in contact with the upper surfaces of the conductor 340a and the conductor 340b. Conductors 346 (conductors 346a and 346b) may be placed. Conductor 34 6. Conductive materials mainly composed of tungsten, copper, or aluminum may be used. Preferably, the conductor may also be in a laminated structure, for example, titanium or titanium nitride. The conductive material may be laminated with the above conductive material. The conductive material is provided with an opening in the insulator. It may be shaped to be embedded in the mouth.

[0498] As a result, a semiconductor device with good electrical characteristics can be provided. This can provide a good semiconductor device. Furthermore, semiconductors that can be miniaturized or highly integrated We can provide a device. We can also provide a low-power semiconductor device. .

[0499] This embodiment can be appropriately combined with other embodiments shown herein. .

[0500] (Embodiment 10) In this embodiment, the OS transistor described in the above embodiment can be used. This section will explain metal oxides (hereinafter also referred to as oxide semiconductors).

[0501] The metal oxide preferably contains at least indium or zinc. In particular, indium It is preferable that it also contains aluminum, gallium, and zinc. It is preferable that it contains tungium, tin, etc. Also, boron, titanium, iron, nickel Kel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, HAF One of the following, selected from nium, tantalum, tungsten, magnesium, cobalt, etc. It may include multiple species.

[0502] <Classification of crystal structures> First, we will explain the classification of crystal structures in oxide semiconductors using Figure 22(A). Figure 22(A) shows an oxide semiconductor, typically IGZO (In, Ga, Zn, This diagram illustrates the classification of crystal structures (including metal oxides).

[0503] As shown in Figure 22(A), oxide semiconductors can be broadly classified into "Amorphous" "Shape)", "Crystalline (crystalline)", and "Crystal (crystal)", It is classified as follows: Also, within "Amorphous," there are completely amo It includes rphous. Also, within "Crystalline" there is CAAC(c- axis-aligned crystalline), nc(nanocrystal This includes line, and CAC (cloud-aligned composite). The classification of "Crystalline" includes single crystal, p Polycrystalline and completely amorphous crystals are excluded. Furthermore, within "Crystal," there are single crystals and poly crystals. It includes rystal.

[0504] Note that the structures within the thick frame shown in Figure 22(A) are "Amorphous" and "C It is an intermediate state between "crystal" and a new boundary region (New crystal This structure belongs to the alline phase. In other words, this structure is energetic Unlike the unstable "Amorphous" and "Crystal," it is completely different. This can be rephrased as having different structures.

[0505] The crystal structure of the film or substrate is determined by X-ray diffraction (XRD). It can be evaluated using the (on) spectrum. Here, "Crystalline" GIXD (Grazing-Incidence) of CAAC-IGZO film, which is classified as such. The XRD spectrum obtained by the XRD measurement is shown in Figure 22(B). Note that the GIXD method is This method is also called the thin-film method or the Seemann-Bohlin method. Hereafter, the GI shown in Figure 22(B) will be used. The XRD spectrum obtained by XD measurement will simply be referred to as the XRD spectrum. Note that Figure 22( The composition of the CAAC-IGZO film shown in B) is In:Ga:Zn=4:2:3 [atomic ratio] It is in the vicinity. Also, the thickness of the CAAC-IGZO film shown in Figure 22(B) is 500 nm. ru.

[0506] As shown in Figure 22(B), the XRD spectrum of the CAAC-IGZO film shows clear crystal structure. A peak indicating this is detected. Specifically, in the XRD spectrum of the CAAC-IGZO film... A peak indicating c-axis orientation is detected near 2θ = 31°. (See Figure 22(B)) As shown above, the peak near 2θ=31° is asymmetrical with respect to the angle at which the peak intensity was detected. That is the case.

[0507] Furthermore, the crystal structure of the film or substrate is determined by nano-beam diffraction (NBED). Diffraction patterns observed by electron diffraction (extremely low-voltage electrons) This can be evaluated using the sub-ray diffraction pattern (also called the sub-ray diffraction pattern). Diffraction of CAAC-IGZO film The pattern is shown in Figure 22(C). Figure 22(C) shows the electron beam incident parallel to the substrate. This is the diffraction pattern observed by NBED. Note that the CAAC shown in Figure 22(C) - The composition of the IGZO film is approximately In:Ga:Zn = 4:2:3 [atomic ratio]. In micro-electron diffraction, electron diffraction is performed with a probe diameter of 1 nm.

[0508] As shown in Figure 22(C), the diffraction pattern of the CAAC-IGZO film shows c-axis orientation. Multiple spots are observed.

[0509] <<Oxide semiconductor structure>> Note that oxide semiconductors, when considering their crystal structure, may be classified differently from those shown in Figure 22(A). There are combinations. For example, oxide semiconductors include single-crystal oxide semiconductors and other non-single-crystal oxides. Semiconductors can be divided into two categories. Non-single-crystal oxide semiconductors include, for example, the aforementioned CAAC-O There are S and nc-OS. In addition, non-single-crystal oxide semiconductors include polycrystalline oxide semiconductors and pseudo Amorphous-like oxide semiconductor (a-like OS) This includes materials such as (e) semiconductors and amorphous oxide semiconductors.

[0510] Here, we will provide details on the CAAC-OS, nc-OS, and a-like OS mentioned above. Give an explanation.

[0511] [CAAC-OS] CAAC-OS has multiple crystalline regions, and these multiple crystalline regions are arranged with their c-axis in a specific direction. It is an oxide semiconductor that is oriented in a particular direction. Note that the specific direction refers to the thickness direction of the CAAC-OS film. The direction normal to the surface on which the CAAC-OS film is formed, or the direction normal to the surface of the CAAC-OS film. Furthermore, a crystalline region is a region in which the atomic arrangement has periodicity. If considered as an arrangement, a crystalline region is also a region with a aligned lattice arrangement. Furthermore, CAAC-O S has a region in the ab-plane direction where multiple crystalline regions are connected, and this region is strained. This can sometimes occur. Note that strain refers to the deformation of the lattice arrangement in a region where multiple crystal regions are connected. Areas where the orientation of the grid arrangement changes between aligned regions and aligned regions with a different grid arrangement. This refers to the fact that CAAC-OS is c-axis oriented and has a clear orientation in the ab-plane direction. It is an oxide semiconductor that does not exist.

[0512] Each of the above multiple crystalline regions is composed of one or more minute crystals (with a maximum diameter of 10n It is composed of crystals that are less than m in size. If the crystalline region is composed of one minute crystal, The maximum diameter of the crystalline region is less than 10 nm. Furthermore, the crystalline region is composed of numerous tiny crystals. If this is the case, the size of the crystalline region may be around several tens of nanometers.

[0513] In addition, In-M-Zn oxide (where M is aluminum, gallium, yttrium, and tin) In one or more types selected from titanium, etc., CAAC-OS is indigenous A layer containing ions (In) and oxygen (hereinafter referred to as the In layer), and an element M, zinc (Zn), and oxygen A layered crystalline structure (also called a layered structure) is formed by stacking layers containing (M,Zn) layers. ) tends to have. Furthermore, indium and element M are mutually substitutable. Therefore, The (M,Zn) layer may contain indium. Additionally, the In layer contains the element M. This may occur. Furthermore, the In layer may also contain Zn. This layered structure is, for example, In high-resolution TEM images, it is observed as a grid pattern.

[0514] When structural analysis of a CAAC-OS film is performed using, for example, an XRD instrument, the θ / 2θ skid is observed. Out-of-plane XRD measurements using a champ showed a peak indicating c-axis orientation at 2θ. It is detected at 31° or near that angle. Note that the position of the peak indicating c-axis orientation (value of 2θ) This may vary depending on the type and composition of the metal elements that make up CAAC-OS.

[0515] Furthermore, for example, in the electron diffraction pattern of a CAAC-OS film, multiple bright spots (spots) may be observed. ) is observed. Note that one spot and another spot are determined by the incident electron beam that has passed through the sample. Observations are made at point-symmetric positions with respect to the spot (also called a direct spot) as the center of symmetry. ru.

[0516] When the crystal region is observed from the specific direction described above, the lattice arrangement within that crystal region is a hexagonal lattice. While this is the basic principle, the unit cell is not necessarily a regular hexagon and may be a non-regular hexagon. Also, In the distortion described, there may be grid arrangements such as pentagons and heptagons. Note that CAAC- In OS, clear grain boundaries can be observed even near strain. It is not possible. In other words, the formation of grain boundaries is suppressed by the distortion of the lattice arrangement. This can be seen. This is because CAAC-OS has a dense arrangement of oxygen atoms in the ab-plane direction. Due to the absence of certain elements, or because the substitution of metal atoms changes the bond distance between atoms, This is thought to be because it allows for distortion to be tolerated.

[0517] Furthermore, a crystal structure in which clear grain boundaries can be observed is known as polycrystalline. It is called l). The grain boundaries become recombination centers, where carriers are trapped and the transistor is formed This is highly likely to cause a decrease in current, a decrease in field-effect mobility, etc. Therefore, a clear conclusion is reached. CAAC-OS, which lacks visible grain boundaries, has a crystal structure suitable for the semiconductor layer of transistors. It is one of the crystalline oxides. Note that CAAC-OS requires the presence of Zn. The configuration is preferable. For example, In-Zn oxide and In-Ga-Zn oxide are In oxide It is preferable because it can suppress the generation of grain boundaries more effectively than other materials.

[0518] CAAC-OS is an oxide semiconductor with high crystallinity and no clearly defined grain boundaries. Therefore, CAAC-OS is less prone to a decrease in electron mobility caused by grain boundaries. Furthermore, the crystallinity of oxide semiconductors can decrease due to impurities or the formation of defects. Therefore, CAAC-OS is also an oxide semiconductor with few impurities and defects (such as oxygen vacancies). Yes, that's correct. Therefore, oxide semiconductors containing CAAC-OS have stable physical properties. Therefore, oxide semiconductors containing CAAC-OS are highly heat-resistant and reliable. -OS is stable even at high temperatures (so-called thermal budget) during the manufacturing process. Therefore, using CAAC-OS in OS transistors expands the degree of freedom in the manufacturing process. This becomes possible.

[0519] [nc-OS] nc-OS is used in minute regions (for example, regions between 1 nm and 10 nm, especially between 1 nm and 3 nm). It has periodicity in the atomic arrangement in the region of less than nm. In other words, nc-OS is minute It has crystals. The size of these minute crystals is, for example, between 1 nm and 10 nm. In particular, because they are between 1 nm and 3 nm in size, these minute crystals are also called nanocrystals. In nc-OS, no regularity is observed in the crystal orientation between different nanocrystals. Therefore, across the entire film... No orientation is observed. Therefore, nc-OS is a-like depending on the analytical method. It can sometimes be indistinguishable from OS or amorphous oxide semiconductors. For example, with respect to an nc-OS film, When performing structural analysis using an XRD device, out-of-pla scans using θ / 2θ scans are performed. In ne XRD measurements, no peak indicating crystallinity is detected. Furthermore, compared to nc-OS films... Electron diffraction using electron beams with probe diameters larger than nanocrystals (e.g., 50 nm or larger). When electron diffraction (also called limited-field diffraction) is performed, a diffraction pattern resembling a halo pattern can be observed. It is measured. On the other hand, for the nc-OS film, the size is close to or smaller than that of the nanocrystals. Electron diffraction (nanobeam electron diffraction) using an electron beam with a lobe diameter (e.g., 1 nm to 30 nm) Also called sub-ray diffraction, when this is performed, multiple particles are found within a ring-shaped region centered on the direct spot. In some cases, electron diffraction patterns with multiple spots observed may be obtained.

[0520] [a-like OS] a-like OS is an oxide semiconductor having a structure between nc-OS and amorphous oxide semiconductors. It is a conductor. a-like OS has porous or low-density regions. That is, a-like OS has lower crystallinity compared to nc-OS and CAAC-OS. Also, it has a-like properties. OS has a higher hydrogen concentration in the membrane compared to nc-OS and CAAC-OS.

[0521] <<Oxide Semiconductor Composition>> Next, we will explain the details of CAC-OS mentioned above. Note that CAC-OS is a material composition. Regarding.

[0522] [CAC-OS] CAC-OS refers to, for example, metal oxides in which the elements constituting the metal oxide are between 0.5 nm and 10 nm in size. Preferably, a composition of material that is unevenly distributed with a size of 1 nm to 3 nm or near that size. In addition, in the following, in a metal oxide, one or more metal elements are unevenly distributed, The region containing the metallic element is 0.5 nm to 10 nm, preferably 1 nm to 3 nm. The following state, where particles of similar or near-similar size are mixed, is also referred to as a mosaic or patchy appearance.

[0523] Furthermore, CAC-OS is a system where the material separates into a first region and a second region, resulting in a mosaic effect. This results in a cloud-like structure, where the first region is distributed within the membrane (hereinafter also referred to as a cloud-like structure). Therefore, CAC-OS is a mixture of the first region and the second region. It is a composite metal oxide having the following configuration.

[0524] Here, In for the metal elements constituting CAC-OS in In-Ga-Zn oxide The atomic ratios of Ga and Zn are expressed as [In], [Ga], and [Zn] respectively. To note, for example, in CAC-OS in In-Ga-Zn oxide, the first region is This is the region where [In] is greater than the [In] in the composition of the CAC-OS film. The second region is the region where [Ga] is greater than the [Ga] in the composition of the CAC-OS film. Yes. Or, for example, in the first region, [In] is greater than [In] in the second region. This is a region where the [Ga] is large and smaller than the [Ga] in the second region. In the second region, [Ga] is greater than [Ga] in the first region, and [In This is a region smaller than [In] in the first region.

[0525] Specifically, the first region mentioned above is mainly composed of indium oxide, indium zinc oxide, etc. This is the region. Furthermore, the second region mentioned above includes gallium oxide, gallium zinc oxide, etc. This is the region in which is the principal component. In other words, the first region described above is called the region in which In is the principal component. It can be replaced. Furthermore, the second region mentioned above can be rephrased as the region with Ga as the main component. It is possible.

[0526] Furthermore, a clear boundary may not be observed between the first region and the second region described above.

[0527] For example, in CAC-OS in In-Ga-Zn oxide, energy-dispersive X-ray spectroscopy is used. Law(EDX:Energy Dispersive X-ray spectrosco The EDX mapping obtained using py) shows the region with In as the main component (the first region) It has a structure in which a region mainly composed of ) and a region mainly composed of Ga (the second region) are unevenly distributed and mixed. This can be confirmed.

[0528] When CAC-OS is used in a transistor, the conductivity is due to the first region and the second region The insulating properties resulting from this work in a complementary manner to enable the switching function (On / The function to turn it off can be added to CAC-OS. In other words, CAC-OS is In part of the material, it has conductive properties, and in part of the material, it has insulating properties, and the whole material It has the function of a semiconductor. By separating the conductive function and the insulating function, dual This allows for maximizing the functionality of the transistor. Therefore, CAC-OS is used in transistors. As a result, high on-current (I on ), high field-effect mobility (μ), and good switching This enables the implementation of a specific action.

[0529] Oxide semiconductors can take on diverse structures, each possessing different properties. One embodiment of the present invention Oxide semiconductors include amorphous oxide semiconductors, polycrystalline oxide semiconductors, a-like OS, and CA. It may have two or more of the following: C-OS, nc-OS, and CAAC-OS.

[0530] <Transistors containing oxide semiconductors> Next, we will explain the case where the above oxide semiconductor is used in a transistor.

[0531] By using the above oxide semiconductor in transistors, transistors with high field-effect mobility can be produced. It can be achieved. Furthermore, highly reliable transistors can be realized.

[0532] It is preferable to use an oxide semiconductor with a low carrier concentration for the transistor. For example, The carrier concentration of oxide semiconductors is 1 × 10⁻⁶ 17 cm -3 The following is preferably 1 × 10 15 cm -3 More preferably 1 × 10 13 cm -3 More preferably 1 × 10 11 c m -3More preferably 1 × 10 10 cm -3 It is less than 1 × 10 -9 cm -3 That concludes the explanation. Furthermore, when lowering the carrier concentration of the oxide semiconductor film, The impurity concentration in the conductive film can be reduced to lower the defect level density. In this specification, High-purity intrinsic or substantially high-purity intrinsic refers to a product with a low impurity concentration and a low defect level density. Furthermore, oxide semiconductors with low carrier concentrations are subjected to high-purity intrinsic or substantially high-purity intrinsic oxidation. It is sometimes called a crystalline semiconductor.

[0533] Furthermore, oxide semiconductor films that are high-purity intrinsic or substantially high-purity intrinsic have a low defect level density. Therefore, the trap level density may also be low.

[0534] Furthermore, the time required for charges trapped in the trap levels of oxide semiconductors to disappear is long. Furthermore, it can behave as if it were a fixed charge. Therefore, it can behave as if it were a fixed charge. Transistors in which a channel formation region is formed in an oxide semiconductor exhibit unstable electrical properties. There are cases where this is the case.

[0535] Therefore, in order to stabilize the electrical characteristics of the transistor, the impurity concentration in the oxide semiconductor must be Reducing it is effective. Also, in order to reduce the impurity concentration in oxide semiconductors, It is also preferable to reduce the concentration of impurities in the contacting film. Examples of impurities include hydrogen, nitrogen, and aluminum. Examples include potash metals, alkaline earth metals, iron, nickel, and silicon.

[0536] <Impurities> Here, we will explain the effects of various impurities in oxide semiconductors.

[0537] In oxide semiconductors, if silicon or carbon, which are among the Group 14 elements, are present, the oxide Defect levels are formed in semiconductors. Therefore, silicon and carbon in oxide semiconductors. The concentration of silicon and carbon near the interface with the oxide semiconductor (by secondary ion mass spectrometry) SIMS (Secondary Ion Mass Spectrometry) The resulting concentration is 2 × 10 18 atoms / cm 3 The following is preferably 2 × 10 17 at oms / cm 3 The following applies:

[0538] Furthermore, if alkali metals or alkaline earth metals are present in the oxide semiconductor, defect levels are formed. And, it may generate carriers. Therefore, alkali metals or alkaline earth metals are included. Transistors using oxide semiconductors tend to exhibit normally-on characteristics. Therefore, the concentration of alkali metals or alkaline earth metals in oxide semiconductors obtained by SIMS. , 1 × 10 18 atoms / cm 3 The following is preferably 2 × 10 16 atoms / cm 3 Do the following:

[0539] Furthermore, in oxide semiconductors, when nitrogen is present, electrons, which are carriers, are generated. The concentration increases, making it easier to convert to n-type. As a result, oxide semiconductors containing nitrogen become semiconductors. The transistor used tends to exhibit normally-on characteristics. Alternatively, in oxide semiconductors... If nitrogen is present, a trap level may be formed. As a result, the transistor Electrical properties may become unstable. For this reason, in oxide semiconductors obtained by SIMS... The nitrogen concentration is 5 × 1019 atoms / cm 3 Less than 5 × 10 18 Atom s / cm 3 More preferably 1 × 10 18 atoms / cm 3 More preferably, is 5 x 10 17 atoms / cm 3 Do the following:

[0540] Furthermore, the hydrogen contained in oxide semiconductors reacts with the oxygen bonded to the metal atoms to form water. This can sometimes form an oxygen vacancy. When hydrogen enters this oxygen vacancy, the electrons, which are carriers, In some cases, this can be generated. Also, some of the hydrogen combines with oxygen that is bonded to a metal atom, resulting in a It can generate electrons, which are rear electrons. Therefore, using an oxide semiconductor containing hydrogen... Transistors tend to exhibit normally-on characteristics. Therefore, hydrogen in oxide semiconductors It is preferable that it be reduced as much as possible. Specifically, in oxide semiconductors, SIM The hydrogen concentration obtained by S is 1 × 10 20 atoms / cm 3 Less than 1 × 1 0 19 atoms / cm 3 Less than 5x10 18 atoms / cm 3 less than, More preferably 1 × 10 18 atoms / cm 3 Make it less than.

[0541] Using oxide semiconductors with sufficiently reduced impurities in the channel formation region of transistors. This allows for the provision of stable electrical characteristics.

[0542] This embodiment can be appropriately combined with other embodiments shown herein. .

[0543] (Embodiment 11) This embodiment describes an example of the configuration of an electronic device equipped with a functional panel according to one aspect of the present invention. do.

[0544] Figure 24(A) shows a perspective view of the glasses-type electronic device 5700. The electronic device 5700 is A pair of display panels 5701, a pair of housings 5702, a pair of optical components 5703, a pair of mounting parts It includes parts 5704, frame 5707, nose pads 5708, etc.

[0545] The electronic device 5700 displays on the display area 5706 of the optical component 5703 using the display panel 5701. The displayed image can be projected. Also, since the optical element 5703 is light-transmitting, The display is superimposed on the transmitted image visible through the optical element 5703 and displayed in the display area 5706. The displayed image can be viewed. Therefore, the electronic device 5700 is an electronic device capable of AR display. It is a device.

[0546] Furthermore, one or both of the housings 5702 are equipped with cameras capable of capturing images of the area in front. It is also possible that the housing 5702 has a wireless communication device, and that wireless communication device This allows for the supply of video signals, etc., to the enclosure 5702. Furthermore, instead of a wireless communication device, In addition to wireless communication devices, connectors that can connect to cables supplying video signals and power potential. It may also be equipped with a gyroscope. Furthermore, the housing 5702 may be equipped with an acceleration sensor such as a gyroscope. By doing so, the orientation of the user's head is detected, and an image corresponding to that orientation is displayed in area 570. It can also be displayed in 6.

[0547] Furthermore, one or both of the chassis 5702 may be provided with a processor. S is a camera, wireless communication device, pair of display panels 5701, etc., each of the electronic devices 5700 It has functions to control various components and functions to generate images. The processor It may also have a function to generate composite images for AR display.

[0548] Furthermore, wireless communication devices can be used to communicate data with external devices. For example, external The data transmitted from is output to the processor, and the processor, based on that data, A It is also possible to generate image data for R display. An example of data transmitted externally is... In addition to image data, this includes data containing biological information transmitted from biosensor devices, etc. These are some examples.

[0549] Next, using Figure 24(B), we will explain how to project an image onto the display area 5706 of the electronic device 5700. Let me explain the law. Inside the enclosure 5702, there is a display panel 5701. Furthermore, the optical element 5703 is provided with a reflector 5712, and the display area of ​​the optical element 5703 The portion corresponding to 5706 is provided with a reflective surface 5713 that functions as a half-mirror. .

[0550] Light 5715 emitted from the display panel 5701 is reflected by the reflector 5712 to the optical element 570 It is reflected towards side 3. Inside the optical member 5703, light 5715 is reflected towards the optical member 5703 The image is projected onto the reflective surface 5713 after repeated total internal reflection at the end face and reaching the reflective surface 5713. This casts a shadow. As a result, the user can see the light 5715 reflected by the reflective surface 5713 and the optical part Both the transmitted light 5716 that has passed through material 5703 (including the reflective surface 5713) can be seen. can.

[0551] Figure 24 shows an example where the reflector 5712 and the reflective surface 5713 each have curved surfaces. This allows for greater freedom in optical design compared to when these are planar. The thickness of the optical component 5703 can be reduced. 713 may be considered a plane.

[0552] As the reflector 5712, a material having a mirror surface can be used, and it is preferable that it has a high reflectivity. It seems so. Also, as the reflective surface 5713, a half-mirror that utilizes the reflection of a metal film is used. While this is also good, using a prism that utilizes total internal reflection can increase the transmittance of transmitted light 5716. It is possible.

[0553] Here, the housing 5702 has a lens between the display panel 5701 and the reflector 5712. It may also be possible. In this case, the housing 5702 may be such that the distance between the lens and the display panel 5701 is such that It is preferable to have a mechanism for adjusting these angles. This allows for focus adjustment and It becomes possible to enlarge or reduce images, for example, the lens or display panel 570. One or both of component 1 can be configured to be movable in the optical axis direction.

[0554] Furthermore, it is preferable that the housing 5702 has a mechanism that allows the angle of the reflector 5712 to be adjusted. i. By changing the angle of the reflector 5712, the position of the display area 5706 where the image is displayed can be changed. This makes it possible to change the display area to the optimal position according to the user's eye position. It becomes possible to place area 5706.

[0555] Furthermore, the housing 5702 is equipped with a battery 5717 and a wireless power supply module 5718. It is preferable that the electronic device 5700 has a separate battery 5717. It can be used without connecting a battery, thus increasing convenience. Furthermore, by having a wireless power supply module 5718, it can be charged wirelessly. Therefore, convenience and design can be improved. Furthermore, charging can be done via a wired connection using connectors, etc. Compared to other cases, this reduces the risk of failures such as poor contact, improving the reliability of the electronic device 5700. It can be improved.

[0556] The housing 5702 is equipped with a touch sensor module 5719. The Joule 5719 has a function to detect when the outer surface of the housing 5702 is touched. Figure 24(B) shows the outer surface of the housing 5702 being touched by a finger 5720. The touch sensor module 5719 allows the user to perform tap and slide operations, etc. It can detect and perform various actions. For example, it can pause a video with a tap. This allows you to perform actions such as stopping and resuming playback, and to fast-forward and rewind using slide controls. This makes it possible to perform actions such as [specific actions]. In addition, each of the two housings 5702 has a touch sensor module. By providing the 5719, the range of operation can be broadened.

[0557] The touch sensor module 5719 can be used with a variety of touch sensors. For example, capacitance, resistive film, infrared, electromagnetic induction, surface acoustic wave, and optical Various methods can be adopted, such as the electrostatic method. In particular, the capacitive method or the optical method It is preferable to apply the sensor to the touch sensor module 5719.

[0558] When using an optical touch sensor, a photoelectric converter is used as the light-receiving element. This is possible. The photoelectric conversion element can use an inorganic semiconductor for the active layer, or an organic semiconductor. Examples include those that use [this method].

[0559] The display panel 5701 may be fitted with a display device or a functional panel according to one aspect of the present invention. This is possible. Therefore, it is possible to create an electronic device 5700 capable of displaying extremely high resolution. Cut.

[0560] This embodiment can be appropriately combined with other embodiments described herein, at least in part. They can be implemented together.

[0561] For example, in this specification, etc., if it is explicitly stated that X and Y are connected The cases are when X and Y are electrically connected and when X and Y are functionally connected. The cases disclosed in this specification, etc., include the case where X and Y are directly connected. Therefore, the connection relationships are not limited to those shown in the diagram or text. In addition to the connections shown in the diagrams or text, other connections are also disclosed in the diagrams or text. do.

[0562] Here, X and Y are the object (e.g., device, element, circuit, wiring, electrode, terminal, conductive film, layer). (etc.)

[0563] One example of a case where X and Y are directly connected is when an electrical connection between X and Y is possible. Elements such as switches, transistors, capacitive elements, inductors, resistive elements, and dies. If the diode, display element, light-emitting element, load, etc. are not connected between X and Y and elements that enable electrical connection between X and Y (e.g., switches, transistors, capacitors). Without the need for elements such as components, inductors, resistors, diodes, display elements, light-emitting elements, loads, etc. This is the case when X and Y are connected.

[0564] One example of a case where X and Y are electrically connected is the ability to make an electrical connection between X and Y possible. Elements such as switches, transistors, capacitive elements, inductors, resistive elements, and dies. One or more devices (such as diodes, display elements, light-emitting elements, and loads) are connected between X and Y. Yes, it is possible. Furthermore, a switch has the function of being controlled to be on or off. In other words, a switch The switch can be in a conductive (on) or non-conductive (off) state, allowing current to flow. It has a function to control whether or not current flows. Alternatively, the switch selects the path through which current flows. It has a function to switch between them. Furthermore, if X and Y are electrically connected, X and This includes cases where Y is directly connected to it.

[0565] One example of a functional connection between X and Y is enabling a functional connection between X and Y. Circuits that perform this function (for example, logic circuits (inverters, NAND gates, NOR gates, etc.), signal transformers) Conversion circuits (DA conversion circuits, AD conversion circuits, gamma correction circuits, etc.), potential level conversion circuits (electric (Source circuits (boost circuits, buck circuits, etc.), level shifter circuits that change the potential level of a signal, etc.) Voltage source, current source, switching circuit, amplification circuit (which can increase signal amplitude or current amount, etc.) Circuits, operational amplifiers, differential amplifier circuits, source follower circuits, buffer circuits, etc., signal generation One or more circuits (such as memory circuits and control circuits) can be connected between X and Y. For example, even if another circuit is placed between X and Y, the signal output from X If the signal is transmitted to Y, then X and Y are assumed to be functionally connected. When X and Y are functionally connected, the situation is different from when X and Y are directly connected. This includes cases where and are electrically connected.

[0566] Furthermore, if it is explicitly stated that X and Y are electrically connected, then X and Y and When they are electrically connected (i.e., when there is another element or circuit between X and Y) (when connected) and when X and Y are functionally connected (i.e., X and Y are connected) (When functionally connected with another circuit in between) and when X and Y are directly connected In the case of (that is, when X and Y are connected without another element or circuit in between) and However, this shall be as disclosed in this specification, etc. That is, explicitly stated that they are electrically connected. If it is explicitly stated that it is connected, then Similar information is disclosed in this specification, etc.

[0567] For example, if the source (or first terminal, etc.) of the transistor is connected via Z1 (or via (In short), electrically connected to X, the drain (or second terminal, etc.) of the transistor is connected to Z. If Y is electrically connected via (or without) 2, or if the transistor source (or the first terminal, etc.) is directly connected to a part of Z1, and another part of Z1 is directly connected to X. They are directly connected, with the transistor's drain (or second terminal, etc.) directly connected to a portion of Z2. If it is connected to and another part of Z2 is directly connected to Y, it can be expressed as follows: It is possible to do so.

[0568] For example, "X and Y and the source (or first terminal, etc.) and drain (or second terminal) of the transistor." The terminals (such as the X terminal) are electrically connected to each other, and X is the source (or the X terminal) of the transistor. The electrical connections are in the following order: terminal 1, the drain of the transistor (or terminal 2, etc.), and Y. It can be expressed as "It is connected." Or, "The source (or the source) of the transistor." Terminal 1 (or terminal 2) is electrically connected to X, and the drain (or terminal 2) of the transistor is connected to X. (d) is electrically connected to Y, X is the source of the transistor (or the first terminal, etc.), and the transistor The drain (or second terminal, etc.) of the converter, Y, is electrically connected in this order. It can be expressed as "X is the source (or first terminal) of the transistor." Alternatively, "X is the source (or first terminal) of the transistor." Y is electrically connected to X via the drain (or second terminal, etc.) and X, the transistor The source of the transistor (or the first terminal, etc.), the drain of the transistor (or the second terminal, etc.) ), Y is provided in this connection order. By using a specific method of expression to define the order of connections in the circuit configuration, Distinguish between the source (or first terminal, etc.) and drain (or second terminal, etc.) of the zista. This allows us to determine the technical scope.

[0569] Alternatively, another way to express it is, for example, "the source (or first terminal, etc.) of the transistor." It is electrically connected to X via at least a first connection path, and the first connection path is It does not have a second connection path, and the aforementioned second connection path is via a transistor, The source (or first terminal, etc.) of the transistor and the drain (or second terminal, etc.) of the transistor. The path between ( and ), and the first connection path is a path via Z1, and the transit The drain (or second terminal, etc.) of the terminal is electrically connected to Y via at least a third connection path. They are connected in a manner, and the third connection path does not have the second connection path, and the third The connection path is the path via Z2. This can be expressed as "The transition The source of the starter (or the first terminal, etc.) is connected via Z1 through at least the first connection path. And, electrically connected to X, the first connection path does not have a second connection path, The second connection path has a connection path via a transistor, and the drain of the transistor (or a second terminal, etc.) is connected to Y via Z2 by at least a third connection path. It is expressed as: "They are electrically connected, and the third connection path does not have the second connection path." It is possible. Or, "the source (or first terminal, etc.) of the transistor is less Both are electrically connected to X via Z1 through a first electrical path, and the first electrical The target path does not have a second electrical path, and the second electrical path is the transistor From the source (or first terminal, etc.) to the drain (or second terminal, etc.) of the transistor It is an electrical path, and the drain (or second terminal, etc.) of the transistor is at least third The electrical path is electrically connected to Y via Z2, and the third electrical path is , it does not have a fourth electrical path, and the fourth electrical path is the drain of the transistor The electrical pulse from (or the second terminal, etc.) to the source (or the first terminal, etc.) of the transistor It can be expressed as "It is S." Using similar methods of expression as these examples, the circuit configuration By defining the connection path in the transistor, the source (or first terminal) To distinguish between the drain (or second terminal, etc.) and the second terminal, and to determine the technical scope. It is possible.

[0570] Note that these methods of expression are just examples and are not limited to these methods. Here, X Y, Z1, and Z2 are the objects (e.g., devices, elements, circuits, wiring, electrodes, terminals, conductive films, etc.) Let's assume it is a layer, etc.

[0571] Note that, in circuit diagrams, independent components are shown as being electrically connected to each other. Even in such cases, one component may possess the functions of multiple components. For example, if part of the wiring also functions as an electrode, one conductive film will perform the function of the wiring, and It possesses the functions of both components of the electrode's function. Therefore, the electrode in this specification A conductive connection is a situation where a single conductive film combines the functions of multiple components. Combined forms are also included in that category. [Explanation of Symbols]

[0572] ANO conductive film CC Color Conversion Layer C21 capacity C22 capacity GCLK signal G1 conductive film G2 Conductive film MD transistor MD2 transistor M21 Transistor N21 node N22 node PWC1 signal PWC2 signal S1g conductive film S2g conductive film SW21 Switch SW22 Switch SW23 Switch VCOM2 conductive film FPC1 Flexible Printed Circuit Board 104 Conductive film 106 Insulating film 108 Semiconductor film 108A area 108B area 108C area 112A conductive film 112B Conductive film 200 Information Processing Devices 210 Arithmetic equipment 211 Arithmetic section 212 Storage section 213 Artificial Intelligence Department 214 transmission line 215 Input / Output Interfaces 220 Input / Output Devices 230 Display section 231 areas 233 Timing Controller 234 Expansion circuit 235 Image Processing Circuit 238 Control Unit 240 Input section 241 detection area 250 detection unit 290 Communications Department 300 transistors 305 Conductor 305a Conductor 305b Conductor 305c conductor 312 Insulator 314 Insulator 316 Insulator 322 Insulator 324 Insulator 330 Oxides 330a Oxide 330b oxide 340 Conductors 340a Conductor 340b conductor 341 Insulator 341a Insulator 341b Insulator 342 Conductors 342a Conductor 342b Conductor 343 Oxides 343a Oxide 343b Oxide 346 Conductors 346a Conductor 346b Conductor 350 Insulator 350a insulator 350b insulator 360 Conductors 360a Conductor 360b conductor 371 Insulator 371a Insulator 371b Insulator 375 Insulator 380 Insulator 382 Insulator 383 Insulator 385 Insulator 501 Insulating Film 501A Insulating Film 501B insulating film 501C insulating film 501D insulating film 504 Conductive film 505 Encapsulating material 506 Insulating film 507A Conductive film 507B Conductive film 508 Semiconductor film 508A area 508B area 508C area 510 Base material 512A Conductive film 512B Conductive film 516 Insulating film 518 Insulating Film 519B terminal 519ga contacts 519GB contacts 520 Functional Layers 520B functional layer 521 Insulating film 521B Insulating Film 521C insulating film 521D insulating film 524 Conductive film 530G Pixel Circuit 550B element 550G Element 551 Electrode 551G electrode 552 Electrode 553 layers 553EM emissive layer 553N layer 553P layer 591G opening 700 Function Panel 700TP Function Panel 702B pixels 702G pixels 702R pixels 703 pixels 705 Sealing material 770 Base material 770P functional membrane 802 Detector 5200B Information Processing Unit 5210 Arithmetic unit 5220 Input / Output Device 5230 Display section 5240 Input Section 5250 Detection Unit 5290 Communications Department 5700 Electronic equipment 5701 Display Panel 5702 enclosure 5703 Optical components 5704 Mounting part 5706 Display area 5707 Frame 5708 Nose Pads 5712 Reflector 5713 Reflective surface 5715 light 5716 Transmitted light 5717 Battery 5718 Wireless Power Transfer Module 5719 Touch Sensor Module 5720 refers to

Claims

1. Having a first pixel, The first pixel is, Substrate and The above-mentioned color conversion layer on the substrate, A first element provided above the color conversion layer and having the function of emitting light, A first functional layer having a region located above the first element, The first element comprises gallium nitride, The color conversion layer has the function of converting the color of the light emitted by the first element to a different color. The first functional layer comprises a first insulating film and a pixel circuit above the first insulating film. The first insulating film has a region sandwiched between the pixel circuit and the first element, The first insulating film comprises a first film having a region covering the upper and side surfaces of the first element, a second film having a region in contact with the upper surface of the first film and containing silicon oxide, and a third film having a region in contact with the upper surface of the second film and containing silicon nitride. The aforementioned pixel circuit is A first conductive layer provided above the first insulating film and functioning as the first gate electrode of the first transistor, An oxide semiconductor layer provided above the first conductive layer and having a channel formation region for the first transistor, A second conductive layer is provided above the oxide semiconductor layer and functions as the second gate electrode of the first transistor, A second insulating film having a region located above the second conductive layer, The device comprises a third conductive layer provided above the second insulating film and electrically connected to the oxide semiconductor layer and each of the first elements, The third conductive layer is electrically connected to the first element through an opening provided in the second insulating film and an opening provided in the first insulating film. A functional panel wherein the second conductive layer is electrically connected to the first conductive layer.

2. Having a first pixel, The first pixel is, Substrate and The above-mentioned color conversion layer on the substrate, A first element provided above the color conversion layer and having the function of emitting light, A first functional layer having a region located above the first element, The first element comprises gallium nitride, The color conversion layer has the function of converting the color of the light emitted by the first element to a different color. The first functional layer comprises a first insulating film and a pixel circuit above the first insulating film. The first insulating film has a region sandwiched between the pixel circuit and the first element, The first insulating film comprises a first film having a region covering the upper and side surfaces of the first element, a second film having a region in contact with the upper surface of the first film and containing silicon oxide, and a third film having a region in contact with the upper surface of the second film and containing silicon nitride. The aforementioned pixel circuit is A first conductive layer provided above the first insulating film and functioning as the first gate electrode of the first transistor, A first oxide semiconductor layer provided above the first conductive layer and having a channel formation region for the first transistor, A second conductive layer provided above the first oxide semiconductor layer and functioning as the second gate electrode of the first transistor, A third conductive layer is provided above the first insulating film and functions as the first gate electrode of the second transistor, A second oxide semiconductor layer is provided above the third conductive layer and has a channel formation region for the second transistor, A fourth conductive layer provided above the second oxide semiconductor layer and functioning as the second gate electrode of the second transistor, A second insulating film having a region located above the second conductive layer and a region located above the fourth conductive layer, It has a fifth conductive layer provided above the second insulating film and electrically connected to the first oxide semiconductor layer and each of the first elements, The fifth conductive layer is electrically connected to the first element through an opening provided in the second insulating film and an opening provided in the first insulating film. The second conductive layer is electrically connected to the first conductive layer. The fourth conductive layer is electrically connected to the third conductive layer. A functional panel in which one of the sources and drains of the second transistor is electrically connected to the gate of the first transistor.

3. In claim 1 or 2, The oxide semiconductor layer is a functional panel containing indium.

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