Indication device

Abstract

To provide a liquid crystal display device with a high aperture ratio. [Solution] A liquid is placed between the first conductive layer, the second conductive layer, the third conductive layer and the fourth conductive layer. The liquid crystal element has a crystal layer, and the first to fourth conductive layers are translucent to visible light. Each has an overlapping region. Furthermore, the second conductive layer has a region that overlaps with the first conductive layer and the third conductive layer. It is provided between the electrode layers. Between the first conductive layer and the second conductive layer, and between the second conductive layer and the An insulating layer is provided between the conductive layer 3 and each other. Therefore, the second conductive layer is an electrode. The configuration consists of two capacitive elements stacked on top of each other. These two capacitive elements are light-transmitting, Because the liquid crystal elements are arranged in an overlapping configuration, the aperture ratio can be increased.

Description

Technical Field

[0001] One aspect of the present invention relates to a liquid crystal display device and an electronic device.

[0002] Note that one aspect of the present invention is not limited to the above technical field. The technical field of one aspect of the present invention includes, for example, semiconductor devices, display devices, light-emitting devices, power storage devices, memory devices, electronic devices, lighting devices, input devices (e.g., touch sensors, etc.), input / output devices (e.g., touch panels, etc.), their driving methods, or their manufacturing methods.

Background Art

[0003] In recent years, technology using metal oxides exhibiting semiconductor characteristics in transistors instead of silicon semiconductors has attracted attention. For example, Patent Document 1 and Patent Document 2 disclose a technique for fabricating a transistor using zinc oxide or an In-Ga-Zn-based oxide as a metal oxide and using the transistor as a switching element for pixels of a display device.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0005] Display devices using liquid crystal elements or light-emitting elements can display high-definition images by increasing the number of pixels per unit area. In the case of active display elements, each pixel includes a display element In addition to this, transistors, capacitive elements, and wiring must also be provided.

[0006] As the number of pixels per unit area increases, the amount of non-transparent components within each pixel increases. The area becomes relatively larger. In other words, the aperture ratio decreases. Therefore, the transmissive liquid crystal element In some cases, such as with children, the backlight intensity must be increased to display clear images. Power consumption will increase.

[0007] Furthermore, when the pixel area becomes very small, the transverse electric field mode, which arranges comb-shaped electrodes in the lateral direction, Designing liquid crystal elements is difficult, and it is also difficult to improve manufacturing yield.

[0008] Therefore, one aspect of the present invention aims to provide a liquid crystal display device with a high aperture ratio. Alternatively, one of the objectives is to provide a liquid crystal display device with low power consumption. One of its objectives is to provide a high-definition liquid crystal display device. Alternatively, a highly reliable liquid crystal display device. One of the objectives is to provide a crystal display device.

[0009] Furthermore, the description of these problems does not preclude the existence of other problems. One aspect of the present invention is It is not necessarily required to resolve all of these issues. Specifications, drawings, invoices. It is possible to extract other issues from the descriptions in the sections. [Means for solving the problem]

[0010] One aspect of the present invention relates to a liquid crystal display device provided with a capacitive element that is transparent to visible light. To relate to.

[0011] One aspect of the present invention relates to a display device having a first conductive layer, a second conductive layer, and a liquid crystal element. The first conductive layer is the region where the source or drain electrode of the transistor extends. The liquid crystal element has a third conductive layer, a liquid crystal layer and a fourth conductive layer, and the liquid crystal layer is the third A conductive layer is provided between the conductive layer and the fourth conductive layer, and the first to fourth conductive layers are transparent to visible light. The first to fourth conductive layers are photosensitive, and each has overlapping regions, and the second conductive layer It is provided between the first conductive layer and the third conductive layer, and between the first conductive layer and the second conductive layer. A first insulating layer is provided, and between the second conductive layer and the third conductive layer, there is a second insulating layer. A is provided, the second conductive layer has a first opening, and the first insulating layer and the second insulating layer are It has two openings, the second opening is located inside the first opening, and the third conductive layer is located inside the second This is a display device that is electrically connected to the first conductive layer through an opening.

[0012] Another aspect of the present invention includes a first conductive layer, a second conductive layer, and a liquid crystal element. A display device wherein the first conductive layer is a region in which the semiconductor layer of the transistor extends, and liquid The crystal element has a third conductive layer, a liquid crystal layer and a fourth conductive layer, and the liquid crystal layer is connected to the third conductive layer It is provided between the fourth conductive layer, and the first to fourth conductive layers are translucent to visible light. The first to fourth conductive layers each have regions that overlap with each other, and the second conductive layer is the first A conductive layer is provided between the conductive layer and the third conductive layer, and between the first conductive layer and the second conductive layer, An insulating layer is provided, and a second insulating layer is provided between the second conductive layer and the third conductive layer. The second conductive layer has a first opening, and the first insulating layer and the second insulating layer have a second opening The second opening is located inside the first opening, and the third conductive layer is located inside the second opening. This is a display device that is electrically connected to the first conductive layer.

[0013] The second conductive layer is a common electrode, and the first conductive layer, the second conductive layer and the first insulating layer are, It can be made to act as a capacitance element. Also, a second conductive layer, a third conductive layer and The second insulating layer can be made to act as a second capacitive element.

[0014] Metal oxides can be used for the first to fourth conductive layers.

[0015] Furthermore, the transistor has a fifth conductive layer that acts as a gate electrode. A metal oxide that is transparent to visible light may be used.

[0016] Furthermore, the fifth conductive layer may have a region that overlaps with the first to fourth conductive layers.

[0017] Furthermore, transistors preferably have a metal oxide in the semiconductor layer where the channel is formed. It's nice.

[0018] In this specification, a connector, such as an FPC (Flexible Printed Circuit), is used in the display unit. (Pinted circuit) or TCP (Tape Carrier Pack) A module with an age attached, a module with a printed circuit board at the end of the TCP. A chip on a substrate on which a glass or display element is formed is used in the COG (Chip On Glass) method. In some cases, modules with directly mounted ICs (integrated circuits) may also be included in the definition of a display device. [Effects of the Invention]

[0019] According to one aspect of the present invention, a liquid crystal display device with a high aperture ratio can be provided. Alternatively, We can provide a liquid crystal display device with low power consumption. Or, we can provide a high-definition liquid crystal display device. It can be provided. Or, a highly reliable liquid crystal display device can be provided.

[0020] Furthermore, the description of these effects does not preclude the existence of other effects. One aspect of the present invention is It is not necessarily required to have all of these effects. It is possible to extract effects other than those listed above. [Brief explanation of the drawing]

[0021] [Figure 1] A perspective view illustrating a pixel. [Figure 2] A perspective view illustrating a pixel. [Figure 3] Top view and cross-sectional view illustrating the pixels. [Figure 4] A perspective view illustrating a pixel. [Figure 5] Top view and cross-sectional view illustrating the pixels. [Figure 6] A perspective view illustrating a pixel. [Figure 7] A perspective view illustrating a pixel. [Figure 8] Top view and cross-sectional view illustrating the pixels. [Figure 9] A perspective view illustrating a pixel. [Figure 10] A perspective view illustrating a pixel. [Figure 11] Top view and cross-sectional view illustrating the pixels. [Figure 12] A top view illustrating the pixels. [Figure 13] A perspective view illustrating the display device. [Figure 14] A perspective view illustrating the touch panel and input device. [Figure 15] A cross-sectional view illustrating a display device. [Figure 16] A cross-sectional view illustrating a display device. [Figure 17] A cross-sectional view illustrating a display device. [Figure 18] A diagram illustrating the arrangement of pixels. [Figure 19] A diagram showing an example of an operating mode. [Figure 20] A diagram showing an example of an electronic device. [Modes for carrying out the invention]

[0022] Embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. Without departing from the spirit and scope of the present invention, its form and details may be changed in various ways. Those skilled in the art will readily understand that further improvements are possible. Therefore, the present invention can be implemented as follows: It is not to be interpreted as being limited to the description of the form.

[0023] In the configuration of the invention described below, the same part or part having a similar function is included. The same reference numerals are used consistently across different drawings, and explanations of their repetition are omitted. When referring to the function of [this], the hatch pattern is the same, and sometimes no specific symbol is assigned.

[0024] Furthermore, the position, size, and extent of each component shown in the drawings are, for the sake of ease of understanding, actually The location, size, and range may not be described. Therefore, the disclosed invention is not always Furthermore, it is not limited to the location, size, scope, etc., disclosed in the drawings.

[0025] Note that the words "membrane" and "layer" may differ in some cases or depending on the situation. Therefore, they can be interchanged. For example, the term "conductive layer" can be replaced with "conductive film." It is possible to change the term to "insulating film". Alternatively, for example, the term "insulating film" can be changed to It is possible to change the term to "insulating layer".

[0026] In this specification and elsewhere, "metal oxide" refers to a broad term for metals. It is an oxide. Metal oxides are oxide insulators and oxide conductors (including transparent oxide conductors). Oxide semiconductors (also called OS) They are classified into the following categories. For example, when a metal oxide is used in the semiconductor layer of a transistor, the metal Oxides are sometimes referred to as oxide semiconductors. Therefore, when referring to them as OS transistors... In this context, it can be rephrased as a transistor having a metal oxide or oxide semiconductor. ru.

[0027] Furthermore, in this specification, metal oxides containing nitrogen are also referred to as metal oxides (metal oxi They are sometimes collectively referred to as (de) metal oxides (met It may also be called al oxynitride.

[0028] (Embodiment 1) This embodiment describes a display device according to one aspect of the present invention.

[0029] A display device according to one aspect of the present invention comprises a first conductive layer, a second conductive layer, and a liquid crystal element. Furthermore, the liquid crystal element has a configuration in which a liquid crystal layer is provided between a third conductive layer and a fourth conductive layer. .

[0030] The first to fourth conductive layers are translucent to visible light and each has overlapping regions. Furthermore, the second conductive layer is provided between the first conductive layer and the third conductive layer.

[0031] Between the first conductive layer and the second conductive layer, and between the second conductive layer and the third conductive layer, Each is provided with an insulating layer. Therefore, the two capacitive elements with the second conductive layer as an electrode are combined It will have a layered structure.

[0032] These two capacitive elements are light-transmitting, and the liquid crystal elements overlap, thus increasing the aperture ratio. This can be done to reduce the power consumption of the display device. It can achieve higher resolution.

[0033] Figure 1 is a perspective view illustrating the main elements provided in the pixels of a liquid crystal display device according to one embodiment of the present invention. Yes. Figure 2 is a view of the same perspective drawing unfolded vertically. For clarity, the insulating layer and other components have been omitted, simplifying the design.

[0034] Pixel 10a consists of wiring 31, wiring 32, transistor 21, conductive layer 42, and conductive layer 4 It has 3 and .

[0035] Here, wiring 31 functions as a scan line. Wiring 32 functions as a signal line. Wiring 31 and 32 include a low-resistance metal layer to prevent signal delay. It is preferable to form it with [this material].

[0036] Furthermore, a portion of the wiring 31 and the region where the wiring 31 extends serve as the gate of the transistor 21. It has the function of [missing information]. Depending on the material used in the channel region of transistor 21, light irradiation This can cause the characteristics of transistor 21 to change. A highly light-shielding metal layer is used for wiring. By using 31, ambient light or backlight light is irradiated onto the channel area. This can suppress and improve the reliability of transistor 21.

[0037] Transistor 21 is a bottom-gate type transistor, and consists of a semiconductor layer 25 and a conductive layer 41a It has a conductive layer 41b and

[0038] The conductive layer 41a functions as either a source or a drain. It is electrically connected to wiring 32.

[0039] The conductive layer 41b functions as either a source or a drain. b functions as one or the other electrode of the capacitive element.

[0040] The conductive layer 42 functions as one or the other electrode of the capacitive element. Electrode 2 is a common electrode and also functions as a capacitance line.

[0041] The conductive layer 43 functions as a pixel electrode of the liquid crystal element. It functions as one or the other electrode of the child.

[0042] The conductive layer 42 has an opening 42b. In addition, at the opening 42b, the conductive layer 41b and the conductive layer Layer 43 is electrically connected.

[0043] A first insulating layer (not shown in Figures 1 and 2) is provided between the conductive layer 41b and the conductive layer 42. Therefore, conductive layers 41b and 42 are used as electrodes, and the first insulating layer is used as a dielectric. A capacitive element 26 can be formed.

[0044] Furthermore, a second insulating layer (not shown in Figures 1 and 2) is provided between the conductive layer 42 and the conductive layer 43. Therefore, conductive layers 42 and 43 are used as electrodes, and the second insulating layer is used as a dielectric. A capacitive element 27 can be formed in this manner.

[0045] Figure 3(A) is a top view of pixel 10a. As shown in Figure 3(A), wiring 31 and In the region excluding line 32, conductive layer 41b, conductive layer 42, and conductive layer 43 overlap each other. Arrange them so that they have a region.

[0046] Here, in one aspect of the present invention, conductive layer 41b, conductive layer 42, conductive layer 43, first insulating layer The second insulating layer is formed from a material that is transparent to visible light. The conductive layer 43, which also functions as a pixel electrode, and the capacitive element 26 and the capacitive element 27 overlap in the region. The region will be translucent. Therefore, the aperture ratio of pixel 10a can be increased. .

[0047] Figure 3(B) is a cross-sectional view corresponding to the cross-section of the line segment A1-A2 shown in Figure 3(A). (C) is a cross-sectional view corresponding to the cross-section of line segment A3-A4 shown in Figure 3(A). In 3(B) and (C), the substrate 71, substrate 72, and liquid crystal element 7 are not shown in Figure 2. 5. Cross-sections of the colored layer 65, the light-shielding layer 66, etc. are also shown.

[0048] The liquid crystal element 75 is transmissive and operates in longitudinal electric field mode. The liquid crystal element 75 has a conductive layer 43 and The structure can have an alignment film 61, a liquid crystal layer 63, an alignment film 62, and a conductive layer 64. Cut.

[0049] Furthermore, insulating layers are provided between each element as needed. Between the wiring 31 and the semiconductor layer 25 The insulating layer 51 provided functions as a gate insulating film of the transistor 21. Conductive layer 41 The insulating layers 52 and 53 provided on b function as a protective film and a planarizing film, respectively. In addition, the insulating layer 55 provided between the colored layer 65 and the light-shielding layer 66 and the common electrode is It functions as a protective film and a planarizing film. Note that the insulating layer described above is just one example; other insulating layers are also available. An edge layer may be provided. Alternatively, a configuration in which part of the insulating layer described above is omitted may also be provided. good.

[0050] Here, the region where the conductive layer 41b, insulating layer 52, insulating layer 53, and conductive layer 42 overlap is capacitance It functions as element 26. Also, the region where the conductive layer 42, insulating layer 54 and conductive layer 43 overlap. This functions as a capacitive element 27. That is, the liquid crystal display device according to one aspect of the present invention is It has a stacked capacitive element with common electrodes.

[0051] As the number of pixels per unit area increases, the area of ​​each pixel inevitably becomes smaller, thus creating a shape within the pixel. The capacitance value of the resulting capacitive element becomes smaller. Therefore, the ability to retain the image signal deteriorates. In one aspect of the present invention, a laminate having a region in which the capacitive element 26 and the capacitive element 27 overlap. Although it is of the same type, since one electrode is common, capacitive elements 26 and 27 are connected in parallel. Therefore, it is possible to increase the capacitance value compared to a configuration that provides only one of the capacitive elements. This allows for the suppression of a decrease in the ability to retain image signals.

[0052] Furthermore, a capacitive element 26 having a conductive layer 41b and a conductive layer 42, and conductive layer 42 and conductive layer The capacitive element 27 having 43 is transparent to visible light.

[0053] Therefore, when the backlight is shone from the substrate 71 side, the light will be directed in the direction indicated by the dashed arrow. The light is emitted to the aperture 42b. The backlight also passes through the aperture 42b.

[0054] As shown in Figures 3(B) and (C), the backlight light is absorbed to the outside through the colored layer 65. It may be released. By releasing it via the colored layer 65, the light can be colored to the desired color. Yes, it's possible. The 65 colors of the colored layer are red (R), green (G), blue (B), cyan (C), and maize. You can choose from options such as tan (M), yellow (Y), etc. Note that the backlight is illuminated by the circuit board. It is also acceptable to irradiate from the 72 side.

[0055] As described above, by using the configuration of one aspect of the present invention, a liquid crystal display device with a high aperture ratio can be produced. It is possible to form a clear image without increasing the intensity of the backlight. This allows for the display of information and reduces the power consumption of the liquid crystal display device.

[0056] A liquid crystal display device according to one aspect of the present invention has a configuration having pixels 10b as shown in the perspective view in Figure 4(A). It's okay to have it.

[0057] Figure 4(B) is a perspective view of the transistor 21 and wiring 31 in pixel 10b. Element 10b has a different configuration of the conductive layer that functions as the gate of transistor 21 compared to pixel 10a. ru.

[0058] Pixel 10a is configured to use the region where the wiring 31 extends as a gate, but pixel 10b Therefore, a conductive layer 33 that is transparent to visible light is used as the gate. The area of ​​the optical wiring 31 can be reduced.

[0059] Figure 5(A) is a top view of pixel 10b. Figure 5(B) shows the line segment B1- shown in Figure 5(A). This is a cross-sectional view corresponding to the cross-section of B2. Figure 5(C) shows the line segment B3-B4 shown in Figure 5(A). This is a cross-sectional view corresponding to the cut surface.

[0060] In pixel 10b, in the area excluding wiring 31 and wiring 32, the conductive layer 33 and other elements Regions where elements overlap also possess light transmission. For example, the semiconductor layer 25 and conductive layer 4 of transistor 21. Light can be transmitted to the contact area with 1b and to the channel area of ​​transistor 21. Therefore, the aperture ratio can be improved compared to pixel 10a. Note that transistor 2 The semiconductor layer 25 of 1 is formed of a material that is transparent to visible light, regardless of the pixel configuration. It is possible.

[0061] In Figures 4(A), (B) and 5(A), wiring 31 is formed on the conductive layer 33. The diagram shows a configuration to obtain an electrical connection, but a conductive layer 33 may be formed on the wiring 31. .

[0062] Furthermore, a liquid crystal display device according to one aspect of the present invention has pixels 10c as shown in the perspective views of Figures 6 and 7. The following configuration may be used. Pixel 10c has a transistor structure, except for pixels 10a and 10b. It has a similar configuration to the one described above.

[0063] Pixel 10c is configured using a self-aligned top-gate structure for the transistor. The transistor 22 consists of a semiconductor layer 25, a conductive layer 41a, a conductive layer 41b, and a conductive layer 34 It has.

[0064] The conductive layer 41a functions as either a source or a drain. The conductive layer 41b is It functions as either a source or a drain. Furthermore, the conductive layer 41b is a capacitive element. It functions as one or the other electrode. The conductive layer 34 functions as a gate. ru.

[0065] Figure 8(A) is a top view of pixel 10c. Figure 8(B) shows the line segment C1- shown in Figure 8(A). This is a cross-sectional view corresponding to the cross-section of C2. Figure 8(C) shows the line segment C3-C4 shown in Figure 8(A). This is a cross-sectional view corresponding to the cut surface.

[0066] In pixel 10c, in the region excluding wiring 31, wiring 32 and conductive layer 34, semiconductor layer 2 The area where 5 and other elements overlap is also translucent. Therefore, improving the aperture ratio This is possible. Note that the conductive layer 34 can be formed from a low-resistance material such as metal, as shown in Figure 12. As shown in (A), the conductive layer 34 is replaced with a conductive layer 34b that is transparent to visible light. This configuration may be used. This configuration can further improve the aperture ratio.

[0067] Furthermore, as shown in Figure 8(B), in the case of a top-gate structure transistor, the substrate 71 and It is preferable to provide an insulating layer 56 between the semiconductor layer 25 and the insulating layer 56. Due to the shielding effect of the insulating layer 56 This prevents impurities from diffusing from the substrate 71 to the semiconductor layer 25. When an oxide semiconductor is used for 25, excess oxygen in the insulating layer 56 and protective film 57 causes semi-oxidation. This can fill in oxygen deficiencies in the conductive layer 25, thereby improving the reliability of the transistor. Cut.

[0068] Furthermore, a liquid crystal display device according to one aspect of the present invention has a structure having pixels 10d as shown in Figures 9 and 10. It may also be formed. Pixel 10d differs in the shape of the semiconductor layer 25, the conductive layer 41a and the conductive layer It has the same configuration as pixel 10c, except that it does not have an electrolytic layer 41b.

[0069] In transistor 22, the semiconductor layer 25 functions as either the source or the drain. It has a region 25b and a region 25c that functions as the other of a source or drain.

[0070] In the transistor 22 of pixel 10c, the source or drain of region 25b is configured as follows: The configuration is such that a conductive layer 41a is connected, but in the transistor 22 of the pixel 10d, region 2 5b and wiring 32 are directly connected.

[0071] Furthermore, the transistor 22 of pixel 10c has either a source or a drain in region 25c. The configuration involves connecting a conductive layer 41b that functions in a manner, with the conductive layer 41b serving as the electrode of the capacitive element 26. It is used in this way. On the other hand, in the transistor 22 of pixel 10d, the region 25c is extended to It is used as an electrode for the quantitative element 26.

[0072] Therefore, steps such as forming conductive layers 41a and 41b can be omitted. Manufacturing costs can be reduced.

[0073] Figure 11(A) is a top view of pixel 10d. Figure 11(B) shows the line segment shown in Figure 11(A). This is a cross-sectional view corresponding to the section D1-D2. Figure 11(C) shows the line segment shown in Figure 11(A). This is a cross-sectional view corresponding to the D3-D4 section.

[0074] In pixel 10d, similar to pixel 10c, the region excluding wiring 31, wiring 32, and conductive layer 34. In this region, the area where the semiconductor layer 25 and other elements overlap is also transparent. Therefore, The frequency can be improved. Furthermore, as shown in Figure 12(B), the conductive layer 34 is exposed to visible light. It may be replaced with a transparent conductive layer 34b. With this configuration, This can improve the aperture ratio.

[0075] Furthermore, since pixel 10d does not have a conductive layer 41b, the transmittance at the aperture is also greater than that of pixel 10c. The price will also increase.

[0076] As shown in Figure 11(B), the semiconductor layer 25 is a region 25 that functions as a channel formation region. a, region 25b which functions as either a source or a drain, and source or drain It has a region 25c that functions as the other side of region 25b. Regions 25b and 25c are low-resistance regions. Therefore, by using the conductive layer 34 as a mask to perform plasma treatment, doping treatment, etc. This can be formed by introducing impurities into the semiconductor layer 25 and generating oxygen vacancies. .

[0077] The following materials can be used for transistors, wiring, capacitive elements, etc. These materials are the visible light-transmitting semiconductor layer in other configuration examples shown in this embodiment. It can also be applied to conductive layers.

[0078] The semiconductor layer of a transistor can be formed using a translucent semiconductor material. It is possible. Translucent semiconductor materials include metal oxides or oxide semiconductors (Oxid Examples include (e Semiconductor). Oxide semiconductors have at least index It is preferable that it contains um. It is particularly preferable that it contains indium and zinc. In addition to these, aluminum, gallium, yttrium, copper, vanadium, beryllium, Boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, Lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium It may include one or more species selected from Um, etc.

[0079] The conductive layer of a transistor can be formed using a light-transmitting conductive material. The light-transmitting conductive material is one selected from indium, zinc, and tin, or It is preferable to include multiple types. Specific examples of light-transmitting conductive materials include In oxide and I n-Sn oxide (also known as ITO: Indium Tin Oxide), In-Zn acid In-W oxides, In-W-Zn oxides, In-Ti oxides, In-Sn-Ti acids Examples include oxides, In-Sn-Si oxides, Zn oxides, and Ga-Zn oxides.

[0080] Furthermore, the conductive layer of the transistor is made to contain impurity elements to reduce its resistance. Oxide semiconductors may also be used. The oxide semiconductor with reduced resistance is an oxide conductor (OC: It can be called an Oxide Conductor.

[0081] For example, in oxide conductors, oxygen vacancies are formed in the oxide semiconductor, and hydrogen is added to these oxygen vacancies. This causes a donor level to form near the conduction band. As a result, the oxide semiconductor becomes highly conductive and turns into a conductor.

[0082] Note that oxide semiconductors have a large energy gap (for example, an energy gap of 2 (It is above 0.5 eV) and therefore has light transmission to visible light. Also, as mentioned above, oxidation A conductor is an oxide semiconductor that has a donor level near the conduction band. Therefore, oxide Conductors exhibit little influence from absorption due to donor levels, and their absorption is similar to that of oxide semiconductors for visible light. It has light-transmitting properties.

[0083] Furthermore, oxide conductors contain one or more metal elements in the semiconductor layer of the transistor. It is preferable to have. An oxide semiconductor having the same metal element constitutes a transistor. By using it in two or more layers, the manufacturing equipment (e.g., film deposition equipment, processing equipment, etc.) can be reduced to two or more. Since it can be used in common in the processes described above, manufacturing costs can be reduced.

[0084] By using the pixel configuration of the liquid crystal display device shown in this embodiment, the backlight unit The light emitted from the source can be used efficiently. Therefore, power consumption is reduced. Furthermore, it is possible to provide a superior liquid crystal display device.

[0085] Next, the liquid crystal display device of this embodiment will be described using Figure 13. Figure 13 shows the display This is a perspective view of device 100A, with a portion enlarged for illustration. Note that in Figure 13, clarification is achieved. Therefore, the substrate 72 is shown with a dashed line, and components such as the polarizing plate 67 are omitted from the illustration.

[0086] The display device 100A has a display unit 162 and a drive circuit unit 164. The FPC172 and IC173 are implemented in this device.

[0087] The display unit 162 has multiple pixels and has the function of displaying an image. It has subpixels. Note that in Figure 13, pixel 10a is shown as an example of a subpixel, but pixel 1 0b, pixel 10c, or pixel 10d may also be used.

[0088] For example, by subpixels that exhibit red, subpixels that exhibit green, and subpixels that exhibit blue The formation of a single pixel allows the display unit 162 to display in full color. Furthermore, the colors exhibited by subpixels are not limited to red (R), green (G), and blue (B). These include colors such as white (W), yellow (Y), magenta (M), or cyan (C). Sub-pixels may also be used. Note that in this specification, sub-pixels may be simply referred to as pixels. ru.

[0089] The display device 100A has one or both of the scanning line drive circuit and the signal line drive circuit. It may be done. Or, it may not have both a scan line drive circuit and a signal line drive circuit. This is also acceptable. If the display device 100A has a sensor such as a touch sensor, the display device 100A It may have a sensor drive circuit. In this embodiment, the drive circuit section 164 is: An example with a scan line driving circuit is shown. The scan line driving circuit runs along the scan lines of the display unit 162. It has the function of outputting a verification signal.

[0090] In the display device 100A, IC173 is mounted on the substrate 71 using a mounting method such as the COG method. IC173 is installed in, for example, signal line drive circuits, scan line drive circuits, and sensors. It has one or more drive circuits.

[0091] The display device 100A is electrically connected to the FPC172. The IC173 and the drive circuit section 164 are supplied with signals and power from an external source. The IC173 can output signals externally via the FPC172.

[0092] The FPC172 may have an IC mounted on it. For example, the FPC172 may have a signal line drive An IC having one or more of the following: a motion circuit, a scanning line drive circuit, and a sensor drive circuit. It may be implemented.

[0093] Signals and power are supplied to the display unit 162 and the drive circuit unit 164 via wiring 165. The signal and power are transmitted from IC173 or from an external source via FPC172. This is input to wiring 165.

[0094] Furthermore, an input device 167 can be provided on the circuit board 72. The configuration with the 167 component can be made to function as a touch panel.

[0095] The detection element (also called a sensor element) of a touch panel according to one embodiment of the present invention is not limited. Various sensors capable of detecting the proximity or contact of an object to be detected, such as a finger or stylus. It can be applied as a detection element.

[0096] Examples of sensor types include capacitive, resistive, surface acoustic wave, and infrared sensors. Various methods can be used, such as optical, pressure-sensitive, and other similar methods.

[0097] In this embodiment, a touch panel having a capacitive sensing element will be used as an example for explanation. .

[0098] Capacitive capacitance methods include surface capacitance and projected capacitance. Capacitive capacitance methods include self-capacitance methods and mutual capacitance methods. This is preferable because it enables simultaneous multi-point detection.

[0099] A touch panel according to one aspect of the present invention is formed by bonding together a separately manufactured display device and a detection element. The configuration includes a substrate supporting the display element and a detection element on one or both of the opposing substrates. Various configurations can be applied, such as those that include electrodes.

[0100] Figures 14(A) and (B) show examples of touch panels. Figure 14(A) shows touch panel 3 This is a perspective view of 50A. Figure 14(B) is a schematic perspective view of the input device 167. For clarity, only representative components are shown.

[0101] The touch panel 350A has a configuration in which a display device and a sensing element, which were manufactured separately, are bonded together. be.

[0102] The touch panel 350A has an input device 167 and a display device 100A, and these are stacked It is provided as such.

[0103] The input device 167 consists of a circuit board 163, electrodes 127 and 128, multiple wirings 137, and multiple connections. It has a wire 138 and a plurality of wires 139. For example, electrode 127 is wire 137 or wire It can be electrically connected to 139. Also, electrode 128 is electrically connected to wiring 139. It is possible. FPC172b is each of the multiple wirings 137 and multiple wirings 138 It is electrically connected to the FPC172b. IC173b can be installed in FPC172b.

[0104] Alternatively, a touch sensor may be provided between the substrate 71 and substrate 72 of the display device 100A. If a touch sensor is provided between substrate 71 and substrate 72, a capacitive touch sensor is used. In addition, an optical touch sensor using a photoelectric conversion element may be applied.

[0105] Figure 15(A) is a cross-sectional view including the display unit 162, the drive circuit unit 164, and the wiring 165. Figure 15(A) is an example of applying the pixel configuration 10a shown in Figures 1 to 3. However, the same configuration is obtained when pixel 10b, as shown in Figures 4 and 5, is applied.

[0106] As shown in Figure 15(A), the display device 100A consists of a substrate 71, a transistor 21, and a transistor Zistor 22, liquid crystal element 75, alignment film 61, alignment film 62, connection part 68, adhesive layer 73, colored layer It includes 65, a light-shielding layer 66, an insulating layer 55, a substrate 72, and a polarizing plate 130, etc.

[0107] The display unit 162 is provided with a transmissive liquid crystal element 75 that operates in vertical electric field mode. The crystal element 75 has a conductive layer 43 that functions as a pixel electrode and a conductive layer 64 that acts as a common electrode. , and has a liquid crystal layer 63. Due to the electric field generated between the conductive layer 43 and the conductive layer 64, liquid crystal The orientation of layer 63 can be controlled. The liquid crystal layer 63 is positioned between the alignment film 61 and the alignment film 62. Place it.

[0108] Liquid crystal materials include positive-type liquid crystal materials, where the dielectric anisotropy (Δε) is positive, and negative-type liquid crystal materials, where the dielectric anisotropy (Δε) is negative. There are two liquid crystal materials. In one aspect of the present invention, either material can be used, and the applicable model The optimal liquid crystal material can be used depending on the code and design.

[0109] Liquid crystal elements 75 can be liquid crystal elements to which various modes are applied. For example, V A (Vertical Alignment) mode, TN (Twisted Neural) tic) mode, IPS (In-Plane-Switching) mode, ASM (A xially Symmetric aligned Micro-cell) mode, OCB(Optically Compensated Birefringence) Mode, FLC (Ferroelectric Liquid Crystal) mode , AFLC (AntiFerroelectric Liquid Crystal) model Electrically Controlled Birefring (ECB) Liquid crystal elements to which modes such as ence mode, VA-IPS mode, guest host mode, etc. are applied. It can be used.

[0110] Furthermore, the display device 100A employs a normally black type liquid crystal element, for example, VA mode. A transmissive liquid crystal element may also be used. As for VA mode, MVA (Multi-Do main Vertical Alignment) mode, PVA(Patterne) d Vertical Alignment) mode, ASV (Advanced Su Modes such as (per View) can be used.

[0111] Furthermore, a liquid crystal element is an element that controls the transmission or non-transmission of light through the optical modulation effect of liquid crystals. Yes. The optical modulation effect of liquid crystals is due to the electric field acting on the liquid crystal (horizontal electric field, vertical electric field or It is controlled by an electric field (including one in an oblique direction). As for the liquid crystal used in the liquid crystal element, Thermo ropic liquid crystal, low molecular liquid crystal, polymer liquid crystal, polymer dispersed liquid crystal (PDLC) Dispersed Liquid Crystal, ferroelectric liquid crystal, antiferroelectric liquid crystal Crystals and the like can be used. Depending on the conditions, these liquid crystal materials can form a cholesteric phase, smear crystals, etc. It exhibits phases such as the kuttic phase, cubic phase, chiral nematic phase, and isotropic phase.

[0112] Since the display device 100A is a transmissive liquid crystal display device, the conductive layer 43 and the conductive layer 64 Both use conductive materials that transmit visible light. In addition, the conductive layer of transistor 21 One or more of these can be made of a conductive material that transmits visible light. At least a portion of the area where transistor 21 is located is also used as an area effective for display. It is possible.

[0113] Examples of conductive materials that transmit visible light include indium (In), zinc (Zn), and tin. It is preferable to use a material containing one or more selected elements from (Sn). Specifically, indioxide Contains um, indium tin oxide (ITO), indium zinc oxide, and tungsten oxide. Indium oxide, indium zinc oxide containing tungsten oxide, and titanium oxide containing Indium oxide, indium tin oxide containing titanium oxide, indium tin oxide containing silicon oxide Examples include tin oxide (ITSO), zinc oxide, and zinc oxide containing gallium. A film containing graphene can also be used. A film containing graphene is, for example, graphene oxide. A film containing this can be formed by reduction.

[0114] The conductive layer 33, conductive layer 34, conductive layer 41a, conductive layer 41b, conductive layer included in the display unit 162 42, one or more of the conductive layer 43 and conductive layer 64 are a form of metal oxide It is preferable to use an oxide conductive layer. The oxide conductive layer is the semiconductor layer 2 of the transistor 21. It is preferable that the material in 5 contains one or more metal elements. For example, the oxide conductive layer is Preferably containing indium, In-M-Zn oxide (where M is Al, Ti, Ga, Y) It is even more preferable that the film is made of Zr, La, Ce, Nd, Sn, or Hf.

[0115] Also, conductive layer 33, conductive layer 34, conductive layer 41a, conductive layer 41b, conductive layer 42, conductive layer 43 And one or more of the conductive layers 64 are made of an oxide semiconductor which is a form of a metal oxide. It may be formed using the same metal element oxide semiconductor as a layer constituting the display device. By using it in two or more layers, the manufacturing equipment (e.g., film deposition equipment, processing equipment, etc.) can be two or more Because it can be used in common throughout the process, manufacturing costs can be reduced.

[0116] Oxide semiconductors have at least one of the following characteristics: oxygen vacancies in the film and the concentration of impurities such as hydrogen and water in the film. On the one hand, it is a semiconductor material whose resistance can be controlled. Therefore, oxide semiconductors A treatment that increases at least one of oxygen deficiency and impurity concentration in the layer, or oxygen deficiency and By selecting a treatment that reduces at least one of the impurity concentrations, the oxide conductive layer can be modified. The resistivity can be controlled.

[0117] Furthermore, the oxide conductive layer formed using the oxide semiconductor layer has a carrier density of Highly resistive, low-resistance oxide semiconductor layer, conductive oxide semiconductor layer, or highly conductive oxide It can also be called a crystalline semiconductor layer.

[0118] Furthermore, by forming the oxide semiconductor layer and the oxide conductive layer with the same metal element, manufacturing costs can be reduced. This can be reduced. For example, by using metal oxide targets with the same metal composition. This allows for a reduction in manufacturing costs. In addition, the oxide semiconductor layer and the oxide conductive layer The etching gas or etching solution used during processing can be used in common. Even if the oxide semiconductor layer and the oxide conductive layer have the same metal element, if their compositions are different... There are cases where metal elements in the film are detached during the manufacturing process of a display device, resulting in a different metal composition. This can sometimes happen.

[0119] In the display device 100A, a colored layer 65 and a light-shielding layer 66 are provided on the liquid crystal layer 63. An insulating layer 55 is provided between the colored layer 65 and the light-shielding layer 66 and the liquid crystal layer 63. This is preferable. The insulating layer 55 contains impurities contained in the colored layer 65 and the light-shielding layer 66, etc., and is a liquid crystal layer. In addition to suppressing diffusion to 63, it also functions as a planarization film.

[0120] Substrates 71 and 72 are bonded together by an adhesive layer 73. The liquid crystal layer 63 is sealed in the region surrounded by 2 and the adhesive layer 73.

[0121] When the display device 100A is to function as a transmissive liquid crystal display device, the polarizing plate is used in the display unit 16 Two are placed so as to sandwich 2. Figure 15 shows the polarizing plate 67 on the substrate 72 side. Light from the backlight, which is positioned outside the polarizing plate on the plate 71 side, passes through the polarizing plate. Then it is incident. At this time, the voltage applied between conductive layer 43 and conductive layer 64 causes the liquid crystal layer 63 The orientation of the polarizer can be controlled, and the optical modulation of light can be controlled. That is, via the polarizer 67 The intensity of the emitted light can be controlled. In addition, the incident light is controlled by the colored layer 65 to a specific degree. Because light outside the wavelength range is absorbed, the emitted light is, for example, red (R), blue (B), and The light will be green (G).

[0122] Furthermore, as a polarizing plate, for example, a circular polarizing plate can be used. Alternatively, a device consisting of a linear polarizer and a quarter-wavelength phase difference plate can be used. This reduces the viewing angle dependency of the display on the display device.

[0123] Furthermore, the liquid crystal element 75 may be driven using a guest-host liquid crystal mode. When using the liquid crystal mode, it is not always necessary to use both or one of the polarizing plates. By reducing light absorption by the plate, the light extraction efficiency is increased, and the display of the display device becomes brighter. It is possible.

[0124] The drive circuit section 164 has a transistor 23. The transistor 23 acts as a gate. It has a conductive layer 37, a gate insulating film, a semiconductor layer, a conductive layer 35, and a conductive layer 36. One of the electrolytic layer 35 and the conductive layer 36 functions as a source, and the other functions as a drain. .

[0125] The transistors provided in the drive circuit section 164 do not necessarily have the function of transmitting visible light. It is not necessary. Therefore, the conductive layer 36 and conductive layer 37 use a low-resistance metal layer or the like. It is possible.

[0126] At connection point 68, the wiring 165 and the conductive layer 44 are connected, and the conductive layer 44 and the connector 45 are connected. In other words, at the connection point 68, the wiring 165 is connected via the conductive layer 44 and the connector 45, FP It is electrically connected to C172. With this configuration, distribution from FPC172 Signal and power can be supplied to line 165.

[0127] Transistors 21 and 22 have the same structure, but different structures. This is also fine. In other words, the transistors in the drive circuit section 164 and the transistors in the display section 162 The inverter may have the same structure or a different structure. Also, the drive circuit section 164 However, it may have transistors of multiple structures, or the display unit 162 may have transistors of multiple structures It may have a lunger.

[0128] Note that in Figure 15(A), one gate is provided for the transistor channel formation region. The diagram shows a configuration, but as shown in Figure 15(B), transistor 23 is channel type A configuration in which two gates, conductive layer 35 and conductive layer 38, are provided so as to sandwich the formed region may also be used.

[0129] The conductive layer 35 and the conductive layer 38 can be configured to supply different potentials to each other. It is possible. Alternatively, the two can be electrically connected. In the former case, the transistor threshold It is effective for voltage control.

[0130] Furthermore, a transistor with two gates that are electrically connected is a transistor that is not connected to other transistors. Compared to this, it is possible to increase the field effect mobility and increase the on-current. As a result, it is possible to create circuits that can operate at high speed. Furthermore, the footprint of the circuit section is reduced. It becomes possible to reduce the product. By applying a transistor with a large on-current, the display Even if the number of wires increases due to the enlargement or increased resolution of the device, the signal delay in each wire It is possible to reduce this and suppress display unevenness. By applying this configuration, highly reliable transistors can be realized.

[0131] Furthermore, if a conductive layer 38 is provided for the pixel 10b shown in Figures 4 and 5, the conductive layer 38 It is preferable to form it with a material that is transparent to visible light.

[0132] Figure 16(A) shows the display device 100 when the pixel 10c configuration shown in Figures 6 to 8 is applied. This is a cross-sectional view of A. Figure 17(A) also shows the configuration of pixel 10d as shown in Figures 9 to 11. This is a cross-sectional view of the display device 100A when used. The drive circuit section 164 contains a transistor 24 A system will be established.

[0133] The transistors provided in the drive circuit section 164 do not necessarily have the function of transmitting visible light. It is not necessary. Therefore, the conductive layer 36 and conductive layer 37 use a low-resistance metal layer or the like. can be done.

[0134] Figures 16(B) and 17(B) are cross-sectional views when a configuration in which two gate electrodes are provided for the transistors 22 and 24 is applied. is applied.

[0135] When providing the conductive layer 38 for the pixel 10c shown in FIG. 12(A) and the pixel 10d shown in FIG. 12(B), the conductive layer 38 is also preferably formed of a material having translucency with respect to visible light. is preferred. is preferred.

[0136] FIG. 18 is a top view showing an example of an arrangement when the pixel 10a is used as a sub-pixel. R, G, and B shown in the drawing indicate an example of the color of the coloring layer 65 provided on the sub-pixel. The pixel arrangement is preferably arranged by inverting the pixel layout for each row in order to reduce the viewing angle dependency. Note that the arrangements of the pixels 10b, 10c, and 10d can be the same. are shown. is preferred. Note that the arrangements of the pixels 10b, 10c, and 10d can be the same. can be.

[0137] Next, details of materials and the like that can be used for each component of the display device of the present embodiment will be described. Note that descriptions of components that have already been described may be omitted. Also, the following materials can be appropriately used for the display device, touch panel, and their components described below. and will be described. Note that descriptions of components that have already been described may be omitted. Also, and the following materials can be appropriately used for the display device, touch panel, and their components described below. can be used as appropriate.

[0138] ≪Substrates 71 and 72≫ There is no significant limitation on the material of the substrate included in the display device of one aspect of the present invention, and various substrates can be used. For example, a glass substrate, a quartz substrate, a sapphire substrate, a semiconductor substrate, a ceramic substrate, a metal substrate, or a plastic substrate can be used. can be used. substrate, a metal substrate, or a plastic substrate can be used.

[0139] By using a thin substrate, the display device can be made lighter and thinner. Furthermore, by using a substrate with a thickness sufficient to be flexible, a flexible display device can be realized. can.

[0140] A display device according to one aspect of the present invention involves forming transistors and the like on a fabricated substrate, and then on another substrate. It is fabricated by transposing transistors and other components onto it. By using the fabricated substrate, the characteristics can be improved. Formation of good transistors, formation of transistors with low power consumption, and durable display devices To improve manufacturing, provide heat resistance to display devices, reduce the weight of display devices, or make display devices thinner. This is possible. The substrate on which the transistor is transposed is capable of forming the transistor. Not limited to circuit boards, but also paper circuit boards, cellophane circuit boards, stone circuit boards, wood circuit boards, cloth circuit boards (natural fibers (silk) Cotton, linen, synthetic fibers (nylon, polyurethane, polyester) or regenerated fibers (A (including cete, cupro, rayon, recycled polyester), leather substrate, or rubber A substrate or similar material can be used.

[0141] Transistors 21, 22, 23, 24 Each transistor in a display device according to one aspect of the present invention is either a top-gate type or a bottom-gate type. Either a T-shaped structure is acceptable. Alternatively, gate electrodes may be provided above and below the channel. The semiconductor material used in the transistor is not particularly limited; for example, oxide semiconductors, Examples include silicon and germanium.

[0142] The crystallinity of semiconductor materials used in transistors is not particularly limited; amorphous semiconductors, Semiconductors with crystalline properties (microcrystalline semiconductors, polycrystalline semiconductors, single-crystal semiconductors, or those with a crystalline region in part) Any semiconductor (having a region) may be used. If a semiconductor with crystalline properties is used, This is preferable because it suppresses the degradation of the DISTA characteristics.

[0143] For example, elements of Group 14, compound semiconductors, or oxide semiconductors can be used in the semiconductor layer. Yes, it can. Typically, this includes semiconductors containing silicon, semiconductors containing gallium arsenide, or indium. Oxide semiconductors containing these materials can be applied to semiconductor layers.

[0144] It is preferable to apply an oxide semiconductor to the semiconductor in which the transistor channel is formed. It is particularly preferable to use oxide semiconductors with a larger band gap than silicon. Using semiconductor materials with a wider band gap and lower carrier density than silicon This is preferable because it reduces the current when the transistor is off.

[0145] By using oxide semiconductors, fluctuations in electrical properties are suppressed, resulting in highly reliable transistors. It can be achieved.

[0146] Furthermore, its low off-current allows the charge stored in the capacitor via the transistor to be released over a long period of time. It is possible to hold it in this way. By applying such transistors to pixels, the display It also becomes possible to stop the drive circuit while maintaining the gradation of the image. This enables the creation of display devices with reduced power consumption.

[0147] Transistors 21, 22, 23, and 24 are made of highly purified oxide that suppresses the formation of oxygen vacancies. It is preferable to have a semiconductor layer. This lowers the off-current of the transistor. This allows for longer holding times of electrical signals such as image signals, and enables power-on behavior. In this state, the writing interval can also be set long. Therefore, the frequency of the refresh operation can be reduced, and the effect of suppressing power consumption is achieved. And because the frequency of the refresh operation can be reduced, the effect of suppressing power consumption is achieved.

[0148] In addition, since transistors 21, 22, 23, and 24 can obtain a relatively high field-effect mobility, they can be driven at high speed. By using such a transistor capable of high-speed driving in a display device, the transistors in the display unit and the transistors in the drive circuit unit can be formed on the same substrate. That is, as a drive circuit, there is no need to separately use a semiconductor device formed by a silicon wafer or the like, so the number of components of the display device can be reduced. Also, in the display unit, by using a transistor capable of high-speed driving, a high-quality image can be provided. In the display unit, by using a transistor capable of high-speed driving, a high-quality image can be provided.

[0149] ≪Insulating layer≫ As an insulating material that can be used for each insulating layer, spacer, etc. of the display device, an organic insulating material or an inorganic insulating material can be used. Examples of the organic insulating material include acrylic resin, epoxy resin, polyimide resin, polyamide resin, polyimide amide resin, silsesquioxane resin, benzocyclobutene-based resin, and phenol resin. Examples of the inorganic insulating layer include silicon oxide film, silicon oxynitride film, silicon nitride oxide film, silicon nitride film, aluminum oxide film, hafnium oxide film, yttrium oxide film, zirconium oxide film, gallium oxide film, tantalum oxide film, magnesium oxide film, lanthanum oxide film, cerium oxide film, and neodymium oxide film. As an organic insulating material, for example, acrylic resin, epoxy resin, polyimide resin, polyamide resin, polyimide amide resin, silsesquioxane resin, benzocyclobutene-based resin, and phenol resin can be mentioned. As an organic insulating material, for example, acrylic resin, epoxy resin, polyimide resin, polyamide resin, polyimide amide resin, silsesquioxane resin, benzocyclobutene-based resin, and phenol resin can be mentioned. As an organic insulating material, for example, acrylic resin, epoxy resin, polyimide resin, polyamide resin, polyimide amide resin, silsesquioxane resin, benzocyclobutene-based resin, and phenol resin can be mentioned. Examples of the inorganic insulating layer include silicon oxide film, silicon oxynitride film, silicon nitride oxide film, silicon nitride film, aluminum oxide film, hafnium oxide film, yttrium oxide film, zirconium oxide film, gallium oxide film, tantalum oxide film, magnesium oxide film, lanthanum oxide film, cerium oxide film, and neodymium oxide film. Examples of the inorganic insulating layer include silicon oxide film, silicon oxynitride film, silicon nitride oxide film, silicon nitride film, aluminum oxide film, hafnium oxide film, yttrium oxide film, zirconium oxide film, gallium oxide film, tantalum oxide film, magnesium oxide film, lanthanum oxide film, cerium oxide film, and neodymium oxide film. Examples of the inorganic insulating layer include silicon oxide film, silicon oxynitride film, silicon nitride oxide film, silicon nitride film, aluminum oxide film, hafnium oxide film, yttrium oxide film, zirconium oxide film, gallium oxide film, tantalum oxide film, magnesium oxide film, lanthanum oxide film, cerium oxide film, and neodymium oxide film. Examples of the inorganic insulating layer include silicon oxide film, silicon oxynitride film, silicon nitride oxide film, silicon nitride film, aluminum oxide film, hafnium oxide film, yttrium oxide film, zirconium oxide film, gallium oxide film, tantalum oxide film, magnesium oxide film, lanthanum oxide film, cerium oxide film, and neodymium oxide film.

[0150] ≪Conductive layer≫ In addition to the gates, sources, and drains of the transistors, various wirings and electrodes of the display device​ The conductive layers include aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, etc. Metals such as nium, molybdenum, silver, tantalum, or tungsten, or materials mainly composed of these. The alloy can be used as a single-layer or multi-layer structure. For example, aluminum A two-layer structure in which a titanium film is laminated on a tungsten film, and a two-layer structure in which a titanium film is laminated on a tungsten film. A two-layer structure with a copper film laminated on a molybdenum film, and an alloy film containing molybdenum and tungsten. A two-layer structure with a copper film laminated on top, or a copper film laminated on top of a copper-magnesium-aluminum alloy film. A two-layer structure, a titanium film or titanium nitride film, and a layer on top of the titanium film or titanium nitride film. An aluminum film or copper film is laminated, and then a titanium film or titanium nitride film is formed on top of it. A three-layer structure comprising a molybdenum film or molybdenum nitride film, and the molybdenum film or molybdenum nitride film. An aluminum film or copper film is laminated on top of the ribdenum film, and then a molybdenum film is placed on top of that. Alternatively, there are three-layer structures that form a molybdenum nitride film. For example, the conductive layer is made into a three-layer structure. In this case, the first and third layers contain titanium, titanium nitride, molybdenum, tungsten, and molybdenum. Alloys containing molybdenum and tungsten, alloys containing molybdenum and zirconium, or nitrides A film is formed of ribdenum, and the second layer consists of copper, aluminum, gold or silver, or copper and ma It is preferable to form a film made of a low-resistance material such as an alloy of tangan. Indium oxide containing tungsten, indium zinc oxide containing tungsten oxide, acid Indium oxide containing titanium dioxide, indium tin oxide containing titanium dioxide, indium nitrile Transparent conductive materials such as lead oxide and ITSO may also be used.

[0151] Alternatively, an oxide conductive layer may be formed by controlling the resistivity of the oxide semiconductor.

[0152] ≪Adhesive layer 73≫ The adhesive layer 73 can be a hard resin such as a thermosetting resin, a photocuring resin, or a two-component curable resin. Chemical resins can be used. For example, acrylic resin, urethane resin, epoxy resin, Alternatively, siloxane resins or the like can be used.

[0153] <Connector 45> For example, the connector 45 may be an anisotropic conductive film (ACF). Conductive Film), or anisotropic conductive paste (ACP: Anisot You can use things like ropic conductive paste.

[0154] ≪Colored layer 65≫ The colored layer 65 is a colored layer that transmits light in a specific wavelength range. Materials that can be used include metal materials, resin materials, and resin materials containing pigments or dyes. These are some examples.

[0155] ≪Light blocking layer 66≫ The light-shielding layer 66 is provided, for example, between adjacent colored layers 65 of different colors. For example, metal A black matrix formed using a resin material containing pigments or dyes. This can be used as the light-shielding layer 66. Note that the light-shielding layer 66 is used in the drive circuit section 164, etc. Providing it in areas other than the display unit 162 is preferable because it can suppress light leakage due to guided light, etc. stomach.

[0156] Thin films (insulating films, semiconductor films, conductive films, etc.) that make up a display device are each subjected to sputtering. Chemical vapor deposition (CVD) method Vacuum deposition, pulsed laser deposition (PLD) tion) method, Atomic Layer Deposition (ALD) method It can be formed using methods such as the CVD method. An example of the CVD method is plasma chemical vapor deposition (P Examples include the ECVD method and the thermal CVD method. An example of the thermal CVD method is organometallic chemical vapor deposition. One example is the Metal Organic CVD (MOCVD) method.

[0157] The thin films that make up the display device (insulating films, semiconductor films, conductive films, etc.) are each spin-coated, Dip, spray coating, inkjet printing, dispensing, screen printing, offset Printing, doctor knife, slit coat, roll coat, curtain coat, knife coat It can be formed by methods such as [mention specific method].

[0158] The thin films that make up the display device can be processed using photolithography or other methods. Alternatively, island-like thin films may be formed by a film deposition method using a shielding mask. Even if you process the thin film using methods such as imprinting, sandblasting, or lift-off, Good. In photolithography, a resist mask is formed on the thin film to be processed, A method for processing the thin film by etching or the like to remove the resist mask, and a photosensitive A method of forming a thin film, then exposing and developing it to process the thin film into a desired shape, There is.

[0159] In photolithography, the light used for exposure is, for example, the i-line (wavelength 365nm). ), g-line (wavelength 436nm), h-line (wavelength 405nm), and light obtained by mixing these. These include using ultraviolet light, KrF laser light, or ArF laser light. This is also possible. Alternatively, exposure may be performed using immersion lithography. The light used for exposure is: Examples include extreme ultraviolet (EUV) light and X-rays. It is also possible to use an electron beam instead of light for exposure. EUV, X Using a wire or electron beam is preferable because it allows for extremely fine processing. When exposure is performed by scanning a beam such as a sub-beam, a photomask is not required. be.

[0160] Thin film etching can be performed using dry etching, wet etching, or sandblasting. These can be used.

[0161] As a result, a liquid crystal display device with a high aperture ratio and low power consumption can be manufactured.

[0162] This embodiment can be combined with other embodiments as appropriate.

[0163] (Embodiment 2) In this embodiment, the operating modes that can be performed by a display device according to one aspect of the present invention are shown in Figure I will explain using 19.

[0164] Note that the following assumes a normal frame rate (typically between 60Hz and 240Hz). The system operates in a normal drive mode and an idle stop (I) mode that operates at a low frame frequency. The DS) drive mode will be explained with an example.

[0165] Note that IDS drive mode is a mode in which, after the image data writing process is performed, the image data is written This refers to a driving method that stops the changeover. Image data is written first, and then the next... By extending the interval until the image data is written, the time required to write the image data during that period is reduced. This reduces power consumption. The IDS drive mode is, for example, the normal drive mode. The frame frequency can be set to about 1 / 100 to 1 / 10 of that of the standard. Still images are continuous The video signal is the same between frames. Therefore, the IDS drive mode displays still images. This is particularly effective in the following cases. By using IDS drive to display images, power consumption is reduced. In addition to reducing screen flicker, it also suppresses eye strain.

[0166] Figures 19(A) to 19(C) show the circuit diagram of the pixel circuit, and the normal drive mode and IDS drive mode. This is a timing chart explaining the operating modes. Note that in Figure 19(A), the liquid crystal element 50 Figure 1 shows the pixel circuit 506 electrically connected to the liquid crystal element 501. In the pixel circuit 506 shown in 19(A), the signal line SL and the gate line GL and the signal line SL A transistor M1 connected to the gate line GL, and a capacitance element connected to transistor M1. Child Cs LC This indicates that.

[0167] Transistor M1 can be a leak path for data D1. Therefore, transistor M1 A smaller off-current is preferable. The transistor M1 is a semiconductor in which the channel is formed. It is preferable to use a transistor that has a metal oxide in its body layer. The metal oxide provides amplification. If the metal oxide has at least one of the following functions: rectification and switching, then the metal oxide , metal oxide semiconductor or acid It can be called an oxide semiconductor, or OS for short. The following is a typical example of a transistor, where an oxide semiconductor is used in the semiconductor layer where the channel is formed. This will be explained using a transistor (also called an "OS transistor") that uses [a specific type of transistor]. ZISTA has lower leakage current in the non-conductive state than transistors using polycrystalline silicon, etc. It has the characteristic of having an extremely low off-current. Furthermore, the pixel electrodes of the liquid crystal element 501 and the transistor... Either the source or drain of M1, and the node to which the capacitive element CsLC is connected is not Let's call it node ND1. By using an OS transistor for transistor M1, node ND1 is supplied It can retain the supplied charge for a long period of time.

[0168] Furthermore, in the circuit diagram shown in Figure 19(A), the liquid crystal element 501 is also part of the leak path for data D1. Therefore, in order to properly drive the IDS, the resistivity of the liquid crystal element 501 should be 1.0 × 1 0 14 It is preferable that the density be Ω·cm or greater.

[0169] Furthermore, the channel region of the above OS transistor may contain, for example, In-Ga-Zn oxide, I n-Zn oxide and the like can be suitably used. Also, the above In-Ga-Zn oxide and Therefore, typically, a composition with an atomic ratio of In:Ga:Zn = 4:2:4.1 is used. It is possible.

[0170] Figure 19(B) shows the signals supplied to the signal line SL and gate line GL in normal drive mode. This is a timing chart showing the waveform of the number. In normal drive mode, the normal frame frequency ( For example, it operates at 60Hz. Figure 19(B) shows the period from T1 to T3. Each frame A scanning signal is applied to the gate line GL during the period, and data D1 is transmitted from the signal line SL to the liquid crystal element 501. and capacitive element Cs LC The operation to write to is performed. This operation is the same for the period T1 to T3. The same applies when writing data D1, or when writing different data.

[0171] On the other hand, Figure 19(C) shows the signal line SL and gate line GL in IDS drive mode, respectively This is a timing chart showing the waveform of the signal being applied. In IDS drive, the frame frequency is low. It operates at a wavenumber (e.g., 1 Hz). One frame period is represented as period T1, and within that period the data The writing period is period T. W The data retention period is set to period T. RET It is represented as follows. The IDS drive mode is , period T W Then, a scan signal is applied to the gate line GL, and data D1 is written to the signal line SL, and the period T RET Then, the gate wire GL is fixed to a low voltage level, and transistor M1 is in a non-conducting state. Then, the operation is performed to retain the data D1 that was written. Note that the frame frequency is low and For example, it could be set to between 0.1 Hz and 60 Hz.

[0172] Therefore, by using the IDS drive mode, power consumption can be reduced.

[0173] This embodiment can be combined with other embodiments as appropriate.

[0174] (Embodiment 3) In this embodiment, it is used in the semiconductor layer of the transistor disclosed in one aspect of the present invention. This section explains the metal oxides that can be produced. Note that metal oxides are used in the semiconductor layer of transistors. In such cases, the term "metal oxide" may be replaced with "oxide semiconductor."

[0175] Oxide semiconductors can be divided into single-crystal oxide semiconductors and non-single-crystal oxide semiconductors. As for crystalline oxide semiconductors, CAAC-OS (c-axis-aligned crystals Polycrystalline oxide semiconductor, n c-OS(nanocrystalline oxide semiconductor ), pseudo-amorphous oxide semiconductor (a-like OS: amorphous-like o Examples include xide semiconductors and amorphous oxide semiconductors.

[0176] Furthermore, the semiconductor layer of the transistor disclosed in one aspect of the present invention includes CAC-OS(Clo ud-Aligned Composite oxide semiconductor ) may also be used.

[0177] Furthermore, the semiconductor layer of the transistor disclosed in one aspect of the present invention is the non-single-crystal oxide described above. Semiconductors or CAC-OS can be suitably used. Also, non-single-crystal oxide semiconductors and In this regard, nc-OS or CAAC-OS can be suitably used.

[0178] In one aspect of the present invention, it is preferable to use CAC-OS as the semiconductor layer of the transistor. It seems that using CAC-OS gives transistors high electrical characteristics or high reliability. It can be granted.

[0179] The following provides a detailed explanation of CAC-OS.

[0180] CAC-OS or CAC-metal oxide has conductive properties in some parts of the material. In addition, a portion of the material has insulating properties, while the material as a whole has semiconductor properties. Furthermore, CAC-OS or CAC-metal oxide is used in the transistor channel. When used in a formation region, its conductive function is to allow electrons (or holes) that act as carriers to flow. The insulating function is the function of preventing the flow of electrons, which act as carriers. By having the insulating function and the switching function work complementaryly, the switching function (O This function (to enable or disable the on / off state) is imparted to CAC-OS or CAC-metal oxide. This is possible. In CAC-OS or CAC-metal oxide, each By separating these functions, it is possible to maximize the performance of both.

[0181] Furthermore, CAC-OS or CAC-metal oxide provides conductive and insulating properties. It has conductive regions. The conductive regions have the conductive function described above, and the insulating regions have the insulating function described above. It has the function of being conductive. Furthermore, within the material, the conductive region and the insulating region are separated by nanoparticles. In some cases, they are separated by a bell. Also, conductive regions and insulating regions are located within the material. It may be unevenly distributed. Also, the conductive region appears blurred around the edges and connected in a cloud-like manner when observed. There are cases where this can happen.

[0182] Furthermore, in CAC-OS or CAC-metal oxide, the conductive region and the insulating region The marginal region is defined as being between 0.5 nm and 10 nm, preferably between 0.5 nm and 3 nm. These particles may be dispersed in the material at the following sizes.

[0183] Furthermore, CAC-OS or CAC-metal oxide has different band gaps. It is composed of the following components. For example, CAC-OS or CAC-metal oxi de consists of a component with a wide gap due to the insulating region and a component with a wide gap due to the conductive region. It consists of a component having a low gap. In this configuration, when the carrier is flowing... In components with a narrow gap, the carrier mainly flows. A component having a wide gap acts complementaryly with a component having a narrow gap. In conjunction with the components, carriers also flow to components with a wide gap. Therefore, the above C AC-OS or CAC-metal oxide is applied to the channel formation region of the transistor. When used, a high current driving force is required in the transistor's ON state, i.e., a large ON current. Furthermore, high field-effect mobility can be obtained.

[0184] In other words, CAC-OS or CAC-metal oxide is a matrix composite material. (matrix composite) or metal matrix composite (metal m It can also be called an atrix composite.

[0185] CAC-OS, for example, has elements constituting the metal oxide that are between 0.5 nm and 10 nm in size. Preferably, the material is composed of particles that are unevenly distributed in size of 1 nm to 2 nm or in that vicinity. In the following, in metal oxides, one or more metal elements are unevenly distributed. The region containing the metal element is 0.5 nm to 10 nm, preferably 1 nm to 2 nm. A mixture of particles smaller than or near the size of m is also called a mosaic or patchy appearance.

[0186] Furthermore, it is preferable that the metal oxide contains at least indium. In particular, indium and It is preferable to include zinc. In addition to these, aluminum, gallium, and t Lithium, copper, vanadium, beryllium, boron, silicon, titanium, iron, nickel, gel Magnesium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, ta One or more selected from tantalum, tungsten, or magnesium may be included It may be.

[0187] For example, in In-Ga-Zn oxide, CAC-OS (among CAC-OS, In-G a-Zn oxide may be particularly referred to as CAC-IGZO) refers to indium oxide( Hereinafter, InO X1 (Let X1 be a real number greater than 0)), or indium zinc oxide (Hereinafter, In X2 Zn Y2 ​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​Yes. In this specification, for example, the atomic ratio of In to element M in the first region is The first region is greater than the atomic ratio of In to element M in the second region. Assume that the concentration of In is higher compared to the other region.

[0189] Note that IGZO is a common name and refers to a single compound composed of In, Ga, Zn, and O. There are combinations. A typical example is InGaO3(ZnO). m1 (m1 is a natural number), or In ( 1+x0) Ga (1-x0) O3(ZnO) m0 (-1≦x0≦1, m0 is any number) Examples of crystalline compounds include those that are produced.

[0190] The above crystalline compounds have a single-crystal structure, a polycrystalline structure, or a CAAC structure. A CAAC structure is one in which multiple IGZO nanocrystals have c-axis orientation and in the ab-plane. This is a crystal structure in which the elements are linked without orientation.

[0191] On the other hand, CAC-OS relates to the material composition of metal oxides. CAC-OS is In, Ga In a material composition containing Zn and O, it was observed that Ga was the main component in part of the nanoparticles. The region is observed to be mo This refers to a configuration in which elements are randomly dispersed in a zigzag pattern. Therefore, in CAC-OS, Crystal structure is a secondary factor.

[0192] Furthermore, CAC-OS does not include a layered structure of two or more films with different compositions. For example, a structure consisting of two layers, one with In as the main component and the other with Ga as the main component, is included. do not have.

[0193] Note that GaO X3 The region in which is the main component, and In X2 Zn Y2 O Z2 , or InO X1 but In some cases, a clear boundary may not be observable between the principal component region and the surrounding area.

[0194] Note that aluminum, yttrium, copper, vanadium, and beryllium can be used instead of gallium. Boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum Lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium If it contains one or more metallic elements selected from cium, etc., CAC-O S is observed in a region that is mainly composed of the metal element in the form of nanoparticles, and in a region that is mainly composed of In. The regions observed in the nanoparticles that make up the component are each randomly dispersed in a mosaic pattern. It refers to the composition of the group.

[0195] CAC-OS is formed, for example, by sputtering under conditions where the substrate is not intentionally heated. It is possible. Also, when forming CAC-OS by sputtering, the deposition gas and Then, selected from inert gases (typically argon), oxygen gas, and nitrogen gas. You may use one or more of them. Also, the oxygen in relation to the total flow rate of the deposition gas during film formation. A lower gas flow rate ratio is preferable; for example, a flow rate ratio of oxygen gas of 0% or more and less than 30% is preferable. Alternatively, it is preferable to have a value of 0% or more and 10% or less.

[0196] CAC-OS is a type of X-ray diffraction (XRD) measurement method. When measured using the θ / 2θ scan method, which is the only Out-of-plane method, It has the characteristic of not showing a clear peak. In other words, from X-ray diffraction, the measurement area It can be seen that no orientation is observed in the ab-plane direction or the c-axis direction.

[0197] Furthermore, CAC-OS irradiates with an electron beam (also called a nanobeam electron beam) with a probe diameter of 1 nm. In the electron diffraction pattern obtained by doing so, there is a ring-shaped region of high brightness and the ring Multiple bright spots are observed in the region. Therefore, from the electron diffraction pattern, CAC-OS The crystal structure of is non-oriented in both the planar and cross-sectional directions, nc(nano- It can be seen that it has a crystal structure.

[0198] For example, in CAC-OS in In-Ga-Zn oxide, energy-dispersive X-rays Spectroscopy (EDX: Energy Dispersive X-ray spectroscopy) GaO X3 The region in which is the main component and In X2 Zn Y2 O Z2 , or InO X1 Regions where it is the main component are unevenly distributed and mixed. It can be confirmed that it has the following structure.

[0199] CAC-OS has a different structure from IGZO compounds in which metal elements are uniformly distributed, It has different properties from ZO compounds. In other words, CAC-OS is GaO X3 These are the main components. In a certain area, X2 Zn Y2 O Z2 , or InO X1 The region in which is the main component, and It exhibits phase separation, and has a mosaic-like structure in which regions composed of each element are the main components.

[0200] Here, In X2 Zn Y2 O Z2 , or InO X1 The region in which is the main component is GaO X3 Compared to regions where these are the main components, this region has high conductivity. In other words, In X2 Zn Y 20 Z2 , or InO X1 In the region where this is the main component, the carrier flows, causing oxidation. Conductivity as a material semiconductor is exhibited. Therefore, In X2 Zn Y2 O Z2 , or In O X1 Regions where this is the main component are distributed in a cloud-like manner within the oxide semiconductor, resulting in a high electric field. Effective mobility (μ) can be achieved.

[0201] On the other hand, GaO X3 Regions in which these are the main components are In X2 Zn Y2 O Z2 , or InO X This region has higher insulating properties compared to the region where 1 is the main component. In other words, GaO X3 etc. The distribution of the main component region within the oxide semiconductor suppresses leakage current and improves performance. It can perform itching operations.

[0202] Therefore, when CAC-OS is used in semiconductor devices, GaO X3 Insulation caused by factors such as And, In X2 Zn Y2 O Z2 , or InO X1 The conductivity resulting from this works in a complementary manner. This allows for the realization of high on-current and high field-effect mobility (μ). .

[0203] Furthermore, semiconductor devices using CAC-OS have high reliability. Therefore, CAC-OS is It is ideal for various semiconductor devices, including displays.

[0204] This embodiment can be combined with other embodiments as appropriate.

[0205] (Embodiment 4) Electronic devices that can use a display device according to one aspect of the present invention include display devices and personal computers. Computer, image storage device or image playback device equipped with recording medium, mobile phone, mobile Game consoles including mobile data terminals, e-readers, video cameras, digital still cameras Cameras such as RA, goggle-type displays (head-mounted displays), navigation systems Audio systems, sound reproduction equipment (car audio, digital audio players, etc.), copying Machines, fax machines, printers, multifunction printers, automated teller machines (ATMs), self Examples include vending machines. Specific examples of these electronic devices are shown in Figure 20.

[0206] Figure 20(A) shows a digital camera, consisting of a housing 961, a shutter button 962, and a microphone 9 63, speaker 967, display unit 965, operation keys 966, zoom lever 968, lens 9 It has 69, etc. A display device according to one aspect of the present invention can be used for the display unit 965.

[0207] Figure 20(B) shows a wristwatch-type information terminal, comprising a housing 931, a display unit 932, and a wristband 9 33, it has operating buttons 935, a crown 936, a camera 939, etc. The display unit 932 is It may be a touch panel. The display unit 932 uses a display device according to one aspect of the present invention. It is possible.

[0208] Figure 20(C) shows an example of a mobile phone, consisting of a casing 951, a display unit 952, and operation buttons 953. It has an external connection port 954, a speaker 955, a microphone 956, a camera 957, etc. The mobile phone is equipped with a touch sensor on the display unit 952. To make a call or enter text... All operations, such as pressing a button, are performed by touching the display unit 952 with a finger or stylus. This is possible. A display device according to one aspect of the present invention can be used in the display unit 952.

[0209] Figure 20(D) shows a portable data terminal, which includes a housing 911, a display unit 912, a camera 919, etc. The display unit 912 has a touch panel function that allows for the input and output of information. The display unit 912 can use a display device according to one aspect of the present invention.

[0210] Figure 20(E) shows a television, consisting of a casing 971, a display unit 973, operation keys 974, and a speaker 9 75, it has a communication connection terminal 976, an optical sensor 977, etc. The display unit 973 has a touch sensor A slot is provided, and input operations can be performed. The display unit 973 displays a display according to one aspect of the present invention. The device can be used.

[0211] Figure 20(F) shows an information processing terminal, consisting of a housing 901, a display unit 902, a display unit 903, and a sensor. It has 904, etc. Display unit 902 and display unit 903 consist of a single display panel and are flexible. It possesses flexibility. Furthermore, the housing 901 is also flexible and can be bent and used as shown in the figure. In addition to this, it can also be used in a flat, tablet-like form. Sensor 90 4 can sense the shape of the housing 901, for example, when the housing 901 is bent. The display of the display unit 902 and the display unit 903 can be switched. A display device according to one aspect of the present invention can be used for the display unit 903.

[0212] This embodiment can be combined with other embodiments as appropriate. [Explanation of Symbols]

[0213] 10a pixels 10b pixels 10c pixels 10d pixels 21 transistors 22 transistors 23 Transistors 24 transistors 25 Semiconductor layer 25a area 25b area 25c area 26 Capacitive element 27 Capacitive elements 31 Wiring 32 Wiring 33 Conductive layer 34 Conductive layer 34b Conductive layer 35 Conductive layer 36 Conductive layer 37 Conductive layer 38 Conductive layer 41a Conductive layer 41b Conductive layer 42 Conductive layer 42b opening 43 Conductive layer 44 Conductive layer 45 connectors 51 Insulating layer 52 Insulating layer 53 Insulating layer 54 Insulating layer 55 Insulating layer 56 Insulating layer 57 Protective film 61 Orientation film 62 Orientation film 63 Liquid crystal layer 64 Conductive layer 65 Colored layer 66 Light blocking layer 67 Polarizing plate 68 Connection part 71 circuit boards 72 circuit boards 73 Adhesive layer 75 liquid crystal elements 100A display device 127 Electrode 128 electrode 130 Polarizing plate 137 Wiring 138 Wiring 139 Wiring 162 Display section 163 circuit boards 164 Drive Circuit Section 165 Wiring 167 Input device 172 FPC 172b FPC 173 IC 173b IC 350A Touch Panel 506-pixel circuit 901 cabinet 902 Display section 903 Display section 904 Sensor 911 cabinet 912 Display section 919 Camera 931 cabinet 932 Display section 933 Wristband 935 buttons 936 Crown 939 Camera 951 cabinet 952 Display section 953 Operation Buttons 954 External connection port 955 Speaker 956 Mike 957 Camera 961 cabinet 962 Shutter button 963 Mike 965 Display section 966 Operation Keys 967 Speakers 968 Zoom Lever 969 Lens 971 cabinet 973 Display section 974 Operation Keys 975 Speaker 976 Communication connection terminal 977 Light Sensor

Claims

1. A display device having a pixel portion comprising: a first transistor having a top gate structure; a display element having a pixel electrode electrically connected to either the source electrode or the drain electrode of the first transistor; and a capacitive element, The oxide semiconductor film having the channel formation region of the first transistor, A first conductive film having a region that overlaps with the oxide semiconductor film and functioning as the gate electrode of the first transistor, A second conductive film is electrically connected to the first conductive film and functions as a first wiring, A first insulating film having a region positioned above the oxide semiconductor film, A third conductive film is electrically connected to the oxide semiconductor film through a first opening in the first insulating film and functions as the other of the source electrode or drain electrode of the first transistor, A fourth conductive film is electrically connected to the oxide semiconductor film through a second opening in the first insulating film, and functions as either the source electrode or the drain electrode of the first transistor, and also functions as one electrode of the capacitive element. A fifth conductive film is electrically connected to the third conductive film and functions as a second wiring, A sixth conductive film is electrically connected to the fourth conductive film, has a region positioned above the fourth conductive film, and functions as the pixel electrode, A seventh conductive film having a region located below the sixth conductive film and functioning as the other electrode of the capacitive element, The present invention comprises an eighth conductive film having a region positioned above the sixth conductive film and functioning as a common electrode for the display element, The first conductive film comprises at least one of aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten. Each of the second conductive film and the fifth conductive film has light-shielding properties. In a plan view, the fifth conductive film intersects with the second conductive film. Display device.

2. A display device having a pixel portion comprising: a first transistor having a top gate structure; a display element having a pixel electrode electrically connected to either the source electrode or the drain electrode of the first transistor; and a capacitive element, The oxide semiconductor film having the channel formation region of the first transistor, A first conductive film having a region that overlaps with the oxide semiconductor film and functioning as the gate electrode of the first transistor, A second conductive film is electrically connected to the first conductive film and functions as a first wiring, A first insulating film having a region positioned above the oxide semiconductor film, A third conductive film is electrically connected to the oxide semiconductor film through a first opening in the first insulating film and functions as the other of the source electrode or drain electrode of the first transistor, A fourth conductive film is electrically connected to the oxide semiconductor film through a second opening in the first insulating film, and functions as either the source electrode or the drain electrode of the first transistor, and also functions as one electrode of the capacitive element. A fifth conductive film is electrically connected to the third conductive film and functions as a second wiring, A sixth conductive film is electrically connected to the fourth conductive film, has a region positioned above the fourth conductive film, and functions as the pixel electrode, A seventh conductive film having a region located below the sixth conductive film and functioning as the other electrode of the capacitive element, The present invention comprises an eighth conductive film having a region positioned above the sixth conductive film and functioning as a common electrode for the display element, The first conductive film comprises at least one of aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten. Each of the third conductive film and the fourth conductive film comprises a light-transmitting conductive material. Each of the second conductive film and the fifth conductive film has light-shielding properties. In a plan view, the fifth conductive film intersects with the second conductive film. Display device.

3. A display device having a pixel portion comprising: a first transistor having a top gate structure; a display element having a pixel electrode electrically connected to either the source electrode or the drain electrode of the first transistor; and a capacitive element, The oxide semiconductor film having the channel formation region of the first transistor, A first conductive film having a region that overlaps with the oxide semiconductor film and functioning as the gate electrode of the first transistor, A second conductive film is electrically connected to the first conductive film and functions as a first wiring, A first insulating film having a region positioned above the oxide semiconductor film, A third conductive film is electrically connected to the oxide semiconductor film through a first opening in the first insulating film and functions as the other of the source electrode or drain electrode of the first transistor, A fourth conductive film is electrically connected to the oxide semiconductor film through a second opening in the first insulating film, and functions as either the source electrode or the drain electrode of the first transistor, and also functions as one electrode of the capacitive element. A fifth conductive film is electrically connected to the third conductive film and functions as a second wiring, A sixth conductive film is electrically connected to the fourth conductive film, has a region positioned above the fourth conductive film, and functions as the pixel electrode, A seventh conductive film having a region located below the sixth conductive film and functioning as the other electrode of the capacitive element, The present invention comprises an eighth conductive film having a region positioned above the sixth conductive film and functioning as a common electrode for the display element, The first conductive film comprises at least one of aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten. Each of the second conductive film and the fifth conductive film has light-shielding properties. In a plan view, the fifth conductive film intersects with the second conductive film. The fifth conductive film has a region that does not overlap with the third conductive film. Display device.

4. A display device having a pixel portion comprising: a first transistor having a top gate structure; a display element having a pixel electrode electrically connected to either the source electrode or the drain electrode of the first transistor; and a capacitive element, The oxide semiconductor film having the channel formation region of the first transistor, A first conductive film having a region that overlaps with the oxide semiconductor film and functioning as the gate electrode of the first transistor, A second conductive film is electrically connected to the first conductive film and functions as a first wiring, A first insulating film having a region positioned above the oxide semiconductor film, A third conductive film is electrically connected to the oxide semiconductor film through a first opening in the first insulating film and functions as the other of the source electrode or drain electrode of the first transistor, A fourth conductive film is electrically connected to the oxide semiconductor film through a second opening in the first insulating film, and functions as either the source electrode or the drain electrode of the first transistor, and also functions as one electrode of the capacitive element. A fifth conductive film is electrically connected to the third conductive film and functions as a second wiring, A sixth conductive film is electrically connected to the fourth conductive film, has a region positioned above the fourth conductive film, and functions as the pixel electrode, A seventh conductive film having a region located below the sixth conductive film and functioning as the other electrode of the capacitive element, The present invention comprises an eighth conductive film having a region positioned above the sixth conductive film and functioning as a common electrode for the display element, The first conductive film comprises at least one of aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten. Each of the third conductive film and the fourth conductive film comprises a light-transmitting conductive material. Each of the second conductive film and the fifth conductive film has light-shielding properties. In a plan view, the fifth conductive film intersects with the second conductive film. The fifth conductive film has a region that does not overlap with the third conductive film. Display device.

5. A display device having a pixel portion comprising: a first transistor having a top gate structure; a display element having a pixel electrode electrically connected to either the source electrode or the drain electrode of the first transistor; and a capacitive element, The oxide semiconductor film having the channel formation region of the first transistor, A first conductive film having a region that overlaps with the oxide semiconductor film and functioning as the gate electrode of the first transistor, A second conductive film is electrically connected to the first conductive film and functions as a first wiring, A first insulating film having a region positioned above the oxide semiconductor film, A third conductive film is electrically connected to the oxide semiconductor film through a first opening in the first insulating film and functions as the other of the source electrode or drain electrode of the first transistor, A fourth conductive film is electrically connected to the oxide semiconductor film through a second opening in the first insulating film, and functions as either the source electrode or the drain electrode of the first transistor, and also functions as one electrode of the capacitive element. A fifth conductive film is electrically connected to the third conductive film and functions as a second wiring, A sixth conductive film is electrically connected to the fourth conductive film, has a region positioned above the fourth conductive film, and functions as the pixel electrode, A seventh conductive film having a region located below the sixth conductive film and functioning as the other electrode of the capacitive element, The present invention comprises an eighth conductive film having a region positioned above the sixth conductive film and functioning as a common electrode for the display element, The first conductive film comprises at least one of aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten. Each of the second conductive film and the fifth conductive film has light-shielding properties. In a plan view, the fifth conductive film intersects with the second conductive film. The second conductive film does not overlap with the oxide semiconductor film. Display device.

6. A display device having a pixel portion comprising: a first transistor having a top gate structure; a display element having a pixel electrode electrically connected to either the source electrode or the drain electrode of the first transistor; and a capacitive element, The oxide semiconductor film having the channel formation region of the first transistor, A first conductive film having a region that overlaps with the oxide semiconductor film and functioning as the gate electrode of the first transistor, A second conductive film is electrically connected to the first conductive film and functions as a first wiring, A first insulating film having a region positioned above the oxide semiconductor film, A third conductive film is electrically connected to the oxide semiconductor film through a first opening in the first insulating film and functions as the other of the source electrode or drain electrode of the first transistor, A fourth conductive film is electrically connected to the oxide semiconductor film through a second opening in the first insulating film, and functions as either the source electrode or the drain electrode of the first transistor, and also functions as one electrode of the capacitive element. A fifth conductive film is electrically connected to the third conductive film and functions as a second wiring, A sixth conductive film is electrically connected to the fourth conductive film, has a region positioned above the fourth conductive film, and functions as the pixel electrode, A seventh conductive film having a region located below the sixth conductive film and functioning as the other electrode of the capacitive element, The present invention comprises an eighth conductive film having a region positioned above the sixth conductive film and functioning as a common electrode for the display element, The first conductive film comprises at least one of aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten. Each of the third conductive film and the fourth conductive film comprises a light-transmitting conductive material. Each of the second conductive film and the fifth conductive film has light-shielding properties. In a plan view, the fifth conductive film intersects with the second conductive film. The second conductive film does not overlap with the oxide semiconductor film. Display device.

7. A display device having a pixel portion comprising: a first transistor having a top gate structure; a display element having a pixel electrode electrically connected to either the source electrode or the drain electrode of the first transistor; and a capacitive element, The oxide semiconductor film having the channel formation region of the first transistor, A first conductive film having a region that overlaps with the oxide semiconductor film and functioning as the gate electrode of the first transistor, A second conductive film is electrically connected to the first conductive film and functions as a first wiring, A first insulating film having a region positioned above the oxide semiconductor film, A third conductive film is electrically connected to the oxide semiconductor film through a first opening in the first insulating film and functions as the other of the source electrode or drain electrode of the first transistor, A fourth conductive film is electrically connected to the oxide semiconductor film through a second opening in the first insulating film, and functions as either the source electrode or the drain electrode of the first transistor, and also functions as one electrode of the capacitive element. A fifth conductive film is electrically connected to the third conductive film and functions as a second wiring, A sixth conductive film is electrically connected to the fourth conductive film, has a region positioned above the fourth conductive film, and functions as the pixel electrode, A seventh conductive film having a region located below the sixth conductive film and functioning as the other electrode of the capacitive element, The present invention comprises an eighth conductive film having a region positioned above the sixth conductive film and functioning as a common electrode for the display element, The first conductive film comprises at least one of aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten. Each of the second conductive film and the fifth conductive film has light-shielding properties. In a plan view, the fifth conductive film intersects with the second conductive film. The fourth conductive film does not overlap with the fifth conductive film. Display device.

8. A display device having a pixel portion comprising: a first transistor having a top gate structure; a display element having a pixel electrode electrically connected to either the source electrode or the drain electrode of the first transistor; and a capacitive element, The oxide semiconductor film having the channel formation region of the first transistor, A first conductive film having a region that overlaps with the oxide semiconductor film and functioning as the gate electrode of the first transistor, A second conductive film is electrically connected to the first conductive film and functions as a first wiring, A first insulating film having a region positioned above the oxide semiconductor film, A third conductive film is electrically connected to the oxide semiconductor film through a first opening in the first insulating film and functions as the other of the source electrode or drain electrode of the first transistor, A fourth conductive film is electrically connected to the oxide semiconductor film through a second opening in the first insulating film, and functions as either the source electrode or the drain electrode of the first transistor, and also functions as one electrode of the capacitive element. A fifth conductive film is electrically connected to the third conductive film and functions as a second wiring, A sixth conductive film is electrically connected to the fourth conductive film, has a region positioned above the fourth conductive film, and functions as the pixel electrode, A seventh conductive film having a region located below the sixth conductive film and functioning as the other electrode of the capacitive element, The present invention comprises an eighth conductive film having a region positioned above the sixth conductive film and functioning as a common electrode for the display element, The first conductive film comprises at least one of aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten. Each of the third conductive film and the fourth conductive film comprises a light-transmitting conductive material. Each of the second conductive film and the fifth conductive film has light-shielding properties. In a plan view, the fifth conductive film intersects with the second conductive film. The fourth conductive film does not overlap with the fifth conductive film. Display device.

9. A display device having a pixel portion comprising: a first transistor having a top gate structure; a display element having a pixel electrode electrically connected to either the source electrode or the drain electrode of the first transistor; and a capacitive element, The oxide semiconductor film having the channel formation region of the first transistor, A first conductive film having a region that overlaps with the oxide semiconductor film and functioning as the gate electrode of the first transistor, A second conductive film is electrically connected to the first conductive film and functions as a first wiring, A first insulating film having a region positioned above the oxide semiconductor film, A third conductive film is electrically connected to the oxide semiconductor film through a first opening in the first insulating film and functions as the other of the source electrode or drain electrode of the first transistor, A fourth conductive film is electrically connected to the oxide semiconductor film through a second opening in the first insulating film, and functions as either the source electrode or the drain electrode of the first transistor, and also functions as one electrode of the capacitive element. A fifth conductive film is electrically connected to the third conductive film and functions as a second wiring, A sixth conductive film is electrically connected to the fourth conductive film, has a region positioned above the fourth conductive film, and functions as the pixel electrode, A seventh conductive film having a region located below the sixth conductive film and functioning as the other electrode of the capacitive element, The present invention comprises an eighth conductive film having a region positioned above the sixth conductive film and functioning as a common electrode for the display element, The first conductive film comprises at least one of aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten. Each of the second conductive film and the fifth conductive film has light-shielding properties. In a plan view, the fifth conductive film intersects with the second conductive film. The fifth conductive film has a region that does not overlap with the third conductive film. The fourth conductive film does not overlap with the fifth conductive film. The second conductive film does not overlap with the oxide semiconductor film. Display device.

10. A display device having a pixel portion comprising: a first transistor having a top gate structure; a display element having a pixel electrode electrically connected to either the source electrode or the drain electrode of the first transistor; and a capacitive element, The oxide semiconductor film having the channel formation region of the first transistor, A first conductive film having a region that overlaps with the oxide semiconductor film and functioning as the gate electrode of the first transistor, A second conductive film is electrically connected to the first conductive film and functions as a first wiring, A first insulating film having a region positioned above the oxide semiconductor film, A third conductive film is electrically connected to the oxide semiconductor film through a first opening in the first insulating film and functions as the other of the source electrode or drain electrode of the first transistor, A fourth conductive film is electrically connected to the oxide semiconductor film through a second opening in the first insulating film, and functions as either the source electrode or the drain electrode of the first transistor, and also functions as one electrode of the capacitive element. A fifth conductive film is electrically connected to the third conductive film and functions as a second wiring, A sixth conductive film is electrically connected to the fourth conductive film, has a region positioned above the fourth conductive film, and functions as the pixel electrode, A seventh conductive film having a region located below the sixth conductive film and functioning as the other electrode of the capacitive element, The present invention comprises an eighth conductive film having a region positioned above the sixth conductive film and functioning as a common electrode for the display element, The first conductive film comprises at least one of aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten. Each of the third conductive film and the fourth conductive film comprises a light-transmitting conductive material. Each of the second conductive film and the fifth conductive film has light-shielding properties. In a plan view, the fifth conductive film intersects with the second conductive film. The fifth conductive film has a region that does not overlap with the third conductive film. The fourth conductive film does not overlap with the fifth conductive film. The second conductive film does not overlap with the oxide semiconductor film. Display device.

11. In any one of Claims 1 to 10, The seventh conductive film has a third opening in a region that overlaps with the fourth conductive film. The third opening does not overlap with the channel formation region of the first transistor. Display device.

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