Method for manufacturing thin wiring members, and method for manufacturing wiring boards

Abstract

Disclosed is a manufacturing method for a plurality of thin wiring members. This manufacturing method for thin wiring members includes: a step for preparing a first carrier; a step for fabricating, on the first carrier, a wiring layer including a plurality of wiring parts corresponding to the plurality of thin wiring members and an insulating part that surrounds the plurality of wiring parts; a step for forming a support layer harder than the insulating part of the wiring layer; and a step for singulating a wiring body including the wiring layer and the support layer so that each piece includes at least one of the plurality of wiring parts.

Description

Technical Field

[0001] The present disclosure relates to a method for manufacturing a thin wiring member, a thin wiring member, and a method for manufacturing a wiring board.

Background Art

[0002] Patent Document 1 discloses an example of a fan-out type semiconductor device. In this semiconductor device, a redistribution layer is provided between a semiconductor chip and an external connection terminal, and the terminal pitch of the semiconductor chip is widened by the redistribution layer and connected to the external connection terminal.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] In the conventional method, a redistribution layer may be formed on a substrate. However, due to reasons such as large height variations of the substrate, it may be difficult to form fine wirings in the redistribution layer. Therefore, a method of fabricating a redistribution layer composed of fine wirings by patterning on a flat glass carrier and transferring it has been considered. However, the redistribution layer is, for example, as thin as 50 μm, and is a member with adhesiveness and elasticity and an unstable shape, making it difficult to handle during transfer. More specifically, when a large number of redistribution layers are fabricated collectively on a glass carrier, it is necessary to separate them into individual redistribution layers, but it is difficult to perform dicing accurately at that time.

[0005] An object of the present disclosure is to provide a method for manufacturing a thin wiring member, a thin wiring member, and a method for manufacturing a wiring board, which can accurately separate thin and unstable-shaped wiring members into individual pieces.

Means for Solving the Problems

[0006] This disclosure relates, in one aspect, to a method for manufacturing thin wiring members. This manufacturing method is a method for manufacturing a plurality of thin wiring members and comprises the steps of: preparing a first carrier; creating a wiring layer on the first carrier having a plurality of wiring portions corresponding to the plurality of thin wiring members and an insulating portion surrounding the plurality of wiring portions; forming a support layer that is harder than the insulating portion of the wiring layer; and separating a wiring body including the wiring layer and the support layer into individual pieces such that each piece has at least one wiring portion from the plurality of wiring portions.

[0007] In the above-described method for manufacturing thin wiring members, a support layer harder than the insulating portion of the wiring layer is formed, and the wiring body, including the wiring layer and the support layer, is divided into individual pieces such that each piece has at least one of the multiple wiring portions. In this case, the wiring layer, whose shape is uncertain, is supported by the hard support layer while the pieces are divided. Therefore, this manufacturing method makes it possible to accurately divide thin wiring members with unstable shapes into individual pieces. In addition, when the wiring layer is thin, it may curl up due to impact during piece division (e.g., dicing), but with this manufacturing method, since the support layer supports the wiring layer, it is possible to suppress such curling. In the above-described method for manufacturing thin wiring members, in the piece division step, the wiring body may be divided with the support layer attached to one surface of the wiring layer.

[0008] In the manufacturing method of the thin wiring member described above, in the step of separating the components, the wiring body may be separated by dicing it with a blade from the support layer toward the wiring layer. In this case, since dicing is performed from the hard support layer side, the wiring layer, which has an unstable shape and is cut after the support layer, can be precisely diced by the blade, thereby improving dicing performance.

[0009] In the manufacturing method of the thin wiring member described above, in the step of making individual pieces, the wiring body may be diced and made individual pieces while the wiring layer is sandwiched between the first carrier and the support layer. In this case, since the movement of the wiring layer, which has an unstable shape, is fixed by sandwiching it between the first carrier and the rigid support layer, dicing can be performed with even greater precision.

[0010] The above-described method for manufacturing thin wiring members may further include the steps of: attaching individual wiring bodies to an adhesive film; removing the first carrier from the wiring body after it has been attached to the adhesive film; and dividing the adhesive film to which the individual wiring bodies are attached. Examples of division methods include laser cutting, blade cutting, and expansion. In this manufacturing method, the attachment step involves attaching the adhesive film to the support layer of the wiring body, and the division step involves dividing the adhesive film along the cutting region in the support layer. In this case, the division of the adhesive film during the division process can prevent the unstable wiring layer from being pulled, thus preventing deterioration of dimensional accuracy. Therefore, this manufacturing method allows for maintaining high dimensional accuracy in the thin wiring members.

[0011] In the above-described method for manufacturing thin wiring members, the support layer may be formed on the first carrier during the step of forming the support layer, and the wiring layer may be fabricated on top of the support layer during the step of fabricating the wiring layer. In this case, the rigid support layer can more reliably fix the wiring layer, which has an unstable shape, and allow for individual piece formation. Therefore, this manufacturing method allows for accurate individual piece formation.

[0012] In the manufacturing method of the thin wiring member described above, in the step of making individual pieces, the wiring body may be diced with a blade from the wiring layer toward the support layer. In this case, although dicing is performed from the wiring layer, the wiring layer is firmly supported on the opposite side by a rigid support layer, so the wiring layer can be diced while being fixed to a certain extent. Therefore, this manufacturing method makes it possible to accurately dic thin wiring members with unstable shapes. In addition, if the wiring layer is thin, it is expected that the wiring layer may curl up due to the water pressure during dicing, but by providing a support layer beneath the wiring layer, it is possible to suppress such curling.

[0013] The above-described method for manufacturing a thin wiring member may include the steps of: attaching a second carrier to the surface of the wiring layer opposite to the surface to which the support layer is attached; removing the first carrier after attaching the second carrier; and attaching the wiring body to which the second carrier is attached to an adhesive film. In the individualization step, the wiring layer, support layer, and adhesive film may be diced to form individual pieces after being attached to the adhesive film. In this case, since the first carrier to which the support layer is attached can be removed, the support layer can be removed by etching or the like. Furthermore, since the adhesive film is also diced, expansion is unnecessary, and deterioration of the dimensional accuracy of the wiring layer due to the division of the adhesive film when the adhesive film is expanded can be prevented.

[0014] The above method for manufacturing thin wiring members further includes a step of removing the second carrier, and in the step of individualizing the members, after removing the second carrier, the wiring layer, support layer, and adhesive film may be diced to form individual members. In this case, since the second carrier does not need to be diced, the material of the second carrier can be selected more freely. Also, since the second carrier does not need to be diced, the dicing speed can be increased, and the manufacturing efficiency can be improved.

[0015] In the manufacturing method of the thin wiring member described above, the step of forming individual pieces may involve dicing the second carrier, wiring layer, support layer, and adhesive film. In this case, the wiring layer, which has an unstable shape, is sandwiched between the second carrier and the rigid support layer to fix its movement, and dicing is performed in this state, making it possible to dic with high precision.

[0016] In the above-described method for manufacturing thin wiring members, the thickness of the wiring layer may be 200 μm or less. In this case, the thickness of the thin wiring member can be made thinner more reliably. Furthermore, even if the thickness of the wiring layer is 200 μm or less, any of the above-described manufacturing methods makes it possible to accurately separate wiring bodies having wiring layers with uncertain shapes into individual pieces.

[0017] In the above-described method for manufacturing thin wiring members, the thickness of the support layer may be 25% or more and 3000% or less of the thickness of the wiring layer. A support layer thickness of 25% or more allows the unstable wiring layer to be firmly supported, enabling accurate individualization. Furthermore, a support layer thickness of 3000% or less allows the thin wiring member to remain thin without increasing its thickness.

[0018] In the above-described method for manufacturing thin wiring members, the support layer may be made of a material with a flexural modulus of 3 GPa or more (or a flexural strength of 700 MPa or more). In this case, when separating the members into individual pieces, the rigid support layer can reliably support the wiring layer, which is a point of concern regarding shape. Therefore, this manufacturing method makes it possible to separate the members into individual pieces with high precision.

[0019] In the above-described method for manufacturing thin wiring members, the support layer may include a thermosetting resin layer containing an inorganic filler. In this case, the inorganic filler makes it possible to enable the self-sharpening action of the blade. In this case, it is preferable that the inorganic filler content in the thermosetting resin layer is 40% by mass or more and 90% by mass or less. This makes it possible to achieve both support and cutting ability of the wiring layer. Furthermore, the average particle size of the inorganic filler is preferably 0.05 μm or more, and more preferably 0.1 μm or more.

[0020] In the above-described method for manufacturing thin wiring members, the first carrier may be a glass carrier having an arithmetic mean roughness of 50 nm or less. In this case, it becomes possible to precisely miniaturize the wiring layer fabricated on the first carrier.

[0021] In the above-described method for manufacturing a thin wiring member, the wiring layer may include wiring with a line width of 5 μm or less. In this case, a thin wiring member having fine wiring can be obtained.

[0022] Furthermore, this disclosure relates, in another aspect, to a thin wiring member. This thin wiring member comprises a wiring layer having wiring and a resin composition or cured product thereof present around the wiring, and a support layer provided on one surface of the wiring layer. In this thin wiring member, the support layer is formed from a material harder than the resin composition or cured product thereof of the wiring layer.

[0023] This thin wiring component has a support layer formed from a material harder than the resin composition of the wiring layer or its cured product. In this case, when manufacturing a wiring board or semiconductor device using the thin wiring component, it is possible to prevent the thin wiring component from warping or curling, thereby stabilizing its shape.

[0024] In the thin wiring member described above, the thickness of the wiring layer is 200 μm or less, the thickness of the support layer is 50 μm or more and 1200 μm or less, and the wiring layer may have wiring with a line width of 5 μm. In this case, a thin wiring member with fine wiring can be made.

[0025] In the above-mentioned thin wiring member, the support layer may be formed of a material having a flexural modulus of elasticity of 3 GPa or more (or a flexural strength of 700 MPa or more). In this case, it is possible to more reliably prevent the thin wiring member from warping or curling, and to stabilize the shape. <​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​Figures 5(a) to 5(c) sequentially illustrate a method for manufacturing a wiring board using thin wiring components. [Figure 6] Figures 6(a) to 6(c) sequentially show alternative manufacturing methods for the thin wiring member shown in Figure 1. [Figure 7] Figures 7(a) to 7(c) sequentially show another manufacturing method for the thin wiring member shown in Figure 1, and represent the steps that follow the steps in Figure 6. [Figure 8] Figures 8(a) to 8(c) sequentially show another manufacturing method for the thin wiring member shown in Figure 1, and represent the steps that follow the steps in Figure 7. [Figure 9] Figures 9(a) to 9(c) sequentially show yet another manufacturing method for the thin wiring member shown in Figure 1, and represent the steps that follow the steps in Figure 7. [Figure 10] Figures 10(a) to (d) sequentially illustrate another method for manufacturing a wiring board using thin wiring components. [Modes for carrying out the invention]

[0030] This embodiment will be described in detail below with reference to the drawings. In the following description, the same or equivalent parts will be denoted by the same reference numerals, and redundant descriptions will be omitted. Furthermore, unless otherwise specified, positional relationships such as up, down, left, and right will be based on the positional relationships shown in the drawings. In addition, the dimensional ratios in the drawings are not limited to those shown.

[0031] Where terms such as "left," "right," "front," "back," "top," "bottom," "upper," "downward," "first," and "second" are used in this specification and claims, they are for illustrative purposes only and do not necessarily imply that the relative positions are permanent. Furthermore, the term "layer" includes not only structures formed on the entire surface when observed as a plan view, but also structures formed on only a part of it. Furthermore, the term "process" includes not only independent processes, but also processes that cannot be clearly distinguished from other processes, as long as the intended purpose of that process is achieved. Furthermore, numerical ranges indicated using "~" indicate a range that includes the numbers written before and after "~" as the minimum and maximum values, respectively. In addition, in numerical ranges described stepwise in this specification, the upper or lower limit of a numerical range in one step may be replaced with the upper or lower limit of a numerical range in another step.

[0032] [Configuration of thin wiring components] Figure 1 is a cross-sectional view showing an example of a thin wiring member. As shown in Figure 1, the thin wiring member 1 is a member used, for example, to constitute the rewiring layer (RDL) of the wiring portion of a wiring board 200, which will be described later (see Figure 5). However, the thin wiring member 1 may also be used for wiring or connections in semiconductor devices, etc. The thin wiring member 1 comprises a fine wiring layer 10, a support layer 20, and an adhesive layer 30. The thin wiring member 1 is a tiny wiring member that can be embedded in various wiring boards and semiconductor devices, etc., and may have a rectangular shape of 50 mm x 50 mm when viewed from above, or a rectangular shape of 20 mm x 20 mm. Furthermore, the thin wiring member 1 is a thin wiring member, having a fine wiring layer 10 with a thickness of about 50 μm, and the overall thickness is thin, for example, 30 μm to 1 mm. The thickness of the fine wiring layer 10 is, for example, 200 μm or less. Because of its thickness, the thin wiring component 1 has characteristics such as being prone to curling and being difficult to handle.

[0033] The fine wiring layer 10 is formed by providing copper wiring 14 (wiring) having a three-dimensional wiring configuration within the insulating layer 12 (insulating portion). The copper wiring 14 is, for example, wiring with a fine line width of 0.5 to 5 μm. Preferably, the copper wiring 14 has a fine line width of 0.7 to 4 μm, and more preferably, a fine line width of 1 to 3 μm. The connection ends 14a of the copper wiring 14 are exposed to the outside from the first surface 10a of the fine wiring layer 10. The connection ends 14a of the copper wiring 14 are electrically and mechanically connected to the connection terminals. The second surface 10b of the fine wiring layer 10 is bonded and fixed to the first surface 20a of the support layer 20. The copper wiring 14 is formed by sequentially stacking each wiring layer from the second surface 10b toward the first surface 10a, as will be described later, to form a three-dimensional wiring layer.

[0034] The insulating layer 12 is formed by laminating multiple layers, and for example, from the viewpoint of forming fine vias and grooves, each layer may have a thickness of 10 μm or less, or a thickness of 5 μm or less. The insulating layer 12 is formed to fill around the copper wiring 14 and exist around the copper wiring 14. On the other hand, from the viewpoint of electrical reliability, each layer of the insulating layer 12 may have a thickness of 1 μm or more. The insulating layer 12 as a whole may have a thickness of 10 to 200 μm, or 10 to 100 μm. Furthermore, from the viewpoint of suppressing warping, the insulating layer 12 may have a thermal expansion coefficient (after curing) of, for example, 80 ppm / °C or less. From the viewpoint of suppressing peeling or cracking in the reflow process and temperature cycle test, the insulating layer 12 may have a thermal expansion coefficient (after curing) of, for example, 70 ppm / °C or less. On the other hand, from the viewpoint of improving stress relaxation and forming fine vias or grooves, the insulating layer 12 may have a linear expansion coefficient (after curing) of 20 ppm / °C or more. Furthermore, the coefficient of thermal expansion of the insulating layer 12 may be the same as that of the support layer 20, or it may be smaller or larger than that of the support layer 20.

[0035] Such an insulating layer 12 is composed of materials such as polyimide resin, maleimide resin, epoxy resin, phenoxy resin, polybenzoxazole resin, acrylic resin, and acrylate resin. The insulating layer 12 may also contain fillers, and from the viewpoint of forming fine details, the average particle size of the contained fillers may be 500 nm or less. These fillers may be contained in the insulating layer 12 such that the filler content relative to the total amount of insulating material is less than 1% by mass. The insulating layer 12 may not contain fillers. The insulating layer 12 is formed from the above-mentioned materials and is a layer with adhesive and elastic properties, and is formed as a component with an unstable shape.

[0036] The support layer 20 is a layer that supports the fine wiring layer 10, which includes the insulating layer 12, an unstable component, and is made of a material harder than the resin composition of the insulating layer 12 or its cured product. More specifically, the support layer 20 is made of a material with a flexural modulus of 3 GPa or more (or a flexural strength of 700 MPa or more). The thickness of the support layer 20 may be thinner than the fine wiring layer 10, or conversely, thicker than the fine wiring layer 10. For example, the thickness of the support layer 20 may be 25 to 3000% of the thickness of the fine wiring layer 10. The support layer 20 may also be made from a resin molded body filled with fillers, and the filler filling rate may be 50 to 55% by mass, or 80% by mass or more. The filler cut diameter of the filler may be 20 μm or more. Furthermore, the support layer 20 may be a resin sheet having glass cloth, or a resin sheet having a hard layer (a layer containing silicon, carbon, or copper) on its surface. The thermal expansion coefficient of the support layer 20 may be 5 to 50 ppm / °C. Having such a thermal expansion coefficient for the support layer 20 makes it possible to suppress warping and other deformations.

[0037] More specifically, the support layer 20 may be formed from a thermosetting resin layer containing an inorganic filler. The inorganic filler content in the thermosetting resin layer constituting the support layer 20 may be 40 to 90% by mass. The average particle size of the inorganic filler may be, for example, 0.05 μm or more. The average particle size referred to here is, for example, a value calculated by SEM. The thermosetting resin layer is a layer formed from a thermosetting resin composition containing a thermosetting resin and an inorganic filler, and the thermosetting resin contained in the thermosetting resin composition may be one or more selected from the group consisting of maleimide resins having one or more N-substituted maleimide groups and their derivatives. One or more selected from the group consisting of maleimide resins having one or more N-substituted maleimide groups and their derivatives may be a resin that includes a structure derived from a maleimide resin having two or more N-substituted maleimide groups and a structure derived from a silicone compound having a primary amino group.

[0038] The support layer 20 may further include a second thermosetting resin layer containing a rubber component in addition to the thermosetting resin layer described above. The second thermosetting resin layer is formed from a second thermosetting resin composition containing a thermosetting resin and a rubber component, and the thermosetting resin contained in the second thermosetting resin composition may be an epoxy resin. The second thermosetting resin composition may further contain a phenolic resin curing agent. The rubber component may be crosslinked rubber particles. The content of inorganic filler in the second thermosetting resin layer may be 0 to 20% by mass or 0 to 5% by mass.

[0039] The adhesive layer 30 is a layer for attaching the thin wiring member 1 to a predetermined location on a wiring board or the like. The adhesive layer 30 is formed from an epoxy resin or the like, and for example, it is formed by including a mixed resin such as epoxy resin and acrylic rubber, and fillers. The thickness of the adhesive layer 30 is, for example, 5 to 40 μm. The adhesive layer 30 is made from, for example, a die attach film (DAF). This adhesive layer may be integrally formed on a dicing tape having an adhesive layer. This adhesive layer may contain, for example, an ultraviolet-curable resin.

[0040] [Manufacturing method for thin wiring components] Next, the manufacturing method of the thin wiring member 1 will be described with reference to Figures 2 to 4. Figures 2 to 4 are diagrams showing the manufacturing method of the thin wiring member shown in Figure 1 in order. As shown in Figure 2(a), first, a glass carrier 100 (first carrier) is prepared. The glass carrier 100 is, for example, a carrier substrate with a thickness of 0.7 mm and a flatness with an arithmetic mean roughness of 50 nm or less. The glass carrier 100 is, for example, a wafer or a panel, and is not particularly limited, but may be, for example, a circular wafer with a diameter of 200 mm, 300 mm, or 450 mm, or a rectangular panel with sides of 200 to 700 mm or less. A temporary fixing material 101 is attached to such a glass carrier 100. The temporary fixing material 101 is a resin layer for temporarily fixing an object onto the glass carrier 100, and is configured so that the object, which has been fixed by heating or laser, can be peeled off in a later process.

[0041] Next, a fine wiring layer 102 corresponding to the fine wiring layer 10 is formed. The method for forming the fine wiring layer 102 is not particularly limited, but a semi-additive process (SAP) or a trench method can be used. When forming the seed layer, there are no particular restrictions as long as a metal layer can be formed on the surface of the glass carrier 100 (temporary fixing material 101), but an electroless plating method or a sputtering method can be used.

[0042] In one example of a method for forming a fine wiring layer 102, a metal layer (seed layer) is first formed on a temporary fixing material 101. While there are no particular limitations on the method of forming the metal layer by electroless plating, it is preferable to roughen the resin surface of the temporary fixing material 101 by desmearing or plasma, and then form the metal layer on the roughened surface. As a method for forming fine wiring with a good yield, it is preferable to form the metal layer by irradiating with ultraviolet light of 200 nm or less to suppress surface roughening while improving the surface energy of the resin surface. For example, a low-pressure mercury lamp can be used to irradiate with ultraviolet light of 200 nm or less. As a method for suppressing surface roughening, the metal layer can also be formed by sputtering. By suppressing surface roughening, the seed layer can be easily removed. The thickness of the metal layer to be formed may be 200 nm or less from the viewpoint of improving the yield during fine wiring formation.

[0043] Next, a resist pattern is formed on the metal layer formed on the temporary fixing material 101. The grooves in this resist pattern have a space width of, for example, 0.5 to 5 μm. The resist used for the resist pattern may be either a liquid or film-type resist. The resist pattern can be formed by exposure using a stepper exposure machine and development with an alkaline aqueous solution.

[0044] Methods for forming vias or grooves in a resist pattern can include laser ablation, photolithography, and imprinting. However, from the viewpoint of miniaturization and cost, the photolithography process can be used. In this case, a photosensitive resin material can be used as the insulating material. Known methods such as projection exposure, contact exposure, and direct drawing exposure can be used for exposure of the photosensitive resin material, and an alkaline aqueous solution such as sodium carbonate or TMAH can be used as the development method. After forming the vias and grooves, the insulating layer may be further heat-cured. The heating temperature may be 100 to 200°C, and the heating time may be 30 minutes to 3 hours.

[0045] Next, copper wiring portions are formed on the metal layer and within the grooves of the resist pattern by electroplating. From the viewpoint of improving the yield during fine wiring formation, the thickness of the metal layer may be 10 μm or less. When the space width of the resist pattern is 0.5 to 5 μm, the line width of the copper wiring portions within the resist pattern formed by electroplating will also be 0.5 to 5 μm. After the copper wiring portions are formed, the resist pattern is peeled off and the metal layer is removed. The resist pattern is peeled off by a known method. The metal layer is removed using a commercially available etching solution.

[0046] By repeatedly forming such wiring layers, a wiring body 103 is formed, as shown in Figure 2(b), in which a fine wiring layer 102 is provided on a temporary fixing material 101. Figure 2(b) shows an example in which four wiring layers 102a are stacked, but is not limited to this. The insulating portion 102b of the fine wiring layer 102, excluding the wiring, is made of resin materials such as polyimide resin, maleimide resin, epoxy resin, phenoxy resin, polybenzoxazole resin, acrylic resin, and acrylate resin. The insulating portion 102b is formed to fill the area around the wiring layer 102a and exist around the wiring layer 102a. Such insulating portion 102b has adhesive and elastic properties, and its shape tends to be unstable. In addition, the fine wiring layer 102 is provided with multiple fine wiring layers 102c (wiring portions) corresponding to the fine wiring layers 10 of multiple thin wiring members 1. Each fine wiring layer 102c is made up of a part of the wiring layer 102a and a part of the insulating portion 102b. Furthermore, after forming the fine wiring layer 102, chemical mechanical polishing (CMP) may be performed to flatten the surface irregularities.

[0047] Next, as shown in Figure 2(c), a support layer 104 corresponding to the support layer 20 is formed on the fine wiring layer 102. The support layer 104 is a film-like material and is attached to the upper surface 102d of the fine wiring layer 102, for example, by lamination. The support layer 104 is made of a material harder than the resin portion 102b of the fine wiring layer 102 and supports the fine wiring layer 102. As the support layer 104, a resin molded body filled with approximately 50-55% by mass of filler, a resin sheet having glass cloth, or a resin sheet having a hard layer on its surface can be used. From the viewpoint of self-sharpening of the blade, the support layer 104 is preferably a resin molded body with a filler filling rate of 80% or more, and in this case, it is more preferable that the cut diameter of the filler is 20 μm or more. Also, as the support layer 104, a resin sheet having a hard layer containing silicon, carbon, copper, etc. on its surface is also preferred from the viewpoint of self-sharpening of the blade. The support layer 104 is preferably formed from a material with a low coefficient of thermal expansion, for example, preferably 50 ppm / °C or less. Furthermore, the outer surface of the support layer 104 (the side on which dicing is performed) is preferably smooth, for example, preferably having an arithmetic mean roughness Ra of 50 nm or less.

[0048] The support layer 104 is made of a material harder than the resin composition or cured product thereof of the insulating portion 102b of the fine wiring layer 102. More specifically, the support layer 104 is made of a material with a flexural modulus of 3 GPa or more (or a flexural strength of 700 MPa or more). The thickness of the support layer 104 may be thinner than that of the fine wiring layer 102, for example, 20 to 80% of the thickness of the fine wiring layer 102. Alternatively, the thickness of the support layer 104 may be 25 to 3000% of the thickness of the fine wiring layer 102.

[0049] As an example of such a support layer 104, a thermosetting resin layer containing an inorganic filler can be used. The inorganic filler content in this thermosetting resin layer is, for example, 40 to 90% by mass.

[0050] The thermosetting resin layer constituting the support layer 104 is a thermosetting resin layer containing an inorganic filler. This thermosetting resin layer is a layer that forms a cured material layer that melts and hardens upon heating. The inorganic filler content in the thermosetting resin layer is 40 to 90% by mass. When the inorganic filler content in the thermosetting resin layer is above the lower limit, excellent low thermal expansion and heat resistance are obtained. Furthermore, when the inorganic filler content in the thermosetting resin layer is below the upper limit, excellent moldability and conductive adhesion are obtained. From a similar viewpoint, the inorganic filler content in the thermosetting resin layer is not particularly limited, but is preferably 55 to 80% by mass, more preferably 60 to 75% by mass, and even more preferably 65 to 70% by mass. The thickness of the thermosetting resin layer is not particularly limited, but is preferably 4 to 100 μm, more preferably 6 to 60 μm, and even more preferably 8 to 40 μm. Furthermore, the thickness of the thermosetting resin layer may be 50 μm to 1200 μm.

[0051] Examples of thermosetting resins contained in the thermosetting resin layer include epoxy resins, phenolic resins, maleimide resins, cyanate resins, isocyanate resins, benzoxazine resins, oxetane resins, amino resins, unsaturated polyester resins, allyl resins, dicyclopentadiene resins, silicone resins, triazine resins, and melamine resins. Among these, maleimide resins, epoxy resins, and cyanate resins are preferred from the viewpoint of heat resistance, maleimide resins and epoxy resins are more preferred, and maleimide resins are even more preferred. Such thermosetting resins may be used individually or in combination of two or more.

[0052] As the maleimide resin, one or more selected from the group consisting of maleimide resins having one or more N-substituted maleimide groups and their derivatives is preferred. That is, the thermosetting resin layer is a layer formed from a thermosetting resin composition containing a thermosetting resin and an inorganic filler, and it is preferable that the thermosetting resin contained in the thermosetting resin composition is one or more selected from the group consisting of maleimide resins having one or more N-substituted maleimide groups and their derivatives. As one or more selected from the group consisting of maleimide resins having one or more N-substituted maleimide groups and their derivatives, resins containing a maleimide resin having two or more N-substituted maleimide groups, a structure derived from a maleimide resin having two or more N-substituted maleimide groups and a structure derived from a silicone compound having a primary amino group are preferred, and from the viewpoint of heat resistance and low thermal expansion, silicone-modified maleimide resin is more preferred. In this embodiment, the silicone-modified maleimide resin is one embodiment of the maleimide resin.

[0053] Examples of inorganic fillers contained in the thermosetting resin layer constituting the support layer 104 include silica, alumina, titanium oxide, mica, beryllium, barium titanate, potassium titanate, strontium titanate, calcium titanate, aluminum carbonate, magnesium hydroxide, aluminum silicate, calcium carbonate, calcium silicate, magnesium silicate, silicon nitride, boron nitride, clay, talc, aluminum borate, and silicon carbide. Among these, silica, alumina, mica, and talc are preferred from the viewpoint of low thermal expansion, heat resistance, and flame retardancy, silica and alumina are more preferred, and silica is even more preferred.

[0054] Examples of silica include precipitated silica, which is produced by a wet process and has a high water content, and dry-process silica, which is produced by a dry process and contains almost no bound water. Dry-process silica can be further categorized into crushed silica, fumed silica, fused silica, etc., depending on the manufacturing method.

[0055] The average particle size of the inorganic filler is not particularly limited, but from the viewpoint of dispersibility and fine wiring properties of the inorganic filler, it is preferably 0.01 to 20 μm, more preferably 0.05 to 20 μm, more preferably 0.1 to 10 μm, even more preferably 0.2 to 1 μm, and most preferably 0.3 to 0.8 μm. In this specification, the average particle size refers to the particle size at the point corresponding to 50% of the volume when the cumulative frequency distribution curve by particle size is calculated with the total volume of particles set to 100%. The average particle size of the inorganic filler can be measured, for example, by a particle size distribution analyzer using laser diffraction scattering. Examples of the shape of the inorganic filler include spherical and crushed shapes, with spherical being preferred.

[0056] A coupling agent may be used in the thermosetting resin composition to improve the dispersibility of the inorganic filler and its adhesion to the organic component. Examples of coupling agents include silane coupling agents and titanate coupling agents. Among these, silane coupling agents are preferred. Examples of silane coupling agents include aminosilane coupling agents, vinylsilane coupling agents, and epoxysilane coupling agents.

[0057] When a coupling agent is used in a thermosetting resin composition, the surface treatment method for the inorganic filler may be an integral blend treatment method in which the coupling agent is added after the inorganic filler has been blended into the resin composition, but it is preferable to pre-treat the inorganic filler surface with the coupling agent by dry or wet method. To improve dispersibility, the inorganic filler may be pre-dispersed in an organic solvent to form a slurry before being mixed with other components.

[0058] Furthermore, the support layer 104 may further comprise a second thermosetting resin layer containing a rubber component, as an optional layer. The content of the inorganic filler in the second thermosetting resin layer is, for example, 0 to 20% by mass. By providing the second thermosetting resin layer, the occurrence of cracks in the resin layer is suppressed. In this specification, "rubber component" means a crosslinked elastomer or a crosslinkable elastomer. The rubber component contained in the second thermosetting resin layer may exist in a form reacted with other components. The content of the inorganic filler in the second thermosetting resin layer is 0 to 20% by mass. If the content of the inorganic filler in the second thermosetting resin layer is below the above upper limit, cracks in the resin layer can be sufficiently suppressed.

[0059] From the same viewpoint as described above, the content of the inorganic filler in the second thermosetting resin layer is not particularly limited, but is preferably 0 to 10% by mass, more preferably 0 to 5% by mass, and even more preferably 0 to 1% by mass. The same inorganic filler used in the thermosetting resin layer described above can be used as the inorganic filler in the second thermosetting resin layer.

[0060] The second thermosetting resin layer is formed from a second thermosetting resin composition containing a thermosetting resin and a rubber component. Examples of thermosetting resins used in the second thermosetting resin layer include epoxy resins, phenolic resins, maleimide resins, cyanate resins, isocyanate resins, benzoxazine resins, oxetane resins, amino resins, unsaturated polyester resins, allyl resins, dicyclopentadiene resins, silicone resins, triazine resins, and melamine resins. Among these, maleimide resins, epoxy resins, and cyanate resins are preferred from the viewpoint of heat resistance, maleimide resins and epoxy resins are more preferred, and epoxy resins are even more preferred. Thermosetting resin (a) may be used alone or in combination of two or more types.

[0061] Examples of rubber components used in the second thermosetting resin layer include crosslinked rubber particles and liquid rubber. Among these, crosslinked rubber particles are preferred from the viewpoint of suppressing cracks in the resin layer. Examples of crosslinked rubber particles include butadiene rubber particles, isoprene rubber particles, chloroprene rubber particles, styrene rubber particles, acrylic rubber particles, silicone rubber particles, natural rubber particles, styrene-butadiene rubber particles, acrylonitrile butadiene rubber particles, carboxylic acid-modified acrylonitrile butadiene rubber particles, and core-shell type rubber particles. Among these, acrylonitrile butadiene rubber particles and carboxylic acid-modified acrylonitrile butadiene rubber particles are preferred, and carboxylic acid-modified acrylonitrile butadiene rubber particles are more preferred. Rubber component (b) may be used alone or in combination of two or more types.

[0062] Next, as shown in Figure 3(a), the wiring body 105, which includes the fine wiring layers 102 and the support layer 104, is divided into individual pieces such that each piece has at least one of the multiple fine wiring layers 102c. In this piece-forming step, the fine wiring layers 102 are cut from the support layer 104 side with the blade D using a dicer to form individual pieces. The divided support layer 104 becomes multiple support layers 104a. In addition, a cut region 104b is formed between each support layer 104a. Note that during this dicing, the temporary fixing material 101 does not need to be cut, or a part of it may be cut.

[0063] Next, as shown in Figure 3(b), the diced wiring body 105A is attached to the dicing tape 107 via the adhesive film 106. Then, as shown in Figure 3(c), the temporary fixing material 101 is irradiated with a laser L to separate the glass carrier 100 and the temporary fixing material 101 from the wiring body 105A.

[0064] Next, as shown in Figure 4(a), the dicing tape 107 is expanded radially outward to separate the adhesive film 106 into individual pieces, similar to the wiring body 105, and divide it into individual adhesive films 106a. During this expansion, the adhesive film 106 may be cooled while expanding to separate the pieces. When the adhesive film 106 is separated into pieces by expansion, the tearing force is transmitted to the surrounding film, etc., but in this manufacturing method, a hard support layer 104a is provided on top of it. Therefore, the force is not transmitted to the fine wiring layer 102c, and the dimensional accuracy of the separated fine wiring layer 102c is not affected. In this way, the adhesive film 106 is separated along the cutting region 104b of the support layer 104a, and a layer corresponding to the adhesive layer 30 described above is formed. After that, as shown in Figure 4(b), each of the separated thin wiring members 1 is picked up to obtain the thin wiring member 1 shown in Figure 4(c).

[0065] [Manufacturing method for wiring boards] Next, with reference to Figure 5, a method for manufacturing a wiring board using the thin wiring member 1 described above will be explained. Figure 5 is a diagram showing the process of manufacturing a wiring board using a thin wiring member. In this wiring board manufacturing method, first, the thin wiring member 1 and the substrate body 201 are prepared. As shown in Figure 5(a), the substrate body 201 is a component formed in a substrate shape by alternately stacking insulating layers 202 and wiring layers 203. The substrate body 201 is also provided with an opening 204 for arranging the thin wiring member 1. Once the preparation of the thin wiring member 1 and other components is complete, the thin wiring member 1 is placed in the opening 204 of the substrate body 201. At this time, the adhesive layer 30 of the thin wiring member 1 is attached to the bottom surface of the opening 204.

[0066] Next, as shown in Figure 5(b), an insulating resin portion 205 is formed on the remaining portion of the opening 204 in which the thin wiring member 1 is installed and on the surface 201a of the substrate body 201. The insulating resin portion 205 may be formed using an insulating resin film, or it may be formed by applying or filling a liquid resin composition. Then, the insulating resin portion 205 is patterned to form wiring 206. After that, as shown in Figure 5(c), a connection terminal 208 is provided, and the copper wiring 14 of the thin wiring member 1 and the connection terminal 208 are electrically connected. The wiring board 200 can then be obtained.

[0067] As described above, in the manufacturing method of the thin wiring member according to this embodiment, a support layer 104 is formed that is harder than the insulating portion 102b of the fine wiring layer 102, and the wiring body 105, which includes the fine wiring layer 102 and the support layer 104, is divided into individual pieces such that each piece has at least one fine wiring layer 102c. This allows the fine wiring layer 102, whose shape is uncertain, to be supported by the hard support layer 104 while being divided into individual pieces. Therefore, this manufacturing method makes it possible to accurately divide the thin wiring member 1, which is thin and has an unstable shape. Furthermore, when the fine wiring layer 102 is thin, it may peel up due to impact (e.g., water pressure) during the division into individual pieces (e.g., dicing), but with this manufacturing method, since the support layer 104 supports the fine wiring layer 102, it is possible to suppress such peeling up. Furthermore, in this manufacturing method, the wiring body 105 is separated into individual pieces while the support layer 104, which is harder than the other parts, is attached to one surface of the fine wiring layer 102, thereby enabling more reliable separation into individual pieces.

[0068] Furthermore, in the manufacturing method of the thin wiring member according to this embodiment, when individualizing the wiring member, the wiring body 105 is diced with a blade D from the support layer 104 toward the fine wiring layer 102 to form individual pieces. As a result, since dicing is performed from the hard support layer 104 side, the fine wiring layer 102, which has an unstable shape and is cut after the support layer 104, can be diced with high precision, thereby improving dicing performance.

[0069] Furthermore, in the manufacturing method of the thin wiring member according to this embodiment, when individualizing the wiring member, the wiring body 105 is diced with a blade D while the fine wiring layer 102 is sandwiched between the glass carrier 100 and the support layer 104. In this case, since the movement of the irregularly shaped fine wiring layer 102 is fixed by sandwiching it between the glass carrier 100 and the rigid support layer 104, dicing can be performed with even greater precision.

[0070] Furthermore, the manufacturing method for the thin wiring member according to this embodiment may further include the steps of: attaching the individualized wiring bodies 105 to an adhesive film 106; removing the glass carrier 100 from the wiring bodies 105 after it has been attached to the adhesive film 106; and expanding the adhesive film 106 to which the individualized wiring bodies 105 have been attached. In this manufacturing method, in the attaching step, the adhesive film 106 is attached to the support layer 104 of the wiring bodies 105, and in the expanding step, the adhesive film 106 is divided along the cutting region 104b in the support layer 104. In this case, the division of the adhesive film 106 during expansion makes it possible to suppress the deterioration of dimensional accuracy caused by the pulling of the shapeless fine wiring layer 102. Therefore, according to this manufacturing method, the dimensional accuracy of the thin wiring member can be kept high.

[0071] Furthermore, in the manufacturing method of the thin wiring member according to this embodiment, the thickness of the fine wiring layer 102 may be 200 μm or less. In this case, the thickness of the thin wiring member 1 can be made thinner more reliably. Also, even if the thickness of the fine wiring layer 10 is 200 μm or less, any of the above-described manufacturing methods makes it possible to accurately separate wiring bodies having wiring layers with uncertain shapes into individual pieces.

[0072] Furthermore, in the manufacturing method of the thin wiring member according to this embodiment, the thickness of the support layer 104 may be 25 to 3000% or less of the thickness of the fine wiring layer 102. By having a support layer 104 thickness of 25% or more of the thickness of the fine wiring layer 102, it is possible to firmly support the wiring layer with an unstable shape with the support layer 104 and to make individual pieces with high precision. Also, by having a support layer 104 thickness of 3000% or less of the thickness of the fine wiring layer 102, the thickness of the thin wiring member can be kept thin without increasing its thickness.

[0073] Furthermore, in the manufacturing method of the thin wiring member according to this embodiment, the support layer 104 may be formed from a material having a flexural modulus of 3 GPa or more (or a flexural strength of 700 MPa or more). In this case, when individualizing the members, the rigid support layer 104 can reliably support the fine wiring layer 102, which is a point of concern regarding shape. Therefore, this manufacturing method makes it possible to individualize the members with high precision.

[0074] Furthermore, in the manufacturing method of the thin wiring member according to this embodiment, the support layer 104 may include a thermosetting resin layer containing an inorganic filler. In this case, the inorganic filler makes it possible to exhibit the self-sharpening action of the blade. In this case, it is preferable that the inorganic filler content in the thermosetting resin layer is 40 to 90% by mass or less. In addition, the average particle size of the inorganic filler is preferably 0.05 μm or more, and more preferably 0.1 μm or more.

[0075] Furthermore, in the manufacturing method of the thin wiring member according to this embodiment, the glass carrier 100 may have an arithmetic mean roughness Ra of 50 nm or less. In this case, it becomes possible to precisely miniaturize the wiring layer fabricated on the glass carrier 100.

[0076] Furthermore, in the manufacturing method of the thin wiring member according to this embodiment, the fine wiring layer 102 may include wiring with a line width of 5 μm or less. In this case, a thin wiring member having fine wiring can be obtained.

[0077] [Another method for manufacturing thin wiring components] Next, an alternative manufacturing method for the thin wiring member 1 will be described with reference to Figures 6 to 8. Figures 6 to 8 sequentially show the alternative manufacturing method for the thin wiring member shown in Figure 1. In the following, we will mainly explain the differences from the manufacturing method for the thin wiring member described above, and will omit explanations of the same parts or the same components.

[0078] As shown in Figure 6(a), first, a glass carrier 100 is prepared. Then, a temporary fixing material 101 is attached to the glass carrier 100. In this alternative manufacturing method, a support layer 104 is further formed on top of the temporary fixing material 101. The support layer 104 is a layer made of a hard material as described above.

[0079] Next, as shown in Figure 6(b), a fine wiring layer 102 is fabricated on the support layer 104. The same process as described above can be used to fabricate the fine wiring layer 102, for example, by using a semi-additive process (SAP) or a trenching method.

[0080] Next, as shown in Figure 6(c), another carrier 110 (second carrier) is attached to the fine wiring layer 102. The carrier 110 may be provided with an adhesive layer 111. The carrier 110 may be made of glass, similar to the glass carrier 100, or it may be made of another material.

[0081] Next, once the carrier 110 is attached to the fine wiring layer 102, the glass carrier 100 used to fabricate the fine wiring layer 102 is peeled off, as shown in Figure 7(a). This peeling is performed by removing the temporary fixing material 101 by laser irradiation, similar to the manufacturing method described above.

[0082] Next, after peeling off the glass carrier 100, the surface of the support layer 104 is wet-etched, as shown in Figure 7(b). This removes any components of the temporary fixing material that have adhered to the support layer. Then, as shown in Figure 7(c), the fine wiring layer 102 is attached to the dicing tape 107 via the adhesive film 106.

[0083] Next, once the attachment of the fine wiring layer 102 to the dicing tape is complete, the carrier 110 is peeled off by a laser or the like, as shown in Figure 8(a). Then, as shown in Figure 8(b), the fine wiring layer 102 and the support layer 104 are separated into individual pieces by dicing using the blade D of the dicer, from the fine wiring layer 102 toward the support layer 104. During this dicing, the adhesive film 106 is also separated into individual pieces. Through this dicing, a thin wiring member 1 is formed, each comprising a fine wiring layer 102c, a support layer 104a, and an adhesive film 106a, as shown in Figures 8(b) and (c).

[0084] As described above, in another manufacturing method for the thin wiring member according to this embodiment, a support layer 104 that is harder than the insulating portion 102b of the fine wiring layer 102 is formed, similar to the manufacturing method described above, and the wiring body including the fine wiring layer 102 and the support layer 104 is divided into individual pieces such that each piece has at least one fine wiring layer 102c. This allows the fine wiring layer 102, whose shape is a concern, to be supported by the hard support layer 104 while being divided into individual pieces. Therefore, this manufacturing method makes it possible to accurately divide the thin wiring member 1, which is thin and has an unstable shape. Furthermore, when the fine wiring layer 102 is thin, it may curl up due to impact (e.g., water pressure) during the division into individual pieces (e.g., dicing), but with this manufacturing method, since the support layer 104 supports the fine wiring layer 102, it is possible to suppress such curling. In particular, since the support layer 104 supports the lower part of the fine wiring layer 102, it is possible to suitably suppress such curling. Furthermore, in this manufacturing method, by separating the wiring into individual pieces while the rigid support layer 104 is attached to one surface of the fine wiring layer 102, it is possible to more reliably suppress such peeling up.

[0085] Furthermore, in another manufacturing method for the thin wiring member according to this embodiment, when dicing, the wiring body is diced with a blade D from the fine wiring layer 102 toward the support layer 104. In this case, although dicing is performed from the fine wiring layer 102, the fine wiring layer 102 is firmly supported by the rigid support layer 104 on the opposite side, so the fine wiring layer 102 can be diced while being fixed to a certain extent. Therefore, this alternative manufacturing method makes it possible to accurately dic thin wiring members with unstable shapes.

[0086] Furthermore, the manufacturing method of the thin wiring member according to this embodiment includes the steps of: attaching the carrier 110 to the surface of the fine wiring layer 102 that is opposite to the surface to which the support layer 104 is attached; removing the glass carrier 100 after attaching the carrier 110; and attaching the wiring body to which the carrier 110 is attached to the adhesive film 106. In the individualization step, the fine wiring layer 102, the support layer 104, and the adhesive film 106 may be diced to individualize them after being attached to the adhesive film 106. In this case, since the glass carrier 100 to which the support layer 104 is attached can be removed, it is possible to remove the components of the temporary fixing material attached to the support layer by etching or the like. Also, since the adhesive film 106 is also diced, it is possible to prevent deterioration of the dimensional accuracy of the fine wiring layer 102 due to the division of the adhesive film 106 when the adhesive film 106 is expanded.

[0087] Furthermore, the manufacturing method for the thin wiring member according to this embodiment further includes a step of removing the carrier 110, and in the step of individualizing the members, after removing the carrier 110, the fine wiring layer 102, the support layer 104, and the adhesive film 106 are diced to form individual members. In this way, since it is not necessary to dic the carrier 110, it is possible to select the material of the carrier 110 more freely. Also, since it is not necessary to dic the carrier 110, the dicing speed can be increased, and the manufacturing efficiency can be improved. It is clear that other manufacturing methods according to this embodiment can achieve the same effects as the manufacturing method described above, so a further explanation is omitted.

[0088] [Another manufacturing method for thin wiring components] Next, with reference to Figure 9, yet another method for manufacturing the thin wiring member 1 will be described. Figure 9 is a diagram showing, in sequence, yet another method for manufacturing the thin wiring member shown in Figure 1. In the following, we will mainly explain the differences between this method and the previously described method for manufacturing the thin wiring member and the other method, and will omit explanations of the same parts or the same components.

[0089] In this yet another manufacturing method, the steps shown in Figures 6(a) to 7(c) of the other manufacturing method described above are first performed in the same manner. Figure 9(a) corresponds to Figure 7(c). In this yet another manufacturing method, as shown in Figure 9(a), when the adhesive film 106 is attached to the fine wiring layer 102 to which the carrier 110 is attached, the wiring is divided into individual pieces by dicing using a dicer without peeling off the carrier 110, as shown in Figure 9(b). As a result, a thin wiring member 1A is formed, comprising a fine wiring layer 102c(10), a support layer 104a(20), an adhesive film 106a(30), and a carrier 110a, as shown in Figures 9(b) and (c).

[0090] In the further manufacturing method of the thin wiring member according to this embodiment, the carrier 110, the fine wiring layer 102, the support layer 104, and the adhesive film 106 are diced to form individual pieces. In this case, the fine wiring layer 102, which has an unstable shape, is sandwiched between the rigid carrier 110 and the rigid support layer 104 to fix its movement, and dicing is performed in this state, making it possible to dic with high precision. It is clear that the further manufacturing method according to this embodiment can achieve the same effects as the manufacturing method described above and the other manufacturing methods, and therefore the explanation is omitted.

[0091] [Another method for manufacturing a wiring board] Next, with reference to Figure 10, another method for manufacturing a wiring board using the thin wiring member 1 described above will be explained. Figure 10 is a diagram illustrating, in sequence, another method for manufacturing a wiring board using a thin wiring member. In this method of manufacturing a wiring board, first, the thin wiring member 1 is prepared, along with the substrate body 301. As shown in Figure 10(a), the substrate body 301 is a component in which insulating layers 302 and wiring layers 303 are alternately laminated. The substrate body 301 is also provided with an installation layer 304 for arranging the thin wiring member 1.

[0092] Next, once the preparation of the thin wiring member 1 and other components is complete, the thin wiring member 1 is placed on the mounting layer 304 of the substrate body 301, as shown in Figure 10(b). At this time, the adhesive layer 30 of the thin wiring member 1 is attached to the mounting layer 304.

[0093] Next, as shown in Figure 10(c), an insulating resin portion 305 is formed on the installation layer 304 of the substrate body 301 on which the thin wiring member 1 is installed. Then, the insulating resin portion 305 is patterned to form wiring 306. After that, connection terminals may be provided. By doing so, a wiring board 300 can be obtained.

[0094] The above describes a method for manufacturing a thin wiring member, a thin wiring member, and a method for manufacturing a wiring substrate according to one embodiment of the present disclosure. However, the present disclosure is not limited to the above-described embodiment, and modifications can be made as appropriate without departing from the spirit of the disclosure. For example, in the above-described embodiment, the case in which the fine wiring layer 102 is fragmented is described by dicing using a dicer (blade D), but the fine wiring layer 102 may also be fragmented by a laser or the like. Furthermore, the method for dividing the adhesive film 106 to which the fragmented wiring bodies are attached is not limited to the expanding method described above, but a method of burning off a predetermined part of the adhesive film 106 with a laser, or a method of dividing with a blade may also be used. [Explanation of symbols]

[0095] 1,1A...Thin wiring component, 10...Fine wiring layer, 20...Support layer, 30...Adhesive layer, 100...Glass carrier (first carrier), 102...Fine wiring layer, 102b...Insulating part (insulating section), 102c...Fine wiring layer (wiring section), 104...Support layer, 105,105A...Wiring body, 106...Adhesive film, 110...Carrier (second carrier), 201,301...Substrate body (substrate), 206,208,306...Connection terminals, 200,300...Wiring board.

Claims

1. A method for manufacturing multiple thin wiring components, The process of preparing for the first career, A step of creating a wiring layer on a first carrier having a plurality of wiring portions corresponding to the plurality of thin wiring members and an insulating portion surrounding the plurality of wiring portions, A step of forming a support layer that is harder than the insulating portion of the wiring layer, The process includes a step of separating the wiring body, which includes the wiring layer and the support layer, into individual pieces such that each piece has at least one wiring portion among the plurality of wiring portions, A method for manufacturing a thin wiring member, wherein, in the step of forming individual pieces, the wiring layer is sandwiched between the first carrier and the support layer, and the wiring body is diced with a blade from the support layer toward the wiring layer to form individual pieces.

2. A method for manufacturing multiple thin wiring components, The process of preparing for the first career, A step of creating a wiring layer on a first carrier having a plurality of wiring portions corresponding to the plurality of thin wiring members and an insulating portion surrounding the plurality of wiring portions, A step of forming a support layer that is harder than the insulating portion of the wiring layer, A step of dividing a wiring body, which includes the wiring layer and the support layer, into individual pieces, such that each piece has at least one wiring portion among the plurality of wiring portions, The process involves attaching each of the individualized wiring units to an adhesive film, The steps include removing the first carrier from the wiring body after it has been attached to the adhesive film, The process includes dividing the adhesive film to which each of the individualized wiring bodies is attached, In the above-mentioned individualization step, the wiring body is diced with a blade from the support layer toward the wiring layer to form individual pieces. In the above bonding step, the adhesive film is attached to the support layer of the wiring body. A method for manufacturing a thin wiring member, wherein in the division step, the adhesive film is divided along the cutting region in the support layer.

3. A method for manufacturing multiple thin wiring components, The process of preparing for the first career, The steps include forming a support layer on the first carrier, A step of creating a wiring layer on the support layer having a plurality of wiring portions corresponding to the plurality of thin wiring members and an insulating portion surrounding the plurality of wiring portions, The process includes a step of separating the wiring body, which includes the wiring layer and the support layer, into individual pieces such that each piece has at least one wiring portion among the plurality of wiring portions, A method for manufacturing a thin wiring member, wherein the support layer is harder than the insulating portion of the wiring layer.

4. In the step of separating the components, the wiring body is diced with a blade from the wiring layer toward the support layer to separate the components. A method for manufacturing a thin wiring member according to claim 3.

5. A step of attaching the second carrier to the surface of the wiring layer that is opposite to the surface to which the support layer is attached, The process of removing the first carrier after attaching the second carrier, The process includes attaching the wiring body to which the second carrier is attached to an adhesive film, In the step of separating into individual pieces, after being attached to the adhesive film, the wiring layer, the support layer, and the adhesive film are diced to separate into individual pieces. A method for manufacturing a thin wiring member according to claim 4.

6. The process further includes removing the second carrier, In the process of separating into individual pieces, after removing the second carrier, the wiring layer, the support layer, and the adhesive film are diced to separate into individual pieces. A method for manufacturing a thin wiring member according to claim 5.

7. In the step of forming individual pieces, the second carrier, the wiring layer, the support layer, and the adhesive film are diced to form individual pieces. A method for manufacturing a thin wiring member according to claim 5.

8. The thickness of the aforementioned wiring layer is 200 μm or less. A method for manufacturing a thin wiring member according to any one of claims 1 to 7.

9. The thickness of the support layer is 25% or more and 3000% or less of the thickness of the wiring layer. A method for manufacturing a thin wiring member according to any one of claims 1 to 7.

10. The support layer is formed from a material with a flexural modulus of 3 GPa or higher. A method for manufacturing a thin wiring member according to any one of claims 1 to 7.

11. The support layer includes a thermosetting resin layer containing an inorganic filler. A method for manufacturing a thin wiring member according to any one of claims 1 to 7.

12. The content of the inorganic filler in the thermosetting resin layer is 40% by mass or more and 90% by mass or less. A method for manufacturing a thin wiring member according to claim 11.

13. The average particle size of the inorganic filler is 0.05 μm or more. A method for manufacturing a thin wiring member according to claim 11.

14. The first carrier is a glass carrier with an arithmetic mean roughness Ra of 50 nm or less. A method for manufacturing a thin wiring member according to any one of claims 1 to 7.

15. The aforementioned wiring layer includes wiring with a line width of 5 μm or less. A method for manufacturing a thin wiring member according to any one of claims 1 to 7.

16. A step of preparing a thin wiring member manufactured by the method for manufacturing a thin wiring member described in any one of claims 1 to 7, The steps include: placing the thin wiring member on or within the substrate; The process of connecting the wiring of the thin wiring member to the connection terminal, A method for manufacturing a wiring board, comprising:

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