Method for manufacturing masks and organic devices

Abstract

To provide a mask which can make uniform the thickness of a vapor deposition material attaching to a substrate.SOLUTION: A mask 20 includes a first layer including at least one first opening, and a metal layer 40 including a plurality of second openings 41 overlapped with the first opening in a plane view. The metal layer 40 includes an effective region formed with a plurality of second openings 41, and a peripheral region surrounding the effective region. The peripheral region has a section 48A surrounded by a recess or a lost part 43.SELECTED DRAWING: Figure 4

Description

[Technical Field]

[0001] Embodiments of this disclosure relate to methods for manufacturing masks and organic devices. [Background technology]

[0002] Vapor deposition is a known method for forming precise patterns. In vapor deposition, a mask with openings is first combined with a substrate. Subsequently, a vapor deposition material is deposited onto the substrate through the openings in the mask. This allows a vapor deposition layer containing the vapor deposition material to be formed on the substrate in a pattern corresponding to the pattern of the openings in the mask. Vapor deposition is used, for example, as a method for forming pixels in organic EL display devices. Patent Document 1 discloses a mask used in vapor deposition.

[0003] The mask described in Patent Document 1 includes a mask chip and a support that supports the mask chip. The mask chip has a plurality of openings, each corresponding to a pixel. The mask support also has openings. Each opening in the mask support corresponds, for example, to one screen of an organic EL display device. In a plan view, each opening in the mask support overlaps with the plurality of openings in the mask chip. During the deposition process, the mask chip faces the substrate, and the mask support faces the deposition source. The deposition material flying from the deposition source passes through the openings in the mask support and then through the openings in the mask chip before adhering to the substrate. [Prior art documents] [Patent Documents]

[0004] [Patent Document 1] Japanese Patent Publication No. 2005-042133 [Overview of the project] [Problems that the invention aims to solve]

[0005] Incidentally, it is desirable to make the thickness of the vapor-deposited material attached to the substrate uniform. For example, it is desirable to reduce the difference in thickness between multiple vapor-deposited layers formed within a region corresponding to one screen of an organic EL display device on a substrate. By making the thickness of multiple vapor-deposited layers uniform, the display quality within the screen can be made uniform. For example, the screen can be made to emit light uniformly. However, according to the findings obtained by the inventors of this invention, the thickness of the vapor-deposited layer near the outer edge of the region tends to be greater than the thickness of the vapor-deposited layer in the center of the region.

[0006] The embodiments of this disclosure aim to manufacture a mask that can effectively solve these problems. [Means for solving the problem]

[0007] A mask according to one embodiment of the present disclosure may include a first layer having a first surface, a second surface located opposite to the first surface, and at least one first opening penetrating from the first surface to the second surface; a metal layer having a third surface facing the second surface, a fourth surface located opposite to the third surface, and a plurality of second openings penetrating from the third surface to the fourth surface and overlapping the first opening in a plan view, wherein the first layer may contain silicon or a silicon compound; and the metal layer may include an effective region in which the plurality of second openings are formed, and a peripheral region surrounding the effective region, wherein the peripheral region may have a section surrounded by a recess in which the fourth surface is recessed toward the third surface or a defect penetrating the metal layer in a plan view. [Effects of the Invention]

[0008] According to the embodiments of this disclosure, the difference in thickness of the deposition material adhering to the substrate can be reduced. [Brief explanation of the drawing]

[0009] [Figure 1] This is a cross-sectional view showing an example of an organic device. [Figure 2] This figure shows an example of a vapor deposition apparatus equipped with a mask. [Figure 3] It is a plan view showing an example of a mask when viewed from the incident surface side. [Figure 4] It is a plan view showing an example of a mask when viewed from the emission surface side. [Figure 5A] It is a view showing an enlarged portion surrounded by the two-dot chain line in FIG. 3. [Figure 5B] It is a view of the portion shown in FIG. 5A when viewed from the emission surface side. [Figure 6A] It is a view showing a cross section along the VIA-VIA line of the mask shown in FIG. 3. [Figure 6B] It is a view showing a cross section along the VIB-VIB line of the mask shown in FIG. 3. [Figure 7A] It is a view showing an enlarged portion surrounded by the two-dot chain line in FIG. 6A. [Figure 7B] It is a view showing an enlarged portion surrounded by the two-dot chain line in FIG. 6B. [Figure 8] It is a cross-sectional view showing one step of the manufacturing method of the mask shown in FIGS. 6A and 6B. [Figure 9] It is a cross-sectional view showing one step of the manufacturing method of the mask shown in FIGS. 6A and 6B. [Figure 10] It is a cross-sectional view showing one step of the manufacturing method of the mask shown in FIGS. 6A and 6B. [Figure 11] It is a cross-sectional view showing one step of the manufacturing method of the mask shown in FIGS. 6A and 6B. [Figure 12] It is a cross-sectional view showing one step of the manufacturing method of the mask shown in FIGS. 6A and 6B. [Figure 13] It is a cross-sectional view showing one step of the manufacturing method of the mask shown in FIGS. 6A and 6B. [Figure 14] It is a cross-sectional view showing one step of the manufacturing method of the mask shown in FIGS. 6A and 6B. [Figure 15] It is a cross-sectional view showing one step of the manufacturing method of the mask shown in FIGS. 6A and 6B. [Figure 16] It is a cross-sectional view showing one step of the manufacturing method of the mask shown in FIGS. 6A and 6B. [Figure 17]Figures 6A and 6B are cross-sectional views showing one step in the manufacturing process of the mask shown. [Figure 18] Figures 6A and 6B are cross-sectional views showing one step in the manufacturing process of the mask shown. [Figure 19] Figures 6A and 6B are cross-sectional views showing one step in the manufacturing process of the mask shown. [Figure 20A] This figure corresponds to Figure 6A and is a plan view showing one modified example of the mask. [Figure 20B] This figure shows a magnified view of the area enclosed by the dashed line in Figure 20A. [Figure 21] Figure 20A is a cross-sectional view showing one step in the manufacturing process of the mask shown. [Figure 22A] Figure 20A is a cross-sectional view showing one step in the manufacturing process of the mask shown. [Figure 22B] This figure shows a magnified view of the area enclosed by the dashed line in Figure 22A. [Figure 23] Figure 20A is a cross-sectional view showing one step in the manufacturing process of the mask shown. [Figure 24] This is a cross-sectional view showing one step of a modified example of the mask manufacturing method shown in Figure 20A. [Figure 25] This is a cross-sectional view showing one step of a modified example of the mask manufacturing method shown in Figure 20A. [Figure 26A] This is a cross-sectional view showing one step of a modified example of the mask manufacturing method shown in Figure 20A. [Figure 26B] This figure shows a magnified view of the area enclosed by the dashed line in Figure 26A. [Figure 27] This is a cross-sectional view showing one step of a modified example of the mask manufacturing method shown in Figure 20A. [Figure 28] Figures 6A and 6B show a cross-sectional view illustrating one step of a modified method for manufacturing the mask shown in Figures 6A and 6B. [Figure 29] Figures 6A and 6B show a cross-sectional view illustrating one step of a modified method for manufacturing the mask shown in Figures 6A and 6B. [Figure 30] Figures 6A and 6B show a cross-sectional view illustrating one step of a modified method for manufacturing the mask shown in Figures 6A and 6B. [Figure 31]Figures 6A and 6B show a cross-sectional view illustrating one step of a modified method for manufacturing the mask shown in Figures 6A and 6B. [Figure 32] Figures 6A and 6B show a cross-sectional view illustrating one step of a modified method for manufacturing the mask shown in Figures 6A and 6B. [Figure 33] This figure corresponds to Figure 5B and is a plan view showing one modified example of the mask. [Figure 34] This is a plan view of a missing portion or recess, and the area surrounded by said missing portion or recess, and is a plan view showing one modified example of a mask. [Figure 35] This is a plan view of a missing portion or recess, and the area surrounded by said missing portion or recess, and is a plan view showing one modified example of a mask. [Figure 36] This is a plan view of a missing portion or recess, and the area surrounded by said missing portion or recess, and is a plan view showing one modified example of a mask. [Figure 37] This is a plan view of a missing portion or recess, and the area surrounded by said missing portion or recess, and is a plan view showing one modified example of a mask. [Figure 38] This is a plan view of a missing portion or recess, and the area surrounded by said missing portion or recess, and is a plan view showing one modified example of a mask. [Figure 39A] This figure corresponds to Figure 7A and is a plan view showing one modified example of the mask. [Figure 39B] This figure corresponds to Figure 7B and is a plan view showing one modified example of the mask. [Figure 40] This figure shows an example of a device equipped with organic devices. [Modes for carrying out the invention]

[0010] In this specification and these drawings, unless otherwise specified, terms such as "substrate," "sheet," and "film," which refer to the material that forms the basis of a certain configuration, are not distinguished from one another solely on the basis of differences in name.

[0011] In this specification and these drawings, unless otherwise specified, terms that identify shapes, geometric conditions, and their degrees, such as "parallel" and "orthogonal," as well as values ​​of lengths and angles, should be interpreted not strictly, but to include a range in which similar functionality can be expected.

[0012] In this specification and these drawings, unless otherwise specified, when a component or region is described as being "on top of," "below," "upper side," "lower side," or "upward" or "downward" of another component or region, this includes cases where one component is in direct contact with another. Furthermore, it also includes cases where another component is located between one component and another, i.e., where they are indirectly in contact. In addition, unless otherwise specified, the terms "up," "upper side," or "upward," or "down," "lower side," or "downward," may be used with the direction of up and down reversed.

[0013] In this specification, if multiple candidate upper limits and multiple candidate lower limits are given for a certain parameter, the numerical range of that parameter may be constructed by combining any one candidate upper limit and any one candidate lower limit. For example, consider the case where it is stated that "Parameter B is, for example, A1 or greater, and may be A2 or greater, and may be A3 or greater. Parameter B is, for example, A4 or less, and may be A5 or less, and may be A6 or less." In this case, the numerical range of parameter B may be A1 or greater and A4 or less, A1 or greater and A5 or less, A1 or greater and A6 or less, A2 or greater and A4 or less, A2 or greater and A5 or less, A2 or greater and A6 or less, A3 or greater and A4 or less, A3 or greater and A5 or less, and A3 or greater and A6 or less.

[0014] In this specification and these drawings, unless otherwise specified, the state in which a face of element A "facing" a face of element B includes not only the case where a face of element A is in contact with a face of element B, but also the case where element C is located between the faces of element A and element B. In other words, the term "facing" is a term that describes the orientation of the two faces.

[0015] In this specification and these drawings, unless otherwise specified, identical or similarly functioning parts are denoted by the same or similar reference numerals, and repeated descriptions may be omitted. Furthermore, the dimensional ratios in the drawings may differ from the actual ratios for illustrative purposes, and some components may be omitted from the drawings.

[0016] Unless otherwise specified in this specification and these drawings, one embodiment described herein may be combined with other examples to the extent that it does not conflict with the original. Furthermore, other examples may be combined with each other to the extent that it does not conflict with the original.

[0017] In this specification and these drawings, unless otherwise specified, when disclosing two or more steps or processes relating to a method such as a manufacturing method, other steps or processes not disclosed may be performed between the disclosed steps or processes. Furthermore, the order of the disclosed steps or processes is arbitrary as long as it does not create a contradiction.

[0018] In these drawings, to clarify the directional relationships between drawings, the common first direction D1 and second direction D2 are indicated by arrows with common symbols in some drawings. Arrows pointing from the plane of the drawing toward the viewer, along the direction perpendicular to the plane of the drawing, are indicated by a symbol of a dot inside a circle, as shown in Figure 6A, for example.

[0019] In one embodiment of this specification, an example is described in which a mask is used to form an organic layer or electrodes on a substrate when manufacturing an organic EL display device. However, the use of the mask is not particularly limited, and this embodiment can be applied to masks used for various purposes. For example, the mask of this embodiment may be used to form electrodes for a device that displays or projects images or videos for representing virtual reality (VR) or augmented reality (AR). The mask of this embodiment may also be used to form electrodes for display devices other than organic EL displays, such as electrodes for liquid crystal displays. Furthermore, the mask of this embodiment may be used to form electrodes for organic devices other than display devices, such as electrodes for pressure sensors.

[0020] A first aspect of this disclosure is a mask, A first layer comprising a first surface, a second surface located opposite the first surface, and at least one first opening penetrating from the first surface to the second surface, A metal layer comprising a third surface facing the second surface, a fourth surface located on the opposite side of the third surface, and a plurality of second openings penetrating from the third surface to the fourth surface and overlapping the first opening in a plan view, Includes, The first layer comprises silicon or a silicon compound, The metal layer includes an effective region in which the plurality of second openings are formed, and a peripheral region surrounding the effective region. The peripheral region is a mask having a section surrounded by a recess that slopes inward from the fourth surface toward the third surface in a plan view, or a defect that penetrates the metal layer.

[0021] A second aspect of this disclosure is that, in the mask according to the first aspect described above, the recess or the defect may continuously surround the section.

[0022] A third aspect of the present disclosure is a mask according to the first or second aspect described above, wherein the section may be discontinuously surrounded by a plurality of recesses or defects that extend along different portions of the contour of the section in a plan view.

[0023] A fourth aspect of this disclosure is that, in the mask according to the third aspect described above, the distance between adjacent ends of the recesses or defects along the contour may be one-tenth or less of the length of the contour.

[0024] A fifth aspect of this disclosure is a mask according to any one of the first to fourth aspects described above, The aforementioned section may be surrounded by the aforementioned recess, The thickness of the bottom of the recess may be half or less of the average thickness of the section.

[0025] A sixth aspect of the present disclosure is a mask according to any one of the first to fifth aspects described above, wherein, in a plan view, the peripheral region may have a plurality of sections around a single effective region, each surrounded by the recess or the defect.

[0026] A seventh aspect of this disclosure is a mask according to the sixth aspect described above, In a plan view, the contour of the first opening may have a portion extending in a first direction and a portion extending in a second direction different from the first direction. The plurality of sections may include, in a plan view, sections adjacent to or overlapping with the portion extending in the first direction, and sections adjacent to or overlapping with the portion extending in the second direction.

[0027] An eighth aspect of this disclosure is a mask according to any one of the first to seventh aspects described above, wherein the parcel may overlap the first layer.

[0028] The ninth aspect of this disclosure is a mask according to any one of the first to eighth aspects described above, The first layer may include a plurality of first openings. The aforementioned compartment may overlap with the region between adjacent first openings in the first layer.

[0029] A tenth aspect of the present disclosure is a mask according to any one of the first to ninth aspects described above, wherein at least a portion of the compartment may overlap with the region between the outer edge of the first layer and the first opening.

[0030] An eleventh aspect of the present disclosure is a mask according to any one of the first to tenth aspects described above, wherein at least a portion of the compartment overlaps the first opening.

[0031] A twelfth aspect of this disclosure is a mask according to any one of the first to eleventh aspects described above, The peripheral region may have a section surrounded by a defect that penetrates the metal layer in a plan view. The missing portion may overlap the first layer.

[0032] A thirteenth aspect of this disclosure is that a mask according to any one of the first to twelfth aspects described above may include an intermediate layer that is located between the second surface and the third surface and includes an intermediate opening that overlaps the first opening. The peripheral region may have a section surrounded by a defect that penetrates the metal layer in a plan view. The missing portion may overlap the intermediate layer.

[0033] A fourteenth aspect of this disclosure is a mask according to any one of the first to thirteenth aspects described above, wherein a material having lower conductivity than the metal layer is disposed within the recess or the defect.

[0034] A fifteenth aspect of the present disclosure is a mask according to any one of the first to fourteenth aspects described above, wherein silicon oxide or silicon nitride may be disposed within the recess or the defect.

[0035] A sixteenth aspect of the present disclosure is a mask according to any one of the first to fifteenth aspects described above, wherein the section may include a metal different from the metal forming the effective area.

[0036] A 17th aspect of the present disclosure is a mask according to any one of the first to 16 aspects described above, wherein the wall surface defining the first opening may include, in a plan view, a tapered surface that moves toward or away from the center of the first opening as it moves from the first surface toward the second surface.

[0037] An eighteenth aspect of this disclosure is a mask according to the seventeenth aspect described above, wherein the tapered surface may be directly connected to the second surface.

[0038] A 19th aspect of this disclosure is a mask according to any one of the first to 18th aspects described above, The wall surface defining the first opening may include a pair of first-direction wall surfaces extending in a first direction and facing each other, and a pair of second-direction wall surfaces extending in a second direction different from the first direction and facing each other. At least one of the first direction wall surface and the second direction wall surface may include a tapered surface that approaches or moves away from the center of the first opening as it moves from the first surface to the second surface. The dimensions of the wall surface in the first direction, measured in a direction perpendicular to the first direction, and the dimensions of the wall surface in the second direction, measured in a direction perpendicular to the second direction, may be different.

[0039] A 20th aspect of this disclosure is a mask according to the 19th aspect described above, wherein the difference between the dimension of the wall surface in the first direction measured in a direction perpendicular to the first direction and the dimension of the wall surface in the second direction measured in a direction perpendicular to the second direction may be 5 μm or more.

[0040] A 21st aspect of the present disclosure is a mask according to the 19th or 20th aspect described above, wherein the tapered surface may be directly connected to the second surface.

[0041] A 22nd aspect of this disclosure is a mask according to any one of the first to 21st aspects described above, The wall surface defining the first opening may include a pair of first-direction wall surfaces extending in a first direction and facing each other, and a pair of second-direction wall surfaces extending in a second direction different from the first direction and facing each other. The first direction wall surface may include a first direction tapered surface that approaches or moves away from the center of the first opening as it moves from the first surface toward the second surface. The second direction wall surface may include a second direction tapered surface that approaches or moves away from the center of the first opening as it moves from the first surface toward the second surface. The first direction taper width, which is the dimension of the first direction tapered surface measured in a direction perpendicular to the first direction, and the second direction taper width, which is the dimension of the second direction tapered surface measured in a direction perpendicular to the second direction, may be different.

[0042] A 23rd aspect of this disclosure is that, in the mask according to the 22nd aspect described above, the difference between the first direction taper width and the second direction taper width may be 5 μm or more.

[0043] A 24th aspect of the present disclosure is a mask according to the 22nd or 23rd aspect described above, wherein the first direction tapered surface and the second direction tapered surface may be directly connected to the second surface.

[0044] A 25th aspect of this disclosure is a method for manufacturing an organic device, comprising the step of forming an organic layer on a substrate by a deposition method using a mask according to any one of the first to 24 aspects described above.

[0045] One embodiment of this disclosure will be described in detail with reference to the drawings. Note that the embodiments described below are examples of embodiments of this disclosure, and this disclosure is not to be construed as being limited to these embodiments only.

[0046] This section describes an organic device 100 comprising an organic layer formed by using a mask. The organic device 100 includes an organic layer or electrode formed by using a mask. Figure 1 is a cross-sectional view showing an example of the organic device 100.

[0047] The organic device 100 includes a substrate 110 and a plurality of elements 115 arranged along the in-plane direction of the substrate 110. The substrate 110 includes a first surface 111 and a second surface 112 located opposite the first surface 111. The elements 115 are located on the first surface 111. The elements 115 are, for example, pixels. The substrate 110 may include two or more types of elements 115. For example, the substrate 110 may include a first element 115A and a second element 115B. Although not shown, the substrate 110 may also include a third element. The first element 115A, the second element 115B, and the third element are, for example, red pixels, blue pixels, and green pixels.

[0048] The element 115 may include a first electrode 120, an organic layer 130 located on the first electrode 120, and a second electrode 140 located on the organic layer 130.

[0049] The organic device 100 may include an insulating layer 160 located between two adjacent first electrodes 120 in a plan view. The insulating layer 160 may contain, for example, polyimide. The insulating layer 160 may overlap the edges of the first electrodes 120. "Plan view" means viewing the object along the direction normal to the surface of a plate-like member such as a substrate 110.

[0050] The substrate 110 may be an insulating material. The material of the substrate 110 can be, for example, a rigid material such as silicon, quartz glass, Pyrex® glass, or synthetic quartz plate, or a flexible material such as a resin film, optical resin plate, or thin glass. The substrate 110 may have a planar shape similar to that of a silicon wafer used in semiconductor manufacturing. In this case, the substrate 110 can be processed using equipment that performs semiconductor manufacturing processes. For example, a first electrode 120, an insulating layer 160, etc., can be formed on the substrate 110 using equipment that performs semiconductor manufacturing processes.

[0051] The element 115 is configured to perform some function when a voltage is applied between the first electrode 120 and the second electrode 140, or when a current flows between the first electrode 120 and the second electrode 140. For example, if the element 115 is a pixel of an organic EL display device, the element 115 can emit light that constitutes an image.

[0052] The first electrode 120 includes a conductive material. For example, the first electrode 120 includes a metal, a conductive metal oxide, or other conductive inorganic material. The first electrode 120 may also include a transparent and conductive metal oxide, such as indium tin oxide.

[0053] The organic layer 130 contains an organic material. When the organic layer 130 is energized, it can perform some function. Energization means that a voltage is applied to the organic layer 130 or that an electric current flows through the organic layer 130. The organic layer 130 can be an emissive layer that emits light when energized, or a layer whose light transmittance or refractive index changes when energized. The organic layer 130 may also contain an organic semiconductor material.

[0054] As shown in Figure 1, the organic layer 130 may include a first organic layer 130A and a second organic layer 130B. The first organic layer 130A is included in the first element 115A. The second organic layer 130B is included in the second element 115B. Although not shown in the figure, the organic layer 130 may also include a third organic layer included in the third element. The first organic layer 130A, the second organic layer 130B, and the third organic layer are, for example, a red light-emitting layer, a blue light-emitting layer, and a green light-emitting layer.

[0055] When a voltage is applied between the first electrode 120 and the second electrode 140, the organic layer 130 located between them is driven. If the organic layer 130 is a light-emitting layer, light is emitted from the organic layer 130 and extracted to the outside from either the second electrode 140 side or the first electrode 120 side.

[0056] The organic layer 130 may further include a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, and the like.

[0057] The second electrode 140 may contain a conductive material such as a metal. Examples of materials that can be used for the second electrode 140 include platinum, gold, silver, copper, iron, tin, chromium, aluminum, indium, lithium, sodium, potassium, calcium, magnesium, carbon, and alloys thereof. As shown in Figure 1, the second electrode 140 may extend across two adjacent organic layers 130 in a plan view.

[0058] Next, a method for forming the organic layer 130 on the substrate 110 by vapor deposition will be described. Figure 2 shows a vapor deposition apparatus 10. The vapor deposition apparatus 10 performs a vapor deposition process in which a vapor deposition material is deposited onto the target object.

[0059] As shown in Figure 2, the deposition apparatus 10 may include a deposition source 6, a heater 8, and a mask 20 inside. The deposition apparatus 10 may further include an exhaust means for creating a vacuum atmosphere inside the deposition apparatus 10. The deposition source 6 is, for example, a crucible. The deposition source 6 contains a deposition material 7, such as an organic material or a metallic material. The heater 8 heats the deposition source 6 to evaporate the deposition material 7 under a vacuum atmosphere.

[0060] The mask 20 includes an incident surface 201, an exit surface 202, and a second opening 41. The incident surface 201 faces the deposition source 6. The exit surface 202 is located on the opposite side of the incident surface 201. The exit surface 202 faces the first surface 111 of the substrate 110. A portion of the deposition material 7 that enters the mask 20 from the exit surface 202 passes through the second opening 41 and exits from the exit surface 202. The deposition material 7 that exits from the exit surface 202 adheres to the first surface 111 of the substrate 110. The exit surface 202 of the mask 20 may be in contact with the first surface 111 of the substrate 110.

[0061] As shown in Figure 2, the deposition apparatus 10 may be equipped with a magnet 5 positioned on the second surface 112 side of the substrate 110. If the mask 20 contains a magnetic material, the magnet 5 can pull the mask 20 toward the substrate 110 by magnetic force. This reduces or eliminates the gap between the mask 20 and the substrate 110. This suppresses the occurrence of shadows during the deposition process. In this application, a shadow is a phenomenon in which the thickness of the organic layer 130 formed near the wall surface of the second opening 41 is smaller than the thickness of the organic layer 130 formed at the center of the second opening 41. Shadows are caused by the deposition material 7 adhering to the wall surface of the mask 20, the deposition material 7 entering the gap between the mask 20 and the substrate 110, etc.

[0062] Next, the mask 20 will be described in detail. Figure 3 is a plan view showing an example of the mask 20 as seen from the incident surface 201. Figure 4 is a plan view showing an example of the mask 20 as seen from the exit surface 202. Figure 5A is an enlarged view of the area enclosed by the dashed line in Figure 3. Figure 5B is an enlarged view of the area enclosed by the dashed line in Figure 3 as seen from the exit surface 202. Figure 6A is a cross-sectional view of the mask 20 in Figure 3 along the VIA-VIA line. Figure 6B is a cross-sectional view of the mask 20 in Figure 3 along the VIB-VIB line. Figure 7A is an enlarged view of the area enclosed by the dashed line in Figure 6A. Figure 7B is an enlarged view of the area enclosed by the dashed line in Figure 6B.

[0063] As shown in Figures 3 and 4, the mask 20 includes a mask body 21. The mask body 21 comprises a first layer 30 and a metal layer 40. The mask body 21 may also include an intermediate layer 50. The first layer 30, the intermediate layer 50, and the metal layer 40 may be arranged in this order from the incident surface 201 to the exit surface 202. The mask 20 may further include a low-conductivity layer 60. In other words, the mask 20 may comprise the mask body 21 and the low-conductivity layer 60. Each layer will be described below.

[0064] The first layer 30 includes a first surface 301, a second surface 302, a first opening 31, and a first wall surface 32. The first surface 301 may constitute the incident surface 201. The second surface 302 is located on the opposite side of the first surface 301. The first wall surface 32 is located between the first surface 301 and the second surface 302.

[0065] The first opening 31 penetrates the first layer 30 from the first surface 301 to the second surface 302. As shown in Figure 3, the first layer 30 may contain a plurality of first openings 31. The plurality of first openings 31 may be aligned in the first direction D1 and the second direction D2. The second direction D2 may be perpendicular to the first direction D1. The first direction D1 and the second direction D2 are parallel to the first surface 301.

[0066] One first aperture 31 may correspond to one screen of an organic EL display device. A mask 20 containing multiple first apertures 31 can simultaneously form patterns of organic layers corresponding to multiple screens on the substrate 110. As shown in Figure 3, the first aperture 31 may have a rectangular contour in plan view. The first aperture 31 is defined by a first wall surface 32. In other words, the first wall surface 32 faces the first aperture 31.

[0067] The first wall surface 32 extends generally along the direction normal to the first surface 301. As shown in Figure 5A, the first wall surface 32 has a pair of first-direction wall surfaces 321 and a pair of second-direction wall surfaces 322. The first-direction wall surfaces 321 extend in the first direction D1 in a plan view. The second-direction wall surfaces 322 extend in the second direction D2 in a plan view. The first wall surface 32 will be described in detail later.

[0068] As shown in Figure 3, the region of the first layer 30 in which the first opening 31 is not formed may be divided into an outer region 35 and an inner region 36. The inner region 36 is the region located between two adjacent first openings 31 in a plan view. The outer region 35 is the region located between the outer edge 303 of the first layer 30 and the first opening 31 in a plan view. As shown in Figure 3, the inner region 36 may extend in a first direction D1 and a second direction D2.

[0069] As shown in Figures 3 and 4, the first layer 30 may include alignment marks 39. The alignment marks 39 are formed, for example, on the second surface 302. The alignment marks 39 may also be formed on the first surface 301. The alignment marks 39 are used, for example, to adjust the relative position of the substrate 110 with respect to the mask 20. If the substrate 110 is transparent to visible light, the alignment marks 39 can be seen through the substrate 110.

[0070] As shown in Figures 3 and 4, the alignment mark 39 may have a circular outline in plan view. Although not shown, the alignment mark 39 may have an outline other than a circle, such as a rectangle or a cross. The alignment mark 39 may be located in the outer region 35 or in the inner region 36.

[0071] The shape of alignment mark 39 in the cross-sectional view is arbitrary. For example, the alignment mark 39 may include a recess located on the first surface 301 or the second surface 302. The alignment mark 39 may also include a hole penetrating the first layer 30 from the first surface 301 to the second surface 302. The recess and hole may be formed by etching the first surface 301 or the second surface 302. The recess and hole may also be formed by irradiating the first surface 301 or the second surface 302 with a laser. For example, the alignment mark 39 may include a layer located on the first surface 301 or the second surface 302. The layer is formed of a different material from the first layer 30. Alignment marks 39 may be formed on layers other than the first layer 30.

[0072] The first layer 30 contains silicon or a silicon compound. The silicon compound is, for example, silicon carbide (SiC). The first layer 30 is manufactured, for example, by processing a silicon wafer. As shown in Figure 3, the outer edge 303 of the first layer 30 may include a linear portion. The linear portion is also called an orientation flat. Although not shown, a notch may be formed in the outer edge 303. The notch is also called a notch. The orientation flat and notch represent the crystal orientation of the silicon wafer. The silicon compound may be glass such as quartz glass.

[0073] The maximum dimension S1 of the first layer 30 in plan view is, for example, 100 mm or more, may be 150 mm or more, or 200 mm or more. The dimension S1 is, for example, 500 mm or less, may be 400 mm or less, or 300 mm or less.

[0074] The dimension S2 of the first opening 31 in the direction in which the first openings 31 are aligned is, for example, 5 mm or more, may be 10 mm or more, or may be 20 mm or more. The dimension S2 is, for example, 100 mm or less, may be 50 mm or less, or may be 30 mm or less.

[0075] The spacing S3 between two first openings 31 in the direction in which the first openings 31 are aligned is, for example, 0.1 mm or more, may be 0.5 mm or more, or may be 1.0 mm or more. The spacing S3 is, for example, 20 mm or less, may be 15 mm or less, or may be 10 mm or less.

[0076] The thickness of the first layer 30 is defined as the maximum thickness T1 of the outer region 35. The thickness T1 is, for example, 50 μm or more, may be 100 μm or more, or 200 μm or more. The thickness T1 is, for example, 1000 μm or less, may be 800 μm or less, or 600 μm or less.

[0077] Next, the metal layer 40 will be described. The metal layer 40 includes a third surface 401, a fourth surface 402, a plurality of second openings 41, a second wall surface 42, a defect 43, and a third wall surface 44. The metal layer 40 may also include a plurality of defect 43. The third surface 401 faces the second surface 302 of the first layer 30. The fourth surface 402 is located on the opposite side of the third surface 401. The second openings 41 and the defect 43 penetrate the metal layer 40 from the third surface 401 to the fourth surface 402. The second wall surface 42 and the third wall surface 44 are located between the third surface 401 and the fourth surface 402. The second wall surface 42 faces the second opening 41. The third wall surface 44 faces the defect 43.

[0078] The metal layer 40 may be divided into a peripheral region 48 and an effective region 49 (see Figures 5A and 5B). The effective region 49 overlaps with the first opening 31. In the illustrated example, the effective region 49 also overlaps with the intermediate opening 54 of the intermediate layer 50, which will be described later. The peripheral region 48 is the region surrounding the effective region 49. At least a portion of the peripheral region 48 overlaps with the first layer 30 in a plan view. A portion of the peripheral region 48 may also overlap with the first opening 31. In the illustrated example, the peripheral region 48 overlaps with the intermediate layer 50 in a plan view.

[0079] The second aperture 41 is formed in the effective region 49. One second aperture 41 corresponds to one deposition layer. One deposition layer is, for example, one organic layer 130. A group of regularly arranged second apertures 41 corresponds to one screen of the organic EL display device. As shown in Figure 3, a group of regularly arranged second apertures 41 may overlap with one first aperture 31 in a plan view. Also, as shown in Figure 5A, a group of regularly arranged second apertures 41 may overlap with one intermediate aperture 54 in a plan view.

[0080] As shown in Figures 7A and 7B, the second wall surface 42 may include a tapered surface 42a that widens away from the center of the second opening 41 as it moves from the fourth surface 402 toward the third surface 401. Including the tapered surface 42a in the second wall surface 42 can suppress the occurrence of shadows in the vicinity of the second wall surface 42. In the illustrated example, the solid shape of the second opening 41 as a whole is a frustum of a pyramidal pyramid. The second wall surface 42 corresponds to the side surface of the frustum of a pyramidal pyramid. Of course, the solid shape of the second opening 41 may also be a frustum of a cone. Furthermore, the second wall surface 42 does not have to include the tapered surface 42a. In this case, the solid shape of the second opening 41 may be a prism or a cylinder.

[0081] In Figures 7A and 7B, the reference numeral S4 represents the width of the tapered surface 42a in the direction in which the second openings 41 are aligned. The width S4 is, for example, 0.2 μm or more, may be 0.5 μm or more, or may be 1.0 μm or more. The width S4 is, for example, 25 μm or less, may be 20 μm or less, or may be 10 μm or less.

[0082] In Figures 7A and 7B, the symbol θ1 represents the angle formed by the second wall surface 42 and the third surface 401. The angle θ1 is, for example, 50° or more, may be 55° or more, may be 60° or more, or may be 65° or more. The angle θ1 is, for example, less than 90°, may be 85° or less, or may be 80° or less.

[0083] The dimension S5 of the second aperture 41 in plan view is, for example, 1.0 μm or more, may be 2.0 μm or more, or may be 3.0 μm or more. The dimension S5 is, for example, 25 μm or less, may be 10 μm or less, or may be 5.0 μm or less.

[0084] The pitch of the second aperture 41 refers to the distance P1 between the centers of two adjacent second apertures 41 in the direction in which they are aligned. The pitch P1 of the second aperture 41 is, for example, 1.0 μm or more, may be 2.0 μm or more, or may be 3.0 μm or more. The pitch P1 is, for example, 25 μm or less, may be 10 μm or less, or may be 5.0 μm or less.

[0085] The spacing S6 between two second apertures 41 in the direction in which the second apertures 41 are aligned is, for example, 1.0 μm or more, may be 2.0 μm or more, or may be 3.0 μm or more. The spacing S6 is, for example, 25.0 μm or less, may be 10.0 μm or less, or may be 5.0 μm or less.

[0086] The distance S7 between the first wall surface 32 and the second opening 41 in a plan view may be greater than the distance S6. This helps to suppress the occurrence of shadows in the second opening 41 that is close to the first wall surface 32.

[0087] The defect 43 is formed in the peripheral region 48. The defect 43 surrounds a portion of the peripheral region 48. In other words, the peripheral region 48 has a section 48A surrounded by the defect 43. The defect 43, the section 48A surrounded by the defect 43, and the low-conductivity layer 60 placed in the defect 43 will be described in detail later.

[0088] The metal layer 40 contains a metal. The metal may be a magnetic material or a non-magnetic material. Magnetic materials include, for example, nickel, iron, cobalt, and alloys thereof. Non-magnetic materials include, for example, copper, aluminum, titanium, chromium, and alloys thereof. The metal layer 40 may also contain a semiconductor. For example, the metal layer 40 may contain polycrystalline silicon. The metal layer 40 may consist of one layer or multiple layers. Furthermore, the effective area 49 and section 48A of the metal layer 40 may be formed of different materials.

[0089] The thickness of the metal layer 40 is defined as the maximum thickness T2 of the peripheral region 48. The thickness T2 of the metal layer 40 is smaller than the thickness T1 of the first layer 30. The thickness T2 is, for example, 25.0 μm or less, and may be 10.0 μm or less, or 5.0 μm or less. This can suppress the occurrence of shadows. The thickness T2 is, for example, 0.5 μm or more, and may be 1.0 μm or more, or 2.0 μm or more. This can suppress the occurrence of defects such as pinholes or deformation in the metal layer 40.

[0090] The metal layer 40 may include alignment marks. The alignment marks of the metal layer 40 may be formed separately from the alignment marks 39 of the first layer 30, or they may be formed in place of the alignment marks 39 of the first layer 30.

[0091] Next, the intermediate layer 50 will be described. In the example shown in Figures 6A and 6B, the intermediate layer 50 is located between the first layer 30 and the metal layer 40. The intermediate layer 50 includes a fifth surface 501, a sixth surface 502, an intermediate opening 54, and a fourth wall surface 55. The fifth surface 501 faces the second surface 302 of the first layer 30. The sixth surface 502 is located on the opposite side of the fifth surface 501 and faces the third surface 401 of the metal layer 40. The intermediate opening 54 penetrates the intermediate layer 50 from the fifth surface 501 to the sixth surface 502. The fourth wall surface 55 is located between the fifth surface 501 and the sixth surface 502. The fourth wall surface 55 faces the intermediate opening 54.

[0092] The intermediate layer 50 is positioned so as not to overlap the second opening 41 in a plan view. This suppresses the occurrence of shadows caused by the intermediate layer 50. The intermediate layer 50 may be positioned so as to overlap the defect 43. The intermediate layer 50 may close the end of the defect 43 on the third surface 401 side.

[0093] As shown in Figure 3, the intermediate layer 50 may include a plurality of intermediate openings 54. The plurality of intermediate openings 54 may be arranged in a first direction D1 and a second direction D2. As shown in Figure 3, the intermediate openings 54 may have a rectangular contour in plan view.

[0094] As shown in Figure 5A, one intermediate opening 54 may overlap with one first opening 31. Alternatively, one intermediate opening 54 may overlap with a group of regularly arranged second openings 41. In other words, the intermediate opening 54 may overlap with the effective region 49. The intermediate layer 50 may overlap with the peripheral region 48.

[0095] As described above, the fourth wall surface 55 faces the intermediate opening 54. In the example shown in Figures 7A and 7B, the fourth wall surface 55 may extend along the direction normal to the fifth surface 501. In plan view, the fourth wall surface 55 may be located within the first opening 31. In other words, the intermediate opening 54 may overlap with a part of the first opening 31. The fourth wall surface 55 may define the boundary between the effective area 49 and the peripheral area 48.

[0096] The distance S8 between the fourth wall surface 55 and the second opening 41 in a plan view may be greater than the distance S6. The larger the distance S8, the easier it is for the deposited material moving from the fourth wall surface 55 toward the second opening 41 adjacent to the fourth wall surface 55 to pass through the second opening 41. By making the distance S8 greater than the distance S6, it is possible to suppress the occurrence of shadows in the second opening 41 adjacent to the fourth wall surface 55.

[0097] The intermediate layer 50 includes a layer that performs some function relative to the first layer 30 or the metal layer 40. For example, the intermediate layer 50 includes a stopper layer 51. The stopper layer 51 is located between the first layer 30 and the metal layer 40. The stopper layer 51 may be in contact with the second surface 302 of the first layer 30. The stopper layer 51 may form the fifth surface 501 of the intermediate layer 50.

[0098] The stopper layer 51 may have the function of stopping etching in the process of processing the first layer 30 by etching. Specifically, the stopper layer 51 has resistance to the etchant that etches the first layer 30. The stopper layer 51 may include, for example, a metallic material, an inorganic compound, or an organic compound. Metallic materials include, for example, aluminum, aluminum alloys, titanium, or titanium alloys. Aluminum alloys include, for example, aluminum and neodymium. Inorganic compounds include, for example, silicon oxide. Organic compounds include, for example, resins. Organic compounds may be photosensitive. For example, the stopper layer 51 may contain a photoresist. Organic compounds do not have to be photosensitive.

[0099] The thickness of the stopper layer 51 is not particularly limited as long as it suppresses etching of the metal layer 40 during the process of processing the first layer 30. For example, the thickness of the stopper layer 51 may be less than or equal to the thickness T2 of the metal layer 40. The thickness of the stopper layer 51 may be, for example, 5 nm or more, 50 nm or more, or 75 nm or more. The thickness of the stopper layer 51 may be, for example, 100 μm or less, 50 μm or less, 10.0 μm or less, 5.0 μm or less, 1.0 μm or less, or 150 nm or less. The higher the resistance of the stopper layer 51 to the etchant for the first layer 30, the smaller the thickness of the stopper layer 51 can be. It is particularly preferable that the thickness of the stopper layer 51 be 1.0 μm or less.

[0100] The intermediate layer 50 may include a seed layer 52. The seed layer 52 may be located between the stopper layer 51 and the metal layer 40. The seed layer 52 may be in contact with the third surface 401 of the metal layer 40. The seed layer 52 may form the sixth surface 502 of the intermediate layer 50.

[0101] The seed layer 52 carries charge to the plating solution when the metal layer 40 is formed by electroplating. Specifically, the seed layer 52 may contain conductive materials such as metallic materials or conductive oxides. More specifically, the seed layer 52 may contain gold, copper, nickel, titanium, aluminum, iron, chromium, tantalum, tungsten, indium tin oxide (ITO), and alloys thereof. For example, the seed layer 52 may contain an iron alloy containing nickel. An example of an iron alloy containing nickel is permalloy. Permalloy is an iron alloy containing 35% to 80% by weight of nickel.

[0102] The seed layer 52 may be formed by, for example, electroless plating, sputtering, vacuum deposition, or ion plating. The seed layer 52 includes a seventh surface 521 facing the second surface 302 of the first layer 30, and an eighth surface 522 located on the opposite side of the seventh surface 521. In the illustrated example, the eighth surface 522 forms the sixth surface 502 of the intermediate layer 50.

[0103] The thickness of the seed layer 52 is not particularly limited as long as it can form the metal layer 40. For example, the thickness of the seed layer 52 may be less than the thickness T2 of the metal layer 40, or it may be greater than or equal to the thickness T2 of the metal layer 40. The thickness of the seed layer 52 may be, for example, 2.0 nm or more, 10.0 nm or more, or 30.0 nm or more. The thickness of the seed layer 52 may be, for example, 5.0 μm or less, 1.0 μm or less, or 150 nm or less.

[0104] The intermediate layer 50 may include an adhesion layer 53 between the stopper layer 51 and the seed layer 52 to improve the adhesion between the stopper layer 51 and the seed layer 52. The adhesion layer 53 may contain titanium, chromium, titanium oxide, chromium nitride, or zinc oxide. Such an adhesion layer 53 can be formed, for example, by the sol-gel method, sputtering method, or vacuum deposition method. The thickness of the adhesion layer 53 is not particularly limited, but for example it may be 5 nm or more, 6 nm or more, or 8 nm or more. The thickness of the adhesion layer 53 may be, for example, 70 nm or less, 60 nm or less, or 50 nm or less.

[0105] The intermediate layer 50 may include alignment marks. The alignment marks of the intermediate layer 50 may be formed separately from the alignment marks of the first layer 30 or the metal layer 40, or they may be formed in place of the alignment marks of the first layer 30 or the metal layer 40.

[0106] The thickness of each layer, the dimensions of each component, and the spacing can be measured by observing a cross-sectional image of the mask 20 using a scanning electron microscope.

[0107] Incidentally, it is desirable to make the thickness of the vapor-deposited material 7 attached to the substrate 110 uniform. For example, it is desirable to reduce the difference in thickness of the multiple organic layers 130 formed within a region corresponding to one screen of the organic EL display device on the substrate 110. By making the thickness of the multiple organic layers 130 uniform, the display quality within the screen can be made uniform. For example, the amount of light emitted within the screen can be made uniform. However, according to the findings obtained by the inventors of this invention, the thickness of the vapor-deposited layer near the outer edge of the region tends to be greater than the thickness of the vapor-deposited layer in the center of the region. As a result, the amount of light emitted differs between the center and the outer edge of the screen. Furthermore, it has been found that in this case, moiré patterns are likely to occur near the outer edge of the screen. This is thought to be due to the following reason: In general, misalignment between the first electrode 120 and the vapor-deposited layer is likely to occur near the outer edge of the region. This is because, when a vapor deposition process is performed on the substrate 110 using a mask 20, the substrate 110 and the mask 20 are generally aligned such that the misalignment between the first electrode 120 in the center of the above-mentioned area of ​​the substrate 110 and the second opening 41 in the center of the effective area 49 of the mask 20 is minimized. When a thick vapor deposition layer is formed in an area where the misalignment between the first electrode 120 and the vapor deposition layer is large, the misalignment between the first electrode 120 and the vapor deposition layer becomes more perceptible, and moiré patterns are more likely to occur. Therefore, in order to suppress differences in the amount of light emitted within the image and to suppress the occurrence of moiré patterns, it is necessary to reduce the difference in the thickness of the vapor deposition layer in the above-mentioned area.

[0108] The mask 20 of this embodiment is designed to reduce the difference in thickness of the vapor-deposited layer within the above-mentioned region. Specifically, the metal layer 40 has a section 48A surrounded by a defect 43 around the effective region 49. According to the findings of the present inventors, by having a section 48A surrounded by a defect 43 around the effective region 49 of the metal layer 40, the difference in thickness of the vapor-deposited material that passes through the multiple second openings 41 within the effective region 49 and adheres to the substrate 110 can be reduced. More specifically, it is possible to suppress the thickness of the vapor-deposited material that passes through the second openings 41 located near the outer edge of the effective region 49 and adheres to the substrate 110 from being greater than the thickness of the vapor-deposited material that passes through the second openings 41 located near the center of the effective region 49 and adheres to the substrate 110. In other words, it is possible to suppress the amount of vapor-deposited material that passes through the second openings 41 located near the outer edge of the effective region 49 from being greater than the amount of vapor-deposited material that passes through the second openings 41 located near the center of the effective region 49. This is thought to be due to the following reasons.

[0109] First, the reason why the thickness of the vapor-deposited layer near the outer edge of the above region is greater than the thickness of the vapor-deposited layer in the center of the above region is thought to be as follows: The vapor-deposited material 7 that flies from the vapor deposition source 6 to the mask 20 enters the first opening 31 from the first surface 301 side of the first layer 30. At this time, the vapor-deposited material 7 that flies to the inner region 36 or the outer region 35 wraps around those regions 36 and 35 and enters the first opening 31. As a result, the density of the vapor-deposited material 7 near the first wall surface 32 inside the first opening 31 is higher than the density of the vapor-deposited material 7 in the center of the first opening 31. As a result, the amount of vapor-deposited material 7 that passes through the second opening 41 located near the outer edge of the effective region 49 is greater than the amount of vapor-deposited material 7 that passes through the second opening 41 located near the center of the effective region 49. As a result, the thickness of the vapor-deposited layer near the outer edge of the above region is greater than the thickness of the vapor-deposited layer in the center of the above region.

[0110] Next, the presence of a compartment 48A surrounded by a defect 43 near the outer edge of the effective region 49 in the metal layer 40 can suppress the amount of deposition material 7 passing through the second opening 41 located near the outer edge of the effective region 49 for the following reasons. That is, the deposition material 7 has the planarity of a π-conjugated system. Therefore, the flow of the deposition material 7 corresponds to an electric current. As the deposition material 7 flows near the metal layer 40, a magnetic field is generated near the metal layer 40, and eddy currents are generated in the compartment 48A of the metal layer 40 to suppress the increase of this magnetic field. As eddy currents are generated in the compartment 48A of the metal layer 40, energy is lost in the deposition material 7 flowing near the compartment 48A within the first opening 31, and the flow of deposition material 7 near the compartment 48A is slowed down. That is, the flow of deposition material 7 toward the outer edge of the effective region 49 within the first opening 31 is slowed down. As a result, the amount of deposition material 7 passing through the second opening 41 located near the outer edge of the effective region 49 can be suppressed.

[0111] In the illustrated example, the defect 43 overlaps the intermediate layer 50 in a plan view. In this case, the end of the defect 43 on the third surface 401 side may be closed by the intermediate layer 50. By closing the defect 43, when forming a vapor deposition layer on the substrate 110 using the mask 20, it is prevented that the vapor deposition material from the vapor deposition source 6 passes through the defect 43 and adheres to the substrate 110.

[0112] Furthermore, the end of the defect portion 43 on the third surface 401 side may be closed by the first layer 30. In this case as well, when forming a vapor deposition layer on the substrate 110 using the mask 20, the vapor deposition material 7 from the vapor deposition source 6 is prevented from passing through the defect portion 43 and adhering to the substrate 110.

[0113] In the illustrated example, at least a portion of the missing portion 43 overlaps with the first layer 30 in a plan view. In particular, in the illustrated example, the entire missing portion 43 overlaps with the first layer 30. As can be seen from Figure 5B, the missing portion 43 may overlap with the inner region 36 of the first layer 30 in a plan view. As can be seen from Figure 4, the missing portion 43 may overlap with the outer region 35 of the first layer 30 in a plan view.

[0114] The dimensions of section 48A in plan view are not particularly limited. The dimensions of section 48A may be determined, for example, such that its maximum length S9 is greater than or equal to a predetermined value and less than or equal to a predetermined value. This allows for the effective generation of eddy currents in each section 48A. As a result, the amount of deposition material 7 passing through the second opening 41 located near the outer edge of the effective region 49 can be effectively suppressed. The maximum length S9 may be, for example, 100 mm or less, 50 mm or less, or 30 mm or less. The maximum length S9 may be, for example, 0.1 mm or more, 0.5 mm or more, or 1.0 mm or more.

[0115] In the example shown in Figure 4, the peripheral region 48 has multiple compartments 48A. Each compartment 48A may be adjacent to any of the effective regions 49. In a plan view, each effective region 49 may have multiple compartments 48A adjacent to it. The multiple compartments 48A may be arranged along the outer edge of the effective region 49. This effectively suppresses the amount of deposition material passing through the second opening 41 in a long region along the outer edge of the effective region 49.

[0116] In the example shown in Figure 4, in a plan view, the contour of the first opening 31 has a portion extending in a first direction D1 and a portion extending in a second direction D2. Each of the multiple compartments 48A adjacent to each effective area 49 includes, in a plan view, a compartment 48A1 adjacent to the portion extending in the first direction D1 and a compartment 48A2 adjacent to the portion extending in the second direction D2.

[0117] In the illustrated example, each effective region 49 is surrounded by multiple compartments 48A. The multiple compartments 48A are arranged circumferentially along the outer edge of the effective region 49. This effectively suppresses the amount of deposition material 7 passing through the second opening 41 in all areas along the outer edge of the effective region 49. In the example shown in Figure 5B, each effective region 49 is adjacent to four compartments 48A, but is not limited to this. Each effective region 49 may be adjacent to one or two compartments 48A, or to five or more compartments 48A.

[0118] In the example shown in Figure 5B, the missing portion 43 continuously surrounds the corresponding section 48A. In other words, the missing portion 43 extends continuously along the contour of the corresponding section 48A.

[0119] Each section 48A is surrounded by a defect 43. Therefore, within the metal layer 40, each section 48A is independent of the effective region 49. In other words, each section 48A is not directly connected to the effective region 49. Furthermore, within the metal layer 40, multiple sections 48A are independent of each other. In other words, each section 48A is not directly connected to other sections 48A. This allows for the effective generation of eddy currents in each section 48A.

[0120] In the example shown in Figure 5B, each section 48A overlaps with the first layer 30 and / or the intermediate layer 50. In the illustrated example, each section 48A is located outside the first opening 31 in a plan view. In the illustrated example, some of the sections 48A overlap with the region between adjacent first openings 31 of the first layer 30 (inner region 36). Other parts of the sections 48A overlap with the region between the outer edge 303 of the first layer 30 and the first opening 31 (outer region 35). Of course, at least some of the sections 48A may overlap with the first opening 31. In this case, at least some of the sections 48A may be arranged to straddle the first layer 30 and the first opening 31 in a plan view. In this case, the multiple sections 48A adjacent to each effective area 49 may include, in a plan view, sections 48A that overlap with the portion of the first wall surface 32 extending in a first direction D1, and sections 48A that overlap with the portion of the first wall surface 32 extending in a second direction D2.

[0121] Next, the low-conductivity layer 60 will be described. The low-conductivity layer 60 is provided to prevent conductive material from being unintentionally placed in the defects 43. The low-conductivity layer 60 is located in at least some of the defects 43. The low-conductivity layer 60 may be located in all of the defects 43. The low-conductivity layer 60 may be exposed on the side of the mask 20 facing the exit surface 202.

[0122] The low-conductivity layer 60 preferably contains a material with lower conductivity than the metal layer 40. In other words, the low-conductivity layer 60 preferably contains a material with higher insulating properties than the metal layer 40. This prevents conductive foreign matter from unintentionally being placed in the defect 43, which would cause the electrical resistance between adjacent regions on either side of the defect 43 to become too low. This allows eddy currents to be effectively generated in each section 48A. The low-conductivity layer 60 may contain, for example, silicon oxide, silicon nitride, or silicon oxynitride. Silicon nitride has the chemical formula Si x N y It may also be represented as: Silicon oxynitride has the chemical formula Si x O y N z It may also be represented as follows. The heat dissipation promoting layer 60 may be formed, for example, by a reduced-pressure chemical vapor deposition method or a plasma chemical vapor deposition method using silane SiH4 and / or nitrogen oxide N2O and / or ammonia NH3 and / or nitrogen N2 as raw materials.

[0123] The thickness of the low-conductivity layer 60 is preferably less than or equal to the thickness T2 of the metal layer 40. This suppresses the risk of a gap being formed between the fourth surface 402 of the metal layer 40 and the substrate 110 by the low-conductivity layer 60. This suppresses the occurrence of shadows during the deposition process. The thickness of the low-conductivity layer 60 is, for example, 25.0 μm or less, may be 10.0 μm or less, or 5.0 μm or less. The thickness of the low-conductivity layer 60 is, for example, 0.5 μm or more, may be 1.0 μm or more, or 2.0 μm or more.

[0124] Next, we will describe further measures to reduce the difference in thickness of the vapor-deposited layer within the above region. Specifically, we will describe the configuration of the first layer 30 of the mask 20 in this embodiment.

[0125] The first wall surface 32 has a tapered surface 32a. In the illustrated example, the tapered surface 32a is directly connected to the second surface 302. Furthermore, the tapered surface 32a approaches the center of the first opening 31 as it moves from the first surface 301 toward the second surface 302. The inclusion of the tapered surface 32a in the first wall surface 32 increases the area of ​​the first wall surface 32. Here, the vapor deposition material 7 decelerated by the eddy currents within the first opening 31 is more likely to adhere to the first wall surface 32. By increasing the area of ​​the first wall surface 32, the amount of vapor deposition material 7 adhering to the first wall surface 32 can be increased. This makes it possible to more effectively suppress the amount of vapor deposition material 7 passing through the second opening 41 located near the outer edge of the effective region 49.

[0126] In the examples shown in Figures 7A and 7B, the first direction wall surface 321 has a first direction tapered surface 321a. The second direction wall surface 322 has a second direction tapered surface 322a. Both the first direction tapered surface 321a and the second direction tapered surface 322a approach the center of the first opening 31 as you move from the first surface 301 towards the second surface 302. The first direction taper width S10 of the first direction tapered surface 321a and the second direction taper width S11 of the second direction tapered surface 322a are different from each other. The first direction taper width S10 is the dimension of the first direction tapered surface 321a measured in a direction perpendicular to the first direction D1. In the illustrated example, the first direction taper width S10 is the dimension of the first direction tapered surface 321a measured in the second direction D2. The second direction taper width S11 is the dimension of the second direction tapered surface 322a measured in a direction perpendicular to the second direction D2. In the illustrated example, the second direction taper width S11 is the dimension of the second direction tapered surface 322a measured in the first direction D1.

[0127] Because the taper width S10 in the first direction and the taper width S11 in the second direction are different, the amount of deposition material 7 adhering per unit length along the first direction D1 of the first direction wall surface 321 is different from the amount of deposition material 7 adhering per unit length along the second direction D2 of the second direction wall surface 322. As a result, the density of the deposition material 7 decreases near the wall surface 321 or 322 where the amount of deposition material 7 adhering per unit length is high. Then, the deposition material 7 near the wall surface 322 or 321 where the amount of deposition material 7 adhering per unit length is low flows towards the wall surface 321 or 322 where the amount of deposition material 7 adhering per unit length is high. As a result, a flow of deposition material 7 along the circumferential direction of the first wall surface 32 is created, and the risk of deposition material 7 accumulating near a part of the first wall surface 32 is suppressed. This makes it possible to suppress variations in the amount of deposition material 7 passing through the second opening 41 located near the outer edge of the effective region 49.

[0128] (Method for manufacturing vapor-deposited masks) Next, a method for manufacturing the mask 20 according to this embodiment will be described with reference to Figures 8 to 19. First, a first layer 30 is prepared. A silicon wafer may be used as the first layer 30. The first surface 301 and the second surface 302 of the first layer 30 may be polished to a mirror finish. The arithmetic mean roughness Ra of the first surface 301 and the second surface 302 may be 1.5 nm or less, or 1.0 nm or less. The surface orientations of the first surface 301 and the second surface 302 may be (100) and (110), etc.

[0129] As shown in Figure 8, the second surface 302 of the first layer 30 includes a first region 305 and a second region 306. The first region 305 is the region corresponding to the first opening 31 described above. The second region 306 is the region corresponding to the outer region 35 and the inner region 36 described above. The second region 306 surrounds the first region 305.

[0130] Next, an intermediate layer formation process is carried out to form an intermediate layer 50 on the second surface 302 of the first layer 30. As a result, a laminate 59 including the first layer 30 and the intermediate layer 50 is produced, as shown in Figure 9. Specifically, a stopper layer 51, an adhesion layer 53, and a seed layer 52 are laminated on the second surface 302 in this order. The stopper layer 51 may be formed by a vacuum deposition method such as sputtering. The adhesion layer 53 may be formed by a sol-gel method, sputtering, or vacuum deposition. The seed layer 52 may be formed by an electroless plating method, sputtering, vacuum deposition, or ion plating.

[0131] As shown in Figure 9, the sixth surface 502 of the seed layer 52 includes a third region 525 and a fourth region 526. The third region 525 corresponds to the effective region 49 of the metal layer 40 described above. The fourth region 526 corresponds to the peripheral region 48 of the metal layer 40 described above. The fourth region 526 surrounds the third region 525. The dimensions of the third region 525 and the fourth region 526 may be the same as the dimensions of the effective region 49 and the peripheral region 48, respectively.

[0132] The intermediate layer 50 is formed to cover at least the first region 305. The intermediate layer 50 may also cover the second region 306. For example, the intermediate layer 50 may be formed over the entire second surface 302.

[0133] Next, as shown in Figure 10, a resist pattern formation process is carried out to form a plurality of first resist protrusions 70 and a plurality of second resist protrusions 75 on the sixth surface 502 of the seed layer 52. As a result, a plurality of resist protrusions 70 and 75 protruding from the sixth surface 502 are formed in the third region 525 and the fourth region 526. The plurality of first resist protrusions 70 are formed on the third region 525 corresponding to the second opening 41. The plurality of second resist protrusions 75 are formed on the fourth region 526 corresponding to the defect 43.

[0134] The resist protrusions 70 and 75 are, for example, photoresist. The photoresist is a positive-type resist. Examples of positive-type resists include iP5700, PMER-P-LA900PM, and PMER-P7100 from Tokyo Ohka Kogyo Co., Ltd., and NPR9700 from Nagase ChemteX.

[0135] The height T3 of the resist protrusions 70, 75 is defined as the distance between the top of the resist protrusion 70 and the sixth surface 502. The height T3 is greater than the thickness T2 of the metal layer 40. The height T3 is, for example, 1.0 μm or more, may be 2.0 μm or more, or 4.0 μm or more. The height T3 is, for example, 30.0 μm or less, may be 20.0 μm or less, or 10.0 μm or less.

[0136] The first resist protrusion 70 has a three-dimensional shape corresponding to the three-dimensional shape of the second opening 41. The side surface 71 of the first resist protrusion 70 has a shape corresponding to the second wall surface 42 of the second opening 41. In the illustrated example, the second opening 41 is a frustum pyramidal shape overall. Correspondingly, the first resist protrusion 70 may be a frustum pyramidal shape overall. If the second opening 41 is a frustum pyramidal shape overall, the first resist protrusion 70 may also be a frustum pyramidal shape overall. Furthermore, if the second opening 41 is a prismatic or cylindrical shape overall, the first resist protrusion 70 may also be a prismatic or cylindrical shape overall.

[0137] The second resist protrusion 75 has a three-dimensional shape corresponding to the three-dimensional shape of the defect 43. The side surface 76 of the second resist protrusion 75 has a shape corresponding to the third wall surface 44 of the defect 43. In the illustrated example, the defect 43 is grid-like overall. Correspondingly, the second resist protrusion 75 may also be grid-like overall.

[0138] The resist pattern formation process includes, for example, a first resist layer formation process, an exposure process, and a development process.

[0139] The first resist layer forming step is a step of forming a first resist layer on the sixth surface 502. The first resist layer forming step includes, for example, a step of applying a liquid resist to the sixth surface 502. The first resist layer forming step may include a step of heating the liquid resist on the sixth surface 502. The first resist layer is formed by drying the liquid resist.

[0140] In the exposure step, light is irradiated onto the first resist layer such that in a subsequent development step, the first resist layer remains at portions corresponding to the second openings 41 and the defective portions 43 in the third region 525 and the fourth region 526, and the first resist layer at other portions on the sixth surface 502 is removed. Specifically, since the first resist layer is a positive resist, light is irradiated onto the first resist layer at the other portions on the sixth surface 502. The light is, for example, i-line. The i-line is a spectral line of mercury having a wavelength of 365 nm.

[0141] In the exposure step, parameters such as the exposure amount and the focus position may be adjusted. The exposure amount is, for example, 150 mJ / cm 2 or more, and may be 175 mJ / cm 2 or more, and may be 200 mJ / cm 2 or more. The exposure amount is, for example, 300 mJ / cm 2 or less, and may be 350 mJ / cm 2 or less, and may be 400 mJ / cm 2The following may also apply: The focal point may be the eighth surface 522 of the seed layer 52, or it may be offset from the eighth surface 522. For example, the focal point may be a position displaced by SHμm from the eighth surface 522 toward the seventh surface 521. The displacement amount SH may be, for example, 1μm or more, 2μm or more, or 3μm or more. The displacement amount SH may be, for example, 6μm or less, 8μm or less, or 10μm or less. By adjusting these parameters, the dimensions and three-dimensional shape of the resist protrusions 70,75 can be controlled. By controlling the dimensions and three-dimensional shape of the resist protrusions 70,75, the dimensions and three-dimensional shape of the second opening 41 and the defect 43 can be controlled. In particular, the angle θ1 of the tapered surface 42a of the second opening 41 can be controlled.

[0142] After the exposure process, the first resist layer is developed to obtain a plurality of resist protrusions 70, 75 in the third region 525 and the fourth region 526. The developer contains, for example, TMAH (tetramethylammonium hydroxide).

[0143] Next, a metal layer formation process is carried out to form a metal layer 40 on the sixth surface 502. The metal layer formation process may include a plating process. That is, the metal layer 40 may be formed by a plating process. The plating process may be an electrolytic plating process or an electroless plating process. When an electrolytic plating process is carried out, the intermediate layer 50 includes a seed layer 52.

[0144] In the plating process, a plating solution containing ions of the metal that constitutes the metal layer 40 is supplied onto the sixth surface 502. As a result, the metal layer 40 is formed on the sixth surface 502, as shown in Figure 11. When forming the metal layer 40 by electroplating, a plating power supply is connected to the seed layer 52, and the laminate 59 is immersed in a plating bath containing the plating solution. As a result, metal is deposited in the gaps between the resist protrusions 70 and 75 on the sixth surface 502, and the metal layer 40 is formed.

[0145] The metal layer 40 has a second opening 41 and a defect 43 formed in it, corresponding to a plurality of resist protrusions 70 and 75. The shape and dimensions of the second opening 41 and the defect 43 correspond to the shape and dimensions of the side surfaces 71 and 76 of the corresponding resist protrusions 70 and 75.

[0146] The thickness T2 of the metal layer 40 can be controlled by the current value from the plating power supply, the energizing time with the plating power supply, the immersion time in the plating solution, etc.

[0147] The metal layer formation process may include an annealing process in which the metal layer 40 is heated. This reduces the strain that has occurred inside the metal layer 40. In the annealing process, the first layer 30, the intermediate layer 50, and the metal layer 40 are kept in an environment at a temperature higher than room temperature. The temperature of the annealing process is, for example, 120°C or higher, but may also be 140°C or higher, or 150°C or higher. The temperature of the annealing process is, for example, 250°C or lower, but may also be 220°C or lower, or 200°C or lower.

[0148] Next, a first resist protrusion removal step is performed to remove the first resist protrusion 70, and a second resist protrusion removal step is performed to remove the second resist protrusion 75. As shown in Figure 12, the first resist protrusion removal step removes the first resist protrusion 70 from the second opening 41 of the metal layer 40. Also, as shown in Figure 12, the second resist protrusion removal step removes the second resist protrusion 75 from the defect 43 of the metal layer 40. In the first and second resist protrusion removal steps, the resist protrusions 70 and 75 may be removed by, for example, exposing and developing them. The developer contains, for example, TMAH (tetramethylammonium hydroxide). Alternatively, the resist protrusions 70 and 75 may be removed by bringing a resist treatment solution into contact with them. The resist treatment solution contains, for example, N-methyl-2-pyrrolidone. The first and second resist protrusion removal steps may be performed simultaneously.

[0149] Next, a low-conductivity layer formation step is performed to form a low-conductivity layer 60 on the intermediate layer 50 and the metal layer 40. As a result, the low-conductivity layer 60 is placed in the second opening 41 and the defect 43, as shown in Figure 13. The low-conductivity layer 60 may be formed to cover the fourth surface 402 of the metal layer 40. In this case, the low-conductivity layer 60 can be used as a protective layer to protect the metal layer 40 from etchants that etch the first layer 30.

[0150] The low-conductivity layer 60 may be formed by chemical vapor deposition. The low-conductivity layer 60 may also be formed by low-pressure chemical vapor deposition (CVD) or plasma-enhanced chemical vapor deposition (CVD). For example, silicon dioxide (SiO₂) x The low-conductivity layer 60 containing silicon nitride may be formed, for example, by a vacuum chemical vapor deposition method or a plasma chemical vapor deposition method using tetraethyl orthosilicate Si(OC2H5)4 (also called "TEOS (tetraethoxysilane)") as a raw material, or by a plasma chemical vapor deposition method using silane SiH4 and nitrogen oxide N2O as raw materials. x N y The low-conductivity layer 60 containing the material may be formed, for example, by a reduced-pressure chemical vapor deposition method or a plasma chemical vapor deposition method using silane SiH4 and / or nitrogen oxide N2O and / or ammonia NH3 as raw materials.

[0151] Next, a first layer processing step is performed to form the first opening 31 in the first layer 30. In the first layer processing step, as shown in Figure 14, a second resist layer 80 may be partially formed on the first surface 301 of the first layer 30. A resist opening 81 opposite to the first opening 31 is formed in the second resist layer 80. In a plan view, the resist opening 81 overlaps with the first region 305.

[0152] The second resist layer 80 may be, for example, a photoresist. In this case, first, the second resist layer 80 is formed on the first surface 301 by coating it with a liquid resist material. After coating, a step of heating the second resist layer 80 may be performed. Subsequently, a photolithography process is performed to expose and develop the second resist layer 80. This allows resist openings 81 to be formed in the second resist layer 80.

[0153] Although not shown in the diagram, the second resist layer 80 may be a silicon oxide film partially formed on the first surface 301. The silicon oxide film is formed, for example, by partially performing a thermal oxidation treatment on the first surface 301. The silicon oxide film may be formed on the first layer 30 before the intermediate layer 50, the metal layer 40, and the low conductivity layer 60 are laminated onto the first layer 30.

[0154] Next, in the first layer processing step, as shown in Figure 15, the first layer 30 is etched from the first surface 301 side to form the first opening 31 in the first layer 30. The etching may be dry etching using an etching gas. Since the stopper layer 51 has resistance to the etchant, as shown in Figure 15, it is possible to suppress the etching from progressing to the metal layer 40. The etching gas is, for example, SF6 gas.

[0155] The first layer machining process may be controlled to obtain a desired first-direction taper width S10 and a desired second-direction taper width S11. For example, the etching gas conditions may be controlled. These conditions include the type of etching gas, temperature, and pressure.

[0156] The first opening 31 of the first layer 30 may be formed by methods other than dry etching. For example, methods such as wet etching and polishing may be employed. A combination of multiple methods may be employed. By employing one or more suitable methods and controlling the conditions of the employed methods, a desired first direction taper width S10 and a desired second direction taper width S11 can be obtained.

[0157] Next, a low-conductivity layer thickness reduction process is carried out to remove the low-conductivity layer 60 on the fourth surface 402 of the metal layer 40. As a result, as shown in Figure 16, the thickness of the low-conductivity layer 60 can be reduced to less than or equal to the thickness T2 of the metal layer 40. Methods for removing the low-conductivity layer 60 on the fourth surface 402 include mechanical polishing, chemical mechanical polishing, wet etching, dry etching, and combinations thereof.

[0158] Next, a low-conductivity layer removal step is performed to remove the low-conductivity layer 60 within the second opening 41. In the low-conductivity layer removal step, as shown in Figure 17, a first protective layer 83 may be partially formed on the fourth surface 402 of the metal layer 40 and on the low-conductivity layer 60. An opening 84 is formed in the first protective layer 83. The opening 84 corresponds to the effective region 49. In a plan view, the opening 84 overlaps with the third region 525.

[0159] The first protective layer 83 has resistance to etching solutions used to remove the low-conductivity layer 60. For example, if the etching solution contains buffered hydrofluoric acid, the first protective layer 83 contains a resin that is resistant to hydrofluoric acid. For example, the first protective layer 83 contains a photoresist that is resistant to hydrofluoric acid. The photoresist may contain polyimide or the like. The buffered hydrofluoric acid solution is a solution containing hydrofluoric acid and ammonium fluoride.

[0160] Next, in the low-conductivity layer removal process, an etching solution such as buffered hydrofluoric acid solution is supplied toward the opening 84. As a result, as shown in Figure 18, the low-conductivity layer 60 that overlaps with the opening 84 in a plan view is removed. Therefore, the low-conductivity layer 60 is removed from the second opening 41.

[0161] Next, an intermediate layer removal process is carried out to remove the third region 525 of the intermediate layer 50. In the intermediate layer removal process, as shown in Figure 18, a second protective layer 85 may be partially formed on the fifth surface 501 of the intermediate layer 50. An opening 86 is formed in the second protective layer 85. The opening 86 corresponds to the effective region 49. In a plan view, the opening 86 overlaps with the third region 525.

[0162] Next, in the intermediate layer removal process, an etchant for the intermediate layer 50 is supplied to the opening 86. As a result, as shown in Figure 19, the intermediate layer 50 that overlaps with the opening 86 in a plan view is removed. The removal of the intermediate layer 50 may be carried out by dry etching using a fluorine-based gas or the like, or by wet etching using an acidic etching solution.

[0163] A first opening 31 is formed in the first layer 30, and the third region 525 of the intermediate layer 50 is removed, thereby opening the end of the second opening 41 formed in the effective region 49 on the third surface 401 side. On the other hand, the end of the defect 43 formed in the peripheral region 48 on the third surface 401 side remains closed by the intermediate layer 50 and / or the first layer 30.

[0164] As shown in Figure 19, after the intermediate layer removal process, a second resist layer removal process is performed to remove the second resist layer 80, a first protective layer removal process is performed to remove the first protective layer 83, and a second protective layer removal process is performed to remove the second protective layer 85. The order of the second resist layer removal process, the first protective layer removal process, and the second protective layer removal process is not particularly limited. Two or three of the second resist layer removal process, the first protective layer removal process, and the second protective layer removal process may be performed simultaneously. The second resist layer removal process and the first protective layer removal process may be performed before the intermediate layer removal process.

[0165] If the second resist layer 80 is a photoresist, a second resist treatment solution containing N-methyl-2-pyrrolidone may be supplied to the second resist layer 80. The second resist layer 80 may be removed by irradiating it with oxygen plasma. If the second resist layer 80 is a silicon oxide film, a resist treatment solution containing hydrofluoric acid may be supplied to the second resist layer 80. The second resist layer 80 may be removed by dry etching using CF4 gas or the like.

[0166] Next, we will describe an example of a method for manufacturing an organic device 100 using a mask 20.

[0167] First, a substrate 110 on which the first electrode 120 is formed is prepared. The substrate 110 may be a silicon wafer. The first electrode 120 may be formed, for example, by forming a conductive layer constituting the first electrode 120 on the substrate 110 by a vacuum deposition method, and then patterning the conductive layer by a photolithography method. The patterning of the conductive layer may be performed using equipment that performs semiconductor manufacturing processes. An insulating layer 160 located between two adjacent first electrodes 120 may be formed on the substrate 110.

[0168] Next, an organic layer 130, including a first organic layer 130A and a second organic layer 130B, is formed on the first electrode 120. For example, first, the first organic layer 130A is formed by a vapor deposition method using a first mask 20. The first mask 20 has a second opening 41 corresponding to the first organic layer 130A. Next, the second organic layer 130B is formed by a vapor deposition method using a second mask 20. The second mask 20 has a second opening 41 corresponding to the second organic layer 130B. Next, the third organic layer is formed by a vapor deposition method using a third mask 20. The third mask 20 has a second opening 41 corresponding to the third organic layer.

[0169] Next, a second electrode 140 is formed on the organic layer 130. For example, as shown in Figure 1, the second electrode 140 may be formed over the entire first surface 111 by a vacuum deposition method. Alternatively, although not shown, the second electrode 140 may be formed by a deposition method using a mask 20, similar to the organic layer 130. After that, a sealing layer or the like (not shown) may be formed on the second electrode 140. In this way, the organic device 100 can be obtained.

[0170] Multiple organic devices 100 may be formed on a single substrate 110. Each organic device 100 may correspond to one of the first openings 31 of the mask 20. In this case, a cutting step of the substrate 110 may be performed. For example, the substrate 110 may be cut along a region of the substrate 110 that corresponds to the inner region 36 of the mask 20. This makes it possible to obtain multiple organic devices 100.

[0171] The effects of the mask 20 when forming the organic layer 130, the second electrode 140, etc. by a vapor deposition method using the mask 20 will be explained.

[0172] Because the metal layer 40 has a section 48A surrounded by a defect 43 around the effective region 49, the difference between the amount of deposition material 7 passing through the second opening 41 located near the center of the effective region 49 and the amount of deposition material 7 passing through the second opening 41 located near the outer edge of the effective region 49 can be reduced. As a result, the difference in thickness of the deposition material 7 that passes through multiple second openings 41 within the effective region 49 and adheres to the substrate 110 can be reduced.

[0173] Furthermore, because the low-conductivity layer 60 is placed within the defective portion 43, the risk of foreign matter being placed within the defective portion 43 and unintentionally lowering the electrical resistance between the area 48A surrounded by the defective portion 43 and other areas of the metal layer 40 is suppressed.

[0174] Furthermore, since the first wall surface 32 defining the first opening 31 has a tapered surface 32a, the area of ​​the first wall surface 32 can be increased, and the amount of vapor deposition material 7 adhering to the first wall surface 32 can be increased. This makes it possible to reduce the difference between the amount of vapor deposition material 7 passing through the second opening 41 located near the center of the effective region 49 and the amount of vapor deposition material 7 passing through the second opening 41 located near the outer edge of the effective region 49.

[0175] Furthermore, because the taper width S10 of the first direction wall surface 321 and the taper width S11 of the second direction wall surface 322 are different, a flow of the deposition material 7 is generated along the circumferential direction of the first wall surface 32, suppressing the risk of the deposition material 7 accumulating near a part of the first wall surface 32. This makes it possible to suppress variations in the amount of deposition material 7 passing through the second opening 41 located near the outer edge of the effective region 49.

[0176] The above-described embodiment can be modified in various ways. Modifications will be described with reference to the drawings as needed. In the following description and the drawings used therein, parts that can be configured similarly to the above-described embodiment will be given the same reference numerals as those used for the corresponding parts in the above-described embodiment. Duplicate explanations will be omitted. Furthermore, if it is clear that the effects and advantages obtained in the above-described embodiment can also be obtained in the modification, that explanation may be omitted.

[0177] (First variation) In the example described above, each section 48A of the peripheral region 48 of the metal layer 40 is surrounded by a defect 43, but is not limited to this. As shown in Figure 20A, each section 48A of the peripheral region 48 may be surrounded by a recess 45 that slopes inward from the fourth surface 402 toward the third surface 401. The metal layer 40 may remain between the bottom surface 451 of the recess 45 and the third surface 401. In other words, the above sections 48A of the peripheral region 48 of the metal layer 40 may be directly connected to an adjacent effective region 49 or section 48A. In this case as well, if the thickness of the portion 40a between the bottom surface 451 of the recess 45 and the third surface 401 is sufficiently small, the electrical resistance between adjacent regions across the recess 45 can be sufficiently high, and eddy currents can be effectively generated in each section 48A. The thickness of portion 40a is, for example, half or less of the thickness of the section 48A surrounded by the recess 45, and may also be one-third or one-quarter or less. The thickness of portion 40a is, for example, 10 μm or less, and may also be 5.0 μm or less, and may also be 1.0 μm or less.

[0178] The portion 40a of the metal layer 40 may be formed, for example, by a plating method. In this case, as shown in Figure 20B, the metal layer 40 may include a first metal layer 411 and a second metal layer 412. The first metal layer 411 and the second metal layer 412 may contain the same metal material or different metal materials.

[0179] A method for forming a metal layer 40 in which a recess 45 is formed in the peripheral region 48 will be described with reference to Figures 21 to 23.

[0180] After the resist pattern formation process shown in Figure 10, a first metal layer formation process is carried out to form a first metal layer 411 on the sixth surface 502 of the intermediate layer 50. The first metal layer formation process may include a plating process. That is, the first metal layer 411 may be formed by a plating process. The thickness T4 of the first metal layer 411 may be less than the thickness T2 of the metal layer 40. The thickness T4 may be, for example, 0.3 μm or more, 0.7 μm or more, or 1.5 μm or more. The thickness T4 may be, for example, 15 μm or less, 7 μm or less, or 3 μm or less. The first metal layer 411 has openings 41a corresponding to the first resist protrusions 70 and openings 45a corresponding to the second resist protrusions 75.

[0181] Next, a second resist protrusion removal step is performed to remove the second resist protrusion 75 formed in the fourth region 526. As a result, the second resist protrusion 75 is removed from the opening 45a, as shown in Figure 21.

[0182] Next, a second metal layer formation step is performed in which a second metal layer 412 is formed on the first metal layer 411 and on the intermediate layer 50 within the opening 45a. The second metal layer formation step may include a plating step. That is, the second metal layer 412 may be formed by a plating step.

[0183] A metal layer 40 is formed by the first metal layer 411 and the second metal layer 412. The second metal layer formation step may be carried out in the same manner as the first metal layer formation step. The plating solution used to form the second metal layer 412 may be the same as the plating solution used to form the first metal layer 411, or it may be different.

[0184] In the second metal layer formation process, as shown in Figures 22A and 22B, the first resist protrusions 70 are arranged in the third region 525. As a result, multiple openings 41b corresponding to the multiple first resist protrusions 70 are formed in the region of the second metal layer 412 facing the third region 525. The opening 41a of the first metal layer 411 and the opening 41b of the second metal layer 412 form the second opening 41 of the metal layer 40.

[0185] In the second metal layer formation step, the second resist protrusion 75 is not positioned in the fourth region 526. As a result, in the region of the second metal layer 412 facing the fourth region 526, the second metal layer 412 is also formed within the opening 45a of the first metal layer 411. As a result, within the opening 45a, the second metal layer 412 (i.e., the portion 40a described above) is formed on the intermediate layer 50, and the end of the opening 45a on the third surface 401 side is closed by the second metal layer 412, forming a recess 45. The bottom surface 451 of the recess 45 is formed by the second metal layer 412.

[0186] As shown in Figure 22B, the second metal layer 412 may cover the first metal layer 411 in the third region 525. The thickness T5 of the second metal layer 412 may be smaller than the thickness T4 of the first metal layer. Furthermore, the thickness T5 is determined such that the sum of the thickness T5 and the thickness T4 of the first metal layer (i.e., the thickness T2 of the metal layer) is smaller than the height T3 of the resist protrusions 70, 75. As described above, the thickness T5 is, for example, 0.2 μm or more, may be 0.3 μm or more, or 0.5 μm or more. The thickness T5 is, for example, 10 μm or less, may be 3.0 μm or less, or 2.0 μm or less. By having a thickness T5 of 0.3 μm or more, it is possible to suppress the occurrence of defects such as pinholes and deformations in the metal layer 40. Furthermore, by having a thickness T5 of 10 μm or less, it is possible to suppress the non-uniformity of the thickness T5 of the second metal layer 412 in the third region 525. As a result, it is possible to suppress unevenness in the thickness T2 of the metal layer 40 in the effective region 49, and to suppress unevenness in the dimensions of the second opening 41.

[0187] A second metal layer 412 may also be formed on the wall surface of the opening 45a. In this case, the dimension S10 of the recess 45 in plan view may be smaller than the dimension of the opening 45a of the first metal layer 411.

[0188] Next, a first resist protrusion removal step is performed to remove the first resist protrusion 70 formed in the third region 525. As a result, the first resist protrusion 70 is removed from the second opening 41, as shown in Figure 23.

[0189] As described above, a metal layer 40 is formed having an effective region 49 in which the second opening 41 is formed, and a peripheral region 48 in which the recess 45 is formed.

[0190] (Second variation) The method for forming the metal layer 40 with recesses 45 in the peripheral region 48 is not limited to the method shown in Figures 21 to 23. Other methods for forming the metal layer 40 with recesses 45 in the peripheral region 48 will be described with reference to Figures 24 to 27.

[0191] After the intermediate layer formation process shown in Figure 9, a first resist pattern formation process is carried out in which the first resist protrusions 70 are formed on the third region 525 of the intermediate layer 50.

[0192] Next, as shown in Figure 24, a third metal layer formation step is performed to form a third metal layer 413 on the sixth surface 502 of the intermediate layer 50. The third metal layer formation step may include a plating step. That is, the third metal layer may be formed by a plating step. The thickness of the third metal layer 413 may be less than the thickness T2 of the metal layer 40. The range of the thickness of the third metal layer 413 may be the same as the range of the thickness of the second metal layer 412 described above. An opening 41c corresponding to the first resist protrusion 70 is formed in the third metal layer 413.

[0193] Next, as shown in Figure 25, a second resist pattern formation step is performed in which a second resist protrusion 75 is formed on the region overlapping with the fourth region 526 of the third metal layer 413.

[0194] Next, as shown in Figure 26A, a fourth metal layer formation step is performed to form a fourth metal layer 414 on the third metal layer 413. The fourth metal layer formation step may include a plating step. That is, the fourth metal layer may be formed by a plating step. The thickness range of the fourth metal layer 414 may be the same as the thickness range of the first metal layer 411 described above. As shown in Figure 26B, the fourth metal layer 414 has an opening 41d corresponding to the first resist protrusion 70 and an opening 45b corresponding to the second resist protrusion 75.

[0195] A metal layer 40 is formed by the third metal layer 413 and the fourth metal layer 414. The plating process for forming the fourth metal layer 414 may be carried out in the same manner as the plating process for forming the third metal layer 413. The plating solution used for forming the fourth metal layer 414 may be the same as or different from the plating solution used for forming the third metal layer 413.

[0196] As shown in Figure 26B, the opening 41c of the third metal layer 413 and the opening 41d of the fourth metal layer 414 form the second opening 41 of the metal layer 40. In addition, the end of the opening 45b corresponding to the second resist protrusion 75 is closed by the third metal layer 413. In this example, the third metal layer 413 forms the portion 40a described above. Therefore, the third metal layer 413 forms the bottom surface 451 of the recess 45. Furthermore, the recess 45 is defined by the bottom surface 451 and the wall surface of the opening 45b.

[0197] Next, a first resist protrusion removal step is performed to remove the first resist protrusion 70 formed in the third region 525, and a second resist protrusion removal step is performed to remove the second resist protrusion 75 formed on the third metal layer 413. As a result, as shown in Figure 27, the first resist protrusion 70 is removed from the second opening 41 and the second resist protrusion 75 is removed from the recess 45.

[0198] As described above, a metal layer 40 is formed having an effective region 49 in which the second opening 41 is formed, and a peripheral region 48 in which the recess 45 is formed.

[0199] (Third variation) Furthermore, in the example described above, the low-conductivity layer 60 is formed after the metal layer 40, but this is not the only method. Referring to Figures 28 to 32, a method for forming the low-conductivity layer 60 before forming the metal layer 40 will be described.

[0200] Following the intermediate layer formation process shown in Figure 9, a low-conductivity layer formation process is carried out to form a low-conductivity layer 60 on the intermediate layer 50. As shown in Figure 28, the low-conductivity layer 60 may be formed to cover the third region 525 and the fourth region 526 of the intermediate layer 50. For example, the low-conductivity layer 60 may be formed over the entire sixth surface 502. The low-conductivity layer 60 may be formed by chemical vapor deposition as described above. The thickness of the low-conductivity layer 60 may be greater than or equal to the thickness T2 of the metal layer 40.

[0201] Next, a low-conductivity layer processing step is performed to form a plurality of first protrusions 61 and a plurality of second protrusions 65 on the low-conductivity layer 60. As a result, as shown in Figure 29, a plurality of protrusions 61 and 65 protruding from the sixth surface 502 are formed in the third region 525 and the fourth region 526. The plurality of first protrusions 61 are formed on the third region 525 corresponding to the second opening 41. The plurality of second protrusions 65 are formed on the fourth region 526 corresponding to the defect 43. The three-dimensional shape of the first protrusions 61 may be the same as the three-dimensional shape of the first resist protrusion 70 described above. The three-dimensional shape of the second protrusions 65 may be the same as the three-dimensional shape of the second resist protrusion 75 described above. The height of the protrusions 61 and 65 may be greater than or equal to the thickness T2 of the metal layer 40.

[0202] The method for processing the low-conductivity layer 60 to form the protrusions 61 and 65 is not particularly limited. For example, the low-conductivity layer 60 may be processed by dry etching using an etching gas. Dry etching may also be reactive ion etching.

[0203] Next, a metal layer formation process is carried out to form a metal layer 40 on the intermediate layer 50. The metal layer formation process may include a plating process. That is, the metal layer 40 may be formed by a plating process. As shown in Figure 30, the metal layer 40 has a second opening 41 corresponding to the first protrusion 61 and a defect 43 corresponding to the second protrusion 65.

[0204] Next, a first protrusion removal step is performed to remove the first protrusion 61. In the first protrusion removal step, a first protective layer 83 covering the second protrusion 65 may be formed, as shown in Figure 31.

[0205] Next, in the first protrusion removal step, an etching solution such as buffered hydrofluoric acid solution is supplied toward the opening 84 of the first protective layer 83. This removes the first protrusion 61 that overlaps with the opening 84 in a plan view. In other words, the low-conductivity layer 60 is removed from the second opening 41. The second protrusion 65 remains on the intermediate layer 50. In other words, the low-conductivity layer 60 within the defect 43 remains on the intermediate layer 50.

[0206] After the first protrusion 61 is removed, a step of removing the first protective layer 83 may be performed. Alternatively, before forming the first protective layer 83 or after removing the first protective layer 83, a step of reducing the thickness of the low-conductivity layer 60 to be less than or equal to the thickness T2 of the metal layer 40 may be performed.

[0207] In this manner, the low-conductivity layer 60 can be placed within the defective portion 43.

[0208] (Fourth variation) For example, after forming the metal layer 40, a metal layer planarization step may be performed to planarize the fourth surface 402 of the metal layer 40. By planarizing the fourth surface 402 of the metal layer 40, it is possible to suppress the formation of gaps between the metal layer 40 and the components on the substrate 110. This also contributes to the suppression of shadows. Methods for planarizing the fourth surface 402 of the metal layer 40 include mechanical polishing, chemical mechanical polishing, wet etching, dry etching, and combinations thereof. The metal layer planarization step may be performed simultaneously with the low-conductivity layer thickness reduction step.

[0209] (Fifth variation) For example, in the above example, the metal layer 40 is formed by a plating process, but it is not limited to this. The metal layer 40 may also be formed by a physical deposition method or a printing method. Physical deposition methods include sputtering, vapor deposition, and ion plating. With physical deposition methods or printing methods, the flatness of the fourth surface 402 of the metal layer 40 can be improved compared to the case of plating. Therefore, the load on the metal layer planarization process can be reduced. For example, the time required for the metal layer planarization process can be reduced.

[0210] (Sixth variation) For example, the intermediate layer 50 does not have to have a stopper layer 51 and an adhesion layer 53. In this case, the seed layer 52 may be in contact with the second surface 302 of the first layer 30.

[0211] (Seventh variation) For example, in the above example, the mask 20 includes the intermediate layer 50, but is not limited to this. The mask 20 does not have to include the intermediate layer 50. In this case, the metal layer 40 may be in contact with the second surface 302 of the first layer 30. Also in this case, one end of the defect 43 of the metal layer 40 may be closed by the first layer 30.

[0212] (Variation 8) For example, in the example described above, the fourth wall surface 55 of the intermediate layer 50 defines the boundary between the effective area 49 and the peripheral area 48, but this is not limited to this. The first wall surface 32 of the first layer 30 may define the boundary between the effective area 49 and the peripheral area 48. In this case, the fourth wall surface 55 of the intermediate layer 50 and the first wall surface 32 of the first layer 30 may overlap in a plan view. Alternatively, in this case, the mask 20 may not include the intermediate layer 50.

[0213] (9th variation) For example, in the above example, the defects 43 or recesses 45 continuously surround each section 48A, but are not limited to this. As shown in Figure 33, the metal layer 40 may have defects 43 or recesses 45 that discontinuously surround each section 48A. In other words, each section 48A may be surrounded by multiple defects 43 or recesses 45. In this case, the multiple defects 43 or recesses 45 may extend along different parts of the contour of each section 48A. In this case, if the distance S12 between adjacent ends of adjacent defects 43 or recesses 45 along the contour is sufficiently small, the electrical resistance between adjacent regions across the contour can be made sufficiently high, and eddy currents can be effectively generated in each section 48A. The spacing S12 between adjacent ends of adjacent defects 43 or recesses 45 is, for example, one-tenth or less of the length of the contour of the section 48A surrounded by the defects 43 or recesses 45, and may also be one-twentieth or less, or one-thirtieth or less. The spacing S12 is, for example, 500 μm or less, and may also be 50 μm or less, or 5 μm or less.

[0214] (Tenth variation) For example, in the above example, the planar shape of the section 48A enclosed by the missing portion 43 or recess 45 is a rectangle, but it is not limited to this. As shown in Figures 34 to 38, the planar shape of the section 48A enclosed by the missing portion 43 or recess 45 can be any shape. For example, the planar shape of section 48A may be a polygon other than a rectangle, such as a triangle or a hexagon, or a shape other than a polygon, such as a circle. Also, as shown in Figures 34 to 38, the planar shape of the missing portion 43 or recess 45 can also be any shape. For example, the planar shape of the missing portion 43 or recess 45 may be a curved shape such as a circle or a wavy line, or a broken line shape such as the outline of a polygon or a zigzag line.

[0215] (11th variation) For example, in the above example, the mask 20 includes the low-conductivity layer 60, but is not limited to this. The mask 20 does not have to include the low-conductivity layer 60. In other words, the low-conductivity layer 60 does not have to be placed in the defect 43 or recess 45 of the metal layer 40.

[0216] (12th variation) For example, in the above example, the tapered surface 32a of the first wall surface 32 approaches the center of the first opening 31 as it moves from the first surface 301 to the second surface 302, but it is not limited to this. As shown in Figures 39A and 39B, the tapered surface 32a of the first wall surface 32 may move away from the center of the first opening 31 as it moves from the first surface 301 to the second surface 302. In this case as well, the area of ​​the first wall surface 32 can be increased, and the amount of vapor deposition material 7 adhering to the first wall surface 32 can be increased. In this case, vapor deposition material 7 that has flown to the vicinity of the outer edge of the effective region 49 can be retained between the tapered surface 32a of the first wall surface 32 and the metal layer 40. This makes it possible to more effectively suppress the amount of vapor deposition material 7 passing through the second opening 41 located near the outer edge of the effective region 49.

[0217] (13th variation) For example, in the above example, both the first direction wall surface 321 and the second direction wall surface 322 have tapered surfaces 321a, 322a, but this is not limited to this. Only one of the first direction wall surface 321 or the second direction wall surface 322 may have a tapered surface.

[0218] (14th variation) Figure 40 shows an example of an apparatus 200 equipped with an organic device 100. The apparatus 200 includes a substrate 110 and an organic layer 130. The organic layer 130 is a layer formed by a vapor deposition method using a mask 20. The apparatus 200 is, for example, a smartphone. The apparatus 200 may also be a tablet terminal, a wearable terminal, etc. Wearable terminals include smart glasses, head-mounted displays, etc.

[0219] The multiple components disclosed in the above embodiments and variations can be combined as needed. Alternatively, some components may be removed from all the components shown in the above embodiments and variations.

Claims

1. A first layer comprising a first surface, a second surface located opposite the first surface, and a plurality of first openings penetrating from the first surface to the second surface, A metal layer comprising a third surface facing the second surface, a fourth surface located on the opposite side of the third surface, and a plurality of second openings penetrating from the third surface to the fourth surface and overlapping the first opening in a plan view, Includes, The first layer comprises silicon or a silicon compound, The metal layer includes an effective region in which the plurality of second openings are formed, and a peripheral region surrounding the effective region. The metal layer is a section surrounded by recesses that extend from the fourth surface toward the third surface in a plan view, or by defects that penetrate the metal layer, and has a section surrounded by recesses or defects that form a circumferential shape between adjacent effective regions. A mask in which a material with lower conductivity than the metal layer is disposed within the recess or the defect.

2. A first layer comprising a first surface, a second surface located opposite the first surface, and a plurality of first openings penetrating from the first surface to the second surface, A metal layer comprising a third surface facing the second surface, a fourth surface located on the opposite side of the third surface, and a plurality of second openings penetrating from the third surface to the fourth surface and overlapping the first opening in a plan view, Includes, The first layer comprises silicon or a silicon compound, The metal layer includes an effective region in which the plurality of second openings are formed, and a peripheral region surrounding the effective region. The metal layer is a section surrounded by recesses that extend from the fourth surface toward the third surface in a plan view, or by defects that penetrate the metal layer, and has a section surrounded by recesses or defects that form a circumferential shape between adjacent effective regions. A mask in which silicon oxide or silicon nitride is disposed within the recess or the defect.

3. The mask according to claim 1 or 2, wherein the recess or the missing portion continuously surrounds the section.

4. The mask according to claim 1 or 2, wherein the section is discontinuously surrounded by a plurality of recesses or defects that extend along different parts of the contour of the section in a plan view.

5. The mask according to claim 4, wherein the distance between adjacent ends of the recesses or defects along the contour is one-tenth or less of the length of the contour.

6. The aforementioned section is surrounded by the aforementioned recess, The mask according to claim 1 or 2, wherein the thickness of the bottom of the recess is half or less of the average thickness of the section.

7. The mask according to claim 1 or 2, wherein, in a plan view, the metal layer has a plurality of sections around a single effective area, each surrounded by the recess or the defect.

8. In a plan view, the contour of the first opening has a portion extending in a first direction and a portion extending in a second direction different from the first direction. The mask according to claim 7, wherein the plurality of sections include, in a plan view, sections adjacent to or overlapping with the portion extending in the first direction, and sections adjacent to or overlapping with the portion extending in the second direction.

9. The mask according to claim 1 or 2, wherein the aforementioned section overlaps the first layer.

10. The mask according to claim 1 or 2, wherein the metal layer is a section surrounded by the recess or the defect in a plan view, and further comprises a section surrounded by the recess or the defect that forms a circumferential shape within the region of the surrounding area that overlaps with the region between the outer edge of the first layer and the first opening.

11. The mask according to claim 1 or 2, wherein at least a portion of the compartment overlaps the first opening.

12. The metal layer is a section surrounded by a defect that penetrates the metal layer in a plan view, and has a circumferential recess or section surrounded by the defect between adjacent effective regions. The mask according to claim 1 or 2, wherein the missing portion overlaps the first layer.

13. It includes an intermediate layer located between the second surface and the third surface, which includes an intermediate opening that overlaps the first opening, The metal layer is a section surrounded by a defect that penetrates the metal layer in a plan view, and has a circumferential recess or section surrounded by the defect between adjacent effective regions. The mask according to claim 1 or 2, wherein the missing portion overlaps the intermediate layer.

14. The mask according to claim 2, wherein a material with lower conductivity than the metal layer is disposed within the recess or the defect.

15. The mask according to claim 1 or 2, wherein the wall surface defining the first opening includes, in a plan view, a tapered surface that approaches or moves away from the center of the first opening as it moves from the first surface toward the second surface.

16. The mask according to claim 15, wherein the tapered surface is directly connected to the second surface.

17. The wall surface defining the first opening includes a pair of first-direction wall surfaces extending in a first direction and facing each other, and a pair of second-direction wall surfaces extending in a second direction different from the first direction and facing each other. At least one of the first direction wall surface and the second direction wall surface includes a tapered surface that approaches or moves away from the center of the first opening as it moves from the first surface toward the second surface. The mask according to claim 1 or 2, wherein the dimensions of the wall surface in the first direction measured in a direction perpendicular to the first direction are different from the dimensions of the wall surface in the second direction measured in a direction perpendicular to the second direction.

18. The mask according to claim 17, wherein the difference between the dimension of the wall surface in the first direction measured in a direction perpendicular to the first direction and the dimension of the wall surface in the second direction measured in a direction perpendicular to the second direction is 5 μm or more.

19. The mask according to claim 17, wherein the tapered surface is directly connected to the second surface.

20. The wall surface defining the first opening includes a pair of first-direction wall surfaces extending in a first direction and facing each other, and a pair of second-direction wall surfaces extending in a second direction different from the first direction and facing each other. The first direction wall surface includes a first direction tapered surface that approaches or moves away from the center of the first opening as it moves from the first surface toward the second surface, The second direction wall surface includes a second direction tapered surface that approaches or moves away from the center of the first opening as it moves from the first surface toward the second surface. The mask according to claim 1 or 2, wherein the first direction taper width, which is the dimension of the first direction tapered surface measured in a direction perpendicular to the first direction, and the second direction taper width, which is the dimension of the second direction tapered surface measured in a direction perpendicular to the second direction, are different.

21. The mask according to claim 20, wherein the difference between the taper width in the first direction and the taper width in the second direction is 5 μm or more.

22. The mask according to claim 20, wherein the first tapered surface and the second tapered surface are directly connected to the second surface.

23. A method for manufacturing an organic device, comprising the step of forming an organic layer on a substrate by a deposition method using the mask described in claim 1 or 2.

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