Detection device

Abstract

To provide a detection device including a plurality of light-emitting elements and a plurality of photodiodes, and capable of improving detection accuracy.SOLUTION: A detection device 1 has: a plurality of photodiodes 30 provided on a substrate; a plurality of light-emitting elements 85-1 to 85-4 disposed facing the plurality of photodiodes; and a light-transmitting mount substrate 101 disposed between the plurality of photodiodes and the plurality of light-emitting elements and for mounting a plurality of detection objects 100. In a direction perpendicular to the substrate, the plurality of photodiodes, the mount substrate, and the plurality of light-emitting elements are arranged in this order. Among the plurality of light-emitting elements, the light-emitting element corresponding to the photodiode to be detected is turned on and another light-emitting element corresponding to the photodiode not to be detected is turned off. The photodiode to be detected outputs a sensor value based on light from the light-emitting element to be turned on. The light-emitting element that is adjacent to the light-emitting element to be turned on, at least in a row direction and a column direction, is turned off.SELECTED DRAWING: Figure 2

Description

Technical Field

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[0001] The present invention relates to a detection device.

Background Art

[0002] Patent Document 1 discloses a biosensor including a solid-state imaging device, a culture vessel held above the imaging surface of the solid-state imaging device, cells and a culture medium for cell growth contained in the culture vessel, and a light-emitting element for irradiating light into the culture vessel. In the biosensor of Patent Document 1, one light-emitting element is arranged for a plurality of cells (detectable substances) in the culture vessel.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] In such a detection device, there is a requirement to detect a plurality of detectable substances in a detection region with a larger area, and a plurality of light-emitting elements are required. In this case, for one detectable substance, light from a plurality of light-emitting elements is irradiated from different directions, and blurring occurs in the image captured by an optical sensor (a solid-state imaging device in Patent Document 1).

[0005] An object of the present invention is to provide a detection device including a plurality of light-emitting elements and a plurality of photodiodes, which can improve detection accuracy.

Means for Solving the Problems

[0006] A detection device according to one aspect of the present invention comprises a plurality of photodiodes provided on a substrate, a plurality of light-emitting elements arranged opposite to the plurality of photodiodes, and a light-transmitting mounting substrate arranged between the plurality of photodiodes and the plurality of light-emitting elements for mounting a plurality of objects to be detected. The plurality of photodiodes, the mounting substrate, and the plurality of light-emitting elements are arranged in the order of the plurality of photodiodes, the mounting substrate, and the plurality of light-emitting elements in a direction perpendicular to the substrate. Among the plurality of light-emitting elements, the light-emitting element corresponding to the photodiode to be detected lights up, and the other light-emitting elements corresponding to the photodiode not to be detected remain unlit. The photodiode to be detected outputs a sensor value based on the light from the lit light-emitting element, and the light-emitting elements adjacent to the lit light-emitting element are unlit, at least in the row and column directions. [Brief explanation of the drawing]

[0007] [Figure 1] Figure 1 is a schematic plan view showing a detection device according to the first embodiment. [Figure 2] Figure 2 is a cross-sectional view taken along line II-II' in Figure 1. [Figure 3] Figure 3 is a block diagram showing an example configuration of a detection device according to the first embodiment. [Figure 4] Figure 4 is a block diagram showing an example configuration of a detection control circuit according to the first embodiment. [Figure 5] Figure 5 is a circuit diagram showing an optical sensor according to the first embodiment. [Figure 6] Figure 6 is a magnified plan view showing the four photodiodes of the optical sensor according to the first embodiment. [Figure 7] Figure 7 is a cross-sectional view taken along the line VII-VII' in Figure 6. [Figure 8] Figure 8 is a schematic explanatory diagram showing the lighting patterns of multiple light-emitting elements and an example of the detection operation of the optical sensor in the detection device according to the first embodiment. [Figure 9] Figure 9 is a flowchart illustrating an example of the detection operation of the detection device according to the first embodiment. [Figure 10]Figure 10 is an explanatory diagram illustrating an example of the detection operation of the detection device according to the first embodiment. [Figure 11] Figure 11 is a schematic plan view showing a detection device according to the second embodiment. [Figure 12] Figure 12 is a schematic diagram illustrating the lighting patterns of multiple light-emitting elements and an example of the detection operation of the optical sensor in the detection device according to the second embodiment. [Figure 13] Figure 13 is a flowchart showing an example of the detection operation of the detection device according to the second embodiment. [Figure 14] Figure 14 is an explanatory diagram illustrating an example of the detection operation of the detection device according to the second embodiment. [Figure 15] Figure 15 is a schematic cross-sectional view showing a detection device according to the first modified example. [Figure 16] Figure 16 is a schematic plan view showing a detection device according to the second modified example. [Figure 17] Figure 17 is a schematic explanatory diagram showing the lighting patterns of multiple light-emitting elements and an example of the detection operation of the optical sensor in the detection device according to the second modified example. [Figure 18] Figure 18 is an explanatory diagram illustrating an example of the detection operation of the detection device according to the second modified example. [Modes for carrying out the invention]

[0008] Embodiments for implementing the present invention will be described in detail with reference to the drawings. The present disclosure is not limited by the content described in the following embodiments. Further, the constituent elements described below include those that can be easily assumed by those skilled in the art and substantially identical ones. Furthermore, the constituent elements described below can be combined as appropriate. Note that the disclosure is merely an example, and those that can be easily conceived by those skilled in the art with appropriate modifications while maintaining the gist of the present disclosure are naturally included in the scope of the present disclosure. Also, for the purpose of making the description clearer, the drawings may schematically represent the width, thickness, shape, etc. of each part compared to the actual aspect, but this is merely an example and does not limit the interpretation of the present disclosure. Also, in the present disclosure and each figure, the same reference numerals are given to the same elements as those described above with respect to the previously shown figures, and detailed descriptions may be omitted as appropriate.

[0009] In this specification and the claims, when expressing the aspect of arranging another structure on a certain structure, when simply described as "on", unless otherwise specified, it includes both the case of arranging another structure directly above so as to be in contact with a certain structure and the case of arranging another structure above a certain structure via yet another structure.

[0010] (First Embodiment) FIG. 1 is a plan view schematically showing a detection device according to the first embodiment. As shown in FIG. 1, the detection device 1 includes an optical sensor 10, a light source device 81, and a mounting substrate 101 (see FIG. 2) for mounting the detection object 100.

[0011] The optical sensor 10 has an array substrate 2, a plurality of sensor pixels 3 (photodiodes 30) formed on the array substrate 2, gate line drive circuits 15A and 15B, a signal line drive circuit 16, and a detection control circuit 11.

[0012] The array substrate 2 is formed with the substrate 21 as the base. Also, each of the plurality of sensor pixels 3 includes a photodiode 30, a plurality of driving transistors Tr (see FIG. 5), and various wirings. The array substrate 2 on which the photodiodes 30 are formed is a driving circuit substrate that drives sensors for each predetermined detection area, and is also called a backplane or an active matrix substrate.

[0013] The substrate 21 has a detection area AA and a peripheral area GA. The detection area AA is an area where a plurality of sensor pixels 3 (a plurality of photodiodes 30) are provided. The peripheral area GA is an area between the outer periphery of the detection area AA and the outer edge of the substrate 21, and is an area where no plurality of sensor pixels 3 are provided. The gate line driving circuits 15A, 15B, the signal line driving circuit 16, and the detection control circuit 11 are provided in the peripheral area GA.

[0014] In the following description, the first direction Dx is a direction in a plane parallel to the substrate 21. The second direction Dy is a direction in a plane parallel to the substrate 21 and is perpendicular to the first direction Dx. Note that the second direction Dy may intersect without being perpendicular to the first direction Dx. The third direction Dz is perpendicular to the first direction Dx and the second direction Dy, and is the normal direction of the main surface of the substrate 21. Also, "planar view" refers to the positional relationship when viewed from a direction perpendicular to the substrate 21.

[0015] Each of the plurality of sensor pixels 3 is an optical sensor having a photodiode 30 as a sensor element. The photodiode 30 outputs an electrical signal corresponding to the light irradiated thereon. More specifically, the photodiode 30 is an OPD (Organic Photodiode) or a PIN (Positive Intrinsic Negative) photodiode using an organic semiconductor. The plurality of sensor pixels 3 (a plurality of photodiodes 30) are arranged in a matrix in the detection area AA of the substrate 21.

[0016] The detection control circuit 11 supplies control signals Sa, Sb, and Sc (see Figure 3) to the gate line drive circuits 15A, 15B, and signal line drive circuit 16, respectively, and controls their operation. Specifically, the gate line drive circuit 15A outputs a reset control signal RST to the reset transistor TrR (see Figure 5) based on the control signal Sa. The gate line drive circuit 15B outputs a gate drive signal VGL to the gate line GL (see Figure 5) based on the control signal Sb. The signal line drive circuit 16 electrically connects the signal line SL, selected based on the control signal Sc, to the detection control circuit 11. The detection control circuit 11 also includes a signal processing circuit that processes the detection signal Vdet from multiple photodiodes 30.

[0017] The photodiodes 30 of the multiple sensor pixels 3 perform detection according to the reset control signal RST and gate drive signal VGL supplied from the gate line drive circuits 15A and 15B. Each of the multiple photodiodes 30 outputs an electrical signal corresponding to the light irradiated upon it as a detection signal Vdet to the signal line drive circuit 16. The detection control circuit 11 processes the detection signals Vdet from the multiple photodiodes 30 and outputs a sensor value So based on the detection signal Vdet to the host IC 70 (see Figure 3). As a result, the detection device 1 detects information about the object to be detected 100.

[0018] The light source device 81 includes a light-emitting element substrate 82 and a plurality of light-emitting elements 85. The plurality of light-emitting elements 85 are provided on the light-emitting element substrate 82 and are arranged opposite the plurality of photodiodes 30 of the optical sensor 10. Each of the plurality of light-emitting elements 85 is composed of, for example, a light-emitting diode (LED).

[0019] Of the multiple light-emitting elements 85, elements 85-1, 85-2, 85-3, and 85-4 are arranged in the second direction Dy (column direction). Light-emitting elements 85-5, 85-6, 85-7, and 85-8 are also arranged in the second direction Dy (column direction) and are positioned adjacent to the right side (first direction Dx) of each of the light-emitting elements 85-1, 85-2, 85-3, and 85-4.

[0020] In the following explanation, light-emitting elements 85-1, 85-2, 85-3, and 85-4 may be referred to as multiple light-emitting elements 85 arranged in the first column, and light-emitting elements 85-5, 85-6, 85-7, and 85-8 may be referred to as multiple light-emitting elements 85 arranged in the second column. Also, in the following explanation, if it is not necessary to distinguish between the multiple light-emitting elements 85-1, 85-2, 85-3, 85-4, 85-5, 85-6, 85-7, and 85-8, they will simply be referred to as light-emitting elements 85.

[0021] The detection area AA of the optical sensor 10 is divided into multiple detection blocks AAL1, AAL2, AAL3, AAL4, AAR1, AAR2, AAR3, and AAR4. Each of the multiple detection blocks AAL1, AAL2, AAL3, AAL4, AAR1, AAR2, AAR3, and AAR4 corresponds to each of the multiple light-emitting elements 85-1, 85-2, 85-3, 85-4, 85-5, 85-6, 85-7, and 85-8. The multiple photodiodes 30 are arranged in a matrix in each of the detection blocks AAL1, AAL2, AAL3, AAL4, AAR1, AAR2, AAR3, and AAR4.

[0022] In the following explanation, if it is not necessary to distinguish between detection blocks AAL1, AAL2, AAL3, AAL4, AAR1, AAR2, AAR3, and AAR4, they may be referred to simply as detection block AAL and AAR.

[0023] Detection blocks AAL1, AAL2, AAL3, and AAL4 are arranged in the second direction Dy (column direction). Detection blocks AAR1, AAR2, AAR3, and AAR4 are arranged in the second direction Dy (column direction) and are positioned adjacent to the right side (first direction Dx) of detection blocks AAL1, AAL2, AAL3, and AAL4, respectively.

[0024] Detection blocks AAL1, AAL2, AAL3, and AAL4 are arranged in accordance with the multiple light-emitting elements 85 arranged in the first column. The multiple photodiodes 30 of detection blocks AAL1, AAL2, AAL3, and AAL4 may be referred to as the multiple photodiodes 30 arranged in the first column. Also, detection blocks AAR1, AAR2, AAR3, and AAR4 are arranged in accordance with the multiple light-emitting elements 85 arranged in the second column. The multiple photodiodes 30 of detection blocks AAR1, AAR2, AAR3, and AAR4 may be referred to as the multiple photodiodes 30 arranged in the second column.

[0025] The width of detection blocks AAL and AAR in the second direction Dy is equivalent to the arrangement pitch of the multiple light-emitting elements 85 in the second direction Dy. The width of detection blocks AAL and AAR in the first direction Dx is approximately half the width of detection region AA in the first direction Dx.

[0026] In detection blocks AAL and AAR, at least one of the multiple photodiodes 30 is positioned to overlap with the corresponding light-emitting element 85 in a plan view. For example, at least one of the multiple photodiodes 30 in detection block AAL1 and the light-emitting element 85-1 are positioned to overlap in a plan view.

[0027] Figure 2 is a cross-sectional view taken along line II-II' in Figure 1. As shown in Figure 2, the detection device 1 is arranged in the third direction Dz in the following order: optical sensor 10 (multiple photodiodes 30), mounting substrate 101, and light source device 81 (multiple light-emitting elements 85).

[0028] The object to be detected 100 is, for example, a minute object such as a cell. The detection device 1 is a biosensor that detects minute objects such as cells. The mounting substrate 101 is a translucent plate-shaped member made of, for example, glass. Multiple objects to be detected 100 are mounted on the mounting substrate 101 together with the culture medium 102. In addition, a cover member 103 that covers the multiple objects to be detected 100 is provided on the upper side of the mounting substrate 101. The mounting substrate 101 and the cover member 103 are, for example, petri dishes.

[0029] However, the detection device 1 is not limited to a biosensor and may be configured as, for example, a fingerprint detection device for detecting fingerprints or a vein detection device for detecting vascular patterns such as veins. In this case, the object to be detected 100 may be a living body such as a finger, palm, or wrist.

[0030] Multiple objects to be detected 100 are arranged on a single mounting substrate 101. In the example shown in Figure 2, objects to be detected 100 are arranged in each of the regions corresponding to multiple light-emitting elements 85-1, 85-2, 85-3, and 85-4 (detection blocks AAL1, AAL2, AAL3, and AAL4 (see Figure 1)). That is, in the third direction Dz, for example, an object to be detected 100 is arranged between light-emitting element 85-1 and the photodiode 30 of the corresponding detection block AAL1 (see Figure 1). Another object to be detected 100 is arranged between light-emitting element 85-2 and the photodiode 30 of the corresponding detection block AAL2 (see Figure 1).

[0031] Note that in Figure 2, for ease of understanding, one detected object 100 is arranged corresponding to one light-emitting element 85, but this is not limited to this. Multiple detected objects 100 may be arranged corresponding to one light-emitting element 85, or there may be detection blocks AAL and AAR in which no detected object 100 is arranged corresponding to one light-emitting element 85.

[0032] The light source device 81 lights up at least one of the multiple light-emitting elements 85 (for example, light-emitting element 85-1) and leaves the other light-emitting elements 85 (light-emitting elements 85-2, 85-3, and 85-4) unlit. The light emitted from light-emitting element 85-1 passes through the object to be detected 100 and the mounting substrate 101 corresponding to light-emitting element 85-1 and irradiates the multiple photodiodes 30 of the optical sensor 10. Here, the light emitted from light-emitting element 85-1 also spreads and irradiates the object to be detected 100 which is arranged in correspondence with the other light-emitting elements 85-2, 85-3, and 85-4. The light source device 81 then sequentially lights up the multiple light-emitting elements 85 in a time-division manner. The lighting patterns of the multiple light-emitting elements 85 and examples of the detection operation of the optical sensor 10 will be described later in Figure 8 and subsequent figures.

[0033] Figure 3 is a block diagram showing an example configuration of a detection device according to the first embodiment. As shown in Figure 3, the detection device 1 further includes a host IC 70 that controls an optical sensor 10 and a light source device 81. The light source device 81 includes an array substrate 84, gate line drive circuits 17A, 17B and a signal line drive circuit 18 formed on the array substrate 84, and a light-emitting element control circuit 12.

[0034] Multiple light-emitting elements 85 are arranged in two rows in an area that overlaps with the detection area AA of the array substrate 84. The array substrate 84 is formed using the light-emitting element substrate 82 (see Figures 1 and 2) as a base and is a drive circuit board that switches each of the multiple light-emitting elements 85 on (lit) and off (not lit).

[0035] The light-emitting element control circuit 12 is a circuit that supplies control signals Sd, Se, and Sf to the gate line drive circuits 17A and 17B and the signal line drive circuit 18, respectively, and controls their operation. Specifically, the gate line drive circuits 17A and 17B output drive signals to the gate lines (not shown) based on the control signals Sd and Se, and select a predetermined row of light-emitting elements 85. The signal line drive circuit 18 supplies a light-emitting element control signal to the selected signal line (not shown) based on the control signal Sf. As a result, the light source device 81 can switch each of the multiple light-emitting elements 85 between being lit and not lit.

[0036] The array substrate 84 of the light source device 81 is a so-called active matrix substrate, but is not limited to this. The on / off control of the multiple light-emitting elements 85 can be done by any method; for example, the light-emitting element control circuit 12 may control each of the multiple light-emitting elements 85 individually.

[0037] Figure 4 is a block diagram showing an example configuration of a detection control circuit according to the first embodiment. As shown in Figure 4, the detection control circuit 11 includes a detection signal amplitude adjustment circuit 41, an A / D conversion circuit 42, a signal processing circuit 43, and a detection timing control circuit 44. The detection timing control circuit 44 controls the detection signal amplitude adjustment circuit 41, the A / D conversion circuit 42, and the signal processing circuit 43 to operate synchronously based on a control signal supplied from the host IC 70 (see Figure 3).

[0038] The detection control circuit 11 includes a detection signal amplitude adjustment circuit 41 and an A / D conversion circuit 42, which are connected to the signal line SL (see Figure 5) and perform signal processing on the detection signal Vdet. The detection signal amplitude adjustment circuit 41 is a circuit that adjusts the amplitude of the detection signal Vdet output from the photodiode 30 and is configured to include, for example, an amplifier. The A / D conversion circuit 42 converts the analog signal output from the detection signal amplitude adjustment circuit 41 into a digital signal. The signal processing circuit 43 processes the digital signal from the A / D conversion circuit 42 and transmits the sensor value So to the host IC 70.

[0039] Returning to Figure 3, the host IC 70 has an integrated control circuit 71 that synchronously controls the optical sensor 10 and the light source device 81. Based on the control signals from the integrated control circuit 71 of the host IC 70, the switching of the on / off lighting patterns of the multiple light-emitting elements 85 on the light source device 81 side and the detection (scanning) of the multiple photodiodes 30 on the optical sensor 10 side are controlled synchronously.

[0040] Furthermore, the host IC 70 includes a sensor value storage circuit 72, a sensor value selection circuit 73, and a combined data generation circuit 74 as control circuits on the optical sensor 10 side. The sensor value storage circuit 72 is a circuit that stores the sensor value So output from the detection control circuit 11 of the optical sensor 10.

[0041] The sensor value selection circuit 73 is a circuit that selects the sensor values ​​So-L and So-R (see Figure 10) for the detection blocks AAL and AAR to be detected from among the sensor values ​​So output from multiple photodiodes 30 in the detection region AA. More specifically, the sensor value selection circuit 73 selects the sensor values ​​So-L and So-R (see Figure 10) for the detection blocks AAL and AAR corresponding to the lit-up light-emitting elements 85 based on the lighting patterns of the light-emitting elements 85 obtained from the lighting pattern memory circuit 76. The sensor value selection circuit 73 also deselects the sensor values ​​So-L and So-R (see Figure 10) for the detection blocks AAL and AAR corresponding to the non-lit-up light-emitting elements 85 based on the lighting patterns of the light-emitting elements 85 obtained from the lighting pattern memory circuit 76. The combined data generation circuit 74 is a circuit that generates combined data SoA by integrating the sensor values ​​So-L and So-R selected for each subframe period SF (see Figure 8).

[0042] The host IC 70 has a lighting pattern generation circuit 75 and a lighting pattern storage circuit 76 as control circuits on the light source device 81 side. The lighting pattern storage circuit 76 is a circuit that stores information on the on (lit) and off (not lit) lighting patterns of the multiple light-emitting elements 85 for each subframe period SF (see Figure 8). The lighting pattern generation circuit 75 is a circuit that generates various control signals based on the lighting pattern information of the lighting pattern storage circuit 76. The lighting pattern generation circuit 75 then outputs a light-emitting element control signal, which includes information on the on and off lighting patterns of the multiple light-emitting elements 85, to the light-emitting element control circuit 12 for each subframe period SF.

[0043] The host IC 70 further includes an image generation circuit 77. The image generation circuit 77 is a circuit that generates an image based on the combined data SoA from the combined data generation circuit 74 and the position information of the multiple photodiodes 30 in the detection region AA.

[0044] Note that the configurations of the host IC 70 and detection control circuit 11 shown in Figures 3 and 4 are merely examples and can be modified as appropriate. Also, although the light source device 81 has two gate line drive circuits 17A and 17B, it may have only one gate line drive circuit.

[0045] Next, an example of the configuration of the optical sensor 10 will be described. Figure 5 is a circuit diagram showing the optical sensor according to the first embodiment. In addition, Figure 5 also shows a part of the circuit configuration of the detection control circuit 11. As shown in Figure 5, the sensor pixel 3 includes a photodiode 30, a capacitive element Ca, and a driving transistor Tr. The capacitive element Ca is the capacitance (sensor capacitance) formed on the photodiode 30 and is equivalently connected in parallel with the photodiode 30.

[0046] Figure 5 shows two gate lines GL(m) and GL(m+1) aligned in the second direction Dy, among the multiple gate lines GL. Each of the multiple gate lines GL extends in the first direction Dx. Also shown are two signal lines SL(n) and SL(n+1) aligned in the first direction Dx, among the multiple signal lines SL. Each of the multiple signal lines SL extends in the second direction Dy. Sensor pixel 3 is the region enclosed by the gate lines GL and signal lines SL. The multiple gate lines GL are connected to the gate line drive circuit 15B. The multiple signal lines SL are connected to the detection circuit (see Figure 4).

[0047] A drive transistor Tr is provided corresponding to each of the multiple photodiodes 30. The drive transistor Tr is composed of a thin-film transistor, and in this example, it is composed of an n-channel MOS (Metal Oxide Semiconductor) type TFT (Thin Film Transistor).

[0048] Each of the multiple gate lines GL is connected to the gate of a plurality of drive transistors Tr arranged in the first direction Dx. Each of the multiple signal lines SL is connected to either the source or the drain of a plurality of drive transistors Tr arranged in the second direction Dy. The other of the source and drain of the plurality of drive transistors Tr is connected to the cathode and capacitive element Ca of the photodiode 30.

[0049] Multiple photodiodes 30 are arranged in a matrix in the detection region AA of the substrate 21 and are electrically connected to multiple gate lines GL and multiple signal lines SL via drive transistors Tr. The anodes of the photodiodes 30 are supplied with a sensor power supply signal VDDSNS from the detection control circuit 11 (see Figure 1). In addition, the signal lines SL and the capacitive elements Ca are supplied with a sensor reference voltage COM, which becomes the initial potential of the signal lines SL and the capacitive elements Ca, from the detection control circuit 11 via a reset transistor TrR.

[0050] During the exposure period, when light is shone onto the sensor pixel 3, a current flows through the photodiode 30 in proportion to the amount of light, causing charge to accumulate in the capacitive element Ca. During the readout period, when the drive transistor Tr is turned on, a current flows through the signal line SL in proportion to the charge accumulated in the capacitive element Ca. The signal line SL is connected to the detection control circuit 11 via the output transistor TrS of the signal line drive circuit 16. As a result, the detection device 1 can detect a signal corresponding to the amount of light shone onto the photodiode 30 for each sensor pixel 3.

[0051] The detection control circuit 11 is connected to the signal line SL when the switch SSW is turned on during the readout period. The detection signal amplitude adjustment circuit 41 of the detection control circuit 11 amplifies the voltage according to the charge supplied from the signal line SL. A reference potential (Vref) with a fixed potential is input to the non-inverting input (+) of the detection signal amplitude adjustment circuit 41, and the signal line SL is connected to the inverting input (-). In this embodiment, the same signal as the sensor reference voltage COM is input as the reference potential (Vref) voltage. The signal processing circuit 43 (see Figure 4) calculates the difference between the detection signal Vdet when light is irradiated and the detection signal Vdet when light is not irradiated as the sensor value So. The detection signal amplitude adjustment circuit 41 also has a capacitive element Cb and a reset switch RSW. During the reset period, the reset switch RSW is turned on, and the charge of the capacitive element Cb is reset.

[0052] Furthermore, the driving transistor Tr is not limited to an n-type TFT, but may be composed of a p-type TFT. Also, the pixel circuit of the sensor pixel 3 shown in Figure 5 is merely an example, and the sensor pixel 3 may be provided with multiple transistors corresponding to one photodiode 30.

[0053] Figure 6 is a magnified plan view showing the four photodiodes of the optical sensor according to the first embodiment. The lower electrode 23 of the photodiode 30 is located in the region enclosed by two gate lines GL and two signal lines SL.

[0054] The drive transistor Tr has a semiconductor layer 61, a source electrode 62, a drain electrode 63, and a gate electrode 64. The semiconductor layer 61 extends along the gate line GL and is provided intersecting the gate electrode 64 in a plan view. The gate electrode 64 is connected to the gate line GL and extends in a direction perpendicular to the gate line GL. One end of the semiconductor layer 61 is connected to the source electrode 62 via a contact hole CH4. The lower electrode 23 is electrically connected to the source electrode 62 of the drive transistor Tr via a contact hole (not shown). This electrically connects the drive transistor Tr to the photodiode 30. The other end of the semiconductor layer 61 is connected to the drain electrode 63 via a contact hole CH3. The drain electrode 63 is connected to the signal line SL.

[0055] Figure 7 is a cross-sectional view taken along line VII-VII' of Figure 6. As shown in Figure 7, a circuit formation layer 29, an insulating film 27, a photodiode 30, and a sealing film 28 are stacked on a substrate 21 in that order. The substrate 21 is an insulating substrate, and for example, a glass substrate such as quartz or alkali-free glass is used. The circuit formation layer 29 is provided on the substrate 21 and is the layer on which various transistors such as the drive transistor Tr shown in Figures 5 and 6, various wirings, etc. are formed. In Figure 7, a signal line SL connected to the drive transistor Tr is shown. The insulating film 27 covers the signal line SL and is provided on the circuit formation layer 29 including the drive transistor Tr.

[0056] The photodiode 30 is provided on an insulating film 27. More specifically, the photodiode 30 has a lower electrode 23, a lower buffer layer 32, an active layer 31, an upper buffer layer 33, and an upper electrode 24. The photodiode 30 is stacked in the following order perpendicular to the substrate 21: lower electrode 23, lower buffer layer 32 (hole transport layer), active layer 31, upper buffer layer 33 (electron transport layer), and upper electrode 24.

[0057] The lower electrode 23 is the anode electrode of the photodiode 30 and is formed of a light-transmitting conductive material such as ITO (Indium Tin Oxide).

[0058] The active layer 31 changes its properties (e.g., voltage-current characteristics and resistance) depending on the light it is irradiated with. Organic materials are used as the material for the active layer 31. Specifically, the active layer 31 is a bulk heterostructure in which a p-type organic semiconductor and an n-type organic semiconductor, an n-type fullerene derivative (PCBM), are mixed. Examples of low molecular weight organic materials that can be used for the active layer 31 include C60 (fullerene), PCBM (phenyl C61-butyric acid methyl ester), CuPc (copper phthalocyanine), F16CuPc (fluorinated copper phthalocyanine), rubrene (5,6,11,12-tetraphenyltetracene), and PDI (derivative of perylene).

[0059] The active layer 31 can be formed by vapor deposition (Dry Process) using these low-molecular-weight organic materials. In this case, the active layer 31 may be, for example, a laminated film of CuPc and F16CuPc, or a laminated film of rubrene and C60. The active layer 31 can also be formed by coating (Wet Process). In this case, the active layer 31 uses a material that combines the low-molecular-weight organic material and the polymeric organic material described above. As the polymeric organic material, for example, P3HT (poly(3-hexylthiophene)), F8BT (F8-alt-benzothiadiazole), etc. can be used. The active layer 31 can be a film in which P3HT and PCBM are mixed, or a film in which F8BT and PDI are mixed.

[0060] The lower buffer layer 32 is a hole transport layer, and the upper buffer layer 33 is an electron transport layer. The lower buffer layer 32 and the upper buffer layer 33 are provided to facilitate the arrival of holes and electrons generated in the active layer 31 at the lower electrode 23 or the upper electrode 24. The lower buffer layer 32 (hole transport layer) is in direct contact with the lower electrode 23 and is also provided in the region between adjacent lower electrodes 23. The active layer 31 is in direct contact with the lower buffer layer 32. The material of the hole transport layer is a metal oxide layer. Examples of metal oxide layers used include tungsten oxide (WO3) and molybdenum oxide.

[0061] The upper buffer layer 33 (electron transport layer) is in direct contact with the active layer 31, and the upper electrode 24 is in direct contact with the upper buffer layer 33. The electron transport layer is made of ethoxylated polyethyleneimine (PEIE).

[0062] The materials and manufacturing methods for the lower buffer layer 32, the active layer 31, and the upper buffer layer 33 are merely examples, and other materials and manufacturing methods may be used. For example, the lower buffer layer 32 and the upper buffer layer 33 are not limited to single layers, but may be formed as laminated films including an electron blocking layer and a hole blocking layer.

[0063] The upper electrode 24 is provided on the upper buffer layer 33. The upper electrode 24 is the cathode electrode of the photodiode 30 and is formed continuously over the entire detection region AA. In other words, the upper electrode 24 is provided continuously on multiple photodiodes 30. The upper electrode 24 faces multiple lower electrodes 23, with the lower buffer layer 32, the active layer 31, and the upper buffer layer 33 in between. The upper electrode 24 is formed of a light-transmitting conductive material such as ITO or IZO.

[0064] The sealing film 28 is provided on the upper electrode 24. The sealing film 28 can be an inorganic film such as a silicon nitride film or an aluminum oxide film, or a resin film such as acrylic. The sealing film 28 is not limited to a single layer, but may be a laminated film of two or more layers combining the above-mentioned inorganic films and resin films. The photodiode 30 is well sealed by the sealing film 28, and the intrusion of moisture from the upper side can be suppressed.

[0065] Note that the configuration of the photodiode 30 shown in Figures 6 and 7 is merely an example and can be modified as appropriate. For example, the upper electrode 24 may be the anode electrode of the photodiode 30 and the lower electrode 23 may be the cathode electrode of the photodiode 30. In Figures 6 and 7, an OPD using an organic semiconductor is described as the photodiode 30, but it is not limited to this, and a diode using an inorganic semiconductor such as a PIN photodiode may also be used.

[0066] Next, the detection method of the detection device 1 will be described. Figure 8 is a schematic explanatory diagram showing the lighting patterns of multiple light-emitting elements and an example of the detection operation of the optical sensor of the detection device according to the first embodiment. Figure 9 is a flowchart showing an example of the detection operation of the detection device according to the first embodiment. Figure 10 is an explanatory diagram for explaining an example of the detection operation of the detection device according to the first embodiment.

[0067] As shown in Figure 8, the detection device 1 divides one frame period F into multiple subframe periods SF, and controls the illumination and de-illumination of multiple light-emitting elements 85 and the detection of multiple photodiodes 30 for each subframe period SF. Here, the frame period F is the period required to acquire sensor values ​​So from each of the multiple photodiodes 30 covering the entire detection area AA. The subframe period SF is the period during which sensor values ​​So are acquired from each of the multiple photodiodes 30 of a predetermined detection target (detection blocks AAL, AAR).

[0068] In the light source device 81, the lighting patterns of the multiple light-emitting elements 85 are switched for each subframe period SF. The optical sensor 10, with the gate line drive circuits 15A and 15B and the detection control circuit 11, performs detection operations for each subframe period SF, specifically for the reset period T1, exposure period T2, readout period T3, and transmission period T4.

[0069] During the reset period T1, the gate line drive circuit 15A supplies a reset control signal RST to the reset transistor TrR, and the gate line drive circuit 15B sequentially supplies gate drive signals VGL to multiple gate lines GL. As a result, multiple photodiodes 30 in the detection region AA are reset.

[0070] During the exposure period T2, a current flows through the photodiode 30 in proportion to the amount of light irradiated, causing charge to accumulate in the capacitive element Ca. During the readout period T3, the gate line drive circuit 15B sequentially supplies gate drive signals VGL to multiple gate lines GL. This scans multiple photodiodes 30 to be detected in the detection region AA, and the photodiode 30 selected for detection based on the gate drive signal VGL outputs a detection signal Vdet. The detection signal Vdet is output to the detection control circuit 11 via the signal line SL. As explained in Figure 4, the detection control circuit 11 generates a sensor value So by signal processing the detection signal Vdet from the photodiode 30.

[0071] During the transmission period T4, the signal processing circuit 43 (see Figure 4) of the detection control circuit 11 transmits the sensor value So obtained by signal processing to the host IC 70.

[0072] More specifically, as shown in Figure 9, the lighting pattern generation circuit 75 of the host IC 70 (see Figure 3) sets the light-emitting element number N to N=1 (step ST1). In this embodiment, the light-emitting element number N is a natural number between 1 and 8, and is assigned to each of the light-emitting elements 85-1 to 85-8.

[0073] Based on the control signal from the lighting pattern generation circuit 75, the light source device 81 lights up the Nth (=1st) light-emitting element 85-N (step ST2). The light source device 81 also delights the other light-emitting elements 85 other than light-emitting element 85-N. Specifically, during the subframe period SF1, the light source device 81 lights up light-emitting element 85-1 and delights light-emitting elements 85-2 through 85-8.

[0074] The optical sensor 10 scans the entire surface of the multiple photodiodes 30 in the detection area AA (step ST3). Specifically, during the subframe period SF1, a reset period T1, an exposure period T2, a readout period T3, and a transmission period T4 are performed. During the readout period T3, the gate line drive circuit 15B sequentially scans from the first row of gate lines GL to the last row of gate lines GL. As a result, sensor values ​​So are transmitted from the multiple photodiodes 30 across the entire detection area AA to the host IC 70.

[0075] The lighting pattern generation circuit 75 determines whether the light-emitting element number N is N > 7 (step ST4). If the light-emitting element number N is not N > 7 (step ST4, No), the lighting pattern generation circuit 75 updates the light-emitting element number N to N = N + 1 (step ST5). Then, the detection device 1 repeatedly executes steps ST2 and ST3 until the light-emitting element number N becomes N > 7.

[0076] Specifically, as shown in Figure 8, during subframe period SF2, the light source device 81 lights up light-emitting element 85-2, and keeps light-emitting elements 85-1, 85-3 through 85-8 off-light. During subframe period SF2, similar to subframe period SF1, multiple photodiodes 30 across the entire detection area AA are scanned, and the sensor value So is transmitted to the host IC 70. During subframe periods SF3 through SF6, light-emitting elements 85-3 through 85-6 are sequentially lit. Also, during subframe periods SF3 through SF6, multiple photodiodes 30 across the entire detection area AA are scanned.

[0077] During subframe period SF7, the light source device 81 illuminates light-emitting element 85-7 and de-illuminates light-emitting elements 85-1 through 85-6 and 85-8. During subframe period SF8, the light source device 81 illuminates light-emitting element 85-8 and de-illuminates light-emitting elements 85-1 through 85-7. In this way, the light source device 81 changes the position of the illuminated light-emitting elements 85 for each subframe period SF.

[0078] Furthermore, the optical sensor 10 scans the entire surface of multiple photodiodes 30 in detection area AA during subframe periods SF7 and SF8, respectively.

[0079] In the left diagram of Figure 10, when detection blocks AAL and AAR are shown in white, it indicates that the multiple photodiodes 30 in detection blocks AAL and AAR are scanned. When detection blocks AAL and AAR are hatched (see, for example, Figure 14), it indicates that the multiple photodiodes 30 in detection blocks AAL and AAR are not scanned. Similarly, when light-emitting elements 85-1 to 85-8 are shown in white, it indicates that light-emitting element 85 is lit. When light-emitting elements 85-1 to 85-8 are hatched, it indicates that light-emitting element 85 is not lit.

[0080] As shown in Figure 10, in each subframe period SF, multiple photodiodes 30 across the entire surface of detection blocks AAL and AAR are scanned, and the position of the light-emitting element 85 that lights up differs sequentially for each subframe period SF. For example, in subframe period SF1, light-emitting element 85-1 lights up. The light from light-emitting element 85-1 illuminates multiple photodiodes 30 of detection block AAL1 corresponding to light-emitting element 85-1.

[0081] In other words, the photodiode 30 of detection block AAL1 corresponding to the illuminated light-emitting element 85-1 is the photodiode 30 to be detected, while the photodiodes 30 of detection blocks AAL and AAR corresponding to the non-illuminated light-emitting elements 85-2 to 85-8 are the photodiodes 30 not to be detected.

[0082] Subsequently, the lighting patterns of the light-emitting elements 85 are changed sequentially, and during subframe period SF2, light-emitting element 85-2 is lit. The light from light-emitting element 85-2 illuminates multiple photodiodes 30 of the detection block AAL2 corresponding to light-emitting element 85-2. During subframe period SF8, light-emitting element 85-8 is lit. The light from light-emitting element 85-8 illuminates multiple photodiodes 30 of the detection block AAR4 corresponding to light-emitting element 85-8.

[0083] In this embodiment, during each subframe period SF, at least adjacent light-emitting elements 85 (e.g., light-emitting elements 85-2, 85-5) in the row and column directions to a lit light-emitting element 85 (e.g., light-emitting element 85-1) are not lit. In addition, depending on the lit light-emitting element 85, the photodiodes 30 of the detection blocks AAL and AAR to be detected are sequentially switched for each subframe period SF. In this embodiment, the entire detection area AA, including the photodiodes 30 to be detected and the photodiodes 30 not to be detected, is scanned for each subframe period SF.

[0084] Returning to Figure 9, if the light-emitting element number N is N > 7 (step ST4, Yes), that is, if all light-emitting elements 85 have been lit up for each subframe period SF, the sensor value selection circuit 73 of the host IC 70 selects the sensor value So of detection blocks AAL and AAR corresponding to the lit-up area for each subframe period SF (step ST6).

[0085] Specifically, the central diagram of Figure 10 (step ST6) schematically shows the sensor values ​​So transmitted from multiple photodiodes 30 for each detection block AAL and AAR. For example, sensor value So-L1 represents the sensor value So-L1 transmitted from multiple photodiodes 30 of detection block AAL1. Also, sensor value So-R1 represents the sensor value So-R1 transmitted from multiple photodiodes 30 of detection block AAR1. In Figure 10, the sensor value So selected by the sensor value selection circuit 73 in each subframe period SF (shown as subframe periods SF1 and SF8 in Figure 10) is shown in white. Unselected sensor values ​​So are shown with hatching.

[0086] The sensor value selection circuit 73, for example, during the subframe period SF1, selects the sensor value So-L1 from the multiple photodiodes 30 of the detection block AAL1 corresponding to the lit light-emitting element 85-1. The sensor value selection circuit 73 also deselects the sensor values ​​So-L2, So-L3, So-L4, So-R1, So-R2, So-R3, and So-R4 from the multiple photodiodes 30 of the detection blocks AAL and AAR corresponding to the non-lit light-emitting elements 85-2 through 85-8.

[0087] The sensor value So selected is varied for each subframe period SF. For example, during subframe period SF8, the sensor value selection circuit 73 selects the sensor value So-R4 from the multiple photodiodes 30 of detection block AAR4 corresponding to the lit light-emitting element 85-8. The sensor value selection circuit 73 also deselects the sensor values ​​So-L1, So-L2, So-L3, So-L4, So-R1, So-R2, and So-R3 from the multiple photodiodes 30 of detection blocks AAL and AAR corresponding to the non-lit light-emitting elements 85-1 through 85-7.

[0088] Returning to Figure 9, the combined data generation circuit 74 (see Figure 3) combines the sensor values ​​So selected in step ST6 (step ST7). The right-hand diagram of Figure 10 (step ST7) schematically shows the configuration of the combined data SoA generated by the combined data generation circuit 74. The combined data SoA shown in the right-hand diagram of Figure 10 consists of sensor values ​​So-L1, So-L2, So-L3, So-L4, So-R1, So-R2, So-R3, and So-R4.

[0089] The sensor values ​​So-L1, So-L2, So-L3, So-L4, So-R1, So-R2, So-R3, and So-R4 of the combined data SoA are each selected from the sensor values ​​So acquired during different subframe periods SF. Specifically, the sensor value So-L1 is the sensor value So-L1 output from multiple photodiodes 30 of the detection block AAL1, selected from the sensor values ​​So during subframe period SF1.

[0090] Similarly, sensor value So-L2 is the sensor value So-L2 output from multiple photodiodes 30 of detection block AAL2, selected from the sensor value So during subframe period SF2. Sensor value So-R4 is the sensor value So-R4 output from multiple photodiodes 30 of detection block AAR4, selected from the sensor value So during subframe period SF8.

[0091] Returning to Figure 9, the image generation circuit 77 (see Figure 3) generates an image based on the combined data SoA (step ST8).

[0092] As described above, the detection device 1 of this embodiment includes a plurality of photodiodes 30 provided on a substrate 21, a plurality of light-emitting elements 85 arranged opposite the plurality of photodiodes 30, and a translucent mounting substrate 101 arranged between the plurality of photodiodes 30 and the plurality of light-emitting elements 85 for mounting a plurality of objects to be detected 100. The plurality of photodiodes, the mounting substrate, and the plurality of light-emitting elements are arranged in the order of the plurality of photodiodes, the mounting substrate, and the plurality of light-emitting elements 85 in a direction perpendicular to the substrate. Among the plurality of light-emitting elements 85, the light-emitting element 85 corresponding to the photodiode 30 to be detected (for example, light-emitting element 85-1) lights up, and the other light-emitting elements 85 corresponding to the photodiodes 30 that are not to be detected (for example, light-emitting elements 85-2 to 85-8) do not light up, and the photodiode 30 to be detected outputs a sensor value based on the light from the lit light-emitting elements 85. In each subframe period SF, at least the light-emitting elements 85 adjacent in the row and column directions to the lit light-emitting element 85 (for example, light-emitting elements 85-2, 85-5) do not light up.

[0093] Furthermore, in the detection device 1, the photodiodes 30 to be detected (for example, multiple photodiodes 30 of detection block AAL) and the light-emitting elements 85 (for example, light-emitting elements 85-1) corresponding to the photodiodes 30 to be detected are arranged to overlap in a plan view.

[0094] As a result, as shown in Figure 2, the light emitted from the illuminated light-emitting element 85 (e.g., light-emitting element 85-1) is emitted onto the object to be detected 100 that overlaps with the illuminated light-emitting element 85, and is incident on the photodiode 30 of the detection target (e.g., detection block AAL1) that overlaps with the illuminated light-emitting element 85. In this embodiment, the light-emitting elements 85 adjacent to the illuminated light-emitting element 85 in the row and column directions (e.g., light-emitting elements 85-2, 85-5) are not illuminated. Therefore, the object to be detected 100 and the photodiode 30 of the detection target are not emitted from light in an oblique direction from the adjacent light-emitting elements 85 (e.g., light-emitting elements 85-2, 85-5). As a result, the detection device 1 can suppress the emission of light from unintended directions onto the photodiode 30 of the detection target, and can improve the detection accuracy of the detected sensor value So. As a result, blurring of the image generated based on the sensor value So can be suppressed.

[0095] Furthermore, light traveling diagonally from the lit light-emitting element 85 (e.g., light-emitting element 85-1) may also irradiate other objects to be detected 100 that do not overlap with the lit light-emitting element 85, and may also be incident on photodiodes 30 of non-detection targets (e.g., detection block AAL2 to detection block AAR4). In this embodiment, the host IC 70 selects a sensor value So from the detection target photodiode 30 for each subframe period SF. That is, the sensor value So from the detection target photodiode 30 that overlaps with the lit light-emitting element 85 is used to generate the image.

[0096] Furthermore, the host IC 70 deselects the sensor value So from the undetected photodiode 30. In other words, the sensor value So from the undetected photodiode 30 that does not overlap with the illuminated light-emitting element 85 is not used in image generation. As a result, in the detection device 1, the sensor value So output from the photodiode 30 based on light irradiated from an unintended direction is not used in image generation, and the image is generated using combined data SoA generated only from the sensor value So from the detected photodiode 30.

[0097] The detection method shown in Figures 8 to 10 is merely an example and can be modified as appropriate. For example, the order in which the light-emitting elements 85 light up for each subframe period SF can be changed as appropriate. Also, in Figures 8 to 10, one light-emitting element 85 lights up for each subframe period SF, but this is not limited to this. Multiple light-emitting elements 85 may be bundled together and each set of multiple light-emitting elements 85 may light up. Furthermore, the multiple photodiodes 30 and the multiple light-emitting elements 85 are not limited to being arranged in a first and second row, but may be arranged in at least one row. In this case, the multiple light-emitting elements 85 arranged in one row may light up sequentially, and the multiple photodiodes 30 arranged in one row may sequentially output the sensor value So.

[0098] (Second Embodiment) Figure 11 is a schematic plan view showing a detection device according to the second embodiment. In the following description, the same reference numerals are used for components that are the same as those described in the above-described embodiment, and redundant explanations are omitted.

[0099] As shown in Figure 11, the detection device 1A according to the second embodiment includes gate line drive circuits 15A-L, 15A-R, 15B-L, 15B-R and detection control circuits 11A, 11B. The gate line drive circuits 15A-L and 15B-L are provided corresponding to the detection block AAL on the left. The gate line drive circuits 15A-L and 15B-L perform detection operations on the multiple photodiodes 30 of the detection block AAL on the left, during the reset period T1, exposure period T2, and readout period T3 (see Figure 12).

[0100] The gate line drive circuits 15A-R and 15B-R are provided in correspondence with the detection block AAR on the right side. The gate line drive circuits 15A-R and 15B-R perform detection operations on the multiple photodiodes 30 of the detection block AAR on the right side during the reset period T1, exposure period T2, and readout period T3 (see Figure 12).

[0101] The gate line drive circuits 15A-L, 15A-R, 15B-L, and 15B-R operate based on the block selection signals BSL and BSR supplied from the detection control circuit 11A. More specifically, the gate line drive circuits 15A-L, 15A-R, 15B-L, and 15B-R scan for multiple photodiodes 30 corresponding to some detection blocks AAL and AAR (multiple photodiodes 30 to be detected) and stop scanning for multiple photodiodes 30 corresponding to other detection blocks AAL and AAR (multiple photodiodes 30 not to be detected) based on the block selection signals BSL and BSR.

[0102] Furthermore, the detection control circuit 11A receives the detection signal Vdet from the multiple photodiodes 30 of the left detection block AAL and performs predetermined signal processing. The detection control circuit 11B receives the detection signal Vdet from the multiple photodiodes 30 of the right detection block AAR and performs predetermined signal processing. The detection control circuits 11A and 11B are controlled synchronously by the integrated control circuit 71 of the host IC 70.

[0103] Multiple gate lines GL are provided separately in the left detection block AAL and the right detection block AAR. Specifically, the multiple gate lines GL include multiple gate lines GL connected to multiple photodiodes 30 arranged in the first row (first row gate lines GL), and multiple gate lines GL provided separately from the first row gate lines GL and connected to multiple photodiodes 30 arranged in the second row (second row gate lines GL). The first row gate lines GL and the multiple photodiodes 30 arranged in the first row are connected to one of the pair of gate line drive circuits 15A-L, 15B-L. The second row gate lines GL and the multiple photodiodes 30 arranged in the second row are connected to the other of the pair of gate line drive circuits 15A-R, 15B-R.

[0104] With this configuration, the detection device 1A according to the second embodiment can synchronize the multiple photodiodes 30 of the left detection block AAL and the multiple photodiodes 30 of the right detection block AAR, and also drive each of the detection blocks AAL and AAR independently.

[0105] Figure 12 is a schematic explanatory diagram showing the lighting patterns of multiple light-emitting elements and an example of the detection operation of the optical sensor in the detection device according to the second embodiment. Figure 13 is a flowchart showing an example of the detection operation of the detection device according to the second embodiment. Figure 14 is an explanatory diagram for explaining an example of the detection operation of the detection device according to the second embodiment.

[0106] As shown in Figures 12 and 13, the light source device 81 lights up light-emitting elements 85-1 and 85-7 during the subframe period SF1 (step ST11). During the subframe period SF1, the light source device 81 also delights the other light-emitting elements 85-2, 85-3, 85-4, 85-5, 85-6, and 85-8, which are not lit by light-emitting elements 85-1 and 85-7.

[0107] As shown in Figure 14, during subframe period SF1, the illuminated light-emitting element 85-1 and at least adjacent light-emitting elements 85-2 and 85-5 in the row and column directions will not be illuminated. Also, the illuminated light-emitting element 85-7 and at least adjacent light-emitting elements 85-3, 85-6, and 85-8 in the row and column directions will not be illuminated.

[0108] Next, as shown in Figures 12 and 13, the detection control circuit 11A outputs the block selection signal BSL1 to the gate line drive circuits 15A-L and 15B-L during the subframe period SF1. The detection control circuit 11A also outputs the block selection signal BSR3 to the gate line drive circuits 15A-R and 15B-R (step ST12).

[0109] During the subframe period SF1, the optical sensor 10 scans multiple photodiodes 30 of detection block AAL1 using gate line drive circuits 15A-L and 15B-L. Also during the subframe period SF1, the optical sensor 10 scans multiple photodiodes 30 of detection block AAR3 using gate line drive circuits 15A-R and 15B-R (step ST13).

[0110] As shown in Figure 14, during the subframe period SF1, multiple photodiodes 30 of detection blocks AAL2, AAL3, AAL4, AAR1, AAR2, and AAR4, other than detection blocks AAL1 and AAR3, are not scanned.

[0111] In other words, based on the block selection signals BSL1 and BSR3, the light-emitting elements 85-1 and 85-7 that overlap with the multiple photodiodes 30 of the detection blocks AAL1 and AAR3 selected as detection targets are lit. The light-emitting elements 85-2, 85-3, 85-4, 85-5, 85-6, and 85-8 that overlap with the multiple photodiodes 30 of the non-detection targets AAL2, AAL3, AAL4, AAR1, AAR2, and AAR4, which are different from the detection blocks AAL1 and AAR3, are not lit. In this embodiment, only the multiple photodiodes 30 that are to be detected are scanned, and the scanning of the multiple photodiodes 30 that are not to be detected is stopped.

[0112] Next, as shown in Figures 12 and 13, during the transmission period T4, the detection control circuit 11A outputs the sensor value So-L1 from the multiple photodiodes 30 of the detection block AAL1 to the host IC 70. Also, during the transmission period T5, the detection control circuit 11B outputs the sensor value So-R3 from the multiple photodiodes 30 of the detection block AAR3 to the host IC 70. The host IC 70 acquires the sensor values ​​So-L1 and So-R3 from the multiple photodiodes 30 of the detection blocks AAL1 and AAR3 (step ST14). The sensor value storage circuit 72 of the host IC 70 stores the sensor values ​​So-L1 and So-R3 acquired during the subframe period SF1.

[0113] As shown in Figures 12 and 13, the light source device 81 lights up the light-emitting elements 85-2 and 85-8 during the subframe period SF2 (step ST15). In addition, during the subframe period SF2, the light source device 81 delights the other light-emitting elements 85-1, 85-3, 85-4, 85-5, 85-6, and 85-7, other than the light-emitting elements 85-2 and 85-8.

[0114] As shown in Figure 14, during the subframe period SF2, the illuminated light-emitting element 85-2 and at least adjacent light-emitting elements 85-1, 85-3, and 85-6 in the row and column directions will not be illuminated. In addition, the illuminated light-emitting element 85-8 and at least adjacent light-emitting elements 85-4 and 85-7 in the row and column directions will not be illuminated.

[0115] Next, as shown in Figures 12 and 13, the detection control circuit 11A outputs the block selection signal BSL2 to the gate line drive circuits 15A-L and 15B-L during the subframe period SF2. The detection control circuit 11A also outputs the block selection signal BSR4 to the gate line drive circuits 15A-R and 15B-R (step ST16).

[0116] During the subframe period SF2, the optical sensor 10 scans multiple photodiodes 30 of detection block AAL2 using gate line drive circuits 15A-L and 15B-L. Also during the subframe period SF2, the optical sensor 10 scans multiple photodiodes 30 of detection block AAR4 using gate line drive circuits 15A-R and 15B-R (step ST17).

[0117] As shown in Figure 14, during the subframe period SF2, multiple photodiodes 30 of detection blocks AAL1, AAL3, AAL4, AAR1, AAR2, and AAR3, other than detection blocks AAL2 and AAR4, are not scanned.

[0118] In other words, based on the block selection signals BSL2 and BSR4, the light-emitting elements 85-2 and 85-8 that overlap with the multiple photodiodes 30 of the detection blocks AAL2 and AAR4 selected as detection targets will light up. The light-emitting elements 85-1, 85-3, 85-4, 85-5, 85-6, and 85-7 that overlap with the multiple photodiodes 30 of the detection blocks AAL1, AAL3, AAL4, AAR1, AAR2, and AAR3, which are not detection targets and are different from the detection blocks AAL2 and AAR4, will not light up.

[0119] Next, as shown in Figures 12 and 13, during the transmission period T4, the detection control circuit 11A outputs the sensor value So-L2 from the multiple photodiodes 30 of the detection block AAL2 to the host IC 70. Also, during the transmission period T5, the detection control circuit 11B outputs the sensor value So-R4 from the multiple photodiodes 30 of the detection block AAR4 to the host IC 70. The host IC 70 acquires the sensor values ​​So-L2 and So-R4 from the multiple photodiodes 30 of the detection blocks AAL2 and AAR4 (step ST18). The sensor value storage circuit 72 of the host IC 70 stores the sensor values ​​So-L2 and So-R4 acquired during the subframe period SF2.

[0120] As shown in Figures 12 and 13, the light source device 81 lights up the light-emitting elements 85-3 and 85-5 during the subframe period SF3 (step ST19). In addition, during the subframe period SF3, the light source device 81 delights the other light-emitting elements 85-1, 85-2, 85-4, 85-6, 85-7, and 85-8, other than the light-emitting elements 85-3 and 85-5.

[0121] As shown in Figure 14, during subframe period SF3, the illuminated light-emitting element 85-3 and at least adjacent light-emitting elements 85-2, 85-4, and 85-7 in the row and column directions will not be illuminated. Also, the illuminated light-emitting element 85-5 and at least adjacent light-emitting elements 85-1 and 85-6 in the row and column directions will not be illuminated.

[0122] Next, as shown in Figures 12 and 13, the detection control circuit 11A outputs the block selection signal BSL3 to the gate line drive circuits 15A-L and 15B-L during the subframe period SF3. The detection control circuit 11A also outputs the block selection signal BSR1 to the gate line drive circuits 15A-R and 15B-R (step ST20).

[0123] During the subframe period SF3, the optical sensor 10 scans multiple photodiodes 30 of detection block AAL3 using gate line drive circuits 15A-L and 15B-L. Also during the subframe period SF3, the optical sensor 10 scans multiple photodiodes 30 of detection block AAR1 using gate line drive circuits 15A-R and 15B-R (step ST21).

[0124] As shown in Figure 14, during the subframe period SF3, multiple photodiodes 30 of detection blocks AAL1, AAL2, AAL4, AAR2, AAR3, and AAR4, other than detection blocks AAL3 and AAR1, are not scanned.

[0125] In other words, based on the block selection signals BSL3 and BSR1, the light-emitting elements 85-3 and 85-5 that overlap with the multiple photodiodes 30 of the detection blocks AAL3 and AAR1 selected as detection targets will light up. The light-emitting elements 85-1, 85-2, 85-4, 85-6, 85-7, and 85-8 that overlap with the multiple photodiodes 30 of the detection blocks AAL1, AAL2, AAL4, AAR2, AAR3, and AAR4, which are not detection targets and are different from the detection blocks AAL5 and AAR1, will not light up.

[0126] Next, as shown in Figures 12 and 13, during the transmission period T4, the detection control circuit 11A outputs the sensor value So-L3 from the multiple photodiodes 30 of the detection block AAL3 to the host IC 70. Also, during the transmission period T5, the detection control circuit 11B outputs the sensor value So-R1 from the multiple photodiodes 30 of the detection block AAR1 to the host IC 70. The host IC 70 acquires the sensor values ​​So-L3 and So-R1 from the multiple photodiodes 30 of the detection blocks AAL3 and AAR1 (step ST22). The sensor value storage circuit 72 of the host IC 70 stores the sensor values ​​So-L3 and So-R1 acquired during the subframe period SF3.

[0127] As shown in Figures 12 and 13, the light source device 81 lights up the light-emitting elements 85-4 and 85-6 during the subframe period SF4 (step ST23). In addition, during the subframe period SF4, the light source device 81 delights the other light-emitting elements 85-1, 85-2, 85-3, 85-5, 85-7, and 85-8, other than the light-emitting elements 85-4 and 85-6.

[0128] As shown in Figure 14, during subframe period SF4, the illuminated light-emitting element 85-4 and at least adjacent light-emitting elements 85-3 and 85-8 in the row and column directions will not be illuminated. Also, the illuminated light-emitting element 85-6 and at least adjacent light-emitting elements 85-2, 85-5, and 85-7 in the row and column directions will not be illuminated.

[0129] Next, as shown in Figures 12 and 13, the detection control circuit 11A outputs the block selection signal BSL4 to the gate line drive circuits 15A-L and 15B-L during the subframe period SF4. The detection control circuit 11A also outputs the block selection signal BSR2 to the gate line drive circuits 15A-R and 15B-R (step ST24).

[0130] During the subframe period SF4, the optical sensor 10 scans multiple photodiodes 30 of detection block AAL4 using gate line drive circuits 15A-L and 15B-L. Also during the subframe period SF4, the optical sensor 10 scans multiple photodiodes 30 of detection block AAR2 using gate line drive circuits 15A-R and 15B-R (step ST25).

[0131] As shown in Figure 14, during the subframe period SF4, multiple photodiodes 30 of detection blocks AAL1, AAL2, AAL3, AAR1, AAR3, and AAR4 are not scanned, except for detection blocks AAL4 and AAR2.

[0132] In other words, based on the block selection signals BSL4 and BSR2, the light-emitting elements 85-4 and 85-6 that overlap with the multiple photodiodes 30 of the detection blocks AAL4 and AAR2 selected as detection targets will light up. The light-emitting elements 85-1, 85-2, 85-3, 85-5, 85-7, and 85-8 that overlap with the multiple photodiodes 30 of the detection blocks AAL1, AAL2, AAL3, AAR1, AAR3, and AAR4, which are not detection targets and are different from the detection blocks AAL4 and AAR2, will not light up.

[0133] Next, as shown in Figures 12 and 13, during the transmission period T4, the detection control circuit 11A outputs the sensor value So-L4 from the multiple photodiodes 30 of the detection block AAL4 to the host IC 70. Also, during the transmission period T5, the detection control circuit 11B outputs the sensor value So-R2 from the multiple photodiodes 30 of the detection block AAR2 to the host IC 70. The host IC 70 acquires the sensor values ​​So-L4 and So-R2 from the multiple photodiodes 30 of the detection blocks AAL4 and AAR2 (step ST26). The sensor value storage circuit 72 of the host IC 70 stores the sensor values ​​So-L4 and So-R2 acquired during the subframe period SF4.

[0134] The combined data generation circuit 74 (see Figure 3) combines multiple sensor values ​​So acquired during each of the subframe periods SF1 to SF4 (step ST27). As shown in the right-hand figure of Figure 14 (step ST27), the combined data SoA generated by the combined data generation circuit 74 consists of sensor values ​​So-L1, So-L2, So-L3, So-L4, So-R1, So-R2, So-R3, and So-R4.

[0135] The sensor values ​​So-L1, So-L2, So-L3, So-L4, So-R1, So-R2, So-R3, and So-R4 of the combined data SoA are selected from sensor values ​​So acquired during different subframe periods SF. Specifically, sensor values ​​So-L1 and So-R3 are sensor values ​​acquired during subframe period SF1. Sensor values ​​So-L2 and So-R4 are sensor values ​​acquired during subframe period SF2. Sensor values ​​So-L3 and So-R1 are sensor values ​​acquired during subframe period SF3. Sensor values ​​So-L4 and So-R2 are sensor values ​​acquired during subframe period SF4.

[0136] As shown in Figure 13, the image generation circuit 77 (see Figure 3) generates an image based on the combined data SoA (step ST28).

[0137] As described above, the detection device 1A of this embodiment has multiple subframe periods SF obtained by dividing the frame period F into which sensor values ​​So are acquired from each of the multiple photodiodes 30 arranged in the detection region AA. The multiple light-emitting elements 85 light up sequentially for each of the multiple subframe periods SF, and the multiple photodiodes 30 corresponding to the lit light-emitting elements 85 output sensor values ​​So sequentially for each of the multiple subframe periods SF. The detection device 1A has an image generation circuit 77 that synthesizes the sensor values ​​So for each of the multiple subframe periods SF based on the multiple sensor values ​​So output for each subframe period SF and the position information of the multiple photodiodes 30 in the detection region AA to generate a single image.

[0138] Furthermore, any light-emitting element 85 that overlaps with a non-detectable photodiode 30 adjacent to the photodiode 30 being detected will not light up.

[0139] According to this, only the multiple photodiodes 30 that are to be detected and correspond to the illuminated light-emitting element 85 are scanned, and scanning of the multiple photodiodes 30 that are not to be detected is stopped. Light traveling diagonally from the illuminated light-emitting element 85 (for example, light-emitting element 85-1) may irradiate the multiple photodiodes 30 that are to be detected and the multiple photodiodes 30 of other detection blocks AAL and AAR adjacent to them. Even in this case, the multiple photodiodes 30 that are not to be detected are not scanned, so the output of a sensor value So based on diagonal light can be suppressed. Therefore, the detection device 1A of this embodiment can improve detection accuracy.

[0140] Furthermore, in the detection device 1A of this embodiment, the plurality of photodiodes 30 and plurality of light-emitting elements 85 are arranged in at least a first column and a second column. The light-emitting elements 85 arranged in the first column (light-emitting elements 85-1, 85-2, 85-3, 85-4) are lit sequentially, and the photodiodes 30 to be detected among the plurality of photodiodes 30 arranged in the first column output sensor values ​​sequentially. The light-emitting elements 85 arranged in the second column (light-emitting elements 85-5, 85-6, 85-7, 85-8) are lit sequentially, and the photodiodes 30 to be detected among the plurality of photodiodes 30 arranged in the second column output sensor values ​​sequentially. During a predetermined subframe period SF, the rows of light-emitting elements 85 lit in the first column are different from the rows of light-emitting elements 85 lit in the second column, and the rows of the photodiodes 30 to be detected in the first column are different from the rows of the photodiodes 30 to be detected in the second column.

[0141] According to this, it is possible to suppress the light from the light-emitting element 85 that lights up in the first row from irradiating the photodiode 30 that is the target of detection in the second row. Also, it is possible to suppress the light from the light-emitting element 85 that lights up in the second row from irradiating the photodiode 30 that is the target of detection in the first row.

[0142] More specifically, as shown in Figure 14, in any subframe period SF from subframe period SF1 to subframe period SF4, the lighting pattern of the light-emitting elements 85 in each column is set such that the distance between the light-emitting elements 85 lit in the first column and the light-emitting elements 85 lit in the second column is increased. Alternatively, in any subframe period SF, the photodiodes 30 to be detected in each column (detection block AAL, AAR) are set such that the photodiodes 30 to be detected in the first column (detection block AAL) and the photodiodes 30 to be detected in the second column (detection block AAR) are not adjacent in the row, column, or diagonal direction.

[0143] (First variation) Figure 15 is a schematic cross-sectional view showing a detection device according to the first modified example. As shown in Figure 15, the detection device 1B according to the first modified example has an optical filter layer 50 provided between the plurality of photodiodes 30 of the optical sensor 10 and the mounting substrate 101. The optical filter layer 50 is also positioned opposite the plurality of photodiodes 30 of the optical sensor 10.

[0144] The optical filter layer 50 has a plurality of light guides 51 and light-shielding portions 55 provided around the plurality of light guides 51. At least a portion of the light guides 51 is superimposed on the photodiode 30. The light-shielding portions 55 have a higher light absorption rate than the light guides 51. The optical filter layer 50 is an optical element that transmits the component of light irradiated from the light-emitting element 85 that travels in the third direction Dz toward the photodiode 30. The optical filter layer 50 is also called a collimated aperture or collimator.

[0145] In the first modified example, since a light filter layer 50 is provided, light traveling diagonally from the light-emitting element 85 is blocked by the light-shielding section 55. This prevents unintended light from illuminating multiple photodiodes 30 (multiple photodiodes 30 that are not to be detected) in areas that do not overlap with the lit light-emitting element 85.

[0146] The optical filter layer 50 can have any configuration as long as it can transmit the component of the light emitted from the light-emitting element 85 that travels in the third direction Dz. For example, the multiple light guide paths 51 may be formed in a columnar shape or in a wall-like (louver) shape extending in a predetermined direction.

[0147] (Second variation) Figure 16 is a schematic plan view showing a detection device according to the second modified example. In the first and second embodiments described above, eight light-emitting elements 85 are arranged in the first and second columns, and the detection area AA is divided into multiple detection blocks AAL and AAR, corresponding to each of the eight light-emitting elements 85. In the first and second embodiments, the multiple light-emitting elements 85 and the multiple detection blocks AAL and AAR are arranged in a 4x2 configuration. However, the number and arrangement of the multiple light-emitting elements 85 and the multiple detection blocks AAL and AAR can be changed as appropriate.

[0148] As shown in Figure 16, in the detection device 1C according to the second modified example, the light source device 81 has four light-emitting elements 85-1, 85-2, 85-3, and 85-4. The optical sensor 10 also has four detection blocks AAL1, AAL2, AAR1, and AAR2.

[0149] Of the multiple light-emitting elements 85, elements 85-1 and 85-2 are arranged in the second direction Dy (column direction). Elements 85-3 and 85-4 are also arranged in the second direction Dy (column direction) and are positioned adjacent to the right side (first direction Dx) of elements 85-1 and 85-2, respectively. In the second modified example, elements 85-1 and 85-2 are multiple light-emitting elements 85 in the first column, and elements 85-3 and 85-4 are multiple light-emitting elements 85 in the second column.

[0150] The detection area AA of the optical sensor 10 is divided into detection blocks AAL1, AAL2, AAR1, and AAR2, corresponding to each of the multiple light-emitting elements 85-1, 85-2, 85-3, and 85-4. The multiple photodiodes 30 are arranged in a matrix within each of the detection blocks AAL1, AAL2, AAR1, and AAR2.

[0151] Detection blocks AAL1 and AAL2 are arranged in the second direction Dy (column direction). Detection blocks AAR1 and AAR2 are arranged in the second direction Dy (column direction) and are positioned adjacent to the right side (first direction Dx) of detection blocks AAL1 and AAL2, respectively.

[0152] Detection blocks AAL1 and AAL2 are arranged in accordance with the multiple light-emitting elements 85 arranged in the first column. Similarly, detection blocks AAR1 and AAR2 are arranged in accordance with the multiple light-emitting elements 85 arranged in the second column. In a second modification, the multiple photodiodes 30 of detection blocks AAL1 and AAL2 may be represented as the multiple photodiodes 30 arranged in the first column. Furthermore, the multiple photodiodes 30 of detection blocks AAR1 and AAR2 may be represented as the multiple photodiodes 30 arranged in the second column.

[0153] Figure 17 is an explanatory diagram schematically showing the lighting patterns of multiple light-emitting elements and an example of the detection operation of the optical sensor in the detection device according to the second modified example. Figure 18 is an explanatory diagram for explaining an example of the detection operation of the detection device according to the second modified example.

[0154] As shown in Figures 17 and 18, the detection device 1C divides one frame period F into two subframe periods SF1 and SF2, and controls the illumination and de-illumination of multiple light-emitting elements 85 for each subframe period SF1 and SF2, as well as controlling the detection of multiple photodiodes 30.

[0155] As shown in Figures 17 and 18, the light source device 81 illuminates light-emitting elements 85-1 and 85-4 during the subframe period SF1. The light source device 81 also deactivates the other light-emitting elements 85-2 and 85-3 during the subframe period SF1, in addition to those 85-1 and 85-4.

[0156] As shown in Figure 18, during subframe period SF1, the illuminated light-emitting element 85-1 and at least the adjacent light-emitting elements 85-2 and 85-3 in the row and column directions will not be illuminated. Also, the illuminated light-emitting element 85-4 and at least the adjacent light-emitting elements 85-2 and 85-3 in the row and column directions will not be illuminated.

[0157] Next, as shown in Figures 17 and 18, the detection control circuit 11A outputs the block selection signal BSL1 to the gate line drive circuits 15A-L and 15B-L during the subframe period SF1. The detection control circuit 11A also outputs the block selection signal BSR2 to the gate line drive circuits 15A-R and 15B-R.

[0158] As shown in Figure 18, the optical sensor 10 scans multiple photodiodes 30 of detection block AAL1 during the subframe period SF1 using gate line drive circuits 15A-L and 15B-L. The optical sensor 10 also scans multiple photodiodes 30 of detection block AAR2 during the subframe period SF1 using gate line drive circuits 15A-R and 15B-R.

[0159] During subframe period SF1, multiple photodiodes 30 of detection blocks AAL2 and AAR1 are not scanned, except for detection blocks AAL1 and AAR2.

[0160] In other words, based on the block selection signals BSL1 and BSR2, the light-emitting elements 85-1 and 85-4 that overlap with the multiple photodiodes 30 of the detection blocks AAL1 and AAR2 selected as detection targets light up. The light-emitting elements 85-2 and 85-3 that overlap with the multiple photodiodes 30 of the detection blocks AAL2 and AAR1, which are not detection targets and are different from the detection blocks AAL1 and AAR2, do not light up.

[0161] Next, as shown in Figure 17, during the transmission period T4, the detection control circuit 11A outputs the sensor value So-L1 from the multiple photodiodes 30 of the detection block AAL1 to the host IC 70. Also, during the transmission period T5, the detection control circuit 11B outputs the sensor value So-R2 from the multiple photodiodes 30 of the detection block AAR2 to the host IC 70. The host IC 70 acquires the sensor values ​​So-L1 and So-R2 from the multiple photodiodes 30 of the detection blocks AAL1 and AAR2. The sensor value storage circuit 72 of the host IC 70 stores the sensor values ​​So-L1 and So-R2 acquired during the subframe period SF1.

[0162] Next, during the subframe period SF2, the light source device 81 lights up the light-emitting elements 85-2 and 85-3. Also during the subframe period SF2, the light source device 81 delights the other light-emitting elements 85-1 and 85-4, which are not lit up.

[0163] As shown in Figure 18, during the subframe period SF2, the illuminated light-emitting element 85-2 and at least the adjacent light-emitting elements 85-1 and 85-4 in the row and column directions will not be illuminated. Also, the illuminated light-emitting element 85-3 and at least the adjacent light-emitting elements 85-1 and 85-4 in the row and column directions will not be illuminated.

[0164] Next, the detection control circuit 11A outputs the block selection signal BSL2 to the gate line drive circuits 15A-L and 15B-L during the subframe period SF2. The detection control circuit 11A also outputs the block selection signal BSR1 to the gate line drive circuits 15A-R and 15B-R.

[0165] As shown in Figure 18, the optical sensor 10 scans multiple photodiodes 30 of detection block AAL2 using gate line drive circuits 15A-L and 15B-L during the subframe period SF2. The optical sensor 10 also scans multiple photodiodes 30 of detection block AAR1 using gate line drive circuits 15A-R and 15B-R during the subframe period SF2.

[0166] During subframe period SF2, multiple photodiodes 30 of detection blocks AAL1 and AAR2 are not scanned, except for detection blocks AAL2 and AAR2.

[0167] In other words, based on the block selection signals BSL2 and BSR1, the light-emitting elements 85-2 and 85-3 that overlap with the multiple photodiodes 30 of the detection blocks AAL2 and AAR1 selected as detection targets are lit. The light-emitting elements 85-1 and 85-4 that overlap with the multiple photodiodes 30 of the detection blocks AAL1 and AAR2 that are not detection targets and are different from the detection blocks AAL2 and AAR1 are not lit.

[0168] Next, as shown in Figure 17, during the transmission period T4, the detection control circuit 11A outputs the sensor value So-L2 from the multiple photodiodes 30 of the detection block AAL2 to the host IC 70. Also, during the transmission period T5, the detection control circuit 11B outputs the sensor value So-R1 from the multiple photodiodes 30 of the detection block AAR1 to the host IC 70. The host IC 70 acquires the sensor values ​​So-L2 and So-R1 from the multiple photodiodes 30 of the detection blocks AAL2 and AAR1. The sensor value storage circuit 72 of the host IC 70 stores the sensor values ​​So-L2 and So-R1 acquired during the subframe period SF2.

[0169] As shown in Figure 18, the combined data generation circuit 74 (see Figure 3) combines multiple sensor values ​​So acquired during subframe periods SF1 and SF2, respectively. The combined data SoA generated by the combined data generation circuit 74 consists of sensor values ​​So-L1, So-L2, So-R1, and So-R2.

[0170] Specifically, sensor values ​​So-L1 and So-R2 are sensor values ​​acquired during subframe period SF1. Sensor values ​​So-L2 and So-R1 are sensor values ​​acquired during subframe period SF2. The image generation circuit 77 (see Figure 3) generates an image based on the combined data SoA.

[0171] In the second modified example, although the light-emitting elements 85 that light up during the same subframe period SF (e.g., light-emitting elements 85-1, 85-4) are adjacent to each other in an oblique direction, the light-emitting elements 85 adjacent to the lit-up light-emitting element 85 in at least the row and column directions remain unlit. As a result, similar to the first and second embodiments described above, the light-emitting elements 85 adjacent to the lit-up light-emitting element 85 in the row and column directions (e.g., light-emitting elements 85-2, 85-3) remain unlit, and therefore, the object to be detected 100 is not illuminated by oblique light from the adjacent light-emitting elements 85 (e.g., light-emitting elements 85-2, 85-3).

[0172] In the second modification, an example was shown in which the light-emitting elements 85 are arranged in a 2x2 grid, and the multiple detection blocks AAL and AAR are also divided into a 2x2 grid. However, this is not the only option, and the number and arrangement of the light-emitting elements 85, and the number and arrangement of the multiple detection blocks AAL and AAR can be changed as appropriate.

[0173] Although preferred embodiments of the present invention have been described above, the present invention is not limited to these embodiments. The contents disclosed in the embodiments are merely examples, and various modifications are possible without departing from the spirit of the present invention. Appropriate modifications made without departing from the spirit of the present invention naturally fall within the technical scope of the present invention. At least one of various omissions, substitutions, and modifications of components can be made without departing from the gist of each of the embodiments and modifications described above. [Explanation of Symbols]

[0174] 1, 1A, 1B, 1C detection devices 2. 84 Array Substrate 3 sensor pixels 10 Optical sensors 11, 11A, 11B detection control circuit 12. Light-emitting element control circuit 15A, 15A-L, 15A-R, 15B, 15B-L, 15B-R, 17A, 17B Gate Line Drive Circuit 21 circuit boards 30 Photodiodes 70 Host IC 71 Integrated Control Circuit 72 Sensor value storage circuit 73 Sensor Value Selection Circuit 74 Combined Data Generation Circuit 77 Image generation circuit 81 Light source device 85, 85-1, 85-2 Light-emitting element 100 detected objects 101 Mounted board 102 culture medium AAL, AAL1, AAL2, AAL3, AAL4, AAR, AAR1, AAR2, AAR3, AAR4 detection block So, So-L1, So-L2, So-L3, So-L4, So-R1, So-R2, So-R3, So-R4 sensor value

Claims

1. Multiple photodiodes provided on the substrate, Multiple photodiodes and multiple light-emitting elements arranged opposite each other, It comprises a translucent mounting substrate for mounting multiple objects to be detected, which is disposed between a plurality of photodiodes and a plurality of light-emitting elements, In a direction perpendicular to the substrate, a plurality of photodiodes, the mounting substrate, and a plurality of light-emitting elements are arranged in that order. Among the multiple light-emitting elements, the light-emitting element corresponding to the photodiode to be detected lights up, and the other light-emitting elements corresponding to the photodiode not to be detected remain unlit. The photodiode to be detected outputs a sensor value based on the light from the illuminated light-emitting element, With respect to the illuminated light-emitting element, at least adjacent light-emitting elements in the row and column directions will not be illuminated. The detection region has multiple subframe periods, which are obtained by dividing the frame period for acquiring sensor values ​​from each of the multiple photodiodes arranged in the detection region. Multiple of the aforementioned light-emitting elements are lit sequentially for each of the multiple aforementioned subframe periods. The photodiode that is the target of detection, corresponding to the lit light-emitting element, sequentially outputs the sensor value for each subframe period. The image generation circuit has multiple sensor values ​​output for each subframe period and position information of multiple photodiodes in the detection region, and combines the sensor values ​​for each of the multiple subframe periods to generate a single image. Detection device.

2. The photodiode to be detected and the light-emitting element corresponding to the photodiode to be detected are arranged to overlap in a plan view. The detection device according to claim 1.

3. Multiple gate lines, Multiple signal lines, A gate line drive circuit connected to multiple gate lines, It has a detection circuit connected to a plurality of the aforementioned signal lines, Multiple photodiodes are arranged in a matrix in the detection area of ​​the substrate and are connected to multiple gate lines and multiple signal lines. The detection device according to claim 1.

4. The gate line drive circuit sequentially supplies gate drive signals to the multiple gate lines. Based on the gate drive signal, the photodiode to be detected, selected, sequentially outputs sensor values. The detection device according to claim 3.

5. The plurality of photodiodes and the plurality of light-emitting elements are arranged in at least one row, and the plurality of photodiodes arranged in the row sequentially output sensor values. The detection device according to claim 1.

6. A plurality of photodiodes provided on a substrate, Multiple photodiodes and multiple light-emitting elements arranged opposite each other, It comprises a translucent mounting substrate for mounting multiple objects to be detected, which is disposed between a plurality of photodiodes and a plurality of light-emitting elements, In a direction perpendicular to the substrate, a plurality of photodiodes, the mounting substrate, and a plurality of light-emitting elements are arranged in that order. Among the multiple light-emitting elements, the light-emitting element corresponding to the photodiode to be detected lights up, and the other light-emitting elements corresponding to the photodiode not to be detected remain unlit. The photodiode to be detected outputs a sensor value based on the light from the illuminated light-emitting element, With respect to the illuminated light-emitting element, at least adjacent light-emitting elements in the row and column directions will not be illuminated. The plurality of photodiodes and the plurality of light-emitting elements are arranged in at least a first row and a second row. The light-emitting elements arranged in the first row are lit sequentially, and the photodiode to be detected among the plurality of photodiodes arranged in the first row sequentially outputs sensor values. The light-emitting elements arranged in the second row are lit sequentially, and the photodiode being detected among the plurality of photodiodes arranged in the second row sequentially outputs sensor values. Within a predetermined period, the rows of the light-emitting elements that light up in the first column are different from the rows of the light-emitting elements that light up in the second column, and the rows of the photodiodes to be detected in the first column are different from the rows of the photodiodes to be detected in the second column. Detection device.

7. Multiple gate lines, Multiple signal lines, It has a pair of gate line drive circuits connected to a plurality of the gate lines, The plurality of gate lines include a plurality of first-row gate lines connected to a plurality of photodiodes arranged in the first row, and a plurality of second-row gate lines provided at a distance from the plurality of first-row gate lines and connected to a plurality of photodiodes arranged in the second row, Multiple gate lines in the first row are connected to one of the pair of gate line drive circuits. Multiple gate lines in the second row are connected to the other gate line drive circuit of the pair of gate line drive circuits. The detection device according to claim 6.

8. The light-emitting element that overlaps with the photodiode to be detected and the non-detection photodiode adjacent to it will not light up. The detection device according to claim 1.

9. The photodiode has multiple photodiodes and a light filter layer provided between them and the mounting substrate. The optical filter layer includes a plurality of light guides superimposed on the photodiode, and a light-shielding portion that has a higher light absorption rate than the light guides. The detection device according to claim 1.

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