Semiconductor devices, inverter circuits, drive systems, vehicles, and elevators.
The semiconductor device with a silicon carbide layer and integrated SBD diode addresses reliability and surge current issues in MOSFETs, enhancing performance and durability.
JP7864600B2Active Publication Date: 2026-05-25KK TOSHIBA
Patent Information
- Application Number
- JP2022139053
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- Filing Date
- 2022-09-01
- Publication Date
- 2026-05-25
- Estimated Expiration
- 2042-09-01
AI Technical Summary
Technical Problem
Silicon carbide MOSFETs face reliability issues due to stacking fault growth caused by freewheeling current, leading to increased on-resistance, and are vulnerable to surge currents that can cause heat generation and potential destruction.
Method used
A semiconductor device design incorporating a silicon carbide layer with specific transistor and diode regions, including a unipolar Schottky Barrier Diode (SBD) as an internal diode, enhances surge current withstand capacity by optimizing electrode contact areas and configurations.
Benefits of technology
The design improves the reliability and surge current withstand capacity of silicon carbide MOSFETs, reducing stacking faults and preventing heat-related damage.
✦ Generated by Eureka AI based on patent content.
Smart Images
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Abstract
To provide a semiconductor device capable of improving a surge current tolerance.SOLUTION: A semiconductor device according to an embodiment includes a semiconductor chip having a transistor region and a diode region, and a conductor. The semiconductor chip includes a first electrode, a second electrode, a silicon carbide layer between the first electrode and the second electrode, and a gate electrode. The first electrode includes a first region in the transistor region and a second region in the diode region. A first contact area between the conductor and the first region is larger than a second contact area between the conductor and the second region.SELECTED DRAWING: Figure 2
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Citation Information
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