Semiconductor devices, inverter circuits, drive systems, vehicles, and elevators.

The semiconductor device with a silicon carbide layer and integrated SBD diode addresses reliability and surge current issues in MOSFETs, enhancing performance and durability.

JP7864600B2Active Publication Date: 2026-05-25KK TOSHIBA
View PDF 5 Cites 0 Cited by

Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
KK TOSHIBA
Filing Date
2022-09-01
Publication Date
2026-05-25

AI Technical Summary

Technical Problem

Silicon carbide MOSFETs face reliability issues due to stacking fault growth caused by freewheeling current, leading to increased on-resistance, and are vulnerable to surge currents that can cause heat generation and potential destruction.

Method used

A semiconductor device design incorporating a silicon carbide layer with specific transistor and diode regions, including a unipolar Schottky Barrier Diode (SBD) as an internal diode, enhances surge current withstand capacity by optimizing electrode contact areas and configurations.

Benefits of technology

The design improves the reliability and surge current withstand capacity of silicon carbide MOSFETs, reducing stacking faults and preventing heat-related damage.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure 0007864600000001
    Figure 0007864600000001
  • Figure 0007864600000002
    Figure 0007864600000002
  • Figure 0007864600000003
    Figure 0007864600000003
Patent Text Reader

Abstract

To provide a semiconductor device capable of improving a surge current tolerance.SOLUTION: A semiconductor device according to an embodiment includes a semiconductor chip having a transistor region and a diode region, and a conductor. The semiconductor chip includes a first electrode, a second electrode, a silicon carbide layer between the first electrode and the second electrode, and a gate electrode. The first electrode includes a first region in the transistor region and a second region in the diode region. A first contact area between the conductor and the first region is larger than a second contact area between the conductor and the second region.SELECTED DRAWING: Figure 2
Need to check novelty before this filing date? Find Prior Art