Semiconductor device and method for manufacturing a semiconductor device

Abstract

To prevent a reduction in quality in association with connection of a semiconductor device through a conductor layer.SOLUTION: A semiconductor module 1 comprises a conductor layer 21, an insulating plate 22 on the conductor layer 21, a circuit pattern layer 23 on the insulating plate 22, and a semiconductor chip 70 on the circuit pattern layer 23. The conductor layer 21 has a first through hole 21a. The insulating plate 22 has a second through hole 22a located at a portion facing the first through hole 21a and having an opening size larger than that of the first through hole. The circuit pattern layer 23 has an opening 23a located at a portion facing the second through hole 22a and having an opening size larger than the second through hole. In connection to a coolant 90, a heat transfer medium 100 is provided between the conductor layer 21 and the coolant 90, and a screw member 120A inserted into the opening 23a, second through hole 22a, and first through hole 21a and screwed with a screw attachment hole 91 presses the periphery of the first through hole 21a of the conductor layer 21 inside the second through hole 22a toward the coolant 90.SELECTED DRAWING: Figure 6

Description

Technical Field

[0001] The present invention relates to a semiconductor device and a method for manufacturing the same.

Background Art

[0002] In a resin-sealed semiconductor device having a metal-insulated plate having a metal base, an insulating layer thereon, and a conductive pattern thereon, an attachment hole for screwing to an external fin is provided in a part of the metal-insulated plate, a semiconductor chip is mounted on the conductive pattern of the metal-insulated plate, and the mounting side surface is externally coated with a resin material, a technique is known in which a hole having a diameter larger than that of the attachment hole and reaching the attachment hole of the metal-insulated plate is provided in the resin material (Patent Document 1).

[0003] Further, in an electronic device including a header to which a pellet on which a transistor circuit is formed is bonded, and a resin-sealed package composed of a sealing portion on the upper surface and an insulating plate portion on the lower surface of the header, mounting holes penetrating through the resin-sealed package and the header are opened, and a self-tapping screw member is inserted into the mounting holes and screwed into a heat sink or the like to fix the electronic device (Patent Document 2).

[0004] Further, an insulating circuit board in which a metal layer is provided on one surface and a circuit layer to which a semiconductor chip is joined is provided on the other surface, and the one surface is warped into a concave curved surface shape is placed via grease so that the concave curved surface-shaped surface faces the contact surface of the heat sink, and a screw is inserted through a through hole drilled in the most protruding portion of the insulating circuit board and fastened to the female screw portion of the heat sink to press the circuit layer of the most protruding portion and press the insulating circuit board against the contact surface of the heat sink (Patent Document 3).

[0005] Furthermore, a technique is known for fixing a circuit device having an insulating layer covering the entire upper surface of a circuit board, a conductive pattern formed on the surface of the insulating layer, semiconductor elements fixed to predetermined locations thereon, and a sealing resin that seals the semiconductor elements so that a part of the upper surface of the circuit board is exposed, to a heat sink by inserting a screw into a through hole provided in the exposed part and pressing it (Patent Documents 4, 5). Here, a technique is known in which, when pressing, the head of the screw inserted into the through hole is brought into contact with the insulating layer remaining in the exposed area of ​​the circuit board exposed from the sealing resin, or into contact with the insulating layer or conductive pattern remaining in an annular shape surrounding the through hole in the exposed area, or into contact with a removed area where the insulating layer and conductive pattern have been removed from the entire exposed area (Patent Documents 4, 5).

[0006] Furthermore, a technique is known in which a heat sink fin is fastened to a power semiconductor module, which is made of an insulating substrate with copper foil attached to its front and back surfaces and a semiconductor chip mounted thereon, molded with epoxy resin material, has a through hole in the center, a bolt is inserted through the through hole, and the heat sink fin is fastened to the power semiconductor module (Patent Document 6).

[0007] Furthermore, a technique is known in which a semiconductor device comprising a conductive patterned insulating substrate, a semiconductor chip mounted thereon, a beam portion provided opposite the conductive patterned insulating substrate, and an elastic sealing resin is provided with a through hole in the center, a screw is inserted through the through hole, and the semiconductor device is attached to a cooling body (Patent Document 7). [Prior art documents] [Patent Documents]

[0008] [Patent Document 1] Japanese Patent Application Publication No. 62-88347 [Patent Document 2] Japanese Unexamined Patent Publication No. 1261 / 1986 [Patent Document 3] Japanese Patent Publication No. 2004-288828 [Patent Document 4] Japanese Patent Publication No. 2010-10568 [Patent Document 5] Japanese Patent Publication No. 2010-34346 [Patent Document 6] International Publication No. 2013 / 146212 brochure [Patent Document 7] International Publication No. 2014 / 013883 Brochure [Overview of the project] [Problems that the invention aims to solve]

[0009] By the way, the conductor layer and the conductor layer A semiconductor device comprising an insulating circuit board having an insulating plate and a circuit pattern layer on the insulating plate, with a semiconductor chip mounted on the circuit pattern layer, is known to be connected to a cooling body such as a heat dissipation base using bonding materials such as sintered material or solder. For example, a sintered material such as sintered silver or sintered copper is placed between the conductor layer of the insulating circuit board and the cooling body, and heating and pressurizing are performed to connect the conductor layer and the cooling body with the sintered material. Alternatively, solder is placed between the conductor layer of the insulating circuit board and the cooling body, and heating is performed to connect the conductor layer and the cooling body with the solder.

[0010] However, in this method of connecting the conductive layer of an insulating circuit board to a cooling body using bonding materials such as sintered material or solder, depending on the configuration of the semiconductor device including the insulating circuit board, the heating and pressurizing performed during connection may cause remelting of the bonding material between the circuit pattern layer of the insulating circuit board and the semiconductor chip mounted thereon, damage to the components of the semiconductor device, or separation of components, potentially degrading the quality of the semiconductor device.

[0011] In one aspect, the present invention aims to suppress the degradation of quality associated with connections via the conductive layer of a semiconductor device. [Means for solving the problem]

[0012] In one aspect, a semiconductor device includes a conductor layer having a first through hole, an insulating board disposed on the conductor layer and having a second through hole with an opening size larger than that of the first through hole at a location facing the first through hole, a circuit pattern layer disposed on the insulating board and having an opening with an opening size larger than that of the second through hole at a location facing the second through hole, and a semiconductor chip mounted on the circuit pattern layer. A sealing resin that seals the circuit pattern layer and the semiconductor chip, and has a third through-hole with an opening size larger than the first through-hole and smaller than the second through-hole at a location opposite to the first through-hole, A semiconductor device including the above is provided.

[0013] Also, in one aspect, a method for manufacturing a semiconductor device includes the steps of preparing an insulating circuit board including a conductor layer having a first through hole, an insulating board disposed on the conductor layer and having a second through hole with an opening size larger than that of the first through hole at a location facing the first through hole, and a circuit pattern layer disposed on the insulating board and having an opening with an opening size larger than that of the second through hole at a location facing the second through hole, and mounting a semiconductor chip on the circuit pattern layer. A step of sealing the circuit pattern layer and the semiconductor chip, and forming a sealing resin having a third through-hole with an opening size larger than the first through-hole and smaller than the second through-hole at a location opposite the first through-hole, A method for manufacturing a semiconductor device including the above is provided.

Advantages of the Invention

[0014] On one side, it becomes possible to suppress a decrease in quality associated with connection through the conductor layer of the semiconductor device.

Brief Description of the Drawings

[0015] [Figure 1] It is a diagram for explaining an example of a semiconductor module according to the first embodiment. [Figure 2] It is a diagram for explaining an example of an insulating circuit board according to the first embodiment. [Figure 3] It is an exploded view of each layer of an example of an insulating circuit board according to the first embodiment. [Figure 4] It is a diagram showing a configuration example of a semiconductor module according to the first embodiment. [Figure 5] It is a diagram (part 1) for explaining an example of a semiconductor device according to the second embodiment. [Figure 6] It is a diagram (part 2) for explaining an example of a semiconductor device according to the second embodiment. [Figure 7] FIG. (1) for explaining an example of a semiconductor device according to the third embodiment. [Figure 8] FIG. (2) for explaining an example of a semiconductor device according to the third embodiment. [Figure 9] FIG. (1) for explaining an example of a semiconductor device according to the fourth embodiment. [Figure 10] FIG. (2) for explaining an example of a semiconductor device according to the fourth embodiment. [Figure 11] FIG. for explaining an example of a semiconductor module according to the fifth embodiment. [Figure 12] FIG. for explaining an example of a semiconductor device according to the fifth embodiment. [Figure 13] FIG. for explaining an example of a manufacturing method of a semiconductor device according to the sixth embodiment.

BEST MODE FOR CARRYING OUT THE INVENTION

[0016] [First Embodiment] FIG. 1 is a diagram for explaining an example of a semiconductor module according to the first embodiment. FIG. 1(A) schematically shows a plan view of a main part of an example of the semiconductor module. FIG. 1(B) schematically shows a side view of a main part of an example of the semiconductor module. FIG. 1(C) schematically shows a cross-sectional view of a main part of an example of the semiconductor module. FIG. 1(C) is a cross-sectional schematic view taken along the line I-I of FIG. 1(A).

[0017] The semiconductor module (also called a "semiconductor device") 1 shown in Figures 1(A) to 1(C) is an example of a 2-in-1 type semiconductor module. The semiconductor module 1 includes a sealing resin 10 and an insulating circuit board 20 provided inside the sealing resin 10. The sealing resin 10 is made of a resin material such as epoxy resin. The sealing resin 10 may contain an insulating filler such as silica. A semiconductor chip 70 is mounted on the insulating circuit board 20 using a bonding material 140 such as sintered material or solder, and the semiconductor chip 70 is connected using conductive members 80 such as wires. A positive (P) terminal 30, a negative (N) terminal 40, an output terminal 50, and a control terminal 60 are further connected to the insulating circuit board 20. One end of the P terminal 30, N terminal 40, output terminal 50, and control terminal 60 is provided inside the sealing resin 10 and connected to a predetermined part of the insulating circuit board 20, while the other end is brought out to the outside of the sealing resin 10 and used for external connection of the semiconductor module 1.

[0018] As shown in Figure 1(C), the insulated circuit board 20 includes a conductor layer 21, an insulating plate 22 disposed on the conductor layer 21, and a circuit pattern layer 23 disposed on the insulating plate 22. The conductor layer 21 is made of a material with good thermal conductivity, such as a metal material such as copper. The insulating plate 22 is made of a material with good thermal conductivity and insulation properties, such as alumina, composite ceramics mainly composed of alumina, aluminum nitride, silicon nitride, or other ceramic materials. In addition, a resin material may be used for the insulating plate 22. The circuit pattern layer 23 is made of a material with good conductivity, such as a metal material such as copper. The circuit pattern layer 23 is provided in a predetermined pattern shape so as to form a predetermined circuit of the semiconductor module 1 together with the semiconductor chip 70 mounted on the insulated circuit board 20 and the connected P terminal 30, N terminal 40, output terminal 50, and control terminal 60. Such an insulating circuit board 20, which includes a conductor layer 21, an insulating plate 22, and a circuit pattern layer 23, can be made of materials such as a DCB (Direct Copper Bonding) substrate or an AMB (Active Metal Brazed) substrate.

[0019] The conductor layer 21 of the insulating circuit board 20 has a first through-hole 21a. The insulating plate 22 placed on the conductor layer 21 has a second through-hole 22a with a larger opening size than the first through-hole 21a at a location opposite to the first through-hole 21a of the conductor layer 21. The circuit pattern layer 23 placed on the insulating plate 22 has an opening 23a with a larger opening size than the second through-hole 22a at a location opposite to the second through-hole 22a of the insulating plate 22.

[0020] The sealing resin 10 is provided to seal the circuit pattern layer 23 of the insulating circuit board 20 (and the semiconductor chip 70 etc. mounted thereon). The sealing resin 10 is provided so that the main surface of the conductor layer 21 of the insulating circuit board 20 (the main surface opposite to the insulating plate 22 side) is exposed. The sealing resin 10 is provided with a third through-hole 10a with an opening size larger than the first through-hole 21a, located opposite the first through-hole 21a of the conductor layer 21 (and the second through-hole 22a of the insulating plate 22 and the opening 23a of the circuit pattern layer 23). The opening size of the third through-hole 10a of the sealing resin 10 is smaller than the opening 23a of the circuit pattern layer 23, or smaller than the second through-hole 22a of the insulating plate 22. Figures 1(A) and 1(C) illustrate, as an example, a third through-hole 10a with an opening size smaller than the second through-hole 22a.

[0021] The first through-hole 21a, the second through-hole 22a, and the opening 23a of the insulating circuit board 20, and the third through-hole 10a of the sealing resin 10 are provided, for example, so as to be located in the central part of the semiconductor module 1. The insulating circuit board 20 used in the semiconductor module 1 described above will be further explained with reference to Figures 2 and 3.

[0022] Figure 2 illustrates an example of an insulating circuit board according to the first embodiment. Figure 2(A) schematically shows a plan view of the main part of the example insulating circuit board. Figures 2(B) and 2(C) schematically show cross-sectional views of the main part of the example insulating circuit board. Figure 2(B) is a schematic cross-sectional view of section II-II of Figure 2(A). Figure 2(C) is an enlarged cross-sectional view of section P2 of Figure 2(B).

[0023] Furthermore, Figure 3 shows exploded views of each layer of an example of an insulating circuit board according to the first embodiment. Figure 3(A) schematically shows an exploded plan view of the main parts of the circuit pattern layer. Figure 3(B) schematically shows an exploded plan view of the main parts of the insulating plate. Figure 3(C) schematically shows an exploded plan view of the main parts of the conductor layer.

[0024] As shown in Figures 2(A) to 2(C), the insulated circuit board 20 includes a conductor layer 21, an insulating plate 22 on the conductor layer 21, and a circuit pattern layer 23 on the insulating plate 22. The conductor layer 21 is provided with a first through-hole 21a having an opening size of diameter D1, as shown in Figures 2(A) to 2(C) and 3(C). The insulating plate 22 is provided with a second through-hole 22a having an opening size of diameter D2, which is larger than the first through-hole 21a of the conductor layer 21, as shown in Figures 2(A) to 2(C) and 3(B). The circuit pattern layer 23 is provided with an opening 23a having an opening size of diameter D3, which is larger than the second through-hole 22a of the insulating plate 22, as shown in Figures 2(A) to 2(C) and 3(A).

[0025] As shown in Figures 2(A) to 2(C), the first through-hole 21a of the conductor layer 21 is provided so as to be contained within the second through-hole 22a of the insulating plate 22 in both plan and cross-sectional views, and a terrace region 21c of the conductor layer 21 exists between the inner edge 21b of the first through-hole 21a and the inner edge 22b of the second through-hole 22a. The second through-hole 22a of the insulating plate 22 (and the first through-hole 21a of the conductor layer 21) is provided so as to be contained within the opening 23a of the circuit pattern layer 23 in both plan and cross-sectional views, as shown in Figures 2(A) to 2(C), and a terrace region 22c of the insulating plate 22 exists between the inner edge 22b of the second through-hole 22a and the inner edge 23b of the opening 23a.

[0026] The diameter D1 of the first through-hole 21a provided in the conductor layer 21 of the insulating circuit board 20 is set to a size such that, for example, the threaded tip of a screw member used to connect the insulating circuit board 20 and the cooling body as described later is inserted through the hole, but the head on the opposite side is not inserted.

[0027] Components such as the semiconductor chip 70 described above are mounted on a predetermined location on the circuit pattern layer 23 of the insulating circuit board 20 as described above. Figure 4 is a diagram showing an example configuration of a semiconductor module according to the first embodiment. Figure 4 schematically shows a plan view of the main parts of an example of the internal configuration of a semiconductor module.

[0028] In Figure 4, a portion of the encapsulating resin 10 of the semiconductor module 1 is omitted from the illustration, and a schematic example of the internal structure of the encapsulating resin 10 is shown. The semiconductor module 1 shown in Figure 4 is an example of a semiconductor module having a 2-in-1 type configuration. The circuit pattern layer 23 of the insulating circuit board 20 includes a first pattern section 23d, a second pattern section 23e, a third pattern section 23f, a fourth pattern section 23h, and a fifth pattern section 23i.

[0029] On the first pattern portion 23d of the circuit pattern layer 23, semiconductor chips 70 constituting the upper arm, in this example, four semiconductor chips 71, are mounted via bonding materials such as sintered material or solder (not shown). On the second pattern portion 23e of the circuit pattern layer 23, semiconductor chips 70 constituting the lower arm, in this example, four semiconductor chips 72, are mounted via bonding materials such as sintered material or solder (not shown). Semiconductor elements such as RC-IGBT (Reverse Conducting - Insulated Gate Bipolar Transistor) and MOSFET (Metal Oxide Semiconductor Field Effect Transistor) are used for semiconductor chips 71 and 72. MOSFETs have a body diode internally that is antiparallel to the switching region. When using RC-IGBTs, antiparallel-connected diodes are built into semiconductor chips 71 and 72.

[0030] Each of the semiconductor chips 71 and 72 has a first load electrode (e.g., a positive electrode) provided on one main surface (the bottom surface in this example), and a second load electrode (e.g., a negative electrode) and a control electrode (second) provided on the other main surface (the top surface in this example). load It has electrodes (including a sense electrode that is equipotential to the electrode). For example, the first load electrode on the bottom surface functions as the collector electrode or drain electrode, the second load electrode on the top surface functions as the emitter electrode or source electrode, and the control electrode on the top surface functions as the gate electrode. The second load electrode is connected to auxiliary source wiring (in the case of a MOSFET) or auxiliary emitter wiring (in the case of an RC-IGBT) for measuring a reference potential relative to the gate.

[0031] The semiconductor chip 71 on the upper arm has a first load electrode on its lower surface connected to a first pattern section 23d to which the P terminal 30 is connected via a bonding material, and a second load electrode on its upper surface connected to a second pattern section 23e to which the output terminal 50 is connected via a conductive member 81a such as a wire. The semiconductor chip 72 on the lower arm has a first load electrode on its lower surface connected to a second pattern section 23e to which the output terminal 50 is connected via a bonding material, and a second load electrode on its upper surface connected to a third pattern section 23f of the circuit pattern layer 23 to which the N terminal 40 is connected via a conductive member 82a such as a wire. The control electrode (including the sense electrode) on the upper surface of the semiconductor chip 71 on the upper arm is connected to a fourth pattern section 23h of the circuit pattern layer 23 via a conductive member 81b such as a wire, and the fourth pattern section 23h is connected to a part of the control terminal 60 (control terminal 61) via a conductive member 81c such as a wire. The control electrodes (including the sense electrodes) on the upper surface of the semiconductor chip 72 of the lower arm are connected to the fifth pattern portion 23i of the circuit pattern layer 23 via a conductive member 82b such as a wire, and the fifth pattern portion 23i is connected to a part of the control terminal 60 (control terminal 62) via a conductive member 82c such as a wire.

[0032] In semiconductor module 1, a semiconductor chip 71 connected to P terminal 30 and control terminal 61 and a semiconductor chip 72 connected to N terminal 40 and control terminal 62 are connected in series, and an output terminal 50 is connected to the connection node between semiconductor chip 71 and semiconductor chip 72. In semiconductor module 1, current entering from P terminal 30 flows through the first pattern section 23d, through the semiconductor chip 71 and conductive member 81a of the upper arm controlled by control terminal 61, through the second pattern section 23e, and flows to the output terminal 50. Current entering from output terminal 50 flows through the second pattern section 23e, through the semiconductor chip 72 and conductive member 82a of the lower arm controlled by control terminal 62, through the third pattern section 23f, and flows to the N terminal 40.

[0033] For example, three such semiconductor modules 1 are connected in parallel to each other. The connection nodes between the series-connected semiconductor chips 71 and 72, which are connected to the output terminals 50 of each of the parallel-connected semiconductor modules 1, are designated as U-phase, V-phase, and W-phase output nodes, respectively, and are connected to loads such as motors.

[0034] In this example, a semiconductor module 1 is provided, which includes four semiconductor chips 71 constituting the upper arm and four semiconductor chips 72 constituting the lower arm. However, the number of semiconductor chips 71 and 72 in the semiconductor module 1 is not limited to this. Circuit pattern layers 23 with pattern shapes corresponding to the number and layout of the mounted semiconductor chips 71 and 72 can be formed on the insulating circuit board 20.

[0035] As described above, the insulating circuit board 20 of the semiconductor module 1 shown in Figures 1 to 4 has a first through hole 21a with a diameter D1 in the conductor layer 21, a second through hole 22a with a diameter D2 which is larger than diameter D1 in the insulating plate 22, and an opening 23a with a diameter D3 which is larger than diameter D2 in the circuit pattern layer 23. The sealing resin 10 has a third through hole 10a with a diameter larger than the diameter D1 of the first through hole 21a, for example, a diameter larger than diameter D1 and smaller than diameter D2. The first through hole 21a, the second through hole 22a, the opening 23a, and the third through hole 10a are provided at locations opposite to each other.

[0036] When connecting the insulating circuit board 20 of the semiconductor module 1 to a cooling body such as a heat dissipation base, a heat transfer medium such as a compound or a thermal conductive sheet is interposed between the conductor layer 21 of the insulating circuit board 20 and the cooling body. Then, a screw member is inserted through the third through hole 10a of the sealing resin 10, and through the opening 23a, second through hole 22a, and first through hole 21a of the insulating circuit board 20, and the tip of the screw member is screwed into the cooling body. At this time, the insulating circuit board 20 is configured to press the area around the first through hole 21a of the conductor layer 21 in the second through hole 22a of the insulating plate 22 (terrace region 21c) towards the cooling body with the head of the screw member opposite to the tip that is screwed into the cooling body.

[0037] In semiconductor module 1, the insulating circuit board 20 can be connected to the cooling body using a heat transfer medium such as a compound or thermal conductive sheet and screw members, without using bonding materials such as sintered material or solder, thus eliminating the need for heating or pressurizing during connection. This makes it possible to suppress the remelting of bonding materials 140 such as sintered material or solder that connects the semiconductor chips 70 (semiconductor chips 71 and 72) to the circuit pattern layer 23 (first pattern portion 23d and second pattern portion 23e) of the insulating circuit board 20 due to heat, damage to the semiconductor chips 70 and the components connected to them due to pressure, and peeling (separation) of the sealing resin 10 from the insulating circuit board 20 on which the semiconductor chips 70 etc. are mounted due to heat and pressure. Furthermore, by enabling the screw member to press against the conductor layer 21 of the insulating circuit board 20 when making a connection using the screw member, it becomes possible to suppress damage to the circuit pattern layer 23 that may occur when pressing the circuit pattern layer 23, malfunctions due to electrical connection with the screw member, and damage to the insulating plate 22 that may occur when pressing the insulating plate 22. The insulating circuit board 20 enables the realization of a semiconductor module 1 that can effectively suppress quality degradation associated with connection to a cooling body via the conductive layer 21.

[0038] Below, examples of connecting the semiconductor module 1 having the above configuration to a cooling body will be described as the second, third, and fourth embodiments. [Second Embodiment] Figures 5 and 6 illustrate an example of a semiconductor device according to the second embodiment. Figure 5 schematically shows an exploded cross-sectional view of the main parts of an example of a semiconductor device. Figure 6 schematically shows a cross-sectional view of the main parts of an example of a semiconductor device.

[0039] In the assembly (manufacturing) of a semiconductor device equipped with a semiconductor module 1 as described in the first embodiment above, in addition to the semiconductor module 1, a cooling body 90, a heat transfer medium 100, a washer 110A, and a screw member 120A are prepared as shown in Figure 5.

[0040] Here, the cooling body 90 is a metal plate that functions as a heat dissipation base, heat sink, etc. The metal plate of the cooling body 90 is made of a metal material with good thermal conductivity, such as copper or aluminum. The metal plate of the cooling body 90 may be provided with plate-shaped or needle-shaped fins, and may also have a channel through which a liquid or gaseous coolant can flow. The cooling body 90 is positioned on the side of the semiconductor module 1 where the conductor layer 21 is exposed from the sealing resin 10, that is, on the side opposite to the insulating plate 22 of the conductor layer 21. The cooling body 90 has a screw mounting hole 91 opposite the first through hole 21a of the conductor layer 21 into which a screw member 120A inserted into the first through hole 21a is screwed.

[0041] The heat transfer medium 100 is placed between the semiconductor module 1 and the cooler 90. For example, a thermal interface material (TIM) such as a compound or a thermal conductive sheet can be used for the heat transfer medium 100. The heat transfer medium 100 may be pre-applied or attached to the side of the semiconductor module 1 where the conductive layer 21 is exposed from the sealing resin 10, or it may be pre-applied or attached to the side of the cooler 90 where the conductive layer 21 of the semiconductor module 1 is facing. When the heat transfer medium 100 is placed between the semiconductor module 1 and the cooler 90, it is positioned around the first through-hole 21a of the conductive layer 21 of the semiconductor module 1 and the screw mounting hole 91 of the cooler 90.

[0042] For example, the washer 110A and the screw member 120A may be made of metal. Alternatively, the washer 110A and the screw member 120A may be made of resin, provided that sufficient mechanical strength of the washer itself and sufficient connection strength are ensured when they are used to connect the semiconductor module 1 and the cooler 90.

[0043] The washer 110A is a flat washer that can be accommodated in the third through-hole 10a of the sealing resin 10 and has an outer diameter that can contact the periphery (terrace region 21c) of the first through-hole 21a of the conductor layer 21. The washer 110A has a hole 111A with an opening size that allows the threaded portion 121A of the screw member 120A, which is inserted through the first through-hole 21a of the conductor layer 21, to be inserted.

[0044] Screws, bolts, or fasteners are used for the screw member 120A. The screw member 120A has a threaded portion 121A and a head 122A. The threaded portion 121A has a diameter that allows it to pass through the hole 111A of the washer 110A and the first through hole 21a of the conductor layer 21, and its tip is screwed into the screw mounting hole 91 of the cooling body 90. The head 122A is provided on the opposite side of the tip of the threaded portion 121A. The head 122A has a diameter that is larger than the hole 111A of the washer 110A and smaller than the third through hole 10a of the sealing resin 10. That is, the screw member 120A has a head 122A that is sized to fit into the third through hole 10a of the sealing resin 10 together with the washer 110A.

[0045] Furthermore, if the third through-hole 10a of the sealing resin 10 is set to have a larger opening size than the second through-hole 22a of the insulating plate 22, a washer 110A having an outer diameter smaller than the second through-hole 22a of the insulating plate 22, and a screw member 120A having a head 122A with a diameter smaller than the second through-hole 22a are used.

[0046] The washer 110A is used with an outer diameter such that it contacts the area around the first through-hole 21a of the conductor layer 21 (terrace region 21c) within the second through-hole 22a of the insulating plate 22, while it is inside the third through-hole 10a of the sealing resin 10. The screw member 120A is used which has a head 122A that can press such a washer 110A toward the cooling body 90.

[0047] For assembly, for example, a semiconductor module 1, a cooler 90, a heat transfer medium 100, a washer 110A, and a screw member 120A are prepared as shown in Figure 5. The semiconductor module 1 and the cooler 90 are arranged so that their first through holes 21a and screw mounting holes 91 face each other, and the heat transfer medium 100 is placed between the semiconductor module 1 and the cooler 90 arranged in this manner. The screw member 120A is inserted through the hole 111A of the washer 110A, and its screw portion 121A is inserted through the third through hole 10a of the sealing resin 10, the opening 23a of the circuit pattern layer 23, the second through hole 22a of the insulating plate 22, and the first through hole 21a of the conductor layer 21. The tip of the inserted screw portion 121A is screwed into the screw mounting hole 91 of the cooler 90. This results in a semiconductor device 2A as shown in Figure 6, in which a screw member 120A and a washer 110A are used, and the semiconductor module 1 and the cooler 90 are connected via a heat transfer medium 100.

[0048] In the semiconductor device 2A shown in Figure 6, the tip of the threaded portion 121A of the screw member 120A, which is inserted through the third through-hole 10a of the sealing resin 10, the opening 23a of the circuit pattern layer 23, the second through-hole 22a of the insulating plate 22, and the first through-hole 21a of the conductor layer 21, is screwed into the screw mounting hole 91 of the cooling body 90. The semiconductor module 1 is connected to the cooling body 90 via the heat transfer medium 100, with the conductor layer 21 being pressed towards the cooling body 90 by the head 122A of the screw member 120A via the washer 110A.

[0049] At this time, the washer 110A is in contact with the area around the first through-hole 21a of the conductor layer 21 (terrace region 21c) within the second through-hole 22a of the insulating plate 22, inside the third through-hole 10a of the sealing resin 10. The washer 110A, which is in contact with the area around the first through-hole 21a of the conductor layer 21, is pressed towards the cooler 90 by the head 122A of the screw member 120A, which is screwed into the screw mounting hole 91 of the cooler 90. As a result, the semiconductor module 1 is pressed towards the cooler 90 by the screw member 120A and the washer 110A, and connected to the cooler 90 via the heat transfer medium 100. If the thickness of the conductor layer 21 pressed towards the cooler 90 by the screw member 120A and the washer 110A is made relatively thick, the rigidity is increased, and the connection strength between the semiconductor module 1 and the cooler 90 via the conductor layer 21 is increased.

[0050] In semiconductor device 2A, the semiconductor module 1 and the cooling body 90 are connected using a heat transfer medium 100 such as TIM, as well as screw members 120A and washers 110A, without using bonding materials such as sintered material or solder, thus eliminating the need for heating or pressurizing during connection. This suppresses the remelting of bonding materials 140 such as sintered material or solder that connects the semiconductor chip 70 to the circuit pattern layer 23 due to heat, damage to the semiconductor chip 70 and the components connected to it due to pressure, and peeling of the sealing resin 10 from the insulating circuit board 20 on which the semiconductor chip 70 is mounted due to heat and pressure.

[0051] Furthermore, in the semiconductor device 2A, the head 122A of the screw member 120A presses the area around the first through-hole 21a of the conductor layer 21 toward the cooling body 90 via the washer 110A. This suppresses damage to the circuit pattern layer 23 that may occur when the circuit pattern layer 23 is pressed, malfunctions due to electrical connection with the metal screw member 120A and washer 110A, and damage to the insulating plate 22 that may occur when the insulating plate 22 is pressed. A semiconductor device 2A is realized that can effectively suppress the quality degradation associated with the connection of the semiconductor module 1 to the cooler 90 via the conductive layer 21.

[0052] Furthermore, in semiconductor device 2A, if metal screw members 120A and washers 110A are used, the conductive layer 21 and the cooler 90 are thermally connected via the washers 110A and screw members 120A. Heat generated in semiconductor module 1 is transferred to the cooler 90 via the heat transfer medium 100, as well as via the washers 110A and screw members 120A. This improves heat dissipation from semiconductor module 1, suppressing damage and performance degradation of semiconductor module 1 due to overheating.

[0053] In semiconductor device 2A, if metal screw members 120A and washers 110A are used, the conductor layer 21 and the cooling body 90 are electrically connected via the washers 110A and screw members 120A. On the other hand, in semiconductor device 2A, the head 122A of the screw member 120A is housed together with the washer 110A in the third through-hole 10a of the sealing resin 10. Therefore, a sufficient creepage distance (insulation distance) is ensured between the screw member 120A and washer 110A and the P terminal 30, N terminal 40, output terminal 50 and control terminal 60 that extend from the sealing resin 10 to the outside. This suppresses electrical malfunctions such as noise and performance degradation of the semiconductor module 1 caused by using metal screw members 120A and washers 110A.

[0054] Furthermore, if the screw member 120A and washer 110A have sufficient mechanical strength and connection strength between the semiconductor module 1 and the cooler 90, and if thermal and electrical connection between the screw member 120A and washer 110A and the cooler 90 is not required, then resin ones can also be used.

[0055] In semiconductor device 2A, the connection between the semiconductor module 1 and the cooler 90 is made by tightening a screw member 120A via a heat transfer medium 100 such as TIM. This eliminates the need for special equipment, such as when using bonding materials like sintered material or solder, and makes it possible to connect the semiconductor module 1 to coolers 90 of various types and sizes.

[0056] [Third Embodiment] Figures 7 and 8 illustrate an example of a semiconductor device according to the third embodiment. Figure 7 schematically shows an exploded cross-sectional view of the main parts of an example of a semiconductor device. Figure 8 schematically shows a cross-sectional view of the main parts of an example of a semiconductor device.

[0057] In the assembly (manufacturing) of a semiconductor device equipped with a semiconductor module 1 as described in the first embodiment above, in addition to the semiconductor module 1, a cooling body 90, a heat transfer medium 100, a spacer 130B, a washer 110B, and a screw member 120B are prepared as shown in Figure 7.

[0058] Here, the cooling body 90 used is the cooling body 90 described in the second embodiment above, that is, a cooling body 90 having a screw mounting hole 91 in a location opposite to the first through hole 21a of the conductor layer 21 into which a screw member 120B inserted through the first through hole 21a is screwed.

[0059] The heat transfer medium 100 is the heat transfer medium 100 described in the second embodiment above, that is, TIM which is placed between the semiconductor module 1 and the cooler 90 and around the first through-hole 21a of the conductor layer 21 and the screw mounting hole 91 of the cooler 90.

[0060] For example, a metal spacer 130B may be used. Alternatively, a resin spacer 130B may be used, provided that it has sufficient mechanical strength and sufficient connection strength when used to connect the semiconductor module 1 and the cooler 90. The spacer 130B is a cylindrical spacer having an outer diameter and height that can be accommodated in the third through-hole 10a of the sealing resin 10 of the semiconductor module 1. The spacer 130B has a hole 131B with an opening size that allows the threaded portion 121B of the screw member 120B, which is inserted through the first through-hole 21a of the conductor layer 21, to be inserted. The spacer 130B is such that one end can abut against the area (terrace region 21c) of the first through-hole 21a of the conductor layer 21, within the second through-hole 22a of the insulating plate 22, within the third through-hole 10a of the sealing resin 10.

[0061] Furthermore, if the third through-hole 10a of the sealing resin 10 is set to have a larger opening size than the second through-hole 22a of the insulating plate 22, a spacer 130B with an outer diameter smaller than the second through-hole 22a of the insulating plate 22 is used.

[0062] For example, the washer 110B and screw member 120B are made of metal. Alternatively, the washer 110B and screw member 120B may be made of resin, provided that sufficient mechanical strength is ensured for the washer itself and for sufficient connection strength when they are used to connect the semiconductor module 1 and the cooler 90.

[0063] The washer 110B is a flat washer having an outer diameter larger than the third through-hole 10a of the sealing resin 10. The washer 110B has a hole 111B with an opening size that allows the threaded portion 121B of the screw member 120B, which is inserted through the first through-hole 21a of the conductor layer 21, to pass through. The washer 110B is one that can contact the other end of the spacer 130B, one end of which contacts the periphery of the first through-hole 21a of the conductor layer 21.

[0064] Screws, bolts, or fasteners are used for the screw member 120B. The screw member 120B has a threaded portion 121B and a head 122B. The threaded portion 121B has a diameter that allows it to pass through the hole 111B of the washer 110B, the hole 131B of the spacer 130B, and the first through hole 21a of the conductor layer 21, and its tip is screwed into the screw mounting hole 91 of the cooling body 90. The head 122B is provided on the opposite side of the tip of the threaded portion 121B. The head 122B has a larger diameter than the hole 111B of the washer 110B.

[0065] For assembly, for example, a semiconductor module 1, a cooler 90, a heat transfer medium 100, a spacer 130B, a washer 110B, and a screw member 120B are prepared as shown in Figure 7. The semiconductor module 1 and the cooler 90 are arranged so that their first through holes 21a and screw mounting holes 91 face each other, and the heat transfer medium 100 is placed between the semiconductor module 1 and the cooler 90 arranged in this manner. The screw member 120B is inserted through the hole 111B of the washer 110B and the hole 131B of the spacer 130B, and its threaded portion 121B is inserted through the third through hole 10a of the sealing resin 10, the opening 23a of the circuit pattern layer 23, the second through hole 22a of the insulating plate 22, and the first through hole 21a of the conductor layer 21. The tip of the inserted threaded portion 121B is screwed into the screw mounting hole 91 of the cooler 90. This results in a semiconductor device 2B as shown in Figure 8, in which a screw member 120B, a washer 110B, and a spacer 130B are used, and the semiconductor module 1 and the cooler 90 are connected via a heat transfer medium 100.

[0066] In the semiconductor device 2B shown in Figure 8, the tip of the threaded portion 121B of the screw member 120B, which is inserted through the third through-hole 10a of the sealing resin 10, the opening 23a of the circuit pattern layer 23, the second through-hole 22a of the insulating plate 22, and the first through-hole 21a of the conductor layer 21, is screwed into the screw mounting hole 91 of the cooling body 90. The semiconductor module 1 is pressed towards the cooling body 90 by the head 122B of the screw member 120B via the spacer 130B and washer 110B, and is connected to the cooling body 90 via the heat transfer medium 100.

[0067] At this time, one end of the spacer 130B abuts against the periphery (terrace region 21c) of the first through-hole 21a of the conductor layer 21, within the second through-hole 22a of the insulating plate 22, inside the third through-hole 10a of the sealing resin 10. The other end of the spacer 130B, which abuts against the periphery of the first through-hole 21a of the conductor layer 21, is pressed toward the cooler 90 by the head 122B of the screw member 120B, which is screwed into the screw mounting hole 91 of the cooler 90 via a washer 110B located outside the third through-hole 10a of the sealing resin 10. The head 122B of the screw member 120B is located outside the third through-hole 10a of the sealing resin 10, similar to the washer 110B. As a result, the semiconductor module 1 is connected to the cooler 90 via the heat transfer medium 100, with the conductor layer 21 being pressed towards the cooler 90 by the screw member 120B, washer 110B, and spacer 130B. If the thickness of the conductor layer 21 pressed towards the cooler 90 by the screw member 120B, washer 110B, and spacer 130B is made relatively thick, the rigidity is increased, and the strength of the connection between the semiconductor module 1 and the cooler 90 via the conductor layer 21 is enhanced.

[0068] In semiconductor device 2B, the semiconductor module 1 and the cooling body 90 are connected using a heat transfer medium 100 such as TIM, as well as screw members 120B, washers 110B and spacers 130B, without using bonding materials such as sintered material or solder, thus eliminating the need for heating or pressurizing during connection. This suppresses the remelting of bonding materials 140 such as sintered material or solder that connects the semiconductor chip 70 to the circuit pattern layer 23 due to heat, damage to the semiconductor chip 70 and the components connected to it due to pressure, and peeling of the sealing resin 10 from the insulating circuit board 20 on which the semiconductor chip 70 is mounted due to heat and pressure.

[0069] Furthermore, in the semiconductor device 2B, the head 122B of the screw member 120B presses the area around the first through-hole 21a of the conductor layer 21 toward the cooling body 90 via the washer 110B and spacer 130B. This suppresses damage to the circuit pattern layer 23 that may occur when the circuit pattern layer 23 is pressed, malfunctions due to electrical connection with the metal screw member 120B, washer 110B and spacer 130B, and damage to the insulating plate 22 that may occur when the insulating plate 22 is pressed. A semiconductor device 2B is realized that can effectively suppress the quality degradation associated with the connection of the semiconductor module 1 to the cooler 90 via the conductive layer 21.

[0070] Furthermore, in semiconductor device 2B, if metal is used for the screw member 120B, washer 110B, and spacer 130B, the conductor layer 21 and the cooler 90 are thermally and electrically connected via the spacer 130B, washer 110B, and screw member 120B. Heat generated in semiconductor module 1 is transferred to the cooler 90 via the heat transfer medium 100, as well as via the spacer 130B, washer 110B, and screw member 120B. This improves heat dissipation from semiconductor module 1, suppressing damage and performance degradation of semiconductor module 1 due to overheating.

[0071] In the semiconductor device 2B, the head 122B of the screw member 120B is positioned outside the third through hole 10a of the sealing resin 10. Therefore, it becomes possible to use a screw member 120B with a relatively large head 122B.

[0072] In the semiconductor device 2B, the connection between the semiconductor module 1 and the cooler 90 is made by tightening a screw member 120B via a heat transfer medium 100. This eliminates the need for special equipment, such as when using bonding materials like sintered material or solder, and allows the connection of the semiconductor module 1 to coolers 90 of various types and sizes.

[0073] [Fourth Embodiment] Figures 9 and 10 illustrate an example of a semiconductor device according to the fourth embodiment. Figure 9 schematically shows an exploded cross-sectional view of the main parts of an example of a semiconductor device. Figure 10 schematically shows a cross-sectional view of the main parts of an example of a semiconductor device.

[0074] In the assembly (manufacturing) of a semiconductor device comprising the semiconductor module 1 as described in the first embodiment above, in addition to the semiconductor module 1, a cooling body 90, a heat transfer medium 100, a washer 110C, and a screw member 120C are prepared as shown in Figure 9.

[0075] Here, the cooling body 90 used is the cooling body 90 described in the second embodiment above, that is, a cooling body 90 having a screw mounting hole 91 in a location opposite to the first through hole 21a of the conductor layer 21 into which a screw member 120C inserted through the first through hole 21a is screwed.

[0076] The heat transfer medium 100 is the heat transfer medium 100 described in the second embodiment above, that is, a TIM placed between the semiconductor module 1 and the cooler 90, and positioned around the first through-hole 21a of the conductor layer 21 and the screw mounting hole 91 of the cooler 90.

[0077] For example, the washer 110C and screw member 120C may be made of metal. Alternatively, the washer 110C and screw member 120C may be made of resin, provided that sufficient mechanical strength of the washer itself and sufficient connection strength are ensured when they are used to connect the semiconductor module 1 and the cooler 90.

[0078] The washer 110C is a flat washer having an outer diameter larger than the third through hole 10a of the sealing resin 10. The washer 110C has a hole 111C with an opening size through which the threaded portion 121C of the screw member 120C can be inserted.

[0079] Screws, bolts, or fasteners are used for the screw member 120C. The screw member 120C has a threaded portion 121C whose tip is screwed into the screw mounting hole 91 of the cooling body 90, and a head 122C provided on the opposite side of the threaded portion 121C from the tip. The threaded portion 121C has a first portion 121Ca with a diameter that is inserted through the hole 111C of the washer 110C and the third through hole 10a of the sealing resin 10, but not through the first through hole 21a of the conductor layer 21, and a second portion 121Cb with a smaller diameter that is inserted through the first through hole 21a. The head 122C has a larger diameter than the hole 111C of the washer 110C.

[0080] For assembly, for example, a semiconductor module 1, a cooler 90, a heat transfer medium 100, a washer 110C, and a screw member 120C are prepared as shown in Figure 9. The semiconductor module 1 and the cooler 90 are arranged so that their first through holes 21a and screw mounting holes 91 face each other, and the heat transfer medium 100 is placed between the semiconductor module 1 and the cooler 90 arranged in this manner. The screw member 120C is inserted through the hole 111C of the washer 110C, and the larger diameter first portion 121Ca of the screw portion 121C is inserted through the third through hole 10a of the sealing resin 10, the opening 23a of the circuit pattern layer 23, and the second through hole 22a of the insulating plate 22, while the smaller diameter second portion 121Cb of the screw portion 121C is inserted through the first through hole 21a of the conductor layer 21. The tip of the inserted threaded portion 121C is screwed into the threaded mounting hole 91 of the cooling body 90. This results in a semiconductor device 2C as shown in Figure 10, in which the threaded member 120C and washer 110C are used, and the semiconductor module 1 and the cooling body 90 are connected via the heat transfer medium 100.

[0081] In the semiconductor device 2C shown in Figure 10, the tip of the threaded portion 121C of the screw member 120C, which is inserted through the third through-hole 10a of the sealing resin 10, the opening 23a of the circuit pattern layer 23, the second through-hole 22a of the insulating plate 22, and the first through-hole 21a of the conductor layer 21, is screwed into the screw mounting hole 91 of the cooling body 90. The semiconductor module 1 is pressed towards the cooling body 90 by the screw member 120C and connected to the cooling body 90 via the heat transfer medium 100.

[0082] At this time, the first, larger diameter portion 121Ca of the threaded portion 121C of the screw member 120C abuts against the periphery of the first through-hole 21a of the conductor layer 21 (the terrace region 21c of the conductor layer 21) within the second through-hole 22a of the insulating plate 22, inside the third through-hole 10a of the sealing resin 10. This first, larger diameter portion 121Ca abutting against the periphery of the first through-hole 21a of the conductor layer 21 presses the conductor layer 21 toward the cooler 90 by screwing the second, smaller diameter portion 121Cb of the screw member 120C into the screw mounting hole 91. In this way, the conductor layer 21 is pressed toward the cooler 90 by the first, larger diameter portion 121Ca of the threaded portion 121C, and the semiconductor module 1 is connected to the cooler 90 via the heat transfer medium 100. By making the thickness of the conductive layer 21 that is pressed against the cooler 90 side by the first, larger diameter portion 121Ca of the screw portion 121C relatively thick, the rigidity is increased, and the connection strength between the semiconductor module 1 and the cooler 90 via the conductive layer 21 is enhanced.

[0083] In semiconductor device 2C, the semiconductor module 1 and the cooling body 90 are connected using a heat transfer medium 100 such as TIM, as well as screw members 120C and washers 110C, without using bonding materials such as sintered material or solder, thus eliminating the need for heating or pressurizing during connection. This suppresses the remelting of bonding materials 140 such as sintered material or solder that connects the semiconductor chip 70 to the circuit pattern layer 23 due to heat, damage to the semiconductor chip 70 and the components connected to it due to pressure, and peeling of the sealing resin 10 from the insulating circuit board 20 on which the semiconductor chip 70 is mounted due to heat and pressure.

[0084] Furthermore, in the semiconductor device 2C, the large-diameter first portion 121Ca of the threaded portion 121C of the screw member 120C presses the area around the first through-hole 21a of the conductor layer 21 toward the cooling body 90. This suppresses damage to the circuit pattern layer 23 that may occur when the circuit pattern layer 23 is pressed, malfunctions due to electrical connection with the metal screw member 120C and washer 110C, and damage to the insulating plate 22 that may occur when the insulating plate 22 is pressed. A semiconductor device 2C is realized that can effectively suppress the quality degradation associated with the connection of the semiconductor module 1 to the cooler 90 via the conductive layer 21.

[0085] Furthermore, in the semiconductor device 2C, if a metal screw member 120C is used, the conductive layer 21 and the cooler 90 are thermally and electrically connected via the screw member 120C. Heat generated in the semiconductor module 1 is transferred to the cooler 90 via the heat transfer medium 100, as well as via the screw member 120C. This improves the heat dissipation from the semiconductor module 1, suppressing damage and performance degradation of the semiconductor module 1 due to overheating.

[0086] In the semiconductor device 2C, the head 122C of the screw member 120C is positioned outside the third through hole 10a of the sealing resin 10. Therefore, it becomes possible to use a screw member 120C with a relatively large head 122C.

[0087] In the semiconductor device 2C, the connection between the semiconductor module 1 and the cooler 90 is made by tightening a screw member 120C via a heat transfer medium 100. This eliminates the need for special equipment, such as when using bonding materials like sintered material or solder, and makes it possible to connect the semiconductor module 1 to coolers 90 of various types and sizes.

[0088] Next, a modified example will be described as the fifth embodiment. [Fifth Embodiment] Figure 11 illustrates an example of a semiconductor module according to the fifth embodiment. Figure 11(A) schematically shows a plan view of the main parts of an example semiconductor device. Figure 11(B) schematically shows a cross-sectional view of the main parts of an example semiconductor device. Figure 11(B) is a schematic cross-sectional view of the XI-XI section of Figure 11(A).

[0089] The semiconductor module (also called a "semiconductor device") 1a shown in Figures 11(A) and 11(B) differs from the semiconductor module 1 described in the first embodiment above in that it has two sets of first through-holes 21a in the conductor layer 21, second through-holes 22a in the insulating plate 22, openings 23a in the circuit pattern layer 23, and third through-holes 10a in the sealing resin 10, all located in different places. A semiconductor chip 70 is connected to the circuit pattern layer 23 of the semiconductor module 1a using bonding material 140 and conductive member 80. Further connections to the circuit pattern layer 23 include P terminals 30, N terminals 40, output terminals 50, and control terminals 60.

[0090] In the semiconductor module 1a, predetermined screw members can be inserted through the third through-hole 10a, opening 23a, second through-hole 22a, and first through-hole 21a of each set. The semiconductor module 1a is connected to a cooler via a heat transfer medium. An example of a semiconductor device in which the semiconductor module 1a and the cooler are connected is shown in Figure 12. Figure 12 illustrates an example of a semiconductor device according to the fifth embodiment. Figure 12 schematically shows a cross-sectional view of the main part of an example of a semiconductor device.

[0091] The cooling body 90a connected to the semiconductor module 1a is provided with screw mounting holes 91a at locations opposite to the first through holes 21a of each set of conductor layers 21. The semiconductor module 1a and the cooling body 90a are arranged so that their corresponding first through holes 21a and screw mounting holes 91a face each other, and a heat transfer medium 100 such as TIM is placed between them. Then, for example, a screw member 120A as described in the second embodiment above is inserted through a washer 110A and inserted through the third through hole 10a, opening 23a, second through hole 22a and first through hole 21a of each set, respectively. The tip of the threaded portion 121A of each inserted screw member 120A is screwed into the screw mounting hole 91a of the cooling body 90a. This results in a semiconductor device 2D as shown in Figure 12, in which two sets of screw members 120A and washers 110A are used, and the semiconductor module 1a and the cooler 90a are connected via a heat transfer medium 100.

[0092] In semiconductor device 2D, the same effects as those described for semiconductor device 2A in the second embodiment above can be obtained. Furthermore, in semiconductor device 2D, the semiconductor module 1a and the cooler 90a are connected at two different locations using screw members 120A and washers 110A, so that the semiconductor module 1a does not rotate and shift in the planar direction of the cooler 90a.

[0093] In this example, the semiconductor module 1a is connected to the cooler 90a using the screw member 120A and washer 110A as described in the second embodiment. In addition, the semiconductor module 1a can also be connected to the cooler 90a using the screw member 120B, washer 110B and spacer 130B as described in the third embodiment, or using the screw member 120C and washer 110C as described in the fourth embodiment.

[0094] Furthermore, the arrangement and number of sets of the first through-hole 21a, second through-hole 22a, opening 23a, third through-hole 10a, and screw mounting hole 91a, which are positioned opposite each other, are not limited to those shown in Figures 11(A), 11(B), and 12. For example, three or more sets can be provided on a straight line parallel to the side of the semiconductor module 1a (the outer edge of the sealing resin 10) in a plan view (for example, on a straight line passing through the center of the semiconductor module 1a), or two or three or more sets can be provided at different locations on diagonals passing through the center of the semiconductor module 1a in a plan view, or four sets can be provided at the four corners of the semiconductor module 1a in a plan view.

[0095] Next, an example of a semiconductor module and a method for manufacturing a semiconductor device equipped therewith will be described as a sixth embodiment. [Sixth Embodiment] Figure 13 illustrates an example of a method for manufacturing a semiconductor device according to the sixth embodiment.

[0096] For example, an insulating circuit board 20 as described in the first embodiment above is prepared (step S1). That is, an insulating circuit board 20 is prepared which includes a conductor layer 21, an insulating plate 22 on the conductor layer 21, and a circuit pattern layer 23 on the insulating plate 22, wherein a first through hole 21a is provided in the conductor layer 21, a second through hole 22a with an opening size larger than the first through hole 21a is provided in the insulating plate 22, and an opening 23a with an opening size larger than the second through hole 22a is provided in the circuit pattern layer 23. Here, the second through hole 22a is provided at a location opposite to the first through hole 21a, the opening 23a is provided at a location opposite to the second through hole 22a, and the first through hole 21a, the second through hole 22a, and the opening 23a are provided at locations opposite to each other. The first through-hole 21a, the second through-hole 22a, and the opening 23a are provided in one or more sets at predetermined locations on the insulating circuit board 20.

[0097] The semiconductor chip 70, P terminal 30, N terminal 40, output terminal 50, and control terminal 60 are mounted on the prepared insulated circuit board 20 (step S2). The P terminal 30, N terminal 40, output terminal 50, and control terminal 60 are connected to predetermined locations on the circuit pattern layer 23 of the insulated circuit board 20. The semiconductor chip 70 is mounted on predetermined locations on the circuit pattern layer 23 using a bonding material 140 such as sintered material or solder, and connected using conductive members 80 such as wires.

[0098] After mounting the semiconductor chip 70 and the like onto the insulating circuit board 20, a sealing resin 10 is formed (step S3). The sealing resin 10 seals a portion of each of the P terminal 30, N terminal 40, output terminal 50 and control terminal 60, the semiconductor chip 70 and the circuit pattern layer 23 on which it is mounted, and the conductive member 80 connected to the semiconductor chip 70. The sealing resin 10 is formed such that it has a third through-hole 10a with a larger opening size than the first through-hole 21a at a location opposite to the first through-hole 21a of the conductor layer 21. If there are multiple first through-holes 21a (and the second through-holes 22a and openings 23a opposite to it), the third through-hole 10a is formed at a location opposite to each of them.

[0099] Steps S1, S2, and S3 form semiconductor modules 1 and 1a comprising an insulating circuit board 20 and a sealing resin 10. The formed semiconductor module 1, etc., is placed on the cooler 90 or cooler 90a described above via a heat transfer medium 100 such as TIM (step S4). The semiconductor module 1, etc., is positioned so that the first through-hole 21a of its conductor layer 21 and the screw mounting holes 91 of the cooler 90, etc., face each other. The heat transfer medium 100 is placed around the first through-hole 21a and the screw mounting holes 91, etc., between the semiconductor module 1, etc. and the cooler 90, etc.

[0100] The semiconductor module 1, etc., which is placed on the cooling body 90, etc. via the heat transfer medium 100, is connected to the cooling body 90, etc. using a predetermined screw member, etc. (step S5) and fixed in place. For example, the semiconductor module 1, etc., is connected to the cooling body 90, etc., using a screw member 120A and a washer 110A as described in the second embodiment above. In addition, the semiconductor module 1, etc., may be connected to the cooling body 90, etc., using a screw member 120B, a washer 110B and a spacer 130B as described in the third embodiment above, or using a screw member 120C and a washer 110C as described in the fourth embodiment above.

[0101] In step S5, the semiconductor module 1, etc., is pressed by a predetermined screw member or the like, so that the area around the first through-hole 21a of the conductor layer 21 within the second through-hole 22a of the insulating plate 22 (terrace region 21c) is pressed towards the cooler 90, etc., and connected to the cooler 90, etc. via the heat transfer medium 100.

[0102] By the method described above, a semiconductor device comprising a semiconductor module 1 and a cooler 90 is manufactured. This method enables connection between the semiconductor module 1 and the cooler 90 without the need for heating and pressurization. This suppresses the remelting of the bonding material 140 and the peeling of the sealing resin 10. Furthermore, the semiconductor module 1 and the cooler 90 are connected by pressing the conductor layer 21 with a predetermined screw member or the like. This suppresses damage to the circuit pattern layer 23 and the insulating plate 22, as well as the occurrence of electrical malfunctions, which can occur when connecting by pressing these components. This method realizes a semiconductor device that can effectively suppress the deterioration of quality associated with the connection of the semiconductor module 1 to the cooler 90 via the conductor layer 21. [Explanation of Symbols]

[0103] 1,1a Semiconductor module (semiconductor device) 2A,2B,2C,2D semiconductor device 10 Sealing resin 10a 3rd through hole 20 Insulated circuit board 21 Conductor layer 21a 1st through hole 21b, 22b, 23b Inner border 21c, 22c Terrace area 22 Insulating board 22a 2nd through hole 23 Circuit Pattern Layers 23a opening 23d First pattern section 23e Second pattern section 23f Third Pattern Section 23h 4th Pattern Section 23i Fifth pattern section 30P terminal 40N terminal 50 output terminals 60, 61, 62 Control terminals 70, 71, 72 Semiconductor chips 80, 81a, 81b, 81c, 82a, 82b, 82c Conductive material 90,90a Cooling 91,91a Screw mounting holes 100 Heat transfer medium 110A, 110B, 110C washers 111A, 111B, 111C, 131B hole 120A, 120B, 120C Screw components 121A, 121B, 121C Screw part 121Ca 1st part 121Cb 2nd part 122A,122B,122C Head 130B Spacer 140 Bonding materials D1,D2,D3 diameter

Claims

1. A conductor layer having a first through hole, An insulating plate is disposed on the conductor layer and has a second through-hole with a larger opening size than the first through-hole at a location opposite to the first through-hole, A circuit pattern layer is disposed on the insulating plate and has an opening with a larger opening size than the second through-hole at a location facing the second through-hole, A semiconductor chip mounted on the circuit pattern layer, A sealing resin that seals the circuit pattern layer and the semiconductor chip, and has a third through-hole with an opening size larger than the first through-hole and smaller than the second through-hole at a location opposite to the first through-hole, A semiconductor device equipped with a semiconductor device.

2. A cooling body is provided, which is positioned on the opposite side of the conductor layer from the insulating plate side and has a screw mounting hole in a location facing the first through hole, A heat transfer medium is disposed between the conductor layer and the cooling body, and around the first through hole and the screw mounting hole, A semiconductor device according to claim 1, comprising:

3. A threaded portion is inserted through the third through hole, the opening, the second through hole, and the first through hole, and its tip is screwed into the screw mounting hole, A head is provided on the side opposite to the tip of the screw portion, and presses the area around the first through hole in the second through hole toward the cooling body, A semiconductor device according to claim 2, comprising a screw member having

4. The semiconductor device according to claim 3, wherein the conductive layer is thermally and electrically connected to the cooling body through the screw member.

5. The semiconductor device according to claim 3 or 4, wherein the head is positioned inside the third through-hole and presses the area around the first through-hole inside the second through-hole toward the cooling body.

6. A washer is disposed inside the third through hole and through which the threaded portion is inserted, The semiconductor device according to claim 5, wherein the head presses the area around the first through-hole in the second through-hole toward the cooling body via the washer.

7. The third through-hole is disposed inside the third through-hole, and one end of the cylindrical spacer is in contact with the periphery of the first through-hole inside the second through-hole, The semiconductor device according to claim 3 or 4, wherein the head is positioned outside the third through-hole, presses the other end of the spacer, and presses the area around the first through-hole in the second through-hole toward the cooling body via the spacer.

8. A washer is provided on the upper surface of the sealing resin through which the screw portion is inserted, The other end of the spacer is located at the position of the upper surface of the sealing resin. The head presses against the washer, The semiconductor device according to claim 7, wherein the washer presses against the other end of the spacer and the upper surface of the sealing resin.

9. The screw portion has a first portion that is inserted through the third through hole but not through the first through hole, and a second portion that is inserted through the first through hole and has a smaller diameter than the first portion. The semiconductor device according to claim 3 or 4, wherein the head is positioned outside the third through-hole and presses the area around the first through-hole within the second through-hole toward the cooling body via the first portion.

10. A washer is provided on the upper surface of the sealing resin through which the screw portion is inserted, The head presses against the washer, The semiconductor device according to claim 9, wherein the washer presses against the upper surface of the sealing resin.

11. It has multiple sets of the first through hole, the second through hole, the opening, the third through hole, and the screw mounting hole, A semiconductor device according to any one of claims 3 to 10, wherein each of the plurality of sets is arranged such that the threaded portion of each screw member is inserted through the third through hole, the opening, the second through hole, and the first through hole, the tip is screwed into the screw mounting hole, and the head is pressed against the cooling body side around the first through hole in the second through hole.

12. The semiconductor device according to any one of claims 1 to 11, wherein the thickness of the conductor layer is greater than the thickness of the circuit pattern layer.

13. A conductor layer having a first through hole, An insulating plate is disposed on the conductor layer and has a second through-hole with a larger opening size than the first through-hole at a location opposite to the first through-hole, A circuit pattern layer is disposed on the insulating plate and has an opening with a larger opening size than the second through-hole at a location facing the second through-hole, A step of preparing an insulating circuit board including, A step of mounting a semiconductor chip on the circuit pattern layer, A step of sealing the circuit pattern layer and the semiconductor chip, and forming a sealing resin having a third through-hole with an opening size larger than the first through-hole and smaller than the second through-hole at a location opposite the first through-hole, A method for manufacturing a semiconductor device comprising the same equipment.

14. A step of arranging a cooling body having a screw mounting hole in a location opposite to the first through hole on the side of the conductor layer opposite to the insulating plate side, A step of arranging a heat transfer medium between the conductor layer and the cooling body, around the first through hole and the screw mounting hole, A method for manufacturing a semiconductor device according to claim 13, comprising:

15. A method for manufacturing a semiconductor device according to claim 14, comprising the steps of inserting the threaded portion of a screw member into the third through hole, the opening, the second through hole, and the first through hole, screwing the tip of the threaded portion into the screw mounting hole, and pressing the area around the first through hole in the second through hole toward the cooling body with the head of the screw member provided on the side opposite to the tip of the threaded portion.

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