Semiconductor substrate heating apparatus, semiconductor device, and temperature control method

Abstract

The present invention provides a semiconductor substrate heating device including a heating cavity, a main heating unit, a compensation control unit, and at least one temperature compensation unit. A compensation control unit and several temperature compensation units are provided inside the heating cavity of the semiconductor substrate heating device. The upper surface of the compensation control unit is arranged corresponding to the bottom surface of the heating plate. Several temperature compensation units provided between the heating plate and the compensation control unit and communicatively connected to the compensation control unit are respectively arranged corresponding to several temperature control compensation regions on the bottom surface of the heating plate, avoiding complex wire design. Under the control of the compensation control unit, temperature compensation adjustment can be performed on the temperature compensation regions, effectively controlling the temperature uniformity of the semiconductor substrate while minimizing the manufacturing and maintenance costs.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor manufacturing, and particularly relates to a semiconductor substrate heating device, a semiconductor device, and a temperature control method.

Background Art

[0002] Currently, during the processing of semiconductor substrates, it is necessary to frequently use substrate baking devices. In the heating baking process, the temperature uniformity of the substrate is very important for whether the process capability index can be achieved. In the current prior art, for example, the Chinese patent application with the publication number CN103792974A adopts technical solutions to optimize the heating circuit of the heater and appropriately increase the number of heater zones to improve the temperature uniformity of the heating plate.

[0003] However, increasing the number of heater zones will significantly increase the development cycle and research and development costs of the heater, significantly increase the cost of the temperature control part, and at the same time increase the space for installing hardware, and more stringent management and control requirements are needed during the manufacture of the heater, which makes the yield of the heater likely to decrease, leading to an increase in the cost of the heater.

[0004] By adding zones to optimize the heating circuit, more conductor designs are required, the wiring becomes more complex, and it becomes difficult to design the peripheral structure of the heater.

[0005] Therefore, in order to solve the above problems existing in the prior art, it is necessary to develop a new semiconductor substrate heating device.

Summary of the Invention

[0006] The object of the present invention is to provide a semiconductor substrate heating device, a semiconductor device including the semiconductor substrate heating device, and a temperature control method for the semiconductor device, thereby effectively controlling the temperature uniformity of the semiconductor substrate while minimizing the manufacturing and maintenance costs.

[0007] To achieve the above objective, the semiconductor substrate heating apparatus of the present invention is Heating cavity and, A main heating section includes a heating plate provided inside the heating cavity, and the bottom surface of the heating plate includes at least one temperature control compensation area. A compensation control unit is provided inside the heating cavity, the upper surface of which is adjacent to the bottom surface of the heating plate, The system includes at least one temperature compensation unit provided between the heating plate and the compensation control unit, and which is communicated with the compensation control unit, The temperature compensation unit and the temperature control compensation region are arranged in correspondence, and temperature compensation adjustment is performed on the temperature control compensation region under the control of the compensation control unit.

[0008] The beneficial effect of the semiconductor substrate heating apparatus of the present invention is that a compensation control unit and several temperature compensation units are provided inside the heating cavity of the semiconductor substrate heating apparatus, the upper surface of the compensation control unit is adjacent to the bottom surface of the heating plate, several temperature compensation units are provided between the heating plate and the compensation control unit and are communicated with the compensation control unit, and each of these units corresponds to several temperature control compensation regions provided on the bottom surface of the heating plate, thereby avoiding complex wiring designs, and allowing temperature compensation adjustments to be performed on the temperature control compensation regions under the control of the compensation control unit, thereby effectively controlling the temperature uniformity of the semiconductor substrate while minimizing manufacturing and maintenance costs.

[0009] Preferably, the temperature compensation unit includes an auxiliary temperature adjustment unit that is communicated with the compensation control unit, and the distance between the uppermost end of the auxiliary temperature adjustment unit and the corresponding temperature control compensation region is 0 or greater.

[0010] More preferably, the auxiliary temperature control unit includes a heat conduction element or a cooling element.

[0011] Preferably, the temperature compensation unit further includes a fixed portion connected to the auxiliary temperature adjustment unit, the auxiliary temperature adjustment unit being fixed to the corresponding temperature control compensation region via the fixed portion.

[0012] Preferably, the semiconductor substrate heating apparatus further includes a partition plate provided between the main heating unit and the compensation control unit, and the temperature compensation unit is provided on the partition plate.

[0013] More preferably, the constituent material of the partition plate includes an insulating material.

[0014] More preferably, the number of partition plates is at least two, and the temperature compensation unit is locked between adjacent partition plates.

[0015] Preferably, the temperature compensation unit further includes a support portion provided at the bottom of the auxiliary temperature adjustment section and an elastic portion provided inside the support portion, wherein the support portion is provided on the partition plate, and the elastic portion, through the action of the support portion, applies force to the auxiliary temperature adjustment section in a direction corresponding to the temperature control compensation region, thereby adjusting the distance between the uppermost end of the auxiliary temperature adjustment section and the corresponding temperature control compensation region.

[0016] More preferably, the support portion includes an inner support portion that supports the auxiliary temperature control portion and an outer support portion that surrounds the inner support portion, with a pitch between the outer wall of the inner support portion and the outer wall of the outer support portion.

[0017] More preferably, one end of the elastic portion is provided inside the outer support portion, and the other end is in contact with the bottom of the inner support portion.

[0018] More preferably, the elastic portion surrounds the bottom of the inner support portion and contacts the partition plate.

[0019] More preferably, a lead hole for passing a lead is provided inside the inner support portion.

[0020] More preferably, a lead hole for passing a lead is provided inside the outer support portion.

[0021] More preferably, the main heating portion further includes a main control portion for temperature control, the compensation control portion is communicatively connected to the main control portion, and performs the temperature compensation adjustment under the control of the main control portion.

[0022] More preferably, a substrate contact region is included on the upper surface of the heating plate, a bottom surface control region corresponding to the substrate contact region is included on the bottom surface of the heating plate, and the temperature control compensation region is an arbitrary region within the bottom surface control region.

[0023] The semiconductor device of the present invention includes the semiconductor substrate heating device.

[0024] The semiconductor device further includes a temperature calibration portion, the main heating portion further includes a main control portion, the temperature calibration portion contacts the heating surface of the heating plate in the semiconductor substrate heating device, acquires temperature calibration information and feeds it back, the main control portion is provided outside the heating cavity, and is communicatively connected to at least one of the compensation control portion and the temperature calibration portion.

[0025] The temperature control method of the semiconductor device of the present invention is as follows: Step S0 of providing the semiconductor device including a heating cavity, a main heating portion, a compensation control portion, and at least one temperature compensation unit; Step S1 of driving at least one of the temperature compensation units by the compensation control portion to perform temperature compensation adjustment on the heating plate of the main heating portion.

Brief Description of the Drawings

[0026] [Figure 1] FIG. 1 is a schematic diagram of a partial structure of a semiconductor substrate heating device according to an embodiment of the present invention. [Figure 2] FIG. 2 is a schematic diagram of a partial structure of another semiconductor substrate heating device according to an embodiment of the present invention. [Figure 3] Figure 3 is a schematic diagram of the enlarged structure of part A shown in Figure 2. [Figure 4] Figure 4 is a schematic structural diagram of a temperature compensation unit according to an embodiment of the present invention. [Figure 5] Figure 5 is a schematic diagram of the internal structure of the temperature compensation unit shown in Figure 4. [Figure 6] Figure 6 is a schematic diagram of the internal structure of another temperature compensation unit according to an embodiment of the present invention. [Figure 7] Figure 7 is a schematic diagram of the operating state of the temperature compensation unit shown in Figure 6 within the heating cavity. [Figure 8] Figure 8 is a schematic diagram of the operating state of a semiconductor device according to an embodiment of the present invention.

Embodiments for Carrying Out the Invention

[0027] In order to more clearly clarify the objectives, technical solutions, and advantages of the embodiments of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are some, but not all, of the embodiments of the present invention. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative efforts shall be included within the protection scope of the present invention. Unless otherwise defined, technical or scientific terms used in this specification shall have the ordinary meaning as understood by those skilled in the technical field to which the present invention pertains. Similar words such as "including" used in this specification mean that the element or thing appearing before the word includes the element or thing cited after the word and their equivalents, but does not exclude other elements or things.

[0028] Embodiments of the present invention provide a semiconductor substrate heating device that can improve the uniformity of temperature control of a semiconductor substrate while minimizing manufacturing and maintenance costs.

[0029] The semiconductor substrate heating device according to an embodiment of the present invention includes a heating cavity, a main heating unit, a compensation control unit, and at least one temperature compensation unit.

[0030] In some embodiments, the main heating section includes a main control unit, a heating plate, and a main heating unit provided on the heating plate, wherein the main control unit is communicated with the main heating unit. The main control unit is used for temperature control. The main control unit performs temperature control on the main heating unit, the main heating unit generates heat on the heating surface of the heating plate, a semiconductor substrate is placed facing the heating surface of the heating plate, and the heating surface of the heating plate transfers heat to the semiconductor substrate.

[0031] Specifically, the structural relationship between the main control unit, the heating plate, and the main heating unit, and the specific embodiments, are conventional technical means for those skilled in the art and will not be repeated here.

[0032] Figure 1 is a schematic diagram of a partial structure of a semiconductor substrate heating device according to an embodiment of the present invention.

[0033] Referring to Figure 1, in the semiconductor substrate heating apparatus 1, a heating plate 11, at least one temperature compensation unit 12, and a compensation control unit 13 are provided inside the heating cavity (not shown).

[0034] In some embodiments, the bottom surface of the heating plate 11 includes at least one temperature control compensation region.

[0035] In some embodiments, the upper surface of the heating plate includes a substrate contact area, the lower surface of the heating plate includes a bottom surface control area corresponding to the substrate contact area, and the temperature control compensation area is any area within the bottom surface control area.

[0036] The specific range of the temperature control compensation area and the distance between adjacent temperature control compensation areas are determined jointly by the structural performance of the heating plate 11 itself, process requirements, and mounting conditions.

[0037] In some specific embodiments, some of the temperature control compensation regions are distributed in an array with respect to the center of the bottom control region. Specific array distribution types include, but are not limited to, annular and rectangular arrays.

[0038] In some embodiments, referring to Figure 1, the upper surface of the compensation control unit 13 is adjacent to the bottom surface of the heating plate 11, that is, a cavity region is formed between the upper surface of the compensation control unit 13 and the bottom surface of the heating plate 11. At least one of the temperature compensation units 12 is provided in the region between the heating plate 11 and the compensation control unit 13 and is communicated with the compensation control unit 13.

[0039] In some embodiments, the temperature compensation unit 12 and the temperature control compensation region are arranged in correspondence, and temperature compensation adjustment is performed on the temperature control compensation region under the control of the compensation control unit 13.

[0040] In some embodiments, the compensation control unit 13 is connected to the main control unit of the main heating unit via communication and performs the temperature compensation adjustment under the control of the main control unit.

[0041] In some embodiments, the main control unit is located outside the heating cavity, and at least one of the temperature compensation units 12 is located in the region between the heating plate 11 and the compensation control unit 13, and is connected to the compensation control unit 13 in communication, thereby concentrating the wiring within the heating cavity between the heating plate 11 and the compensation control unit 13, avoiding complex wiring designs, and facilitating the attachment, detachment, and maintenance of the semiconductor substrate heating device.

[0042] Furthermore, by electrically connecting the compensation control unit 13 and the main control unit with a single communication lead and controlling the compensation control unit 13, temperature compensation adjustment of the heating plate 11 can be achieved, further avoiding complex wiring designs and facilitating the attachment, detachment, and maintenance of the semiconductor substrate heating device.

[0043] In some specific embodiments, the compensation control unit 13 is a circuit board, and at least one control circuit for controlling the temperature compensation unit 12 is provided on the surface of the circuit board. The specific implementation method of the control may be synchronous control or independent control.

[0044] In some specific embodiments, the compensation control unit 13 includes a control board consisting of a printed circuit board (PCB) and functional devices provided on the PCB.

[0045] In some specific embodiments, the compensation control unit 13 further includes an insulating structure that seals the control board, the insulating structure being able to cover at least one surface of the control board, for example, the upper surface of the control unit facing the bottom surface of the heating plate 11, without affecting the electrical connection between the compensation control unit 13 and the temperature compensation unit 12, thereby avoiding any thermal impact on the functionality of the compensation control unit 13.

[0046] In some specific embodiments, the main control unit is a host computer.

[0047] In some embodiments, referring to Figure 1, the temperature compensation unit 12 includes an auxiliary temperature adjustment unit 121 that communicates with the compensation control unit 13.

[0048] In some embodiments, the auxiliary temperature control unit 121 includes a heat conduction element or a cooling element to heat or cool a temperature control compensation region corresponding to the bottom surface of the heating plate 11.

[0049] In some embodiments, the auxiliary temperature adjustment unit 112 and the heating plate 11 interact in a contact manner, that is, the distance between the uppermost end of the auxiliary temperature adjustment unit 121 and the corresponding temperature control compensation region (not shown) is 0, and as a result, the uppermost end of the auxiliary temperature adjustment unit 121 is in close contact with the temperature control compensation region (not shown).

[0050] In some embodiments, the temperature compensation unit 12 further includes a fixed portion connected to the auxiliary temperature adjustment unit 121, the auxiliary temperature adjustment unit 121 being fixed to the corresponding temperature control compensation region via the fixed portion.

[0051] In some specific embodiments, the heat conduction element of the auxiliary temperature control unit 121 is a ceramic heating sheet.

[0052] In some specific embodiments, the cooling element of the auxiliary temperature control unit 121 is a semiconductor cooling chip.

[0053] In some specific embodiments, the fixing part is a heat-resistant adhesive.

[0054] In some embodiments, the auxiliary temperature control unit 121 is a small gas supply assembly.

[0055] In some embodiments, the miniature gas supply assembly is configured to spray clean refrigerant gas into the corresponding temperature control compensation region under the control of the compensation control unit 13.

[0056] In some embodiments, the miniature gas supply assembly includes a gas circulation pipeline that is positioned corresponding to each of the temperature control compensation regions, and the miniature gas supply assembly is configured to circulate a clean refrigerant gas through the gas circulation pipeline under the control of the compensation control unit 13 to cool the corresponding temperature control compensation region.

[0057] In some embodiments, the auxiliary temperature control unit 121 is a small liquid supply assembly.

[0058] In some embodiments, the miniature liquid supply assembly includes a liquid circulation line positioned corresponding to each of the temperature control compensation regions, and the miniature liquid supply assembly is configured to circulate a heated liquid in the liquid circulation line under the control of the compensation control section 13 so as to raise the temperature of the corresponding temperature control compensation region.

[0059] Figure 2 is a schematic diagram of a partial structure of another semiconductor substrate heating apparatus according to an embodiment of the present invention. Figure 3 is a schematic diagram of an enlarged view of the structure of part A shown in Figure 2.

[0060] In some embodiments, referring to Figures 2 and 3, the temperature compensation unit 12 is suspended between the heating plate 11 and the compensation control unit 13, so that the distance between the uppermost end of the auxiliary temperature adjustment unit 121 and the corresponding temperature control compensation region is greater than 0. The auxiliary temperature adjustment unit 121 and the heating plate 11 interact non-contact.

[0061] In some specific embodiments, the heating element of the auxiliary temperature control unit 121 is an LED light or a halogen lamp.

[0062] In some embodiments, the semiconductor substrate heating apparatus further includes a partition plate provided inside the heating cavity. Referring to Figures 2 and 3, the partition plate 21 is provided between the heating plate 11 and the compensation control unit 13, and the temperature compensation unit 12 is provided on the partition plate 21.

[0063] In some embodiments, the constituent material of the partition plate 21 includes an insulating material, which helps maintain the heat transfer effect of the heating plate 11.

[0064] In some embodiments, the number of partition plates 21 is at least two, and the temperature compensation unit 12 is locked between adjacent partition plates 21. Referring to Figure 3, the partition plates 21 include adjacent first partition plate 31 and second partition plate 32, and the temperature compensation unit 12 is locked between the first partition plate 31 and the second partition plate 32.

[0065] Figure 4 is a schematic diagram of the temperature compensation unit according to an embodiment of the present invention. Figure 5 is a schematic diagram of the internal structure of the temperature compensation unit shown in Figure 4.

[0066] In some embodiments, referring to Figures 3 to 5, the temperature compensation unit 12 further includes a support portion 41 provided at the bottom of the auxiliary temperature adjustment unit 121, and an elastic portion 51 provided inside the support portion 41. The support portion 41 is provided on the partition plate 21, and through the action of the support portion 41, the elastic portion 51 applies force to the auxiliary temperature adjustment unit 121 in a direction corresponding to the temperature control compensation region (not shown), thereby adjusting the distance between the uppermost end of the auxiliary temperature adjustment unit 121 and the corresponding temperature control compensation region (not shown).

[0067] In some embodiments, the support portion 41 acts to apply force to the auxiliary temperature adjustment portion 121 in a direction corresponding to the temperature control compensation region (not shown), causing the uppermost end of the auxiliary temperature adjustment portion 121 to be in close contact with the corresponding temperature control compensation region (not shown).

[0068] In some embodiments, referring to Figures 4 and 5, the support portion 41 includes an inner support portion 411 that supports the auxiliary temperature control portion 121 and an outer support portion 412 that surrounds the inner support portion 411, with a pitch between the outer wall of the inner support portion 411 and the outer wall of the outer support portion 412.

[0069] In some embodiments, referring to Figures 3 and 5, one end of the elastic portion 51 is provided inside the outer support portion 412, and the other end is in contact with the bottom of the inner support portion 411.

[0070] In some embodiments, one end of the elastic portion 51 is fixed inside the outer support portion, and the other end is in contact with the bottom of the inner support portion 411. The elastic portion 51 is in a compressed operating state, and force is applied to the auxiliary temperature adjustment portion 121 in a direction corresponding to the temperature control compensation region (not shown), causing the uppermost end of the auxiliary temperature adjustment portion 121 to be in close contact with the corresponding temperature control compensation region (not shown).

[0071] In some embodiments, referring to Figure 5, the top portion of the outer support portion 412 includes a recessed structure 52, the auxiliary temperature adjustment unit 121 is fixedly positioned on the top portion of the inner support portion 411, at least a portion of the inner support portion 411 is housed inside the recessed structure 52, the recessed structure 52 defines the radial range of movement of the inner support portion 411, thereby allowing the auxiliary temperature adjustment unit 121 to act effectively on the corresponding temperature control compensation region (not shown).

[0072] In some embodiments, referring to Figures 3 and 5, a first lead hole 53 for passing a lead is provided inside the inner support portion 411, and a second lead hole 54 for passing a lead is provided inside the outer support portion 412. The first lead hole 53 and the second lead hole 54 are in communication, and the elastic portion 51 has a hollow structure with both ends in communication with the first lead hole 53 and the second lead hole 54. As a result, a communication lead (not shown) provided in the compensation control unit 13 can be electrically connected to the auxiliary temperature control unit 121 by passing through the second lead hole 54, the elastic portion 51, and the first lead hole 53.

[0073] In some specific embodiments, the elastic portion 51 is a spring.

[0074] Figure 6 is a schematic diagram of the internal structure of another temperature compensation unit according to an embodiment of the present invention, and Figure 7 is a schematic diagram of the operating state of the temperature compensation unit shown in Figure 6 within the heating cavity.

[0075] In some embodiments, referring to Figures 6 and 7, the elastic portion 51 surrounds the bottom of the inner support portion 411 and contacts the partition plate 21. Specifically, the outer support portion 412 penetrates the first partition plate 31, and its bottom contacts the second partition plate 32. The projection structure 63 at the bottom of the outer support portion 412 engages between the first partition plate 31 and the second partition plate 32, thereby detachably fixing the outer support portion 412 to the partition plate 21. The bottom of the elastic portion 51 and the top of the second partition plate 32 are in contact.

[0076] In some embodiments, referring to Figures 6 and 7, the inner support portion 411 includes a bottom projection structure 61, and the elastic portion 51 movably surrounds the bottom projection structure 61. The elastic portion 51 is in a compressed operating state and applies force to the auxiliary temperature adjustment portion 121 in a direction corresponding to the temperature control compensation region (not shown), causing the uppermost end of the auxiliary temperature adjustment portion 121 to be in close contact with the corresponding temperature control compensation region (not shown).

[0077] In some embodiments, referring to Figures 6 and 7, the inner support portion 411 includes a top projection structure 62, the top portion of the outer support portion 412 surrounds the top projection structure 62, and the top projection structure 62 defines the range of movement of the outer support portion 412 in the axial direction.

[0078] In some embodiments, referring to Figures 6 and 7, a communication lead (not shown) provided in the compensation control unit 13 can be electrically connected to the auxiliary temperature control unit 121 through the first lead hole 53 provided in the inner support unit 411.

[0079] Figure 8 is a schematic diagram showing the operating state of a semiconductor device according to an embodiment of the present invention.

[0080] Referring to Figures 1 and 8, the semiconductor device shown in Figure 8 includes the semiconductor substrate heating device 1 and temperature calibration unit 83 shown in Figure 1. The outer wall 15 and sealing plate 14 shown in Figure 1 constitute the structural components of the housing cavity 82 shown in Figure 8, and the housing cavity 82 and cover 81 form a heating cavity.

[0081] Referring to Figures 1 and 8, the temperature calibration unit 83 is in contact with the upper surface of the heating plate 11, acquires temperature calibration information and provides feedback, and the main control unit 86 is located outside the heating cavity (not shown) and is in communication connection with at least one of the compensation control unit 13 and the temperature calibration unit 84.

[0082] In some specific embodiments, the temperature calibration unit 83 includes a temperature measuring wafer 84 and a temperature sensor feedback device 85 that are connected to it via a communication link. The temperature measuring wafer 84 is connected to the main control unit 86 via the temperature sensor feedback device 85.

[0083] In the temperature control method for the semiconductor device according to an embodiment of the present invention, the compensation control unit 13 drives at least one of the temperature compensation units 12 to perform temperature compensation adjustment on the heating plate 11.

[0084] In some embodiments, the step of driving at least one of the temperature compensation units 12 to perform temperature compensation adjustment on the heating plate 11 by the compensation control unit 13 includes controlling the compensation control unit 13 via the main control unit 86 to drive at least one of the temperature compensation units 12 to perform temperature compensation adjustment on the heating plate 11.

[0085] In some embodiments, before performing the step of controlling the compensation control unit 13 via the main control unit 86, the temperature measuring wafer 84 is placed on the upper surface of the heating plate 11, and the temperature of each temperature control region of the heating plate 11 is raised under the control of the main control unit 86, thereby causing the temperature of the temperature measuring wafer 84 to reach the target temperature.

[0086] Specifically, while the heating plate 11 is heating up, the temperature sensor feedback device 85 feeds back the temperature values ​​of each temperature measurement sampling point of the temperature measurement wafer 84 to the main control unit 86. The main control unit 86 compares the average temperature calculated based on the received temperature values ​​of each temperature measurement sampling point with the target temperature and determines whether or not the temperature measurement wafer has reached the target temperature.

[0087] In conventional technology, the temperature uniformity of the heating plate 11 is typically adjusted by performing zone-specific control over the heating plate 11. For example, the heating plate 11 is divided into 7 zones, 13 zones, 15 zones, etc. Considering the layout requirements of the functional devices and the limitations on wiring installation, the number of zones on the heating plate 11 cannot be made infinitely large, and each zone includes several temperature measurement sampling points on the temperature measurement wafer 84. For example, if a particular zone is indicated from the temperature measurement wafer 84, for example, if the temperature uniformity of the first zone does not meet process requirements and needs to be adjusted to increase the temperature, the main control unit 86 controls the first zone to increase its temperature. However, this adjustment has the following problems: The average temperature of some of the temperature measurement sampling points in some of the temperature measurement sampling points included in the first zone will be lower than the target temperature, while the temperature of some of these temperature measurement sampling points will be higher than the target temperature, and the temperature difference between them and the target temperature will likely be different from each other. Even in each temperature-controlled region where the temperature is lower than the target temperature, the temperature difference from the target temperature will likely be different from each other. It can be seen that temperature control in a single zone easily leads to the problem of temperature non-uniformity across the entire range of the heating plate 11.

[0088] Furthermore, the above-described zone-based control method requires independent temperature control for each zone, which significantly increases the cost of the temperature control unit, and the cost increases with the number of zones.

[0089] In the technical solution of the embodiment of the present invention, after the temperature of the temperature measuring wafer 84 reaches the target temperature, temperature information of each temperature measuring area of ​​the temperature measuring wafer 84 is acquired via the temperature sensor feedback device 85. Based on this temperature information, several temperature control compensation areas of the bottom surface of the heating plate 11 that require temperature compensation adjustment are determined. The compensation control unit 13 is controlled to drive the corresponding temperature compensation unit 12 to raise or cool the temperature, thereby achieving the purpose of temperature compensation adjustment.

[0090] While embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and changes can be made to these embodiments. However, it should be understood that such modifications and changes are within the scope and spirit of the invention as set forth in the claims. Furthermore, other embodiments of the invention described herein are possible and can be carried out or realized in various ways.

Claims

1. Heating cavity and, The main heating section includes a heating plate provided inside the heating cavity, and the bottom surface of the heating plate includes at least one temperature control compensation region. A compensation control unit is provided inside the heating cavity, the upper surface of which is adjacent to the bottom surface of the heating plate, The system includes at least one temperature compensation unit provided between the heating plate and the compensation control unit, and which is communicated with the compensation control unit. The temperature compensation unit is positioned in correspondence with the temperature control compensation region, and under the control of the compensation control unit, temperature compensation adjustment is performed on the temperature control compensation region. The temperature compensation unit includes an auxiliary temperature adjustment unit that is communicated with the compensation control unit, and the distance between the uppermost end of the auxiliary temperature adjustment unit and the corresponding temperature control compensation region is 0 or greater. The temperature compensation unit further includes a partition plate provided between the main heating unit and the compensation control unit, and the temperature compensation unit is provided on the partition plate. A semiconductor substrate heating apparatus characterized in that the number of partition plates is at least two, and the temperature compensation unit is locked between adjacent partition plates.

2. The semiconductor substrate heating apparatus according to claim 1, characterized in that the auxiliary temperature control unit includes a heat conduction element or a cooling element.

3. The semiconductor substrate heating apparatus according to claim 1, characterized in that the temperature compensation unit further includes a fixed portion connected to the auxiliary temperature adjustment unit, and the auxiliary temperature adjustment unit is fixed to the corresponding temperature control compensation region via the fixed portion.

4. The semiconductor substrate heating apparatus according to claim 1, characterized in that the constituent material of the partition plate includes an insulating material.

5. The semiconductor substrate heating apparatus according to claim 1, wherein the temperature compensation unit further includes a support portion provided at the bottom of the auxiliary temperature adjustment section and an elastic portion provided inside the support portion, the support portion being provided on the partition plate, and the elastic portion, by the action of the support portion, applies force to the auxiliary temperature adjustment section in a direction corresponding to the temperature control compensation region, thereby adjusting the distance between the uppermost end of the auxiliary temperature adjustment section and the temperature control compensation region corresponding thereto.

6. The semiconductor substrate heating apparatus according to claim 5, wherein the support portion includes an inner support portion that supports the auxiliary temperature adjustment portion and an outer support portion that surrounds the inner support portion, and there is a pitch between the outer wall of the inner support portion and the outer wall of the outer support portion.

7. The semiconductor substrate heating apparatus according to claim 6, characterized in that one end of the elastic portion is provided inside the outer support portion, and the other end is in contact with the bottom of the inner support portion.

8. The semiconductor substrate heating apparatus according to claim 6, characterized in that the elastic portion surrounds the bottom of the inner support portion and contacts the partition plate.

9. The semiconductor substrate heating apparatus according to claim 6, characterized in that a lead hole for passing a lead is provided inside the inner support portion.

10. The semiconductor substrate heating apparatus according to claim 6, characterized in that lead holes for passing leads are provided inside the outer support portion.

11. The semiconductor substrate heating apparatus according to claim 1, wherein the main heating unit further includes a main control unit for temperature control, and the compensation control unit is connected to the main control unit in communication and performs the temperature compensation adjustment under the control of the main control unit.

12. The semiconductor substrate heating apparatus according to claim 1, characterized in that the upper surface of the heating plate includes a substrate contact region, the bottom surface of the heating plate includes a bottom surface control region corresponding to the substrate contact region, and the temperature control compensation region is any region within the bottom surface control region.

13. A semiconductor device comprising a semiconductor substrate heating apparatus as described in any one of claims 1 to 12.

14. The semiconductor device according to claim 13, further comprising a temperature calibration unit, the main heating unit further comprising a main control unit, the temperature calibration unit contacts the heating surface of the heating plate in the semiconductor substrate heating device to acquire and feed back temperature calibration information, and the main control unit is provided outside the heating cavity and is in communication connection with at least one of the compensation control unit and the temperature calibration unit.

15. Step S0 provides the semiconductor device, which includes a heating cavity, a main heating section, a compensation control section, and at least one temperature compensation unit. The method for controlling the temperature of a semiconductor device according to claim 13, characterized by including step S1 of driving at least one of the temperature compensation units so as to perform temperature compensation adjustment on the heating plate of the main heating unit by the compensation control unit.

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