CMP conditioning disc and method for manufacturing a CMP conditioning disc

Abstract

To provide: a CMP conditioning disc capable of having a plurality of diamonds uniformly arranged on a shank base; and a method of manufacturing the CMP conditioning disc.SOLUTION: There is provided a method of manufacturing a CMP conditioning disc according to one embodiment of the present invention, including: a primary forming layer forming step of forming a primary forming layer on an outer surface of a shank base and arranging a plurality of diamonds on the primary forming layer; and a secondary forming layer forming step of forming a secondary forming layer on an upper surface of the primary forming layer and exposing at least a portion of the diamonds in the secondary forming layer. There is also provided a CMP conditioning disc according to one embodiment including: a shank base; a primary forming layer formed on an outer surface of the shank base; a secondary forming layer formed on an outer surface of the primary forming layer; and a plurality of diamonds arranged so as to be filled in the primary forming layer and the secondary forming layer, at least a portion of the diamonds being exposed from the secondary forming layer.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] This invention relates to a CMP conditioning disc and a method for manufacturing a CMP conditioning disc. [Background technology]

[0002] Generally, a planarization process using chemical mechanical polishing (CMP) is a method of polishing a wafer by supplying slurry onto a polishing pad on a platen while the carrier holds the wafer, which is the object to be polished, and then moving the platen and the carrier in a relative motion.

[0003] The numerous foam pores on the surface of the polishing pad serve to hold fresh polishing fluid, enabling consistent polishing efficiency and uniform polishing across the entire wafer surface. However, due to the pressure and relative speed applied during polishing, the surface of the polishing pad deforms unevenly over time, causing the pores on the polishing pad to become clogged with polishing residue, and the polishing pad to no longer perform its function.

[0004] CMP pad conditioners are used to address uneven deformation and pore clogging of polishing pads. CMP pad conditioners can create new micropores in the polishing pad by finely polishing its surface. A type of CMP pad conditioner, the fused pad conditioner, typically involves fixing diamonds to a stainless steel shank using a fusion method to condition the pads during the CMP process. In the diamond setting process for adjusting the diamond position in conventional fused CMP pad conditioners, the diamond is passed through pre-sized holes formed in an etched mask substrate, and the adhesive scattered in the metal powder layer on the shank causes the diamond to seat on the disc.

[0005] Incidentally, with conventional CMP pad conditioners, during the heat treatment process after the diamond setting, the brazing powder becomes liquid and then solidifies. This process causes the part that holds the diamond to become liquid, which can distort the position and orientation of the diamond, potentially leading to an irregular arrangement of the diamond on the shank. [Prior art documents] [Patent Documents]

[0006] [Patent Document 1] Korean Published Patent Publication No. 10-2012-0058303 [Overview of the project] [Problems that the invention aims to solve]

[0007] Embodiments of the present invention aim to provide a CMP conditioning disc and a method for manufacturing a CMP conditioning disc, which can uniformly arrange multiple diamonds on a shank base. [Means for solving the problem]

[0008] According to one aspect of the present invention, a method for manufacturing a CMP conditioning disc can be provided, which includes a primary molding layer formation step of forming a primary molding layer on the outer surface of a shank base and arranging a plurality of diamonds in the primary molding layer, and a secondary molding layer formation step of forming a secondary molding layer on the upper surface of the primary molding layer and exposing at least a portion of the diamonds from the secondary molding layer.

[0009] Furthermore, a method for manufacturing a CMP conditioning disc is provided, wherein the primary molding layer is formed by a brazing process or a sintering process in the primary molding layer formation step, and the secondary molding layer is formed by a brazing process in the secondary molding layer formation step.

[0010] Furthermore, the primary molding layer formation step includes a primary metal powder layer formation step of providing a primary metal powder layer on the outer surface of the shank base and pre-sintering it, an adhesive layer formation step of forming an adhesive layer on the outer surface of the primary metal powder layer, and a primary diamond fixing step of temporarily fixing the diamond on the outer surface of the adhesive layer, thereby providing a method for manufacturing a CMP conditioning disc.

[0011] Furthermore, the primary diamond fixing step provides a method for manufacturing a CMP conditioning disc, in which multiple diamonds are fixed to the primary molding layer so as to maintain an upright position downward from the upper end of the long axis.

[0012] Furthermore, the primary diamond fixing step involves temporarily holding a plurality of diamonds in a regular arrangement of rows and columns in a suction pressurizing device, and then using the suction pressurizing device to pressurize and fix the plurality of diamonds onto the primary molding layer so that the plurality of diamonds remain upright. This provides a method for manufacturing a CMP conditioning disc.

[0013] Furthermore, the method for manufacturing a CMP conditioning disc can be provided, which includes a secondary metal powder layer formation step in which a secondary metal powder layer is pre-sintered onto the outer surface of the primary molding layer to form a secondary molding layer, and a polishing step in which the secondary molding layer is dry-polished so as to completely cover the diamond or expose at least a portion of the diamond.

[0014] Furthermore, the method for manufacturing a CMP conditioning disc can be provided, wherein the secondary molding layer formation step further includes a secondary diamond fixing step in which the diamond is completely fixed to the secondary molding layer by the shrinkage of the dry-polished secondary molding layer.

[0015] According to another aspect of the present invention, a CMP conditioning disk can be provided that includes a shank base, a primary molding layer formed on the outer surface of the shank base, a secondary molding layer formed on the outer surface of the primary molding layer, and a plurality of diamonds arranged to be filled in the primary molding layer and the secondary molding layer, with at least some of the diamonds being exposed from the secondary molding layer.

[0016] Further, a CMP conditioning disk can be provided in which the plurality of diamonds are spaced apart so as to form rows and columns on the outer surface of the secondary molding layer, and are exposed so as to have the same exposure height from the outer surface of the secondary molding layer.

[0017] Also, a CMP conditioning disk can be provided in which the primary molding layer is formed at the same, lower, or higher melting point than the secondary molding layer.

[0018] Also, a CMP conditioning disk can be provided in which the thickness from the outer surface of the primary molding layer to the outer surface of the secondary molding layer is thicker than the thickness between the outer surface of the primary molding layer and the outer surface of the shank base.

[0019] Also, a CMP conditioning disk can be provided that is manufactured according to any of the manufacturing methods of the above CMP conditioning disk.

Advantages of the Invention

[0020] According to an embodiment of the present invention, in the brazing process, by uniformly arranging a plurality of diamonds on the shank base in the X, Y, and Z directions, there is an effect that effective pad conditioning and low diamond wear can be realized.

[0021] Also, according to an embodiment of the present invention, by arranging a plurality of diamonds on the shank base at uniform intervals and uniform height through two molding steps, there is an effect that the pad polishing characteristics (PCR: Pad cut rate) can be improved and the life of the CMP conditioning disk can be extended.

Brief Description of the Drawings

[0022] [Figure 1] It is a configuration diagram of a CMP conditioning disk according to an embodiment of the present invention. [Figure 2] It is an enlarged view showing an enlarged portion "A" of FIG. 1. [Figure 3] It is a photograph taken by enlarging FIG. 1. [Figure 4A] It is a state diagram showing the CMP conditioning disk a of FIG. 1. [Figure 4B] It is a state diagram showing a conventional conditioning disk b. [Figure 5A] It is a photograph showing the diamond arrangement state of the CMP conditioning disk a of the present invention. [Figure 5B] It is a photograph showing the diamond arrangement state of a conventional conditioning disk b. [Figure 6A] It is a photograph showing the diamond arrangement state of the CMP conditioning disk a of the present invention. [Figure 6B] It is a photograph showing the diamond arrangement state of a conventional conditioning disk b. [Figure 7] It is a graph showing the relationship between the pad life and PCR of the CMP conditioning disk a of the present invention and a conventional conditioning disk b. [Figure 8] It is a flowchart showing a manufacturing method of a CMP conditioning disk according to an embodiment of the present invention. [Figure 9] It is a state diagram showing a manufacturing method of a CMP conditioning disk according to an embodiment of the present invention.

Modes for Carrying Out the Invention

[0023] In the following sections, specific embodiments for realizing the concept of the present invention will be described in detail with reference to the drawings.

[0024] In addition, if it is determined that a detailed description of a relevant known configuration or function in the description of the present invention may obscure the gist of the invention, such detailed description will be omitted.

[0025] Furthermore, when it is mentioned that one component is “connected,” “supported,” “linked,” “supplied,” “transmitted,” or “in contact” with another component, it should be understood that this may mean that the other component is directly connected, supported, linked, supplied, transmitted, or in contact with it, or that other components may be present in between.

[0026] The terms used herein are used solely to describe specific embodiments and are not intended to limit the invention. Singular expressions include plural expressions unless the context clearly indicates otherwise.

[0027] In this specification, terms such as "top," "bottom," and "side" are explained with reference to the illustrations in the drawings, and it should be made clear in advance that they may be represented differently if the orientation of the object changes. For the same reason, some components in the attached drawings are exaggerated, omitted, or shown schematically, and the size of each component does not fully reflect the actual size.

[0028] Furthermore, while terms including ordinal numbers such as "first," "second," etc., can be used to describe various components, the corresponding components are not limited by such terms. These terms are used solely for the purpose of distinguishing one component from another.

[0029] As used herein, "includes" embodies a particular characteristic, domain, integer, stage, operation, element and / or component, and does not exclude the presence or addition of other particular characteristics, domains, integers, stages, operations, elements, components and / or groups.

[0030] The specific configurations of the CMP conditioning disc and the method for manufacturing the CMP conditioning disc according to the present invention will be described below with reference to the drawings.

[0031] Figure 1 is a diagram of the configuration of a CMP conditioning disc according to one embodiment of the present invention. Figure 2 is an enlarged view showing part "A" of Figure 1. Figure 3 is a photograph of Figure 1 taken in enlargement. Figure 4A is a state diagram showing CMP conditioning disc a of Figure 1, and Figure 4B is a state diagram showing conventional conditioning disc b. Figure 5A is a photograph showing the diamond arrangement state of CMP conditioning disc a according to one embodiment of the present invention, and Figure 5B is a photograph showing the diamond arrangement state of conventional conditioning disc b. Figure 6A is a photograph showing the diamond arrangement state of CMP conditioning disc a according to one embodiment of the present invention, and Figure 6B is a photograph showing the diamond arrangement state of conventional conditioning disc b. Figure 7 is a graph showing the relationship between pad life and PCR for CMP conditioning disc a according to one embodiment of the present invention and conventional conditioning disc b.

[0032] Referring to Figures 1 to 7, a CMP conditioning disc 10 according to one embodiment of the present invention can uniformly arrange multiple diamonds 400 on a shank base 100. Such a CMP conditioning disc 10 may include a shank base 100, a primary molded layer 200, a secondary molded layer 300, and diamonds 400, as shown in Figure 1. Here, the term "molded layer" is defined and used to represent a region where the powder state before heat treatment, as well as the brazing or sintering state after heat treatment, are distinguished from each other as primary and secondary. When a distinction between pre- and post-heat treatment is necessary, it is expressed as a pre-heat treatment molded layer and a post-heat treatment molded layer or fused layer (brazing layer, used interchangeably with brazing layer), or sintered layer.

[0033] Specifically, the shank base 100 may be the backing plate of the CMP conditioning disc 10. A primary molded layer 200 may be formed on the outer surface of the shank base 100. Since the shank base 100 corresponds to the ordinary shank used in the CMP conditioning disc, a detailed explanation of it will be omitted.

[0034] The primary molding layer 200 may be a fixing layer for temporarily fixing a plurality of diamonds 400 to the outer surface of the shank base 100. For example, the primary molding layer 200 may be a brazing layer formed on the outer surface of the shank base 100 by a brazing process (first brazing process). In this embodiment, the primary molding layer 200 has been described as a brazing layer, but is not limited thereto, and the primary molding layer 200 may be a sintered layer formed on the outer surface of the shank base 100 by a sintering process. A plurality of diamonds 400 can be arranged in a regular form of rows and columns and temporarily fixed (temporarily fixed) in the primary molding layer 200.

[0035] The primary molded layer 200 before heat treatment may include a primary metal powder layer 210 and an adhesive layer 220. The adhesive layer 220 may be an adhesive coating layer for temporarily fixing (pre-fixing) the diamonds 400 to the primary metal powder layer 210. Multiple diamonds 400 can be temporarily fixed in a constant arrangement on the primary metal powder layer 210 to which the adhesive layer 220 is applied. The primary metal powder layer 210 may be applied to the outer surface of the shank base 100 and pre-sintered. The thickness of the primary molded layer may vary depending on the average size of the diamonds used. Typically, #60, #80, #100, and #120 diamonds are mainly used in CMP pad conditioners. For example, when using #80 diamonds with a diameter range of 151 μm to 197 μm and an average diameter of approximately 170 μm, the thickness of the primary molded layer 200 may be 20 μm to 100 μm before brazing (before fusion) and 14 μm to 70 μm after brazing (after fusion). The thickness of the molded layer may vary proportionally to the average size of the diamonds.

[0036] As shown in Figure 2, the thickness L2 from the outer surface of the primary molding layer 200 to the outer surface of the secondary molding layer 300 may be thicker than the thickness L1 between the outer surface of the primary molding layer 200 and the outer surface of the shank base 100. When the thickness L2 from the outer surface of the primary molding layer 200 to the outer surface of the secondary molding layer 300 is thicker than the thickness L1 from the outer surface of the primary molding layer 200 to the outer surface of the shank base 100, the lower center of the diamond 400 is completely fixed by the primary molding layer 200, so when the diamond 400 is filled and fixed by the secondary molding layer 300, the diamond 400 can maintain a stable position by the primary molding layer 200 and the secondary molding layer 300.

[0037] In the fusion process, the melting point of the primary molding layer 200 may be the same as that of the secondary molding layer 300, or it may be higher than that of the secondary molding layer 300. If the melting point of the primary molding layer 200 is higher than that of the secondary molding layer 300, the primary molding layer 200 can be heat-treated at a higher temperature than the secondary molding layer 300. In particular, if the melting point of the primary molding layer 200 is higher than that of the secondary molding layer 300, the primary molding layer 200 can further suppress the positional movement of the diamond 400 during the brazing process of the secondary molding layer 300. If the components of the primary molding layer 200 consist of components with a higher melting point than those of the secondary molding layer 300, even if the entire secondary molding layer 300 is liquefied during the brazing process of the secondary molding layer 300, the primary molding layer 200 can exist in a highly viscous state or in a sintered state (including the solid phase). For example, the brazing temperature for forming the primary molded layer 200 may be 900°C to 1300°C, and the brazing pressure may be 10 × 10 -3 Pa~10×10 -2 Pa may also be used. On the other hand, if the primary molded layer formation is performed as a sintering process, the heat treatment temperature of the primary molded layer 200 may be different from the heat treatment temperature of the secondary molded layer 300.

[0038] The secondary molding layer 300 may be a fixing layer for secondary fixing of multiple diamonds 400 to the outer surface of the shank base 100. For example, the secondary molding layer 300 may be a brazing layer formed on the outer surface of the primary molding layer 200 by a brazing process (second brazing process). The secondary molding layer 300 may be a secondary metal powder layer for completely fixing the diamonds 400. The secondary metal powder layer may have the same composition as the primary metal powder layer 210 of the primary molding layer 200. In this embodiment, the secondary metal powder layer has been described as having the same composition as the primary metal powder layer 210 of the primary molding layer 200, but is not limited to this, and the composition of the secondary metal powder layer may be different from that of the primary metal powder layer 210. If the composition of the secondary metal powder layer and the composition of the primary metal powder layer 210 are different from each other, the melting points of the primary molding layer 200 and the secondary molding layer 300 can be adjusted to be different from each other.

[0039] The secondary molded layer 300 may undergo a heat treatment process in which it is heated to a predetermined temperature range. With the multiple diamonds 400 temporarily fixed by the primary molded layer 200, the multiple diamonds 400 can be completely fixed to the secondary molded layer 300 in a regular arrangement of rows and columns. For example, when using #80 diamond particles with an average size of 170 μm, the thickness of the secondary molded layer 300 can be 100 μm to 250 μm before brazing (before fusion) and 70 μm to 175 μm after brazing (after fusion).

[0040] The diamonds 400 may be provided as a plurality arranged in a regular pattern in the primary molding layer 200 and the secondary molding layer 300. At least a portion of the diamonds 400 can be exposed from the secondary molding layer 300. The diamonds 400 may be pre-sintered in the primary molding layer 200, and their orientation (direction) may be adjusted to an upright position by a separate suction pressurizing device (not shown). Of course, the position and orientation of the diamonds 400 may shift during the sequential heat treatment of the primary molding layer 200 and the secondary molding layer 300, but the movement of the position and orientation of the diamonds 400 can be minimized by the two processes (e.g., brazing) that form the primary molding layer 200 and the secondary molding layer 300.

[0041] As shown in Figure 4A, at least a portion of the diamond 400 exposed from the secondary molding layer 300 may be a polishing portion 400b located at the upper end of the long axis. The diamond 400 can be divided into a body portion 400a filled in the primary molding layer 200 and the secondary molding layer 300, and a polishing portion 400b protruding to the outside from the secondary molding layer 300. In this embodiment, among the multiple vertices of a single diamond 400, a virtual line connecting the two vertices that are opposite each other and furthest apart is defined as an "axis," and the axis with the longest length among the multiple "axes" is defined as the "long axis."

[0042] As shown in Figures 4A, 5A, and 6A, the polishing portion 400b of the diamond 400 can be positioned at as close as possible to the same height as the polishing portions 400b of other diamonds 400. In other words, the length of the diamond 400 exposed from the secondary molding layer 300 can be substantially uniform across the entire diamond 400. In this embodiment, the proportion of the multiple diamonds 400 in which the height difference of the polishing portion 400b of the diamonds 400 is within 50 μm may be 80% or more of the total number of diamonds 400, but is not limited to this, and under optimal conditions, the proportion in which the height difference of the polishing portion 400b of the diamonds 400 is within 50 μm can approach 100% of the total number of diamonds 400.

[0043] The diamond 400 can be positioned in the primary molding layer 200 and the secondary molding layer 300 in an upright position with its long axis extending downward from the upper end. For example, the diamond 400 can be positioned in the primary molding layer 200 and the secondary molding layer 300 at an angle (for example, an angle greater than 50° and less than or equal to 90°) relative to the shank base 100. When the diamond 400 is upright relative to the shank base 100, the top of the lower end of the diamond 400 along its long axis can make point or line contact with the surface of the shank base 100, or be separated by a predetermined distance. The closer the long axis of the diamond 400 is to 90° relative to the shank base 100, the more the diamond 400 will make point or line contact with the polishing pad, and thus the polishing performance of the diamond 400 can be significantly increased.

[0044] Referring to Figure 3, since the diamond 400 is positioned with its long axis upright relative to the shank base 100, the wetting angle (θ) at which the surface of the diamond 400 meets the surface of the secondary molded layer 300 must be less than 90°, preferably less than 60°, and the composition and heat treatment conditions of the secondary molded layer 300 must be configured accordingly. The wetting angle θ is determined by the upward force F V And a downward force F D and a lateral force F LIt can be determined as shown in the following [Equation 1] by the vertical component force with respect to it. [Equation 1] F V =F D +F L cosθ

[0045] When the wetting angle θ exceeds 90°, since the vertical component force of F L is upward, the diamond 400 may receive a greater buoyancy force and float further. When the wetting angle θ is less than 90°, the direction of the vertical component force of the lateral force F L changes to the side downward direction, and the diamond 400 receives a downward force. When the wetting angle θ is greater than 90°, the diamond 400 may be separated from the shank base 100 due to the buoyancy force, resulting in a displacement of the diamond 400. The secondary forming layer 300 may not be able to support the diamond 400 properly, increasing the risk of diamond 400 falling off. A chip pocket for discharging debris generated during the polishing process is not formed in the bonding layer, and the debris cannot be discharged properly, which may significantly reduce the polishing performance.

[0046] The diamond 400 can finely polish the polishing pad P by the polishing portion 400b protruding from the secondary forming layer 300. In this embodiment, since the polishing portions 400b of the plurality of diamonds 400 protrude from the secondary forming layer 300 at uniform intervals and uniform heights, the polishing pad P can be effectively polished.

[0047] On the other hand, in the case of a conventional CMP conditioning disc 1, as shown in Figures 4B, 5B, and 6B, the polishing portions 1-3b that protrude from the brazing layer 1-2 in the body portion 1-3a are arranged in the brazing layer 1-2 of the shank 1-1 at irregular intervals and uneven heights, which can result in lower durability and pad polishing characteristics (PCR: Pad cut rate) compared to the CMP conditioning disc 10 of the present invention. Test results, as shown in Figure 7, confirmed that the CMP conditioning disc 10 of the present invention provides the effect of extending the lifespan by more than 30% compared to the conventional CMP conditioning disc 1.

[0048] The following describes a method for manufacturing a CMP conditioning disc according to one embodiment of the present invention. Figure 8 is a flowchart showing a method for manufacturing a CMP conditioning disc according to one embodiment of the present invention. Figure 9 is a state diagram showing a method for manufacturing a CMP conditioning disc according to one embodiment of the present invention.

[0049] Referring to Figures 8 to 9, the method for manufacturing a CMP conditioning disc according to one embodiment of the present invention, 20, may include a primary molded layer formation step S100 and a secondary molded layer formation step S200.

[0050] In the primary molding layer formation step S100, a primary molding layer 200 is formed on the outer surface of the shank base 100, and a plurality of diamonds 400 are temporarily fixed to the primary molding layer 200. In the primary molding layer formation step S100, the primary molding layer 200 may also be formed by a fusion process. In this embodiment, the primary molding layer formation step S100 includes a brazing process, but is not limited thereto, and the primary molding layer formation step S100 may also include a sintering process.

[0051] The primary molding layer formation step S100 may include a primary metal powder layer formation step S110, an adhesive layer formation step S120, and a primary diamond fixing step S130.

[0052] In the primary metal powder layer formation step S110, primary metal powder is applied to the outer surface of the shank base 100 and brazed. The primary metal powder layer 210 may be applied to the outer surface of the shank base 100 in slurry form and pre-sintered. For example, in the brazing step of the primary metal powder layer 210, if the primary metal powder is applied to the outer surface of the shank base 100 in powder form, the primary metal powder may be pre-sintered as the primary metal powder layer 210.

[0053] In the primary metal powder layer formation step S110, the primary molding layer 200 is provided as a slurry-like primary metal powder layer 210. During the brazing process for the primary metal powder layer 210, if the thickness of the primary metal powder layer 210 is reduced during brazing, the primary metal powder layer 210 can shrink and fix the diamond 400 while minimizing the positional movement of the diamond 400. The primary metal powder layer 210 may be pre-sintered at a temperature of 600°C to 1000°C. In this case, there is almost no change in the thickness of the primary metal powder layer 210.

[0054] In the primary metal powder layer formation step S110, the thickness of the primary metal powder layer 210 may be adjusted by polishing after pre-sintering. When the thickness of the primary metal powder layer is reduced, the lower end of the diamond 400 can be positioned as close as possible to the outer surface of the shank base 100 when the diamond 400 separates from the outer surface of the shank base 100.

[0055] In the adhesive layer formation step S120, an adhesive layer 220 is formed on the outer surface of the primary metal powder layer 210. The adhesive layer 220 can be formed by applying (spraying) a slurry-like adhesive to the outer surface of the primary metal powder layer 210.

[0056] In the primary diamond fixing step S130, multiple diamonds 400 are fixed to the primary molded layer 200. For example, multiple diamonds 400 can be press-fitted into the pre-sintered layer of the primary metal powder layer 210 and fixed by the adhesive layer 220.

[0057] In the primary diamond fixing step S130, the multiple diamonds 400 can be temporarily fixed (temporarily fixed) in an upright position on the primary molding layer 200 in a regular arrangement of rows and columns. The multiple diamonds 400 may also be oriented by a separate suction pressurizing device. For example, the multiple diamonds 400 may be positioned at an upright angle relative to the primary molding layer 200 by the suction pressurizing device. The suction pressurizing device can temporarily fix the multiple diamonds 400 on the primary molding layer 200 by temporarily holding the multiple diamonds 400 in a regular arrangement of rows and columns, pressurizing the multiple diamonds 400 on the primary molding layer 200, and then releasing the hold on the diamonds 400. If directional control of the multiple diamonds 400 is not required, the multiple diamonds 400 can be fixed to the surface of the primary metal powder layer 210 or the pre-sintered layer with an adhesive. In this case, because the thickness of the primary molding layer 200 is thin, the movement of the position and orientation of the diamonds 400 can be minimized.

[0058] In the primary diamond fixing step S130, the multiple diamonds 400 can be heat-treated while fixed to the primary molding layer 200. The heat treatment temperature may be between 1000°C and 1300°C. The heat treatment temperature may be the same as, or different from, the heat treatment temperature of the secondary molding layer 300. At this time, the thickness of the primary molding layer 200 may be reduced by approximately 30%. (This thickness is the thickness of the primary molding layer after brazing.)

[0059] With the primary diamond fixing step S130 completed, the diamond can be fixed in contact with or close to the shank base 100, with minimal movement in position or direction. Even if the density of the primary molded layer 200 is about twice that of the diamond, the thickness of the primary molded layer after heat treatment is less than half the size of the diamond, so the positional movement of the diamond can be minimized.

[0060] In the secondary molding layer formation step S200, the secondary molding layer 300 can be formed on the outer surface of the primary molding layer 200, providing an environment for at least a portion of the diamond 400 to be exposed from the secondary molding layer 300. In the secondary molding layer formation step S200, the secondary molding layer 300 can be formed by a brazing step. The secondary molding layer formation step S200 may include a secondary metal powder layer formation step S210, a polishing step S220, and a secondary diamond fixing step S230.

[0061] In the secondary metal powder layer formation step S210, the secondary molded layer 300 is brazed by providing a secondary metal powder layer on the outer surface of the primary molded layer 200. During the brazing process of the secondary molded layer 300, when the secondary metal powder is applied to the outer surface of the primary molded layer 200, the secondary metal powder can be pre-sintered as the secondary molded layer 300.

[0062] In polishing step S220, the secondary molded layer 300 is dry polished, exposing at least a portion of the diamond 400 from the secondary molded layer 300. In this embodiment, the pressure for dry polishing the secondary molded layer 300 may be 0 Psi to 3 Psi, and the rotational speed for polishing may be 30 RPM to 130 RPM.

[0063] In the secondary diamond fixing step S230, a heat treatment process is provided to shrink the dry-polished secondary molded layer 300. Multiple diamonds 400 can be finally and completely fixed in the secondary molded layer 300 by the heat treatment process. The heat treatment temperature may be 1000°C to 1300°C. During the heat treatment process, the thickness of the secondary molded layer 300 decreases, and the diamonds can protrude relatively from the secondary molded layer 300. When the diamond fixing step S130 of the primary molded layer 200 is completed, the diamonds are fixed in contact with or close to the shank base 100. At this time, even if remelting occurs in some areas of the primary molded layer 200, no further shrinkage occurs in the primary molded layer 200. Therefore, the displacement of the diamonds 400 is suppressed, and even if the secondary molded layer 300 melts and shrinks in thickness due to brazing, the movement of the diamonds can be minimized.

[0064] As described above, the present invention, through the primary and secondary molding layer formation steps, has the primary molding layer already shrunk, so there is no change in volume (thickness) during the secondary heat treatment, and diamond migration can be suppressed. In particular, if the components of the primary molding layer and the secondary molding layer are different, diamond migration suppression is more effective when the viscosity is high, even if the material is in a solid phase, liquid phase sintered state, or 100% liquefied state during the secondary molding process. [Explanation of Symbols]

[0065] 10: CMP conditioning disc, 100: Shank base, 200: Primary molding layer, 210: Primary metal powder layer, 220: Adhesive layer, 300: Secondary molding layer, 400: Diamond, 400a: Body part, 400b: Polishing part

Claims

1. A primary molding layer formation step in which a primary molding layer is formed on the outer surface of the shank base and a plurality of diamonds are placed in the primary molding layer, and The process includes a secondary molding layer formation step in which a secondary molding layer is formed on the upper surface of the primary molding layer, and at least a portion of the diamond is exposed from the secondary molding layer. The thickness of the secondary molded layer is greater than the thickness of the primary molded layer. The aforementioned primary molded layer formation step is, This includes forming the primary molded layer by a brazing process or a sintering process, The aforementioned secondary molded layer formation step is The process includes forming the secondary molded layer by a brazing process. A method for manufacturing CMP conditioning discs.

2. A CMP conditioning disc manufactured by the manufacturing method described in claim 1.

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