Polishing pad, manufacturing method therefor and evaluation method

Abstract

The present invention relates to a polishing pad, a manufacturing method therefor and an evaluation method, the polishing pad comprising: an upper pad layer facing a wafer; and a lower pad layer for supporting the upper pad layer, wherein the upper pad layer has a ratio of temperature-elongation change (ROTEC), represented by mathematical formula 1, of 50-200%, and comprises a polyurethane prepolymer, a curing agent and a pore-forming agent. [Mathematical formula 1] A is the elongation of the upper pad layer, measured by performing stretching at a rate of 300 mm / min at 25 °C, and B is the elongation of the upper pad layer, measured by performing stretching at a rate of 300 mm / min at 100 °C.

Description

Polishing pad, method of manufacturing and evaluation method thereof

[0001] The present invention relates to a polishing pad, a method for manufacturing the same, and a method for evaluating the same.

[0002] Chemical mechanical planarization (CMP) is a process introduced for the global planarization of semiconductor devices during the semiconductor manufacturing process. Specifically, the CMP process is performed by uniformly dispersing a supplied slurry onto the wafer while the polishing pad is in contact with the wafer surface. Through this, the CMP process simultaneously carries out the chemical removal of the wafer film by chemical components in the slurry solution, as well as the physical removal of the wafer film by polishing particles contained in the slurry solution and the surface of the polishing pad.

[0003] The polishing pad is an essential material in the CMP process described above, and the upper pad layer, which comes into direct contact with the wafer, is generally composed of a polyurethane-based material. The upper pad layer is equipped with grooves on its surface that facilitate large slurry flow and pores that support fine slurry flow. However, during the CMP process, the process temperature rises due to friction between the polishing pad and the wafer, in addition to the chemical reaction of the slurry. At this time, if the heat resistance of the upper pad layer containing polyurethane is not secured, the upper pad layer of the polishing pad will be stretched in the high-temperature environment during the CMP process. This leads to glazing of the pores in the upper pad layer and increases the size of the debris generated in the upper pad layer. When the size of the debris generated in the upper pad layer increases, there is a problem in that the frequency of defects occurring on the wafer surface increases when the CMP process is performed using this material.

[0004] Accordingly, as a solution to the aforementioned problem, the inventors completed the present invention after continuous research on a polishing pad in which the heat resistance characteristics of the upper pad layer at high temperatures are secured.

[0005] [Prior Art Literature]

[0006] [Patent Literature]

[0007] (Patent Document 1) Korean Published Patent Application No. 10-2010-0044564

[0008] The present invention provides a polishing pad with secured heat resistance and a method for manufacturing the same.

[0009] In addition, the present invention provides a method for evaluating the polishing performance of a polishing pad simply and conveniently without the need for actual polishing performance testing.

[0010] However, the technical problem that this embodiment aims to solve is not limited to the technical problem described above, and other technical problems may exist.

[0011] According to the first aspect of the present invention,

[0012] The present invention provides a polishing pad.

[0013] In one embodiment of the present invention, the polishing pad comprises an upper pad layer facing a wafer; and a lower pad layer supporting the upper pad layer, wherein the upper pad layer has a temperature elongation variation ratio (ROTEC) value of 50% to 200% as represented by the following mathematical formula 1, and comprises a polyurethane prepolymer, a curing agent, and a pore-forming agent.

[0014] [Mathematical Formula 1]

[0015]

[0016] A is the elongation of the upper pad layer measured by tensile at a speed of 300 mm / min at 25℃, and B is the elongation of the upper pad layer measured by tensile at a speed of 300 mm / min at 100℃.

[0017] In one embodiment of the present invention, the upper pad layer facing the wafer, wherein the polishing pad comprises: (A) a first zone formed in a circular area having a radius corresponding to 1 / 10 to 4 / 10 of the polishing pad radius from the center point of the polishing pad; (B) a second zone formed in a portion excluding the first zone in a circular area having a radius corresponding to 3 / 10 to 7 / 10 of the polishing pad radius from the center point of the polishing pad, and including a radial straight groove; (C) a third zone formed in a portion excluding the first zone and the second zone in a circular area having a radius corresponding to 6 / 10 to 9 / 10 of the polishing pad radius from the center point of the polishing pad; and (D) a fourth zone formed between the outer periphery of the third zone and the outer periphery of the polishing pad, and including a radial straight groove; wherein the radial straight grooves formed in the second zone and the fourth zone are formed to form an inner angle of 30 to 72 degrees with respect to the center point of the polishing pad with respect to adjacent radial grooves.

[0018] In one embodiment of the present invention, the upper pad layer facing the wafer, wherein the polishing pad comprises: (A) a first zone formed in a circular area having a radius corresponding to 1 / 10 to 4 / 10 of the polishing pad radius from the center point of the polishing pad; (B) a second zone formed in a portion excluding the first zone in a circular area having a radius corresponding to 3 / 10 to 7 / 10 of the polishing pad radius from the center point of the polishing pad, and including a radial straight groove; (C) a third zone formed in a portion excluding the first zone and the second zone in a circular area having a radius corresponding to 6 / 10 to 9 / 10 of the polishing pad radius from the center point of the polishing pad; and (D) a fourth zone formed between the outer periphery of the third zone and the outer periphery of the polishing pad, and including a radial straight groove; wherein the radial straight groove formed in the second zone and the fourth zone is formed to form an internal angle of 30 to 72 degrees with respect to the center point of the polishing pad with respect to an adjacent radial groove, and a concentric groove is further formed in at least one of the second zone and the fourth zone.

[0019] In one embodiment of the present invention, the upper pad layer facing the wafer, wherein the polishing pad comprises: (A) a first zone formed in a circular area having a radius corresponding to 1 / 10 to 4 / 10 of the polishing pad radius from the center point of the polishing pad; (B) a second zone formed in a portion excluding the first zone in a circular area having a radius corresponding to 3 / 10 to 7 / 10 of the polishing pad radius from the center point of the polishing pad, and including a radial straight groove; (C) a third zone formed in a portion excluding the first zone and the second zone in a circular area having a radius corresponding to 6 / 10 to 9 / 10 of the polishing pad radius from the center point of the polishing pad; and (D) a fourth zone formed between the outer periphery of the third zone and the outer periphery of the polishing pad, and including a radial straight groove; wherein the radial straight groove formed in the second zone and the fourth zone is formed to form an angle of 30 to 72 degrees with respect to the center point of the polishing pad and adjacent radial grooves, and a concentric groove is further formed in at least one of the first zone and the third zone.

[0020] In one embodiment of the present invention, the upper pad layer facing the wafer, wherein the polishing pad comprises: (A) a first zone formed in a circular area having a radius corresponding to 1 / 10 to 4 / 10 of the polishing pad radius from the center point of the polishing pad; (B) a second zone formed in a portion excluding the first zone in a circular area having a radius corresponding to 3 / 10 to 7 / 10 of the polishing pad radius from the center point of the polishing pad, and including a radial straight groove; (C) a third zone formed in a portion excluding the first zone and the second zone in a circular area having a radius corresponding to 6 / 10 to 9 / 10 of the polishing pad radius from the center point of the polishing pad; and (D) a fourth zone formed between the outer periphery of the third zone and the outer periphery of the polishing pad, and including a radial straight groove; wherein the radial straight groove formed in the second zone and the fourth zone is formed to form an inner angle of 30 to 72 degrees with respect to the center point of the polishing pad and adjacent radial grooves, and concentric grooves are further formed in the first to fourth zones.

[0021] In one embodiment of the present invention, the upper pad layer facing the wafer, wherein the polishing pad comprises: (A) a first zone formed in a circular area having a radius corresponding to 1 / 10 to 4 / 10 of the polishing pad radius from the center point of the polishing pad; (B) a second zone formed in a portion excluding the first zone in a circular area having a radius corresponding to 3 / 10 to 7 / 10 of the polishing pad radius from the center point of the polishing pad, and including a straight groove; (C) a third zone formed in a portion excluding the first zone and the second zone in a circular area having a radius corresponding to 6 / 10 to 9 / 10 of the polishing pad radius from the center point of the polishing pad; and (D) a fourth zone formed between the outer periphery of the third zone and the outer periphery of the polishing pad, and including a straight groove; wherein each of the straight grooves formed in the second zone and the fourth zone is formed in multiple numbers, and the straight line passing through the point closest to the center point of the polishing pad among the straight grooves forms an angle of 10 to 67.5 degrees, and in the second zone it is formed to be inclined clockwise and in the fourth zone it is formed to be inclined counterclockwise.

[0022] In one embodiment of the present invention, the upper pad layer facing the wafer, wherein the polishing pad comprises: (A) a first zone formed in a circular area having a radius corresponding to 1 / 10 to 4 / 10 of the polishing pad radius from the center point of the polishing pad; (B) a second zone formed in a portion excluding the first zone in a circular area having a radius corresponding to 3 / 10 to 7 / 10 of the polishing pad radius from the center point of the polishing pad, and including a straight groove; (C) a third zone formed in a portion excluding the first zone and the second zone in a circular area having a radius corresponding to 6 / 10 to 9 / 10 of the polishing pad radius from the center point of the polishing pad; and (D) a fourth zone formed between the outer periphery of the third zone and the outer periphery of the polishing pad, and including a straight groove; wherein each of the straight grooves formed in the second zone and the fourth zone is formed in multiple numbers, and the straight line passing through the point closest to the center point of the polishing pad among the straight grooves forms an angle of 10 to 67.5 degrees, and in the second zone it is formed at an angle in a clockwise direction and in the fourth zone it is formed at an angle in a counterclockwise direction, and concentric grooves are further formed in at least one of the second zone and the fourth zone.

[0023] In one embodiment of the present invention, the upper pad layer facing the wafer, wherein the polishing pad comprises: (A) a first zone formed in a circular area having a radius corresponding to 1 / 10 to 4 / 10 of the polishing pad radius from the center point of the polishing pad; (B) a second zone formed in a portion excluding the first zone in a circular area having a radius corresponding to 3 / 10 to 7 / 10 of the polishing pad radius from the center point of the polishing pad, and including a straight groove; (C) a third zone formed in a portion excluding the first zone and the second zone in a circular area having a radius corresponding to 6 / 10 to 9 / 10 of the polishing pad radius from the center point of the polishing pad; and (D) a fourth zone formed between the outer periphery of the third zone and the outer periphery of the polishing pad, and including a straight groove; wherein each of the straight grooves formed in the second zone and the fourth zone is formed in multiple numbers, and the straight line passing through the point closest to the center point of the polishing pad among the straight grooves forms an angle of 10 to 67.5 degrees, and in the second zone it is formed at an angle in a clockwise direction and in the fourth zone it is formed at an angle in a counterclockwise direction, and concentric grooves are further formed in at least one of the first zone and the third zone.

[0024] In one embodiment of the present invention, the upper pad layer facing the wafer, wherein the polishing pad comprises: (A) a first zone formed in a circular area having a radius corresponding to 1 / 10 to 4 / 10 of the polishing pad radius from the center point of the polishing pad; (B) a second zone formed in a portion excluding the first zone in a circular area having a radius corresponding to 3 / 10 to 7 / 10 of the polishing pad radius from the center point of the polishing pad, and including a straight groove; (C) a third zone formed in a portion excluding the first zone and the second zone in a circular area having a radius corresponding to 6 / 10 to 9 / 10 of the polishing pad radius from the center point of the polishing pad; and (D) a fourth zone formed between the outer periphery of the third zone and the outer periphery of the polishing pad, and including a straight groove; wherein each of the straight grooves formed in the second zone and the fourth zone is formed in multiple numbers, and the straight line passing through the point closest to the center point of the polishing pad among the straight grooves forms an angle of 10 to 67.5 degrees, and in the second zone it is formed at an angle in a clockwise direction and in the fourth zone it is formed at an angle in a counterclockwise direction, and concentric grooves are further formed in the first to fourth zones.

[0025] According to a second aspect of the present invention,

[0026] The present invention provides a method for manufacturing a polishing pad.

[0027] In one embodiment of the present invention, the method for manufacturing a polishing pad comprises: (1) synthesizing a polyurethane prepolymer; (2) mixing the polyurethane prepolymer, a curing agent, and a pore-forming agent to form a mixture; (3) injecting the mixture into a mold and molding it to form a molded article; (4) processing the molded article to manufacture a polishing pad; (5) calculating a temperature elongation variation ratio (ROTEC) value represented by the following mathematical formula 1 from the upper pad layer of the polishing pad; and (6) selecting a product as acceptable if the temperature elongation variation ratio (ROTEC) value satisfies 50% to 200%; and if the range is not satisfied, changing one or more of the conditions of steps (1) to (4) and performing steps (1) to (4) again to obtain an acceptable product that satisfies a temperature elongation variation ratio (ROTEC) value of 50% to 200%.

[0028] [Mathematical Formula 1]

[0029]

[0030] A is the elongation of the upper pad layer measured by tensile at a speed of 300 mm / min at 25℃, and B is the elongation of the upper pad layer measured by tensile at a speed of 300 mm / min at 100℃.

[0031] In one embodiment of the present invention, the weight-average molecular weight of the polyurethane prepolymer is 500 g / mol to 3,000 g / mol.

[0032] In one embodiment of the present invention, the polyurethane prepolymer is prepared by a polymerization reaction of a composition comprising one or more isocyanate compounds selected from the group consisting of toluene diisocyanate, 4,4'-diphenylmethane diisocyanate, naphthalene-1,5-diisocyanate, toluidine diisocyanate, paraphenylene diisocyanate, xylene diisocyanate, isophorone diisocyanate, hexamethylene diisocyanate, 4,4'-dicyclohexylmethane diisocyanate, and cyclohexane diisocyanate; and one or more polyol compounds selected from the group consisting of polyether polyol, polycarbonate polyol, polyester polyol, and polycaprolactone polyol.

[0033] In one embodiment of the present invention, the polyurethane prepolymer further comprises one or more chain extenders selected from the group consisting of ethylene glycol, 1,2-propylene glycol, 1,3-propylene glycol, 1,2-butanediol, 1,3-butanediol, 2-methyl-1,3-propanediol, 1,4-butanediol, neopentyl glycol, 1,5-pentanediol, 3-methyl-1,5-pentanediol, 1,6-hexanediol, diethylene glycol, dipropylene glycol, and tripropylene glycol.

[0034] In one embodiment of the present invention, the polyurethane prepolymer further comprises a silicone-based surfactant.

[0035] In one embodiment of the present invention, the curing agent comprises: 4,4'-methylene-bis-(2-chloroaniline); diethyltoluenediamine; 3,5-dimethylthio-2,4-toluenediamine and isomers thereof; 3,5-diethyltoluene-2,4-diamine and isomers thereof; 4,4'-bis-(sec-butylamino)-diphenylmethane; 1,4-bis-(sec-butylamino)-benzene; 4,4'-methylene-bis-(2-chloroaniline); 4,4'-methylene-bis-(3-chloro-2,6-diethylaniline); polytetramethyleneoxide-di-p-aminobenzoate; N,N'-dialkyldiaminodiphenylmethane; p,p'-methylene dianiline; m-phenylenediamine; It is one or more selected from the group consisting of 4,4'-methylene-bis-(2,6-diethylaniline); 4,4'-methylene-bis-(2,3-dichloroaniline); 4,4'-diamino-3,3'-diethyl-5,5'-dimethyl diphenylmethane; 2,2',3,3'-tetrachlorodiaminodiphenylmethane; and trimethylene glycol di-p-aminobenzoate.

[0036] In one embodiment of the present invention, the mass ratio of the polyurethane prepolymer to the curing agent is 70:30 to 90:10.

[0037] In one embodiment of the present invention, the pore-forming agent is one or more selected from the group consisting of volatile liquid foaming agents, inert gases, and solid foaming agents.

[0038] In one embodiment of the present invention, the volatile liquid blowing agent is one or more selected from the group consisting of methyl cellosolve, ethyl cellosolve, cyclohexanone, bis(nonafluorobutyl)(trifluoromethyl)amine, perfluorotributylamine, perfluoro-N-methylmorpholine, perfluorotripentylamine, and perfluorohexane.

[0039] In one embodiment of the present invention, the inert gas is one or more selected from the group consisting of He, Ne, Ar, Kr, Xe, Rn, and N2.

[0040] In one embodiment of the present invention, the solid foaming agent is one or more selected from the group consisting of vinylidene chloride copolymers, acrylonitrile copolymers, methacrylonitrile copolymers, and acrylic copolymers.

[0041] According to the third aspect of the present invention,

[0042] The present invention provides a method for evaluating a polishing pad.

[0043] In one embodiment of the present invention, as a method for evaluating the polishing pad, if the temperature elongation variation ratio (ROTEC) value represented by the following mathematical formula 1 from the upper pad layer of the polishing pad is 50% to 200%, it is determined to be a product with acceptable polishing performance.

[0044] [Mathematical Formula 1]

[0045]

[0046] A is the elongation of the upper pad layer measured by tensile at a speed of 300 mm / min at 25℃, and B is the elongation of the upper pad layer measured by tensile at a speed of 300 mm / min at 100℃.

[0047] In one embodiment of the present invention, when the upper pad layer of the polishing pad is polished by contacting the polishing pad with a disc, if the median size of the impurities generated is 10㎛ to 40㎛, it is determined to be a product that passes the polishing performance test.

[0048] As the present invention ensures the heat resistance characteristics of the polishing pad at high temperatures, the size of impurities generated in the polishing pad is reduced, and the number of defects in the wafer polished using this is reduced, thereby improving the polishing performance of the polishing pad.

[0049] In addition, the present invention allows for the simple and convenient evaluation of the polishing performance of a polishing pad without the need for actual polishing performance tests.

[0050] FIG. 1 is a drawing illustrating a polishing pad according to one embodiment of the present invention.

[0051] FIG. 2 is a drawing illustrating a polishing pad including a first type of groove according to one embodiment of the present invention.

[0052] FIG. 3 is a drawing illustrating a polishing pad including a first type of groove according to one embodiment of the present invention.

[0053] FIG. 4 is a drawing illustrating a polishing pad including a first type of groove according to one embodiment of the present invention.

[0054] FIG. 5 is a drawing illustrating a polishing pad including a first type of groove according to one embodiment of the present invention.

[0055] FIG. 6 is a drawing illustrating a polishing pad including a first type of groove according to one embodiment of the present invention.

[0056] FIG. 7 is a drawing illustrating a polishing pad including a first type of groove according to one embodiment of the present invention.

[0057] FIG. 8 is a drawing illustrating a polishing pad including a second type of groove according to one embodiment of the present invention.

[0058] FIG. 9 is a drawing illustrating a polishing pad including a second type of groove according to one embodiment of the present invention.

[0059] FIG. 10 is a drawing illustrating a polishing pad including a second type of groove according to one embodiment of the present invention.

[0060] FIG. 11 is a drawing illustrating a polishing pad including a second type of groove according to one embodiment of the present invention.

[0061] FIG. 12 is a drawing illustrating a polishing pad including a second type of groove according to one embodiment of the present invention.

[0062] The advantages and features of the present invention and the methods for achieving them will become clear by referring to the embodiments described below in detail together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below but may be implemented in various different forms. These embodiments are provided merely to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the present invention, and the present invention is defined only by the scope of the claims.

[0063] Where measurement conditions and methods are not specifically described for the physical properties described in this specification, said physical properties are measured according to measurement conditions and methods generally used by a person skilled in the art.

[0064] The terms used in this specification are for describing embodiments and are not intended to limit the invention. In this specification, the singular form includes the plural form unless specifically stated otherwise in the text. The terms "comprises" and / or "comprising" used in this specification do not exclude the presence or addition of one or more other components in addition to the components mentioned. Throughout the specification, the same reference numerals refer to the same components, and "and / or" includes each of the mentioned components and all combinations of one or more. Although terms such as "first," "second," etc., are used to describe various components, these components are not limited by these terms. These terms are used merely to distinguish one component from another. Therefore, the first component mentioned below may be the second component within the technical scope of the invention.

[0065] Unless otherwise defined, all terms used herein (including technical and scientific terms) may be used in a meaning commonly understood by those skilled in the art to which the present invention pertains. Additionally, terms defined in commonly used dictionaries are not to be interpreted ideally or excessively unless explicitly and specifically defined otherwise.

[0066] In this specification, directions such as front, back, up, down, left, and right that specify relative positions are intended to aid in understanding the invention, and unless otherwise specifically defined, the directions shown in the drawings are used as the reference.

[0067]

[0068] Polishing Pad

[0069]

[0070] In the following, to aid in understanding the present invention, the background of the invention will be explained.

[0071] During the CMP process, the process temperature rises due to the chemical reaction of the slurry and friction between the polishing pad and the wafer. Conventional polishing pads do not provide heat resistance at high temperatures (100°C), so the upper pad layer of the polishing pad stretches at high temperatures, leading to pore clogging and an increase in the size of impurities. Additionally, when the CMP process is performed using a polishing pad that does not provide heat resistance at high temperatures, there is a problem of increased defects on the wafer surface.

[0072] To resolve these problems, the present invention provides a polishing pad in which heat resistance at a high temperature (100°C) is secured, and the difference in elongation between room temperature (25°C) and the high temperature is reduced. Hereinafter, a polishing pad according to one embodiment of the present invention will be described in detail.

[0073]

[0074] According to one embodiment of the present invention, a polishing pad is provided comprising: an upper pad layer facing a wafer; and a lower pad layer supporting the upper pad layer, wherein the upper pad layer has a temperature elongation variation ratio (ROTEC) value of 50% to 200% as represented by the following mathematical formula 1, and comprises a polyurethane prepolymer, a curing agent, and a pore-forming agent.

[0075] [Mathematical Formula 1]

[0076]

[0077] A is the elongation of the upper pad layer measured by stretching at a speed of 300 mm / min at 25°C, and B is the elongation of the upper pad layer measured by stretching at a speed of 300 mm / min at 100°C. Specifically, the above-mentioned temperature elongation variation ratio (ROTEC) value is 50% or more, 60% or more, 70% or more, 80% or more, 90% or more, 200% or less, 190% or less, 180% or less, 170% or less, 160% or less, and may be 50% to 200%, 70% to 180%, or 90% to 160%. By adjusting the above-mentioned temperature elongation variation ratio (ROTEC) value to the above-mentioned range, the size of impurities can be reduced, thereby reducing defects in the wafer.

[0078]

[0079] According to one embodiment of the present invention, the polishing pad includes an upper pad layer facing a wafer and a lower pad layer supporting the upper pad layer. Referring to FIG. 1, the upper pad layer (110) is located on the upper part of the polishing pad (100) and faces the wafer, and the lower pad layer (120) is located on the lower part of the polishing pad (100) and can support the polishing pad (100) during the CMP process. At this time, the polishing pad (100) may additionally include an adhesive layer (not shown) connecting the upper pad layer (110) and the lower pad layer (120). The upper pad layer (110) may include grooves responsible for large flow of slurry and pores supporting fine flow of slurry on the surface that directly contacts the wafer.

[0080]

[0081] Conventional polishing pads are provided with concentric grooves on the upper pad layer facing the wafer, the diameter of which increases sequentially with respect to the center point of the polishing pad. These concentric grooves prevent the slurry from flowing rapidly from the center to the edge of the polishing pad while the CMP process is in progress with the polishing pad and the wafer in close contact, and facilitate the discharge of impurities generated during the conditioning process. In addition, the grooves also perform the function of temporarily storing the slurry flowing into the upper pad layer of the polishing pad and wetting the surface of the polishing pad. However, the concentric grooves of conventional polishing pads had a problem in that they obstructed the slurry supplied to the upper part of the polishing pad from flowing to the edge of the polishing pad, causing the slurry to accumulate within the concentric grooves, and the accumulated slurry solidified within the grooves, thereby damaging the wafer.

[0082] To resolve these problems, the present invention provides a polishing pad with improved polishing performance by including a groove of the following first or second form. Hereinafter, a polishing pad including a groove of the first form and a groove of the second form will be described in detail.

[0083]

[0084] A grinding pad including a groove of the first type

[0085]

[0086] According to one embodiment of the present invention, the upper pad layer facing the wafer, wherein the polishing pad comprises: (A) a first zone formed in a circular area having a radius corresponding to 1 / 10 to 4 / 10 of the polishing pad radius from the center point of the polishing pad; (B) a second zone formed in a portion excluding the first zone in a circular area having a radius corresponding to 3 / 10 to 7 / 10 of the polishing pad radius from the center point of the polishing pad, and including a radial straight groove; (C) a third zone formed in a portion excluding the first zone and the second zone in a circular area having a radius corresponding to 6 / 10 to 9 / 10 of the polishing pad radius from the center point of the polishing pad; and (D) a fourth zone formed between the outer periphery of the third zone and the outer periphery of the polishing pad, and including a radial straight groove; wherein the radial straight grooves formed in the second zone and the fourth zone are formed to form an inner angle of 30 to 72 degrees with respect to the center point of the polishing pad with respect to adjacent radial grooves. Hereinafter, with reference to FIG. 2, a polishing pad including a groove of the first type will be described in detail.

[0087]

[0088] As illustrated in FIG. 2, the first zone (10) is a portion where the slurry is supplied and may be located around the center point of the polishing pad (100). If a radial straight groove (60) is formed in the first zone (10), the slurry will quickly escape out of the first zone (10) along the radial straight groove (60) before it spreads evenly in the first zone (10). To prevent this, a radial straight groove (60) may not be formed in the first zone (10). This allows the slurry to spread out to the second zone (20) outside the first zone (10) while it is spread evenly in the first zone (10), thereby supplying the slurry more evenly to the polishing pad (100) and improving the polishing speed of the polishing pad (100).

[0089] As shown in FIG. 2, the third zone (30) may not have concentric grooves (50) and radial straight grooves (60) formed therein. This allows the third zone (30) to spread the slurry uniformly once again when the slurry has moved unevenly through the second zone (20).

[0090] As shown in FIG. 2, the second zone (20) may have a radial straight groove (60) formed therein. The radial straight groove (60) may allow the slurry, which is uniformly spread in the first zone (10), to move smoothly to the third zone (30).

[0091] As shown in FIG. 2, the fourth zone (40) may have a radial straight groove (60) formed therein. The radial straight groove (60) can allow the slurry used to polish the surface of the wafer in the third zone (30) to move smoothly to the outer periphery of the polishing pad (100). In addition, the radial straight groove (60) increases the amount of slurry newly introduced into the third zone (30) along the second zone (20), thereby allowing the wafer to be effectively polished by the polishing pad (100). Through this, the fourth zone (40) can improve the polishing speed of the polishing pad (100) by controlling the behavior of the slurry. Furthermore, the fourth zone (40) can quickly and smoothly discharge impurities generated when polishing the wafer to the outer periphery of the polishing pad (100).

[0092] According to one embodiment of the present invention, the radius of the first zone (10), the width of the second zone (20), the width of the third zone (30), and the width of the fourth zone (40) are in a ratio of 1 to 1.5 : 1 to 1.5 : 1 to 1.5 : 1 to 1.5 : 1 to 1.5. Specifically, the ratio may be 1 to 1.5 : 1 to 1.5 : 1 to 1.5 : 1 to 1.2 : 1 to 1.2 : 1 to 1.2. If the width (band width) of the third zone (30) exceeds the above-described range, the width of the second zone (20) decreases, thereby reducing the slurry inflow, and if it is below the above-described range, the contact area between the polishing pad (100) and the wafer decreases, which may cause a problem of reduced polishing efficiency. Therefore, by adjusting the above ratio to the range described above, the wafer can be polished uniformly and the polishing speed of the polishing pad (100) can be improved.

[0093] According to one embodiment of the present invention, the radial straight groove (60) is formed on a line extending from the center point of the polishing pad (100) to the outer periphery. At this time, the radial straight groove (60) formed in the second zone (20) and the fourth zone (40) may be formed on the same line extending from the center point of the polishing pad (100) to the outer periphery. Additionally, the radial straight groove (60) formed in the second zone (20) and the fourth zone (40) may be formed on different lines extending from the center point of the polishing pad (100) to the outer periphery.

[0094] According to one embodiment of the present invention, the radial straight groove (60) has a depth of 0.5 mm to 1.0 mm and a width of 0.3 mm to 1.0 mm. At this time, the vertical cross-sectional shape of the radial straight groove (60) may be a semicircle, an ellipse, or a truncated polygon, but is not limited thereto. The width may be measured based on the widest part.

[0095] According to one embodiment of the present invention, the radial straight grooves (60) formed in the second zone (20) and the fourth zone (40) are formed to form an inner angle of 30 to 72 degrees with respect to the center point of the polishing pad and adjacent radial grooves. Specifically, the inner angle may be 30 to 72 degrees or 30 to 60 degrees. By adjusting the inner angle to the range described above, the polishing speed of the polishing pad (100) can be maintained.

[0096]

[0097] According to one embodiment of the present invention, a concentric groove is further formed in at least one of the second and fourth zones. Hereinafter, the polishing pad will be described in detail with reference to FIG. 3.

[0098]

[0099] As illustrated in FIG. 3, the polishing pad (100) has radial straight grooves (60) formed in the second zone (20) and the fourth zone (40), and concentric grooves (50) may be further formed in the second zone (20) and the fourth zone (40). The polishing pad (100) has radial straight grooves (60) formed in the second zone (20) and the fourth zone (40), and concentric grooves (50) may be further formed in the second zone (20). The polishing pad (100) has radial straight grooves (60) formed in the second zone (20) and the fourth zone (40), and concentric grooves (50) may be further formed in the fourth zone (40). Through this, the polishing pad (100) can improve the polishing speed of the polishing pad (100) by controlling the behavior of the slurry.

[0100]

[0101] According to one embodiment of the present invention, a concentric groove is further formed in at least one of the first and third zones. Hereinafter, the polishing pad will be described in detail with reference to FIG. 4.

[0102]

[0103] As illustrated in FIG. 4, the polishing pad (100) has radial straight grooves (60) formed in the second zone (20) and the fourth zone (40), and concentric grooves (50) may be further formed in the first zone (10) and the third zone (30). The polishing pad (100) has radial straight grooves (60) formed in the second zone (20) and the fourth zone (40), and concentric grooves (50) may be further formed in the first zone (10). The polishing pad (100) has radial straight grooves (60) formed in the second zone (20) and the fourth zone (40), and concentric grooves (50) may be further formed in the third zone (30). Through this, the polishing pad (100) can improve the polishing speed of the polishing pad (100) by controlling the behavior of the slurry.

[0104]

[0105] According to one embodiment of the present invention, concentric grooves are further formed in the first to fourth zones. Hereinafter, the polishing pad will be described in detail with reference to FIGS. 5 to 7.

[0106]

[0107] As illustrated in FIG. 5, the first zone (10) is a portion where the slurry is supplied and may be located around the center point of the polishing pad (100). If a radial straight groove (60) is formed in the first zone (10), the slurry will quickly escape out of the first zone (10) along the radial straight groove (60) before it spreads evenly in the first zone (10). To prevent this, the radial straight groove (60) may not be formed in the first zone (10), and only a concentric groove (50) may be formed. Through this, the slurry can spread out to the second zone (20) outside the first zone (10) while it is spread evenly in the first zone (10), so that the slurry is supplied more evenly to the polishing pad (100) and the polishing speed of the polishing pad (100) can be improved.

[0108] As shown in FIG. 5, the third zone (30) may only have concentric grooves (50) formed therein. Through this, the third zone (30) prevents the slurry that has passed through the second zone (20) from rapidly flowing out toward the outer edge of the polishing pad (100), and maintains the slurry in the part of the polishing pad (100) that is in frequent contact with the wafer, thereby improving the polishing speed of the polishing pad (100). Additionally, the third zone (30) can cause the slurry to spread uniformly once again if it has moved unevenly through the second zone (20).

[0109] As shown in FIG. 5, the second zone (20) may be formed with concentric grooves (50) and radial straight grooves (60) formed intersecting therewith. The radial straight grooves (60) can allow the slurry, which is uniformly spread in the first zone (10), to move smoothly to the third zone (30). Additionally, the concentric grooves (50) can maintain the slurry and allow the wafer to be effectively polished by the polishing pad (100). Through this, the second zone (20) can control the behavior of the slurry to improve the polishing speed of the polishing pad (100).

[0110] As shown in FIG. 5, the fourth zone (40) may be formed with concentric grooves (50) and radial straight grooves (60) formed intersecting therewith. The radial straight grooves (60) can allow the slurry used to polish the surface of the wafer in the third zone (30) to move smoothly to the outer periphery of the polishing pad (100). Additionally, the radial straight grooves (60) increase the amount of slurry newly introduced into the third zone (30) along the second zone (20), thereby allowing the wafer to be effectively polished by the polishing pad (100). Through this, the fourth zone (40) can improve the polishing speed of the polishing pad (100) by controlling the behavior of the slurry. Furthermore, the fourth zone (40) can quickly and smoothly discharge impurities generated when polishing the wafer to the outer periphery of the polishing pad (100).

[0111] According to one embodiment of the present invention, the radius of the first zone (10), the width of the second zone (20), the width of the third zone (30), and the width of the fourth zone (40) are in a ratio of 1 to 1.5 : 1 to 1.5 : 1 to 1.5 : 1 to 1.5 : 1 to 1.5. Specifically, the ratio may be 1 to 1.5 : 1 to 1.5 : 1 to 1.5 : 1 to 1.2 : 1 to 1.2 : 1 to 1.2. If the width (band width) of the third zone (30) exceeds the above-described range, the width of the second zone (20) decreases, thereby reducing the slurry inflow, and if it is below the above-described range, the contact area between the polishing pad (100) and the wafer decreases, which may cause a problem of reduced polishing efficiency. Therefore, by adjusting the above ratio to the range described above, the wafer can be polished uniformly and the polishing speed of the polishing pad (100) can be improved.

[0112] According to one embodiment of the present invention, the first zone (10) has a groove-non-forming portion (70) located in the center. The groove-non-forming portion (70) may be formed on a circular surface having a radius of 0.05 to 0.15 times the radius of the polishing pad (100), but is not limited thereto.

[0113] According to one embodiment of the present invention, the concentric groove (50) is formed such that a plurality of circular grooves with different radii are spaced apart from each other with respect to the center point of the polishing pad (100). At this time, the concentric groove (50) can be formed at uniform intervals on the front surface of the polishing pad (100).

[0114] According to one embodiment of the present invention, the concentric groove (50) has a depth of 0.5 mm to 1.0 mm and a width of 0.3 mm to 1.0 mm. At this time, the vertical cross-sectional shape of the concentric groove (50) may be a semicircle, an ellipse, or a truncated polygon, but is not limited thereto. The width may be measured based on the widest part.

[0115] According to one embodiment of the present invention, the concentric groove (50) has a separation distance of 0.5 mm to 4.0 mm from adjacent concentric grooves (50). Specifically, the separation distance may be 0.5 mm to 4.0 mm or 1.0 mm to 3.0 mm.

[0116] According to one embodiment of the present invention, 20 to 70 concentric grooves (50) may be formed in each of the first zone (10), the second zone (20), the third zone (30), and the fourth zone (40). At this time, the number of radial grooves (60) formed in the second zone (20) and the fourth zone (40) may be the same, but is not limited thereto and may be formed in different numbers.

[0117]

[0118] A grinding pad including a second type of groove

[0119]

[0120] According to one embodiment of the present invention, the upper pad layer in which the polishing pad faces a wafer comprises: (A) a first zone formed in a circular area having a radius corresponding to 1 / 10 to 4 / 10 of the polishing pad radius from the center point of the polishing pad; (B) a second zone formed in a portion excluding the first zone in a circular area having a radius corresponding to 3 / 10 to 7 / 10 of the polishing pad radius from the center point of the polishing pad, and including a straight groove; (C) a third zone formed in a portion excluding the first zone and the second zone in a circular area having a radius corresponding to 6 / 10 to 9 / 10 of the polishing pad radius from the center point of the polishing pad; and (D) a fourth zone formed between the outer periphery of the third zone and the outer periphery of the polishing pad, and including a straight groove; wherein each of the straight grooves formed in the second zone and the fourth zone is formed in multiple numbers, and a straight line passing through the point closest to the center point of the polishing pad among the straight grooves and the center point of the polishing pad forms an angle of 10 to 67.5 degrees, and in the second zone, it is formed at an angle in a clockwise direction, and in the fourth zone, it is formed at an angle in a counterclockwise direction. Hereinafter, a polishing pad including a groove of the second type will be described in detail with reference to FIG. 8.

[0121]

[0122] As illustrated in FIG. 8, the first zone (10) is a portion where the slurry is supplied and may be located around the center point of the polishing pad (100). If a straight groove (60') is formed in the first zone (10), the slurry will quickly escape out of the first zone (10) along the straight groove (60') before it spreads evenly in the first zone (10). To prevent this, a straight groove (60') may not be formed in the first zone (10). This allows the slurry to spread out to the second zone (20) outside the first zone (10) while it is spread evenly in the first zone (10), thereby supplying the slurry more evenly to the polishing pad (100) and improving the polishing speed of the polishing pad (100).

[0123] As shown in FIG. 8, the third zone (30) may not have concentric grooves (50) and straight grooves (60') formed therein. This allows the third zone (30) to spread the slurry uniformly once again when the slurry has moved unevenly through the second zone (20).

[0124] As shown in FIG. 8, the second zone (20) may have a straight groove (60') formed therein. The straight groove (60') may allow the slurry, which is uniformly spread in the first zone (10), to move smoothly to the third zone (30).

[0125] At this time, the straight groove (60') formed in the second zone (20) may be formed at an angle of 10 to 67.5 degrees between the point closest to the center point of the polishing pad among the straight grooves (60') and the straight line passing through the center point of the polishing pad, and may be formed at an angle in a clockwise direction. Through this, when the plate to which the polishing pad (100) is attached rotates in a counterclockwise direction, the straight groove (60') formed in the second zone (20) is formed in a clockwise direction, allowing the slurry to move more smoothly to the third zone (30). If the plate rotates in a clockwise direction, the straight groove (60') may also be formed in a clockwise direction.

[0126] As shown in FIG. 8, the fourth zone (40) may have a straight groove (60') formed therein. The straight groove (60') allows the slurry used to polish the surface of the wafer in the third zone (30) to move smoothly to the outer periphery of the polishing pad (100). Additionally, the straight groove (60') increases the amount of slurry newly introduced into the third zone (30) along the second zone (20), thereby allowing the wafer to be effectively polished by the polishing pad (100). Through this, the fourth zone (40) can improve the polishing speed of the polishing pad (100) by controlling the behavior of the slurry. Furthermore, the fourth zone (40) can quickly and smoothly discharge impurities generated when polishing the wafer to the outer periphery of the polishing pad (100).

[0127] At this time, the straight groove (60') formed in the fourth zone (40) may be formed at an angle of 10 to 67.5 degrees between the point closest to the center point of the polishing pad among the straight grooves (60') and the straight line passing through the center point of the polishing pad, and may be formed at an angle in a counterclockwise direction. Through this, when the plate to which the polishing pad (100) is attached rotates in a counterclockwise direction, the straight groove (60') formed in the fourth zone (40) is formed in a counterclockwise direction, so that the slurry coming out of the third zone (30) is collected well, allowing polishing to proceed effectively. If the plate rotates in a clockwise direction, the straight groove (60') formed in the fourth zone (40) may be formed in a clockwise direction, and the straight groove (60') formed in the second zone (20) may be formed in a counterclockwise direction.

[0128] According to one embodiment of the present invention, the radius of the first zone (10), the width of the second zone (20), the width of the third zone (30), and the width of the fourth zone (40) are in a ratio of 1 to 1.5 : 1 to 1.5 : 1 to 1.5 : 1 to 1.5 : 1 to 1.5. Specifically, the ratio may be 1 to 1.5 : 1 to 1.5 : 1 to 1.5 : 1 to 1.2 : 1 to 1.2 : 1 to 1.2. If the width (band width) of the third zone (30) exceeds the above-described range, the width of the second zone (20) decreases, thereby reducing the slurry inflow, and if it is below the above-described range, the contact area between the polishing pad (100) and the wafer decreases, which may cause a problem of reduced polishing efficiency. Therefore, by adjusting the above ratio to the range described above, the wafer can be polished uniformly and the polishing speed of the polishing pad (100) can be improved.

[0129] According to one embodiment of the present invention, the straight groove (60') has a depth of 0.5 mm to 1.0 mm and a width of 0.3 mm to 1.0 mm. At this time, the shape of the vertical cross-section of the straight groove (60') may be a semicircle, an ellipse, or a truncated polygon, but is not limited thereto. The width may be measured based on the widest part.

[0130] According to one embodiment of the present invention, the straight groove (60') formed in the second zone (20) and the fourth zone (40) is formed such that the straight line passing through the point closest to the center point of the polishing pad among the straight grooves (60') and the center point of the polishing pad forms an angle of 10 to 67.5 degrees. Specifically, the angle may be 10 to 67.5 degrees or 15 to 65 degrees. By adjusting the angle to the above-described range, the polishing speed of the polishing pad (100) can be maintained.

[0131] According to one embodiment of the present invention, the straight grooves (60') formed in the second zone (20) and the fourth zone (40) are formed at uniform intervals. However, the straight grooves (60') may be formed at different intervals, not limited thereto.

[0132] According to one embodiment of the present invention, four to sixteen straight grooves (60') may be formed in the second zone (20) and the fourth zone (40).

[0133]

[0134] According to one embodiment of the present invention, a concentric groove is further formed in at least one of the second and fourth zones. Hereinafter, the polishing pad will be described in detail with reference to FIG. 9.

[0135]

[0136] As illustrated in FIG. 9, the polishing pad (100) has straight grooves (60') formed in the second zone (20) and the fourth zone (40), and concentric grooves (50) may be further formed in the second zone (20) and the fourth zone (40). The polishing pad (100) has straight grooves (60') formed in the second zone (20) and the fourth zone (40), and concentric grooves (50) may be further formed in the second zone (20). The polishing pad (100) has straight grooves (60') formed in the second zone (20) and the fourth zone (40), and concentric grooves (50) may be further formed in the fourth zone (40). Through this, the polishing pad (100) can improve the polishing speed of the polishing pad (100) by controlling the behavior of the slurry.

[0137]

[0138] According to one embodiment of the present invention, a concentric groove is further formed in at least one of the first and third zones. Hereinafter, the polishing pad will be described in detail with reference to FIG. 10.

[0139]

[0140] As illustrated in FIG. 10, the polishing pad (100) has straight grooves (60') formed in the second zone (20) and the fourth zone (40), and concentric grooves (50) may be further formed in the first zone (10) and the third zone (30). The polishing pad (100) has straight grooves (60') formed in the second zone (20) and the fourth zone (40), and concentric grooves (50) may be further formed in the first zone (10). The polishing pad (100) has straight grooves (60') formed in the second zone (20) and the fourth zone (40), and concentric grooves (50) may be further formed in the third zone (30). Through this, the polishing pad (100) can improve the polishing speed of the polishing pad (100) by controlling the behavior of the slurry.

[0141]

[0142] According to one embodiment of the present invention, concentric grooves are further formed in the first to fourth zones. Hereinafter, a polishing pad including a second type of groove will be described in detail with reference to FIGS. 11 and 12.

[0143]

[0144] As illustrated in FIG. 11, the first zone (10) is a portion where the slurry is supplied and may be located around the center point of the polishing pad (100). If a straight groove (60') is formed in the first zone (10), the slurry will quickly escape out of the first zone (10) along the straight groove (60') before it spreads evenly in the first zone (10). To prevent this, the straight groove (60') may not be formed in the first zone (10), and only a concentric groove (50) may be formed. Through this, the slurry can spread out to the second zone (20) outside the first zone (10) while spreading evenly in the first zone (10), so that the slurry is supplied more evenly to the polishing pad (100) and the polishing speed of the polishing pad (100) can be improved.

[0145] As shown in FIG. 11, the third zone (30) may only have concentric grooves (50) formed therein. Through this, the third zone (30) prevents the slurry that has passed through the second zone (20) from rapidly flowing out toward the outer periphery of the polishing pad (100), and maintains the slurry in the part of the polishing pad (100) that is in frequent contact with the wafer, thereby improving the polishing speed of the polishing pad (100). Additionally, the third zone (30) can cause the slurry to spread uniformly once again if it has moved unevenly through the second zone (20).

[0146] As shown in FIG. 11, the second zone (20) may be formed with concentric grooves (50) and straight grooves (60') formed intersecting therewith. The straight grooves (60') can allow the slurry, which is uniformly spread in the first zone (10), to move smoothly to the third zone (30). Additionally, the concentric grooves (50) can maintain the slurry and allow the wafer to be effectively polished by the polishing pad (100). Through this, the second zone (20) can control the behavior of the slurry to improve the polishing speed of the polishing pad (100).

[0147] At this time, the straight groove (60') formed in the second zone (20) may be formed at an angle of 10 to 67.5 degrees between the point closest to the center point of the polishing pad among the straight grooves (60') and the straight line passing through the center point of the polishing pad, and may be formed at an angle in a clockwise direction. Through this, when the plate to which the polishing pad (100) is attached rotates in a counterclockwise direction, the straight groove (60') formed in the second zone (20) is formed in a clockwise direction, allowing the slurry to move more smoothly to the third zone (30). If the plate rotates in a clockwise direction, the straight groove (60') may also be formed in a clockwise direction.

[0148] As illustrated in FIG. 11, the fourth zone (40) may be formed with concentric grooves (50) and straight grooves (60') formed intersecting therewith. The straight grooves (60') can allow the slurry used to polish the surface of the wafer in the third zone (30) to move smoothly to the outer periphery of the polishing pad (100). Additionally, the straight grooves (60') increase the amount of slurry newly introduced into the third zone (30) along the second zone (20), thereby allowing the wafer to be effectively polished by the polishing pad (100). Through this, the fourth zone (40) can improve the polishing speed of the polishing pad (100) by controlling the behavior of the slurry. Furthermore, the fourth zone (40) can quickly and smoothly discharge impurities generated when polishing the wafer to the outer periphery of the polishing pad (100).

[0149] At this time, the straight groove (60') formed in the fourth zone (40) may be formed at an angle of 10 to 67.5 degrees between the point closest to the center point of the polishing pad among the straight grooves (60') and the straight line passing through the center point of the polishing pad, and may be formed at an angle in a counterclockwise direction. Through this, when the plate to which the polishing pad (100) is attached rotates in a counterclockwise direction, the straight groove (60') formed in the fourth zone (40) is formed in a counterclockwise direction, so that the slurry coming out of the third zone (30) is collected well, allowing polishing to proceed effectively. If the plate rotates in a clockwise direction, the straight groove (60') formed in the fourth zone (40) may be formed in a clockwise direction, and the straight groove (60') formed in the second zone (20) may be formed in a counterclockwise direction.

[0150] According to one embodiment of the present invention, the radius of the first zone (10), the width of the second zone (20), the width of the third zone (30), and the width of the fourth zone (40) are in a ratio of 1 to 1.5 : 1 to 1.5 : 1 to 1.5 : 1 to 1.5 : 1 to 1.5. Specifically, the ratio may be 1 to 1.5 : 1 to 1.5 : 1 to 1.5 : 1 to 1.2 : 1 to 1.2 : 1 to 1.2. If the width (band width) of the third zone (30) exceeds the above-described range, the width of the second zone (20) decreases, thereby reducing the slurry inflow, and if it is below the above-described range, the contact area between the polishing pad (100) and the wafer decreases, which may cause a problem of reduced polishing efficiency. Therefore, by adjusting the above ratio to the range described above, the wafer can be polished uniformly and the polishing speed of the polishing pad (100) can be improved.

[0151] According to one embodiment of the present invention, the first zone (10) has a groove-non-forming portion (70) located in the center. The groove-non-forming portion (70) may be formed on a circular surface having a radius of 0.05 to 0.15 times the radius of the polishing pad (100), but is not limited thereto.

[0152] According to one embodiment of the present invention, the concentric groove (50) is formed such that a plurality of circular grooves with different radii are spaced apart from each other with respect to the center point of the polishing pad (100). At this time, the concentric groove (50) can be formed at uniform intervals on the front surface of the polishing pad (100).

[0153] According to one embodiment of the present invention, the concentric groove (50) has a depth of 0.5 mm to 1.0 mm and a width of 0.3 mm to 1.0 mm. At this time, the vertical cross-sectional shape of the concentric groove (50) may be a semicircle, an ellipse, or a truncated polygon, but is not limited thereto. The width may be measured based on the widest part.

[0154] According to one embodiment of the present invention, the concentric groove (50) has a separation distance of 0.5 mm to 4.0 mm from adjacent concentric grooves (50). Specifically, the separation distance may be 0.5 mm to 4.0 mm or 1.0 mm to 3.0 mm.

[0155] According to one embodiment of the present invention, 20 to 70 concentric grooves (50) may be formed in each of the first zone (10), the second zone (20), the third zone (30), and the fourth zone (40). At this time, the number of radial grooves (60) formed in the second zone (20) and the fourth zone (40) may be the same, but is not limited thereto and may be formed in different numbers.

[0156] According to one embodiment of the present invention, a straight groove (60') formed in the fourth zone (40) may be formed between the straight grooves (60') formed in the second zone (20) based on the intersection point of the concentric groove (50) closest to the center point of the polishing pad (100) among the intersecting concentric grooves (50).

[0157]

[0158] Method for manufacturing abrasive pads

[0159]

[0160] According to one embodiment of the present invention, a method for manufacturing a polishing pad first comprises the step of synthesizing a polyurethane prepolymer (1).

[0161] According to one embodiment of the present invention, the weight-average molecular weight of the polyurethane prepolymer is 500 g / mol to 3,000 g / mol. Specifically, the weight-average molecular weight of the polyurethane prepolymer may be 500 g / mol or more, 600 g / mol or more, 700 g / mol or more, 800 g / mol or more, 900 g / mol or more, 1,000 g / mol or more, 3,000 g / mol or less, 2,500 g / mol or less, 2,000 g / mol or less, 1,500 g / mol or less, 500 g / mol to 3,000 g / mol, 800 g / mol to 2,500 g / mol, 1,000 g / mol to 2,000 g / mol. By controlling the weight-average molecular weight of the above-mentioned polyurethane prepolymer to the range described above, the heat resistance of the polishing pad can be improved, thereby reducing the difference in elongation of the polishing pad between low and high temperatures.

[0162] According to one embodiment of the present invention, the polyurethane prepolymer is prepared by a polymerization reaction of a composition comprising one or more isocyanate compounds selected from the group consisting of toluene diisocyanate, 4,4'-diphenylmethane diisocyanate, naphthalene-1,5-diisocyanate, toluidine diisocyanate, paraphenylene diisocyanate, xylene diisocyanate, isophorone diisocyanate, hexamethylene diisocyanate, 4,4'-dicyclohexylmethane diisocyanate, and cyclohexane diisocyanate; and one or more polyol compounds selected from the group consisting of polyether polyol, polycarbonate polyol, polyester polyol, and polycaprolactone polyol. Specifically, the isocyanate compound may more preferably be selected from toluene diisocyanate (TDI), 4,4'-diphenyl methane diisocyanate, 4,4'-dicyclohexylmethane diisocyanate, etc., and the polyol compound may more preferably be selected from polycaprolactone polyol, polytetramethylene ether glycol (PTMEG), polypropylene ether glycol (PPG), polyethylene ether glycol (PEG), etc. However, the isocyanate compound and the polyol compound are not limited to the compounds described above, and materials known in the art may be used without limitation.

[0163] According to one embodiment of the present invention, the polyurethane prepolymer further comprises one or more chain extenders selected from the group consisting of ethylene glycol, 1,2-propylene glycol, 1,3-propylene glycol, 1,2-butanediol, 1,3-butanediol, 2-methyl-1,3-propanediol, 1,4-butanediol, neopentyl glycol, 1,5-pentanediol, 3-methyl-1,5-pentanediol, 1,6-hexanediol, diethylene glycol, dipropylene glycol, and tripropylene glycol. Specifically, the chain extender may be included in an amount of 0% to 10% by weight based on the total weight of the polyurethane prepolymer. In this case, 0% by weight refers to the case where no chain extender is included.

[0164] According to one embodiment of the present invention, the polyurethane prepolymer further comprises a silicone-based surfactant. In this case, a nonionic surfactant or an ionic surfactant may be used as the silicone-based surfactant. Specifically, a silicone-based surfactant of the same type as a copolymer comprising at least one block comprising at least one polydimethylsiloxane and at least one other block comprising a polyether, polyester, polyamide, or polycarbonate segment may be used. Additionally, specifically, the silicone-based surfactant may be included in an amount of 0% to 2% by weight based on the total weight of the polyurethane prepolymer. In this case, 0% by weight refers to the case where the silicone-based surfactant is not included. By including the silicone-based surfactant in the polyurethane prepolymer, the phenomenon of pore overlapping can be prevented.

[0165]

[0166] Next, (2) the polyurethane prepolymer, the curing agent, and the pore-forming agent are mixed to form a mixture. In step (2), the polyurethane prepolymer, the curing agent, and the pore-forming agent may be simultaneously introduced into a mixing head chamber made of a metal material such as aluminum or SUS during the mixing process. The mixing head chamber can simultaneously mix the polyurethane prepolymer, the curing agent, and the pore-forming agent through stirring. The stirring may be performed at a stirring speed of 3,000 ppm to 6,000 ppm. By adjusting the stirring speed to the range described above, the pore-forming agent can be evenly dispersed within the mixture to efficiently form pores.

[0167] According to one embodiment of the present invention, the curing agent comprises 4,4'-methylene-bis-(2-chloroaniline) (MBOCA); diethyltoluenediamine (DETDA); 3,5-dimethylthio-2,4-toluenediamine and isomers thereof; 3,5-diethyltoluene-2,4-diamine and isomers thereof; 4,4'-bis-(sec-butylamino)-diphenylmethane; 1,4-bis-(sec-butylamino)-benzene; 4,4'-methylene-bis-(2-chloroaniline); 4,4'-methylene-bis-(3-chloro-2,6-diethylaniline) (MCDEA); polytetramethylene oxide-di-p-aminobenzoate; N,N'-dialkyldiaminodiphenylmethane; p,p'-methylene dianiline (MDA); It is one or more selected from the group consisting of m-phenylenediamine (MPDA); 4,4'-methylene-bis-(2,6-diethylaniline) (MDEA); 4,4'-methylene-bis-(2,3-dichloroaniline) (MDCA); 4,4'-diamino-3,3'-diethyl-5,5'-dimethyl diphenylmethane; 2,2',3,3'-tetrachlorodiaminodiphenylmethane; and trimethylene glycol di-p-aminobenzoate.

[0168] According to one embodiment of the present invention, the mass ratio of the polyurethane prepolymer to the curing agent is 70:30 to 90:10. Specifically, the mass ratio of the polyurethane prepolymer to the curing agent may be 70:30 to 90:10, 75:25 to 90:10, or 80:20 to 90:10. By adjusting the mass ratio to the above-described range, it is possible to prevent the polishing pad from becoming brittle at high temperatures due to the curing agent that did not react with the polyurethane prepolymer.

[0169] According to one embodiment of the present invention, the pore-forming agent comprises one or more selected from the group consisting of volatile liquid foaming agents, inert gases, and solid foaming agents.

[0170] According to one embodiment of the present invention, the volatile liquid blowing agent may be used as one or more hydrocarbon compounds selected from the group consisting of methyl cellosolve, ethyl cellosolve, cyclohexanone, etc., and as perfluoro compounds, it includes one or more selected from the group consisting of bis(nonafluorobutyl)(trifluoromethyl)amine, perfluorotributylamine, perfluoro-N-methylmorpholine, perfluorotripentylamine, and perfluorohexane, etc. Commercially available perfluoro compounds such as PF-5056 (3M), PF-5058 (3M), FC-40 (3M), FC-43 (3M), FC-72 (3M), FC-84 (3M), FC-770 (3M), FC-3283 (3M), FC-3284 (3M), Novec 7100 (3M), Novec 7200 (3M), Novec 7300 (3M), Novec 7500 (3M), Novec 7600 (3M), HT-50 (Solvay), HT-70 (Solvay), HT-80 (Solvay), HT-110 (Solvay), HT-135 (Solvay), HT-170, etc., may be used. Since the above volatile liquid blowing agent has a boiling point of 150°C to 170°C, it does not participate in chemical reactions within the mixture and can generate a large amount of bubbles by vaporization due to the heat of urethane reaction in the presence of a certain amount of inert gas.

[0171] According to one embodiment of the present invention, the volatile liquid blowing agent is mixed in an amount of 0.1 to 2.0 parts by weight based on 100 parts by weight of the total of the polyurethane prepolymer and the curing agent.

[0172] According to one embodiment of the present invention, the inert gas comprises one or more selected from the group consisting of He, Ne, Ar, Kr, Xe, Rn, and N2. The inert gas does not participate in the urethane reaction and can increase the dispersion efficiency of the volatile liquid foaming agent when stirred in a closed mixing head.

[0173] According to one embodiment of the present invention, the inert gas is mixed in an amount of 40 parts by volume or less based on a total of 100 parts by volume of the polyurethane prepolymer and the curing agent.

[0174] According to one embodiment of the present invention, the solid foaming agent comprises one or more selected from the group consisting of vinylidene chloride copolymers, acrylonitrile copolymers, methacrylonitrile copolymers, and acrylic copolymers.

[0175]

[0176] Next, (3) the above mixture is injected into a mold and molded to form a molded product. Specifically, a mixture comprising a polyurethane prepolymer, a curing agent, and a pore-forming agent, which is sufficiently stirred in a mixing head chamber, etc., can be injected into a mold and solidified through a gelation reaction and a curing reaction. At this time, the gelation reaction may be carried out at 80°C to 120°C for 20 to 60 minutes, and the curing reaction may be carried out at 80°C to 120°C for 12 to 20 hours, but is not limited thereto.

[0177]

[0178] Next, (4) the above molded product is processed to manufacture a polishing pad. The processing may include demolding, cutting, surface treatment, grooving, etc. The processing may be carried out according to conventional methods known in the art.

[0179]

[0180] Next, (5) the temperature elongation variation ratio (ROTEC) value, represented by the following mathematical formula 1, is calculated from the upper pad layer of the polishing pad.

[0181] [Mathematical Formula 1]

[0182]

[0183] A is the elongation of the upper pad layer measured by tensile at a speed of 300 mm / min at 25℃, and B is the elongation of the upper pad layer measured by tensile at a speed of 300 mm / min at 100℃.

[0184] Specifically, to derive the above value A, a dogbone specimen manufactured in accordance with ASTM D638 standards using the upper pad layer of a sheet-type abrasive pad is prepared, and the elongation is analyzed through a tensile test using a universal testing machine (UTM, Shimadzu AGS-X) at a temperature of 25°C. At this time, the tensile test conditions of the universal testing machine may be conducted at a speed of 300 mm / min. Additionally, specifically, to derive the above value B, the elongation is analyzed in the same manner as when deriving value A, except that the dogbone specimen is heated at a temperature of 100°C for 1 hour and then the elongation is analyzed through a tensile test using a universal testing machine while maintaining the temperature.

[0185]

[0186] Finally, (6) if the above temperature elongation variation ratio (ROTEC) value satisfies 50% to 200%, it is selected as a compliant product, and if it does not satisfy the above range, one or more conditions of steps (1) to (4) are changed and steps (1) to (4) are performed again to obtain a compliant product that satisfies the temperature elongation variation ratio (ROTEC) value 50% to 200%. Specifically, the above temperature elongation variation ratio (ROTEC) value may be 50% or more, 60% or more, 70% or more, 80% or more, 90% or more, 200% or less, 190% or less, 180% or less, 170% or less, 160% or less, 50% to 200%, 70% to 180%, and 90% to 160%. By selecting a product that satisfies the above-described range of the temperature elongation variation ratio (ROTEC) value as an acceptable product, it is possible to manufacture a polishing pad capable of reducing wafer defects by reducing the size of impurities.

[0187]

[0188] Abrasive Pad Evaluation Method

[0189]

[0190] In the case of conventional polishing pad evaluation methods, in order to identify wafer defects, it is required to attach a polishing pad to a polishing device, perform polishing on an actual target (e.g., wafer), and measure wafer defects after a cleaning process. However, directly carrying out these processes consumes a significant amount of manpower, cost, and time.

[0191] To resolve these problems, the present invention provides a polishing pad evaluation method capable of estimating debris size and consequent wafer defects without performing an actual polishing process. Through this, since acceptable and unacceptable polishing pads can be reliably distinguished without performing additional polishing processes, the manpower, cost, and time required for the polishing process can be reduced. Furthermore, by sampling some of the polishing pads from the acceptable products and performing a polishing process, the polishing performance of the polishing pads can be estimated more reliably. Below, a polishing pad evaluation method according to one embodiment of the present invention will be described in detail.

[0192]

[0193] According to one embodiment of the present invention, as a method for evaluating the polishing performance of a polishing pad, if the temperature elongation variation ratio (ROTEC) value represented by the following mathematical formula 1 from the upper pad layer of the polishing pad is 50% to 200%, it is determined to be a product with acceptable polishing performance.

[0194] [Mathematical Formula 1]

[0195]

[0196] A is the elongation of the upper pad layer measured by stretching at a speed of 300 mm / min at 25℃, and B is the elongation of the upper pad layer measured by stretching at a speed of 300 mm / min at 100℃. Specifically, the above-mentioned temperature elongation variation ratio (ROTEC) value is 50% or more, 60% or more, 70% or more, 80% or more, 90% or more, 200% or less, 190% or less, 180% or less, 170% or less, 160% or less, and may be 50% to 200%, 70% to 180%, or 90% to 160%. By determining that a product is acceptable when the above-mentioned temperature elongation variation ratio (ROTEC) value satisfies the above-mentioned range, a polishing pad capable of reducing wafer defects by reducing the size of impurities can be determined.

[0197] According to one embodiment of the present invention, when the upper pad layer of the polishing pad is polished by contacting the polishing pad with a disk, the median size of the impurities generated is 10㎛ to 40㎛, and the product is determined to be a product that passes the polishing performance test. The impurities refer to byproducts such as metal oxides containing metallic substances and slurry residues that are generated when the upper pad layer of the polishing pad is worn by a wafer or disk, etc., during a CMP process or a conditioning process. The impurities may refer to debris of the polishing pad, abrasive particles, and charged particles including ions and electrons. Specifically, the median size of the impurities may be 10㎛ or more, 15㎛ or more, 20㎛ or more, 25㎛ or more, 30㎛ or more, 40㎛ or less, 39㎛ or less, 38㎛ or less, 37㎛ or less, 36㎛ or less, 10㎛ to 40㎛, 20㎛ to 39㎛, and 30㎛ to 38㎛. By determining that a product is acceptable when the median size of the above-mentioned impurities satisfies the aforementioned range, defects in the wafer can be reduced in the CMP process.

[0198] According to one embodiment of the present invention, if the number of defects in a wafer polished using the polishing pad is 200 or less, it is determined to be a product that passes the polishing performance test. Specifically, the number of defects in the wafer may be 200 or less, 190 or less, 180 or less, 170 or less, 160 or less, 150 or less, 140 or less, 130 or less, 120 or less, 110 or less, or 100 or less. The lower limit of the number of defects in the wafer may be, for example, 1 or more. By determining that a wafer satisfying the above-described range is a product that passes the test, defects in the wafer can be reduced in the CMP process.

[0199]

[0200] Specific embodiments of the present invention are presented below. However, the embodiments described below are merely for the purpose of specifically illustrating or explaining the present invention and do not limit the present invention. Furthermore, details not described herein can be sufficiently technically inferred by a person skilled in the art, so their description is omitted.

[0201]

[0202] Examples

[0203]

[0204] Example 1

[0205] In a casting device equipped with a prepolymer, a curing agent, a volatile liquid foaming agent, and an inert gas insertion line, a polyurethane prepolymer (KPX, PT421289, weight-average molecular weight: 1,000 g / mol, NCO%: 8.9, viscosity: 25,000 cps at 25℃) is injected into the prepolymer tank, 4,4'-methylene-bis-(2-chloroaniline) (Wakayama) is injected into the curing agent tank as a curing agent, a volatile liquid foaming agent is injected into the foaming agent tank as a pore-forming agent, and nitrogen (purity 99.9999%) is injected as an inert gas by installing a cylinder without a separate raw material tank. At this time, the weight ratio of the polyurethane prepolymer to the curing agent is 82:18. Based on a total weight (or volume) of 100 parts by weight (or volume) of the above polyurethane prepolymer and curing agent, 0.5 parts by weight of a volatile liquid foaming agent and 8 parts by volume of an inert gas are injected while stirring at 4500 rpm and discharged at a speed of 16 kg / min to form a mixture.

[0206] The above mixture is poured into a mold (width 900mm, length 850mm, thickness 16mm, inclination angle 60 degrees) at 100℃, cured, and then demolded, and then post-cured in a 100℃ oven for 16 hours to produce a cake-shaped molded product.

[0207] The above molded product is cut to obtain a polishing layer sheet of a polishing pad with a thickness of 2.2 mm. The surface of the polishing layer sheet is flattened to a thickness of 2.0 mm using a flattener to produce an upper pad layer. Next, a groove pattern is processed on the upper pad layer using a processing tip. Subsequently, a heat-sealable film is heat-sealed at 140°C as a lower pad layer (non-woven fabric, thickness 1.2 mm) to the upper pad layer with the groove pattern processed on the surface facing the wafer, and the polishing pad is manufactured by cutting with a 762 mm circular press.

[0208]

[0209] Example 2

[0210] A polishing pad is manufactured in the same manner as in Example 1, except that the weight ratio of the polyurethane prepolymer and the curing agent is 80:20.

[0211]

[0212] Example 3

[0213] A polishing pad is manufactured in the same manner as in Example 1, except that the weight ratio of the above polyurethane prepolymer and curing agent is 80:20 and the mold temperature is 120℃.

[0214]

[0215] Example 4

[0216] A polishing pad is manufactured in the same manner as in Example 1, except that the above-mentioned polyurethane prepolymer is KPX PT408247, weight-average molecular weight: 800 g / mol, NCO%: 8.9, viscosity: 18,000 cps at 25℃, and the weight ratio of the polyurethane prepolymer to the curing agent is 82:18.

[0217]

[0218] Comparative Example 1

[0219] A polishing pad is manufactured in the same manner as in Example 1, except that the weight ratio of the polyurethane prepolymer and the curing agent is 75:25.

[0220]

[0221] Comparative Example 2

[0222] A polishing pad is manufactured in the same manner as in Example 4, except that the weight ratio of the polyurethane prepolymer and the curing agent is 80:20.

[0223]

[0224] Experimental Example (Abrasive Pad Evaluation Method)

[0225]

[0226] Experimental Example 1 (Evaluation of Elongation)

[0227] The elongation of the polishing pads prepared according to Examples 1 to 4 and Comparative Examples 1 and 2 at 25°C and 100°C was measured, and the results are shown in Table 1 below. The elongation was measured by preparing a dogbone specimen for the upper pad layer of the polishing pad according to ASTM D638 and performing a tensile test at 25°C and 100°C at a speed of 300 mm / min using a universal testing machine (UTM, Shimadzu Corporation, AGS-X). In Table 1 below, the temperature elongation variation ratio (ROTEC) is calculated by the following Equation 1.

[0228] [Mathematical Formula 1]

[0229]

[0230] A is the elongation of the upper pad layer measured by tensile at a speed of 300 mm / min at 25℃, and B is the elongation of the upper pad layer measured by tensile at a speed of 300 mm / min at 100℃.

[0231]

[0232] Example 1 Example 2 Example 3 Example 4 Comparative Example 1 Comparative Example 2 A 2 10 1 37 1 15 14 3 16 5 12 8 B 10 6 14 4 16 9 28 5 5 0 3 0 2 Temperature Stretch Variation Ratio (ROTEC) (%) 5 0 10 5 14 7 19 9 30 2 36

[0233]

[0234] Referring to Table 1 above, it can be seen that Examples 1 to 4 have a temperature elongation variation ratio (ROTEC) of 50% to 150%. Through this, it can be seen that when the mass ratio of the polyurethane prepolymer to the curing agent and the weight-average molecular weight of the polyurethane prepolymer are controlled, the change in elongation with increasing temperature is small.

[0235]

[0236] Experimental Example 2 (Impurity Evaluation)

[0237] The median size of impurities generated when polishing the surface of a polishing pad by contacting the polishing pads prepared according to Examples 1 to 4 and Comparative Examples 1 and 2 with a disc was measured, and the results are shown in Table 2 below. The median size of the impurities was measured using a particle size analyzer (Beckman).

[0238]

[0239] Example 1 Example 2 Example 3 Example 4 Comparative Example 1 Comparative Example 2 Impurity Median Size (㎛) 3 1 3 0 3 2 3 5 4 2 4 4

[0240]

[0241] Referring to Table 2 above, it can be seen that the median size of impurities in Examples 1 to 4 is smaller than that of Comparative Examples 1 and 2, satisfying the range of 30㎛ to 40㎛.

[0242]

[0243] Experimental Example 3 (Wafer Evaluation)

[0244] The number of defects on a wafer polished using polishing pads prepared according to Examples 1 to 4 and Comparative Examples 1 and 2 was measured, and the results are shown in Table 3 below. The number of defects on the wafer was measured using an analysis device (KLA, Surfscan (SP2)) after the wafer, immediately after passing through the CMP process, was cleaned using a brush that rotates while supplying a cleaning solution and ultrapure water, and the wafer surface was completely dried through Spin dry and N2 blow.

[0245]

[0246] Example 1 Example 2 Example 3 Example 4 Comparative Example 1 Comparative Example 2 Number of wafer defects (pieces) 142134141144164176

[0247]

[0248] Referring to Table 3 above, it can be seen that the number of wafer defects in Examples 1 to 4 is smaller than that in Comparative Examples 1 and 2, satisfying the range of 100 to 150. Through this, it can be seen that when polishing a wafer using the polishing pads of Examples 1 to 4, which satisfy a temperature elongation variation ratio (ROTEC) value of 50% to 150% and have a median impurity size of 30㎛ to 40㎛, the number of wafer defects is reduced.

[0249]

[0250] [Explanation of the symbol]

[0251] 10: Zone 1

[0252] 20: Zone 2

[0253] 30: Zone 3

[0254] 40: Zone 4

[0255] 50: Concentric grooves

[0256] 60: Radial straight groove

[0257] 60': Straight groove

[0258] 70: Groove non-forming part

[0259] 100: Polishing pad

[0260] 110: Upper pad layer

[0261] 120: Lower pad layer

Claims

An upper pad layer facing the wafer; and It includes a lower pad layer that supports the upper pad layer, and The upper pad layer has a temperature elongation variation ratio (ROTEC) value of 50% to 200%, represented by the following mathematical formula 1, and Abrasive pad comprising a polyurethane prepolymer, a curing agent, and a pore-forming agent: [Mathematical Formula 1] A is the elongation of the upper pad layer measured by tensile at a speed of 300 mm / min at 25℃, and B is the elongation of the upper pad layer measured by tensile at a speed of 300 mm / min at 100℃. In claim 1, The upper pad layer where the above polishing pad faces the wafer (A) A first zone formed on a circular area having a radius corresponding to 1 / 10 to 4 / 10 of the polishing pad radius from the center point of the polishing pad; (B) A second zone formed in a circular area having a radius corresponding to 3 / 10 to 7 / 10 of the polishing pad radius from the center point of the polishing pad, excluding the first zone, and including a radial straight groove; (C) A third zone formed in a portion excluding the first and second zones in a circular area having a radius corresponding to 6 / 10 to 9 / 10 of the polishing pad radius from the center point of the polishing pad; and (D) A fourth zone formed between the outer periphery of the third zone and the outer periphery of the polishing pad, and including a radial straight groove; A polishing pad in which the radial straight grooves formed in the second and fourth zones are formed to form an internal angle of 30 to 72 degrees with respect to the center point of the polishing pad and adjacent radial grooves. In claim 2, A polishing pad in which concentric grooves are further formed in at least one of the second and fourth zones. In claim 2, A polishing pad in which concentric grooves are further formed in at least one of the first and third zones. In claim 2, A polishing pad in which concentric grooves are further formed in the first to fourth zones. In claim 1, The upper pad layer where the above polishing pad faces the wafer (A) A first zone formed on a circular area having a radius corresponding to 1 / 10 to 4 / 10 of the polishing pad radius from the center point of the polishing pad; (B) A second zone formed in a circular area having a radius corresponding to 3 / 10 to 7 / 10 of the polishing pad radius from the center point of the polishing pad, excluding the first zone, and including a straight groove; (C) A third zone formed in a portion excluding the first and second zones in a circular area having a radius corresponding to 6 / 10 to 9 / 10 of the polishing pad radius from the center point of the polishing pad; and (D) A fourth zone formed between the outer periphery of the third zone and the outer periphery of the polishing pad, and including a straight groove; and A polishing pad in which a plurality of straight grooves are formed in each of the second and fourth zones, and a straight line passing through the point closest to the center point of the polishing pad among the straight grooves and the center point of the polishing pad forms an angle of 10 to 67.5 degrees, and is formed at an angle in a clockwise direction in the second zone and at an angle in a counterclockwise direction in the fourth zone. In claim 6, A polishing pad in which concentric grooves are further formed in at least one of the second and fourth zones. In claim 6, A polishing pad in which concentric grooves are further formed in at least one of the first and third zones. In claim 6, A polishing pad in which concentric grooves are further formed in the first to fourth zones. (1) A step of synthesizing a polyurethane prepolymer; (2) A step of forming a mixture by mixing a polyurethane prepolymer, a curing agent, and a pore-forming agent; (3) A step of injecting the above mixture into a mold and molding it to form a molded product; (4) A step of manufacturing a polishing pad by processing the above-mentioned molded product; (5) A step of calculating a temperature elongation variation ratio (ROTEC) value represented by the following mathematical formula 1 from the upper pad layer of the polishing pad; and (6) If the above temperature elongation variation ratio (ROTEC) value satisfies 50% to 200%, it is selected as an acceptable product; A method for manufacturing a polishing pad comprising: a step of, if the above range is not satisfied, changing one or more of the conditions of steps (1) to (4) and repeating steps (1) to (4) to obtain a passing product that satisfies a temperature elongation variation ratio (ROTEC) value of 50% to 200%; [Mathematical Formula 1] A is the elongation of the upper pad layer measured by tensile at a speed of 300 mm / min at 25℃, and B is the elongation of the upper pad layer measured by tensile at a speed of 300 mm / min at 100℃. In claim 10, A method for manufacturing an abrasive pad in which the weight-average molecular weight of the above-mentioned polyurethane prepolymer is 500 g / mol to 3,000 g / mol. In claim 10, The above polyurethane prepolymer is, One or more isocyanate compounds selected from the group consisting of toluene diisocyanate, 4,4'-diphenylmethane diisocyanate, naphthalene-1,5-diisocyanate, toluidine diisocyanate, paraphenylene diisocyanate, xylene diisocyanate, isophorone diisocyanate, hexamethylene diisocyanate, 4,4'-dicyclohexylmethane diisocyanate, and cyclohexane diisocyanate; and A method for manufacturing a polishing pad, produced by polymerization reaction of a composition comprising one or more polyol compounds selected from the group consisting of polyether polyols, polycarbonate polyols, polyester polyols, and polycaprolactone polyols. In claim 10, The above polyurethane prepolymer is, A method for manufacturing a polishing pad, further comprising one or more chain extenders selected from the group consisting of ethylene glycol, 1,2-propylene glycol, 1,3-propylene glycol, 1,2-butanediol, 1,3-butanediol, 2-methyl-1,3-propanediol, 1,4-butanediol, neopentyl glycol, 1,5-pentanediol, 3-methyl-1,5-pentanediol, 1,6-hexanediol, diethylene glycol, dipropylene glycol, and tripropylene glycol. In claim 10, A method for manufacturing a polishing pad, wherein the above-mentioned polyurethane prepolymer further comprises a silicone-based surfactant. In claim 10, The above curing agent is, 4,4'-Methylene-bis-(2-chloroaniline); diethyltoluenediamine; 3,5-dimethylthio-2,4-toluenediamine and isomers thereof; 3,5-diethyltoluene-2,4-diamine and isomers thereof; 4,4'-bis-(sec-butylamino)-diphenylmethane; 1,4-bis-(sec-butylamino)-benzene; 4,4'-Methylene-bis-(2-chloroaniline); 4,4'-Methylene-bis-(3-chloro-2,6-diethylaniline); polytetramethyleneoxide-di-p-aminobenzoate; N,N'-dialkyldiaminodiphenylmethane; p,p'-methylene dianiline; m-phenylenediamine; 4,4'-methylene-bis-(2,6-diethylaniline); A method for manufacturing a polishing pad, comprising one or more selected from the group consisting of 4,4'-methylene-bis-(2,3-dichloroaniline); 4,4'-diamino-3,3'-diethyl-5,5'-dimethyl diphenylmethane; 2,2',3,3'-tetrachlorodiaminodiphenylmethane; and trimethylene glycol di-p-aminobenzoate. In claim 10, A method for manufacturing a polishing pad, wherein the mass ratio of the polyurethane prepolymer to the curing agent is 70:30 to 90:

10. In claim 10, A method for manufacturing a polishing pad, wherein the pore-forming agent is one or more selected from the group consisting of volatile liquid foaming agents, inert gases, and solid foaming agents. In claim 17, The above volatile liquid foaming agent is, A method for manufacturing a polishing pad, comprising one or more selected from the group consisting of methyl cellosolve, ethyl cellosolve, cyclohexanone, bis(nonafluorobutyl)(trifluoromethyl)amine, perfluorotributylamine, perfluoro-N-methylmorpholine, perfluorotripentylamine, and perfluorohexane. In claim 17, A method for manufacturing a polishing pad, wherein the above-mentioned inert gas is one or more selected from the group consisting of He, Ne, Ar, Kr, Xe, Rn, and N2. In claim 17, A method for manufacturing a polishing pad, wherein the above-mentioned solid foaming agent is one or more selected from the group consisting of vinylidene chloride copolymers, acrylonitrile copolymers, methacrylonitrile copolymers, and acrylic copolymers. As a method for evaluating the polishing performance of a polishing pad, A polishing pad evaluation method that determines a product as acceptable for polishing performance when the temperature elongation variation ratio (ROTEC) value, represented by the following mathematical formula 1, from the upper pad layer of the above polishing pad is 50% to 200%: [Mathematical Formula 1] A is the elongation of the upper pad layer measured by tensile at a speed of 300 mm / min at 25℃, and B is the elongation of the upper pad layer measured by tensile at a speed of 300 mm / min at 100℃. In claim 21, A polishing pad evaluation method that determines a polishing pad as acceptable when the median size of impurities generated when the upper pad layer of the polishing pad is polished by contacting the polishing pad with a disc is 10㎛ to 40㎛.

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