Semiconductor equipment
The semiconductor device addresses connection masking and detection challenges by incorporating a through hole and protrusion in the conductive member design, enhancing reliability through improved connection visibility.
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- KK TOSHIBA
- Filing Date
- 2022-09-22
- Publication Date
- 2026-06-08
AI Technical Summary
Existing semiconductor devices face connection issues between conductive members and semiconductor chips, particularly with the fourth conductive member and the third electrode, which are masked by resin sealing and difficult to detect during pre-shipment inspections.
The semiconductor device incorporates a through hole in the third intermediate portion of the fourth conductive member and a protrusion on the third intermediate portion, allowing the molten resin to flow around these areas, reducing the masking of connection problems and facilitating detection.
This design enhances the reliability of the semiconductor device by minimizing the masking of connection issues and ensuring detectable integrity before shipment.
Smart Images
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Abstract
Description
Technical Field
[0001] Embodiments of the present invention relate to semiconductor devices.
Background Art
[0002] Semiconductor devices having semiconductor chips such as MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) are used in applications such as power conversion. For example, when the above semiconductor device is a vertical MOSFET, the source electrode and the gate electrode provided on the upper surface of the semiconductor chip are respectively connected to connectors provided on the semiconductor chip.
Prior Art Documents
Patent Documents
[0003]
Patent Document 1
Summary of the Invention
Problems to be Solved by the Invention
[0004] The problem to be solved by the present invention is to provide a highly reliable semiconductor device.
Means for Solving the Problems
[0005] The semiconductor device of the embodiment includes a semiconductor chip having a first surface, a second surface, a first electrode provided on the first surface, a second electrode provided on the second surface, and a third electrode provided on the second surface; a first conductive member including a first portion and a second portion, wherein the first portion is electrically connected to the first electrode, the direction from the first portion toward the semiconductor chip follows a first direction, and the direction from the second portion toward the first portion follows a second direction intersecting the first direction; a conductive first connecting member provided between the first conductive member and the first electrode; and a second conductive member including a third portion and a fourth portion, wherein the third The third conductive member comprises a second conductive member whose direction from the portion toward the fourth portion is along a third direction intersecting the first direction, a conductive second connecting member provided between the second electrode and the third portion, a third conductive member including a fifth portion, an intermediate portion and a sixth portion, wherein the direction from the fifth portion toward the sixth portion is along a fourth direction intersecting the first direction, the intermediate portion is provided between the fifth portion and the sixth portion in the fourth direction, the fifth portion is provided between the semiconductor chip and the intermediate portion in the first direction, and the intermediate portion has a through hole, and a conductive third connecting member provided between the third electrode and the fifth portion. The area of the third electrode in a plane perpendicular to the first direction is smaller than the area of the second electrode in a plane perpendicular to the first direction. . [Brief explanation of the drawing]
[0006] [Figure 1] This is a schematic diagram of a semiconductor device according to the first embodiment. [Figure 2] This is a schematic diagram of a semiconductor device according to the first embodiment. [Figure 3] This is a schematic top view showing the manufacturing process of a semiconductor device according to the first embodiment. [Figure 4] This is a schematic top view showing the manufacturing process of a semiconductor device according to the first embodiment. [Figure 5] This is a schematic cross-sectional view showing the manufacturing process of a semiconductor device that is a comparative example of the first embodiment. [Figure 6] This is a schematic cross-sectional view showing the manufacturing process of a semiconductor device according to the first embodiment. [Figure 7] This is a schematic diagram of a semiconductor device according to the second embodiment. [Figure 8] This is a schematic diagram of a semiconductor device according to the third embodiment. [Figure 9] This is a schematic cross-sectional view showing the manufacturing process of a semiconductor device according to the third embodiment. [Modes for carrying out the invention]
[0007] Embodiments of the present invention will be described below with reference to the drawings. In the following description, the same reference numerals will be used for identical components, and the description of components that have already been described will be omitted as appropriate.
[0008] In this specification, the upper direction in a drawing is referred to as "up" and the lower direction in a drawing as "down" to indicate the positional relationship of parts, etc. In this specification, the concepts of "up" and "down" do not necessarily refer to a relationship with the direction of gravity.
[0009] (First Embodiment) The semiconductor device of this embodiment comprises a semiconductor chip having a first surface, a second surface, a first electrode provided on the first surface, a second electrode provided on the second surface, and a third electrode provided on the second surface; a first conductive member including a first portion and a second portion, wherein the first portion is electrically connected to the first electrode, the direction from the first portion toward the semiconductor chip follows a first direction, and the direction from the second portion toward the first portion follows a second direction intersecting the first direction; a conductive first connecting member provided between the first conductive member and the first electrode; and a second conductive member including a third portion and a fourth portion. The present invention comprises a second conductive member whose direction from the third portion to the fourth portion is along a third direction intersecting the first direction, a conductive second connecting member provided between the second electrode and the third portion, a third conductive member including a fifth portion, an intermediate portion and a sixth portion, whose direction from the fifth portion to the sixth portion is along a fourth direction intersecting the first direction, the intermediate portion provided between the fifth portion and the sixth portion in the fourth direction, the fifth portion provided between the semiconductor chip and the intermediate portion in the first direction, and the intermediate portion having a through hole, and a conductive third connecting member provided between the third electrode and the fifth portion.
[0010] Figures 1 and 2 are schematic diagrams of the semiconductor device 100 of this embodiment. Figure 1(c) is a schematic perspective view of the semiconductor device 100 of this embodiment. Figure 1(b) is a schematic cross-sectional view taken along line A1-A2 in Figure 1(c). Figure 1(a) is an enlarged view of the schematic cross-sectional view taken along line A1-A2 in Figure 1(c). Figure 2 is an enlarged view of the schematic cross-sectional view taken along line B1-B2 in Figure 1(c).
[0011] The semiconductor device 100 includes a semiconductor chip 10, a first conductive member 21, a second conductive member 22, a third conductive member 23, a fourth conductive member 24, a fifth conductive member 25, a first connecting member 41, a second connecting member 42, a third connecting member 43, a fourth connecting member 44, a fifth connecting member 45, and a resin 30.
[0012] Note that the fifth part p5, the sixth part p6, and the third conductive member 23 are examples of the first part, the second part, and the first conductive member, respectively. The third connecting member 43 is an example of the first connecting member. The second part p2, the first part p1, and the first conductive member 21 are examples of the third part, the fourth part, and the second conductive member, respectively. The eighth part p8, the third intermediate part mp3, the seventh part p7, and the fourth conductive member 24 are examples of the fifth part, the intermediate part, the sixth part, and the third conductive member, respectively. The fifth connecting member 45 is an example of the third connecting member.
[0013] The semiconductor chip 10 is a chip in which a vertical MOSFET, an IGBT (Insulated Gate Bipolar Transistor), or the like is provided on a semiconductor substrate such as Si (silicon), SiC (silicon carbide), GaAs (gallium arsenide), or GaN (gallium nitride). The semiconductor chip 10 includes a first electrode 11 (for example, a drain electrode), a second electrode 12 (for example, a source electrode), and a semiconductor layer 10s. In this example, the semiconductor layer 10s is provided between the first electrode 11 and the second electrode 12. The semiconductor chip 10 also includes a third electrode 13 (for example, a gate electrode). For example, the semiconductor chip 10 includes a first surface (for example, a bottom surface) 10a and a second surface (for example, a top surface) 10b that faces the first surface 10a. The first electrode 11 is provided on the first surface 10a. The second electrode 12 and the third electrode 13 are provided on the second surface 10b.
[0014] As shown in FIGS. 1(a) and 1(b), the first conductive member 21 includes a first portion p1 and a second portion p2. In this example, the first conductive member 21 further includes a first intermediate portion mp1.
[0015] The second portion p2 is electrically connected to the semiconductor chip 10. In this example, the second portion p2 is electrically connected to the second electrode 12 (for example, a source electrode) (see FIG. 1(a)).
[0016] Here, an X direction (X-axis direction), a Y direction (Y-axis direction) that intersects perpendicularly to the X direction, and a Z direction (Z-axis direction) that intersects perpendicularly to the X direction and the Y direction are defined.
[0017] The direction from the semiconductor chip 10 toward the second portion p2 is along the first direction (Z-axis direction). For example, the second portion p2 is located above the semiconductor chip 10.
[0018] The area of the third electrode 13 in a plane perpendicular to the first direction (Z-axis direction) is smaller than the area of the second electrode 12 in a plane perpendicular to the first direction.
[0019] The direction from the second part p2 towards the first part p1 is along the second direction. The second direction intersects the first direction (Z-axis direction). In this example, the second direction is the X-axis direction. For example, at least a part of the first conductive member 21 extends along the X-axis direction.
[0020] The first intermediate part mp1 is located between the second part p2 and the first part p1 in the second direction (X-axis direction). The position of the first intermediate part mp1 in the second direction is between the position of the second part p2 in the second direction and the position of the first part p1 in the second direction. In this example, the first intermediate part mp1 is located above the second part p2 and the first part p1. The first part p1 and the second part p2 are provided between the semiconductor chip 10 and the first intermediate part mp1 in the first direction (Z-axis direction).
[0021] The second conductive member 22 includes a third part p3 and a fourth part p4. The direction from the third part p3 towards the fourth part p4 is along the third direction. The third direction intersects the first direction (Z-axis direction). In this example, the third direction is the X-axis direction and is along the second direction.
[0022] As shown in FIG. 1(a), the first connection member 41 is provided between the first part p1 and the third part p3. The first connection member 41 is conductive. The first connection member 41 includes, for example, solder.
[0023] The second electrode 12 (e.g., source electrode) of the semiconductor chip 10 is electrically connected to the second conductive member 22 via the first conductive member 21 and the first connection member 41. The fourth part p4 of the second conductive member 22 serves as an external terminal connected to the outside.
[0024] In this way, the first conductive member 21 electrically connects the semiconductor chip 10 and the second conductive member 22 (external terminal, lead terminal). The first conductive member 21 is, for example, a connector (source connector). On the other hand, the third part p3 of the second conductive member 22 functions as a post.
[0025] The resin 30 covers these components, for example. The resin 30 is, for example, a sealing resin.
[0026] As shown in Figures 1(b) and 1(c), the resin 30 does not cover the fourth portion p4 of the second conductive member 22. The fourth portion p4 is exposed from the resin 30. This allows the fourth portion p4 to be electrically connected to the outside.
[0027] On the other hand, as shown in Figure 1(b), a resin 30 is provided above the first conductive member 21. For example, in the Z-axis direction, the second portion p2 is located between a part of the resin 30 and the semiconductor chip 10.
[0028] As shown in Figures 1(a) and 1(b), the second connecting member 42 is located between the semiconductor chip 10 and the second portion p2. The second connecting member 42 is conductive. The second connecting member 42 includes, for example, solder. The second connecting member 42 electrically connects the second electrode of the semiconductor chip 10 and the second portion p2.
[0029] As shown in Figure 1(a), the second conductive member 22 further includes a second intermediate portion mp2 in addition to the third portion p3 and the fourth portion p4. In the third direction (in this example, along the second direction, for example, the X-axis direction), the second intermediate portion mp2 is located between the third portion p3 and the fourth portion p4. In this example, the third portion p3 is located above the fourth portion p4. For example, the position of the second intermediate portion mp2 in the first direction (Z-axis direction) is between the position of the first connecting member 41 in the first direction, the position of the third portion p3 in the first direction, and the position of the fourth portion p4 in the first direction. For example, in the Z-axis direction, the third portion p3 is located between a portion of the resin 30 and the first connecting member 41.
[0030] As shown in Figure 1(b), the third conductive member 23 includes a fifth portion p5 and a sixth portion p6. In the first direction (Z-axis direction), the fifth portion p5 overlaps with the semiconductor chip 10. The direction from the fifth portion p5 toward the semiconductor chip 10 is along the first direction (Z-axis direction).
[0031] The third conductive member 23 is, for example, a bed. The third conductive member 23 may also function as a heat dissipation path for the heat generated in the semiconductor chip 10.
[0032] At least a portion of the sixth portion p6 of the third conductive member 23 is not covered by the resin 30. At least a portion of the sixth portion p6 is exposed from the resin 30. The sixth portion p6 becomes another external terminal connected to the outside.
[0033] As shown in Figure 1(a), the third connecting member 43 is provided between the fifth portion p5 and the semiconductor chip 10. In this example, the third connecting member 43 is provided between the fifth portion p5 and the second electrode 12 (e.g., the drain electrode). The third connecting member 43 is conductive. The third connecting member 43 includes, for example, solder. The third connecting member 43 electrically connects the fifth portion p5 and the semiconductor chip 10 (e.g., the second electrode 12).
[0034] In this way, the first conductive member 21 is electrically connected to the second electrode 12 (for example, the source electrode). The second conductive member 22 is electrically connected to the second electrode 12 via the first conductive member 21. The third conductive member 23 is electrically connected to the first electrode 11 (for example, the drain electrode).
[0035] As shown in Figure 2, the fourth conductive member 24 includes a seventh portion p7 and an eighth portion p8. In this example, the fourth conductive member 24 further includes a third intermediate portion mp3.
[0036] The eighth part p8 is electrically connected to the semiconductor chip 10. In this example, the eighth part p8 is electrically connected to the third electrode 13 (see Figure 2).
[0037] The direction from the semiconductor chip 10 towards the eighth portion p8 is along the first direction (Z-axis direction). For example, the eighth portion p8 is located above the semiconductor chip 10.
[0038] The direction from the eighth section p8 to the seventh section p7 is along the fourth direction. The fourth direction intersects the first direction (Z-axis direction). In this example, the fourth direction is the X-axis direction. For example, at least a portion of the fourth conductive member 24 extends along the X-axis direction.
[0039] The third intermediate portion mp3 is located between the eighth portion p8 and the seventh portion p7 in the fourth direction (X-axis direction). The position of the third intermediate portion mp3 in the fourth direction is between the position of the eighth portion p8 and the position of the seventh portion p7 in the fourth direction. In this example, the third intermediate portion mp3 is located above the eighth portion p8 and the seventh portion p7. The seventh portion p7 and the eighth portion p8 are located between the semiconductor chip 10 and the third intermediate portion mp3 in the first direction (Z-axis direction).
[0040] The third intermediate portion mp3 has a through hole 26 running parallel to the Z direction and along the Z direction. A portion of the resin 30 is provided inside the through hole 26.
[0041] The shape of the through-hole 26 in a plane perpendicular to the Z direction is, for example, circular or elliptical. However, the shape of the through-hole 26 in a plane parallel to the Z direction is not limited to circular or elliptical.
[0042] The fifth conductive member 25 includes a ninth portion p9 and a tenth portion p10. The direction from the ninth portion p9 to the tenth portion p10 is along the fifth direction. The fifth direction intersects the first direction (Z-axis direction). In this example, the fifth direction is the X-axis direction.
[0043] As shown in Figure 2, the fifth conductive member 25 further includes a fourth intermediate portion mp4 in addition to the ninth portion p9 and the tenth portion p10. In the fifth direction, the fourth intermediate portion mp4 is located between the ninth portion p9 and the tenth portion p10. In this example, the ninth portion p9 is located above the tenth portion p10. For example, the position of the fourth intermediate portion mp4 in the first direction (Z-axis direction) is between the position of the fourth connecting member 44 in the first direction, the position of the ninth portion p9 in the first direction, and the position of the tenth portion in the first direction. For example, in the Z-axis direction, the ninth portion p9 is located between a part of the resin 30 and the fourth connecting member 44.
[0044] As shown in Figure 2, the fifth connecting member 45 is located between the semiconductor chip 10 and the eighth portion p8. The fifth connecting member 45 is conductive. The fifth connecting member 45 includes, for example, solder. The fifth connecting member 45 electrically connects the third electrode 13 of the semiconductor chip 10 and the eighth portion p8.
[0045] As shown in Figure 2, the fourth connecting member 44 is provided between the seventh portion p7 and the ninth portion p9. The fourth connecting member 44 electrically connects the seventh portion p7 and the ninth portion p9. The fourth connecting member 44 is conductive. The fourth connecting member 44 includes, for example, solder.
[0046] The third electrode 13 (e.g., gate electrode) of the semiconductor chip 10 is electrically connected to the fifth conductive member 25 via the fourth conductive member 24 and the fourth connecting member 44. The tenth portion p10 of the fifth conductive member 25 becomes an external terminal connected to the outside.
[0047] Thus, the fourth conductive member 24 electrically connects the semiconductor chip 10 and the fifth conductive member 25 (external terminal, lead terminal). The fourth conductive member 24 is, for example, a connector (gate connector). On the other hand, the tenth portion p10 of the fifth conductive member 25 functions as a post.
[0048] Here, the thicknesses of the seventh portion p7, the third intermediate portion mp3, and the eighth portion p8 in the first direction are, for example, equal. However, the thicknesses of the seventh portion p7, the third intermediate portion mp3, and the eighth portion p8 in the first direction may be different.
[0049] Furthermore, the thicknesses of the first portion p1, the first intermediate portion mp1, and the second portion p2 in the first direction are, for example, equal. However, the thicknesses of the first portion p1, the first intermediate portion mp1, and the second portion p2 in the first direction may be different.
[0050] As shown in Figure 2, the resin 30 does not cover the tenth portion p10 of the fifth conductive member 25. The tenth portion p10 is exposed from the resin 30. This allows the tenth portion p10 to be electrically connected to the outside.
[0051] The first conductive member 21, the second conductive member 22, the third conductive member 23, the fourth conductive member 24, and the fifth conductive member 25 are made of a metal such as Cu (copper). The first connecting member 41, the second connecting member 42, the third connecting member 43, the fourth connecting member 44, and the fifth connecting member 45 are made of a material such as solder. The resin 30 is made of a material such as epoxy resin. The resin 30 may also contain a filler, such as silicon oxide.
[0052] The semiconductor device 100 is, for example, an SOP (small outline package) type semiconductor device.
[0053] Figures 3 and 4 are schematic top views illustrating the manufacturing process of the semiconductor device according to this embodiment.
[0054] The third conductive member 23 is fixed to the suspension lead 29 via the sixth portion p6. The second conductive member 22 is fixed to the suspension lead 29 via the fourth portion p4. The fifth conductive member 25 is fixed to the suspension lead 29 via the tenth portion.
[0055] For example, the semiconductor chip 10, the first conductive member 21, the second conductive member 22, the third conductive member 23, the fourth conductive member 24, and the fifth conductive member 25 are fixed together using the first connecting member 41, the second connecting member 42, the third connecting member 43, the fourth connecting member 44, and the fifth connecting member 45 by a reflow process (Figure 3).
[0056] Next, using a resin encapsulation mold (not shown), the semiconductor device in the process of being manufactured, as shown in Figure 3, is clamped so that a portion of the fourth part p4, a portion of the sixth part p6, and a portion of the tenth part p10 are exposed to the outside of the resin encapsulation mold.
[0057] Next, the molten resin 30 is filled into the inside of a resin sealing mold (not shown). This seals the semiconductor chip 10, the first conductive member 21, the second conductive member 22, the third conductive member 23, the fourth conductive member 24, the fifth conductive member 25, the first connecting member 41, the second connecting member 42, the third connecting member 43, the fourth connecting member 44, and the fifth connecting member 45 using the resin 30. At this time, the molten resin 30 is filled from the lower right side to the upper left side of Figure 4, as shown in Figure 4. A resin portion 30a is formed at the entrance of the resin sealing mold. A resin portion 30b is formed at the exit of the resin sealing mold.
[0058] Next, the suspension lead 29 is cut as appropriate between the fourth portion p4, the sixth portion p6, and the tenth portion p10. Also, the resin portion 30a and the resin portion 30b are cut as appropriate. This yields the semiconductor device 100 of this embodiment.
[0059] Next, the effects and advantages of the semiconductor device of this embodiment will be described.
[0060] Figure 5 is a schematic cross-sectional view showing the manufacturing process of a semiconductor device that is a comparative embodiment of this model. In Figure 5, the direction in which the molten resin 30 flows when it is filled into a resin encapsulation mold (not shown) is indicated by a black arrow.
[0061] Note that some of the component parts are omitted from the illustration in Figure 5.
[0062] Figure 5(a) is a schematic cross-sectional view of the semiconductor device of the comparative configuration corresponding to Figure 1(c) along the line B3-B4. Note that the line B3-B4 is a line for viewing the same cross-section as the cross-section formed by the line B1-B2 from the -Y axis direction. Figure 5(b) is a schematic cross-sectional view of the semiconductor device of the comparative configuration corresponding to Figure 1(c) along the line C1-C2. Figure 5(c) is a schematic cross-sectional view of the semiconductor device of the comparative configuration corresponding to Figure 1(c) along the line D1-D2. Figure 5(d) is a schematic cross-sectional view of the semiconductor device of the comparative configuration corresponding to Figure 1(d) along the line A3-A4. Note that the line A3-A4 is a line for viewing the same cross-section as the cross-section formed by the line A1-A2 from the -Y axis direction.
[0063] A problem was occurring with the connection between the conductive member and the semiconductor chip 10. In particular, a problem was occurring with the connection between the fourth conductive member 24 and the third electrode 13 of the semiconductor chip 10, as shown in Figure 2. For example, when solder was used as the fifth connecting member 45, there was a problem with the solder's wettability to the fourth conductive member 24 and the third electrode 13. This resulted in a connection problem between the fourth conductive member 24 and the third electrode 13.
[0064] However, when the above-mentioned sealing using resin 30 is performed, the injection pressure of the molten resin 30 inside the resin sealing mold sometimes masks connection problems between the fourth conductive member 24 and the third electrode 13.
[0065] Specifically, as shown in Figure 5(b), the molten resin 30 applies force in the Y and -Z directions to the third intermediate portion mp3 of the fourth conductive member 24. As a result, even if a connection problem occurred between the fourth conductive member 24 and the third electrode 13 before the resin 30 was sealed, the sealing of the resin 30 could mask the connection problem. Furthermore, there was a problem in that it was difficult to detect such connection problems through pre-shipment inspection.
[0066] Specifically, as shown in Figure 5(c), the molten resin 30 applies force to the eighth portion p8 in both the Y and -Z directions. As a result, even if a connection problem occurred between the fourth conductive member 24 and the third electrode 13 before the resin 30 was sealed, the sealing of the resin 30 could mask the connection problem. This presented a problem in that it was difficult to detect such connection problems through pre-shipment inspections.
[0067] Therefore, the third intermediate portion mp3 of the fourth conductive member 24 of the semiconductor device 100 in this embodiment includes a through hole 26. The through hole 26 is provided in the semiconductor device 100 so as to be aligned with the Z direction.
[0068] Figure 6 is a schematic cross-sectional view showing the manufacturing process of the semiconductor device according to this embodiment. In Figure 6, as in Figure 5, the direction in which the molten resin 30 flows when it is filled into a resin sealing mold (not shown) is indicated by a black arrow.
[0069] Note that some of the component parts are omitted from the illustration in Figure 6.
[0070] Figure 6(a) is a schematic cross-sectional view along the line B3-B4 in Figure 1(c). Note that the line B3-B4 is a line used to view the same cross-section as the one formed by the line B1-B2, but from the -Y axis direction. Figure 6(b) is a schematic cross-sectional view along the line C1-C2 in Figure 1(c). Figure 6(c) is a schematic cross-sectional view along the line D1-D2 in Figure 1(c). Figure 6(d) is a schematic cross-sectional view along the line A3-A4 in Figure 1(d). Note that the line A3-A4 is a line used to view the same cross-section as the one formed by the line A1-A2, but from the -Y axis direction.
[0071] As shown in Figure 6(b), the molten resin 30 applies force in the Y and -Z directions to the third intermediate portion mp3 of the fourth conductive member 24. However, because the through hole 26 is provided, some of the molten resin 30 flows through the through hole 26 to below the third intermediate portion mp3. Therefore, the force applied to the third intermediate portion mp3 in the Y and -Z directions becomes weaker. As a result, connection problems between the fourth conductive member 24 and the third electrode 13 are less likely to be masked. Also, as described using Figure 4, the molten resin 30 fills from the lower right to the upper left side of Figure 4, as shown in Figure 4. When the exit portion of the resin sealing mold is located close to the fourth conductive member 24 and the fifth conductive member 25, the force applied in the -Z direction increases. As a result, connection problems are less likely to be masked.
[0072] Furthermore, because the through-hole 26 is provided, there is the advantage that the lower part of the third intermediate portion mp3 is quickly filled with the molten resin 30. In this case, even if the force applied in the -Z direction is applied to the third intermediate portion mp3, the lower part of the third intermediate portion mp3 is quickly filled, making it difficult for the third intermediate portion mp3 to deform in the -Z direction. Therefore, the connection problems described above are less likely to be masked.
[0073] The semiconductor device of this embodiment makes it possible to provide a highly reliable semiconductor device.
[0074] (Second Embodiment) The semiconductor device of this embodiment differs from the semiconductor device of the first embodiment in that the shape of the through-hole 26 in the plane perpendicular to the first direction is rectangular. Here, descriptions that overlap with those of the first embodiment are omitted.
[0075] Figure 7 is a schematic perspective view of the semiconductor device 110 of this embodiment.
[0076] The shape of the through-hole 26 in the plane perpendicular to the Z direction may be rectangular.
[0077] The semiconductor device of this embodiment makes it possible to provide a highly reliable semiconductor device.
[0078] (Third embodiment)
[0079] The semiconductor device of this embodiment includes a semiconductor chip having a first surface, a second surface, a first electrode provided on the first surface, a second electrode provided on the second surface, and a third electrode provided on the second surface; a first conductive member including a first portion and a second portion, wherein the first portion is electrically connected to the first electrode, the direction from the first portion toward the semiconductor chip follows a first direction, and the direction from the second portion toward the first portion follows a second direction intersecting the first direction; a conductive first connecting member provided between the first conductive member and the first electrode; and a second conductive member including a third portion and a fourth portion, wherein the direction from the third portion toward the fourth portion follows the first direction. The third conductive member comprises a second conductive member oriented along a third intersecting direction, a conductive second connecting member provided between the second electrode and the third portion, a third conductive member including a fifth portion, an intermediate portion and a sixth portion, wherein the direction from the fifth portion to the sixth portion is oriented along a fourth direction intersecting the first direction, the intermediate portion in the fourth direction is provided between the fifth portion and the sixth portion, and the fifth portion in the first direction is provided between the semiconductor chip and the intermediate portion, a protrusion provided in the intermediate portion, the intermediate portion in the first direction is provided between the semiconductor chip and the protrusion, and a conductive third connecting member provided between the third electrode and the fifth portion.
[0080] The semiconductor device of this embodiment differs from the semiconductor devices of the first and second embodiments in that it further comprises a protrusion provided in the third intermediate portion, wherein in the first direction, the third intermediate portion is provided between the semiconductor chip and the protrusion. Here, descriptions that overlap with the first and second embodiments are omitted.
[0081] Figure 8 is a schematic diagram of the semiconductor device 120 of this embodiment. Figure 8 is a schematic perspective view of the semiconductor device 120 of this embodiment. Figure 9 is a schematic cross-sectional view showing the manufacturing process of the semiconductor device of this embodiment.
[0082] A protrusion 27 is provided on the third intermediate portion mp3. In the first direction (Z-axis direction), the third intermediate portion mp3 is provided between the semiconductor chip 10 and the protrusion 27.
[0083] In Figure 8, the shape of the protrusion 27 is that of a rectangular parallelepiped. However, the shape of the protrusion 27 is not limited to a rectangular parallelepiped. For example, the shape of the protrusion 27 may be that of a cylinder with its height direction parallel to the first direction (Z-axis direction).
[0084] The length L1 of the protrusion 27 in the fourth direction (X-axis direction) is preferably longer than the length L2 of the protrusion 27 in the sixth direction that intersects the first direction (Z-axis direction) and the fourth direction (X-axis direction). In this example, the sixth direction is the Y-axis direction.
[0085] During the manufacturing process, the molten resin 30 collides with the protrusion 27 as it flows in the Y direction. The resin 30 that collides with the protrusion 27 then flows in the Z direction. As a result, the force in the -Z direction applied to the third intermediate portion mp3 of the fourth conductive member 24 is weakened. Therefore, connection problems between the fourth conductive member 24 and the third electrode 13 are less likely to be masked.
[0086] If the length L1 of the protrusion 27 in the fourth direction (X-axis direction) is longer than the length L2 of the protrusion 27 in the sixth direction intersecting the first direction (Z-axis direction) and the fourth direction (X-axis direction), it is considered that more molten resin 30 flowing parallel to the Y-axis direction can be effectively made to collide with the protrusion 27. As a result, the amount of resin 30 flowing in the Z direction increases. Therefore, the force in the -Z direction applied to the third intermediate portion mp3 of the fourth conductive member 24 is further reduced.
[0087] The semiconductor device of this embodiment makes it possible to provide a highly reliable semiconductor device.
[0088] While several embodiments and examples of the present invention have been described, these embodiments and examples are presented as examples only and are not intended to limit the scope of the invention. These novel embodiments can be carried out in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included in the scope and spirit of the invention, as well as in the claims of the invention and its equivalents. [Explanation of Symbols]
[0089] 10: Semiconductor chip 10a: First surface 10b: Second surface 10s: Semiconductor layer 11: First electrode 12: Second electrode 13: Third electrode 21: First conductive member 22: Second conductive member 23: Third conductive member 24: Fourth conductive member 25: Fifth conductive member 26: Through hole 27: Protrusion 29: Suspension lead 30: Resin 30a: Resin part 30b: Resin part 41: First connecting member 42: Second connecting member 43: Third connecting member 44: Fourth connecting member 45: Fifth connecting member 100: Semiconductor device 110: Semiconductor device 120: Semiconductor device mp1: First intermediate part mp2: Second intermediate part mp3: Third intermediate part mp4 :4th intermediate part p1 :1st part p2 :2nd part p3 :3rd part p4 :4th part p5 :5th part p6 :6th part p7 :7th part p8 :8th part p9 :9th part p10 :10th part t1 :Thickness t4 :Thickness
Claims
1. A semiconductor chip having a first surface, a second surface, a first electrode provided on the first surface, a second electrode provided on the second surface, and a third electrode provided on the second surface. A first conductive member comprising a first portion and a second portion, wherein the first portion is electrically connected to the first electrode, the direction from the first portion toward the semiconductor chip follows a first direction, and the direction from the second portion toward the first portion follows a second direction intersecting the first direction, A conductive first connecting member is provided between the first conductive member and the first electrode, A second conductive member comprising a third portion and a fourth portion, wherein the direction from the third portion toward the fourth portion is along a third direction that intersects with the first direction, A conductive second connecting member is provided between the second electrode and the third portion, A third conductive member comprising a fifth portion, an intermediate portion and a sixth portion, wherein the direction from the fifth portion toward the sixth portion follows a fourth direction intersecting the first direction, the intermediate portion is provided between the fifth portion and the sixth portion in the fourth direction, the fifth portion is provided between the semiconductor chip and the intermediate portion in the first direction, and the intermediate portion has a through hole, A conductive third connecting member is provided between the third electrode and the fifth portion, A semiconductor device comprising the above, wherein the area of the third electrode in a plane perpendicular to the first direction is smaller than the area of the second electrode in a plane perpendicular to the first direction.
2. The through hole is aligned with the first direction. The semiconductor device according to claim 1.
3. The shape of the through-hole in a plane perpendicular to the first direction is circular or elliptical. The semiconductor device according to claim 1.
4. The shape of the through-hole in a plane perpendicular to the first direction is rectangular. The semiconductor device according to claim 1.
5. A semiconductor chip having a first surface, a second surface, a first electrode provided on the first surface, a second electrode provided on the second surface, and a third electrode provided on the second surface. A first conductive member comprising a first portion and a second portion, wherein the first portion is electrically connected to the first electrode, the direction from the first portion toward the semiconductor chip is along a first direction, and the direction from the second portion toward the first portion is along a second direction intersecting the first direction, A conductive first connecting member is provided between the first conductive member and the first electrode, A second conductive member comprising a third portion and a fourth portion, wherein the direction from the third portion toward the fourth portion is along a third direction that intersects with the first direction, A conductive second connecting member is provided between the second electrode and the third portion, A third conductive member comprising a fifth portion, an intermediate portion, and a sixth portion, wherein the direction from the fifth portion to the sixth portion follows a fourth direction intersecting the first direction, the intermediate portion is provided between the fifth portion and the sixth portion in the fourth direction, and the fifth portion is provided between the semiconductor chip and the intermediate portion in the first direction, The aforementioned intermediate portion is provided with a protrusion, and in the first direction, the intermediate portion is provided between the semiconductor chip and the protrusion, A conductive third connecting member is provided between the third electrode and the fifth portion, A semiconductor device comprising the above, wherein the area of the third electrode in a plane perpendicular to the first direction is smaller than the area of the second electrode in a plane perpendicular to the first direction.
6. The length of the protrusion in the fourth direction is longer than the length of the protrusion in the sixth direction that intersects the first and fourth directions. The semiconductor device according to claim 5.