A process for manufacturing components with layers made from single-crystal material that fit a large thermal budget.

Abstract

To provide a process of manufacturing a component with a layer made from a single crystal material that fits a large thermal budget.SOLUTION: A process of manufacturing a component includes the step of transferring at least one layer of a plurality of piezoelectric or pyroelectric or ferroelectric materials (100a) forming a part of a donor substrate (100) to a final substrate (700), and binding the layer to a temporary substrate through the manufacturing of a brittle separation region between a donor substrate of the single crystal piezoelectric or pyroelectric or ferroelectric material and the temporary substrate (200). At least two layers of different materials (300, 310) ensure contact of two compounds that tend to produce interdiffusion of one or more of the at least one of the two compounds.SELECTED DRAWING: Figure 4L

Claims

1. A process for manufacturing a component comprising the step of transferring an assembly having one or more layers of single-crystal piezoelectric, pyroelectric, or ferroelectric material to a final substrate, in at least the following order: - A step of implanting ions into a donor substrate of the single-crystal piezoelectric, pyroelectric, or ferroelectric material (100) at the implantation level so as to define a layer region within the single-crystal piezoelectric, pyroelectric, or ferroelectric material, ○ A first bonding step in which a donor substrate of the single-crystal piezoelectric, pyroelectric, or ferroelectric material is bonded to a temporary substrate (200), wherein the first bonding step comprises generating a brittle separation interface region between the donor substrate of the single-crystal piezoelectric, pyroelectric, or ferroelectric material and the temporary substrate, wherein the brittle separation interface region comprises at least two layers of different materials to ensure that the two compounds come into contact, having a tendency to generate interdiffusion of one or more components of at least one of the two compounds, The steps include: thinning a donor substrate of the single-crystal piezoelectric, pyroelectric, or ferroelectric material to the injection level so as to define a layer (100a) of the single-crystal piezoelectric, pyroelectric, or ferroelectric material; ○ A step of healing residual defects generated by ion implantation into the donor substrate by thermal annealing of the layer (100a) of the single-crystal piezoelectric, pyroelectric, or ferroelectric material, A first set of steps having, In the following order: - A second bonding step in which the assembly having one or more layers of the one or more single-crystal piezoelectric, pyroelectric, or ferroelectric materials and the temporary substrate is bonded to the final substrate (700), ○ A step of separating the temporary substrate (200) from the layer of the single-crystal piezoelectric, pyroelectric, or ferroelectric material via the brittle separation interface region, A second set of steps following the first set of steps, having at least the following: Sharpening process.

2. The manufacturing process according to claim 1, wherein a second set of the steps comprises the step of manufacturing a first functional structure on one of the layers of the single-crystal piezoelectric, pyroelectric, or ferroelectric material.

3. The manufacturing process according to claim 1 or 2, wherein a second set of the steps comprises the step of manufacturing a second functional structure (800) on one of the layers of the single-crystal piezoelectric, pyroelectric, or ferroelectric material.

4. A manufacturing process according to any one of claims 1 to 3, wherein, after the step of thinning a donor substrate manufactured from a first single-crystal piezoelectric or pyroelectric or ferroelectric material to the injection level so as to define a layer of single-crystal piezoelectric or pyroelectric or ferroelectric material, the process comprises the step of manufacturing a further layer of a second single-crystal piezoelectric or pyroelectric or ferroelectric material on the surface of the layer of single-crystal piezoelectric or pyroelectric or ferroelectric material, wherein the first single-crystal piezoelectric or pyroelectric or ferroelectric material and the second single-crystal piezoelectric or pyroelectric or ferroelectric material are the same or different.

5. The manufacturing process according to claim 4, wherein the thickness of the layer of the single-crystal piezoelectric, pyroelectric, or ferroelectric material is 1 micron or less, and the thickness of the further layer of the second single-crystal piezoelectric, pyroelectric, or ferroelectric material is 0.1 to 5 microns.

6. The manufacturing of the brittle separation interface region between the donor substrate of the single-crystal piezoelectric, pyroelectric, or ferroelectric material and the temporary substrate is at least: - A step of manufacturing an oxide or nitride layer, - The step of depositing a layer of precious metal, - A step of performing thermal annealing which tends to generate interdiffusion of one or more components of at least one of the two compounds, A manufacturing process according to any one of claims 1 to 5, comprising:

7. - A step of producing a silicon oxide or silicon nitride layer, - A step of depositing a layer of noble metal such as Pt, Au, Rh, Os, Pd, Ru, or Ir, The manufacturing process according to claim 6, comprising:

8. The manufacturing process according to claim 6 or 7, wherein the step of healing residual defects via thermal annealing is performed with a thermal budget that tends to result in the diffusion of the noble metal into the oxide or nitride, the thermal budget being consumed at a temperature of 300°C to 700°C over a period of time of 1 to 10 hours.

9. The manufacturing process according to any one of claims 1 to 8, wherein the first bonding step of bonding the substrate of the single-crystal piezoelectric, pyroelectric, or ferroelectric material to a temporary substrate (200) is carried out with a first bonding layer made from a constituent material of one of the materials to ensure that two compounds are in contact, having a tendency to generate interdiffusion of one or more constituents of at least one of the two compounds.

10. The first bonding step, in which the substrate of the single-crystal piezoelectric, pyroelectric, or ferroelectric material is bonded to a temporary substrate (200), is performed with a first bonding layer, the first bonding layer being silicon oxide (SiO ２ The manufacturing process according to any one of claims 1 to 9, wherein the process is a layer of ), a metal layer, or a layer of a polymer made from benzocyclobutane (BCB).

11. The manufacturing process according to any one of claims 1 to 10, wherein the second bonding step, in which an assembly having one or more layers of the one or more single-crystal piezoelectric, pyroelectric, or ferroelectric materials and the temporary substrate is bonded to a final substrate (700), is carried out with at least one second bonding layer (600), the second bonding layer being inorganic.

12. The manufacturing process according to any one of claims 1 to 11, wherein the step of separating the temporary substrate (200) is performed mechanically through the brittle separation interface region.

13. The manufacturing process according to any one of claims 1 to 12, wherein the donor substrate for the single-crystal piezoelectric, pyroelectric, or ferroelectric material is manufactured from lithium niobate or lithium tantalate.

14. The manufacturing process according to any one of claims 1 to 13, wherein the temporary substrate has the same properties as the donor substrate of the single-crystal piezoelectric, pyroelectric, or ferroelectric material.

15. The manufacturing process according to any one of claims 1 to 14, wherein the final substrate is manufactured from a material made from lithium niobate, lithium tantalate, silicon, glass, or sapphire.

16. - A step of manufacturing a first metallic functional structure (400) on a first surface of a layer of the single-crystal piezoelectric, pyroelectric, or ferroelectric material, wherein the first metallic functional structure is configured to be a continuous electrode or a series of discontinuous electrodes, - A step of manufacturing a second metallic functional structure (800) on the opposite side of the layer of the single-crystal piezoelectric, pyroelectric, or ferroelectric material, or on the opposite side of another layer of the single-crystal piezoelectric, pyroelectric, or ferroelectric material, wherein the second metallic functional structure is configured to be a continuous electrode or a series of discontinuous electrodes, and the first surface corresponds to the thinned surface of the donor substrate of the single-crystal piezoelectric, pyroelectric, or ferroelectric material, A process for manufacturing the component according to any one of claims 2 to 15, comprising:

17. The component is a sound wave resonator, and the process is - A step of depositing a sacrificial layer (500) on the surface of a layer of single-crystal piezoelectric, pyroelectric, or ferroelectric material, or on the surface of a further layer of a second single-crystal piezoelectric, pyroelectric, or ferroelectric material, and / or on the surface of the first metallic functional structure, wherein the sacrificial layer is manufactured from amorphous silicon, - A step of generating at least one well within the sacrificial layer (500), - The step of etching the well to produce a suspended membrane of single-crystal piezoelectric, pyroelectric, or ferroelectric material, A manufacturing process according to any one of claims 16, comprising:

18. The manufacturing process according to any one of claims 1 to 16, wherein the component is a sound wave resonator, and the process comprises the step of generating a cavity in the final substrate (700) before the second coupling step.

19. The component is an acoustic resonator, and the process alternately generates a Bragg mirror structure on the surface of the single-crystal piezoelectric, pyroelectric, or ferroelectric material layer, or on the surface of a second single-crystal piezoelectric, pyroelectric, or ferroelectric material further layer (100a, 101a, 102a), SiO ２ / W, or SiO ２ / Mo, or SiO ２ A manufacturing process according to any one of claims 1 to 16, comprising the step of manufacturing a laminate having layers of AlN or SiOC / SiN (600, 610, 601, 620) having different acoustic impedances.

20. The component has a set of at least two stacked bulk acoustic resonators, and the process is The steps include manufacturing a first resonator having at least a first layer (101a) of a single-crystal piezoelectric, pyroelectric, or ferroelectric material, a first metallic functional structure (401), and a second metallic functional structure (801) on a final substrate (701), ○ A step of depositing one or more acoustic coupling or isolation layers on the surface of the first resonator (901), ○ A step of generating a first metallic functional structure (402) having a tendency to form the first electrode of the second resonator on the surface of one or more acoustic coupling or acoustic isolation layers, 〇The step of transferring a pre-transferred second layer (102a) of single-crystal piezoelectric, pyroelectric, or ferroelectric material to the temporary substrate (202) via brittle separation interface regions (302, 312) to the surface of the temporary substrate (202), ○The step of removing the temporary substrate so as to leave the second surface of the second layer (102a) in a free state, ○ A step of generating a second metallic functional structure (802) so as to define the second resonator, A manufacturing process according to any one of claims 1 to 19, comprising:

21. The manufacturing process according to any one of claims 1 to 16, wherein the component is a pyroelectric sensor having an active layer (100a) between two continuous electrodes (400, 800), and the process further comprises the step of partially etching the final substrate (700) from the rear side so as to define a membrane within the final substrate.

22. The aforementioned brittle separation interface region consists of a layer of noble metal and the following materials: - Oxides, - Nitride, - Silicon oxynitride, - Silicon carbide (SiOC), -SiOF A manufacturing process according to any one of claims 1 to 21, comprising another layer having at least one of the following:

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