Manufacturing equipment for light-emitting devices

Abstract

The present invention provides a production apparatus which is capable of continuously performing steps from fabrication to sealing of an organic compound film. This production apparatus is capable of continuously performing a patterning step of a light emitting device and a sealing step for preventing the front surface and the lateral surface of an organic layer from exposure to the atmosphere; and this production apparatus is capable of forming a fine light emitting device that has high luminance and high reliability. In addition, this production apparatus is able to be incorporated into in-line production equipment in which apparatuses are arranged in the order of the steps for a light emitting device, and enables the production with a high throughput.

Description

[Technical Field]

[0001] One aspect of the present invention relates to a manufacturing apparatus and method for a light-emitting device.

[0002] Furthermore, one aspect of the present invention is not limited to the above-mentioned technical field. The technical field of one aspect of the invention disclosed herein relates to a product, method, or method of manufacture. Alternatively, one aspect of the present invention relates to a process, machine, manufacture, or composition of matter. More specifically, examples of the technical field of one aspect of the present invention disclosed herein include semiconductor devices, display devices, liquid crystal display devices, light-emitting devices, lighting devices, energy storage devices, memory devices, imaging devices, methods of operating them, or methods of manufacturing them. [Background technology]

[0003] In recent years, there has been a growing demand for higher resolution display panels. Examples of devices requiring high-resolution display panels include smartphones, tablet devices, and notebook computers. Furthermore, stationary display devices such as television sets and monitors also require higher resolution and greater detail. Among the devices demanding the highest resolution are those used for virtual reality (VR) and augmented reality (AR).

[0004] Furthermore, typical examples of display devices applicable to display panels include liquid crystal displays, light-emitting devices equipped with light-emitting devices such as organic EL (Electro Luminescence) elements or light-emitting diodes (LEDs), and electronic paper that displays information using electrophoretic methods.

[0005] For example, an organic EL element, which is a light-emitting element, has a structure in which a layer containing a light-emitting organic compound is sandwiched between a pair of electrodes. By applying a voltage to this element, light can be obtained from the light-emitting organic compound. Because a display device using such an organic EL element does not require a backlight, which is necessary for liquid crystal displays, it is possible to realize a thin, lightweight, high-contrast, and low-power display device. For example, an example of a display device using an organic EL element is described in Patent Document 1. [Prior art documents] [Patent Documents]

[0006] [Patent Document 1] Japanese Patent Publication No. 2002-324673 [Overview of the Initiative] [Problems that the invention aims to solve]

[0007] In organic EL display devices capable of full-color display, configurations are known that combine a white light-emitting device and a color filter, and configurations in which RGB light-emitting devices are formed on the same surface.

[0008] While the latter configuration is ideal in terms of power consumption, currently, in the manufacturing of small and medium-sized panels, the light-emitting material is applied using metal masks. However, the process using metal masks has low alignment accuracy, so the area occupied by the light-emitting device within the pixel must be small, making it difficult to increase the aperture ratio.

[0009] Therefore, processes using metal masks have challenges in increasing pixel density or luminescence intensity. To increase the aperture ratio, it is preferable to enlarge the area of ​​the light-emitting device using processes such as lithography. However, since the reliability deteriorates if impurities from the atmosphere (water, oxygen, hydrogen, etc.) enter the organic compounds that make up the light-emitting device, it is necessary to carry out multiple processes in an area with a controlled atmosphere.

[0010] Alternatively, when fabricating light-emitting devices using a vacuum deposition method with a metal mask, there is a challenge in that multiple manufacturing lines are required. For example, since the metal mask needs to be cleaned periodically, at least two or more manufacturing lines must be prepared, and while one manufacturing line is being maintained, the other must be used for manufacturing. Therefore, when considering mass production, multiple manufacturing lines are required. Consequently, there is a challenge in that the initial investment required to introduce the manufacturing equipment is very large.

[0011] Furthermore, there is a demand for small, high-resolution displays for AR and VR applications. Since displays for AR and VR applications are installed in devices such as glasses or goggles that have a small volume, a narrow bezel is preferable. Therefore, it is preferable to place the drivers that drive the pixel circuits below the pixel circuits.

[0012] Therefore, one aspect of the present invention aims to provide a manufacturing apparatus for light-emitting devices that can continuously process the steps from processing an organic compound film to sealing it. Alternatively, one aspect of the present invention aims to provide a manufacturing apparatus for light-emitting devices that can continuously process the steps from forming the light-emitting device to sealing it. Alternatively, one aspect of the present invention aims to provide a manufacturing apparatus for light-emitting devices that can form a light-emitting device without using a metal mask. Alternatively, one aspect of the present invention aims to provide a method for manufacturing a light-emitting device.

[0013] Furthermore, the description of these problems does not preclude the existence of other problems. Moreover, one aspect of the present invention does not need to solve all of these problems. Other problems will naturally become apparent from the description in the specification, drawings, and claims, and it is possible to extract other problems from the description in the specification, drawings, and claims. [Means for solving the problem]

[0014] One aspect of the present invention relates to an apparatus for manufacturing light-emitting devices.

[0015] One aspect of the present invention has a first cluster and a second cluster. The second cluster is connected to the first cluster via a first buffer chamber. For a workpiece on which an organic compound film, a first inorganic film, a second inorganic film, and a resist mask are laminated in this order, the first cluster has a function of etching the first inorganic film and the second inorganic film, a function of etching the organic compound film to form an organic compound layer, a function of removing the resist mask, a function of removing the second inorganic film, and a function of forming a third inorganic film that covers the side surface of the organic compound layer. The second cluster has a function of applying a resin onto the third inorganic film, a function of removing unnecessary portions of the resin, and a function of curing the resin, in an inert gas atmosphere. It is a manufacturing apparatus for a light-emitting device.

[0016] The first cluster can have a first dry etching apparatus, a second dry etching apparatus, a third dry etching apparatus, and a film forming apparatus. The second cluster can have a coating apparatus, a first baking apparatus, an exposure apparatus, a developing apparatus, and a second baking apparatus.

[0017] Also, the second dry etching apparatus can have an ashing function.

[0018] The film forming apparatus can be an ALD apparatus.

[0019] Furthermore, it has a third cluster. The third cluster is connected to the second cluster via a second buffer chamber. The third cluster can have a function of etching the third inorganic film and the first inorganic film using the resin as a mask.

[0020] The third cluster can have a fourth dry etching apparatus and a first wet etching apparatus. Alternatively, the third cluster can have a first wet etching apparatus and a second wet etching apparatus.

[0021] Alternatively, the third cluster may have a function of etching the third inorganic film using the resin as a mask, ashing the end of the resin to retreat it, and etching the first inorganic film.

[0022] In this case, the third cluster can include a fourth dry etching apparatus, a dry etching apparatus or an ashing apparatus having an ashing function, and a first wet etching apparatus. Alternatively, it may include a first wet etching apparatus, a dry etching apparatus or an ashing apparatus having an ashing function, and a second wet etching apparatus.

[0023] Furthermore, it has a fourth cluster, the fourth cluster is connected to the third cluster via a third buffer chamber, and the fourth cluster can have a function of forming a conductive layer and an insulating layer on the organic compound layer.

[0024] The fourth cluster can have two or more of a vapor deposition apparatus, a sputtering apparatus, and an ALD apparatus.

Advantages of the Invention

[0025] By using one aspect of the present invention, it is possible to provide a manufacturing apparatus for a light-emitting device capable of continuously processing the steps from the processing of the organic compound film to the sealing. Alternatively, it is possible to provide a manufacturing apparatus for a light-emitting device capable of continuously processing the steps from the formation of the light-emitting device to the sealing. Alternatively, it is possible to provide a manufacturing apparatus for a light-emitting device capable of forming a light-emitting device without using a metal mask. Alternatively, it is possible to provide a manufacturing method for a light-emitting device.

[0026] Note that the description of these effects does not prevent the existence of other effects. Note that one aspect of the present invention does not necessarily have to have all of these effects. Note that other effects can be extracted from the description in the specification, drawings, claims, etc.

Brief Description of the Drawings

[0027] Figure 1 is a diagram illustrating the manufacturing equipment. Figures 2A and 2B illustrate the manufacturing apparatus. Figure 3 is a diagram illustrating the manufacturing equipment. Figure 4 is a diagram illustrating the manufacturing equipment. Figure 5 is a block diagram illustrating the manufacturing equipment. Figures 6A and 6B illustrate the manufacturing apparatus. Figures 7A and 7B illustrate the manufacturing apparatus. Figure 8 is a diagram illustrating the manufacturing equipment. Figure 9 is a block diagram illustrating the manufacturing equipment. Figures 10A and 10B are diagrams illustrating the manufacturing equipment. Figures 11A and 11B illustrate the loading and unloading of cassettes. Figure 11C illustrates the transport vehicle and transport container. Figure 12A is a diagram illustrating a vacuum processing apparatus. Figure 12B is a diagram illustrating the loading of a substrate into the vacuum processing apparatus. Figures 13A to 13C show an example of the number of display devices per substrate. Figures 14A to 14G illustrate a vacuum processing apparatus. Figure 15 is a diagram illustrating a display device. Figures 16A to 16C illustrate the display device. Figures 17A to 17E illustrate the method for manufacturing a display device. Figures 18A to 18E illustrate the method for manufacturing a display device. Figures 19A to 19E illustrate the method for manufacturing a display device. Figures 20A to 20E illustrate the method for manufacturing a display device. Figures 21A to 21E illustrate the display device. Figure 22 is a diagram illustrating the manufacturing equipment. [Modes for carrying out the invention]

[0028] Embodiments will be described in detail with reference to the drawings. However, it will be readily apparent to those skilled in the art that the present invention is not limited to the following description, and that its form and details can be modified in various ways without departing from the spirit and scope of the invention. Therefore, the present invention is not to be interpreted as being limited to the descriptions of the embodiments shown below. In the configuration of the invention described below, the same reference numerals are used in common between different drawings for the same parts or parts having similar functions, and repeated descriptions may be omitted. In addition, hatching of the same elements constituting the figures may be omitted or changed as appropriate between different drawings.

[0029] (Embodiment 1) In this embodiment, a manufacturing apparatus for a light-emitting device, which is one aspect of the present invention, will be described with reference to the drawings.

[0030] One aspect of the present invention is a manufacturing apparatus mainly used for forming display devices having light-emitting devices (also called light-emitting elements) such as organic EL elements. To miniaturize organic EL elements or increase the occupied area in pixels, it is preferable to use a lithography process. However, if impurities such as water, oxygen, and hydrogen enter the organic EL element, its reliability will be compromised. Therefore, it is necessary to seal the surface and sides of the patterned organic compound layer so that they are not exposed to the atmosphere, and to control the atmosphere to have a low dew point during the manufacturing process.

[0031] It is preferable to seal the sides of the above-mentioned organic compound layer with an inorganic insulating layer and an organic insulating layer. In particular, by forming the organic insulating layer to fill the spaces between the organic compound layers, it is possible to prevent step breaks in the electrodes formed on the organic compound layer. A manufacturing apparatus according to one embodiment of the present invention can form the inorganic insulating layer and the organic insulating layer that seal the sides of the organic compound layer in a continuous process. In this specification, step breaks refer to the phenomenon in which a layer, film, or electrode is divided due to the shape of the surface to be formed (e.g., a step).

[0032] Furthermore, in addition to the above-mentioned steps, the manufacturing apparatus according to one embodiment of the present invention can continuously perform a film deposition step for forming a light-emitting device, a sealing step, and the like. Therefore, it is possible to form a fine, high-brightness, and highly reliable light-emitting device. Moreover, the apparatus can be arranged in an in-line configuration in the order of the light-emitting device processes, enabling high-throughput manufacturing.

[0033] Furthermore, a silicon wafer can be used as a support substrate for forming the light-emitting device. A silicon wafer with pre-formed drive circuits and pixel circuits can be used as a support substrate, and the light-emitting device can be formed on these circuits. Therefore, a narrow-bezel display device suitable for AR or VR can be formed. The silicon wafer is preferably φ8 inches or larger (for example, φ12 inches). However, the support substrate for forming the light-emitting device is not limited to the above. For example, glass, quartz, ceramic, sapphire, resin, metal, alloy, semiconductor (for example, GaAs), etc. can be used as a support substrate for forming the light-emitting device.

[0034] <Configuration Example 1> Figure 1 illustrates a manufacturing apparatus 10 for a light-emitting device according to one aspect of the present invention. The manufacturing apparatus 10 can perform the following steps in the manufacturing process of a light-emitting device: processing an organic compound film into island-shaped organic compound layers, forming a protective layer on the sides of the organic compound layers, and forming an organic insulating layer between the island-shaped organic compound layers. By performing these steps continuously, the sides of the organic compound layers can be sealed without exposure to the atmosphere, thereby forming a highly reliable light-emitting device.

[0035] In this specification, "island-like" refers to a state in which two or more layers made of the same material and formed in the same process are physically separated. For example, an island-like organic compound layer means a state in which the organic compound layer and an adjacent organic compound layer are physically separated.

[0036] The manufacturing apparatus 10 can be loaded with a substrate on which an organic compound film for forming the light-emitting layer of a light-emitting device, a first inorganic film provided on the organic compound film, a second inorganic film provided on the first inorganic film, and a resist mask for processing the first and second inorganic films into island-like structures. In other words, the chamber corresponding to the loading chamber of the manufacturing apparatus 10 can be connected to an apparatus for performing the preceding lithography process.

[0037] Furthermore, a substrate on which a third inorganic film covering the side surface of the island-shaped organic compound layer and an organic insulating layer have been formed can be unloaded from the chamber corresponding to the unloading chamber of the manufacturing apparatus 10. A film deposition apparatus for forming the organic compound layer and / or conductive layer (common electrode) to be provided on the upper surface of the organic compound layer can be connected to the chamber corresponding to the unloading chamber of the manufacturing apparatus 10.

[0038] The manufacturing apparatus 10 includes clusters C10, C11, and C12. In this specification, a group of devices that share conveying equipment, etc., is referred to as a cluster. Each cluster is connected via a buffer chamber. Examples of the configurations of clusters C10 and C11 are shown in Figure 1, and examples of the configuration of cluster C12 are shown in Figure 2A and subsequent figures. Cluster C10 has equipment that processes under reduced pressure. Cluster C11 has equipment that processes at normal pressure. Cluster C12 has equipment that processes under reduced pressure and equipment that processes at normal pressure. Alternatively, cluster C12 has equipment that processes at normal pressure.

[0039] In this embodiment, the types and numbers of rooms and equipment in the cluster are representative examples and not limiting. For example, a cluster may have two or more identical devices to improve throughput. Also, when forming a multilayer film, it may be formed using one film deposition apparatus or multiple film deposition apparatuses. For example, even if a cluster is exemplified by one film deposition apparatus, it may also have a configuration with multiple film deposition apparatuses. Furthermore, the multiple film deposition apparatuses may be of different types.

[0040] Furthermore, the processes in each cluster will be explained in detail in the example of a light-emitting device fabrication method and example of a manufacturing apparatus shown in Embodiment 2.

[0041] <Cluster C10> Cluster C10 is a group of devices for processing an organic compound film, a first inorganic film, and a second inorganic film into island-like structures, and covering the organic compound layer and the first inorganic film with a third inorganic film. Cluster C10 has a buffer room Ba, a buffer room Bb, a waiting room W, a transfer room TFa, and multiple processing rooms. A transport device AMa is provided in the transfer room TFa.

[0042] Here, buffer room Ba corresponds to the load room in cluster C10. Buffer room Bb corresponds to the unload room in cluster C10. Note that buffer room Bb is also a common element with cluster C11.

[0043] Buffer chamber Ba, buffer chamber Bb, waiting chamber W, and multiple processing chambers are each connected to transfer chamber TFa via gate valve 20.

[0044] The conveying device AMa can transfer a workpiece from any one of the buffer chambers Ba, buffer chamber Bb, waiting chamber W, or any of the other processing chambers.

[0045] During operation of the manufacturing equipment, buffer chambers Ba and Bb are controlled to either reduced pressure or atmospheric pressure. When controlled to atmospheric pressure, it is preferable to introduce an inert gas with a low dew point. In addition, the transfer chamber TFa, the waiting chamber W, and the multiple processing chambers are controlled to reduced pressure.

[0046] Each of the multiple processing chambers can be fitted with, for example, an etching apparatus Ea, etching apparatus Eb, etching apparatus Ec, a plasma processing apparatus CN, a film deposition apparatus D, etc. Furthermore, the workpiece to be fed into the manufacturing apparatus may have, for example, a laminate in which an organic compound film, a first inorganic film, a second inorganic film, and a resist mask are layered in that order.

[0047] The etching apparatus Ea can be a dry etching apparatus. The etching apparatus Ea can be used in the process of processing the first inorganic film and the second inorganic film into island-like structures.

[0048] The etching apparatus Eb can be a dry etching apparatus. The etching apparatus Eb can be used in a process to process an organic compound film into an island-shaped organic compound layer using island-shaped first inorganic film and second inorganic film as masks. The etching apparatus Eb may also be equipped with an ashing function. The ashing function can remove the resist mask.

[0049] The etching apparatus Ec can be a dry etching apparatus. The etching apparatus Ec can be used in the process of removing a second inorganic film used as a mask.

[0050] In the above example, etching apparatus Eb has an ashing function, but etching apparatus Ea or Ec may also have an ashing function. Also, in the above example, the elements processed by etching apparatuses Ea to Ec are separated, but all of the above processing may be performed continuously by etching apparatuses Ea to Ec.

[0051] The plasma processing apparatus CN, for example, has a pair of parallel plate electrodes and can generate plasma by applying a voltage to these electrodes in an inert gas atmosphere under reduced pressure. By irradiating a workpiece with the plasma generated from the inert gas, reaction products and adsorbed gases remaining on the surface of the workpiece can be removed. As the inert gas, for example, noble gases such as high-purity helium, argon, and neon, nitrogen, or mixtures thereof can be used.

[0052] Furthermore, it is preferable to perform a vacuum bake treatment within the apparatus either before or after the plasma treatment to remove surface-adsorbed water and other contaminants. The vacuum bake treatment is preferably performed within a temperature range that does not alter the organic compound layer, for example, 70°C to 120°C, more preferably 80°C to 100°C. The vacuum bake treatment may also be performed in the film deposition apparatus D before the next step of film deposition. Alternatively, the plasma treatment apparatus CN may be omitted.

[0053] The waiting room W can hold multiple workpieces. For example, when the film deposition apparatus D is a batch processing type, the throughput can be improved by having multiple workpieces wait in the waiting room W after processing in the etching apparatuses Ea to Ec and the plasma processing apparatus CN is completed. However, if the film deposition apparatus D is a single-wafer processing type, the waiting room W may not be provided.

[0054] Furthermore, multiple waiting rooms W may be provided. For example, a waiting room W may be provided for waiting for workpieces after batch processing is completed in the film deposition apparatus D. By removing all workpieces from the film deposition apparatus D, it is no longer necessary to keep workpieces waiting in the film deposition apparatus D, and the throughput of the film deposition apparatus D can be improved.

[0055] The film deposition apparatus D can be, for example, a vapor deposition apparatus, a sputtering apparatus, a CVD (Chemical Vapor Deposition) apparatus, or an ALD (Atomic Layer Deposition) apparatus. In particular, it is preferable to use an ALD apparatus, which has excellent coating properties. The film deposition apparatus D can form island-like organic compound layers and a third inorganic film (protective film) that covers the first inorganic film. The film deposition apparatus D can deposit not only a single layer, but also two or more layers of different types of films. Furthermore, the film deposition apparatus D is not limited to a batch processing type, but may also be a single-wafer processing type.

[0056] <Cluster C11> Cluster C11 is a group of devices for forming organic insulating layers between island-shaped organic compound layers. Cluster C11 has a buffer chamber Bb, a buffer chamber Bc, a transfer chamber TFb, and multiple processing chambers. A transport device AMb is provided in the transfer chamber TFb.

[0057] Here, buffer room Bb corresponds to the load room in cluster C11. Also, buffer room Bc corresponds to the unload room in cluster C11. Cluster C11 is connected to cluster C10 via buffer room Bb.

[0058] Buffer chamber Bb, buffer chamber Bc, and several processing chambers are each connected to transfer chamber TFb via gate valve 20.

[0059] The conveying device AMb can transfer a workpiece from any one of the buffer chambers Bb, buffer chamber Bc, or any of the multiple processing chambers to any one of the other.

[0060] During operation of the manufacturing equipment, the buffer chamber Bc is controlled to reduced pressure or atmospheric pressure. The transfer chamber TFb and the multiple processing chambers are also controlled to atmospheric pressure. However, the transfer chamber TFb and the multiple processing chambers may be controlled to a slightly negative or positive pressure, not necessarily atmospheric pressure. Furthermore, the atmospheric pressure may differ in each of the transfer chamber TFb and the multiple processing chambers.

[0061] The transfer chamber TFb and multiple processing chambers can be controlled to maintain an inert gas atmosphere. Nitrogen, or noble gases such as argon or helium, can be used as the inert gas. Furthermore, it is preferable that the inert gas has a low dew point (e.g., below -50°C). Performing the process in a low-dew-point inert gas atmosphere prevents the inclusion of impurities, enabling the formation of highly reliable light-emitting devices.

[0062] Each of the multiple processing chambers can be fitted with, for example, a coating device CT, a baking device HTa, an exposure device EXPa, a developing device Dev, an exposure device EXPb, a baking device HTb, and so on.

[0063] The coating apparatus CT can be used to coat the resin that will form the organic insulating layer using methods such as spin coating, dip coating, spray coating, inkjet, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, and knife coating. The resin can be a photosensitive resin, such as an ultraviolet-curable resin.

[0064] The HTa baking apparatus can be fitted with either a hot plate type or an oven type baking apparatus. The HTa baking apparatus can use the applied resin for pre-baking.

[0065] The exposure apparatus EXPa and the developing apparatus DEV can be adapted for use in photolithography processes. When using a positive-type photosensitive resin, the resin can be partially exposed with the exposure apparatus EXPa and then developed with the developing apparatus DEV to remove the resin from the exposed areas. In this process, a resin (organic insulating layer) can be formed between island-like organic compound layers.

[0066] The exposure apparatus EXPb can use the same exposure apparatus as the exposure apparatus EXPa. Alternatively, a lamp device emitting ultraviolet light with a simple configuration may be used. In the exposure apparatus EXPb, ultraviolet light is irradiated onto the resin remaining after the development process.

[0067] Because the organic compound layer has low heat resistance, it is preferable to keep the post-bake temperature of the resin as low as possible. Depending on the resin material, it may be possible to lower the post-bake temperature in the next step by exposing it to light to advance the curing reaction. Therefore, it may be preferable to perform the exposure process using an exposure device (EXPb). However, depending on the resin material used, the exposure process may be unnecessary, and the exposure device (EXPb) may be omitted.

[0068] The same baking apparatus as the baking apparatus HTa can be applied to the baking apparatus HTb. The baking apparatus HTb reflows and cures the resin (organic insulating layer) formed between island-shaped organic compound layers. At the stage after the development process described above, the sides of the resin are steep, and a roughly angular section is created between the top surface and the sides of the resin. By baking in the baking apparatus HTb, the resin is reflowed and the roughly angular section is deformed to have a curved surface. By deforming the resin in this way, the coverage of the conductive layer formed on multiple island-shaped organic compound layers can be improved, and step breaks can be prevented. This baking process is also called post-bake.

[0069] <Cluster C12> Cluster C12 is a group of devices for etching the first and third inorganic films remaining on the organic compound layer. Here, the first and third inorganic films are etched using the resin (organic insulating layer) formed in Cluster C11 as a mask. However, if the etching proceeds excessively, a cavity may be created beneath the resin. The appropriate process differs depending on the material and film thickness of the first and third inorganic films, so there are multiple device configurations that can be applied to Cluster C12. In the following description, the same reference numeral may be used for chambers or devices with the same configuration.

[0070] <Application Example 1> Figure 2A shows an example of application of the apparatus that can be applied to cluster C12. In Figure 2A, the configuration involves first dry etching the third inorganic film and then wet etching the first inorganic film on the organic compound layer.

[0071] The cluster C12 shown in Figure 2A includes cluster C12a and cluster C12b.

[0072] Cluster C12a is a group of equipment primarily for etching the third inorganic film. Cluster C12a includes a buffer chamber Bc, a buffer chamber Bd, a transfer chamber TFc, and an etching apparatus Ed. A transport apparatus AMc is provided in the transfer chamber TFc.

[0073] Here, buffer room Bc corresponds to the load room in cluster C12a. Also, buffer room Bd corresponds to the unload room in cluster C12a. Cluster C12a is connected to cluster C11 via buffer room Bc.

[0074] Buffer chamber Bc, buffer chamber Bd, and etching apparatus Ed are each connected to transfer chamber TFc via gate valve 20.

[0075] The transfer device AMc can transfer a workpiece from any one of the buffer chambers Bc, Bd, or etching device Ed to any one of the other.

[0076] During operation of the manufacturing equipment, the buffer chamber Bd is controlled to either reduced pressure or atmospheric pressure. When controlled to atmospheric pressure, it is preferable to introduce an inert gas with a low dew point. In addition, the transfer chamber TFc and the etching apparatus Ed are controlled to reduced pressure.

[0077] A dry etching apparatus can be applied to the etching apparatus Ed. The etching apparatus Ed can be mainly used in the process of etching a third inorganic film. Here, since the third inorganic film is etched using the organic insulating layer as a mask, it is preferable to perform anisotropic etching so as not to create voids beneath the organic insulating layer.

[0078] Cluster C12b is a group of equipment primarily for etching the first inorganic film. Cluster C12b includes buffer chamber Bd, buffer chamber Be, transfer chamber TFd, etching apparatus Ef, and bake apparatus HTc. Transfer apparatus AMd is provided in transfer chamber TFd.

[0079] Here, buffer room Bd corresponds to the load room in cluster C12b. Also, buffer room Be corresponds to the unload room in cluster C12b. Cluster C12b is connected to cluster C12a via buffer room Bd.

[0080] Buffer chamber Bd, buffer chamber Be, etching apparatus Ef, and bake apparatus HTc are each connected to transfer chamber TFd via gate valve 20.

[0081] The transfer device AMd can transfer a workpiece from any one of the buffer chambers Bd, Be, etching device Ef, and bake device HTc to any one of the other.

[0082] During operation of the manufacturing equipment, the buffer chamber Be is controlled to reduced pressure or atmospheric pressure. The transfer chamber TFd, etching apparatus Ef, and bake apparatus HTc are also controlled to atmospheric pressure. When controlling to atmospheric pressure, it is preferable to introduce an inert gas with a low dew point.

[0083] A wet etching apparatus can be applied to the etching apparatus Ef. The etching apparatus Ef can be mainly used for etching a first inorganic film. Here, the first inorganic film is provided in contact with an organic compound layer that is susceptible to plasma damage. Therefore, it is preferable to remove the first inorganic film by wet etching.

[0084] The HTc baking apparatus can be a hot plate type or an oven type baking apparatus. The HTc baking apparatus can be used to dry workpieces after the wet etching process.

[0085] <Application Example 2> Figure 2B shows an example of application of a group of devices that can be applied to cluster C12. Figure 2B shows a configuration in which both the first and third inorganic films remaining on the organic compound layer are wet-etched. By performing wet etching on both the first and third inorganic films, the device configuration can be simplified, throughput can be improved, and plasma damage to the organic compound layer can be completely eliminated.

[0086] The cluster C12 shown in Figure 2B contains cluster C12c.

[0087] Cluster C12c is a group of equipment primarily for etching the first and third inorganic films. Cluster C12c includes a buffer chamber Bc, a buffer chamber Be, a transfer chamber TFe, an etching apparatus Ef, and a bake apparatus HTc. A transport apparatus AMe is provided in the transfer chamber TFc.

[0088] Here, buffer room Bc corresponds to the load room in cluster C12c. Also, buffer room Be corresponds to the unload room in cluster C12c. Cluster C12c is connected to cluster C11 via buffer room Bc.

[0089] Buffer chamber Bc, buffer chamber Be, etching apparatus Ef, and bake apparatus HTc are each connected to transfer chamber TFe via gate valve 20.

[0090] The transfer device AMe can transfer a workpiece from any one of the buffer chambers Bd, Be, etching device Ef, and bake device HTc to any one of the other.

[0091] During operation of the manufacturing equipment, the buffer chamber Be is controlled to reduced pressure or atmospheric pressure. The transfer chamber TFe, etching apparatus Ef, and bake apparatus HTc are also controlled to atmospheric pressure. When controlling to atmospheric pressure, it is preferable to introduce an inert gas with a low dew point.

[0092] A wet etching apparatus can be applied to the etching apparatus Ef. The etching apparatus Ef can be used primarily for etching the first inorganic film and the third inorganic film.

[0093] The HTc baking apparatus can be a hot plate type or an oven type baking apparatus. The HTc baking apparatus can be used to dry workpieces after the wet etching process.

[0094] <Application Example 3> Figure 3 shows application example 3 of the apparatus that can be applied to cluster C12. In Figure 3, the configuration involves first dry etching the third inorganic film on the first inorganic film remaining on the organic compound layer, then ashing a portion of the organic insulating layer which acts as a mask, and finally wet etching the first inorganic film.

[0095] By ashing the organic insulating layer to recess its edges before wet etching the first inorganic film, the third inorganic film in the region overlapping with the organic insulating layer can be exposed. Subsequently, by wet etching the first inorganic film and the exposed third inorganic film using the organic insulating layer as a mask, it is possible to minimize the formation of voids beneath the organic insulating layer.

[0096] The cluster C12 shown in Figure 3 includes cluster C12d and cluster C12e.

[0097] Cluster C12d is a group of equipment primarily used for etching the third inorganic film and ashing the organic insulating layer. Cluster C12d includes buffer chamber Bc, buffer chamber Bd, transfer chamber TFf, etching apparatus Ed, and etching apparatus Eg. Transfer apparatus AMf is provided in transfer chamber TFf.

[0098] Here, buffer room Bc corresponds to the load room in cluster C12d. Also, buffer room Bd corresponds to the unload room in cluster C12d. Cluster C12d is connected to cluster C11 via buffer room Bc.

[0099] Buffer chamber Bc, buffer chamber Bd, etching apparatus Ed, and etching apparatus Eg are each connected to transfer chamber TFf via gate valve 20.

[0100] The transfer device AMf can transfer a workpiece from any one of the buffer chambers Bc, Bd, etching device Ed, or etching device Eg to any one of the other.

[0101] During operation of the manufacturing equipment, the buffer chamber Bd is controlled to either reduced pressure or atmospheric pressure. When controlled to atmospheric pressure, it is preferable to introduce an inert gas with a low dew point. In addition, the transfer chamber TFf, etching apparatus Ed, and etching apparatus Eg are controlled to reduced pressure.

[0102] A dry etching apparatus can be applied to the etching apparatus Ed. The etching apparatus Ed can be mainly used in the process of etching a third inorganic film. Here, since the third inorganic film is etched using the organic insulating layer as a mask, it is preferable to perform anisotropic etching so as not to create voids beneath the organic insulating layer.

[0103] The etching apparatus Eg can be a dry etching apparatus or an ashing apparatus that has an ashing function. The etching apparatus Eg can be used mainly for the process of recessing the edges of the organic insulating layer that serves as a mask when etching the first inorganic film and the third inorganic film.

[0104] Although the above example illustrates a configuration in which etching apparatus Ed and etching apparatus Eg are provided separately, the etching apparatus Eg may perform a continuous process of dry etching and ashing. In this case, etching apparatus Ed can be omitted.

[0105] Cluster C12e is a group of equipment primarily for etching the first inorganic film. Cluster C12e includes buffer chamber Bd, buffer chamber Be, transfer chamber TFg, etching apparatus Ef, and bake apparatus HTc. Transfer apparatus AMg is provided in transfer chamber TFg.

[0106] Here, buffer room Bd corresponds to the load room in cluster C12e. Also, buffer room Be corresponds to the unload room in cluster C12e. Cluster C12e is connected to cluster C12d via buffer room Bd.

[0107] Buffer chamber Bd, buffer chamber Be, etching apparatus Ef, and bake apparatus HTc are each connected to transfer chamber TFg via gate valve 20.

[0108] The transfer device AMg can transfer a workpiece from any one of the buffer chambers Bd, Be, Etching device Ef, and bake device HTc to any one of the other.

[0109] During operation of the manufacturing equipment, the buffer chamber Be is controlled to reduced pressure or atmospheric pressure. The transfer chamber TFg, etching apparatus Ef, and bake apparatus HTc are also controlled to atmospheric pressure. When controlling to atmospheric pressure, it is preferable to introduce an inert gas with a low dew point.

[0110] A wet etching apparatus can be applied to the etching apparatus Ef. The etching apparatus Ef can be used primarily for etching the first inorganic film.

[0111] The HTc baking apparatus can be a hot plate type or an oven type baking apparatus. The HTc baking apparatus can be used to dry workpieces after the wet etching process.

[0112] <Application Example 4> Figure 4 shows an application example 4 of the apparatus that can be applied to cluster C12. In Figure 4, the configuration involves first wet etching the third inorganic film, then ashing a portion of the organic insulating layer which acts as a mask, and finally wet etching the first inorganic film, which is the third inorganic film remaining on the organic compound layer.

[0113] By ashing the organic insulating layer and recessing its edges before wet etching the first inorganic film, it is possible to reduce the likelihood of voids forming beneath the organic insulating layer. The apparatus configuration differs from that of Application Example 3 because the third inorganic film is wet-etched.

[0114] The cluster C12 shown in Figure 4 includes clusters C12f, C12g, and C12h.

[0115] Cluster C12f is a group of equipment primarily used for etching the third inorganic film. Cluster C12f includes buffer chamber Bc, buffer chamber Bd, transfer chamber TFh, etching apparatus Ef, and bake apparatus HTc. Transfer apparatus AMh is installed in transfer chamber TFh.

[0116] Here, buffer room Bc corresponds to the load room in cluster C12f. Similarly, buffer room Bd corresponds to the unload room in cluster C12f. Cluster C12f is connected to cluster C11 via buffer room Bc.

[0117] Buffer chamber Bc, buffer chamber Bd, etching apparatus Ef, and bake apparatus HTc are each connected to transfer chamber TFh via gate valve 20.

[0118] The transfer device AMh can transfer a workpiece from any one of the buffer chambers Bc, Bd, etching device Ef, and bake device HTc to any one of the other.

[0119] During operation of the manufacturing equipment, the buffer chamber Bd is controlled to either reduced pressure or atmospheric pressure. The transfer chamber TFh, etching apparatus Ef, and bake apparatus HTc are also controlled to atmospheric pressure. When controlling to atmospheric pressure, it is preferable to introduce an inert gas with a low dew point.

[0120] A wet etching system can be applied to the etching apparatus Ef. The etching apparatus Ef can be used primarily for etching a third inorganic film.

[0121] The HTc baking apparatus can be a hot plate type or an oven type baking apparatus. The HTc baking apparatus can be used to dry workpieces after the wet etching process.

[0122] Cluster C12g is a group of equipment primarily used for ashing organic insulating layers. Cluster C12g includes buffer chamber Bd, buffer chamber Be, transfer chamber TFi, and etching equipment Eg. Transfer equipment AMi is installed in transfer chamber TFi.

[0123] Here, buffer room Bd corresponds to the load room in cluster C12g. Also, buffer room Be corresponds to the unload room in cluster C12g. Cluster C12g is connected to cluster C12f via buffer room Bd.

[0124] Buffer chamber Bd, buffer chamber Be, and etching apparatus Eg are each connected to transfer chamber TFi via gate valve 20.

[0125] The transfer device AMi can transfer a workpiece from any one of the buffer chambers Bd, Be, and Eg to any one of the other.

[0126] During operation of the manufacturing equipment, the buffer chamber Be is controlled to either reduced pressure or atmospheric pressure. When controlled to atmospheric pressure, it is preferable to introduce an inert gas with a low dew point. In addition, the transfer chamber TFi and etching apparatus Eg are controlled to reduced pressure.

[0127] The etching apparatus Eg can be a dry etching apparatus with an ashing function, or an ashing apparatus. The etching apparatus Eg can be used primarily for the process of recessing the edges of the organic insulating layer that serves as a mask.

[0128] Cluster C12h is a group of equipment primarily for etching the first inorganic film. Cluster C12h includes buffer chamber Be, buffer chamber Bf, transfer chamber TFj, etching apparatus Eh, and bake apparatus HTd. Transfer chamber TFj is equipped with a transport apparatus AMj.

[0129] Here, buffer room Be corresponds to the load room in cluster C12h. Buffer room Bf corresponds to the unload room in cluster C12h. Cluster C12h is connected to cluster C12g via buffer room Be.

[0130] Buffer chamber Be, buffer chamber Bf, etching apparatus Eh, and bake apparatus HTd are each connected to transfer chamber TFg via gate valve 20.

[0131] The transfer device AMj can transfer a workpiece from any one of the buffer chambers Be, Bf, etching device Eh, and bake device HTd to any one of the other.

[0132] During operation of the manufacturing equipment, the buffer chamber Bf is controlled to reduced pressure or atmospheric pressure. The transfer chamber TFj, etching apparatus Eh, and bake apparatus HTd are also controlled to atmospheric pressure. When controlling to atmospheric pressure, it is preferable to introduce an inert gas with a low dew point.

[0133] A wet etching apparatus can be applied to the etching apparatus Eh. The etching apparatus Eh can be used primarily for the process of etching a first inorganic film.

[0134] The HTc baking apparatus can be a hot plate type or an oven type baking apparatus. The HTc baking apparatus can be used to dry workpieces after the wet etching process.

[0135] In addition, in the application examples 1 to 4 of cluster C12 described above, the first inorganic film and the third inorganic film may be formed from the same material. Furthermore, even if the first inorganic film and the third inorganic film are formed from different materials, the etching selectivity ratio may not differ significantly. Therefore, when the first inorganic film is etched, a portion of the third inorganic film may also be etched. Alternatively, it is possible to intentionally etch a portion of the third inorganic film when the first inorganic film is etched.

[0136] <Configuration Example 2> Figure 5 is a block diagram illustrating a manufacturing apparatus for a light-emitting device according to one aspect of the present invention. The manufacturing apparatus has a plurality of clusters arranged in process order, and a part of it is the manufacturing apparatus 10 (clusters C10 to C12) described in the above-mentioned Configuration Example 1. The substrate on which the light-emitting device is formed moves sequentially between the plurality of clusters to undergo each process.

[0137] The manufacturing apparatus shown in Figure 3 is an example having clusters C1 to C13. Clusters C1 to C13 are connected sequentially via buffer chambers, and a workpiece 60a fed into cluster C1 can be removed from cluster C13 as a workpiece 60b with a light-emitting device formed on it. Other clusters can also be connected before and after clusters C1 to C13.

[0138] Here, clusters C1, C3, C6, C9, C11, and C12 contain equipment for performing processes under controlled atmosphere. Clusters C2, C4, C5, C7, C8, C10, and C13 contain equipment for performing vacuum processes (reduced pressure processes).

[0139] Cluster C1 mainly contains equipment for cleaning and baking workpieces. Clusters C2, C5, and C8 mainly contain equipment for forming organic compounds for light-emitting devices. Clusters C3, C6, and C9 mainly contain equipment for performing lithography processes. Clusters C4, C7, and C12 mainly contain equipment for performing etching and ashing processes. Cluster C13 mainly contains equipment for forming organic compounds for light-emitting devices and equipment for forming protective films to seal light-emitting devices. Clusters C10 to C12 contain the equipment described in Configuration Example 1.

[0140] Next, we will describe the details of clusters C1 to C9 and cluster C13. Note that the buffer chamber, transfer chamber, and transport device will be described using common reference numerals.

[0141] <Cluster C1> Figure 6A is a top view illustrating the equipment configuration applicable to cluster C1. Cluster C1 is a group of equipment for performing the cleaning process. Cluster C1 includes a buffer chamber B1 corresponding to a loading chamber, a buffer chamber B2 corresponding to an unloading chamber, a transfer chamber TF, and multiple atmospheric pressure process devices A. A conveying device AM is provided in the transfer chamber TF.

[0142] Buffer chamber B1, buffer chamber B2, and multiple atmospheric pressure process units A are each connected to the transfer chamber TF via gate valves 20.

[0143] The transfer device AM can transfer a workpiece from any one of buffer chamber B1, buffer chamber B2, or any of the multiple atmospheric pressure process devices A to any one of the others.

[0144] During operation of the manufacturing equipment, buffer chambers B1 and B2 are controlled to reduced pressure or atmospheric pressure. Similarly, the transfer chamber TF and the multiple atmospheric pressure process units A are controlled to atmospheric pressure. When controlling to atmospheric pressure, it is preferable to introduce an inert gas with a low dew point.

[0145] A valve for introducing inert gas (IG) is connected to cluster C1 (see Figure 5), allowing the atmosphere to be controlled to an inert gas environment. Nitrogen, or noble gases such as argon or helium can be used as the inert gas. Furthermore, it is preferable that the inert gas has a low dew point (e.g., below -50°C). Performing the process in a low-dew-point inert gas atmosphere prevents the inclusion of impurities, enabling the formation of highly reliable light-emitting devices.

[0146] The atmospheric pressure process apparatus A in cluster C1 can be fitted with a cleaning apparatus, a baking apparatus, and the like. For example, a spin cleaning apparatus, a batch cleaning apparatus, a hot plate type or oven type baking apparatus, etc., can be fitted. The baking apparatus may also be a vacuum baking apparatus.

[0147] Note that Figure 6A shows an example where cluster C1 has two atmospheric pressure process units A (atmospheric pressure process units A1 and A2), but it may have three or more atmospheric pressure process units A to improve throughput.

[0148] <Clusters C2, C5, C8> Figure 6B is a top view illustrating the apparatus configuration applicable to clusters C2, C5, and C8. Clusters C2, C5, and C8 are groups of apparatus primarily for forming organic compounds into thin films. Clusters C2, C5, and C8 include a buffer chamber B1 corresponding to a loading chamber, a buffer chamber B2 corresponding to an unloading chamber, a transfer chamber TF, and multiple vacuum process devices V. A transport device AM is provided in the transfer chamber TF.

[0149] Buffer chamber B1, buffer chamber B2, and multiple vacuum process devices V are each connected to the transfer chamber TF via gate valves 20.

[0150] The transfer device AM can transfer a workpiece from any one of buffer chamber B1, buffer chamber B2, or any of the multiple vacuum process devices V to any one of the others.

[0151] During operation of the manufacturing equipment, buffer chambers B1 and B2 are controlled to either reduced pressure or atmospheric pressure. When controlled to atmospheric pressure, it is preferable to introduce an inert gas with a low dew point. In addition, the transfer chamber TF and the multiple vacuum process devices V are controlled to reduced pressure.

[0152] Vacuum pumps VP are connected to clusters C2, C5, and C8 (see Figure 5), and gate valves 20 are provided between each cluster and the transfer chamber TF. Therefore, different processes can be performed in parallel in each vacuum process apparatus V.

[0153] Furthermore, a vacuum process refers to processing in a controlled environment under reduced pressure. Therefore, vacuum processes include not only processing under high vacuum but also processes that involve introducing a process gas and controlling the pressure under reduced pressure.

[0154] The vacuum process apparatus V in clusters C2, C5, and C8 can be fitted with, for example, film deposition equipment such as a vapor deposition apparatus, sputtering apparatus, CVD apparatus, or ALD apparatus. It may also have a surface treatment apparatus.

[0155] The surface treatment apparatus can have the same configuration as the plasma treatment apparatus CN described above and can perform surface treatment processes. The surface condition (such as wettability) of the workpiece may change due to the previous process. If the next process for the workpiece is the deposition of an organic compound film, defects such as peeling may occur if the surface of the workpiece is not in an appropriate condition. Therefore, it is preferable to improve the surface condition of the workpiece by plasma treatment using a halogen-containing gas with the surface treatment apparatus.

[0156] For example, if the surface to be coated is an oxide, the oxide surface may become hydrophilic in the preceding process. In this case, the surface can be made hydrophobic by replacing the hydrophilic groups on the surface of the coated surface with fluorine or fluoroalkyl groups using plasma treatment with a fluorine-based gas, thereby preventing peeling defects. Examples of fluorine-based gases that can be used include fluorocarbons such as CF4, C2F6, C4F6, C4F8, and CHF3, as well as SF6 and NF3. Helium, argon, or hydrogen may also be added to these gases.

[0157] Alternatively, a coating apparatus may be used as the surface treatment apparatus S. For example, methods such as spin coating, dip coating, or spray coating, or a method of exposing the workpiece to an atmosphere of coating agent can be used. For the coating agent, a silane coupling agent such as HMDS (Hexamethyldisilazane) can be used to hydrophobize the surface of the workpiece. However, since the coating apparatus is an atmospheric pressure process, it is preferable to provide a cluster with a separate coating apparatus.

[0158] For CVD (Chemical Vapor Deposition) equipment, thermal CVD equipment utilizing heat or PECVD (Plasma Enhanced CVD) equipment utilizing plasma can be used. Similarly, for ALD (Advanced Laser Development) equipment, thermal ALD equipment utilizing heat or PEALD (Plasma Enhanced ALD) equipment utilizing plasma-excited reactant can be used.

[0159] In Figure 6B, clusters C2, C5, and C8 are shown as having six atmospheric pressure process units A (vacuum process units V1 to V6). However, to improve throughput or prevent contamination, there may be seven or more vacuum process units V. Furthermore, each of clusters C2, C5, and C8 may be configured to have multiple clusters.

[0160] <Clusters C3, C6, C9> Figure 7A is a top view illustrating the equipment configuration applicable to clusters C3, C6, and C9. Clusters C3, C6, and C9 are primarily equipment groups for performing lithography processes. Clusters C2, C5, and C8 have a buffer chamber B1 corresponding to a load chamber, a buffer chamber B2 corresponding to an unload chamber, a transfer chamber TF, and multiple atmospheric pressure process devices A. A conveying device AM is provided in the transfer chamber TF.

[0161] Buffer chamber B1, buffer chamber B2, and multiple atmospheric pressure process units A are each connected to the transfer chamber TF via gate valves 20.

[0162] The transfer device AM can transfer a workpiece from any one of buffer chamber B1, buffer chamber B2, or any of the multiple atmospheric pressure process devices A to any one of the others.

[0163] During operation of the manufacturing equipment, buffer chambers B1 and B2 are controlled to reduced pressure or atmospheric pressure. Similarly, the transfer chamber TF and the multiple atmospheric pressure process units A are controlled to atmospheric pressure. When controlling to atmospheric pressure, it is preferable to introduce an inert gas with a low dew point.

[0164] Valves for introducing inert gas (IG) are connected to clusters C3, C6, and C9 (see Figure 5), allowing the atmosphere to be controlled to an inert gas environment.

[0165] The atmospheric pressure process apparatus A in clusters C3, C6, and C9 can be fitted with equipment for performing lithography processes. For example, when performing a photolithography process, a resin (photoresist) coating apparatus, exposure apparatus, developing apparatus, baking apparatus, etc., can be applied. When performing a nanoimprint lithography process, a resin (UV-curing resin, etc.) coating apparatus, nanoimprint apparatus, etc., can be applied. In addition, depending on the application, a cleaning apparatus, wet etching apparatus, coating apparatus, resist stripping apparatus, etc., may be applied to the atmospheric pressure process apparatus A.

[0166] In Figure 7A, clusters C3, C6, and C9 are shown as having six atmospheric pressure process units A (atmospheric pressure process units A1 to A6). However, to improve throughput or prevent contamination, they may have seven or more atmospheric pressure process units A. Furthermore, each of clusters C3, C6, and C9 may be configured to have multiple clusters.

[0167] <Clusters C4, C7> Figure 7B is a top view illustrating the equipment configuration applicable to clusters C4 and C7. Clusters C4 and C7 are groups of equipment primarily for etching organic compounds and removing resist masks. Clusters C4 and C7 include a buffer chamber B1 corresponding to a loading chamber, a buffer chamber B2 corresponding to an unloading chamber, a transfer chamber TF, and multiple vacuum process devices V. A transport device AM is provided in the transfer chamber TF.

[0168] Buffer chamber B1, buffer chamber B2, and multiple vacuum process devices V are each connected to the transfer chamber TF via gate valves 20.

[0169] The transfer device AM can transfer a workpiece from any one of buffer chamber B1, buffer chamber B2, or any of the multiple vacuum process devices V to any one of the others.

[0170] During operation of the manufacturing equipment, buffer chambers B1 and B2 are controlled to either reduced pressure or atmospheric pressure. When controlled to atmospheric pressure, it is preferable to introduce an inert gas with a low dew point. In addition, the transfer chamber TF and the multiple vacuum process devices V are controlled to reduced pressure.

[0171] Vacuum pumps VP are connected to clusters C4 and C7 (see Figure 5), and gate valves 20 are provided between them and the transfer chamber TF. Therefore, different processes can be performed in parallel in each vacuum process apparatus V.

[0172] For example, a dry etching apparatus can be applied to the vacuum process apparatus V in clusters C4 and C7. Alternatively, a dry etching apparatus equipped with an ashing function may be applied. The ashing function can remove the resist mask.

[0173] In Figure 7B, clusters C4 and C7 are shown as having two vacuum process units V (vacuum process units V7 to V8), but they may have three or more vacuum process units V to improve throughput or prevent contamination.

[0174] <Cluster C13> Figure 8 is a top view illustrating the apparatus configuration applicable to cluster C13. Cluster C13 is a group of apparatus mainly for depositing organic compounds, conductive films, and protective films. Cluster C13 includes a buffer chamber B1 corresponding to a loading chamber, a buffer chamber B2 corresponding to an unloading chamber, a transfer chamber TF, and multiple vacuum process devices V. A transport device AM is provided in the transfer chamber TF.

[0175] Buffer chamber B1, buffer chamber B2, and multiple vacuum process devices V are each connected to the transfer chamber TF via gate valves 20.

[0176] The transfer device AM can transfer a workpiece from any one of buffer chamber B1, buffer chamber B2, or any of the multiple vacuum process devices V to any one of the others.

[0177] During operation of the manufacturing equipment, buffer chamber B1 is controlled to a reduced pressure. Buffer chamber B2 is controlled to either a reduced pressure or atmospheric pressure. When controlled to atmospheric pressure, it is preferable to introduce an inert gas with a low dew point. In addition, the transfer chamber TF and the multiple vacuum process devices V are controlled to a reduced pressure.

[0178] A vacuum pump VP is connected to cluster C13 (see Figure 5), and gate valves 20 are provided between it and the transfer chamber TF. Therefore, different processes can be performed in parallel in each vacuum process apparatus V.

[0179] The vacuum process apparatus V in cluster C13 can be fitted with, for example, thin-film deposition equipment such as a vapor deposition apparatus, sputtering apparatus, CVD apparatus, and ALD apparatus.

[0180] Although Figure 8 shows an example where cluster C13 has three vacuum process devices V (vacuum process devices V9 to V11), it may have four or more vacuum process devices V to improve throughput or prevent contamination.

[0181] By using a manufacturing apparatus with the above configuration, a highly reliable light-emitting device sealed with a protective film can be formed without exposure to the atmosphere during the manufacturing process.

[0182] For example, after cleaning the workpiece in cluster C1, a light-emitting device emitting a first color of light is formed in clusters C2 to C4. Next, a light-emitting device emitting a second color of light is formed in clusters C5 to C7. Then, a light-emitting device emitting a third color of light and a protective layer are formed in clusters C8 to C10. Next, an organic insulating layer is filled in cluster C11. Next, unwanted elements are removed in cluster C12. Then, the process can be carried out continuously under reduced pressure or in an apparatus with a controlled atmosphere until a conductive film and protective film are formed in cluster C13. Details of these processes will be described later.

[0183] Furthermore, when forming a light-emitting device that emits white light and a light-emitting device that emits first to third colors of light using a colored layer such as a color filter, a configuration in which clusters C1, C8, C9, C10, C11, C12, and C13 are connected in order, as shown in Figure 9, and an organic compound layer that emits white light can be formed in clusters C8 to C10.

[0184] <Configuration Example 3> Configuration Examples 1 and 2 show examples of in-line manufacturing equipment where each cluster is connected via a buffer chamber. However, each cluster may also have its own independent load chamber (LD) and unload chamber (ULD).

[0185] In this configuration, to prevent the workpiece from being exposed to the atmosphere, the workpiece can be sealed in an atmosphere-controlled container and the container can be moved between clusters.

[0186] Figure 10A is a schematic diagram of Configuration Example 1 and Configuration Example 2, showing an example in which cluster C2 is connected to cluster C3 via buffer chamber B. The workpiece 60 is processed in cluster C2 and then transported to cluster C3 via buffer chamber B.

[0187] Figure 10B is a schematic diagram of Configuration Example 3, showing an example in which a load chamber LD and an unload chamber ULD are provided in each cluster, Cluster C2 and Cluster C3. The workpiece 60 is placed in a cassette CS in the unload chamber ULD of Cluster C2, and the cassette CS is placed in an atmosphere-controlled transport container BX and moved between clusters. Then the cassette CS is transported to the load chamber LD of Cluster C3. During this time, the cassette CS is transferred to the transport container BX or cluster so as not to be exposed to the atmosphere.

[0188] Figure 11A illustrates the unloading of cassette CS in cluster C2. For clarity, the gate valve has been omitted, and the diagram shows the view through the chamber wall of the unloading chamber ULD.

[0189] First, with all workpieces stored in the cassette CS installed in the unloading chamber ULD, the atmosphere in the unloading chamber ULD is replaced with an inert gas atmosphere. Also, the inside of the transport container BX, located on the transport vehicle VE, is replaced with an inert gas atmosphere. At this time, it is preferable to maintain a positive pressure state in both the unloading chamber ULD and the transport container BX to prevent the inflow of air. However, the transport container BX only needs to be configured to prevent the inflow of air; it may also be evacuated to a negative pressure state.

[0190] Next, the outlet of the unloading chamber ULD and the inlet / outlet of the transport container BX are docked together, and the cassette CS is transferred from the unloading chamber ULD to the transport container BX using the transfer device 200. Then, the inlet / outlet of the transport container BX is closed to maintain an inert gas atmosphere inside the transport container BX, and the transport vehicle VE moves to cluster C2.

[0191] Figure 11B illustrates the loading of cassette CS into cluster C3. For clarity, the diagram shows the walls of the transport container BX transparently.

[0192] First, the atmosphere in the loading chamber LD is replaced with an inert gas atmosphere. Next, the inlet of the loading chamber LD and the outlet of the transport container BX are docked together, and the cassette CS is transferred from the transport container BX to the loading chamber LD using the transfer device 209. Then, the inlet of the loading chamber UL is closed, and processing in cluster C2 begins.

[0193] Figure 11C illustrates the transport container BX and the transport vehicle VE. The transport vehicle VE contains a controller 201, a power source 202, a battery 203, a gas cylinder 205 filled with inert gas, etc. The power source 202 is connected to the battery 203 and the wheels 204. The transport vehicle VE can be moved manually or automatically under the control of the controller 201.

[0194] The transport container BX has a gas inlet 210 and an outlet 211. The inlet 210 is connected to a gas cylinder 205 via a valve 206. The outlet 211 is connected to a valve 207. One or both of valves 206 and 207 are conductance valves, which can control the pressure inside the transport container BX to a positive pressure with an inert gas. It is preferable to use nitrogen or argon as the inert gas.

[0195] Furthermore, the transport container BX has an outlet 208 and a transfer device 209. The form of the outlet 208 is not limited, and for example, a door type, a shutter type, etc., can be used.

[0196] The transfer device 209 can transfer the cassette CS. In the explanation of Figures 11A and 11B, the transfer device 200 of the unloading chamber ULD is used for unloading to the transport container BX, and the transfer device 209 of the transport container BX is used for loading to the loading chamber LD. However, either the transfer device 200 or the transfer device 209 may be used to perform these operations. Furthermore, the system may be configured so that neither the transfer device 200 nor the transfer device 209 is provided.

[0197] Although clusters C2 and C3 were used as examples above, the configuration of making each cluster independent can also be applied to other clusters.

[0198] <Vacuum Processing Equipment V> Figure 12A illustrates an example of a vacuum process apparatus V, illustrating a film deposition apparatus 30 in which the substrate (workpiece) is placed face down. For clarity, the diagram shows the chamber wall as if it were transparent, and the gate valve has been omitted.

[0199] The film deposition apparatus 30 includes a film deposition material supply unit 31, a mask jig 32, and a substrate alignment unit 33. The film deposition material supply unit 31 is the part where the deposition source is installed if the film deposition apparatus 30 is a vapor deposition apparatus. If the film deposition apparatus 30 is a sputtering apparatus, it is the part where the target (cathode) is installed.

[0200] As shown in Figure 12B, the substrate 61 can be loaded into the substrate alignment section 33 in an inverted state by the transport device 71. A mask jig 32 is installed below the substrate alignment section 33. Circuits and the like are pre-formed on the surface of the substrate 61, and the substrate 61 is brought into close contact with the mask jig 32 to prevent film deposition in unwanted areas. At this time, the substrate alignment section 33 adjusts the position between the area on the substrate 61 where film deposition is required and the opening 35 of the mask jig 32.

[0201] Since structures such as light-emitting devices are formed in the opening 35, the opening 35 can be adjusted according to the purpose. For example, the size of the opening 35 can be determined according to the size of the exposure area, as described below.

[0202] Figures 13A to 13C show an example of the number of display devices per substrate (e.g., silicon wafer) with a diameter of φ = 12 inches. In Figures 13A to 13C, the estimate assumes that the external connection terminals are routed from the back surface using through electrodes. This allows for a larger display area. Alternatively, pads may be provided within the exposure area. In this case, the display area will be smaller, but the manufacturing cost associated with routing the external connection terminals can be reduced.

[0203] Figures 13A to 13C show examples where the aspect ratio of the display area is set to 4:3.

[0204] Figure 13A shows an example of providing a sealing area inside the exposure area (32mm x 24mm) of the exposure apparatus. In the example in Figure 13A, the width of the sealing area is 1.5mm in the vertical direction and 2.0mm in the horizontal direction. In this case, the size of the display area is 28mm x 21mm (aspect ratio 4:3) and the diagonal is approximately 1.38 inches. The number of display devices per substrate is 72. If the width of the sealing area is 2.0mm in the vertical direction and 2.65mm in the horizontal direction, the size of the display area will be 26.7mm x 20mm (aspect ratio 4:3) and the diagonal will be approximately 1.32 inches. If the width of the sealing area is 3.0mm in the vertical direction and 4.0mm in the horizontal direction, the size of the display area will be 24mm x 18mm (aspect ratio 4:3) and the diagonal will be approximately 1.18 inches. In both cases, the number of display devices per circuit board is 72.

[0205] Figures 13B and 13C show examples where a sealing area is provided outside the exposure area (32 mm x 24 mm) of the exposure apparatus. In this case, exposure is performed with a gap equal to the size of the sealing area. A marker area is provided inside the exposure area. Figure 13B shows an example where the width of the marker area is 0.5 mm in the vertical direction and 0.7 mm in the horizontal direction, and the width of the sealing area is 2.0 mm. In this case, the size of the display area of ​​the display device is approximately 1.51 inches diagonally. The number of display devices per substrate is 56. Note that if the width of the marker area is 1.0 mm in the vertical direction and 1.3 mm in the horizontal direction, the size of the display area will be approximately 1.45 inches diagonally. Figure 13C shows an example where the width of the marker area is 1.0 mm in the vertical direction and 1.3 mm in the horizontal direction, and the width of the sealing area is 3.0 mm. In this case, the size of the display area of ​​the display device is approximately 1.45 inches diagonally. The number of display devices per circuit board is 49, which is about 13% less than the configuration shown in Figure 13B.

[0206] Figures 14A to 14F show examples of the configuration of a film deposition apparatus applicable to the vacuum process apparatus V. Figure 14A is a vacuum deposition apparatus, which has a substrate holder 51 for placing the workpiece substrate 61, a deposition source 52 such as a crucible, and a shutter 53. The exhaust port 54 is connected to a vacuum pump. Film deposition can be performed by heating the deposition source under reduced pressure to evaporate or sublimate the film deposition material, and then opening the shutter.

[0207] Figure 14B shows a sputtering apparatus, which has an upper electrode 58 on which the substrate 61 is placed, a lower electrode 56 on which the target 57 is placed, and a shutter 53. The gas inlet 55 is connected to a sputtering gas supply source, and the exhaust port 54 is connected to a vacuum pump. For example, by applying DC power or RF power between the upper electrode 58 and the lower electrode 56 under reduced pressure containing a noble gas, the sputtering phenomenon occurs, and by opening the shutter, the material for the target 57 can be deposited on the surface of the substrate 61.

[0208] Figure 14C shows a plasma CVD apparatus, which has an upper electrode 58 with a gas inlet 55 and a shower plate 59, and a lower electrode 56 on which a substrate 61 is placed. The gas inlet 55 is connected to a source of raw material gas, and the exhaust port 54 is connected to a vacuum pump. By introducing raw material gas under reduced pressure and applying high-frequency power or the like between the upper electrode 58 and the lower electrode 56, the raw material gas can be decomposed, and the target material can be deposited on the surface of the substrate 61.

[0209] Figure 14D shows a dry etching apparatus, which has an upper electrode 58 and a lower electrode 56 on which a substrate 61 is placed. The gas inlet 55 is connected to an etching gas supply source, and the exhaust port 54 is connected to a vacuum pump. By introducing etching gas under reduced pressure and applying high-frequency power or the like between the upper electrode 58 and the lower electrode 56, the etching gas is activated, and an inorganic or organic film formed on the substrate 61 can be etched. Ashing apparatuses and plasma processing apparatuses can also be configured similarly.

[0210] Figure 14E shows a waiting room, which has a substrate holder 62 for housing multiple substrates 61. The exhaust port 54 is connected to a vacuum pump, and the substrates 61 are kept under reduced pressure. The number of substrates 61 that can be stored in the substrate holder 62 can be appropriately determined considering the processing time before and after each step.

[0211] Figure 14F shows an ALD apparatus, which illustrates a batch-type configuration. The ALD apparatus has a heater 64, a gas inlet 55 connected to a supply source such as a precursor, and an exhaust port 54 connected to a vacuum pump. Multiple substrates 61 are placed in a substrate holder 63 and mounted on the heater 64. Under reduced pressure, a precursor or oxidizer is alternately introduced through the gas inlet 55, allowing for repeated film deposition on the substrates 61 at the atomic layer level. In the case of a single-wafer system, the substrate holder 63 can be omitted. A thermal CVD apparatus can also be configured similarly.

[0212] Figure 14G shows a batch-type ALD apparatus with a different configuration from Figure 14F. The basic configuration is the same, but it differs in that the substrates 61 are arranged on the heater 64 and the substrate holder 63 is not used. Alternatively, the gas inlet 55 may be provided directly above the substrates 61, and a rotating mechanism or the like may be provided on the heater 64 so that the substrates 61 pass directly below the gas inlet 55. The rotating mechanism of the heater 64 will cause the substrates 61 to be replaced, allowing for the processing of multiple substrates.

[0213] Although Figure 14G illustrates a configuration in which four substrates 61 are installed on the heater 64, two or one substrate may also be used. Furthermore, in the apparatus shown in Figures 14A to 14D, a batch-type configuration in which the substrates 61 are installed in a row, as shown in Figure 14G, may also be used.

[0214] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments.

[0215] (Embodiment 2) This embodiment describes a specific example of an organic EL element that can be manufactured using a manufacturing apparatus for a light-emitting device according to one aspect of the present invention.

[0216] In this specification, devices fabricated using a metal mask or FMM (Fine Metal Mask, a high-resolution metal mask) may be referred to as MM (Metal Mask) structured devices. In addition, in this specification, devices fabricated without using a metal mask or FMM may be referred to as MML (Metal Maskless) structured devices.

[0217] In this specification, a structure in which different light-emitting layers are created or painted for each color of light-emitting device (here, blue (B), green (G), and red (R)) may be referred to as an SBS (Side By Side) structure. Also, in this specification, a light-emitting device capable of emitting white light may be referred to as a white light-emitting device. A white light-emitting device can be combined with a colored layer (for example, a color filter) to realize a full-color display device.

[0218] Furthermore, light-emitting devices can be broadly classified into single structures and tandem structures. A single-structure device has one light-emitting unit between a pair of electrodes, and it is preferable that the light-emitting unit includes one or more light-emitting layers. When obtaining white light emission using two light-emitting layers, the light-emitting layers should be selected such that the light-emitting colors of each layer are complementary. For example, by making the light-emitting color of the first light-emitting layer and the light-emitting color of the second light-emitting layer complementary, a configuration that emits white light as a whole can be obtained. Also, when obtaining white light emission using three or more light-emitting layers, the light-emitting device should be configured so that the light-emitting colors of the three or more layers combine to emit white light as a whole.

[0219] A tandem device preferably has two or more light-emitting units between a pair of electrodes, and each light-emitting unit preferably includes one or more light-emitting layers. To obtain white light emission, the device should be configured such that the light from the light-emitting layers of the multiple light-emitting units is combined to produce white light emission. The configuration for obtaining white light emission is the same as that for a single-structure device. In a tandem device, it is preferable to provide an intermediate layer, such as a charge-generating layer, between the multiple light-emitting units.

[0220] Furthermore, when comparing the aforementioned white light-emitting devices (single or tandem structure) with SBS structure light-emitting devices, SBS structure light-emitting devices can consume less power than white light-emitting devices. If you want to keep power consumption low, it is preferable to use SBS structure light-emitting devices. On the other hand, white light-emitting devices are preferable because their manufacturing process is simpler than that of SBS structure light-emitting devices, which can lead to lower manufacturing costs or higher manufacturing yields.

[0221] Furthermore, a tandem structure device may have a configuration (such as BB, GG, RR) in which light-emitting layers emit light of the same color. Although a tandem structure, which obtains light emission from multiple layers, requires a high voltage for light emission, the current required to obtain the same light emission intensity as a single structure is smaller. Therefore, in a tandem structure, the current stress per light-emitting unit can be reduced, and the device lifespan can be extended.

[0222] <Example Configuration> Figure 15 shows a schematic top view of a display device 100 manufactured using a light-emitting device manufacturing apparatus according to one embodiment of the present invention. The display device 100 has multiple red light-emitting devices 110R, multiple green light-emitting devices 110G, and multiple blue light-emitting devices 110B. In Figure 15, the labels R, G, and B are added within the light-emitting area of ​​each light-emitting device to simplify the distinction between them.

[0223] Light-emitting devices 110R, 110G, and 110B are each arranged in a matrix. Figure 15 shows a so-called stripe arrangement in which light-emitting devices of the same color are arranged in one direction. Note that the arrangement method of the light-emitting devices is not limited to this, and other arrangement methods such as delta arrangement and zigzag arrangement may be applied, or pentile arrangement or other arrangements may be used.

[0224] It is preferable to use EL elements such as OLED (Organic Light Emitting Diode) or QLED (Quantum-dot Light Emitting Diode) as light-emitting devices 110R, 110G, and 110B. Examples of light-emitting materials for EL elements include fluorescent materials, phosphorescent materials, inorganic compounds (such as quantum dot materials), and thermally activated delayed fluorescence (TADF) materials.

[0225] Figure 16A is a schematic cross-sectional view corresponding to the dashed line A1-A2 in Figure 15.

[0226] Figure 16A shows cross-sections of light-emitting devices 110R, 110G, and 110B. Light-emitting devices 110R, 110G, and 110B are each mounted on a pixel circuit and have a pixel electrode 111 and a common electrode 113.

[0227] The light-emitting device 110R has an EL layer 112R between the pixel electrode 111 and the common electrode 113. The EL layer 112R contains a luminescent organic compound that emits light having a peak in at least the red wavelength range. The EL layer 112G of the light-emitting device 110G contains a luminescent organic compound that emits light having a peak in at least the green wavelength range. The EL layer 112B of the light-emitting device 110B contains a luminescent organic compound that emits light having a peak in at least the blue wavelength range. The EL layers 112R, 112G, and 112B each have an SBS structure that emits light of different colors.

[0228] Each of the EL layers 112R, 112G, and 112B may have, in addition to a layer containing a light-emitting organic compound (light-emitting layer), one or more of the following: an electron injection layer, an electron transport layer, a hole injection layer, and a hole transport layer.

[0229] A pixel electrode 111 is provided for each light-emitting device. A common electrode 113 is provided as a continuous layer common to each light-emitting device. A conductive film that is transparent to visible light is used on either the pixel electrode 111 or the common electrode 113, and a conductive film that is reflective is used on the other. By making the pixel electrode 111 transparent and the common electrode 113 reflective, a bottom-emission type display device can be made, and conversely, by making the pixel electrode 111 reflective and the common electrode 113 transparent, a top-emission type display device can be made. Furthermore, by making both the pixel electrode 111 and the common electrode 113 transparent, a dual-emission type display device can be made. In this embodiment, an example of manufacturing a top-emission type display device will be described.

[0230] The EL layer 112R, EL layer 112G, and EL layer 112B each have a region that is in contact with the upper surface of the pixel electrode 111.

[0231] As shown in Figure 16A, a gap is provided between the two EL layers in light-emitting devices of different colors. It is preferable that the EL layers 112R, 112G, and 112G are arranged so that they do not touch each other. This effectively prevents current from flowing through two adjacent EL layers and causing unintended light emission. Therefore, contrast can be enhanced, and a display device with high display quality can be realized.

[0232] Furthermore, a protective layer 121 is provided on the common electrode 113, covering the light-emitting devices 110R, 110G, and 110B. The protective layer 121 has the function of preventing impurities from diffusing into each light-emitting device from above. Alternatively, the protective layer 121 has the function of capturing (also called gettering) impurities (typically impurities such as water and hydrogen) that may enter each light-emitting device.

[0233] The protective layer 121 can be, for example, a single-layer structure or a multilayer structure including at least an inorganic insulating film. Examples of inorganic insulating films include oxide films or nitride films such as silicon oxide film, silicon oxide nitride film, silicon nitride film, silicon nitride film, aluminum oxide film, aluminum oxide nitride film, and hafnium oxide film. Alternatively, semiconductor materials such as indium gallium oxide and indium gallium zinc oxide may be used as the protective layer 121.

[0234] The pixel electrode 111 is electrically connected to either the source or the drain of the transistor 116. For example, the transistor 116 can be a transistor having a metal oxide in its channel formation region (hereinafter referred to as an OS transistor). OS transistors have higher mobility and superior electrical characteristics than transistors using amorphous silicon. Furthermore, the crystallization process in the manufacturing process of polycrystalline silicon is unnecessary, and they can be formed in wiring processes, etc. Therefore, they can be formed on a transistor 115 (hereinafter referred to as a Si transistor) having silicon in its channel formation region formed on the substrate 61 without using bonding processes, etc.

[0235] Here, transistor 116 is a transistor that constitutes the pixel circuit. Transistor 115 is a transistor that constitutes the drive circuit for the pixel circuit, etc. In other words, since the pixel circuit can be formed on the drive circuit, a narrow-bezel display device can be formed.

[0236] As the semiconductor material used in the OS transistor, a metal oxide with an energy gap of 2 eV or more, preferably 2.5 eV or more, and more preferably 3 eV or more, can be used.

[0237] OS transistors exhibit extremely low off-current characteristics, such as a few yA / μm (current value per 1 μm channel width), due to the large energy gap of the semiconductor layer. At room temperature, the off-current value of an OS transistor per 1 μm channel width is 1 aA (1 × 10⁻¹⁶). -18 A) Below, 1zA(1×10 -21 A) Less than or equal to 1yA(1×10 -24 A) It can be less than or equal to the following. Note that the off-current value of a Si transistor per 1 μm of channel width at room temperature is 1 fA (1 × 10⁻¹⁰). -15 A) More than 1pA (1×10 -12 A) The answer is as follows. Therefore, it can be said that the off-current of an OS transistor is about 10 orders of magnitude lower than that of a Si transistor.

[0238] Furthermore, OS transistors have characteristics that differ from Si transistors, such as the absence of impact ionization, avalanche breakdown, and short-channel effects, enabling the formation of highly reliable circuits with high voltage resistance. In addition, variations in electrical characteristics caused by crystalline non-uniformity, which are problematic in Si transistors, are less likely to occur in OS transistors.

[0239] The semiconductor layer of the OS transistor can be a film represented by an In-M-Zn-based oxide containing, for example, indium, zinc, and one or more of metals M (such as aluminum, titanium, gallium, germanium, yttrium, zirconium, lanthanum, cerium, tin, neodymium, or hafnium). The In-M-Zn-based oxide can typically be formed by a sputtering method. Alternatively, it may be formed using the ALD method.

[0240] For example, as the In-M-Zn-based oxide, an oxide (IGZO) containing indium (In), gallium (Ga), and zinc (Zn) can be used. Alternatively, an oxide (IAZO) containing indium (In), aluminum (Al), and zinc (Zn) may be used. Alternatively, an oxide (IAGZO) containing indium (In), aluminum (Al), gallium (Ga), and zinc (Zn) may be used.

[0241] The atomic ratio of the metal elements of the sputtering target used to form the In-M-Zn-based oxide by the sputtering method preferably satisfies In≧M and Zn≧M. As such an atomic ratio of the metal elements of the sputtering target, In:M:Zn = 1:1:1, In:M:Zn = 1:1:1.2, In:M:Zn = 1:3:2, In:M:Zn = 3:1:2, In:M:Zn = 4:2:3, In:M:Zn = 4:2:4.1, In:M:Zn = 5:1:6, In:M:Zn = 5:1:7, In:M:Zn = 5:1:8, etc., or a composition in the vicinity thereof is preferable. Note that the atomic ratio of the semiconductor layer formed respectively includes a variation of plus or minus 40% of the atomic ratio of the metal elements contained in the above sputtering target.

[0242] As the semiconductor layer, an oxide semiconductor with a low carrier density is used. For example, the semiconductor layer has a carrier density of 1×10 17 / cm 3 or less, preferably 1×10 15 / cm 3 or less, more preferably 1×10 13 / cm 3More preferably 1 × 10 11 / cm 3 More preferably 1 × 10 10 / cm 3 It is less than 1 × 10 -9 / cm 3 Oxide semiconductors with the carrier densities described above can be used. Such oxide semiconductors are called high-purity intrinsic or substantially high-purity intrinsic oxide semiconductors. These oxide semiconductors have a low defect level density and are considered to be stable oxide semiconductors.

[0243] However, this is not limited to these, and any composition appropriate to the semiconductor characteristics and electrical characteristics (field-effect mobility, threshold voltage, etc.) of the transistor should be used. Furthermore, in order to obtain the semiconductor characteristics of the transistor, it is preferable to appropriately adjust the carrier density and impurity concentration of the semiconductor layer, defect density, atomic ratio of metal elements to oxygen, interatomic distance, density, etc.

[0244] The display device shown in Figure 16A has an OS transistor and a light-emitting device with an MML (metal maskless) structure. This configuration makes it possible to extremely low leakage current that can flow through the transistor and leakage current that can flow between adjacent light-emitting elements (also called lateral leakage current or side leakage current). Furthermore, with this configuration, when an image is displayed on the display device, the observer can observe one or more of the following: image sharpness, image clarity, and a high contrast ratio. Moreover, by having an extremely low leakage current that can flow through the transistor and lateral leakage current between light-emitting elements, it is possible to achieve a display with almost no light leakage that may occur when displaying black (also called a true black display).

[0245] Figure 16A illustrates different configurations for the R, G, and B light-emitting layers of each light-emitting device, but the method is not limited to these. For example, as shown in Figure 16B, an EL layer 112W that emits white light may be provided, and colored layers 114R (red), 114G (green), and 114B may be provided superimposed on the EL layer 112W to form light-emitting devices 110R, 110G, and 110B, thereby enabling colorization.

[0246] The EL layer 112W can have a tandem structure in which EL layers that emit red, green, and blue light are connected in series. Alternatively, a structure in which light-emitting layers that emit red, green, and blue light are connected in series may be used. As the colored layers 114R, 114G, and 114B, for example, red, green, and blue color filters can be used.

[0247] Alternatively, as shown in Figure 16C, the Si transistor (transistor 117) on the substrate 61 may be used to form a pixel circuit, and either the source or drain of the transistor 117 may be electrically connected to the pixel electrode 111.

[0248] <Example of manufacturing method> The following describes an example of a method for manufacturing a light-emitting device that can be produced using a manufacturing apparatus according to one embodiment of the present invention. Here, the light-emitting device of the display device 100 shown in the above configuration example will be used as an example.

[0249] Figures 17A to 20E are schematic cross-sectional diagrams of each step in the manufacturing method of the light-emitting device exemplified below. Note that in Figures 17A to 20E, transistor 116, which is a component of the pixel circuit shown in Figure 16A, and transistor 115, which is a component of the driving circuit, are omitted from the illustration.

[0250] Thin films (insulating films, semiconductor films, conductive films, etc.) that constitute a display device can be formed using sputtering, chemical vapor deposition (CVD), vacuum deposition, atomic layer deposition (ALD), and the like. CVD methods include plasma-enhanced CVD (PECVD) and thermal CVD. One type of thermal CVD is metal-organic CVD (MOCVD). A manufacturing apparatus in one embodiment of the present invention may have an apparatus for forming thin films using the above methods.

[0251] Furthermore, methods such as spin coating, dip coating, spray coating, inkjet, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, and knife coating can be used for forming thin films (insulating films, semiconductor films, conductive films, etc.) that constitute the display device and for coating resins used in the lithography process. A manufacturing apparatus according to one embodiment of the present invention may have an apparatus for forming thin films using the above method. A manufacturing apparatus according to one embodiment of the present invention may also have an apparatus for coating resins using the above method.

[0252] Furthermore, when processing the thin film that constitutes the display device, photolithography or the like can be used. Alternatively, the thin film may be processed using nanoimprint lithography. In addition, a method of directly forming island-shaped thin films using a film deposition method with a shielding mask may be used in combination.

[0253] There are two main methods for processing thin films using photolithography. One method involves forming a resist mask on the thin film to be processed, then processing the thin film by etching or other means, and finally removing the resist mask. The other method involves forming a photosensitive thin film, then exposing and developing it to process the thin film into the desired shape.

[0254] In photolithography, the light used for exposure can be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture thereof. Other options include ultraviolet light, KrF laser light, or ArF laser light. Exposure may also be performed using immersion lithography. Furthermore, extreme ultraviolet (EUV) light or X-rays may be used as the light source for exposure. An electron beam can also be used instead of the light source. Using extreme ultraviolet light, X-rays, or an electron beam is preferable because it allows for extremely fine processing. Note that a photomask is not required when exposure is performed by scanning a beam such as an electron beam.

[0255] For etching thin films, dry etching methods, wet etching methods, and the like can be used. In one embodiment of the present invention, the manufacturing apparatus may have an apparatus for processing thin films using the above methods.

[0256] <Preparation of substrate 61> As the substrate 61, a substrate having at least sufficient heat resistance to withstand subsequent heat treatment can be used. When using an insulating substrate 61, glass substrates, quartz substrates, sapphire substrates, ceramic substrates, organic resin substrates, etc., can be used. In addition, semiconductor substrates such as single-crystal semiconductor substrates made of silicon or silicon carbide, polycrystalline semiconductor substrates, compound semiconductor substrates such as silicon germanium, and SOI substrates can be used. Note that the shape of the substrate is not limited to a wafer; a rectangular substrate can also be used.

[0257] In particular, it is preferable to use a substrate 61 on which a semiconductor circuit including semiconductor elements such as Si transistors is formed on the semiconductor substrate or insulating substrate. It is preferable that the semiconductor circuit constitutes, for example, a pixel circuit, a gate line driving circuit (gate driver), a source line driving circuit (source driver), etc. In addition to the above, an arithmetic circuit, a memory circuit, etc. may also be configured.

[0258] <Formation of pixel circuit and pixel electrode 111> Next, multiple pixel circuits are formed on the substrate 61, and pixel electrodes 111 are formed on each pixel circuit (see Figure 17A). First, a conductive film to be the pixel electrode 111 is deposited, a resist mask is formed by photolithography, and unnecessary parts of the conductive film are removed by etching. After that, the pixel electrode 111 can be formed by removing the resist mask.

[0259] For the pixel electrode 111, it is preferable to use a material with the highest possible reflectivity across the entire visible light wavelength range (for example, silver or aluminum). A pixel electrode 111 formed from such a material can be described as an electrode with light reflectivity. This not only improves the light extraction efficiency of the light-emitting device but also enhances color reproduction.

[0260] Furthermore, it is preferable that the light-emitting device has a microcavity structure. Therefore, it is preferable that one of the pair of electrodes in the light-emitting device has an electrode that is transparent and reflective to visible light (a semi-transparent / semi-reflective electrode), and the other has an electrode that is reflective to visible light (a reflective electrode). By having a microcavity structure in the light-emitting device, the light emitted from the light-emitting layer can be resonated between the two electrodes, thereby strengthening the light emitted from the light-emitting device. Therefore, the pixel electrode 111 may have a laminated structure of the above-mentioned highly reflective material and a translucent conductive film (such as indium tin oxide).

[0261] Next, a baking process is performed to remove any remaining moisture from the surface of the pixel electrode 111. The baking process can be carried out using a vacuum baking apparatus or a film deposition apparatus. The vacuum baking conditions are preferably 100°C or higher.

[0262] Subsequently, the surface treatment of the pixel electrode 111 is performed. For example, using a plasma processing apparatus, plasma is generated with a fluorine-based gas such as CF4 and irradiated onto the surface of the pixel electrode 111. By this plasma treatment, the adhesion between the pixel electrode 111 and the EL film formed in the next step can be enhanced, and peeling defects can be suppressed.

[0263] <Formation of EL film 112Rf> Subsequently, an EL film 112Rf, which will later become the EL layer 112R, is formed on the pixel electrode 111.

[0264] The EL film 112Rf has a film containing at least a red light-emitting organic compound. In addition, it may have a structure in which an electron injection layer, an electron transport layer, a charge generation layer, a hole transport layer, and a hole injection layer are laminated. The EL film 112Rf can be formed, for example, by vapor deposition or sputtering. However, it is not limited to this, and the above-described film formation methods can be appropriately used.

[0265] <Formation of protective films 125Rf1 and 125Rf2> Subsequently, protective films 125Rf1 and 125Rf2, which will later become the protective layers 125R1 and 125R2, are formed on the EL film 112Rf (see FIG. 17B).

[0266] [[ID=2o]]The protective layers 125R1 and 125R2 are temporary protective layers used for preventing the deterioration of the EL layer 112R and for processing in the manufacturing process of the light-emitting device, and are also called mask layers. The protective films 125Rf1 and 125Rf2 preferably have high barrier properties against moisture and the like and are formed by a film formation method that is less likely to damage the organic compound during film formation. Also, it is preferably formed of a material that can use an etchant that is less likely to damage the organic compound in the etching process. For the protective films 125Rf1 and 125Rf2, inorganic films such as metal films, alloy films, metal oxide films, semiconductor films, and inorganic insulating films can be used.

[0267] For example, it is preferable to use a metal such as tungsten, an inorganic insulating film such as aluminum oxide, or a laminate of these for the protective film 125Rf1 and protective film 125Rf2. Here, an example in which aluminum oxide is used for protective film 125Rf1 and tungsten for protective film 125Rf2 will be described. By laminating different types of films, a protective film with strong resistance to the manufacturing environment can be made. Alternatively, a laminated configuration of an aluminum oxide film formed by the ALD method and a silicon nitride film formed by the sputtering method may be used for protective film 125Rf1.

[0268] When depositing protective films 125Rf1 and 125Rf2 using the ALD method and sputtering method, it is preferable to set the deposition temperature to room temperature or higher and 140°C or lower, preferably room temperature or higher and 120°C or lower, and more preferably room temperature or higher and 100°C or lower, as this reduces the impact on the EL layer. Furthermore, when protective layers 125R1 and 125R2 are laminated films, it is preferable to reduce the stress of the laminated film. Specifically, by setting the stress of each layer constituting the laminated film to be between -500 MPa and +500 MPa, more preferably between -200 MPa and +200 MPa, process problems such as film delamination and peeling can be suppressed.

[0269] <Formation of resist mask 143a> Next, a resist mask 143a is formed on the pixel electrode 111 corresponding to the light-emitting device 110R (see Figure 17C). The resist mask 143a can be formed by a lithography process.

[0270] <Formation of protective layer 125R1 and protective layer 125R2> Next, the protective film 125Rf1 and protective film 125Rf2 are etched using the resist mask 143a as a mask to form the protective layers 125R1 and 125R2 in an island-like manner. Either a dry etching method or a wet etching method can be used for the etching process. Afterward, the resist mask 143a is removed using ashing or a resist stripping solution (see Figure 17D).

[0271] <Formation of EL layer 112R> Subsequently, using the protective layers 125R1 and 125R2 as masks, the EL film 112Rf is etched to form the EL layer 112R in an island shape (see Fig. 17E). It is preferable to use a dry etching method for the etching process.

[0272] <Formation of EL film 112Gf> Subsequently, a baking process is performed to remove the moisture remaining on the surface of the pixel electrode 111. The baking process can be carried out using a vacuum baking apparatus or a film forming apparatus. Here, the conditions for vacuum baking are set to 100 °C or lower, preferably 90 °C or lower, and more preferably 80 °C or lower so as not to damage the EL layer 112R. When vacuum baking is performed at 80 °C, it has been found from the measurement results of the temperature programmed desorption gas analysis method (TDS) that by heating for 30 minutes or more, the desorbed moisture (H2O) is sufficiently reduced.

[0273] Subsequently, surface treatment of the exposed pixel electrode 111 is performed. For example, using a plasma treatment apparatus, plasma is generated with a fluorine-based gas such as CF4 and irradiated onto the surface of the pixel electrode 111. Then, an EL film 112Gf that becomes the EL layer 112G is formed on the pixel electrode 111.

[0274] The EL film 112Gf has a film containing at least a green light-emitting organic compound. In addition, it may have a structure in which an electron injection layer, an electron transport layer, a charge generation layer, a hole transport layer, and a hole injection layer are laminated.

[0275] <Formation of protective films 125Gf1 and 125Gf2> Subsequently, protective films 125Gf1 and 125Gf2 that will later become the protective layer 125G are formed on the EL film 112Gf (see Fig. 18A). The protective film 125Gf1 can be formed of the same material as the protective film 125Rf1. The protective film 125Gf2 can be formed of the same material as the protective film 125Rf2.

[0276] <Formation of resist mask 143b> Subsequently, a resist mask 143b is formed on the pixel electrode 111 corresponding to the light-emitting device 110G (see FIG. 18B). The resist mask 143b can be formed in a lithography process.

[0277] <Formation of the protective layers 125G1 and 125G2> Subsequently, using the resist mask 143b as a mask, the protective films 125Gf1 and 125Gf2 are etched to form the protective layers 125G1 and 125G2 in an island shape. A dry etching method or a wet etching method can be used in the etching process. Thereafter, the resist mask 143b is removed by ashing or a resist stripper.

[0278] <Formation of the EL layer 112G> Subsequently, using the protective layers 125G1 and 125G2 as masks, the EL film 112Gf is etched to form the EL layer 112G in an island shape (see FIG. 18C). It is preferable to use a dry etching method in the etching process.

[0279] <Formation of the EL film 112Bf> Subsequently, a baking process is performed to remove the moisture remaining on the surface of the pixel electrode 111. The baking process can be performed using a vacuum baking apparatus or a film forming apparatus. Here, the vacuum baking conditions are set to 100 °C or lower, preferably 90 °C or lower, more preferably 80 °C or lower so as not to damage the EL layers 112R and 112G.

[0280] Subsequently, the surface of the exposed pixel electrode 111 is treated. For example, using a plasma treatment apparatus, plasma is generated using a fluorine-based gas such as CF4 and irradiated onto the surface of the pixel electrode 111. Then, an EL film 112Bf that becomes the EL layer 112B is formed on the pixel electrode 111.

[0281] The EL film 112Bf has a film containing at least a blue light-emitting organic compound. In addition, a structure in which an electron injection layer, an electron transport layer, a charge generation layer, a hole transport layer, and a hole injection layer are laminated may also be used.

[0282] <Formation of protective film 125Bf> Subsequently, a protective film 125Bf1 and a protective film 125Bf2, which will later become the protective layer 125B1 and the protective layer 125B2, are formed on the EL film 112Bf (see Fig. 18D). The protective film 125Bf1 can be formed of the same material as the protective film 125Rf1. The protective film 125Bf2 can be formed of the same material as the protective film 125Rf2.

[0283] <Formation of resist mask 143c> Subsequently, a resist mask 143c is formed on the pixel electrode 111 corresponding to the light-emitting device 110B (see Fig. 18E). The resist mask 143c can be formed in a lithography process.

[0284] <Formation of protective layer 125B1 and protective layer 125B2> Subsequently, using the resist mask 143c as a mask, the protective film 125Bf1 and the protective film 125Bf2 are etched to form the protective layer 125B1 and the protective layer 125B2 in an island shape. A dry etching method or a wet etching method can be used in the etching process. Then, the resist mask 143c is removed by ashing or resist stripping solution.

[0285] <Formation of EL layer 112B> Subsequently, using the protective layer 125B1 and the protective layer 125B2 as masks, the EL film 112Bf is etched to form the EL layer 112B in an island shape (see Fig. 19A). It is preferable to use a dry etching method in the etching process.

[0286] <Removal of protective layer 125R2, protective layer 125G2, and protective layer 125B2> Subsequently, the protective layer 125R2, the protective layer 125G2, and the protective layer 125B2 are removed (see Fig. 19B). It is preferable to use a dry etching method or a wet etching method, etc. for the removal of the protective layers 125R2, 125G2, 125B2. Furthermore, cleaning such as the side surfaces of the EL layer 112R, the EL layer 112G, and the EL layer 112B may be performed using a plasma processing apparatus or the like.

[0287] <Formation of barrier film 126f> Next, a barrier film 126f, which will later become a barrier layer 126, is formed to cover the sides of the EL layers 112R, 112G, and 112B, as well as the protective layers 125R1, 125G1, and 125B1 (see Figure 19C). By providing the barrier layer 126, the sides of the EL layers 112R, 112G, and 112B can be sealed, thereby improving the reliability of the light-emitting device. The barrier film 126f can be formed using an inorganic film similar to the protective film 125Rf1 by methods such as CVD, ALD, or sputtering.

[0288] <Formation of insulating layer 127> Next, an insulating layer 127 is formed to fill the spaces between the pixel electrodes and the EL layers. By forming the insulating layer 127, steps can be eliminated, preventing the conductive film (common electrode) formed on the EL layer in a later step from being cut off. In addition, by covering the vicinity of the sides of the EL layer with the insulating layer 127, the intrusion of impurities into the EL layer and peeling of the EL layer can be prevented. The insulating layer 127 can also be described as an interlayer insulating layer provided between the conductive film and the pixel electrode 111.

[0289] It is preferable to use an organic insulating layer for the insulating layer 127. For example, acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimidoamide resin, silicone resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins can be used as the insulating layer 127. Alternatively, organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin may be used as the insulating layer 127. Furthermore, a photosensitive resin can also be used as the insulating layer 127. The photosensitive resin may be either a positive-type or negative-type material and can be formed, for example, using a process similar to that of lithography.

[0290] Here, an example of using a positive photosensitive resin for the insulating layer 127 will be described. First, using a device for applying the resin described above, an insulating layer 127 is formed on the barrier film 126f (see FIG. 19D), and pre-baking is performed using a baking device.

[0291] Subsequently, using an exposure device, ultraviolet light UV is irradiated through a photomask 250 onto the regions where the insulating layer 127 is not required (see FIG. 19E). Then, in the development process, the unnecessary regions of the insulating layer 127 are removed (see FIG. 20A).

[0292] Subsequently, post-baking is performed using a baking device. Depending on the material used, ultraviolet light may be irradiated before post-baking to promote the curing reaction of the resin.

[0293] By post-baking, the insulating layer 127 reflows, and the upper surface of the insulating layer 127 becomes curved (see FIG. 20B). By making the upper surface of the insulating layer 127 curved, the coverage of the conductive film (common electrode) formed in the subsequent process can be improved, and step discontinuities can be prevented. Note that the upper surface of the insulating layer 127 may also have a curved shape after the development process.

[0294] <Formation of the barrier layer 130> Subsequently, using a dry etching method, with the insulating layer 127 as a mask, the barrier film 126f and the protective layers 125R1, 125G1, and 125B1 are removed to form a barrier layer 130 (see FIG. 20C). Also, in this process, the upper surfaces of the EL layers 112R, 112G, and 112B are exposed.

[0295] Note that in this process, a part of each of the protective layers 125R1, 125G1, and 125B1 remains between the barrier layer 130 and each of the EL layers 112R, 112G, and 112B. Therefore, the diffusion of impurities from the insulating layer 127 to the EL layers 112R, 112G, and 112B can be strongly suppressed.

[0296] Here, we show an example in which the barrier film 126f and the protective layers 125R1, 125G1, and 125B1 are removed in the same process. However, the process for removing the barrier film 126f and the process for removing the protective layers 125R1, 125G1, and 125B1 may be different. For example, one may be removed by dry etching and the other by wet etching. Alternatively, after removing one, the edge of the insulating layer 127 may be recessed in an ashing process before removing the other. This process makes it less likely for voids to form under the insulating layer 127.

[0297] <Common electrode formation> Next, a conductive film (cathode) which will serve as the common electrode 113 of the light-emitting device is formed on the EL layer 112R, EL layer 112G, EL layer 112B, and insulating layer 127 that were exposed in the previous step (see Figure 20D). As the common electrode 113, a thin metal film that transmits light emitted from the light-emitting layer (e.g., an alloy of silver and magnesium) or a translucent conductive film (e.g., indium tin oxide, or an oxide containing one or more elements such as indium, gallium, or zinc) can be used, either as a single film or a laminate of both. The common electrode 113 made of such a film can be said to be a light-transmitting electrode. A vapor deposition apparatus and / or a sputtering apparatus can be used in the process of forming the conductive layer that will serve as the common electrode 113.

[0298] Furthermore, to improve reliability, before forming the common electrode 113, a layer having one of the functions of an electron injection layer, electron transport layer, charge generation layer, hole transport layer, or hole injection layer may be provided as a common layer on the EL layer 112R, EL layer 112G, and EL layer 112B.

[0299] By having a light-reflecting electrode as the pixel electrode 111 and a light-transmitting electrode as the common electrode 113, light emitted from the light-emitting layer can be emitted to the outside through the common electrode 113. In other words, a top-emission type light-emitting device is formed.

[0300] <Protective layer formation> Next, a protective layer 121 is formed on the common electrode 113 (see Figure 20E). A sputtering apparatus, a CVD apparatus, or an ALD apparatus can be used for the process of forming the protective layer 121.

[0301] The above is an example of a method for manufacturing a light-emitting device that can be produced using a manufacturing apparatus according to one embodiment of the present invention. Note that, as described in the explanation of Figure 20C, if the barrier film 126f is removed, and then the edges of the insulating layer 127 are recessed in the ashing process to remove the protective layers 125R1, 125G1, and 125B1, the configuration will be as shown in Figure 21A. Note that, as shown in Figure 21B, the edges of the protective layers 125R1, 125G1, and 125B1 may have a stepped shape.

[0302] Furthermore, the shape of each layer in the cross-section of the light-emitting device can be observed using a scanning electron microscope (SEM) or a transmission electron microscope (TEM). However, if the barrier layer 126 and protective layers 125R1, 125G1, and 125B1 are made of the same material, the interface may not be clearly observed and may be observed in the shape shown in Figure 21C.

[0303] In addition, as shown in Figure 21D, the light-emitting device that can be manufactured using the manufacturing apparatus according to one embodiment of the present invention may have a pixel electrode 111 and an EL layer of equal area. Alternatively, as shown in Figure 21E, the area of ​​the EL layer may be smaller than the area of ​​the pixel electrode 111.

[0304] <Example of manufacturing equipment> Figure 22 shows an example of a manufacturing apparatus that can be used in the manufacturing process from the formation of the EL film 112Rf to the formation of the protective layer 121 described above. The basic configuration of the manufacturing apparatus shown in Figure 22 is the same as that of the manufacturing apparatus shown in Figure 5.

[0305] The following provides a detailed explanation of clusters C1 through C13. Figure 22 is a schematic perspective view of the entire manufacturing apparatus, omitting illustrations of utilities and gate valves.

[0306] <Cluster C1> In cluster C1, a cleaning process is performed before the deposition of the EL film 112Rf. Cluster C1 includes a cleaning apparatus and a baking apparatus.

[0307] <Cluster C2> In cluster C2, the process of forming the EL film 112Rf is carried out. Cluster C2 has a surface treatment apparatus for surface treatment of the substrate (pixel electrode 111) on which the EL film 112Rf is formed, a deposition apparatus for forming the EL film 112Rf (one or more organic compound layers such as the light-emitting layer (R), electron injection layer, electron transport layer, charge generation layer, hole transport layer, and hole injection layer), and a film deposition apparatus (e.g., a sputtering apparatus, an ALD apparatus, etc.) for forming the protective film 125Rf1 and the protective film 125Rf2.

[0308] <Cluster C3> In cluster C3, a lithography process is performed to form the resist mask 143a. Cluster C3 includes a resin (photoresist) coating apparatus, a pre-bake apparatus, an exposure apparatus, a developing apparatus, and a post-bake apparatus. Alternatively, it may also include a nanoimprint apparatus.

[0309] <Cluster C4> In cluster C4, etching of protective films 125Rf1 and 125Rf2, etching of the EL film 112Rf, and removal of the resist mask 143a are performed. Cluster C4 includes a first dry etching apparatus for etching protective films 125Rf1 and 125Rf2, and a second dry etching apparatus for forming the EL layer 112R and ashing the resist mask 143a.

[0310] <Cluster C5> In cluster C5, the process of forming the EL film 112Gf is carried out. Cluster C5 has a surface treatment apparatus for surface treatment of the substrate (pixel electrode 111) on which the EL film 112Gf is formed, a deposition apparatus for forming the EL film 112Gf (one or more organic compound layers such as the light-emitting layer (G), electron injection layer, electron transport layer, charge generation layer, hole transport layer, and hole injection layer), and a film deposition apparatus (e.g., sputtering apparatus, ALD apparatus, etc.) for forming the protective film 125Gf1 and protective film 125Gf2.

[0311] <Cluster C6> In cluster C6, a lithography process is performed to form the resist mask 143b. Cluster C6 includes a resin (photoresist) coating apparatus, a pre-bake apparatus, an exposure apparatus, a developing apparatus, and a post-bake apparatus. Alternatively, it may also include a nanoimprint apparatus.

[0312] <Cluster C7> In cluster C7, etching of protective films 125Gf1 and 125Gf2, etching of the EL film 112Gf, and removal of the resist mask 143b are performed. Cluster C7 has a first dry etching apparatus for etching protective films 125Gf1 and 125Gf2, and a second dry etching apparatus for forming the EL layer 112G and ashing the resist mask 143b.

[0313] <Cluster C8> In cluster C8, the process of forming the EL film 112Bf is carried out. Cluster C8 has a surface treatment apparatus for surface treatment of the substrate (pixel electrode 111) on which the EL film 112Bf is formed, a deposition apparatus for forming the EL film 112Bf (one or more organic compound layers such as the light-emitting layer (B), electron injection layer, electron transport layer, charge generation layer, hole transport layer, and hole injection layer), and a film deposition apparatus (e.g., a sputtering apparatus, an ALD apparatus, etc.) for forming the protective film 125Bf1 and the protective film 125Bf2.

[0314] <Cluster C9> In cluster C9, a lithography process is performed to form the resist mask 143c. Cluster C9 includes a resin (photoresist) coating apparatus, a pre-bake apparatus, an exposure apparatus, a developing apparatus, and a post-bake apparatus. Alternatively, it may also include a nanoimprint apparatus.

[0315] <Cluster C10> In cluster C10, etching of protective films 125Bf1 and 125Bf2, etching of EL film 112Bf, removal of resist mask 143c, removal of protective films 125Rf2, 125Gf2, and 125Bf2, surface cleaning, and formation of barrier layer 126 are performed.

[0316] Cluster C10 includes a first dry etching apparatus for etching protective films 125Gf1 and 125Gf2, a second dry etching apparatus for forming the EL layer 112G and ashing the resist mask 143c, a third dry etching apparatus for removing protective films 125Rf2, 125Gf2, and 125Bf2, a plasma processing apparatus for cleaning the sides of the EL layers 112R, 112G, and 112B, and a film deposition apparatus (e.g., a sputtering apparatus, an ALD apparatus, etc.) for depositing the barrier film 126f.

[0317] <Cluster C11> In cluster C11, the insulating layer 127 is formed. Cluster C11 may have equipment used in the lithography process, such as a resin coating device, a pre-bake device, a first exposure device, a developing device, and a post-bake device. It may also have a second exposure device.

[0318] <Cluster C12> In cluster C12, the barrier film 126f and protective films 125Rf1, 125Gf1, and 125Bf1 are etched. Cluster C12 has a wet etching apparatus for etching the barrier film 126f and protective films 125Rf1, 125Gf1, and 125Bf1.

[0319] <Cluster C13> In cluster C13, an organic compound layer, a common electrode 113, and a protective layer 121 are formed. Cluster C13 has a deposition apparatus for forming one or more organic compound layers (such as an electron injection layer, electron transport layer, charge generation layer, hole transport layer, hole injection layer, etc.), a film deposition apparatus for forming the common electrode 113 (e.g., a sputtering apparatus, an ALD apparatus, etc.), and a film deposition apparatus for forming the protective layer 121 (e.g., a sputtering apparatus, an ALD apparatus, etc.).

[0320] Table 1 summarizes the elements corresponding to the process and processing equipment using the manufacturing apparatus shown in Figure 22, and the manufacturing methods shown in Figures 17A to 20E.

[0321] [Table 1]

[0322] A manufacturing apparatus according to one embodiment of the present invention has the function of automatically processing steps No. 1 to No. 53 shown in Table 1.

[0323] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. [Explanation of symbols]

[0324] A: Atmospheric pressure processing equipment, A1: Atmospheric pressure processing equipment, A2: Atmospheric pressure processing equipment, A3: Atmospheric pressure processing equipment, A4: Atmospheric pressure processing equipment, A5: Atmospheric pressure processing equipment, A6: Atmospheric pressure processing equipment, A7: Atmospheric pressure processing equipment, A8: Atmospheric pressure processing equipment, AM: Conveying equipment, AMa: Conveying equipment, AMb: Conveying equipment, AMc: Conveying equipment, AMd: Conveying equipment, AMe: Conveying equipment, AMf: Conveying equipment, AMg: Conveying equipment, AMh: Conveying equipment, AMi: Conveying equipment, AMj: Conveying equipment, B: Buffer room, B1: Buffer room, B2: Buffer room, Ba: Buffer room, Bb: Buffer room, Bc: Buffer chamber, Bd: Buffer chamber, Be: Buffer chamber, Bf: Buffer chamber, C1: Cluster, C2: Cluster, C3: Cluster, C4: Cluster, C5: Cluster, C6: Cluster, C7: Cluster, C8: Cluster, C9: Cluster, C10: Cluster, C11: Cluster, C12: Cluster, C12a: Cluster, C12b: Cluster, C12c: Cluster, C12d: Cluster, C12e: Cluster, C12f: Cluster, C12g: Cluster, C12h: Cluster, C13: Cluster, CN: Plasma processing device, CS: Cassette, CT: Coating Equipment, D: Film deposition equipment, Ea: Etching equipment, Eb: Etching equipment, Ec: Etching equipment, Ed: Etching equipment, Ef: Etching equipment, Eg: Etching equipment, Eh: Etching equipment, EXPa: Exposure equipment, EXPb: Exposure equipment, HTa: Bake equipment, HTb: Bake equipment, HTc: Bake equipment, HTd: Bake equipment, TF: Transfer room, TFa: Transfer room, TFb: Transfer room, TFc: Transfer room, TFd: Transfer room, TFe: Transfer room, TFf: Transfer room, TFg: Transfer room TFh: Transfer chamber, TFi: Transfer chamber, TFj: Transfer chamber, V: Vacuum process equipment, V1: Vacuum process equipment, V2: Vacuum process equipment, V3: Vacuum process equipment, V4: Vacuum process equipment, V5: Vacuum process equipment, V6: Vacuum process equipment, V7: Vacuum process equipment, V8: Vacuum process equipment, V9: Vacuum process equipment, V10: Vacuum process equipment, V11: Vacuum process equipment, W: Waiting room, 10: Manufacturing equipment, 20: Gate valve, 30: Film deposition equipment, 31: Film deposition material supply unit, 32: Mask jig, 33: Substrate alignment unit,35: Opening, 51: Substrate holder, 52: Evaporation source, 53: Shutter, 54: Exhaust port, 55: Inlet, 56: Lower electrode, 57: Target, 58: Upper electrode, 59: Shower plate, 60: Workpiece, 60a: Workpiece, 60b: Workpiece, 61: Substrate, 62: Substrate holder, 63: Substrate holder, 64: Heater, 71: Transfer device, 100: Display device, 110B: Light-emitting device, 1 10G: Light-emitting device, 110R: Light-emitting device, 111: Pixel electrode, 112B: EL layer, 112Bf: EL film, 112G: EL layer, 112Gf: EL film, 112R: EL layer, 112Rf: EL film, 112W: EL layer, 113: Common electrode, 114B: Coloring layer, 114G: Coloring layer, 114R: Coloring layer, 115: Transistor, 116: Transistor, 117: Transistor, 121 : Protective layer, 125B1: Protective layer, 125B2: Protective layer, 125Bf: Protective film, 125Bf1: Protective film, 125Bf2: Protective film, 125G: Protective layer, 125G1: Protective layer, 125G2: Protective layer, 125Gf1: Protective film, 125Gf2: Protective film, 125R1: Protective layer, 125R2: Protective layer, 125Rf1: Protective film, 125Rf2: Protective film, 126: Barrier layer, 126f: Barrier film, 1 27: Insulating layer, 130: Barrier layer, 143a: Resist mask, 143b: Resist mask, 143c: Resist mask, 200: Transfer device, 201: Controller, 202: Power source, 203: Battery, 204: Wheels, 205: Gas cylinder, 206: Valve, 207: Valve, 208: Inlet / Outlet, 209: Transfer device, 210: Inlet, 211: Outlet, 250: Photomask

Claims

1. It has a first cluster and a second cluster, The second cluster is connected to the first cluster via a first buffer chamber. For a workpiece in which an organic compound film, a first inorganic film, a second inorganic film, and a resist mask are sequentially laminated, The first cluster has the function of etching the first inorganic film and the second inorganic film, etching the organic compound film to form an organic compound layer, removing the resist mask, removing the second inorganic film, and forming a third inorganic film that covers the side surface of the organic compound layer. The second cluster is a manufacturing apparatus for a light-emitting device having the functions of coating a resin onto the third inorganic film, removing unwanted portions of the resin, and curing the resin under an inert gas atmosphere.

2. In claim 1, The first cluster comprises a first dry etching apparatus, a second dry etching apparatus, a third dry etching apparatus, and a film deposition apparatus. The second cluster is a manufacturing apparatus for light-emitting devices, comprising a coating apparatus, a first baking apparatus, an exposure apparatus, a developing apparatus, and a second baking apparatus.

3. In claim 2, The second dry etching apparatus described above is a manufacturing apparatus for light-emitting devices having an ashing function.

4. In claim 2, The aforementioned film deposition apparatus is a manufacturing apparatus for light-emitting devices, which is an ALD apparatus.

5. In any one of claims 1 to 4, It has a third cluster, The third cluster is connected to the second cluster via a second buffer chamber. The third cluster is a manufacturing apparatus for a light-emitting device having the function of etching the third inorganic film and the first inorganic film using the resin as a mask.

6. In claim 5, The third cluster mentioned above is, A manufacturing apparatus for light-emitting devices, comprising a fourth dry etching apparatus and a first wet etching apparatus.

7. In claim 5, The third cluster mentioned above is, A manufacturing apparatus for light-emitting devices, comprising a first wet etching apparatus and a second wet etching apparatus.

8. In any one of claims 1 to 4, It has a third cluster, The third cluster is connected to the second cluster via a second buffer chamber. The third cluster is a manufacturing apparatus for a light-emitting device having the function of etching the third inorganic film using the resin as a mask, ashing and receding the edges of the resin, and etching the first inorganic film.

9. In claim 8, The third cluster mentioned above is, A manufacturing apparatus for light-emitting devices, comprising a fourth dry etching apparatus, a dry etching apparatus or ashing apparatus having an ashing function, and a first wet etching apparatus.

10. In claim 8, The third cluster mentioned above is, A manufacturing apparatus for light-emitting devices, comprising a first wet etching apparatus, a dry etching apparatus or ashing apparatus having an ashing function, and a second wet etching apparatus.

11. In claim 5, It has a fourth cluster, The fourth cluster is connected to the third cluster via a third buffer chamber. The fourth cluster is a manufacturing apparatus for a light-emitting device having the function of forming a conductive layer and an insulating layer on the organic compound layer.

12. In claim 11, The fourth cluster is, A manufacturing apparatus for light-emitting devices having two or more of the following: a vapor deposition apparatus, a sputtering apparatus, and an ALD apparatus.

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