Heat treatment apparatus and method for controlling the temperature of the heat treatment apparatus

Abstract

To provide a technique that can improve the overall throughput of substrate processing by making it possible to efficiently adjust the temperature of a processing container.SOLUTION: A heat treatment apparatus includes a processing container having an internal space in which a substrate can be processed, and a temperature-controlled furnace that is arranged around the processing container and heats the substrate from the outside of the processing container. The heat treatment apparatus 1 includes an internal temperature control unit that is movable relatively to the processing container, and supplies a temperature control gas for adjusting the temperature of the processing container into the internal space in a state where the internal temperature control unit is arranged to face an opening that opens the internal space.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] The present disclosure relates to a heat treatment apparatus and a temperature adjustment method for a heat treatment apparatus.

Background Art

[0002] Patent Document 1 discloses a substrate processing apparatus (heat treatment apparatus) that accommodates a plurality of substrates in a processing container and performs substrate processing such as film formation by supplying a processing gas while heating each substrate.

[0003] For this type of heat treatment apparatus, in order to adjust the temperature of the processing container, the processing container is heated from the outside by a heater of a heater unit (temperature control furnace) installed outside the processing container, or the processing container is cooled from the outside by supplying air to the space inside the temperature control furnace. The heat treatment apparatus may adjust the temperature of the processing container within a range of, for example, 80°C to 800°C according to the requirements of the process conditions.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] The present disclosure provides a technique capable of efficiently adjusting the temperature of a processing container.

Means for Solving the Problems

[0006] According to one aspect of the present disclosure, a processing container having an internal space capable of processing a substrate, a temperature control furnace disposed around the processing container and heating the substrate accommodated in the internal space from the outside of the processing container, A substrate placement unit having a wafer boat that holds a plurality of the aforementioned substrates, and which moves relative to the processing container to open the internal space and allows the wafer boat to enter the internal space through an opening, being relatively movable with respect to the processing container, The aforementionedAn internal temperature control unit, positioned opposite the opening, supplies a temperature-controlled gas to the internal space for adjusting the temperature of the processing container, Control unit and Equipped with The internal temperature control unit has a unit operation unit for moving the internal temperature control unit, and the control unit controls the substrate placement unit to remove the wafer boat from the processing container, then controls the unit operation unit to move the internal temperature control unit to face the opening, and supplies the temperature control gas to the internal space. A heat treatment device is provided. [Effects of the Invention]

[0007] According to one embodiment, the temperature of the processing container can be efficiently adjusted. [Brief explanation of the drawing]

[0008] [Figure 1] This is a schematic diagram illustrating a configuration in which multiple substrates are arranged in a heat treatment apparatus according to one embodiment. [Figure 2] This is a schematic diagram illustrating the configuration of a heat treatment apparatus with an internal temperature control unit. [Figure 3] This flowchart shows a method for controlling the temperature of a heat treatment apparatus. [Figure 4] This graph shows the temperature change of the processing container with and without an internal temperature control unit. [Figure 5] Figure 5(A) is a schematic diagram illustrating the heat treatment apparatus according to the first modified example. Figure 5(B) is a schematic diagram illustrating the heat treatment apparatus according to the second modified example. [Figure 6] Figure 6(A) is a schematic diagram illustrating the heat treatment apparatus according to the third modified example. Figure 6(B) is a schematic diagram illustrating the heat treatment apparatus according to the fourth modified example. [Figure 7] Figure 7(A) is a schematic diagram showing the internal temperature control unit according to the fifth modified example. Figure 7(B) is a schematic diagram showing the internal temperature control unit according to the sixth modified example. Figure 7(C) is a schematic diagram showing the internal temperature control unit according to the seventh modified example. [Modes for carrying out the invention]

[0009] The following describes embodiments for implementing this disclosure with reference to the drawings. In each drawing, the same reference numerals are used for identical components, and redundant explanations may be omitted.

[0010] As shown in Figure 1, one embodiment of the heat treatment apparatus 1 is configured as a vertical treatment apparatus in which a plurality of substrates W are arranged vertically (up and down) and substrate processing such as film deposition is performed on each substrate W. Examples of substrates W include semiconductor substrates such as silicon wafers or compound semiconductor wafers, or glass substrates.

[0011] The heat treatment apparatus 1 comprises a processing container 10 for housing multiple substrates W, and a temperature-controlled furnace 50 arranged around the processing container 10. The heat treatment apparatus 1 also includes a control unit 90 for controlling the operation of each component of the heat treatment apparatus 1.

[0012] The processing container 10 is formed in a cylindrical shape that extends vertically. Inside the processing container 10, there is an internal space P in which multiple substrates W can be arranged vertically. The processing container 10 is composed of, for example, a cylindrical inner cylinder 11 with an open upper end (ceiling) and lower end, and a cylindrical outer cylinder 12 that is located outside the inner cylinder 11 and has a ceiling but an open lower end. The inner cylinder 11 and the outer cylinder 12 are made of a heat-resistant material such as quartz and have a double-walled structure arranged coaxially with each other. The processing container 10 is not limited to a double-walled structure; it may also be a single-walled structure or a multi-walled structure consisting of three or more cylinders.

[0013] The inner cylinder 11 has a diameter larger than the diameter of each substrate W, and an axial length (for example, greater than or equal to the height of each substrate W) that can accommodate each substrate W. Inside the inner cylinder 11, a processing space P1 is formed for processing each contained substrate W by discharging gas onto it. At the upper end of the inner cylinder 11, there is an opening 15 that communicates with the processing space P1 and allows gas to flow out into the flow space P2 between the inner cylinder 11 and the outer cylinder 12.

[0014] Further, at a predetermined circumferential position of the inner cylinder 11, a housing portion 13 for housing the gas nozzle 31 is formed along the vertical direction. As an example, the housing portion 13 is provided inside a convex portion 14 formed by protruding a part of the side wall of the inner cylinder 11 radially outward. Note that, at a predetermined position of the peripheral wall of the inner cylinder 11 (for example, on the opposite side of the housing portion 13 across the central axis), an opening that is long in the vertical direction and not shown may be formed.

[0015] The outer cylinder 12 has a diameter larger than that of the inner cylinder 11 and covers the inner cylinder 11 in a non-contact manner, constituting the outer shape of the processing container 10. The flow space P2 between the inner cylinder 11 and the outer cylinder 12 is formed above and on the side of the inner cylinder 11, and allows the gas that has moved upward to flow vertically downward. The internal space P of the processing container 10 is composed of the processing space P1 and the flow space P2.

[0016] The lower end of the processing container 10 is supported by a cylindrical manifold 17 made of stainless steel. For example, the manifold 17 has a manifold-side flange 17f at its upper end. The manifold-side flange 17f fixes and supports an outer-cylinder-side flange 12f formed at the lower end of the outer cylinder 12. A seal member 19 for hermetically sealing the outer cylinder 12 and the manifold 17 is provided between the outer-cylinder-side flange 12f and the manifold-side flange 17f.

[0017] In addition, the manifold 17 has an annular support portion 20 on the inner wall of the upper part. The support portion 20 protrudes radially inward and fixes and supports the lower end of the inner cylinder 11. A lid body 21 is detachably attached to the lower-end opening 17o of the manifold 17.

[0018] The lid body 21 is part of a substrate arrangement unit 22 that arranges a wafer boat 16 for holding each substrate W inside the processing container 10. The lid body 21 is formed of, for example, stainless steel and has a disc shape. The lid body 21 hermetically closes the lower-end opening 17o of the manifold 17 through a seal member 18 provided at the lower end of the manifold 17 in a state where each substrate W is arranged in the processing space P1.

[0019] A rotating shaft 24 passes through the center of the lid 21 via a magnetic fluid seal portion 23, rotatably supporting the wafer boat 16. The lower part of the rotating shaft 24 is supported by an arm 25A of a lifting mechanism 25, which is composed of a boat elevator or the like. The heat treatment apparatus 1 can move the lid 21 and the wafer boat 16 up and down together by raising and lowering the arm 25A of the lifting mechanism 25, thereby inserting and removing the wafer boat 16 into and out of the processing container 10.

[0020] A rotating plate 26 is provided at the upper end of the rotating shaft 24. The wafer boat 16, which holds each substrate W, is supported on this rotating plate 26 via an insulating unit 27. The wafer boat 16 is configured as a shelf capable of holding substrates W at predetermined intervals along the vertical direction. In the state where each substrate W is held by the wafer boat 16, the surfaces of each substrate W extend horizontally relative to each other.

[0021] The gas supply unit 30 is inserted into the processing container 10 via the manifold 17. The gas supply unit 30 introduces gases such as processing gas, purge gas, and cleaning gas into the processing space P1 of the inner cylinder 11. For example, the gas supply unit 30 has a gas nozzle 31 for introducing processing gas, purge gas, clean gas, etc. Although only one gas nozzle 31 is shown in Figure 1, the gas supply unit 30 may be equipped with multiple gas nozzles 31. For example, multiple gas nozzles 31 may be provided for each type of gas, such as processing gas, purge gas, and clean gas.

[0022] The gas nozzle 31 is a quartz injector tube that extends vertically within the inner cylinder 11 and is bent in an L-shape at its lower end to penetrate both the inside and outside of the manifold 17. The gas nozzle 31 is fixed and supported by the manifold 17. The gas nozzle 31 has multiple gas holes 31h at predetermined intervals along the vertical direction, and discharges gas horizontally through each gas hole 31h. The spacing between each gas hole 31h is set to be the same as, for example, the spacing between each substrate W supported on the wafer boat 16. The vertical position of each gas hole 31h is set to be located midway between adjacent substrates W in the vertical direction. This allows each gas hole 31h to smoothly circulate gas through the gaps between each substrate W.

[0023] The gas supply unit 30 supplies processing gas, purging gas, cleaning gas, etc., to the gas nozzle 31 inside the processing container 10 while controlling the flow rate outside the processing container 10. The processing gas should be selected appropriately depending on the type of film to be deposited on the substrate W. For example, when forming a silicon oxide film, the processing gas can be a silicon-containing gas such as dichlorosilane (DCS) gas and an oxidizing gas such as ozone (O3) gas. The purging gas can be nitrogen (N2) gas or argon (Ar) gas.

[0024] The gas exhaust section 40 exhausts the gas inside the processing container 10 to the outside. The gas supplied by the gas supply section 30 moves from the processing space P1 of the inner cylinder 11 to the flow space P2, and then is exhausted through the gas outlet 41. The gas outlet 41 is located on the upper side wall of the manifold 17 and is formed above the support section 20. The exhaust passage 42 of the gas exhaust section 40 is connected to the gas outlet 41. The gas exhaust section 40 is equipped with a pressure regulating valve 43 and a vacuum pump 44 in order from upstream to downstream of the exhaust passage 42. The gas exhaust section 40 adjusts the pressure inside the processing container 10 by sucking the gas inside the processing container 10 with the vacuum pump 44 and adjusting the flow rate of the exhausted gas with the pressure regulating valve 43.

[0025] Furthermore, a temperature sensor 80 for detecting the temperature inside the processing container 10 is provided inside the processing container 10 (for example, in the processing space P1 inside the inner cylinder 11). The temperature sensor 80 has a plurality of (five in this embodiment) thermometers 81 to 85 at different positions in the vertical direction. Thermocouples, resistance thermometers, etc., can be used for the plurality of thermometers 81 to 85. The temperature sensor 80 transmits the temperature detected by each of the plurality of thermometers 81 to 85 to the control unit 90.

[0026] On the other hand, the temperature control furnace 50 is formed in a cylindrical shape that covers the entire processing container 10 and heats and cools each substrate W housed in the processing container 10. Specifically, the temperature control furnace 50 has a cylindrical housing 51 with a ceiling and a heater 52 provided inside the housing 51.

[0027] The housing 51 is formed to be larger than the processing container 10, and its central axis is positioned approximately at the same location as the central axis of the processing container 10. For example, the housing 51 is attached to the upper surface of the base plate 54 to which the outer cylinder side flange 12f is fixed. The housing 51 is installed with a gap between it and the outer circumferential surface of the processing container 10, thereby forming a temperature-controlled space 53 between the outer circumferential surface of the processing container 10 and the inner circumferential surface of the housing 51. The temperature-controlled space 53 is provided to be continuous with the sides and top of the processing container 10.

[0028] The housing 51 includes an insulating section 51a with a ceiling that covers the entire processing container 10, and a reinforcing section 51b that reinforces the insulating section 51a on its outer periphery. That is, the side walls of the housing 51 have a laminated structure of the insulating section 51a and the reinforcing section 51b. The insulating section 51a is formed mainly from silica, alumina, etc., and suppresses heat transfer within the insulating section 51a. The reinforcing section 51b is formed from a metal such as stainless steel. Furthermore, in order to suppress the heat influence of the temperature control furnace 50 to the outside, the outer periphery of the reinforcing section 51b is covered with a water-cooling jacket (not shown).

[0029] The heater 52 of the temperature-controlled furnace 50 may be configured to heat multiple substrates W in the processing container 10. For example, an infrared heater that emits infrared rays to heat the processing container 10 can be used as the heater 52. In this case, the heater 52 is formed in a linear shape and is held on the inner circumferential surface of the heat insulating part 51a via a holding part (not shown) in a spiral, annular, arc-shaped, shank-shaped, or meandering manner.

[0030] Furthermore, the temperature-controlled furnace 50 is equipped with an external circulation unit 60 that circulates a cooling gas through the temperature-controlled space 53 in order to cool the processing container 10 during or after substrate processing. In this embodiment, the cooling gas circulating through the temperature-controlled space 53 is air, but it is not particularly limited, and for example, an inert gas may be used. Specifically, the external circulation unit 60 includes an external supply path 61 and a flow rate regulator 62 provided outside the temperature-controlled furnace 50, a supply path 63 provided in the reinforcement section 51b, and a supply hole 64 provided in the heat-insulating section 51a.

[0031] The external supply path 61 is connected to a blower (not shown), which supplies air to the temperature-controlled furnace 50. The external supply path 61 may also be equipped with a temperature control unit (heat exchanger, radiator, etc.) to adjust the temperature of the air flowing into the temperature-controlled space 53. The external supply path 61 branches into multiple branch paths 61a at an intermediate point. The multiple branch paths 61a are arranged vertically and connected to the reinforcement section 51b of the housing 51. Each branch path 61a divides the air supplied from the blower along the vertical direction.

[0032] A flow regulator 62 is provided for each of the multiple branch paths 61a and adjusts the flow rate of air flowing through each branch path 61a. The multiple flow regulators 62 can change the air flow rate independently of each other under the control of the control unit 90. Alternatively, the flow regulators 62 may be configured to allow the user to adjust the air flow rate manually, rather than relying on the control unit 90.

[0033] Multiple supply channels 63 are formed along the axial direction (vertical direction) of the reinforcing section 51b. In a plan view, each of the multiple supply channels 63 extends in an annular shape along the circumferential direction within the cylindrical reinforcing section 51b.

[0034] Each supply hole 64 is formed in a matrix along the axial (vertical) and circumferential directions of the heat insulating section 51a. Each supply hole 64, which is aligned in the axial direction, is positioned in the same axial position as each supply channel 63, which is aligned in the axial direction, and communicates with each supply channel 63 along the horizontal direction. Each supply hole 64 is formed to penetrate the heat insulating section 51a and ejects the air introduced into each supply channel 63 toward the temperature-controlled space 53.

[0035] Furthermore, the external circulation unit 60 is equipped with an exhaust port 65 on the ceiling of the housing 51 for discharging the air supplied into the temperature-controlled space 53. The exhaust port 65 is connected to an external exhaust path 66 provided outside the housing 51. The external exhaust path 66 exhausts the air from the temperature-controlled space 53 towards an appropriate waste disposal area. Alternatively, the external circulation unit 60 may be configured to circulate the air used in the temperature-controlled space 53 by connecting the external exhaust path 66 to an external supply path 61.

[0036] The control unit 90 of the heat treatment apparatus 1 can be a computer having a processor 91, memory 92, input / output interfaces (not shown), etc. The processor 91 is a combination of one or more of the following: CPU (Central Processing Unit), GPU (Graphics Processing Unit), ASIC (Application Specific Integrated Circuit), FPGA (Field-Programmable Gate Array), circuit consisting of multiple discrete semiconductors, etc. The memory 92 is a combination of volatile memory and non-volatile memory (for example, compact disc, DVD (Digital Versatile Disc), hard disk, flash memory, etc.) as appropriate.

[0037] Memory 92 stores the program for operating the heat treatment apparatus 1, the process conditions for substrate processing, and other recipes. The processor 91 controls each component of the heat treatment apparatus 1 by reading and executing the program from memory 92. The control unit 90 may be composed of a host computer or multiple client computers that communicate information via a network.

[0038] In this case, the heat treatment apparatus 1 can quickly raise the temperature of each substrate W in a short time by driving the heater 52 of the temperature control furnace 50 during substrate processing. On the other hand, when the heat treatment apparatus 1 lowers the temperature of the processing container 10, it lowers the temperature over a long period of time by circulating air through the external circulation unit 60. As a result of the time it takes to lower the temperature of the processing container 10, the overall throughput of the substrate processing deteriorates. In particular, in recent years, the heat treatment apparatus 1 is required to perform substrate processing, or preparation and post-processing of substrate processing, over a wide temperature range (for example, 80°C to 800°C), and to quickly adjust to the target temperature.

[0039] Therefore, as shown in Figure 2, the heat treatment apparatus 1 according to this embodiment includes an internal temperature control unit 70 for cooling the internal space P of the processing container 10. The internal temperature control unit 70 is a device that is attached to the processing container 10 when the substrate placement unit 22 having the wafer boat 16 is detached from the processing container 10.

[0040] The internal temperature control unit 70 includes an opposing member 71 positioned opposite the lower end opening 17o of the manifold 17, a temperature control gas supply pipe 72 fixed to the opposing member 71, and an external supply unit 73 connected to the temperature control gas supply pipe 72. Furthermore, the internal temperature control unit 70 includes a unit operating unit 79 that moves the opposing member 71 and the temperature control gas supply pipe 72 together relative to the processing container 10.

[0041] The temperature control gas supplied by the internal temperature control unit 70 is not particularly limited and may include, for example, air or inert gases (CO2, N2, Ar, etc.). In this embodiment, air is used as the temperature control gas, and the external supply unit 73 has a mechanism for collecting and pressurizing air from the room. The internal temperature control unit 70 may also include a temperature control unit (heat exchanger, radiator, etc.) that adjusts the temperature of the air before it is introduced into the internal space P of the processing container 10.

[0042] The opposing member 71 of the internal temperature control unit 70 is configured to be detachably attached to the lower end opening 17o of the manifold 17, similar to the cover 21 of the substrate placement unit 22. The opposing member 71 is moved by the unit operating unit 79 between a temperature control position TS that closes the lower end opening 17o of the manifold 17, and a retracted position (not shown) away from the lower end opening 17o in order to move the substrate placement unit 22 to the lower end opening 17o of the manifold 17. The opposing member 71 is formed of, for example, stainless steel and has a disc shape. The opposing member 71 can also hermetically close the lower end opening 17o of the manifold 17 via the sealing member 18.

[0043] The temperature control gas supply pipe 72 is formed, for example, from a rigid metal pipe and is attached to the center of the opposing member 71. The temperature control gas supply pipe 72 is formed to have a larger diameter than the gas nozzle 31 and has an internal flow path 72a that can circulate a large flow rate of air. The temperature control gas supply pipe 72 protrudes linearly from the upper side of the opposing member 71. At the upper end (protruding end) of the temperature control gas supply pipe 72, there is an outlet 72b that communicates with the flow path 72a and can eject air into the processing space P1. The temperature control gas supply pipe 72 may be provided at a position offset from the center of the opposing member 71 (the axis of the processing container 10).

[0044] The temperature control gas supply pipe 72 is bent in a roughly L-shape below the opposing member 71 and connected to the external supply unit 73. The external supply unit 73 includes a flow path 74 connected to the temperature control gas supply pipe 72. At least a portion of the flow path 74 is made of a flexible tube, allowing the opposing member 71 and the temperature control gas supply pipe 72 to move by the unit operating unit 79. In addition, the flow path 74 is equipped with a supply pump 75, an on / off valve 76, and a flow regulator 77 in order from upstream to downstream in the direction of air flow.

[0045] The supply pump 75 operates under the control of the control unit 90 to pump air downstream of the flow path 74. The on / off valve 76 switches the supply and cessation of air into the processing container 10 by opening and closing the flow path of the flow path 74 under the control of the control unit 90. The flow regulator 77 operates under the control of the control unit 90 to adjust the flow rate of air supplied into the processing container 10.

[0046] The flow rate of air supplied into the processing container 10 by the internal temperature control unit 70 (flow regulator 77) depends on the size of the processing container 10, but is preferably in the range of 100 SLM to 2000 SLM. In contrast, the flow rate of the processing gas and purge gas supplied into the processing container 10 via the gas nozzle 31 during substrate processing is, for example, about 10 SLM. Therefore, the amount of air supplied to the internal space P by the internal temperature control unit 70 is sufficiently larger than the amount of processing gas and purge gas supplied by the gas nozzle 31. This allows the heat treatment apparatus 1 to efficiently lower the temperature inside the processing container 10. For example, the amount of air supplied relative to the amount of processing gas and purge gas supplied should be set in the range of 5 to 200 times. If this ratio is less than 5 times, the temperature of the processing container 10 may not decrease easily, and if this ratio exceeds 200 times, it may not be possible to smoothly exhaust air from the processing container 10.

[0047] Furthermore, the unit operating section 79 of the internal temperature control unit 70 supports appropriate points on the opposing member 71 and the temperature control gas supply pipe 72, and moves these members together. The unit operating section 79 has a drive source such as a motor (not shown) and a drive transmission mechanism (not shown), and moves the opposing member 71 and the temperature control gas supply pipe 72 between the temperature control position TS and the retracted position in accordance with the driving force of the drive source.

[0048] The heat treatment apparatus 1 according to this embodiment is basically configured as described above, and its operation (temperature control method of the heat treatment apparatus 1) will be explained below with reference to Figure 3.

[0049] In preparing for substrate processing, the control unit 90 of the heat treatment apparatus 1 first moves the substrate placement unit 22 to load the wafer boat 16 holding each substrate W into the processing container 10 (step S1). As this loading occurs, the lid 21 closes the lower end opening 17o of the manifold 17, thereby sealing the internal space P of the processing container 10.

[0050] Subsequently, the heat treatment apparatus 1 performs substrate processing on each substrate W. For example, in the case of film deposition, the heat treatment apparatus 1 controls the heater 52 of the temperature control furnace 50 to raise it to a set temperature and performs heat processing to heat each substrate W in the processing container 10 to the temperature required for film deposition (step S2). Furthermore, in substrate processing, the heat treatment apparatus 1 controls the operation of the gas supply unit 30 to supply processing gas into the processing container 10 via the gas nozzle 31, while exhausting the processing gas from the processing container 10 with the gas exhaust unit 40. As a result, the heat treatment apparatus 1 fills the processing container 10 with processing gas while maintaining the pressure inside the processing container 10 at a set pressure, and a film is formed on the surface of each heated substrate W. In addition, the heat treatment apparatus 1 can perform lamination of multiple films or processing such as oxidation or nitriding of films by changing the temperature of each substrate W and the type of processing gas during substrate processing.

[0051] After substrate processing, the control unit 90 moves the substrate placement unit 22 to remove the wafer boat 16 from the processing container 10 (step S3). This leaves the lower end opening 17o of the processing container 10 (manifold 17) open. At this time, the temperature inside the processing container 10 decreases from the temperature during substrate processing as the heater 52 of the temperature control furnace 50 stops running. However, the decrease in temperature inside the processing container 10 proceeds slowly.

[0052] After the wafer boat 16 is retracted, the control unit 90 controls the unit operating unit 79 to move the internal temperature control unit 70 in order to perform the cooling process, and positions the opposing member 71 and the temperature control gas supply pipe 72 at the temperature control position TS (step S4). As a result of this positioning, the opposing member 71 closes the lower end opening 17o of the manifold 17, thereby sealing the internal space P of the processing container 10.

[0053] Subsequently, the control unit 90 controls the external supply unit 73 as a cooling process to supply air, which is the temperature control gas, from outside the processing container 10 to the internal space P of the processing container 10 through the temperature control gas supply pipe 72 (step S5). At this time, the external supply unit 73 continuously supplies a large flow rate (for example, 1000 SLM) of air into the processing container 10. As shown in Figure 2, the air supplied by the external supply unit 73 flows into the processing space P1 from the nozzle 72b of the temperature control gas supply pipe 72, and moves upward through the processing space P1 while cooling the inner cylinder 11. This air passes through the opening 15 of the inner cylinder 11 and moves to the upper flow space P2, and then moves downward in the flow space P2 on the side (outer circumference side of the outer cylinder 12). Furthermore, the air moves while cooling the inner cylinder 11 and the outer cylinder 12, and flows out into the exhaust passage 42 from the gas outlet 41 of the manifold 17.

[0054] Furthermore, the gas exhaust unit 40 exhausts the air used to cool the inner cylinder 11 and outer cylinder 12 via the exhaust passage 42. In this process, the gas exhaust unit 40 controls the operation of the pressure regulating valve 43 and the vacuum pump 44 in accordance with the amount of air supplied to the internal space P, thereby enabling stable exhaust of the gas from the processing container 10.

[0055] Furthermore, during the cooling process, the control unit 90 cools the outside of the processing container 10 using an external circulation unit 60 provided in the temperature-controlled furnace 50, in parallel with the cooling of the inside of the processing container 10 by the internal temperature-controlled unit 70. At this time, the control unit 90 supplies air, which is a cooling gas, from a blower via an external supply path 61, and adjusts the air flow rate with each flow rate regulator 62 to allow air to flow into the temperature-controlled space 53 from each supply hole 64. As a result, the processing container 10 is also cooled by the air circulating on the outside, further increasing the cooling efficiency. Note that the timing of cooling the outside of the processing container 10 (operation of the external circulation unit 60) is not limited to step S5, but may start from, for example, the time of removal of the wafer boat 16 in step S3. Alternatively, if there is a cooling step during heat treatment, air may be continuously supplied from step S2.

[0056] Returning to Figure 3, during the cooling process in which air is supplied to the internal space P, the control unit 90 determines whether the temperature inside the processing container 10 has reached a preset temperature (step S6). The temperature inside the internal space P can be determined using detection information from the temperature sensor 80. The control unit 90 then continues the cooling process until the temperature inside the processing container 10 reaches the preset temperature, and if the temperature inside the processing container 10 reaches the preset temperature (step S6: YES), it proceeds to step S7.

[0057] In step S7, the control unit 90 performs a process to stop the cooling process. At this time, the control unit 90 stops the supply of air by the external supply unit 73 and also stops the supply of air by the external circulation unit 60 of the temperature control furnace 50.

[0058] Subsequently, upon completion of the cooling process, the control unit 90 controls the unit operating unit 79 to detach the opposing member 71 and the temperature control gas supply pipe 72 from the lower end opening 17o of the manifold 17 (step S8). As a result, the heat treatment apparatus 1 is ready to load the wafer boat 16, which holds each substrate W to be processed next, into the processing container 10.

[0059] Next, the effects of supplying air into the processing container 10 from the internal temperature control unit 70 will be explained with reference to Figure 4. The upper graph in Figure 4 shows the time course and temperature change of the processing container 10 when no air is supplied into the processing container 10. The lower graph in Figure 4 shows the time course and temperature change of the processing container 10 when air is supplied into the processing container 10. However, in both cases, air is circulated through the temperature-controlled space 53 of the temperature-controlled furnace 50, and the processing container 10 is cooled from the outside.

[0060] As can be seen from Figure 4, the temperature of both the inner cylinder 11 and the outer cylinder 12 decreases from the time t0 when the cooling process begins. In this case, if air is not supplied into the processing container 10, the processing container 10 is cooled from the outside (outer cylinder 12) by the air supplied to the temperature-controlled space 53. For this reason, in the upper graph, the temperature of the inner cylinder 11 (see solid line in Figure 4) decreases more slowly and gradually than the temperature of the outer cylinder 12 (dotted line in Figure 4).

[0061] The temperature of the outer cylinder 12 is determined at time t relative to the set temperature for the cooling process (e.g., 80°C). out It reaches [a certain temperature]. Meanwhile, the temperature of the inner cylinder 11 is [a certain temperature]. out A point in time t that is significantly later than in This will bring the temperature down to the set temperature for the cooling process. In other words, if air is not supplied into the processing container 10, there will be a large variation in temperature between the inner cylinder 11 and the outer cylinder 12, resulting in a slower overall cooling of the processing container 10.

[0062] In contrast, the heat treatment apparatus 1 according to this embodiment can directly cool the inside of the processing container 10 by supplying air into the processing container 10 with the internal temperature control unit 70. Moreover, the heat treatment apparatus 1 can also cool the outside of the processing container 10 by supplying air to the temperature control space 53 of the external circulation section 60.

[0063] As a result, the temperature of the outer cylinder 12 reaches the set temperature at point t outIn contrast, the point at which the temperature of the inner cylinder 11 reaches the set temperature t in The two components are brought into close proximity. In other words, the heat treatment apparatus 1 can cool the inner cylinder 11 and the outer cylinder 12 to roughly the same temperature. Therefore, the heat treatment apparatus 1 can quickly adjust the temperature of the processing container 10 using the internal temperature control unit 70, significantly improving the overall throughput of the substrate processing. Furthermore, by promoting the uniformity of the temperatures between the inner cylinder 11 and the outer cylinder 12, the heat treatment apparatus 1 can accurately adjust the temperature of the entire processing container 10 to the target temperature.

[0064] It should be noted that the heat treatment apparatus 1 and heat treatment method of this disclosure are not limited to the embodiments described above, and various modifications are possible. For example, in the cooling process, the heat treatment apparatus 1 may be configured such that air is supplied into the treatment container 10 by the internal temperature control unit 70, while air is not supplied to the temperature-controlled space 53 by the external circulation unit 60.

[0065] Furthermore, the internal temperature control unit 70 is not particularly limited in its configuration, as long as it can supply temperature control gas to the internal space P. As an example of a configuration different from the above embodiment, the internal temperature control unit 70 may be configured to have a plurality of temperature control gas supply pipes 72. In this case, each temperature control gas supply pipe 72 may be arranged to circumfer near the inner surface of the inner cylinder 11. Also, the temperature control gas supply pipes 72 are not limited to a configuration in which temperature control gas is ejected in the vertical direction (along the axis of the inner cylinder 11), but may also eject temperature control gas in an inclined direction with respect to the vertical direction or in a tornado shape.

[0066] Furthermore, the heat treatment apparatus 1 is not limited to using the internal temperature control unit 70 for cooling the processing vessel 10, but may also be applied to raising the temperature of the processing vessel 10. For example, the internal temperature control unit 70 assists in raising the temperature of the processing vessel 10 by supplying a high-temperature temperature control gas into the processing vessel 10 while heating it with the heater 52 of the temperature control furnace 50. This allows the processing vessel 10 to be heated in a short time.

[0067] Below, we will describe several other modified heat treatment apparatuses 1 and heat treatment methods with reference to Figures 5 to 7.

[0068] The heat treatment apparatus 1A according to the first modified example shown in Figure 5(A) differs from the heat treatment apparatus 1 described above in that it performs cooling without the lower end of the manifold 17 and the opposing member 71 of the internal temperature control unit 70 coming into contact. That is, the heat treatment apparatus 1A sets the temperature control position TS' during the cooling process at a position spaced downward from the lower end of the manifold 17. The unit operating section 79 moves the opposing member 71 and the temperature control gas supply pipe 72 between this temperature control position TS' and the retracted position.

[0069] The opposing member 71 positioned at the temperature control position TS' forms a clearance C between itself and the lower end of the manifold 17. During the cooling process, a portion of the air supplied from the temperature control gas supply pipe 72 is discharged through the clearance C. In other words, the air ejected from the nozzle 72b of the temperature control gas supply pipe 72 moves upward at the center of the processing space P1 and is exhausted through the flow space P2 to the gas exhaust section 40. If the exhaust from the gas exhaust section 40 cannot keep up with the amount of air supplied, the air moves downward near the inner wall of the inner cylinder 11 and is discharged to the outside through the clearance C.

[0070] As a result, the heat treatment apparatus 1A can suppress the decrease in cooling efficiency caused by the increase in pressure in the treatment container 10 during the cooling process, and can perform the cooling process more efficiently. The configuration for exhausting the air supplied into the treatment container 10 to the outside during the cooling process is not limited to the above, and various configurations can be adopted. For example, by forming one or more holes in the opposing member 71, the air can be exhausted to the outside through these holes. Alternatively, the internal temperature control unit 70 may be configured without an opposing member 71, by moving only the temperature control gas supply pipe 72 and inserting it into the internal space P from the lower end opening 17o.

[0071] Furthermore, the heat treatment apparatus 1B according to the second modified example shown in Figure 5(B) is configured to have an exhaust pipe 78 (exhaust section) on the opposing member 71 in addition to the temperature control gas supply pipe 72. By applying the exhaust pipe 78 in this way, the heat treatment apparatus 1B can smoothly exhaust the air supplied into the treatment container 10 to the outside, similar to the clearance C. In addition, it is possible to guide the air whose temperature has risen in the treatment container 10 to an appropriate disposal section through the exhaust pipe 78 and an exhaust passage (not shown).

[0072] The heat treatment apparatus 1C, a third modified example shown in Figure 6(A), differs from the heat treatment apparatus 1 described above in that, in addition to supplying air into the processing container 10 from the temperature control gas supply pipe 72 during the cooling process, it also supplies temperature control gas (air or inert gas) from the gas supply unit 30. For example, the heat treatment apparatus 1C is equipped with a sub-temperature control gas supply pipe 32 that discharges temperature control gas, separate from the gas nozzle 31. The sub-temperature control gas supply pipe 32 has multiple discharge ports 32h in the vertically extending portion within the processing container 10, and the portion bent from the extended portion is fixed to the manifold 17.

[0073] As a result, the heat treatment apparatus 1C can supply air from both the temperature control gas supply pipe 72 and the sub-temperature control gas supply pipe 32 during the cooling process, enabling more efficient cooling of the inside of the processing container 10. In Figure 6(A), the configuration includes a sub-temperature control gas supply pipe 32 in addition to the gas nozzle 31, but the heat treatment apparatus 1C may also supply the temperature control gas using the gas nozzle 31.

[0074] The heat treatment apparatus 1D according to the fourth modified example shown in Figure 6(B) differs from the heat treatment apparatus 1 described above in that it is equipped with a telescopic internal supply pipe 100. This internal supply pipe 100 is short when moving, but extends vertically in the processing space P1 during the cooling process. The internal supply pipe 100 ejects air from a plurality of nozzles 100h provided on its side. As a result, the internal supply pipe 100 can blow air directly onto the inner cylinder 11, effectively reducing residual heat in the inner cylinder 11. Therefore, the heat treatment apparatus 1D can smoothly lower the temperature inside the processing container 10.

[0075] The internal temperature control unit 70A according to the fifth modified example shown in Figure 7(A) has a temperature control gas supply pipe 101 that ejects temperature control gas vertically upward near the inner circumferential surface of the inner cylinder 11. Specifically, the temperature control gas supply pipe 101 has an ejection pipe 101a that circulates in a C-shape on the same horizontal plane above the opposing member 71 (internal space P). Multiple ejection ports 101h that communicate with the internal flow path are provided along the circumferential direction of this ejection pipe 101a. As a result, the temperature control gas supply pipe 101 can effectively eject temperature control gas from the multiple ejection ports 101h along the inner circumferential surface of the inner cylinder 11 (parallel to the axis of the inner cylinder 11), making it possible to reduce residual heat in the inner cylinder 11 more smoothly.

[0076] The internal temperature control unit 70B according to the sixth modified example shown in Figure 7(B) is provided with a plurality (two) of temperature control gas supply pipes 102 that eject temperature control gas vertically upward near the inner circumferential surface of the inner cylinder 11. Each temperature control gas supply pipe 102 has an ejection pipe 102a that circulates in an arc shape on the same horizontal plane, and each ejection pipe 102a has a plurality of ejection ports 102h on its upper surface. Even in this case, the internal temperature control unit 70B can eject temperature control gas from the plurality of ejection ports 102h along the inner circumferential surface of the inner cylinder 11 (parallel to the axis of the inner cylinder 11), making it possible to smoothly reduce the temperature inside the processing container 10.

[0077] The internal temperature control unit 70C according to the seventh modified example shown in Figure 7(C) employs a temperature control gas supply pipe 103 equipped with a shower head 103a above the opposing member 71. Multiple nozzles 103h are provided on the upper surface of the shower head 103a, which eject the temperature control gas vertically upward. With the temperature control gas supply pipe 103 configured in this way, it is possible to evenly eject the temperature control gas to substantially the entire inside of the inner cylinder 11, and a uniform temperature reduction inside the processing container 10 can be expected.

[0078] The technical ideas and effects of this disclosure, as described in the embodiments above, are described below.

[0079] The heat treatment apparatus 1, 1A to 1D according to the first aspect of the present disclosure comprises: a processing container 10 having an internal space P capable of processing a substrate W; a temperature control furnace 50 arranged around the processing container 10 and heating the substrate W housed in the internal space P from outside the processing container 10; and an internal temperature control unit 70 that is movable relative to the processing container 10 and is positioned facing an opening (lower end opening 17o) that opens to the internal space P, and supplies a temperature control gas to the internal space P for adjusting the temperature of the processing container 10.

[0080] As described above, the heat treatment devices 1, 1A to 1D can efficiently adjust the temperature of the processing container 10 using the internal temperature control unit 70. For example, even when transitioning from a state where the processing container 10 is heated to a high temperature by the temperature control furnace 50 to a low temperature, the temperature of the processing container 10 can be reduced in a short time. As a result, the heat treatment devices 1, 1A to 1D can significantly improve the overall throughput of substrate processing.

[0081] Furthermore, the internal temperature control unit 70 includes an opposing member 71 that can face the opening (lower end opening 17o), and a temperature control gas supply pipe 72 fixed to the opposing member 71 and moving integrally with the opposing member 71 to inject temperature control gas into the internal space P. As a result, the internal temperature control unit 70 can smoothly supply a large flow rate of temperature control gas from the opening to the internal space P.

[0082] Furthermore, the temperature control gas supply pipe 72 has an outlet 72b that ejects the temperature control gas along the axis of the processing container 10 (parallel to the axis). This allows the internal temperature control unit 70 to eject the temperature control gas to the center of the internal space P, distributing the temperature control gas throughout the entire processing container 10 and promoting a uniform temperature distribution.

[0083] Furthermore, the internal temperature control unit 70 positions the opposing member 71 in a location that closes the opening (lower end opening 17o) as it moves relative to the unit, and sprays the temperature control gas while the opening is closed. As a result, the heat treatment devices 1, 1B to 1D can effectively utilize the temperature control gas supplied to the treatment container 10 and efficiently control the temperature of the treatment container 10.

[0084] Furthermore, the internal temperature control unit 70 positions the opposing member 71 at a distance from the opening (lower end opening 17o) as it moves relative to the unit, and sprays out the temperature control gas while a clearance C is formed between the opening and the opposing member 71. As a result, the heat treatment device 1A can exhaust the temperature control gas from the treatment container 10 through the clearance C, making it possible to supply a large flow rate of temperature control gas and adjust the temperature of the treatment container 10 in a shorter time.

[0085] Furthermore, the internal temperature control unit 70 is equipped with an exhaust section (exhaust pipe 78) on the opposing member 71 that can exhaust the gas from the internal space P. This allows the heat treatment apparatus 1B to exhaust the temperature control gas from the treatment container 10 through the exhaust section, and the temperature control gas can be efficiently disposed of through the exhaust section.

[0086] Furthermore, the internal temperature control unit 70 has a gas nozzle 31 that supplies a processing gas for processing the substrate W into the internal space P, and supplies a greater amount of temperature control gas to the internal space P than the amount of processing gas supplied. As a result, the heat treatment devices 1, 1A to 1D can control the temperature of the processing vessel in an even shorter time.

[0087] Furthermore, the heat treatment apparatus 1, 1A to 1D includes a manifold 17 that supports the processing container 10 at its lower end and has an opening (lower end opening 17o) at its lower end, and a substrate placement unit 22 that has a wafer boat 16 for holding multiple substrates W and moves relative to the manifold 17 to allow the wafer boat 16 to enter the internal space P through the opening. When adjusting the temperature of the processing container 10, the substrate placement unit 22 is retracted from the processing container 10 and the internal temperature control unit 70 is positioned facing the opening. In this way, the heat treatment apparatus 1, 1A to 1D can rapidly lower the temperature of the processing container, which has become hot, by replacing the substrate placement unit 22 with the internal temperature control unit 70 after heat treatment.

[0088] Furthermore, it has a sub-temperature control gas supply pipe supported by the manifold 17 that supplies temperature control gas to the internal space P separately from the internal temperature control unit 70. This allows the heat treatment apparatus 1C to control the temperature of the treatment container 10 even more quickly.

[0089] Furthermore, the device has a control unit 90 that controls the operation of the temperature control furnace 50 and the internal temperature control unit 70. After the heating of the substrate W by the temperature control furnace 50 is stopped, the control unit 90 supplies temperature control gas from the internal temperature control unit 70 to the internal space P to perform a cooling process to lower the temperature of the processing container 10. This allows the heat treatment devices 1, 1A to 1D to smoothly start the cooling process after the heat treatment.

[0090] Furthermore, the temperature-controlled furnace 50 forms a temperature-controlled space 53 between itself and the processing container 10, and has an external circulation unit 60 for circulating cooling gas through the temperature-controlled space 53. The control unit 90, during the cooling process, supplies temperature-controlled gas to the internal space P by the internal temperature-controlled unit 70 and circulates cooling gas through the external circulation unit 60. As a result, the heat treatment devices 1, 1A to 1D cool the processing container 10 from both the inside and the outside, allowing the processing container 10 to be cooled even more efficiently.

[0091] Furthermore, a second aspect of the present disclosure is a temperature control method for a heat treatment apparatus 1, 1A to 1D equipped with a processing container 10 having an internal space P capable of processing a substrate W, comprising: (A) heating the substrate W housed in the internal space P from the outside of the processing container 10 using a temperature control furnace 50 arranged around the processing container 10; (B) moving an internal temperature control unit 70 relative to the processing container 10 so that the internal temperature control unit 70 is positioned facing an opening (lower end opening 17o) that opens the internal space P; and (C) supplying a temperature control gas to the internal space P to adjust the temperature of the processing container 10 while the internal temperature control unit 70 is positioned facing the opening. As a result, the temperature control method can efficiently adjust the temperature of the processing container 10, thereby improving the overall throughput of the substrate processing.

[0092] The heat treatment apparatus 1, 1A to 1D and the heat treatment apparatus according to the embodiments disclosed herein are illustrative in all respects and are not restrictive. The embodiments can be modified and improved in various ways without departing from the scope and spirit of the appended claims. The matters described in the above embodiments can be otherwise configured and combined in a non-consistent manner. [Explanation of symbols]

[0093] 1. Heat treatment equipment (1A-1D) 10 Processing containers 17o Bottom opening 50 Temperature controlled furnace 70 Internal temperature control unit P interior space W board

Claims

1. A processing container having an internal space capable of processing substrates, A temperature control furnace is arranged around the processing container and heats the substrate housed in the internal space of the processing container from the outside. A substrate placement unit having a wafer boat that holds a plurality of the aforementioned substrates, and which moves relative to the processing container to open the internal space and allows the wafer boat to enter the internal space through an opening, An internal temperature control unit is movable relative to the processing container and, when positioned facing the opening, supplies a temperature-controlled gas to the internal space for adjusting the temperature of the processing container. It comprises a control unit and, The aforementioned internal temperature control unit has a unit operating unit that moves the internal temperature control unit, The control unit controls the substrate placement unit to remove the wafer boat from the processing container, then controls the unit operation unit to move the internal temperature control unit to face the opening, and supplies the temperature control gas to the internal space. Heat treatment equipment.

2. The aforementioned internal temperature control unit is A facing member that can face the aforementioned opening, Includes a temperature control gas supply pipe fixed to the opposing member and moving integrally with the opposing member to inject the temperature control gas into the internal space, The heat treatment apparatus according to claim 1.

3. The temperature control gas supply pipe has an outlet that ejects the temperature control gas along the axis of the processing container. The heat treatment apparatus according to claim 2.

4. The internal temperature control unit positions the opposing member in a position that closes the opening as it moves relative to the member, and ejects the temperature control gas while the opening is closed. The heat treatment apparatus according to claim 2.

5. A manifold that supports the processing container at its lower end and has the opening at its lower end, The manifold is supported by a sub-temperature control gas supply pipe that supplies the temperature control gas to the internal space separately from the internal temperature control unit, The heat treatment apparatus according to any one of claims 1 to 4.

6. The control unit, after stopping the heating of the substrate by the temperature control furnace, performs a cooling process to lower the temperature of the processing container by supplying the temperature control gas from the internal temperature control unit to the internal space. The heat treatment apparatus according to any one of claims 1 to 4.

7. The temperature-controlled furnace has a temperature-controlled space between it and the processing container, and has an external circulation section for circulating cooling gas through the temperature-controlled space, The control unit, in the cooling process, supplies the temperature-controlled gas to the internal space by the internal temperature-controlled unit and circulates the cooling gas to the temperature-controlled space by the external circulation unit. The heat treatment apparatus according to claim 6.

8. A processing container having an internal space capable of processing a substrate, A temperature control furnace is arranged around the processing container and heats the substrate housed in the internal space of the processing container from the outside. The processing container is movable relative to the processing container and is positioned opposite an opening that opens the internal space. The internal temperature control unit supplies a temperature-controlled gas to the internal space to adjust the temperature of the processing container. The aforementioned internal temperature control unit is A facing member that can face the aforementioned opening, Includes a temperature control gas supply pipe fixed to the opposing member and moving integrally with the opposing member to inject the temperature control gas into the internal space, Furthermore, the internal temperature control unit positions the opposing member at a distance from the opening as it moves relative to the opening, and ejects the temperature control gas while a clearance is formed between the member and the opening. Heat treatment equipment.

9. A processing container having an internal space capable of processing a substrate, A temperature control furnace is arranged around the processing container and heats the substrate housed in the internal space of the processing container from the outside. The processing container is movable relative to the processing container and is positioned opposite an opening that opens the internal space. The internal temperature control unit supplies a temperature-controlled gas to the internal space to adjust the temperature of the processing container. The aforementioned internal temperature control unit is A facing member that can face the aforementioned opening, Includes a temperature control gas supply pipe fixed to the opposing member and moving integrally with the opposing member to inject the temperature control gas into the internal space, The internal temperature control unit is provided with an exhaust section on the opposing member that can exhaust the gas from the internal space. Heat treatment equipment.

10. It has a gas nozzle that supplies a processing gas for processing the substrate into the internal space, The internal temperature control unit supplies a temperature control gas to the internal space in an amount greater than the amount of processing gas supplied. The heat treatment apparatus according to any one of claims 1 to 4, 8, or 9.

11. A manifold that supports the processing container at its lower end and has the opening at its lower end, The substrate placement unit includes a wafer boat that holds a plurality of the aforementioned substrates, and moves relative to the manifold to allow the wafer boat to enter the internal space through the opening, When adjusting the temperature of the processing container, the substrate placement unit is retracted from the processing container, and the internal temperature control unit is positioned opposite the opening. The heat treatment apparatus according to claim 8 or 9.

12. Supported by the manifold, it has a sub-temperature control gas supply pipe that supplies the temperature control gas to the internal space separately from the internal temperature control unit, The heat treatment apparatus according to claim 11.

13. The system includes a control unit that controls the operation of the temperature control furnace and the internal temperature control unit, The control unit, after stopping the heating of the substrate by the temperature-controlled furnace, performs a cooling process to lower the temperature of the processing container by supplying the temperature-controlled gas from the internal temperature-controlled unit to the internal space. The heat treatment apparatus according to claim 8 or 9.

14. The temperature-controlled furnace has a temperature-controlled space between it and the processing container, and also has an external circulation section for circulating cooling gas through the temperature-controlled space. The control unit, in the cooling process, supplies the temperature-controlled gas to the internal space by the internal temperature-controlled unit and circulates the cooling gas to the temperature-controlled space by the external circulation unit. The heat treatment apparatus according to claim 13.

15. A method for controlling the temperature of a heat treatment apparatus equipped with a processing vessel having an internal space capable of processing a substrate, (A) A step of moving a wafer boat holding a plurality of substrates relative to the processing container so that the wafer boat enters the internal space through an opening that opens the internal space, (B) After step (A), a step of heating the substrate housed in the internal space of the processing container from the outside of the processing container using a temperature-controlled furnace arranged around the processing container, (C) A step of removing the wafer boat from the processing container after step (B), (D) After step (C), move the internal temperature control unit relative to the processing container so that the internal temperature control unit is positioned facing the opening, (E) After step (D), a step of supplying a temperature-controlled gas for adjusting the temperature of the processing container from the internal temperature control unit to the internal space, Temperature adjustment method.

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