Substrate processing system and substrate processing method

Abstract

A substrate processing system (S) according to one aspect of the present disclosure comprises a processing fluid supply device (70), a substrate processing device (1), a supply line, and a temperature measurement unit. The processing fluid supply device (70) supplies a processing fluid that has been adjusted to a given temperature. The substrate processing device (1) processes a substrate using the processing fluid supplied from the processing fluid supply device (70). The supply line is connected between the processing fluid supply device (70) and the substrate processing device (1). The temperature measurement unit measures, in the supply line, at least one among the temperature of the processing fluid and the temperature of the supply line.

Description

Technical Field

[0001] The disclosed embodiments relate to a substrate processing system and a substrate processing method.

Background Art

[0002] Conventionally, a substrate processing apparatus is known which forms a liquid film for preventing drying on the surface of a semiconductor wafer (hereinafter referred to as a wafer), which is a substrate, and performs a drying process by bringing the wafer on which such a liquid film is formed into contact with a processing fluid in a supercritical state (see, for example, Patent Document 1).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a technique capable of stably processing a wafer with a processing fluid.

Means for Solving the Problems

[0005] A substrate processing system according to an aspect of the present disclosure includes a processing fluid supply device, a substrate processing device, a supply line, and a temperature measurement unit. The processing fluid supply device supplies a processing fluid adjusted to a given temperature. The substrate processing device processes a substrate with the processing fluid supplied from the processing fluid supply device. The supply line is connected between the processing fluid supply device and the substrate processing device. The temperature measurement unit measures at least one of the temperature of the processing fluid and the temperature of the supply line in the supply line.

Effects of the Invention

[0006] According to the present disclosure, a wafer can be stably processed with a processing fluid.

Brief Description of the Drawings

[0007] [Figure 1] Figure 1 shows an example of the configuration of a substrate processing apparatus according to an embodiment. [Figure 2] Figure 2 shows an example of the configuration of a liquid processing unit according to an embodiment. [Figure 3] Figure 3 is a schematic perspective view showing an example of the configuration of a drying unit according to the embodiment. [Figure 4] Figure 4 shows an example of the overall system configuration of the substrate processing system according to the embodiment. [Figure 5] Figure 5 shows an example of the piping configuration of the substrate processing system according to the embodiment of this invention. [Figure 6] Figure 6 shows an example of the piping configuration of a substrate processing system according to a modified example 1 of the embodiment. [Figure 7] Figure 7 shows an example of the operation of a substrate processing system according to a modified example 1 of the embodiment. [Figure 8] Figure 8 shows an example of the operation of a substrate processing system according to a modified example 1 of the embodiment. [Figure 9] Figure 9 shows an example of the piping configuration of a substrate processing system according to a modified example 2 of the embodiment. [Figure 10] Figure 10 shows an example of the piping configuration of a substrate processing system according to a modified example 3 of the embodiment. [Figure 11] Figure 11 shows an example of the piping configuration of a substrate processing system according to a modified example 4 of the embodiment. [Figure 12] Figure 12 is a flowchart showing the processing procedure for substrate processing according to the embodiment. [Figure 13] Figure 13 is a flowchart showing the processing procedure for substrate processing according to modified examples 1 to 4 of the embodiment. [Modes for carrying out the invention]

[0008] Hereinafter, embodiments of the substrate processing system and the substrate processing method disclosed in the present application will be described in detail with reference to the accompanying drawings. Note that the present disclosure is not limited by the embodiments shown below. Also, the drawings are schematic, and it is necessary to note that the dimensional relationships between elements, the ratios of each element, etc. may be different from reality. Furthermore, there may be parts where the dimensional relationships and ratios between the drawings are different from each other.

[0009] Conventionally, a substrate processing apparatus is known that forms a liquid film for preventing drying on the surface of a semiconductor wafer (hereinafter referred to as a wafer), which is a substrate, and performs a drying process by bringing the wafer on which such a liquid film is formed into contact with a processing fluid in a supercritical state.

[0010] On the other hand, when continuously drying a plurality of wafers in such a substrate processing apparatus, the first wafer after the start of processing may be in a different processing state from the wafers after the second wafer.

[0011] Therefore, it is expected to realize a technology that solves the above problems and can stably process wafers with a processing fluid.

[0012] <Configuration of Substrate Processing Apparatus> First, the configuration of the substrate processing apparatus 1 according to the embodiment will be described with reference to FIG. 1. FIG. 1 is a diagram showing a configuration example of the substrate processing apparatus 1 according to the embodiment. Hereinafter, in order to clarify the positional relationship, an X-axis, a Y-axis, and a Z-axis orthogonal to each other are defined, and the positive direction of the Z-axis is the vertically upward direction.

[0013] As shown in FIG. 1, the substrate processing apparatus 1 includes a loading / unloading station 2 and a processing station 3. The loading / unloading station 2 and the processing station 3 are provided adjacent to each other.

[0014] The loading / unloading station 2 includes a carrier mounting portion 11 and a transfer portion 12. A plurality of carriers C for horizontally accommodating a plurality of semiconductor wafers W (hereinafter referred to as "wafer W") are mounted on the carrier mounting portion 11.

[0015] The transfer unit 12 is provided adjacent to the carrier placement unit 11. Inside the transfer unit 12, a transfer device 13 and a delivery unit 14 are arranged.

[0016] The transfer device 13 includes a wafer holding mechanism for holding the wafer W. Further, the transfer device 13 is capable of moving in the horizontal and vertical directions and turning about a vertical axis, and transfers the wafer W between the carrier C and the delivery unit 14 using the wafer holding mechanism.

[0017] The processing station 3 is provided adjacent to the transfer unit 12. The processing station 3 includes a transfer block 4 and a plurality of processing blocks 5.

[0018] The transfer block 4 includes a transfer area 15 and a transfer device 16. The transfer area 15 is, for example, a rectangular parallelepiped region extending along the arrangement direction (X-axis direction) of the loading / unloading station 2 and the processing station 3. The transfer device 16 is arranged in the transfer area 15.

[0019] The transfer device 16 includes a wafer holding mechanism for holding the wafer W. Further, the transfer device 16 is capable of moving in the horizontal and vertical directions and turning about a vertical axis, and transfers the wafer W between the delivery unit 14 and the plurality of processing blocks 5 using the wafer holding mechanism.

[0020] The plurality of processing blocks 5 are arranged adjacent to the transfer area 15 on both sides of the transfer area 15. Specifically, the plurality of processing blocks 5 are arranged on one side (Y-axis positive direction side) and the other side (Y-axis negative direction side) of the transfer area 15 in the direction (Y-axis direction) orthogonal to the arrangement direction (X-axis direction) of the loading / unloading station 2 and the processing station 3.

[0021] Although not shown in the diagram, the multiple processing blocks 5 are arranged in multiple stages (for example, three stages) along the vertical direction. The wafer W is transported between the processing blocks 5 located in each stage and the transfer unit 14 by a single transport device 16 located in the transport block 4. Note that the number of stages of the multiple processing blocks 5 is not limited to three.

[0022] Each processing block 5 comprises a liquid processing unit 17, a drying unit 18, and a supply unit 19. The drying unit 18 is an example of a processing chamber.

[0023] The liquid treatment unit 17 performs a cleaning process to clean the upper surface of the wafer W, which is the pattern formation surface. The liquid treatment unit 17 also performs a liquid film formation process to form a liquid film on the upper surface of the wafer W after the cleaning process. The configuration of the liquid treatment unit 17 will be described later.

[0024] The drying unit 18 performs supercritical drying on the wafer W after the liquid film formation treatment. Specifically, the drying unit 18 dries the wafer W by bringing it into contact with a processing fluid in a supercritical state (hereinafter also referred to as "supercritical fluid"). The configuration of the drying unit 18 will be described later.

[0025] The supply unit 19 supplies the processing fluid to the drying unit 18. Specifically, the supply unit 19 comprises a group of supply equipment including a flow meter, flow regulator, back pressure valve, heater, etc., and a housing that accommodates the group of supply equipment. In this embodiment, the supply unit 19 supplies CO2 as the processing fluid to the drying unit 18. The configuration of the supply unit 19 will be described later.

[0026] Furthermore, a processing fluid supply device 70 (see Figure 4) that supplies the processing fluid is connected to the supply unit 19. In this embodiment, the processing fluid supply device 70 supplies CO2 as the processing fluid to the supply unit 19. Details of this processing fluid supply device 70 will be described later.

[0027] The liquid processing unit 17, drying unit 18, and supply unit 19 are arranged along the transport area 15 (i.e., along the X-axis). Of the liquid processing unit 17, drying unit 18, and supply unit 19, the liquid processing unit 17 is positioned closest to the loading / unloading station 2, and the supply unit 19 is positioned furthest from the loading / unloading station 2.

[0028] Thus, each processing block 5 is equipped with one liquid processing unit 17, one drying unit 18, and one supply unit 19. In other words, the substrate processing apparatus 1 is provided with the same number of liquid processing units 17, drying units 18, and supply units 19.

[0029] Furthermore, the drying unit 18 includes a processing area 18a where supercritical drying is performed, and a transfer area 18b where wafers W are transferred between the transport block 4 and the processing area 18a. These processing area 18a and transfer area 18b are arranged along the transport area 15.

[0030] Specifically, of the processing area 18a and the transfer area 18b, the transfer area 18b is located closer to the liquid processing unit 17 than the processing area 18a. In other words, in each processing block 5, the liquid processing unit 17, the transfer area 18b, the processing area 18a, and the supply unit 19 are arranged in this order along the transport area 15.

[0031] As shown in Figure 1, the substrate processing apparatus 1 includes a control device 6. The control device 6 is, for example, a computer and comprises a control unit 7 and a storage unit 8.

[0032] The control unit 7 includes a microcomputer having a CPU (Central Processing Unit), ROM (Read Only Memory), RAM (Random Access Memory), input / output ports, and various circuits. The CPU of this microcomputer reads and executes programs stored in the ROM to control the transport devices 13 and 16, the liquid processing unit 17, the drying unit 18, and the supply unit 19, etc.

[0033] Such a program may have been stored on a computer-readable storage medium and installed from that storage medium to the storage unit 8 of the control device 6. Examples of computer-readable storage mediums include hard disks (HDs), flexible disks (FDs), compact disks (CDs), magnetic optical disks (MOs), and memory cards.

[0034] The memory unit 8 is implemented by, for example, semiconductor memory elements such as RAM and flash memory, or storage devices such as hard disks and optical discs.

[0035] In the substrate processing apparatus 1 configured as described above, first, the transport device 13 of the loading / unloading station 2 takes out the wafer W from the carrier C placed on the carrier placement section 11 and places the removed wafer W on the transfer section 14. The wafer W placed on the transfer section 14 is then taken out of the transfer section 14 by the transport device 16 of the processing station 3 and transported to the liquid processing unit 17.

[0036] The wafer W, which has been transported to the liquid processing unit 17, undergoes cleaning and liquid film formation processing in the liquid processing unit 17, and is then transported out of the liquid processing unit 17 by the transport device 16. The wafer W that has been transported out of the liquid processing unit 17 is then transported to the drying unit 18 by the transport device 16, where it undergoes drying processing.

[0037] The wafers W that have been dried by the drying unit 18 are removed from the drying unit 18 by the transport device 16 and placed on the transfer unit 14. The processed wafers W placed on the transfer unit 14 are then returned to the carrier C of the carrier placement unit 11 by the transport device 13.

[0038] <Configuration of the liquid treatment unit> Next, the configuration of the liquid treatment unit 17 will be explained with reference to Figure 2. Figure 2 is a diagram showing an example of the configuration of the liquid treatment unit 17. The liquid treatment unit 17 is configured as a single-wafer cleaning device that cleans wafers W one by one by spin cleaning.

[0039] As shown in Figure 2, the liquid processing unit 17 holds the wafer W almost horizontally in a wafer holding mechanism 25 located within the outer chamber 23 that forms the processing space, and rotates the wafer W by rotating this wafer holding mechanism 25 around a vertical axis.

[0040] The liquid treatment unit 17 then inserts a nozzle arm 26 above the rotating wafer W and supplies a chemical solution and a rinsing solution in a predetermined order from a chemical solution nozzle 26a provided at the tip of the nozzle arm 26, thereby performing a cleaning treatment on the upper surface of the wafer W.

[0041] Furthermore, the liquid treatment unit 17 also has a chemical supply passage 25a formed inside the wafer holding mechanism 25. The chemicals and rinsing liquid supplied from this chemical supply passage 25a also clean the underside of the wafer W.

[0042] The cleaning process begins with the removal of particles and organic contaminants using an alkaline chemical solution, SC1 solution (a mixture of ammonia and hydrogen peroxide). Next, rinsing is performed using a rinse solution, deionized water (DIW).

[0043] Next, the native oxide film is removed using a diluted hydrofluoric acid solution (DHF), which is an acidic chemical, followed by rinsing with DIW.

[0044] The various chemical solutions described above are collected in the outer chamber 23 and the inner cup 24 located inside the outer chamber 23, and discharged from the drain port 23a at the bottom of the outer chamber 23 and the drain port 24a at the bottom of the inner cup 24. Furthermore, the atmosphere inside the outer chamber 23 is exhausted from the exhaust port 23b at the bottom of the outer chamber 23.

[0045] The liquid film formation process is performed after the rinsing process in the cleaning process. Specifically, the liquid treatment unit 17 rotates the wafer holding mechanism 25 while supplying liquid IPA (Isopropyl Alcohol) (hereinafter also referred to as "IPA liquid") to the upper and lower surfaces of the wafer W. This replaces the DIW remaining on both sides of the wafer W with IPA. After that, the liquid treatment unit 17 slowly stops rotating the wafer holding mechanism 25.

[0046] After the liquid film formation process is complete, the wafer W, with the liquid film of IPA liquid still formed on its upper surface, is transferred to the transport device 16 by a transfer mechanism (not shown) provided in the wafer holding mechanism 25 and unloaded from the liquid processing unit 17.

[0047] The liquid film formed on the wafer W prevents the pattern from collapsing due to the evaporation (vaporization) of the liquid on the upper surface of the wafer W during transport of the wafer W from the liquid processing unit 17 to the drying unit 18, or during the loading operation into the drying unit 18.

[0048] <Drying unit configuration> Next, the configuration of the drying unit 18 will be explained with reference to Figure 3. Figure 3 is a schematic perspective view showing an example of the configuration of the drying unit 18.

[0049] The drying unit 18 comprises a main body 31, a holding plate 32, and a lid member 33. The housing-shaped main body 31 has an opening 34 for loading and unloading wafers W. The holding plate 32 holds the wafer W to be processed horizontally. The lid member 33 supports the holding plate 32 and seals the opening 34 when the wafer W is loaded into the main body 31.

[0050] The main body 31 is a container with a processing space formed inside that can accommodate, for example, a wafer W with a diameter of 300 mm, and its walls are provided with supply ports 35, 36 and a discharge port 37. The supply ports 35, 36 and the discharge port 37 are connected to supply channels and discharge channels for circulating supercritical fluid to the drying unit 18, respectively.

[0051] The supply port 35 is connected to the side of the housing-shaped main body 31 opposite to the opening 34. The supply port 36 is connected to the bottom surface of the main body 31. Furthermore, the discharge port 37 is connected to the lower side of the opening 34. Although Figure 3 shows two supply ports 35 and 36 and one discharge port 37, the number of supply ports 35 and 36 and the discharge port 37 are not particularly limited.

[0052] Furthermore, the main body 31 is provided with fluid supply headers 38 and 39 and a fluid discharge header 40. The fluid supply headers 38 and 39 have multiple supply ports arranged in the longitudinal direction of the fluid supply headers 38 and 39, and the fluid discharge header 40 has multiple discharge ports arranged in the longitudinal direction of the fluid discharge header 40.

[0053] The fluid supply header 38 is connected to the supply port 35 and is located inside the housing-shaped main body 31, adjacent to the side opposite to the opening 34. The multiple supply ports formed alongside the fluid supply header 38 face the opening 34.

[0054] The fluid supply header 39 is connected to the supply port 36 and is located in the center of the bottom surface inside the housing-shaped main body 31. The multiple supply ports formed alongside the fluid supply header 39 face upward.

[0055] The fluid discharge header 40 is connected to the discharge port 37 and is located inside the housing-like main body 31, adjacent to the side facing the opening 34 and below the opening 34. The multiple discharge ports formed alongside the fluid discharge header 40 face upward.

[0056] Fluid supply headers 38 and 39 supply supercritical fluid into the main body 31. Fluid discharge header 40 guides the supercritical fluid inside the main body 31 to the outside and discharges it. The supercritical fluid discharged to the outside of the main body 31 via the fluid discharge header 40 contains IPA liquid dissolved in the supercritical fluid from the surface of the wafer W.

[0057] Within the drying unit 18, the IPA liquid between the patterns formed on the wafer W comes into contact with the supercritical fluid under high pressure (e.g., 16 MPa), gradually dissolving into the supercritical fluid, and the spaces between the patterns are gradually replaced by the supercritical fluid. Ultimately, the spaces between the patterns are filled solely with the supercritical fluid.

[0058] Then, after the IPA liquid is removed from between the patterns, the pressure inside the main body 31 is reduced from a high-pressure state to atmospheric pressure, causing the CO2 to change from a supercritical state to a gaseous state, and the spaces between the patterns are filled only with gas. In this way, the IPA liquid between the patterns is removed, and the drying process of the wafer W is completed.

[0059] In this case, the supercritical fluid has lower viscosity than a liquid (e.g., IPA liquid), and also has a high ability to dissolve liquids. Furthermore, there is no interface between the supercritical fluid and the liquid or gas in equilibrium. As a result, in drying treatment using a supercritical fluid, the liquid can be dried without being affected by surface tension. Therefore, according to this embodiment, it is possible to suppress the collapse of the pattern during the drying treatment.

[0060] In this embodiment, an example is shown in which IPA liquid is used as the liquid for preventing drying and supercritical CO2 is used as the processing fluid. However, a liquid other than IPA may be used as the liquid for preventing drying, and a fluid other than supercritical CO2 may be used as the processing fluid.

[0061] <Configuration of the substrate processing system> Next, the configuration of the substrate processing system S according to the embodiment will be described with reference to Figures 4 and 5. Figure 4 is a diagram showing an example of the overall system configuration of the substrate processing system S according to the embodiment. Note that each part of the substrate processing system S shown below can be controlled by the control unit 7.

[0062] The substrate processing system S comprises a processing fluid supply source 60, a processing fluid supply device 70, and a substrate processing device 1. The processing fluid supply device 70 supplies the processing fluid supplied from the processing fluid supply source 60 to the substrate processing device 1.

[0063] As shown in Figure 4, the substrate processing apparatus 1 has a plurality of drying units 18 and a plurality of supply units 19, and processes the wafer W (see Figure 5) in the drying unit 18 with a processing fluid supplied via the corresponding supply unit 19.

[0064] A processing fluid supply source 60 and a plurality of drying units 18 are connected by a processing fluid supply line 61, and processing fluid is supplied from the processing fluid supply source 60 to the plurality of drying units 18 via this processing fluid supply line 61.

[0065] The processing fluid supply line 61 includes a first supply line 62, a plurality of second supply lines 63 (see Figure 5), a plurality of third supply lines 64, and a plurality of fourth supply lines 65. The third supply line 64 is an example of a supply line, and the fourth supply line 65 is another example of a supply line.

[0066] The first supply line 62 supplies the processing fluid from the processing fluid supply source 60 to the processing fluid supply device 70. The first supply line 62 also branches into multiple second supply lines 63 within the processing fluid supply device 70.

[0067] The second supply line 63, the third supply line 64, and the fourth supply line 65 are connected in series in this order, supplying the processing fluid from the processing fluid supply device 70 to the drying unit 18 via the supply unit 19.

[0068] The second supply line 63 is located within the processing fluid supply device 70. The third supply line 64 is connected between the processing fluid supply device 70 and the substrate processing device 1. The fourth supply line 65 is located within the substrate processing device 1.

[0069] Figure 5 shows an example of the piping configuration of the substrate processing system S according to the embodiment. As shown in Figure 5, the processing fluid supply device 70 has a processing fluid supply line 61. This processing fluid supply line 61 includes a first supply line 62 and a plurality (two in the figure) of second supply lines 63.

[0070] The first supply line 62 supplies the processing fluid from the processing fluid supply source 60 to the processing fluid supply device 70. The first supply line 62 also branches into multiple second supply lines 63 within the processing fluid supply device 70.

[0071] The first supply line 62 is equipped with, in order from upstream to downstream, a valve 66, a check valve 67, a confluence 71, multiple (two in the diagram) confluence 72, a filter 73, a condenser 74, a tank 75, a pump 76, and a branch 77, with respect to the processing fluid supply source 60. The first supply line 62 is also equipped with, in order from upstream to downstream, a pressure sensor 78 and a branch 79, with respect to the branch 77.

[0072] Valve 66 is a valve that controls the on / off flow of the processing fluid. When open, it allows the processing fluid to flow to the downstream check valve 67, and when closed, it prevents the processing fluid from flowing to the downstream check valve 67. The check valve 67 prevents the processing fluid in the first supply line 62 from flowing back to the upstream side of the check valve 67.

[0073] The merging section 71 is where the first supply line 62 and the return line 90, which will be described later, merge. The merging section 72 is where the first supply line 62 and the return line 100, which will be described later, merge.

[0074] In the first supply line 62, the processing fluid is supplied in a gaseous state from the processing fluid supply source 60. Furthermore, the liquid processing fluid returned to the first supply line 62 from the multiple return lines 100 is converted from a liquid state to a gaseous state by the high-temperature gaseous processing fluid returned to the first supply line 62 from the return line 90. As a result, the processing fluid flows into the filter 73 in a gaseous state.

[0075] The filter 73 is, for example, a gas filter that filters the gaseous processing fluid flowing through the first supply line 62 and removes foreign matter contained in the processing fluid. By removing foreign matter from the processing fluid with such a filter 73, it is possible to suppress the generation of particles on the surface of the wafer W during the drying process of the wafer W using supercritical fluid.

[0076] The condenser 74 is connected, for example, to a cooling water supply unit (not shown) and can exchange heat between the cooling water and the gaseous processing fluid. This allows the condenser 74 to cool the gaseous processing fluid flowing through the first supply line 62, generating a liquid processing fluid at a given temperature lower than room temperature (for example, around 15°C).

[0077] Tank 75 stores the low-temperature liquid processing fluid generated in condenser 74. Pump 76 pumps the low-temperature liquid processing fluid stored in tank 75 to the downstream side of the first supply line 62. A return line 90, described later, branches off from branch 77.

[0078] The pressure sensor 78 measures the pressure of the processing fluid flowing through the first supply line 62. Multiple (two in the diagram) second supply lines 63 branch off from the branching section 79.

[0079] Each second supply line 63 is provided with an orifice 80, a branch 81, and a pressure sensor 82, in order from upstream to downstream, with respect to the branch 79. The orifice 80 reduces the flow velocity of the low-temperature liquid processing fluid flowing through the second supply line 63 and adjusts the pressure.

[0080] A return line 100 branches off from the branching section 81. The pressure sensor 82 measures the pressure of the processing fluid flowing through the second supply line 63.

[0081] The return line 100 returns the liquid processing fluid flowing through the second supply line 63 to the confluence 72 of the first supply line 62. By returning the processing fluid to the upstream side via the return line 100 in this way, the number of times it can be filtered can be increased, thereby improving the performance in removing foreign matter.

[0082] The return line 100 is provided with a back pressure valve 101 and a valve 102 in order from the upstream side, with reference to the branching section 81.

[0083] The back pressure valve 101 is configured to maintain the primary pressure at the set pressure by adjusting the valve opening to allow fluid to flow to the secondary side when the primary pressure of the return line 100 exceeds the set pressure. The valve opening and set pressure of the back pressure valve 101 can be changed at any time by the control unit 7 (see Figure 1).

[0084] Valve 102 is a valve that controls the on / off flow of the processing fluid. When open, it allows the processing fluid to flow to the downstream confluence 72, and when closed, it does not allow the processing fluid to flow to the downstream confluence 72.

[0085] The liquid processing fluid returned from the return line 100 then returns to the confluence 72 of the first supply line 62. The liquid processing fluid returned from the confluence 72 is then changed from a liquid state to a gaseous state by the high-temperature gaseous processing fluid returned from the confluence 71 and flowing through the first supply line 62.

[0086] The return line 90, which branches off from the branching section 77 of the first supply line 62, returns the liquid processing fluid flowing through the first supply line 62 to the confluence section 71 of the first supply line 62. By returning the processing fluid to the upstream side via the return line 90 in this way, the number of times it can be filtered can be increased, thereby improving the performance in removing foreign matter.

[0087] The return line 90 is equipped with a spiral heater 91, a back pressure valve 92, and a valve 93, in order from the upstream side, with respect to the branching section 77. The spiral heater 91 is wound around the return line 90 and heats the liquid processing fluid flowing through the return line 90 to generate a supercritical processing fluid.

[0088] The back pressure valve 92 is configured to maintain the primary pressure at the set pressure by adjusting the valve opening to allow fluid to flow to the secondary side when the primary pressure of the return line 90 exceeds the set pressure.

[0089] The back pressure valve 92 then reduces the pressure of the supercritical processing fluid flowing through the return line 90 to generate a gaseous processing fluid. The valve opening and set pressure of the back pressure valve 92 can be changed at any time by the control unit 7.

[0090] Valve 93 is a valve that controls the on / off flow of the processing fluid. When open, it allows the processing fluid to flow to the downstream confluence 71, and when closed, it does not allow the processing fluid to flow to the downstream confluence 71.

[0091] The high-temperature gaseous processed fluid generated by the back pressure valve 92 then returns to the confluence 71 of the first supply line 62 via the valve 93.

[0092] The processing fluid supply device 70 described above supplies low-temperature liquid processing fluid to multiple supply units 19 via the second supply line 63, the third supply line 64, and the fourth supply line 65. In other words, in this embodiment, the processing fluid is supplied from the processing fluid supply device 70 to the substrate processing device 1 in a liquid state, rather than in a gaseous or supercritical state.

[0093] This reduces problems caused by variations in length, even if there are variations in the distance between the processing fluid supply device 70 and each drying unit 18, i.e., the length of each third supply line 64.

[0094] The control unit 7 measures the pressure of the processing fluid supplied to the supply unit 19 from the second supply line 63, the third supply line 64, and the fourth supply line 65 using a pressure sensor 82 and controls it by the valve opening of the back pressure valve 101. For example, the control unit 7 increases the pressure of the processing fluid supplied to the supply unit 19 by increasing the set pressure on the primary side of the back pressure valve 101.

[0095] Furthermore, the control unit 7 reduces the pressure of the processing fluid supplied to the supply unit 19, for example, by lowering the set pressure on the primary side of the back pressure valve 101.

[0096] Similarly, the control unit 7 measures the pressure of the processing fluid supplied from the first supply line 62 to the multiple second supply lines 63 using a pressure sensor 78 and controls it by the valve opening of the back pressure valve 92. The control unit 7 then appropriately controls the valve opening of the back pressure valve 92 so that the measured value of the pressure sensor 78 remains constant.

[0097] Furthermore, in this embodiment, the spiral heater 91 causes the processing fluid to undergo a phase change from a liquid state to a supercritical state between the pump 76 and the back pressure valve 92. That is, the space between the pump 76 and the valve 41 or back pressure valve 92, which can be closed, is not filled with an incompressible liquid processing fluid, but rather a portion of it is a compressible supercritical processing fluid.

[0098] As a result, even when an incompressible liquid processing fluid is delivered by the pump 76 in the first supply line 62, the pulsations generated in the pump 76 can be absorbed at the supercritical region. Therefore, according to this embodiment, the influence of pulsations generated in the pump 76 can be reduced when delivering a liquid processing fluid by the pump 76.

[0099] In the substrate processing apparatus 1, the processing fluid flowing through the fourth supply line 65 is supplied to the drying unit 18 and discharged to the outside from the drying unit 18 via the discharge line 50.

[0100] The fourth supply line 65 in the substrate processing apparatus 1 is equipped with, in order from upstream, a valve 41, an orifice 42, a heater 43 and a temperature sensor 44, a valve 45, and a filter 46.

[0101] Valve 41 is a valve that controls the on / off flow of the processing fluid. When open, it allows the processing fluid to flow through the downstream orifice 42, and when closed, it does not allow the processing fluid to flow through the downstream orifice 42.

[0102] The orifice 42 plays a role in reducing the flow velocity of the low-temperature liquid processing fluid flowing through the fourth supply line 65 and regulating the pressure.

[0103] The heater 43 heats the liquid processing fluid flowing through the fourth supply line 65 to generate a supercritical processing fluid. The temperature sensor 44 detects the temperature of the supercritical processing fluid generated by the heater 43.

[0104] Valve 45 is a valve that controls the on / off flow of the processed fluid. When open, it allows the processed fluid to flow to the downstream filter 46, and when closed, it does not allow the processed fluid to flow to the downstream filter 46.

[0105] The filter 46 filters the supercritical processing fluid flowing through the fourth supply line 65, removing foreign matter contained in the processing fluid. By removing foreign matter from the processing fluid with the filter 46, it is possible to suppress the generation of particles on the wafer W surface during the drying process of the wafer W using the supercritical fluid.

[0106] The drying unit 18 is equipped with a temperature sensor 47. This temperature sensor 47 detects the temperature of the processing fluid filled inside the drying unit 18.

[0107] The discharge line 50 is equipped with, in order from upstream, a pressure sensor 51, a valve 52, a flow meter 53, and a back pressure valve 54. The pressure sensor 51 measures the pressure of the processed fluid flowing through the discharge line 50. Since the pressure sensor 51 is directly connected to the drying unit 18 via the discharge line 50, the pressure of the processed fluid measured by the pressure sensor 51 is approximately equal to the internal pressure of the processed fluid in the drying unit 18.

[0108] Valve 52 is a valve that controls the on / off flow of the processed fluid. When open, it allows the processed fluid to flow to the downstream drain DR, and when closed, it does not allow the processed fluid to flow to the downstream drain DR. Flow meter 53 measures the flow rate of the processed fluid flowing through the discharge line 50.

[0109] The back pressure valve 54 is configured to maintain the primary pressure at the set pressure by adjusting the valve opening to allow fluid to flow to the secondary side when the primary pressure of the discharge line 50 exceeds the set pressure. The valve opening and set pressure of the back pressure valve 54 can be changed at any time by the control unit 7.

[0110] In the drying unit 18 of the substrate processing apparatus 1, when wafers W are processed one by one in succession, for the second wafer W onward after the start of processing, a low-temperature liquid processing fluid is continuously supplied to the heater 43, which then transforms the processing fluid into a supercritical state. This supercritical processing fluid is then supplied to the drying unit 18, thereby performing the drying process on the wafers W.

[0111] On the other hand, for the first wafer W after processing begins, the liquid processing fluid accumulating in the third supply line 64 is supplied to the heater 43 by a valve 41 that remains closed until just before processing begins. Since the temperature of this liquid processing fluid accumulating in the third supply line 64 rises to room temperature during accumulating, its density is lower compared to when it is at a lower temperature.

[0112] Therefore, if the second wafer W is heated by the heater 43 under the same recipe conditions as the first wafer W and supplied to the drying unit 18, the density of the processing fluid flowing through the heater 43 will be different, resulting in different temperature and pressure behavior of the processing fluid compared to the second and subsequent wafers W.

[0113] As a result, the first wafer W and subsequent wafers W may have different processing states after the drying process.

[0114] Therefore, in this embodiment, as shown in Figure 5, a temperature sensor 110 is provided in the third supply line 64. The temperature sensor 110 is an example of a temperature measuring unit.

[0115] Before, for example, loading the wafer W into the drying unit 18, the control unit 7 uses the temperature sensor 110 to measure at least one of the temperature of the processing fluid in the third supply line 64 and the temperature of the third supply line 64 itself.

[0116] Then, if the temperature measured by the temperature sensor 110 is the same as the temperature of the liquid processing fluid produced by the processing fluid supply device 70 (for example, in the case of the second or subsequent wafers W), the control unit 7 supplies the processing fluid to the drying unit 18 under processing conditions according to the standard recipe.

[0117] On the other hand, if the temperature measured by the temperature sensor 110 differs from the temperature of the liquid processing fluid produced by the processing fluid supply device 70 (for example, in the case of the first wafer W), the control unit 7 changes the processing conditions from the standard recipe and then supplies the processing fluid to the drying unit 18.

[0118] For example, if the temperature measured by the temperature sensor 110 is 20°C or higher, the control unit 7 changes the processing conditions from the standard recipe and then supplies the processing fluid to the drying unit 18.

[0119] In this case, for example, the control unit 7 adjusts the valve opening of the back pressure valve 101 to set the pressure of the processing fluid supplied to the fourth supply line 65 via the second supply line 63 and the third supply line 64 to a higher level than the processing conditions specified in the standard recipe.

[0120] This makes it possible to equalize the density of the liquid processing fluid flowing through the heater 43. Therefore, even if the temperature measured by the temperature sensor 110 differs from the temperature of the liquid processing fluid generated by the processing fluid supply device 70, the temperature and pressure behavior of the processing fluid can be equalized between the first wafer W and the second and subsequent wafers W.

[0121] Therefore, according to this embodiment, stable drying can be performed with the processing fluid starting from the first wafer W after the start of processing.

[0122] In addition, in this embodiment, the control unit 7 may adjust the output of the heater 43 to change the temperature of the processing fluid heated by the heater 43 from the processing conditions specified in the standard recipe.

[0123] This makes it possible to equalize the density of the supercritical processing fluid supplied from the heater 43 to the drying unit 18. Therefore, even if the temperature measured by the temperature sensor 110 differs from the temperature of the liquid processing fluid generated in the processing fluid supply device 70, the temperature and pressure behavior of the processing fluid can be equalized between the first wafer W and the second and subsequent wafers W.

[0124] Therefore, according to this embodiment, stable drying can be performed with the processing fluid starting from the first wafer W after the start of processing.

[0125] Furthermore, in this embodiment, the control unit 7 may measure the temperature with the temperature sensor 110 before loading the wafer W into the drying unit 18. This allows the temperature of the processing fluid in the third supply line 64 and the temperature of the third supply line 64 itself to be known in advance, thereby enabling the subsequent drying process of the wafer W to be carried out smoothly.

[0126] Furthermore, the technology disclosed herein is not limited to measuring the temperature with the temperature sensor 110 before loading the wafer W into the drying unit 18, but may also be measured with the temperature sensor 110 when loading the wafer W into the drying unit 18, or after loading the wafer W into the drying unit 18.

[0127] <Example 1> Next, various modifications of the embodiment will be described with reference to Figures 6 to 11. Figure 6 is a diagram showing an example of the piping configuration of the substrate processing system S according to modification 1 of the embodiment.

[0128] As shown in Figure 6, in the substrate processing system S according to Modification 1, the configuration of the processing fluid supply device 70 and the third supply line 64 differs from that of the embodiment described above. Therefore, in the following examples, the same reference numerals are used for parts that are the same as those in the embodiments already described, and detailed explanations are omitted.

[0129] Specifically, in Modification 1, a branching section 120 is provided in the third supply line 64. This branching section 120 is located, for example, near the substrate processing device 1 in the third supply line 64.

[0130] Furthermore, a return line 130 branches off from the branching section 120. The return line 130 is an example of a temperature maintenance mechanism. The return line 130 merges with the junction 104 located upstream of the back pressure valve 101 in the return line 100.

[0131] A valve 131 is provided in the return line 130. The valve 131 is a valve that controls the on and off of the flow of the processed fluid. When open, it allows the processed fluid to flow to the downstream confluence 104, and when closed, it does not allow the processed fluid to flow to the downstream confluence 104.

[0132] A valve 103 is provided upstream of the confluence 104 in the return line 100. The valve 103 is a valve that controls the on and off of the flow of the processed fluid. When open, it allows the processed fluid to flow to the downstream confluence 104, and when closed, it does not allow the processed fluid to flow to the downstream confluence 104.

[0133] In the modified example 1, the temperature sensor 110 that was provided in the third supply line 64 in the above embodiment may also be provided.

[0134] Figure 7 is a diagram showing an example of the operation of the substrate processing system S according to a modified example 1 of the embodiment, and illustrates the flow of the processing fluid when drying a wafer W.

[0135] As shown by the thick dashed line in Figure 7, in Modification 1, when the wafer W is being dried, the low-temperature liquid processing fluid pumped by the pump 76 reaches the valve 41 of the fourth supply line 65 via the second supply line 63 and the third supply line 64.

[0136] Furthermore, when the wafer W is being dried, the valve 41 is controlled to be open, so the processing fluid is supplied to the drying unit 18 via the fourth supply line 65.

[0137] In the modified example 1, the liquid processing fluid returns to the confluence 71 via the return line 90. Also, since the valve 103 is controlled to be open, the liquid processing fluid returns to the confluence 72 from the branch 81 via the return line 100. In this case, the valve 131 of the return line 130 is controlled to be closed, so no processing fluid flows through the return line 130.

[0138] As shown in Figure 7, in Modification 1, when the wafer W is being dried, the processing fluid in a low-temperature liquid state continues to flow through the third supply line 64, so there is no temperature rise of the processing fluid due to stagnation in the third supply line 64.

[0139] Figure 8 is a diagram showing an example of the operation of the substrate processing system S according to a modified example 1 of the embodiment, illustrating the flow of the processing fluid when the wafer W is not being dried and the drying unit 18 is in a standby state.

[0140] When the drying unit 18 is in standby mode, as shown by the thick dashed line in Figure 8, the low-temperature liquid processing fluid pumped by the pump 76 reaches the branch 120 of the third supply line 64 via the second supply line 63 and the third supply line 64.

[0141] On the other hand, since the drying unit 18 is in standby mode, the valve 41 of the substrate processing apparatus 1 is controlled to be closed, and no liquid processing fluid flows into the fourth supply line 65.

[0142] On the other hand, in the modified example 1, by controlling the valve 131 of the return line 130 to the open state, the low-temperature liquid processing fluid that has reached the branching point 120 of the third supply line 64 can be returned to the confluence point 72 via the return line 130 and the return line 100. In this case, the valve 103 of the return line 100 is controlled to the closed state.

[0143] Thus, in the modified example 1, by providing a return line 130, the flow of the processing fluid in a low-temperature liquid state can be maintained in the third supply line 64 even when the drying unit 18 is in a standby state.

[0144] This prevents the liquid processing fluid from accumulating in the third supply line 64, thereby ensuring that the temperature of the processing fluid located in the third supply line 64 is the same for the first wafer W after processing starts and for subsequent wafers W.

[0145] Therefore, according to Modification 1, the temperature and pressure behavior of the processing fluid can be made uniform between the first wafer W after processing starts and the second and subsequent wafers W, so that stable drying can be performed with the processing fluid starting from the first wafer W after processing starts.

[0146] Furthermore, in Modification 1, the return line 130 is preferably connected to the vicinity of the substrate processing device 1 in the third supply line 64. That is, in Modification 1, the branching section 120 is preferably located near the substrate processing device 1 in the third supply line 64.

[0147] This allows most of the liquid processing fluid located in the third supply line 64 to be returned via the return line 130 when the drying unit 18 is in standby mode, thereby preventing the majority of the liquid processing fluid located in the third supply line 64 from accumulating.

[0148] In other words, in the modified example 1, the temperature of the processing fluid located in the third supply line 64 can be precisely matched between the first wafer W after processing starts and the second and subsequent wafers W.

[0149] Therefore, according to Modification 1, the temperature and pressure behavior of the processing fluid can be precisely matched between the first wafer W after processing starts and the second and subsequent wafers W, allowing for more stable drying processing with the processing fluid starting from the first wafer W after processing starts.

[0150] <Modification 2> Figure 9 shows an example of the piping configuration of a substrate processing system S according to a modified example 2 of the embodiment. As shown in Figure 9, in the substrate processing system S according to modified example 2, the branching section 120 is located in the fourth supply line 65 within the substrate processing apparatus 1, rather than in the third supply line 64.

[0151] Specifically, in modification 2, the branching section 120 is located upstream of the valve 41 in the fourth supply line 65.

[0152] This also allows the flow of the low-temperature liquid processing fluid in the third supply line 64 to be maintained in the third supply line 64, even when the drying unit 18 is in standby mode, by providing the return line 130, similar to the modification 1 described above.

[0153] In other words, in the modified example 2, it is possible to suppress the accumulation of the low-temperature liquid processing fluid in the third supply line 64, thereby making it possible to equalize the temperature of the processing fluid located in the third supply line 64 between the first wafer W and the second and subsequent wafers W after the start of processing.

[0154] Therefore, according to Modification 2, the temperature and pressure behavior of the processing fluid can be made uniform between the first wafer W after processing starts and the second and subsequent wafers W, so that stable drying can be performed with the processing fluid starting from the first wafer W after processing starts.

[0155] Furthermore, in the modified example 2, the branching section 120 is located in the fourth supply line 65 within the substrate processing apparatus 1, so that when the drying unit 18 is in standby mode, all the liquid processing fluid located in the third supply line 64 can be returned via the return line 130.

[0156] This prevents the stagnation of all liquid processing fluids located in the third supply line 64, thereby enabling the temperature of the processing fluids located in the third supply line 64 to be precisely matched between the first wafer W and subsequent wafers W after the start of processing.

[0157] Therefore, according to Modification 2, the temperature and pressure behavior of the processing fluid can be precisely matched between the first wafer W after processing starts and the second and subsequent wafers W, allowing for more stable drying processing with the processing fluid starting from the first wafer W after processing starts.

[0158] <Variation 3> Figure 10 shows an example of the piping configuration of a substrate processing system S according to the third modified embodiment. As shown in Figure 10, in the substrate processing system S according to the third modified embodiment, the branch section 120 is located between the heater 43 and the valve 45 in the fourth supply line 65.

[0159] This also allows the flow of the low-temperature liquid processing fluid in the third supply line 64 to be maintained in the third supply line 64, even when the drying unit 18 is in standby mode, by providing the return line 130, similar to the modification 1 described above.

[0160] In other words, in the modified example 3, it is possible to suppress the accumulation of the low-temperature liquid processing fluid in the third supply line 64, thereby making it possible to equalize the temperature of the processing fluid located in the third supply line 64 between the first wafer W and the second and subsequent wafers W after the start of processing.

[0161] Therefore, according to Modification 3, the temperature and pressure behavior of the processing fluid can be made uniform between the first wafer W after processing starts and the second and subsequent wafers W, so that stable drying can be performed with the processing fluid starting from the first wafer W after processing starts.

[0162] Furthermore, in the third modified example, the branching section 120 is located in the fourth supply line 65 within the substrate processing apparatus 1, so that when the drying unit 18 is in standby mode, all the liquid processing fluid located in the third supply line 64 can be returned via the return line 130.

[0163] This prevents the stagnation of all liquid processing fluids located in the third supply line 64, thereby enabling the temperature of the processing fluids located in the third supply line 64 to be precisely matched between the first wafer W and subsequent wafers W after the start of processing.

[0164] Therefore, according to Modification 3, the temperature and pressure behavior of the processing fluid can be precisely matched between the first wafer W after processing starts and the second and subsequent wafers W, allowing for more stable drying processing with the processing fluid starting from the first wafer W after processing starts.

[0165] In modification 3, when the drying unit 18 is in standby mode, valve 41 is controlled to be in the open state instead of the closed state, and valve 45 is controlled to be in the closed state.

[0166] <Modification 4> In the modified examples 1 to 3 described so far, an example has been shown in which a return line 130 is used as a temperature maintenance mechanism to maintain the temperature of the processing fluid in the third supply line 64, but the present disclosure is not limited to such examples.

[0167] Figure 11 shows an example of the piping configuration of a substrate processing system S according to Modification 4 of the embodiment. As shown in Figure 11, in the substrate processing system S according to Modification 4, a cooling mechanism 140 is provided to cool the third supply line 64 as a temperature maintenance mechanism to maintain the temperature of the processing fluid in the third supply line 64.

[0168] Such a cooling mechanism 140 is, for example, a chiller, and is positioned to surround the third supply line 64. The cooling mechanism 140 maintains the temperature of the processing fluid located in the third supply line 64 at a given temperature (the temperature of the liquid processing fluid generated in the processing fluid supply device 70).

[0169] This also makes it possible to equalize the temperature of the processing fluid located in the third supply line 64 between the first wafer W after processing starts and the second and subsequent wafers W.

[0170] Therefore, according to Modification 4, the temperature and pressure behavior of the processing fluid can be made uniform between the first wafer W after processing starts and the second and subsequent wafers W, so that stable drying can be performed with the processing fluid starting from the first wafer W after processing starts.

[0171] The substrate processing system S according to this embodiment includes a processing fluid supply device 70, a substrate processing device 1, a supply line (third supply line 64), and a temperature measuring unit (temperature sensor 110). The processing fluid supply device 70 supplies processing fluid adjusted to a given temperature. The substrate processing device 1 processes the substrate (wafer W) with the processing fluid supplied from the processing fluid supply device 70. The supply line (third supply line 64) is connected between the processing fluid supply device 70 and the substrate processing device 1. The temperature measuring unit (temperature sensor 110) measures at least one of the temperature of the processing fluid and the temperature of the supply line (third supply line 64) in the supply line (third supply line 64). This enables stable drying processing with the processing fluid from the first wafer W after processing has started.

[0172] Furthermore, the substrate processing system S according to the embodiment further includes a control unit 7 that controls each part. The control unit 7 also changes at least one of the pressure of the processing fluid supplied from the processing fluid supply device 70 and the temperature of the processing fluid heated in the substrate processing apparatus 1 from a standard recipe when the temperature measured by the temperature measuring unit (temperature sensor 110) differs from a given temperature. This enables stable drying processing with the processing fluid from the first wafer W after processing has started.

[0173] Furthermore, in the substrate processing system S according to the embodiment, the control unit 7 measures the temperature using a temperature measuring unit (temperature sensor 110) before the substrate (wafer W) is brought into the processing chamber (drying unit 18) in the substrate processing apparatus 1. This enables the drying process of the wafer W to be carried out smoothly.

[0174] Furthermore, the substrate processing system S according to the embodiment includes a processing fluid supply device 70, a substrate processing device 1, a supply line (third supply line 64), and a temperature maintenance mechanism (return line 130, cooling mechanism 140). The processing fluid supply device 70 supplies processing fluid adjusted to a given temperature. The substrate processing device 1 processes the substrate (wafer W) with the processing fluid supplied from the processing fluid supply device 70. The supply line (third supply line 64) is connected between the processing fluid supply device 70 and the substrate processing device 1. The temperature maintenance mechanism (return line 130, cooling mechanism 140) maintains the temperature of the processing fluid flowing through the supply line (third supply line 64) at a given temperature. This allows for stable drying processing with the processing fluid from the first wafer W after processing has started.

[0175] Furthermore, in the substrate processing system S according to this embodiment, the temperature maintenance mechanism is a return line 130 that returns the processing fluid flowing through the supply line (third supply line 64) back to the processing fluid supply device 70. This allows for stable drying of the wafer W from the first wafer after processing has started using the processing fluid.

[0176] Furthermore, the substrate processing system S according to this embodiment further includes a control unit 7 that controls each part. The control unit 7 also returns the processing fluid flowing through the supply line (third supply line 64) to the processing fluid supply device 70 via the return line 130 when a substrate (wafer W) has not been loaded into the processing chamber (drying unit 18) in the substrate processing apparatus 1. This enables stable drying processing with the processing fluid from the first wafer W after processing has started.

[0177] Furthermore, in the substrate processing system S according to this embodiment, the return line 130 is connected to the vicinity of the substrate processing apparatus 1 in the supply line (third supply line 64). This allows for more stable drying processing with the processing fluid starting from the first wafer W after processing has begun.

[0178] Furthermore, in the substrate processing system S according to the embodiment, the substrate processing apparatus 1 includes a processing chamber (drying unit 18), another supply line (fourth supply line 65), and a valve 41. The processing chamber (drying unit 18) processes the substrate (wafer W). The other supply line (fourth supply line 65) is connected between the supply line (third supply line 64) and the processing chamber (drying unit 18). The valve 41 is provided upstream of the other supply line (fourth supply line 65). The return line 130 is connected upstream of the valve 41 in the other supply line (fourth supply line 65). This allows for more stable drying processing with the processing fluid starting from the first wafer W after processing has begun.

[0179] Furthermore, in the substrate processing system S according to the embodiment, the substrate processing apparatus 1 includes a processing chamber (drying unit 18), another supply line (fourth supply line 65), and a heating unit (heater 43). The processing chamber (drying unit 18) processes the substrate (wafer W). The other supply line (fourth supply line 65) is connected between the supply line (third supply line 64) and the processing chamber (drying unit 18). The heating unit (heater 43) is provided on the other supply line (fourth supply line 65) and heats the processing fluid. The return line 130 is connected downstream of the heating unit (heater 43). This allows for more stable drying processing with the processing fluid starting from the first wafer W after processing has begun.

[0180] Furthermore, in the substrate processing system S according to this embodiment, the processing fluid supply device 70 supplies a processing fluid in a liquid state at a temperature lower than room temperature to the substrate processing device 1, and the substrate processing device 1 processes the substrate (wafer W) with the processing fluid in a supercritical state. As a result, even if there are variations in the lengths of the multiple third supply lines 64, problems caused by such variations in length can be reduced.

[0181] <Procedure for processing circuit boards> Next, the substrate processing procedure according to the embodiment will be described with reference to Figures 12 and 13. Figure 12 is a flowchart showing the substrate processing procedure according to the embodiment.

[0182] In the substrate processing according to this embodiment, first, the control unit 7 controls the temperature sensor 110 to measure the temperature of the third supply line 64, in this case, at least one of the temperature of the processing fluid in the third supply line 64 and the temperature of the third supply line 64 itself (step S101).

[0183] Then, if the temperature measured by the temperature sensor 110 is not different from the given temperature (the temperature of the liquid processing fluid generated by the processing fluid supply device 70) (step S102, No), the control unit 7 reads the reference recipe (step S103).

[0184] On the other hand, if the temperature measured by the temperature sensor 110 is different from a given temperature (the temperature of the liquid processing fluid generated by the processing fluid supply device 70) (step S102, Yes), the control unit 7 changes the reference recipe (step S104).

[0185] Next, the control unit 7 controls the substrate processing apparatus 1 and other components to transport the wafer W on which the IPA liquid film has been formed into the drying unit 18 (step S105).

[0186] Next, the control unit 7 controls the processing fluid supply device 70 and the substrate processing device 1 to supply the processing fluid in a supercritical state to the drying unit 18 (step S106). Then, the control unit 7 performs the drying process on the wafer W in the drying unit 18 (step S107).

[0187] Finally, the control unit 7 removes the wafer W, which has finished drying, from the drying unit 18 (step S108), and completes the series of substrate processing.

[0188] Figure 13 is a flowchart showing the processing procedure for substrate processing according to modified examples 1 to 4 of the embodiment.

[0189] In the substrate processing according to modified examples 1 to 4, first, the control unit 7 controls the return line 130, the cooling mechanism 140, etc., to maintain the temperature of the processing fluid in the third supply line 64 at a given temperature (the temperature of the liquid processing fluid generated by the processing fluid supply device 70) (step S201).

[0190] Next, the control unit 7 reads the reference recipe (step S202). Then, the control unit 7 controls the substrate processing apparatus 1 and the like to load the wafer W, on which the IPA liquid film has been formed, into the drying unit 18 (step S203).

[0191] Next, the control unit 7 controls the processing fluid supply device 70 and the substrate processing device 1 to supply the processing fluid in a supercritical state to the drying unit 18 (step S204). Then, the control unit 7 performs the drying process on the wafer W in the drying unit 18 (step S205).

[0192] Finally, the control unit 7 removes the wafer W, which has finished drying, from the drying unit 18 (step S206), and completes the series of substrate processing.

[0193] The substrate processing method according to the embodiment includes a processing fluid supply step (step S106), a substrate processing step (step S107), and a temperature measurement step (step S101). The processing fluid supply step (step S106) supplies a processing fluid adjusted to a given temperature. The substrate processing step (step S107) processes the substrate (wafer W) with the processing fluid supplied in the processing fluid supply step (step S106). The temperature measurement step (step S101) measures at least one of the temperature of the processing fluid and the temperature of the supply line (third supply line 64) in the supply line (third supply line 64). The supply line (third supply line 64) is connected between the processing fluid supply device 70 that performs the processing fluid supply step (step S106) and the substrate processing device 1 that performs the substrate processing step (step S107). This allows for stable drying processing with the processing fluid from the first wafer W after processing has started.

[0194] Furthermore, the substrate processing method according to the embodiment includes a processing fluid supply step (step S204), a substrate processing step (step S205), and a temperature maintenance step (step S201). The processing fluid supply step (step S204) supplies a processing fluid adjusted to a given temperature. The substrate processing step (step S205) processes the substrate (wafer W) with the processing fluid supplied by the processing fluid supply step (step S204). The temperature maintenance step (step S201) maintains the temperature of the processing fluid flowing through the supply line (third supply line 64) at a given temperature. The supply line (third supply line 64) is connected between the processing fluid supply device 70 that performs the processing fluid supply step (step S204) and the substrate processing device 1 that performs the substrate processing step (step S205). This allows for stable drying processing with the processing fluid from the first wafer W after the start of processing.

[0195] While embodiments of the present disclosure have been described above, the present disclosure is not limited to the embodiments described above, and various modifications are possible without departing from its spirit. For example, the above embodiments show an example in which the first supply line 62 branches into two second supply lines 63, but the present disclosure is not limited to such an example, and the first supply line 62 may branch into three second supply lines 63. Furthermore, the first supply line 62 does not have to branch into multiple second supply lines 63.

[0196] The embodiments disclosed herein should be considered in all respects to be illustrative and not restrictive. Indeed, the embodiments described above can be embodied in a variety of forms. Furthermore, the embodiments described above may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims. [Explanation of Symbols]

[0197] S Substrate Processing System W wafer (an example of a substrate) 1. Substrate processing apparatus 7 Control Unit 18. Drying unit (an example of a processing chamber) 41 valves 43. Heater (an example of a heating element) 60 Processing fluid supply source 61 Processing fluid supply line 62. Supply Line 1 63 Second supply line 64. Third supply line (an example of a supply line) 65. Fourth supply line (an example of another supply line) 70 Processing fluid supply device 110 Temperature sensor (an example of a temperature measuring unit) 120 Branching point 130 Return line (an example of a temperature maintenance mechanism) 140 Cooling mechanism (an example of a temperature maintenance mechanism)

Claims

1. A processing fluid supply device that supplies a processing fluid adjusted to a given temperature, A substrate processing apparatus that processes a substrate with the processing fluid supplied from the processing fluid supply device, A supply line connected between the processing fluid supply device and the substrate processing device, The supply line includes a temperature measuring unit that measures at least one of the temperature of the processing fluid and the temperature of the supply line, A control unit that controls each part, Equipped with, The control unit, when the temperature measured by the temperature measuring unit differs from the given temperature, changes at least one of the pressure of the processing fluid supplied from the processing fluid supply device and the temperature of the processing fluid heated in the substrate processing apparatus from a standard recipe. PCB processing system.

2. The control unit measures the temperature of the substrate using the temperature measuring unit before the substrate is brought into the processing chamber within the substrate processing apparatus. The substrate processing system according to claim 1.

3. A processing fluid supply device that supplies a processing fluid in a liquid state adjusted to a given temperature, A substrate processing apparatus that processes a substrate using a processing fluid supplied from a processing fluid supply device, which changes the liquid state of the processing fluid to a supercritical state, and processes the substrate with the supercritical state of the processing fluid. A supply line connected between the processing fluid supply device and the substrate processing device, A return line that returns the processing fluid flowing through the supply line to the processing fluid supply device, Equipped with, The substrate processing apparatus is A processing chamber for processing the substrate, Another supply line connected between the supply line and the processing chamber, A heater provided in the aforementioned other supply line, which causes the liquid state of the processing fluid to undergo a phase change to a supercritical state of the processing fluid, A valve provided upstream of the heater in the aforementioned other supply line, It has, The return line is connected to the upstream side of the valve in the other supply line. PCB processing system.

4. It further comprises a control unit that controls each part, If the substrate has not been loaded into the processing chamber within the substrate processing apparatus, the control unit returns the processing fluid flowing through the supply line to the processing fluid supply device via the return line. The substrate processing system according to claim 3.

5. The return line is connected to the vicinity of the substrate processing device in the supply line. The substrate processing system according to claim 3 or 4.

6. A processing fluid supply device that supplies a processing fluid adjusted to a given temperature, A substrate processing apparatus that processes a substrate with the processing fluid supplied from the processing fluid supply device, A supply line connected between the processing fluid supply device and the substrate processing device, A return line that returns the processing fluid flowing through the supply line to the processing fluid supply device, Equipped with, The substrate processing apparatus is A processing chamber for processing the substrate, Another supply line connected between the supply line and the processing chamber, A heating unit is provided in the aforementioned other supply line for heating the processing fluid, It has, The return line is connected to the downstream side of the heating section. PCB processing system.

7. The processing fluid supply device supplies the processing fluid, which is in a liquid state at a temperature lower than room temperature, to the substrate processing device. The substrate processing apparatus processes the substrate with a supercritical processing fluid. A substrate processing system according to any one of claims 1, 2, or 6.

8. A process fluid supply step that supplies a process fluid adjusted to a given temperature, A substrate processing step in which the substrate is processed with the processing fluid supplied by the processing fluid supply step, In a supply line connected between a processing fluid supply device that performs the processing fluid supply step and a substrate processing device that performs the substrate processing step, a temperature measurement step is provided to measure at least one of the temperature of the processing fluid and the temperature of the supply line, Includes, If the temperature measured in the temperature measurement step differs from the given temperature, at least one of the pressure of the processing fluid supplied from the processing fluid supply device and the temperature of the processing fluid heated in the substrate processing apparatus is changed from the standard recipe. Substrate processing method.

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