Clamping fixture, inspection apparatus, method, and system for wafer-level aging inspection.

Abstract

Relating to the technical field of wafer inspection, it is a clamping jig, inspection apparatus, method and system for wafer-level aging inspection. The wafer-level aging inspection apparatus includes a clamping jig for wafer-level aging inspection and a lifting mechanism. The clamping jig for wafer-level aging inspection includes a cover plate assembly, a lower sealing assembly, a heat sink, and a heating device. The heat sink is used for placing the wafer. The cover plate assembly includes a first PCB substrate and a micro-positioner for inspection probes connected to the first PCB substrate. The lower sealing assembly includes a lower sealing cover. The lower sealing cover is connected to the cover plate assembly to form an inspection chamber. The heat sink and the heating device are located in the inspection chamber, and the heating device is located between the lower sealing cover and the heat sink. The lifting mechanism is provided to expand and contract vertically under control. The lifting mechanism movably abuts against the clamping jig for wafer-level aging inspection, thereby moving the lower sealing assembly upward in conjunction to connect to the cover plate assembly to form an inspection chamber.

Description

Technical Field

[0001] The present invention relates to the technical field of wafer inspection, and particularly to a clamping fixture for wafer-level aging inspection, a wafer-level aging inspection apparatus, an inspection method, and an inspection system.

Background Art

[0002] In the field of wafer-level aging inspection, it is necessary to place the wafer in a sealed inspection chamber for high-pressure and high-temperature inspection. In the prior art, generally, a PCB substrate is directly connected to a lower sealing cover to form a sealed inspection chamber, and then high-pressure and high-temperature inspection is performed on the wafer in the lower sealing cover. The technical solution for performing high-temperature and high-pressure inspection on the wafer in the lower sealing cover generally involves driving the PCB substrate and the lower sealing cover together to descend to a position where they cooperate with a heating device, thereby performing high-temperature inspection on the wafer in the lower sealing cover. Such an embodiment does not cause the PCB substrate to receive too much pressure. However, in the process of inspecting an 8-inch wafer, due to the large size of the wafer, it is easily bent and deformed in a high-temperature and high-pressure inspection environment, which affects the high-temperature and high-pressure inspection results of the wafer. In addition, a large pressure is required to tighten the chamber for an 8-inch wafer, and the wafer may be damaged if it is not firmly pressed. Since the 8-inch wafer has a large area in the wafer-level aging inspection process, it is easily bent and deformed in a high-temperature and high-pressure environment, which affects the results of the wafer-level aging inspection. Therefore, it is necessary to use a more effective fixing method. For example, a fixing method in which the PCB substrate is separated from the lower sealing cover and pressed up and down to be adhered is used to press and adhere the wafer to avoid the wafer from bending and deforming. However, such a method has not been seen in the prior art. In this method, during the process of pressing and adhering, if the PCB substrate receives too much pressure and is deformed, the contact between the inspection probe and the wafer may become weak or the contact may be poor, resulting in inspection errors.

[0003] Currently, PCB boards are connected to external inspection equipment using probes. This connection method is rigid, requiring high precision in the positioning and structure of the PCB board and the external inspection equipment. There is a high degree of structural correlation between the external inspection equipment and the clamping fixture, the position is fixed, installation and maintenance are complex, and there is a lack of flexibility in structure and layout. Furthermore, there are multiple contact points between the probe and the PCB board in the circuit, limiting the lifespan of the probe. If any of the probes are damaged, it affects the connection of the PCB board to the external inspection equipment, and consequently directly impacts the lifespan of both the PCB board and the external inspection equipment, reducing reliability and stability. In the clamping fixture, one end of the probe contacts a contact point on the surface of the clamping fixture, and the other end of the probe is directly connected to the external inspection equipment. This requires high precision in the processing and installation of the related structures, limits the size of the related structures, the size of wafers that the clamping fixture can accommodate is small, and the number of power supply channels is limited.

[0004] Furthermore, wafer-level aging inspection processes generally require power supply and heating inspections of the wafer to examine its wafer-level aging characteristics. However, heating inspections involve heating the wafer to a high temperature using a heating device to inspect its high-temperature resistance. In conventional technology, the heating device is generally placed at the bottom of the lower sealing lid assembly, and the lower sealing lid assembly is heated by multiple heating sheets, thereby performing high-temperature inspections on the wafer inside the lower sealing lid assembly. However, this method of heating with multiple heating sheets results in uneven heating of the wafer, and because the heating device is located outside the lower sealing lid assembly, the heat transfer rate is low, which affects the efficiency of wafer inspection. [Overview of the project]

[0005] The first object of the first aspect of the present invention is to provide a wafer level aging inspection apparatus in which wafers do not bend in a high-temperature, high-pressure inspection environment.

[0006] A second object of the first aspect of the present invention is to improve the wafer aging inspection accuracy of a wafer level aging inspection apparatus.

[0007] A third object of the first aspect of the present invention is to optimize the structure of a wafer level aging inspection apparatus.

[0008] A first object of a second aspect of the present invention is to provide a wafer-level aging inspection system including the wafer-level aging inspection apparatus described above.

[0009] The first object of a third aspect of the present invention is to provide an inspection method for use in the wafer level aging inspection apparatus described above.

[0010] The first object of a fourth aspect of the present invention is to provide a clamping jig for wafer level aging inspection, thereby solving the technical problem in the conventional technology that uses a probe connection method, which has a limited number of power supply channels to the wafer.

[0011] A second object of the fourth aspect of the present invention is to avoid expansion and deformation of the micropositioner and connecting components for the inspection probe when heated.

[0012] A third object of the fourth aspect of the present invention is to avoid damage to the PCB substrate when the pressing and contacting force inside the inspection chamber is too large.

[0013] The first object of a fifth aspect of the present invention is to provide a clamping jig for wafer-level aging inspection and to solve the technical problem of the prior art in which heating to the wafer is uneven when performing high-temperature aging inspection on the wafer.

[0014] A second object of the fifth aspect of the present invention is to simplify the structure of the heating device.

[0015] A third object of the fifth aspect of the present invention is to rationally position the ceramic plate to avoid damaging the wafer when the heating device comes into direct contact with the wafer.

[0016] In particular, according to the first aspect of the present invention, The apparatus includes a cover plate assembly, a bottom sealing assembly, a heat sink, and a heating device, the heat sink being used to support a wafer, the cover plate assembly including a first PCB substrate and a micropositioner for an inspection probe connected to the first PCB substrate, the bottom sealing assembly including a bottom sealing lid, the bottom sealing lid being connected to the cover plate assembly to form an inspection chamber, the heat sink and the heating device being located within the inspection chamber, and the heating device being positioned between the bottom sealing lid and the heat sink as a wafer level aging inspection clamping jig. A wafer level aging inspection apparatus is provided, which includes a lifting mechanism that is provided to extend and retract vertically under control, and which movably contacts the wafer level aging inspection clamp jig, thereby moving the lower sealing assembly upward in conjunction with it to connect to the lid plate assembly and form the inspection chamber.

[0017] Optionally, the wafer-level aging inspection device may be: The apparatus includes an upper plate assembly and a lower plate assembly, the upper plate assembly and the lower plate assembly being connected by a support column, the wafer level aging inspection clamp fixture being located below the upper plate assembly and connected to the upper plate assembly, the lifting mechanism further including a mounting base attached to the lower plate assembly, and a floating mechanism provided on the upper plate assembly, the floating mechanism being provided to float when the lid plate assembly is pressed against the lower sealing lid, thereby preventing deformation of the lid plate assembly.

[0018] In particular, according to a second aspect of the present invention, a wafer-level aging inspection system is provided, the wafer-level aging inspection system includes a loading / unloading device, at least one inspection device, and at least one wafer-level aging inspection apparatus, The loading / unloading device is used to place the wafer in the corresponding wafer-level aging inspection apparatus and perform wafer-level aging inspection. Any of the wafer-level aging inspection devices is connected to the corresponding inspection equipment to perform wafer-level aging inspection.

[0019] In particular, according to the third aspect of the present invention, After the wafer loading is complete, the lifting mechanism is controlled to raise it to a first height, thereby connecting the lifting mechanism to the lower sealing assembly. The steps include controlling the lifting mechanism to subsequently raise the lower sealing assembly to a second height in conjunction, thereby moving the lower sealing assembly until it connects to the lid plate assembly and forms an inspection chamber, The present invention provides an inspection method for use in the above-mentioned wafer-level aging inspection apparatus, comprising the steps of: supplying power to a micropositioner for an inspection probe included in a heating device, heat sink, and cover plate assembly, thereby performing a wafer-level aging inspection on the wafer.

[0020] In particular, according to a fourth aspect of the present invention, a clamping jig for wafer level aging inspection is provided, further comprising a cover plate assembly and a lower sealing assembly, wherein the cover plate assembly is connected to the lower sealing assembly to form an inspection chamber for housing a wafer.

[0021] Optionally, the cover plate assembly includes a PCB substrate comprising a first region and a second region, the first region and the second region each located on different sides of the PCB substrate, and each first contact provided in the first region being electrically connected to a corresponding second contact provided in the second region; a micropositioner for inspection probes located at the bottom of the PCB substrate and connected to the PCB substrate, having a plurality of inspection probes, each of which one end contacts a corresponding first contact and the other end contacts a wafer, thereby performing wafer-level aging inspection on the wafer; and at least one connector attached to the second region of the PCB substrate, each of which is connected to a corresponding second contact, and each of the connectors being connected by a wire harness to an external inspection device, and used to perform wafer-level aging inspection on the wafer.

[0022] Optionally, the wafer level aging inspection clamp fixture further includes a heat sink for placing wafers and a heating device, wherein the heat sink and the heating device are located within the inspection chamber, the heat sink is stacked above the heating device, the heating device is electrically connected to an electrical assembly located below the lower sealing assembly, and the heating device is A film heater layer having uniformly arranged resistance wires and at least one power supply port connected to the resistance wires, the film heater layer being provided on the side of the heat sink away from the wafer and the heat sink heating the wafer; and a connection assembly including at least one set of first connection probes passing through the lower sealing lid assembly, each of the first connection probes having one end in contact with the corresponding power supply port and the other end passing through the lower sealing assembly to contact the electrical assembly, thereby the electrical assembly supplying power to the film heater layer for heating.

[0023] According to the embodiments of some examples of the present invention, a heating device is provided inside the lower sealing cover, and the wafer is placed on the heat sink. By using a lifting mechanism that can expand and contract vertically, the lower sealing assembly is moved upward in conjunction to be connected to the cover plate assembly to form an inspection chamber. The heat sink is firmly applied, and on a flat heat sink, the wafer is also flat and does not bend. The wafer can be pressed and adhered to avoid being damaged.

[0024] Furthermore, the lifting mechanism of the present invention includes a lifting assembly and an electrical assembly. After the lifting mechanism moves upward until the lower sealing assembly is connected to the cover plate assembly in conjunction, the electrical assembly of the lifting mechanism is used to supply power to the heating device and the heat sink inside the inspection chamber. That is, the lifting mechanism not only realizes lifting to press and adhere the wafer, but also realizes supplying power to the heating device and the heat sink, thereby optimizing the structure of the wafer-level aging inspection device.

[0025] According to the embodiments of some other examples of the present invention, a floating mechanism is provided on the upper plate assembly of the mounting base. The floating mechanism is provided to float when the cover plate assembly is pressed by the lower sealing cover, so that the cover plate assembly can avoid being deformed under pressure, ensure that the inspection probe on the cover plate assembly contacts the wafer, and improve the stability of the contact, thereby improving the accuracy of the wafer-level aging inspection.

[0026] Furthermore, in the present invention, when the lifting mechanism ascends, the pads at the top of the second PCB board of the electrical assembly cooperate with the lower sealing cover to supply power to the heating device and the heat sink, thereby realizing the high-pressure and high-temperature inspection of the wafer. That is, the lifting mechanism not only realizes lifting to press and adhere the wafer, but also realizes providing the conditions for inspecting the wafer inside the lower sealing cover, thereby optimizing the structure of the wafer-level aging inspection device.

[0027] According to the embodiments of some further examples of the present invention, a connector is newly provided in the second region of the PCB substrate, and by using a wire harness to connect the connector to an external inspection device, the conventional method of using a probe for connection is cancelled. That is, a rigid connection is replaced with a flexible connection, whereby the relative positions of the clamp fixture for wafer-level aging inspection and the external inspection device can be set flexibly respectively, and the number of channels for supplying power to the wafer can be increased. Also, when using a probe to connect to an external inspection device, there are many contact points and the reliability of the circuit connection is low. However, the present invention uses a wire harness for connection and there are no contact points, thus improving the reliability of the circuit connection.

[0028] Furthermore, in the present invention, at least one groove is provided at the edge of the micro-positioner for the inspection probe, and at least one positioning post is provided at the support part of the connecting component. Each positioning post is arranged corresponding to one groove, thereby positioning the micro-positioner for the inspection probe. The cooperation between the positioning post and the groove limits the position of the micro-positioner for the inspection probe. The groove is not closed, and the positioning post only contacts the two sides of the groove along the circumferential direction of the micro-positioner. When the micro-positioner for the inspection probe and the connecting component expand due to heating, the positioning post can slide slightly along the radial direction of the micro-positioner for the inspection probe in the groove and does not press against the groove, so that the stress when the micro-positioner for the inspection probe and the connecting component expand is eliminated, and deformation of the micro-positioner for the inspection probe and the connecting component is avoided.

[0029] Furthermore, the present invention provides load-bearing columns that pass through the PCB substrate, with one end of the load-bearing column connected to the upper sealing lid located at the top of the PCB substrate and the other end protruding from the bottom surface of the PCB substrate. If the pressing and sealing force inside the inspection chamber is too great and the lower sealing lid is too close to the PCB substrate, the load-bearing column will contact the lower sealing lid before the PCB substrate, absorbing the pressing and sealing force of the inspection chamber, thereby preventing the PCB substrate from being damaged by excessive pressure.

[0030] According to some further embodiments of the present invention, the heating device for a wafer level aging inspection clamp fixture includes a film heater layer and a connection assembly, wherein the film heater layer has uniformly arranged resistance wires and at least one power supply port connected to the resistance wires, the film heater layer is provided on the side of the heat sink away from the wafer, the heat sink heats the wafer, and the connection assembly includes at least one set of first connection probes passing through a lower sealing assembly, one end of each of the first connection probes contacting a corresponding power supply port and the other end passing through the lower sealing assembly to contact an electrical assembly, thereby the electrical assembly powers the film heater layer, thereby the film heater layer heats the wafer on the heat sink. The above technical solution uses a film heater layer having uniformly arranged resistance wires, canceling out the prior art technical solution which uses multiple heating sheets, thereby ensuring uniform heating of the wafer and avoiding localized overheating of the wafer. Furthermore, compared to conventional embodiments in which the heating device is placed inside the lower sealing lid assembly, that is, the lower sealing lid assembly and the heating device are integrated, and a secondary structure is provided to bring the lower sealing lid assembly into contact with the heating device, the structure of the wafer level aging inspection apparatus is simplified and the heating efficiency of the heating device for the wafer is improved, thereby improving the wafer inspection efficiency.

[0031] Furthermore, the film heater layer of the heating device of the present invention has uniformly arranged resistance wires and at least one power supply port connected to the resistance wires. The first connecting probe set is directly connected to the resistance wires by the power supply port, thereby enabling uniform heating of the film heater layer and avoiding the need to provide multiple probe assemblies corresponding to multiple heating sheets, thus simplifying the structure of the heating device.

[0032] Furthermore, the heating device of the present invention further includes a ceramic plate, which is positioned between the second insulating component and the heat sink, and is used to transfer the heat generated in the film heater layer to the heat sink, thereby avoiding damage to the wafer when the heating device comes into direct contact with the wafer, and thereby reducing the wafer defect rate in the wafer level aging inspection process.

[0033] The above and other objects, advantages, and features of the present invention will become even clearer to those skilled in the art from the detailed description of specific embodiments of the present invention with reference to the following drawings. [Brief explanation of the drawing]

[0034] Some specific embodiments of the present invention are described in detail below in an illustrative and non-limiting manner with reference to the drawings. In the drawings, the same reference numerals represent the same or similar parts or components. It will be understood by those skilled in the art that these drawings are not necessarily drawn in dimensional relationships. Here, [Figure 1] Figure 1 is a schematic diagram of a wafer-level aging inspection apparatus according to one embodiment of the present invention. [Figure 2] Figure 2 is a schematic diagram of the cover plate assembly in the wafer-level aging inspection apparatus shown in Figure 1. [Figure 3] Figure 3 is a schematic cross-sectional view of the lower sealing lid in the wafer-level aging inspection apparatus shown in Figure 1. [Figure 4] Figure 4 is a schematic enlarged view of section A in Figure 3. [Figure 5] Figure 5 is a schematic diagram of the lower sealing lid in the wafer-level aging inspection apparatus shown in Figure 1. [Figure 6] Figure 6 is a schematic diagram of the lifting mechanism in the wafer-level aging inspection apparatus shown in Figure 1. [Figure 7] Figure 7 is a schematic diagram of the adapter plate in the lifting mechanism shown in Figure 6. [Figure 8] Figure 8 is a schematic block diagram of a wafer-level aging inspection system according to one embodiment of the present invention. [Figure 9] Figure 9 is a schematic process diagram of an inspection method used in a wafer-level aging inspection apparatus according to one embodiment of the present invention. [Figure 10] Figure 10 is a schematic diagram of a wafer-level aging inspection apparatus according to one embodiment of the present invention. [Figure 11] Figure 11 is a schematic cross-sectional view of the floating mechanism and upper plate assembly in the wafer aging inspection device shown in Figure 1. [Figure 12] Figure 12 is a schematic enlarged view of section A in Figure 11. [Figure 13] Figure 13 is a schematic diagram of the lower cover plate in the wafer-level aging inspection apparatus shown in Figure 10. [Figure 14] Figure 14 is a schematic mounting diagram of the floating plate and lower cover plate in the wafer level aging inspection apparatus shown in Figure 10. [Figure 15] Figure 15 is a schematic diagram of the upper cover plate in the wafer-level aging inspection apparatus shown in Figure 10. [Figure 16] Figure 16 is a schematic diagram of the lifting mechanism in the wafer-level aging inspection apparatus shown in Figure 10. [Figure 17] Figure 17 is a schematic diagram of a clamping jig for wafer-level aging inspection according to one embodiment of the present invention. [Figure 18] Figure 18 is a schematic exploded view of a clamping jig for wafer-level aging inspection according to one embodiment of the present invention. [Figure 19] Figure 19 is a schematic positional diagram of a clamping jig and external inspection device for wafer-level aging inspection according to one embodiment of the present invention. [Figure 20] Figure 20 is a schematic diagram of the PCB substrate shown in Figure 18. [Figure 21] Figure 21 is a schematic diagram of a micropositioner for an inspection probe according to one embodiment of the present invention. [Figure 22] Figure 22 is a schematic enlarged view of area A in Figure 21. [Figure 23] Figure 23 is a schematic diagram of a connecting component according to one embodiment of the present invention. [Figure 24] Figure 24 is a schematic enlargement of area B in Figure 23. [Figure 25] Figure 25 is a schematic diagram showing the position of load-bearing components according to one embodiment of the present invention. [Figure 26] Figure 26 is a schematic diagram of the load-bearing component shown in Figure 25. [Figure 27] Figure 27 is a schematic diagram of a lifting mechanism according to one embodiment of the present invention. [Figure 28] Figure 28 is a schematic diagram of a heating device according to one embodiment of the present invention. [Figure 29] Figure 29 is a schematic cross-sectional view of a heating device according to one embodiment of the present invention. [Figure 30] Figure 30 is a schematic, localized enlargement view of area A shown in Figure 29. [Figure 31] Figure 31 is a schematic cross-sectional view of a heating device according to one embodiment of the present invention, viewed from a different angle. [Figure 32] Figure 32 is a schematic local enlargement view of area B shown in Figure 31. [Figure 33] Figure 33 is a schematic diagram of a wafer-level aging inspection apparatus according to one embodiment of the present invention. [Figure 34] Figure 34 is a schematic cross-sectional view of a partial structure of a wafer-level aging inspection apparatus according to one embodiment of the present invention. [Figure 35] Figure 35 is a schematic local enlargement view of area C shown in Figure 34. [Modes for carrying out the invention]

[0035] The embodiments of the present invention are described in detail below, with examples of embodiments shown in the figures. The same or similar reference numerals consistently represent the same or similar parts or parts having the same or similar functions. The embodiments described below with reference to the drawings are illustrative and intended to clarify the present invention; they should not be considered limitations on the present invention.

[0036] In the description of this invention, the directions or positional relationships indicated by terms such as "up" and "down" are based on the directions or positional relationships shown in the drawings, and are used for the purpose of describing and simplifying the description of this invention. It should be understood that this does not indicate, or implicitly indicate, that the devices or components in question must be provided in a specific direction, or configured and operated in a specific direction, and therefore should not be considered a limitation on this invention.

[0037] The terms “first” and “second” are used solely for descriptive purposes and should not be interpreted as indicating or implicitly indicating relative importance or the number of technical features covered. Thus, features limited by “first” and “second” may explicitly or implicitly include at least one such feature, i.e., one or more such features. In the description of this invention, “multiple” means at least two, for example, two, three, etc., unless otherwise specifically defined. When a feature “includes” one or more features covered by it, unless otherwise specifically stated, this does not exclude other features and may further include other features.

[0038] Unless otherwise clearly defined and limited, terms such as “connect” and “attach” are to be understood in a broad sense. Unless otherwise clearly defined, for example, a connection may be fixed, detachably connected, or integrated; it may be a mechanical connection or an electrical connection; it may be a direct connection or an indirect connection through an intermediary; or it may be internal communication between two parts or interaction between two parts. Those skilled in the art will be able to understand the specific meaning of the terms in this invention from the specific context.

[0039] Unless otherwise specified, all terms used in this embodiment (including technical and scientific terms) have the same meaning as those generally understood by those skilled in the art.

[0040] Figure 1 is a schematic diagram of a wafer-level aging inspection apparatus 100A according to one embodiment of the present invention, and Figure 2 is a schematic diagram of the cover plate assembly 70A in the wafer-level aging inspection apparatus 100A shown in Figure 1. As shown in Figures 1 and 2, in this embodiment, the wafer-level aging inspection apparatus 100A includes a wafer-level aging inspection clamp jig 10A and a lifting mechanism 30A. The wafer-level aging inspection clamp jig 10A includes a cover plate assembly 70A, a lower sealing assembly, a heat sink 22A, and a heating device. The heat sink 22A is used to place wafers on it. The cover plate assembly 70A includes a first PCB substrate 11A and a micropositioner 12A for an inspection probe connected to the first PCB substrate 11A. The lower sealing assembly includes a lower sealing lid 20A, which is connected to the cover plate assembly 70A to form an inspection chamber 21A. The heat sink 22A and the heating device are located inside the inspection chamber 21A, and the heating device is located between the lower sealing lid 20A and the heat sink 22A. The lifting mechanism 30A is provided to extend and retract vertically under control, and is movably connected to the wafer-level aging inspection clamp fixture 10A, thereby moving the lower sealing assembly upward in conjunction with it and connecting it to the lid plate assembly 70A to form the inspection chamber 21A. Here, the micropositioner 12A for inspection probes has multiple inspection probes for inspecting wafers. The lower sealing lid 20A is located below the wafer-level aging inspection clamp fixture 10A, and when the lower sealing lid 20A and the lid plate assembly 70A form the inspection chamber 21A, the micropositioner 12A for inspection probes is located inside the inspection chamber 21A, so that the multiple inspection probes on the micropositioner 12A for inspection probes are connected to the wafer, thereby enabling wafer-level aging inspection of the wafer.

[0041] In this embodiment, the heating device is installed inside the lower sealing lid 20A, and the wafer is placed on the heat sink 22A. By using the vertically expandable lifting mechanism 30A, the lower sealing assembly is moved upward in conjunction with the heating device and connected to the lid assembly to form the inspection chamber 21A. The wafer is firmly pressed against the heat sink 22A, and because the heat sink 22A is flat, the wafer remains flat and does not bend. The wafer is pressed and adhered to the heat sink 22A, preventing it from being damaged.

[0042] In this embodiment, the lifting mechanism 30A includes a lifting assembly 32A and an electrical assembly 31A, the electrical assembly 31A being provided at the free end of the lifting assembly 32A and movably connected to the lower sealing assembly, and the electrical assembly 31A is provided to supply power to a heating device and a heat sink 22A, thereby enabling wafer level aging testing of the wafer.

[0043] The lifting mechanism 30A in this embodiment includes a lifting assembly 32A and an electrical assembly 31A. The lifting mechanism 30A moves the lower sealing assembly upward in conjunction with the lifting mechanism 30A and connects it to the cover plate assembly 70A. Then, the electrical assembly 31A of the lifting mechanism 30A is used to supply power to the heating device and heat sink 22A in the inspection chamber 21A. In other words, the lifting mechanism 30A not only rises to press and adhere to the wafer, but also supplies power to the heating device and heat sink 22A, thereby optimizing the structure of the wafer level aging inspection apparatus 100A.

[0044] In this embodiment, the lower sealing assembly further includes a sealing tape 211A provided on the uppermost part of the lower sealing lid 20A, and the sealing tape 211A is used to seal the inspection chamber 21A.

[0045] Figure 3 is a schematic cross-sectional view of the lower sealing lid 20A in the wafer level aging inspection apparatus 100A shown in Figure 1, and Figure 4 is a schematic enlarged view of portion A in Figure 3. As shown in Figures 3 and 4, in this embodiment, the heating device includes a film heater layer 26A and at least one set of first connection probes 27A, wherein the film heater layer 26A has uniformly arranged resistance wires 262A and at least one power supply port 261A connected to the resistance wires 262A, the first connection probes 27A pass through the lower sealing lid 20A, one end of each first connection probe set 27A contacts one power supply port 261A and the other end contacts an electrical assembly 31A, thereby the electrical assembly 31A supplies power to the film heater layer 26A, thereby heating the wafer on the heat sink 22A. Here, the film heater layer 26A may be a mica heating sheet or a ceramic heating sheet, and a resistance wire 262A is provided between the two mica film layers or ceramic film layers, and the resistance wire 262A is provided so as to be uniformly distributed in the extending plane. In this embodiment, there are two first connection probes and two power supply ports 261A, and the first connection probe set 27A includes multiple connection probes. In other embodiments, the number of first connection probes and power supply ports 261A may be set based on specific design requirements.

[0046] In this embodiment, the heating device further includes a second insulating component 25A and a first insulating component 24A. The second insulating component 25A, the first insulating component 24A, the film heater layer 26A, the ceramic plate 23A, and the heat sink 22A are sequentially arranged in the inspection chamber 21A from bottom to top, with the film heater layer 26A positioned at the top of the first insulating component 24A, that is, below the ceramic plate 23A. Here, the ceramic plate 23A has the functions of heat transfer and insulation. The first connecting probe assembly 27A passes sequentially through the bottom sealing lid 20A, the second insulating component 25A, and the first insulating component 24A, thereby contacting the power supply port 261A of the film heater layer 26A. In this embodiment, the heating device is provided inside the inspection chamber 21A, that is, the lower sealing lid 20A and the heating device are integrated, and a secondary structure is provided to bring the lower sealing lid 20A into contact with the heating device. Compared to this embodiment, the structure of the wafer level aging inspection apparatus 100A is simplified, and the heating efficiency of the heating device for the wafer is improved, thereby improving the wafer inspection efficiency.

[0047] Figure 5 is a schematic diagram of the lower sealing lid 20A in the wafer-level aging inspection apparatus 100A shown in Figure 1, and Figure 6 is a schematic diagram of the lifting mechanism 30A in the wafer-level aging inspection apparatus 100A shown in Figure 1. As shown in Figures 5 and 6, in this embodiment, the electrical assembly 31A includes a second PCB substrate 311A, the second PCB substrate 311A ​​is connected to an external circuit, and at least one first pad position 33A is provided at the top of the second PCB substrate 311A, each first pad position 33A is arranged to correspond to one first connection probe set 27A, so that when the first connection probe set 27A is in contact, the external circuit supplies power to the heating device via the second PCB substrate 311A, thereby performing a heating inspection on the wafer. When the lifting assembly 32A of the lifting mechanism 30A moves the electrical assembly upward in conjunction with it and brings it into contact with the lower sealing cover 20A, the first pad position 33A comes into contact with the first connection probe set 27A, thereby establishing an electrical connection. Here, there are two first pad positions 33A, and the second connection probe set 28A includes multiple connection probes. In other embodiments, the number of first pad positions 33A may be set according to the actual needs.

[0048] In this embodiment, at least one second connection probe set 28A that contacts the heat sink 22A is further provided through the lower sealing lid 20A. At least one second pad position 34A is further provided at the top of the second PCB substrate 311A, and each second pad position 34A is positioned corresponding to one second connection probe set 28A. As a result, when the external circuit makes contact with the second connection probe set 28A, the second PCB substrate 311A ​​supplies power to the heat sink 22A, thereby performing a power supply test on the wafer. In this embodiment, the second connection probe set 28A passes sequentially through the lower sealing lid 20A, the second heat insulation component 25A, the first heat insulation component 24A, and the ceramic plate 23A, thereby contacting the bottom of the heat sink 22A, and thereby supplying power to the heat sink 22A to realize a high-voltage test on the wafer. Here, a high-voltage test of about 2000V is performed on the wafer.

[0049] In this embodiment, a third connection probe set and at least one fourth connection probe set are further provided through the lower sealing lid 20A, a third pad position and at least one fourth pad position are further provided at the top of the second PCB substrate 311A, a groove for placing a first temperature sensor is provided at the bottom of the heat sink 22A, one end of the third connection probe set contacts the first temperature sensor and the other end contacts the third pad position, thereby obtaining the temperature of the heat sink 22A. At least one second temperature sensor is provided in the film heater layer 26A, and the fourth connection probe set corresponds to one second temperature sensor and one fourth pad position, which may be understood as one end of the fourth connection probe set contacting the second temperature sensor and the other end contacting the fourth pad. In this embodiment, there are two second temperature sensors, one of which is used to obtain the temperature of the film heater layer 26A, and the other is used to perform overheat protection.

[0050] Figure 7 is a schematic diagram of the adapter plate 314A in the lifting mechanism 30A shown in Figure 6. As shown in Figure 7, and also with reference to Figure 6, in this embodiment, a plurality of first gas holes 29A are provided at the bottom of the lower sealing lid 20A, a plurality of second gas holes 312A are provided on the second PCB substrate 311A, each second gas hole 312A corresponds to one first gas hole 29A, the electrical assembly 31A further includes the adapter plate 314A, the adapter plate 314A is provided below the second PCB substrate 311A, and the adapter plate 314A has a gas passage 316A that communicates with the plurality of second gas holes 312A, thereby creating a vacuum in the lower sealing lid 20A through the gas passage 316A, the second gas holes 312A and the first gas holes 29A, thereby attracting the heat sink 22A and the wafer. In this embodiment, when it is necessary to adsorb the heat sink 22A, the first gas hole 29A of the lower sealing lid 20A must communicate with the bottom of the heat sink 22A, that is, it must penetrate the ceramic plate 23A, otherwise the bottom of the heat sink 22A cannot be adsorbed. When it is necessary to adsorb a wafer, the first gas hole 29A must penetrate the heat sink 22A, thereby enabling wafer adsorption. The gas flow path 316A has a gas flow path connection port 317A, and the gas flow path connection port 317A is connected to an external gas passage by a fitting.

[0051] In this embodiment, when performing wafer-level aging inspection on a wafer, it is necessary to fill the inspection chamber 21A with nitrogen. Specifically, nitrogen is filled into the inspection chamber 21A from the gas channel 316A, the second gas hole 312A, and the first gas hole 29A via an external gas passage. The nitrogen acts as a protective gas, thereby preventing high-pressure sparks on the wafer during the high-pressure inspection process.

[0052] In this embodiment, a sealing assembly 313A is further provided at the top of the second PCB substrate 311A ​​for sealing when gas is injected into the first gas hole 29A and the second gas hole 312A, thereby preventing gas leakage.

[0053] In this embodiment, the adapter plate 314A further includes an adapter probe assembly 318A, and the electrical assembly 31A further includes a third PCB board 315A provided at the bottom of the adapter plate, the third PCB board 315A being connected to the adapter probe assembly 318A and to an external circuit.

[0054] In this embodiment, the first PCB substrate 11A includes a first interface set 112A and a second interface set 111A, and the micropositioner 12A for inspection probes includes a plurality of inspection probes. The first interface set 112A is provided on the first side surface of the first PCB substrate 11A facing the bottom sealed assembly, and one end of each inspection probe is connected to the corresponding first interface included in the first interface set 112A and the other end is connected to the wafer, thereby performing wafer-level aging inspection on the wafer, and the second interface set 111A may be provided on any second side surface other than the first side surface of the first PCB substrate 11A. The wafer-level aging inspection clamp fixture 10A further includes a plurality of connectors 14A, which are attached to the second side surface of the first PCB substrate 11A, and each of the connectors 14A is connected to a corresponding second interface included in the second interface set 111A, and each of the connectors 14A is connected to an external inspection device by a wire harness, and is used to perform wafer-level aging inspection on a wafer.

[0055] In this embodiment, a heat dissipation assembly 13A is further provided between the first interface set 112A and the second interface set 111A of the first PCB substrate 11A, thereby blocking the heat generated by the first interface set 112A during the wafer-level aging inspection process and preventing it from affecting the normal operation of the connector 14A.

[0056] This embodiment adds a connector 14A to the second interface set 111A and connects the connector 14A to the external inspection device using a wire harness, thereby canceling the conventional method of connection using a probe. In other words, it replaces a rigid connection with a flexible connection, which allows for flexible setting of the relative positions of the wafer level aging inspection clamp jig 10A and the external inspection device, and increases the number of channels to supply power to the wafer. Furthermore, when connecting to the external inspection device using a probe, there are many contact points, resulting in low reliability of the circuit connection. However, this invention uses a wire harness for connection, eliminating contact points and thereby improving the reliability of the circuit connection.

[0057] In this embodiment, the wafer level aging inspection apparatus 100A further includes a mounting stand 50A, which includes a bottom plate assembly 51A, a support platform 55A, and a pair of first slide grooves 54A, the support platform 55A being used to support the lower sealing assembly, the pair of first slide grooves 54A being connected to the bottom plate assembly 51A, both of the first slide grooves 54A extending horizontally, and both ends of the support platform 55A being slidably connected to the corresponding first slide grooves 54A, the lower sealing assembly moving along the extending direction of the first slide grooves 54A in conjunction with the support platform 55A. When loading or unloading a wafer, the lower sealing assembly slides out of the mounting stand 50A along the first slide grooves 54A, and after the wafer loading or loading is complete, the lower sealing assembly returns to the mounting stand 50A along the first slide grooves 54A.

[0058] In this embodiment, the mounting frame 50A further includes an upper plate assembly 53A and a pair of second slide grooves 40A, the upper plate assembly 53A being connected to the bottom plate assembly 51A by a plurality of support columns 52, the pair of second slide grooves 40A being connected to the upper plate assembly 53A, both of which extend horizontally, and both ends of the cover plate assembly 70A being slidably connected to the corresponding second slide grooves 40A, thereby allowing the cover plate assembly 70A to be pulled out, thereby allowing the micropositioner 12A for the inspection probe to be replaced. Furthermore, the cover plate assembly 70A can be pulled out, allowing the corresponding wafer level aging inspection clamp fixture 10A to be replaced for different types of wafers, which facilitates the replacement of the wafer level aging inspection clamp fixture 10A and improves the convenience of wafer level aging inspection for wafers.

[0059] In this embodiment, the wafer level aging inspection apparatus 100A further includes an imaging device 60A, which is mounted on a mounting frame 50A and used to detect whether the lower sealing lid 20A is connected to the lid plate assembly 70A to form an inspection chamber 21A.

[0060] Figure 8 is a schematic block diagram of a wafer-level aging inspection system according to one embodiment of the present invention. As shown in Figure 8, in this embodiment, the wafer-level aging inspection system 1000A includes a loading / unloading device 200A, at least one inspection device 300A, and at least one wafer-level aging inspection apparatus 100A. The loading / unloading device 200A is used to perform wafer-level aging inspection by placing a wafer in the corresponding wafer-level aging inspection apparatus 100A. Any of the wafer-level aging inspection apparatuses 100A are connected to the corresponding inspection device to perform wafer-level aging inspection.

[0061] Figure 9 is a schematic process diagram of an inspection method used in a wafer-level aging inspection apparatus 100A according to one embodiment of the present invention. As shown in Figure 9, the inspection method used in the wafer-level aging inspection apparatus 100A includes the following steps. In step S100, after wafer loading is complete, the lifting mechanism 30A is controlled to raise it to a first height, thereby connecting the lifting mechanism 30A to the lower sealing assembly. Step S200 involves controlling the lifting mechanism 30A to continue raising the lower sealing assembly to a second height, thereby moving the lower sealing assembly until it connects to the lid assembly 70A and forms the inspection chamber 21A. In step S300, power is supplied to the micropositioner 12A for the inspection probe, which is included in the heating device, heat sink 22A, and cover plate assembly 70A, thereby performing wafer-level aging inspection on the wafer.

[0062] In this embodiment, a lifting mechanism 30A that can be raised and lowered is used to raise the lower sealing lid 20A in conjunction with the inspection chamber 21A, which is connected to the lid plate assembly 70A to form the inspection chamber 21A, and firmly presses against the heat sink 22A. On the flat heat sink 22A, the wafer also remains flat and does not bend, and the wafer is pressed and adhered to the heat sink 22A, thus preventing the wafer from being damaged.

[0063] In this embodiment, the following steps are included after step S300. The lifting mechanism 30A is controlled to move downward, thereby returning the lower sealing assembly to its original position.

[0064] Figure 10 is a schematic structural diagram of a wafer-level aging inspection apparatus 100B according to one embodiment of the present invention, Figure 11 is a schematic cross-sectional view of the floating mechanism 60B and the upper plate assembly 11B in the wafer-level aging inspection apparatus 100B shown in Figure 10, Figure 12 is a schematic enlarged view of part A in Figure 11, and Figure 13 is a schematic structural diagram of the lower cover plate 111B in the wafer-level aging inspection apparatus 100B shown in Figure 10. As shown in Figures 10 to 13, in this embodiment, the wafer-level aging inspection apparatus 100B includes a mounting frame 10B, a clamp jig for wafer-level aging inspection, a lifting mechanism 40B, and a floating mechanism 60B, wherein the mounting frame 10B includes an upper plate assembly 11B and a bottom plate assembly 12B, and the upper plate assembly 11B and the bottom plate assembly 12B are connected by a support column 13B. A wafer-level aging inspection clamping fixture is provided below the upper plate assembly 11B and connected to the upper plate assembly 11B. The wafer-level aging inspection clamping fixture includes a cover plate assembly 20B and a lower sealing assembly. The lower sealing assembly includes a lower sealing lid 30B, which is connected to the cover plate assembly 20B to form an inspection chamber for placing wafers. The cover plate assembly 20B has a micropositioner 21B for inspection probes. A lifting mechanism 40B is attached to the bottom plate assembly 12B and located below the lower sealing lid 30B. The lifting mechanism 40B is provided to extend and retract vertically under control. The lifting mechanism 40B movably contacts the wafer-level aging inspection clamping fixture, thereby moving the lower sealing assembly upward in conjunction with it to connect to the cover plate assembly 20B and form an inspection chamber. The floating mechanism 60B is provided on the upper plate assembly 11B and floats when the lid plate assembly 20B is pressed against the lower sealing lid 30B, thereby preventing deformation of the lid plate assembly 20B.

[0065] In this embodiment, a floating mechanism 60B is provided on the upper plate assembly 11B of the mounting frame 10B. The floating mechanism 60B is configured to float when the lid plate assembly 20B is pressed against the lower sealing lid 30B. This prevents the lid plate assembly 20B from being deformed by pressure, ensures that the inspection probe on the lid plate assembly 20B makes contact with the wafer, improves contact stability, and thereby improves the accuracy of wafer level aging inspection.

[0066] In this embodiment, the upper plate assembly 11B includes an upper cover plate 112B and a lower cover plate 111B, the lower cover plate 111B having a limiting groove 114B, and the floating mechanism 60B includes a floating plate 61B and an expandable assembly 63B, wherein the floating plate 61B is provided at the top of the cover plate assembly 20B and is located in the limiting groove 114B, and the floating plate 61B protrudes from the bottom of the lower cover plate 111B. The expandable assembly 63B is connected to the upper cover plate 112B and its bottom is connected to or in contact with the floating plate 61B, so that when the floating plate 61B is pressed against the cover plate assembly 20B, it is compressed and moves the floating plate 61B upward, thereby preventing the cover plate assembly 20B from being subjected to pressure and deforming, which would affect wafer aging inspection.

[0067] In this embodiment, the cover plate assembly 20B includes a first PCB substrate 22B and a micropositioner 21B for inspection probes mounted below the first PCB substrate 22B. This embodiment primarily prevents the first PCB substrate 22B from being deformed by pressure, and since the first PCB substrate 22B is connected to the micropositioner 21B for inspection probes and multiple inspection probes are provided on the micropositioner 21B for inspection probes, deformation of the first PCB substrate 22B can be avoided, thereby preventing the inspection probes from moving and causing poor contact. Furthermore, the floating mechanism 60B provided in this embodiment can also prevent the inspection probes from being damaged by excessive force, thereby extending the service life of the inspection probes.

[0068] As shown in Figure 12, the floating plate 61B is connected to the lower cover plate 111B, and a gap is provided between it and the upper cover plate 112B. When the floating plate 61B is subjected to a large pressure, the floating plate 61B can move within this gap, meaning this gap is the travel stroke of the floating plate 61B, and the travel stroke of the floating plate 61B can be designed based on the design requirements.

[0069] In this embodiment, the floating plate 61B is circular and positioned opposite the micropositioner 21B for the inspection probe. As the lower sealing lid 30B moves upward and contacts the lid assembly 20B, it is necessary to seal the micropositioner 21B for the inspection probe within the lower sealing lid 30B. Therefore, the force on the lid assembly 20B mainly contacts the area around the micropositioner 21B for the inspection probe, and the force is mainly applied near the micropositioner 21B for the inspection probe. Thus, in this embodiment, the floating plate 61B is positioned opposite the micropositioner 21B for the inspection probe, thereby more reliably preventing the first PCB substrate 22B from being pressed against it and thus preventing deformation of the first PCB substrate 22B.

[0070] In a preferred embodiment, the size of the floating plate 61B is larger than the size of the micropositioner 21B for the inspection probe and smaller than the size of the lower sealing lid 30B. In other embodiments, the size of the floating plate 61B may be set based on specific design requirements, for example, to be larger than the size of the lower sealing lid 30B.

[0071] Figure 14 is a schematic mounting diagram of the floating plate 61B and the lower cover plate 111B in the wafer-level aging inspection apparatus 100B shown in Figure 10, and Figure 15 is a schematic structural diagram of the upper cover plate 112B in the wafer-level aging inspection apparatus 100B shown in Figure 10. As shown in Figures 14 and 15, and also with reference to Figure 12, in this embodiment, at least one first mounting groove 113B is provided at the bottom of the upper cover plate 112B, at least one second mounting groove 62B is provided at the top of the floating plate 61B, each second mounting groove 62B corresponds to one first mounting groove 113B, and the expansion and contraction assembly 63B includes at least one elastic component 631B, each elastic component 631B being provided internally corresponding to one first mounting groove 113B and one second mounting groove 62B. Here, each elastic component 631B is passed through a connecting rod 632B, and the connecting rod 632B is connected to the upper cover plate 112B.

[0072] In a preferred embodiment, there are multiple elastic components 631B, which are uniformly arranged on the top of the floating plate 61B. There may also be multiple first mounting grooves 113B and second mounting grooves 62B, with multiple first mounting grooves 113B uniformly arranged in positions corresponding to the floating plate 61B and multiple second mounting grooves 62B uniformly arranged on the floating plate 61B, thereby ensuring that force is applied uniformly to the first PCB substrate 22B of the cover plate assembly 20B and avoiding localized deformation of the first PCB substrate 22B.

[0073] In this embodiment, the mounting frame 10B further includes a pair of slide grooves 70B connected to the lower cover plate 111B, and either of the slide grooves 70B also extends horizontally, with both ends of the cover plate assembly 20B slidably connected to the corresponding slide grooves 70B. The cover plate assembly 20B can be removed from the upper plate assembly 11B, and the corresponding cover plate assembly 20B can be replaced for different types of wafers, which facilitates the replacement of the cover plate assembly 20B, improves the convenience of wafer level aging inspection, and may also be understood to be useful for replacing the micropositioner for the inspection probe on the cover plate assembly 20B.

[0074] In this embodiment, the wafer-level aging inspection apparatus 100B further includes an imaging device 50B, which is mounted on a mounting frame 10B and is used to detect whether the first PCB substrate 22B is connected and forms an inspection chamber when the lower sealing lid 30B contacts the lid plate assembly 20B.

[0075] Figure 16 is a schematic diagram of the lifting mechanism in the wafer-level aging inspection apparatus shown in Figure 10. As shown in Figure 16 and with reference to Figure 10, in this embodiment, the wafer-level aging inspection clamp fixture further includes a heat sink and a heating device, the heat sink and heating device are located inside the inspection chamber, the lifting mechanism 40B includes an electrical assembly 41B, the electrical assembly 41B includes a second PCB substrate 411B, the uppermost part of the second PCB substrate 411B has a pad position 412B for supplying power to the heat sink and heating device, thereby performing wafer-level aging inspection on the wafer.

[0076] In this embodiment, the lifting mechanism 40B further includes a lifting assembly 42B connected to an electrical assembly 41B, the electrical assembly 41B being provided at the free end of the lifting assembly 42B, and the lifting assembly 42B drives the electrical assembly 41B upward, thereby moving the pad position 412B in cooperation with the lower sealing lid 30B, which is used to interlock the lower sealing lid 30B and move it upward until it contacts and connects with the lid plate assembly 20B, forming an inspection chamber.

[0077] In this embodiment, as the lifting mechanism 40B moves up and down, the uppermost pad of the second PCB substrate 411B of the electrical assembly 41B cooperates with the lower sealing lid 30B to supply power to the heating device and heat sink, thereby enabling high-pressure, high-temperature inspection of the wafer. In other words, the lifting mechanism 40B not only moves up to press and adhere to the wafer, but also provides the conditions for inspecting the wafer inside the lower sealing lid 30B, thereby optimizing the structure of the wafer level aging inspection apparatus 100B.

[0078] In this embodiment, the lifting assembly 42B includes a plurality of worm gear assemblies 422B and a motor 421B. Each of the plurality of worm gear assemblies 422B is connected to an electrical assembly 41B, and the motor 421B is connected to the plurality of worm gear assemblies 422B, thereby driving the plurality of worm gear assemblies 422B to synchronize and raise and lower the electrical assembly 41B. In other embodiments, the lifting assembly 42B may be other components, such as a cylinder.

[0079] The present invention further provides a clamping fixture for wafer-level aging inspection. The clamping fixture for wafer-level aging inspection includes a cover plate assembly and a lower sealing assembly. The cover plate assembly is connected to the lower sealing assembly to form an inspection chamber for housing a wafer.

[0080] Figure 17 is a schematic structural diagram of a wafer-level aging inspection clamp jig 100C according to one embodiment of the present invention, Figure 18 is a schematic exploded view of the wafer-level aging inspection clamp jig 100C according to one embodiment of the present invention, Figure 19 is a schematic positional diagram of the wafer-level aging inspection clamp jig 100C and external inspection device 200C according to one embodiment of the present invention, and Figure 20 is a schematic structural diagram of the PCB substrate 10C shown in Figure 18. In some embodiments, as shown in Figures 17 to 20, the wafer-level aging inspection clamp jig 100C includes a cover plate assembly 110C and a lower sealing assembly 120C, the cover plate assembly 110C being connected to the lower sealing assembly 120C to form an inspection chamber 121C for housing wafers. The cover plate assembly 110C includes a PCB substrate 10C, a micropositioner 20C for inspection probes, and at least one connector 30C. However, the PCB substrate 10C includes a first region 11C and a second region 12C, the first region 11C and the second region 12C being located on different sides of the PCB substrate 10C, and each of the first contacts 13C provided in the first region 11C is electrically connected to the corresponding second contact 14C provided in the second region 12C. The inspection probe micropositioner 20C is located at the bottom of the PCB substrate 10C and is connected to the PCB substrate 10C, and the inspection probe micropositioner 20C has a plurality of inspection probes 21C, each of which has one end in contact with the corresponding first contact 13C and the other end in contact with the wafer, thereby performing wafer-level aging inspection on the wafer. The connector 30C is attached to the second region 12C of the PCB substrate 10C, and each connector 30C is connected to the corresponding second contact 14C. Each connector 30C is connected to the external inspection device 200C by a wire harness 300C and is used to perform wafer-level aging inspection on the wafer.

[0081] Here, a probe hole is machined into the micropositioner 20C for the inspection probe, and the inspection probe 21C is a spring hole and is mounted inside the probe hole, and the inspection probe 21C may be understood to pierce a chip on the wafer and energize the chip. The first region 11C and the second region 12C are two non-overlapping and electrically connected regions on the PCB substrate 10C, with a first contact 13C provided on the surface of the first region 11C, and each of the first contacts is electrically connected by an internal circuit of the PCB substrate 10C to a corresponding second contact 14C provided in the second region 12C, and the external inspection device 200C is connected to a connector 30C on the second region 12C by a flexible wire harness 300C or cable, the second region 12C transmits an inspection signal to the first region 11C, and the first region 11C transmits the signal to the wafer in the inspection chamber 121C by the inspection probe 21C, thereby performing wafer level aging inspection on the wafer. Connector 30C is flexibly connected to the external inspection device 200C, and its structure is simple, while its layout is flexible and reliable.

[0082] In this embodiment, a connector 30C is newly installed in the second region 12C of the PCB substrate 10C, and the connector 30C is connected to the external inspection device 200C using a wire harness 300C. This cancels the conventional method of connection using a probe, that is, it replaces a rigid connection with a flexible connection, which allows the relative positions of the wafer-level aging inspection clamp jig 100C and the external inspection device 200C to be set flexibly, reduces the structural correlation between the wafer-level aging inspection clamp jig 100C and the external inspection device 200C, and increases the number of channels that supply power to the wafer. Furthermore, when connecting to the external inspection device 200C using a probe, there are many contact points and the reliability of the circuit connection is low, but in the present invention, the connection is made using a wire harness 300C and there are no contact points, thereby improving the reliability of the circuit connection, and the wafer-level aging inspection clamp jig 100C can be conveniently attached and detached independently, thus improving maintainability.

[0083] The wafer-level aging inspection clamp jig 100C of the present invention has a compact structure and high integration density, which increases the number of channels connected to the hardware in a small size, supporting wafer-level aging inspection up to 8 inches of SiC wafers and providing more than 2000 channels for power supply and wafer-level aging inspection.

[0084] In this embodiment, there are multiple connectors 30C, which are arranged in an array on the PCB substrate 10C. The multiple connectors 30C are densely attached to the second region 12C and connected to the external inspection device 200C by a flexible wire harness 300C or cable. By arranging the connectors 30C in an array, the second region 12C of the PCB substrate 10C can be fully utilized, saving the usable area of ​​the PCB substrate 10C, and further increasing the number of power supply channels per unit area, thereby realizing high-density, multi-channel wafer-level aging inspection.

[0085] Figure 21 is a schematic diagram of the structure of a micropositioner 20C for an inspection probe according to one embodiment of the present invention, Figure 22 is a schematic enlarged view of location A in Figure 21, Figure 23 is a schematic diagram of the structure of a connecting component 40 according to the present invention, and Figure 24 is a schematic enlarged view of location B in Figure 23. As shown in Figures 21 to 24, in this embodiment, the micropositioner 20C for an inspection probe is circular, the wafer level aging inspection clamp fixture 100C further includes an annular connecting component 40C, the connecting component 40C is connected to a PCB substrate 10C, the connecting component 40C is fitted onto the outer circumference of the micropositioner 20C for an inspection probe and is connected to the micropositioner 20C for an inspection probe. Here, the connecting component 40C presses against the micropositioner 20C for the inspection probe and locks into it, thereby fixing the micropositioner 20C to the PCB substrate 10C and improving the structural stability of the wafer level aging inspection clamp fixture 100C. In this embodiment, the connecting component 40C and the PCB substrate are connected by bolts.

[0086] In this embodiment, the micropositioner 20C for the inspection probe is made of a material with high hardness and low expansion coefficient. When using the wafer-level aging inspection clamp fixture 100C, the micropositioner 20C for the inspection probe and the PCB substrate 10C must be fixed to each other in specific positions, and there must be no relative displacement; otherwise, the inspection probe 21C on the micropositioner 20C for the inspection probe will be unable to contact the PCB substrate 10C and will be blocked. In conventional designs, the micropositioner 20C for the inspection probe and the connecting component 40C are positioned by the cooperation of a pin and a cylindrical hole. When using the inspection probe micropositioner 20C, the ambient temperature can reach nearly 200°C. High temperatures inevitably cause both the inspection probe micropositioner 20C and the connecting component 40C to expand. Because the materials of the two components are different and the expansion rates differ significantly, the pin and cylindrical hole press against each other, generating very large stresses. Furthermore, this can lead to problems such as cracking damage to the inspection probe micropositioner 20C or deformation of the connecting component 40C, making removal difficult.

[0087] In this embodiment, at least one groove 22C is provided on the edge of the micropositioner 20C for the inspection probe. The connecting component 40C has a support portion 41C for supporting the micropositioner 20C for the inspection probe, and at least one positioning post 42C is provided on the support portion 41C, with each positioning post 42C positioned corresponding to one groove 22C, thereby positioning the micropositioner 20C for the inspection probe. The cooperation of the positioning post 42C and the groove 22C limits the position of the micropositioner 20C for the inspection probe, and when the micropositioner 20C for the inspection probe and the connecting component 40C expand due to heating, the positioning post 42C can slide slightly within the groove 22C, avoiding pressing against the groove 22C, thereby relieving stress on the micropositioner 20C and the connecting component 40C during expansion, and preventing deformation of the micropositioner 20C and the connecting component 40C. In this embodiment, the number of grooves 22C and positioning posts 42C is set to three, and the three grooves 22C are distributed at intervals along the circumferential direction of the micropositioner 20C for the inspection probe, along the edge of the micropositioner.

[0088] In this embodiment, the opening of the groove 22C is provided facing the corresponding positioning post 42C. Here, the groove 22C is not closed, and the positioning post 42C only contacts two sides of the micropositioner along the circumferential direction on the groove 22C. When the inspection probe micropositioner 20C and connecting component 40C expand due to heating, the positioning post 42C can slide slightly along the radial direction of the inspection probe micropositioner 20C within the groove 22C, so that the positioning post 42C does not press against the groove 22C, and stress and deformation of the inspection probe micropositioner 20C and connecting component 40C during expansion are avoided.

[0089] The lid assembly 110C and the lower sealing assembly 120C are connected to form an airtight, sealed inspection chamber 121C. A seal ring 122C is provided at the top of the lower sealing assembly 120C. When the lower sealing assembly 120C moves upward, the seal ring 122C first connects to the PCB substrate 10C, then compresses, and after compression, an airtight seal is formed. The airtight inspection chamber 121C has a constant air pressure, generating a pressing force that connects the lower sealing assembly 120C and the PCB substrate 10C. However, if the pressing force inside the inspection chamber 121C is too large, the lower sealing assembly 120C will come into contact with the PCB substrate 10C and transmit an excessively large force to the PCB substrate 10C.

[0090] Figure 25 is a schematic positional diagram of a load-bearing component 60C according to one embodiment of the present invention, and Figure 26 is a schematic structural diagram of the load-bearing component 60C shown in Figure 25. As shown in Figures 25 and 26, in this embodiment, the wafer-level aging inspection clamping jig 100C further includes a circular upper sealing lid 50C, the upper sealing lid 50C is located at the top of the PCB substrate 10C. The wafer-level aging inspection clamping jig 100C further includes a plurality of load-bearing components 60C arranged at intervals along the circumferential direction of the upper sealing lid 50C, each load-bearing component 60C including a load-bearing column 61C, the load-bearing column 61C passing through the PCB substrate 10C and connected to the upper sealing lid 50C, and the load-bearing column 61C protruding from the bottom surface of the PCB substrate 10C. Here, the upper sealing lid 50C is tightly connected to the PCB substrate 10C by the sealing ring 122C of the lower sealing assembly 120C, providing airtightness to the top of the first region 11C. The PCB substrate 10C has load-bearing columns 61C spaced along the circumferential direction of the upper sealing lid 50C, which protrude from the bottom surface of the PCB substrate 10C. When the pressing and sealing force in the inspection chamber 121C is too great and the lower sealing lid 120C is too close to the PCB substrate 10C, the load-bearing columns 61C contact the lower sealing lid 120C before the PCB substrate 10C, absorbing the pressing and sealing force of the inspection chamber 121C, thereby preventing the PCB substrate 10C from being subjected to excessive pressure.

[0091] In this embodiment, the height of the load-bearing column 61C protruding from the bottom surface of the PCB substrate 10C is a value within the range of 0.1 to 0.2 mm. If the height of the load-bearing column 61C protruding from the bottom surface of the PCB substrate 10C is too high, it will affect the airtightness between the PCB substrate 10C and the lower sealing lid 120C, and if it is too low, the load-bearing effect will not be easily exerted. In this embodiment, the height of the load-bearing column 61C protruding from the bottom surface of the PCB substrate 10C is 0.1 mm, so when the pressing and sealing force of the inspection chamber 121C is too large, it is possible to connect to the lower sealing lid 120C before the PCB substrate 10C, thereby preventing the PCB substrate 10C from being subjected to excessive pressure and being damaged.

[0092] In this embodiment, the load-bearing component 60C further includes at least one spacer 62C fitted onto the load-bearing column 61C, thereby adjusting the height to which the load-bearing column 61C protrudes from the bottom surface of the PCB substrate 10C. In this embodiment, the thickness of each spacer 62C is 0.1 mm, and the height to which the load-bearing column 61C protrudes from the bottom surface of the PCB substrate 10C may be adjusted by adjusting the number of spacers 62C.

[0093] In this embodiment, the wafer-level aging inspection clamp fixture 100C further includes a heat dissipation component 70C attached to the PCB substrate 10C, the heat dissipation component 70C being located between the first region 11C and the second region 12C and used to block the heat generated in the first region 11C. During the wafer-level aging inspection process, the wafer is continuously heated, causing the temperature of the first region 11C to be high, and the heat diffuses to affect other regions of the PCB substrate 10C. The high temperature adversely affects the connector 30C and further affects the accuracy of the wafer-level aging inspection. To avoid the high temperature affecting the connector 30C, the present invention provides a heat dissipation component 70C between the first region 11C and the second region 12C.

[0094] In this embodiment, a copper foil sheet is laid on the surface of the PCB substrate 10C where the heat dissipation component 70C is to be attached. This concentrates the diffused heat from the first region 11C at the location where the heat dissipation component 70C is attached. The heat dissipation component 70C includes a fan and heat dissipation fins. The fan is located on the side edge along the width direction of the PCB substrate 10C, generating an airflow that can carry away the heat. The airflow blows from the PCB substrate 10C along one side in the width direction to the other, preventing the heat from the first region 11C from diffusing to the second region 12C. This prevents high temperatures from affecting the connector 30C, protects the wafer-level aging inspection clamp fixture 100C, and improves the accuracy of the wafer-level aging inspection.

[0095] In this embodiment, the wafer-level aging inspection clamp fixture 100C further includes a structural component 80C located at the top of the PCB substrate 10C and connected to the upper sealing lid 50C. The wafer-level aging inspection clamp fixture 100C further includes a plurality of reinforcing components 90C located at the top of the PCB substrate 10C, the plurality of reinforcing components 90C being provided on the outer periphery of the structural component 80C, the edge of the PCB substrate 10C, and the second region 12C, respectively. Here, the reinforcing components 90C are connected by screws between adjacent sets of connectors 30C on the periphery of the PCB substrate 10C and on the second region 12C, thereby improving the structural strength of the wafer-level aging inspection clamp fixture 100C. The structural component 80C is simultaneously connected to the reinforcing components 90C on the first region 11C and to the PCB substrate 10C, thereby providing strength to the stressed areas of the PCB substrate 10C.

[0096] Figure 27 is a schematic diagram of the lifting mechanism 400C according to one embodiment of the present invention. As shown in Figure 27, the embodiment further provides a wafer-level aging inspection apparatus, which includes a wafer-level aging inspection clamp jig 100C and a lifting mechanism 400C. The lifting mechanism 400C is provided to extend and retract vertically under control, and the lifting mechanism 400C movably contacts the wafer-level aging inspection clamp jig 100C, thereby moving the lower sealing assembly 120C upward in conjunction with it, connecting it to the cover plate assembly 110C, and forming an inspection chamber 121C.

[0097] Before using the wafer-level aging inspection clamping jig 100C of the present invention, the connector 30C is first connected to the external inspection device 200C and the hardware circuit. When the wafer-level aging inspection clamping jig 100C is operated, the cover plate assembly 110C connects to the lower sealing assembly 120C to form an airtight inspection chamber 121C, thereby performing wafer-level aging inspection on the wafer. Specifically, the wafer is placed in a specific position within the inspection chamber 121C, the cover plate assembly 110C remains stationary, and the lower sealing assembly 120C is lifted from below the micropositioner 20C for the inspection probe. When the seal ring 122C of the lower sealing assembly 120C connects to the PCB substrate 10C and is slightly compressed, an airtight, sealed inspection chamber 121C is formed.

[0098] During the process of lifting the lower sealing assembly 120C, the inspection probe 21C on the micropositioner 20C for the inspection probe pierces a specific inspection point on the wafer surface. The inspection probe 21C is a spring hole and is compressed by a predetermined stroke. The tip of the inspection probe 21C contacts the wafer surface and generates a predetermined pressure, forming a circuit for power supply aging and inspection of the wafer, allowing power supply aging and inspection of the wafer to be performed at this time. The lower sealing assembly 120C, together with the PCB substrate 10C and the upper sealing lid 50C, forms an airtight space, and the wafer can be protected by filling the airtight space with a specific compressed gas. In high-pressure inspection, the compressed gas can prevent high-voltage arcs from damaging the inspection probe 21C or the wafer.

[0099] Figure 28 is a schematic structural diagram of a heating device according to one embodiment of the present invention, Figure 29 is a schematic cross-sectional view of a heating device according to one embodiment of the present invention, Figure 30 is a schematic local enlargement view of location A shown in Figure 29, Figure 31 is a schematic cross-sectional view of a heating device according to one embodiment of the present invention viewed from a different angle, and Figure 32 is a schematic local enlargement view of location B shown in Figure 31. In some embodiments, as shown in Figures 28 to 32, the present invention provides a wafer-level aging inspection clamp jig 400D. The wafer level aging inspection clamp fixture 400D includes a cover plate assembly 80D, a lower sealing assembly 210D, and a heat sink 230D for placing a wafer 300D. The cover plate assembly 80D is connected to the lower sealing assembly 210D to form an inspection chamber 211D, the heat sink 230D is located inside the inspection chamber 211D, and the heating device 100D is located inside the inspection chamber 211D. The heat sink 230D is stacked on top of the heating device 100D, and the heating device 100D is electrically connected to an electrical assembly 226D located below the lower sealing assembly 210D. The heating device 100D includes a film heater layer 10D and a connecting assembly 20D, and the film heater layer 10D is uniform The film heater layer 10D is provided on the side of the heat sink 230D away from the wafer 300D, and the heat sink 230D heats the wafer 300D. The connection assembly 20D includes at least one set of first connection probes 21D that pass through the lower sealing assembly 210D, with one end of each of the first connection probes 21D in contact with the corresponding power supply port 12D and the other end passing through the lower sealing assembly 210D to contact the electrical assembly 226D, thereby supplying power to the film heater layer 10D and heating it, thereby heating the wafer 300D on the heat sink 230D.

[0100] The film heater layer 10D is in contact with the lifting mechanism 220D by the first connecting probe set 21D, which causes the lifting mechanism 220D to supply power to the resistance wire 11D inside the film heater layer 10D. As a result, the film heater layer 10D is uniformly conducted and heated by the power supply port 12D, thereby achieving uniform heating of the wafer 300D by the heating device 100D and avoiding damage to the wafer 300D or affecting the inspection effect due to uneven heating. Here, the wafer 300D, heat sink 230D, and heating device 100D are sequentially arranged from top to bottom in the inspection chamber 211D of the lower sealing assembly 210D, and there may be one or more first connecting probe sets 21D, and there may be one or more power supply ports 12D.

[0101] As shown in Figure 30, in this embodiment, resistance wires 11D are uniformly arranged within the film heater layer 10D, and the first connection probe set 21D is used to contact the power supply port 12D and the lifting mechanism 220D of the film heater layer 10D, respectively, thereby making them conductive. This enables heating by electrical connection of the resistance wires 11D, thereby achieving uniform heating of the wafer 300D on the heat sink 230D of the film heater layer 10D. This avoids damage to the wafer 300D due to uneven heating, and improves the yield rate of the wafer 300D. Here, the film heater layer 10D is connected to the lifting mechanism 220D by the first connection probe set 21D to achieve conductive heating, and the heat transfer path is in the order of film heater layer 10D, heat sink 230D, and wafer 300D. This prevents the wafer 300D from directly contacting the heating device 100D and being damaged, thereby reducing the defect rate of the wafer 300D.

[0102] In this embodiment, the film heater layer 10D of the heating device 100D has uniformly arranged resistance wires 11D and at least one power supply port 12D connected to the resistance wires 11D, and the first connection probe set 21D is directly connected to the resistance wires 11D by the power supply port 12D, thereby achieving uniform heating of the film heater layer 10D and simplifying the structure of the heating device 100D by avoiding the need to provide multiple probe assemblies corresponding to multiple heating sheets.

[0103] In this embodiment, the film heater layer 10D is a mica heating sheet or a ceramic heating sheet. Specifically, the resistance wires 11D are uniformly distributed inside the mica heating sheet or ceramic heating sheet, so that the lifting mechanism 220D is connected to the resistance wires 11D by the first connecting probe set 21D, thereby conducting heat through the mica heating sheet or ceramic heating sheet and further achieving uniform heating of the wafer 300D located above the heat sink of the heating device 100D. Here, the size of the mica heating sheet or ceramic heating sheet matches the size of the heat sink 230D, so that the heating device 100D can heat the heat sink 230D uniformly, thereby resulting in uniform heating of the wafer 300D.

[0104] In a preferred embodiment, the film heater layer 10D is a mica heating sheet, and the manufacturing cost of the mica heating sheet is low, thereby reducing the manufacturing cost of the heating device 100D.

[0105] In this embodiment, the heating device 100D further includes a first insulating component 30D, which is located below the heat sink 230D, and the film heater layer 10D and the first insulating component 30D are provided as an integrated unit. Specifically, the first insulating component 30D and the film heater layer 10D are integrated and located at the bottom of the film heater layer 10D, so that the film heater layer 10D does not come into direct contact with the lower sealing assembly 210D when heated to a high temperature, thereby preventing damage to the wafer level aging inspection device 200D.

[0106] In this embodiment, the film heater layer 10D is located on the side of the first heat insulating component 30D closer to the heat sink 230D, and a first through-hole 31D is provided in the first heat insulating component 30D at a position corresponding to the power supply port 12D, so that all of the first connection probe sets 21D pass through the first through-hole 31D and make contact with the power supply port 12D. Specifically, the film heater layer 10D and the first heat insulating component 30D are integrated, and the first connection probe sets 21D are connected to the power supply port 12D of the film heater layer 10D by contacting the first through-hole 31D of the first heat insulating component 30D, thereby making the lifting mechanism 220D contact the resistance wire 11D inside the film heater layer 10D and making it conductive, thereby making the film heater layer 10D conductive and heating, thereby achieving uniform heating of the film heater layer 10D relative to the wafer 300D. Here, there are two first through holes 31D, two first connecting probe sets 21D, each first through hole 31D corresponds to one first connecting probe set 21D, and the two first through holes 31D are arranged symmetrically with respect to the center line of the first insulating component 30D.

[0107] In this embodiment, a second heat insulating component 40D is further included, the second heat insulating component 40D is located on the side of the first heat insulating component 30D away from the heat sink 230D, and the second heat insulating component 40D has a second through hole 41D corresponding to the first through hole 31D, and all of the first connection probe set 21D pass through the first through hole 31D and the second through hole 41D to contact the power supply port 12D. Specifically, the second heat insulating component 40D is further provided below the first heat insulating component 30D, thereby blocking the heat from the film heater layer 10D. Here, there are two second through-holes 41D, and one end of each first connecting probe set 21D passes through the first through-hole 31D and contacts and connects to the power supply port 12D of the film heater layer 10D, while the other end passes through the second through-hole 41D and contacts and connects to the power supply port 12D of the film heater layer 10D. As a result, the heating device 100D is connected to the lifting mechanism 220D by the first connecting probe set 21D, thereby conducting electricity through the film heater layer 10D and heating it, thereby achieving heating of the wafer 300D.

[0108] In this embodiment, the heating device 100D further includes a ceramic plate 50D located between the film heater layer 10D and the heat sink 230D for transferring heat generated in the film heater layer 10D to the heat sink 230D. Specifically, the ceramic plate 50D is provided between the film heater layer 10D and the heat sink 230D, and the size of the ceramic plate 50D matches the size of the film heater layer 10D and the heat sink 230D. This allows the ceramic plate 50D to uniformly transfer heat from the film heater layer 10D to the heat sink 230D, and then to the wafer 300D. The film heater layer 10D avoids direct contact with the heat sink 230D, preventing overheating of the heat sink 230D, thereby preventing the wafer 300D from being damaged due to overheating.

[0109] As shown in Figure 32, in this embodiment, the heating device 100D further includes at least one first temperature sensor 60D and at least one second connecting probe set 22D, the first temperature sensor 60D being provided on the film heater layer 10D and used to measure the temperature of the film heater layer 10D, each of the second connecting probe sets 22D corresponding to one first temperature sensor 60D and passing through the lower sealing assembly 210D, one end of the second connecting probe set 22D contacting the first temperature sensor 60D and the other end contacting the lifting mechanism 220D. Specifically, the second connection probe set 22D is used to connect the first temperature sensor 60D located on the film heater layer 10D to the lifting mechanism 220D. This allows the first temperature sensor 60D to measure the temperature of the film heater layer 10D in real time, preventing irreversible damage to the heat sink 230D and wafer 300D when the temperature of the film heater layer 10D becomes too high, and also preventing the lifting mechanism 220D located below the lower sealing assembly 210D from breaking due to overheating. Here, there are two first temperature sensors 60D and two second connection probe sets 22D. Each first temperature sensor 60D corresponds to one second connection probe set 22D, and the two second connection probe sets 22D are the main temperature control inspection probe set and the overheat protection probe set for the film heater layer 10D, respectively.

[0110] In this embodiment, the heating device 100D further includes a second temperature sensor 70D and a third connecting probe set 23D. The second temperature sensor 70D is provided on the heat sink 230D and is used to measure the temperature of the heat sink 230D. Each third connecting probe set 23D corresponds to one second temperature sensor 70D and passes sequentially through the lower sealing assembly 210D, the second insulation component 40D, the first insulation component 30D, the film heater layer 10D, and the ceramic plate 50D. One end of the third connecting probe set 23D contacts the second temperature sensor 70D, and the other end contacts the lifting mechanism 220D. This allows the second temperature sensor 70D to measure the temperature of the heat sink 230D while energized, preventing the temperature of the heat sink 230D from becoming too high and damaging the wafer 300D, thereby improving the yield rate of the wafer 300D.

[0111] In this embodiment, the heating device 100D further includes a fourth connecting probe set 24D that directly contacts the heat sink 230D. Each fourth connecting probe set 24D sequentially passes through the lower sealing assembly 210D, the second insulating component 40D, the first insulating component 30D, the film heater layer 10D, and the ceramic plate 50D before contacting the heat sink 230D. One end of the fourth connecting probe set 24D contacts the heat sink 230D, and the other end contacts the lifting mechanism 220D. The lifting mechanism 220D supplies power to the heat sink 230D, thereby performing a power supply test on the wafer 300D.

[0112] Figure 33 is a schematic structural diagram of a wafer-level aging inspection apparatus according to one embodiment of the present invention, Figure 34 is a schematic cross-sectional view of a partial structure of a wafer-level aging inspection apparatus according to one embodiment of the present invention, and Figure 35 is a schematic local enlargement view of location C shown in Figure 34. As shown in Figures 33 to 35, the present invention further provides a wafer-level aging inspection apparatus 200D including a wafer-level aging inspection clamp jig 400D and a lifting mechanism 220D, wherein the lifting mechanism 220D includes a lifting assembly 225D and an electrical assembly 226D, the electrical assembly 226D is provided at the free end of the lifting assembly 225D, and the electrical assembly 226D is provided to supply power to a heating device 100D when connected to the wafer-level aging inspection clamp jig 400D, thereby heating the wafer 300D to perform wafer-level aging inspection.

[0113] Specifically, the wafer-level aging inspection apparatus 200D of this embodiment has a lower sealing assembly 210D, and the wafer 300D, heat sink 230D, and heating device 100D are sequentially arranged from top to bottom within the inspection chamber 211D of the lower sealing assembly 210D, and the lifting mechanism 220D is located below the lower sealing assembly 210D and supplies power to the film heater layer 10D. In other words, both ends of the first connecting probe set 21D inside the heating device 100D are connected to the lifting mechanism 220D and the film heater layer 10D, respectively, thereby conducting electricity through the film heater layer 10D and heating it, which in turn heats the heat sink 230D and the wafer 300D located above the heat sink 230D, and further enables high-temperature wafer-level aging inspection of the wafer 300D by the wafer-level aging inspection apparatus 200D.

[0114] In this embodiment, at least one first pad position 221D is provided on the surface of the lifting mechanism 220D facing the wafer-level aging inspection clamp fixture, and each first connection probe set 21D of the heating device 100D penetrates the lower sealing assembly 210D and contacts one of the first pad positions 221D, thereby enabling the electrical assembly 226D to supply power to the film heater layer 10D. Specifically, the first connection probe set 21D passes through the lower sealing assembly 210D and contacts the uppermost first pad position of the lifting mechanism 220D, thereby enabling the lifting mechanism 220D to supply power to the film heater layer 10D and heat it. Here, there are two first pad positions 221D, and each first pad position 221D is positioned corresponding to one power supply port 12D of the film heater layer 10D.

[0115] In this embodiment, at least one second pad position 222D is provided at the top of the lifting mechanism 220D, one end of each second connecting probe set 22D of the heating device 100D penetrates the lower sealing assembly 210D and contacts one second pad position 222D, and the other end contacts a first temperature sensor 60D inside the film heater layer 10D, thereby allowing the lifting mechanism 220D to supply power to the first temperature sensor 60D to measure the temperature of the film heater layer 10D in real time, preventing the film heater layer 10D from becoming too hot and damaging other structures of the wafer level aging inspection device 200D. Here, there are two second pad positions 222D, each second pad position 222D is positioned corresponding to one first temperature sensor 60D in the film heater layer 10D.

[0116] In this embodiment, a third pad position 223D is provided at the top of the lifting mechanism 220D, one end of the third connecting probe set 23D of the heating device 100D penetrates the lower sealing assembly 210D and contacts one of the third pad positions 223D, and the other end contacts a second temperature sensor 70D inside the heat sink 230D, thereby allowing the lifting mechanism 220D to supply power to the second temperature sensor 70D and measure the temperature of the heat sink 230D in real time, preventing the heat sink 230D from becoming too hot and damaging the wafer 300D.

[0117] In this embodiment, a fourth pad position 224D is provided at the top of the lifting mechanism 220D, one end of the fourth connecting probe set 24D of the heating device 100D penetrates the lower sealing assembly 210D and contacts one of the fourth pad positions 224D, and the other end contacts the heat sink 230D, thereby powering the heat sink 230D with the lifting mechanism 220D, and performing a power supply test on the wafer 300D.

[0118] In this embodiment, the number of first pad positions 221D matches the number of first connection probe sets 21D and corresponds one-to-one. Specifically, each first pad position 221D corresponds to one first connection probe set 21D, so that each power supply port 12D of the film heater layer 10D is positioned to correspond to one first connection probe set 21D, so that the two power supply ports 12D of the film heater layer 10D can conduct and heat simultaneously, improving the heating efficiency of the film heater layer 10D.

[0119] The heating device 100D of this embodiment includes a film heater layer 10D and a connection assembly 20D, the film heater layer 10D having uniformly arranged resistance wires 11D and at least one power supply port 12D connected to the resistance wires 11D, the film heater layer 10D being provided on the side of the heat sink 230D away from the wafer 300D, the heat sink 230D heating the wafer 300D, and the connection assembly 20D includes at least one set of first connection probe sets 21D passing through the lower sealing assembly 210D, the first connection probe set 2 Each end of 1D has contact with the corresponding power supply port 12D, and the other end passes through the lower sealing assembly 210D and contacts the electrical assembly 226D, thereby supplying power to the film heater layer 10D and heating it, which in turn heats the wafer 300D on the heat sink 230D. The film heater layer 10D, having uniformly distributed resistance wires 11D, can heat the wafer 300D uniformly, avoiding damage caused by uneven heating to the wafer 300D and improving the yield rate of the wafer 300D. Furthermore, the heating device 100D of the present invention further includes a ceramic plate 50D, which is located between the second heat insulating component 40D and the heat sink 230D. The ceramic plate 50D is used to transfer the heat generated in the film heater layer 10D to the heat sink 230D, thereby preventing damage to the wafer 300D due to localized overheating of the heating device 100D when it is in direct contact with the wafer 300D, and thereby reducing the defect rate of the wafer 300D in the wafer level aging inspection process.

[0120] While this specification provides and describes in detail several exemplary embodiments of the present invention, those skilled in the art should understand that, without departing from the spirit and scope of the invention, many other variations or modifications that conform to the principles of the invention can still be directly determined or derived based on the content disclosed herein. Therefore, the scope of the present invention should be understood and determined to cover all such other variations or modifications.

Claims

1. The apparatus includes a cover plate assembly, a bottom sealing assembly, a heat sink, and a heating device, the heat sink being used to support a wafer, the cover plate assembly including a first PCB substrate and a micropositioner for an inspection probe connected to the first PCB substrate, the bottom sealing assembly including a bottom sealing lid, the bottom sealing lid being connected to the cover plate assembly to form an inspection chamber, the heat sink and the heating device being located within the inspection chamber, the heating device being located between the bottom sealing lid and the heat sink, and a wafer level aging inspection clamping jig provided within the bottom sealing lid. A lifting mechanism provided to extend and retract vertically under control, which movably contacts the wafer-level aging inspection clamp jig, thereby moving the lower sealing assembly upward in conjunction with it to connect to the lid plate assembly and form the inspection chamber, The lifting mechanism includes a lifting assembly and an electrical assembly, the electrical assembly being provided at the free end of the lifting assembly, the electrical assembly being movably connected to the lower sealing assembly, and the electrical assembly supplying power to the heating device and the heat sink, thereby enabling wafer-level aging testing of the wafer. A wafer level aging inspection apparatus, wherein the heating device includes at least one set of first connecting probes that pass through the lower sealing lid, the first connecting probes contact the electrical assembly, the electrical assembly supplies power to the heating device, and thereby heats the wafer on the heat sink.

2. The aforementioned heating device The film heater layer includes uniformly arranged resistance wires and at least one power supply port connected to the resistance wires. The wafer level aging inspection apparatus according to claim 1, wherein one end of each first connection probe set is in contact with one of the power supply ports and the other end is in contact with the electrical assembly, thereby the electrical assembly supplies power to the film heater layer, thereby heating the wafer on the heat sink.

3. The aforementioned electrical assembly A wafer level aging inspection apparatus according to claim 2, comprising a second PCB substrate connected to an external circuit, wherein at least one first pad position is provided at its uppermost part, and each of the first pad positions is arranged to correspond to one of the first connection probe sets, thereby causing the external circuit to supply power to the heating device via the second PCB substrate when in contact with the first connection probe set, thereby performing a heating inspection on the wafer.

4. The lower sealing lid is further provided with at least one second connection probe set that contacts the heat sink. At least one second pad position is further provided at the top of the second PCB substrate, and each second pad position is arranged to correspond to one second connection probe set, so that when the external circuit makes contact with the second connection probe set, the second PCB substrate supplies power to the heat sink, thereby performing a power supply test on the wafer, provided that a plurality of first gas holes are provided at the bottom of the lower sealing lid, and a plurality of second gas holes are provided on the second PCB substrate, each second gas hole corresponds to one first gas hole, and the electrical assembly, The wafer level aging inspection apparatus according to claim 3, further comprising an adapter plate provided below the second PCB substrate, having a gas channel communicating with a plurality of second gas holes, thereby creating a vacuum in the lower sealing lid through the gas channel, the second gas holes and the first gas holes, and thereby adsorbing the heat sink and the wafer.

5. The first PCB substrate includes a first interface set and a second interface set, and the micropositioner for the inspection probe includes a plurality of inspection probes. The first interface set is provided on the first side surface of the first PCB substrate facing the lower sealing assembly, and one end of each of the inspection probes is connected to the corresponding first interface included in the first interface set, and the other end is connected to the wafer, thereby performing wafer-level aging inspection on the wafer. The second interface set may be provided on any second side of the first PCB board other than the first side. The aforementioned clamping jig for wafer level aging inspection, A wafer-level aging inspection apparatus according to any one of claims 1 to 4, further comprising a plurality of connectors attached to the second side surface of the first PCB substrate, each of which is connected to a corresponding second interface included in the second interface set, and each of which is connected to an external inspection device by a wire harness, and which is used to perform wafer-level aging inspection on the wafer.

6. The mounting bracket further includes, Base plate assembly and A support platform for supporting the lower sealing assembly, A pair of first slide grooves connected to the bottom plate assembly, each extending horizontally, and both ends of the support platform being slidably connected to the corresponding first slide grooves, the lower sealing assembly includes the first slide grooves which are moved along the extending direction of the first slide grooves in conjunction with the support platform, A wafer level aging inspection apparatus according to any one of claims 1 to 4, wherein when a wafer is loaded or unloaded, the lower sealing assembly slides out along the first slide groove to the outside of the mounting frame, and after the wafer loading or loading is completed, the lower sealing assembly returns to the mounting frame along the first slide groove.

7. The aforementioned mounting bracket, An upper plate assembly connected to the base plate assembly by multiple support columns, The wafer level aging inspection apparatus according to claim 6, further comprising a pair of second slide grooves connected to the upper plate assembly, each extending horizontally, and both ends of the cover plate assembly being slidably connected to the corresponding second slide grooves.

8. The assembly includes an upper plate assembly and a lower plate assembly, the upper plate assembly and the lower plate assembly being connected by a support column, the wafer level aging inspection clamping fixture being located below the upper plate assembly and connected to the upper plate assembly, and the lifting mechanism being a mounting base attached to the lower plate assembly. The wafer level aging inspection apparatus according to claim 1, further comprising: a floating mechanism provided in the upper plate assembly, which floats when the lid plate assembly is pressed against the lower sealing lid, thereby preventing deformation of the lid plate assembly.

9. The upper plate assembly includes an upper cover plate and a lower cover plate, the lower cover plate has a limiting groove, and the floating mechanism is A floating plate provided at the uppermost part of the cover plate assembly and located in the limiting groove, the floating plate protruding from the bottom of the lower cover plate, A wafer level aging inspection apparatus according to claim 8, comprising: an expandable / contractable assembly connected to the upper cover plate and having its bottom connected to or in contact with the floating plate, thereby compressing when the floating plate is pressed against the cover plate assembly, thereby moving the floating plate upward.

10. The floating plate is circular and positioned opposite the micropositioner for the inspection probe. The wafer level aging inspection apparatus according to claim 9, wherein the size of the floating plate is larger than the size of the micropositioner for the inspection probe and smaller than the size of the lower sealing lid.

11. At least one first mounting groove is provided at the bottom of the upper cover plate, and at least one second mounting groove is provided at the top of the floating plate, and each of the second mounting grooves corresponds to one of the first mounting grooves, and the telescopic assembly is, At least one elastic component, each of which is provided internally in a first mounting groove and a second mounting groove, The wafer level aging inspection apparatus according to claim 10, wherein the number of elastic components is optionally multiple, and the multiple elastic components are uniformly arranged on the uppermost part of the floating plate.

12. The aforementioned lifting mechanism An electrical assembly comprising a second PCB substrate, wherein the uppermost part of the second PCB substrate has a pad position for supplying power to the heating device and the heat sink, thereby performing wafer-level aging inspection on the wafer, A wafer level aging inspection apparatus according to any one of claims 8 to 11, comprising a lifting assembly, the lifting assembly comprising an electrical assembly provided at the free end of the lifting assembly, the electrical assembly being driven to move upward so that the pad position cooperates with the lower sealing lid, and the lifting assembly is used to interlock and move upward until it connects to the lid plate assembly to form the inspection chamber.

13. The aforementioned lifting assembly, Each of the above electrical assemblies is connected to a plurality of worm gear assemblies, A wafer level aging inspection apparatus according to claim 12, comprising: a motor connected to a plurality of the worm gear assemblies, thereby driving the plurality of the worm gear assemblies to raise and lower the electrical assembly in a linked manner.

14. A loading / unloading device, at least one inspection device, and at least one wafer-level aging inspection apparatus according to any one of claims 1 to 4, 8 to 11, The loading / unloading device is used to place the wafer in the corresponding wafer-level aging inspection apparatus and perform wafer-level aging inspection. A wafer-level aging inspection system that performs wafer-level aging inspection by connecting any of the wafer-level aging inspection devices to the corresponding inspection equipment.

15. After the wafer loading is complete, the lifting mechanism is controlled to raise it to a first height, thereby connecting the lifting mechanism to the lower sealing assembly. The lifting mechanism is controlled to subsequently raise the lower sealing assembly to a second height in conjunction with it, thereby moving the lower sealing assembly until it connects to the lid plate assembly and forms an inspection chamber. An inspection method for use in a wafer-level aging inspection apparatus according to any one of claims 1 to 4, comprising the step of supplying power to a micropositioner for an inspection probe included in a heating device, a heat sink, and a cover plate assembly, thereby performing a wafer-level aging inspection on the wafer.

16. The apparatus includes a cover plate assembly, a bottom sealing assembly, a heat sink for placing a wafer, and a heating device, wherein the cover plate assembly includes a PCB substrate and a micropositioner for an inspection probe connected to the PCB substrate, the bottom sealing assembly includes a bottom sealing lid, the bottom sealing lid is connected to the cover plate assembly to form an inspection chamber, the heat sink and the heating device are located inside the inspection chamber, and the heating device is located between the bottom sealing lid and the heat sink. A clamping jig for wafer level aging inspection, comprising a heating device which includes at least one set of first connecting probes passing through the lower sealing lid and provided within the lower sealing lid, wherein a vertically extendable lifting mechanism including a lifting assembly and an electrical assembly moves the lower sealing assembly upward in conjunction with the lifting assembly to connect it to the lid plate assembly to form the inspection chamber, and the electrical assembly of the lifting mechanism supplies power to the heating device and the heat sink.

17. The PCB substrate includes a first region and a second region, the first region and the second region each located on different sides of the PCB substrate, and each of the first contacts provided in the first region is electrically connected to the corresponding second contact provided in the second region. The micropositioner for the inspection probe is located at the bottom of the PCB substrate and has a plurality of inspection probes, each of which has one end in contact with the corresponding first contact and the other end in contact with the wafer, thereby performing wafer-level aging inspection on the wafer. The wafer-level aging inspection clamping fixture according to claim 16, wherein the cover plate assembly includes at least one connector attached to the second region of the PCB substrate, each of which is connected to the corresponding second contact, and each of the connectors is connected by a wire harness to an external inspection device and is used to perform wafer-level aging inspection on the wafer.

18. The aforementioned connectors are numerous, and the numerous connectors are arranged in an array on the PCB substrate. The micropositioner for the inspection probe is circular, and the clamp fixture for wafer level aging inspection is An annular connecting component that is connected to the PCB substrate, and is provided so as to surround the outer circumference of the micropositioner for the inspection probe, and further includes the connecting component that is connected to the micropositioner for the inspection probe, At least one groove is provided on the edge of the micropositioner for the inspection probe, The clamping fixture for wafer level aging inspection according to claim 17, wherein the connecting component has a support portion for supporting the micropositioner for the inspection probe, the support portion is provided with at least one positioning post, each positioning post is arranged in correspondence with one of the grooves, thereby positioning the micropositioner for the inspection probe, the opening of the groove is provided toward the corresponding positioning post.

19. A circular top sealing lid, further comprising the top sealing lid located at the top of the PCB substrate, and a plurality of load-bearing components arranged at intervals along the circumferential direction of the top sealing lid, each of the load-bearing components is A load-bearing column that passes through the PCB substrate and is connected to the upper sealing lid, the load-bearing column protruding from the bottom surface of the PCB substrate, and the height of the load-bearing column protruding from the bottom surface of the PCB substrate is any value between 0.1 and 0.2 mm, A clamping jig for wafer level aging inspection according to claim 18, comprising at least one spacer fitted onto the load-bearing column, thereby adjusting the height of the load-bearing column protruding from the bottom surface of the PCB substrate.

20. A clamping jig for wafer level aging inspection according to any one of claims 17 to 19, further comprising a heat dissipation component attached to the PCB substrate, the heat dissipation component located between the first region and the second region, for blocking heat generated in the first region.

21. The wafer level aging inspection clamping fixture further includes a structural component located at the top of the PCB substrate and connected to the upper sealing lid, The wafer level aging inspection clamping jig according to claim 19, further comprising a plurality of reinforcing components located at the uppermost part of the PCB substrate, the plurality of reinforcing components provided on the outer periphery of the structural component, the edge of the PCB substrate, and the second region, respectively.

22. The heat sink is stacked above the heating device, the heating device is electrically connected to an electrical assembly located below the lower sealing assembly, and the heating device A film heater layer having uniformly arranged resistance wires and at least one power supply port connected to the resistance wires, wherein the film heater layer is provided on the side of the heat sink away from the wafer and the heat sink heats the wafer, The wafer level aging inspection clamping fixture according to claim 16, wherein one end of each of the first connection probe sets contacts the corresponding power supply port, and the other end passes through the lower sealing assembly and contacts the electrical assembly, thereby the electrical assembly supplies power to the film heater layer.

23. The aforementioned film heater layer is a mica heating sheet or a ceramic heating sheet. The aforementioned clamping jig for wafer level aging inspection, A first heat insulating component located below the heat sink, further comprising a first heat insulating component in which the film heater layer and the first heat insulating component are provided as an integrated unit, The wafer level aging inspection clamping jig according to claim 22, wherein the film heater layer is located on the side of the first heat insulating component closer to the heat sink, and the first heat insulating component has a first through hole corresponding to the power supply port, so that any of the first connection probes pass through the first through hole and contact the power supply port.

24. A second heat insulating component located on the side of the first heat insulating component away from the heat sink, having a second through-hole corresponding to the first through-hole, and the second heat insulating component such that all of the first connection probes pass through the first through-hole and the second through-hole to contact the power supply port, The wafer level aging inspection clamping jig according to claim 23, further comprising a ceramic plate positioned between the film heater layer and the heat sink for transferring heat generated in the film heater layer to the heat sink.

25. The film heater layer is provided with at least one temperature sensor for measuring the temperature of the film heater layer, A wafer level aging inspection clamp fixture according to any one of claims 22 to 24, further comprising at least one second connecting probe set, each of which corresponds to one of the temperature sensors, and which passes through the lower sealing assembly, with one end in contact with the temperature sensor and the other end in contact with the lifting mechanism.

Images