UV resist, UV resist patterning methods and applications

The ultraviolet resist composition with zirconium oxide nanoclusters addresses the limitations of high exposure doses and low sensitivity in current resists, achieving improved sensitivity and mechanical properties for precise photolithography.

JP7883728B2Active Publication Date: 2026-07-02TSINGHUA UNIVERSITY +1
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Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
TSINGHUA UNIVERSITY
Filing Date
2023-04-11
Publication Date
2026-07-02

AI Technical Summary

Technical Problem

Current ultraviolet resists used in semiconductor manufacturing require high exposure doses and have low sensitivity, limiting the resolution and efficiency of photolithography processes.

Method used

An ultraviolet resist composition comprising zirconium oxide nanoclusters and a photosensitizer, which allows for reduced exposure doses and improved sensitivity, enabling smaller line widths and higher fidelity patterns.

Benefits of technology

The use of zirconium oxide nanoclusters as a film-forming resin in ultraviolet resists results in reduced exposure doses, improved sensitivity, and enhanced mechanical properties, allowing for precise and efficient photolithography with minimal pattern deformation.

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Abstract

Relates to the technical field of photoresists, specifically to ultraviolet resists, patterning methods and uses of ultraviolet resists. The ultraviolet resist contains an organic solvent, a photosensitizer and zirconium oxide nanoclusters. The general formula of the zirconium oxide nanoclusters is Zr x O y (OH) z L m wherein 2 ≦ x ≦ 20, 2 ≦ y ≦ 40, 0 ≦ z ≦ 40, 4 ≦ m ≦ 40, and L is a carboxy group-containing organic ligand. The photosensitizer has the structural formula (1), and in formula (1), R 1 is represented by formula (2), * represents the bonding site, and R 2 and R 3 are each independently selected from -F, -Cl, -Br or -I each time they appear. By selecting the photosensitizer, the exposure dose can be significantly reduced and the speed of the photoresist can be increased. <Chemical formula 1> JPEG2025518845000020.jpg34170<Chemical formula 2> JPEG2025518845000021.jpg17170
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