Method for manufacturing a vapor deposition mask, a random product to which a vapor deposition mask is assigned, and a vapor deposition mask

Abstract

To provide a vapor deposition mask without observing a dark space in a long side area when observed from a first or second surface side.SOLUTION: A vapor deposition mask including a pair of long sides 26, a pair of short sides, a first surface 20a and a second surface 20b positioned on the opposite side of the first surface 20a includes a tabular metal base material 21 and a plurality of open holes formed in the base material 21. In the cross-section of the vapor deposition mask, a curve surface expanding outward toward the side of the first surface 20a from the side of the second surface 20b is formed in the long side 26.SELECTED DRAWING: Figure 25A

Description

Technical Field

[0001] The present invention relates to a vapor deposition mask and a method for manufacturing the same. Further, the present invention relates to an intermediate product for producing a vapor deposition mask.

Background Art

[0002] In recent years, there has been a demand for display devices used in portable devices such as smartphones and tablet PCs to be high-definition, for example, having a pixel density of 400 ppi or more. Also, in portable devices, the demand for supporting ultra-high definition has been increasing. In this case, it is required that the pixel density of the display device is, for example, 800 ppi or more.

[0003] Among display devices, organic EL display devices have attracted attention due to their good responsiveness, low power consumption, and high contrast. As a method for forming pixels of an organic EL display device, a method using a vapor deposition mask in which through holes are formed in a desired pattern to form pixels in a desired pattern is known. Specifically, first, a vapor deposition mask is adhered to a substrate for an organic EL display device. Next, both the adhered vapor deposition mask and the substrate are put into a vapor deposition apparatus, and a vapor deposition process of vapor-depositing an organic material on the substrate is performed. Thereby, pixels containing an organic material can be formed on the substrate in a pattern corresponding to the pattern of the through holes of the vapor deposition mask.

[0004] In the vapor deposition process, the vapor deposition mask is fixed to a frame having a predetermined rigidity. For example, when the vapor deposition mask has a pair of long sides and a pair of short sides, the vapor deposition mask is fixed to the frame in a state of being pulled in the direction of the long sides. Thereby, it is possible to suppress the bending of the vapor deposition mask and improve the dimensional accuracy and position accuracy of the pixels.

[0005] As a method for manufacturing a vapor deposition mask, a method is known in which through-holes are formed in a metal plate by etching using photolithography technology, as disclosed in, for example, Patent Document 1. For example, first, a first resist pattern is formed on the first surface of the metal plate by exposure and development, and a second resist pattern is formed on the second surface of the metal plate by exposure and development. Next, the area of ​​the first surface of the metal plate that is not covered by the first resist pattern is etched to form a first opening on the first surface of the metal plate. Then, the area of ​​the second surface of the metal plate that is not covered by the second resist pattern is etched to form a second opening on the second surface of the metal plate. In this case, by performing etching so that the first opening and the second opening are connected, through-holes that penetrate the metal plate can be formed.

[0006] A known method for efficiently manufacturing vapor deposition masks involves first preparing a metal plate having an area corresponding to multiple vapor deposition masks, then forming numerous through-holes in the metal plate to be formed in the multiple vapor deposition masks, and finally extracting the individual vapor deposition masks from the metal plate. For example, in Patent Document 1, the vapor deposition masks are extracted from the metal plate by cutting along break lines. In Patent Document 1, the break lines are perforations formed on the metal plate in a pattern corresponding to the long and short sides of the vapor deposition masks. [Prior art documents] [Patent Documents]

[0007] [Patent Document 1] Japanese Patent Publication No. 2015-55007 [Overview of the project] [Problems that the invention aims to solve]

[0008] When observing the deposition mask from the first or second side, a black area may be observed in the region along the longer side. [Means for solving the problem]

[0009] The present invention is a vapor deposition mask, A metal plate-shaped substrate having a pair of long sides and a pair of short sides, a first surface and a second surface located opposite the first surface, The substrate comprises a plurality of through holes formed in the substrate, In the cross-section of the deposition mask, a curved surface is formed on the longer side that widens outward from the second surface side toward the first surface side.

[0010] In the deposition mask according to the present invention, the long side may have a cross-sectional shape that protrudes most outward at the portion where it intersects with the first surface.

[0011] The present invention is a vapor deposition mask, A metal plate-shaped substrate having a pair of long sides and a pair of short sides, a first surface and a second surface located opposite the first surface, The substrate comprises a plurality of through holes formed in the substrate, In the cross-section of the deposition mask, the long side has a curved surface located on the first surface side and a curved surface located on the second surface side. The aforementioned long side is a vapor deposition mask having a cross-sectional shape that protrudes most outward at the point where the curved surface on the first surface side and the curved surface on the second surface side intersect.

[0012] In the deposition mask according to the present invention, the portion where the long side and the first surface intersect may be located outside the portion where the long side and the second surface intersect.

[0013] In the vapor deposition mask according to the present invention, the through-hole includes a first recess formed on the first surface, a second recess formed on the second surface, and a circumferential connecting portion connecting the first recess and the second recess, and the distance from the first surface to the connecting portion in the direction normal to the first surface may be 6 μm or less.

[0014] In the vapor deposition mask according to the present invention, the thickness of the substrate may be 50 μm or less.

Brief Description of the Drawings

[0015] [Figure 1] It is a figure which shows the vapor deposition apparatus provided with the vapor deposition mask apparatus by one Embodiment of this invention. [Figure 2] It is a sectional view which shows the organic EL display device manufactured using the vapor deposition mask apparatus shown in FIG. 1. [Figure 3] It is a plan view which shows the vapor deposition mask apparatus by one Embodiment of this invention. [Figure 4] It is a partial plan view which shows the effective area of the vapor deposition mask shown in FIG. 3. [Figure 5] It is a sectional view taken along the line V-V of FIG. 4. [Figure 6] It is a sectional view taken along the line VI-VI of FIG. 4. [Figure 7] It is a sectional view taken along the line VII-VII of FIG. 4. [Figure 8] It is a sectional view which expands and shows the through-hole shown in FIG. 5 and the area in the vicinity thereof. [Figure 9] It is a schematic diagram for explaining as an example the manufacturing method of the vapor deposition mask. [Figure 10] It is a figure which shows the process of forming a resist film on a metal plate. [Figure 11] It is a figure which shows the process of closely adhering an exposure mask to the resist film. [Figure 12] It is a figure which shows the process of developing the resist film. [[ID=4l]] [Figure 13] It is a figure which shows the first surface etching process. [Figure 14] It is a figure which shows the process of covering the first recess with resin. [Figure 15] It is a figure which shows the second surface etching process. [Figure 16] It is a figure which shows the second surface etching process following FIG. 15. [Figure 17] It is a figure which shows the process of removing the resin and the resist pattern from the metal plate. [Figure 18] It is a plan view which shows the intermediate product obtained by processing the metal plate. [Figure 19] This figure shows a magnified view of the area enclosed by the dotted line labeled XIX among the intermediate products in Figure 18. [Figure 20] This diagram shows the process of separating the vapor deposition mask portion from the support portion. [Figure 21] This is a magnified plan view showing a vapor deposition mask obtained from an intermediate product. [Figure 22] Figure 21 is a side view showing the short side of the deposition mask as seen from the direction of arrow XXII. [Figure 23A] This figure shows the results of observing the region enclosed by the dotted line labeled XXIII in the deposition mask of Figure 21 from the first surface side. [Figure 23B] This figure shows the results of observing the region enclosed by the dotted line labeled XXIII in the deposition mask of Figure 21 from the second side. [Figure 24A] This figure shows the results of observing the region enclosed by the dotted line labeled XXIV in the deposition mask of Figure 21 from the first surface side. [Figure 24B] This figure shows the results of observing the region enclosed by the dotted line labeled XXIV in the deposition mask of Figure 21 from the second side. [Figure 25A] This is a schematic cross-sectional view of the deposition mask in Figure 21, showing the region enclosed by the dotted line labeled XXIII. [Figure 25B] This figure shows one modified example of the cross-sectional shape of the long side of a vapor deposition mask. [Figure 25C] This figure shows a deposition mask with a long side having the cross-sectional shape shown in Figure 25A, facing an organic EL substrate. [Figure 25D] This figure shows a deposition mask with a long side having the cross-sectional shape shown in Figure 25B, facing an organic EL substrate. [Figure 26] This is a schematic cross-sectional view of the deposition mask in Figure 21, showing the region enclosed by the dotted line labeled XXIV. [Figure 27] This is a plan view showing one modified example of an intermediate product. [Modes for carrying out the invention]

[0016] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. Note that, for the sake of illustration and ease of understanding, the scale and aspect ratios of the drawings attached to this specification have been appropriately altered and exaggerated from those of the actual objects.

[0017] Figures 1 to 22 are diagrams illustrating one embodiment of the present invention. The following embodiments and their modifications will be explained using as an example a method for manufacturing a vapor deposition mask used to pattern organic material onto a substrate in a desired pattern when manufacturing an organic EL display device. However, the present invention is not limited to such applications and can be applied to vapor deposition masks used in various applications.

[0018] In this specification, the terms "board," "sheet," and "film" are not distinguished from each other solely based on differences in name. For example, "board" is a concept that includes components that could also be called sheets or films.

[0019] Furthermore, "plate surface (sheet surface, film surface)" refers to the surface that coincides with the planar direction of the plate-shaped (sheet-shaped, film-shaped) member in question when viewed as a whole and from a broad perspective. Also, the normal direction used for a plate-shaped (sheet-shaped, film-shaped) member refers to the direction normal to the plate surface (sheet surface, film surface) of that member.

[0020] Furthermore, terms used herein to specify shapes, geometric conditions, and physical properties, as well as their degrees, such as "parallel," "orthogonal," "identical," and "equivalent," as well as values ​​for lengths, angles, and physical properties, shall not be strictly interpreted, but shall be interpreted to include a range that allows for the expectation of similar functionality.

[0021] (vapor deposition equipment) First, the deposition apparatus 90, which performs the deposition process of depositing a deposition material onto an object, will be described with reference to Figure 1. As shown in Figure 1, the deposition apparatus 90 includes a deposition source (e.g., a crucible 94), a heater 96, and a deposition mask device 10 inside. The deposition apparatus 90 also includes an exhaust means for creating a vacuum atmosphere inside the deposition apparatus 90. The crucible 94 contains the deposition material 98, such as an organic light-emitting material. The heater 96 heats the crucible 94 to evaporate the deposition material 98 under a vacuum atmosphere. The deposition mask device 10 is positioned opposite the crucible 94.

[0022] (Vapor deposition mask device) The vapor deposition mask apparatus 10 will now be described. As shown in Figure 1, the vapor deposition mask apparatus 10 comprises a vapor deposition mask 20 and a frame 15 that supports the vapor deposition mask 20. The frame 15 supports the vapor deposition mask 20 while pulling it in the direction of its surface so that the vapor deposition mask 20 does not bend. As shown in Figure 1, the vapor deposition mask apparatus 10 is placed inside the vapor deposition apparatus 90 so that the vapor deposition mask 20 faces the substrate, for example, an organic EL substrate 92, which is the object to which the vapor deposition material 98 is to be deposited. In the following description, of the surfaces of the vapor deposition mask 20, the surface facing the organic EL substrate 92 will be referred to as the first surface 20a, and the surface located on the opposite side of the first surface 20a will be referred to as the second surface 20b.

[0023] As shown in Figure 1, the deposition mask apparatus 10 may include a magnet 93 positioned on the side of the organic EL substrate 92 opposite to the deposition mask 20. By providing the magnet 93, the deposition mask 20 can be attracted to the magnet 93 by magnetic force, allowing the deposition mask 20 to be brought into close contact with the organic EL substrate 92.

[0024] Figure 3 is a plan view showing the deposition mask apparatus 10 as seen from the first surface 20a side of the deposition mask 20. As shown in Figure 3, the deposition mask apparatus 10 comprises a plurality of deposition masks 20. Each deposition mask 20 includes a pair of long sides 26 and a pair of short sides 27, and has a rectangular shape, for example. Each deposition mask 20 is fixed to the frame 15 by, for example, spot welding at the pair of short sides 27 or the vicinity thereof.

[0025] The deposition mask 20 includes a metal plate-shaped substrate with a plurality of through-holes 25 formed therein. The deposition material 98 that evaporates from the crucible 94 and reaches the deposition mask apparatus 10 adheres to the organic EL substrate 92 through the through-holes 25 of the deposition mask 20. This allows the deposition material 98 to be deposited on the surface of the organic EL substrate 92 in a desired pattern corresponding to the positions of the through-holes 25 of the deposition mask 20.

[0026] Figure 2 is a cross-sectional view showing an organic EL display device 100 manufactured using the deposition apparatus 90 of Figure 1. The organic EL display device 100 comprises an organic EL substrate 92 and pixels containing deposition material 98 arranged in a pattern.

[0027] Furthermore, if it is desired to display multiple colors, separate deposition apparatuses 90 equipped with deposition masks 20 corresponding to each color are prepared, and the organic EL substrate 92 is sequentially fed into each deposition apparatus 90. This allows, for example, the deposition of red organic light-emitting material, green organic light-emitting material, and blue organic light-emitting material onto the organic EL substrate 92 in sequence.

[0028] Incidentally, the vapor deposition process may be carried out inside a vapor deposition apparatus 90, which is in a high-temperature atmosphere. In this case, the vapor deposition mask 20, frame 15, and organic EL substrate 92, which are held inside the vapor deposition apparatus 90, are also heated during the vapor deposition process. At this time, the vapor deposition mask 20, frame 15, and organic EL substrate 92 will exhibit dimensional changes based on their respective coefficients of thermal expansion. In this case, if the thermal expansion coefficients of the deposition mask 20, frame 15, and organic EL substrate 92 are significantly different, positional misalignment will occur due to the difference in their dimensional changes. As a result, the dimensional and positional accuracy of the deposition material attached to the organic EL substrate 92 will decrease.

[0029] To solve these problems, it is preferable that the thermal expansion coefficients of the deposition mask 20 and frame 15 are equivalent to those of the organic EL substrate 92. For example, when a glass substrate is used as the organic EL substrate 92, an iron alloy containing nickel can be used as the main material for the deposition mask 20 and frame 15. For example, an iron alloy containing 30% by mass or more and 54% by mass or less of nickel can be used as the base material for the deposition mask 20. Specific examples of iron alloys containing nickel include Invar material containing 34% by mass or more and 38% by mass or less of nickel, Super Invar material containing 30% by mass or more and 34% by mass or less of nickel plus cobalt, and low thermal expansion Fe-Ni plated alloy containing 38% by mass or more and 54% by mass or less of nickel.

[0030] If the temperatures of the deposition mask 20, frame 15, and organic EL substrate 92 do not reach high temperatures during the deposition process, it is not necessary to make the thermal expansion coefficients of the deposition mask 20 and frame 15 the same as those of the organic EL substrate 92. In this case, materials other than the iron alloys mentioned above may be used as the material constituting the deposition mask 20. For example, iron alloys other than the nickel-containing iron alloys mentioned above, such as chromium-containing iron alloys, may be used. As an example of a chromium-containing iron alloy, an iron alloy commonly referred to as stainless steel can be used. In addition, alloys other than iron alloys, such as nickel or nickel-cobalt alloys, may be used.

[0031] (Vapor deposition mask) Next, the deposition mask 20 will be described in detail. As shown in Figure 3, the deposition mask 20 comprises a pair of ear portions (first ear portion 17a and second ear portion 17b) including a pair of short sides 27 of the deposition mask 20, and an intermediate portion 18 located between the pair of ear portions 17a and 17b.

[0032] (ear) First, the ear portions 17a and 17b will be described in detail. The ear portions 17a and 17b are parts of the deposition mask 20 that are fixed to the frame 15. In this embodiment, the ear portions 17a and 17b are integrally formed with the intermediate portion 18. Note that the ear portions 17a and 17b may be made of a different material from the intermediate portion 18. In this case, the ear portions 17a and 17b are joined to the intermediate portion 18, for example, by welding.

[0033] (Middle section) Next, the intermediate portion 18 will be described. The intermediate portion 18 includes at least one effective region 22 in which a through hole 25 extending from the first surface 20a to the second surface 20b is formed, and a surrounding region 23 surrounding the effective region 22. The effective region 22 is the region of the deposition mask 20 that faces the display area of ​​the organic EL substrate 92.

[0034] In the example shown in Figure 3, the intermediate section 18 includes a plurality of effective regions 22 arranged at predetermined intervals along the long side 26 of the deposition mask 20. Each effective region 22 corresponds to the display area of ​​one organic EL display device 100. Therefore, the deposition mask apparatus 10 shown in Figure 1 enables multi-face deposition of organic EL display devices 100.

[0035] As shown in Figure 3, the effective region 22 has, for example, a roughly rectangular shape in plan view, or more precisely, a roughly rectangular contour in plan view. Although not shown in the figure, each effective region 22 can have contours of various shapes depending on the shape of the display area of ​​the organic EL substrate 92. For example, each effective region 22 may have a circular contour.

[0036] The effective region 22 will now be described in detail. Figure 4 is a plan view showing the effective region 22 enlarged from the second surface 20b side of the deposition mask 20. As shown in Figure 4, in the illustrated example, the multiple through holes 25 formed in each effective region 22 are arranged at a predetermined pitch along two mutually orthogonal directions within the effective region 22. An example of the through holes 25 will be described in further detail, mainly with reference to Figures 5 to 7. Figures 5 to 7 are cross-sectional views of the effective region 22 in Figure 4 along the VV direction to the VII-VII direction, respectively.

[0037] As shown in Figures 5 to 7, the multiple through-holes 25 penetrate from a first surface 20a, which is one side of the deposition mask 20 along the normal direction N, to a second surface 20b, which is the other side of the deposition mask 20 along the normal direction N. In the illustrated example, as will be described in detail later, a first recess 30 is formed by etching on the first surface 21a of the substrate 21, which is one side of the deposition mask 20 along the normal direction N, and a second recess 35 is formed on the second surface 21b of the substrate 21, which is the other side of the deposition mask 20 along the normal direction N. The first recess 30 is connected to the second recess 35, thereby creating a connection between the second recess 35 and the first recess 30. The through-hole 25 is composed of the second recess 35 and the first recess 30 connected to the second recess 35.

[0038] As shown in Figures 5 to 7, the opening area of ​​each second recess 35 in the cross-section along the plate surface of the deposition mask 20 at each position along the normal direction N of the deposition mask 20 gradually decreases from the second surface 20b side toward the first surface 20a side of the deposition mask 20. Similarly, the opening area of ​​each first recess 30 in the cross-section along the plate surface of the deposition mask 20 at each position along the normal direction N of the deposition mask 20 gradually decreases from the first surface 20a side toward the second surface 20b side of the deposition mask 20.

[0039] As shown in Figures 5 to 7, the wall surface 31 of the first recess 30 and the wall surface 36 of the second recess 35 are connected via a circumferential connecting portion 41. The connecting portion 41 is defined by the ridge of the protruding portion where the wall surface 31 of the first recess 30, which is inclined with respect to the normal direction N of the deposition mask 20, and the wall surface 36 of the second recess 35, which is also inclined with respect to the normal direction N of the deposition mask 20, meet. The connecting portion 41 defines a through-hole 42 that minimizes the opening area of ​​the through-hole 25 in a plan view of the deposition mask 20.

[0040] As shown in Figures 5 to 7, on the other side of the deposition mask 20 along the normal direction N, that is, on the first surface 20a of the deposition mask 20, two adjacent through holes 25 are spaced apart from each other along the plate surface of the deposition mask 20. In other words, when the first recess 30 is produced by etching the substrate 21 from the side of the first surface 21a of the substrate 21 that corresponds to the first surface 20a of the deposition mask 20, as in the manufacturing method described later, the first surface 21a of the substrate 21 remains between two adjacent first recesses 30.

[0041] Similarly, as shown in Figures 5 and 7, on one side of the deposition mask 20 along the normal direction N, that is, on the side of the second surface 20b of the deposition mask 20, two adjacent second recesses 35 may be spaced apart from each other along the plate surface of the deposition mask 20. In other words, the second surface 21b of the substrate 21 may remain between two adjacent second recesses 35. In the following description, the portion of the effective area 22 of the second surface 21b of the substrate 21 that remains unetched will also be referred to as the top portion 43. By manufacturing the deposition mask 20 so that such a top portion 43 remains, the deposition mask 20 can be given sufficient strength. This makes it possible to suppress damage to the deposition mask 20, for example, during transport. However, if the width β of the top portion 43 is too large, shadows may occur in the deposition process, which may reduce the utilization efficiency of the deposition material 98. Therefore, it is preferable that the deposition mask 20 is manufactured so that the width β of the top portion 43 is not excessively large. For example, it is preferable that the width β of the top portion 43 is 2 μm or less. The width β of the top portion 43 generally changes depending on the direction in which the deposition mask 20 is cut. For example, the width β of the top portion 43 shown in Figures 5 and 7 may be different from each other. In this case, the deposition mask 20 may be configured such that the width β of the top portion 43 is 2 μm or less regardless of the direction in which the deposition mask 20 is cut.

[0042] As shown in Figure 6, etching may be performed so that two adjacent second recesses 35 are connected in some locations. That is, there may be areas between two adjacent second recesses 35 where the second surface 21b of the substrate 21 does not remain. Also, although not shown, etching may be performed so that two adjacent second recesses 35 are connected across the entire area of ​​the second surface 21b.

[0043] When the deposition mask apparatus 10 is housed in the deposition apparatus 90 as shown in Figure 1, the first surface 20a of the deposition mask 20 faces the organic EL substrate 92, and the second surface 20b of the deposition mask 20 is located on the side of the crucible 94 holding the deposition material 98, as shown by the dashed line in Figure 5. Therefore, the deposition material 98 adheres to the organic EL substrate 92 by passing through the second recess 35, which has a progressively smaller opening area. As shown by the arrows in Figure 5 pointing from the second surface 20b to the first surface 20a, the deposition material 98 moves not only along the direction N normal to the organic EL substrate 92 from the crucible 94 towards the organic EL substrate 92, but also in a direction that is significantly inclined with respect to the direction N normal to the organic EL substrate 92. In this case, if the thickness of the deposition mask 20 is large, much of the diagonally moving deposition material 98 reaches the wall surface 36 of the second recess 35 and adheres to it before it reaches the organic EL substrate 92 through the through hole 25. Therefore, in order to improve the utilization efficiency of the vapor deposition material 98, it is considered preferable to reduce the thickness t of the vapor deposition mask 20, thereby reducing the height of the wall surface 36 of the second recess 35 and the wall surface 31 of the first recess 30. In other words, it is preferable to use a substrate 21 with the smallest possible thickness t within the range that can ensure the strength of the vapor deposition mask 20 as the substrate 21 for constituting the vapor deposition mask 20. Considering this point, in this embodiment, the thickness t of the vapor deposition mask 20 is preferably set to 50 μm or less, for example, 5 μm or more and 50 μm or less. Note that the thickness t is the thickness of the surrounding region 23, that is, the thickness of the portion of the vapor deposition mask 20 in which the first recess 30 and the second recess 35 are not formed. Therefore, it can also be said that the thickness t is the thickness of the substrate 21.

[0044] In Figure 5, the minimum angle that a straight line L1 passing through the connection portion 41, which is the part of the through-hole 25 with the smallest opening area, and any other arbitrary position on the wall surface 36 of the second recess 35, makes with respect to the normal direction N of the deposition mask 20 is represented by the symbol θ1. In order to allow the diagonally moving deposition material 98 to reach the organic EL substrate 92 as far as possible without reaching the wall surface 36, it is advantageous to increase the angle θ1. In addition to reducing the thickness t of the deposition mask 20, it is also effective to reduce the width β of the top portion 43 as described above in order to increase the angle θ1.

[0045] In Figure 7, the symbol α represents the width of the portion of the effective area 22 of the first surface 21a of the substrate 21 that remains unetched (hereinafter also referred to as the rib portion). The width α of the rib portion and the dimension r2 of the through portion 42 are appropriately determined according to the dimensions and number of display pixels of the organic EL display device. For example, the width α of the rib portion is 5 μm or more and 40 μm or less, and the dimension r2 of the through portion 42 is 10 μm or more and 60 μm or less.

[0046] While not limited to this, the deposition mask 20 according to this embodiment is particularly effective when manufacturing organic EL display devices with a pixel density of 450 ppi or higher. An example of the dimensions of the deposition mask 20 required to manufacture such a high-pixel-density organic EL display device will be described below with reference to Figure 8. Figure 8 is an enlarged cross-sectional view showing the through-hole 25 and its vicinity in the deposition mask 20 shown in Figure 5.

[0047] In Figure 8, the symbol r1 represents the distance from the first surface 20a of the deposition mask 20 to the connecting portion 41, in the direction along the normal direction N of the deposition mask 20, that is, the height of the wall surface 31 of the first recess 30, as a parameter related to the shape of the through hole 25. Furthermore, the symbol r2 represents the dimension of the first recess 30 at the part where the first recess 30 connects to the second recess 35, that is, the dimension of the through portion 42. Also in Figure 8, the symbol θ2 represents the angle that the straight line L2 connecting the connecting portion 41 and the leading edge of the first recess 30 on the first surface 21a of the substrate 21 makes with respect to the normal direction N of the substrate 21.

[0048] When manufacturing an organic EL display device with a pixel density of 450 ppi or higher, the dimension r2 of the through-hole 42 is preferably set to 10 μm or more and 60 μm or less. This provides a deposition mask 20 that can manufacture an organic EL display device with a high pixel density. Preferably, the height r1 of the wall surface 31 of the first recess 30 is set to 6 μm or less.

[0049] Next, the angle θ2 shown in Figure 8 will be explained. The angle θ2 corresponds to the maximum inclination angle of the deposition material 98 that can reach the organic EL substrate 92, among the deposition material 98 that flies inclined with respect to the normal direction N of the substrate 21 and passes through the through-hole 42 near the connection 41. This is because the deposition material 98 that flies in through the connection 41 at an inclination angle greater than angle θ2 adheres to the wall surface 31 of the first recess 30 before reaching the organic EL substrate 92. Therefore, by reducing the angle θ2, it is possible to suppress the deposition material 98 that flies in at a large inclination angle and passes through the through-hole 42 from adhering to the organic EL substrate 92, thereby suppressing the deposition material 98 from adhering to the part of the organic EL substrate 92 outside the part that overlaps with the through-hole 42. In other words, reducing the angle θ2 leads to suppression of variations in the area and thickness of the deposition material 98 adhering to the organic EL substrate 92. From this viewpoint, for example, the through-hole 25 is formed such that the angle θ2 is 45 degrees or less. In Figure 8, an example is shown where the dimension of the first recess 30 on the first surface 21a, that is, the opening dimension of the through hole 25 on the first surface 21a, is larger than the dimension r2 of the first recess 30 on the connecting portion 41. In other words, an example is shown where the value of angle θ2 is positive. However, although not shown, the dimension r2 of the first recess 30 on the connecting portion 41 may also be larger than the dimension of the first recess 30 on the first surface 21a. In other words, the value of angle θ2 may be negative.

[0050] Method for manufacturing vapor deposition masks Next, we will describe the method for manufacturing the vapor deposition mask 20.

[0051] (Preparation of metal plates) First, a metal sheet 64 for manufacturing the deposition mask is prepared. The metal sheet 64 is prepared, for example, in the form of a roll obtained by winding up a long metal sheet. As the metal sheet 64, for example, a metal sheet made of an iron alloy containing nickel is used. The thickness of the metal sheet 64 is, for example, 3 μm, but may be 5 μm or more, or 10 μm or more. Alternatively, the thickness of the metal sheet 64 may be, for example, 50 μm or less, but may be 30 μm or less, or 20 μm or less. Methods for producing a metal sheet 64 with a desired thickness include rolling and plating.

[0052] Next, a method for manufacturing a vapor deposition mask 20 using a metal plate 64 will be described, mainly with reference to Figures 9 to 22. In the method for manufacturing a vapor deposition mask 20 described below, as shown in Figure 9, a metal plate 64 is processed to form multiple vapor deposition mask portions including through holes 25 on the metal plate 64 (processing step), and then the vapor deposition mask portions are separated from the metal plate 64 (separation step) to obtain a single-wafer vapor deposition mask 20.

[0053] (Processing process) The process for processing the metal plate 64 includes the steps of: applying photolithography etching to the long metal plate 64 to form a first recess 30 on the metal plate 64 from the first surface 64a side; and applying photolithography etching to the metal plate 64 to form a second recess 35 on the metal plate 64 from the second surface 64b side. The first recess 30 and the second recess 35 formed in the metal plate 64 communicate with each other, thereby creating a through hole 25 in the metal plate 64. In the example described below, the process of forming the first recess 30 is performed before the process of forming the second recess 35, and a process of sealing the created first recess 30 is performed between the process of forming the first recess 30 and the process of forming the second recess 35. The details of each process are described below.

[0054] Figure 9 shows a manufacturing apparatus 60 for producing a vapor deposition mask 20. As shown in Figure 9, first, a winding 62 is prepared by winding a metal plate 64 onto a core 61. Then, by rotating the core 61 and unwinding the winding 62, a strip-shaped metal plate 64 is supplied as shown in Figure 9.

[0055] The supplied metal plate 64 is transported to the processing device (etching means) 70 by the transport roller 72. The processing device 70 performs the processes shown in Figures 10 to 17. In this embodiment, multiple deposition masks 20 are arranged in the width direction of the metal plate 64. In other words, the metal plate 64 is processed so that multiple deposition mask portions, which will be separated from the metal plate 64 and become deposition masks 20 (as described later), are arranged in the width direction of the metal plate 64. In this case, preferably, multiple deposition masks 20 are arranged on the metal plate 64 so that the direction of the long side 26 of the deposition mask portion, i.e., the deposition mask 20, coincides with the longitudinal direction of the elongated metal plate 64.

[0056] First, as shown in Figure 10, resist films 65c and 65d containing a negative-type photosensitive resist material are formed on the first surface 64a and the second surface 64b of the metal plate 64. For example, a coating solution containing a negative-type photosensitive resist material is applied to the first surface 64a and the second surface 64b of the metal plate 64, and then the coating solution is dried to form the resist films 65c and 65d.

[0057] Next, exposure masks 68a and 68b are prepared so that light does not pass through the areas of the resist films 65c and 65d that are to be removed, and the exposure masks 68a and 68b are placed on the resist films 65c and 65d, respectively, as shown in Figure 11. For example, glass plates that do not transmit light to the areas of the resist films 65c and 65d that are to be removed are used as exposure masks 68a and 68b. After that, the exposure masks 68a and 68b are firmly attached to the resist films 65c and 65d by vacuum adhesion. Positive-type photosensitive resist material may also be used. In this case, an exposure mask is used that allows light to pass through the area of ​​the resist film that is to be removed.

[0058] Subsequently, the resist films 65c and 65d are exposed through exposure masks 68a and 68b (exposure step). Furthermore, the exposed resist films 65c and 65d are developed to form an image on them (development step). In this way, as shown in Figure 12, a first resist pattern 65a can be formed on the first surface 64a of the metal plate 64, and a second resist pattern 65b can be formed on the second surface 64b of the metal plate 64. The development step may include a resist heat treatment step to increase the hardness of the resist films 65c and 65d, or to make the resist films 65c and 65d adhere more firmly to the metal plate 64. The resist heat treatment step can be carried out, for example, at room temperature or above and 400°C or below.

[0059] Next, as shown in Figure 13, a first surface etching step is performed in which the area of ​​the first surface 64a of the metal plate 64 that is not covered by the first resist pattern 65a is etched using a first etching solution. For example, the first etching solution is sprayed from a nozzle positioned on the side facing the first surface 64a of the conveyed metal plate 64, over the first resist pattern 65a, toward the first surface 64a of the metal plate 64. As a result, as shown in Figure 13, erosion by the first etching solution progresses in the area of ​​the metal plate 64 that is not covered by the first resist pattern 65a. This forms a number of first recesses 30 on the first surface 64a of the metal plate 64. As the first etching solution, for example, one containing ferric chloride solution and hydrochloric acid is used.

[0060] Subsequently, as shown in Figure 14, the first recess 30 is covered with a resin 69 that is resistant to the second etching solution used in the later second surface etching process. In other words, the first recess 30 is sealed with a resin 69 that is resistant to the second etching solution. In the example shown in Figure 14, the resin 69 film is formed to cover not only the formed first recess 30 but also the first surface 64a (first resist pattern 65a).

[0061] Next, as shown in Figure 15, a second surface etching process is performed to etch the area of ​​the second surface 64b of the metal plate 64 that is not covered by the second resist pattern 65b, thereby forming a second recess 35 on the second surface 64b. The second surface etching process is carried out until the first recess 30 and the second recess 35 are connected to each other, thereby forming a through hole 25. As the second etching solution, a solution containing, for example, ferric chloride solution and hydrochloric acid is used, similar to the first etching solution described above.

[0062] The erosion by the second etching solution occurs only in the portion of the metal plate 64 that is in contact with the second etching solution. Therefore, the erosion does not proceed only in the direction normal to the metal plate 64 (thickness direction), but also in the direction along the surface of the metal plate 64. Preferably, the second surface etching process is completed before the two second recesses 35, which are formed facing the two adjacent holes 66a of the second resist pattern 65b, merge on the back side of the bridge portion 67a located between the two holes 66a. This allows the aforementioned top portion 43 to be left on the second surface 64b of the metal plate 64, as shown in Figure 16.

[0063] Subsequently, as shown in Figure 17, the resin 69 is removed from the metal plate 64. The resin 69 can be removed, for example, by using an alkaline stripping solution. When an alkaline stripping solution is used, the resist patterns 65a and 65b are removed simultaneously with the resin 69, as shown in Figure 17. After removing the resin 69, the resist patterns 65a and 65b may be removed separately from the resin 69 using a different stripping solution than the one used to remove the resin 69.

[0064] Figure 18 is a plan view showing an intermediate product 50 obtained by processing the deposition mask 20 as described above to form through holes 25. The deposition mask 20 is assigned to the intermediate product 50. In other words, the intermediate product 50 comprises a plurality of deposition mask portions 51 and support portions 56. In Figure 18, the symbol T1 represents the transport direction of the metal plate 64 in the manufacturing process of the deposition mask 20, and the symbol T2 represents the direction perpendicular to the transport direction T1 (hereinafter also referred to as the width direction). The transport direction T1 coincides with the longitudinal direction of the elongated metal plate 64.

[0065] The deposition mask portion 51 is the part of the metal plate 64 that, when separated, becomes the deposition mask 20. The deposition mask portion 51 includes a pair of long sides 52 and a pair of short sides 53 that correspond to a pair of long sides 26 and a pair of short sides 27 of the deposition mask 20. In addition, a plurality of through holes 25 are formed in the deposition mask portion 51. For example, the deposition mask portion 51 includes an effective region 22 in which the plurality of through holes 25 are formed, and a surrounding region 23 that surrounds the effective region 22.

[0066] As shown in Figure 18, the multiple deposition mask portions 51 are arranged in a direction that intersects the long side 52. For example, the long side 52 is parallel to the transport direction T1, and the direction in which the multiple deposition mask portions 51 are arranged is parallel to the width direction T2.

[0067] The support portion 56 is the part that surrounds the multiple deposition mask portions 51 in a plan view and is partially connected to the deposition mask portions 51. In the example shown in Figure 18, the support portion 56 is the part of the metal plate 64 other than the deposition mask portions 51.

[0068] The connection point 54 between the deposition mask portion 51 and the support portion 56 will be described below. Figure 19 is a magnified view of the area enclosed by the dotted line labeled XIX in the intermediate product 50 of Figure 18. In the examples shown in Figures 18 and 19, the short side 53 of the deposition mask portion 51 is partially connected to the support portion 56. For example, as shown in Figure 19, the short side 53 of the deposition mask portion 51 includes a plurality of protrusions 53a that project toward and are connected to the support portion 56. On the other hand, the long side 52 of the deposition mask portion 51 is not connected to the support portion 56. In other words, there is a gap 55 between the long side 52 of the deposition mask portion 51 and the support portion 56, spanning the entire length of the long side 52. Furthermore, there is no support portion 56 between the long sides 52 of two adjacent deposition mask portions 51. In other words, there is a gap 55 between the long sides 52 of two adjacent deposition mask portions 51, spanning the entire length of the long side 52.

[0069] The gap 55 can be formed simultaneously with the through hole 25 in the processing steps described above. For example, in the processing steps described above, the resist films 65c and 65d are exposed and developed such that the resist patterns 65a and 65b do not remain on the portion of the metal plate 64 where the gap 55 is to be formed. Next, the areas of the metal plate 64 that are not covered by the resist patterns 65a and 65b are removed by etching. This allows for the formation of multiple through holes 25 and the gaps 55 shown in Figures 18 and 19 in the metal plate 64 simultaneously.

[0070] The etching to form the gap 55 may be performed on both sides of the first surface 64a and the second surface 64b of the metal plate 64 (Example 1), or on only one side of either the first surface 64a or the second surface 64b of the metal plate 64 (Example 2).

[0071] In Example 1, the resist film 65c is exposed and developed so that no resist pattern 65a remains in the area of ​​the first surface 64a of the metal plate 64 where the gap 55 is to be formed (hereinafter also referred to as the planned gap area). Similarly, the resist film 65d is exposed and developed so that no resist pattern 65b remains in the planned gap area of ​​the second surface 64b of the metal plate 64. Next, the metal plate 64 is etched from the first surface 64a side. This forms the first recess 30 in the area of ​​the first surface 64a of the metal plate 64 that will become the effective area 22 of the deposition mask 20, and simultaneously forms the first recess 30 in the planned gap area of ​​the first surface 64a. Next, the first recess 30 is covered with resin 69. After that, the metal plate 64 is etched from the second surface 64b side. This creates a second recess 35 in the portion of the second surface 64b of the metal plate 64 that will become the effective area 22 of the deposition mask 20, and simultaneously creates a second recess 35 in the planned gap area of ​​the second surface 64b. This makes it possible to create a gap 55 at the same time as the through hole 25.

[0072] In Example 2, for example, the resist film 65d is exposed and developed so that the resist pattern 65b does not remain in the planned gap area of ​​the second surface 64b of the metal plate 64. On the other hand, the resist film 65c is exposed and developed so that the resist pattern 65a remains in the planned gap area of ​​the first surface 64a of the metal plate 64. Next, the metal plate 64 is etched from the first surface 64a side to form the first recess 30 in the portion of the metal plate 64 that will become the effective area 22 of the deposition mask 20. At this time, the first recess 30 is not formed in the planned gap area of ​​the first surface 64a. Next, the first recess 30 is covered with resin 69. At this time, the planned gap area of ​​the first surface 64a is also covered with resin 69. After that, the metal plate 64 is etched from the second surface 64b side. This creates a second recess 35 in the portion of the second surface 64b of the metal plate 64 that will become the effective area 22 of the deposition mask 20, and simultaneously creates a second recess 35 in the planned gap area of ​​the second surface 64b. At this time, by performing etching so that the second recess 35 reaches the first surface 64a side, a gap 55 can be formed in the planned gap area. In Example 2, during the first etching step to form the first recess 30, half-etching is not performed on the planned gap area of ​​the first surface 64a of the metal plate 64. Therefore, even if the thickness of the metal plate 64 is small, it is possible to suppress the occurrence of folds in the planned gap area of ​​the metal plate 64 after the first etching step.

[0073] The dimensions of the gap 55 are set so that the vapor deposition mask portion 51 does not come into contact with the support portion 56 or other vapor deposition mask portions 51 during transport of the intermediate product 50. The dimension S1 in the width direction T2 of the gap 55 between the vapor deposition mask portion 51 and the support portion 56 is, for example, 0.1 mm or more and 5 mm or less. The dimension S2 in the width direction T2 of the gap 55 between two adjacent vapor deposition mask portions 51 is, for example, 0.1 mm or more and 5 mm or less. The dimension S3 in the transport direction T1 between the short side 53 of the vapor deposition mask portion 51 and the support portion 56 is, for example, 30 μm or more and 100 μm or less. The pitch P of the protrusions 53a in the direction of the short side 53 is, for example, 200 μm or more and 400 μm or less.

[0074] (separation process) Next, a separation process is carried out to separate the vapor deposition mask portion 51 from the support portion 56 in the intermediate product 50 described above. First, as shown in Figure 9, the intermediate product 50 obtained by processing the metal plate 64 is transported to a separation device 73 for carrying out the separation process. For example, the intermediate product 50 is transported to the separation device 73 by transport rollers 72, 72 that rotate while holding the intermediate product 50. However, as described above, if the long side 52 of the vapor deposition mask portion 51 in the intermediate product 50 is not connected to the support portion 56, the vapor deposition mask portion 51 is likely to shake or bend during transport. Taking this into consideration, a suppression means to suppress shaking and bending of the vapor deposition mask portion 51 may be provided in the intermediate product 50, the transport rollers 72, or the transport path. For example, the suppression means includes a pair of films provided on the first and second sides of the intermediate product 50. By transporting the intermediate product 50 to 73 while sandwiched between the pair of films, shaking and bending of the vapor deposition mask portion 51 can be suppressed.

[0075] Figure 20 shows the separation process for separating the deposition mask portion 51 from the support portion 56. As described above, the long side 52 of the deposition mask portion 51 and the support portion 56 are not connected. Therefore, by breaking the connection point 54 between the deposition mask portion 51 and the support portion 56 on the short side 53, the deposition mask portion 51 can be separated from the support portion 56 to obtain the deposition mask 20. Figure 21 is an enlarged plan view showing the deposition mask 20 obtained from the intermediate product 50.

[0076] The separation process includes, for example, a fracture process that fractures the connection point 54 of the short side 53 of the deposition mask portion 51 that is connected to the support portion 56. In this case, as shown in Figure 21, the fracture surface 27b is the fractured portion of the deposition mask 20 where the connection point 54 was fractured, for example, the tip of the protrusion 53a of the short side 53. Thus, a fracture surface 27b is partially present on the short side 27 of the deposition mask 20. Figure 22 is a side view showing the fracture surface 27b of the protrusion 27a of the short side 27 of the deposition mask 20 as seen from the direction of arrow XXII in Figure 21.

[0077] In the fracture process, the vapor deposition mask portion 51 is pulled upward, for example, in the direction shown in Figure 22, relative to the support portion 56, thereby fracturing the connection point 54 between the short side 53 of the vapor deposition mask portion 51 and the support portion 56. In this case, as shown in Figure 22, a burr 27c may be generated on the fracture surface 27b of the protrusion 27a, due to the force received from the support portion 56 at the time of fracture. The burr 27c extends in the direction of the force received from the support portion 56 at the time of fracture (downward in Figure 22). The fracture surface 27b can be defined as the surface on which such a burr 27c exists. On the other hand, since the long side 52 of the vapor deposition mask portion 51 is not connected to the support portion 56, there is no fracture surface on the long side 26 of the vapor deposition mask 20.

[0078] Figures 23A and 23B show the results of observing the region of the long side 26 enclosed by the dotted line labeled XXIII in the deposition mask 20 of Figure 22 from the first surface 20a side and the second surface 20b side, respectively. Figures 24A and 24B show the results of observing the region of the short side 27 enclosed by the dotted line labeled XXIV in the deposition mask 20 of Figure 22 from the first surface 20a side and the second surface 20b side, respectively. In all of Figures 23A, 23B, 24A, and 24B, the magnification during observation was 10x.

[0079] As shown in Figure 24A, a dark area (hereinafter also referred to as the dark area) 27x was observed at the tip of the protrusion 27a on the short side 27. The width of the dark area 27x was 13.8 μm. As shown in Figure 24B, a similar dark area 27y was observed when viewed from the second surface 20b side of the deposition mask 20.

[0080] On the other hand, in the region along the longer side 26, no dark areas were observed, or dark areas with a smaller thickness than those along the shorter side 27 were observed. For example, as shown in Figure 23B, a dark area 26y with a width of 5.1 μm was observed when viewed from the second surface 20b side.

[0081] Figure 25A schematically shows the cross-sectional shape of the long side 26 of the deposition mask 20 in Figure 22, which is the area enclosed by the dotted line labeled XXIII. Figure 25B shows a modified example of the cross-sectional shape of the long side 26. As shown in Figures 25A and 25B, the long side 26 of the deposition mask 20 may have a curved surface that is convex inward due to side etching that occurs during the etching process performed to form the through-hole 25. Figure 25A shows an example of the cross-sectional shape of the long side 26 when the gap 55 is formed by etching only from the second surface 64b of the metal plate 64. Figure 25B shows an example of the cross-sectional shape of the long side 26 when the gap 55 is formed by etching from both sides of the first surface 64a and the second surface 64b of the metal plate 64. The cross-sectional shape corresponding to the plan photographs shown in Figures 23A and 23B is shown in Figure 25A.

[0082] When a gap 55 is formed by etching only from the second surface 64b of the metal plate 64, a curved surface is formed on the long side 26, as shown in Figure 25A, which widens outward as it moves from the second surface 20b side toward the first surface 20a side. This curved surface is visible when the long side 26 is observed from the second surface 20b side, but not when the long side 26 is observed from the first surface 20a side. In other words, the long side 26 has a cross-sectional shape that protrudes most outward at the point where it intersects with the first surface 20a. The dark area 26y observed when the long side 26 is observed from the second surface 20b side is thought to be due to light scattering on the curved surface.

[0083] When a gap 55 is formed by etching from both sides of the first surface 64a and the second surface 64b of the metal plate 64, as shown in Figure 25B, the long side 26 is formed with a curved surface on the first surface 20a side, which is caused by side etching when forming the first recess 30, and a curved surface on the second surface 20b side, which is caused by side etching when forming the second recess 35. In this case, the longer side 26 has a cross-sectional shape that protrudes most outward at the point where the curved surface on the first surface 20a side and the curved surface on the second surface 20b side intersect. Since the dimensions of the second recess 35 on the second surface 20b side are larger than the dimensions of the first recess 30 on the first surface 20a side (see Figures 5-7), the degree of side etching is also greater on the second surface 20b side. For this reason, the curved surface formed on the longer side 26 is also larger on the second surface 20b side. Consequently, the width of the dark area observed when the longer side 26 is viewed from the second surface 20b side is considered to be larger than the width of the dark area observed when the longer side 26 is viewed from the first surface 20a side.

[0084] Figure 25C shows a deposition mask 20 having the cross-sectional shape shown in Figure 25A and a long side 26 facing an organic EL substrate 92. Figure 25D also shows a deposition mask 20 having the cross-sectional shape shown in Figure 25B and a long side 26 facing an organic EL substrate 92. In the examples shown in Figures 25C and 25D, multiple deposition masks 20 are arranged so as to be spaced apart by a predetermined distance M in the direction of the short side 27. The distance M is set to be greater than a predetermined separation distance to prevent the long sides 26 of two adjacent deposition masks 20 from coming into contact with each other. The distance M is the distance between the parts of the long sides 26 of two adjacent deposition masks 20 that protrude the furthest outward. In the example shown in Figure 25C, the deposition masks 20 are arranged so that the distance M at the part of the long side 26 that intersects with the first surface 20a is greater than or equal to a predetermined separation distance. In the example shown in Figure 25D, the deposition masks 20 are arranged such that the distance M at the point where the curved surface on the first surface 20a side and the curved surface on the second surface 20b side of the long side 26 intersect is greater than or equal to a predetermined separation distance.

[0085] Comparing the example shown in Figure 25C with the example shown in Figure 25D, the example in Figure 25C has a larger contact area with the organic EL substrate 92. Therefore, in terms of adhesion to the organic EL substrate 92, the example in Figure 25C is more advantageous.

[0086] Furthermore, if, in the example shown in Figure 25D, the contact area of ​​the first surface 20a of the deposition mask 20 with respect to the organic EL substrate 92 were to be made equivalent to that in the example shown in Figure 25C, the distance between the long sides 26 of two adjacent deposition masks 20 would decrease, increasing the risk of the deposition masks 20 coming into contact with each other.

[0087] Thus, improving adhesion to the organic EL substrate 92 and reducing the risk of contact between two adjacent deposition masks 20 are in a trade-off relationship. In the example shown in Figure 25C, the two trade-off requirements can be met at a higher level than in the example shown in Figure 25D.

[0088] Furthermore, if the deposition masks 20 come into contact with each other, damage or deformation of the deposition masks 20 may occur. When the deposition masks 20 are deformed, the contact area of ​​the first surface 20a of the deposition mask 20 with respect to the organic EL substrate 92 decreases, and the adhesion to the organic EL substrate 92 deteriorates. Thus, excessively reducing the distance between two adjacent deposition masks 20 can lead to a decrease in adhesion to the organic EL substrate 92.

[0089] Figure 26 is a schematic cross-sectional view of the region enclosed by the dotted line labeled XXIV in the deposition mask 20 of Figure 22. As shown in Figure 26, on the short side 27 of the deposition mask 20, a curved surface with an outward convex shape may be formed on the second surface 20b side due to the short side 27 being pulled from the support portion 56 toward the first surface 20a side during the fracture process described above. The dark area 27y observed when the short side 27 is viewed from the second surface 20b side is thought to be due to light scattering on the curved surface. In addition, a burr 27c protruding from the first surface 20a may be formed on the first surface 20a side. The dark area 27x observed when the short side 27 is viewed from the first surface 20a side is thought to be due to light scattering on the burr 27c.

[0090] (Operation of this embodiment) The shortest distance S4 (see Figure 21) in the planar direction of the substrate 21 from the long side 26 of the deposition mask 20 to the through hole 25 is generally smaller than the shortest distance in the planar direction of the substrate 21 from the short side 27 to the through hole 25. Therefore, if deformation such as a wavy shape appears on the long side 26, the dimensional accuracy and positional accuracy of the deposition material 98 that adheres to the organic EL substrate 92 through the through hole 25 located near the long side 26 will decrease. In this embodiment, however, the deposition mask portion 51 of the intermediate product 50 is not connected to the support portion 56. Therefore, during the separation process to separate the deposition mask portion 51 from the support portion 56, the long side 52 does not receive force from the support portion 56, thus suppressing the appearance of deformation such as a wavy shape on the long side 26. This makes it possible to deposit the deposition material 98 onto the organic EL substrate 92 with high dimensional accuracy and positional accuracy.

[0091] It is possible to make various modifications to the embodiments described above. The following descriptions of modifications will be made with reference to the drawings as needed. In the following descriptions and the drawings used therein, parts that can be configured similarly to the embodiments described above will be given the same reference numerals as those used for the corresponding parts in the embodiments described above, and redundant explanations will be omitted. Furthermore, if it is clear that the effects and advantages obtained in the embodiments described above can also be obtained in the modifications, the explanation may be omitted.

[0092] (Modified examples of connection points and fracture surfaces) In the above-described embodiment, an example was shown in which the entire length 52 of the deposition mask portion 51 of the intermediate product 50 is not connected to the support portion 56. However, the embodiment is not limited to this, and the length 52 of the deposition mask portion 51 of the intermediate product 50 may be connected to the support portion 56 within a range that does not affect the positional accuracy of the through hole 25. For example, the length 52 may be connected to the support portion 56 in a region of the length 52 that does not overlap with the through hole 25 when viewed along the width direction T2 of the intermediate product 50. In other words, it is preferable that at least the region of the length 52 of the deposition mask portion 51 that overlaps with the through hole 25 when viewed along the width direction T2 of the intermediate product 50 is not connected to the support portion 56. In this case, there is no fracture surface in the region that overlaps with the through hole 25 when viewed along the width direction T2 of the deposition mask 20. In other words, there may be a fracture surface in the region that does not overlap with the through hole 25 when viewed along the width direction of the deposition mask 20. By not connecting the region of the long side 52 of the deposition mask portion 51 that overlaps with the through hole 25 in the width direction T2 to the support portion 56, it is possible to suppress the deformation that occurs in the deposition mask portion 51 when separating it from the support portion 56, which would otherwise affect the positional accuracy of the through hole 25.

[0093] Preferably, in the intermediate product 50, the ratio of the portion of the long side 52 of the deposition mask portion 51 that is connected to the support portion 56 is smaller than the ratio of the portion of the short side 53 of the deposition mask portion 51 that is connected to the support portion 56. This suppresses a decrease in the accuracy of the deposition process due to deformation of the long side 52 when it breaks. In this case, in the deposition mask 20 obtained by the separation process, the ratio of the fracture surface on the long side 26 is smaller than the ratio of the fracture surface on the short side 27.

[0094] The ratio of the portion of the short side 53 of the deposition mask portion 51 that is connected to the support portion 56 is calculated, for example, by dividing the sum of the widths K4 (see Figure 19) of the portions of the short side 53 that are connected to the support portion 56 by the length K2 (see Figure 18) of the short side 53. The width K4 is, for example, the width of the narrowest part of the protrusion 53a connected to the support portion 56, as shown in Figure 19. Similarly, the ratio of the portion of the long side 52 of the deposition mask portion 51 that is connected to the support portion 56 is calculated, for example, by dividing the sum of the widths of the portions of the long side 52 that are connected to the support portion 56 by the length K1 (see Figure 18) of the long side 52.

[0095] Furthermore, the ratio of fracture surfaces 27b on the short side 27 of the deposition mask 20 can be calculated, for example, by dividing the sum of the widths K6 (see Figure 21) of the fracture surfaces 27b present on the short side 27 by the length K5 (see Figure 21) of the short side 27. Similarly, the ratio of fracture surfaces on the long side 26 of the deposition mask 20 can be calculated, for example, by dividing the sum of the widths of the fracture surfaces present on the long side 26 by the length of the long side 26.

[0096] Alternatively, the ratio of the short sides 53 of the deposition mask portion 51 that are connected to the support portion 56 may be calculated by dividing the number of short sides 53 that are connected to the support portion 56 by the length K2 of the short sides 53. In the example shown in Figure 19, the number of short sides 53 that are connected to the support portion 56 is 4. Similarly, the ratio of the long sides 52 of the deposition mask portion 51 that are connected to the support portion 56 may be calculated by dividing the number of long sides 52 that are connected to the support portion 56 by the length K1 of the long sides 52.

[0097] Similarly, the ratio of fracture surfaces 27b on the short side 27 of the deposition mask 20 may be calculated by dividing the number of fracture surfaces 27b present on the short side 27 by the length K5 of the short side 27. Similarly, the ratio of fracture surfaces on the long side 26 of the deposition mask 20 may be calculated by dividing the number of fracture surfaces present on the long side 26 by the length of the long side 26.

[0098] (Variation of the support part) In the above-described embodiment, an example was shown in which there is no support portion 56 between the long sides 52 of two adjacent deposition mask portions 51. However, the embodiment is not limited to this, and as shown in Figure 27, there may be a support portion 56 between the long sides 52 of two adjacent deposition mask portions 51 that extends in the transport direction T1 and is not connected to the long sides 52 of the deposition mask portions 51.

[0099] Other aspects of the present invention will be described.

[0100] When the perforations are broken, the deposition mask is pulled away from the metal plate, which can cause the metal plate to deform. For example, deformation such as a wavy shape may appear on the long side of the deposition mask. As a result, the dimensional and positional accuracy of the deposition material adhering to the substrate through the through-holes located near the long side of the deposition mask is reduced.

[0101] Another aspect of the present invention aims to provide a method for manufacturing a vapor-deposited mask that can effectively solve the aforementioned problems.

[0102] Another aspect of the present invention is a method for manufacturing a vapor deposition mask having a pair of long sides and a pair of short sides and having a plurality of through holes, comprising the steps of: preparing a metal plate; processing the metal plate into an intermediate product having a plurality of vapor deposition mask portions having a pair of long sides and a pair of short sides and having a plurality of through holes, and a support portion surrounding the plurality of vapor deposition mask portions and partially connected to the short sides of the plurality of vapor deposition mask portions; and separating the vapor deposition mask portions from the support portion to obtain the vapor deposition mask, wherein in the intermediate product, the long sides of the vapor deposition mask portions are not connected to the support portion.

[0103] Another aspect of the present invention is a method for manufacturing a vapor deposition mask having a pair of long sides and a pair of short sides and having a plurality of through holes, comprising the steps of: preparing a metal plate; processing the metal plate into an intermediate product having a plurality of vapor deposition mask portions having a pair of long sides and a pair of short sides and having a plurality of through holes, and a support portion surrounding the plurality of vapor deposition mask portions and being partially connected to the plurality of vapor deposition mask portions; and separating the vapor deposition mask portions from the support portion to obtain the vapor deposition mask, wherein in the intermediate product, the ratio of the portion of the long sides of the vapor deposition mask portion connected to the support portion is smaller than the ratio of the portion of the short sides of the vapor deposition mask portion connected to the support portion. The ratio of the portion of the long side of the deposition mask portion that is connected to the support portion may be calculated by dividing the sum of the widths of the portions of the long side that are connected to the support portion by the length of the long side, and the ratio of the portion of the short side of the deposition mask portion that is connected to the support portion may be calculated by dividing the sum of the widths of the portions of the short side that are connected to the support portion by the length of the short side. Alternatively, the ratio of the portion of the long side of the deposition mask portion that is connected to the support portion may be calculated by dividing the number of portions of the long side that are connected to the support portion by the length of the long side, and the ratio of the portion of the short side of the deposition mask portion that is connected to the support portion may be calculated by dividing the number of portions of the short side that are connected to the support portion by the length of the short side.

[0104] In a method for manufacturing a vapor deposition mask according to another aspect of the present invention, preferably, the portion of the long side of the vapor deposition mask portion that overlaps with the through hole when viewed along the width direction of the intermediate product is not connected to the support portion. More preferably, the entire long side of the vapor deposition mask portion is not connected to the support portion.

[0105] In a method for manufacturing a vapor deposition mask according to another aspect of the present invention, the intermediate product may include a plurality of protrusions on the short side of the vapor deposition mask portion that protrude toward and are connected to the support portion.

[0106] In a method for manufacturing a vapor deposition mask according to another aspect of the present invention, in the intermediate product, the plurality of vapor deposition mask portions are arranged in a direction intersecting the long side, and the support portion does not need to be present between the long sides of two adjacent vapor deposition mask portions.

[0107] In a method for manufacturing a vapor deposition mask according to another aspect of the present invention, the processing step may include etching the metal plate to form the through-hole and the gap between the long side of the vapor deposition mask portion and the support portion.

[0108] In the processing step of the method for manufacturing a vapor deposition mask according to another aspect of the present invention, the metal plate may be processed while being transported along the direction of the long side of the vapor deposition mask portion.

[0109] In the separation step of the method for manufacturing a vapor deposition mask according to another aspect of the present invention, the vapor deposition mask portion may be separated from the support portion by rupturing the portion of the short side of the vapor deposition mask portion that is connected to the support portion.

[0110] In a method for manufacturing a vapor deposition mask according to another aspect of the present invention, the thickness of the metal plate may be 50 μm or less.

[0111] Another aspect of the present invention is a metal plate-shaped intermediate product on which a deposition mask is arranged, which includes a pair of long sides and a pair of short sides and has a plurality of through holes, comprising: a deposition mask portion which includes a pair of long sides and a pair of short sides and has a plurality of through holes, and a support portion which surrounds the deposition mask portion and is partially connected to the short sides of the deposition mask portion, wherein the long sides of the deposition mask portion are not connected to the support portion.

[0112] Another aspect of the present invention is a metal plate-shaped intermediate product on which a deposition mask is arranged, which includes a pair of long sides and a pair of short sides and has a plurality of through holes, comprising: a deposition mask portion which includes a pair of long sides and a pair of short sides and has a plurality of through holes, and a support portion which surrounds the deposition mask portion and is partially connected to the deposition mask portion, wherein the ratio of the portion of the long sides of the deposition mask portion that is connected to the support portion is smaller than the ratio of the portion of the short sides of the deposition mask portion that is connected to the support portion. The ratio of the portion of the long side of the deposition mask portion that is connected to the support portion may be calculated by dividing the sum of the widths of the portions of the long side that are connected to the support portion by the length of the long side, and the ratio of the portion of the short side of the deposition mask portion that is connected to the support portion may be calculated by dividing the sum of the widths of the portions of the short side that are connected to the support portion by the length of the short side. Alternatively, the ratio of the portion of the long side of the deposition mask portion that is connected to the support portion may be calculated by dividing the number of portions of the long side that are connected to the support portion by the length of the long side, and the ratio of the portion of the short side of the deposition mask portion that is connected to the support portion may be calculated by dividing the number of portions of the short side that are connected to the support portion by the length of the short side.

[0113] In an intermediate product according to another aspect of the present invention, preferably, the portion of the long side of the deposition mask portion that overlaps with the through hole when viewed along the width direction of the intermediate product is not connected to the support portion. More preferably, the entire long side of the deposition mask portion is not connected to the support portion.

[0114] In an intermediate product according to another aspect of the present invention, the short side of the deposition mask portion may include a plurality of protrusions that project toward and are connected to the support portion.

[0115] In an intermediate product according to another aspect of the present invention, the thickness of the deposition mask portion and the support portion may be 50 μm or less.

[0116] In an intermediate product according to another aspect of the present invention, the plurality of deposition mask portions are arranged in a direction intersecting the long side, and the support portion does not need to be present between the long sides of two adjacent deposition mask portions.

[0117] Another aspect of the present invention is a vapor deposition mask comprising a metal plate-shaped substrate having a pair of long sides and a pair of short sides, and a plurality of through holes formed in the substrate, wherein the short sides of the substrate have partially fractured surfaces, while the long sides of the substrate do not have fractured surfaces.

[0118] Another aspect of the present invention is a vapor deposition mask comprising a metal plate-shaped substrate having a pair of long sides and a pair of short sides, and a plurality of through holes formed in the substrate, wherein the ratio of the fracture surface area on the long side of the substrate is smaller than the ratio of the fracture surface area on the short side of the substrate. The ratio of fracture surfaces on the long side of the substrate may be calculated by dividing the sum of the widths of the fracture surfaces present on the long side by the length of the long side, and the ratio of fracture surfaces on the short side of the substrate may be calculated by dividing the sum of the widths of the fracture surfaces present on the short side by the length of the short side. Alternatively, the ratio of fracture surfaces on the long side of the substrate may be calculated by dividing the number of fracture surfaces present on the long side by the length of the long side, and the ratio of fracture surfaces on the short side of the substrate may be calculated by dividing the number of fracture surfaces present on the short side by the length of the short side.

[0119] In another embodiment of the present invention, in a deposition mask, preferably, the fracture surface does not exist in the region that overlaps with the through-hole when the long side is viewed along the width direction of the deposition mask. More preferably, the fracture surface does not exist over the entire long side of the substrate.

[0120] In another embodiment of the present invention, the short side of the substrate may include a plurality of protrusions that project outward and have the fracture surface.

[0121] In another embodiment of the present invention, the shortest distance in the planar direction of the substrate from the long side of the substrate to the through hole may be 50 μm or less.

[0122] In another embodiment of the present invention, the substrate has a first surface facing the substrate to which the vapor deposition material that has passed through the through-holes adheres, and a second surface located on the opposite side of the first surface, and the long side of the substrate may have a cross-sectional shape that protrudes most outward at the portion where it intersects with the first surface.

[0123] In another embodiment of the present invention, the thickness of the substrate may be 50 μm or less.

[0124] According to another aspect of the present invention, a vapor deposition mask in which deformation of the long side is suppressed can be manufactured. [Explanation of symbols]

[0125] 10. Evaporation mask device 15 frames 20 Vapor deposition masks 21 Base material 22 Effective area 23 Surrounding area 25 Through holes 26 Long side 27 Short side 27a Convex part 27b Fracture surface 27c Bali 30 First recess 31 Wall surface 35 Second recess 36 Wall surface 41 Connection part 43 Top section 50 Intermediate Products 51 Vapor deposition mask portion 52 Long side 53 Short side 53a Convex part 54 connection points 55 gaps 56 Support part 64 Metal plate 65a First resist pattern 65b Second Resist Pattern 65c First resist film 65d Second resist film 70 Processing equipment 72 Conveyor rollers 73 Separation device 90 Vapor deposition equipment 92 Organic EL board 98 Vapor deposition materials

Claims

[Claim 1] It is a vapor deposition mask, A metal plate-shaped base material having a pair of long sides and a pair of short sides, a first surface and a second surface located opposite the first surface, The substrate comprises a plurality of through holes formed in the substrate, A vapor deposition mask wherein, in the cross-section of the vapor deposition mask, each of the pair of long sides has a curved surface that widens outward from the second surface side toward the first surface side.

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