A substrate processing apparatus, a method for transporting a substrate support, a substrate processing method, a method for manufacturing a semiconductor device, and a program.

Abstract

To provide a substrate processing apparatus, a program to be executed by the substrate processing apparatus, and a method of manufacturing a semiconductor device, configured to reduce susceptibility to the effects of heat while suppressing the following problem in which, when processing a substrate inside a process furnace, the substrate becomes a high temperature immediately after the processing, therefore, there is a need to wait for the substrate to cool down, which may lead to a decrease in throughput.SOLUTION: A substrate processing apparatus 10 includes: a process chamber 201 in which a substrate is processed; a boat 217a and a boat 217b serving as substrate supports which support the substrate; supports 43a, 43b supporting the substrate supports; a rotatable table 40 having multiple supports; and an isolator 44 serving as a heat conduction inhibitor configured to suppress heat conduction between the plurality of supports.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus, a method for transporting a substrate support, a program, and a method for manufacturing a semiconductor device.

Background Art

[0002] As one step of a semiconductor device manufacturing process, a step of carrying a substrate support for supporting a substrate into a processing furnace of a substrate processing apparatus and processing the substrate may be performed (see, for example, Patent Document 1).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] As described above, when processing a substrate in a processing furnace, the substrate immediately after processing becomes high temperature, so it has to wait until it cools, and the throughput may decrease.

[0005] The present disclosure provides a technology capable of improving throughput and being less affected by heat.

Means for Solving the Problems

[0006] According to one aspect of the present disclosure, a processing chamber for processing a substrate, a substrate support for supporting the substrate, a support portion for supporting the substrate support, a turntable provided with a plurality of the support portions, a heat conduction suppression portion for suppressing heat conduction between the plurality of support portions, and a technology having the above is provided.

Effects of the Invention

[0007] According to this disclosure, it is possible to improve throughput while making the system less susceptible to thermal effects. [Brief explanation of the drawing]

[0008] [Figure 1] Figure 1 is a plan cross-sectional view of a substrate processing apparatus according to one aspect of the present disclosure. [Figure 2] Figure 2 is a side cross-sectional view of a substrate processing apparatus according to one embodiment of the present disclosure. [Figure 3] Figure 3 shows an example of a substrate support in one aspect of the present disclosure. [Figure 4] Figure 4 is a schematic diagram of the controller of a substrate processing apparatus in one aspect of the present disclosure, and shows the controller's control system in block diagram form. [Figure 5] Figure 5 shows a modified example of a turntable for a substrate processing apparatus in another aspect of the present disclosure. [Modes for carrying out the invention]

[0009] <One aspect of this disclosure> The following description will explain one aspect of this disclosure, primarily with reference to Figures 1 to 4. It should be noted that the drawings used in the following description are schematic, and the dimensional relationships and proportions of the elements shown in the drawings do not necessarily correspond to reality. Furthermore, the dimensional relationships and proportions of the elements do not necessarily correspond between multiple drawings.

[0010] (1) Configuration of substrate processing apparatus A predetermined number of wafers 200, which are substrates to be processed by the substrate processing apparatus 10, are placed in a pod 12, which is a sealed substrate transport container, and are loaded into and unloaded from the substrate processing apparatus 10.

[0011] The substrate processing apparatus 10 has a housing 14, and a substrate loading / unloading port 18 adjacent to the pod mounting table 16 is provided on the front wall of the housing 14. A pod opener 20 is provided at the substrate loading / unloading port 18. The lid of the pod 12 is opened and closed by the pod opener 20, and the wafer 200 is loaded and unloaded through the substrate loading / unloading port 18.

[0012] The interior of the housing 14 is defined by a transfer region 24, a load lock chamber 26 adjacent to the rear of the transfer region 24, and a processing region 28 adjacent to the upper side of the load lock chamber 26 where the processing furnace 202 is disposed.

[0013] That is, a load lock chamber 26 is provided at the rear inside of the housing 14, and a processing furnace 202 is continuously provided above the load lock chamber 26. The furnace opening formed at the lower end of the processing furnace 202 can be opened and closed by a furnace port shutter 30.

[0014] In the transfer region 24, a substrate transfer machine 131 is provided between the pod mounting table 16 and the load lock chamber 26. The substrate transfer machine 131 can hold a predetermined number of wafers 200, for example, five wafers, and load and unload them into or from a boat 217a or a boat 217b as a substrate support through the front opening 32 of the load lock chamber 26. That is, the substrate transfer machine 131 can transfer the wafer 200 between the pod 12 on the pod mounting table 16 and the boat 217a or the boat 217b in the first region 26a described later.

[0015] The front opening 32 is opened and closed by a gate valve 33, and in the closed state, the front opening 32 is hermetically closed.

[0016] The load lock chamber 26 is mainly provided with a turntable 40, boats 217a and 217b, and a boat elevator 115 as a transfer mechanism.

[0017] The turntable 40 is, for example, disk-shaped. A rotating shaft 41 is provided substantially at the center of the lower surface of the turntable 40. A turntable rotation mechanism 42 for rotating the turntable 40 is connected to the rotating shaft 41. Further, support portions 43a and 43b for supporting the boats 217a and 217b are provided on the upper surface of the turntable 40. That is, two boats 217a and 217b are rotatably installed on the turntable 40.

[0018] An isolation portion 44 as a heat conduction suppression portion is provided substantially perpendicular to the upper surface of the turntable 40 between the support portion 43a and the support portion 43b of the turntable 40. The isolation portion 44 is configured in a plate shape. Further, the isolation portion 44 has a structure having a vacuum heat insulation effect. Here, having a vacuum heat insulation effect includes not only the case where the isolation portion 44 is a vacuum heat insulating material which is a heat insulating material with a vacuum state inside, but also those having an effect equivalent to that of the vacuum heat insulating material.

[0019] Also, the upper end of the isolation portion 44 is configured to be disposed at a position higher than the upper end surfaces of the boats 217a and 217b in a state where the boats 217a and 217b are respectively supported by the support portions 43a and 43b. The isolation portion 44 is configured to suppress heat conduction between the boat 217a supported by the support portion 43a and the boat 217b supported by the support portion 43b between the support portions 43a and 43b, and thermally isolate between the boat 217a and the boat 217b.

[0020] The boats 217a and 217b are configured to support a plurality of wafers 200 in a multi-stage horizontal posture as shown in, for example, FIG. 3. The isolation portion 44 may be configured to thermally isolate at least the regions where the wafers 200 are placed on the boats 217a and 217b.

[0021] The processing chamber 201 inside the processing furnace 202 is above the turntable 40 and is arranged above a second region 26b described later.

[0022] Within the load lock chamber 26, above the turntable 40, there is a first region 26a for transferring the wafer 200 between the boat 217a or boat 217b and the pod 12, and a second region 26b for transferring the boat 217a or boat 217b between the processing chamber 201 and the turntable 40. The first region 26a and the second region 26b are separated on the turntable 40 by an isolation section 44. In other words, the first region 26a and the second region 26b are thermally isolated, with heat conduction suppressed.

[0023] The boat elevator 115 is located in the second area 26b. The boat elevator 115 is configured to transport the boat 217a or boat 217b supported by the support part 43a or support part 43b between the processing chamber 201 in the processing furnace 202 and the turntable 40.

[0024] Support parts 43a and 43b are used as sealing parts that hermetically close the furnace opening of the processing furnace 202, respectively.

[0025] The boat 217a or boat 217b located in the second area 26b is configured to be raised and lowered by the boat elevator 115, brought into the processing furnace 202, and removed from the processing furnace 202.

[0026] The housing 14 constituting the load lock chamber 26 is provided with an exhaust port 46 for exhausting the atmosphere inside the load lock chamber 26. An exhaust pipe 48 is connected to the exhaust port 46. A vacuum pump 53, which serves as a vacuum evacuation device, is connected to the exhaust pipe 48 via a pressure sensor 51, which acts as a pressure detector (pressure detection unit) for detecting the pressure inside the housing 14, and an APC (Auto Pressure Controller) valve 52, which acts as a pressure regulator (pressure adjustment unit). The APC valve 52 can be opened and closed while the vacuum pump 53 is operating to perform vacuum evacuation and stop vacuum evacuation inside the load lock chamber 26. Furthermore, while the vacuum pump 53 is operating, the valve opening can be adjusted based on the pressure information detected by the pressure sensor 51 to adjust the pressure inside the load lock chamber 26. The exhaust system mainly consists of the exhaust pipe 48, the APC valve 52, and the pressure sensor 51. The vacuum pump 53 may also be included in the exhaust system.

[0027] (2) Controller configuration Next, the configuration of the controller 121, which serves as the control unit (control means), will be described. As shown in Figure 4, the controller 121 is configured as a computer equipped with a CPU (Central Processing Unit) 121a, RAM (Random Access Memory) 121b, storage device 121c, and I / O port 121d. The RAM 121b, storage device 121c, and I / O port 121d are configured to exchange data with the CPU 121a via an internal bus 121e. An input / output device 122, configured as, for example, a touch panel, is connected to the controller 121.

[0028] The storage device 121c is composed of, for example, flash memory, an HDD (Hard Disk Drive), etc. The storage device 121c contains, in a readable format, control programs that control the operation of the substrate processing device 10, and process recipes that describe the procedures and conditions for the substrate processing described later. The process recipe is a combination of steps in the substrate processing process described later that can be executed by the controller 121 to obtain a predetermined result, and functions as a program. Hereinafter, this process recipe and control program will be collectively referred to simply as a program. In this specification, the term "program" may include only the process recipe, only the control program, or both. The RAM 121b is configured as a memory area (work area) where programs and data read by the CPU 121a are temporarily held.

[0029] The I / O port 121d is connected to the pressure sensor 51, APC valve 52, vacuum pump 53, gate valve 33, boat elevator 115, turntable rotation mechanism 42, substrate transfer machine 131, etc.

[0030] The CPU 121a is configured to read and execute a control program from the storage device 121c, and to read a process recipe from the storage device 121c in response to input of operation commands from the input / output device 122. The CPU 121a is then configured to control the vacuum evacuation operation in the load lock chamber 26 by the pressure sensor 51, APC valve 52 and vacuum pump 53, the opening and closing operation by the gate valve 33, the transport operation of the wafer 200 by the substrate transfer machine 131, the rotation operation of the turntable 40 by the turntable rotation mechanism 42, and the lifting and lowering operation of the boat 217a or boat 217b by the boat elevator 115, in accordance with the contents of the read process recipe.

[0031] The controller 121 is not limited to being configured as a dedicated computer; it may also be configured as a general-purpose computer. For example, the controller 121 according to this embodiment can be configured by preparing an external storage device 123 containing the above-mentioned program (e.g., magnetic tape, magnetic disk such as a flexible disk or hard disk, optical disk such as a CD or DVD, magneto-optical disk such as an MO, semiconductor memory such as a USB memory (USB Flash Drive) or memory card), and installing the program on a general-purpose computer using the external storage device 123. The means for supplying the program to the computer is not limited to supplying it via the external storage device 123. For example, the program may be supplied without going through the external storage device 123 by using communication means such as the internet or a dedicated line. The storage device 121c and the external storage device 123 are configured as computer-readable recording media. Hereinafter, these will be collectively referred to simply as recording media. In this specification, the term recording media may include only the storage device 121c, only the external storage device 123, or both.

[0032] (3) Substrate processing process Next, we will describe the overview of substrate processing using the substrate processing apparatus 10 with the above configuration as one step in the semiconductor manufacturing process. In the following description, the operation of each part of the substrate processing apparatus 10 is controlled by the controller 121.

[0033] Pod 12 is transported to the pod mounting platform 16.

[0034] The substrate loading port 18 and pod 12 are opened, the front opening 32 is opened by the gate valve 33, and the wafer 200 is transferred to the boat 217a in the first region 26a by the substrate transfer machine 131.

[0035] Once a predetermined number of wafers 200 are loaded into the boat 217a in the first region 26a, the boat 217a is transferred to the second region 26b by the rotation of the turntable 40. Then, the front opening 32 is closed by the gate valve 33, and the load lock chamber 26 is depressurized by vacuuming from the exhaust pipe 48.

[0036] When the load lock chamber 26 is reduced to the same pressure as the pressure inside the processing furnace 202, the furnace opening is opened by the furnace opening shutter 30. Subsequently, the boat 217a on the support section 43a is loaded into the processing furnace 202 by the boat elevator 115.

[0037] After loading, the wafer 200 undergoes predetermined processing in the processing chamber 201 within the processing furnace 202. At this time, an empty boat 217b is placed in the first region 26a.

[0038] While the wafer 200 in boat 217a is being processed, the next pod 12 is transported to the pod mounting table 16, and in the same procedure as described above, the substrate loading port 18 and pod 12 are opened, the front opening 32 is opened by the gate valve 33, and the wafer 200 is transferred to boat 217b in the first area 26a by the substrate transfer machine 131. Then, the front opening 32 is closed by the gate valve 33, and the load lock chamber 26 is depressurized by vacuuming from the exhaust pipe 48.

[0039] After processing, the boat 217a is pulled onto the turntable 40 by the boat elevator 115, and the furnace opening is closed by the furnace opening shutter 30. At this time, the turntable 40 supports both the boat 217a, which supports the wafer 200 after substrate processing, and the boat 217b, which supports the wafer 200 before substrate processing. In other words, the processed wafer 200 and the unprocessed wafer 200 are placed on the turntable 40 at the same time.

[0040] Here, since the wafer 200 is at a high temperature immediately after processing, if the distance between the processed wafer 200 and the unprocessed wafer 200 is too narrow, the surface of the unprocessed wafer 200 may oxidize due to the heat, or grain growth may occur on the surface of the wafer 200. On the other hand, if the distance between the processed wafer 200 and the unprocessed wafer 200 is increased, the footprint will increase, leading to a larger device.

[0041] In this embodiment, since an isolation section 44 is provided between boat 217a and boat 217b on the turntable 40, even when the distance between the wafer 200 immediately after processing and the wafer 200 before processing is narrowed, heat conduction between the second region 26b where boat 217a is located and the first region 26a where boat 217b is located can be suppressed. In other words, the footprint can be reduced and the apparatus can be miniaturized while thermal isolation between boats 217a and 217b can be achieved. Therefore, the wafer 200 before processing can be made less susceptible to the heat influence from the wafer 200 immediately after processing.

[0042] Then, by the rotation of the turntable 40, the boat 217a supporting the processed wafer 200 is moved from the second region 26b to the first region 26a, and the boat 217b supporting the unprocessed wafer 200 is moved from the first region 26a to the second region 26b. In other words, the positions of the boats 217a and 217b are swapped by rotating the turntable 40 while they are supported by their respective support parts 43a and 43b, while suppressing heat conduction in each region.

[0043] Then, the boat 217b is loaded into the processing furnace 202 by the boat elevator 115.

[0044] After loading, the wafer 200 undergoes predetermined processing in the processing chamber 201. At this time, a boat 217a supporting the processed wafer 200 is placed in the first area 26a. Once the wafer 200 supported by the boat 217a has cooled, the inside of the load lock chamber 26 is restored to atmospheric pressure and the gate valve 33 is opened. Subsequently, the wafer 200 and pod 12 are discharged to the outside of the housing 14 in the reverse order of the above procedure, and the next wafer 200 is transferred to the boat 217a in the same procedure as described above.

[0045] As described above, a turntable 40 supporting multiple boats is provided in the load lock chamber 26, allowing a wafer 200 to be transferred to another boat while a wafer 200 supported on one boat is being processed. In other words, substrate processing and substrate transfer processing can be performed simultaneously using multiple boats. This improves the substrate processing speed and increases throughput. Furthermore, by thermally isolating each boat on the turntable 40, the wafer before processing is less susceptible to thermal influence from the boat immediately after processing. In other words, oxidation of the surface of the wafer before processing due to thermal influence and the occurrence of crystal grain growth on the surface can be suppressed.

[0046] <Other aspects of this disclosure> Next, a substrate processing apparatus according to another aspect of the present disclosure will be described with reference to Figure 5. The substrate processing apparatus in this aspect is configured in the same way as the apparatus configuration and control configuration shown in Figures 1 to 4, and elements that are substantially the same as those described in Figures 1 to 3 are denoted by the same reference numerals, and their descriptions are omitted. Specifically, in this aspect, inert gas supply units 54a and 54b are used as heat conduction suppression units for the turntable 40 in the substrate processing apparatus 10 described above.

[0047] (1) Configuration of the turntable In this embodiment, inert gas supply units 54a and 54b are provided between the support units 43a and 43b on the turntable 40, and between the boats 217a and 217b, as heat conduction suppression units that block heat conduction. The inert gas supply units 54a and 54b are provided to supply inert gas to the boats 217a and 217b on the turntable 40, respectively. The inert gas supply units 54a and 54b can also be called cooling gas supply units that supply cooling gas to cool the wafer 200 and the boats 217a and 217b.

[0048] The inert gas supply units 54a and 54b are installed on the turntable 40 and are configured to rotate together with the boats 217a and 217b. Furthermore, the inert gas supply units 54a and 54b are positioned opposite each other to the boats 217a and 217b, respectively. The inert gas supply units 54a and 54b are also positioned point-symmetrically with respect to the rotation axis 41 of the turntable 40. The inert gas supply units 54a and 54b have multiple vertical holes formed at heights corresponding to the wafers 200 supported by the boats 217a and 217b, respectively, and are configured to supply inert gas to each wafer 200 through these multiple holes. In other words, by supplying inert gas from the inert gas supply units 54a and 54b to the boats 217a and 217b, thermal isolation between the boats 217a and 217b is possible.

[0049] (2) Substrate processing process Next, we will describe the overview of substrate processing by the substrate processing apparatus 10 when using a turntable 40 in another configuration described above, as one step in the semiconductor manufacturing process.

[0050] Pod 12 is transported to the pod mounting platform 16.

[0051] The substrate loading port 18 and pod 12 are opened, the front opening 32 is opened by the gate valve 33, and the wafer 200 is transferred to the boat 217a in the first region 26a by the substrate transfer machine 131.

[0052] When a predetermined number of wafers 200 are loaded into the boat 217a in the first region 26a, the boat 217a is transferred to the second region 26b by the rotation of the turntable 40. At this time, the supply of inert gas by the inert gas supply units 54a and 54b is stopped.

[0053] When the load lock chamber 26 is reduced to the same pressure as the pressure inside the processing furnace 202, the furnace opening is opened by the furnace opening shutter 30. Subsequently, the boat 217a is loaded into the processing furnace 202 by the boat elevator 115.

[0054] After loading, the wafer 200 undergoes predetermined processing in the processing furnace 202. At this time, an empty boat 217b is placed in the first region 26a.

[0055] While the wafer 200 in boat 217a is being processed, the next pod 12 is transported to the pod mounting table 16, and in the same procedure as described above, the substrate loading port 18 and pod 12 are opened, the front opening 32 is opened by the gate valve 33, and the wafer 200 is transferred to boat 217b in the first area 26a by the substrate transfer machine 131. Then, the front opening 32 is closed by the gate valve 33, and the load lock chamber 26 is depressurized by vacuuming from the exhaust pipe 48.

[0056] After processing, the boat 217a is pulled onto the turntable 40 by the boat elevator 115, and the furnace opening is closed by the furnace opening shutter 30. At this time, the turntable 40 is equipped with boat 217a, which supports the processed wafer 200, and boat 217b, which supports the unprocessed wafer 200. At this time, inert gas is supplied from the inert gas supply units 54a and 54b to boats 217a and 217b, respectively. The inert gas supplied to boats 217a and 217b is exhausted to the outside of the substrate processing apparatus 10 via the exhaust pipe 48.

[0057] At this time, since inert gas is supplied to both boat 217a and boat 217b on the turntable 40, heat conduction is suppressed between the second region 26b where boat 217a supporting the processed wafer 200 is located and the first region 26a where boat 217b supporting the unprocessed wafer 200 is located. In other words, thermal isolation between boats 217a and 217b is possible by supplying inert gas from the inert gas supply units 54a and 54b.

[0058] Then, due to the rotation of the turntable 40, the boat 217a supporting the processed wafer 200 is moved from the second region 26b to the first region 26a, and the boat 217b supporting the unprocessed wafer 200 is moved from the first region 26a to the second region 26b. At this time, the amount of inert gas supplied from the inert gas supply units 54a and 54b to the boats 217a and 217b respectively is set so that the amount of inert gas supplied when the boat 217a supporting the immediately processed wafer 200 is moved from the second region 26b to the first region 26a is greater than the amount of inert gas supplied when the boat 217b supporting the unprocessed wafer 200 is moved from the first region 26a to the second region 26b. In other words, the amount of inert gas supplied from the inert gas supply unit 54a is greater than the amount of inert gas supplied from the inert gas supply unit 54b. This makes it possible to shorten the cooling time of the high-temperature boat immediately after processing and improve the substrate processing speed. Furthermore, by avoiding contact between the wafer and the atmosphere immediately after processing, oxidation of the film formed by the substrate processing can be suppressed. In addition, the thermal effects on the unprocessed wafer before processing can be suppressed.

[0059] Furthermore, when the boat 217b in the second region 26b supports the wafer 200 before processing, the inert gas supply unit 54a stops supplying inert gas to the boat 217b supporting the wafer 200 immediately after processing in the first region 26a until the boat 217b in the second region 26b is transferred to the processing chamber 201. In other words, the supply of inert gas from the inert gas supply unit 54a is stopped until the boat 217b in the second region 26b is transferred to the processing chamber 201. This suppresses the flow of heat from the first region 26a into the second region 26b. That is, the wafer before processing can be made less susceptible to thermal influence.

[0060] In other words, by supplying an inert gas in each region to suppress heat conduction, the positions of the boats 217a and 217b are swapped by rotating the turntable 40 while they are supported by their respective support parts 43a and 43b.

[0061] Then, the boat 217b is loaded into the processing furnace 202 by the boat elevator 115.

[0062] After loading, the wafer 200 undergoes predetermined processing in the processing chamber 201. At this time, a boat 217a supporting the processed wafer 200 is placed in the first area 26a. Once the wafer 200 has cooled, the inside of the load lock chamber 26 is restored to atmospheric pressure, and then the gate valve 33 is opened. Subsequently, the wafer 200 and pod 12 are discharged to the outside of the housing 14 in the reverse order of the above procedure, and the next wafer 200 is transferred to the boat 217a in the same procedure as described above.

[0063] In this embodiment, the same effects as in the above-described embodiment can be obtained. Furthermore, in this embodiment, the cooling efficiency can be further improved by adjusting the amount of inert gas supplied according to the process.

[0064] Although one aspect of this disclosure has been specifically described above, this disclosure is not limited to the above-described aspect and can be modified in various ways without departing from its essence.

[0065] For example, in the embodiments described above, the case in which an isolation section or an inert gas supply section is used on the turntable 40 as a heat conduction suppression section was explained as an example, but the disclosure is not limited thereto. That is, both an isolation section 44 and inert gas supply sections 54a and 54b may be provided on the turntable 40. In other words, the boats 217a and 217b may be isolated by the isolation section 44, and inert gas supply sections 54a and 54b may be provided in the respective areas where the isolated boats 217a and 217b are located. The same effects as in the embodiments described above can be obtained in this embodiment as well. Furthermore, in this embodiment, the cooling efficiency can be further improved by adjusting the amount of inert gas supplied according to the process.

[0066] Furthermore, although the above-described embodiment was explained using the example of arranging two boats, boat 217a and boat 217b, on the turntable 40, this disclosure is not limited to this. That is, this disclosure can be similarly applied even when three or more boats are arranged on the turntable 40.

[0067] Furthermore, although the above-described embodiment uses the example of providing an inert gas supply unit that supplies inert gas to each of the multiple boats, this disclosure is not limited to this. That is, there may be just one inert gas supply unit, as long as the heat conduction of each boat is suppressed. For example, an air curtain may be generated between the multiple boats.

[0068] Furthermore, it is preferable that the recipes used for each process be prepared individually according to the processing content and stored in the storage device 121c via a telecommunications line or external storage device 123. When starting each process, it is preferable that the CPU 121a appropriately selects the appropriate recipe from among the multiple recipes stored in the storage device 121c according to the processing content. This makes it possible to form films of various film types, composition ratios, film quality, and film thickness with good reproducibility using a single substrate processing device. In addition, it is possible to reduce the burden on the operator and start each process quickly while avoiding operational errors.

[0069] Furthermore, the above-mentioned recipes are not limited to newly created ones; they may also be prepared, for example, by modifying existing recipes already installed in the board processing device. When modifying a recipe, the modified recipe may be installed in the board processing device via a telecommunications line or a recording medium containing the recipe. Alternatively, existing recipes already installed in the board processing device may be directly modified by operating the input / output device 122 provided in the existing board processing device.

[0070] Furthermore, the embodiments described above describe an example of forming a film using a batch-type substrate processing apparatus that processes multiple substrates at once. This disclosure is not limited to the embodiments described above, and can be suitably applied, for example, when forming a film using a single-wafer substrate processing apparatus that processes one or several substrates at once. Furthermore, the embodiments described above describe an example of forming a film using a substrate processing apparatus having a hot-wall type processing furnace. This disclosure is not limited to the embodiments described above, and can be suitably applied when forming a film using a substrate processing apparatus having a cold-wall type processing furnace.

[0071] Even when using these substrate processing devices, each process can be carried out using the same processing procedures and conditions as in the above-described embodiments and other embodiments, and the same effects as in the above-described embodiments and other embodiments can be obtained.

[0072] Furthermore, the above-described embodiments and other embodiments can be used in combination as appropriate. The processing procedure and processing conditions in this case can be the same as, for example, the processing procedure and processing conditions in the above-described embodiments and other embodiments. [Explanation of Symbols]

[0073] 40 Turntables 43 Support part 200 wafers (substrates) 201 Processing Room 217 Boat (Substrate support)

Claims

1. A processing room for processing substrates, Multiple substrate support members that support multiple substrates, Multiple support parts that support each of the aforementioned substrate support members, A rotating base equipped with multiple support parts, A heat conduction suppression unit is provided on the rotating base to thermally isolate the multiple substrate support members by a vacuum insulation effect, A substrate processing apparatus having

2. The substrate processing apparatus according to claim 1, wherein, among the plurality of substrate supports, one substrate support supports a processed substrate and the other substrate support supports an unprocessed substrate.

3. The substrate processing apparatus according to claim 2, wherein the heat conduction suppression unit is configured to thermally isolate the treated substrate from the untreated substrate.

4. The substrate processing apparatus according to claim 2, wherein the heat conduction suppression unit is configured to suppress the conduction of heat from the processed substrate to the unprocessed substrate.

5. The substrate processing apparatus according to claim 2, wherein the heat conduction suppression unit is configured to suppress oxidation or grain growth on the surface of the untreated substrate.

6. The substrate processing apparatus according to claim 1, further comprising a transfer mechanism for transferring one of the plurality of substrate supports between the processing chamber and the rotating table.

7. The substrate processing apparatus according to claim 1, wherein the processing chamber is located above the rotating table.

8. The substrate processing apparatus according to claim 1, wherein the heat conduction suppression unit is configured to thermally isolate at least the region on which the substrate is placed among the plurality of substrate support members.

9. The substrate processing apparatus according to claim 1, wherein the heat conduction suppression part is configured in the shape of a plate.

10. Above the rotating platform, there is a first region for transferring a substrate to one of the multiple substrate support members, and a second region between the processing chamber and the rotating platform for transferring the other substrate support member. The substrate processing apparatus according to claim 1, wherein the processing chamber is configured to be located above the second region.

11. The substrate processing apparatus according to claim 1, wherein the heat conduction suppression unit is an inert gas supply unit that supplies an inert gas to each of the substrate supports.

12. The substrate processing apparatus according to claim 11, wherein the inert gas supply unit is installed on the rotating base and is configured to rotate together with the plurality of substrate support members.

13. A processing chamber for processing substrates, Multiple substrate support members that support multiple substrates, Multiple support parts that support each of the aforementioned substrate support members, A rotating base equipped with multiple support parts, Above the rotating table, there is a first region for transferring a substrate to one of the plurality of substrate supports, and between the processing chamber and the rotating table, there is a second region for transferring the other substrate support. The rotating base is provided above the aforementioned rotating base and includes a heat conduction suppression unit that separates the first region and the second region to suppress heat conduction between the respective substrate supports, The heat conduction suppression unit is an inert gas supply unit that supplies an inert gas to each of the substrate supports, The amount of inert gas supplied from the inert gas supply unit to each of the multiple substrate support members is configured such that the amount of inert gas supplied when one of the multiple substrate support members moves from the second region to the first region is greater than the amount of inert gas supplied when one substrate support member moves from the first region to the second region. Circuit board processing equipment.

14. The substrate processing apparatus according to claim 13, wherein the substrate support that transfers the substrate from the second region to the first region is configured to support the processed substrate.

15. A processing chamber for processing substrates, Multiple substrate support members that support multiple substrates, Multiple support parts that support each of the aforementioned substrate support members, A rotating base equipped with multiple support parts, Above the rotating table, there is a first region for transferring a substrate to one of the plurality of substrate supports, and between the processing chamber and the rotating table, there is a second region for transferring the other substrate support. The rotating base is provided above the aforementioned rotating base and includes a heat conduction suppression unit that separates the first region and the second region to suppress heat conduction between the respective substrate supports, The heat conduction suppression unit is an inert gas supply unit that supplies an inert gas to each of the substrate supports, The inert gas supply unit is configured such that, when a substrate support in the second region supports a substrate before processing, it can stop supplying inert gas to the substrate support in the first region until the substrate support in the second region is transferred to the processing chamber. Circuit board processing equipment.

16. A method for transporting a substrate support using a substrate processing apparatus according to any one of Claim 1, Claim 13, and Claim 15.

17. A substrate processing method for processing a substrate using a substrate processing apparatus according to any one of Claim 1, Claim 13, and Claim 15.

18. A method for manufacturing a semiconductor device that processes a substrate using a substrate processing apparatus according to any one of Claim 1, Claim 13, and Claim 15.

19. A program that causes a computer to cause a substrate processing device to execute the substrate support transport method described in Claim 16.

20. The substrate processing apparatus according to claim 1, wherein the heat conduction suppression unit is provided perpendicular to the upper surface of the rotating table.

21. The substrate processing apparatus according to claim 20, wherein the upper end of the heat conduction suppression portion is configured to be at a higher position than the upper end of the substrate support.

22. The rotating platform is configured to be able to rotate with the heat conduction suppression unit positioned between the substrate support, which supports a plurality of processed substrates, and the substrate support, which supports a plurality of unprocessed substrates. The substrate processing apparatus according to claim 1.

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