Pre-cleaning chamber assembly architecture designed for improved maintainability

Abstract

An apparatus for processing a substrate is described herein. More specifically, the embodiments described herein relate to a separate preclean process module and a preclean control module coupled to a cluster tool assembly. Each preclean process module and each preclean control module are connected by a cable conduit configured to have power and control cables passing therethrough between the preclean process module and the preclean control module. A maintenance passage is formed through the cluster tool assembly. Each of the purge gas source, process gas source, manometer, isolation port, and throttle valve are all accessible from one side of the preclean process module.

Description

Technical Field

[0001] Embodiments of the present disclosure generally relate to systems for substrate processing. More particularly, the embodiments described herein relate to a system for performing a pre-cleaning process on a substrate for semiconductor processing.

Background Art

[0002] The pre-cleaning of a substrate can be performed either before or during substrate process processing. The pre-cleaning of a substrate can reduce the contamination of the substrate and remove unwanted residues or materials from the surface of the substrate before the process processing is performed. A pre-cleaning chamber is attached to a part of a processing tool, such as a linear or cluster tool. When the pre-cleaning chamber is attached to the processing tool, the substrate is passed through the pre-cleaning chamber during the process processing. The volume inside the pre-cleaning chamber is in fluid communication with the volume inside at least a part of the processing tool, such as a transfer chamber.

[0003] Current semiconductor manufacturing equipment utilizes more and more processing tools as technology develops. The maintenance of each processing tool after installation is performed to enable improved long-term processing results. The maintenance of the pre-cleaning chamber is performed to improve the cleaning performance. Maintenance is often difficult to perform due to space constraints between processing tools. Therefore, maintenance often requires long tool downtime, which increases the overall cost of ownership and reduces the tool availability. Previous attempts to reduce maintenance time and cost have led to an increase in the chamber installation area. Therefore, the installation area and useful area of the processing tools are factors that limit the amount and type of tools utilized within semiconductor manufacturing equipment.

[0004] Therefore, what is needed in the art is a processing tool with a reduced installation area and improved accessible maintenance points.

Summary of the Invention

[0005] This disclosure relates to apparatus for processing substrates, such as apparatus generally suitable for use in semiconductor manufacturing. In one embodiment, the apparatus includes a transfer chamber, a factory interface coupled to a first side of the transfer chamber, a plurality of process chambers coupled to a second side of the transfer chamber, and a pre-cleaning process module coupled to a third side of the transfer chamber between the factory interface and at least one of the plurality of process chambers. The pre-cleaning process module includes a pre-cleaning chamber and a gas panel disposed below the pre-cleaning chamber. A pre-cleaning control module is disposed separately from the pre-cleaning process module and adjacent to one of the plurality of process chambers. The pre-cleaning control module includes a power supply and a controller. Cable conduits are disposed between the pre-cleaning process module and the pre-cleaning control module.

[0006] In another embodiment, a pre-cleaning assembly suitable for use in semiconductor manufacturing is described. This pre-cleaning assembly includes a pre-cleaning process module. The pre-cleaning process module includes a pre-cleaning chamber, which includes a lid, a substrate support pedestal, and a plate stack. The lid is rotatable about a pivot axis. A gas panel is disposed below the pre-cleaning chamber. An isolation port is disposed on a first side of the pre-cleaning process module and extends in a first direction. A manometer is disposed on the first side and extends in a first direction. A pre-cleaning control module is disposed separately from the pre-cleaning process module and includes a power supply and a controller. A cable conduit is disposed between the pre-cleaning process module and the pre-cleaning control module. The cable conduit has a length greater than approximately 400 mm.

[0007] In another embodiment, an apparatus for substrate processing suitable for use in semiconductor manufacturing is described. The apparatus includes a transfer chamber, a factory interface coupled to a first side of the transfer chamber, four process chambers coupled to the transfer chamber, and a first pre-cleaning process module coupled to a second side of the transfer chamber between the factory interface and the first process chamber among the process chambers. The first pre-cleaning process module includes a pre-cleaning chamber and a gas panel disposed below the pre-cleaning chamber. The pre-cleaning chamber further includes a lid coupled to the transfer chamber and having a pivot axis adjacent to the transfer chamber, so that the lid rotates toward the transfer chamber when opened. A first pre-cleaning control module is disposed separately from the first pre-cleaning process module and adjacent to the first process chamber among the process chambers. The first pre-cleaning control module includes a power supply and a controller configured to control the pre-cleaning process in the pre-cleaning chamber. A first cable conduit is disposed between the first pre-cleaning process module and the first pre-cleaning control module and is configured to hold one or more electrical cables and one or more control cables.

[0008] To allow for a more detailed understanding of the features described above, a more detailed description of the Disclosure, which has been briefly summarized above, may be made by reference to embodiments partially shown in the accompanying drawings. However, it should be noted that the accompanying drawings only illustrate typical embodiments of the Disclosure and should therefore not be considered as limiting its scope, as the Disclosure may allow for other equally valid embodiments. [Brief explanation of the drawing]

[0009] [Figure 1] This is a schematic plan view of a cluster tool assembly for processing a substrate, according to embodiments described herein. [Figure 2] This is a schematic front isometric view of a first pre-cleaning process module according to an embodiment described herein. [Figure 3A] This is a schematic front isometric view of a first pre-wash control module according to an embodiment described herein. [Figure 3B] This is a schematic cross-sectional side view of a first cable conduit according to an embodiment described herein. [Figure 4] This is a schematic front isometric view of a pre-cleaning chamber with the lid open, according to an embodiment described herein. [Figure 5A] This is a schematic plan view of a portion of the cluster tool assembly shown in Figure 1, along with a maintenance passage, according to an embodiment described herein. [Figure 5B] This is a schematic side view of the maintenance passage between the first pre-cleaning process module and the first pre-cleaning control module in Figure 5A. [Modes for carrying out the invention]

[0010] The embodiments described herein generally relate to systems for substrate processing. More specifically, the embodiments described herein relate to systems for performing a pre-cleaning process on substrates for semiconductor processing. The system for pre-cleaning includes a pre-cleaning chamber and support equipment. The support equipment includes a gas panel and a pre-cleaning control module. The pre-cleaning control module includes a power supply and a controller. Cable conduits connect the pre-cleaning module to the pre-cleaning chamber, and one or more electrical or control cables pass through the cable conduits. The pre-cleaning chamber and gas panel form a pre-cleaning process module. The pre-cleaning process module is separate from the pre-cleaning control module in order to allow for separation of the footprint of the pre-cleaning process module and the footprint of the pre-cleaning control module when combined with a cluster tool, and to allow for the formation of maintenance pathways. Separating the pre-cleaning process module and the pre-cleaning control module reduces the footprint of the pre-cleaning process module and allows for improved maintenance pathways around both the pre-cleaning process module and the pre-cleaning control module. The cable conduit connecting the pre-cleaning process module and the pre-cleaning control module allows for a longer distance between the pre-cleaning process module and the pre-cleaning control module while shielding multiple power cables and multiple control cables from external interference and interference with each other.

[0011] Figure 1 shows a schematic plan view of a cluster tool assembly 100 for processing substrates. The cluster tool assembly 100 includes one or more pre-cleaning process modules 106a, 106b and one or more pre-cleaning control modules 112a, 112b. The pre-cleaning process modules 106a, 106b are coupled to the outer surface of the transfer chamber 102. A plurality of process chambers 104a to 104d are further coupled to the outer surface of the transfer chamber 102. In the embodiment of Figure 1, there are two pre-cleaning process modules 106a, 106b and four process chambers 104a to 104d. One or more load lock chambers 110 are disposed between the transfer chamber 102 and the front-end factory interface (FI) 108. A single load lock chamber 110 is disposed between the transfer chamber 102 and the front-end FI 108 in Figure 1. The substrate is passed through the load lock chamber 110 when it is transferred from the front end FI108 to the transfer chamber 102, and then from the transfer chamber 102 back to the front end FI108.

[0012] The load lock chamber 110 is connected to a vacuum pump (not shown), such as a roughing pump, whose output is connected to an exhaust duct (not shown), and the pressure inside the load lock chamber 110 is approximately 10 -3 The pressure is reduced to near-atmospheric pressure, approximately Toll. The load lock chamber 110 may be connected to a vacuum pump dedicated to the load lock chamber 110, or to a vacuum pump shared with one or more components in the cluster tool assembly 100, or to a house exhaust other than a vacuum pump, in order to reduce the pressure inside it. In each case, valves are provided on both ends of the load lock chamber 110.

[0013] A first valve 111 is positioned between the load lock chamber 110 and the front end FI 108. A second valve 113 is positioned between the load lock chamber 110 and the transfer chamber 102. The first valve 111 allows a seal to be formed between the front end FI 108 and the load lock chamber 110 while the load lock chamber 110 is depressurized. The first valve 111 further allows the second valve 113 to open and repeat the same process, preventing the transfer chamber 102 from being exposed to atmospheric or ambient pressure conditions while substrate is being transferred from the load lock chamber 110 to the transfer chamber 102, or from the transfer chamber 102 to the load lock chamber 110. The second valve 113 allows a seal to be formed between the transfer chamber 102 and the load lock chamber 110 while the load lock chamber 110 is pressurized or in fluid communication with the front end FI 108. The second valve 113 prevents the transfer chamber 102 from being exposed to atmospheric or ambient pressure conditions while the first valve 111 is open and the substrate is being transferred from the load lock chamber 110 to the front end FI 108, or from the front end FI 108 to the load lock chamber 110.

[0014] The transfer chamber 102 is configured to transfer one or more substrates between the load lock chamber 110, the pre-cleaning process modules 106a, 106b, and the process chambers 104a-104d, respectively. As shown herein, the transfer chamber 102 includes seven side walls such that the transfer chamber 102 has a heptagonal cross-sectional profile. Alternatively, the transfer chamber 102 may have a pentagonal, or nonagonal, or eleven-sided cross-sectional profile to allow additional process chambers to be coupled to the transfer chamber 102. The side walls of the transfer chamber 102 to which the load lock chamber 110 is attached have reduced thickness compared to the side walls to which any of the process chambers 104a-104d or the pre-cleaning process modules 106a, 106b are attached. The transfer chamber 102 may include a transfer robot 203 or a carousel (not shown) for moving substrates within it. The transfer robot or carousel has one or more blades (not shown) for holding the substrate and is operated around the central axis (not shown) of the transfer chamber 102. The transfer volume within the transfer chamber 102 is approximately 10 -3 The substrate is held in a vacuum during processing, at a level similar to or less than Toll.

[0015] Each of the process chambers 104a to 104d is coupled to the outer surface of the transfer chamber 102. The process chambers 104a to 104d can be four process chambers 104a to 104d, and thus there are a first process chamber 104a, a second process chamber 104b, a third process chamber 104c, and a fourth process chamber 104d. However, more or fewer process chambers are also conceivable. Each of the plurality of process chambers 104a to 104d can be a deposition chamber, such as an epitaxial deposition chamber or other types of deposition chambers. In some embodiments, the process chambers 104a to 104d include at least one of atomic layer deposition (ALD) chambers, chemical vapor deposition (CVD) chambers, or physical vapor deposition (PVD) chambers. Each of the process chambers 104a to 104d is disposed on a wall adjacent to at least one additional process chamber 104a to 104d.

[0016] In the embodiment shown in Figure 1, the load lock chamber 110 is coupled to the first wall of the transfer chamber 102. The first pre-cleaning process module 106a is coupled to the second wall of the transfer chamber 102. The first process chamber 104a is coupled to the third wall of the transfer chamber 102. The second process chamber 104b is coupled to the fourth wall of the transfer chamber 102. The third process chamber 104c is coupled to the fifth wall of the transfer chamber 102. The fourth process chamber 104d is coupled to the sixth wall of the transfer chamber 102. The second pre-cleaning process module 106b is coupled to the seventh wall of the transfer chamber 102.

[0017] The walls of the transfer chamber 102 to which the first pre-cleaning process module 106a and the second pre-cleaning process module 106b are coupled are narrower than the walls of the transfer chamber 102 to which the process chambers 104a to 104d are coupled. Therefore, the second and seventh walls of the transfer chamber 102 are narrower than each of the third, fourth, fifth, or sixth walls. Also, the walls of the transfer chamber 102 to which the load lock chamber 110 is coupled are narrower than the walls of the transfer chamber 102 to which the process chambers 104a and 104d are coupled. Therefore, the first wall of the transfer chamber 102 is narrower than each of the third, fourth, fifth, or sixth walls. Having one or each of the first, second, and third walls shorter reduces the overall footprint of the cluster tool assembly 100, but reduces the space between the pre-cleaning process modules 106a and 106b of the cluster tool assembly 100 and other components.

[0018] The load lock chamber 110 is located on the first wall between the first pre-cleaning process module 106a and the second pre-cleaning process module 106b. The first pre-cleaning process module 106a is located on the second wall between the load lock chamber 110 and the first process chamber 104a. The second pre-cleaning process module 106b is located on the seventh wall between the load lock chamber 110 and the fourth process chamber 104d. The first process chamber 104a is located on the third wall between the first pre-cleaning process module 106a and the second process chamber 104b. The second process chamber 104b is located on the fourth wall between the first process chamber 104a and the third process chamber 104c. The third process chamber 104c is located on the fifth wall between the second process chamber 104b and the fourth process chamber 104d. The fourth process chamber 104d is located on the sixth wall between the third process chamber 104c and the second pre-cleaning process module 106b.

[0019] The first pre-cleaning control module 112a is disposed adjacent to the first process chamber 104a. In some embodiments, the first pre-cleaning control module 112a is coupled to the first process chamber 104a. The second pre-cleaning control module 112b is disposed adjacent to the fourth process chamber 104d. In some embodiments, the second pre-cleaning control module 112b is coupled to the fourth process chamber 104d.

[0020] Each of the pre-cleaning process modules 106a, 106b is configured to perform a pre-cleaning process on one or more substrates disposed therein. The pre-cleaning process may include a plasma etching process. The pre-cleaning process modules 106a, 106b are disposed on both sides of the load lock chamber 110. Thus, the first pre-cleaning process module 106a is disposed on one side of the load lock chamber 110, and the second pre-cleaning process module 106b is disposed on the side of the load lock chamber 110 opposite to the first pre-cleaning process module 106a. The pre-cleaning process modules 106a, 106b are coupled to the side of the transfer chamber 102 and are configured to be in fluid communication with the transfer volume in the transfer chamber 102. Each of the pre-cleaning process modules 106a, 106b is coupled to the pre-cleaning control modules 112a, 112b by one or more cable conduits 114a, 114b. The first pre-cleaning process module 106a is coupled to the first pre-cleaning control module 112a by the first cable conduit 114a. The second pre-cleaning process module 106b is coupled to the second pre-cleaning control module 112b by the second cable conduit 114b.

[0021] Each of the pre-cleaning process modules 106a, 106b includes a manometer 116a, 116b, an insulating port 118a, 118b, and a throttle valve 120a, 120b that extend from the outward-facing surfaces 115a, 115b of the pre-cleaning process modules 106a, 106b. Accordingly, the first manometer 116a, the first insulating port 118a, and the first throttle valve 120a extend from the outward-facing surface 115a of the first pre-cleaning process module 106a. The second manometer 116b, the second insulating port 118b, and the second throttle valve 120b extend from the outward-facing surface 115b of the second pre-cleaning process module 106b. Each of the manometers 116a, 116b, the insulating ports 118a, 118b, and the throttle valves 120a, 120b extends from a single side of each pre-cleaning process module 106a, 106b to enable improved access to each of the manometers 116a, 116b, the insulating ports 118a, 118b, and the throttle valves 120a, 120b.

[0022] The mainframe power supply 122 is disposed adjacent to the front end FI108 and the load lock chamber 110. The mainframe power supply 122 can be configured to supply alternating current (AC) power to the cluster tool assembly 100, such as the transfer chamber 102, the load lock chamber 110, and the front end FI108. The mainframe power supply 122 can further provide power to the process chambers 104a - 104d and / or the pre-cleaning process modules 106a, 106b. The mainframe power supply 122 can be coupled to the side of the load lock chamber 110 and / or the front end FI108.

[0023] Figure 2 shows a schematic front isometric view of the first pre-cleaning process module 106a. The second pre-cleaning module 106b is similar to the first pre-cleaning module 106a. The first pre-cleaning process module 106a includes a pre-cleaning chamber 204, a gas panel 202, a plurality of supports 210a, 210b, 212c, 212, a manometer 116a, an insulating port 118a, and a throttle valve 120a. The pre-cleaning chamber 204 includes a lid 206, a body 205, a hinge assembly 208 connecting the lid 206 and the pre-cleaning chamber 204, and a pedestal actuator 222. The pre-cleaning chamber 204 is positioned above the gas panel 202. The gas panel 202 includes a purge gas panel 220 and a process gas panel 218.

[0024] The gas panel 202 is positioned below the pre-cleaning chamber 204 to reduce the footprint of the first pre-cleaning process module 106a. The purge gas panel 220 is configured to supply purge gas to the pre-cleaning chamber 204 and may include one or more purge gas sources and a purge gas pump. The process gas panel 218 is configured to supply process gas to the pre-cleaning chamber 204 and may include one or more process gas sources, a process gas pump, and / or valves. Each of the purge gas panel 220 and the process gas panel 218 can be accessed through a first door 221 and a second door 219, respectively. The first door 221 and the second door 219 are located on the outer wall of the first pre-cleaning process module 106a.

[0025] Each of the multiple supports 210a, 210b, 210c, and 212 is positioned between the upper surface 224 of the gas panel 202 and the bottom surface 226 of the main body 205 of the pre-cleaning chamber 204. The multiple supports 210a, 210b, 210c, and 212 include a first support 210a, a second support 210b, a third support 210c, and a removable fourth support 212. Each of the first support 210a, the second support 210b, the third support 210c, and the removable fourth support 212 is positioned at the corners of the gas panel 202 to support the pre-cleaning chamber 204 and separate the pre-cleaning chamber 204 from the gas panel 202. The removable fourth support 212 is configured to be removed when the first pre-cleaning process module 106a is installed on the cluster tool assembly 100 by coupling the first pre-cleaning process module 106a to the transfer chamber 102. Removing the removable fourth support 212 opens the lower side of the pre-cleaning chamber 204 and provides a maintenance passage. The second support 210b may include one or more branches for supporting the pedestal actuator 222 and / or a portion of the exhaust line 214. Each of the supports 210a, 210b, 210c, and 212 may alternatively be referred to as a leg or spacer.

[0026] The hinge assembly 208 is configured to allow the lid 206 to be actuated against the body 205 of the pre-cleaning chamber 204. The lid 206 further includes a handle 216. The handle 216 is located on the side of the lid 206 opposite the connection to the hinge assembly 208. The handle 216 is located on the same side of the pre-cleaning chamber 204 as the manometer 116a, the insulating port 118a, and the throttle valve 120a. Thus, the lid 206 is configured to open away from the outward-facing surface 115a toward the transfer chamber 102. Thus, maintenance can be performed on each of the manometer 116a, the insulating port 118a, the throttle valve 120a, and the pre-cleaning chamber 204 from the same side.

[0027] The manometer 116a is configured to measure the temperature inside the pre-cleaning chamber 204. In some embodiments, the manometer 116a measures two or more pressures inside the pre-cleaning chamber 204. The isolation port 118a is configured to control the exhaust rate inside the pre-cleaning chamber 204 and can control the flow of exhaust from the pre-cleaning chamber 204 to the exhaust line 214. The isolation port 118a may also be used to check the vacuum inside the pre-cleaning chamber 204 and determine whether any leaks are present therein.

[0028] The throttle valve 120a is configured to control the flow of gas to the pre-cleaning chamber 204. The throttle valve 120a can control either or both the process gas and / or the purge gas. The process gas may include a carrier gas or a reactive gas, such as one or a combination of He, Ne, Ar, Kr, Xe, N2, H2, NH3, NF3, Cl2, HCl, HF, HBr, C2F6, CF4, C3F8, CHF3, CH2F2, C4F8, or SF6. The second pre-cleaning process module 106b is similar to the first pre-cleaning process module 106a.

[0029] Figure 3A shows a schematic front isometric view of the first pre-cleaning control module 112a. The first pre-cleaning control module 112a and the second pre-cleaning control module 112b are similar. The first pre-cleaning control module 112a is configured to control the first pre-cleaning process module 106a. The first pre-cleaning control module 112a includes one or more power supplies 308, 310 and a controller 306. The controller 306 is configured to control the process processing of the pre-cleaning chamber 204.

[0030] The controller 306 is configured to supply commands to the pre-cleaning chamber 204 and the power supplies 308 and 310. The controller 306 also receives input from sensors in the first pre-cleaning process module 106a. For example, the controller 306 may be configured to control various gas flows via the gas panel 202 to facilitate gas and plasma flows in the first pre-cleaning process module 106a and to coordinate the operation of the power supplies 308 and 310. The controller 306 may also be configured to control all aspects of heating and operation of the pedestal actuator 222 in the pre-cleaning chamber 204.

[0031] The controller 306 includes a programmable central processing unit (CPU) that can operate with memory and mass storage devices, as well as a power supply, clock, cache, input / output (I / O) circuitry, coupled to various components of the pre-cleaning chamber 204 to facilitate control of the substrate process, an input control unit, and a display unit (not shown). The controller 306 also includes hardware or software for monitoring the substrate process through sensors in the pre-cleaning chamber 204, including sensors that monitor flow, RF power, electric field, etc. Other sensors that measure system parameters such as substrate temperature and chamber atmosphere pressure may also provide information to the controller 306.

[0032] To facilitate control of the pre-cleaning chamber 204 and associated plasma and field formation processes, the CPU may be one of any form of general-purpose computer processor that can be used in an industrial environment, such as a programmable logic controller (PLC), for controlling various chambers and subprocessors. Memory is coupled to the CPU and may be one or more of readily available memories, such as non-temporary random-access memory (RAM), read-only memory (ROM), floppy disk drives, hard disks, or any other form of local or remote digital storage. Support circuitry is coupled to the CPU to support the processor in a conventional manner. Plasma and field formation and other processes are generally stored in memory, typically as software routines. Software routines may also be stored and / or executed by a second CPU located remotely from the hardware controlled by the CPU.

[0033] The memory is in the form of a computer-readable storage medium containing instructions that, when executed by the CPU, facilitate the operation of the pre-cleaning chamber 204. The instructions in the memory are in the form of a program product, such as a program that implements the method of this disclosure. The program code may conform to one of several different programming languages. In one example, this disclosure may be implemented as a program product stored on a computer-readable storage medium for use with a computer system. One or more programs in the program product define the functionality of the embodiments (including the method described herein).

[0034] In some embodiments, the program (one or more) embodies machine learning capabilities. Various data features include process parameters such as processing time, temperature, pressure, voltage, polarity, output, gas nuclide, and precursor flow rate. Relationships between features are identified and defined to enable analysis by the machine learning algorithm to take in data and adapt the process being performed by the pre-cleaning chamber 204. The machine learning algorithm may employ supervised or unsupervised learning techniques. Examples of machine learning algorithms embodied by the program include, but are not limited to, linear regression, logistic regression, decision trees, state vector machines, neural networks, Naive Bayes, k-nearest neighbors, K-means, random forests, dimensionality reduction algorithms, and gradient boosting algorithms. In one example, the machine learning algorithm is used to modulate RF power and precursor gas flow to form a plasma and then facilitate the cleaning of a substrate placed in the pre-cleaning chamber 204.

[0035] Exemplary computer-readable storage media include, but are not limited to, (i) non-writable storage media on which information is stored permanently (e.g., read-only memory devices in a computer such as a CD-ROM disk readable by a CD-ROM drive, flash memory, ROM chips, or any type of solid-state non-volatile semiconductor memory), and (ii) writable storage media on which modifiable information is stored (e.g., floppy disks in a diskette drive or hard disk drive, or any type of solid-state random-access semiconductor memory). Such computer-readable storage media are embodiments of the present disclosure when they store computer-readable instructions that direct the function of the methods described herein. In some embodiments, the controller 306 is an etherCAT controller.

[0036] Each of the one or more power supplies 308, 310 is either an alternating current (AC) power supply or a direct current (DC) power supply. In some embodiments, the one or more power supplies 308, 310 are two or more power supplies 308, 310. The one or more power supplies 308, 310 include a first power supply 308 and a second power supply 310. The first power supply 308 is a DC power supply and is configured to supply DC power to the first pre-cleaning process module 106a. The second power supply 310 is an AC power supply and is configured to supply AC power to the first pre-cleaning process module 106a. The combined first power supply 308 and second power supply 310 are used to supply power to various elements within the first pre-cleaning process module 106a. The first power supply 308 can supply power to one or more of the following: the gas panel 202, a heater (not shown) in the pre-cleaning chamber 204, the pedestal actuator 222, the manometer 116a, the isolation port 118a, or the throttle valve 120a. In some embodiments, the first power supply 308 supplies power to each of the gas panel 202, the heater in the pre-cleaning chamber 204, the pedestal actuator 222, the manometer 116a, the isolation port 118a, and the throttle valve 120a. The second power supply 310 is configured to supply power to one or more of the following: a heater (not shown) in the pre-cleaning chamber 204, a remote plasma source (RPS) 422 (Figure 4), or a sensor in the pre-cleaning chamber 204.

[0037] First power supply 308 The second power supply 310 and the controller 306 are each housed within the casing 302. The casing 302 is housed within the casing 302. 308 The tower is configured to hold the second power supply 310 and the controller 306, respectively. The casing 302 is a metal or metal alloy container and may include multiple compartments and / or shelves for holding different electrical components. In some embodiments, the first power supply 308 Each of the controllers 306 is located on the upper shelf 311, and the second power supply 310 is located on the lower shelf 313 below the upper shelf 311.

[0038] Power cables 312 and 314 are connected to the first power supply. 308 and proceed from each of the second power supplies 310. Power cables 312, 314 are configured to transfer power to the components of the first pre-cleaning process module 106a. Power cables 312, 314 run from inside the casing 302, through the first cable conduit 114a, to the first pre-cleaning process module 106a. One or more signal cables 315 extend from the controller 306 to the first pre-cleaning process module 106a. One or more signal cables 315 are configured to transmit signals from the controller 306 to the first pre-cleaning process module 106a and / or transmit signals from one or more components of the first pre-cleaning process module 106a to the controller 306. One or more signal cables 315 extend from the controller 306, through the first cable conduit 114a, to the first pre-cleaning process module 106a. The first cable conduit 114a serves to shield each of the power cables 312, 314 and one or more signal cables 315 from one another.

[0039] The first cable conduit 114a includes an outer body 304. The outer body 304 is made of metal or a metal alloy and encloses each of the power cables 312, 314 and one or more signal cables 315. The outer body 304 prevents crosstalk or interference from external electrical lines or power sources and, in one example, may act as a Faraday shield. Thus, the outer body 304 works to shield each of the power cables 312, 314 and one or more signal cables 315. The outer body 304 further works to protect each of the power cables 312, 314 and one or more signal cables 315 from tampering or damage and organizes the power cables 312, 314 and one or more signal cables 315. The outer body 304 is segmented so that the outer body 304 can be bent or molded. The outer body 304 includes at least a first portion 328 and a second portion 330. The first portion 328 and the second portion 330 are connected at a joint 326. The first portion 328 extends from the outer surface of the casing 302. The distal end of the first portion 328, furthest from the casing 302, is connected to the second portion 330 at the joint 326. Additional portions may also be utilized and connected at different joints. The orientation of the outer body 304 wall between the first portion 328 and the second portion 330 is different such that the second portion 330 extends in a different direction than the first portion 328.

[0040] As shown in Figure 3B, the casing 302 includes several passages 320, 322, and 324 disposed therein. Each of the passages 320, 322, and 324 is configured to hold one or more cables, such as power cables 312 and 314 and one or more signal cables 315. In the embodiments described herein, the first passage 320 is configured so that the first power cable 312 is routed through the first passage 320. The second passage 322 is configured so that the second power cable 314 is routed through the second passage 322. The third passage 324 is configured so that one or more signal cables 315 are routed through the third passage 324. Each of the passages 320, 322, and 324 is separated from each other by one or more walls 316, 318. The first passage 320 is separated from the second passage 322 by the first wall 316. The second passage 322 is separated from the third passage 324 by a second wall 318. Walls 316 and 318 are configured to shield the electromagnetic fields of cables 312, 314, and 315 from each other. Wall 316 is made of metal or a metal alloy and prevents noise caused by the proximity of cables 312, 314, and 315.

[0041] In some embodiments, the walls 316, 318 and the outer body 304 are formed from a polymer, such as a plastic material. In embodiments where the first cable conduit 114a is formed from a polymer, each of the cables 312, 314, and 315 is separated by a greater linear distance than in embodiments where their cables are arranged within the first cable conduit 114a of metal or a metal alloy.

[0042] The first cable conduit 114a has a length L greater than approximately 400 mm, such as greater than approximately 450 mm, greater than approximately 500 mm, between approximately 500 mm and approximately 750 mm, between approximately 550 mm and approximately 750 mm, etc. Length L is the straight length and extends along the long axis of the first cable conduit 114a. The long axis is in the direction in which the first passage 320, the second passage 322, and the third passage 324 extend. The length L of the first cable conduit 114a limits the distance between the first pre-cleaning control module 112a and the first pre-cleaning process module 106a. The first cable conduit 114a and the second cable conduit 114b are similar.

[0043] Figure 4 shows a schematic front isometric view of the pre-cleaning chamber 204 with an open lid 206. The pre-cleaning chamber 204 includes a substrate support pedestal 424 and a plate stack 414, the plate stack 414 configured to deliver gas or plasma to a process volume 418 between the plate stack 414 and the substrate support pedestal 424. The substrate support pedestal 424 is actuated upward and downward within the process volume 418 by a pedestal actuator 222. A substrate is placed on the substrate support pedestal 424 and configured to be cleaned in the pre-cleaning chamber 204.

[0044] The lid 206 is positioned in the open position so that it acts around the hinge assembly 208 away from the outward-facing surface 115a. The hinge assembly 208 includes a hinge 408 coupled between the body 205 of the pre-cleaning chamber 204 and the lid 206. The hinge 408 acts as a swivel point or pivot point for the lid 206 so that the axis of rotation of the lid 206 passes through the hinge 408. The hinge assembly 208 further includes an extendable piston 404 coupled to the lid 206 at a first connection point 406 and coupled to the body 205 at a second connection point 402. The extendable piston 404 may alternatively be a spring. The extendable piston 404 is configured to prevent the lid 206 from passing a predetermined angle while in the open position, while allowing the lid 206 to act around the hinge 408. This helps prevent accidental damage to lid 206 while it is open for maintenance.

[0045] The lid 206 includes a plate stack 414 disposed therein, as well as an RPS 422. The RPS 422 is configured to deliver plasma to the plate stack 414 during processing. The plate stack 414 includes one or more showerheads, diffusers, and / or ion blocker plates. The plate stack 414 includes a plurality of openings formed through the bottom showerheads to allow gas and plasma within the plate stack 414 to enter the process volume 418. The RPS 422 is configured to supply plasma to the plate stack 414, such as cleaning plasma. In some embodiments, the RPS 422 is replaced with a preferred inductively coupled plasma system or a capacitively coupled plasma system.

[0046] The process volume 418 is formed using one or more side walls 416, the bottom surface of the plate stack 414, and the substrate support pedestal 424. A substrate transfer passage 420 is provided through one of the side walls 416 of the process volume 418 to an inward-facing surface 428. The substrate transfer passage 420 is configured to allow substrates to pass through the substrate transfer passage 420 so that they are transferred from the process volume 418 to the transfer chamber 102, or from the transfer chamber 102 to the process volume 418. The inward-facing surface 428 is provided on the side of the body 205 opposite the outward-facing surface 115a.

[0047] Side 430 is positioned between the inward-facing surface 428 and the outward-facing surface 115a. Extendable pistons 404 can be coupled to each of the side 430 such that a first extendable piston 404 extends from one side 430 to the lid 206, and a second extendable piston 404 extends from the opposite side 430 to the lid 206.

[0048] The first insulated port 118a may further include an exhaust coupling 426. The exhaust coupling 426 is configured to be attached to the exhaust line 214 so that gas and / or plasma are exhausted from the process volume 418 through the exhaust coupling 426.

[0049] Figure 5A shows a schematic plan view of a portion of the cluster tool assembly 100 and the maintenance passage 502. The maintenance passage 502 is an open passage through a portion of the cluster tool assembly 100. The maintenance passage 502 is located between at least portions of the first and second pre-cleaning control modules 112a, 112b, the front end FI 108, the pre-cleaning process modules 106a, 106b, the mainframe power supply 122, the load lock chamber 110, and the transfer chamber 102. The maintenance passage 502 provides access to each of the portions of the pre-cleaning control modules 112a, 112b, the pre-cleaning process modules 106a, 106b, the mainframe power supply 122, the load lock chamber 110, and the transfer chamber 102. In one example, the maintenance passage 502 provides robot or carousel access to the transfer chamber 102 from below.

[0050] Therefore, the maintenance passage 502 is located between a portion of the pre-cleaning process modules 106a, 106b and the pre-cleaning control modules 112a, 112b. The maintenance passage 502 is further located between a portion of the pre-cleaning control modules 112a, 112b and the front end FI 108, such that a first inlet 504a to the maintenance passage 502 is located between the first pre-cleaning control module 112a and the front end FI 108. A second inlet 504b to the maintenance passage 502 is located between the second pre-cleaning control module 112b and the front end FI 108. The first width D1 of the first inlet 504a and the second inlet 504b is greater than approximately 400 mm, such as approximately 500 mm to approximately 750 mm, such as approximately 500 mm to approximately 650 mm, such as approximately 500 mm to approximately 650 mm. The first width D1 of the first inlet 504a is the smallest opening point between the outer surface of one of the pre-wash control modules 112a, 112b and the outer surface of the front end FI108, such that the first width D1 is the smallest straight-line distance between one of the pre-wash control modules 112a, 112b and the front end FI108.

[0051] A portion of the maintenance passage 502 passes over the cable conduits 114a and 114b, under the pre-cleaning process modules 106a and 106b, over the mainframe power supply 122, and over the load lock chamber 110. The portion of the maintenance passage 502 located over the load lock chamber 110 provides access to the first wall on the outer perimeter of the transfer chamber 102. The second width D2 is the width of the maintenance passage 502 at its narrowest point. The second width D2 is located between a portion of one of the pre-cleaning process modules 106a and 106b and the front end FI 108. The second width D2 is the straight-line distance between a portion of one of the pre-cleaning process modules 106a and 106b and the front end FI 108. The second width D2 is greater than approximately 500mm, such as approximately 500mm to approximately 700mm, such as approximately 500mm to approximately 625mm, and greater than approximately 400mm.

[0052] Figure 5B shows a schematic side isometric view of the maintenance passage 502 between the first pre-cleaning process module 106a and the first pre-cleaning control module 112a. Each of the pre-cleaning control modules 112a and 112b has a first height D3 greater than approximately 1000 mm, such as greater than approximately 1100 mm, approximately 1100 mm to approximately 1500 mm, approximately 1100 mm to approximately 1300 mm, etc. The first height D3 is the height in the z direction from the floor of the manufacturing equipment to the top surface of the pre-cleaning control modules 112a and 112b. The first height D3 of the pre-cleaning control modules 112a and 112b reduces the ability to perform maintenance by reaching across the pre-cleaning control modules 112a and 112b. The height of the front end FI 108 is the same as or greater than that of the pre-cleaning control modules 112a and 112b.

[0053] The gas panel 202 has a second height D4. The second height D4 is approximately 300mm to 450mm, approximately 300mm to 400mm, approximately 350mm to 400mm, approximately 250mm to 500mm, etc. The second height D4 is the height in the z direction from the floor of the manufacturing equipment to the top surface 224 of the gas panel 202. The second height D4 is configured to allow technicians or other personnel to access components located above the top surface 224 of the gas panel 202, as well as each of the purge gas panel 220 and the process gas panel 218.

[0054] The mainframe power supply 122 has a third height D5. The third height D5 is approximately 300mm to 450mm, approximately 300mm to 400mm, approximately 350mm to 400mm, approximately 250mm to 500mm, etc. The third height D5 is the height in the z direction from the floor of the manufacturing equipment to the top surface of the mainframe power supply 122. The third height D5 allows technicians or other personnel to access the mainframe power supply 122 while still having horizontal clearance for movement through the maintenance passage 502.

[0055] The maintenance passage 502 has a fourth height D6. The fourth height D6 is approximately 400mm to 675mm, such as approximately 450mm to 625mm, approximately 475mm to 615mm, etc. The fourth height D6 is the height in the z direction from the top surface 224 of the gas panel 202 to the bottom surface 226 of the main body 205 of the pre-cleaning chamber 204. The fourth height D6 is the height of the smallest opening through which an individual passes through the maintenance passage 502, such that there is a gap of the fourth height D6 when an individual passes through the entire maintenance passage 502.

[0056] The fourth height D6 and the second width D2 form a vertical plane through which the maintenance passage 502 passes. The vertical plane is approximately 300,000 mm 2 Larger than that, approximately 250,000 mm 2 The smallest passage cross-section through the maintenance passage 502 has a larger area than the vertical plane. In some embodiments, the vertical plane is approximately 300,000 mm 2~approximately 325,000 mm 2 etc., approximately 250,000 mm 2 ~approximately 325,000 mm 2 It has the area of.

[0057] The cross-sectional area through the maintenance passage 502 is large enough to allow technicians or other personnel to pass through the maintenance passage 502 and perform maintenance on any of the pre-cleaning control modules 112a, 112b, pre-cleaning process modules 106a, 106b, mainframe power supply 122, load lock chamber 110, and / or transfer chamber 102. The formation of a single maintenance passage 502 helps reduce the overall footprint of the cluster tool assembly 100 and improves the ease of performing maintenance on the cluster tool assembly 100. The separation of the pre-cleaning control modules 112a, 112b from the pre-cleaning process modules 106a, 106b to separate towers allows the space around the pre-cleaning process modules 106a, 106b to be unobstructed. The cable conduits 114a and 114b connect the pre-cleaning process modules 106a and 106b to the pre-cleaning control modules 112a and 112b, allowing for the separation of the pre-cleaning control modules 112a and 112b from the pre-cleaning process modules 106a and 106b while shielding the power and signal cables in the cable conduits 114a and 114b from interference.

[0058] The gas panel 202 is positioned below each of the pre-cleaning process modules 106a and 106b and is accessible from outward-facing surfaces 115a and 115b. Similarly, each of the manometers 116a and 116b, the isolation ports 118a and 118b, and the throttle valves 120a and 120b extends from the outward-facing opposing surfaces 115a and 115b of each of the pre-cleaning process modules 106a and 106b, allowing improved access to each of the manometers 116a and 116b, the isolation ports 118a and 118b, and the throttle valves 120a and 120b. Each of the doors of the gas panel 202, the manometers 116a and 116b, the isolation ports 118a and 118b, and the throttle valves 120a and 120b are accessible from the same side, thus allowing for reduced clearances on the other sides of the pre-cleaning process modules 106a and 106b.

[0059] The foregoing applies to embodiments of the present disclosure, but other and further embodiments of the present disclosure may be devised without departing from its basic scope, the scope of which is determined by the following claims.

Claims

1. A substrate processing apparatus suitable for use in semiconductor manufacturing, wherein the apparatus is Transfer chamber and A factory interface coupled to the first side surface of the transfer chamber, A plurality of process chambers coupled to a plurality of second sides of the transfer chamber, A pre-cleaning process module coupled to a third side of the transfer chamber between the factory interface and at least one of the plurality of process chambers, wherein the pre-cleaning process module comprises a pre-cleaning chamber and a gas panel disposed below the pre-cleaning chamber, and the pre-cleaning process module is disposed in the space surrounded by the transfer chamber, the factory interface and the pre-cleaning control module. A pre-cleaning control module, which is disposed separately from the pre-cleaning process module, adjacent to one of the plurality of process chambers, and at a predetermined distance from the factory interface, wherein the pre-cleaning control module comprises a power supply and a controller, A cable conduit is disposed between the pre-cleaning process module and the pre-cleaning control module. Equipped with, Device.

2. The apparatus according to claim 1, wherein the cable conduit is configured to hold one or more electrical cables and one or more control cables therein.

3. The apparatus according to claim 2, wherein the cable conduit comprises a plurality of shielded compartments, the plurality of shielded compartments configured such that one or more electrical cables pass through shielded compartments different from the one or more control cables.

4. The apparatus according to claim 2, wherein the cable conduit comprises metal, a metal alloy, or a polymer.

5. The apparatus according to claim 1, wherein the pre-cleaning chamber further comprises a remote plasma source, a substrate support pedestal, and a plate stack configured to deliver gas or plasma to the substrate support pedestal.

6. The apparatus according to claim 1, wherein the pre-cleaning chamber is coupled to the transfer chamber on its inward-facing side and further comprises a lid having a pivot axis adjacent to the transfer chamber, so that the lid rotates toward the transfer chamber when opened.

7. The apparatus according to claim 6, wherein each of the insulating port, manometer, and throttle valve extends from the outward-facing side of the pre-cleaning chamber opposite the inward-facing side of the pre-cleaning chamber.

8. The apparatus according to claim 1, wherein the gas panel further comprises a purge gas panel and a process gas panel.

9. The apparatus according to claim 1, wherein an access passage is provided between the pre-cleaning process module and the factory interface, and the access passage has a width greater than 400 mm.

10. A pre-cleaning assembly suitable for use in semiconductor manufacturing, wherein the pre-cleaning assembly is A pre-cleaning process module, A pre-cleaning chamber comprising a lid, a substrate support pedestal, and a plate stack, wherein the lid is rotatable about a rotation axis, A gas panel is provided below the aforementioned pre-cleaning chamber, An insulating port is provided on the first side surface of the pre-cleaning process module and extends in a first direction, A manometer disposed on the first side surface and extending in the first direction A pre-cleaning process module comprising, A pre-cleaning control module, which is disposed separately from the aforementioned pre-cleaning process module, Power supply and Controller and A pre-cleaning control module equipped with, A cable conduit disposed between the side adjacent to the first side of the pre-cleaning process module and the pre-cleaning control module, wherein the cable conduit has a length greater than 400 mm. A pre-cleaning assembly comprising:

11. The pre-cleaning assembly according to claim 10, wherein the lid rotates away from the first side when opened.

12. The pre-cleaning assembly according to claim 10, wherein the cable conduit is configured to hold one or more electrical cables and one or more control cables therein.

13. The pre-cleaning assembly according to claim 12, wherein the cable conduit comprises a plurality of shielded compartments such that one or more electrical cables pass through shielded compartments separate from the one or more control cables.

14. The pre-cleaning assembly according to claim 12, wherein the cable conduit is made of metal or a metal alloy.

15. The pre-cleaning assembly according to claim 10, further comprising a remote plasma source configured to supply plasma to a process volume formed between the lid and the substrate support pedestal.

16. The pre-cleaning assembly according to claim 10, wherein a plurality of supports are disposed between the pre-cleaning chamber and the gas panel.

17. The pre-cleaning assembly according to claim 16, wherein one of the plurality of supports is a removable leg disposed between the pre-cleaning chamber and the gas panel.

18. A substrate processing apparatus suitable for use in semiconductor manufacturing, wherein the apparatus is Transfer chamber and A factory interface coupled to the first side surface of the transfer chamber, Four process chambers coupled to the transfer chamber, A first pre-cleaning process module coupled to a second side of the transfer chamber between the factory interface and a first process chamber among the process chambers, wherein the first pre-cleaning process module comprises a pre-cleaning chamber and a gas panel disposed below the pre-cleaning chamber, the pre-cleaning chamber is coupled to the transfer chamber, and further comprises a lid having a pivot axis adjacent to the transfer chamber, so that when the lid is opened, it rotates toward the transfer chamber, and the first pre-cleaning process module is disposed in the space surrounded by the transfer chamber, the factory interface and the first pre-cleaning control module. A first pre-cleaning control module is disposed separately from the first pre-cleaning process module and adjacent to the first process chamber among the process chambers, with a predetermined distance from the factory interface, wherein the first pre-cleaning control module comprises a power supply and a controller configured to control the pre-cleaning process within the pre-cleaning chamber. Displaced between the first pre-cleaning process module and the first pre-cleaning control module, a first cable conduit configured to hold one or more electrical cables and one or more control cables, and A device equipped with the following features.

19. The apparatus according to claim 18, further comprising: a second pre-cleaning process module coupled to the seventh side of the transfer chamber between the factory interface and the fourth process chamber of the process chamber; and a second pre-cleaning control module separate from the second pre-cleaning process module and adjacent to the fourth process chamber of the process chamber.

20. The apparatus according to claim 18, wherein the distance between the first pre-cleaning control module and the factory interface is greater than 500 mm.

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