Thinner composition, and method for producing semiconductor devices using said thinner composition

Abstract

The present invention provides a thinner composition comprising a solvent (B) that contains a compound (B1) given by general formula (b-1). (In formula (b-1), R1 represents an alkyl group having from 1 to 10 carbons.)　The present invention also provides a method for producing semiconductor devices, said method comprising a step of coating the thinner composition on a substrate prior to coating the substrate with a photoresist film material or a photoresist underlayer film material.

Description

Thinner composition and method for manufacturing semiconductor device using the thinner composition

[0001] The present invention relates to a thinner composition and a method for manufacturing a semiconductor device using the thinner composition, and in particular to a thinner composition for removing a photoresist film or a photoresist underlayer film.

[0002] In the manufacture of semiconductor devices and liquid crystal devices, microfabrication using lithography with photoresist materials is performed. The lithography process involves coating a wafer with a photosensitive resin composition, transferring a designed pattern, and then etching the wafer to create a fine circuit pattern, similar to that of a semiconductor integrated circuit. This process involves coating, exposing, developing, etching, and peeling to create the desired fine circuit pattern. In particular, in the manufacture of semiconductor devices, the recent trend toward higher integration and higher speeds of LSIs has led to a demand for even finer pattern dimensions. To accommodate this trend, the wavelength of lithography light sources used in resist pattern formation has been shortened from KrF excimer lasers (248 nm) to ArF excimer lasers (193 nm) and extreme ultraviolet (EUV) light sources (13.5 nm), making them more susceptible to contamination. Therefore, residues and contaminants of photoresist, BARC, SOC, and SOG applied to a substrate during a coating process can become a source of contamination during an exposure process and therefore need to be removed in advance. In this case, a thinner composition has been used in an EBR (edge ​​bead removing) process.

[0003] Recently, with the use of photoresists and their underlayers using short-wavelength light sources, the impact of the amount of photoresist and its underlayer on the manufacturing cost of integrated circuits has become significant. Therefore, there is a need to reduce the amount of photoresist and its underlayer used to reduce costs. To this end, a reducing resist consumption (RRC) process has been adopted, in which a pre-wetting process is performed in which a thinner composition is applied to the substrate surface to wet it before applying the photoresist and its underlayer, thereby allowing the photoresist to be applied uniformly over the entire substrate surface even with only a small amount of photoresist and its underlayer.

[0004] Although various thinner compositions have been developed for use in EBR and RRC processes, no thinner composition capable of achieving these processes at a high level has been developed.

[0005] JP 2001-188359 A JP 2005-227770 A JP 2015-232708 A

[0006] As described above, there is a demand for the development of thinner compositions used in manufacturing various devices through EBR processes, RRC processes, etc., which can be fully applied to the EBR processes for a wide variety of photoresists and their underlying films, and which have high RRC efficiency in order to reduce manufacturing costs.

[0007] As a result of intensive research aimed at solving the above-mentioned problems, the present inventors have found that the above-mentioned problems can be solved by a thinner composition containing a solvent containing a compound having a specific structure. That is, the present invention is as follows: [1] A thinner composition containing a solvent (B) containing a compound (B1) represented by the following general formula (b-1): [In the above formula (b-1), R １ is an alkyl group having 1 to 10 carbon atoms.] [2] R in the general formula (b-1) １ is a methyl group, an ethyl group, an n-propyl group, an i-propyl group, an n-butyl group, an i-butyl group, an s-butyl group, or a t-butyl group. １is an ethyl group, an n-propyl group, an i-propyl group, an n-butyl group, an i-butyl group, an s-butyl group, or a t-butyl group. [4] The thinner composition according to any of [1] to [3] above, wherein the solvent (B) contains a solvent (B2) other than the compound (B1). [5] The thinner composition according to [4] above, wherein the solvent (B) contains, as the solvent (B2), one or more selected from the group consisting of methyl α-methoxyisobutyrate, methyl α-formyloxyisobutyrate, methyl α-acetyloxyisobutyrate, and methyl 3-hydroxyisobutyrate. [6] The thinner composition according to [4] or [5] above, wherein the solvent (B2) accounts for less than 100% by mass of the total amount (100% by mass) of the thinner composition. [7] The thinner composition according to [4] or [5] above, wherein the solvent (B2) is contained in an amount of 100 mass% or less, based on the total amount (100 mass%) of the compound (B1). [8] The thinner composition according to [4] or [5] above, wherein the solvent (B2) is contained in an amount of less than 112.5 mass% based on the total amount (100 mass%) of the compound (B1). [9] The thinner composition according to any one of [4] to [8] above, wherein the solvent (B2) is contained in an amount of 0.0001 mass% or more, based on the total amount (100 mass%) of the compound (B1).

[10] A method for manufacturing a semiconductor device, comprising the step of applying the thinner composition according to any one of [1] to [9] above onto a substrate before applying a photoresist film material or a photoresist underlayer film material to the substrate.

[11] A method for manufacturing a semiconductor device, comprising the steps of: applying a photoresist film material or a photoresist underlayer film material to a substrate, and then applying the thinner composition described in any one of [1] to [9] above to the substrate before an exposure step.

[12] A method for manufacturing a semiconductor device, comprising the steps of: forming a photoresist film or a photoresist underlayer film on a substrate; and removing the photoresist film or photoresist underlayer film using the thinner composition described in any one of [1] to [9] above.

[13] The method for manufacturing a semiconductor device according to

[12] above, further comprising the steps of: contacting the thinner composition with the edge and / or backside of the substrate on which the photoresist film or photoresist underlayer film is formed; removing the photoresist film or photoresist underlayer film;

[14] The method for manufacturing a semiconductor device according to

[13] above, further comprising spraying the thinner composition onto the edge and / or backside of the substrate while rotating the substrate on which the photoresist film or photoresist underlayer film is formed;

[15] The method for manufacturing a semiconductor device according to any of

[12] to

[14] above, further comprising the steps of drying the thinner composition remaining on the substrate after the step of removing the photoresist film or photoresist underlayer film;

[16] The method for manufacturing a semiconductor device according to any of

[12] to

[15] above, further comprising the steps of soft-baking the photoresist film, partially exposing the soft-baked photoresist film using a mask, and developing the exposed photoresist film with a developer to form a photoresist pattern.

[17] The method for manufacturing a semiconductor device according to any one of the above items

[12] to

[16] , further comprising the step of removing the photoresist film or photoresist underlayer film from the edge and / or back surface of the substrate after forming the photoresist film or photoresist underlayer film on the substrate, when the photoresist film or photoresist underlayer film is formed on the edge and / or back surface of the substrate.

[18] A solvent composition comprising a compound (B1) represented by the following general formula (b-1), and a solvent (B2) other than the compound (B1): [In the above formula (b-1), R １is an alkyl group having 1 to 10 carbon atoms.]

[19] The solvent composition according to

[18] above, wherein the solvent (B) contains, as the solvent (B2), one or more selected from the group consisting of methyl α-methoxyisobutyrate, methyl α-formyloxyisobutyrate, methyl α-acetyloxyisobutyrate, and methyl 3-hydroxyisobutyrate.

[20] The solvent composition according to

[18] or

[19] above, wherein the solvent (B2) contains less than 112.5 mass% of the compound (B1), based on the total amount (100 mass%) of the compound (B1).

[21] The solvent composition according to any of

[18] to

[20] above, wherein the solvent (B2) contains 0.0001 mass% or more of the compound (B1), based on the total amount (100 mass%) of the compound (B1).

[22] A pre-wet liquid containing the thinner composition according to any of [1] to [9] above.

[23] An edge bead removing liquid containing the thinner composition according to any of [1] to [9] above.

[24] A rework liquid containing the thinner composition according to any one of [1] to [9] above.

[0008] The thinner composition of a preferred embodiment of the present invention can be used for substrate treatment suitable for the manufacture of various devices (particularly semiconductor devices), and for removing photoresists and underlying films.

[0009] Figure 1 is a photograph showing the results of a rework performance evaluation using the thinner composition of Example A5-1a. Figure 2 is a photograph showing the results of a rework performance evaluation using the thinner composition of Comparative Example A5-1b.

[0010] [Thinner Composition] The thinner composition of the present invention contains a solvent (B) (hereinafter also referred to as "component (B)") containing a compound (B1) represented by general formula (b-1).

[0011] <Component (B): Solvent> A thinner composition according to one embodiment of the present invention contains a solvent (B) containing a compound (B1) represented by the following general formula (b-1): The compound (B1) may be used alone or in combination of two or more types.

[0012]

[0013] In the above formula (b-1), R １is an alkyl group having 1 to 10 carbon atoms. The alkyl group may be a linear alkyl group or a branched alkyl group. １ Examples of the alkyl group that can be selected as the alkyl group include a methyl group, an ethyl group, an n-propyl group, an i-propyl group, an n-butyl group, an i-butyl group, an s-butyl group, a t-butyl group, a pentyl group, a hexyl group, a heptyl group, an octyl group, a 2-ethylhexyl group, a nonyl group, and a decyl group.

[0014] Among these, in one embodiment of the present invention, R in the general formula (b-1) １ is preferably a methyl group, an ethyl group, an n-propyl group, an i-propyl group, an n-butyl group, an i-butyl group, a s-butyl group, or a t-butyl group, more preferably an ethyl group, an n-propyl group, an i-propyl group, an n-butyl group, an i-butyl group, a s-butyl group, or a t-butyl group, even more preferably an n-propyl group, an i-propyl group, an n-butyl group, an i-butyl group, a s-butyl group, or a t-butyl group, and still more preferably an i-propyl group, an n-butyl group, or an i-butyl group.

[0015] The thinner composition of one embodiment of the present invention may contain a solvent (B2) other than the compound (B1) as component (B). Examples of the solvent (B2) include lactones such as γ-butyrolactone; ketones such as acetone, methyl ethyl ketone, cyclohexanone, methyl-n-pentyl ketone, methyl isopentyl ketone, and 2-heptanone; polyhydric alcohols such as ethylene glycol, diethylene glycol, propylene glycol, and dipropylene glycol; compounds having an ester bond such as ethylene glycol monoacetate, diethylene glycol monoacetate, propylene glycol monoacetate, and dipropylene glycol monoacetate; compounds having an ether bond such as monoalkyl ethers or monophenyl ethers of the polyhydric alcohols or the compounds having an ester bond, such as monomethyl ether, monoethyl ether, monopropyl ether, and monobutyl ether; Examples of the solvent (B2) include cyclic ethers such as dioxane, esters other than the compound (B1) such as methyl lactate, ethyl lactate, methyl acetate, ethyl acetate, butyl acetate, methyl pyruvate, ethyl pyruvate, methyl α-methoxyisobutyrate, methyl β-methoxyisobutyrate, ethyl 2-ethoxyisobutyrate, methyl methoxypropionate, ethyl ethoxypropionate, methyl α-formyloxyisobutyrate, and methyl β-formyloxyisobutyrate, aromatic organic solvents such as anisole, ethyl benzyl ether, cresyl methyl ether, diphenyl ether, dibenzyl ether, phenetole, butylphenyl ether, ethylbenzene, diethylbenzene, pentylbenzene, isopropylbenzene, toluene, xylene, cymene, and mesitylene, and dimethyl sulfoxide (DMSO). These solvents (B2) may be used alone or in combination of two or more.

[0016] However, from the viewpoint of simultaneously achieving not only the EBR process but also the RRC process, the content of compound (B1) in component (B) in the thinner composition of the present invention is preferably 20 to 100 mass%, more preferably 30 to 100 mass%, even more preferably 50 to 100 mass%, still more preferably 60 to 100 mass%, and particularly preferably 70 to 100 mass%, relative to the total amount (100 mass%) of component (B) contained in the thinner composition.

[0017] In one embodiment of the present invention, component (B) used contains, as solvent (B2), one or more selected from the group consisting of methyl α-methoxyisobutyrate, methyl α-formyloxyisobutyrate, methyl α-acetyloxyisobutyrate, and methyl 3-hydroxyisobutyrate, which is preferable from the viewpoints of excellent acid generator solubility, EBR performance and rework performance, excellent in-plane uniformity of the coating film obtained when used as a prewet liquid, and improved production yield of semiconductor devices. The inclusion of methyl α-methoxyisobutyrate is preferable from the viewpoint of resin solubility, i.e., removability. The inclusion of methyl α-formyloxyisobutyrate or methyl α-acetyloxyisobutyrate is preferable from the viewpoints of excellent resin solubility, EBR performance and rework performance, and a small contact angle and RRC performance. The inclusion of methyl 3-hydroxyisobutyrate is preferable from the viewpoint of a small contact angle and RRC performance. The method for mixing methyl α-methoxyisobutyrate, methyl α-formyloxyisobutyrate, methyl α-acetyloxyisobutyrate, or methyl 3-hydroxyisobutyrate is not particularly limited, and the compound can be incorporated by either adding methyl α-methoxyisobutyrate, methyl α-formyloxyisobutyrate, methyl α-acetyloxyisobutyrate, or methyl 3-hydroxyisobutyrate to compound (B1), or by producing it as a by-product or mixing it in during the production process of compound (B1).

[0018] The content of the solvent (B2) is not limited, but is preferably less than 112.5% ​​by mass, based on the total amount (100% by mass) of the compound (B1), from the viewpoint of improving productivity by shortening the drying time of the thinner composition. It is preferably less than 100% by mass, and 70% by mass or less. From the viewpoint of enhancing the dissolving power of the solvent while ensuring a suitable drying time, it is more preferably 60% by mass or less, 50% by mass or less, 40% by mass or less, 30% by mass or less, 20% by mass or less, 10% by mass or less, 5% by mass or less, 1% by mass or less, more preferably 0.1% by mass or less, and particularly preferably 0.01% by mass or less. From the viewpoint of excellent in-plane uniformity of the coating film obtained when used as a pre-wet liquid and improving the production yield of semiconductor devices, it is preferably 0.0001% by mass or more, more preferably 0.001% by mass or more, and even more preferably 0.01% by mass or more. On the other hand, from the viewpoint of applicability under high temperature conditions, it is preferably more than 125% by mass, based on the total amount (100% by mass) of the compound (B1).

[0019] The content of methyl α-methoxyisobutyrate, methyl α-formyloxyisobutyrate, methyl α-acetyloxyisobutyrate, or methyl 3-hydroxyisobutyrate is not particularly limited, but is preferably less than 100% by mass, more preferably 70% by mass or less, 60% by mass or less, 50% by mass or less, 40% by mass or less, 30% by mass or less, 20% by mass or less, 10% by mass or less, 5% by mass or less, 1% by mass or less, even more preferably 0.1% by mass or less, and particularly preferably 0.01% by mass or less, based on the total amount (100% by mass) of the thinner composition, from the viewpoint of improving productivity by shortening the drying time of the thinner composition. From the viewpoint of excellent in-plane uniformity of the coating film obtained when used as a prewet liquid and improving the production yield of semiconductor devices, the content is preferably 0.0001% by mass or more, more preferably 0.001% by mass or more, and even more preferably 0.01% by mass or more.

[0020] The content of methyl α-methoxyisobutyrate, methyl α-formyloxyisobutyrate, methyl α-acetyloxyisobutyrate, or methyl 3-hydroxyisobutyrate is less than 112.5% ​​by mass, preferably 100% by mass or less, more preferably 70% by mass or less, 60% by mass or less, 50% by mass or less, 40% by mass or less, 30% by mass or less, 20% by mass or less, 10% by mass or less, 5% by mass or less, 1% by mass or less, even more preferably 0.1% by mass or less, and particularly preferably 0.01% by mass or less, based on the total amount (100% by mass) of compound (B1), from the viewpoint of improving productivity by shortening the drying time of the thinner composition. When used as a prewet liquid, the content is preferably 0.0001% by mass or more, more preferably 0.001% by mass or more, and even more preferably 0.01% by mass or more, from the viewpoint of excellent in-plane uniformity of the coating film obtained and improving the production yield of semiconductor devices. On the other hand, from the viewpoint of applicability under high temperature conditions, the compound (B1) is preferably contained in an amount of more than 125% by mass based on the total amount (100% by mass) of the compound (B1).

[0021] In one embodiment of the present invention, component (B) used also preferably includes, as solvent (B2), one or more selected from the group consisting of methyl α-formyloxyisobutyrate, methyl α-acetyloxyisobutyrate, and methyl 3-hydroxyisobutyrate.

[0022] In the thinner composition of the present invention, the content of component (B) is appropriately set depending on the application, but can be 50% by mass or more, 54% by mass or more, 58% by mass or more, 60% by mass or more, 65% by mass or more, 69% by mass or more, 74% by mass or more, 77% by mass or more, 80% by mass or more, 82% by mass or more, 84% by mass or more, 88% by mass or more, 90% by mass or more, 94% by mass or more, or 97% by mass or more, based on the total amount (100% by mass) of the thinner composition. The upper limit of the content of component (B) is appropriately set, but can be 99% by mass or less, 98% by mass or less, 96% by mass or less, 93% by mass or less, 91% by mass or less, 86% by mass or less, 81% by mass or less, 76% by mass or less, 71% by mass or less, 66% by mass or less, or 61% by mass or less, based on the total amount (100% by mass) of the thinner composition. The content of component (B) can be determined in any combination by appropriately selecting from the above-mentioned upper and lower limit values.

[0023] The thinner composition of the present invention may contain other components in addition to the component (B) described above, depending on the intended use. Examples of such other components include one or more selected from surfactants and antioxidants. The content of each of these other components is appropriately selected depending on the type of component, but is preferably 0.000000001 to 1 part by mass, more preferably 0.000001 to 0.1 part by mass, and even more preferably 0.00001 to 0.001 part by mass per part by mass of component (B) contained in the thinner composition.

[0024] The surfactant used in one embodiment of the present invention may be any surfactant known in the art, without any particular limitation. Preferred surfactants include ethylene glycol methyl ether, ethylene glycol dimethyl ether, ethylene glycol ethyl ether, ethylene glycol methyl ethyl ether, ethylene glycol diethyl ether, diethylene glycol methyl ether, diethylene glycol dimethyl ether, diethylene glycol ethyl ether, diethylene glycol methyl ethyl ether, diethylene glycol diethyl ether, diethylene glycol propyl ether, diethylene glycol methyl propyl ether, diethylene glycol ethyl propyl ether, and diethylene glycol dipropyl ether. These surfactants may be used alone or in combination of two or more.

[0025] The antioxidant used in one embodiment of the present invention can be any antioxidant known in the art, and examples thereof include tocopherol-based antioxidants, phenol-based antioxidants, hindered amine-based antioxidants, phosphorus-based antioxidants, sulfur-based antioxidants, benzotriazole-based antioxidants, benzophenone-based antioxidants, hydroxylamine-based antioxidants, salicylic acid ester-based antioxidants, and triazine-based antioxidants.

[0026] Tocopherol-based antioxidants: Tocopherol-based compounds are generally vitamin E and are naturally occurring chemical substances. Therefore, they are highly safe and have a low environmental impact. Furthermore, because they are oil-soluble and liquid at room temperature, they are highly compatible with thinner compositions and have excellent resistance to precipitation.

[0027] Examples of tocopherol compounds include tocopherol and its derivatives, and tocotrienol and its derivatives. Tocopherols and tocotrienols are known to be classified into natural compounds (d-forms), non-natural compounds (l-forms), and racemic mixtures (dl-forms) which are equal mixtures of these compounds. Natural compounds (d-forms) and racemic compounds (dl-forms) are preferred because some of them are used as food additives, etc.

[0028] Specific examples of tocopherols include d-α-tocopherol, dl-α-tocopherol, d-β-tocopherol, dl-β-tocopherol, d-γ-tocopherol, dl-γ-tocopherol, d-δ-tocopherol, and dl-δ-tocopherol.Specific examples of tocotrienols include d-α-tocotrienol, dl-α-tocotrienol, d-β-tocotrienol, dl-β-tocotrienol, d-γ-tocotrienol, dl-γ-tocotrienol, d-δ-tocotrienol, and dl-δ-tocotrienol.

[0029] Specific examples of tocopherol derivatives include acetate esters, nicotinate esters, linoleate esters, succinate esters, etc. of the above-mentioned tocopherols.Specific examples of tocotrienol derivatives include acetate esters, etc. of the above-mentioned tocotrienols.

[0030] Phenol-Based Antioxidants Examples of the phenol-based antioxidants include hindered phenol-based antioxidants. Examples of hindered phenol antioxidants include 2,4-bis[(laurylthio)methyl]-o-cresol, 1,3,5-tris(3,5-di-t-butyl-4-hydroxybenzyl), 1,3,5-tris(4-t-butyl-3-hydroxy-2,6-dimethylbenzyl), 2,4-bis-(n-octylthio)-6-(4-hydroxy-3,5-di-t-butylanilino)-1,3,5-triazine, pentaerythritol tetrakis[3-(3,5-di-tert-butyl-4-hydroxyphenyl)propionate], 2,6-di-t-butyl-4-nonylphenol, 2,2'-isobutylidene-bis-(4,6-dimethyl-phenol), 4,4'-butylidene-bis-(2-t-butyl-5-methylphenol), 2,2 4-(1-methyl-cyclohexyl)-phenol, N,N-hexamethylenebis(3,5-di-t-butyl-4-hydroxy-hydrocinnamamide), 4,4'-butylidenebis(6-t-butyl-3-methylphenol), 2,2'-methylenebis(4-ethyl-6-t-butylphenol), and butylhydroxyanisole. In addition, oligomer-type and polymer-type compounds having a hindered phenol structure can also be used. In addition to the above-mentioned hindered phenol-based antioxidants, examples of the phenol-based antioxidant include dibutylhydroxytoluene (BHT) and hydroquinone.

[0031] Hindered amine antioxidants Examples of hindered amine antioxidants include bis(2,2,6,6-tetramethyl-4-piperidyl)sebacate, bis(N-methyl-2,2,6,6-tetramethyl-4-piperidyl)sebacate, N,N'-bis(2,2,6,6-tetramethyl-4-piperidyl)-1,6-hexamethylenediamine, 2-methyl-2-(2,2,6,6-tetramethyl-4-piperidyl)amino-N-(2,2,6,6-tetramethyl-4-piperidyl)propionamide, tetrakis(2,2,6,6-tetramethyl-4-piperidyl)(1,2,3,4-butanetetracarboxylate), poly[{6-(1,1,3,3-tetramethylbutyl)imino-1,3,5-triazine-2,4-diyl}{ (2,2,6,6-tetramethyl-4-piperidyl)imino}hexamethyl{(2,2,6,6-tetramethyl-4-piperidyl)imino}], poly[(6-morpholino-1,3,5-triazine-2,4-diyl){(2,2,6,6-tetramethyl-4-piperidyl)imino}hexamethine{(2,2,6,6-tetramethyl-4-piperidyl)imino}], polycondensation product of dimethyl succinate and 1-(2-hydroxyethyl)-4-hydroxy-2,2,6,6-tetramethylpiperidine, and N,N'-4,7-tetrakis[4,6-bis{N-butyl-N-(1,2,2,6,6-pentamethyl-4-piperidyl)amino}-1,3,5-triazine-2- [yl]-4,7-diazadecane-1,10-diamine, etc. In addition, oligomer type and polymer type compounds having a hindered amine structure can also be used.

[0032] ・Phosphorus-based antioxidants Examples of phosphorus-based antioxidants include tris(isodecyl)phosphite, tris(tridecyl)phosphite, phenyl isooctyl phosphite, phenyl isodecyl phosphite, phenyl di(tridecyl)phosphite, diphenyl isooctyl phosphite, diphenyl isodecyl phosphite, diphenyl tridecyl phosphite, triphenyl phosphite, tris(nonylphenyl)phosphite, 4,4'-isopropylidenediphenol alkyl phosphite, trisnonylphenyl phosphite, tris(2,4-di-t-butylphenyl)phosphite, tris(biphenyl)phosphite, distearyl pentaerythritol diphosphite, di(2,4-di-t-butylphenyl)pentaerythritol diphosphite, di(nonylphenyl)pentaerythritol diphosphite, and phenyl bisphenol A. Examples of suitable phosphite include pentaerythritol diphosphite, tetratridecyl 4,4'-butylidenebis(3-methyl-6-t-butylphenol) diphosphite, hexatridecyl 1,1,3-tris(2-methyl-4-hydroxy-5-t-butylphenyl)butane triphosphite, 3,5-di-t-butyl-4-hydroxybenzyl phosphite diethyl ester, sodium bis(4-t-butylphenyl)phosphite, sodium 2,2-methylene-bis(4,6-di-t-butylphenyl)phosphite, 1,3-bis(diphenoxyphosphonyloxy)benzene, tris(2-ethylhexyl)phosphite, triisodecyl phosphite, and ethyl bis(2,4-ditert-butyl-6-methylphenyl)phosphite. Additionally, oligomer and polymer compounds having a phosphite structure can also be used.

[0033] Sulfur-based antioxidants include 2,2-thio-diethylenebis[3-(3,5-di-t-butyl-4-hydroxyphenyl)propionate], 2,4-bis[(octylthio)methyl]-o-cresol, 2,4-bis[(laurylthio)methyl]-o-cresol, didodecyl 3,3'-thiodipropionate, dioctadecyl 3,3'-thiodipropionate, and ditetradecyl 3,3'-thiodipropionate. In addition, oligomeric and polymeric compounds having a thioether structure can also be used.

[0034] Benzotriazole-Based Antioxidants As the benzotriazole-based antioxidants, oligomer-type and polymer-type compounds having a benzotriazole structure can be used.

[0035] Benzophenone-Based Antioxidants Examples of benzophenone-based antioxidants include 2-hydroxy-4-methoxybenzophenone, 2,4-dihydroxybenzophenone, 2-hydroxy-4-n-octoxybenzophenone, 4-dodecyloxy-2-hydroxybenzophenone, 2-hydroxy-4-octadecyloxybenzophenone, 2,2'-dihydroxy-4-methoxybenzophenone, 2,2'-dihydroxy-4,4'-dimethoxybenzophenone, 2,2',4,4'-tetrahydroxybenzophenone, 2-hydroxy-4-methoxy-5-sulfobenzophenone, 2-hydroxy-4-methoxy-2'-carboxybenzophenone, and 2-hydroxy-4-chlorobenzophenone. In addition, oligomeric and polymeric compounds having a benzophenone structure can also be used.

[0036] Hydroxylamine-Based Antioxidants Examples of hydroxylamine-based antioxidants include hydroxylamine, hydroxylamine nitrate, hydroxylamine sulfate, hydroxylamine phosphate, hydroxylamine hydrochloride, hydroxylamine citrate, and hydroxylamine oxalate.

[0037] Salicylate ester antioxidants include phenyl salicylate, p-octylphenyl salicylate, p-tert-butylphenyl salicylate, etc. In addition, oligomer and polymer compounds having a salicylate structure can also be used.

[0038] Triazine-based antioxidants include 2,4-bis(allyl)-6-(2-hydroxyphenyl)1,3,5-triazine, etc. In addition, oligomer and polymer compounds having a triazine structure can also be used.

[0039] The thinner composition of the present invention has excellent solubility in a variety of photoresist films, photoresist underlayer films (films coated on the underlayer of a photoresist, such as bottom antireflective coating (BARC) and spin-on carbon film), and photoresist overlayer films (top antireflective coating (TARC)), and can improve not only the EBR characteristics, rework characteristics, and coating performance of photoresist films, photoresist underlayer films, and photoresist overlayer films, but also excellent RRC characteristics. In particular, in the case of photoresists for g-line, i-line, KrF, ArF, EUV, or EB, the basic structures of the constituent photoresists are different, so it is necessary to adjust the content of the organic solvent in the composition to improve the solubility and coatability of all of these, and the thinner composition of the present invention satisfies this requirement.

[0040] <Method for manufacturing a semiconductor device> One embodiment of the present invention is a method for manufacturing a semiconductor device using the thinner composition of the present invention. More specifically, one embodiment of the present invention is a method for manufacturing a semiconductor device, comprising a step of applying the thinner composition of the present invention to a substrate before applying a photoresist film material, a photoresist overlayer film material, or a photoresist underlayer film material to the substrate. Another embodiment of the present invention is a method for manufacturing a semiconductor device, comprising a step of applying the thinner composition of the present invention to the substrate after applying a photoresist film material or a photoresist underlayer film material to the substrate and before an exposure step.

[0041] Another embodiment of the present invention is a method for manufacturing a semiconductor device, comprising the steps of forming a photoresist film or a photoresist underlayer film on a substrate and removing the photoresist film or the photoresist underlayer film using the thinner composition of the present invention. In this embodiment, the thinner composition is preferably brought into contact with the edge and / or backside of the substrate on which the photoresist film or the photoresist underlayer film is formed, thereby removing the photoresist film or the photoresist underlayer film. In another embodiment, the thinner composition is preferably sprayed onto the edge and / or backside of the substrate while rotating the substrate on which the photoresist film or the photoresist underlayer film is formed, thereby removing the photoresist film or the photoresist underlayer film.

[0042]

[0023] Also preferred is an embodiment further comprising a step of drying the thinner composition remaining on the substrate after the step of removing the photoresist film or photoresist underlayer film. Also preferred is an embodiment further comprising a step of soft-baking the photoresist film, a step of partially exposing the soft-baked photoresist film using a mask, and a step of developing the exposed photoresist film with a developer to form a photoresist pattern. Furthermore, when a photoresist film or photoresist underlayer film is formed on the edge and / or back surface of the substrate, also preferred is an embodiment further comprising a step of removing the photoresist film or photoresist underlayer film from the edge and / or back surface of the substrate after forming the photoresist film or photoresist underlayer film on the substrate.

[0043] By treating a substrate with the thinner composition and then coating the substrate with a photoresist or a photoresist underlayer film, it is possible to coat the substrate with a small amount of photoresist or a photoresist underlayer film, thereby improving process costs and productivity.

[0044] The method for manufacturing a semiconductor device of the present invention can include a step of treating the substrate with the thinner composition, applying a photoresist or a photoresist underlayer film, and further treating the substrate with the thinner composition before the exposure step.

[0045] In the above process, by further treating the substrate with a thinner composition, unnecessary photoresist or photoresist underlayer film applied to the peripheral portion or rear surface of the substrate can be quickly and effectively removed before the exposure process.

[0046] The present invention will be described below with reference to examples, but the present invention is not limited to these examples. The values ​​in the examples were measured using the following methods or devices.

[0047] (1) Content of structural units in resin The content of structural units in resin is １３ C-NMR (model "JNM-ECA500", manufactured by JEOL Ltd., 125 MHz) was used, using deuterated chloroform as a solvent. １３ Measurement was performed by integrating 1024 times in the quantitative mode of C.

[0048] (2) Weight-average molecular weight (Mw), number-average molecular weight (Mn), and molecular weight distribution (Mw / Mn) of resin The Mw and Mn of the resin were measured by gel permeation chromatography (GPC) under the following conditions using polystyrene as a standard substance: Apparatus: Hitachi LaChrom series Detector: RI detector L-2490 Column: Tosoh TSKgel GMHHR-M (2 columns) + guard column HHR-H Solvent: THF (containing stabilizer) Flow rate: 1 mL / min Column temperature: 40°C The ratio of Mw to Mn of the resin [Mw / Mn] was then calculated as the molecular weight distribution of the resin.

[0049] The solvents used in the following examples and comparative examples are as follows: <Component (B1)> HBM: methyl 2-hydroxyisobutyrate, in the general formula (b-1) above, R １ is a methyl group. iPHIB: isopropyl 2-hydroxyisobutyrate, a compound in which R １is an i-propyl group. iBHIB: isobutyl 2-hydroxyisobutyrate, a compound in which R １ is an i-butyl group. nBHIB: n-butyl 2-hydroxyisobutyrate, a compound in which R １ is an n-butyl group. <Component (B2)> PGMEA: propylene glycol monomethyl ether acetate

[0050] The resins used in the following examples and comparative examples are as follows:

[0051] Synthesis Examples 1 to 6 (Synthesis of Resins (i) to (vi)) (1) Raw Material Monomers The following raw material monomers were used in synthesizing Resins (i) to (vi). The structures of the raw material monomers are shown in Table 1. EADM: 2-ethyl-2-adamantyl methacrylate MADM: 2-methyl-2-adamantyl methacrylate NML: 2-methacryloyloxy-4-oxatricyclo[4.2.1.0] ３．７ ]nonan-5-one GBLM: α-methacryloyloxy-γ-butyrolactone HADM: 3-hydroxy-1-adamantyl methacrylate

[0052]

[0053] (2) Synthesis of Resins (i) to (vi) A total of 10 g of raw material monomers were mixed in a 300 mL round-bottom flask in the molar ratios shown in Table 2. 300 g of tetrahydrofuran (Wako Pure Chemical Industries, Ltd., special grade reagent, stabilizer-free) was added, followed by stirring and degassing for 30 minutes under a nitrogen stream. After degassing, 0.95 g of 2,2'-azobis(isobutyronitrile) (Tokyo Chemical Industry Co., Ltd., reagent) was added, and polymerization was carried out at 60°C under a nitrogen stream to obtain a resin of the desired molecular weight. After completion of the reaction, the reaction solution was cooled to room temperature (25°C) and added dropwise to a large excess of hexane to precipitate the polymer. The precipitated polymer was filtered off, and the resulting solid was washed with methanol and then dried under reduced pressure at 50°C for 24 hours to obtain the desired ArF resins (i) to (vi), respectively. For the resulting resins (i) to (vi), the content of each structural unit, as well as Mw, Mn, and Mw / Mn, were measured and calculated based on the above-mentioned measurement methods. These results are shown in Table 2.

[0054]

[0055] Resins (vii) to (viii) are as follows: Resin (vii): Cresol novolac resin (EP4080) (manufactured by Asahi Organic Chemicals Co., Ltd.) Resin (viii): Copolymer (Maruka Linker) having structural units of hydroxystyrene / t-butyl acrylate = 2 / 1 (molar ratio) (manufactured by Maruzen Petrochemical Co., Ltd.)

[0056] The acid generators used in the following examples and comparative examples are as follows: Acid generator (i): WPAG336 (manufactured by Fujifilm Wako Pure Chemical Industries, Ltd.) Acid generator (ii): WPAG367 (manufactured by Fujifilm Wako Pure Chemical Industries, Ltd.) Acid generator (iii): triphenylsulfonium nonafluorobutanesulfonate (manufactured by Sigma-Aldrich) Acid generator (iv): TPS-C1 (manufactured by Heraeus) Acid generator (v): TPS-N3 (manufactured by Heraeus) Acid generator (vi): DTBPIO-C1 (manufactured by Heraeus) Acid generator (vii): MDT (manufactured by Heraeus)

[0057] [Solubility Evaluation] Examples 1a to 17a, 1b to 13b, Comparative Examples 1a to 8a, 1b to 7b Using methyl 2-hydroxyisobutyrate (HBM), isopropyl 2-hydroxyisobutyrate (iPHIB), isobutyl 2-hydroxyisobutyrate (iBHIB), or n-butyl 2-hydroxyisobutyrate (nBHIB) as the solvent for the examples, and propylene glycol monomethyl ether acetate (PGMEA) as the solvent for the comparative examples, the solubility of resins (i) to (viii) and acid generators (i) to (vii) shown in Tables 3 to 6 was evaluated. Resins (i) to (viii) were added to the solvent so that the resin concentration was 15 wt %, and the state after stirring at room temperature for 24 hours was visually evaluated according to the following criteria. Evaluation A: Dissolved (clear solution confirmed by visual inspection) Evaluation C: Insoluble (cloudy solution confirmed by visual inspection) Acid generators (i) to (vii) were added to a solvent so that the acid generator concentration was 10 wt %, and the mixture was stirred at room temperature for 1 hour, after which the state was visually inspected and evaluated according to the following criteria: Evaluation A: Dissolved (clear solution confirmed by visual inspection) Evaluation C: Insoluble (cloudy solution confirmed by visual inspection) The results are shown in Tables 3 to 6.

[0058] When the thinner composition of the present invention was used, the solubility of the resins (i) to (viii) and the acid generators (i) to (vii) was excellent, and it was confirmed that the thinner composition is particularly useful as a thinner composition for EBR and rework applications. On the other hand, when the thinner composition of the comparative example was used, some of the resins (i) to (viii) and the acid generators (i) to (vii) were insoluble, and it was confirmed that the thinner composition is not useful as a thinner composition.

[0059] In this way, when a thinner composition satisfying the requirements of this embodiment is used, better solubility can be imparted compared to thinner compositions of comparative examples that do not satisfy these requirements. As long as the requirements of this embodiment are satisfied, thinner compositions other than those described in the examples also exhibit the same effect.

[0060] [Solubility Evaluation] The thinner compositions of Examples A1-1 to A1-4 and Comparative Example A1-1 were prepared using the solvents shown in Table 7. The thinner compositions of Examples A2-1a to A2-4 and Comparative Example A2-1 were prepared using the solvents shown in Table 8. These thinner compositions were then used to evaluate the solubility of the resins (i) to (v) and acid generators (i) to (iv) shown in Tables 7 and 8. <Solvents> HBM: methyl 2-hydroxyisobutyrate (manufactured by Mitsubishi Gas Chemical Company, Inc.) αMBM: methyl α-methoxyisobutyrate (synthesized with reference to US 2014 / 0275016) αFBM: methyl α-formyloxyisobutyrate (synthesized with reference to WO 2020 / 004467) αABM: methyl α-acetyloxyisobutyrate (synthesized with reference to WO 2020 / 004466) 3HBM: methyl 3-hydroxyisobutyrate (manufactured by Tokyo Chemical Industry Co., Ltd.) iPHIB: isopropyl 2-hydroxyisobutyrate (manufactured by Mitsubishi Gas Chemical Company, Inc.) <Resin> Resins having the following compositions (molecular weights) were synthesized by the method described above. (i) EADM / NML = 18 / 82 (Mn = 3750) (ii) MADM / NML = 25 / 75 (Mn = 2740) (iii) MADM / GBLM = 25 / 75 (Mn = 3770) (iv) MADM / NML / HADM = 42 / 33 / 25 (Mn = 7260) (v) Copolymer having structural units of hydroxystyrene / t-butyl acrylate / styrene = 3 / 1 / 1 (molar ratio) (manufactured by Maruzen Petrochemical Co., Ltd., Mw = 12,000) <Acid generator> (i) WPAG-336 (manufactured by Fujifilm Wako Pure Chemical Industries, Ltd.) (ii) WPAG-367 (manufactured by Fujifilm Wako Pure Chemical Industries, Ltd.) (iii) WPAG-145 (manufactured by Fujifilm Wako Pure Chemical Industries, Ltd.) (iv) Triphenylsulfonium Trifluoro-1-butanesulfonate (Sigma-Aldrich)

[0061] The type of resin shown in Table 7 was added to the thinner composition shown in Table 7 so that the resin concentration was 15 wt %, and the type of acid generator shown in Table 7 was added so that the acid generator concentration was 1 wt %. After stirring at room temperature for 24 hours, the state was visually evaluated according to the following criteria. Rating S: Dissolved (clear solution confirmed by visual observation) Rating A: Almost dissolved (almost clear solution confirmed by visual observation) Rating C: Insoluble (cloudy solution confirmed by visual observation)

[0062] A resin shown in Table 8 was added to a thinner composition shown in Table 8 so that the resin concentration was 40 wt %, and an acid generator of the type shown in Table 8 was added so that the acid generator concentration was a predetermined concentration. After stirring at room temperature for 1 hour, the state was visually evaluated according to the following criteria: Rating S: 5 wt % dissolved (clear solution confirmed by visual observation) Rating A: 1 wt % dissolved (clear solution confirmed by visual observation) Rating C: 1 wt % insoluble (cloudy solution confirmed by visual observation) The results are shown in Tables 7 and 8.

[0063] Table 7 shows that the thinner compositions prepared in Examples A1-1 to A1-4 have superior resin solubility compared to the thinner composition of Comparative Example A1-1. In particular, the thinner composition in which the solvent (B) contains αFBM as the solvent (B2) exhibits high solubility in any resin and is therefore suitable for use.

[0064] Table 8 shows that the thinner compositions prepared in Examples A2-1a to A2-4 have superior solubility for acid generators compared to the thinner composition of Comparative Example A2-1. In particular, thinner compositions in which the solvent (B) contains αMBM, αFBM, or 3HBM as the solvent (B2) exhibit high solubility for any acid generator and are therefore preferably used.

[0065] [Contact Angle Evaluation] (Preparation of Thinner Compositions) Thinner compositions were prepared to have the compositions shown in Table 9. A 34.0 wt % PGMEA / PGME solution (8 / 2 weight ratio) of a copolymer (manufactured by Maruzen Petrochemical Co., Ltd., Mw = 12,000) having structural units of hydroxystyrene / t-butyl acrylate / styrene = 3 / 1 / 1 (molar ratio) was prepared as a resist solution (500 ppm of a surfactant was added to the copolymer). Here, PGMEA is propylene glycol monomethyl ether acetate, and PGME is propylene glycol monomethyl ether. Then, in a constant temperature and humidity booth controlled at 23°C and 45% RH, 2 mL of each thinner composition prepared above was dropped onto a Si wafer and spin-coated at 1000 rpm for 3 seconds. The wafer was then moved to the stage of a contact angle meter, and a 10 μL droplet of the resist solution was placed on the center of the wafer using the tip of a Teflon syringe needle, and the contact angle after 1 second was evaluated. Contact angle: Evaluation A: Less than 10° Evaluation B: 10° or more and less than 17° Evaluation C: 17° or more

[0066]

[0067] As shown in Table 9, the thinner compositions prepared in Examples A3-1a to A3-4 have smaller contact angles than the thinner compositions of Comparative Examples A3-1a to A3-1b. Even small amounts of photoresist or its underlayer film alone can be uniformly applied to the entire substrate surface as a prewet liquid, making them suitable for use in the RRC process. In other words, when the thinner composition of the present invention is used as a prewet liquid, the contact angle decreases when a photoresist composition or its underlayer film composition is subsequently added. As a result, a smaller amount of photoresist composition or its underlayer film composition can be uniformly applied to the entire substrate surface (referred to as the RRC process). In particular, thinner compositions in which solvent (B) contains αFBM or 3HBM as solvent (B2) have a smaller contact angle and can be uniformly applied to the entire substrate surface even with a smaller amount of photoresist or its underlayer film alone, making them more suitable for use.

[0068] [Evaluation of In-Plane Uniformity] (Preparation of Thinner Compositions) Thinner compositions were prepared to have the compositions shown in Table 10. A 34.0 wt % solution of a copolymer (manufactured by Maruzen Petrochemical Co., Ltd., Mw = 12,000) having structural units of hydroxystyrene / t-butyl acrylate / styrene = 3 / 1 / 1 (molar ratio) in PGMEA / PGME = 8 / 2 (weight ratio) was prepared as a resist solution. Then, 1.1 mL of each thinner composition prepared above was dropped onto a Si wafer and spin-coated at 1000 rpm for 0.5 seconds. Subsequently, while starting the addition of 1.6 mL of the resist solution at a rate of 0.3 mL / sec, the wafer was spin-coated at 200 rpm for 2 seconds, 3000 rpm for 3 seconds, 200 rpm for 1 second, and 1200 rpm for 60 seconds, and the in-plane uniformity of the resulting resist film was evaluated. The in-plane uniformity was evaluated by measuring the film thickness at 3 mm intervals from the center of the wafer, excluding a 3 mm area at the edge, for a total of 25 points, and calculating the 3σ. In-plane uniformity: Grade A: Less than 2.0% Grade B: 2.0% or more and less than 2.5% Grade C: 2.5% or more

[0069]

[0070] As can be seen from Table 10, the thinner compositions prepared in Examples A4-1a to A4-5 can form good resist films with small in-plane uniformity and are suitable for use as pre-wet solutions in the RRC process. In particular, thinner compositions in which the solvent (B) contains αMBM, αFBM, αABM, or 3HBM as the solvent (B2) can form good resist films with even smaller in-plane uniformity and are therefore more suitable.

[0071] [Evaluation of Reworkability] The reworkability of photoresist films was tested using thinner compositions of Examples and Comparative Examples listed in Table 12 below. A photoresist of resin (ii) listed in Table 2 was applied to a 6-inch silicone substrate to a film thickness of 180 nm. The wafers that had undergone the soft baking process were reworked using each thinner composition according to the method listed in Table 11 below. The reworked silicone substrates were visually evaluated based on the following evaluation criteria. The results are shown in Table 12 below.

[0072] <Evaluation Criteria> A: No streaks of photoresist residue were observed. B: Streaks of photoresist residue were observed.

[0073]

[0074]

[0075] From the results in Table 12, it was confirmed that the thinner composition of the present invention has excellent rework performance. Therefore, the thinner composition of the present invention is useful as a rework liquid.

[0076] Photographs of the rework performance evaluations carried out using the thinner compositions of Example A5-1a and Comparative Example A5-1b are shown in FIGS. 1 and 2, respectively.

[0077] [Evaluation of EBR Properties] A photoresist of resin (ii) shown in Table 2 was applied to a 6-inch silicone substrate to a film thickness of 180 nm, and then an EBR (edge ​​bead removal) experiment was performed to remove unnecessary resist film from the edge portion using the thinner compositions of the Examples and Comparative Examples shown in Table 13 below. The thinner compositions of each Example and Comparative Example were released from the EBR nozzle at a flow rate of 0.5 mL / sec. The substrate rotation speed was set to 2000 rpm, and the release time of the thinner composition was set to 20 seconds. The removal performance of unnecessary photosensitive film was then evaluated using an optical microscope based on the following evaluation criteria, and the results are shown in Table 13 below.

[0078] <Evaluation criteria> A: The EBR line uniformity on the photosensitive film is consistent after EBR. B: The shape of the edge is distorted after EBR due to the dissolving action of thinner.

[0079]

[0080] From the results in Table 13, it was confirmed that the thinner composition of the present invention has excellent EBR performance. Therefore, the thinner composition of the present invention is useful as an edge bead removing liquid.

[0081] The thinner composition of the present invention has excellent solubility in a variety of photoresist films, photoresist underlayer films (films coated on the underlayer of a photoresist, such as bottom antireflective coating (BARC) or spin-on carbon film), and photoresist overlayer films (top antireflective coating (TARC)). This not only improves the EBR characteristics, rework characteristics, and coating performance of photoresist films, photoresist underlayer films, and photoresist overlayer films, but also provides excellent RRC characteristics. In particular, in the case of photoresists for g-line, i-line, KrF, ArF, EUV, or EB, the basic structures of the constituent photoresists are different, so that it is necessary to adjust the organic solvent content in the composition to improve the solubility and coating properties of all of these. The thinner composition of the present invention satisfies this requirement. As long as the requirements of this embodiment are met, the same effects can be achieved with thinner compositions other than those described in the examples.

Claims

1. A thinner composition containing a solvent (B) containing a compound (B1) represented by the following general formula (b-1). 【Chemical Formula 1】 [In the above formula (b-1), R １ is an alkyl group having 1 to 10 carbon atoms. ]

2. R in the general formula (b-1) １ is a methyl group, an ethyl group, an n-propyl group, an i-propyl group, an n-butyl group, an i-butyl group, an s-butyl group, or a t-butyl group, and the thinner composition according to claim 1.

3. R in the general formula (b-1) １ is an ethyl group, an n-propyl group, an i-propyl group, an n-butyl group, an i-butyl group, an s-butyl group, or a t-butyl group, and the thinner composition according to claim 1.

4. The thinner composition according to claim 1, wherein the solvent (B) contains a solvent (B2) other than the compound (B1).

5. The thinner composition according to claim 4, wherein the solvent (B) contains, as the solvent (B2), one or more selected from the group consisting of methyl α-methoxyisobutyrate, methyl α-formyloxyisobutyrate, methyl α-acyloxyisobutyrate, and methyl 3-hydroxyisobutyrate.

6. The thinner composition according to claim 4, wherein the solvent (B2) is contained in an amount of less than 100% by mass based on the total amount (100% by mass) of the thinner composition.

7. The thinner composition according to claim 4, wherein the solvent (B2) is contained in an amount of 100% by mass or less based on the total amount (100% by mass) of the compound (B1).

8. The thinner composition according to claim 4, wherein the solvent (B2) is contained in an amount of less than 112.5% by mass based on the total amount (100% by mass) of the compound (B1).

9. The thinner composition according to claim 4, wherein the solvent (B2) is contained in an amount of 0.0001% by mass or more based on the total amount (100% by mass) of the compound (B1).

10. A method for manufacturing a semiconductor device, comprising a step of applying the thinner composition according to any one of claims 1 to 9 onto a substrate before applying a photoresist film material or a photoresist underlayer film material onto the substrate.

11. A method for manufacturing a semiconductor device, comprising a step of applying the thinner composition according to any one of claims 1 to 9 onto a substrate after applying a photoresist film material or a photoresist underlayer film material onto the substrate and before an exposure step.

12. A step of forming a photoresist film or a photoresist underlayer film on a substrate; A method for manufacturing a semiconductor device, comprising a step of removing the photoresist film or the photoresist underlayer film using the thinner composition according to any one of claims 1 to 9.

13. The method for manufacturing a semiconductor device according to claim 12, wherein the thinner composition is brought into contact with an edge and / or a back surface of the substrate on which the photoresist film or the photoresist underlayer film is formed to remove the photoresist film or the photoresist underlayer film.

14. The method for manufacturing a semiconductor device according to claim 13, wherein the thinner composition is sprayed onto an edge and / or a back surface of the substrate while rotating the substrate on which the photoresist film or the photoresist underlayer film is formed to remove the photoresist film or the photoresist underlayer film.

15. The method for manufacturing a semiconductor device according to claim 12, further comprising a step of drying the thinner composition remaining on the substrate after the step of removing the photoresist film or the photoresist underlayer film.

16. A step of soft baking the photoresist film, a step of partially exposing the soft baked photoresist film using a mask, and a step of developing the exposed photoresist film with a developer to form a photoresist pattern, The method for manufacturing a semiconductor device according to claim 12, further comprising.

17. When a photoresist film or a photoresist underlayer film is formed on an edge and / or a back surface of the substrate, after forming the photoresist film or the photoresist underlayer film on the substrate, the edge and / or the back surface of the substrate The method for manufacturing a semiconductor device according to claim 12, further comprising a step of removing the photoresist film or the photoresist underlayer film.

18. A solvent composition containing a compound (B1) represented by the following general formula (b-1) and a solvent (B) containing a solvent (B2) other than the compound (B1). 【Chemical formula 2】 [In the above formula (b-1), R １ is an alkyl group having 1 to 10 carbon atoms. ]

19. The solvent composition according to claim 18, wherein the solvent (B) contains, as the solvent (B2), one or more selected from the group consisting of methyl α-methoxyisobutyrate, methyl α-formyloxyisobutyrate, methyl α-acyloxyisobutyrate, and methyl 3-hydroxyisobutyrate.

20. The solvent composition according to claim 18 or 19, wherein the solvent (B2) is contained in an amount of less than 112.5% by mass based on the total amount (100% by mass) of the compound (B1).

21. The solvent composition according to claim 18 or 19, wherein the solvent (B2) is contained in an amount of 0.0001% by mass or more based on the total amount (100% by mass) of the compound (B1).

22. A prewet liquid containing the thinner composition according to any one of claims 1 to 9.

23. An edge bead moving liquid containing the thinner composition according to any one of claims 1 to 9.

24. A rework liquid containing the thinner composition according to any one of claims 1 to 9.

Images