Semiconductor apparatus

Abstract

One aspect of the present invention provides a display device which has an imaging function. A light-emitting diode is produced on a first substrate, and then picked up and mounted to a second substrate. Further, the present invention achieves a display device in which: a light-receiving element is also picked up and mounted to the second substrate on which the light-emitting diode has been mounted; a plurality of light-emitting diodes are disposed so as to surround the light-receiving element; and a light-receiving region is provided in a gap between the light-emitting regions.

Description

Semiconductor Devices

[0001] One embodiment of the present invention relates to a semiconductor device and an electronic device.

[0002] Note that one embodiment of the present invention is not limited to the above technical field. Examples of the technical field of one embodiment of the present invention disclosed in this specification and the like include a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, an electronic device, a lighting device, an input device, an input / output device, a driving method thereof, or a manufacturing method thereof.

[0003] In this specification, a semiconductor device is a device that utilizes semiconductor characteristics, and refers to a circuit including a semiconductor element (transistor, diode, photodiode, etc.), a device having such a circuit, etc. It also refers to any device that can function by utilizing semiconductor characteristics. For example, an integrated circuit, a chip including an integrated circuit, and an electronic component that houses a chip in a package are examples of semiconductor devices. Furthermore, memory devices, display devices, light-emitting devices, lighting devices, electronic devices, etc. may themselves be semiconductor devices and may also include semiconductor devices.

[0004] In recent years, display devices have been required to have higher resolution in order to display high-resolution images. Furthermore, displays for information terminal devices such as smartphones, tablet terminals, and notebook PCs (personal computers) are required to have not only high resolution but also low power consumption. Furthermore, display devices that not only display images but also have various additional functions, such as a touch panel function or a function for capturing fingerprints for authentication, are in demand.

[0005] As a display device, for example, a light-emitting device having a light-emitting element has been developed. Light-emitting elements (also referred to as EL elements) utilizing the electroluminescence (hereinafter referred to as EL) phenomenon have features such as being easily thin and lightweight, being capable of high-speed response to input signals, and being capable of being driven using a DC constant voltage power supply, and are therefore applied to display devices. For example, Patent Document 1 discloses a display device that functions as a touch panel and uses organic EL elements.

[0006] Furthermore, Patent Document 2 discloses an example of a display panel having micro LEDs (Light Emitting Diodes).

[0007] WO2020 / 148604WO2019 / 220265

[0008] An object of one embodiment of the present invention is to provide a display device having an imaging function. Another object is to provide a high-resolution imaging device or display device. Another object is to provide a display device or imaging device with a high aperture ratio. Another object is to provide an imaging device or display device capable of capturing images with high sensitivity. Another object is to provide a display device that can acquire biometric information such as a fingerprint. Another object is to provide a display device that functions as a touch panel. Another object is to provide a display device with an imaging function that is mounted on a vehicle or the like.

[0009] An object of one embodiment of the present invention is to provide a highly reliable display device, imaging device, or electronic device.An object of one embodiment of the present invention is to provide a display device, imaging device, electronic device, or the like having a novel structure.An object of one embodiment of the present invention is to alleviate at least one of the problems of the prior art.

[0010] Note that the description of these problems does not preclude the existence of other problems. Note that one embodiment of the present invention does not necessarily solve all of these problems. Note that problems other than these can be extracted from the description of the specification, drawings, claims, etc.

[0011] After light-emitting diodes (hereinafter also referred to as LEDs) are fabricated on a first substrate, they are picked up and mounted on a second substrate. A light-receiving element is also picked up and mounted on the second substrate on which the light-emitting diodes are mounted, and multiple light-emitting diodes are arranged to surround the light-receiving element, thereby realizing a display device having a light-receiving area in the gap between the light-emitting areas.

[0012] When manufacturing a light-emitting diode, a semiconductor substrate (single crystal silicon substrate, silicon carbide substrate) or a sapphire substrate is used as an initial growth substrate, and a light-emitting diode is manufactured on the substrate by a known method.

[0013] Furthermore, in order to achieve a full-color display, a substrate for each of the three colors red, blue, and green is prepared. In this case, a plurality of red light-emitting diodes is manufactured on the first substrate, a plurality of blue light-emitting diodes is manufactured on the second substrate, and a plurality of green light-emitting diodes is manufactured on the third substrate. In this case, the diodes are picked up one by one and mounted. Alternatively, a certain number of light-emitting diodes, for example, three types of light-emitting diodes, are fixed together with temporary adhesive tape as a set, and then mounted.

[0014] Alternatively, a full-color display may be realized by using blue light-emitting diodes and a color conversion layer to change the light emitted from two of the three blue light-emitting diodes to red or green. When this method is used, three blue light-emitting diodes can be picked up and mounted as a set.

[0015] The configuration disclosed in this specification is a semiconductor device having a plurality of first terminal electrodes and a plurality of second terminal electrodes on a substrate, a light-emitting diode on the first terminal electrode, and a light-receiving element having a photoelectric conversion layer on the second terminal electrode, the light-emitting diode having a first electrode and a second electrode, the first electrode overlapping the first terminal electrode, the first terminal electrode electrically connected to a drive circuit for the light-emitting diode, and the second terminal electrode electrically connected to a drive circuit for the light-receiving element.

[0016] In the above configuration, when mounting the light-emitting diode or light-receiving element, the terminal electrodes on the substrate are aligned with the electrodes on the diode chip, and then electrically connected via a connection layer by bonding or crimping. Wire bonding using Cu or Au can also be used. The connection layer can be made of solder, metal nanoparticles (Cu, Ag, Ni, Sn, Zn, etc.), or an anisotropic conductive film. An anisotropic conductive film (ACF) is a resin material in which conductive particles are dispersed in a thermosetting epoxy resin.

[0017] In the above structure, the substrate is a glass substrate, a quartz substrate, a plastic substrate, or a semiconductor substrate.

[0018] In addition, as the light-receiving element, a photodiode having a region in a photoelectric conversion layer where an n-type or p-type dopant is added to a single crystal semiconductor substrate, a photodiode having an amorphous semiconductor film (typically an amorphous silicon film) in a photoelectric conversion layer, a photodiode having a microcrystalline semiconductor film in a photoelectric conversion layer, a photodiode having a polycrystalline semiconductor film (typically a polysilicon film) in a photoelectric conversion layer, or an organic photodiode having an organic compound in a photoelectric conversion layer can be used.

[0019] Alternatively, a photodiode may be formed on a semiconductor substrate in advance, and a light-emitting diode may be mounted on the semiconductor substrate. This configuration includes a first light-emitting diode overlapping a first region of the semiconductor substrate, a second light-emitting diode overlapping a second region of the semiconductor substrate, and a third light-emitting diode overlapping a third region of the semiconductor substrate, and the semiconductor substrate has a fourth region adjacent to one or more of the first region, the second region, and the third region, and the fourth region of the semiconductor substrate has a photoelectric conversion layer and functions as a light-receiving element.

[0020] In the above configuration, the first light-emitting diode has a first electrode and a second electrode on the first region, and the first light-emitting diode is a light-emitting diode chip having one terminal connected to the first electrode or the second electrode.

[0021] The above-described semiconductor device has a light-receiving element between a plurality of light-emitting elements, in other words, a light-receiving region between a plurality of light-emitting regions. Therefore, since both display and light reception can be performed in the display region, the semiconductor device can be used in a variety of application products. Examples include mobile information terminals, wearable devices, and in-vehicle products. Specifically, the semiconductor device can be used in mobile information terminals having a display screen capable of authentication using an infrared sensor (IR sensor), and in-vehicle products such as LiDAR (Light Detection and Ranging). The LiDAR device has a vertical cavity surface-emitting laser and a CMOS (Complementary Metal Oxide Semiconductor) image sensor capable of receiving near-infrared light.

[0022] A novel display device can be provided that has a light receiving element between a plurality of light emitting elements.

[0023] Note that the description of these effects does not preclude the existence of other effects. Note that one embodiment of the present invention does not necessarily have all of these effects. Note that effects other than these can be extracted from the description in the specification, drawings, claims, etc.

[0024] FIGS. 1A1, 1A2, and 1A3 are perspective views of a substrate for manufacturing light-emitting diodes, and FIG. 1A4 is a perspective view of a substrate for manufacturing light-receiving elements. FIG. 1B is a perspective view of a substrate in the middle of mounting, illustrating one embodiment of the present invention. FIGS. 2A and 2E are cross-sectional views showing an example of the configuration of a display device. FIGS. 2B to 2D and FIGS. 2F to 2H are top views showing example pixels. FIGS. 3A and 3B are cross-sectional views showing an example of the configuration of a display device. FIGS. 3C and 3D are top views showing example pixels. FIGS. 4A and 4B are block diagrams of a display panel 200 illustrating one embodiment of the present invention. FIGS. 5A and 5B are diagrams illustrating an example of the circuit configuration of an imaging pixel. FIGS. 6A to 6D are diagrams illustrating an example of the configuration of a display pixel. FIGS. 7A, 7B, and 7C are examples of the configuration of a light-emitting element. FIGS. 8A1, 8A2, and 8A3 are perspective views of a substrate for manufacturing light-emitting diodes. FIG. 8B is a perspective view of a substrate in the middle of mounting, illustrating one embodiment of the present invention. 9A and 9B are diagrams illustrating a Si transistor. FIGS. 10A to 10D are diagrams illustrating an OS transistor. FIG. 11 is a cross-sectional view illustrating a configuration example of a display device. FIGS. 12A to 12D are diagrams illustrating an example of a transistor. FIGS. 13A to 13F are diagrams illustrating an example of an electronic device. FIGS. 14A to 14F are diagrams illustrating an example of an electronic device.

[0025] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it will be readily understood by those skilled in the art that various modifications can be made to the embodiments and details. Furthermore, the present invention should not be interpreted as being limited to the description of the embodiments shown below.

[0026] Furthermore, when it is stated in this specification that X and Y are connected, it is understood that the following cases are disclosed in this specification: when X and Y are electrically connected, when X and Y are functionally connected, and when X and Y are directly connected. Therefore, it is not limited to a specific connection relationship, for example, a connection relationship shown in a figure or text, and it is understood that connections other than those shown in a figure or text are also disclosed in a figure or text. X and Y are understood to be objects (e.g., devices, elements, circuits, wiring, electrodes, terminals, conductive films, layers, etc.).

[0027] As an example of a case where X and Y are electrically connected, one or more elements (e.g., a switch, a transistor, a capacitance element, an inductor, a resistance element, a diode, a display device, a light-emitting device, a load, etc.) that enable the electrical connection between X and Y can be connected between X and Y. The on and off states of the switch are controlled. In other words, the switch has the function of being in a conductive state (on state) or a non-conductive state (off state) and controlling whether or not a current flows.

[0028] As an example of a case where X and Y are functionally connected, one or more circuits that enable the functional connection between X and Y (for example, logic circuits (inverters, NAND circuits, NOR circuits, etc.), signal conversion circuits (digital-analog conversion circuits, analog-digital conversion circuits, gamma correction circuits, etc.), potential level conversion circuits (power supply circuits (boosting circuits, step-down circuits, etc.), level shifter circuits that change the potential level of a signal, etc.), voltage sources, current sources, switching circuits, amplifier circuits (circuits that can increase the signal amplitude or amount of current, operational amplifiers, differential amplifier circuits, source follower circuits, buffer circuits, etc.), signal generation circuits, memory circuits, control circuits, etc.) can be connected between X and Y. As an example, even if another circuit is sandwiched between X and Y, if a signal output from X is transmitted to Y, X and Y are considered to be functionally connected.

[0029] It should be noted that when it is explicitly stated that X and Y are electrically connected, this includes the case where X and Y are electrically connected (i.e., the case where X and Y are connected with another element or another circuit sandwiched between them) and the case where X and Y are directly connected (i.e., the case where X and Y are connected without another element or another circuit sandwiched between them).

[0030] Furthermore, for example, it can be expressed as follows: "X, Y, and the source (or first terminal, etc.) and drain (or second terminal, etc.) of the transistor are electrically connected to each other, and are electrically connected in the order of X, the source (or first terminal, etc.) of the transistor, the drain (or second terminal, etc.) of the transistor, and Y." Alternatively, it can be expressed as follows: "The source (or first terminal, etc.) of the transistor is electrically connected to X, the drain (or second terminal, etc.) of the transistor is electrically connected to Y, and X, the source (or first terminal, etc.) of the transistor, the drain (or second terminal, etc.) of the transistor, and Y are electrically connected in this order." Alternatively, it can be expressed as follows: "X is electrically connected to Y via the source (or first terminal, etc.) and drain (or second terminal, etc.) of the transistor, and X, the source (or first terminal, etc.) of the transistor, the drain (or second terminal, etc.) of the transistor, and Y are provided in this connection order." By using expressions similar to these examples to define the order of connections in a circuit configuration, the source (or first terminal, etc.) and drain (or second terminal, etc.) of a transistor can be distinguished and the technical scope can be determined. Note that these expressions are merely examples and are not limiting. Here, X and Y represent objects (e.g., devices, elements, circuits, wiring, electrodes, terminals, conductive films, layers, etc.).

[0031] Note that even when independent components are shown electrically connected in a circuit diagram, one component may have the functions of multiple components. For example, if part of a wiring also functions as an electrode, one conductive film has the functions of both a wiring and an electrode. Therefore, in this specification, the term "electrically connected" also includes such cases where one conductive film has the functions of multiple components.

[0032] Furthermore, in this specification, the term "capacitive element" can refer to, for example, a circuit element having a capacitance value higher than 0 F, a region of wiring having a capacitance value higher than 0 F, parasitic capacitance, or the gate capacitance of a transistor. Therefore, in this specification, the term "capacitive element" includes not only a circuit element including a pair of electrodes and a dielectric between the electrodes, but also parasitic capacitance occurring between wiring and one of the source or drain of a transistor and the gate, and the like. Furthermore, terms such as "capacitive element," "parasitic capacitance," and "gate capacitance" can be replaced with terms such as "capacitance," and conversely, the term "capacitance" can be replaced with terms such as "capacitive element," "parasitic capacitance," and "gate capacitance." Furthermore, the term "pair of electrodes" in "capacitance" can be replaced with "pair of conductors," "pair of conductive regions," "pair of regions," and the like. The capacitance value can be, for example, 0.05 fF or more and 10 pF or less. It may also be, for example, 1 pF or more and 10 μF or less.

[0033] Furthermore, in this specification, a transistor has three terminals called a gate, a source, and a drain. The gate is a control terminal that controls the conduction state of the transistor. The two terminals that function as a source or a drain are input / output terminals of the transistor. One of the two input / output terminals becomes a source and the other becomes a drain depending on the transistor's conductivity type (n-channel or p-channel) and the level of the potential applied to the three terminals of the transistor. Therefore, in this specification, the terms source and drain are interchangeable. Furthermore, in this specification, when describing the connection relationship of a transistor, the terms "one of the source or drain" (or first electrode or first terminal) and "the other of the source or drain" (or second electrode or second terminal) are used. Note that, depending on the transistor structure, a backgate may be included in addition to the three terminals described above. In this case, in this specification, one of the gate or backgate of the transistor may be referred to as the first gate, and the other of the gate or backgate of the transistor may be referred to as the second gate. Furthermore, for the same transistor, the terms "gate" and "backgate" may be interchangeable. Furthermore, when a transistor has three or more gates, the gates may be referred to as a first gate, a second gate, a third gate, and so on in this specification and the like.

[0034] Furthermore, in this specification and the like, the term "node" can be rephrased as a terminal, wiring, electrode, conductive layer, conductor, impurity region, etc., depending on the circuit configuration, device structure, etc. Furthermore, the term "node" can be rephrased as a terminal, wiring, etc.

[0035] Furthermore, in this specification, the ordinal numbers "first," "second," and "third" are used to avoid confusion between components. Therefore, they do not limit the number of components. Furthermore, they do not limit the order of the components. For example, a component referred to as "first" in one embodiment of this specification may be a component referred to as "second" in another embodiment, in the claims, etc. Furthermore, for example, a component referred to as "first" in one embodiment of this specification, etc. may be omitted in another embodiment, in the claims, etc.

[0036] Furthermore, in this specification, terms indicating position, such as "above," "below," "upward," or "belowward," may be used for convenience in describing the positional relationship between components with reference to the drawings. Furthermore, the positional relationship between components changes as appropriate depending on the direction in which each configuration is depicted. Therefore, the terms are not limited to those described in the specification, and can be rephrased appropriately depending on the situation. For example, the expression "insulator located on the upper surface of a conductor" can be rephrased as "insulator located on the lower surface of a conductor" by rotating the orientation of the drawing 180 degrees.

[0037] Furthermore, the terms "above" and "below" do not limit the positional relationship of components to being directly above or below and in direct contact with each other. For example, the expression "electrode B on insulating layer A" does not require that electrode B be formed on insulating layer A in direct contact with it, and does not exclude the inclusion of other components between insulating layer A and electrode B.

[0038] Furthermore, in this specification and the like, the term "overlap" does not limit the state of the stacking order of components, etc. For example, the expression "electrode B overlapping insulating layer A" does not limit the state in which electrode B is formed on insulating layer A, but does not exclude the state in which electrode B is formed under insulating layer A or the state in which electrode B is formed on the right (or left) side of insulating layer A, etc.

[0039] Furthermore, in this specification and the like, the terms "adjacent" and "close to" do not necessarily mean that components are in direct contact with each other. For example, the expression "electrode B adjacent to insulating layer A" does not require that insulating layer A and electrode B are formed in direct contact with each other, and does not exclude the inclusion of other components between insulating layer A and electrode B.

[0040] Furthermore, in this specification and the like, terms such as "film" and "layer" can be interchanged depending on the situation. For example, the term "conductive layer" may be changed to the term "conductive film." Or, for example, the term "insulating film" may be changed to the term "insulating layer." Or, depending on the situation, terms such as "film" and "layer" may be replaced with other terms without using terms such as "film" and "layer." For example, the term "conductive layer" or "conductive film" may be changed to the term "conductor." Or, the term "conductor" may be changed to the term "conductive layer" or "conductive film." Or, for example, the term "insulating layer" or "insulating film" may be changed to the term "insulator." Or, the term "insulator" may be changed to the term "insulating layer" or "insulating film."

[0041] Furthermore, in this specification and the like, terms such as "electrode," "wiring," and "terminal" do not functionally limit these components. For example, an "electrode" may be used as part of a "wiring," and vice versa. Furthermore, the terms "electrode" and "wiring" include cases where multiple "electrodes" or "wirings" are integrally formed. Furthermore, for example, a "terminal" may be used as part of a "wiring" or "electrode," and vice versa. Furthermore, the term "terminal" includes cases where multiple "electrodes," "wirings," "terminals," etc. are integrally formed. Therefore, for example, an "electrode" can be part of a "wiring" or "terminal," and a "terminal" can be part of a "wiring" or "electrode." Furthermore, terms such as "electrode," "wiring," and "terminal" may be replaced with terms such as "region" in some cases.

[0042] Furthermore, in this specification and the like, terms such as "wiring," "signal line," and "power line" may be interchangeable depending on the circumstances. For example, the term "wiring" may be changed to the term "signal line." For example, the term "wiring" may be changed to the term "power line." Vice versa, terms such as "signal line" and "power line" may be changed to the term "wiring." A term such as "power line" may be changed to the term "signal line." Vice versa, terms such as "signal line" may be changed to the term "power line." Furthermore, the term "potential" applied to a wiring may be changed to the term "signal" depending on the circumstances. Vice versa, terms such as "signal" may be changed to the term "potential."

[0043] In this specification, "parallel" refers to a state in which two straight lines are arranged at an angle of -10° or more and 10° or less. Therefore, it also includes cases where the angle is -5° or more and 5° or less. Furthermore, "substantially parallel" or "roughly parallel" refers to a state in which two straight lines are arranged at an angle of -30° or more and 30° or less. Furthermore, "perpendicular" refers to a state in which two straight lines are arranged at an angle of 80° or more and 100° or less. Therefore, it also includes cases where the angle is 85° or more and 95° or less. Furthermore, "substantially perpendicular" or "approximately perpendicular" refers to a state in which two straight lines are arranged at an angle of 60° or more and 120° or less.

[0044] In this specification, when referring to counting values ​​and measurement values, terms such as "identical," "same," "equal," or "uniform" (including synonyms thereof) are used, they are considered to include an error of plus or minus 20%, unless otherwise specified.

[0045] The embodiments described in this specification will be described with reference to the drawings. However, the embodiments can be implemented in many different ways, and those skilled in the art will readily understand that various changes in form and detail can be made without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments. Note that in the configuration of the invention of the embodiments, the same reference numerals are used in different drawings for the same parts or parts having similar functions, and repeated description thereof may be omitted. Furthermore, when referring to similar functions, the same hatch pattern may be used and no particular reference numeral may be assigned. Furthermore, to make the drawings easier to understand, the illustration of some components may be omitted in perspective views, top views, etc.

[0046] In addition, in the drawings and the like relating to this specification, the size, layer thickness, or region may be exaggerated for clarity. Therefore, the size or aspect ratio is not necessarily limited. Note that the drawings are schematic illustrations of ideal examples and are not limited to the shapes or values ​​shown in the drawings. For example, variations in signal, voltage, or current due to noise, or variations in signal, voltage, or current due to timing deviations, etc. may be included.

[0047] In addition, in drawings and the like relating to this specification, arrows indicating the X direction, Y direction, and Z direction may be used. In this specification and the like, the "X direction" refers to the direction along the X axis, and the forward direction and the reverse direction may not be distinguished unless explicitly stated. The same applies to the "Y direction" and the "Z direction." The X direction, Y direction, and Z direction are directions that intersect with each other. More specifically, the X direction, Y direction, and Z direction are directions that are perpendicular to each other. In this specification and the like, one of the X direction, Y direction, and Z direction may be referred to as the "first direction" or "first direction." The other may be referred to as the "second direction" or "second direction." The remaining one may be referred to as the "third direction" or "third direction."

[0048] In this specification, when the same symbol is used for multiple elements, and particularly when it is necessary to distinguish between them, an identifying symbol such as “A”, “b”, “_1”, "[n]”, or "[m, n]” may be added to the symbol.

[0049] In this embodiment mode, a pixel circuit or a driver circuit is formed on a glass substrate 201, and a plurality of terminal electrodes are formed. A light-emitting element and a light-receiving element are mounted on the formed plurality of terminal electrodes to manufacture a display device.

[0050] The light-emitting element uses a light-emitting diode formed on a sapphire substrate. A number of light-emitting diodes of desired sizes are fabricated on the sapphire substrate as an initial growth substrate by a known method. Since the material of the light-emitting layer differs depending on the light-emitting color of the light-emitting diode, the same number of sapphire substrates as the light-emitting colors are prepared.

[0051] In this embodiment, a substrate 901 for a red light emitting diode shown in Fig. 1A1, a substrate 902 for a green light emitting diode shown in Fig. 1A2, and a substrate 903 for a blue light emitting diode shown in Fig. 1A3 are prepared. On each substrate, micro LEDs having a chip size of rectangular planar shape with at least one side less than 0.1 mm, or mini LEDs having a chip size of rectangular planar shape with at least one side 0.1 mm or more, are arranged continuously in the vertical and horizontal directions.

[0052] Also prepared is a light receiving element formed on a single crystal silicon wafer 904. Note that Fig. 1A4 is a perspective view of a substrate on which a light receiving element is provided.

[0053] First, light-receiving elements 212 are mounted on terminal electrodes arranged in a matrix on glass substrate 201, and then light-emitting diodes are mounted one by one. Fig. 1B shows a perspective view during mounting, illustrating the stage where red light-emitting diodes 11R, green light-emitting diodes 11G, and blue light-emitting diodes 11B are mounted one by one on glass substrate 201 on which light-receiving elements 212 are mounted.

[0054] 1B, three sub-pixels, a red light emitting diode 11R, a green light emitting diode 11G, and a blue light emitting diode 11B, are provided as one pixel, thereby enabling full color display, and a light receiving element 212 is also provided. Note that the arrangement positions of the sub-pixels and the size of the light emitting region are not particularly limited to the example in FIG. 1B, and may be set appropriately by the designer.

[0055] Alternatively, a full-color display can be achieved by using only the light-emitting diode 11B that emits excitation light in the blue wavelength band (peak wavelength 400 nm or more and 500 nm or less) as a sub-pixel and combining it with a color conversion layer (also called a phosphor layer).

[0056] Alternatively, a full-color display can be realized by using only ultraviolet light-emitting diodes (with a peak wavelength of 200 nm or more and less than 400 nm) as subpixels in combination with a color conversion layer and a coloring layer. The color conversion layer (or coloring layer) is a resin layer containing a fluorescent colorant (pigment or dye).

[0057] The pixel circuit or the driver circuit formed on the glass substrate 201 may be configured using thin film transistors, and the semiconductor layer of the thin film transistor may be made of an amorphous semiconductor film, a polycrystalline semiconductor film, or an oxide semiconductor film. A polycrystalline silicon film (also called a polysilicon film) may be used as the polycrystalline semiconductor film, and an IGZO film may be used as the oxide semiconductor film. Alternatively, a pixel circuit or a driver circuit may be configured by combining a first thin film transistor using a polycrystalline semiconductor film and a second thin film transistor using an oxide semiconductor film on the glass substrate 201.

[0058] After the light-emitting diode and the light-receiving element are mounted, a protective substrate is placed on the substrate. The protective substrate is preferably made of a material that transmits light from the light-emitting diode and does not block light received by the light-receiving element, such as a quartz substrate, a glass substrate, or a film.

[0059] A cross-sectional view of the display panel 200 thus fabricated is shown in FIG. 2A.

[0060] [Configuration Example 1 of Display Device] [Configuration Example 1-1]

[0061] 2A , the display panel 200 includes a functional layer 203 including pixel circuits or drive circuits provided on a glass substrate 201, a light-emitting diode (LED) and a light-receiving element provided thereon, and a protective substrate 202. The functional layer 203 includes switches, transistors, capacitors, wiring, and terminal electrodes 203 a, which are electrically connected to the electrodes 11 a of the light-emitting diodes. A connection layer containing solder or conductive particles may be used to connect the terminal electrodes to the electrodes of the light-emitting diodes and the light-receiving elements.

[0062] The gap between the protective substrate 202 and the glass substrate 201 may be filled with a resin or dry gas. A gap material may be disposed to maintain the gap between the protective substrate 202 and the glass substrate 201, or the peripheral portions of the protective substrate 202 and the glass substrate 201 may be fixed with a sealing material.

[0063] The display panel 200 has a plurality of pixels arranged in a matrix. Each pixel has one or more sub-pixels. Each sub-pixel has one light-emitting diode. For example, a pixel may have three sub-pixels (e.g., three colors: R, G, and B, or three colors: yellow (Y), cyan (C), and magenta (M)), or four sub-pixels (e.g., four colors: R, G, B, and white (W), or four colors: R, G, B, and Y). Each pixel also has a light-receiving element 212. The light-receiving element 212 may be provided in all pixels or in some pixels. Furthermore, one pixel may have multiple light-receiving elements 212.

[0064] 2A shows a state in which a finger 220 touches the surface of the protective substrate 202. A portion of the light emitted by the light-emitting diode 11G is reflected at the contact point between the protective substrate 202 and the finger 220. A portion of the reflected light is then incident on the light-receiving element 212, making it possible to detect that the finger 220 has touched the protective substrate 202. In other words, the display panel 200 can function as a touch panel.

[0065] 2B to 2D show examples of pixels that can be used in the display panel 200. FIG.

[0066] The pixels shown in FIGS. 2B and 2C each have a red (R) light emitting diode 11R, a green (G) light emitting diode 11G, a blue (B) light emitting diode 11B, and a light receiving element 212.

[0067] Fig. 2B shows an example in which three light-emitting diodes and one light-receiving element are arranged in a 2 x 2 matrix, while Fig. 2C shows an example in which three light-emitting diodes are arranged in a row, with one horizontally long light-receiving element 212 arranged below them.

[0068] The pixel shown in Fig. 2D is an example having a white (W) light-emitting diode 11W. The white (W) light-emitting diode 11W uses a blue light-emitting diode and emits white light by illuminating a yellow phosphor. Here, four types of light-emitting diodes are arranged in a row, and a light-receiving element 212 is arranged below them.

[0069] The pixel configuration is not limited to the above, and various arrangement methods can be adopted.

[0070] [Configuration Example 1-2] Hereinafter, a configuration example of a display panel 200A including a light emitting diode that emits visible light, a light emitting diode that emits infrared light, and a light receiving element will be described.

[0071] 2A, the display panel 200A shown in Fig. 2E includes a light-emitting diode 11IR. The light-emitting diode 11IR is a light-emitting diode that emits infrared light IR. In this case, it is preferable to use an element that can receive at least the infrared light IR emitted by the light-emitting diode 11IR as the light-receiving element 212.

[0072] As shown in Figure 2E, when a finger 220 touches the protective substrate 202, the infrared light IR emitted from the light-emitting diode 11IR is reflected by the finger 220, and a portion of the reflected light is incident on the light-receiving element 212, thereby obtaining position information of the finger 220.

[0073] 2F to 2H show an example of a pixel applicable to the display panel 200A.

[0074] Fig. 2F shows an example in which three light-emitting diodes are arranged in a row, and below them, light-emitting diode 11IR and light-receiving element 212 are arranged side by side. Fig. 2G shows an example in which four types of light-emitting diodes including light-emitting diode 11IR are arranged in a row, and below them, light-receiving element 212 is arranged.

[0075] FIG. 2H shows an example in which three types of light-emitting diodes and a light-receiving element 212 are arranged on all four sides with the light-emitting diode 11IR at the center.

[0076] In the pixels shown in FIGS. 2F to 2H, the positions of the light-emitting diodes and the light-receiving elements can be interchanged.

[0077] [Configuration Example 1-3] Hereinafter, a configuration example of a display panel 200B including a light emitting diode that emits blue light, a light emitting diode that emits infrared light, and a light receiving element that receives infrared light will be described.

[0078] 3A includes a color conversion layer 202R that overlaps with the light-emitting diode 11B. It also includes a color conversion layer 202G that overlaps with the light-emitting diode 11B. When mounting, a plurality of the same light-emitting diodes 11B can be mounted together.

[0079] [Configuration Example 1-4] Hereinafter, a configuration example of a display panel 200C including a light-emitting diode that emits ultraviolet light and a light-receiving element that receives ultraviolet light will be described.

[0080] 3B is capable of full-color display using only the light-emitting diodes 11UV, and is also capable of receiving ultraviolet light. The light-emitting diodes 11UV are light-emitting diodes that emit ultraviolet light UV.

[0081] 3B includes a color conversion layer 202r that overlaps the light-emitting diode 11UV. It also includes a color conversion layer 202b that overlaps the light-emitting diode 11UV. It also includes a color conversion layer 202g that overlaps the light-emitting diode 11UV. When mounting, multiple identical light-emitting diodes 11UV can be mounted together.

[0082] [Configuration Example 1-5] Fig. 3C shows four pixels to which a Pentile arrangement is applied, in which two adjacent pixels have light-emitting diodes that emit light of two different colors. Note that Fig. 3C shows the top view of the light-emitting diodes.

[0083] The upper left pixel and lower right pixel shown in Fig. 3C have light-emitting diode 11R and light-emitting diode 11G. The upper right pixel and lower left pixel have light-emitting diode 11G and light-emitting diode 11B. That is, in the example shown in Fig. 3C, each pixel is provided with light-emitting diode 11G. Each light-emitting diode forms a sub-pixel, and two types of pixels are arranged: a pixel that combines light-emitting diode 11R and light-emitting diode 11G, and a pixel that combines light-emitting diode 11G and light-emitting diode 11B.

[0084] The top surface shape of the light-emitting diode is not particularly limited and may be a circle, an ellipse, a polygon, a polygon with rounded corners, etc. Fig. 3C shows an example in which the top surface shape of the light-emitting diode is a square (diamond) tilted at approximately 45 degrees. The top surface shapes of the light-emitting diodes of each color may be different from each other, or may be the same for some or all of the colors.

[0085] The sizes of the light-emitting regions of the light-emitting diodes of each color may be different from each other, or may be the same for some or all of the colors. For example, in Figure 3C, the area of ​​the light-emitting region of the light-emitting diode 11G provided in each pixel may be smaller than the light-emitting regions of the other elements.

[0086] Fig. 3D is a modified example of the pixel array shown in Fig. 3C. The upper left pixel and lower right pixel shown in Fig. 3D have light-emitting diode 11R and light-emitting diode 11G. The upper right pixel and lower left pixel have light-emitting diode 11R and light-emitting diode 11B. That is, in the example shown in Fig. 3D, each pixel is provided with light-emitting diode 11R. Each light-emitting diode constitutes a sub-pixel, and two types of pixels are arranged: a pixel combining light-emitting diode 11R and light-emitting diode 11G, and a pixel combining light-emitting diode 11R and light-emitting diode 11B.

[0087] Although the light receiving element is not shown in FIGS. 3C and 3D, it is not particularly limited as long as it is located between the light emitting diodes. For example, one light receiving element may be located between two adjacent sub-pixels.

[0088] As described above, pixels with various arrangements can be applied to a display device having a display panel of this embodiment mode.

[0089] This embodiment mode can be implemented by appropriately combining at least a part thereof with other embodiment modes described in this specification.

[0090] (Embodiment 2) The display device has three types of light-emitting diodes 11R, 11G, and 11B and a light-receiving device. It may also have a light-emitting diode 11IR that emits near-infrared light as a light source. The light-receiving device has a function of detecting light emitted from a visible light or near-infrared light source and reflected by an object. When a near-infrared light source is used, there is essentially no visibility, so even if light from the first, second, and third light-emitting devices is emitted at high brightness from the display unit, visibility of the display is not affected.

[0091] Fig. 4A shows a block diagram of the light-receiving elements 212 and drive circuits in the display panel 200. Fig. 4B shows a block diagram of the light-emitting diodes and drive circuits in the display panel 200. Since the light-receiving elements 212 and the light-emitting diodes are driven independently, they require their own drive circuits, and for ease of understanding, they are shown separately in Figs. 4A and 4B, but in reality, they are configured using the functional layer 203 shown in Fig. 2A or an external drive IC. Note that the same reference numerals will be used in Figs. 4A and 4B to describe parts corresponding to those in the display panel 200 in Fig. 2A.

[0092] 4A, the display panel 200 includes a pixel array 17, a light receiving element 212, a first drive circuit unit 13, a second drive circuit unit 14, a readout circuit unit 15, wiring 131, wiring 132, wiring 133, and a control circuit unit 16. A microlens array including a plurality of microlenses may be provided so as to overlap the light receiving element 212. The light receiving element 212 is mounted in the column and row directions so as not to overlap with the light emitting diodes. Note that in FIG. 4A, a terminal OUT indicates an output terminal.

[0093] The light receiving element 212 can be, for example, a pn-type or pin-type photodiode. A photodiode chip using crystalline silicon (single crystal silicon, polycrystalline silicon, microcrystalline silicon, etc.) can also be used as the light receiving device. A photoelectric conversion element that detects incident light and generates electric charge can be used as the light receiving device. In the light receiving device, the amount of electric charge generated is determined based on the amount of incident light.

[0094] An organic photodiode having an organic compound in a photoelectric conversion layer can also be used as the light-receiving element 212. Organic photodiodes can be easily made thin, lightweight, and large in area. In addition, they have a high degree of freedom in shape and design, making them applicable to a variety of display devices.

[0095] 4B , the display panel 200 includes a pixel array 17, three types of light-emitting diodes 11R, 11G, and 11B, a first drive circuit unit 231, and a second drive circuit unit 232. Note that in FIG. 4B , the mounting position of the light-receiving element 212 is indicated by a dotted line, and the positional relationship with the mounting positions of the three sub-pixels, i.e., the three types of light-emitting diodes 11R, 11G, and 11B, in one pixel 10 is shown. It can also be said that the display panel 200 has three display pixels and one imaging pixel in one pixel 10.

[0096] In this specification, the smallest unit within a single "pixel" that performs independent operation is defined as a "sub-pixel" for convenience in the explanation, but "pixel" may be replaced with "region" and "sub-pixel" may be replaced with "pixel".

[0097] The three types of light-emitting diodes 11R, 11G, and 11B are LEDs such as micro LEDs. Micro LEDs have a chip size of a rectangular planar shape with at least one side less than 0.1 mm. Mini LEDs, which have a chip size of a rectangular planar shape with at least one side 0.1 mm or more, may also be used.

[0098] The light receiving element 212 has a function of detecting light emitted by the green light emitting diode 11G and reflected by an object. The light receiving element 212 may be a light receiving device sensitive to near-infrared light. Furthermore, the pixel 10 may further be provided with a light emitting diode that emits infrared light.

[0099] The drive circuit for capturing images using the light receiving element 212 is provided separately from the drive circuit for displaying images. Specifically, the drive circuit for capturing images is shown in Figures 5A and 5B. The drive circuit for displaying images is shown in Figures 6A, 6B, 6C, and 6D.

[0100] 5A is a circuit diagram illustrating an example of the circuit configuration of the light receiving element 212. A driver circuit including the light receiving element 212 includes a transistor 102, a transistor 103, a transistor 104, a transistor 105, and a capacitor 108. Note that the capacitor 108 may not be provided. Furthermore, a circuit for correcting variations in transistors may be provided, or variations in transistors may be externally corrected.

[0101] One electrode (cathode) of the light-receiving element 212 is electrically connected to one of the source and drain of the transistor 102. The other of the source and drain of the transistor 102 is electrically connected to one of the source and drain of the transistor 103. The one of the source and drain of the transistor 103 is electrically connected to one electrode of the capacitor 108. One electrode of the capacitor 108 is electrically connected to the gate of the transistor 104. The one of the source and drain of the transistor 104 is electrically connected to one of the source and drain of the transistor 105.

[0102] Here, a wiring that connects the other of the source and the drain of the transistor 102, one electrode of the capacitor 108, and the gate of the transistor 104 is referred to as a node FD. The node FD can function as a charge detection portion.

[0103] The other electrode (anode) of the light-receiving element 212 is electrically connected to a wiring 121. The gate of the transistor 102 is electrically connected to a wiring 127. The other of the source and the drain of the transistor 103 is electrically connected to a wiring 122. The other of the source and the drain of the transistor 104 is electrically connected to a wiring 123. The gate of the transistor 103 is electrically connected to a wiring 126. The gate of the transistor 105 is electrically connected to a wiring 128. The other electrode of the capacitor 108 is electrically connected to a reference potential line such as a GND wiring. The other of the source and the drain of the transistor 105 is electrically connected to a wiring 352.

[0104] The wirings 127, 126, and 128 function as signal lines for controlling the on / off states of the transistors. The wiring 352 functions as an output line.

[0105] 5A, the cathode side of the light-receiving element 212 is electrically connected to the transistor 102, and the node FD is reset to a high potential to operate. Therefore, the wiring 122 has a high potential (a higher potential than the wiring 121).

[0106] 5A shows a configuration in which the cathode of the light-receiving element 212 is electrically connected to the node FD, a configuration in which the anode of the light-receiving element 212 is electrically connected to one of the source and the drain of the transistor 102 may be used. In this case, the node FD is reset to a low potential to operate, and therefore the wiring 122 may be set to a low potential (a potential lower than that of the wiring 121).

[0107] The transistor 102 has a function of controlling the potential of the node FD. The transistor 102 is also referred to as a "transfer transistor." The transistor 103 has a function of resetting the potential of the node FD. The transistor 103 is also referred to as a "reset transistor." The transistor 104 functions as a source follower circuit and can output the potential of the node FD as image data to the wiring 352. The transistor 105 has a function of selecting a pixel to output image data. The transistor 104 is also referred to as an "amplification transistor." The transistor 105 is also referred to as a "selection transistor."

[0108] 5B , a plurality of pairs of a light-receiving element 212 and a transistor 102 may be connected to the node FD, each pair including a light-receiving element 212 and a transistor 102. According to the circuit configuration shown in FIG. 5B , the area occupied by each light-receiving element 212 can be reduced. Therefore, the packaging density of the light-receiving elements 212 can be increased.

[0109] 5B, the first pair of the light-receiving element 212 and the transistor 102 are shown as a light-receiving element 212_1 and a transistor 102_1. The gate of the transistor 102_1 is electrically connected to a wiring 127_1. The second pair of the light-receiving element 212 and the transistor 102 are shown as a light-receiving element 212_2 and a transistor 102_2. The gate of the transistor 102_2 is electrically connected to a wiring 127_2. The kth pair of the light-receiving element 212 and the transistor 102 (k is an integer of 1 or more) are shown as a light-receiving element 212_k and a transistor 102_k. The gate of the transistor 102_k is electrically connected to a wiring 127_k.

[0110] <Circuit Configuration Example 1 of Display Pixel> Fig. 6A is a diagram showing an example of the circuit configuration of a sub-pixel within one pixel 10. In this embodiment, a sub-pixel that emits red light will be described as an example. The sub-pixel has a display pixel circuit 431 and a light-emitting diode 11R. The other sub-pixels are a sub-pixel that emits blue light and a sub-pixel that emits green light, and the three types of light-emitting diodes form one pixel 10, and are arranged in m rows and n columns to form a display area. Both m and n are integers greater than or equal to 1.

[0111] The display pixel circuit 431 includes a transistor 436, a capacitor 433, a transistor 251, and a transistor 434. The display pixel circuit 431 is electrically connected to the light-emitting diode 11R.

[0112] One of the source electrode and the drain electrode of the transistor 436 is electrically connected to a wiring (hereinafter referred to as a signal line DL_n) to which a data signal (also referred to as a "video signal") is applied. Furthermore, a gate electrode of the transistor 436 is electrically connected to a wiring (hereinafter referred to as a scan line GL_m) to which a gate signal is applied. The signal line DL_n and the scan line GL_m correspond to the wiring 237 and the wiring 236 (in FIG. 4B ), respectively.

[0113] The transistor 436 has a function of controlling writing of a data signal to the node 435 .

[0114] One of a pair of electrodes of the capacitor 433 is electrically connected to a node 435, and the other is electrically connected to a node 437. The other of the source electrode and the drain electrode of the transistor 436 is electrically connected to the node 435.

[0115] The capacitor 433 functions as a storage capacitor for holding data written to the node 435 .

[0116] One of a source electrode and a drain electrode of the transistor 251 is electrically connected to the potential supply line VL_a, and the other is electrically connected to a node 437. Furthermore, a gate electrode of the transistor 251 is electrically connected to a node 435.

[0117] One of a source electrode and a drain electrode of the transistor 434 is electrically connected to the potential supply line V0, and the other is electrically connected to a node 437. Furthermore, a gate electrode of the transistor 434 is electrically connected to the scan line GL_m.

[0118] One of the anode or the cathode of the light-emitting diode 11R is electrically connected to the potential supply line VL_b, and the other is electrically connected to a node 437.

[0119] Note that, for example, a relatively high potential or a relatively low potential can be used as the power supply potential. The high potential side power supply potential is called a high power supply potential (also called "VDD"), and the low potential side power supply potential is called a low power supply potential (also called "VSS"). Also, the ground potential can be used as the high power supply potential or the low power supply potential. For example, when the high power supply potential is the ground potential, the low power supply potential is a potential lower than the ground potential, and when the low power supply potential is the ground potential, the high power supply potential is a potential higher than the ground potential.

[0120] For example, a high power supply potential VDD is applied to one of the potential supply line VL_a and the potential supply line VL_b, and a low power supply potential VSS is applied to the other.

[0121] In a display device having the display pixel circuits 431 , the display pixel circuits 431 in each row are selected in sequence by a circuit included in a peripheral driver circuit, and the transistors 436 and 434 are turned on to write a data signal to the node 435 .

[0122] The display pixel circuit 431, in which data has been written to the node 435, is put into a holding state by turning off the transistors 436 and 434. Furthermore, the amount of current flowing between the source electrode and drain electrode of the transistor 251 is controlled according to the potential of the data written to the node 435, and the light-emitting diode 11R emits red light with a luminance according to the amount of current flowing. By performing this process sequentially for each row, a red image can be displayed. Furthermore, by driving the light-emitting diodes 11B and 11G in the same manner, a full-color image can be displayed.

[0123] Furthermore, a circuit for correcting variations in transistors may be provided, and variations in transistors may be externally corrected.

[0124] <Circuit Configuration Example 2 of Display Pixel> Fig. 6B shows a modification of the circuit configuration of the display pixel shown in Fig. 6A. In the circuit configuration shown in Fig. 6B, the gate electrode of the transistor 436 is electrically connected to a line (hereinafter referred to as a scanning line GL1_m) to which a first scanning signal is applied. Also, the gate electrode of the transistor 434 is electrically connected to a line (hereinafter referred to as a scanning line GL2_m) to which a second scanning signal is applied.

[0125] 6B includes a transistor 438 in addition to the circuit configuration shown in Fig. 6A. One of a source electrode and a drain electrode of the transistor 438 is electrically connected to the potential supply line V0, and the other is electrically connected to the node 435. Furthermore, a gate electrode of the transistor 438 is electrically connected to a line to which a third scan signal is supplied (hereinafter referred to as a scan line GL3_m).

[0126] The scanning line GL1_m corresponds to the wiring 236 shown in Fig. 4B. Although wiring corresponding to the scanning line GL2_m and the scanning line GL3_m is not shown in Fig. 4B, the scanning line GL2_m and the scanning line GL3_m are electrically connected to the first drive circuit unit 231.

[0127] For example, when it is desired to make the light-emitting diode 11R display black, both the transistor 434 and the transistor 438 are turned on. This causes the potentials of the source electrode and gate electrode of the transistor 251 to be equal. As a result, the gate voltage of the transistor 251 becomes 0 V, and the current flowing through the light-emitting diode 11R can be cut off.

[0128] Some or all of the transistors included in the display pixel circuit 431 may be transistors having back gates. In the circuit configuration shown in FIG. 6B , transistors having back gates are used. For example, the gate and back gate of each of the transistors 434, 436, and 438 are electrically connected to each other. In addition, the back gate of the transistor 251 shown in FIG. 6B is electrically connected to the node 437.

[0129] Furthermore, a circuit for correcting variations in transistors may be provided, and variations in transistors may be externally corrected.

[0130] <Circuit Configuration Example 3 of Display Pixel> Figure 6C shows a modified example of the circuit configuration of the display pixel shown in Figure 6A. The circuit configuration shown in Figure 6C has a configuration in which the transistor 434 and the potential supply line V0 are removed from the circuit configuration shown in Figure 6A. The other components can be understood by referring to the description of the circuit configuration shown in Figure 6A. Therefore, in order to reduce repetition of the description, a detailed description of the circuit configuration shown in Figure 6C will be omitted.

[0131] As described above, some or all of the transistors included in the display pixel circuit 431 may be transistors having back gates. For example, as shown in FIG. 6D , a transistor having a back gate may be used as the transistor 436, and the back gate and the gate may be electrically connected. Alternatively, the back gate may be electrically connected to either the source or the drain of the transistor, as in the case of a transistor 251 shown in FIG. 6D .

[0132] The common wiring for the light-emitting diodes 11R, 11G, and 11B and the common wiring for the light-receiving element 212 may be shared to reduce the number of wirings.

[0133] Furthermore, image data of a fingerprint, palm print, iris, or the like can be acquired using the light receiving element 212. In other words, a biometric authentication function can be added to the display device. Note that image data may also be acquired by bringing an object into contact with the display device.

[0134] Furthermore, the light receiving element 212 can be used to acquire imaging data such as the user's facial expression, eye movement, or changes in pupil diameter. By analyzing this image data, it is possible to acquire information about the user's physical and mental state. Based on this information, it is possible to perform operations tailored to the user's physical and mental state, such as changing the display and / or audio output by the display device. These operations are effective for, for example, devices for VR (Virtual Reality), AR (Augmented Reality), or MR (Mixed Reality).

[0135] Furthermore, a circuit for correcting variations in transistors may be provided, and variations in transistors may be externally corrected.

[0136] Third Embodiment In this embodiment, the configuration of a light emitting diode will be described below. An individually cut light emitting diode chip may be called an LED chip 51.

[0137] The structure of the light-emitting diode is not particularly limited, and may be a metal insulator semiconductor (MIS) junction, or a homostructure, heterostructure, or double heterostructure having a PN junction or a PIN junction. It may also be a superlattice structure, or a single quantum well structure or a multi-quantum well (MQW) structure in which thin films that generate quantum effects are stacked. An LED chip using nanocolumns may also be used.

[0138] Examples of LED chips are shown in FIGS. 7A and 7B . FIG. 7A shows a cross-sectional view of the LED chip 51, and FIG. 7B shows a top view of the LED chip 51. The LED chip 51 includes a semiconductor layer 81. The semiconductor layer 81 includes an n-type semiconductor layer 75, a light-emitting layer 77 on the n-type semiconductor layer 75, and a p-type semiconductor layer 79 on the light-emitting layer 77. The p-type semiconductor layer 79 can be made of a material having a bandgap energy greater than that of the light-emitting layer 77 and capable of confining carriers in the light-emitting layer 77. The LED chip 51 also includes an electrode 85 functioning as a cathode on the n-type semiconductor layer 75, an electrode 83 functioning as a contact electrode on the p-type semiconductor layer 79, and an electrode 87 functioning as an anode on the electrode 83. The top and side surfaces of the electrode 83 are preferably covered with an insulating layer 89. The insulating layer 89 functions as a protective film for the LED chip 51.

[0139] 7C shows an example of an enlarged view of the semiconductor layer 81. As shown in Fig. 7C, the n-type semiconductor layer 75 may have an n-type contact layer 75a on the substrate 71 side and an n-type clad layer 75b on the light-emitting layer 77 side. The p-type semiconductor layer 79 may have a p-type clad layer 79a on the light-emitting layer 77 side and a p-type contact layer 79b on the p-type clad layer 79a.

[0140] The light-emitting layer 77 may have a multiple quantum well (MQW) structure in which barrier layers 77a and well layers 77b are stacked multiple times. The barrier layers 77a are preferably made of a material with a larger bandgap energy than the well layers 77b. This structure allows energy to be confined in the well layers 77b, improving quantum efficiency and the light-emitting efficiency of the LED chip 51.

[0141] In the face-up type LED chip 51, the electrode 83 can be made of a light-transmitting material, for example, ITO (In ２ O ３ -SnO ２ ), AZO(Al ２ O ３ -ZnO), In-Zn oxide (In ２ O ３ -ZnO), GZO (GeO ２ -ZnO), ICO(In ２ O ３ -CeO ２ In the face-up type LED chip 51, light is mainly emitted toward the electrode 87 side. In the face-down type LED chip 51, the electrode 83 can be made of a material that reflects light, such as a metal such as silver, aluminum, or rhodium. In the face-down type LED chip 51, light is mainly emitted toward the substrate 71 side.

[0142] The substrate 71 is a sapphire single crystal (Al ２ O ３ ), spinel single crystal (MgAl ２ O ４ ), ZnO single crystal, LiAlO ２ Single crystal, LiGaO ２ Single crystals, oxide single crystals such as MgO single crystals, Si single crystals, SiC single crystals, GaAs single crystals, AlN single crystals, GaN single crystals, ZrB ２ In the face-down type LED chip 51, the substrate 71 is preferably made of a light-transmitting material, such as a light-transmitting sapphire single crystal.

[0143] A buffer layer (not shown) may be provided between the substrate 71 and the n-type semiconductor layer 75. The buffer layer has the function of reducing the difference in lattice constant between the substrate 71 and the n-type semiconductor layer 75.

[0144] The LED chip 51 that can be used as a light-emitting diode chip preferably has a horizontal structure in which the electrodes 85 and 87 are arranged on the same surface, as shown in FIG. 7A . Providing the electrodes 85 and 87 of the LED chip 51 on the same surface facilitates connection with the terminal electrodes, simplifying the structure of the terminal electrodes. Furthermore, the LED chip 51 that can be used as a light-emitting diode chip is preferably a face-down type. By using a face-down type LED chip 51, light emitted from the LED chip 51 can be efficiently emitted toward the display surface of the display device, resulting in a display device with high brightness. A commercially available LED chip may be used as the LED chip 51.

[0145] To obtain white light emission, a color conversion layer is used. The phosphor contained in the color conversion layer can be an organic resin layer on which a phosphor is printed or painted, or an organic resin layer mixed with a phosphor. The color conversion layer can be made of a material that is excited by light emitted by the LED chip 51 and emits light of a color complementary to the color of light emitted by the LED chip 51. With this configuration, the light emitted by the light-emitting diode chip and the light emitted by the phosphor are combined, allowing white light to be emitted from the color conversion layer.

[0146] For example, by using an LED chip 51 that emits blue light and a phosphor that emits yellow light, which is the complementary color of blue, it is possible to configure the color conversion layer to emit white light. A typical example of the LED chip 51 that can emit blue light is a diode made of a group 13 nitride-based compound semiconductor, and one example is In ｘ Al ｙ Ga １−ｘ−ｙ There is a diode having a GaN system represented by the formula N (x is 0 or more and 1 or less, y is 0 or more and 1 or less, x + y is 0 or more and 1 or less). A typical example of a phosphor that is excited by blue light and emits yellow light is Y ３ Al ５ O １２:Ce(YAG:Ce), (Ba, Sr, Mg) ２ SiO ４ : Eu, Mn, etc.

[0147] For example, an LED chip 51 that emits blue-green light and a phosphor that emits red light, which is the complementary color of blue-green, may be used, so that white light is emitted from the color conversion layer.

[0148] The color conversion layer may have multiple types of phosphors, and each phosphor may emit light of a different color. For example, a configuration in which white light is emitted from the color conversion layer may be used by using an LED chip 51 that emits blue light, a phosphor that emits red light, and a phosphor that emits green light. A representative example of a phosphor that is excited by blue light and emits red light is (Ca,Sr)S:Eu,Sr ２ Si ７ Al ３ ON １３ A typical example of a phosphor that is excited by blue light and emits green light is SrGa ２ S ４ : Eu, Sr ３ Si １３ Al ３ O ２ N ２１ : Eu, etc.

[0149] Furthermore, a configuration can be achieved in which white light is emitted from the color conversion layer by using an LED chip 51 that emits near-ultraviolet light or violet light, a phosphor that emits red light, a phosphor that emits green light, and a phosphor that emits blue light. A representative example of a phosphor that is excited by near-ultraviolet light or violet light and emits red light is (Ca,Sr)S:Eu,Sr ２ Si ７ Al ３ ON １３ : Eu, La ２ O ２ A typical example of a phosphor that is excited by near-ultraviolet light or violet light and emits green light is SrGa ２ S ４ : Eu, Sr ３ Si １３ Al ３ O ２ N ２１Representative examples of phosphors that are excited by near-ultraviolet light or violet light and emit blue light include Sr １０ (P.O. ４ ) ６ Cl ２ :Eu, (Sr, Ba, Ca) １０ (P.O. ４ ) ６ Cl ２ : Eu, etc.

[0150] In addition, near-ultraviolet light has a maximum peak in the wavelength range of 200 nm to 380 nm in its emission spectrum. Furthermore, violet light has a maximum peak in the wavelength range of 380 nm to 430 nm in its emission spectrum. Furthermore, blue light has a maximum peak in the wavelength range of 430 nm to 490 nm in its emission spectrum. Furthermore, green light has a maximum peak in the wavelength range of 490 nm to 550 nm in its emission spectrum. Furthermore, yellow light has a maximum peak in the wavelength range of 550 nm to 590 nm in its emission spectrum. Furthermore, red light has a maximum peak in the wavelength range of 640 nm to 770 nm in its emission spectrum.

[0151] When the color conversion layer includes a phosphor that emits yellow light and an LED chip 51 that emits blue light is used, the light emitted by the LED chip 51 preferably has a maximum peak in the wavelength range of 330 nm to 500 nm in its emission spectrum, more preferably a maximum peak in the wavelength range of 430 nm to 490 nm, and even more preferably a maximum peak in the wavelength range of 450 nm to 480 nm. This allows for efficient excitation of the phosphor. Furthermore, when the light emitted by the LED chip 51 has a maximum peak in the emission spectrum range of 430 nm to 490 nm, white light can be produced by mixing the blue excitation light with the yellow light from the phosphor. Furthermore, when the light emitted by the LED chip 51 has a maximum peak in the wavelength range of 450 nm to 480 nm, a highly pure white light can be produced.

[0152] The above is a description of an example of the configuration of the LED chip 51.

[0153] This embodiment can be implemented by appropriately combining at least a part of it with other embodiment modes described in this specification.

[0154] While the first embodiment uses a rectangular sapphire substrate, the fourth embodiment uses a single-crystal silicon substrate. When a single-crystal silicon substrate is used, it is possible to form a driving circuit for a light-emitting diode (e.g., a demultiplexer circuit or a digital-to-analog conversion circuit) and also a driving circuit for a sensor.

[0155] 8A1 shows a perspective view of the single-crystal silicon substrate 71R. The red LED chip has a single-crystal silicon substrate 71R on which a semiconductor layer including an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, an electrode functioning as a cathode, and an electrode functioning as an anode are formed.

[0156] A plurality of red LED chips are formed on the single crystal silicon substrate 71R, and a plurality of red LED chips can be fabricated by dividing the single crystal silicon substrate 71R along the LED chip sections.

[0157] 8A2 shows a perspective view of the single-crystal silicon substrate 71G. The green LED chip has a single-crystal silicon substrate 71G on which semiconductor layers including an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, etc., an electrode functioning as a cathode, and an electrode functioning as an anode are formed.

[0158] A plurality of green LED chips are formed on the single crystal silicon substrate 71G, and a plurality of green LED chips can be fabricated by dividing the single crystal silicon substrate 71G along the LED chip sections.

[0159] 8A3 shows a perspective view of the single-crystal silicon substrate 71B. The blue LED chip has a single-crystal silicon substrate 71B on which a semiconductor layer including an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, an electrode functioning as a cathode, and an electrode functioning as an anode are formed.

[0160] A plurality of blue LED chips are formed on the single crystal silicon substrate 71B, and a plurality of blue LED chips can be fabricated by dividing the single crystal silicon substrate 71B along the LED chip sections.

[0161] A CMOS image sensor is formed on the single-crystal silicon substrate 71S. The CMOS image sensor can be fabricated using known techniques. A top-illuminated CMOS image sensor is used. A light-receiving region 82 is also formed on the single-crystal silicon substrate 71S. A microlens or a colored layer may be provided in an area overlapping the light-receiving region 82.

[0162] The red LED chip, green LED chip, and blue LED chip are mounted so as not to overlap with the light receiving area 82. Fig. 8B is a perspective view showing how each light emitting diode is picked up one by one and mounted on the single crystal silicon substrate 71S.

[0163] Furthermore, the single-crystal silicon substrate 71S is provided with terminal electrodes and drive circuits electrically connected to the terminal electrodes for mounting red, green, and blue LED chips, respectively. Of course, the single-crystal silicon substrate 71S may also be provided with a drive circuit for the CMOS sensor. Alternatively, these drive circuits may be formed on separate semiconductor substrates, and the semiconductor substrates may be bonded together for electrical connection.

[0164] For example, a single crystal silicon substrate on which a driver circuit is formed using a planar transistor as shown in Fig. 9A may be bonded. Alternatively, a single crystal silicon substrate on which a driver circuit is formed using a fin transistor may be bonded.

[0165] 9B, the transistor may have a silicon thin film semiconductor layer 545. The semiconductor layer 545 may be, for example, single crystal silicon (SOI (Silicon on Insulator)) formed on an insulating layer 546 on a silicon substrate 211.

[0166] [Structure Example of OS Transistor] Alternatively, a single crystal silicon substrate on which an OS transistor is provided and a driver circuit is formed may be bonded to the single crystal silicon substrate.

[0167] 10A illustrates the details of an OS transistor. The OS transistor illustrated in FIG. 10A has a self-aligned structure in which an insulating layer is provided over a stack of an oxide semiconductor layer and a conductive layer, and a source electrode 705 and a drain electrode 706 are formed by providing openings that reach the oxide semiconductor layer.

[0168] The OS transistor can have a structure including a channel formation region, a source region 703, and a drain region 704 formed in an oxide semiconductor layer, as well as a gate electrode 701 and a gate insulating film 702. At least the gate insulating film 702 and the gate electrode 701 are provided in the opening. An oxide semiconductor layer 707 may be further provided in the opening.

[0169] As shown in FIG. 10B, the OS transistor may have a self-aligned structure in which a source region 703 and a drain region 704 are formed in a semiconductor layer using a gate electrode 701 as a mask.

[0170] Alternatively, as shown in FIG. 10C, it may be a non-self-aligned top-gate transistor having a region where the source electrode 705 or the drain electrode 706 overlaps with the gate electrode 701 .

[0171] Although the OS transistor has a back gate 535, it may not necessarily have a back gate. The back gate 535 may be electrically connected to the front gate of a transistor provided opposite to the back gate 535, as shown in the cross-sectional view of the transistor in the channel width direction in FIG. 10D . Note that FIG. 10D illustrates the cross section taken along line B1-B2 in FIG. 10A as an example, but the same applies to transistors with other structures. Furthermore, a fixed potential different from that of the front gate may be supplied to the back gate 535.

[0172] As a semiconductor material for an OS transistor, a metal oxide having an energy gap of 2 eV or more, preferably 2.5 eV or more, more preferably 3 eV or more can be used. A typical example is an oxide semiconductor containing indium, such as CAAC-OS or CAC-OS, which will be described later. CAAC-OS has stable atoms constituting the crystal, making it suitable for transistors in which reliability is important. Furthermore, CAC-OS exhibits high mobility and is therefore suitable for transistors that operate at high speed.

[0173] Because of the large energy gap of the semiconductor layer, OS transistors exhibit extremely low off-state current of several yA / μm (current value per μm of channel width). Furthermore, OS transistors have characteristics different from Si transistors, such as the absence of impact ionization, avalanche breakdown, and short-channel effects, and can form highly reliable circuits with high breakdown voltage. Furthermore, OS transistors are less susceptible to variations in electrical characteristics due to non-uniformity in crystallinity, which is a problem in Si transistors.

[0174] A semiconductor layer included in an OS transistor can be, for example, a film represented by an In-M-Zn-based oxide containing indium, zinc, and M (one or more metals such as aluminum, titanium, gallium, germanium, yttrium, zirconium, lanthanum, cerium, tin, neodymium, or hafnium). The In-M-Zn-based oxide can be typically formed by a sputtering method. Alternatively, it may be formed by an atomic layer deposition (ALD) method.

[0175] The atomic ratio of the metal elements in a sputtering target used to form an In-M-Zn-based oxide by a sputtering method preferably satisfies In≧M and Zn≧M. Preferred atomic ratios of the metal elements in such a sputtering target are In:M:Zn=1:1:1, In:M:Zn=1:1:1.2, In:M:Zn=3:1:2, In:M:Zn=4:2:3, In:M:Zn=4:2:4.1, In:M:Zn=5:1:6, In:M:Zn=5:1:7, In:M:Zn=5:1:8, etc. The atomic ratios of the semiconductor layer to be formed each include a variation of plus or minus 40% of the atomic ratio of the metal elements contained in the sputtering target.

[0176] For the semiconductor layer, an oxide semiconductor with a low carrier density is used. For example, the semiconductor layer has a carrier density of 1×10 １７ / cm ３ Below 1 × 10, preferably １５ / cm ３ More preferably, 1×10 １３ / cm ３ Less than 1×10, more preferably 1×10 １１ / cm ３ More preferably, 1×10 １０ / cm ３ is less than 1×10 −９ / cm ３ The above-described oxide semiconductors can be used. Such oxide semiconductors are called high-purity intrinsic or substantially high-purity intrinsic oxide semiconductors. Such oxide semiconductors have a low density of defect states and stable characteristics.

[0177] Note that the present invention is not limited to these, and an appropriate composition may be used depending on the required semiconductor characteristics and electrical characteristics (field-effect mobility, threshold voltage, etc.) of the transistor. In order to obtain the required semiconductor characteristics of the transistor, it is preferable to appropriately set the carrier density, impurity concentration, defect density, atomic ratio of metal element to oxygen, interatomic distance, density, and the like of the semiconductor layer.

[0178] When silicon or carbon, which is one of the Group 14 elements, is contained in the oxide semiconductor constituting the semiconductor layer, oxygen vacancies increase, resulting in n-type conductivity. Therefore, the concentration of silicon or carbon in the semiconductor layer (concentration obtained by secondary ion mass spectrometry) is set to 2×10 １８ atoms / cm ３ Below 2 × 10, preferably １７ atoms / cm ３ The following applies.

[0179] In addition, when an alkali metal or alkaline earth metal is bonded to an oxide semiconductor, carriers may be generated, which may increase the off-state current of a transistor. Therefore, the concentration of the alkali metal or alkaline earth metal in the semiconductor layer (concentration obtained by secondary ion mass spectrometry) is set to 1×10 １８ atoms / cm ３ Below 2 × 10, preferably １６ atoms / cm ３ Do the following:

[0180] Furthermore, when nitrogen is contained in the oxide semiconductor constituting the semiconductor layer, electrons serving as carriers are generated, increasing the carrier density and making the semiconductor layer more likely to be n-type. As a result, a transistor using an oxide semiconductor containing nitrogen is likely to have normally-on characteristics. Therefore, the nitrogen concentration in the semiconductor layer (concentration obtained by secondary ion mass spectrometry) is 5×10 １８ atoms / cm ３ It is preferable to do the following:

[0181] Furthermore, if hydrogen is contained in an oxide semiconductor constituting a semiconductor layer, it may react with oxygen bonded to metal atoms to form water, which may form oxygen vacancies in the oxide semiconductor. If oxygen vacancies are present in the channel formation region of an oxide semiconductor, the transistor may exhibit normally-on characteristics. Furthermore, defects in which hydrogen enters the oxygen vacancies may function as donors and generate electrons that serve as carriers. Furthermore, some of the hydrogen may bond with oxygen that is bonded to metal atoms to generate electrons that serve as carriers. Therefore, a transistor using an oxide semiconductor containing a large amount of hydrogen is likely to exhibit normally-on characteristics.

[0182] A defect in which hydrogen is introduced into an oxygen vacancy can function as a donor in an oxide semiconductor. However, it is difficult to quantitatively evaluate such defects. Therefore, oxide semiconductors are sometimes evaluated using carrier concentration instead of donor concentration. Therefore, in this specification and the like, a carrier concentration assuming a state in which no electric field is applied may be used as a parameter of an oxide semiconductor instead of donor concentration. In other words, the "carrier concentration" described in this specification and the like may be rephrased as "donor concentration."

[0183] Therefore, it is preferable that the hydrogen concentration in the oxide semiconductor be reduced as much as possible. Specifically, the hydrogen concentration in the oxide semiconductor measured by secondary ion mass spectrometry (SIMS) is set to 1×10 ２０ atoms / cm ３ less than 1×10 １９ atoms / cm ３ less than 5×10 １８ atoms / cm ３ less than 1×10 １８ atoms / cm ３ When an oxide semiconductor in which impurities such as hydrogen are sufficiently reduced is used for a channel formation region of a transistor, stable electrical characteristics can be obtained.

[0184] The semiconductor layer may have, for example, a non-single-crystal structure. Examples of the non-single-crystal structure include a c-axis aligned crystalline oxide semiconductor (CAAC-OS) having crystals oriented along the c-axis, a polycrystalline structure, a microcrystalline structure, and an amorphous structure. Among non-single-crystal structures, an amorphous structure has the highest density of defect states, and a CAAC-OS has the lowest density of defect states.

[0185] An amorphous oxide semiconductor film has, for example, a disordered atomic arrangement and does not contain any crystalline components, or has, for example, a completely amorphous structure and does not contain any crystalline parts.

[0186] The semiconductor layer may be a mixed film including two or more of an amorphous region, a microcrystalline region, a polycrystalline region, a CAAC-OS region, and a single-crystal region. The mixed film may have a single layer structure or a stacked layer structure including two or more of the above-described regions.

[0187] The structure of a cloud-aligned composite (CAC)-OS, which is one mode of a non-single-crystal semiconductor layer, will be described below.

[0188] CAC-OS is a material in which, for example, elements constituting an oxide semiconductor are unevenly distributed in a size of 0.5 nm to 10 nm, preferably 1 nm to 2 nm, or in the vicinity thereof. Note that hereinafter, a state in which one or more metal elements are unevenly distributed in an oxide semiconductor and regions containing the metal elements are mixed in a size of 0.5 nm to 10 nm, preferably 1 nm to 2 nm, or in the vicinity thereof, is also referred to as a mosaic or patch state.

[0189] The oxide semiconductor preferably contains at least indium, particularly indium and zinc, and may further contain one or more elements selected from aluminum, gallium, yttrium, copper, vanadium, beryllium, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, and the like.

[0190] For example, CAC-OS in In—Ga—Zn oxide (In—Ga—Zn oxide among CAC-OS may be particularly referred to as CAC-IGZO) is an indium oxide (hereinafter, InO Ｘ１ (X1 is a real number greater than 0).) or indium zinc oxide (hereinafter referred to as In Ｘ２ Zn Ｙ２ O Ｚ２ (X2, Y2, and Z2 are real numbers greater than 0.) and gallium oxide (hereinafter, GaO Ｘ３ (X3 is a real number greater than 0).) or gallium zinc oxide (hereinafter referred to as GaＸ４ Zn Ｙ４ O Ｚ４ (X4, Y4, and Z4 are real numbers greater than 0).) The material is separated into a mosaic structure, and the mosaic structure of InO Ｘ１ , or In Ｘ２ Zn Ｙ２ O Ｚ２ However, the structure is such that the particles are uniformly distributed in the film (hereinafter also referred to as a cloud-like structure).

[0191] That is, CAC-OS is Ｘ３ The region where In is the main component and Ｘ２ Zn Ｙ２ O Ｚ２ , or InO Ｘ１ In this specification, for example, when the atomic ratio of In to the element M in the first region is larger than the atomic ratio of In to the element M in the second region, the first region is said to have a higher In concentration than the second region.

[0192] IGZO is a common name and may refer to a compound of In, Ga, Zn, and O. A typical example is InGaO ３ (ZnO) ｍ１ (m1 is a natural number), or In （１＋ｘ０） Ga （１−ｘ０） O ３ (ZnO) ｍ０ (-1≦x0≦1, m0 is an arbitrary number).

[0193] The crystalline compound has a single crystal structure, a polycrystalline structure, or a CAAC structure. The CAAC structure is a crystal structure in which multiple IGZO nanocrystals have a c-axis orientation and are connected without being oriented in the a-b plane.

[0194] On the other hand, CAC-OS refers to a material structure of an oxide semiconductor. CAC-OS refers to a material structure containing In, Ga, Zn, and O, in which some regions observed as nanoparticles mainly composed of Ga and some regions observed as nanoparticles mainly composed of In are randomly dispersed in a mosaic pattern. Therefore, in CAC-OS, the crystal structure is a secondary element.

[0195] Note that the CAC-OS does not include a stacked structure of two or more films with different compositions, for example, a two-layer structure including a film containing In as the main component and a film containing Ga as the main component.

[0196] In addition, GaO Ｘ３ The region where In is the main component and Ｘ２ Zn Ｙ２ O Ｚ２ , or InO Ｘ１ In some cases, a clear boundary between the region where the main component is the chromatic aberration and the region where the chromatic aberration is the main component may not be observed.

[0197] When one or more elements selected from aluminum, yttrium, copper, vanadium, beryllium, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium are contained instead of gallium, the CAC-OS has a structure in which some regions observed to be nanoparticles containing the metal element as the main component and some regions observed to be nanoparticles containing In as the main component are randomly dispersed in a mosaic pattern.

[0198] The CAC-OS can be formed by sputtering, for example, under the condition that the substrate is not intentionally heated. When the CAC-OS is formed by sputtering, any one or more of an inert gas (typically argon), oxygen gas, and nitrogen gas may be used as the deposition gas. The lower the flow rate ratio of oxygen gas to the total flow rate of deposition gas during deposition, the more preferable it is. For example, the flow rate ratio of oxygen gas is preferably 0% or more and less than 30%, and more preferably 0% or more and 10% or less.

[0199] CAC-OS has a characteristic that no clear peak is observed when measured using θ / 2θ scanning by an out-of-plane method, which is one of the X-ray diffraction (XRD) measurement methods. That is, the X-ray diffraction measurement reveals that the orientation of the measurement region in the a-b plane direction and the c-axis direction is not observed.

[0200] In addition, in an electron beam diffraction pattern obtained by irradiating CAC-OS with an electron beam (also referred to as a nanobeam electron beam) with a probe diameter of 1 nm, a ring-shaped region of high brightness (ring region) and multiple bright spots are observed in the ring region. Therefore, the electron beam diffraction pattern indicates that the crystal structure of CAC-OS has an nc (nano-crystal) structure that does not have orientation in the planar and cross-sectional directions.

[0201] For example, in the case of CAC-OS in an In—Ga—Zn oxide, EDX mapping obtained by using energy dispersive X-ray spectroscopy (EDX) revealed that GaO Ｘ３ The region where In is the main component and Ｘ２ Zn Ｙ２ O Ｚ２ , or InO Ｘ１ It can be seen that the region where the main component is the crystalline silicon is unevenly distributed and mixed.

[0202] CAC-OS has a structure different from that of an IGZO compound in which metal elements are uniformly distributed, and has properties different from those of an IGZO compound. Ｘ３ and In Ｘ２ Zn Ｙ２ O Ｚ２ , or InO Ｘ１ The structure is such that the regions are separated into a mosaic of regions each containing one of the elements as the main component and a region each containing one of the elements as the main component.

[0203] Here, In Ｘ２ Zn Ｙ２ O Ｚ２ , or InO Ｘ１ The region where is the main component is GaO Ｘ３This region has higher conductivity than the region where the main component is In. Ｘ２ Zn Ｙ２ O Ｚ２ , or InO Ｘ１ When carriers flow through the region where In is the main component, the conductivity of the oxide semiconductor is exhibited. Ｘ２ Zn Ｙ２ O Ｚ２ , or InO Ｘ１ When the region containing the main component is distributed in a cloud-like shape in the oxide semiconductor, high field-effect mobility (μ) can be achieved.

[0204] On the other hand, GaO Ｘ３ The region where the main components are In Ｘ２ Zn Ｙ２ O Ｚ２ , or InO Ｘ１ This region has higher insulating properties than the region where GaO is the main component. Ｘ３ When a region containing the above as a main component is distributed in the oxide semiconductor, leakage current can be suppressed and good switching operation can be achieved.

[0205] Therefore, when CAC-OS is used in a semiconductor element, GaO Ｘ３ Insulation caused by Ｘ２ Zn Ｙ２ O Ｚ２ , or InO Ｘ１ The conductivity due to the high on-state current (I ｏｎ ), and high field-effect mobility (μ) can be achieved.

[0206] Furthermore, semiconductor elements using the CAC-OS have high reliability, making the CAC-OS suitable as a component material for various semiconductor devices.

[0207] Conductors that can be used as wiring, electrodes, and plugs for electrical connection between devices may be made of a metal element selected from aluminum, chromium, copper, silver, gold, platinum, tantalum, nickel, titanium, molybdenum, tungsten, hafnium, vanadium, niobium, manganese, magnesium, zirconium, beryllium, indium, ruthenium, iridium, strontium, lanthanum, etc., or an alloy containing the above-mentioned metal elements as a component, or an alloy combining the above-mentioned metal elements, etc. The conductor is not limited to a single layer, and may also be made of multiple layers composed of different materials.

[0208] A display panel can be fabricated by mounting a plurality of light-emitting diodes in a row or column direction and separating the single-crystal silicon substrate 71S along the partitions so that the light-emitting diodes form a display area. Note that display panels using single-crystal silicon substrates are smaller than the size of single-crystal silicon substrates and are therefore limited to small display panels. Furthermore, a large display panel can also be realized by narrowing the spacing between adjacent display areas and arranging multiple small display panels in a row or column direction.

[0209] This embodiment can be implemented by appropriately combining at least a part of it with other embodiment modes described in this specification.

[0210] In this embodiment, an example in which an organic photodiode having an organic compound in a photoelectric conversion layer is used as the light-receiving element 212 will be described. The organic photodiode can be easily made thin, lightweight, and large in area. In addition, the organic photodiode has a high degree of freedom in shape and design, and therefore can be applied to various display devices.

[0211] 11 is a schematic cross-sectional view of a display device 50A of one embodiment of the present invention. The display device 50A includes a light-receiving region 110, a light-emitting region 190, and a light-emitting region 180. The light-emitting region 190 includes a color conversion layer 797G and a light-emitting diode included in the blue light-emitting diode 11B. The light-emitting region 180 corresponds to the color conversion layer 797G and a light-emitting diode (emitting green light) included in the blue light-emitting diode 11B.

[0212] The configurations of light-emitting region 190, light-emitting region 180, and their surroundings can be the same except for the color conversion layer. Therefore, the details of light-emitting region 190 will be described here, and a description of light-emitting region 180 will be omitted.

[0213] The light-emitting region 190 has a terminal electrode 191, a conductive layer 774, and conductive bumps 791 and 793. In the display device 50A shown in Fig. 11, the bumps 791 and 793 have different heights. When the cathode-side electrode and the anode-side electrode of the blue light-emitting diode 11B have the same height, the bumps 791 and 793 can have approximately the same height.

[0214] The light receiving region 110 includes a pixel electrode 111 , a common layer 112 , a photoelectric conversion layer 113 , a common layer 114 , and a common electrode 115 .

[0215] The pixel electrode 111, the terminal electrode 191, the common layer 112, the photoelectric conversion layer 113, the common layer 114, and the common electrode 115 may each have a single layer structure or a laminated structure.

[0216] The pixel electrode 111, the terminal electrode 191, and the conductive layer 774 are located over the insulating layer 214. The pixel electrode 111, the terminal electrode 191, and the conductive layer 774 can be formed using the same material and in the same process.

[0217] The common layer 112 is located on the pixel electrode 111. The common layer 112 is a layer that is used in common by the light receiving elements 212 arranged in each pixel.

[0218] The photoelectric conversion layer 113 has a region overlapping with the pixel electrode 111 via the common layer 112. The photoelectric conversion layer 113 includes a first organic compound.

[0219] The common layer 114 is located on the common layer 112 and the photoelectric conversion layer 113. The common layer 114 is a layer that is used in common by the light receiving elements 212 arranged in each pixel.

[0220] The common electrode 115 has an area overlapping with the pixel electrode 111 via the common layer 112, the photoelectric conversion layer 113, and the common layer 114. The common electrode 115 is a layer used in common by the light-receiving elements 212 arranged in each pixel.

[0221] In the display device of this embodiment, an organic compound is used for the photoelectric conversion layer 113 of the light-receiving element 212. In addition, the light-emitting region 190 and the light-receiving region 110 can be formed on the same substrate. Therefore, the light-receiving region 110 can be built into the display device.

[0222] The display device 50A has a light-receiving region 110, a light-emitting region 190, a transistor 41, a transistor 42, etc. between a pair of substrates (an insulating substrate 151 and an insulating substrate 152).

[0223] A glass substrate, a quartz substrate, or a plastic film can be used as the insulating substrate 151 and the insulating substrate 152. Examples of the plastic film that can be used include polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resins (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamideimide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, and cellulose nanofiber.

[0224] In the light-receiving region 110, the common layer 112, photoelectric conversion layer 113, and common layer 114, which are respectively located between the pixel electrode 111 and the common electrode 115, can also be referred to as organic layers (layers containing an organic compound). The pixel electrode 111 preferably has a function of reflecting near-infrared light. The common electrode 115 has a function of transmitting visible light and near-infrared light.

[0225] The light receiving element 212 has a function of detecting light. Specifically, the light receiving element 212 is a photoelectric conversion element that converts incident light 22 into an electrical signal.

[0226] A light-shielding layer 148 is provided on the surface of substrate 152 facing substrate 151. Light-shielding layer 148 has openings at positions overlapping with light-receiving region 110 and light-emitting region 190. By providing light-shielding layer 148, the range in which light is detected by light-receiving region 110 can be controlled.

[0227] The light-shielding layer 148 may be made of a material that blocks light emitted by the light-emitting diode 11B. The light-shielding layer 148 preferably absorbs visible light and near-infrared light. The light-shielding layer 148 may be made of, for example, a metal material or a resin material containing a pigment (such as carbon black) or a dye. The light-shielding layer 148 may have a laminated structure of red, green, and blue color filters.

[0228] Furthermore, a filter 149 that cuts off light with wavelengths shorter than the wavelength of light (near-infrared light) received by the light-receiving element 212 is preferably provided in the opening of the light-shielding layer 148 at a position overlapping the light-receiving region 110. Examples of the filter 149 include a long-pass filter that cuts off light with wavelengths shorter than near-infrared light, and a band-pass filter that cuts off wavelengths in at least the visible light range. Examples of filters that cut off visible light include resin films containing dyes and semiconductor films such as amorphous silicon thin films. By providing the filter 149, it is possible to suppress the incidence of visible light on the light-receiving element 212, enabling near-infrared light to be sensed with low noise.

[0229] The filter 149 may be stacked on the light receiving element 212 .

[0230] Alternatively, the filter 149 may have a lens shape. The lens-type filter 149 is a convex lens having a convex surface facing the substrate 151. The filter 149 may be disposed so that the convex surface faces the substrate 152. When both the light-shielding layer 148 and the lens-type filter 149 are formed on the same surface of the substrate 152, the order of formation does not matter.

[0231] Furthermore, a configuration may be adopted in which the filter 149 is not provided. If the light receiving element 212 has characteristics such that it has no sensitivity to visible light or has a sufficiently higher sensitivity to near-infrared light than visible light, the filter 149 can be omitted. In this case, a lens having a shape similar to that of the lens-type filter 149 may be provided so as to overlap the light receiving element 212. The lens may be formed from a material that transmits visible light.

[0232] 11, the light receiving region 110 can sense light 22 that is reflected by an object 60 such as a finger, out of light 21 emitted by the light emitting diode 11B. However, there are cases where part of the light emitted by the light emitting diode 11B is reflected within the display device 50A and enters the light receiving region 110 without passing through the object 60.

[0233] The light-shielding layer 148 can suppress the influence of such stray light. For example, if the light-shielding layer 148 is not provided, the light 23a emitted by the light-emitting diode 11B may be reflected by the substrate 152 or the like, and the reflected light 23b may enter the light-receiving region 110. By providing the light-shielding layer 148, the reflected light 23b can be prevented from entering the light-receiving element 212. This reduces noise and improves the light-sensing accuracy of the light-receiving element 212.

[0234] Light-emitting region 190 has a function of emitting green light. Specifically, light-emitting diode 11B is an electroluminescent device that emits blue light toward substrate 152 when a voltage is applied between terminal electrode 191 and conductive layer 774, and emits green light 21 by passing through color conversion layer 797G.

[0235] In light-emitting region 190, color conversion layer 797G is provided on substrate 152 facing substrate 151 at a position overlapping light-emitting diode 11B. In light-emitting region 180, color conversion layer 797R is provided on substrate 152 facing substrate 151 at a position overlapping light-emitting diode 11B.

[0236] In this embodiment, an example in which a blue light-emitting diode 11B is used has been shown, but this is not particularly limited. When three types of light-emitting diodes 11R, 11B, and 11G are used, it is not necessary to provide a color conversion layer. Also, a light-emitting diode that emits ultraviolet light can be used instead of the light-emitting diode 11B. When a light-emitting diode that emits ultraviolet light is used, a color conversion layer that can convert the color to white light and a colored layer may be laminated. When ultraviolet light passes through the color conversion layer, white light is emitted, and when it passes through the colored layer that transmits red light, it is emitted toward the display surface as red light.

[0237] At least a part of the circuit electrically connected to the light receiving element 212 is preferably formed using the same material and in the same process as the circuit electrically connected to the light emitting diode 11B, which allows the display device to be thinner and the manufacturing process to be simplified compared to when the two circuits are formed separately.

[0238] The light receiving element 212 is preferably covered with a protective layer 195. The protective layer 195 and the substrate 152 are bonded together by an adhesive layer 142. The adhesive layer 142 is preferably made of a material with high optical transparency so as to allow emitted light to pass through.

[0239] In addition, in the light-emitting diode 11B, the spaces between adjacent light-emitting diodes are filled with adhesive layer 142, and substrate 152 and substrate 151 are bonded together.

[0240] Moreover, the light-shielding layer 148 may not be provided.

[0241] The substrate 152 may be an optical member such as a scattering plate, an input device such as a touch sensor panel, or a configuration in which two or more of these are stacked.

[0242] The pixel electrode 111 is electrically connected to the source or drain of the transistor 41 through an opening provided in the insulating layer 214 .

[0243] The terminal electrode 191 is electrically connected to the source or drain of the transistor 42 through an opening provided in the insulating layer 214. The transistor 42 has a function of controlling the driving of the light-emitting diode 11B.

[0244] The transistor 41 and the transistor 42 are provided on the same layer (substrate 151 in FIG. 11).

[0245] [Example of Transistor Configuration] Hereinafter, an example of the cross-sectional configuration of the transistors 41 and 42 that can be applied to the display device 50A will be described.

[0246] Configuration Example 1 FIG. 12A is a cross-sectional view including a transistor 410. FIG.

[0247] The transistor 410 is provided over a substrate 401 and has polycrystalline silicon in its semiconductor layer. For example, the transistor 410 corresponds to the transistor 42. The transistor 42 corresponds to the transistor 251 in the circuit of FIG. 6A. That is, FIG. 12A illustrates an example in which one of the source and the drain of the transistor 410 is electrically connected to a light-emitting diode. Note that a transistor including low-temperature polysilicon (LTPS) (hereinafter also referred to as an LTPS transistor) can be used as one of the transistors having polycrystalline silicon in its semiconductor layer. The LTPS transistor has high field-effect mobility and favorable frequency characteristics.

[0248] The transistor 410 includes a semiconductor layer 411, an insulating layer 412, a conductive layer 413, and the like. The semiconductor layer 411 includes a channel formation region 411i and a low-resistance region 411n. The semiconductor layer 411 includes silicon. The semiconductor layer 411 preferably includes polycrystalline silicon. A part of the insulating layer 412 functions as a gate insulating layer. A part of the conductive layer 413 functions as a gate electrode.

[0249] Note that the semiconductor layer 411 can also include a metal oxide (also referred to as an oxide semiconductor) that exhibits semiconductor characteristics. In this case, the transistor 410 can be called an OS transistor.

[0250] The low-resistance region 411n is a region containing an impurity element. For example, when the transistor 410 is an n-channel transistor, phosphorus, arsenic, or the like may be added to the low-resistance region 411n. On the other hand, when the transistor 410 is a p-channel transistor, boron, aluminum, or the like may be added to the low-resistance region 411n. Furthermore, in order to control the threshold voltage of the transistor 410, the above-mentioned impurities may be added to the channel formation region 411i.

[0251] An insulating layer 421 is provided over a substrate 401. A semiconductor layer 411 is provided over the insulating layer 421. An insulating layer 412 is provided to cover the semiconductor layer 411 and the insulating layer 421. A conductive layer 413 is provided over the insulating layer 412 so as to overlap with the semiconductor layer 411.

[0252] An insulating layer 422 is provided to cover the conductive layer 413 and the insulating layer 412. A conductive layer 414a and a conductive layer 414b are provided over the insulating layer 422. The conductive layer 414a and the conductive layer 414b are electrically connected to the low-resistance region 411n through openings provided in the insulating layer 422 and the insulating layer 412. A part of the conductive layer 414a functions as one of the source electrode and the drain electrode, and a part of the conductive layer 414b functions as the other of the source electrode and the drain electrode. An insulating layer 423 is provided to cover the conductive layer 414a, the conductive layer 414b, and the insulating layer 422.

[0253] A conductive layer 427 functioning as a pixel electrode is provided over the insulating layer 423. The conductive layer 427 is provided over the insulating layer 423 and is electrically connected to the conductive layer 414b in an opening provided in the insulating layer 423. Although not shown here, an LED can be mounted on a driver circuit by electrically connecting an electrode of the LED onto the conductive layer 427.

[0254] 12B shows a transistor 410a having a pair of gate electrodes, which is different from the transistor 410a shown in FIG. 12A mainly in that a conductive layer 415 and an insulating layer 416 are included.

[0255] The conductive layer 415 is provided over the insulating layer 421. An insulating layer 416 is provided to cover the conductive layer 415 and the insulating layer 421. The semiconductor layer 411 is provided so that at least a channel formation region 411i overlaps with the conductive layer 415 with the insulating layer 416 interposed therebetween.

[0256] 12B, part of the conductive layer 413 functions as a first gate electrode, part of the conductive layer 415 functions as a second gate electrode, part of the insulating layer 412 functions as a first gate insulating layer, and part of the insulating layer 416 functions as a second gate insulating layer.

[0257] Here, when the first gate electrode and the second gate electrode are electrically connected, the conductive layer 413 and the conductive layer 415 may be electrically connected through openings provided in the insulating layers 412 and 416 in a region not shown. When the second gate electrode and the source or drain are electrically connected, the conductive layer 414a or the conductive layer 414b may be electrically connected to the conductive layer 415 through openings provided in the insulating layers 422, 412, and 416 in a region not shown.

[0258] When LTPS transistors are used for all the transistors constituting a pixel, the transistor 410 illustrated in Fig. 12A or the transistor 410a illustrated in Fig. 12B can be used. In this case, the transistor 410a may be used for all the transistors constituting a pixel, the transistor 410 may be used for all the transistors, or the transistor 410a and the transistor 410 may be used in combination.

[0259] [Structure Example 3] Hereinafter, a structure example including both a transistor in which silicon is used for a semiconductor layer and a transistor in which a metal oxide is used for a semiconductor layer will be described.

[0260] FIG. 12C shows a cross-sectional schematic diagram including transistor 410a and transistor 450.

[0261] The transistor 410a can be configured as in Structure Example 2. Note that although the example using the transistor 410a is shown here, a structure including the transistor 410 and the transistor 450 may be used, or a structure including all of the transistors 410, 410a, and 450 may be used.

[0262] The transistor 450 is a transistor in which a metal oxide is used for a semiconductor layer. The configuration shown in Fig. 12C is an example in which the transistor 450 corresponds to the transistor 436 in the circuit of Fig. 6A and the transistor 410a corresponds to the transistor 251. That is, Fig. 12C is an example in which one of the source and drain of the transistor 410a is electrically connected to the conductive layer 427 that is electrically connected to the electrode of the LED.

[0263] FIG. 12C shows an example in which the transistor 450 has a pair of gates.

[0264] The transistor 450 includes a conductive layer 455, an insulating layer 422, a semiconductor layer 451, an insulating layer 452, a conductive layer 453, and the like. Part of the conductive layer 453 functions as a first gate of the transistor 450, and part of the conductive layer 455 functions as a second gate of the transistor 450. In this case, part of the insulating layer 452 functions as a first gate insulating layer of the transistor 450, and part of the insulating layer 422 functions as a second gate insulating layer of the transistor 450.

[0265] The conductive layer 455 is provided over the insulating layer 412. The insulating layer 422 is provided to cover the conductive layer 455. The semiconductor layer 451 is provided over the insulating layer 422. The insulating layer 452 is provided to cover the semiconductor layer 451 and the insulating layer 422. The conductive layer 453 is provided over the insulating layer 452 and has a region overlapping with the semiconductor layer 451 and the conductive layer 455.

[0266] An insulating layer 426 is provided to cover the insulating layer 452 and the conductive layer 453. A conductive layer 454a and a conductive layer 454b are provided over the insulating layer 426. The conductive layer 454a and the conductive layer 454b are electrically connected to the semiconductor layer 451 through openings provided in the insulating layer 426 and the insulating layer 452. A part of the conductive layer 454a functions as one of the source electrode and the drain electrode, and a part of the conductive layer 454b functions as the other of the source electrode and the drain electrode. An insulating layer 423 is provided to cover the conductive layer 454a, the conductive layer 454b, and the insulating layer 426.

[0267] Here, the conductive layers 414a and 414b electrically connected to the transistor 410a are preferably formed by processing the same conductive film as the conductive layers 454a and 454b. Figure 12C shows a configuration in which the conductive layers 414a, 414b, 454a, and 454b are formed on the same surface (i.e., in contact with the top surface of the insulating layer 426) and contain the same metal element. In this case, the conductive layers 414a and 414b are electrically connected to the low-resistance region 411n through openings provided in the insulating layer 426, the insulating layer 452, the insulating layer 422, and the insulating layer 412. This is preferable because it simplifies the manufacturing process.

[0268] The conductive layer 413 functioning as the first gate electrode of the transistor 410a and the conductive layer 455 functioning as the second gate electrode of the transistor 450 are preferably formed by processing the same conductive film. In Figure 12C, the conductive layer 413 and the conductive layer 455 are formed on the same surface (i.e., in contact with the top surface of the insulating layer 412) and contain the same metal element. This is preferable because it simplifies the manufacturing process.

[0269] In FIG. 12C , the insulating layer 452 functioning as the first gate insulating layer of the transistor 450 covers the end portion of the semiconductor layer 451; however, as in the transistor 450a shown in FIG. 12D , the insulating layer 452 may be processed so that the top surface shape thereof matches or substantially matches the top surface shape of the conductive layer 453.

[0270] 12C and 12D , a semiconductor device with low power consumption and high driving capability can be realized by using a structure including both a transistor in which silicon is used for a semiconductor layer and a transistor in which a metal oxide is used for a semiconductor layer. A structure in which an LTPS transistor and an OS transistor are combined is sometimes referred to as LTPO. As a more preferred example, an OS transistor is preferably used as a transistor that functions as a switch for controlling conduction / non-conduction between wirings, and an LTPS transistor is preferably used as a transistor for controlling current.

[0271] In this specification, the phrase "top surface shapes generally match" refers to the overlap of at least a portion of the contours between stacked layers. For example, this includes cases where the upper and lower layers are processed using the same mask pattern or a portion of the same mask pattern. However, strictly speaking, the contours may not overlap, and the upper layer may be located inside the lower layer, or outside the lower layer. In these cases, the phrase "top surface shapes generally match" also applies.

[0272] Note that although the example in which the transistor 410a corresponds to the transistor 251 and is electrically connected to the pixel electrode is shown here, the present invention is not limited to this. For example, the transistor 450 or the transistor 450a may correspond to the transistor 251. In this case, the transistor 410a corresponds to the transistor 436, the transistor 434, or another transistor.

[0273] This embodiment can be implemented by appropriately combining at least a part of it with other embodiment modes described in this specification.

[0274] Embodiment 6 In this embodiment, electronic devices to which a semiconductor device according to one embodiment of the present invention can be applied will be described.

[0275] The semiconductor device according to one embodiment of the present invention can be applied to a display portion of an electronic device. Therefore, an electronic device with high display quality, extremely high resolution, or high reliability can be realized.

[0276] Examples of electronic devices using a semiconductor device or the like according to one embodiment of the present invention include display devices such as televisions and monitors, lighting devices, desktop or notebook personal computers, word processors, and DVD (Digital Versatile Examples of such equipment include image playback devices that play back still images or videos stored on recording media such as a CD (disc), portable CD players, radios, tape recorders, headphone stereos, stereos, table clocks, wall clocks, cordless telephone handsets, transceivers, car phones, mobile phones, personal digital assistants, tablet terminals, portable game machines, fixed game machines such as pachinko machines, calculators, electronic organizers, e-book terminals, electronic translators, voice input devices, video cameras, digital still cameras, electric shavers, high-frequency heating devices such as microwave ovens, air conditioning equipment such as electric rice cookers, electric washing machines, electric vacuum cleaners, hot water heaters, electric fans, hair dryers, air conditioners, humidifiers, and dehumidifiers, dishwashers, dish dryers, clothes dryers, futon dryers, electric refrigerators, electric freezers, electric refrigerator-freezers, DNA storage freezers, flashlights, and tools such as chainsaws, smoke detectors, and medical equipment such as dialysis machines. Further examples include industrial equipment such as emergency lights, traffic lights, conveyor belts, elevators, escalators, industrial robots, power storage systems, and power storage devices for power leveling and smart grids. Mobile bodies propelled by fuel-powered engines or electric motors powered by power from power storage devices may also be included in the category of electronic devices. Examples of such mobile bodies include electric vehicles (EVs), hybrid vehicles (HVs) equipped with both internal combustion engines and electric motors, plug-in hybrid vehicles (PHVs), tracked vehicles in which the tires and wheels of these vehicles are replaced with tracks, mopeds including electrically assisted bicycles, motorcycles, electric wheelchairs, golf carts, small or large ships, submarines, helicopters, aircraft, rockets, artificial satellites, space probes, planetary probes, and spaceships.

[0277] An electronic device according to one embodiment of the present invention may include a secondary battery (battery), and it is preferable that the secondary battery can be charged using contactless power transmission.

[0278] Examples of secondary batteries include lithium ion secondary batteries, nickel-metal hydride batteries, nickel-cadmium batteries, organic radical batteries, lead-acid batteries, air secondary batteries, nickel-zinc batteries, and silver-zinc batteries.

[0279] An electronic device according to one embodiment of the present invention may include an antenna. By receiving a signal through the antenna, images, information, and the like can be displayed on a display portion. When the electronic device includes an antenna and a secondary battery, the antenna may be used for contactless power transmission.

[0280] An electronic device according to one embodiment of the present invention may have a sensor (including a function for measuring force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays).

[0281] An electronic device according to one embodiment of the present invention can have various functions, such as a function to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date, time, etc., a function to execute various software (programs), a wireless communication function, a function to read programs or data recorded on a recording medium, etc.

[0282] Furthermore, electronic devices having multiple display units can have a function of mainly displaying image information on one part of the display units and mainly displaying text information on another part, or a function of displaying a stereoscopic image by displaying an image taking into account parallax on the multiple display units. Furthermore, electronic devices having an image receiving unit can have a function of capturing a still image or a video, a function of automatically or manually correcting the captured image, a function of storing the captured image in a recording medium (external or built in the electronic device), a function of displaying the captured image on the display unit, etc. Note that the functions of the electronic device of one embodiment of the present invention are not limited to these, and can have various functions.

[0283] The semiconductor device according to one embodiment of the present invention can display high-resolution images. Therefore, the semiconductor device can be suitably used in portable electronic devices, wearable electronic devices, e-book readers, and the like. For example, the semiconductor device can be suitably used in xR devices such as VR devices and AR devices.

[0284] FIG. 13A is a diagram showing the appearance of the camera 8000 with the viewfinder 8100 attached.

[0285] The camera 8000 includes a housing 8001, a display unit 8002, operation buttons 8003, a shutter button 8004, and the like. A detachable lens 8006 is attached to the camera 8000. Note that the lens 8006 and the housing of the camera 8000 may be integrated together.

[0286] The camera 8000 can capture an image by pressing a shutter button 8004 or touching a display portion 8002 that functions as a touch panel.

[0287] The housing 8001 has a mount with electrodes, and can be connected to a finder 8100 as well as a strobe device and the like.

[0288] The finder 8100 includes a housing 8101, a display portion 8102, a button 8103, and the like.

[0289] The housing 8101 is attached to the camera 8000 by a mount that engages with the mount of the camera 8000. The viewfinder 8100 can display an image received from the camera 8000 on a display portion 8102.

[0290] The button 8103 has a function as a power button or the like.

[0291] The semiconductor device according to one embodiment of the present invention can be applied to a display portion 8002 of a camera 8000 and a display portion 8102 of a finder 8100. Note that the finder 8100 may be built in the camera 8000. The size of the display area of ​​the display portion 8002 and the display portion 8102, that is, the screen size, is 0.5 inches to 10 inches.

[0292] FIG. 13B is a diagram showing the appearance of the head-mounted display 8200.

[0293] The head-mounted display 8200 includes a mounting portion 8201, a lens 8202, a main body 8203, a display portion 8204, and a cable 8205. The mounting portion 8201 has a built-in battery 8206.

[0294] A cable 8205 supplies power from a battery 8206 to the main body 8203. The main body 8203 includes a wireless receiver or the like and can display received video information on a display portion 8204. The main body 8203 also includes a camera and can use information on the movement of the user's eyeballs or eyelids as an input means.

[0295] The wearing unit 8201 may have a plurality of electrodes at positions that come into contact with the user, capable of detecting a current that flows in accordance with the movement of the user's eyeballs, and may have a function of recognizing the line of sight. The wearing unit 8201 may also have a function of monitoring the user's pulse based on the current that flows through the electrodes. The wearing unit 8201 may also have various sensors such as a temperature sensor, a pressure sensor, and an acceleration sensor, and may have a function of displaying biometric information of the user on the display unit 8204 and a function of changing an image displayed on the display unit 8204 in accordance with the movement of the user's head.

[0296] The semiconductor device according to one embodiment of the present invention can be applied to the display portion 8204. The size of the display area of ​​the display portion 8204, that is, the screen size, is greater than or equal to 0.5 inches and less than or equal to 3 inches.

[0297] 13C to 13E are diagrams showing the appearance of a head mounted display 8300. The head mounted display 8300 includes a housing 8301, a display portion 8302, a band-shaped fixture 8304, and a pair of lenses 8305.

[0298] A user can view the display on the display portion 8302 through the lens 8305. Note that it is preferable to curve the display portion 8302 because the user can feel a high sense of presence. In addition, by viewing different images displayed in different regions of the display portion 8302 through the lens 8305, three-dimensional display using parallax can be performed. Note that the present invention is not limited to a configuration in which one display portion 8302 is provided, and two display portions 8302 may be provided, with one display portion provided for each eye of the user.

[0299] A semiconductor device according to one embodiment of the present invention can be applied to the display portion 8302. The semiconductor device according to one embodiment of the present invention can also achieve extremely high definition. For example, even when a display is enlarged and viewed using a lens 8305 as shown in FIG. 13E , pixels are difficult for a user to view. That is, a highly realistic image can be viewed by the display portion 8302.

[0300] 13F is a diagram showing the appearance of a goggle-type head-mounted display 8400. The head-mounted display 8400 includes a pair of housings 8401, an attachment portion 8402, and a buffer member 8403. A display portion 8404 and a lens 8405 are provided in each of the pair of housings 8401. By displaying different images on the pair of display portions 8404, three-dimensional display using parallax can be performed.

[0301] A user can view the display portion 8404 through the lens 8405. The lens 8405 has a focus adjustment mechanism, and its position can be adjusted according to the user's eyesight. The display portion 8404 is preferably a square or a horizontally long rectangle. This can enhance the sense of realism.

[0302] The attachment portion 8402 preferably has plasticity and elasticity so that it can be adjusted according to the size of the user's face and does not slip off. Furthermore, a portion of the attachment portion 8402 preferably has a vibration mechanism that functions as a bone conduction earphone. This allows the user to enjoy video and audio simply by wearing the device, without the need for separate audio equipment such as earphones or speakers. The housing 8401 may also have a function for outputting audio data via wireless communication.

[0303] The mounting portion 8402 and the buffer member 8403 are portions that come into contact with the user's face (forehead, cheeks, etc.). The close contact of the buffer member 8403 with the user's face can prevent light leakage and enhance the sense of immersion. The buffer member 8403 is preferably made of a soft material so that it can be in close contact with the user's face when the user wears the head-mounted display 8400. For example, materials such as rubber, silicone rubber, urethane, and sponge can be used. Furthermore, using a sponge or the like with its surface covered with cloth, leather (natural leather or synthetic leather), or the like can prevent gaps from forming between the user's face and the buffer member 8403, thereby effectively preventing light leakage. Furthermore, using such a material is preferable because it feels pleasant to the touch and prevents the user from feeling cold when worn in cold seasons. It is preferable that the buffer member 8403 or the mounting portion 8402, or other components that come into contact with the user's skin, are removable for easy cleaning or replacement.

[0304] 14A shows an example of a television set. A television set 7100 has a display portion 7000 built into a housing 7101. Here, the housing 7101 is supported by a stand 7103.

[0305] The semiconductor device of one embodiment of the present invention can be applied to the display portion 7000. The size of the display area of ​​the display portion 8204, that is, the screen size, is 8 inches to 100 inches.

[0306] 14A can be operated using operation switches provided on the housing 7101 and a separate remote control 7111. Alternatively, the display portion 7000 may be provided with a touch sensor, and the television set 7100 may be operated by touching the display portion 7000 with a finger or the like. The remote control 7111 may have a display portion that displays information output from the remote control 7111. Using operation keys or a touch panel provided on the remote control 7111, the channel and volume can be controlled, and an image displayed on the display portion 7000 can be controlled.

[0307] The television device 7100 is configured to include a receiver, a modem, and the like. The receiver can receive general television broadcasts. Furthermore, by connecting to a wired or wireless communication network via the modem, it is possible to perform one-way (from a sender to a receiver) or two-way (between a sender and a receiver, or between receivers, etc.) information communication.

[0308] 14B shows an example of a laptop personal computer 7200. The laptop personal computer 7200 includes a housing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, and the like. The housing 7211 includes a display portion 7000.

[0309] The semiconductor device of one embodiment of the present invention can be applied to the display portion 7000 .

[0310] 14C and 14D show an example of digital signage.

[0311] 14C includes a housing 7301, a display portion 7000, and a speaker 7303. The digital signage 7300 may further include an LED lamp, operation keys (including a power switch or an operation switch), a connection terminal, various sensors, a microphone, and the like.

[0312] 14D shows a digital signage 7400 attached to a cylindrical pillar 7401. The digital signage 7400 has a display unit 7000 provided along the curved surface of the pillar 7401.

[0313] 14C and 14D, the semiconductor device of one embodiment of the present invention can be applied to the display portion 7000.

[0314] The larger the display unit 7000, the more information can be provided at one time. Also, the larger the display unit 7000, the more easily it will attract people's attention, which can increase the advertising effectiveness of, for example, advertisements.

[0315] Applying a touch panel to the display unit 7000 is preferable because it not only displays images or videos on the display unit 7000 but also allows the user to intuitively operate it. Furthermore, when used to provide information such as route information or traffic information, the intuitive operation can improve usability.

[0316] 14C and 14D , the digital signage 7300 or the digital signage 7400 is preferably capable of wirelessly linking with an information terminal 7311 or an information terminal 7411 such as a smartphone carried by a user. For example, advertising information displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or the information terminal 7411. By operating the information terminal 7311 or the information terminal 7411, the display on the display unit 7000 can be switched.

[0317] Furthermore, the digital signage 7300 or the digital signage 7400 can be made to run a game using the screen of the information terminal 7311 or the information terminal 7411 as an operation means (controller), thereby allowing an unspecified number of users to simultaneously participate in and enjoy the game.

[0318] 14E includes a housing 7551, a display portion 7552, a microphone 7557, a speaker portion 7554, a camera 7553, an operation switch 7555, and the like. The semiconductor device according to one embodiment of the present invention can be applied to the display portion 7552. The display portion 7552 has a touch panel function. The information terminal 7550 includes an antenna, a battery, and the like inside the housing 7551. The information terminal 7550 can be used as, for example, a smartphone, a mobile phone, a tablet information terminal, a tablet personal computer, an e-book reader, or the like.

[0319] 14F shows an example of a wristwatch-type information terminal. The information terminal 7660 includes a housing 7661, a display portion 7662, a band 7663, a buckle 7664, operation switches 7665, an input / output terminal 7666, and the like. The information terminal 7660 also includes an antenna, a battery, and the like inside the housing 7661. The information terminal 7660 can execute various applications such as mobile phone calls, e-mail, document browsing and creation, music playback, internet communication, and computer games.

[0320] The display portion 7662 is also equipped with a touch sensor, and can be operated by touching the screen with a finger or a stylus. For example, an application can be started by touching an icon 7667 displayed on the display portion 7662. The operation switch 7665 can have various functions, such as time setting, power on / off operation, wireless communication on / off operation, silent mode activation / deactivation, and power saving mode activation / deactivation. For example, the functions of the operation switch 7665 can be set by an operating system incorporated in the information terminal 7660.

[0321] The information terminal 7660 can also perform short-range wireless communication according to a communication standard. For example, hands-free conversation is also possible by mutual communication with a wirelessly enabled headset. The information terminal 7660 also includes an input / output terminal 7666, and can transmit and receive data to and from other information terminals via the input / output terminal 7666. Charging can also be performed via the input / output terminal 7666. Note that charging may be performed by wireless power supply without using the input / output terminal 7666.

[0322] The structure described in this embodiment mode can be used in appropriate combination with structures described in other embodiment modes or the like.

[0323] 10: pixel, 11a: electrode, 11B: light-emitting diode, 11G: light-emitting diode, 11IR: light-emitting diode, 11R: light-emitting diode, 11UV: light-emitting diode, 11W: light-emitting diode, 13: drive circuit unit, 14: drive circuit unit, 15: circuit unit, 16: control circuit unit, 17: pixel array, 21: light, 22: light, 23a: light, 23b: reflected light, 41: transistor, 42: transistor, 50A: display device, 51: LED chip, 60: object, 71: substrate, 71B: single crystal silicon substrate, 71G: single crystal silicon substrate, 71R: single crystal silicon substrate, 71S: single crystal silicon substrate, 75: n-type semiconductor layer, 75a: n-type contact layer, 75b: n-type cladding layer, 77: light-emitting layer, 77a: barrier layer, 77b: well layer, 79: p-type semiconductor layer, 79a: p-type cladding layer, 79b: p-type contact layer, 81: semiconductor layer, 82: light-receiving region, 83: electrode, 85: electrode, 87: electrode, 89: insulating layer, 102: transistor, 102_k: transistor, 102_1: transistor, 102_2: transistor, 103: transistor, 104: transistor, 105: transistor, 108: capacitor, 110: light-receiving region region, 111: pixel electrode, 112: common layer, 113: photoelectric conversion layer, 114: common layer, 115: common electrode, 121: wiring, 122: wiring, 123: wiring, 126: wiring, 127: wiring, 127_k: wiring, 127_1: wiring, 127_2: wiring, 128: wiring, 131: wiring, 132: wiring, 133: wiring, 142: adhesive layer, 148: light-shielding layer, 149: filter, 151: substrate, 152: substrate, 180: light-emitting region, 190: light-emitting region, 191: terminal electrode, 193: light-emitting layer, 195: protective layer, 200: display panel, 200A: display panel, 200B: display panel 200C: display panel, 201: glass substrate, 202: protective substrate, 202b: color conversion layer, 202g: color conversion layer, 202G: color conversion layer, 202r: color conversion layer, 202R: color conversion layer, 203: functional layer, 203a: terminal electrode, 211: silicon substrate, 212: light receiving element, 212_k: light receiving element, 212_1: light receiving element, 212_2: light receiving element, 214: insulating layer, 220: finger, 231: drive circuit unit, 232: drive circuit unit, 236: wiring, 237: wiring, 251: transistor, 352: wiring, 401: substrate, 410: transistor, 410a: transistor,411: semiconductor layer, 411i: channel formation region, 411n: low resistance region, 412: insulating layer, 413: conductive layer, 414a: conductive layer, 414b: conductive layer, 415: conductive layer, 416: insulating layer, 421: insulating layer, 422: insulating layer, 423: insulating layer, 426: insulating layer, 427: conductive layer, 431: display pixel circuit, 433: capacitor, 434: transistor, 435: node, 436: transistor, 437: node, 438: transistor, 450: transistor, 450a: transistor, 451: semiconductor layer, 452: insulating layer, 453: conductive layer, 454a: conductive layer , 454b: conductive layer, 455: conductive layer, 535: back gate, 545: semiconductor layer, 546: insulating layer, 701: gate electrode, 702: gate insulating film, 703: source region, 704: drain region, 705: source electrode, 706: drain electrode, 707: oxide semiconductor layer, 774: conductive layer, 791: bump, 793: bump, 797G: color conversion layer, 797R: color conversion layer, 901: substrate, 902: substrate, 903: substrate, 904: single crystal silicon wafer, 7000: display unit, 7100: television device, 7101: housing, 7103: stand, 7111: remote Controller, 7200: notebook personal computer, 7211: housing, 7212: keyboard, 7213: pointing device, 7214: external connection port, 7300: digital signage, 7301: housing, 7303: speaker, 7311: information terminal, 7400: digital signage, 7401: pillar, 7411: information terminal, 7550: information terminal, 7551: housing, 7552: display unit, 7553: camera, 7554: speaker unit, 7555: operation switch, 7557: microphone, 7660: information terminal, 7661: housing, 7662: display unit, 7 663: Band, 7664: Buckle, 7665: Operation switch, 7666: Input / output terminal, 7667: Icon, 8000: Camera, 8001: Housing, 8002: Display unit, 8003: Operation button, 8004: Shutter button, 8006: Lens, 8100: Viewfinder, 8101: Housing, 8102: Display unit, 8103: Button, 8200: Head-mounted display, 8201: Mounting unit, 8202: Lens, 8203: Main body, 8204: Display unit, 8205: Cable, 8206: Battery, 8300: Head-mounted display, 8301: Housing,8302: display unit, 8304: fixture, 8305: lens, 8400: head-mounted display, 8401: housing, 8402: mounting unit, 8403: cushioning member, 8404: display unit, 8405: lens,

Claims

1. A semiconductor device having a plurality of first terminal electrodes and a plurality of second terminal electrodes on a semiconductor substrate, a light-emitting diode on the first terminal electrode, and a light-receiving element having a photoelectric conversion layer on the second terminal electrode, wherein the light-emitting diode has a first electrode and a second electrode, the first electrode overlaps the first terminal electrode, the first terminal electrode is electrically connected to a drive circuit of the light-emitting diode, the second terminal electrode is electrically connected to a drive circuit of the light-receiving element, the light-receiving element is a photodiode chip, and the light-emitting diode is a light-emitting diode chip having one terminal connected to the first electrode or the second electrode.

2. The semiconductor device according to claim 1, wherein the first electrode is electrically connected to the first terminal electrode via a connection layer.

3. The semiconductor device according to claim 1, wherein the semiconductor substrate is a single-crystalline silicon substrate.

4. The semiconductor device according to claim 1, further comprising a transistor having an oxide semiconductor layer on the semiconductor substrate and a transistor having polycrystalline silicon.

5. The semiconductor device according to claim 1, further having a color conversion layer on the light-emitting diode, and light emitted from the light-emitting diode passes through the color conversion layer.

6. a first light-emitting diode overlapping a first region of a semiconductor substrate, a second light-emitting diode overlapping a second region of the semiconductor substrate, and a third light-emitting diode overlapping a third region of the semiconductor substrate, wherein the semiconductor substrate has a fourth region adjacent to any one or more of the first region, the second region, or the third region, the fourth region of the semiconductor substrate has a photoelectric conversion layer and functions as a light-receiving element, the first region has a first electrode and a second electrode thereon, the first light-emitting diode is a light-emitting diode chip having one terminal connected to the first electrode or the second electrode, and the light-receiving element is a photodiode chip.

7. The semiconductor device according to claim 6, wherein the semiconductor substrate is a single-crystalline silicon substrate.

8. The semiconductor device according to claim 6, further comprising a transistor having an oxide semiconductor layer on the semiconductor substrate and a transistor having polycrystalline silicon.

9. The semiconductor device according to claim 6, wherein the emission colors of the first light-emitting diode, the second light-emitting diode, and the third light-emitting diode are different from each other.

10. The semiconductor device according to claim 6, further comprising a color conversion layer on the second light-emitting diode, wherein light emitted from the second light-emitting diode passes through the color conversion layer.