Display device

Abstract

The present invention provides a high-definition display device. This display device comprises a first light emitting device and a second light emitting device on an insulation surface. A first lateral insulating layer is in contact with the lateral surface of a first pixel electrode of the first light emitting device; and a second lateral insulating layer is in contact with the lateral surface of a second pixel electrode of the second light emitting device. The first light emitting device is superposed on a first colored layer, with a first color conversion layer being interposed therebetween. The first light emitting device and the second light emitting device share a common electrode. A first layer of the first light emitting device, a second layer of the second light emitting device, and a material layer that is positioned on the upper surface of an insulating layer between the first lateral insulating layer and the second lateral insulating layer have a same light emitting material, while being separated from each other.

Description

Display device, display module, electronic device, and method for manufacturing the display device

[0001] 1. Field of the Invention One embodiment of the present invention relates to a display device, a display module, and an electronic device. 2. Description of the Related Art One embodiment of the present invention relates to a manufacturing method of a display device.

[0002] One embodiment of the present invention is not limited to the above technical field, and examples of the technical field of one embodiment of the present invention include semiconductor devices, display devices, light-emitting devices, power storage devices, memory devices, electronic devices, lighting devices, input devices (e.g., touch sensors), input / output devices (e.g., touch panels), driving methods thereof, and manufacturing methods thereof.

[0003] In recent years, display devices have been expected to be used in a variety of applications. For example, applications of large display devices include home television devices (also called televisions or television receivers), digital signage, and public information displays (PIDs). In addition, development of mobile information terminals, such as smartphones and tablet terminals equipped with touch panels, is progressing.

[0004] There is also a demand for higher definition display devices. Devices requiring high-definition display devices, such as devices for virtual reality (VR), augmented reality (AR), substitutional reality (SR), and mixed reality (MR), are being actively developed.

[0005] As a display device, for example, a light-emitting device having a light-emitting device (also referred to as a light-emitting element) has been developed. A light-emitting device (also referred to as an EL device or an EL element) utilizing an electroluminescence (hereinafter referred to as EL) phenomenon has features such as being easily thin and lightweight, being capable of high-speed response to an input signal, and being capable of being driven by a DC constant voltage power supply, and is therefore applied to a display device.

[0006] Patent Document 1 discloses a display device for VR that uses an organic EL device (also called an organic EL element).

[0007] International Publication No. 2018 / 087625

[0008] An object of one embodiment of the present invention is to provide a high-resolution display device.An object of one embodiment of the present invention is to provide a highly reliable display device.

[0009] An object of one embodiment of the present invention is to provide a method for manufacturing a high-resolution display device.An object of one embodiment of the present invention is to provide a method for manufacturing a high-resolution display device.An object of one embodiment of the present invention is to provide a method for manufacturing a highly reliable display device.An object of one embodiment of the present invention is to provide a method for manufacturing a display device with high yield.

[0010] Note that the description of these problems does not preclude the existence of other problems. One embodiment of the present invention does not necessarily have to solve all of these problems. Problems other than these can be extracted from the description in the specification, drawings, and claims.

[0011] One embodiment of the present invention provides a light-emitting device including a first light-emitting device, a second light-emitting device, an insulating layer, a first sidewall insulating layer, a second sidewall insulating layer, a first color conversion layer, and a first coloring layer. The first light-emitting device includes a first pixel electrode on the insulating layer, a first layer on the first pixel electrode, and a common electrode on the first layer. The second light-emitting device includes a second pixel electrode on the insulating layer, a first layer on the second pixel electrode, and a common electrode on the first layer. The first sidewall insulating layer is a first sidewall insulating layer in contact with a side surface of the first pixel electrode, a second sidewall insulating layer in contact with a side surface of the second pixel electrode, a first color conversion layer overlapping with a first light-emitting device, a first coloring layer overlapping with the first light-emitting device via the first color conversion layer, the first coloring layer transmitting light of a wavelength longer than blue, the first layer having a first light-emitting material that emits blue light, and the first layer having a portion in contact with an upper surface of an insulating layer between the first sidewall insulating layer and the second sidewall insulating layer.

[0012] Another embodiment of the present invention includes a first light-emitting device, a second light-emitting device, a material layer, an insulating layer, a first sidewall insulating layer, a second sidewall insulating layer, a first color conversion layer, and a first coloring layer. The first light-emitting device includes a first pixel electrode over the insulating layer, a first layer over the first pixel electrode, and a common electrode over the first layer. The second light-emitting device includes a second pixel electrode over the insulating layer, a second layer over the second pixel electrode, and a common electrode over the second layer. The first sidewall insulating layer is in contact with a side surface of the first pixel electrode. a first color conversion layer overlapping the first light-emitting device; a first coloring layer overlapping the first light-emitting device via the first color conversion layer; the first coloring layer transmits light of wavelengths longer than blue; the first layer has a first light-emitting material that emits blue light; and the first layer, the second layer, and the material layer all have the same light-emitting material and are spaced apart from each other.

[0013] Preferably, any of the above display devices further includes a second colored layer that overlaps the second light-emitting device and transmits light of a color different from that of the first colored layer.

[0014] The first layer preferably further comprises a second light-emitting material that emits light with a wavelength longer than blue.

[0015] The material layer preferably contacts at least one of the side surfaces of the first sidewall insulating layer and the second sidewall insulating layer.

[0016] Preferably, the first sidewall insulating layer also contacts the side and top surfaces of the insulating layer, and the second sidewall insulating layer also contacts the side and top surfaces of the insulating layer.

[0017] The shortest distance between the first sidewall insulating layer and the second sidewall insulating layer is preferably less than 10 μm, and more preferably 1 μm or less.

[0018] The first sidewall insulating layer preferably comprises an inorganic insulating material.

[0019] Another embodiment of the present invention is a display module including a display device having any of the above structures, such as a display module to which a connector such as a flexible printed circuit (hereinafter referred to as FPC) or a tape carrier package (TCP) is attached, or a display module to which an integrated circuit (IC) is mounted by a chip-on-glass (COG) method, a chip-on-film (COF) method, or the like.

[0020] Another embodiment of the present invention is an electronic device including the above-described display module and at least one of a housing, a battery, a camera, a speaker, and a microphone.

[0021] One embodiment of the present invention is a method for manufacturing a display device, including forming a conductive film over an insulating surface and processing the conductive film to form a first pixel electrode and a second pixel electrode, forming an insulating film covering the first pixel electrode and the second pixel electrode, and processing the insulating film to form a first sidewall insulating layer in contact with a side surface of the first pixel electrode and a second sidewall insulating layer in contact with a side surface of the second pixel electrode, and exposing an upper surface of the first pixel electrode and an upper surface of the second pixel electrode, forming a first layer in contact with the upper surface of the first pixel electrode, the upper surface of the second pixel electrode, and the insulating surface, forming a common electrode in contact with the first layer, providing a first color conversion layer over the common electrode that overlaps with the first pixel electrode, and providing a first coloring layer over the first color conversion layer that overlaps with the first pixel electrode,

[0022] Another embodiment of the present invention is a method for manufacturing a semiconductor device including: forming a conductive film over an insulating surface; processing the conductive film to form a first pixel electrode and a second pixel electrode; forming an insulating film that covers the first pixel electrode and the second pixel electrode; and processing the insulating film to form a first sidewall insulating layer in contact with a side surface of the first pixel electrode and a second sidewall insulating layer in contact with a side surface of the second pixel electrode; and exposing an upper surface of the first pixel electrode and an upper surface of the second pixel electrode. A method for manufacturing a display device includes forming a first layer in contact with a top surface of a first pixel electrode, a second layer in contact with a top surface of a second pixel electrode, and a material layer in contact with an insulating surface in the same process, forming a common electrode in contact with the first layer and the second layer, disposing a first color conversion layer on the common electrode so as to overlap with the first pixel electrode, and disposing a first coloring layer on the first color conversion layer so as to overlap with the first pixel electrode, the first layer having a first light-emitting material that emits blue light. The common electrode is preferably in contact with the material layer.

[0023] According to one embodiment of the present invention, a high-definition display device can be provided. According to one embodiment of the present invention, a high-resolution display device can be provided. According to one embodiment of the present invention, a highly reliable display device can be provided.

[0024] According to one embodiment of the present invention, a method for manufacturing a high-resolution display device can be provided. According to one embodiment of the present invention, a method for manufacturing a high-resolution display device can be provided. According to one embodiment of the present invention, a method for manufacturing a highly reliable display device can be provided. According to one embodiment of the present invention, a method for manufacturing a display device with high yield can be provided.

[0025] Note that the description of these effects does not preclude the existence of other effects. One embodiment of the present invention does not necessarily have all of these effects. Effects other than these can be extracted from the description in the specification, drawings, and claims.

[0026] FIG. 1A is a top view showing an example of a display device. FIGS. 1B and 1C are cross-sectional views showing an example of a display device. FIGS. 2A to 2D are cross-sectional views showing an example of a display device. FIGS. 3A to 3C are cross-sectional views showing an example of a display device. FIGS. 4A to 4C are cross-sectional views showing an example of a display device. FIGS. 5A to 5C are cross-sectional views showing an example of a display device. FIGS. 6A and 6B are cross-sectional views showing an example of a display device. FIGS. 7A and 7B are cross-sectional views showing an example of a display device. FIGS. 8A to 8E are cross-sectional views showing an example of a manufacturing method of a display device. FIGS. 9A to 9G are views showing an example of a pixel. FIGS. 10A to 10I are views showing an example of a pixel. FIGS. 11A and 11B are perspective views showing an example of a display device. FIG. 12 is a cross-sectional view showing an example of a display device. FIG. 13 is a cross-sectional view showing an example of a display device. FIG. 14 is a cross-sectional view showing an example of a display device. FIG. 15 is a cross-sectional view showing an example of a display device. FIG. 16 is a cross-sectional view showing an example of a display device. FIG. 17 is a cross-sectional view showing an example of a display device. FIG. 18 is a perspective view showing an example of a display device. Fig. 19A is a cross-sectional view showing an example of a display device. Figs. 19B and 19C are cross-sectional views showing an example of a transistor. Figs. 20A to 20D are cross-sectional views showing an example of a display device. Figs. 21A to 21F are diagrams showing an example of a configuration of a light-emitting device. Figs. 22A to 22C are diagrams showing an example of a configuration of a light-emitting device. Figs. 23A to 23D are diagrams showing an example of an electronic device. Figs. 24A to 24F are diagrams showing an example of an electronic device. Figs. 25A to 25G are diagrams showing an example of an electronic device.

[0027] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it will be readily understood by those skilled in the art that various changes can be made in form and detail without departing from the spirit and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the description of the embodiments shown below.

[0028] In the configuration of the invention described below, the same parts or parts having similar functions are denoted by the same reference numerals in different drawings, and repeated explanations thereof will be omitted. Furthermore, when referring to similar functions, the same hatching pattern may be used and no particular reference numeral may be assigned.

[0029] Furthermore, for ease of understanding, the position, size, range, etc. of each component shown in the drawings may not represent the actual position, size, range, etc. Therefore, the disclosed invention is not necessarily limited to the position, size, range, etc. disclosed in the drawings.

[0030] The terms "film" and "layer" can be interchangeable depending on the circumstances. For example, the term "conductive layer" can be changed to the term "conductive film." Or, for example, the term "insulating film" can be changed to the term "insulating layer."

[0031] In this specification, etc., a device fabricated using a metal mask or an FMM (fine metal mask, high-resolution metal mask) may be referred to as a device with an MM (metal mask) structure. Also, in this specification, etc., a device fabricated without using a metal mask or an FMM may be referred to as a device with an MML (metal maskless) structure.

[0032] In this specification and the like, holes or electrons may be referred to as "carriers." Specifically, a hole injection layer or an electron injection layer may be referred to as a "carrier injection layer," a hole transport layer or an electron transport layer may be referred to as a "carrier transport layer," and a hole block layer or an electron block layer may be referred to as a "carrier block layer." Note that the above-mentioned carrier injection layer, carrier transport layer, and carrier block layer may not be clearly distinguishable from each other depending on their cross-sectional shapes or characteristics. Furthermore, one layer may have two or three functions among the carrier injection layer, carrier transport layer, and carrier block layer.

[0033] In this specification and the like, a light-emitting device (also referred to as a light-emitting element) has an EL layer between a pair of electrodes. The EL layer has at least a light-emitting layer. Here, examples of layers (also referred to as functional layers) included in the EL layer include a light-emitting layer, a carrier injection layer (a hole injection layer and an electron injection layer), a carrier transport layer (a hole transport layer and an electron transport layer), and a carrier block layer (a hole block layer and an electron block layer). In this specification and the like, one of the pair of electrodes may be referred to as a pixel electrode, and the other may be referred to as a common electrode.

[0034] In this specification, the term "island-like" refers to a state in which two or more layers made of the same material and formed in the same process are physically separated. For example, an island-like light-emitting layer refers to a state in which the light-emitting layer is physically separated from the adjacent light-emitting layer.

[0035] In this specification and the like, the term "step discontinuity" refers to a phenomenon in which a layer, a film, or an electrode is divided due to the shape of the surface on which it is formed (for example, a step or the like).

[0036] Embodiment 1 In this embodiment, a display device of one embodiment of the present invention will be described with reference to FIGS.

[0037] A display device according to one embodiment of the present invention includes a plurality of light-emitting devices each having the same light-emitting material and a color conversion layer overlapping at least some of the light-emitting devices. By changing the presence or absence of a color conversion layer and the type of color conversion layer used depending on the subpixel, the display device can display full color images.

[0038] When using light-emitting devices with the same light-emitting material, layers other than pixel electrodes (e.g., light-emitting layers) included in the light-emitting device can be common to multiple sub-pixels. This allows multiple sub-pixels to share a continuous film. However, some layers included in the light-emitting device have relatively high conductivity. When multiple sub-pixels share a highly conductive layer as a continuous film, leakage current may occur between the sub-pixels. In particular, as display devices become higher in definition or aperture ratio and the distance between sub-pixels becomes smaller, this leakage current becomes significant and may cause a deterioration in the display quality of the display device.

[0039] Therefore, in a display device according to one embodiment of the present invention, the EL layer shared by a plurality of light-emitting devices has a locally thin portion, or each of the plurality of light-emitting devices has an island-shaped EL layer. By configuring the EL layer to have a thin portion (which can also be referred to as a thin portion) or by configuring the EL layer to be separated for each light-emitting device, crosstalk between adjacent subpixels can be suppressed. This allows the display device to achieve high color reproducibility and high contrast, thereby achieving both high resolution and high display quality. Note that in the display device according to one embodiment of the present invention, the EL layer may be formed in an island shape in some subpixels, and in the other subpixels, the EL layer may be a continuous layer. In this case, it is preferable that the continuous layer has a locally thin portion.

[0040] For example, an island-shaped EL layer can be formed by vacuum deposition using a metal mask. However, this method can cause deviations in the shape and position of the island-shaped EL layer from the design due to various factors, such as the accuracy of the metal mask, misalignment between the metal mask and the substrate, deflection of the metal mask, and spreading of the contours of the formed film due to vapor scattering, making it difficult to achieve high-definition and high-aperture display devices. Furthermore, during deposition, the contours of the layer can become blurred, resulting in thinning of the edge portions. In other words, the thickness of the island-shaped EL layer formed using a metal mask can vary depending on the location. Furthermore, when manufacturing large, high-resolution, or high-definition display devices, there is a concern that the manufacturing yield will be low due to low dimensional accuracy of the metal mask and deformation due to heat, etc.

[0041] Therefore, when manufacturing a display device according to one embodiment of the present invention, an island-shaped EL layer is formed without using a shadow mask (for example, a metal mask).

[0042] For example, the greater the difference in height between the upper surface of the insulating layer exposed between adjacent pixel electrodes and the upper surface of the pixel electrode (which can also be referred to as the step between adjacent pixel electrodes), the easier it is to form locally thin portions in the EL layer or even to divide the EL layer to form island-shaped EL layers for each light-emitting device. By utilizing the step between adjacent pixel electrodes, the EL layer can be partially thinned or divided in a self-aligned manner when forming the EL layer. In other words, crosstalk can be suppressed without increasing the number of processes, and a display device with high color reproducibility and contrast can be realized.

[0043] Furthermore, if the EL layer has a thin portion or is separated for each light-emitting device, there is a risk of the light-emitting device shorting out due to the common electrode coming into contact with the exposed portion of the pixel electrode.

[0044] Therefore, in a manufacturing method of a display device according to one embodiment of the present invention, a sidewall insulating layer (also referred to as a sidewall, a sidewall protective layer, an insulating layer, or the like) is provided in contact with a side surface of a pixel electrode, which can prevent the pixel electrode from contacting a common electrode, prevent a short circuit in the light-emitting device, and improve the reliability of the light-emitting device.

[0045] In this manner, the island-shaped EL layer manufactured by the manufacturing method of the display device according to one embodiment of the present invention is formed not by using a fine metal mask but by utilizing the steps between pixel electrodes, thereby realizing a high-definition display device or a display device with a high aperture ratio, which has been difficult to achieve until now.

[0046] Although it is difficult to reduce the distance between adjacent light-emitting devices (which can also be considered the shortest distance) to less than 10 μm using, for example, a formation method that uses a fine metal mask, according to a manufacturing method of a display device of one embodiment of the present invention, in a process on a glass substrate, the distance between adjacent light-emitting devices, adjacent EL layers, adjacent sidewall insulating layers, or adjacent pixel electrodes can be reduced to, for example, less than 10 μm, 8 μm or less, 5 μm or less, 3 μm or less, 2 μm or less, 1.5 μm or less, 1 μm or less, or 0.5 μm or less. Furthermore, by using, for example, an exposure apparatus for LSIs, in a process on a Si wafer, the distance between adjacent light-emitting devices, adjacent EL layers, adjacent sidewall insulating layers, or adjacent pixel electrodes can be reduced to, for example, 500 nm or less, 200 nm or less, 100 nm or less, or even 50 nm or less. This allows the area of ​​a non-light-emitting region that may exist between two light-emitting devices to be significantly reduced, and the aperture ratio can approach 100%. For example, in a display device according to one embodiment of the present invention, the aperture ratio can be set to 40% or more, 50% or more, 60% or more, 70% or more, 80% or more, or even 90% or more, but less than 100%.

[0047] Increasing the aperture ratio of a display device can improve the reliability of the display device. Specifically, as the aperture ratio increases, the current density flowing through the light-emitting device required to obtain the same display can be reduced, thereby improving the lifespan of the display device.

[0048] The resolution of the display device of one embodiment of the present invention can be, for example, 1000 ppi or more, preferably 2000 ppi or more, more preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 6000 ppi or more, and can be 20000 ppi or less, or 30000 ppi or less.

[0049] In this embodiment, a cross-sectional structure of a display device according to one embodiment of the present invention will be mainly described, and a manufacturing method of the display device according to one embodiment of the present invention will be described in detail in Embodiment 2.

[0050] FIG. 1A shows a top view of a display device 100. The display device 100 has a display section in which a plurality of pixels 110 are arranged, and a connection section 140 outside the display section. A plurality of sub-pixels are arranged in a matrix in the display section. FIG. 1A shows two rows and six columns of sub-pixels, which together form two rows and two columns of pixels 110. The connection section 140 can also be called a cathode contact section.

[0051] 1A corresponds to the top surface shape of the light-emitting region. In this specification and the like, the top surface shape refers to the shape in a plan view, that is, the shape seen from above.

[0052] The top surface shape of the subpixel may be, for example, a triangle, a quadrangle (including a rectangle, a diamond, and a square), a polygon such as a pentagon, a polygon with rounded corners, an ellipse, or a circle.

[0053] Furthermore, the circuit layout constituting the subpixels is not limited to the range of the subpixels shown in Fig. 1A, and the circuit components may be located outside of that range. In other words, some or all of the transistors included in the subpixel 11R shown in Fig. 1A may be located outside the range of the subpixel 11R. The transistors included in the subpixel 11R may be located within the range of the subpixel 11R, the range of the subpixel 11G, or the range of the subpixel 11B shown in Fig. 1A, or may be located across multiple of these ranges.

[0054] 1A shows the subpixels 11R, 11G, and 11B as having the same or approximately the same aperture ratio (which can also be referred to as the size or the size of the light-emitting region), but this is not a limitation of one embodiment of the present invention. The aperture ratios of the subpixels 11R, 11G, and 11B can be determined as appropriate. The aperture ratios of the subpixels 11R, 11G, and 11B may be different from one another, or two or more of the subpixels 11R, 11G, and 11B may be the same or approximately the same.

[0055] A stripe arrangement is applied to the pixel 110 shown in FIG. 1A. The pixel 110 shown in FIG. 1A is composed of three subpixels: subpixel 11R, subpixel 11G, and subpixel 11B. The subpixels 11R, 11G, and 11B each emit light of a different color. Examples of the subpixels 11R, 11G, and 11B include subpixels of three colors: red (R), green (G), and blue (B), and subpixels of three colors: yellow (Y), cyan (C), and magenta (M). The number of types of subpixels is not limited to three, and may be four or more. Examples of the four subpixels include subpixels of four colors: R, G, B, and white (W), subpixels of four colors: R, G, B, and Y, and subpixels of R, G, B, and infrared light (IR).

[0056] In this specification and the like, the row direction may be referred to as the X direction, and the column direction may be referred to as the Y direction. The X direction and the Y direction intersect, for example, perpendicularly (see FIG. 1A ). FIG. 1A shows an example in which subpixels of different colors are arranged side by side in the X direction, and subpixels of the same color are arranged side by side in the Y direction.

[0057] 1A shows an example in which the connection portion 140 is located below the display portion when viewed from above, but the location of the connection portion 140 is not particularly limited. The connection portion 140 only needs to be located in at least one of the upper, right, left, and lower sides of the display portion when viewed from above, and may be located so as to surround all four sides of the display portion. The shape of the upper surface of the connection portion 140 may be strip-shaped, L-shaped, U-shaped, frame-shaped, or the like. Furthermore, the connection portion 140 may be singular or plural.

[0058] Fig. 1B shows a cross-sectional view taken along dashed line X1-X2 in Fig. 1A. Fig. 1C shows a cross-sectional view taken along dashed line Y1-Y2 in Fig. 1A. Fig. 2A shows an enlarged view of region 150A shown in Fig. 1B. Figs. 2B to 2D show regions 150B to 150D, which are modifications of region 150A.

[0059] The subpixel 11R includes a light-emitting device 130R and a color conversion layer 135R that converts at least blue light into red light, so that light emitted from the light-emitting device 130R is extracted as red light to the outside of the display device via the color conversion layer 135R.

[0060] Preferably, the subpixel 11R further includes a colored layer 132R that transmits red light. Some of the blue light (and green light) emitted by the light-emitting device 130R may be transmitted directly without being converted by the color conversion layer 135R. By extracting the light that has transmitted through the color conversion layer 135R via the colored layer 132R, light other than red light is absorbed by the colored layer 132R, and the color purity of the light emitted by the subpixel 11R can be increased.

[0061] The subpixel 11G includes a light-emitting device 130G and a color conversion layer 135G that converts blue light into green light, so that light emitted from the light-emitting device 130G is extracted as green light to the outside of the display device via the color conversion layer 135G.

[0062] The sub-pixel 11G preferably further includes a colored layer 132G that transmits green light, thereby improving the color purity of the light emitted by the sub-pixel 11G.

[0063] The sub-pixel 11B has a light-emitting device 130B that emits blue light. The light emitted from the light-emitting device 130B is extracted as blue light to the outside of the display device.

[0064] The sub-pixel 11B preferably further includes a colored layer 132B that transmits blue light, thereby increasing the color purity of the light emitted by the sub-pixel 11B.

[0065] The sub-pixels 11R, 11G, and 11B may each independently have a colored layer or may not have a colored layer.

[0066] Here, examples of blue light include light whose emission spectrum has a peak wavelength of 400 nm or more and less than 480 nm, examples of green light include light whose emission spectrum has a peak wavelength of 480 nm or more and less than 580 nm, and examples of red light include light whose emission spectrum has a peak wavelength of 580 nm or more and less than 700 nm.

[0067] It is preferable to use one or both of a phosphor and quantum dots (QDs) for the color conversion layer. Quantum dots, in particular, have a narrow peak width in the emission spectrum, and can emit light with good color purity. This can improve the display quality of the display device.

[0068] The color conversion layer can be formed by a droplet ejection method (for example, an inkjet method), a coating method, an imprint method, various printing methods (screen printing, offset printing), etc. A color conversion film such as a quantum dot film may also be used.

[0069] When processing a film to be used as a color conversion layer, it is preferable to use a photolithography method. Photolithography methods include a method in which a resist mask is formed on a thin film to be processed, the thin film is processed by etching or the like, and the resist mask is removed, and a method in which a photosensitive thin film is formed, and then the thin film is processed into a desired shape by exposure and development. For example, an island-shaped color conversion layer can be formed by forming a thin film using a material in which quantum dots are mixed into a photoresist, and processing the thin film using a photolithography method.

[0070] The material constituting the quantum dots is not particularly limited, and examples thereof include a Group 14 element, a Group 15 element, a Group 16 element, a compound consisting of multiple Group 14 elements, a compound of an element belonging to Groups 4 to 14 and a Group 16 element, a compound of a Group 2 element and a Group 16 element, a compound of a Group 13 element and a Group 15 element, a compound of a Group 13 element and a Group 17 element, a compound of a Group 14 element and a Group 15 element, a compound of a Group 11 element and a Group 17 element, iron oxides, titanium oxides, chalcogenide spinels, and various semiconductor clusters.

[0071] Specifically, cadmium selenide, cadmium sulfide, cadmium telluride, zinc selenide, zinc oxide, zinc sulfide, zinc telluride, mercury sulfide, mercury selenide, mercury telluride, indium arsenide, indium phosphide, gallium arsenide, gallium phosphide, indium nitride, gallium nitride, indium antimonide, gallium antimonide, aluminum phosphide, aluminum arsenide, aluminum antimonide, lead selenide, lead telluride, lead sulfide, indium selenide, terephthalic acid, Indium sulfide, indium sulfide, gallium selenide, arsenic sulfide, arsenic selenide, arsenic telluride, antimony sulfide, antimony selenide, antimony telluride, bismuth sulfide, bismuth selenide, bismuth telluride, silicon, silicon carbide, germanium, tin, selenium, tellurium, boron, carbon, phosphorus, boron nitride, boron phosphide, boron arsenide, aluminum nitride, aluminum sulfide, barium sulfide, barium selenide, barium telluride, calcium sulfide, selenide Calcium, calcium telluride, beryllium sulfide, beryllium selenide, beryllium telluride, magnesium sulfide, magnesium selenide, germanium sulfide, germanium selenide, germanium telluride, tin sulfide, tin selenide, tin telluride, lead oxide, copper fluoride, copper chloride, copper bromide, copper iodide, copper oxide, copper selenide, nickel oxide, cobalt oxide, cobalt sulfide, iron oxide, iron sulfide, manganese oxide, molybdenum sulfide, vanadium oxide, tungsten oxide, tungsten oxide Examples of the quantum dots include talc, titanium oxide, zirconium oxide, silicon nitride, germanium nitride, aluminum oxide, barium titanate, a compound of selenium, zinc, and cadmium, a compound of indium, arsenic, and phosphorus, a compound of cadmium, selenium, and sulfur, a compound of cadmium, selenium, and tellurium, a compound of indium, gallium, and arsenic, a compound of indium, gallium, and selenium, a compound of indium, selenium, and sulfur, a compound of copper, indium, and sulfur, and combinations thereof. Also, so-called alloy-type quantum dots, whose composition is expressed in any ratio, may be used.

[0072] Quantum dot structures include core, core-shell, and core-multishell types. Quantum dots have a high proportion of surface atoms, making them highly reactive and prone to aggregation. Therefore, it is preferable that a protective agent or protective group is attached to the surface of the quantum dots. By attaching the protective agent or providing the protective group, aggregation can be prevented and solubility in a solvent can be increased. It is also possible to reduce reactivity and improve electrical stability.

[0073] Since the band gap of quantum dots increases as their size decreases, their size can be adjusted appropriately to obtain light of the desired wavelength. As the crystal size decreases, the emission of quantum dots shifts toward the blue side, i.e., toward higher energy. Therefore, by changing the size of the quantum dots, the emission wavelength can be adjusted across the wavelength ranges of the ultraviolet, visible, and infrared spectral regions. The size (diameter) of the quantum dots is, for example, 0.5 nm or more and 20 nm or less, preferably 1 nm or more and 10 nm or less. The narrower the size distribution of quantum dots, the narrower the emission spectrum, and the more excellent the color purity of the light emitted. Furthermore, the shape of the quantum dots is not particularly limited and may be spherical, rod-shaped, disc-shaped, or other shapes. Quantum rods, which are rod-shaped quantum dots, have the function of emitting directional light.

[0074] The colored layer is a colored layer that selectively transmits light in a specific wavelength range and absorbs light in other wavelength ranges. For example, a color filter that transmits light in the red wavelength range can be used for the colored layer 132R. For example, a color filter that transmits light in the green wavelength range can be used for the colored layer 132G. For example, a color filter that transmits light in the blue wavelength range can be used for the colored layer 132B. Examples of materials that can be used for the colored layers include metal materials, resin materials, and resin materials containing pigments or dyes.

[0075] 1B , in the display device 100, an insulating layer is provided on a layer 101 including transistors, and light-emitting devices 130R, 130G, and 130B are provided on the insulating layer, with a protective layer 131 provided to cover these light-emitting devices. Provided on the protective layer 131 are a color conversion layer 135R overlapping with the light-emitting device 130R, a coloring layer 132R on the color conversion layer 135R, a color conversion layer 135G overlapping with the light-emitting device 130G, a coloring layer 132G on the color conversion layer 135G, and a coloring layer 132B overlapping with the light-emitting device 130B. A substrate 120 is bonded to the coloring layers 132R, 132G, and 132B by a resin layer 122.

[0076] The display device of one embodiment of the present invention may be any of a top-emission type that emits light in a direction opposite to a substrate on which a light-emitting device is formed, a bottom-emission type that emits light toward a substrate on which a light-emitting device is formed, and a dual-emission type that emits light to both sides. In this embodiment, a top-emission display device will be described as an example.

[0077] The layer 101 including transistors can have, for example, a stacked structure in which a plurality of transistors are provided on a substrate and an insulating layer is provided to cover the transistors. The insulating layer over the transistors may have a single-layer structure or a stacked structure. Figure 1B shows the insulating layers over the transistors, including an insulating layer 255a, an insulating layer 255b over the insulating layer 255a, and an insulating layer 255c over the insulating layer 255b. Note that the insulating layers over the transistors (insulating layers 255a to 255c) may also be considered as part of the layer 101 including transistors.

[0078] As will be described later, it is preferable that the insulating layer 255c has a recess between two adjacent light-emitting devices. This results in a large step between adjacent pixel electrodes when forming the EL layer, making it easier to form the EL layer separately for each light-emitting device. Figure 1B shows an example in which a recess is provided in the insulating layer 255c. Furthermore, the insulating layer 255c may have an opening between two adjacent light-emitting devices, and in this case, a recess may be provided in the insulating layer 255b.

[0079] The insulating layers 255a, 255b, and 255c can each be suitably formed using various inorganic insulating films such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, and a nitride oxide insulating film. The insulating layers 255a and 255c are preferably formed using an oxide insulating film or an oxynitride insulating film such as a silicon oxide film, a silicon oxynitride film, or an aluminum oxide film. The insulating layer 255b is preferably formed using a nitride insulating film or a nitride oxide insulating film such as a silicon nitride film or a silicon nitride oxide film. More specifically, the insulating layers 255a and 255c are preferably formed using silicon oxide films, and the insulating layer 255b is preferably formed using a silicon nitride film. The insulating layer 255b preferably functions as an etching protective film.

[0080] In this specification and the like, an oxynitride refers to a material whose composition contains more oxygen than nitrogen, and a nitride oxide refers to a material whose composition contains more nitrogen than oxygen. For example, silicon oxynitride refers to a material whose composition contains more oxygen than nitrogen, and silicon nitride oxide refers to a material whose composition contains more nitrogen than oxygen.

[0081] A structural example of the layer 101 including a transistor will be described later in Embodiment 4.

[0082] As the light-emitting device, for example, an OLED (organic light-emitting diode) or a QLED (quantum-dot light-emitting diode) is preferably used. Examples of the light-emitting material contained in the light-emitting device include a fluorescent material (fluorescent material), a phosphorescent material (phosphorescent material), a material exhibiting thermally activated delayed fluorescence (thermally activated delayed fluorescence: TADF material), and an inorganic compound (such as a quantum dot material). Furthermore, an LED such as a micro LED (light-emitting diode) can also be used as the light-emitting device.

[0083] The light emitting device can emit light of infrared, red, green, blue, cyan, magenta, yellow, white, etc. The color purity can be improved by providing the light emitting device with a microcavity structure.

[0084] Of the pair of electrodes of the light-emitting device, it is preferable that a conductive film that transmits visible light is used for the electrode from which light is extracted, and a conductive film that reflects visible light is used for the electrode from which light is not extracted.

[0085] Of the pair of electrodes that a light-emitting device has, one electrode functions as an anode and the other electrode functions as a cathode. In the following, an example in which the pixel electrode functions as the anode and the common electrode functions as the cathode will be described.

[0086] The light-emitting device 130R has a pixel electrode 111R on an insulating layer 255c, an island-shaped EL layer 113 on the pixel electrode 111R, and a common electrode 115 on the EL layer 113.

[0087] The light-emitting device 130G has a pixel electrode 111G on an insulating layer 255c, an island-shaped EL layer 113 on the pixel electrode 111G, and a common electrode 115 on the EL layer 113.

[0088] The light-emitting device 130B has a pixel electrode 111B on an insulating layer 255c, an island-shaped EL layer 113 on the pixel electrode 111B, and a common electrode 115 on the EL layer 113.

[0089] The light-emitting devices 130R, 130G, and 130B each have an island-shaped EL layer 113. These EL layers 113 are formed in the same process and have the same configuration. Therefore, it can be said that these EL layers 113 have the same light-emitting material.

[0090] The EL layer 113 can be configured to emit, for example, white light. For example, the EL layer 113 includes a first light-emitting material that emits blue light and a second light-emitting material that emits light with a wavelength longer than blue.

[0091] When the light-emitting device 130R is configured to emit white light, the color conversion layer 135R preferably converts blue and green light into red light and transmits the red light. By providing such a color conversion layer 135R overlapping the light-emitting device 130R, the blue and green components of the white light can be converted into red light components and extracted to the outside of the display device. Therefore, the red light extraction efficiency can be improved compared to a configuration without the color conversion layer 135R. Furthermore, the color conversion layer 135R preferably converts light with a wavelength shorter than red (e.g., light from blue to orange) into red light and transmits the red light.

[0092] As described above, it is preferable that light transmitted through the color conversion layer 135R is extracted to the outside of the display device via the colored layer 132R, which transmits red light. In particular, as shown in FIG. 1B , it is preferable that the colored layer 132R is provided so as to cover the end portion of the color conversion layer 135R. This allows, for example, the colored layer 132R to absorb blue light and green light that is not color converted by the color conversion layer 135R and that is transmitted through the color conversion layer 135R. This can increase the color purity of the light emitted by the sub-pixel 11R.

[0093] Similarly, when the light-emitting device 130G is configured to emit white light, it is preferable that the color conversion layer 135G converts blue light into green light and transmits the green light. By providing such a color conversion layer 135G overlapping the light-emitting device 130G, the blue light component of the white light can be converted into a green light component and extracted to the outside of the display device. Therefore, the extraction efficiency of green light can be improved compared to a configuration without the color conversion layer 135G.

[0094] It is also preferable that the light transmitted through the color conversion layer 135G is extracted to the outside of the display device via the colored layer 132G that transmits green light, thereby improving the color purity of the light emitted by the sub-pixel 11G.

[0095] Furthermore, when the light-emitting device 130B is configured to emit white light, it is preferable to provide a colored layer 132B that transmits blue light so as to overlap the light-emitting device 130B, thereby enabling the blue light component of the white light to be extracted to the outside of the display device.

[0096] In addition, by applying a microcavity structure, a light-emitting device having an EL layer configured to emit white light may emit light of a specific wavelength, such as red, green, or blue, intensified.

[0097] For example, by applying a configuration that emits white light to the EL layer 113 and by applying a microcavity structure, red light can be emitted from the light-emitting device 130R, green light can be emitted from the light-emitting device 130G, and blue light can be emitted from the light-emitting device 130B.

[0098] Here, by applying a microcavity structure, it is possible to enhance and extract light of a desired wavelength in the front direction, but light extracted from an oblique direction ends up containing a white light component.

[0099] Therefore, even in a display device employing a microcavity structure, providing color conversion layers 135R and 135G is preferable because it can increase the light extraction efficiency of a desired color. Also, providing colored layers 132R, 132G, and 132B is preferable because it can increase the color purity of light emitted by each sub-pixel.

[0100] The EL layer 113 can be configured to emit, for example, blue light. For example, the EL layer 113 includes a light-emitting material that emits blue light.

[0101] When the light-emitting device 130R is configured to emit blue light, the color conversion layer 135R preferably converts the blue light into red light and transmits the red light. By providing such a color conversion layer 135R on top of the light-emitting device 130R, the blue light emitted by the EL layer 113 can be converted into red light and extracted to the outside of the display device.

[0102] Similarly, when the light-emitting device 130G is configured to emit blue light, the color conversion layer 135G preferably converts the blue light into green light and transmits the green light. By providing such a color conversion layer 135G on top of the light-emitting device 130G, the blue light emitted by the EL layer 113 can be converted into green light and extracted to the outside of the display device.

[0103] That is, even if a structure that emits blue light is applied to the EL layer 113, a full-color display device can be realized.

[0104] Even when the EL layer 113 is configured to emit blue light, the color purity of the light emitted by each sub-pixel can be increased by using the colored layers 132R, 132G, and 132B, respectively, which is preferable.

[0105] Furthermore, even when the EL layer 113 is configured to emit blue light, the microcavity structure may be applied to intensify the blue light emitted by the light-emitting device, or the microcavity structure may not be applied.

[0106] The EL layer 113 may be configured to emit light having a wavelength shorter than blue, for example, purple light or ultraviolet light. For example, the EL layer 113 includes a light-emitting material that emits purple light or ultraviolet light.

[0107] Here, light with a wavelength shorter than that of blue is, for example, light whose emission spectrum has a peak wavelength of 100 nm or more and less than 400 nm.

[0108] When the light-emitting device 130B is configured to emit light with a wavelength shorter than blue, it is preferable to provide a color conversion layer that converts the light emitted by the light-emitting device 130B into blue light and transmits the blue light, overlapping the light-emitting device 130B. It is also preferable to provide the colored layer 132B at a position that overlaps the light-emitting device 130B via the color conversion layer.

[0109] In this way, the sub-pixel 11B that emits blue light can also be configured to use a color conversion layer or a combination of a color conversion layer and a colored layer.

[0110] When the light emitting devices 130R and 130G are configured to emit light with a wavelength shorter than blue, it is preferable that the color conversion layers 135R and 135G also be able to convert light with a wavelength shorter than blue into red or green light.

[0111] The light-emitting device of the present embodiment may have a single structure (a structure having only one light-emitting unit) or a tandem structure (a structure having multiple light-emitting units). The light-emitting unit has at least one light-emitting layer.

[0112] The EL layer 113 includes at least a light-emitting layer.

[0113] The EL layer 113 that emits white light may have, for example, a configuration including a light-emitting layer that emits blue light and a light-emitting layer that emits light with a wavelength longer than that of blue.

[0114] The EL layer 113 that emits blue light may have, for example, a configuration including a light-emitting layer that emits blue light.

[0115] Furthermore, when a light-emitting device with a tandem structure is used, the EL layer 113 that emits white light can have, for example, a structure including a light-emitting unit that emits blue light and a light-emitting unit that emits light with a wavelength longer than blue. It is preferable to provide a charge generation layer between each light-emitting unit. By using a tandem structure, a light-emitting device that can emit light with high brightness can be realized.

[0116] Furthermore, when a light-emitting device with a tandem structure is used, for example, a configuration having two or more light-emitting units that emit blue light can be applied to the blue light-emitting EL layer 113. The EL layer 113 may further have a light-emitting unit that emits light with a wavelength longer than blue (for example, a light-emitting unit that emits blue-green or green light).

[0117] The EL layer 113 may also have one or more of a hole injection layer, a hole transport layer, a hole blocking layer, a charge generating layer, an electron blocking layer, an electron transport layer, and an electron injection layer.

[0118] For example, the EL layer 113 may have, from the anode side, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer in this order. Alternatively, an electron blocking layer may be provided between the hole transport layer and the light-emitting layer. Alternatively, a hole blocking layer may be provided between the electron transport layer and the light-emitting layer.

[0119] Furthermore, for example, the EL layer 113 may have a first light-emitting unit, a charge generation layer on the first light-emitting unit, and a second light-emitting unit on the charge generation layer.

[0120] For more detailed information on the structure and materials of the light-emitting device, reference can be made to Embodiment 5.

[0121] In Figure 1B, the EL layers 113 of each light-emitting device are spaced apart from one another. By providing an island-like EL layer for each light-emitting device, leakage current between adjacent light-emitting devices can be suppressed. This prevents unintended light emission due to crosstalk, and realizes a display device with extremely high contrast. In particular, it realizes a display device with high current efficiency at low brightness.

[0122] Further, a material layer 113s, which is formed in the same process as the EL layer 113 and has the same structure as the EL layer 113, is located on the insulating layer 255c. The material layer 113s is separated from the EL layer 113 when the layers constituting the EL layer 113 are formed, and is provided independently on the insulating layer 255c.

[0123] The region where any one of the pixel electrodes 111R, 111G, and 111B overlaps with the EL layer 113 and the common electrode 115 can be called a light-emitting region, and is a region where EL light emission is obtained. The light-emitting region and the region where the material layer 113s is provided are each regions where PL (Photoluminescence) light emission is obtained. From these facts, it can be said that the light-emitting region and the region where the material layer 113s is provided can be distinguished by checking the EL light emission and the PL light emission.

[0124] Sidewall insulating layers 114 are provided so as to contact the side surfaces of the pixel electrodes 111R, 111G, and 111B, respectively. By providing the sidewall insulating layers 114, it is possible to prevent any of the pixel electrodes 111R, 111G, and 111B from contacting the common electrode 115. This makes it possible to prevent short circuits in the light-emitting device and improve the reliability of the light-emitting device.

[0125] The sidewall insulating layer 114 can be made of an inorganic insulating film such as an insulating oxide film, an insulating nitride film, an insulating oxynitride film, or an insulating nitride oxide film. Examples of insulating oxide films include a silicon oxide film, an aluminum oxide film, a gallium oxide film, a germanium oxide film, an yttrium oxide film, a zirconium oxide film, a lanthanum oxide film, a neodymium oxide film, a hafnium oxide film, and a tantalum oxide film. Examples of insulating nitride films include a silicon nitride film and an aluminum nitride film. Examples of insulating oxynitride films include a silicon oxynitride film and an aluminum oxynitride film. Examples of insulating nitride oxide films include a silicon nitride oxide film and an aluminum nitride oxide film.

[0126] The sidewall insulating layer 114 may have a single layer structure or a multilayer structure.

[0127] The method for forming the sidewall insulating layer 114 is not particularly limited. The sidewall insulating layer 114 can be formed by, for example, a sputtering method, a CVD method, a PECVD method, or an ALD method. In particular, the sputtering method, the CVD method, or the PECVD method, which have a faster film formation rate than the ALD method, are preferred because they allow the sidewall insulating layer 114 to be formed with a thickness sufficient to ensure insulation with high productivity.

[0128] For example, a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or a silicon nitride oxide film is preferably used as the sidewall insulating layer 114. This enables highly reliable display devices to be manufactured with high productivity.

[0129] Alternatively, an aluminum oxide film may be formed by ALD as the sidewall insulating layer 114. By using ALD, the sidewall insulating layer 114 can be formed with high coverage.

[0130] In FIG. 1B , an insulating layer (also referred to as a partition wall, bank, spacer, etc.) covering the upper end of the pixel electrode 111R is not provided between the pixel electrode 111R and the EL layer 113. Furthermore, an insulating layer covering the upper end of the pixel electrode 111G is not provided between the pixel electrode 111G and the EL layer 113. This allows the distance between adjacent light-emitting devices to be extremely narrow. This allows for a high-definition or high-resolution display device. Furthermore, a mask for forming the insulating layer is not required, thereby reducing the manufacturing cost of the display device.

[0131] Furthermore, by using a structure in which an insulating layer covering a part of the top surface of the pixel electrode (which can also be referred to as an edge of the top surface) is not provided between the pixel electrode and the EL layer, in other words, by using a structure in which an insulating layer is not provided between the pixel electrode and the EL layer, light from the EL layer can be efficiently extracted. Therefore, the display device of one embodiment of the present invention can have extremely low viewing angle dependence. By reducing the viewing angle dependence, the visibility of images in the display device can be improved. For example, in the display device of one embodiment of the present invention, the viewing angle (the maximum angle at which a certain contrast ratio is maintained when the screen is viewed from an oblique direction) can be set to a range of 100° to less than 180°, preferably 150° to 170°. Note that the above viewing angle can be applied to both the vertical and horizontal directions.

[0132] 1B, the EL layer 113 is formed to cover the entire upper surface of each of the pixel electrodes 111R, 111G, and 111B. This configuration allows the entire upper surface of the pixel electrode to be used as a light-emitting region. Furthermore, compared to a configuration in which an insulating layer is provided to cover only a portion of the upper surface of the pixel electrode, it is easier to increase the aperture ratio.

[0133] The common electrode 115 is shared by the light-emitting devices 130R, 130G, and 130B. The common electrode 115 shared by the plurality of light-emitting devices is electrically connected to a conductive layer 123 provided in the connection portion 140 (see FIG. 1C ). The conductive layer 123 is preferably made of the same material and formed in the same process as the pixel electrodes 111R, 111G, and 111B.

[0134] 1C , the conductive layer 123 is directly connected to the common electrode 115. For example, by using a mask for defining a film formation area (also referred to as an area mask or a rough metal mask to distinguish it from a fine metal mask), the regions where the EL layer 113 and the common electrode 115 are formed can be changed, and the conductive layer 123 and the common electrode 115 can be directly connected.

[0135] 1B and 2A , an island-shaped EL layer 113 is provided on the pixel electrode 111G, an island-shaped EL layer 113 is provided on the pixel electrode 111B, and a material layer 113s is provided on the insulating layer 255c. The EL layer 113 on the pixel electrode 111G, the EL layer 113 on the pixel electrode 111B, and the material layer 113s are spaced apart from each other.

[0136] In this way, by configuring the EL layer to be separated for each light-emitting device, it is possible to suppress the occurrence of crosstalk between adjacent sub-pixels.

[0137] Here, a description will be given of a configuration of the sidewall insulating layer 114 that is preferable for partially thinning the EL layer 113 in a self-aligned manner or for dividing the EL layer 113 when the EL layer 113 is formed.

[0138] The height T1 of the sidewall insulating layer 114 shown in FIG. 2A is preferably 0.5 times or more, more preferably 0.8 times or more, even more preferably 1 time or more, and even more preferably 1.5 times or more, the thickness of the EL layer 113.

[0139] It is preferable to use the thickness of the sidewall insulating layer 114 in the direction perpendicular to the substrate surface as the height T1 of the sidewall insulating layer 114. In addition, in Fig. 2A, the height T1 of the sidewall insulating layer 114 can also be said to be the sum of the thickness of the pixel electrode and the depth of the recess provided in the insulating layer 255c.

[0140] As the thickness of the EL layer 113, it is preferable to use the thickness T2 of the EL layer 113 in the region overlapping the upper surface of the pixel electrode as shown in FIG. 2A.

[0141] Furthermore, if the height T1 of the sidewall insulating layer 114 is too high, there is a risk that the common electrode 115 will also be partially thinned or divided. Therefore, the height T1 of the sidewall insulating layer 114 is preferably three times or less the thickness of the EL layer 113, and more preferably two times or less.

[0142] As will be described later in the second embodiment, it is preferable to reduce the distance between the film formation source and the substrate when forming the common electrode 115. This can improve the coverage of the common electrode 115 on the surface on which it is formed.

[0143] As a result, it is possible to prevent the formation of divided portions and portions with locally thin film thickness in the common electrode 115. Therefore, it is possible to suppress the occurrence of poor connection due to divided portions and an increase in electrical resistance due to locally thin film thickness in the common electrode 115 between the light-emitting devices. As a result, the display device according to one embodiment of the present invention can improve the display quality.

[0144] Furthermore, the angle formed between at least a part of the surface (e.g., a side surface) of the sidewall insulating layer 114 that is in contact with the EL layer 113 and the substrate surface is preferably perpendicular or approximately perpendicular. This angle can also be referred to as the angle formed between the part of the surface (e.g., a side surface) of the sidewall insulating layer 114 that is in contact with the EL layer 113 and the bottom surface. The angle is preferably 60° or more, more preferably 80° or more, and even more preferably 85° or more, and is preferably 140° or less, more preferably 110° or less, more preferably 100° or less, and even more preferably 95° or less.

[0145] In order to set the angle within the above-mentioned range, the angle between the side surface of the pixel electrode and the substrate surface is also preferably perpendicular or approximately perpendicular. The angle between the side surface of the pixel electrode and the substrate surface is preferably 60° or more, more preferably 80° or more, and even more preferably 85° or more, and is preferably 140° or less, more preferably 110° or less, more preferably 100° or less, and even more preferably 95° or less.

[0146] The region 150B shown in FIG. 2B and the region 150C shown in FIG. 2C are examples in which the EL layer 113 is provided so as to cover the pixel electrode 111G, the sidewall insulating layer 114, the insulating layer 255c, and the pixel electrode 111B.

[0147] A region 113t shown in FIG. 2B is a portion of the EL layer 113 that is thinner than other portions.

[0148] The thickness of the region 113t does not refer to the thickness in the direction perpendicular to a reference plane such as the substrate surface, but refers to the thickness in the direction normal to the surface on which the layer is formed. Therefore, if the surface on which the layer is formed is uneven, the direction defining the thickness will differ depending on the location. For example, the thickness of the EL layer 113 in the region 113t can be said to be the thickness in the direction normal to the side surface of the sidewall insulating layer 114.

[0149] In this way, even if the EL layer 113 is configured to be partially thinned, it is possible to suppress the occurrence of crosstalk between adjacent sub-pixels.

[0150] Region 150C shown in FIG. 2C differs from the configuration of region 150B in that insulating layer 255c does not have a recess between two adjacent light emitting devices.

[0151] Moreover, a region 150D shown in FIG. 2D is an example in which an insulating layer 255c has two recesses, a shallow recess and a deep recess, between two adjacent light-emitting devices.

[0152] A recess may be formed in the insulating layer 255c when processing the conductive film that will become the pixel electrode. Furthermore, a recess may also be formed in the insulating layer 255c when processing the insulating film that will become the sidewall insulating layer 114. This results in shallow and deep recesses. In FIG. 2D , the sidewall insulating layer 114 is in contact with the shallow recess, and the material layer 113s is in contact with the deep recess.

[0153] In addition, the distance T0 between the surface of the deep recess in the insulating layer 255c and the bottom surface of the sidewall insulating layer 114 shown in Figure 2D is also a parameter that affects whether the EL layer 113 is partially thinned or whether the EL layer 113 is divided.

[0154] For the same reasons as above, for example, the sum of the distance T0 and the height T1 of the sidewall insulating layer 114 is preferably 0.5 times or more, more preferably 0.8 times or more, even more preferably 1 time or more, and even more preferably 1.5 times or more the thickness of the EL layer 113. Moreover, the sum of the distance T0 and the height T1 of the sidewall insulating layer 114 is preferably 3 times or less, more preferably 2 times or less the thickness of the EL layer 113.

[0155] In FIG. 2D, the sum of the distance T0 and the height T1 of the sidewall insulating layer 114 can also be said to be the sum of the thickness of the pixel electrode and the depth of the recess provided in the insulating layer 255c.

[0156] As described above, in the display device of one embodiment of the present invention, by providing the sidewall insulating layer 114 in contact with the side surface of the pixel electrode, contact between the pixel electrode and the common electrode 115 can be suppressed, and thus a short circuit in the light-emitting device can be prevented. Furthermore, by setting the height and shape of the sidewall insulating layer 114 to a structure suitable for partially thinning the EL layer 113 or for separating the EL layer 113, crosstalk between adjacent subpixels can be suppressed. Furthermore, by setting the height of the sidewall insulating layer 114 to a structure suitable for preventing the common electrode 115 from being separated or thinned, poor connection and an increase in electrical resistance in the light-emitting device can be suppressed.

[0157] It can also be said that the display device of one embodiment of the present invention is configured so that the EL layer 113 is intentionally disconnected and the common electrode 115 is not disconnected.

[0158] It is preferable that the light-emitting devices 130R, 130G, and 130B have a protective layer 131. The reliability of the light-emitting devices can be improved by providing the protective layer 131. The protective layer 131 may have a single-layer structure or a laminated structure of two or more layers.

[0159] There is no restriction on the conductivity of the protective layer 131. The protective layer 131 can be made of at least one of an insulating film, a semiconductor film, and a conductive film.

[0160] The protective layer 131 has an inorganic film, which can prevent oxidation of the common electrode 115, prevent impurities (moisture, oxygen, etc.) from entering the light-emitting device, and so on, thereby suppressing deterioration of the light-emitting device and improving the reliability of the display device.

[0161] For example, an inorganic insulating film such as an insulating oxide film, an insulating nitride film, an insulating oxynitride film, or an insulating nitride oxide film can be used for the protective layer 131. Specific examples of these inorganic insulating films are as given in the description of the sidewall insulating layer 114. In particular, the protective layer 131 preferably has an insulating nitride film or an insulating nitride oxide film, and more preferably has an insulating nitride film.

[0162] Alternatively, an inorganic film containing In—Sn oxide (also referred to as ITO), In—Zn oxide, Ga—Zn oxide, Al—Zn oxide, indium gallium zinc oxide (In—Ga—Zn oxide, also referred to as IGZO), or the like can be used for the protective layer 131. The inorganic film preferably has high resistance, specifically, preferably has higher resistance than the common electrode 115. The inorganic film may further contain nitrogen.

[0163] When light emitted from the light-emitting device is extracted through the protective layer 131, it is preferable that the protective layer 131 has high transparency to visible light. For example, ITO, IGZO, and aluminum oxide are preferable because they are inorganic materials that have high transparency to visible light.

[0164] For example, a stacked structure of an aluminum oxide film and a silicon nitride film on the aluminum oxide film, or a stacked structure of an aluminum oxide film and an IGZO film on the aluminum oxide film can be used as the protective layer 131. By using such a stacked structure, impurities (water, oxygen, etc.) can be prevented from entering the EL layer side.

[0165] The protective layer 131 may have a two-layer structure formed by using different film formation methods. Specifically, the first layer of the protective layer 131 may be formed by the ALD method, and the second layer of the protective layer 131 may be formed by the sputtering method.

[0166] The protective layer 131 may include an organic film. For example, the protective layer 131 may include both an organic film and an inorganic film.

[0167] Examples of organic materials that can be used for the protective layer 131 include acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimideamide resin, silicone resin, siloxane resin, benzocyclobutene-based resin, phenol resin, and precursors of these resins. Alternatively, organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, and alcohol-soluble polyamide resin may be used for the protective layer 131.

[0168] 1B and other figures, when color conversion layers 135R, 135G and colored layers 132R, 132G, 132B, etc. are formed directly on protective layer 131, it is preferable to use a layer having a planarizing function for protective layer 131. By using an organic film for protective layer 131, the planarity of the surface of protective layer 131 can be improved, which is preferable.

[0169] A light-shielding layer may be provided on the surface of the substrate 120 facing the resin layer 122. Various optical members may be disposed on the outer side of the substrate 120 (the surface opposite to the resin layer 122). Examples of optical members include a polarizing plate, a retardation plate, a light diffusion layer (such as a diffusion film), an anti-reflection layer, and a light-collecting film. Furthermore, a surface protection layer such as an anti-static film that suppresses the adhesion of dust, a water-repellent film that makes it difficult for dirt to adhere, a hard coat film that suppresses the occurrence of scratches during use, or an impact absorbing layer may be disposed on the outer side of the substrate 120. For example, a glass layer or a silica layer (SiO ｘ The surface protection layer can be preferably formed of a material such as DLC (diamond-like carbon), aluminum oxide (AlO ｘ ), polyester-based materials, or polycarbonate-based materials may also be used. Note that it is preferable to use a material with high transmittance to visible light for the surface protection layer. It is also preferable to use a material with high hardness for the surface protection layer.

[0170] The substrate 120 can be made of glass, quartz, ceramics, sapphire, resin, metal, alloy, semiconductor, or the like. A material that transmits light is used for the substrate on the side from which light from the light-emitting device is extracted. Using a flexible material for the substrate 120 can increase the flexibility of the display device. Alternatively, a polarizing plate may be used as the substrate 120.

[0171] The substrate 120 can be made of polyester resin such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamideimide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, etc. The substrate 120 can also be made of glass having a thickness sufficient to provide flexibility.

[0172] When a circularly polarizing plate is superimposed on a display device, it is preferable that the display device has a substrate with high optical isotropy. A substrate with high optical isotropy has small birefringence (or a small amount of birefringence).

[0173] The absolute value of the retardation (phase difference) of a substrate having high optical isotropy is preferably 30 nm or less, more preferably 20 nm or less, and even more preferably 10 nm or less.

[0174] Examples of films with high optical isotropy include triacetyl cellulose (TAC, also known as cellulose triacetate) films, cycloolefin polymer (COP) films, cycloolefin copolymer (COC) films, and acrylic films.

[0175] Furthermore, when a film is used as a substrate, the film may absorb water, causing deformation such as wrinkles in the display device. Therefore, it is preferable to use a film with low water absorption for the substrate. For example, it is preferable to use a film with a water absorption rate of 1% or less, more preferably 0.1% or less, and even more preferably 0.01% or less.

[0176] The resin layer 122 can be made of various curable adhesives, such as a photo-curable adhesive (e.g., an ultraviolet curable adhesive), a reactive curable adhesive, a thermosetting adhesive, or an anaerobic adhesive. Examples of such adhesives include epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, and EVA (ethylene vinyl acetate) resin. Materials with low moisture permeability, such as epoxy resin, are particularly preferred. Two-component resins may also be used. Adhesive sheets or the like may also be used.

[0177] Examples of materials that can be used for conductive layers such as the gate, source, and drain of a transistor, as well as various wirings and electrodes that constitute a display device include metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten, and alloys containing these metals as their main components. Films containing these materials can be used as a single layer or a stacked layer structure.

[0178] Examples of light-transmitting conductive materials include conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and zinc oxide containing gallium, or graphene. Alternatively, metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, or alloy materials containing such metal materials, can be used. Alternatively, nitrides of such metal materials (e.g., titanium nitride) can be used. When using metal materials or alloy materials (or their nitrides), it is preferable to thin them sufficiently to ensure light-transmitting properties. A stacked film of the above materials can also be used as the conductive layer. For example, a stacked film of an alloy of silver and magnesium and indium tin oxide is preferable because it can enhance conductivity. These materials can also be used for conductive layers such as various wirings and electrodes constituting display devices, and conductive layers (conductive layers functioning as pixel electrodes or counter electrodes) in light-emitting devices.

[0179] Examples of insulating materials that can be used for each insulating layer include resins such as acrylic resin and epoxy resin, and inorganic insulating materials such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, and aluminum oxide.

[0180] The pixel electrodes 111R, 111G, and 111B may have different thicknesses, or optical adjustment layers having different thicknesses may be provided on the pixel electrodes 111R, 111G, and 111B.

[0181] Figure 3A shows a variation of Figure 1B. Figures 3B and 3C are enlarged views of areas 150E and 150F shown in Figure 3A.

[0182] In FIG. 3A, an optical adjustment layer 116R is provided on a pixel electrode 111R, an optical adjustment layer 116G is provided on a pixel electrode 111G, and an optical adjustment layer 116B is provided on a pixel electrode 111B.

[0183] FIG. 3A shows an example in which the thickness of optical adjustment layer 116R is greater than the thickness of optical adjustment layer 116G, which is greater than the thickness of optical adjustment layer 116B.

[0184] For example, if the EL layer 113 is configured to emit white light, it is preferable that the thickness of each optical adjustment layer is set so that optical adjustment layer 116R strengthens red light, optical adjustment layer 116G strengthens green light, and optical adjustment layer 116B strengthens blue light, thereby realizing a microcavity structure and increasing the color purity of the light emitted by each light-emitting device.

[0185] The optical adjustment layer is preferably formed using a conductive material that is transparent to visible light, among conductive materials that can be used as electrodes of a light-emitting device.

[0186] 3A and 3B , an island-shaped EL layer 113 is provided on the pixel electrode 111R, an island-shaped EL layer 113 is provided on the pixel electrode 111G, and a material layer 113s is provided on the insulating layer 255c. The EL layer 113 on the pixel electrode 111R, the EL layer 113 on the pixel electrode 111G, and the material layer 113s are spaced apart from each other.

[0187] 3A and 3C , an island-shaped EL layer 113 is provided on the pixel electrode 111G, and the island-shaped EL layer 113 is provided so as to cover the insulating layer 255c, the sidewall insulating layer 114, and the pixel electrode 111B. The EL layer 113 on the pixel electrode 111G and the EL layer 113 covering the insulating layer 255c, the sidewall insulating layer 114, and the pixel electrode 111B are spaced apart from each other.

[0188] 3B and 3C , the height T3 of the sidewall insulating layer 114 covering the side surface of the pixel electrode 111R is greater than the height T4 of the sidewall insulating layer 114 covering the side surface of the pixel electrode 111G and the height T5 of the sidewall insulating layer 114 covering the side surface of the pixel electrode 111B, and the height T4 of the sidewall insulating layer 114 covering the side surface of the pixel electrode 111G is greater than the height T5 of the sidewall insulating layer 114 covering the side surface of the pixel electrode 111B.

[0189] 3C , depending on the value of height T5, the EL layer 113 may not be divided by the sidewall insulating layer 114 covering the side surface of pixel electrode 111B, and one island-shaped EL layer 113 may have a portion located on insulating layer 255c, a portion covering sidewall insulating layer 114, and a portion covering the upper surface of pixel electrode 111B. However, in FIG. 3C , the EL layer 113 is divided by the sidewall insulating layer 114 covering the side surface of pixel electrode 111G. In other words, because island-shaped EL layers are provided independently between adjacent light-emitting devices, crosstalk between adjacent subpixels can be suppressed.

[0190] Depending on the value of height T4, the EL layer 113 may not be divided by the sidewall insulating layer 114 covering the side surface of pixel electrode 111G. In other words, one island of EL layer 113 may cover insulating layer 255c, sidewall insulating layer 114, the top surface of pixel electrode 111G, and the top surface of pixel electrode 111B. Even in this case, the portion covering sidewall insulating layer 114 is thinner than the other portions, and therefore crosstalk between adjacent subpixels can be suppressed.

[0191] In this manner, a structure in which the EL layer 113 is formed in an island shape in some light-emitting devices and the EL layer 113 is formed as a continuous layer in other light-emitting devices is also one embodiment of the present invention. For example, a display device of one embodiment of the present invention may have both the region 150A shown in FIG. 2A and the region 150B shown in FIG. 2B.

[0192] 1B and 3A show an example in which color conversion layers 135R and 135G and coloring layers 132R, 132G, and 132B are provided directly on the light-emitting device via a protective layer 131. This configuration improves the accuracy of alignment between the light-emitting device and the color conversion layer or coloring layer. Furthermore, by positioning the light-emitting device and the color conversion layer closer together, light that leaks without being color-converted can be suppressed, which is preferable. Furthermore, by positioning the light-emitting device and the coloring layer closer together, color mixing can be suppressed and viewing angle characteristics can be improved, which is preferable.

[0193] 4 to 7 show cross-sectional views taken along the dashed dotted line X1-X2 in FIG. 1A.

[0194] 4A differs from the configuration shown in FIG. 1B in that it does not have the colored layer 132B. For example, when a configuration that emits blue light is applied to the EL layer 113, the colored layer 132B may not be provided as shown in FIG. 4A. The blue light emitted by the light-emitting device 130B is extracted to the outside of the display device through the protective layer 131, the resin layer 122, and the substrate 120.

[0195] 4B , the substrate 120 provided with the color conversion layers 135R, 135G and the colored layers 132R, 132G, and 132B may be bonded to the protective layer 131 with a resin layer 122. By providing the color conversion layers 135R, 135G and the colored layers 132R, 132G, and 132B on the substrate 120, the temperature of the heat treatment in the process of forming the color conversion layers 135R, 135G and the colored layers 132R, 132G, and 132B can be increased.

[0196] The substrate 120 is provided with colored layers 132R, 132G, and 132B, with a color conversion layer 135R provided at a position overlapping the colored layer 132R, and a color conversion layer 135G provided at a position overlapping the colored layer 132G.

[0197] Alternatively, as shown in FIG. 4C , color conversion layers 135R and 135G may be provided directly on the light-emitting device via a protective layer 131, and a substrate 120 provided with colored layers 132R, 132G, and 132B may be bonded to the color conversion layers 135R and 135G and the protective layer 131 using a resin layer 122.

[0198] In this way, the arrangement of the light-emitting device, color conversion layer, and colored layer can be appropriately selected from various configurations in which the color conversion layer is located between the light-emitting device and the colored layer.

[0199] 5A and 5B, a gap 137 may be present between the color conversion layer and the colored layer. A structure having a gap 137 between the color conversion layer and the colored layer can also be called an air gap structure.

[0200] 5A , an insulating layer 136 is provided to cover the ends of color conversion layers 135R and 135G, and openings are provided in insulating layer 136 that reach the upper surfaces of color conversion layers 135R and 135G. Furthermore, an insulating layer 138 is provided on substrate 120 with colored layers 132R, 132G, and 132B interposed between them. By bonding substrate 120 so that insulating layer 136 and insulating layer 138 are in contact with each other, the portions corresponding to the openings in insulating layer 136 become voids 137.

[0201] As described above, some of the light emitted by the light-emitting device may pass through the color conversion layer without being converted by the color conversion layer. Because the refractive index of the color conversion layer is greater than the refractive index of the voids 137, some of the light emitted from the color conversion layer is reflected by the voids 137 and can return to the color conversion layer. By converting this reflected light by the color conversion layer and extracting it again, the light extraction efficiency can be increased.

[0202] Furthermore, instead of the gap 137, a low refractive index material layer 139 may be provided between the color conversion layer and the colored layer, as shown in FIG. 5C.

[0203] The low refractive index material layer 139 is preferably formed using a material having a lower refractive index than the color conversion layers 135R and 135G. The low refractive index material layer 139 is also preferably formed using a material having a lower refractive index than the resin layer 122.

[0204] One or both of an inorganic insulating material and an organic insulating material can be used for the low-refractive-index material layer 139. The low-refractive-index material layer 139 can be formed using, for example, a material that can be used for the protective layer 131 and a material that can be used for the resin layer 122.

[0205] The insulating layer 136 and the insulating layer 138 can also be called an overcoat layer. For the insulating layers 136 and 138, for example, an organic material that can be used for the protective layer 131 can be used. This is preferable because it can improve the flatness of the surfaces of the insulating layer 136 and the insulating layer 138.

[0206] As shown in Figures 6A, 6B, 7A and 7B, the display device may be provided with a lens array 133. The lens array 133 may be provided over the light emitting device.

[0207] 6A , similar to the configuration shown in FIG. 1B , a color conversion layer 135R overlapping the light-emitting device 130R, a colored layer 132R on the color conversion layer 135R, a color conversion layer 135G overlapping the light-emitting device 130G, a colored layer 132G on the color conversion layer 135G, and a colored layer 132B overlapping the light-emitting device 130B are provided on a protective layer 131. FIG. 6A also shows an example in which an insulating layer 134 is provided to cover the colored layers 132R, 132G, and 132B, and a lens array 133 is provided on the insulating layer 134. By forming the color conversion layers 135R and 135G, the colored layers 132R, 132G, and 132B, and the lens array 133 directly on the substrate on which the light-emitting devices are formed, the accuracy of alignment between the light-emitting devices and the color conversion layer, the colored layer, or the lens array can be improved.

[0208] The insulating layer 134 can be made of either or both of an inorganic insulating film and an organic insulating film. The insulating layer 134 may have a single-layer structure or a multi-layer structure. For example, the insulating layer 134 can be made of a material that can be used for the protective layer 131. The insulating layer 134 preferably has a planarizing function. Since light emitted from the light-emitting device is extracted through the insulating layer 134, the insulating layer 134 preferably has high transparency to visible light.

[0209] 6A, light emitted from the light-emitting device passes through the color conversion layer and the colored layer, and then passes through the lens array 133 to be extracted to the outside of the display device. By positioning the light-emitting device and the colored layer close to each other, color mixing can be suppressed and viewing angle characteristics can be improved, which is preferable. Alternatively, the lens array 133 may be provided on the light-emitting device, and the colored layer may be provided on the lens array 133.

[0210] 6B shows an example in which substrate 120, on which colored layers 132R, 132G, and 132B, color conversion layers 135R and 135G, and lens array 133 are provided, is bonded to protective layer 131 by resin layer 122. By providing colored layers 132R, 132G, and 132B, color conversion layers 135R and 135G, and lens array 133 on substrate 120, the temperature of the heat treatment in the formation process of these layers can be increased.

[0211] Figure 6B shows an example in which colored layers 132R, 132G, and 132B are provided in contact with substrate 120, color conversion layer 135R is provided in contact with colored layer 132R, color conversion layer 135G is provided in contact with colored layer 132G, insulating layer 134 is provided in contact with color conversion layers 135R and 135G and colored layer 132B, and lens array 133 is provided in contact with insulating layer 134.

[0212] In FIG. 6B, light emitted from the light emitting device passes through the lens array 133, then passes through the color conversion layer and the coloring layer, and is extracted to the outside of the display device.

[0213] Alternatively, a lens array 133 may be provided in contact with the substrate 120, an insulating layer 134 may be provided in contact with the lens array 133, and a colored layer and further a color conversion layer may be provided in contact with the insulating layer 134. In this case, light emitted from the light-emitting device passes through the (color conversion layer and) colored layer, then passes through the lens array 133, and is extracted to the outside of the display device.

[0214] 6B, color conversion layers 135R and 135G may be formed on protective layer 131 in contact with it, rather than being formed on substrate 120. In FIG.

[0215] As shown in FIGS. 7A and 7B, one of the lens array and the colored layer may be provided on the protective layer 131, and the other may be provided on the substrate 120.

[0216] Figure 7A shows an example in which a lens array 133 is provided on a light-emitting device via a protective layer 131, and a substrate 120 on which colored layers 132R, 132G, and 132B and color conversion layers 135R and 135G are provided is bonded to the lens array 133 and the protective layer 131 by a resin layer 122.

[0217] In FIG. 7A, color conversion layers 135R and 135G may be formed on protective layer 131 in contact with it, rather than being formed on substrate 120.

[0218] Figure 7B shows an example in which color conversion layers 135R, 135G and colored layers 132R, 132G, 132B are provided on a light-emitting device via a protective layer 131, and a substrate 120 on which a lens array 133 is provided is bonded to the colored layers 132R, 132G, 132B by a resin layer 122.

[0219] In this configuration in which the light-emitting device, color conversion layer, and colored layer are arranged such that the color conversion layer is located between the light-emitting device and the colored layer, various methods can be used to arrange the lens array 133. The lens array 133 can be arranged between the light-emitting device and the color conversion layer, between the color conversion layer and the colored layer, or on the substrate 120 side of the colored layer.

[0220] The convex surface of the lens array 133 may face the substrate 120 side or the light-emitting device side.

[0221] The lens array 133 can be formed using at least one of an inorganic material and an organic material. For example, a material containing a resin can be used for the lenses. Also, a material containing at least one of an oxide and a sulfide can be used for the lenses. For example, a microlens array can be used as the lens array 133. The lens array 133 can be formed directly on the substrate or the light-emitting device, or a separately formed lens array can be bonded thereto.

[0222] It is also preferable that the colored layers of different colors have overlapping portions. The overlapping portions of the colored layers of different colors can function as light-blocking layers, thereby further reducing the reflection of external light.

[0223] In the display device of one embodiment of the present invention, the EL layer is partially thinned or the EL layer is provided in an island shape for each light-emitting device, so that leakage current between subpixels can be suppressed, thereby preventing unintended light emission due to crosstalk and realizing a display device with extremely high contrast.

[0224] In addition, in a display device according to one embodiment of the present invention, a sidewall insulating layer is provided on a side surface of a pixel electrode, which can suppress short circuits in a light-emitting device and provide a highly reliable display device.

[0225] This embodiment mode can be combined with other embodiment modes as appropriate. In addition, in this specification, when a plurality of configuration examples are shown in one embodiment mode, the configuration examples can be combined as appropriate.

[0226] In this embodiment, a manufacturing method of a display device according to one embodiment of the present invention will be described with reference to Fig. 8. Note that the description of the materials and formation methods of each element will be omitted if they are the same as those described in Embodiment 1. In addition, details of the structure of a light-emitting device will be described in Embodiment 5.

[0227] FIG. 8 shows a cross-sectional view taken along dashed dotted line X1-X2 and a cross-sectional view taken along dashed dotted line Y1-Y2 shown in FIG. 1A side by side.

[0228] Thin films (insulating films, semiconductor films, conductive films, etc.) constituting display devices can be formed using a sputtering method, a chemical vapor deposition (CVD) method, a vacuum evaporation method, a pulsed laser deposition (PLD) method, an atomic layer deposition (ALD) method, etc. CVD methods include a plasma enhanced chemical vapor deposition (PECVD) method and a thermal CVD method. One type of thermal CVD method is a metal organic chemical vapor deposition (MOCVD) method.

[0229] Furthermore, thin films (insulating films, semiconductor films, conductive films, etc.) constituting the display device can be formed by a wet film formation method such as spin coating, dipping, spray coating, inkjet, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, or knife coating.

[0230] In particular, vacuum processes such as vapor deposition and solution processes such as spin coating and inkjet printing can be used to fabricate light-emitting devices. Vapor deposition methods include physical vapor deposition (PVD) methods such as sputtering, ion plating, ion beam deposition, molecular beam deposition, and vacuum deposition, and chemical vapor deposition (CVD). In particular, functional layers included in the EL layer (hole injection layer, hole transport layer, hole blocking layer, light-emitting layer, electron blocking layer, electron transport layer, electron injection layer, charge generation layer, etc.) can be formed by vapor deposition (vacuum deposition, etc.), coating methods (dip coating, die coating, bar coating, spin coating, spray coating, etc.), printing methods (inkjet printing, screen (stencil printing), offset (lithographic printing), flexography (relief printing), gravure, microcontact printing, etc.), etc.

[0231] Furthermore, when processing the thin film that constitutes the display device, a photolithography method or the like can be used. Alternatively, the thin film may be processed by a nanoimprint method, a sandblasting method, a lift-off method, or the like. Furthermore, the island-shaped thin film may be directly formed by a film formation method using a shielding mask such as a metal mask.

[0232] There are two typical photolithography methods: one is to form a resist mask on the thin film to be processed, process the thin film by etching or the like, and then remove the resist mask; the other is to form a photosensitive thin film, and then process the thin film into the desired shape by exposure and development.

[0233] In photolithography, the light used for exposure may be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture of these. Other light sources that can be used include ultraviolet light, KrF laser light, ArF laser light, etc. Exposure may also be performed by immersion exposure technology. Extreme ultraviolet (EUV) light or X-rays may also be used as the light used for exposure. An electron beam may also be used instead of the light used for exposure. Extreme ultraviolet light, X-rays, or an electron beam are preferred because they enable extremely fine processing. When exposure is performed by scanning a beam such as an electron beam, a photomask is not required.

[0234] For etching the thin film, dry etching, wet etching, sandblasting, or the like can be used.

[0235] First, an insulating layer 255a, an insulating layer 255b, and an insulating layer 255c are formed in this order over the transistor-including layer 101. Then, pixel electrodes 111R, 111G, and 111B and a conductive layer 123 are formed over the insulating layer 255c (FIG. 8A).

[0236] First, a conductive film that will become a pixel electrode is formed, a resist mask is formed by photolithography, and unnecessary portions of the conductive film are removed by etching. The resist mask is then removed to form the pixel electrodes 111R, 111G, and 111B. The conductive film that will become the pixel electrodes can be formed by, for example, sputtering or vacuum evaporation. The conductive film can be processed by wet etching or dry etching. The conductive film is preferably processed by anisotropic etching.

[0237] When processing the conductive film, it is preferable to process the insulating layer 255c to form a recess in the insulating layer 255c. This allows the height of the sidewall insulating layer 114 to be formed later to be increased. This makes it easier to partially thin the EL layer 113 to be formed later or to divide the EL layer 113 into individual light-emitting devices. Note that other configurations according to one embodiment of the present invention include a configuration in which an opening is provided in the insulating layer 255c and a recess is provided in the insulating layer 255b, and a configuration in which openings are provided in the insulating layers 255b and 255c and a recess is provided in the insulating layer 255a. Furthermore, when the pixel electrode is sufficiently thick, the insulating layer 255c may not necessarily have a recess or an opening.

[0238] In other words, it is preferable that the thickness of the insulating layer 255c in the region that does not overlap with any of the pixel electrodes 111R, 111G, 111B and the conductive layer 123 is smaller than the thickness of the insulating layer 255c in the region that overlaps with the pixel electrodes 111R, 111G, 111B or the conductive layer 123.

[0239] Subsequently, an insulating film 114A is formed on the insulating layer 255c, the pixel electrodes 111R, 111G, and 111B, and the conductive layer 123 (FIG. 8B).

[0240] The insulating film 114A is a layer that will be processed later to become the sidewall insulating layer 114. Therefore, the configuration applicable to the sidewall insulating layer 114 described in the first embodiment can be applied to the insulating film 114A.

[0241] Next, the insulating film 114A is processed to form the sidewall insulating layer 114 ( FIG. 8C ). Processing the insulating film 114A exposes the upper surfaces of the insulating layer 255c, the pixel electrodes 111R, 111G, and 111B, and the conductive layer 123. The sidewall insulating layer 114 is provided so as to contact the side surfaces of the pixel electrodes 111R, 111G, and 111B, and the conductive layer 123.

[0242] For example, the sidewall insulating layer 114 can be formed by uniformly etching the upper surface of the insulating film 114A. Such uniform etching and planarization is also called an etch-back process. The sidewall insulating layer 114 can also be formed by photolithography.

[0243] The insulating film 114A can be processed by wet etching or dry etching, and is preferably processed by dry etching, and is preferably processed by anisotropic etching.

[0244] Note that when processing the insulating film 114A, the insulating layer 255c may also be processed to form a recess in the insulating layer 255c. Forming a recess in the insulating layer 255c makes it easier to partially thin the EL layer 113 to be formed later or to divide the EL layer 113 into individual light-emitting devices. Note that other configurations according to one embodiment of the present invention include a configuration in which an opening is provided in the insulating layer 255c and a recess is provided in the insulating layer 255b, and a configuration in which openings are provided in the insulating layers 255b and 255c and a recess is provided in the insulating layer 255a. Furthermore, when the pixel electrode is sufficiently thick, the insulating layer 255c may not necessarily have a recess or an opening.

[0245] In other words, in the insulating layer 255c shown in FIG. 8C, the film thickness of the exposed region (the region that does not overlap with any of the sidewall insulating layer 114, the pixel electrodes 111R, 111G, 111B, and the conductive layer 123) may be smaller than the film thickness of the region that overlaps with the sidewall insulating layer 114.

[0246] The end of the sidewall insulating layer 114 may have a rounded shape. For example, when the sidewall insulating layer 114 is formed by using a dry etching method to etch the upper part of the insulating film 114A by anisotropic etching, the end of the sidewall insulating layer 114 becomes rounded as shown in Figures 8C, 1B, 2A to 2D, etc. Making the end of the sidewall insulating layer 114 rounded is preferable because it improves the coverage of a film to be formed later.

[0247] Next, the EL layer 113 is formed on the pixel electrodes 111R, 111G, and 111B ( FIG. 8D ). The EL layer 113 contains a light-emitting material that emits blue light. The EL layer 113 may further contain a light-emitting material that emits light with a wavelength longer than blue. FIG. 8D shows an example in which an island-shaped EL layer 113 is provided for each light-emitting device. That is, an island-shaped EL layer 113 is provided on each of the pixel electrodes 111R, 111G, and 111B.

[0248] A material layer 113s is provided on the insulating layer 255c in the region between the pixel electrodes 111R and 111G. Similarly, a material layer 113s is provided on the insulating layer 255c in the region between the pixel electrodes 111G and 111B and in the region between the pixel electrodes 111B and 111R. The material layer 113s is formed in the same process as the EL layer 113 and has the same configuration.

[0249] 8D , in the cross-sectional view taken along the dashed dotted line Y1-Y2, the EL layer 113 is not formed on the conductive layer 123. For example, by using an area mask, the EL layer 113 can be formed only in a desired region.

[0250] The EL layer 113 can be formed by, for example, a vapor deposition method, specifically a vacuum deposition method. Alternatively, the EL layer 113 may be formed by a transfer method, a printing method, an inkjet method, a coating method, or the like.

[0251] Subsequently, the common electrode 115 is formed on the EL layer 113 and the conductive layer 123 (FIG. 8E).

[0252] For example, sputtering or vacuum deposition can be used to form the common electrode 115. Alternatively, a film formed by deposition and a film formed by sputtering may be stacked.

[0253] When forming the common electrode 115, it is preferable to reduce the distance between the film formation source and the substrate. For example, it is preferable to reduce the distance between the film formation source and the substrate compared to when forming the EL layer 113. This improves the coverage of the common electrode 115 on the surface to be formed, and prevents the formation of locally thin portions in the common electrode 115. Therefore, it is possible to prevent poor connection due to disconnected portions in the common electrode 115 and an increase in electrical resistance due to locally thin portions in the film thickness.

[0254] Thereafter, a protective layer 131 is formed on the common electrode 115. When a configuration having a color conversion layer and a colored layer on the protective layer 131 as shown in FIG. 1B is applied, color conversion layers 135R, 135G and colored layers 132R, 132G, 132B are then provided on the protective layer 131. Then, a display device can be fabricated by bonding a substrate 120 onto the colored layers 132R, 132G, 132B using a resin layer 122 (FIG. 1B). When a configuration having a color conversion layer and a colored layer on the substrate 120 as shown in FIG. 4B is applied, a display device can be fabricated by first providing the colored layers 132R, 132G, 132B and color conversion layers 135R, 135G on the substrate 120 and then bonding the substrate 120.

[0255] The protective layer 131 can be formed by vacuum deposition, sputtering, CVD, ALD, or the like.

[0256] As described above, in the manufacturing method of the display device of this embodiment, the island-shaped EL layer 113 is formed without using a fine metal mask, and therefore, the island-shaped EL layer 113 can be formed with a uniform thickness. This makes it possible to realize a high-definition display device or a display device with a high aperture ratio. Furthermore, even if the definition or aperture ratio is high and the distance between subpixels is extremely short, the EL layers 113 in adjacent subpixels can be prevented from contacting each other. Therefore, it is possible to prevent leakage current from occurring between subpixels. This makes it possible to prevent unintended light emission due to crosstalk, and realize a display device with extremely high contrast.

[0257] Furthermore, in the manufacturing method of the display device of this embodiment mode, sub-pixels of three colors can be formed separately by forming only one type of EL layer. Therefore, the number of manufacturing steps is reduced, and the display device can be manufactured with high yield.

[0258] This embodiment mode can be combined with other embodiment modes as appropriate.

[0259] Embodiment 3 In this embodiment, a display device according to one embodiment of the present invention will be described with reference to FIGS.

[0260] [Pixel Layout] In this embodiment, pixel layouts different from that shown in FIG. 1A will be mainly described. There are no particular limitations on the arrangement of sub-pixels, and various methods can be applied. Examples of sub-pixel arrangements include a stripe arrangement, an S-stripe arrangement, a matrix arrangement, a delta arrangement, a Bayer arrangement, and a pentile arrangement.

[0261] The top shape of the sub-pixels shown in the drawings in this embodiment mode corresponds to the top shape of the light-emitting region.

[0262] The top surface shape of the subpixel may be, for example, a triangle, a quadrangle (including a rectangle, a diamond, and a square), a polygon such as a pentagon, a polygon with rounded corners, an ellipse, or a circle.

[0263] Furthermore, the circuit layout constituting the subpixel is not limited to the range of the subpixel shown in the figure, and the circuit components may be arranged outside of it. The arrangement of the circuit and the arrangement of the light-emitting devices do not necessarily have to be the same, and different arrangement methods may also be used. For example, the arrangement of the circuit may be a stripe arrangement, and the arrangement of the light-emitting devices may be an S-stripe arrangement.

[0264] An S-stripe arrangement is applied to the pixel 110 shown in Fig. 9A. The pixel 110 shown in Fig. 9A is composed of three sub-pixels, 110a, 110b, and 110c.

[0265] The pixel 110 shown in Figure 9B includes a subpixel 110a having a substantially triangular or trapezoidal top surface shape with rounded corners, a subpixel 110b having a substantially triangular or trapezoidal top surface shape with rounded corners, and a subpixel 110c having a substantially rectangular or hexagonal top surface shape with rounded corners. Furthermore, the subpixel 110b has a larger light-emitting area than the subpixel 110a. In this manner, the shape and size of each subpixel can be determined independently. For example, the more reliable the light-emitting device, the smaller the size of the subpixel can be.

[0266] The Pentile arrangement is applied to the pixels 124a and 124b shown in Fig. 9C. Fig. 9C shows an example in which a pixel 124a having subpixels 110a and 110b and a pixel 124b having subpixels 110b and 110c are arranged alternately.

[0267] 9D to 9F are arranged in a delta configuration. Pixel 124a has two subpixels (subpixels 110a and 110b) in the top row (first row) and one subpixel (subpixel 110c) in the bottom row (second row). Pixel 124b has one subpixel (subpixel 110c) in the top row (first row) and two subpixels (subpixels 110a and 110b) in the bottom row (second row).

[0268] Figure 9D is an example in which each subpixel has an approximately rectangular top surface shape with rounded corners, Figure 9E is an example in which each subpixel has a circular top surface shape, and Figure 9F is an example in which each subpixel has an approximately hexagonal top surface shape with rounded corners.

[0269] In Figure 9F, each subpixel is arranged inside a closely packed hexagonal region. Each subpixel is arranged so that it is surrounded by six other subpixels when focusing on one subpixel. Furthermore, subpixels that emit light of the same color are arranged so that they are not adjacent to each other. For example, when focusing on subpixel 110a, three subpixels 110b and three subpixels 110c are arranged alternately so as to surround it.

[0270] 9G shows an example in which subpixels of each color are arranged in a zigzag pattern. Specifically, when viewed from above, the positions of the upper sides of two subpixels aligned in the column direction (for example, subpixels 110a and 110b, or subpixels 110b and 110c) are misaligned.

[0271] 9A to 9G, it is preferable that the subpixel 110a be the subpixel R that emits red light, the subpixel 110b be the subpixel G that emits green light, and the subpixel 110c be the subpixel B that emits blue light. Note that the configuration of the subpixels is not limited to this, and the colors that the subpixels emit and their arrangement order can be determined appropriately. For example, the subpixel 110b may be the subpixel R that emits red light, and the subpixel 110a may be the subpixel G that emits green light.

[0272] In photolithography, the finer the pattern to be processed, the more the influence of light diffraction cannot be ignored. This reduces the fidelity when transferring a photomask pattern by exposure, making it difficult to process the resist mask into a desired shape. Therefore, even if the photomask pattern is rectangular, a pattern with rounded corners is likely to be formed. Therefore, the top surface shape of the pixel electrode may be a polygon with rounded corners, an ellipse, a circle, or the like. In a display device according to one embodiment of the present invention, the top surface shape of the EL layer and further the light-emitting device may be a polygon with rounded corners, an ellipse, a circle, or the like, influenced by the top surface shape of the pixel electrode.

[0273] In order to make the top surface shape of the pixel electrode into a desired shape, a technique for correcting the mask pattern in advance (OPC (Optical Proximity Correction) technique) may be used so that the design pattern and the transfer pattern coincide with each other. Specifically, the OPC technique adds a correction pattern to the corners of figures on the mask pattern.

[0274] As shown in FIGS. 10A to 10I, a pixel can be configured to have four types of sub-pixels.

[0275] The pixel 110 shown in FIGS. 10A to 10C is configured in a stripe arrangement.

[0276] FIG. 10A shows an example in which each subpixel has a rectangular top surface shape, FIG. 10B shows an example in which each subpixel has a top surface shape that is a combination of two semicircles and a rectangle, and FIG. 10C shows an example in which each subpixel has an elliptical top surface shape.

[0277] The pixels 110 shown in FIGS. 10D to 10F are arranged in a matrix.

[0278] Figure 10D is an example in which each subpixel has a square top surface shape, Figure 10E is an example in which each subpixel has an approximately square top surface shape with rounded corners, and Figure 10F is an example in which each subpixel has a circular top surface shape.

[0279] 10G and 10H show an example in which one pixel 110 is configured in two rows and three columns.

[0280] 10G has three subpixels (subpixels 110a, 110b, and 110c) in the top row (first row) and one subpixel (subpixel 110d) in the bottom row (second row). In other words, pixel 110 has subpixel 110a in the left column (first column), subpixel 110b in the center column (second column), subpixel 110c in the right column (third column), and subpixel 110d across these three columns.

[0281] The pixel 110 shown in FIG. 10H has three subpixels (subpixels 110a, 110b, and 110c) in the top row (first row) and three subpixels 110d in the bottom row (second row). In other words, the pixel 110 has subpixels 110a and 110d in the left column (first column), subpixels 110b and 110d in the center column (second column), and subpixels 110c and 110d in the right column (third column). By aligning the subpixels in the top and bottom rows as shown in FIG. 10H, it is possible to efficiently remove dust and other particles that may occur during the manufacturing process. Therefore, a display device with high display quality can be provided.

[0282] FIG. 10I shows an example in which one pixel 110 is configured in three rows and two columns.

[0283] 10I has subpixel 110a in the top row (first row), subpixel 110b in the middle row (second row), subpixel 110c across the first and second rows, and one subpixel (subpixel 110d) in the bottom row (third row). In other words, pixel 110 has subpixels 110a and 110b in the left column (first column), subpixel 110c in the right column (second column), and subpixel 110d across these two columns.

[0284] The pixel 110 shown in FIGS. 10A to 10I is composed of four sub-pixels 110a, 110b, 110c, and 110d.

[0285] The sub-pixels 110a, 110b, 110c, and 110d may each have a light-emitting device that emits light of a different color, such as sub-pixels of four colors R, G, B, and white (W), sub-pixels of four colors R, G, B, and Y, or sub-pixels of R, G, B, and infrared (IR).

[0286] 10A to 10I , it is preferable that, for example, the subpixel 110a be the subpixel R that emits red light, the subpixel 110b be the subpixel G that emits green light, the subpixel 110c be the subpixel B that emits blue light, and the subpixel 110d be any one of the subpixels W that emit white light, Y that emit yellow light, and IR that emit near-infrared light. With such a configuration, the pixel 110 shown in FIGS. 10G and 10H has a stripe layout of R, G, and B, thereby improving display quality. Furthermore, the pixel 110 shown in FIG. 10I has a so-called S-stripe layout of R, G, and B, thereby improving display quality.

[0287] As described above, in the display device of one embodiment of the present invention, various layouts can be applied to pixels each including a subpixel having a light-emitting device.

[0288] This embodiment mode can be combined with other embodiment modes as appropriate.

[0289] Embodiment 4 In this embodiment, a display device of one embodiment of the present invention will be described with reference to FIGS.

[0290] The display device of the present embodiment can be a high-definition display device, and can therefore be used, for example, as a display unit for a wristwatch-type or bracelet-type information terminal (wearable device), as well as a display unit for a wearable device that can be worn on the head, such as a head-mounted display (HMD) for VR, or a glasses-type AR device.

[0291] The display device of this embodiment can be a high-resolution display device or a large-sized display device. Therefore, the display device of this embodiment can be used in electronic devices having relatively large screens, such as television devices, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as in display units of digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and sound reproducing devices.

[0292] 11A shows a perspective view of a display module 280. The display module 280 includes a display device 100A and an FPC 290. Note that the display device included in the display module 280 is not limited to the display device 100A, and may be any of the display devices 100B to 100F described below.

[0293] The display module 280 has a substrate 291 and a substrate 292. The display module 280 has a display portion 281. The display portion 281 is a region that displays an image in the display module 280, and is a region where light from each pixel provided in a pixel portion 284 (described later) can be viewed.

[0294] 11B is a perspective view schematically showing the configuration on the substrate 291 side. A circuit portion 282, a pixel circuit portion 283 on the circuit portion 282, and a pixel portion 284 on the pixel circuit portion 283 are stacked on the substrate 291. A terminal portion 285 for connecting to the FPC 290 is provided in a portion of the substrate 291 that does not overlap with the pixel portion 284. The terminal portion 285 and the circuit portion 282 are electrically connected by a wiring portion 286 composed of a plurality of wirings.

[0295] The pixel section 284 has a plurality of periodically arranged pixels 284a. An enlarged view of one pixel 284a is shown on the right side of Fig. 11B. The various configurations described in the previous embodiments can be applied to the pixel 284a. Fig. 11B shows an example in which the pixel 284a has the same configuration as the pixel 110 shown in Fig. 1A.

[0296] The pixel circuit section 283 has a plurality of pixel circuits 283a arranged periodically.

[0297] One pixel circuit 283a is a circuit that controls the driving of multiple elements included in one pixel 284a. One pixel circuit 283a can be configured to have three circuits that control the light emission of one light-emitting device. For example, the pixel circuit 283a can be configured to have at least one selection transistor, one current control transistor (drive transistor), and a capacitor for each light-emitting device. In this case, a gate signal is input to the gate of the selection transistor, and a source signal is input to the source. This realizes an active matrix display device.

[0298] The circuit portion 282 includes a circuit for driving each pixel circuit 283 a of the pixel circuit portion 283. For example, the circuit portion 282 preferably includes one or both of a gate line driver circuit and a source line driver circuit. In addition, the circuit portion 282 may include at least one of an arithmetic circuit, a memory circuit, a power supply circuit, and the like.

[0299] The FPC 290 functions as wiring for supplying a video signal, a power supply potential, or the like from the outside to the circuit portion 282. An IC may be mounted on the FPC 290.

[0300] The display module 280 can be configured such that one or both of the pixel circuit unit 283 and the circuit unit 282 are provided overlapping below the pixel unit 284, thereby enabling the aperture ratio (effective display area ratio) of the display unit 281 to be extremely high. For example, the aperture ratio of the display unit 281 can be 40% or more and less than 100%, preferably 50% or more and 95% or less, and more preferably 60% or more and 95% or less. Furthermore, the pixels 284a can be arranged at an extremely high density, enabling the resolution of the display unit 281 to be extremely high. For example, it is preferable that the pixels 284a be arranged in the display unit 281 at a resolution of 2000 ppi or more, preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 6000 ppi or more, and 20,000 ppi or less, or 30,000 ppi or less.

[0301] Because such a display module 280 has extremely high resolution, it can be suitably used in VR devices such as HMDs or eyeglass-type AR devices. For example, even in a configuration in which the display unit of the display module 280 is viewed through lenses, the display module 280 has an extremely high-resolution display unit 281, so even when the display unit is enlarged with lenses, the pixels are not visible, allowing for a highly immersive display. Furthermore, the display module 280 is not limited to this, and can be suitably used in electronic devices with relatively small displays. For example, it can be suitably used in the display unit of a wearable electronic device such as a wristwatch.

[0302] [Display device 100A] The display device 100A shown in Figure 12 has a substrate 301, a light-emitting device 130R, a light-emitting device 130G, a light-emitting device 130B, a color conversion layer 135R, a color conversion layer 135G, a colored layer 132R, a colored layer 132G, a colored layer 132B, a capacitor 240, and a transistor 310.

[0303] 11B, the subpixel 11R has a light-emitting device 130R, a color conversion layer 135R, and a colored layer 132R. The subpixel 11G has a light-emitting device 130G, a color conversion layer 135G, and a colored layer 132G. The subpixel 11B has a light-emitting device 130B and a colored layer 132B. In the subpixel 11R, light emitted from the light-emitting device 130R is extracted as red light (R) to the outside of the display device 100A via the color conversion layer 135R and the colored layer 132R. Similarly, in the subpixel 11G, light emitted from the light-emitting device 130G is extracted as green light (G) to the outside of the display device 100A via the color conversion layer 135G and the colored layer 132G. In the subpixel 11B, light emitted from the light-emitting device 130B is extracted as blue light (B) to the outside of the display device 100A via the colored layer 132B.

[0304] 11A and 11B. The stacked structure from the substrate 301 to the insulating layer 255c corresponds to the layer 101 including the transistor in Embodiment 1.

[0305] The transistor 310 has a channel formation region in a substrate 301. The substrate 301 can be, for example, a semiconductor substrate such as a single crystal silicon substrate. The transistor 310 includes a part of the substrate 301, a conductive layer 311, a low-resistance region 312, an insulating layer 313, and an insulating layer 314. The conductive layer 311 functions as a gate electrode. The insulating layer 313 is located between the substrate 301 and the conductive layer 311 and functions as a gate insulating layer. The low-resistance region 312 is a region in which the substrate 301 is doped with impurities and functions as one of a source and a drain. The insulating layer 314 is provided to cover a side surface of the conductive layer 311.

[0306] An element isolation layer 315 is provided between two adjacent transistors 310 so as to be embedded in the substrate 301 .

[0307] In addition, an insulating layer 261 is provided to cover the transistor 310 , and a capacitor 240 is provided over the insulating layer 261 .

[0308] The capacitor 240 has a conductive layer 241, a conductive layer 245, and an insulating layer 243 located therebetween. The conductive layer 241 functions as one electrode of the capacitor 240, the conductive layer 245 functions as the other electrode of the capacitor 240, and the insulating layer 243 functions as a dielectric of the capacitor 240.

[0309] The conductive layer 241 is provided over the insulating layer 261 and is buried in the insulating layer 254. The conductive layer 241 is electrically connected to one of the source and drain of the transistor 310 by a plug 271 buried in the insulating layer 261. The insulating layer 243 is provided to cover the conductive layer 241. The conductive layer 245 is provided in a region overlapping with the conductive layer 241 with the insulating layer 243 interposed therebetween.

[0310] Note that at least one of the conductive layer levels included in the layer 101 including the transistor preferably includes a conductive layer surrounding the outside of the display portion 281 (or the pixel portion 284). The conductive layer can also be called a guard ring. By providing the conductive layer, it is possible to prevent elements such as transistors and light-emitting devices from being damaged by a high voltage applied to the elements due to charging caused by electrostatic discharge (ESD) or a process using plasma.

[0311] An insulating layer 255a is provided to cover the capacitor 240, an insulating layer 255b is provided on the insulating layer 255a, and an insulating layer 255c is provided on the insulating layer 255b. The light-emitting device 130R, the light-emitting device 130G, and the light-emitting device 130B are provided on the insulating layer 255c. Figure 12 shows an example in which the light-emitting device 130R, the light-emitting device 130G, and the light-emitting device 130B have the same stacked structure as the stacked structure shown in Figure 1B.

[0312] The pixel electrode 111R, the pixel electrode 111G, and the pixel electrode 111B are electrically connected to one of the source and drain of the transistor 310 via a plug 256 embedded in the insulating layer 243, the insulating layer 255a, the insulating layer 255b, and the insulating layer 255c, a conductive layer 241 embedded in the insulating layer 254, and a plug 271 embedded in the insulating layer 261. The height of the surface of the insulating layer 255c that contacts the pixel electrode and the height of the surface of the plug 256 that contacts the pixel electrode are the same or approximately the same. Various conductive materials can be used for the plug.

[0313] A protective layer 131 is provided on the light-emitting devices 130R, 130G, and 130B. A color conversion layer 135R is provided on the protective layer 131 at a position overlapping the light-emitting device 130R, and a coloring layer 132R is provided on the color conversion layer 135R. A color conversion layer 135G is provided on the protective layer 131 at a position overlapping the light-emitting device 130G, and a coloring layer 132G is provided on the color conversion layer 135G. A coloring layer 132B is provided on the protective layer 131 at a position overlapping the light-emitting device 130B. A substrate 120 is bonded to the coloring layers 132R, 132G, and 132B by a resin layer 122. For details of the components from the light-emitting devices to the substrate 120, see embodiment 1. The substrate 120 corresponds to the substrate 292 in FIG. 11A .

[0314] 13 has a configuration in which a transistor 310A and a transistor 310B, each having a channel formed in a semiconductor substrate, are stacked. Note that in the following description of the display device, descriptions of parts that are the same as those of the display device described above may be omitted.

[0315] The display device 100B has a configuration in which a substrate 301B on which a transistor 310B, a capacitor 240, and a light-emitting device are provided and a substrate 301A on which a transistor 310A is provided are bonded together.

[0316] Here, it is preferable to provide an insulating layer 345 on the lower surface of the substrate 301B. It is also preferable to provide an insulating layer 346 on the insulating layer 261 provided on the substrate 301A. The insulating layers 345 and 346 are insulating layers that function as protective layers and can suppress the diffusion of impurities into the substrates 301B and 301A. As the insulating layers 345 and 346, an inorganic insulating film that can be used for the protective layer 131 or the insulating layer 332 can be used.

[0317] The substrate 301B is provided with a plug 343 that penetrates the substrate 301B and an insulating layer 345. Here, it is preferable to provide an insulating layer 344 to cover the side surface of the plug 343. The insulating layer 344 is an insulating layer that functions as a protective layer and can suppress the diffusion of impurities into the substrate 301B. The insulating layer 344 can be an inorganic insulating film that can be used for the protective layer 131.

[0318] Furthermore, a conductive layer 342 is provided on the back surface (surface opposite to the substrate 120 side) of the substrate 301B, below the insulating layer 345. The conductive layer 342 is preferably provided so as to be embedded in the insulating layer 335. Furthermore, the lower surfaces of the conductive layer 342 and the insulating layer 335 are preferably flattened. Here, the conductive layer 342 is electrically connected to the plug 343.

[0319] On the other hand, in the substrate 301A, a conductive layer 341 is provided on an insulating layer 346. The conductive layer 341 is preferably provided so as to be embedded in the insulating layer 336. In addition, the upper surfaces of the conductive layer 341 and the insulating layer 336 are preferably flattened.

[0320] The substrate 301A and the substrate 301B are electrically connected by bonding the conductive layer 341 and the conductive layer 342. Here, by improving the flatness of the surface formed by the conductive layer 342 and the insulating layer 335 and the surface formed by the conductive layer 341 and the insulating layer 336, the conductive layer 341 and the conductive layer 342 can be favorably bonded to each other.

[0321] It is preferable to use the same conductive material for the conductive layers 341 and 342. For example, a metal film containing an element selected from Al, Cr, Cu, Ta, Ti, Mo, and W, or a metal nitride film containing the above elements (titanium nitride film, molybdenum nitride film, tungsten nitride film), etc., can be used. In particular, it is preferable to use copper for the conductive layers 341 and 342. This allows the use of Cu-Cu (copper-copper) direct bonding technology (technology that achieves electrical conductivity by connecting Cu (copper) pads together).

[0322] [Display Device 100C] A display device 100C shown in FIG. 14 has a configuration in which a conductive layer 341 and a conductive layer 342 are joined via a bump 347.

[0323] 14 , by providing a bump 347 between the conductive layer 341 and the conductive layer 342, the conductive layer 341 and the conductive layer 342 can be electrically connected. The bump 347 can be formed using a conductive material containing, for example, gold (Au), nickel (Ni), indium (In), tin (Sn), or the like. Alternatively, for example, solder may be used as the bump 347. An adhesive layer 348 may be provided between the insulating layer 345 and the insulating layer 346. When the bump 347 is provided, the insulating layer 335 and the insulating layer 336 may not be provided.

[0324] [Display Device 100D] A display device 100D shown in FIG. 15 differs from the display device 100A mainly in the configuration of the transistors.

[0325] The transistor 320 is a transistor (OS transistor) in which a metal oxide (also referred to as an oxide semiconductor) is used for a semiconductor layer in which a channel is formed.

[0326] The transistor 320 includes a semiconductor layer 321 , an insulating layer 323 , a conductive layer 324 , a pair of conductive layers 325 , an insulating layer 326 , and a conductive layer 327 .

[0327] 11A and 11B. The stacked structure from the substrate 331 to the insulating layer 255c corresponds to the layer 101 including the transistor in Embodiment 1. The substrate 331 can be an insulating substrate or a semiconductor substrate.

[0328] An insulating layer 332 is provided over a substrate 331. The insulating layer 332 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the substrate 331 to the transistor 320 and prevents oxygen from being released from the semiconductor layer 321 toward the insulating layer 332. The insulating layer 332 can be, for example, a film through which hydrogen or oxygen is less likely to diffuse than a silicon oxide film, such as an aluminum oxide film, a hafnium oxide film, or a silicon nitride film.

[0329] A conductive layer 327 is provided over the insulating layer 332, and an insulating layer 326 is provided to cover the conductive layer 327. The conductive layer 327 functions as a first gate electrode of the transistor 320, and part of the insulating layer 326 functions as a first gate insulating layer. An oxide insulating film such as a silicon oxide film is preferably used for at least a portion of the insulating layer 326 that is in contact with the semiconductor layer 321. The top surface of the insulating layer 326 is preferably planarized.

[0330] The semiconductor layer 321 is provided over the insulating layer 326. The semiconductor layer 321 preferably includes a metal oxide (also referred to as an oxide semiconductor) film having semiconductor properties. A pair of conductive layers 325 is provided over and in contact with the semiconductor layer 321 and functions as a source electrode and a drain electrode.

[0331] An insulating layer 328 is provided to cover top surfaces and side surfaces of the pair of conductive layers 325 and side surfaces of the semiconductor layer 321, and an insulating layer 264 is provided over the insulating layer 328. The insulating layer 328 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the insulating layer 264 or the like into the semiconductor layer 321 and prevents oxygen from being released from the semiconductor layer 321. The insulating layer 328 can be an insulating film similar to the insulating layer 332.

[0332] Openings reaching the semiconductor layer 321 are provided in the insulating layer 328 and the insulating layer 264. Inside the openings, an insulating layer 323 and a conductive layer 324 are buried, which are in contact with side surfaces of the insulating layer 264, the insulating layer 328, and the conductive layer 325 and an upper surface of the semiconductor layer 321. The conductive layer 324 functions as a second gate electrode, and the insulating layer 323 functions as a second gate insulating layer.

[0333] The top surfaces of the conductive layer 324, the insulating layer 323, and the insulating layer 264 are planarized so that their heights are the same or approximately the same, and insulating layers 329 and 265 are provided to cover them.

[0334] The insulating layer 264 and the insulating layer 265 function as interlayer insulating layers. The insulating layer 329 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the insulating layer 265 or the like to the transistor 320. The insulating layer 329 can be formed using an insulating film similar to the insulating layer 328 and the insulating layer 332.

[0335] A plug 274 electrically connected to one of the pair of conductive layers 325 is provided to be embedded in the insulating layer 265, the insulating layer 329, and the insulating layer 264. Here, the plug 274 preferably includes a conductive layer 274a covering the side surfaces of the openings of the insulating layer 265, the insulating layer 329, the insulating layer 264, and the insulating layer 328 and part of the top surface of the conductive layer 325, and a conductive layer 274b in contact with the top surface of the conductive layer 274a. In this case, the conductive layer 274a is preferably made of a conductive material through which hydrogen and oxygen do not easily diffuse.

[0336] [Display Device 100E] A display device 100E illustrated in FIG. 16 has a stacked structure of a transistor 320A and a transistor 320B each including an oxide semiconductor as a semiconductor in which a channel is formed.

[0337] The transistor 320A, the transistor 320B, and the surrounding configurations thereof can be referred to the display device 100D.

[0338] Although two transistors including an oxide semiconductor are stacked here, the present invention is not limited to this structure, and for example, three or more transistors may be stacked.

[0339] [Display Device 100F] A display device 100F shown in FIG. 17 has a stacked structure of a transistor 310 in which a channel is formed in a substrate 301 and a transistor 320 in which a channel is formed and a semiconductor layer containing metal oxide.

[0340] An insulating layer 261 is provided to cover the transistor 310, and a conductive layer 251 is provided over the insulating layer 261. An insulating layer 262 is provided to cover the conductive layer 251, and a conductive layer 252 is provided over the insulating layer 262. The conductive layers 251 and 252 each function as wirings. An insulating layer 263 and an insulating layer 332 are provided to cover the conductive layer 252, and the transistor 320 is provided over the insulating layer 332. An insulating layer 265 is provided to cover the transistor 320, and a capacitor 240 is provided over the insulating layer 265. The capacitor 240 and the transistor 320 are electrically connected by a plug 274.

[0341] The transistor 320 can be used as a transistor that forms a pixel circuit. The transistor 310 can be used as a transistor that forms a pixel circuit or a driver circuit (gate line driver circuit, source line driver circuit) that drives the pixel circuit. The transistors 310 and 320 can be used as transistors that form various circuits such as an arithmetic circuit or a memory circuit.

[0342] By using this configuration, not only pixel circuits but also driving circuits etc. can be formed directly below the light-emitting device, making it possible to make the display device smaller than when driving circuits are provided around the periphery of the display area.

[0343] [Display Device 100G] FIG. 18 shows a perspective view of the display device 100G, and FIG. 19A shows a cross-sectional view of the display device 100G.

[0344] The display device 100G has a configuration in which a substrate 152 and a substrate 151 are bonded together. In Fig. 18, the substrate 152 is indicated by a dashed line.

[0345] The display device 100G includes a display portion 162, a connection portion 140, a circuit 164, wiring 165, and the like. Fig. 18 shows an example in which an IC 173 and an FPC 172 are mounted on the display device 100G. Therefore, the configuration shown in Fig. 18 can also be said to be a display module including the display device 100G, an IC (integrated circuit), and an FPC.

[0346] The connection portion 140 is provided on the outside of the display portion 162. The connection portion 140 can be provided along one side or multiple sides of the display portion 162. There may be one or more connection portions 140. FIG. 18 shows an example in which the connection portion 140 is provided so as to surround the four sides of the display portion. The connection portion 140 electrically connects the common electrode of the light-emitting device and the conductive layer, and can supply a potential to the common electrode.

[0347] The circuit 164 can be, for example, a scanning line driver circuit.

[0348] The wiring 165 has a function of supplying signals and power to the display portion 162 and the circuit 164. The signals and power are input to the wiring 165 from the outside via the FPC 172 or input to the wiring 165 from the IC 173.

[0349] 18 shows an example in which an IC 173 is provided on a substrate 151 by a chip-on-glass (COG) method or a chip-on-film (COF) method. The IC 173 may be, for example, an IC having a scanning line driver circuit or a signal line driver circuit. The display device 100G and the display module may not include an IC. Alternatively, the IC may be mounted on an FPC by a COF method or the like.

[0350] Figure 19A shows an example of a cross section of the display device 100G when a portion of the area including the FPC 172, a portion of the circuit 164, a portion of the display unit 162, a portion of the connection portion 140, and a portion of the area including the end portion are cut away.

[0351] The display device 100G shown in Figure 19A has, between the substrate 151 and the substrate 152, a transistor 201, a transistor 205, a light-emitting device 130R, a light-emitting device 130G, a light-emitting device 130B, a color conversion layer 135R, a color conversion layer 135G, a coloring layer 132R that transmits red light, a coloring layer 132G that transmits green light, and a coloring layer 132B that transmits blue light, etc.

[0352] The light-emitting devices 130R, 130G, and 130B each have the same structure as the laminated structure shown in Fig. 1B, except that the configuration of the pixel electrodes is different. For details of the light-emitting devices, refer to Embodiment 1.

[0353] The light-emitting device 130R has a conductive layer 112R, a conductive layer 126R on the conductive layer 112R, and a conductive layer 129R on the conductive layer 126R. All of the conductive layers 112R, 126R, and 129R may be called pixel electrodes, or some of them may be called pixel electrodes.

[0354] Light emitting device 130G includes conductive layer 112G, conductive layer 126G on conductive layer 112G, and conductive layer 129G on conductive layer 126G.

[0355] Light emitting device 130B includes conductive layer 112B, conductive layer 126B on conductive layer 112B, and conductive layer 129B on conductive layer 126B.

[0356] The conductive layer 112R is connected to the conductive layer 222b of the transistor 205 through an opening provided in the insulating layer 214. It is preferable that the end of the conductive layer 112R, the end of the conductive layer 126R, and the end of the conductive layer 129R are aligned or approximately aligned. This allows the height of the sidewall insulating layer 114 to be equal to or greater than the sum of the thicknesses of the three conductive layers, which makes it easy to thin a part of the EL layer or to divide the EL layer by the sidewall insulating layer 114. For example, conductive layers functioning as reflective electrodes can be used for the conductive layer 112R and the conductive layer 126R, and a conductive layer functioning as a transparent electrode can be used for the conductive layer 129R.

[0357] The conductive layers 112G, 126G, 129G and the conductive layers 112B, 126B, 129B are similar to the conductive layers 112R, 126R, 129R, and therefore will not be described in detail.

[0358] The conductive layers 112R, 112G, and 112B are formed to cover the openings provided in the insulating layer 214. A layer 128 is filled in the recesses of the conductive layers 112R, 112G, and 112B.

[0359] The layer 128 has a function of planarizing the recesses of the conductive layers 112R, 112G, and 112B. Conductive layers 126R, 126G, and 126B, which are electrically connected to the conductive layers 112R, 112G, and 112B, are provided on the conductive layers 112R, 112G, and 112B and the layer 128. Therefore, the regions overlapping with the recesses of the conductive layers 112R, 112G, and 112B can also be used as light-emitting regions, thereby increasing the aperture ratio of the pixel.

[0360] The layer 128 may be an insulating layer or a conductive layer. Various inorganic insulating materials, organic insulating materials, and conductive materials can be used as appropriate for the layer 128. In particular, the layer 128 is preferably formed using an insulating material, and is particularly preferably formed using an organic insulating material.

[0361] An insulating layer containing an organic material can be suitably used as the layer 128. Examples of the organic material that can be used for the layer 128 include the organic materials that can be used for the protective layer 131.

[0362] A common electrode 115 is provided on the EL layer 113 of each light-emitting device. The common electrode 115 is a continuous film provided in common to a plurality of light-emitting devices.

[0363] A protective layer 131 is provided on the light-emitting devices 130R, 130G, and 130B. The protective layer 131 and the substrate 152 are bonded via an adhesive layer 142. The substrate 152 is provided with a light-shielding layer 117, color conversion layers 135R and 135G, and coloring layers 132R, 132G, and 132B. A solid sealing structure, a hollow sealing structure, or the like can be applied to seal the light-emitting devices. In FIG. 19A , the space between the substrates 152 and 151 is filled with the adhesive layer 142, thereby applying a solid sealing structure. Alternatively, the space may be filled with an inert gas (such as nitrogen or argon), thereby applying a hollow sealing structure. In this case, the adhesive layer 142 may be provided so as not to overlap the light-emitting devices. Alternatively, the space may be filled with a resin different from the frame-shaped adhesive layer 142.

[0364] The protective layer 131 is preferably provided in at least the display portion 162 and is provided so as to cover the entire display portion 162. The protective layer 131 is preferably provided so as to cover not only the display portion 162 but also the connection portion 140 and the circuit 164. The protective layer 131 is preferably provided up to the edge of the display device 100G. On the other hand, in the connection portion 204, the FPC 172 and the conductive layer 166 are electrically connected to each other, so that a portion where the protective layer 131 is not provided is generated.

[0365] A connection portion 204 is provided in a region of the substrate 151 where the substrate 152 does not overlap. In the connection portion 204, the wiring 165 is electrically connected to the FPC 172 via a conductive layer 166 and a connection layer 242. The conductive layer 166 has an example of a stacked structure including a conductive film obtained by processing the same conductive film as the conductive layers 112R, 112G, and 112B, a conductive film obtained by processing the same conductive film as the conductive layers 126R, 126G, and 126B, and a conductive film obtained by processing the same conductive film as the conductive layers 129R, 129G, and 129B. The conductive layer 166 is exposed on the top surface of the connection portion 204. This allows the connection portion 204 and the FPC 172 to be electrically connected via the connection layer 242.

[0366] For example, after the protective layer 131 is formed over the entire surface of the display device 100G, a mask is used to remove the region of the protective layer 131 that overlaps with the conductive layer 166, thereby exposing the conductive layer 166.

[0367] Alternatively, a laminated structure of at least one organic layer and a conductive layer may be provided on the conductive layer 166, and the protective layer 131 may be provided on the laminated structure. A peeling initiation point (a portion that triggers peeling) may then be formed on the laminated structure using a laser or a sharp blade (e.g., a needle or cutter), selectively removing the laminated structure and the protective layer 131 thereon to expose the conductive layer 166. For example, the protective layer 131 can be selectively removed by pressing an adhesive roller against the substrate 151 and moving the roller relative to the substrate while rotating. Alternatively, adhesive tape may be attached to the substrate 151 and peeled off. Because of poor adhesion between the organic layer and the conductive layer, or between the organic layers themselves, separation occurs at the interface between the organic layer and the conductive layer or within the organic layer. This allows selective removal of the region of the protective layer 131 that overlaps with the conductive layer 166. If an organic layer or the like remains on the conductive layer 166, it can be removed using an organic solvent or the like.

[0368] As the organic layer, for example, at least one organic layer (a layer functioning as a light-emitting layer, a carrier blocking layer, a carrier transport layer, or a carrier injection layer) used in the EL layer 113 can be used. The organic layer may be formed simultaneously with the formation of the EL layer 113, or may be provided separately. The conductive layer can be formed in the same process and with the same material as the common electrode 115. For example, it is preferable to form an ITO film as the common electrode 115 and the conductive layer. Note that when a stacked structure is used for the common electrode 115, at least one layer of the layers constituting the common electrode 115 is provided as the conductive layer.

[0369] Furthermore, the upper surface of the conductive layer 166 may be covered with a mask so that the protective layer 131 is not formed on the conductive layer 166. As the mask, for example, a metal mask (area metal mask) or an adhesive or adhesive tape or film may be used. By forming the protective layer 131 with the mask in place and then removing the mask, the conductive layer 166 can be kept exposed even after the protective layer 131 is formed.

[0370] By using such a method, a region where the protective layer 131 is not provided can be formed in the connection portion 204, and in this region, the conductive layer 166 and the FPC 172 can be electrically connected via the connection layer 242.

[0371] In the connection portion 140, a conductive layer 123 is provided on the insulating layer 214. The conductive layer 123 has a laminated structure including a conductive film obtained by processing the same conductive film as the conductive layers 112R, 112G, and 112B, a conductive film obtained by processing the same conductive film as the conductive layers 126R, 126G, and 126B, and a conductive film obtained by processing the same conductive film as the conductive layers 129R, 129G, and 129B. The side surfaces of the conductive layer 123 are covered with a sidewall insulating layer 114. The sidewall insulating layer 114 functions as a sidewall of the conductive layer 123. A common electrode 115 is provided on the conductive layer 123 in contact with the conductive layer 123. In other words, in the connection portion 140, the conductive layer 123 and the common electrode 115 are electrically connected.

[0372] The display device 100G is a top-emission type. Light emitted by the light-emitting device is emitted toward the substrate 152. The substrate 152 is preferably made of a material that is highly transparent to visible light. The pixel electrodes contain a material that reflects visible light, and the counter electrode (common electrode 115) contains a material that transmits visible light.

[0373] The stacked structure from the substrate 151 to the insulating layer 214 corresponds to the layer 101 including the transistor in Embodiment 1.

[0374] The transistor 201 and the transistor 205 are both formed over a substrate 151. These transistors can be manufactured using the same material and through the same process.

[0375] An insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are provided over the substrate 151 in this order. A part of the insulating layer 211 functions as a gate insulating layer for each transistor. A part of the insulating layer 213 functions as a gate insulating layer for each transistor. The insulating layer 215 is provided to cover the transistor. The insulating layer 214 is provided to cover the transistor and functions as a planarization layer. Note that the number of gate insulating layers and the number of insulating layers covering the transistors are not limited, and each may be a single layer or two or more layers.

[0376] At least one insulating layer covering the transistor is preferably made of a material that is resistant to the diffusion of impurities such as water and hydrogen. This allows the insulating layer to function as a barrier layer. With this structure, it is possible to effectively prevent impurities from diffusing into the transistor from the outside, thereby improving the reliability of the display device.

[0377] It is preferable to use an inorganic insulating film for each of the insulating layers 211, 213, and 215. Examples of the inorganic insulating film that can be used include a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, and an aluminum nitride film. Alternatively, a hafnium oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, and a neodymium oxide film may also be used. Two or more of the above insulating films may be stacked.

[0378] An organic insulating layer is suitable for the insulating layer 214, which functions as a planarizing layer. Materials that can be used for the organic insulating layer include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene-based resin, phenolic resin, and precursors of these resins. Alternatively, the insulating layer 214 may have a laminated structure of an organic insulating layer and an inorganic insulating layer. The outermost layer of the insulating layer 214 preferably functions as an etching protection layer. This prevents recesses from being formed in the insulating layer 214 during processing of the conductive layer 112R, conductive layer 126R, conductive layer 129R, or the like. Alternatively, recesses may be formed in the insulating layer 214 during processing of the conductive layer 112R, conductive layer 126R, conductive layer 129R, or the like.

[0379] The transistor 201 and the transistor 205 each include a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, conductive layers 222a and 222b that function as a source and a drain, a semiconductor layer 231, an insulating layer 213 that functions as a gate insulating layer, and a conductive layer 223 that functions as a gate. Here, the same hatching pattern is applied to multiple layers obtained by processing the same conductive film. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231.

[0380] The structure of the transistor included in the display device of this embodiment is not particularly limited. For example, a planar transistor, a staggered transistor, an inverted staggered transistor, or the like can be used. Furthermore, either a top-gate transistor or a bottom-gate transistor structure may be used. Alternatively, gates may be provided above and below a semiconductor layer in which a channel is formed.

[0381] The transistor 201 and the transistor 205 have a structure in which a semiconductor layer in which a channel is formed is sandwiched between two gates. The two gates may be connected and the same signal may be supplied to drive the transistor. Alternatively, the threshold voltage of the transistor may be controlled by applying a potential for controlling the threshold voltage to one of the two gates and a potential for driving to the other.

[0382] The crystallinity of a semiconductor material used in a transistor is not particularly limited, and any of an amorphous semiconductor, a single crystalline semiconductor, and a semiconductor having crystallinity other than single crystal (a microcrystalline semiconductor, a polycrystalline semiconductor, or a semiconductor having a crystalline region in part) may be used. The use of a single crystalline semiconductor or a crystalline semiconductor is preferable because it can suppress deterioration of transistor characteristics.

[0383] The semiconductor layer of the transistor preferably includes a metal oxide (also referred to as an oxide semiconductor). That is, the display device of this embodiment preferably includes a transistor using a metal oxide for a channel formation region (hereinafter referred to as an OS transistor).

[0384] Examples of crystalline oxide semiconductors include c-axis-aligned crystalline (CAAC)-OS, nanocrystalline (nc)-OS, and the like.

[0385] Alternatively, a transistor using silicon for a channel formation region (Si transistor) may be used. Examples of silicon include single crystal silicon, polycrystalline silicon, and amorphous silicon. In particular, a transistor having low temperature polysilicon (LTPS) in a semiconductor layer (hereinafter also referred to as an LTPS transistor) may be used. An LTPS transistor has high field-effect mobility and favorable frequency characteristics.

[0386] By using Si transistors such as LTPS transistors, circuits that need to be driven at high frequencies (such as source driver circuits) can be built on the same substrate as the display unit, which simplifies the external circuits mounted on the display device and reduces component and mounting costs.

[0387] An OS transistor has significantly higher field-effect mobility than a transistor using amorphous silicon. Furthermore, an OS transistor has significantly lower source-drain leakage current (also referred to as off-state current) in an off state and can hold charge accumulated in a capacitor connected in series with the transistor for a long period of time. Furthermore, the use of an OS transistor can reduce the power consumption of a display device.

[0388] Furthermore, to increase the emission luminance of a light-emitting device included in a pixel circuit, it is necessary to increase the amount of current flowing through the light-emitting device. To achieve this, it is necessary to increase the source-drain voltage of a driving transistor included in the pixel circuit. Since an OS transistor has a higher source-drain withstand voltage than a Si transistor, a high voltage can be applied between the source and drain of the OS transistor. Therefore, by using an OS transistor as the driving transistor included in a pixel circuit, it is possible to increase the amount of current flowing through the light-emitting device and increase the emission luminance of the light-emitting device.

[0389] Furthermore, when the transistor operates in the saturation region, the OS transistor can reduce the change in source-drain current with respect to a change in gate-source voltage compared to a Si transistor. Therefore, by using an OS transistor as a driving transistor included in a pixel circuit, the current flowing between the source and drain can be precisely controlled by changing the gate-source voltage, thereby controlling the amount of current flowing through the light-emitting device. This allows for a higher number of gray levels in the pixel circuit.

[0390] Furthermore, in terms of the saturation characteristics of the current that flows when a transistor operates in the saturation region, an OS transistor can pass a more stable current (saturation current) than a Si transistor, even when the source-drain voltage gradually increases. Therefore, by using an OS transistor as a driving transistor, a stable current can be passed through a light-emitting device, even when the current-voltage characteristics of an EL device vary. In other words, when an OS transistor operates in the saturation region, the source-drain current of the OS transistor remains almost unchanged even when the source-drain voltage increases, thereby stabilizing the light-emitting luminance of the light-emitting device.

[0391] As described above, by using an OS transistor for a driving transistor included in a pixel circuit, it is possible to achieve "suppression of black floating," "increase in light emission luminance," "multiple gradations," "suppression of variations in light-emitting devices," and the like.

[0392] The semiconductor layer preferably contains, for example, indium, M (wherein M is one or more elements selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc. In particular, M is preferably one or more elements selected from aluminum, gallium, yttrium, and tin.

[0393] In particular, it is preferable to use an oxide containing indium (In), gallium (Ga), and zinc (Zn) (also referred to as IGZO) as the semiconductor layer. Alternatively, it is preferable to use an oxide containing indium, tin, and zinc. Alternatively, it is preferable to use an oxide containing indium, gallium, tin, and zinc. Alternatively, it is preferable to use an oxide containing indium (In), aluminum (Al), and zinc (Zn) (also referred to as IAZO). Alternatively, it is preferable to use an oxide containing indium (In), aluminum (Al), gallium (Ga), and zinc (Zn) (also referred to as IAGZO).

[0394] When the semiconductor layer is an In-M-Zn oxide, the atomic ratio of In in the In-M-Zn oxide is preferably equal to or greater than the atomic ratio of M. The atomic ratio of metal elements in such an In-M-Zn oxide may be In:M:Zn=1:1:1 or a composition thereabout, In:M:Zn=1:1:1.2 or a composition thereabout, In:M:Zn=1:3:2 or a composition thereabout, In:M:Zn=1:3:4 or a composition thereabout, In:M:Zn=2:1:3 or a composition thereabout, In:M:Zn=3:1:2 or a composition thereabout, or In:M:Zn=4:2:3. or a composition in the vicinity thereof, In:M:Zn = 4:2:4.1 or a composition in the vicinity thereof, In:M:Zn = 5:1:3 or a composition in the vicinity thereof, In:M:Zn = 5:1:6 or a composition in the vicinity thereof, In:M:Zn = 5:1:7 or a composition in the vicinity thereof, In:M:Zn = 5:1:8 or a composition in the vicinity thereof, In:M:Zn = 6:1:6 or a composition in the vicinity thereof, In:M:Zn = 5:2:5 or a composition in the vicinity thereof, etc. Note that a composition in the vicinity thereof includes a range of ±30% of the desired atomic ratio.

[0395] For example, when describing a composition having an atomic ratio of In:Ga:Zn=4:2:3 or thereabout, this includes a case where, when In is taken as 4, Ga is 1 to 3 and Zn is 2 to 4. Furthermore, when describing a composition having an atomic ratio of In:Ga:Zn=5:1:6 or thereabout, this includes a case where, when In is taken as 5, Ga is more than 0.1 and 2 or less and Zn is 5 to 7. Furthermore, when describing a composition having an atomic ratio of In:Ga:Zn=1:1:1 or thereabout, this includes a case where, when In is taken as 1, Ga is more than 0.1 and 2 or less and Zn is more than 0.1 and 2 or less.

[0396] The transistors included in the circuit 164 may have the same structure as or different from the transistors included in the display portion 162. The transistors included in the circuit 164 may all have the same structure or may have two or more types. Similarly, the transistors included in the display portion 162 may all have the same structure or may have two or more types.

[0397] All the transistors included in the display portion 162 may be OS transistors, all the transistors included in the display portion 162 may be Si transistors, or some of the transistors included in the display portion 162 may be OS transistors and the rest may be Si transistors.

[0398] For example, by using both an LTPS transistor and an OS transistor in the display portion 162, a display device with low power consumption and high driving capability can be realized. A structure in which an LTPS transistor and an OS transistor are combined is sometimes referred to as LTPO. Note that a more preferable example is a structure in which an OS transistor is used as a transistor that functions as a switch for controlling conduction / non-conduction between wirings, and an LTPS transistor is used as a transistor for controlling current.

[0399] For example, one of the transistors included in the display portion 162 functions as a transistor for controlling a current flowing through a light-emitting device and can also be called a driving transistor. One of the source and drain of the driving transistor is electrically connected to a pixel electrode of the light-emitting device. It is preferable to use an LTPS transistor as the driving transistor. This allows a large current to flow through the light-emitting device in the pixel circuit.

[0400] On the other hand, another transistor included in the display portion 162 functions as a switch for controlling pixel selection / non-selection and can also be called a selection transistor. The gate of the selection transistor is electrically connected to a gate line, and one of the source and drain is electrically connected to a source line (signal line). An OS transistor is preferably used as the selection transistor. This allows the gradation of a pixel to be maintained even when the frame frequency is significantly reduced (for example, 1 fps or less). Therefore, power consumption can be reduced by stopping the driver when displaying a still image.

[0401] As described above, the display device of one embodiment of the present invention can have a high aperture ratio, high definition, high display quality, and low power consumption.

[0402] A display device according to one embodiment of the present invention includes an OS transistor and a light-emitting device with a metal maskless (MML) structure. This structure significantly reduces leakage current that may flow through the transistor and leakage current that may flow between adjacent light-emitting devices (also referred to as lateral leakage current or side leakage current). Furthermore, when an image is displayed on the display device, the viewer can observe one or more of image clarity, image sharpness, high saturation, and a high contrast ratio. The extremely low leakage current that may flow through the transistor and lateral leakage current between the light-emitting devices significantly reduces light leakage during black display (so-called floating black).

[0403] 19B and 19C show other examples of transistor configurations.

[0404] The transistor 209 and the transistor 210 each include a conductive layer 221 functioning as a gate, an insulating layer 211 functioning as a gate insulating layer, a semiconductor layer 231 including a channel formation region 231i and a pair of low-resistance regions 231n, a conductive layer 222a connected to one of the pair of low-resistance regions 231n, a conductive layer 222b connected to the other of the pair of low-resistance regions 231n, an insulating layer 225 functioning as a gate insulating layer, a conductive layer 223 functioning as a gate, and an insulating layer 215 covering the conductive layer 223. The insulating layer 211 is located between the conductive layer 221 and the channel formation region 231i. The insulating layer 225 is located at least between the conductive layer 223 and the channel formation region 231i. Furthermore, an insulating layer 218 covering the transistor may be provided.

[0405] 19B shows an example in which the insulating layer 225 covers the top surface and side surfaces of the semiconductor layer 231. The conductive layer 222a and the conductive layer 222b are connected to the low-resistance region 231n through openings provided in the insulating layer 225 and the insulating layer 215, respectively. One of the conductive layer 222a and the conductive layer 222b functions as a source, and the other functions as a drain.

[0406] 19C , the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231 but does not overlap with the low-resistance region 231n. For example, the insulating layer 225 is processed using the conductive layer 223 as a mask, thereby manufacturing the structure shown in FIG. 19C . In FIG. 19C , the insulating layer 215 is provided to cover the insulating layer 225 and the conductive layer 223, and the conductive layer 222a and the conductive layer 222b are connected to the low-resistance region 231n through openings in the insulating layer 215.

[0407] It is preferable to provide a light-shielding layer 117 on the surface of the substrate 152 facing the substrate 151. The light-shielding layer 117 can be provided between adjacent light-emitting devices, on the connection section 140, and on the circuit 164. Various optical members can be disposed on the outside of the substrate 152.

[0408] The materials that can be used for the substrate 120 can be used for the substrate 151 and the substrate 152 .

[0409] The adhesive layer 142 can be made of a material that can be used for the resin layer 122 .

[0410] The connection layer 242 may be an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), or the like.

[0411] [Display Device 100H] The display device 100H shown in FIG. 20A differs from the display device 100G mainly in that it is a bottom-emission display device.

[0412] Light emitted from the light-emitting device is emitted toward the substrate 151. A material that is highly transparent to visible light is preferably used for the substrate 151. On the other hand, the light-transmitting property of the material used for the substrate 152 does not matter.

[0413] It is preferable to form a light-shielding layer 117 between the substrate 151 and the transistor 201 and between the substrate 151 and the transistor 205. Fig. 20A shows an example in which the light-shielding layer 117 is provided on the substrate 151, the insulating layer 153 is provided on the light-shielding layer 117, and the transistors 201, 205, etc. are provided on the insulating layer 153. In addition, a coloring layer 132R and a coloring layer 132G are provided on the insulating layer 215. A color conversion layer 135R is provided on the coloring layer 132R, and a color conversion layer 135G is provided on the coloring layer 132G.

[0414] Light emitting device 130R includes conductive layer 112R and conductive layer 126R on conductive layer 112R.

[0415] Light emitting device 130G includes conductive layer 112G and conductive layer 126G on conductive layer 112G.

[0416] The conductive layers 112R, 112G, 126R, and 126G are preferably made of a material that is highly transparent to visible light, and the common electrode 115 is preferably made of a material that reflects visible light.

[0417] 19A and 20A show examples in which the top surface of the layer 128 has a flat portion, but there are no particular limitations on the shape of the layer 128. Modified examples of the layer 128 are shown in Figures 20B to 20D.

[0418] As shown in FIGS. 20B and 20D, the upper surface of layer 128 can be configured to have a recessed shape in the center and its vicinity in cross section, that is, a shape having a concave curved surface.

[0419] As shown in FIG. 20C, the upper surface of layer 128 may have a shape in which the center and its vicinity bulge in cross section, that is, a shape having a convex curve.

[0420] The upper surface of layer 128 may have one or both of a convex curved surface and a concave curved surface. The number of convex curved surfaces and the number of concave curved surfaces that the upper surface of layer 128 has are not limited, and may be one or more.

[0421] Furthermore, the height of the upper surface of layer 128 and the height of the upper surface of conductive layer 112R may be the same or approximately the same, or may be different from each other. For example, the height of the upper surface of layer 128 may be lower or higher than the height of the upper surface of conductive layer 112R.

[0422] 20B can also be considered an example in which layer 128 is contained within the recess of conductive layer 112R. On the other hand, as shown in Fig. 20D, layer 128 may be present outside the recess of conductive layer 112R, that is, the width of the top surface of layer 128 may be wider than the recess.

[0423] This embodiment mode can be combined with other embodiment modes as appropriate.

[0424] Embodiment 5 In this embodiment, a light-emitting device that can be used for a display device according to one embodiment of the present invention will be described.

[0425] 21A, the light-emitting device has an EL layer 763 between a pair of electrodes (a lower electrode 761 and an upper electrode 762). The EL layer 763 can be composed of multiple layers, such as a layer 780, a light-emitting layer 771, and a layer 790.

[0426] The light-emitting layer 771 contains at least a light-emitting substance (also referred to as a light-emitting material).

[0427] When the lower electrode 761 is an anode and the upper electrode 762 is a cathode, the layer 780 includes one or more of a layer containing a substance with high hole-injecting properties (hole-injecting layer), a layer containing a substance with high hole-transporting properties (hole-transporting layer), and a layer containing a substance with high electron-blocking properties (electron-blocking layer). The layer 790 also includes one or more of a layer containing a substance with high electron-injecting properties (electron-injecting layer), a layer containing a substance with high electron-transporting properties (electron-transporting layer), and a layer containing a substance with high hole-blocking properties (hole-blocking layer). When the lower electrode 761 is a cathode and the upper electrode 762 is an anode, the layers 780 and 790 have the opposite structures to those described above.

[0428] A structure including the layer 780, the light-emitting layer 771, and the layer 790 provided between a pair of electrodes can function as a single light-emitting unit, and the structure of FIG. 21A is referred to as a single structure in this specification.

[0429] 21B shows a modified example of the EL layer 763 included in the light-emitting device shown in Fig. 21A. Specifically, the light-emitting device shown in Fig. 21B includes a layer 781 on a lower electrode 761, a layer 782 on the layer 781, a light-emitting layer 771 on the layer 782, a layer 791 on the light-emitting layer 771, a layer 792 on the layer 791, and an upper electrode 762 on the layer 792.

[0430] When the lower electrode 761 is an anode and the upper electrode 762 is a cathode, for example, the layer 781 can be a hole injection layer, the layer 782 can be a hole transport layer, the layer 791 can be an electron transport layer, and the layer 792 can be an electron injection layer. When the lower electrode 761 is a cathode and the upper electrode 762 is an anode, the layer 781 can be an electron injection layer, the layer 782 can be an electron transport layer, the layer 791 can be a hole transport layer, and the layer 792 can be a hole injection layer. Such a layer structure allows carriers to be efficiently injected into the light-emitting layer 771, and the efficiency of carrier recombination in the light-emitting layer 771 can be increased.

[0431] 21C and 21D, a variation of the single structure is a configuration in which multiple light-emitting layers (light-emitting layers 771, 772, and 773) are provided between layer 780 and layer 790. While FIGS. 21C and 21D show an example having three light-emitting layers, the light-emitting layer in a single-structure light-emitting device may have two layers, or four or more layers. Furthermore, a light-emitting device with a single structure may have a buffer layer between the two light-emitting layers. The buffer layer can be formed using, for example, a material that can be used for a hole transport layer or an electron transport layer.

[0432] 21E and 21F, a configuration in which a plurality of light-emitting units (light-emitting unit 763a and light-emitting unit 763b) are connected in series via a charge generation layer 785 (also referred to as an intermediate layer) is referred to as a tandem structure in this specification. Note that the tandem structure may also be referred to as a stack structure. By using a tandem structure, a light-emitting device capable of emitting high-luminance light can be obtained. Furthermore, compared to a single structure, the tandem structure can reduce the current required to obtain the same luminance, thereby improving reliability.

[0433] 21D and 21F are examples of display devices having a layer 764 overlapping with the light-emitting device. Fig. 21D is an example in which the layer 764 overlaps with the light-emitting device shown in Fig. 21C, and Fig. 21F is an example in which the layer 764 overlaps with the light-emitting device shown in Fig. 21E. In Fig. 21D and Fig. 21F, a conductive film that transmits visible light is used for the upper electrode 762 in order to extract light to the upper electrode 762 side.

[0434] The layer 764 can be a color conversion layer, a color filter (coloring layer), or both.

[0435] 21C and 21D , the light-emitting layers 771, 772, and 773 may be made of light-emitting materials that emit light of the same color, or even the same light-emitting material. For example, the light-emitting layers 771, 772, and 773 may be made of a light-emitting material that emits blue light. In the subpixel that emits blue light, blue light emitted by the light-emitting device can be extracted. In the subpixel that emits red light and the subpixel that emits green light, a color conversion layer can be provided as the layer 764 shown in FIG. 21D to convert the blue light emitted by the light-emitting device into light of a longer wavelength, thereby extracting red or green light. It is preferable to use both a color conversion layer and a colored layer as the layer 764. A portion of the light emitted by the light-emitting device may be transmitted directly without being converted by the color conversion layer. By extracting the light that has passed through the color conversion layer through the colored layer, light other than the desired color can be absorbed by the colored layer, thereby improving the color purity of the light emitted by the subpixel.

[0436] 21C and 21D , light-emitting layers 771, 772, and 773 may each contain light-emitting materials that emit light of a different color. When the lights emitted by light-emitting layers 771, 772, and 773 are complementary in color, white light can be obtained. For example, a light-emitting device with a single structure preferably includes a light-emitting layer containing a light-emitting material that emits blue light and a light-emitting layer containing a light-emitting material that emits visible light with a wavelength longer than blue.

[0437] A color filter may be provided as layer 764 shown in Figure 21D. When white light passes through the color filter, light of a desired color can be obtained.

[0438] For example, when a light-emitting device with a single structure has three light-emitting layers, it preferably has a light-emitting layer containing a light-emitting material that emits red (R) light, a light-emitting layer containing a light-emitting material that emits green (G) light, and a light-emitting layer containing a light-emitting material that emits blue (B) light. The stacking order of the light-emitting layers may be R, G, B from the anode side, or R, B, G from the anode side, etc. In this case, a buffer layer may be provided between R and G or B.

[0439] Furthermore, for example, when a light-emitting device with a single structure has two light-emitting layers, a structure having one light-emitting layer containing a light-emitting substance that emits blue (B) light and another light-emitting layer containing a light-emitting substance that emits yellow (Y) light is preferred. This structure is sometimes referred to as a BY single structure.

[0440] A light-emitting device that emits white light preferably contains two or more types of light-emitting materials. To obtain white light emission, light-emitting materials are selected such that the emissions of the two light-emitting materials have a complementary color relationship, or light-emitting materials are selected such that the combined emissions of the two or more light-emitting materials produce white light. For example, when white light emission is obtained using two light-emitting layers, light-emitting materials are selected such that the emission colors of the two light-emitting layers have a complementary color relationship. For example, a light-emitting device that emits white light as a whole can be obtained by making the emission color of the first light-emitting layer and the emission color of the second light-emitting layer complementary to each other. Furthermore, when white light emission is obtained using three or more light-emitting layers, the emission colors of the three or more light-emitting layers are combined to produce white light as a whole.

[0441] 21C and 21D, the layer 780 and the layer 790 may each independently have a laminated structure made up of two or more layers, as shown in FIG. 21B.

[0442] 21E and 21F , the light-emitting layer 771 and the light-emitting layer 772 may be made of a light-emitting material that emits light of the same color, or even the same light-emitting material. For example, in a light-emitting device having subpixels that emit light of different colors, the light-emitting layer 771 and the light-emitting layer 772 may each be made of a light-emitting material that emits blue light. In the subpixel that emits blue light, the blue light emitted by the light-emitting device can be extracted. In the subpixel that emits red light and the subpixel that emits green light, a color conversion layer can be provided as the layer 764 shown in FIG. 21F to convert the blue light emitted by the light-emitting device into light with a longer wavelength, thereby allowing red or green light to be extracted. Furthermore, it is preferable to use both a color conversion layer and a colored layer as the layer 764.

[0443] 21E and 21F, the light-emitting layer 771 and the light-emitting layer 772 may be made of light-emitting materials that emit light of different colors. When the light emitted by the light-emitting layer 771 and the light emitted by the light-emitting layer 772 are complementary colors, white light can be obtained. A color filter may be provided as the layer 764 shown in FIG. 21F. When white light passes through the color filter, light of a desired color can be obtained.

[0444] 21E and 21F show an example in which the light-emitting unit 763a has one light-emitting layer 771 and the light-emitting unit 763b has one light-emitting layer 772, but this is not limiting. Each of the light-emitting unit 763a and the light-emitting unit 763b may have two or more light-emitting layers.

[0445] 21E and 21F illustrate light-emitting devices having two light-emitting units, but the present invention is not limited to this. The light-emitting device may have three or more light-emitting units. Note that a configuration having two light-emitting units may be referred to as a two-tiered tandem structure, and a configuration having three light-emitting units may be referred to as a three-tiered tandem structure.

[0446] 21E and 21F, the light-emitting unit 763a includes a layer 780a, a light-emitting layer 771, and a layer 790a, and the light-emitting unit 763b includes a layer 780b, a light-emitting layer 772, and a layer 790b.

[0447] When the lower electrode 761 is an anode and the upper electrode 762 is a cathode, the layers 780a and 780b each have one or more of a hole injection layer, a hole transport layer, and an electron blocking layer. The layers 790a and 790b each have one or more of an electron injection layer, an electron transport layer, and a hole blocking layer. When the lower electrode 761 is a cathode and the upper electrode 762 is an anode, the layers 780a and 790a have the opposite structures to those described above, and the layers 780b and 790b also have the opposite structures to those described above.

[0448] When the lower electrode 761 is an anode and the upper electrode 762 is a cathode, for example, the layer 780a may have a hole injection layer, a hole transport layer on the hole injection layer, and an electron blocking layer on the hole transport layer. The layer 790a may have an electron transport layer and a hole blocking layer between the light-emitting layer 771 and the electron transport layer. The layer 780b may have a hole transport layer and an electron blocking layer on the hole transport layer. The layer 790b may have an electron transport layer, an electron injection layer on the electron transport layer, and a hole blocking layer between the light-emitting layer 772 and the electron transport layer. When the lower electrode 761 is a cathode and the upper electrode 762 is an anode, for example, the layer 780a may have an electron injection layer, an electron transport layer on the electron injection layer, and an electron blocking layer on the electron transport layer. Layer 790a has a hole transport layer and may further have an electron blocking layer between light-emitting layer 771 and the hole transport layer. Layer 780b has an electron transport layer and may further have a hole blocking layer on the electron transport layer. Layer 790b has a hole transport layer and a hole injection layer on the hole transport layer and may further have an electron blocking layer between light-emitting layer 772 and the hole transport layer.

[0449] When a light-emitting device having a tandem structure is fabricated, two light-emitting units are stacked via a charge generation layer 785. The charge generation layer 785 has at least a charge generation region. The charge generation layer 785 has a function of injecting electrons into one of the two light-emitting units and injecting holes into the other when a voltage is applied between a pair of electrodes.

[0450] An example of a light emitting device with a tandem structure is shown in FIGS. 22A to 22C.

[0451] 22A shows a configuration having three light-emitting units. In FIG. 22A , a plurality of light-emitting units (light-emitting unit 763a, light-emitting unit 763b, and light-emitting unit 763c) are connected in series via charge generation layers 785. Furthermore, light-emitting unit 763a includes layer 780a, light-emitting layer 771, and layer 790a. Light-emitting unit 763b includes layer 780b, light-emitting layer 772, and layer 790b. Light-emitting unit 763c includes layer 780c, light-emitting layer 773, and layer 790c. Note that layer 780c can have a structure applicable to layers 780a and 780b, and layer 790c can have a structure applicable to layers 790a and 790b.

[0452] 22A , the light-emitting layer 771, the light-emitting layer 772, and the light-emitting layer 773 can have light-emitting materials that emit light of the same color. Specifically, the light-emitting layer 771, the light-emitting layer 772, and the light-emitting layer 773 can all have a structure containing a blue (B) light-emitting material (a so-called B\B\B three-stage tandem structure). Note that "a\b" means that a light-emitting unit having a light-emitting material that emits light of b is provided on a light-emitting unit having a light-emitting material that emits light of a, via a charge-generating layer, and a and b represent colors.

[0453] 22A , light-emitting materials emitting light of different colors can be used for some or all of the light-emitting layers 771, 772, and 773. Examples of combinations of the light-emitting colors of the light-emitting layers 771, 772, and 773 include a configuration in which two of them are blue (B) and the remaining one is yellow (Y), and a configuration in which one of them is red (R), the other one is green (G), and the remaining one is blue (B).

[0454] 22B shows a tandem light-emitting device in which light-emitting units each having a plurality of light-emitting layers are stacked. In FIG. 22B, two light-emitting units (light-emitting unit 763a and light-emitting unit 763b) are connected in series via a charge generation layer 785. Light-emitting unit 763a includes layer 780a, light-emitting layers 771a, 771b, and 771c, and layer 790a. Light-emitting unit 763b includes layer 780b, light-emitting layers 772a, 772b, and 772c, and layer 790b.

[0455] In FIG. 22B , light-emitting materials having complementary colors are selected for the light-emitting layers 771a, 771b, and 771c, and the light-emitting unit 763a is configured to emit white light (W). Light-emitting materials having complementary colors are also selected for the light-emitting layers 772a, 772b, and 772c, and the light-emitting unit 763b is configured to emit white light (W). In other words, the structure shown in FIG. 22B can be said to have a W\W two-tier tandem structure. Note that there is no particular limitation on the stacking order of the light-emitting materials having complementary colors. The implementer can select the optimal stacking order as appropriate. Although not shown, a W\W\W three-tier tandem structure or a four-tier or more tandem structure may also be used.

[0456] In addition, when a light-emitting device with a tandem structure is used, there are a B\Y or Y\B two-stage tandem structure having a light-emitting unit that emits yellow (Y) light and a light-emitting unit that emits blue (B) light, a R.G\B or B\R.G two-stage tandem structure having a light-emitting unit that emits red (R) and green (G) light and a light-emitting unit that emits blue (B) light, a light-emitting unit that emits yellow (Y) light and a light-emitting unit that emits blue (B) light, and a light-emitting unit that emits blue (B) light. Examples of such a tandem structure include a B\Y\B three-stage tandem structure having, in this order, a light-emitting unit that emits blue (B) light, a light-emitting unit that emits yellow-green (YG) light, and a light-emitting unit that emits blue (B) light, and a B\G\B three-stage tandem structure having, in this order, a light-emitting unit that emits blue (B) light, a light-emitting unit that emits green (G) light, and a light-emitting unit that emits blue (B) light. Note that "a·b" means that one light-emitting unit has a light-emitting substance that emits light of a and a light-emitting substance that emits light of b.

[0457] Furthermore, as shown in FIG. 22C, a light-emitting unit having one light-emitting layer and a light-emitting unit having multiple light-emitting layers may be combined.

[0458] 22C , a plurality of light-emitting units (light-emitting unit 763a, light-emitting unit 763b, and light-emitting unit 763c) are connected in series via charge generation layers 785. Light-emitting unit 763a includes a layer 780a, a light-emitting layer 771, and a layer 790a. Light-emitting unit 763b includes a layer 780b, a light-emitting layer 772a, a light-emitting layer 772b, a light-emitting layer 772c, and a layer 790b. Light-emitting unit 763c includes a layer 780c, a light-emitting layer 773, and a layer 790c.

[0459] For example, in the configuration shown in Figure 22C, a three-stage tandem structure of B\R·G·YG\B can be applied, in which light-emitting unit 763a is a light-emitting unit that emits blue (B) light, light-emitting unit 763b is a light-emitting unit that emits red (R), green (G), and yellow-green (YG) light, and light-emitting unit 763c is a light-emitting unit that emits blue (B) light.

[0460] For example, the number of layers of the light-emitting units and the order of the colors can be, from the anode side, a two-layer structure of B and Y, a two-layer structure of B and light-emitting unit X, a three-layer structure of B, Y, and B, and the number of layers of the light-emitting layers in light-emitting unit X and the order of the colors can be, from the anode side, a two-layer structure of R and Y, a two-layer structure of R and G, a two-layer structure of G and R, a three-layer structure of G, R, and G, or a three-layer structure of R, G, and R. Furthermore, another layer can be provided between the two light-emitting layers.

[0461] Next, materials that can be used in light-emitting devices will be described.

[0462] Of the lower electrode 761 and the upper electrode 762, a conductive film that transmits visible light is used for the electrode from which light is extracted. A conductive film that reflects visible light is preferably used for the electrode from which light is not extracted. When the display device has a light-emitting device that emits infrared light, a conductive film that transmits visible light and infrared light is preferably used for the electrode from which light is extracted, and a conductive film that reflects visible light and infrared light is preferably used for the electrode from which light is not extracted.

[0463] A conductive film that transmits visible light may also be used for the electrode on the side from which light is not extracted. In this case, the electrode is preferably disposed between the reflective layer and the EL layer 763. That is, light emitted from the EL layer 763 may be reflected by the reflective layer and extracted from the display device.

[0464] Materials for forming the pair of electrodes of a light-emitting device can include metals, alloys, electrically conductive compounds, and mixtures thereof. Specific examples of such materials include metals such as aluminum, titanium, chromium, manganese, iron, cobalt, nickel, copper, gallium, zinc, indium, tin, molybdenum, tantalum, tungsten, palladium, gold, platinum, silver, yttrium, and neodymium, as well as alloys containing these metals in combination. Examples of such materials include indium tin oxide (In-Sn oxide, also referred to as ITO), In-Si-Sn oxide (also referred to as ITSO), indium zinc oxide (In-Zn oxide), and In-W-Zn oxide. Examples of such materials include aluminum alloys, such as aluminum-nickel-lanthanum alloys (Al-Ni-La), and silver-magnesium alloys and silver-palladium-copper alloys (Ag-Pd-Cu, also referred to as APC). Other examples of the material include elements belonging to Group 1 or 2 of the periodic table (e.g., lithium, cesium, calcium, and strontium) that are not listed above as examples, rare earth metals such as europium and ytterbium, alloys containing appropriate combinations of these, and graphene.

[0465] The light-emitting device preferably has a micro-optical resonator (microcavity) structure. Therefore, one of a pair of electrodes of the light-emitting device preferably has a transmissive and reflective electrode for visible light, and the other preferably has a reflective electrode for visible light. By having the light-emitting device have a microcavity structure, the light emitted from the light-emitting layer can be resonated between the two electrodes, thereby intensifying the light emitted from the light-emitting device.

[0466] The semi-transmitting / semi-reflective electrode can have a stacked structure of a conductive layer that can be used as a reflective electrode and a conductive layer that can be used as an electrode that is transparent to visible light (also referred to as a transparent electrode).

[0467] The light transmittance of the transparent electrode is 40% or more. For example, it is preferable to use an electrode having a visible light (light with a wavelength of 400 nm or more and less than 750 nm) transmittance of 40% or more for the transparent electrode of a light-emitting device. The visible light reflectance of the semi-transmissive / semi-reflective electrode is 10% or more and 95% or less, preferably 30% or more and 80% or less. The visible light reflectance of the reflective electrode is 40% or more and 100% or less, preferably 70% or more and 100% or less. The resistivity of these electrodes is 1×10 −２ Preferably, it is Ωcm or less.

[0468] The light-emitting device has at least a light-emitting layer. The light-emitting device may further include a layer containing a substance with high hole-injection properties, a substance with high hole-transport properties, a hole-blocking material, a substance with high electron-transport properties, an electron-blocking material, a substance with high electron-injection properties, or a bipolar substance (a substance with high electron-transport and hole-transport properties, also referred to as a bipolar material), as a layer other than the light-emitting layer. For example, the light-emitting device may have a structure including, in addition to the light-emitting layer, one or more layers selected from a hole-injection layer, a hole-transport layer, a hole-blocking layer, a charge-generating layer, an electron-blocking layer, an electron-transport layer, and an electron-injection layer.

[0469] The light-emitting device can be made of either a low-molecular-weight compound or a high-molecular-weight compound, and may contain an inorganic compound. The layers constituting the light-emitting device can be formed by a method such as vapor deposition (including vacuum vapor deposition), transfer, printing, inkjet printing, or coating.

[0470] The light-emitting layer contains one or more light-emitting materials. As the light-emitting material, a material that emits light of blue, purple, blue-purple, green, yellow-green, yellow, orange, red, or the like is appropriately used. Furthermore, a material that emits near-infrared light can also be used as the light-emitting material.

[0471] The light-emitting material may include a fluorescent material, a phosphorescent material, a TADF material, and a quantum dot material.

[0472] Examples of fluorescent materials include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives.

[0473] Examples of phosphorescent materials include organometallic complexes (particularly iridium complexes) having a 4H-triazole skeleton, a 1H-triazole skeleton, an imidazole skeleton, a pyrimidine skeleton, a pyrazine skeleton, or a pyridine skeleton; organometallic complexes (particularly iridium complexes) having a phenylpyridine derivative having an electron-withdrawing group as a ligand; platinum complexes; and rare earth metal complexes.

[0474] The light-emitting layer may contain one or more organic compounds (host material, assist material, etc.) in addition to the light-emitting substance (guest material). As the one or more organic compounds, one or both of a substance with high hole-transporting properties (hole-transporting material) and a substance with high electron-transporting properties (electron-transporting material) can be used. As the hole-transporting material, a substance with high hole-transporting properties that can be used in a hole-transporting layer, which will be described later, can be used. As the electron-transporting material, a substance with high electron-transporting properties that can be used in an electron-transporting layer, which will be described later, can be used. Furthermore, as the one or more organic compounds, a bipolar material or a TADF material may be used.

[0475] The light-emitting layer preferably includes, for example, a phosphorescent material and a hole-transporting material and an electron-transporting material that are a combination that easily forms an exciplex. This configuration allows for efficient emission using Exciplex-Triple Energy Transfer (ExTET), which is energy transfer from the exciplex to the light-emitting material (phosphorescent material). By selecting a combination that forms an exciplex that emits light that overlaps with the wavelength of the lowest-energy absorption band of the light-emitting material, energy transfer becomes smooth, allowing for efficient emission. This configuration simultaneously enables high efficiency, low-voltage operation, and long life of the light-emitting device.

[0476] The hole injection layer is a layer that injects holes from the anode into the hole transport layer and contains a substance with high hole injection properties, such as an aromatic amine compound and a composite material containing a hole transport material and an acceptor material (electron acceptor material).

[0477] As the hole transporting material, a substance with high hole transporting properties that can be used for a hole transporting layer, which will be described later, can be used.

[0478] Examples of the acceptor material include oxides of metals belonging to Groups 4 to 8 of the periodic table. Specific examples include molybdenum oxide, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, tungsten oxide, manganese oxide, and rhenium oxide. Among these, molybdenum oxide is particularly preferred because it is stable in the atmosphere, has low hygroscopicity, and is easy to handle. Alternatively, organic acceptor materials containing fluorine can be used. Other organic acceptor materials that can be used include quinodimethane derivatives, chloranil derivatives, and hexaazatriphenylene derivatives.

[0479] For example, as a substance with high hole-injection properties, a material containing a hole-transporting material and an oxide of a metal belonging to Groups 4 to 8 in the periodic table (typically, molybdenum oxide) may be used.

[0480] The hole transport layer is a layer that transports holes injected from the anode by the hole injection layer to the light emitting layer. The hole transport layer is a layer that contains a hole transporting material. The hole transporting material is a material having a concentration of 1×10 −６ cm ２ A substance having a hole mobility of 1 / Vs or more is preferred. Note that other substances can also be used as long as they have a higher hole transporting property than electron transporting property. As the hole transporting material, a substance having a high hole transporting property, such as a π-electron-rich heteroaromatic compound (e.g., a carbazole derivative, a thiophene derivative, a furan derivative, etc.) or an aromatic amine (a compound having an aromatic amine skeleton), is preferred.

[0481] The electron blocking layer is provided in contact with the light-emitting layer. The electron blocking layer is a layer containing a material that has hole transport properties and can block electrons. The electron blocking layer can be made of a material that has electron blocking properties among the hole transport materials described above.

[0482] The electron blocking layer has hole transport properties and can therefore also be called a hole transport layer. Furthermore, a layer of the hole transport layer that has electron blocking properties can also be called an electron blocking layer.

[0483] The electron transport layer is a layer that transports electrons injected from the cathode by the electron injection layer to the light emitting layer. The electron transport layer is a layer that contains an electron transporting material. The electron transporting material is a material having a concentration of 1×10 −６ cm ２ / Vs or more is preferred. Note that other substances can also be used as long as they have a higher electron transporting property than holes. Examples of electron-transporting materials that can be used include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, and metal complexes having a thiazole skeleton, as well as oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives having a quinoline ligand, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and other π-electron-deficient heteroaromatic compounds including nitrogen-containing heteroaromatic compounds.

[0484] The hole-blocking layer is provided in contact with the light-emitting layer. The hole-blocking layer is a layer containing a material that has electron transport properties and can block holes. The hole-blocking layer can be made of a material that has hole-blocking properties and is selected from the above electron-transporting materials.

[0485] The hole blocking layer has electron transport properties and can therefore also be called an electron transport layer. Furthermore, a layer of the electron transport layer that has hole blocking properties can also be called a hole blocking layer.

[0486] The electron injection layer is a layer that injects electrons from the cathode to the electron transport layer and contains a substance with high electron injection properties. Examples of the substance with high electron injection properties include alkali metals, alkaline earth metals, and compounds thereof. Examples of the substance with high electron injection properties include a composite material containing an electron transport material and a donor material (electron donor material).

[0487] Furthermore, it is preferable that the LUMO level of the material with high electron injection properties has a small difference from the work function value of the material used for the cathode (specifically, 0.5 eV or less).

[0488] The electron injection layer may contain, for example, lithium, cesium, ytterbium, lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF ｘ , x is an arbitrary number), 8-(quinolinolato)lithium (abbreviation: Liq), 2-(2-pyridyl)phenolatolithium (abbreviation: LiPP), 2-(2-pyridyl)-3-pyridinolatolithium (abbreviation: LiPPy), 4-phenyl-2-(2-pyridyl)phenolatolithium (abbreviation: LiPPP), lithium oxide (LiO ｘ ), alkali metals such as cesium carbonate, alkaline earth metals, or compounds thereof can be used. The electron injection layer may have a stacked structure of two or more layers. For example, the stacked structure may have a structure in which lithium fluoride is used as the first layer and ytterbium is provided as the second layer.

[0489] The electron injection layer may contain an electron transporting material. For example, a compound having an unshared electron pair and an electron-deficient heteroaromatic ring can be used as the electron transporting material. Specifically, a compound having at least one of a pyridine ring, a diazine ring (pyrimidine ring, pyrazine ring, pyridazine ring), and a triazine ring can be used.

[0490] The lowest unoccupied molecular orbital (LUMO) level of an organic compound having an unshared electron pair is preferably −3.6 eV or more and −2.3 eV or less. Generally, the highest occupied molecular orbital (HOMO) level and the LUMO level of an organic compound can be estimated by CV (cyclic voltammetry), photoelectron spectroscopy, optical absorption spectroscopy, inverse photoelectron spectroscopy, or the like.

[0491] For example, 4,7-diphenyl-1,10-phenanthroline (abbreviation: BPhen), 2,9-di(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBPhen), diquinoxalino[2,3-a:2',3'-c]phenazine (abbreviation: HATNA), 2,4,6-tris[3'-(pyridin-3-yl)biphenyl-3-yl]-1,3,5-triazine (abbreviation: TmPPPyTz), etc. can be used as the organic compound having an unshared electron pair. Note that NBPhen has a higher glass transition point (Tg) and is superior in heat resistance compared to BPhen.

[0492] As described above, the charge generation layer has at least a charge generation region. The charge generation region preferably contains an acceptor material, for example, a hole transport material and an acceptor material applicable to the hole injection layer.

[0493] The charge generation layer preferably includes a layer containing a substance with high electron injection properties. This layer may also be called an electron injection buffer layer. The electron injection buffer layer is preferably provided between the charge generation region and the electron transport layer. By providing the electron injection buffer layer, the injection barrier between the charge generation region and the electron transport layer can be alleviated, so that electrons generated in the charge generation region can be easily injected into the electron transport layer.

[0494] The electron injection buffer layer preferably contains an alkali metal or an alkaline earth metal, and may contain, for example, an alkali metal compound or an alkaline earth metal compound. Specifically, the electron injection buffer layer preferably contains an inorganic compound containing an alkali metal and oxygen, or an inorganic compound containing an alkaline earth metal and oxygen, and may contain an inorganic compound containing lithium and oxygen (lithium oxide (Li ２ In addition, the electron injection buffer layer can be suitably made of the materials applicable to the electron injection layer described above.

[0495] The charge generation layer preferably has a layer containing a substance with high electron transport properties. This layer can also be called an electron relay layer. The electron relay layer is preferably provided between the charge generation region and the electron injection buffer layer. When the charge generation layer does not have an electron injection buffer layer, the electron relay layer is preferably provided between the charge generation region and the electron transport layer. The electron relay layer has the function of preventing interaction between the charge generation region and the electron injection buffer layer (or the electron transport layer) and smoothly transferring electrons.

[0496] For the electron relay layer, it is preferable to use a phthalocyanine-based material such as copper (II) phthalocyanine (abbreviated as CuPc) or a metal complex having a metal-oxygen bond and an aromatic ligand.

[0497] It should be noted that the charge generation region, electron injection buffer layer, and electron relay layer may not be clearly distinguishable from one another depending on their cross-sectional shapes or characteristics.

[0498] The charge generation layer may contain a donor material instead of an acceptor material. For example, the charge generation layer may contain a layer containing an electron transport material and a donor material that can be used for the electron injection layer.

[0499] When light-emitting units are stacked, an increase in driving voltage can be suppressed by providing a charge generating layer between two light-emitting units.

[0500] This embodiment mode can be combined with other embodiment modes as appropriate.

[0501] Embodiment 6 In this embodiment, electronic devices of one embodiment of the present invention will be described with reference to FIGS.

[0502] The electronic devices of this embodiment include the display device of one embodiment of the present invention in their display portions. The display device of one embodiment of the present invention can easily achieve high definition and high resolution. Therefore, the display device of one embodiment of the present invention can be used in the display portions of various electronic devices.

[0503] Examples of electronic devices include electronic devices with relatively large screens such as television sets, desktop or notebook personal computers, computer monitors, digital signage, large game machines such as pachinko machines, as well as digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and sound playback devices.

[0504] In particular, the display device of one embodiment of the present invention can be suitably used in electronic devices having a relatively small display area because it can increase the resolution. Examples of such electronic devices include wristwatch-type and bracelet-type information terminals (wearable devices), and head-mounted wearable devices such as VR devices such as head-mounted displays, AR glasses-type devices, and MR devices.

[0505] The display device of one embodiment of the present invention preferably has an extremely high resolution such as HD (1280 × 720 pixels), FHD (1920 × 1080 pixels), WQHD (2560 × 1440 pixels), WQXGA (2560 × 1600 pixels), 4K (3840 × 2160 pixels), or 8K (7680 × 4320 pixels). A resolution of 4K, 8K, or higher is particularly preferable. Furthermore, the pixel density (resolution) of the display device of one embodiment of the present invention is preferably 100 ppi or higher, more preferably 300 ppi or higher, more preferably 500 ppi or higher, more preferably 1000 ppi or higher, more preferably 2000 ppi or higher, more preferably 3000 ppi or higher, more preferably 5000 ppi or higher, and even more preferably 7000 ppi or higher. By using a display device having either or both of high resolution and high definition, it is possible to further enhance the sense of realism and depth in electronic devices for personal use, such as portable or home use. Furthermore, the screen ratio (aspect ratio) of the display device of one embodiment of the present invention is not particularly limited. For example, the display device can support various screen ratios, such as 1:1 (square), 4:3, 16:9, and 16:10.

[0506] The electronic device of this embodiment may have a sensor (including the function of detecting, detecting, or measuring force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays).

[0507] The electronic device of the present embodiment can have various functions, such as a function to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date, time, etc., a function to execute various software (programs), a wireless communication function, a function to read out programs or data recorded on a recording medium, etc.

[0508] 23A to 23D , examples of wearable devices that can be worn on the head are described. These wearable devices have at least one of the following functions: a function to display AR content, a function to display VR content, a function to display SR content, and a function to display MR content. By having an electronic device with the function to display at least one of AR, VR, SR, and MR content, it is possible to enhance the sense of immersion felt by the user.

[0509] The electronic device 700A shown in FIG. 23A and the electronic device 700B shown in FIG. 23B each have a pair of display panels 751, a pair of housings 721, a communication unit (not shown), a pair of mounting units 723, a control unit (not shown), an imaging unit (not shown), a pair of optical members 753, a frame 757, and a pair of nose pads 758.

[0510] The display device of one embodiment of the present invention can be applied to the display panel 751. Therefore, the electronic device can provide an extremely high-definition display.

[0511] The electronic device 700A and the electronic device 700B can each project an image displayed on the display panel 751 onto a display area 756 of the optical member 753. Because the optical member 753 is translucent, the user can see the image displayed in the display area superimposed on a transmitted image visually recognized through the optical member 753. Therefore, the electronic device 700A and the electronic device 700B are each electronic devices capable of AR display.

[0512] Electronic device 700A and electronic device 700B may be provided with a camera capable of capturing an image in front of them as an imaging unit. Furthermore, electronic device 700A and electronic device 700B may each be provided with an acceleration sensor such as a gyro sensor, thereby detecting the orientation of the user's head and displaying an image corresponding to that orientation in display area 756.

[0513] The communication unit has a wireless communication device, and can supply a video signal, etc. Instead of or in addition to the wireless communication device, a connector to which a cable through which a video signal and a power supply potential are supplied may be provided.

[0514] Furthermore, the electronic device 700A and the electronic device 700B are provided with batteries, which can be charged wirelessly and / or by wire.

[0515] The housing 721 may be provided with a touch sensor module. The touch sensor module has a function of detecting a touch on the outer surface of the housing 721. The touch sensor module can detect a tap operation or a slide operation by the user and perform various processes. For example, a tap operation can perform a process such as pausing or resuming a video, and a slide operation can perform a process such as fast-forwarding or fast-rewinding. Furthermore, providing a touch sensor module on each of the two housings 721 can expand the range of operations.

[0516] Various touch sensors can be used as the touch sensor module. For example, various types of touch sensors can be used, such as a capacitance type, a resistive film type, an infrared type, an electromagnetic induction type, a surface acoustic wave type, and an optical type. In particular, it is preferable to use a capacitance type or an optical type sensor in the touch sensor module.

[0517] When an optical touch sensor is used, a photoelectric conversion device (also called a photoelectric conversion element) can be used as the light receiving device. The active layer of the photoelectric conversion device can be made of either or both of an inorganic semiconductor and an organic semiconductor.

[0518] The electronic device 800A shown in Figure 23C and the electronic device 800B shown in Figure 23D each have a pair of display units 820, a housing 821, a communication unit 822, a pair of mounting units 823, a control unit 824, a pair of imaging units 825, and a pair of lenses 832.

[0519] The display device of one embodiment of the present invention can be applied to the display portion 820. Therefore, an electronic device capable of displaying images with extremely high definition can be provided. This allows a user to feel a high sense of immersion.

[0520] The display unit 820 is provided inside the housing 821 at a position that can be viewed through the lens 832. In addition, by displaying different images on the pair of display units 820, it is possible to perform three-dimensional display using parallax.

[0521] The electronic device 800A and the electronic device 800B can be said to be electronic devices for VR. A user wearing the electronic device 800A or the electronic device 800B can view an image displayed on the display unit 820 through the lens 832.

[0522] It is preferable that electronic device 800A and electronic device 800B each have a mechanism that can adjust the left and right positions of lens 832 and display unit 820 so that they are optimally positioned according to the position of the user's eyes. It is also preferable that electronic device 800A and electronic device 800B each have a mechanism that can adjust the focus by changing the distance between lens 832 and display unit 820.

[0523] The mounting unit 823 allows the user to mount the electronic device 800A or the electronic device 800B on the head. Note that, in Fig. 23C and other figures, the mounting unit 823 is shaped like the temples of glasses, but is not limited to this. The mounting unit 823 may be shaped like a helmet or a band, for example, as long as it can be worn by the user.

[0524] The imaging unit 825 has a function of acquiring external information. Data acquired by the imaging unit 825 can be output to the display unit 820. An image sensor can be used for the imaging unit 825. Furthermore, multiple cameras may be provided to support multiple angles of view, such as telephoto and wide-angle.

[0525] Although an example including the imaging unit 825 is shown here, a distance measuring sensor (hereinafter also referred to as a detection unit) capable of measuring the distance to an object may be provided. That is, the imaging unit 825 is one aspect of the detection unit. As the detection unit, for example, an image sensor or a range image sensor such as a LIDAR (Light Detection and Ranging) can be used. By using an image obtained by the camera and an image obtained by the range image sensor, more information can be obtained, enabling more accurate gesture operations.

[0526] The electronic device 800A may have a vibration mechanism that functions as a bone conduction earphone. For example, a configuration having such a vibration mechanism can be applied to one or more of the display unit 820, the housing 821, and the wearing unit 823. This allows a user to enjoy video and audio simply by wearing the electronic device 800A, without the need for separate audio equipment such as headphones, earphones, or speakers.

[0527] The electronic device 800A and the electronic device 800B may each have an input terminal to which a cable can be connected for supplying a video signal from a video output device or the like and power for charging a battery provided in the electronic device.

[0528] The electronic device of one embodiment of the present invention may have a function of wireless communication with an earphone 750. The earphone 750 has a communication unit (not shown) and has a wireless communication function. The earphone 750 can receive information (e.g., audio data) from the electronic device through the wireless communication function. For example, the electronic device 700A shown in FIG. 23A has a function of transmitting information to the earphone 750 through the wireless communication function. Furthermore, for example, the electronic device 800A shown in FIG. 23C has a function of transmitting information to the earphone 750 through the wireless communication function.

[0529] The electronic device may also have an earphone unit. Electronic device 700B shown in Fig. 23B has earphone unit 727. For example, earphone unit 727 and the control unit may be configured to be connected to each other by wire. Part of the wiring connecting earphone unit 727 and the control unit may be disposed inside housing 721 or attachment unit 723.

[0530] Similarly, electronic device 800B shown in Fig. 23D has earphone unit 827. For example, earphone unit 827 and control unit 824 can be configured to be connected to each other by wire. Part of the wiring connecting earphone unit 827 and control unit 824 may be disposed inside housing 821 or wearing unit 823. Furthermore, earphone unit 827 and wearing unit 823 may have magnets. This allows earphone unit 827 to be fixed to wearing unit 823 by magnetic force, which is preferable as it makes storage easier.

[0531] The electronic device may have an audio output terminal to which earphones or headphones can be connected. The electronic device may also have one or both of an audio input terminal and an audio input mechanism. For example, a sound collection device such as a microphone can be used as the audio input mechanism. By having the audio input mechanism, the electronic device may be endowed with the functionality of a so-called headset.

[0532] As described above, as electronic devices of one embodiment of the present invention, both glasses-type devices (such as the electronic devices 700A and 700B) and goggle-type devices (such as the electronic devices 800A and 800B) are suitable.

[0533] Furthermore, the electronic device of one embodiment of the present invention can transmit information to the earphone by wire or wirelessly.

[0534] The electronic device 6500 shown in FIG. 24A is a portable information terminal that can be used as a smartphone.

[0535] The electronic device 6500 includes a housing 6501, a display portion 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, a light source 6508, and the like. The display portion 6502 has a touch panel function.

[0536] The display device of one embodiment of the present invention can be applied to the display portion 6502 .

[0537] FIG. 24B is a schematic cross-sectional view including the end of the housing 6501 on the microphone 6506 side.

[0538] A light-transmitting protective member 6510 is provided on the display surface side of the housing 6501, and a display panel 6511, optical members 6512, a touch sensor panel 6513, a printed circuit board 6517, a battery 6518, etc. are arranged in the space surrounded by the housing 6501 and the protective member 6510.

[0539] A display panel 6511, an optical member 6512, and a touch sensor panel 6513 are fixed to the protective member 6510 by adhesive layers (not shown).

[0540] In a region outside the display portion 6502, a part of the display panel 6511 is folded back, and an FPC 6515 is connected to the folded back part. An IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to a terminal provided on a printed circuit board 6517.

[0541] The flexible display of one embodiment of the present invention can be applied to the display panel 6511. Therefore, an extremely lightweight electronic device can be realized. In addition, since the display panel 6511 is extremely thin, a large-capacity battery 6518 can be mounted thereon while keeping the thickness of the electronic device small. Furthermore, by folding back a part of the display panel 6511 and arranging a connection portion with the FPC 6515 on the back side of the pixel portion, an electronic device with a narrow frame can be realized.

[0542] 24C shows an example of a television set. A television set 7100 has a display portion 7000 built into a housing 7101. Here, the housing 7101 is supported by a stand 7103.

[0543] The display device of one embodiment of the present invention can be applied to the display portion 7000 .

[0544] 24C can be operated using operation switches provided on the housing 7101 and a separate remote control 7111. Alternatively, the display portion 7000 may be provided with a touch sensor, and the television set 7100 may be operated by touching the display portion 7000 with a finger or the like. The remote control 7111 may have a display portion that displays information output from the remote control 7111. Using operation keys or a touch panel provided on the remote control 7111, the channel and volume can be controlled, and an image displayed on the display portion 7000 can be controlled.

[0545] The television device 7100 is configured to include a receiver, a modem, and the like. Ordinary television broadcasts can be received using the receiver. Furthermore, by connecting to a wired or wireless communication network via the modem, it is possible to perform one-way (from a sender to a receiver) or two-way (between a sender and a receiver, or between receivers, etc.) information communication.

[0546] 24D shows an example of a laptop personal computer 7200. The laptop personal computer 7200 includes a housing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, and the like. The housing 7211 includes a display portion 7000.

[0547] The display device of one embodiment of the present invention can be applied to the display portion 7000 .

[0548] 24E and 24F show an example of digital signage.

[0549] 24E includes a housing 7301, a display portion 7000, and a speaker 7303. The digital signage 7300 may further include an LED lamp, operation keys (including a power switch or an operation switch), a connection terminal, various sensors, a microphone, and the like.

[0550] 24F shows a digital signage 7400 attached to a cylindrical pillar 7401. The digital signage 7400 has a display unit 7000 provided along the curved surface of the pillar 7401.

[0551] 24E and 24F, the display device of one embodiment of the present invention can be applied to the display portion 7000.

[0552] The larger the display unit 7000, the more information can be provided at one time. Also, the larger the display unit 7000, the more easily it will attract people's attention, which can increase the advertising effectiveness of, for example, advertisements.

[0553] Applying a touch panel to the display unit 7000 is preferable because it not only displays images or videos on the display unit 7000 but also allows the user to intuitively operate it. Furthermore, when used to provide information such as route information or traffic information, the intuitive operation can improve usability.

[0554] 24E and 24F , the digital signage 7300 or the digital signage 7400 is preferably capable of wirelessly linking with an information terminal 7311 or an information terminal 7411 such as a smartphone carried by a user. For example, advertising information displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or the information terminal 7411. By operating the information terminal 7311 or the information terminal 7411, the display on the display unit 7000 can be switched.

[0555] Furthermore, the digital signage 7300 or the digital signage 7400 can be made to run a game using the screen of the information terminal 7311 or the information terminal 7411 as an operation means (controller), thereby allowing an unspecified number of users to simultaneously participate in and enjoy the game.

[0556] The electronic device shown in Figures 25A to 25G has a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or an operation switch), a connection terminal 9006, a sensor 9007 (including the function of detecting, detecting, or measuring force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays), a microphone 9008, etc.

[0557] 25A to 25G, the display device of one embodiment of the present invention can be applied to the display portion 9001.

[0558] The electronic devices shown in Figures 25A to 25G have various functions. For example, they may have a function to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date, or time, a function to control processing using various software (programs), a wireless communication function, a function to read and process programs or data recorded on a recording medium, etc. Note that the functions of the electronic devices are not limited to these, and they may have various other functions. The electronic devices may have multiple display units. Furthermore, the electronic devices may have a function to include a camera or the like to capture still images or videos and store them on a recording medium (external or built-in to the camera), a function to display the captured images on a display unit, etc.

[0559] The electronic devices shown in FIGS. 25A to 25G will be described in detail below.

[0560] FIG. 25A is a perspective view showing a mobile information terminal 9101. The mobile information terminal 9101 can be used as, for example, a smartphone. Note that the mobile information terminal 9101 may be provided with a speaker 9003, a connection terminal 9006, a sensor 9007, and the like. The mobile information terminal 9101 can display text and image information on multiple surfaces. FIG. 25A shows an example in which three icons 9050 are displayed. Information 9051, indicated by a dashed rectangle, can also be displayed on another surface of the display unit 9001. Examples of the information 9051 include notifications of incoming emails, SNS messages, phone calls, etc., the title of the email or SNS message, the sender's name, the date and time, the remaining battery level, and radio wave intensity. Alternatively, an icon 9050 or the like may be displayed in the position where the information 9051 is displayed.

[0561] 25B is a perspective view showing the mobile information terminal 9102. The mobile information terminal 9102 has a function of displaying information on three or more surfaces of the display unit 9001. Here, an example is shown in which information 9052, information 9053, and information 9054 are displayed on different surfaces. For example, a user can check information 9053 displayed in a position that can be observed from above the mobile information terminal 9102 while the mobile information terminal 9102 is placed in a breast pocket of clothes. The user can check the display without taking the mobile information terminal 9102 out of the pocket and decide, for example, whether to answer a call.

[0562] 25C is a perspective view showing a tablet terminal 9103. The tablet terminal 9103 is capable of executing various applications such as mobile phone calls, e-mail, text browsing and creation, music playback, internet communication, and computer games, for example. The tablet terminal 9103 has a display unit 9001, a camera 9002, a microphone 9008, and a speaker 9003 on the front side of a housing 9000, operation keys 9005 as operation buttons on the left side of the housing 9000, and a connection terminal 9006 on the bottom.

[0563] FIG. 25D is a perspective view showing a wristwatch-type mobile information terminal 9200. The mobile information terminal 9200 can be used as, for example, a smart watch (registered trademark). The display surface of the display unit 9001 is curved, and display can be performed along the curved display surface. The mobile information terminal 9200 can also perform hands-free calling by communicating with, for example, a wirelessly capable headset. The mobile information terminal 9200 can also perform data transmission and charging with another information terminal through a connection terminal 9006. Note that charging may be performed by wireless power supply.

[0564] 25E to 25G are perspective views showing a foldable mobile information terminal 9201. Also, FIG. 25E is a perspective view of the mobile information terminal 9201 in an unfolded state, FIG. 25G is a perspective view of the mobile information terminal 9201 in a folded state, and FIG. 25F is a perspective view of a state in the process of changing from one of FIGS. 25E and 25G to the other. The mobile information terminal 9201 has excellent portability in a folded state, and excellent display visibility due to a seamless, wide display area in an unfolded state. The display portion 9001 of the mobile information terminal 9201 is supported by three housings 9000 connected by hinges 9055. For example, the display portion 9001 can be bent with a curvature radius of 0.1 mm or more and 150 mm or less.

[0565] This embodiment mode can be combined with other embodiment modes as appropriate.

[0566] 11B: subpixel, 11G: subpixel, 11R: subpixel, 100A: display device, 100B: display device, 100C: display device, 100D: display device, 100E: display device, 100F: display device, 100G: display device, 100H: display device, 100: display device, 101: layer, 110a: subpixel, 110b: subpixel, 110c: subpixel, 110d: subpixel, 110: pixel, 111B: pixel electrode, 111G: pixel electrode, 111R: pixel electrode, 112B: conductive layer, 112G: conductive layer, 112R: conductive layer, 113s: material layer, 113t: region, 113: EL layer, 114A : insulating film, 114: sidewall insulating layer, 115: common electrode, 116B: optical adjustment layer, 116G: optical adjustment layer, 116R: optical adjustment layer, 117: light-shielding layer, 120: substrate, 122: resin layer, 123: conductive layer, 124a: pixel, 124b: pixel, 126B: conductive layer, 126G: conductive layer, 126R: conductive layer, 128: layer, 129B: conductive layer, 129G: conductive layer, 129R: conductive layer, 130B: light-emitting device, 130G: light-emitting device, 130R: light-emitting device, 131: protective layer, 132B: colored layer, 132G: colored layer, 132R: colored layer, 133: lens array, 134 : insulating layer, 135G: color conversion layer, 135R: color conversion layer, 136: insulating layer, 137: gap, 138: insulating layer, 139: low refractive index material layer, 140: connecting portion, 142: adhesive layer, 150A: region, 150B: region, 150C: region, 150D: region, 150E: region, 150F: region, 151: substrate, 152: substrate, 153: insulating layer, 162: display portion, 164: circuit, 165: wiring, 166: conductive layer, 172: FPC, 173: IC, 201: transistor, 204: connecting portion, 205: transistor, 209: transistor, 210: transistor, 211: insulating Edge layer, 213: insulating layer, 214: insulating layer, 215: insulating layer, 218: insulating layer, 221: conductive layer, 222a: conductive layer, 222b: conductive layer, 223: conductive layer, 225: insulating layer, 231i: channel formation region, 231n: low resistance region, 231: semiconductor layer, 240: capacitor, 241: conductive layer, 242: connection layer, 243: insulating layer, 245: conductive layer, 251: conductive layer, 252: conductive layer, 254: insulating layer, 255a: insulating layer, 255b: insulating layer, 255c: insulating layer, 256: plug, 261: insulating layer, 262: insulating layer, 263: insulating layer, 264: insulating layer, 265: insulating layer,271: plug, 274a: conductive layer, 274b: conductive layer, 274: plug, 280: display module, 281: display section, 282: circuit section, 283a: pixel circuit, 283: pixel circuit section, 284a: pixel, 284: pixel section, 285: terminal section, 286: wiring section, 290: FPC, 291: substrate, 292: substrate, 301A: substrate, 301B: substrate, 301: substrate, 310A: transistor, 310B: transistor, 310: transistor, 311: conductive layer, 312: low resistance region, 313: insulating layer, 314: insulating layer, 315: element isolation layer, 320A: transistor, 320B: transistor, 320: transistor, 321: semiconductor layer, 323: insulating layer, 324: conductive layer, 325: conductive layer, 326: insulating layer, 327: conductive layer, 328: insulating layer, 329: insulating layer, 331: substrate, 332: insulating layer, 335: insulating layer, 336: insulating layer, 341: conductive layer, 342: conductive layer, 343: plug, 344: insulating layer, 345: insulating layer, 346: insulating layer, 347: bump, 348: adhesive layer, 700A: electronic device, 700B: electronic device, 721: housing, 723: wearing part, 727: earphone part, 750: earphone, 751: display panel, 7 53: Optical member, 756: Display area, 757: Frame, 758: Nose pad, 761: Lower electrode, 762: Upper electrode, 763a: Light-emitting unit, 763b: Light-emitting unit, 763c: Light-emitting unit, 763: EL layer, 764: Layer, 771a: Light-emitting layer, 771b: Light-emitting layer, 771c: Light-emitting layer, 771: Light-emitting layer, 772a: Light-emitting layer, 772b: Light-emitting layer, 772c: Light-emitting layer, 772: Light-emitting layer, 773: Light-emitting layer, 780a: Layer, 780b: Layer, 780c: Layer, 780: Layer, 781: Layer, 782: Layer, 785: Charge generation layer, 790a: Layer, 790b: Layer, 790c: Layer , 790: layer, 791: layer, 792: layer, 800A: electronic device, 800B: electronic device, 820: display unit, 821: housing, 822: communication unit, 823: wearing unit, 824: control unit, 825: imaging unit, 827: earphone unit, 832: lens, 6500: electronic device, 6501: housing, 6502: display unit, 6503: power button, 6504: button, 6505: speaker, 6506: microphone, 6507: camera, 6508: light source, 6510: protective member, 6511: display panel, 6512: optical member, 6513: touch sensor panel, 6515: FPC, 6516: IC,6517: Printed circuit board, 6518: Battery, 7000: Display unit, 7100: Television device, 7101: Housing, 7103: Stand, 7111: Remote control device, 7200: Notebook personal computer, 7211: Housing, 7212: Keyboard, 7213: Pointing device, 7214: External connection port, 7300: Digital signage, 7301: Housing, 7303: Speaker, 7311: Information terminal, 7400: Digital signage, 7 401: Pillar, 7411: Information terminal, 9000: Housing, 9001: Display unit, 9002: Camera, 9003: Speaker, 9005: Operation keys, 9006: Connection terminal, 9007: Sensor, 9008: Microphone, 9050: Icon, 9051: Information, 9052: Information, 9053: Information, 9054: Information, 9055: Hinge, 9101: Portable information terminal, 9102: Portable information terminal, 9103: Tablet terminal, 9200: Portable information terminal, 9201: Portable information terminal,

Claims

1. A display device having a first light-emitting device, a second light-emitting device, a first insulating layer, a first sidewall insulating layer, and a second sidewall insulating layer, wherein the first light-emitting device includes a first pixel electrode having a region located above the first insulating layer, a first optical adjustment layer having a region located above the first pixel electrode, a part of a first layer having a region located above the first optical adjustment layer, and a part of a common electrode having a region located above the part of the first layer; the second light-emitting device includes a second pixel electrode having a region located above the first insulating layer, a second optical adjustment layer having a region located above the second pixel electrode, another part of the first layer having a region located above the second optical adjustment layer, and another part of the common electrode having a region located above the another part of the first layer; the first layer has a light-emitting material; the thickness of the first optical adjustment layer is greater than the thickness of the second optical adjustment layer; the first insulating layer has a recess; the first sidewall insulating layer has a region in contact with the bottom surface of the recess, a region in contact with the side surface of the recess, a region in contact with the side surface of the first pixel electrode, and a region in contact with the side surface of the first optical adjustment layer; the first layer has a region in contact with the entire upper surface of the first optical adjustment layer; the second sidewall insulating layer has a region in contact with the bottom surface of the recess, a region in contact with the side surface of the recess, a region in contact with the side surface of the second pixel electrode, and a region in contact with the side surface of the second optical adjustment layer; the first layer has a region in contact with the entire upper surface of the second optical adjustment layer.

2. A display device having a first light-emitting device, a second light-emitting device, a first insulating layer, a first sidewall insulating layer, a second sidewall insulating layer, a first color conversion layer, and a first coloring layer, wherein the first light-emitting device includes a first pixel electrode having a region located above the first insulating layer, a first optical adjustment layer having a region located above the first pixel electrode, a part of a first layer having a region located above the first optical adjustment layer, and a part of a common electrode having a region located above the part of the first layer; The second light-emitting device includes a second pixel electrode having a region located above the first insulating layer, a second optical adjustment layer having a region located above the second pixel electrode, another part of the first layer having a region located above the second optical adjustment layer, and another part of the common electrode having a region located above another part of the first layer. The first color conversion layer overlaps with the first light-emitting device. The first coloring layer overlaps with the first light-emitting device through the first color conversion layer. The first layer has a light-emitting material that emits blue light. The first color conversion layer has a function of converting blue light into light with a wavelength longer than that of blue light. The first coloring layer has a function of transmitting light with a wavelength longer than that of blue light. The thickness of the first optical adjustment layer is greater than the thickness of the second optical adjustment layer. The first insulating layer has a recess. The first sidewall insulating layer has a region in contact with the bottom surface of the recess, a region in contact with the side surface of the recess, a region in contact with the side surface of the first pixel electrode, and a region in contact with the side surface of the first optical adjustment layer. The first layer has a region in contact with the entire upper surface of the first optical adjustment layer. The second sidewall insulating layer has a region in contact with the bottom surface of the recess, a region in contact with the side surface of the recess, a region in contact with the side surface of the second pixel electrode, and a region in contact with the side surface of the second optical adjustment layer. The first layer has a region in contact with the entire upper surface of the second optical adjustment layer. A display device. [

3. ] A display device having a first light-emitting device, a second light-emitting device, a first insulating layer, a first sidewall insulating layer, a second sidewall insulating layer, a first color conversion layer, a first coloring layer, and a second insulating layer. The first light-emitting device includes a first pixel electrode having a region located above the first insulating layer, a first optical adjustment layer having a region located above the first pixel electrode, a part of the first layer having a region located above the first optical adjustment layer, and a part of the common electrode having a region located above the part of the first layer. The second light-emitting device includes a second pixel electrode having a region located above the first insulating layer, a second optical adjustment layer having a region located above the second pixel electrode, another part of the first layer having a region located above the second optical adjustment layer, and another part of the common electrode having a region located above another part of the first layer. The first color conversion layer overlaps with the first light-emitting device, The second insulating layer has a region located above the first color conversion layer and voids, The first colored layer overlaps with the first light-emitting device via the voids and the first color conversion layer, The first layer has a light-emitting material that emits blue light, The first color conversion layer has a function of converting blue light into light with a longer wavelength than blue, The first colored layer has a function of transmitting light with a longer wavelength than blue, The thickness of the first optical adjustment layer is greater than the thickness of the second optical adjustment layer, The first insulating layer has a recess, The first sidewall insulating layer has a region in contact with the bottom surface of the recess, a region in contact with the side surface of the recess, a region in contact with the side surface of the first pixel electrode, and a region in contact with the side surface of the first optical adjustment layer, The first layer has a region in contact with the entire upper surface of the first optical adjustment layer, The second sidewall insulating layer has a region in contact with the bottom surface of the recess, a region in contact with the side surface of the recess, a region in contact with the side surface of the second pixel electrode, and a region in contact with the side surface of the second optical adjustment layer, The first layer has a region in contact with the entire upper surface of the second optical adjustment layer, a display device.

4. A first light-emitting device, a second light-emitting device, a first insulating layer, a first sidewall insulating layer, and a second sidewall insulating layer, The first light-emitting device has a first pixel electrode having a region located above the first insulating layer, a first optical adjustment layer having a region located above the first pixel electrode, a part of the first layer having a region located above the first optical adjustment layer, and a part of a common electrode having a region located above the part of the first layer, The second light-emitting device has a second pixel electrode having a region located above the first insulating layer, a second optical adjustment layer having a region located above the second pixel electrode, another part of the first layer having a region located above the second optical adjustment layer, and another part of the common electrode having a region located above the another part of the first layer, The first layer has a light-emitting material, The thickness of the first optical adjustment layer is greater than the thickness of the second optical adjustment layer, The first insulating layer has a recess, The first sidewall insulating layer has a region in contact with the bottom surface of the recess, a region in contact with the side surface of the recess, a region in contact with the side surface of the first pixel electrode, and a region in contact with the side surface of the first optical adjustment layer. The first sidewall insulating layer does not contact the upper surface of the first optical adjustment layer. The second sidewall insulating layer has a region in contact with the bottom surface of the recess, a region in contact with the side surface of the recess, a region in contact with the side surface of the second pixel electrode, and a region in contact with the side surface of the second optical adjustment layer. The second sidewall insulating layer does not contact the upper surface of the second optical adjustment layer, a display device.

5. A display device having a first light-emitting device, a second light-emitting device, a first insulating layer, a first sidewall insulating layer, a second sidewall insulating layer, a first color conversion layer, and a first coloring layer. The first light-emitting device includes a first pixel electrode having a region located above the first insulating layer, a first optical adjustment layer having a region located above the first pixel electrode, a part of a first layer having a region located above the first optical adjustment layer, and a part of a common electrode having a region located above the part of the first layer. The second light-emitting device includes a second pixel electrode having a region located above the first insulating layer, a second optical adjustment layer having a region located above the second pixel electrode, another part of the first layer having a region located above the second optical adjustment layer, and another part of the common electrode having a region located above the another part of the first layer. The first color conversion layer overlaps with the first light-emitting device. The first coloring layer overlaps with the first light-emitting device through the first color conversion layer. The first layer has a light-emitting material that emits blue light. The first color conversion layer has a function of converting blue light into light with a longer wavelength than blue light. The first coloring layer has a function of transmitting light with a longer wavelength than blue light. The thickness of the first optical adjustment layer is greater than the thickness of the second optical adjustment layer. The first insulating layer has a recess. The first sidewall insulating layer has a region in contact with the bottom surface of the recess, a region in contact with the side surface of the recess, a region in contact with the side surface of the first pixel electrode, and a region in contact with the side surface of the first optical adjustment layer. The first sidewall insulating layer does not contact the upper surface of the first optical adjustment layer. The second sidewall insulating layer has a region in contact with the bottom surface of the recess, a region in contact with the side surface of the recess, a region in contact with the side surface of the second pixel electrode, and a region in contact with the side surface of the second optical adjustment layer. The display device in which the second sidewall insulating layer does not contact the upper surface of the second optical adjustment layer.

6. A first light-emitting device, a second light-emitting device, a first insulating layer, a first sidewall insulating layer, a second sidewall insulating layer, a first color conversion layer, a first coloring layer, and a second insulating layer. The first light-emitting device has a first pixel electrode having a region located above the first insulating layer, a first optical adjustment layer having a region located above the first pixel electrode, a part of a first layer having a region located above the first optical adjustment layer, and a part of a common electrode having a region located above the part of the first layer. The second light-emitting device has a second pixel electrode having a region located above the first insulating layer, a second optical adjustment layer having a region located above the second pixel electrode, another part of the first layer having a region located above the second optical adjustment layer, and another part of the common electrode having a region located above the another part of the first layer. The first color conversion layer has an overlap with the first light-emitting device. The second insulating layer has a region located above the first color conversion layer and a void. The first coloring layer has an overlap with the first light-emitting device through the void and the first color conversion layer. The first layer has a light-emitting material that emits blue light. The first color conversion layer has a function of converting blue light into light having a longer wavelength than blue light. The first coloring layer has a function of transmitting light having a longer wavelength than blue light. The thickness of the first optical adjustment layer is thicker than the thickness of the second optical adjustment layer. The first insulating layer has a recess. The first sidewall insulating layer has a region in contact with the bottom surface of the recess, a region in contact with the side surface of the recess, a region in contact with the side surface of the first pixel electrode, and a region in contact with the side surface of the first optical adjustment layer. The first sidewall insulating layer does not contact the upper surface of the first optical adjustment layer. The second sidewall insulating layer has a region in contact with the bottom surface of the recess, a region in contact with the side surface of the recess, a region in contact with the side surface of the second pixel electrode, and a region in contact with the side surface of the second optical adjustment layer. The display device, wherein the second sidewall insulating layer does not contact the upper surface of the second optical adjustment layer.