Display device

Abstract

An organic EL display device (1) comprises a TFT layer (20) and a light-emitting element layer (60) provided on a substrate layer (10) in the stated order. A camera (3) is disposed on the rear-surface side of the substrate layer. From within a display area, a second display area (DA2) inwards of a first display area (DA1) transmits external light received by the camera. The second display area (DA2) is provided with a connection line (40r) that electrically connects a TFT (50) and an organic EL element (70). The connection line includes a transparent wiring layer (TL1). A pixel electrode of the second display area has a first area (PB1) provided so as to overlap the transparent wiring layer, and a second area (PB2) formed on the same layer as the transparent wiring layer.

Description

display device

[0001] The present disclosure relates to a display device.

[0002] In recent years, organic electroluminescence (EL) display devices using organic electroluminescence (hereinafter referred to as EL) elements have been put to practical use. When used as a display for an information terminal such as a smartphone or a tablet terminal, or as a display for two-way communication such as a videophone or a videoconference, the organic EL display device is combined with a camera that captures the front side of the device where an image is displayed, that is, a so-called in-camera.

[0003] In an organic EL display device with an in-camera, it has been proposed to arrange the camera on the rear side of the device at a position overlapping the display area in a plan view. An example of such an organic EL display device is disclosed in Patent Document 1.

[0004] Japanese Patent Application Laid-Open No. 2022-041886

[0005] In the organic EL display device with an in-camera as described above, the portion of the display area overlapping with the camera in a planar view is a transparent area that transmits external light. Connection lines connecting the organic EL elements and pixel circuits are provided in this transparent area. These connection lines are preferably made of a transparent wiring layer that is optically transparent to increase the transmittance of light used by the camera in the display area. When the organic EL elements are top-emission type, the pixel electrodes that constitute the organic EL elements are optically reflective. Therefore, the pixel electrodes and the transparent wiring layer must be formed separately. In such cases, the pixel electrodes are provided overlapping the transparent wiring layer so as to be contained within the transparent wiring layer in a planar view.

[0006] However, such a configuration requires an alignment margin for each light-emitting element, which is the sum of the margin between the patterns of the transparent conductive layer and the pixel electrode, and the margin between the patterns of the pixel electrode and the components disposed above it. Therefore, a relatively long distance must be secured between adjacent pixel electrodes. As a result, high-resolution display images in the display device are hindered. This problem also occurs when a transparent conductive layer is formed in the same layer as the transparent wiring layer and made of the same material in a general portion of the display area outside the transmissive area, and the pixel electrode is disposed over the transparent conductive layer.

[0007] The object of the present disclosure is to increase the transmittance of light used by the electronic components in the display area and to increase the resolution of the displayed image in a display device in which electronic components that utilize light are stacked on the back side of the display area.

[0008] The present disclosure is directed to a display device. A display device according to a first aspect of the present disclosure includes a substrate, a thin-film transistor layer provided on the substrate, and a light-emitting element layer provided on the thin-film transistor layer. The thin-film transistor layer includes a plurality of thin-film transistors, and the light-emitting element layer includes a plurality of light-emitting elements, each corresponding to a plurality of sub-pixels constituting a display region. Electronic components that utilize light are disposed on the rear side of the substrate at a position overlapping the display region in a plan view. The display region includes a first display region and a second display region provided inside the first display region and transmitting light utilized by the electronic components. The second display region includes connection lines that electrically connect the thin-film transistors and the light-emitting elements. The connection lines include a light-transmitting transparent wiring layer. The pixel electrodes in the second display region include a first region that overlaps the transparent wiring layer and a second region that is formed on the same layer as the transparent wiring layer.

[0009] A display device according to a second aspect of the present disclosure includes a substrate, a thin film transistor layer provided on the substrate, and a light-emitting element layer provided on the thin film transistor layer. The thin film transistor layer includes a plurality of thin film transistors, and the light-emitting element layer includes a plurality of light-emitting elements, each corresponding to a plurality of sub-pixels constituting a display region. Electronic components that utilize light are disposed on the rear side of the substrate at a position overlapping the display region in a plan view. The display region includes a first display region and a second display region provided inside the first display region and transmitting light utilized by the electronic components. The second display region includes connection lines that electrically connect the thin film transistors and the light-emitting elements. The connection lines include a light-transmitting transparent wiring layer. The pixel electrodes in the first display region include a first region that overlaps a transparent conductive layer formed in the same layer and made of the same material as the transparent wiring layer, and a second region that is formed on the same layer as the transparent conductive layer.

[0010] According to the display device according to the present disclosure, it is possible to increase the transmittance of light used by electronic components in the display area and to increase the resolution of the displayed image.

[0011] FIG. 1 is a plan view illustrating a schematic configuration of an organic EL display device according to Embodiment 1. FIG. 2 is a cross-sectional view of the organic EL display device taken along line II-II in FIG. 1. FIG. 3 is a plan view illustrating pixels and various wirings in a first display region of the organic EL display device. FIG. 4 is a cross-sectional view of the first display region of the organic EL display device taken along line IV-IV in FIG. 3. FIG. 5 is an equivalent circuit diagram illustrating a pixel circuit. FIG. 6 is a plan view illustrating a schematic configuration of a second display region of the organic EL display device and its surroundings. FIG. 7 is a plan view illustrating a main part of the organic EL display device surrounded by VII in FIG. 6. FIG. 8 is a cross-sectional view of the main part of the organic EL display device taken along line VIII-VIII in FIG. 7. FIG. 9 is a cross-sectional view of the main part of the organic EL display device taken along line IX-IX in FIG. 7. FIG. 10 is a cross-sectional view illustrating a part of a manufacturing process for the organic EL display device according to Embodiment 1. The right side of FIG. 10 is a cross-sectional view of a part corresponding to FIG. 4, and the left side of FIG. 10 is a cross-sectional view of a part corresponding to FIG. 8. FIG. 11 is a cross-sectional view illustrating a part of a manufacturing process for the organic EL display device according to Embodiment 1. The right side of FIG. 11 is a cross-sectional view of a portion corresponding to FIG. 4 , and the left side of FIG. 11 is a cross-sectional view of a portion corresponding to FIG. 8 . FIG. 12 is a cross-sectional view showing a portion of a manufacturing process for the organic EL display device of Embodiment 1. The right side of FIG. 12 is a cross-sectional view of a portion corresponding to FIG. 4 , and the left side of FIG. 12 is a cross-sectional view of a portion corresponding to FIG. 8 . FIG. 13 is a cross-sectional view showing a portion of a manufacturing process for the organic EL display device of Embodiment 1. The right side of FIG. 13 is a cross-sectional view of a portion corresponding to FIG. 4 , and the left side of FIG. 13 is a cross-sectional view of a portion corresponding to FIG. 8 . FIG. 14 is a cross-sectional view showing a portion of a manufacturing process for the organic EL display device of Embodiment 1. The right side of FIG. 14 is a cross-sectional view of a portion corresponding to FIG. 4 , and the left side of FIG. 14 is a cross-sectional view of a portion corresponding to FIG. 8 . FIG. 15 is a cross-sectional view showing a portion of a manufacturing process for the organic EL display device of Embodiment 1. The right side of FIG. 15 is a cross-sectional view of a portion corresponding to FIG. 4 , and the left side of FIG. 15 is a cross-sectional view of a portion corresponding to FIG. 8 . FIG. 16 is a cross-sectional view showing a portion of a manufacturing process for the organic EL display device of Embodiment 1. The right side of Fig. 16 is a cross-sectional view of a portion corresponding to Fig. 4, and the left side of Fig. 16 is a cross-sectional view of a portion corresponding to Fig. 8. Fig. 17 is a cross-sectional view showing a part of the manufacturing process of the organic EL display device of embodiment 1.The right side of FIG. 17 is a cross-sectional view of a portion corresponding to FIG. 4 , and the left side of FIG. 17 is a cross-sectional view of a portion corresponding to FIG. 8 . FIG. 18 is a cross-sectional view showing a portion of a manufacturing process for the organic EL display device of Embodiment 1. The right side of FIG. 18 is a cross-sectional view of a portion corresponding to FIG. 4 , and the left side of FIG. 18 is a cross-sectional view of a portion corresponding to FIG. 8 . FIG. 19 is a cross-sectional view showing a portion of a manufacturing process for the organic EL display device of Embodiment 1. The right side of FIG. 19 is a cross-sectional view of a portion corresponding to FIG. 4 , and the left side of FIG. 19 is a cross-sectional view of a portion corresponding to FIG. 8 . FIG. 20 is a cross-sectional view showing a portion of a manufacturing process for the organic EL display device of Embodiment 1. The right side of FIG. 20 is a cross-sectional view of a portion corresponding to FIG. 4 , and the left side of FIG. 20 is a cross-sectional view of a portion corresponding to FIG. 8 . FIG. 21 is a cross-sectional view of a first display region of the organic EL display device of Embodiment 2, corresponding to FIG. 4 . FIG. 22 is a cross-sectional view showing a portion of a manufacturing process for the organic EL display device of Embodiment 2. The right side of FIG. 22 is a cross-sectional view of a portion corresponding to FIG. 4 , and the left side of FIG. 22 is a cross-sectional view of a portion corresponding to FIG. 8 . FIG. 23 is a cross-sectional view showing a portion of a manufacturing process for the organic EL display device of Embodiment 2. The right side of Fig. 23 is a cross-sectional view of a portion corresponding to Fig. 4, and the left side of Fig. 23 is a cross-sectional view of a portion corresponding to Fig. 8. Fig. 24 is a cross-sectional view of a first display region of the organic EL display device of embodiment 3, corresponding to Fig. 4. Fig. 25 is a cross-sectional view showing a part of a manufacturing process of the organic EL display device of embodiment 3. The right side of Fig. 25 is a cross-sectional view of a portion corresponding to Fig. 4, and the left side of Fig. 25 is a cross-sectional view of a portion corresponding to Fig. 8. Fig. 26 is a cross-sectional view showing a part of a manufacturing process of the organic EL display device of embodiment 3. The right side of Fig. 26 is a cross-sectional view of a portion corresponding to Fig. 4, and the left side of Fig. 26 is a cross-sectional view of a portion corresponding to Fig. 8.

[0012] Exemplary embodiments will be described in detail below with reference to the drawings. In the following embodiments, an organic EL display device will be described as an example of a display device according to the present disclosure. Note that the drawings are intended to conceptually explain the technology of the present disclosure. Therefore, the drawings may exaggerate or simplify dimensions, ratios, or numbers to facilitate understanding of the technology of the present disclosure.

[0013] In the following embodiments, the term "first direction" refers to the horizontal direction of the screen when the display device is oriented in a predetermined state of use. The term "second direction" refers to the direction perpendicular to the first direction and to the vertical direction of the screen when the display device is oriented in a predetermined state of use. A row of components such as subpixels refers to a horizontal arrangement of multiple components in a row in the first direction. A column of components such as subpixels refers to a vertical arrangement of multiple components in a row in the second direction.

[0014] In the following embodiments, when a component such as a film, layer, or element is provided or formed on another component such as another film, layer, or element, it does not only mean that the other component exists directly on top of the other component, but also includes cases where another component such as a film, layer, or element is interposed between the two components.

[0015] In the following embodiments, a description that a certain component is connected to another component means that the components are electrically connected unless otherwise specified. This description not only means a direct connection, but also an indirect connection via other components, within the scope of the gist of the technology of the present disclosure. This description also includes a case where another component is integrated with a certain component, that is, a part of a certain component constitutes the other component.

[0016] In the following embodiments, a description that a certain component is in the same layer as another component means that the certain component is formed by the same process as the other component. A description that a certain component is in a layer below another component means that the certain component is formed by a process earlier than the other component. A description that a certain component is in a layer above another component means that the certain component is formed by a process later than the other component.

[0017] Furthermore, in the following embodiments, a description that a certain component is identical to or equivalent to another component does not mean only that the certain component and the other component are completely identical or completely equivalent, but also includes that the certain component and the other component are substantially identical or substantially equivalent, such as fluctuating within the range of manufacturing variations or tolerances.

[0018] Furthermore, in the following embodiments, the terms "first," "second," "third," etc. are used to distinguish between terms to which these terms are attached, and do not limit the number of terms or even their order.

[0019] An organic EL display device 1 according to this embodiment is used in mobile devices such as multi-function phones known as smartphones and tablet terminals. The organic EL display device 1 may also be used in various other devices such as personal computers (PCs) and television sets.

[0020] 1 and 2, an organic EL display device 1 is combined with a camera 3 to form a display device with an in-camera that can capture an image of the front side of the screen using the camera 3. The organic EL display device 1 has a display area DA and a frame area FA.

[0021] The display area DA is an area where an image is displayed. The display area DA constitutes a screen. The display area DA is provided in, for example, a rectangular shape. The display area DA may be a substantially rectangular shape with at least one arc-shaped side, at least one arc-shaped corner, or at least one notch-shaped side, or may be any other shape.

[0022] As shown in Fig. 3, the display area DA is composed of a plurality of pixels PX. The plurality of pixels PX are arranged in a matrix. Each pixel PX is composed of three sub-pixels SP. The three sub-pixels SP are a sub-pixel SPr that emits red light, a sub-pixel SPg that emits green light, and a sub-pixel SPb that emits blue light. These three sub-pixels SPr, SPg, and SPb are arranged, for example, in a striped pattern.

[0023] 1 and 2 , the camera 3 is disposed on the rear side of the substrate layer 10 constituting the organic EL display device 1, at a position overlapping the display area DA in a plan view. The camera 3 is an example of an electronic component that utilizes light. The camera 3 has an image sensor such as a CCD (Charge Coupled Device) or a CMOS (Complementary Metal Oxide Semiconductor). The camera 3 is installed inside a housing (not shown) that houses the organic EL display device 1.

[0024] The display area DA has a first display area DA1 and a second display area DA2. The first display area DA1 occupies most of the display area DA. The second display area DA2 is provided inside the first display area DA1. The second display area DA2 is an area that includes a portion that transmits light used by the camera 3. The second display area DA2 is provided, for example, in a rectangular shape on one side of the display area DA (the upper side in FIG. 1 ). The second display area DA2 may be in another shape, such as a circle or an ellipse.

[0025] The frame area FA is an area that constitutes the non-display portion other than the screen. The frame area FA is formed, for example, in a rectangular frame shape. The frame area FA may have a frame shape other than a rectangle. The frame area FA includes a terminal portion TP and a folding portion BP. The terminal portion TP is a portion for connecting to an external circuit (such as a display control circuit). The terminal portion TP is formed near the outer edge of a portion that constitutes one side of the frame area FA, extending in the first direction X along that side.

[0026] The bending portion BP is provided between the terminal portion TP and the display area DA in the frame area FA. The bending portion BP is a portion that is bent around a bending axis extending in the first direction X. The bending portion BP extends horizontally across the entire frame area FA in the first direction X. Although not shown, the inorganic insulating film that constitutes the TFT layer 20 is removed from the bending portion BP, giving the bending portion BP greater flexibility than other portions.

[0027] The frame area FA of the organic EL display device 1 is bent at a bending portion BP by, for example, about 180 degrees to form a U-shape (shown by a two-dot chain line in FIG. 2 ). As a result, the terminal portion TP is disposed on the rear side of the organic EL display device 1. The terminal portion TP has a plurality of terminals (not shown). A wiring board CB such as an FPC (Flexible Printed Circuit) is connected to the terminal portion TP.

[0028] A driving circuit DC is provided in the frame area FA of the organic EL display device 1. The driving circuit DC is arranged in a portion of the frame area FA that forms a side (each of the left and right sides in FIG. 1 ) adjacent to the side on which the terminal portion TP is provided. The driving circuit DC is monolithically formed as part of a TFT layer 20, which will be described later. The driving circuit DC includes a gate driver and an emission driver.

[0029] A first frame line 40fa and a second frame line 40fb are provided in the frame area FA of the organic EL display device 1. The first frame line 40fa and the second frame line 40fb are each formed to surround the display area DA and extend to the terminal portion TP. A high-level power supply voltage (ELVDD) is supplied to the first frame line 40fa via the wiring board CB. A low-level power supply voltage (ELVSS) is supplied to the second frame line 40fb via the wiring board CB.

[0030] The organic EL display device 1 employs an active matrix driving system. In the organic EL display device 1, light emission of each subpixel SP is controlled by a thin film transistor (hereinafter referred to as a TFT) 50, and an image is displayed by the operation of the TFT 50. As shown in FIG. 2 , the organic EL display device 1 includes a substrate layer 10, a TFT layer (thin film transistor layer) 20, a light emitting element layer 60, and a sealing film 80.

[0031] <Substrate Layer> The substrate layer 10 is a layer that forms the base of the organic EL display device 1. The substrate layer 10 is an example of a substrate. The substrate layer 10 is both optically transparent (which in this example means transparency to visible light; the same applies hereinafter) and flexible. The substrate layer 10 is formed from an organic resin material such as polyimide resin, polyamide resin, or epoxy resin. A light-transmitting protective film 11 (not shown in Figures 4, 8, 9, 21, and 24, which will be referred to later) is attached to the back surface of the substrate layer 10.

[0032] <TFT Layer> The TFT layer 20 is provided on the substrate layer 10. The TFT layer 20 includes the drive circuit DC described above. The TFT layer 20 further includes various wirings 40.

[0033] The various wirings 40 include the first frame line 40fa and the second frame line 40fb described above. Other wirings 40 include a plurality of gate lines 40g, a plurality of light-emitting control lines 40e, a plurality of power supply lines 40p, and a plurality of source lines 40s, as shown in FIG. 3 . The gate lines 40g and the light-emitting control lines 40e are examples of first metal lines. The source lines 40s and the power supply lines 40p are examples of second metal lines.

[0034] Each of the multiple gate lines 40g is a wiring that transmits a gate signal. The multiple gate lines 40g are arranged at intervals from one another in the second direction Y in the display area DA and extend parallel to one another in the first direction X. One gate line 40g is provided for each row of sub-pixels SP. Each gate line 40g is connected to a gate driver of the drive circuit DC.

[0035] Each of the plurality of light-emitting control lines 40e is a wiring that transmits an emission signal. The plurality of light-emitting control lines 40e are arranged at intervals from one another in the second direction Y in the display area DA and extend parallel to one another in the first direction X. One light-emitting control line 40e is provided for each row of sub-pixels SP. Each light-emitting control line 40e is connected to an emission driver of the drive circuit DC.

[0036] Each of the multiple power supply lines 40p is a wiring that applies a predetermined high-level power supply voltage (ELVDD). The multiple power supply lines 40p are arranged at intervals from one another in the first direction X in the display area DA and extend parallel to one another in the second direction Y. One power supply line 40p is provided for each column of sub-pixels SP. Each power supply line 40p is connected to a first frame line 40fa.

[0037] Each of the multiple source lines 40s is a wiring that transmits a source signal. The multiple source lines 40s are arranged at intervals from one another in the first direction X in the display area DA and extend parallel to one another in the second direction Y. One source line 40s is provided for each column of subpixels SP. Each source line 40s is drawn to a terminal portion TP and connected to a display control circuit (source driver) via a wiring substrate CB.

[0038] As shown in Figures 4, 8 and 9, the TFT layer 20 further includes a plurality of TFTs 50, a plurality of capacitors 51, a first planarization film 54, a second planarization film 56, a third planarization film 58, and a plurality of connecting lines 40r.

[0039] A plurality of TFTs 50 are provided corresponding to a plurality of subpixels SP. A plurality of TFTs 50 are provided for each subpixel SP. In this example, the plurality of TFTs 50 provided for each subpixel SP are a first TFT 50A, a second TFT 50B, and a third TFT 50C. For example, the first TFT 50A, the second TFT 50B, and the third TFT 50C are all configured as top-gate TFTs. Although not shown, the first TFT 50A, the second TFT 50B, and the third TFT 50C each include a gate electrode, a first terminal electrode, and a second terminal electrode.

[0040] At least one capacitor 51 is provided for each subpixel SP. Although not shown, the capacitor 51 includes a first capacitance electrode and a second capacitance electrode. The first capacitance electrode and the second capacitance electrode overlap each other via an insulating film (not shown) included in the TFT layer 20. The first capacitance electrode and the second capacitance electrode may each be formed by a part of another electrode or wiring.

[0041] The first planarization film 54 is provided so as to cover the plurality of TFTs 50 and the plurality of capacitors 51. The second planarization film 56 and the third planarization film 58 are stacked in this order on the first planarization film 54. The first planarization film 54, the second planarization film 56, and the third planarization film 58 extend over the entire display area DA. The surface of the TFT layer 20 is planarized by the first planarization film 54, the second planarization film 56, and the third planarization film 58.

[0042] The connection line 40r is a wiring that connects a predetermined TFT 50 (third TFT 50C) and the organic EL element 70, and a plurality of connection lines 40r are provided in each of the first display area DA1 and the second display area DA2. The connection line 40r in the first display area DA1 is provided for each sub-pixel SP. The connection line 40r in the second display area DA2 is provided for each pixel circuit PC.

[0043] Each of the plurality of connection lines 40r includes a lower layer connection line 40ra, an intermediate connection line 40rb, and an upper layer connection line 40rc. The lower layer connection line 40ra, the intermediate connection line 40rb, and the upper layer connection line 40rc are formed in different layers. The intermediate connection line 40rb corresponds to a second connection line. The upper layer connection line 40rc corresponds to a first connection line.

[0044] Each lower-layer connecting line 40ra is provided on the first planarization film 54. The lower-layer connecting line 40ra is a wiring that connects a predetermined TFT 50 (third TFT 50C) and the intermediate connecting line 40rb, and is located below the second planarization film 56. The lower-layer connecting lines 40ra are formed in an island shape for each sub-pixel SP in the first display area DA1 and for each pixel circuit PC in the second display area DA2. Each lower-layer connecting line 40ra is connected to a predetermined TFT 50 (third TFT 50C) via a first contact hole Ha formed in the first planarization film 54.

[0045] Each intermediate connection line 40rb is provided on the second planarization film 56. The intermediate connection line 40rb is a wiring that connects the lower-layer connection line 40ra and the upper-layer connection line 40rc, and ultimately a specific TFT 50 (third TFT 50C), and is located below the third planarization film 58. The intermediate connection lines 40rb are formed in an island shape for each sub-pixel SP in the first display area DA1 and for each pixel circuit PC in the second display area DA2. Each intermediate connection line 40rb is connected to a corresponding lower-layer connection line 55 via a second contact hole Hb formed in the second planarization film 56.

[0046] Each upper-layer connecting line 40rc is provided on the third planarization film 58. The upper-layer connecting line 40rc is a wiring that connects the intermediate connecting line 40rb to the organic EL element 70, and is located below the pixel electrode 61 that constitutes the organic EL element 70. The upper-layer connecting line 40rc is formed in an island shape for each sub-pixel SP in the first display area DA1 and for each pixel circuit PC in the second display area DA2. Each upper-layer connecting line 40rc is connected to the pixel electrode 61 and also to the corresponding intermediate connecting line 40rb via a third contact hole Hc formed in the third planarization film 58.

[0047] The various wirings and electrodes described above, except for the intermediate connection line 40rb and the upper connection line 40rc, are made of a metal material such as aluminum (Al), tungsten (W), molybdenum (Mo), tantalum (Ta), chromium (Cr), titanium (Ti), copper (Cu), etc., and are configured as a single layer film or a multilayer film. The intermediate connection line 40rb and the upper connection line 40rc (transparent wiring layer TL1, transparent conductive layer TL2) are each made of a crystallized transparent conductive material, and are configured as a single layer film or a multilayer film.

[0048] In this example, the transparent conductive material forming the intermediate connection line 40rb and the upper connection line 40rc (transparent wiring layer TL1, transparent conductive layer TL2) is indium tin oxide (ITO). Such intermediate connection line 40rb and upper connection line 40rc (transparent wiring layer TL1, transparent conductive layer TL2) are optically transparent and have low absorption of wavelengths in the visible light region. The lower connection line 40ra is preferably made of a metal material (e.g., a metal material containing titanium (Ti)) that is resistant to the etching solution used to pattern the intermediate connection line 40rb, i.e., that is not or is not easily corroded by the etching solution.

[0049] The first planarization film 54, the second planarization film 56, and the third planarization film 58 are each made of, for example, an organic resin material such as polyimide resin or acrylic resin, or a polysiloxane-based SOG (Spin On Glass) material. At least two of the first planarization film 54, the second planarization film 56, and the third planarization film 58 may be made of the same material. The first planarization film 54, the second planarization film 56, and the third planarization film 58 may also be made of different materials.

[0050] <Light-emitting element layer> The light-emitting element layer 60 is provided on the TFT layer 20. As shown in FIG. 4 , the light-emitting element layer 60 includes a plurality of organic EL elements (organic electroluminescence elements) 70 and an edge cover 75. The organic EL elements 70 are an example of a light-emitting element. The organic EL elements 70 are configured as a top-emission type. In the organic EL elements 70, light emitted from the organic EL layer 62 is extracted from the sealing film 80 side.

[0051] The organic EL elements 70 are provided corresponding to the sub-pixels SP. Each organic EL element 70 constitutes a sub-pixel SP. The organic EL elements 70 collectively constitute a display area DA. The light emission of each organic EL element 70 is controlled by the operation of the TFTs 50 and capacitors 51. Each organic EL element 70 has a pixel electrode 61, an organic EL layer 62, and a common electrode 63.

[0052] The pixel electrodes 61 are provided on the third planarization film 58 in each sub-pixel SP. The pixel electrodes 61 are arranged in a matrix corresponding to the sub-pixels SP. The pixel electrodes 61 are connected to predetermined TFTs 50 via lower-layer connecting lines 40ra, intermediate connecting lines 40rb, and lower-layer connecting lines 40rc. The pixel electrodes 61 function as anodes and inject holes (positive holes) into the organic EL layer 62.

[0053] The pixel electrode 61 in this example is composed of a conductive laminate CL. The conductive laminate CL is formed by sequentially laminating a first transparent electrode layer 61 a, a reflective electrode layer 61 b, and a second transparent electrode layer 61 c. The first transparent electrode layer 61 a, the reflective electrode layer 61 b, and the second transparent electrode layer 61 c are all formed of conductive materials that are etched by a common etching solution (e.g., a PAN-based etching solution).

[0054] The first transparent electrode layer 61a and the second transparent electrode layer 61c are each optically transparent. In this example, the first transparent electrode layer 61a and the second transparent electrode layer 61c are made of indium tin oxide (ITO). The first transparent electrode layer 61a and the second transparent electrode layer 61c may be made of other transparent conductive materials, such as indium zinc oxide (IZO) or indium gallium zinc oxide (In—Ga—Zn—O). The reflective electrode layer 61b is optically reflective. In this example, the reflective electrode layer 61b is made of silver (Ag). The reflective electrode layer 61b may be made of other optically reflective metal materials, such as a silver alloy, aluminum (Al), or an aluminum alloy.

[0055] The edge cover 75 is provided on the second planarization film 56. The edge cover 75 is formed in a lattice pattern to separate the multiple pixel electrodes 61. The edge cover 75 is located above the pixel electrodes 61 and covers the outer edges (peripheral end portions) of each pixel electrode 61. The edge cover 75 has multiple openings 76 that partially expose each pixel electrode 61. The periphery of each opening 76 in the edge cover 75 is surrounded by the outer edge of the pixel electrode 61 corresponding to that opening 76 in a plan view. An alignment margin M1 is provided between the periphery of each opening 76 in the edge cover 75 and the outer edge of the pixel electrode 61 corresponding to that opening 76.

[0056] A portion of the surface of the edge cover 75 protrudes toward the sealing film 80 to form a plurality of photospacers 77. The photospacers 77 are columnar supports that, for example, in the manufacture of the organic EL display device 1, serve to maintain a distance between a film-forming mask used to form a functional layer (e.g., a light-emitting layer) that constitutes the organic EL layer 62 and the surface of an object on which the film is to be formed. A plurality of photospacers 77 are provided in a predetermined arrangement in each of the first display area DA1 and the second display area DA2, and a plurality of photospacers 77 are also provided in the frame area FA.

[0057] The periphery of each opening 76 in the edge cover 75 is surrounded by the outer edge of the corresponding pixel electrode 61 in plan view. The periphery of each opening 76 in the edge cover 75 may be located inside the corresponding transparent conductive layer TL2 in plan view, or may be located outside the transparent conductive layer TL2. The edge cover 75 is made of, for example, an organic resin material such as polyimide resin or acrylic resin, or a polysiloxane-based SOG material.

[0058] The organic EL layer 62 is provided on each pixel electrode 61 within the opening 76 of the edge cover 75. The organic EL layer 62 has a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer. The hole injection layer, hole transport layer, light-emitting layer, electron transport layer, and electron injection layer are stacked in this order on the pixel electrode 61 and are made of known compounds suitable for their respective functions. The organic EL layer 62 emits light when a current is applied between the pixel electrode 61 and the common electrode 63.

[0059] The common electrode 63 is provided continuously across the entire display area DA and shared by the plurality of subpixels SP. The common electrode 63 covers the edge cover 75 and each organic EL layer 62, and overlaps each pixel electrode 61 via the organic EL layer 62. The common electrode 63 extends to the frame area FA and is connected to the second frame line 40fb. The common electrode 63 functions as a cathode and injects electrons into the organic EL layer 62. It is preferable to use a conductive material with a small work function for the common electrode 63.

[0060] Examples of materials for the common electrode 63 include conductive oxides such as indium tin oxide (ITO) and indium zinc oxide (IZO). The material for the common electrode 63 may be a metal such as silver (Ag), aluminum (Al), lithium (Li), magnesium (Mg), calcium (Ca), or ytterbium (Yb). The material for the common electrode 63 may be a metal compound or alloy. The common electrode 63 may be formed by stacking multiple layers made of conductive materials.

[0061] <Sealing Film> The sealing film 80 is provided on the light-emitting element layer 60. As shown in FIG. 4 , the sealing film 80 covers the organic EL elements 70 and protects each organic EL element 70 (particularly the organic EL layer 62) from moisture, oxygen, and the like. The sealing film 80 is provided over the entire display area DA and extends to the frame area FA. The sealing film 80 has, for example, a TFE (Thin Film Encapsulation) structure. The sealing film 80 includes a first inorganic film 81, an organic film 82, and a second inorganic film 83. The first inorganic film 81, the organic film 82, and the second inorganic film 83 are provided on the light-emitting element layer 60 in this order.

[0062] The first inorganic film 81 and the second inorganic film 83 extend further toward the outer periphery of the frame area FA than the organic film 82 and overlap each other at the peripheral edge of the frame area FA. The organic film 82 is enveloped by the first inorganic film 81 and the second inorganic film 83. The first inorganic film 81 and the second inorganic film 83 are each made of an inorganic insulating material such as silicon oxide, silicon nitride, or silicon oxynitride. The organic film 82 is made of an organic resin material such as acrylic resin, epoxy resin, silicone resin, polyurea resin, parylene resin, polyimide resin, or polyamide resin.

[0063] <Pixel Circuit> A plurality of TFTs 50 and capacitors 51 provided in each sub-pixel SP constitute a pixel circuit PC as shown in Fig. 5. The pixel circuit PC controls the light emission of the organic EL element 70 based on a gate signal, an emission signal, a source signal, a high-level power supply voltage, and a low-level power supply voltage supplied through various wirings.

[0064] In the equivalent circuit diagram shown in Fig. 5, the first terminal electrode of the TFT 50 is indicated by a circled number 1, and the second terminal electrode of the TFT 50 is indicated by a circled number 2. In addition, in the equivalent circuit diagram shown in Fig. 5, the first capacitance electrode of the capacitor 51 is indicated by a squared number 1, and the second capacitance electrode of the capacitor 51 is indicated by a squared number 2.

[0065] The gate electrode of the first TFT 50A is connected to the corresponding gate line 40g. The first terminal electrode of the first TFT 50A is connected to the corresponding source line 40s. The second terminal electrode of the first TFT 50A is connected to the corresponding second TFT 50B. The gate electrode of the second TFT 50B is connected to the corresponding second terminal electrode of the first TFT 50A. The first terminal electrode of the second TFT 50B is connected to the corresponding power supply line 40p. The second terminal electrode of the second TFT 50B is connected to the corresponding third TFT 50C.

[0066] The gate electrode of the third TFT 50C is connected to the corresponding light-emitting control line 40e. The first terminal electrode of the third TFT 50C is connected to the second terminal electrode of the corresponding second TFT 50B. The second terminal electrode of the third TFT 50C is connected to the corresponding organic EL element 70 (pixel electrode 61). The first capacitance electrode of the capacitor 51 is connected to the power supply line 40p. The second capacitance electrode of the capacitor 51 is connected to the second terminal electrode of the first TFT 50A and the gate electrode of the second TFT 50B.

[0067] <Arrangement of Organic EL Elements and Pixel Circuits> As shown in Fig. 6, in the second display area DA2, the arrangement of the organic EL elements 70 and the pixel circuits PC differs from that in the first display area DA1, and the extension of various wiring is irregular. Fig. 6 schematically illustrates the arrangement of the organic EL elements 70 and the pixel circuits PC in the second display area DA2 and the surrounding first display area DA1.

[0068] For convenience, the organic EL elements 70 are represented by circular symbols, and the pixel circuits PC are represented by rectangular symbols in the schematic diagram of Fig. 6. In addition, in the schematic diagram of Fig. 6, the organic EL elements 70 that emit red light are represented by left-slanting hatching, the organic EL elements 70 that emit green light are represented by dot hatching, and the organic EL elements 70 that emit blue light are represented by right-slanting hatching.

[0069] In the schematic diagram of Figure 6, for convenience, the gate line 40g and the light-emitting control line 40e are shown by dashed lines as a single representative wiring (first metal line 40X). The gate line 40g and the light-emitting control line 40e each extend in a similar shape to the first metal line 40X. Also, in the schematic diagram of Figure 6, for convenience, the source line 40s and the power supply line 40p are shown by dashed lines as a single representative wiring (second metal line 40Y). The source line 40s and the power supply line 40p each extend in a similar shape to the second metal line 40Y.

[0070] In the first display region DA1, the pixel circuits PC are arranged at locations that overlap the corresponding organic EL elements 70 in a plan view and in the vicinity thereof. This is shown in Fig. 6 , where the organic EL elements 70 and the pixel circuits PC are overlapped. That is, in the first display region DA1, each pixel circuit PC is provided at a position that overlaps with the sub-pixel SP formed by the corresponding organic EL element 70.

[0071] 4, in the first display area DA1, the lower-layer connection line 40ra, the intermediate connection line 40rb, and the upper-layer connection line 40rc that make up each connection line 40r are located in an area that overlaps with the corresponding pixel electrode 61 in a plan view or in the vicinity thereof, and are connected to each other in a localized range. As a result, each connection line 40r is drawn out from a predetermined TFT 50 (third TFT 50C) onto the third planarization film 58 directly above the TFT 50 or in the vicinity thereof, and connects the TFT 50 to the pixel electrode 61.

[0072] Each upper-layer connecting line 40rc in the first display region DA1 is composed of a transparent conductive layer TL2. The transparent conductive layer TL2 is a secondary component of the transparent wiring layer TL1, which will be described later. The transparent conductive layer TL2 is formed in an island shape for each sub-pixel SP in the first display region DA1. The transparent conductive layer TL2 has a shape similar to that of the pixel electrode 61, but has an area slightly smaller than that of the pixel electrode 61. Each pixel electrode 61 in the first display region DA1 is provided overlapping the corresponding transparent conductive layer TL2.

[0073] Each pixel electrode 61 covers the entire transparent conductive layer TL2 and extends to the periphery of the transparent conductive layer TL2. Each pixel electrode 61 covers at least a portion of the outer edge of the corresponding transparent conductive layer TL2. In this example, each pixel electrode 61 covers the entire outer edge (peripheral end surface) of the corresponding transparent conductive layer TL2. The outer edge of each pixel electrode 61 surrounds the entire outer edge of the corresponding transparent conductive layer TL2 in a plan view.

[0074] Each pixel electrode 61 has a first region PA1 and a second region PA2. The first region PA1 is a region of the pixel electrode 61 that is provided so as to overlap the transparent conductive layer TL2. The second region PA2 is a region of the pixel electrode 61 that is formed on the same layer as the transparent conductive layer TL2. In this example, the second region PA2 of each pixel electrode 61 is formed on the surface of the third planarization film 58 and has a frame shape that extends around the entire periphery of the first region PA1. The inner peripheral portion of the second region PA2 overlaps the peripheral end surface of the transparent conductive layer TL2.

[0075] 6, in the second display area DA2, the pixel circuits PC are arranged at locations spaced apart from the corresponding organic EL elements 70 so as not to overlap them in a plan view. In the second display area DA2, the area in which the organic EL elements 70 constituting each sub-pixel SP are arranged and the area in which the pixel circuits PC corresponding to each organic EL element 70 are arranged are provided separately from each other.

[0076] Specifically, the second display area DA2 includes a light-emitting element area EA and a circuit arrangement area CA. The light-emitting element area EA is provided in the central portion of the second display area DA2. A plurality of organic EL elements 70 are arranged in the light-emitting element area EA. The circuit arrangement area CA is provided around the light-emitting element area EA. A plurality of pixel circuits PC are provided in the circuit arrangement area CA. Each of these pixel circuits PC controls the light emission of the organic EL element 70 arranged in the light-emitting element area EA.

[0077] In the light-emitting element area EA, multiple sets of organic EL elements 70 are arranged, with two adjacent organic EL elements 70 constituting one set. The two organic EL elements 70 in each set are arranged side by side in the first direction X. The light emitted by these two organic EL elements 70 has the same color. A pixel circuit PC in the circuit arrangement area CA is provided for each set of organic EL elements 70, and commonly controls the light emission of the two organic EL elements 70 in that set.

[0078] The connection lines 40r in the second display area DA2 are provided for each set of organic EL elements 70 and pixel circuits PC. Each of these connection lines 40r connects the organic EL elements 70 of each set to the pixel circuits PC, more precisely, to a specific TFT 50 (third TFT 50C). Each of the multiple upper-layer connection lines 40rc in the second display area DA2 is connected to two organic EL elements 70 in a corresponding set, and connects these two organic EL elements 70 to each other. The two organic EL elements 70 in each set are connected to a common upper-layer connection line 40rc.

[0079] As shown in Fig. 9 , each of the multiple intermediate connection lines 40rb in the second display region DA2 is drawn from the light-emitting element region EA to the circuit arrangement region CA, and is connected to a predetermined TFT 50 (third TFT 50C) in the circuit arrangement region CA via a lower-layer connection line 40ra. As shown in Fig. 7 , in the second display region DA2, some of the intermediate connection lines 40rb and upper-layer connection lines 40rc that are not connected to each other extend so as to intersect with each other in a planar view. As shown in Fig. 8 , a third planarization film 58 is interposed at the intersections of these intermediate connection lines 40rb and upper-layer connection lines 40rc.

[0080] Each upper-layer connection line 40rc in the second display region DA2 has a pair of electrode terminals 40t and a linking line 40l. The pair of electrode terminals 40t are provided separately at both ends of the upper-layer connection line 40rc and connected to pixel electrodes 61 of different organic EL elements 70. The linking line 40l links the pair of electrode terminals 40t. Each electrode terminal 40t has a shape similar to that of the corresponding pixel electrode 61 and has an area slightly smaller than that of the pixel electrode 61. The upper-layer connection lines 40rc are formed of a transparent wiring layer TL1. That is, each connection line 40r in the second display region DA2 includes a transparent wiring layer TL1 formed on the same layer (third planarization film 58) as the pixel electrode 61.

[0081] Each pixel electrode 61 in the second display area DA2 is disposed so as to overlap a portion of the corresponding transparent wiring layer TL1 that constitutes the electrode terminal 40t. The pixel electrode 61 covers the portion of the transparent wiring layer TL1 that constitutes the electrode terminal 40t and extends to the periphery of the portion that constitutes the electrode terminal 40t. The pixel electrode 61 covers a portion of the outer edge of the transparent wiring layer TL1, i.e., the entire outer edge (peripheral end surface) of the portion that constitutes the electrode terminal 40t in this example. The outer edge of the pixel electrode 61 then surrounds the outer edge of the portion of the transparent wiring layer TL1 that constitutes the electrode terminal 40t in a planar view.

[0082] Each pixel electrode 61 has a first region PB1 and a second region PB2. The first region PB1 is a region of the pixel electrode 61 that is provided so as to overlap the transparent wiring layer TL1. The second region PB2 is a region of the pixel electrode 61 that is formed on the same layer as the transparent wiring layer TL1. In this example, the second region PB2 of each pixel electrode 61 is formed on the surface of the third planarization film 58 and has a frame shape that extends around the entire periphery of the first region PB1. The inner peripheral portion of the second region PB2 overlaps the peripheral end surface of the transparent wiring layer TL1.

[0083] The transparent wiring layer TL1 and the transparent conductive layer TL2 are formed in the same layer and made of the same material. As described above, the transparent wiring layer TL1 and the transparent conductive layer TL2 in this example are formed of a crystallized transparent conductive material, indium tin oxide (ITO) in this example, and have relatively high light transmittance. Indium tin oxide (ITO) has the property of being corroded by a predetermined etching solution before crystallization, but being resistant to corrosion by the etching solution after crystallization. The "predetermined etching solution" here includes the etching solution used to pattern the transparent wiring layer TL1 and the transparent conductive layer TL2 (ITO etching solution in this example) and the etching solution used to pattern the pixel electrodes 61 (first transparent electrode layer 61a, reflective electrode layer 61b, and second transparent electrode layer 61c) (PAN-based etching solution in this example).

[0084] 6 , each of the first metal wires 40X corresponding to the plurality of subpixels SP in the second display region DA2 extends outside the group of organic EL elements 70 arranged in the light-emitting element region EA. Each of the first metal wires 40X extends through the circuit arrangement region CA, avoiding the light-emitting element region EA, and is connected to the pixel circuit PC (the second terminal electrode of the third TFT 50C) in the circuit arrangement region CA. Furthermore, each of the second metal wires 40Y corresponding to the plurality of subpixels SP in the second display region DA2 extends outside the group of organic EL elements 70 arranged in the light-emitting element region EA.

[0085] In this way, in the second display area DA2, the connection lines 40r (intermediate connection lines 40rb and upper connection lines 40rc), the first metal lines 40X and the second metal lines 40Y are designed so as not to reduce the transmittance of light from the front side to the back side in the light-emitting element area EA.

[0086] —Operation of Organic EL Display Device— In the organic EL display device 1, in each subpixel SP, the corresponding light-emission control line 40 e is first selected, and an emission signal indicating an inactive state is input to the third TFT 50 C via the light-emission control line 40 e. This turns the third TFT 50 C into an off state, and the organic EL element 70 becomes a non-emitting state.

[0087] Then, the gate line 40g corresponding to the organic EL element 70 in the non-emitting state is selected, and a gate signal indicating an active state is input to the first TFT 50A via the gate line 40g. This turns on the first TFT 50A. When the first TFT 50A turns on, a predetermined voltage corresponding to a source signal transmitted via the source line 40s is applied to the second TFT 50B and written to the capacitor 51.

[0088] Then, the corresponding light-emitting control line 40e is selected, and an emission signal indicating an active state is input to the third TFT 50C, which turns on the third TFT 50C. When the third TFT 50C turns on, a drive current corresponding to the voltage applied to the gate electrode of the second TFT 50B is supplied from the power supply line 40p to the organic EL element 70.

[0089] In this way, the organic EL element 70 (light-emitting layer) emits light at a luminance corresponding to the drive current in each sub-pixel SP, thereby displaying an image in the organic EL display device 1. Note that even if the first TFT 50A is turned off, the light emission of the organic EL element 70 is maintained for each sub-pixel SP until the gate signal for the next frame is input, because the voltage applied to the gate electrode of the second TFT 50B is held by the capacitor 51.

[0090] Furthermore, in the organic EL display device 1, external light is transmitted from the front side to the back side in the second display area DA2. The external light that has transmitted through the second display area DA2 is incident on the light receiving section of the camera 3. The camera 3 receives the external light that has transmitted through the second display area DA2 and converts it into an electrical signal using an image sensor. As a result, in the organic EL display device 1, the camera 3 captures an image with the area in front of the screen as the target (subject side).

[0091] -Method of manufacturing organic EL display device- To manufacture the organic EL display device 1, first, an organic resin material is applied to the surface of the glass substrate 200 and baked to form the substrate layer 10. Next, the TFT layer 20, the light emitting element layer 60, and the sealing film 80 are formed in this order on the substrate layer 10 using a known film formation method such as CVD (Chemical Vapor Deposition), sputtering, or vacuum deposition, a known coating method such as spin coating or inkjet printing, or a known patterning technique such as photolithography.

[0092] Then, the glass substrate 200 is peeled off from the substrate layer 10 by, for example, irradiating the rear surface of the substrate layer 10 with laser light from the glass substrate 200 side. Next, a polarizing plate and a cover panel are attached to the surface of the sealing film 80. In addition, a protective film 11 is attached to the rear surface of the substrate layer 10. Furthermore, a wiring board CB is connected to the terminal portion TP to implement a display control circuit. Thereafter, the organic EL display device 1 is housed in a housing together with the camera 3, and the camera 3 is installed on the rear side of the organic EL display device 1 in a position overlapping with the second display area DA2 in a planar view.

[0093] In this manner, the organic EL display device 1 can be manufactured.

[0094] In the process of forming the TFT layer 20, after forming a plurality of TFTs 50 and capacitors 51 on the substrate layer 10 on the surface of the glass substrate 200, an acrylic or polyimide photosensitive resin or a photosensitive SOG material is applied by, for example, spin coating or slit coating. The applied film is then pre-baked, exposed to light, developed, and post-baked. As a result, a first planarization film 54 (e.g., approximately 0.5 μm to 3.0 μm thick) having a first contact hole Ha is formed, as shown in FIG.

[0095] Next, a titanium film is formed on the substrate on which the first planarization film 54 has been formed, for example, by sputtering. As a result, a first metal film 100 (e.g., approximately 100 nm to 500 nm thick) is formed, as shown in FIG. 11 . Here, to form the first metal film 100, a molybdenum film may be formed instead of a titanium film, or a titanium film, an aluminum film, and a titanium film may be formed in sequence. Subsequently, the first metal film 100 is patterned to form the lower connection line 40ra (see FIG. 12 ). The first metal film 100 is patterned by, for example, wet etching or dry etching using an etching solution appropriate for the metal material, such as a known titanium etching solution.

[0096] Next, a photosensitive acrylic or polyimide resin or a photosensitive SOG material is applied to the substrate on which the lower connection lines 40ra have been formed, for example, by spin coating or slit coating. The applied film is then pre-baked, exposed to light, developed, and post-baked. As a result, a second planarization film 56 (e.g., approximately 0.5 μm to 30 μm thick) having second contact holes Hb is formed, as shown in FIG.

[0097] Next, an indium tin oxide film is formed on the substrate on which the second planarization film 56 has been formed, for example, by sputtering. This forms a first transparent conductive film 102 (e.g., approximately 50 nm to 150 nm thick), as shown in FIG. 13 . Here, an indium zinc oxide film or an indium gallium zinc oxide film may be formed to form the first transparent conductive film 102. Subsequently, the first transparent conductive film 102 is patterned to form the intermediate connection line 40rb (see FIG. 14 ). The first transparent conductive film 102 is patterned, for example, by wet etching using an etchant appropriate for the transparent conductive material, such as a known ITO etchant.

[0098] Next, a photosensitive acrylic or polyimide resin or a photosensitive SOG material is applied to the substrate on which the intermediate connection line 40rb has been formed, for example, by spin coating or slit coating. The applied film is then pre-baked, exposed to light, developed, and pre-baked. As a result, a third planarization film 58 (e.g., approximately 0.5 μm to 3.0 μm thick) having a third contact hole Hc is formed, as shown in FIG.

[0099] Next, an indium tin oxide film is formed on the substrate on which the third planarization film 58 has been formed, for example, by sputtering. This forms a second transparent conductive film 104 (e.g., approximately 50 μm to 150 μm thick) as shown in FIG. 15 . Here, an indium zinc oxide film or an indium gallium zinc oxide film may be formed to form the second transparent conductive film 104. Subsequently, the second transparent conductive film 104 is patterned to form the upper connection line 40rc (transparent wiring layer TL1 and transparent conductive layer TL2) as shown in FIG. 16 . The second transparent conductive film 104 is patterned by, for example, wet etching using an etchant appropriate for the transparent conductive material, such as a known ITO etchant.

[0100] Next, the substrate on which the upper-layer connecting lines 40rc have been formed is subjected to an annealing treatment, for example, at a temperature of approximately 200°C to 250°C for approximately 30 to 120 minutes. This annealing treatment crystallizes the lower-layer connecting lines 40ra, the intermediate connecting lines 40rb, and the upper-layer connecting lines 40rc (the transparent wiring layer TL1 and the transparent conductive layer TL2). This improves the conductivity and light transmittance of the lower-layer connecting lines 40ra, the intermediate connecting lines 40rb, and the upper-layer connecting lines 40rc (the transparent wiring layer TL1 and the transparent conductive layer TL2). Furthermore, by being crystallized, the transparent wiring layer TL1 and the transparent conductive layer TL2 become resistant to the PAN-based etching solution used in the subsequent patterning of the pixel electrodes 61.

[0101] In this manner, the TFT layer 20 can be formed.

[0102] In the process of forming the light-emitting element layer 60, an indium tin oxide film 106a (e.g., approximately 5 nm to 100 nm thick), a silver film 106b (e.g., approximately 50 nm to 200 nm thick), and an indium tin oxide film 106c (e.g., approximately 5 nm to 100 nm thick) are deposited in this order on the substrate on which the upper-layer connecting lines 40rc have been formed, for example, by sputtering. This results in the formation of the second metal film 106, as shown in FIG. 17 . Here, to form the second metal film 106, an indium zinc oxide film or an indium gallium zinc oxide film may be deposited instead of the indium tin oxide films 106a and 106c. Furthermore, a silver alloy film, an aluminum film, or an aluminum alloy film may be deposited instead of the silver film 106b. Subsequently, the second metal film 106 is patterned to form the pixel electrode 61, as shown in FIG. 18 .

[0103] The second metal film 106 is patterned by wet etching. This wet etching uses a PAN-based etchant, a mixture of phosphoric acid, nitric acid, and acetic acid. At this time, the upper-layer connection lines 40rc (transparent wiring layer TL1) in the second display area DA2 are exposed to the PAN-based etchant. However, because the upper-layer connection lines 40rc (transparent wiring layer TL1) are crystallized in advance and have resistance, they are not corroded by the etchant or are resistant to corrosion, and can be left partially exposed from the pixel electrodes 61.

[0104] Next, as shown in Fig. 19, a polyimide-based photosensitive resin is applied onto the substrate on which the pixel electrodes 61 have been formed, for example, by spin coating or slit coating. The applied film 108 is then pre-baked, exposed to light, developed, and pre-baked. This results in the formation of an edge cover 75 having photospacers 77, as shown in Fig. 20. After that, an organic EL layer 62 and a common electrode 63 are sequentially formed on the substrate on which the edge cover 75 has been formed, using a known method.

[0105] In this manner, the light emitting element layer 60 can be formed.

[0106] Features of Embodiment 1 In the organic EL display device 1 of Embodiment 1, the connection lines 40r provided in the second display area DA2 include a transparent wiring layer TL1 (upper-layer connection lines 40rc) that is optically transparent. This increases the transmittance of external light received by the camera 3 in the second display area DA2. Furthermore, the pixel electrodes 61 in the second display area DA2 are provided on top of the transparent wiring layer TL1, but cover a portion of the outer edge of the transparent wiring layer TL1. In the portion of the outer edge of the transparent wiring layer TL1 that is covered by the pixel electrode 61, the alignment margin for each organic EL element 70 is determined by the margin M1 between the patterns of the pixel electrode 61 and the opening 76 in the edge cover 75. Therefore, it is not necessary to provide a margin between the patterns of the transparent wiring layer TL1 and the pixel electrode 61. This reduces the distance required between adjacent pixel electrodes 61 in the second display area DA2. This allows for higher resolution images to be displayed in the organic EL display device 1.

[0107] In the organic EL display device 1 of this embodiment 1, the pixel electrodes 61 in the first display region DA1 are provided overlapping the transparent conductive layer TL2, but cover the entire outer edge of the transparent conductive layer TL2. In the portion of the outer edge of the transparent conductive layer TL2 covered by the pixel electrodes 61, the alignment margin for each organic EL element 70 is determined by the margin M1 between the patterns of the pixel electrodes 61 and the openings 76 in the edge cover 75; therefore, it is not necessary to ensure a margin between the patterns of the transparent conductive layer TL2 and the pixel electrodes 61. This shortens the distance that must be ensured between adjacent pixel electrodes 61 in the first display region DA1. This allows for higher resolution images to be displayed in the organic EL display device 1.

[0108] In the organic EL display device 1 of this embodiment 1, the transparent wiring layer TL1 is formed of a crystallized transparent conductive material. This transparent conductive material has the property of being corroded by a predetermined etching solution before crystallization, but is resistant to corrosion by the etching solution after crystallization. When the predetermined etching solution is used to pattern a film or layer located above the transparent wiring layer TL1, such a transparent conductive material is suitable as a material for the transparent wiring layer TL1 because, if it is crystallized, it is resistant to corrosion even when exposed to the etching solution.

[0109] In the organic EL display device 1 of this embodiment 1, the transparent wiring layer TL1 is made of indium tin oxide (ITO), which exhibits good properties with respect to the above-mentioned etching solution and can therefore be used as a specific material for the transparent wiring layer TL1.

[0110] In the organic EL display device 1 of this embodiment 1, the pixel electrode 61 has a layered structure consisting of a first transparent electrode layer 61a, a reflective electrode layer 61b, and a second transparent electrode layer 61c. The transparent wiring layer TL1 is resistant to corrosion by the PAN-based etching solution used to pattern the first transparent electrode layer 61a, the reflective electrode layer 61b, and the second transparent electrode layer 61c. This allows the first transparent electrode layer 61a, the reflective electrode layer 61b, and the second transparent electrode layer 61c to be etched simultaneously while leaving the transparent wiring layer TL1. This reduces the number of processes required to form the pixel electrode 61. This is advantageous for reducing the cost of the organic EL display device 1.

[0111] In the organic EL display device 1 of this embodiment 1, the connection lines 40r are configured to include intermediate connection lines 40rb in addition to upper-layer connection lines 40ra. The upper-layer connection lines 40ra and the intermediate connection lines 40rb are formed on different layers. This allows the layout of the upper-layer connection lines 40ra and the intermediate connection lines 40rb to be designed so that they extend and intersect with each other in a planar view. The intermediate connection lines 40rb are also optically transparent. This is advantageous for improving the transmittance of external light received by the camera 3 in the second display area DA2.

[0112] In the organic EL display device 1 of this embodiment 1, the plurality of organic EL elements 70 in the second display area DA2 are arranged in the light-emitting element area EA, and the plurality of pixel circuits PC that control the light emission of the organic EL elements 70 in the light-emitting element area EA are arranged around the light-emitting element area EA. This eliminates the need to provide pixel circuits PC in the light-emitting element area EA. This allows light to be suitably transmitted from the front side to the back side of the display area DA in the light-emitting element area EA, ensuring that external light reaches the camera 3. This is advantageous for the camera 3 to function properly.

[0113] In the organic EL display device 1 of this embodiment 1, a pixel circuit PC is provided for each set of organic EL elements 70, each set consisting of two or more organic EL elements 70. The light emission of the two or more organic EL elements 70 in the set is controlled by a common pixel circuit PC. This allows the number of pixel circuits PC to be reduced relative to the number of organic EL elements 70 in the second display area DA2. This is advantageous for increasing the transmittance of external light received by the camera 3 in the second display area DA2.

[0114] Second Embodiment The organic EL display device 1 of the second embodiment differs from that of the first embodiment in the connection configuration between the pixel electrodes 61 and the TFTs 50 in the first display area DA1. In the present embodiment, the organic EL display device 1 is configured in the same manner as in the first embodiment, except for the connection configuration between the pixel electrodes 61 and the TFTs 50 in the first display area DA1.

[0115] 21 , in the organic EL display device 1 of the second embodiment, each pixel electrode 61 in the first display region DA1 is connected to an intermediate connection line 40rb via a third contact hole Hc formed in the third planarization film 58. The upper-layer connection line 40rc is provided in the second display region DA2 (see FIGS. 8 and 9 ), as in the first embodiment, but is not provided in the first display region DA1. Each pixel electrode 61 in the first display region DA1 is entirely formed on the surface of the third planarization film 58 and is directly connected to the intermediate connection line 40rb.

[0116] To manufacture the organic EL display device 1 of this embodiment 2, when patterning the second transparent conductive film 104 in the step of forming the TFT layer 20, the upper-layer connecting lines 40rc are formed only in the second display region DA2, and the second transparent conductive film 104 is removed in the first display region DA1, as shown in Fig. 22. In the subsequent step of forming the light-emitting element layer 60, the second metal film 106 is formed in the same manner as in embodiment 1 above, as shown in Fig. 23. Then, the second metal film 106 is patterned to form pixel electrodes 61, as in embodiment 1 above.

[0117] Features of Embodiment 2 In the organic EL display device 1 of Embodiment 2, the upper-layer connecting lines 40rc are not provided in the first display area DA1. This allows the structure of each subpixel SP in the first display area DA1 to be similar to that of an organic EL display device that does not have a second display area DA2. This is advantageous for increasing the resolution of displayed images in the organic EL display device 1 with an in-camera.

[0118] Third Embodiment The organic EL display device 1 of the third embodiment differs from that of the first embodiment in the connection configuration between the pixel electrodes 61 and the TFTs 50 in the first display area DA1. In the present embodiment, the organic EL display device 1 is configured in the same manner as in the first embodiment, except for the connection configuration between the pixel electrodes 61 and the TFTs 50 in the first display area DA1.

[0119] 24 , in the organic EL display device 1 of the third embodiment, each pixel electrode 61 in the first display region DA1 is connected to a lower-layer connecting line 40ra via a third contact wheel Hc formed in the third planarization film 58. The upper-layer connecting line 40rc, the second planarization film 56, and the intermediate connecting line 40rb are provided in the second display region DA2 as in the first embodiment (see FIGS. 8 and 9 ), but are not provided in the first display region DA1. The thickness of the third planarization film 58 in the first display region DA1 is equal to the thickness of the laminated film of the second planarization film 56 and the third planarization film 58 in the second display region DA2.

[0120] To manufacture the organic EL display device 1 of this third embodiment, as shown in Fig. 25, when forming the second planarization film 56 in the process of forming the TFT layer 20, the second planarization film 56 is formed only in the second display region DA2, and the coating film is removed in the first display region DA1. Then, as shown in Fig. 26, the third planarization film 58 is formed so that the surface height is approximately the same in the first display region DA1 and the second display region DA2. At this time, if it is necessary to adjust the thickness of the third planarization film 58 between the first display region DA1 and the second display region DA2, a gray-tone mask or a half-tone mask may be used when exposing the coating film.

[0121] - Features of Embodiment 3 - In the organic EL display device 1 of Embodiment 3, the upper-layer connecting line 40rc, the second planarization film 56, and the intermediate connecting line 40rb are not provided in the first display area DA1. This allows the structure of each sub-pixel in the first display area to be the same as that of an organic EL display device that does not have the second display area DA2. This is advantageous for increasing the resolution of the displayed image in the organic EL display device 1 with an in-camera.

[0122] Other Embodiments In the first embodiment, each pixel electrode 61 in the first display region DA1 covers the entire transparent conductive layer TL2 and covers the entire outer edge of the transparent conductive layer TL2, but this is not limited thereto. Each pixel electrode 61 in the first display region DA1 may cover only a part of the outer edge of the transparent conductive layer TL2.

[0123] In the third embodiment, the upper-layer connecting lines 40rc (transparent conductive layer TL2) are not provided in the first display area DA1, but this is not limiting. In the organic EL display device 1 of the third embodiment, the upper-layer connecting lines 40rc (transparent conductive layer TL2) may also be provided in the first display area DA1, as in the first embodiment.

[0124] In the first embodiment, the transparent conductive layer TL2 constitutes the upper connecting line 40rc and is included in the TFT layer 20, but this is not limiting. The transparent conductive layer TL2 may be considered as part of the pixel electrode 61 (i.e., included in the light emitting element layer 60).

[0125] In the above-described first to third embodiments, each pixel electrode 61 is formed by sequentially stacking the first transparent electrode layer 61 a, the reflective electrode layer 61 b, and the second transparent electrode layer 61 c, but this is not limiting. Each pixel electrode 61 may be formed by two or less conductive layers, or by four or more conductive layers.

[0126] In the above-described first to third embodiments, the organic EL elements 70 provided in the light-emitting element area EA are grouped into two sets, and each set is connected to each other via the upper-layer connecting wire 40rc. However, this is not limiting. The organic EL elements 70 in the light-emitting element area EA may be grouped into three or more sets, and each set may be connected to each other via the upper-layer connecting wire 40rc.

[0127] Furthermore, the organic EL elements 70 provided in the light-emitting element area EA do not have to be grouped into a set of two or more. That is, the organic EL elements 70 in the light-emitting element area EA may not be connected to each other and may be controlled individually. In this case, a separate pixel circuit PC is provided for each organic EL element 70 in the circuit arrangement area CA, and each organic EL element 70 is connected to a separate pixel circuit PC via a connection line 40r.

[0128] In the above-described first to third embodiments, the organic EL layer 62 is provided individually for each subpixel SP, but this is not limiting. The organic EL layer 62 may be provided as a single layer common to a plurality of subpixels SP. In this case, the organic EL display device 1 may be provided with a color filter or the like to express color tones in each subpixel SP.

[0129] In the above-described first to third embodiments, each pixel PX is configured with sub-pixels SP of three colors, but this is not limited to this. The sub-pixels SP that configure each pixel PX may be of four or more colors. Furthermore, the three sub-pixels SP that configure each pixel PX are arranged in a stripe arrangement, but this is not limited to this. The arrangement of the multiple sub-pixels PS may be another arrangement, such as a pentile arrangement.

[0130] In the above-described first to third embodiments, the plurality of TFTs 50 constituting the pixel circuit PC are three: the first TFT 50A, the second TFT 50B, and the third TFT 50C. However, this is not limited to this. The plurality of TFTs 50 constituting the pixel circuit PC may be two or less, or may be four or more. Furthermore, each TFT 50 may be configured as a bottom gate type.

[0131] In the above-described first to third embodiments, the pixel electrode 61 is an anode and the common electrode 63 is a cathode, but this is not limiting. The organic EL display device 1 may be configured so that the pixel electrode 61 functions as a cathode and the common electrode 63 functions as an anode. In this case, the organic EL layer 62 has an inverted stacked structure.

[0132] In the above-described first to third embodiments, the organic EL layer 62 has a five-layer structure including a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer, but is not limited to this. The organic EL layer 62 may have a three-layer structure including a hole injection / transport layer, a light-emitting layer, and an electron injection / transport layer, or any other laminated structure may be employed.

[0133] In the above-described first to third embodiments, the substrate of the organic EL display device 1 is a substrate layer, but this is not limiting. The substrate may be made of any material, such as a plastic substrate made of polyethylene terephthalate (PET) or a glass substrate, as long as it is optically transparent.

[0134] In the above-described first to third embodiments, the camera 3 is exemplified as an electronic component that can be combined with the organic EL display device 1, but this is not limiting. The electronic component may be any other electronic component, such as a fingerprint sensor, a face authentication sensor, or a brightness sensor, as long as it is arranged at a position that overlaps with the second display area DA2 on the rear side of the organic EL display device 1 and utilizes light that has passed through the display area DA2.

[0135] In the above-described first to third embodiments, an organic EL display device 1 has been illustrated as an example of a display device according to the present disclosure, but the present disclosure is not limited thereto. The technology of the present disclosure can be applied to a display device including a plurality of light-emitting elements driven by a current. An example of such a display device is a display device including QLEDs (Quantum-dot Light Emitting Diodes), which are light-emitting elements using a quantum dot-containing layer. The technology of the present disclosure can also be applied to liquid crystal display devices and plasma display devices.

[0136] As described above, preferred embodiments have been described as examples of the technology of the present disclosure. However, the technology of the present disclosure is not limited to these, and can be applied to embodiments in which appropriate modifications, substitutions, additions, omissions, etc. are made. It will be understood by those skilled in the art that various modifications are possible to the above-described embodiments without departing from the spirit of the technology of the present disclosure, and that such modifications also fall within the scope of the technology of the present disclosure.

[0137] As described above, the present disclosure is useful for display devices.

[0138] CL: Conductive laminate DA: Display area DA1: First display area DA2: Second display area EA: Light-emitting element area PC: Pixel circuit PA1, PB1: First area PA2, PB2: Second area SP: Subpixel TL1: Transparent wiring layer TL2: Transparent conductive layer 1: Organic EL display device (display device) 3: Camera (electronic component) 10: Substrate layer (substrate) 20: TFT layer (thin film transistor layer) 40r: Connection line 40rb: Intermediate connection line (second connection line) 40rc: Upper layer connection line (first connection line) 50: TFT (thin film transistor) 60: Light-emitting element layer 61: Pixel electrode 61a: First transparent electrode layer 61b: Reflective electrode layer 61c: Second transparent electrode layer 70: Organic EL element (light-emitting element) 75: Edge cover 76: Opening

Claims

1. A substrate; a thin film transistor layer provided on the substrate; a light-emitting element layer provided on the thin film transistor layer, a plurality of thin film transistors are provided in the thin film transistor layer, and a plurality of light emitting elements are provided in the light emitting element layer, each corresponding to a plurality of sub-pixels forming a display area; A display device in which an electronic component that utilizes light is disposed on the back side of the substrate at a position that overlaps the display area in a plan view, the display area includes a first display area and a second display area that is provided inside the first display area and transmits light used by the electronic component; a connection line electrically connecting the thin film transistor and the light emitting element is provided in the second display region; the connecting line includes a transparent wiring layer having optical transparency, a pixel electrode constituting the light-emitting element in the first display region has a first region provided to overlap a transparent conductive layer formed in the same layer as the transparent wiring layer and made of the same material, and a second region formed in the same layer as the transparent conductive layer; The pixel electrode of the first display region covers the entire outer edge of the transparent conductive layer.

2. 2. The display device according to claim 1, the light-emitting element layer includes an edge cover provided to cover an outer edge of the pixel electrode, a periphery of the opening in the edge cover that partially exposes the pixel electrode is surrounded by an outer edge of the pixel electrode in a plan view.

3. 3. The display device according to claim 1, the transparent wiring layer is formed of a crystallized transparent conductive material, The transparent conductive material has a property that it is corroded by a predetermined etching solution before being crystallized, but is less corroded by the etching solution after being crystallized.

4. 4. The display device according to claim 3, The display device, wherein the transparent conductive material is indium tin oxide.

5. 4. The display device according to claim 3, the pixel electrode is composed of a conductive laminate in which a first transparent electrode layer having light transmissivity, a reflective electrode layer having light reflectivity, and a second transparent electrode layer having light transmissivity are laminated in this order; The display device, wherein the first transparent electrode layer, the reflective electrode layer, and the second transparent electrode layer are all formed from conductive materials that have a property of being etched by the etching solution.

6. 3. The display device according to claim 1, the connection lines include a first connection line electrically connected to the pixel electrode and a second connection line electrically connecting the first connection line and the thin film transistor; the first connection line is formed by the transparent wiring layer, The display device, wherein the second connection line is formed in a layer different from that of the first connection line and has optical transparency.

7. 3. The display device according to claim 1, the second display region includes a light emitting element region in which a plurality of the light emitting elements are arranged, A display device, wherein a pixel circuit including the thin film transistor and controlling light emission of the light emitting element arranged in the light emitting element region is provided around the light emitting element region.

8. 8. The display device according to claim 7, In the light-emitting element region, a plurality of sets of the light-emitting elements are arranged, each set consisting of two or more light-emitting elements, The pixel circuit is provided for each set of the light-emitting elements, and commonly controls light emission of two or more of the light-emitting elements that make up the set.

9. 3. The display device according to claim 1, The display device, wherein the electronic component is a camera.

10. 3. The display device according to claim 1, The display device, wherein the light-emitting element is an organic electroluminescence element.