Semiconductor laser device, light source module, and method for manufacturing light source module

Abstract

Provided is a semiconductor laser device (1) comprising a semiconductor laser element (200) that emits a laser beam, and a lens unit (100) that includes a first cylindrical lens (110) and an installation plane, wherein: the semiconductor laser element (200) includes an active layer; the first cylindrical lens (110) reduces the spread angle of a laser beam in the fast axis direction when the laser beam enters said lens; the installation plane is fixed to a first installation target plane; the generatrix of the first cylindrical lens (110) is inclined with respect to the first installation target plane, and the angle θ formed between the generatrix and the active layer is such that |θ| < 22.5°.

Description

Semiconductor laser device, light source module, and method of manufacturing the light source module

[0001] The present disclosure relates to a semiconductor laser device, a light source module, and a method for manufacturing a light source module.

[0002] Japanese Patent Application Laid-Open No. 2003-124222 discloses a semiconductor laser device including a semiconductor laser element and a collimator lens that collimates laser light emitted from the semiconductor laser element in the fast axis direction.

[0003] JP 2014-170888 A

[0004] However, in the semiconductor laser device disclosed in Patent Document 1, the position adjustment accuracy of the collimator lens in the fast axis direction of the semiconductor laser device is low, so when a light source module includes multiple semiconductor laser devices, the positional misalignment between the laser light and an object such as an optical fiber becomes large, resulting in many semiconductor laser devices with low coupling efficiency between the laser light and the object.If many semiconductor laser devices with low coupling efficiency between the laser light and the object occur, the coupling efficiency of the light source module will decrease.

[0005] Therefore, an object of the present disclosure is to easily increase the coupling efficiency of a light source module.

[0006] In order to achieve the above object, a semiconductor laser device according to one aspect of the present disclosure includes: a semiconductor laser element that emits laser light; and a lens unit having a first cylindrical lens and an installation plane, wherein the semiconductor laser element has an active layer; the first cylindrical lens receives the laser light and reduces a divergence angle of the laser light in a fast axis direction; the installation plane is fixed to a first installation plane; a generatrix of the first cylindrical lens is inclined with respect to the first installation plane; and an angle θ between the generatrix and the active layer is |θ|<22.5°.

[0007] Furthermore, a semiconductor laser device according to one aspect of the present disclosure includes a semiconductor laser element that emits laser light, and a lens unit having a first cylindrical lens and an installation plane, wherein the semiconductor laser element has an active layer, the first cylindrical lens receives the laser light and reduces a divergence angle of the laser light in a fast axis direction, the installation plane is fixed to a first installation plane, a generatrix of the first cylindrical lens is inclined with respect to the installation plane, and an angle θ between the generatrix and the active layer is |θ|<22.5°.

[0008] Furthermore, a light source module according to one aspect of the present disclosure includes a plurality of the semiconductor laser devices described above, and the laser light emitted from the semiconductor laser elements included in each of the plurality of semiconductor laser devices is combined.

[0009] Furthermore, a manufacturing method of a light source module according to one aspect of the present disclosure is a manufacturing method of a light source module, the light source module including a semiconductor laser element that emits laser light, a first installation surface, and a lens unit having a first cylindrical lens and an installation surface, the semiconductor laser element having an active layer, the first cylindrical lens reducing a divergence angle of the laser light in a fast axis direction, the installation surface being fixed to the first installation surface, the manufacturing method including: an arrangement step of arranging the lens unit on the first installation surface so that a generatrix of the first cylindrical lens is inclined with respect to the first installation surface; an alignment step of causing the laser light emitted from the semiconductor laser element to be incident on the first cylindrical lens and moving the arranged lens unit in two directions parallel to the first installation surface and perpendicular to each other; and a fixing step of fixing the moved lens unit to the first installation surface, wherein in the arrangement step, an angle θ formed between the generatrix and the active layer is |θ|<22.5°.

[0010] Furthermore, a method for manufacturing a light source module according to one aspect of the present disclosure is a method for manufacturing a light source module, the light source module including a semiconductor laser element that emits laser light, a first installation surface, and a lens unit having a first cylindrical lens and an installation surface, the semiconductor laser element having an active layer, the first cylindrical lens reducing a divergence angle of the laser light in a fast axis direction, the installation surface being fixed to the first installation surface, the manufacturing method including: an arrangement step of arranging the lens unit on the first installation surface so that a generatrix of the first cylindrical lens is inclined with respect to the installation surface; an alignment step of causing the laser light emitted from the semiconductor laser element to be incident on the first cylindrical lens and moving the arranged lens unit in two directions parallel to the first installation surface and perpendicular to each other; and a fixing step of fixing the moved lens unit to the first installation surface, wherein in the arrangement step, an angle θ formed between the generatrix and the active layer is |θ|<22.5°.

[0011] According to the present disclosure, the coupling efficiency of the light source module can be easily increased.

[0012] FIG. 1 is a perspective view showing the overall configuration of a light source module according to a first embodiment. FIG. 2 is a perspective view showing the configuration of a semiconductor laser device according to the first embodiment. FIG. 3 is a front view showing the configuration of the semiconductor laser device according to the first embodiment. FIG. 4 is an exploded perspective view of a lens portion according to the first embodiment. FIG. 5 is a cross-sectional view showing a cut surface of the semiconductor laser device taken along line V-V in FIG. 3. FIG. 6 is an enlarged cross-sectional view of the light-emitting region and the first cylindrical lens in FIG. 5. FIG. 7 is a schematic diagram showing steps in a method for manufacturing the vicinity of the semiconductor laser device of a light source module according to the first embodiment. FIG. 8 is a schematic diagram showing steps in a method for manufacturing the vicinity of the semiconductor laser device of a light source module according to the first embodiment. FIG. 9 is a schematic diagram showing steps in a method for manufacturing the vicinity of the semiconductor laser device of a light source module according to the first embodiment. FIG. 10 is a schematic diagram showing steps in a method for manufacturing the vicinity of the semiconductor laser device of a light source module according to the first embodiment. FIG. 11 is a schematic diagram showing steps in a method for manufacturing the vicinity of the semiconductor laser device of a light source module according to the first embodiment. FIG. 12 is a diagram showing the relationship between the angle β and the z-axis movement amount Δz and the x-axis movement amount Δx of the first cylindrical lens according to the first embodiment. FIG. 13 is a front view showing an example in which the lens unit moves in the x-axis direction in the alignment step according to the first embodiment. FIG. 14 is a diagram showing the relationship between the angle β, the z-axis movement amount Δz, and the x-axis movement amount Δx according to the first embodiment. FIG. 15 is a cross-sectional view showing a semiconductor laser device according to a comparative example. FIG. 16 is a diagram showing the relationship between the change in the z-axis position of the FAC lens and the coupling efficiency in a light source module including a semiconductor laser device according to the comparative example. FIG. 17 is a table explaining the simulation conditions of FIG. 16. FIG. 18 is a diagram showing the results of a simulation of the light intensity distribution when the angle φ is 0° and the angle θ is 2° according to the first embodiment. FIG. 19A is a diagram showing the results of a simulation of the change in coupling efficiency when the first cylindrical lens is moved along the installation plane in a semiconductor laser device according to the first embodiment in which the first cylindrical lens is inclined with respect to the installation plane.19B is a diagram showing the results of a simulation calculation of the maximum value of coupling efficiency when the angle θ according to the first embodiment is changed. FIG. 20 is a front view showing the configuration of a semiconductor laser device according to a first modification of the first embodiment. FIG. 21 is a front view showing the configuration of a semiconductor laser device according to a second modification of the first embodiment. FIG. 22 is a diagram showing the shape of a first cylindrical lens according to the second modification of the first embodiment. FIG. 23 is an exploded perspective view of a lens unit according to the second modification of the first embodiment. FIG. 24 is a front view showing the configuration of a semiconductor laser device according to a third modification of the first embodiment. FIG. 25 is a front view showing the configuration of a semiconductor laser device according to a fourth modification of the first embodiment. FIG. 26 is an enlarged front view of the periphery of the second support member in region XXVI of FIG. 25. FIG. 27 is a front view of a semiconductor laser device according to a study example. FIG. 28 is a perspective view showing the overall configuration of a light source module according to the second embodiment. FIG. 29 is a perspective view showing the configuration of a semiconductor laser device according to the second embodiment. FIG. 30 is a perspective view of a lens unit according to the second embodiment. FIG. 31 is a schematic view showing a process of a manufacturing method for the vicinity of the semiconductor laser device of the light source module according to the second embodiment. FIG. 32 is a schematic diagram showing steps in a method for manufacturing the vicinity of the semiconductor laser device of the light source module according to the second embodiment. FIG. 33 is a schematic diagram showing steps in a method for manufacturing the vicinity of the semiconductor laser device of the light source module according to the second embodiment. FIG. 34 is a schematic diagram showing steps in a method for manufacturing the vicinity of the semiconductor laser device of the light source module according to the second embodiment. FIG. 35 is a front view showing the configuration of a semiconductor laser device according to a first modification of the second embodiment. FIG. 36 is a front view showing the configuration of a semiconductor laser device according to a second modification of the second embodiment. FIG. 37 is a front view showing the configuration of a semiconductor laser device according to a third modification of the second embodiment. FIG. 38 is a perspective view showing a part of a light source module according to the third embodiment. FIG. 39 is a front view of a first cylindrical lens and a second cylindrical lens according to the third embodiment. FIG. 40 is a diagram showing the relationship between the angle θ and the angle α and the coupling efficiency according to the third embodiment. FIG. 41A is a diagram showing a table explaining the simulation conditions of FIG. 40. FIG. 41B is a diagram showing a change in coupling efficiency when the lens unit is moved in the x-axis direction in the light source module according to the third embodiment.FIG. 42 is a perspective view showing a portion of a light source module according to a modification of the third embodiment. FIG. 43 is a perspective view showing a semiconductor laser device according to the fourth embodiment. FIG. 44 is an exploded front view of a lens unit and a fixing member according to the fourth embodiment. FIG. 45 is a schematic diagram showing steps in a method for manufacturing the vicinity of the semiconductor laser device of the light source module according to the fourth embodiment. FIG. 46 is a schematic diagram showing steps in a method for manufacturing the vicinity of the semiconductor laser device of the light source module according to the fourth embodiment. FIG. 47 is a schematic diagram showing steps in a method for manufacturing the vicinity of the semiconductor laser device of the light source module according to the fourth embodiment. FIG. 48A is a schematic diagram showing steps in a method for manufacturing the vicinity of the semiconductor laser device of the light source module according to the fourth embodiment. FIG. 48B is a diagram showing changes in coupling efficiency when the lens unit moves in the x-axis direction along the installation plane for a light source module according to the fourth embodiment under the condition No. 1 in FIG. 17 when the angle β is 0°, 0.5°, 2°, and 5°. FIG. 49 is a front view showing the configuration of a semiconductor laser device according to a first modification of the fourth embodiment. FIG. 50 is a schematic diagram showing steps in a method for manufacturing the vicinity of the semiconductor laser device of a light source module according to Modification 1 of Embodiment 4. FIG. 51 is a schematic diagram showing steps in a method for manufacturing the vicinity of the semiconductor laser device of a light source module according to Modification 1 of Embodiment 4. FIG. 52 is a schematic diagram showing steps in a method for manufacturing the vicinity of the semiconductor laser device of a light source module according to Modification 1 of Embodiment 4. FIG. 53 is a schematic diagram showing steps in a method for manufacturing the vicinity of the semiconductor laser device of a light source module according to Modification 1 of Embodiment 4. FIG. 54 is a top view showing the configuration of a semiconductor laser device according to Modification 2 of Embodiment 4. FIG. 55 is a front view showing the configuration of a semiconductor laser device according to Modification 2 of Embodiment 4. FIG. 56 is a front view showing the configuration of a semiconductor laser device according to Embodiment 5. FIG. 57 is a side view showing the configuration of a semiconductor laser device according to Embodiment 5. FIG. 58 is a top view showing the configuration of a semiconductor laser device according to Embodiment 5. FIG. 59 is a perspective view showing the overall configuration of a light source module according to Embodiment 6. FIG. 60 is a perspective view of a semiconductor laser device included in a light source module according to Embodiment 6. FIG. 61 is a side view of the semiconductor laser device according to Embodiment 6. FIG. 62 is a front view showing a method for manufacturing a first cylindrical lens according to the sixth embodiment.

[0013] Semiconductor laser devices according to embodiments of the present disclosure will be described in detail below with reference to the drawings. Note that each of the embodiments described below represents a specific example of the present disclosure. Therefore, the numerical values, shapes, materials, components, component arrangements and connection forms, steps, and step orders shown in the following embodiments are merely examples and are not intended to limit the present disclosure.

[0014] Furthermore, each figure is a schematic diagram and is not necessarily an exact illustration. Therefore, for example, the scales of the figures do not necessarily match. Furthermore, in each figure, substantially the same components are given the same reference numerals, and redundant explanations are omitted or simplified.

[0015] Furthermore, in this specification, terms indicating the relationship between elements, such as "equal," terms indicating the shape of elements, such as "flat" or "rectangular," and numerical ranges are not expressions that only express a strict meaning, but are expressions that also include a substantially equivalent range, for example, a difference of about a few percent.

[0016] Furthermore, in this specification, the terms "above" and "below" do not refer to the upward direction (vertically upward) and downward direction (vertically downward) in absolute spatial recognition, but are used as terms defined by a relative positional relationship based on the stacking order in a stacked configuration. Furthermore, the terms "above" and "below" are applied not only to a case where two components are arranged with a gap between them and another component exists between the two components, but also to a case where two components are arranged closely together and the two components are in contact with each other.

[0017] The x-axis, y-axis, and z-axis represent the three axes of a three-dimensional Cartesian coordinate system relating to the semiconductor laser element. The positive direction of the z-axis may be referred to as "upward," and the negative direction of the z-axis may be referred to as "downward." The upper surface may be referred to as "top surface," and the lower surface may be referred to as "bottom surface."

[0018] In each embodiment and each modified example, the direction of travel along the optical axis of the laser light immediately after being emitted from the semiconductor laser element is defined as the negative y-axis direction, the direction parallel to the fast axis of the laser light immediately after being emitted from the semiconductor laser element is defined as the z-axis direction, and the direction parallel to the slow axis of the laser light immediately after being emitted from the semiconductor laser element is defined as the x-axis direction.

[0019] In the embodiments described below, "top view" means that the semiconductor laser device is viewed from the positive side of the z-axis, and the view in this state is called a top view. "front view" means that the semiconductor laser device is viewed from the negative side of the y-axis, and the view in this state is called a front view. "side view" means that the semiconductor laser device is viewed from the positive or negative side of the x-axis, and the view in this state is called a side view.

[0020] First Embodiment [Configuration] First, the configuration of a light source module 10 according to a first embodiment will be described with reference to FIG.

[0021] FIG. 1 is a perspective view showing the overall configuration of a light source module 10 according to the present embodiment.

[0022] 1 , the light source module 10 includes a case 501, a plurality of semiconductor laser devices (here, semiconductor laser devices 1, 2, 3, 4, 5, and 6), a plurality of slow-axis collimator lenses 600 (SAC lenses 600), a plurality of reflecting mirrors 700, a condenser lens 800, an optical fiber 550, and a pair of lead pins 552. The optical fiber 550 has a core 550a that guides the laser light. The light source module 10 also includes a boot 551. The light source module 10 also includes a staircase base 510.

[0023] The light source module 10 is a module that can spatially combine laser beams emitted from a plurality of semiconductor laser devices using an optical system and emit the combined laser beams. The combined laser beams are incident on a core 550a, which is an object, within the light source module 10, and the laser beams propagate through an optical fiber 550 and are emitted from the light source module 10 to the outside. In other words, the incidence of the laser beams on the core 550a at this time is called combining. The light source module 10 may also be a module that can combine laser beams emitted from a plurality of semiconductor laser devices using an optical system and emit the combined laser beams. Note that in FIG. 1 and subsequent figures, it is assumed that the light intensity of the laser beams is 1 / (e ２ ) are indicated by dashed lines, which represent the spread of the laser light.

[0024] The case 501 has a base 502, a side wall 503, and a lid (not shown).

[0025] The sidewall 503 is disposed perpendicular to the base 502 of the case 501. The sidewall 503 surrounds a plurality of semiconductor laser devices and the like. A pair of lead pins 552 are inserted into the sidewall 503, electrically connecting the outside and the inside of the case 501. The sidewall 503 has a frame-like and rectangular shape in a plan view and is made of, for example, Cu, a Cu alloy, an Fe—Ni—Co alloy, or Al. The base 502 is made of, for example, Cu, a Cu alloy, Al, or a ceramic with high thermal conductivity (e.g., AlN or BeO). The lid is a member that covers the top of the case 501 and is made of, for example, an inorganic material such as a metal or ceramic material. The lid is rectangular in a plan view and covers the entire top surface of the sidewall 503.

[0026] The case 501 has a space for accommodating the semiconductor laser devices 1 to 6. The space for accommodating the semiconductor laser devices 1 to 6 is hermetically sealed, and the case 501 corresponds to an airtight package that hermetically seals the semiconductor laser devices 1 to 6.

[0027] A staircase base 510 having multiple staircase-like stages is provided within the case 501. In the present embodiment, the staircase base 510 having multiple staircase-like stages is provided, but this is not limiting, and a base that is not staircase-like may also be used. The multiple stages include a first stage 511, a second stage 512, a third stage 513, a fourth stage 514, a fifth stage 515, and a sixth stage 516. Each of the first to sixth stages 511 to 516 has a first step and a second step. For example, the first stage 511 has a first step 511a and a second step 511b. In each of the first to sixth stages 511 to 516, the second step is located on the positive side of the z-axis relative to the first step, i.e., is located higher. The z-axis position of each first stage is located on the positive side, and the z-axis position of each second stage is located on the positive side, in the order of the first stage 511, the second stage 512, the third stage 513, the fourth stage 514, the fifth stage 515, and the sixth stage 516. Each of the multiple first stages and each of the multiple second stages is a plane parallel to the xy plane.

[0028] In this embodiment, each of the multiple semiconductor laser devices is located on the second stage of each of the multiple stages. The multiple semiconductor laser devices are devices that convert power input to a pair of lead pins 552 and emit laser light. In this embodiment, six semiconductor laser devices are provided. For ease of identification, the six semiconductor laser devices may be referred to as semiconductor laser device 1, semiconductor laser device 2, semiconductor laser device 3, semiconductor laser device 4, semiconductor laser device 5, and semiconductor laser device 6. The multiple semiconductor laser devices are arranged side by side in the x-axis direction. Although the multiple semiconductor laser devices each have the same configuration, only semiconductor laser device 1 will be described here.

[0029] Fig. 2 is a perspective view showing the configuration of the semiconductor laser device 1 according to the present embodiment. Fig. 3 is a front view showing the configuration of the semiconductor laser device 1 according to the present embodiment.

[0030] The semiconductor laser device 1 includes a laser unit 20 and a lens section 100. The laser unit 20 includes a semiconductor laser element 200, a first bonding member 240, a submount 230, and a second bonding member 233. In this embodiment, the submount 230 includes a base material 236, a first electrode 210, a second electrode 220, and two base layers 232. The lens section 100 is fixed to the submount 230 by the second bonding member 233. The semiconductor laser device 1 is installed on the second stage 511b. The components included in the semiconductor laser device 1 will be described below.

[0031] The submount 230 is a flat-plate-shaped mounting base on which the semiconductor laser element 200 is mounted. The submount 230 has a first upper surface 231, which is the upper surface of the flat plate. In this embodiment, the first upper surface 231 is a plane parallel to the xy plane. On the first upper surface 231 side of the submount 230, a first electrode 210, a second electrode 220, and two base layers 232, each made of a patterned metal layer, are arranged insulated from each other. In other words, the upper surfaces of the first electrode 210, the second electrode 220, and the two base layers 232 are flush with each other, forming the first upper surface 231 of the submount. In addition, a first bonding member 240 is arranged above the first electrode 210. The semiconductor laser element 200 is installed above the first upper surface 231, more specifically, above the first bonding member 240.

[0032] The base material 236 of the submount 230 is made of an insulating material such as a crystal, ceramic, or the like, such as AlN or SiC. The first electrode 210, the second electrode 220, and the two underlayers 232 are made of one or more metal films, such as Ni, Cu, Pt, and Au. The first bonding member 240 is made of an inorganic material, such as a solder material, such as AuSn or SnAgCu.

[0033] The first electrode 210 is electrically connected to the semiconductor laser element 200 by a metal wire (not shown).

[0034] The first electrode 210 and the second electrode 220 are electrically connected to the lead pins 552 and supply power to the semiconductor laser device 200 .

[0035] The semiconductor laser device 200 is a laser device including a semiconductor laminated film and an optical waveguide formed on a semiconductor substrate. The semiconductor laminated film includes an active layer, that is, the semiconductor laser device 200 includes an active layer.

[0036] The semiconductor laser element 200 has a rectangular shape that is long in the waveguiding direction of the optical waveguide. The width (width in the x-axis direction) of the semiconductor laser element 200 is, for example, 100 μm or more and 1 mm or less, and the length (length in the y-axis direction) is, for example, 500 μm or more and 10 mm or less. The width (width in the x-axis direction) of the optical waveguide is, for example, 5 μm or more and 500 μm or less, and the semiconductor laser element 200 is a multi-transverse mode laser. The length (length in the y-axis direction) of the optical waveguide is the same value as the length of the semiconductor laser element 200. Of the active layer included in the semiconductor laser element 200, a region that emits laser light L1 is the light-emitting region 201. The size of the light-emitting region 201 is such that the width in the stacking direction of the semiconductor laminated film is the same value as the width of the active layer, and the width in the direction parallel to the stacking plane of the semiconductor laminated film is the same value as the width of the optical waveguide.

[0037] The semiconductor laser element 200 emits laser light L1 having a predetermined wavelength and a predetermined divergence angle. More specifically, the semiconductor laser element 200 converts power input from the outside to an optical waveguide into stimulated emission light such as laser light L1 and emits the light from a light-emitting region 201, which is one end of the optical waveguide. In this case, the fast axis of the laser light L1 is an axis in the stacking direction of the semiconductor laminated film of the semiconductor laser element 200. Furthermore, the slow axis, which is orthogonal to the fast axis, is an axis parallel to the stacking plane of the semiconductor laminated film.

[0038] The semiconductor laser element 200 can change the wavelength of the emitted laser light L1 depending on the semiconductor material of the semiconductor laser element 200. For example, by using a nitride-based semiconductor laser element containing nitrides of Al, Ga, and In as its main components, the semiconductor laser element 200 can emit laser light L1 having a peak wavelength of, for example, 350 nm or more and 550 nm or less. Furthermore, by using a semiconductor laser element 200 containing semiconductors mainly composed of Al, Ga, In, As, and P as its main components, the semiconductor laser element 200 can emit laser light L1 having a peak wavelength of, for example, 600 nm or more and 1600 nm or less. Note that the semiconductor laser element 200 is not limited to semiconductor laser elements made of the above-mentioned semiconductor materials, and the wavelength of the laser light L1 emitted by the semiconductor laser element 200 is not limited to the above-mentioned wavelengths.

[0039] The laser light L1 is emitted from the light emitting region 201 while spreading. The width of the light emitting region 201 in the slow axis direction (the direction parallel to the stacking surface of the semiconductor stacked film) is defined as width Ws. The spread angle of the emitted laser light L1 is defined as 1 / (e ２ ), the divergence angle in the fast axis direction is, for example, between 30° and 70°, and the divergence angle in the slow axis direction is, for example, between 3° and 25°.

[0040] In this embodiment, the optical waveguide of the semiconductor laser element 200 is disposed on the submount 230 side. That is, the semiconductor laser element 200 is fixed by so-called junction-down mounting. The active layer of the semiconductor laser element 200 is disposed so as to be parallel to the first upper surface 231 of the submount 230. That is, the active layer is parallel to the surface of the semiconductor laser element 200 on the submount 230 side. In addition, the first bonding member 240 between the submount 230 and the semiconductor laser element 200 can be configured to have a uniform thickness.

[0041] Therefore, the active layer is a layer parallel to the xy plane, and the fast axis of the laser light L1 immediately after being emitted from the semiconductor laser element 200 is the z-axis direction, and the slow axis of the laser light L1 is an axis parallel to the x-axis direction.

[0042] The lens unit 100 is a member having a first cylindrical lens 110 and a support member 120. The lens unit 100 will be described with reference to FIGS.

[0043] Fig. 4 is an exploded perspective view of the lens unit 100 according to this embodiment. Fig. 5 is a cross-sectional view showing a cut surface of the semiconductor laser device 1 taken along line VV in Fig. 3. For simplicity, Fig. 5 shows only the semiconductor laser element 200, the submount 230, and the first cylindrical lens 110. Note that Fig. 4 shows a state in which the x-axis and z-axis are inverted compared to Fig. 2. Also, Fig. 4 shows the installation direction and the like using dashed arrows.

[0044] The first cylindrical lens 110 receives the laser light L1 emitted from the semiconductor laser element 200 and emits the laser light L1 with a small divergence angle in the fast axis direction. The divergence angle in the fast axis direction of the laser light L1 emitted from the first cylindrical lens 110 is, for example, between −1° and +1°. An angle with a negative sign indicates convergence. In this embodiment, the laser light L1 emitted from the semiconductor laser element 200 is directly incident on the first cylindrical lens 110. The first cylindrical lens 110 is a lens that quasi-collimates the laser light L1 in the fast axis direction.

[0045] The first cylindrical lens 110 is an optical component having a power axis having power (refractive power) and a non-power axis. The power axis and the non-power axis are arranged perpendicular to each other. That is, the first cylindrical lens 110 has a cylindrical surface. The first cylindrical lens 110 has a cylindrical surface that is convexly curved toward the power axis, i.e., the surface of a convex cylinder. The first cylindrical lens 110 is a convex cylindrical lens. The first cylindrical lens 110 is a convex lens. The power axis is tilted with respect to the fast axis of the laser light L1.

[0046] As shown in FIG. 5 , the first cylindrical lens 110 has an incident surface 117 onto which the laser light L1 is incident and an exit surface 116 from which the laser light L1 is emitted. In this embodiment, the first cylindrical lens 110 is a plano-convex cylindrical lens in which the incident surface is flat and the exit surface is convex. In this embodiment, the incident surface 117 is a surface parallel to the zx plane. The exit surface 116 is a first cylindrical surface, which is a convex surface whose curved surface is expressed by a spherical function or an aspherical function. The power axis is an axis parallel to the zx plane and inclined with respect to the z axis. In this embodiment, a plano-convex cylindrical lens is used as the first cylindrical lens 110. However, a biconvex cylindrical lens, such as a convex meniscus cylindrical lens having one convex side and the other concave side, may also be used.

[0047] The first cylindrical lens 110 is a member made of an inorganic transparent material such as glass, and an anti-reflection coating film that matches the wavelength of the laser light L1 is formed on an incident surface 117 and an exit surface 116 of the laser light L1.

[0048] The support member 120 is a member that is bonded to the first cylindrical lens 110 and supports the first cylindrical lens 110. The support member 120 includes a first support member 121, a second support member 122, and a third support member 123.

[0049] The first support member 121 is a member including a plate-like portion including a lower surface 1212 parallel to the x-y plane and a sloped portion including a lower surface 1211 inclined relative to the x-y plane. In other words, the lower surface 1211 is a surface inclined in the x-axis direction from the x-y plane, or in other words, a surface inclined in a direction rotated around the y-axis from the x-y plane. The second support member 122 and the third support member 123 have a rectangular parallelepiped shape and are joined to the lower surface 1212 of the first support member 121 at the positive z-axis surface of the rectangular parallelepiped shape. The second support member 122 includes a lower surface 1221, which is the surface opposite to the surface joined to the lower surface 1212 and is the negative z-axis surface of the rectangular parallelepiped shape. The third support member 123 includes a lower surface 1231, which is the surface opposite to the surface joined to the lower surface 1212 and is the negative z-axis surface of the rectangular parallelepiped shape. The lower surfaces 1221 and 1231 are parallel to the xy plane and are located on the same plane. The lower surfaces 1221 and 1231 are planes on which the lens unit 100 is bonded to a flat surface (first flat surface), and are called installation planes. The installation planes in this embodiment are the lower surface 1221 of the second support member 122 and the lower surface 1231 of the third support member 123. The first cylindrical lens 110 is bonded to the lower surface 1211. Therefore, the first cylindrical lens 110 is bonded to the support member 120 in a state where it is tilted from the xy plane.

[0050] The support member 120 includes a bonding surface, which is the surface where the support member 120 is bonded to the first cylindrical lens 110. In this embodiment, the lower surface 1211 of the slope portion included in the first support member 121 is the bonding surface.

[0051] The first support member 121, the second support member 122, and the third support member 123 are formed by processing a substrate of a semiconductor material such as glass or silicon, by partial etching, polishing, or cutting. Alternatively, they may be formed of a metal such as Fe or an Fe alloy, or Al. ２ O ３ , ZrO ２ , Si ３ N ４ Alternatively, it may be made of ceramic such as AlN.

[0052] The first cylindrical lens 110, the first support member 121, the second support member 122, and the third support member 123 are bonded to one another by a direct bonding method such as optical contact. Alternatively, the first cylindrical lens 110, the first support member 121, the second support member 122, and the third support member 123 are bonded to one another via a bonding material such as low-melting-point glass. A solder material such as AuSn solder may be used as the bonding material.

[0053] Here, an installation plane, which is an example of the first installation plane, will be described. Unless otherwise specified, an installation plane described without an ordinal number refers to the first installation plane. The installation plane is a plane that is joined to the installation plane (lower surface 1221 and lower surface 1231) of the lens unit 100 and to which the lens unit 100 is fixed. The installation plane is also a plane that is provided on the light source module 10, and in this case, is a plane that is provided on the semiconductor laser device 1. In this embodiment, the installation plane is the first upper surface 231 of the submount 230.

[0054] 3 , the installation plane (first upper surface 231) is fixed to the support member 120 of the lens unit 100. More specifically, the installation plane (first upper surface 231) is fixed to a lower surface 1221 of a second support member 122 and a lower surface 1231 of a third support member 123 included in the support member 120.

[0055] In this way, the support member 120 is a member that is fixed to the flat surface on which the lens is to be placed (first upper surface 231), and is also a member that is bonded to the first cylindrical lens 110. In other words, the first cylindrical lens 110 is bonded to the flat surface on which the lens is to be placed (first upper surface 231) via the support member 120.

[0056] Furthermore, the generatrix 115 of the first cylindrical lens 110 will be described.

[0057] The first cylindrical lens 110 is a cylindrical lens having a first cylindrical surface. The first cylindrical surface has a generatrix 115 illustrated by a dashed line. The emission surface 116 of the first cylindrical lens 110 is a convex first cylindrical surface. Generally, a generatrix is ​​a straight line at each position when the cylindrical surface (curved surface) of the first cylindrical surface is formed by linear movement (when drawn by linear movement), and the generatrix 115 is one of countless generatrixes. The generatrix 115 is a straight line along the convex vertex of the surface of the convex cylinder that is the emission surface 116. The generatrix 115 of the first cylindrical lens 110 according to this embodiment is inclined with respect to the installation plane (first upper surface 231). The generatrix 115 is also inclined with respect to the installation plane (lower surface 1221 and lower surface 1231) of the lens unit 100. Since the installation plane (first upper surface 231), the active layer, and the xy plane are parallel, the bus 115 is inclined with respect to the active layer and the xy plane of the semiconductor laser device 200. In addition, the installation plane (lower surface 1221 and lower surface 1231), the active layer, and the xy plane are parallel to each other.

[0058] Here, the angle between the generatrix 115 and the active layer is defined as angle θ. By setting θ within the angle range of |θ|<22.5°, it is possible to prevent the direction of the fast axis of the laser light L1 from changing from the z-axis to the x-axis. Since the generatrix 115 is inclined with respect to the active layer, in this embodiment, θ satisfies 0°<|θ|<22.5°.

[0059] 3, in this embodiment, the bus 115 is tilted clockwise with respect to the mounting plane (first upper surface 231) and the xy plane when viewed from the front. In this embodiment, the angle β between the bus 115 and the mounting plane is equal to θ. The angle φ between the active layer and the mounting plane is 0°.

[0060] Referring again to FIG. 1, the components of the light source module 10 will be described.

[0061] As described above, semiconductor laser device 1 (more specifically, semiconductor laser element 200) emits laser light L1. Similarly, semiconductor laser devices 2 to 6 emit laser light L2, L3, L4, L5, and L6, respectively. The multiple laser light beams (i.e., laser light beams L1 to L6) emitted from the multiple semiconductor laser devices are incident on slow-axis collimator lens 600 (hereinafter referred to as SAC lens 600).

[0062] The SAC lens 600 is a lens having a convex cylindrical surface. As an example, the SAC lens 600 is made of glass with an anti-reflection coating formed on its surface, and in this embodiment, it is a plano-convex cylindrical lens. In this embodiment, a plano-convex cylindrical lens is used as the SAC lens 600, but a biconvex cylindrical lens or a convex meniscus cylindrical lens with one side convex and the other concave may also be used. Furthermore, a concave reflective cylindrical mirror may also be used as the SAC lens 600.

[0063] The SAC lens 600 has a cylindrical surface that is convexly curved in the power axis, i.e., a convex cylindrical surface. The SAC lens 600 has a non-power axis in a direction perpendicular to the power axis. The SAC lens 600 is a lens that has power in the slow axis of the laser light. Each of the multiple SAC lenses 600 collimates the component of the laser light in the slow axis direction that is incident on it.

[0064] With the above configuration, the laser beams emitted from the semiconductor laser devices and passed through the SAC lenses 600 are collimated in both the fast axis and the slow axis and travel as collimated emitted beams. Each of the SAC lenses 600 is installed on the first stage of each of the stages. For example, the SAC lens 600 onto which the laser beam L1 is incident is installed on the first stage 511a.

[0065] Furthermore, a reflecting mirror 700 is arranged in the direction in which the laser light from each of the plurality of semiconductor laser devices is emitted.

[0066] Each of the multiple reflecting mirrors 700 is an optical component having an incident surface onto which the laser light that has passed through each of the multiple SAC lenses 600 is incident. The multiple reflecting mirrors 700 each reflect the laser light collimated by the multiple first cylindrical lenses 110 and the multiple SAC lenses 600, and deflect the direction of the laser light by 90°. Each of the multiple reflecting mirrors 700 is installed on the first stage of each of the multiple stages. For example, the reflecting mirror 700 onto which the laser light L1 is incident is installed on the first stage 511a.

[0067] The multiple laser beams, each reflected by the reflecting mirror 700, are spatially combined so that they form the same optical axis in the fast axis, i.e., the z-axis direction, when each laser beam is emitted from the semiconductor laser element 200, and reach the focusing lens 800 fixed to the base 502.

[0068] The condenser lens 800 is an optical component having an incident surface onto which the laser beams that have passed through each of the multiple SAC lenses 600 are incident. Furthermore, the condenser lens 800 is also an optical component onto which the multiple laser beams that have passed through the reflecting mirror 700 are incident. In this embodiment, the condenser lens 800 is a lens that condenses the multiple laser beams that have reached it. The multiple parallel laser beams, each with their fast axes aligned with the same optical axis by the reflecting mirror 700, are incident on the condenser lens 800. Furthermore, the multiple laser beams condensed by the condenser lens 800 are incident on the incident surface, which is the end face of the core 550a of the optical fiber 550, which is an example of the target. By providing such a condenser lens 800, the multiple laser beams can be efficiently condensed onto the end face of the core 550a, which is the target. In other words, the laser beams emitted from the multiple semiconductor laser devices and condensed by the reflecting mirror 700 are coupled to the optical fiber 550 and the core 550a.

[0069] The optical fiber 550 passes through the side wall 503. Therefore, the laser light coupled to the optical fiber 550 is guided to the outside of the light source module 10. The boot 551 is a member that covers and protects the periphery of the optical fiber 550.

[0070] It is possible to use multiple SAC lenses 600 corresponding to multiple semiconductor laser devices that all have the same shape, and it is possible to use multiple reflecting mirrors 700 corresponding to multiple semiconductor laser devices that all have the same shape.

[0071] As shown in FIG. 1, one semiconductor laser device, one SAC lens 600 and one reflecting mirror 700 are arranged on each of the multiple stages of the staircase base 510 .

[0072] The first cylindrical lens 110 will be described in more detail with reference to FIGS.

[0073] Fig. 6 is an enlarged cross-sectional view of the light-emitting region 201 and the first cylindrical lens 110 in Fig. 5. In this specification, a cross-sectional view refers to a view showing only the surface that appears in the cross section. In Fig. 5 and subsequent figures, the optical axis A1 of the laser light L1 may be indicated by a dashed line. In Fig. 6, the light-emitting region 201 is shown as a dot for the sake of explanation.

[0074] As shown in FIG. 5, the first cylindrical lens 110 according to this embodiment is a member having an incident surface 117 , an exit surface 116 , a first side surface 111 and a second side surface 112 .

[0075] As described above, the laser light L1 is emitted from the light emitting region 201 of the semiconductor laser element 200, and then enters the incident surface 117 of the first cylindrical lens 110. Furthermore, the laser light L1 incident from the incident surface 117 is emitted from the exit surface 116. The laser light L1 emitted from the exit surface is quasi-collimated light.

[0076] The first side surface 111 is a side surface parallel to the generatrix 115. The second side surface 112 is a side surface facing away from the first side surface 111 and parallel to the generatrix 115. The first side surface 111 is located on the positive side of the z axis, and therefore can also be said to be the upper surface of the first cylindrical lens 110, while the second side surface 112 is located on the negative side of the z axis, and therefore can also be said to be the lower surface of the first cylindrical lens 110.

[0077] As described above, the joint surface is the lower surface 1211 of the slope portion included in the first support member 121. The joint surface (lower surface 1211) is joined to the first side surface 111 or the second side surface 112, but in this example, it is joined to the first side surface 111. In addition, the joint surface (lower surface 1211) is a surface parallel to the first side surface 111, the second side surface 112, and the generatrix 115.

[0078] Further, the first cylindrical lens 110 will be described in detail with reference to Fig. 6. The first cylindrical lens 110 is defined as follows.

[0079] First, the dimensions of the first cylindrical lens 110 are thickness T1 in the y-axis direction and width W2 in the z-axis direction. The refractive index of the first cylindrical lens 110 is n. The position of the principal point of the first cylindrical lens 110 is principal point P1, the effective focal length is F1, and the distance from the focal position to the incident surface 117 is BFL. The effective aperture width on the emission side of the laser light L1 is W3. The light-emitting region 201 of the semiconductor laser element 200 is disposed at the focal position, and the distance between the principal point P1 and the light-emitting region 201 is the effective focal length F1. The laser light L1 emitted from the light-emitting region 201 at a predetermined divergence angle is quasi-collimated by the first cylindrical lens 110, becoming laser light L1 with a beam width W4 in the fast-axis direction.

[0080] 7 to 11, an example of a manufacturing method for the light source module 10 will be described. Here, the vicinity of the semiconductor laser device 1 of the light source module 10 will be particularly described in detail, but the vicinity of the other semiconductor laser devices 2 to 6 are also manufactured in a similar manner.

[0081] 7, 8, 9, 10, and 11 are schematic diagrams showing steps in a manufacturing method for the semiconductor laser device 1 and its vicinity of the light source module 10 according to this embodiment. In the drawings showing the manufacturing method below, the installation direction may be indicated by a dashed arrow. Also, in FIGS. 7 to 9, the x-axis and z-axis are shown reversed compared to FIG. 2.

[0082] As shown in FIGS. 7 to 11, the semiconductor laser device 1 is manufactured in the following order.

[0083] First, a preparation step is performed in which the lens section 100 and the laser unit 20 are manufactured and prepared.

[0084] 7 , the support member 120 is manufactured. The second support member 122 and the third support member 123 are joined to the first support member 121. More specifically, the upper surface of the second support member 122 (the surface opposite to the lower surface 1221) and the upper surface of the third support member 123 (the surface opposite to the lower surface 1231) are each joined to the lower surface 1212 of the first support member 121.

[0085] 8 and 9 , the first cylindrical lens 110 is bonded to the support member 120. More specifically, the first side surface 111 of the first cylindrical lens 110 is bonded to the lower surface 1211 of the slope portion included in the first support member 121 of the support member 120. In other words, the first cylindrical lens 110 is bonded to the bonding surface (lower surface 1211) of the first support member 121. This fixes the positional relationship between the first cylindrical lens 110, the first support member 121, the second support member 122, and the third support member 123, and the lens unit 100 is manufactured.

[0086] 10 , the laser unit 20 is manufactured before the lens section 100 is placed on a flat surface to be installed. At this time, to explain the submount 230 in more detail, in addition to the first electrode 210 and the second electrode 220, two base layers 232 are formed in advance on a first upper surface 231 side of a base material 236. The two base layers 232 are formed by patterning the same metal material into rectangular shapes when forming the first electrode 210 and the second electrode 220, and are spaced apart from the first electrode 210 on which the semiconductor laser element 200 is to be placed. Therefore, the first upper surface 231, which is the flat surface to be installed, is the surface (top surface) of the first electrode 210, the second electrode 220, and the base layer 232, which are all flush with each other.

[0087] In this embodiment, the first bonding member 240 and two second bonding members 233 are laminated on the submount 230 in advance.

[0088] The two second bonding members 233 are layers laminated on the base layer 232, and in this case are solder layers made of a solder material. The two second bonding members 233 have a circular shape and are layers for bonding the first upper surface 231 of the submount 230 to the lens unit 100 (more specifically, the support member 120).

[0089] Next, the semiconductor laser element 200 is bonded to a predetermined position on the first bonding member 240 of the submount 230 by the first bonding member 240. Specifically, the submount 230 is placed on a heating stage, and the semiconductor laser element 200 is placed on the first bonding member 240 and pressurized. The first bonding member 240 is then heated to a temperature equal to or higher than the melting point of the first bonding member 240 by the heating stage, and then cooled. In this way, the submount 230 and the semiconductor laser element 200 are bonded together, and the laser unit 20 is manufactured.

[0090] 1, the laser unit 20 is fixed onto the second step 511b of the staircase base 510 of the case 501. At this time, the laser unit 20 is fixed to the staircase base 510 with a bonding material (not shown). Next, the optical fiber 550, the condenser lens 800, and the reflecting mirror 700 are fixed to the case 501 in predetermined positions.

[0091] Next, an arrangement step is performed. In the arrangement step, the lens section 100 is arranged at a predetermined position of the laser unit 20. More specifically, the lens section 100 is arranged on the first upper surface 231 of the submount 230, which is the flat surface on which the lens section 100 is to be placed. Here, the lens section 100 is arranged so that the laser light L1 emitted from the semiconductor laser element 200 is incident on the first cylindrical lens 110 and so that the generatrix 115 of the first cylindrical lens 110 is inclined with respect to the flat surface on which the lens section 100 is to be placed (the first upper surface 231).

[0092] 9 is turned upside down, the lens unit 100 is arranged so that one second bonding member 233 contacts the lower surface 1221 of the second support member 122 and the other second bonding member 233 contacts the lower surface 1231 of the third support member 123. At this time, the lens unit 100 is arranged so that the laser light L1 is incident on the first cylindrical lens 110 and so that the generatrix 115 is inclined with respect to the installation plane (first upper surface 231). Because the first side surface 111 parallel to the generatrix 115 is joined to the lower surface 1211 inclined with respect to the xy plane and because the installation plane (first upper surface 231) is parallel to the xy plane, the lens unit 100 can be arranged so that the generatrix 115 is inclined with respect to the installation plane (first upper surface 231).

[0093] Even after this placement step is completed, the lens section 100 and the laser unit 20 are not joined together, that is, the relative positions of the lens section 100 and the submount 230 are not fixed. At this stage, the lens section 100 can be moved relative to the position of the submount 230.

[0094] In this placement step, the SAC lens 600 is also placed at a predetermined position in the case 501 , but like the lens unit 100 , it is not fixed to the case 501 .

[0095] Next, an alignment step is performed. The alignment step is a process of moving the lens unit 100 arranged in the arrangement step. The alignment step is also a process of making the laser light L1 emitted from the semiconductor laser element 200 incident on the first cylindrical lens 110. More specifically, the alignment step is a process of moving the lens unit 100 in two mutually orthogonal directions parallel to the installation plane (first upper surface 231). Here, since the installation plane (first upper surface 231) is parallel to the xy plane, the lens unit 100 can be moved in the x-axis direction and the y-axis direction. The lens unit 100 can be moved along the installation plane (first upper surface 231), and here, the installation plane (lower surface 1221 and lower surface 1231) of the lens unit 100 moves relative to the installation plane (first upper surface 231).

[0096] For example, when the lens unit 100 is moved in the x-axis direction along the installation plane, the generatrix 115 of the first cylindrical lens 110 moves in the z-axis direction at a specific position in the x-axis direction because the generatrix 115 is inclined with respect to the x-axis. In other words, the z-axis deviation d between the generatrix 115 of the first cylindrical lens 110 and the laser light L1 that has reached the first cylindrical lens 110 changes. Hereinafter, the distance from the z-axis position of the optical axis of the laser light L1 that has reached the first cylindrical lens 110 to the z-axis position of the generatrix of the first cylindrical lens 110 is defined as the z-axis deviation d.

[0097] As a result, the angle of the traveling direction of the laser light L1 emitted from the first cylindrical lens 110 can be changed in the fast axis direction (z-axis direction). That is, the angle between the optical axis A1 of the laser light L1 and the optical axis (not shown) of the optical system of the light source module 10 can be controlled. For example, when the optical system of the light source module 10 is positioned as designed, as shown in FIG. 5 , by setting the z-axis misalignment d to zero, the optical axis A1 of the emitted laser light L1 becomes parallel to the optical axis of the optical system of the light source module 10. As a result, the coupling efficiency between the laser light L1 and the core 550a at the end face of the optical fiber 550 can be increased. Hereinafter, for simplicity, this coupling efficiency may be referred to as the coupling efficiency of the laser light L1 or simply as the coupling efficiency.

[0098] Furthermore, when the lens unit 100 is moved in the y-axis direction, the distance between the incident surface 117 of the first cylindrical lens 110 and the light-emitting region 201 is changed. As a result, it is possible to control the parallelism of the laser light L1 emitted from the first cylindrical lens 110. As a result, it is possible to further increase the coupling efficiency between the laser light L1 and the core 550a.

[0099] Furthermore, when the lens unit 100 is moved, a device such as a collet comes into contact with the support member 120, thereby moving the lens unit 100. In other words, the collet does not come into direct contact with the first cylindrical lens 110.

[0100] In the alignment step, the lens unit 100 can be moved as a whole. That is, the entire lens unit 100 can be moved while the positional relationship between the first cylindrical lens 110, the first support member 121, the second support member 122, and the third support member 123 is fixed.

[0101] In the alignment step, the position of the lens unit 100 is moved, that is, the position of the lens unit 100 is adjusted, so that the coupling efficiency between the emitted laser light L1 and the optical fiber 550 is increased.

[0102] Here, for example, in this alignment step, it is preferable to move the lens unit 100 while the semiconductor laser element 200 is emitting the laser light L1. The laser light L1 emitted from the semiconductor laser element 200 passes through the first cylindrical lens 110, the SAC 600, the reflecting mirror 700, and the condenser lens 800, and is then condensed onto the end face of the optical fiber 550.

[0103] At this time, the position of the lens unit 100 is adjusted while observing the light intensity of the laser light L1 emitted from the optical fiber 550. Specifically, the lens unit 100 is slightly moved in the x-axis direction and the y-axis direction. At this time, the position of the lens unit 100 is adjusted so that the light intensity of the laser light L1 emitted from the optical fiber 550 is maximized, which is called active alignment.

[0104] Furthermore, a fixing step is performed in which the lens unit 100 moved in the alignment step is fixed to the installation plane (first upper surface 231).

[0105] For example, by applying heat to the two second bonding members 233, the solder material constituting the second bonding members 233 melts, and the lens unit 100 and the flat surface (first upper surface 231) are fixed together. By performing the fixing step, the semiconductor laser device 1 shown in FIG. 11 is manufactured.

[0106] In this way, the lens unit 100 (more specifically, the support member 120) and the submount 230 are bonded at the installation plane (lower surface 1221 and lower surface 1231) and the installation surface (first upper surface 231). Therefore, for example, compared to when the lens unit 100 and the submount 230 are bonded point-to-point, the bonding area can be made larger, and the thickness of the two second bonding members 233 can be made thinner. For example, the thickness of the two second bonding members 233 is 0 μm or more and 10 μm or less. Note that a thickness of 0 μm for the second bonding member 233 means that there is a location where the installation plane and the installation surface are partially in contact.

[0107] As described above, the method for manufacturing the light source module 10 according to this embodiment includes a placement step, an alignment step, and a fixing step.

[0108] As described above, the alignment step is a process of moving the lens unit 100, that is, the first cylindrical lens 110. In other words, the first cylindrical lens 110 according to this embodiment is a position-adjusting lens whose position can be adjusted in order to optimize the optical axis and parallelism of the laser light L1 in the semiconductor laser device 1.

[0109] In the present embodiment, the generatrix 115 of the first cylindrical lens 110 is inclined with respect to the installation plane (first upper surface 231), and is also inclined with respect to the active layer of the semiconductor laser element 200. The influence of the angle β formed between the generatrix 115 and the installation plane (first upper surface 231) on alignment will be described below.

[0110] 12 is a diagram showing the relationship between the angle β according to this embodiment and the amount of movement (Δz) in the z-axis direction and the amount of movement (Δx) in the x-axis direction of the first cylindrical lens 110. Note that hereinafter, the amount of movement in the z-axis direction may be referred to as Δz, and the amount of movement in the x-axis direction may be referred to as Δx. In FIG. 12, the horizontal axis is the angle β, and the vertical axis is the value obtained by dividing Δz of the first cylindrical lens 110 by Δx of the first cylindrical lens 110.

[0111] Here, Δz and Δx will be described with reference to FIG.

[0112] 13 is a front view showing an example in which the lens unit 100 (first cylindrical lens 110) has moved in the x-axis direction in the alignment step according to this embodiment. More specifically, (a) of FIG. 13 is a front view before the lens unit 100 (first cylindrical lens 110) has moved, and (b) of FIG. 13 is a front view after the lens unit 100 (first cylindrical lens 110) has moved. For simplicity, FIG. 13 mainly illustrates the first cylindrical lens 110 and the semiconductor laser element 200.

[0113] As shown in FIG. 13 , a case will be described in which the first cylindrical lens 110 moves from the position shown in FIG. 13 (a) to the position shown in FIG. 13 (b) during the alignment step. The amount of movement in the x-axis direction from the position shown in FIG. 13 (a) to the position shown in FIG. 13 (b) is Δx. For simplicity of explanation, the case is shown here in which the position of the optical axis of the laser light L1 reaching the first cylindrical lens 110 coincides with the center position of the light-emitting region 201. In this case, when viewed from the front, the z-axis direction deviation d between the light-emitting region 201 and the generatrix 115 changes from d1 shown in FIG. 13 (a) to d2 shown in FIG. 13 (b). In other words, in this embodiment, when the first cylindrical lens 110 moves in the x-axis direction, the z-axis direction deviation d between the generatrix 115 and the light-emitting region 201 changes. In this case, Δz = d2 - d1.

[0114] 12 indicates the amount of change in the x-axis direction of the first cylindrical lens 110 in the alignment step described above. Δz of the first cylindrical lens 110 indicates the amount of change in the z-axis direction deviation d between the light-emitting region 201 and the generatrix 115 in front view when the first cylindrical lens 110 moves in the x-axis direction.

[0115] As shown in FIG. 12 , when the angle β between the generatrix 115 and the installation plane (first upper surface 231) satisfies 0°<|β|<45°, Δz / Δx is less than 1. In other words, when the position of the lens unit 100 is adjusted in the alignment step, Δz is always smaller than Δx. Therefore, when the position of the lens unit 100 in the x-axis direction is adjusted using manufacturing equipment, the position in the x-axis direction can be adjusted with an accuracy equal to the manufacturing equipment accuracy, and the position in the z-axis direction can be adjusted with an accuracy higher than the manufacturing equipment accuracy. Therefore, the optical axis A1 of the laser light L1 emitted from the first cylindrical lens 110 can be precisely aligned parallel to the xy plane. For example, when the angle β is 6°, the vertical axis in FIG. 12 is 0.1, and the position in the z-axis direction can be adjusted with an accuracy 10 times the equipment accuracy. Note that in this embodiment, since θ = β, 0°<|β|<22.5°.

[0116] Further, Δz and Δx will be described.

[0117] Fig. 14 is a diagram showing the relationship between the angle β, Δz, and Δx according to this embodiment, in which Δx and Δz are shown for each of the cases where the angle β is β = 0°, 1°, 3°, 6°, and 10°.

[0118] As described above, when the first cylindrical lens 110 moves in the x-axis direction, the z-axis direction deviation d between the generatrix 115 and the light-emitting region 201 changes. In other words, the movement of the first cylindrical lens 110 in the x-axis direction can be converted into the movement of the first cylindrical lens 110 in the z-axis direction. Furthermore, when Δz / Δx is less than 1, the amount of change in position in the z-axis direction can be made gentler than the amount of change in position in the x-axis direction. In this embodiment, since β = θ, 0° < |β| < 22.5°.

[0119] For example, in order to adjust the z-axis misalignment d between the light-emitting region 201 and the generatrix 115 within a range of ±1 μm, the following control may be performed. When the angle β is β=1°, the position of the lens unit 100 may be changed within a range of ±57 μm in the x-axis direction. When the angle β is β=6°, the position of the lens unit 100 may be changed within a range of ±9.5 μm in the x-axis direction. In this way, when it is desired to slightly change the z-axis distance between the light-emitting region 201 and the generatrix 115, the lens unit 100 may be moved by a larger amount in the x-axis direction. In other words, the effect is achieved of more easily adjusting the z-axis position of the first cylindrical lens 110 (more specifically, the generatrix 115). It is even better if 0.5°≦|β|≦2° so that Δz / Δx is 0.01 or greater and the coupling efficiency between the laser light and the target is 0.7 or greater.

[0120] 14, when the angle β is β=0° (i.e., when the generating line 115 and the installation plane (first upper surface 231) are parallel), even if the lens unit 100 is moved in the x-axis direction, the lens unit 100 (generator line 115 of the first cylindrical lens 110) does not move in the z-axis direction. Therefore, the above-mentioned effect cannot be obtained.

[0121] Here, a comparative example will be used for explanation.

[0122] 15 is a cross-sectional view showing a semiconductor laser device 1x according to a comparative example. The semiconductor laser device 1x has the same configuration as the semiconductor laser device 1, except that it includes a fast-axis collimator lens (hereinafter, FAC lens) 110x instead of the first cylindrical lens 110 and a bonding material 120x made of solder or the like instead of the support member 120. In the comparative example, the generatrix 115x is parallel to the installation plane (first upper surface 231) and the active layer. In other words, the semiconductor laser device 1x according to the comparative example corresponds to the semiconductor laser device 1 according to the present embodiment in which the angles θ, β, and φ are θ = β = φ = 0°. The FAC lens 110x is bonded to the submount 230 by the bonding material 120x.

[0123] The light source module according to the comparative example has the same configuration as the light source module 10 according to the present embodiment, except that it includes six semiconductor laser devices 1x instead of the semiconductor laser devices 1 to 6.

[0124] 16 is a diagram showing the relationship between the change in the position of the FAC lens 110x in the z-axis direction in a light source module including the semiconductor laser device 1x according to the comparative example and the coupling efficiency of the laser light to the optical fiber 550. Fig. 16 shows the results of simulation calculations of the coupling efficiency under three different conditions (No. 1, No. 2, No. 3) in the semiconductor laser device 1x.

[0125] FIG. 17 is a diagram showing a table for explaining the simulation conditions of FIG.

[0126] In order to increase the optical output of the light emitted from the light source module 10, it is necessary to increase the width Ws of the light emitting region 201 of the semiconductor laser element 200 and increase the optical output. Also, in order to increase the radiance of the light emitted from the light source module 10, it is necessary to reduce the core diameter (diameter) of the core 550a of the optical fiber 550. Meanwhile, in the optical system of a certain light source module (for example, the light source module according to the comparative example), the coupling efficiency of the laser light to the optical fiber 550 strongly depends on the width Ws of the light emitting region 201 of the semiconductor laser element 200 and the core diameter (diameter) of the core 550a of the optical fiber 550.

[0127] Under conditions No. 1 to No. 3, as an example of the optical system of the light source module 10, the effective focal length F1 and distance BFL of the FAC lens 110x are set to 0.38 mm and 0.09 mm, the effective focal length of the SAC lens 600 is set to 13.5 mm, and the effective focal length of the condenser lens 800 is set to 7.3 mm, and the combination of the width Ws and the core diameter of the core 550a is changed. In this case, the peak wavelength of the semiconductor laser element 200 is set to 450 nm, and the numerical aperture NA of the optical fiber 550 is set to 0.22.

[0128] Under condition No. 1, Ws was 50 μm and the core diameter was 50 μm. Under condition No. 2, Ws was 50 μm and the core diameter was 70 μm. Under condition No. 3, Ws was 100 μm and the core diameter was 100 μm.

[0129] The case where the position in the z-axis direction, which is the horizontal axis in Fig. 16, is 0 will be described. In Fig. 16, the position in the z-axis direction at which the highest coupling efficiency was obtained under each of three different conditions is set to 0, and the coupling efficiency at this time is normalized to 1. Fig. 16 shows the change in coupling efficiency when all six FAC lenses 110x are moved by the same amount in the positive z-axis direction or the negative z-axis direction from the position in the z-axis direction of 0.

[0130] If the position of the FAC lens 110x is shifted in the positive direction of the z-axis, the angle between the optical axis A1 of the laser beam L1 and the optical axis of the semiconductor laser element 200 changes in the positive direction of the z-axis, causing the position of the laser beam L1 on the incident surface of the core 550a of the optical fiber 550 to shift in the positive direction of the z-axis, resulting in a decrease in coupling efficiency. As shown in Figure 16, for example, under condition No. 1, even if the position of the FAC lens 110x is moved in the positive direction of the z-axis by just 1.0 μm, the coupling efficiency decreases to approximately 0.4. Furthermore, for example, under condition No. 2, even if the position of the FAC lens 110x is moved in the positive direction of the z-axis by just 1.5 μm, the coupling efficiency decreases to approximately 0.3. Furthermore, for example, under condition No. 3, even if the position of the FAC lens 110x is moved in the positive direction of the z-axis by just 2.0 μm, the coupling efficiency decreases to approximately 0.3. That is, when the position of the FAC lens 110x is slightly moved in the positive or negative direction of the z axis, the coupling efficiency drops sharply under all of the conditions No. 1 to No. 3.

[0131] Also, as shown in FIG. 17 , in the comparative example, the distance BFL is 0.09 mm, which is very large. Therefore, the thickness of the bonding material 120x in the y-axis direction is approximately 0.09 mm, which is significantly larger than the misalignment of several micrometers that affects the coupling efficiency. In this comparative example, during the manufacturing process of bonding the FAC lens 110x and the submount 230, when the bonding material 120x is melted, the bonding material 120x may sag in the negative z-axis direction due to gravity, for example, and the distribution of the bonding material 120x in the z-axis direction may change. For example, in this comparative example, the bonding material 120x is attached to the lower part of the FAC lens 110x (the surface on the negative z-axis side). At this time, the thickness of the bonding material 120x in the y-axis direction is very large and the thickness in the z-axis direction is distributed. Therefore, when the bonding material 120x melts and hardens, the bonding material 120x may easily shrink by several micrometers in the z-axis direction. As described above, due to the sagging and large shrinkage of the bonding material 120x, the position of the FAC lens 110x according to the comparative example is shifted in the z-axis direction from the designed position. As a result, the incident position of the laser light L1 at the end face of the optical fiber 550 is shifted from the center of the core 550a, reducing the coupling efficiency. Furthermore, the actual distance BFL deviates from the designed value of 0.09 mm, the parallelism of the laser light L1 deteriorates, and the major and minor axes (sizes) of the laser light L1 at the incident surface of the optical fiber 550 increase. In this case, for example, if the major axis of the laser light L1 at the incident surface of the optical fiber 550 becomes larger than the core diameter of the optical fiber 550, the coupling efficiency decreases.

[0132] In this way, in the comparative example, the FAC lens 110x and the submount 230 are bonded together by a bonding material 120x that is thick in the y-axis direction, so the above phenomenon is likely to occur, and when this phenomenon occurs, the coupling efficiency decreases, which is a problem.

[0133] However, in this embodiment, the thickness of the two second bonding members 233 bonding the lens unit 100 (more specifically, the support member 120) and the submount 230 can be set to approximately 0.1 μm or more and 10 μm or less, i.e., sufficiently thin. Therefore, the amount of shrinkage of the second bonding members 233 when they melt and harden is smaller than that of the bonding material 120x according to the comparative example. Furthermore, as an example, if the z-axis direction is vertical, i.e., the xy plane is parallel to the horizontal direction, sagging of the two second bonding members 233 in the negative z-axis direction when melted is suppressed. Because the amount of shrinkage is small and the second bonding members 233 are less likely to sag, the coupling efficiency of the light source module 10 including the semiconductor laser device 1 according to this embodiment is less likely to decrease.

[0134] The semiconductor laser device 1 according to this embodiment will be considered again. Here, the influence on the optical characteristics of the semiconductor laser device 1 caused by the generatrix 115 of the first cylindrical lens 110 being inclined with respect to the installation plane (first upper surface 231) and the active layer will be considered.

[0135] Aberration occurs because the generatrix 115 is tilted with respect to the active layer, and therefore distortion is expected to occur in the light intensity distribution of the laser beams L1 to L6 at the incident surface of the condenser lens 800 and the light intensity distribution of the laser beams L1 to L6 at the incident surface of the optical fiber 550.

[0136] 18A and 18B are diagrams showing the results of a simulation of the light intensity distribution when the angle φ is 0° and the angle θ is 2° according to this embodiment. More specifically, (a) of FIG. 18A shows the light intensity distribution of the laser beams L1 to L6 at the incident surface of the focusing lens 800, and (b) of FIG. 18B shows the light intensity distribution of the laser beams L1 to L6 at the incident surface of the optical fiber 550. The outline of the core 550a, which is the target object, is also shown by a dashed line. In FIG. 18A, the beam spots of the laser beams L1 to L6 are shown, with the darker areas indicating higher light intensity.

[0137] In FIG. 18, the light intensity distribution is calculated under the conditions that the width Ws of the light emitting region 201 is 50 μm, the core diameter D is 50 μm, and the angle θ is 2°.

[0138] Because the generatrix 115 is inclined with respect to the installation plane (first upper surface 231) and the active layer, that is, the angle φ is φ=0° and the angle θ is θ=2°, and the left and right are reversed by the reflecting mirror 700, the value of the beam spots of the laser beams L1 to L6 increases with an increase in the value of the horizontal axis as shown in (a) of Figure 18. That is, in (a) of Figure 18, the beam spots of the laser beams L1 to L6 each have a shape that rises upward to the right.

[0139] 18(b), the laser beams L1 to L6 are focused by the focusing lens 800, and the laser beams L1 to L6 form a single beam spot on the incident surface of the optical fiber 550. This single beam spot slopes upward to the right, just like in FIG. 18(a), and its major axis exceeds the core diameter D of the optical fiber 550. Therefore, some of the laser beams L1 to L6 are focused outside the core 550a, but most of the laser beams L1 to L6 are focused in the core 550a. In other words, the laser beams L1 to L6 are coupled to the core 550a.

[0140] Here, in this embodiment, the effects and influences when the first cylindrical lens 110 according to this embodiment is tilted with respect to the installation plane will be described with reference to FIG. 19A for different values ​​of angle θ and angle β.

[0141] 19A is a diagram showing the results of simulation calculations of changes in coupling efficiency when the first cylindrical lens 110 according to the present embodiment is moved along the installation plane in the semiconductor laser device 1 in which the first cylindrical lens 110 is tilted with respect to the installation plane. FIG. 19B is a diagram showing the results of simulation calculations of the maximum value of coupling efficiency when the angles θ and β according to the present embodiment are changed.

[0142] In the simulation shown in Figure 19A, the light source module used was one with the condition No. 1 in Figure 17. That is, the width Ws of the light-emitting region 201 was 50 μm and the core diameter D was 50 μm. The angle φ was φ = 0°. It was assumed that the six first cylindrical lenses in the light source module were shifted 1 μm in the negative direction of the z-axis from their optimal positions. That is, the adjustment start position was assumed to be d1 = 1 μm. In this case, when the angles θ and β were θ = β = 0°, i.e., in the light source module according to the comparative example, the coupling efficiency was reduced to approximately 0.4, as shown in Figure 17. In this state, even if the first cylindrical lens of the comparative example, i.e., the FAC lens 110x, was moved in the x-axis direction, the coupling efficiency remained low.

[0143] On the other hand, FIG. 19A shows the change in coupling efficiency when the first cylindrical lens 110 is moved in the x-axis direction when the angle β according to this embodiment is greater than 0, specifically, when the angle β is 0.5°, 1°, or 2°. In this case, the angle φ is 0°, i.e., the angles β and θ are β=θ. Regardless of the angle β, the coupling efficiency is approximately 0.4 at the adjustment start position, i.e., when the movement is 0 μm, but the coupling efficiency improves by moving the lens in the positive x-axis direction. Furthermore, when the angle β is 2°, the coupling efficiency recovers to 0.7 by moving the lens in the positive x-axis direction by approximately 29 μm. When the angle β is 1°, the coupling efficiency recovers to 0.9 or more by moving the lens in the positive x-axis direction by approximately 57 μm. Furthermore, when the angle β is 0.5°, the coupling efficiency recovers to approximately 0.98 by moving the lens in the positive x-axis direction by approximately 120 μm. In other words, by making the angle β greater than 0° and moving the lens section 100 (first cylindrical lens 110) in the x-axis direction, the z-axis deviation d between the generating line 115 and the light-emitting region 201 can be changed, thereby improving the coupling efficiency.

[0144] Furthermore, at each angle, the range in the x-axis direction where the coupling efficiency is 90% of its maximum value, from the point where the coupling efficiency is maximized, is ±10 μm or more when the angle β is 2°, ±20 μm or more when the angle β is 1°, and ±30 μm or more when the angle β is 0.5°. In other words, in this embodiment, movement of the first cylindrical lens 110 in the x-axis direction is converted into movement of the first cylindrical lens 110 in the z-axis direction, and Δz / Δx can be reduced. Therefore, even if the lens unit 100 unintentionally moves, the amount of change in the position of the first cylindrical lens 110 in the z-axis direction can be made gentle. Therefore, even if the first cylindrical lens 110 is misaligned by several μm in the x-axis direction when fixed, the amount of decrease in coupling efficiency can be reduced compared to the FAC lens 110x of the light source module of the comparative example shown in FIG. 17 .

[0145] 19B , the maximum coupling efficiency is calculated under the following conditions: the width Ws of the light emitting region 201 is 50 μm and the core diameter D is 50 μm; the width Ws of the light emitting region 201 is 50 μm and the core diameter D is 70 μm; and the width Ws of the light emitting region 201 is 100 μm and the core diameter D is 100 μm. In addition, under all of the conditions, the maximum coupling efficiency of the comparative example (θ=β=0°) is normalized to 1.

[0146] As shown in Figure 19B, the coupling efficiency decreases as the angle β increases under all conditions. However, when the angle β is in the range of 0° to 2°, the coupling efficiency is approximately 0.7 to 0.9. On the other hand, in the comparative example shown in Figure 17, the coupling efficiency drops sharply to 0.4 or less when the FAC lens 110x is displaced from the optimal position by just a few μm in the negative z-axis direction.

[0147] Therefore, by using an optimum angle β, for example, by setting the angle β between 0.5° and 2°, a semiconductor laser device 1 exhibiting high coupling efficiency can be realized.

[0148] The light source module 10 according to this embodiment is manufactured as follows.

[0149] First, a case 501 is prepared. A staircase base 510, a condenser lens 800, an optical fiber 550, and a boot 551 are placed inside the case 501. A plurality of semiconductor laser devices 1 to 6 are fixed on the staircase base 510. A plurality of slow-axis collimator lenses 600 (SAC lenses 600) and a plurality of reflecting mirrors 700 are temporarily placed on the staircase base 510.

[0150] The semiconductor laser devices 1 to 6 are wired and connected by lead pins 552. While the semiconductor laser devices 1 to 6 are driven, the positions of the SAC lens 600 and the reflecting mirror 700 in the x-axis direction and the y-axis direction are moved, and they are fixed while being adjusted so that the amount of light incident on the optical fiber 550 is maximized (so that the coupling efficiency is maximized) (in other words, active alignment is performed). After the lid of the case 501 is closed, the case 501 is sealed. In this general manufacturing method, all installation surfaces are parallel to the xy plane, and no height or angle adjustment in the z-axis direction is performed, so the optical precision of each component directly contributes to the coupling efficiency.

[0151] The following describes Modifications 1 to 4 of Embodiment 1. The following description focuses on the differences from Embodiment 1, and the description of commonalities will be omitted or simplified.

[0152] 20 is a front view showing the configuration of a semiconductor laser device 1a according to Modification 1 of Embodiment 1. More specifically, (a) of Fig. 20 is a front view showing the semiconductor laser device 1a before a lens unit 100a is moved, and (b) of Fig. 20 is a front view showing the semiconductor laser device 1a after the lens unit 100a is moved.

[0153] The semiconductor laser device 1a according to this modification has the same configuration as the semiconductor laser device 1 according to the first embodiment, except that it includes a lens portion 100a instead of the lens portion 100, and further includes a fixing member 300.

[0154] The lens unit 100a is a member having a support member 120a and a first cylindrical lens 110. The support member 120a is configured by the first support member 121 according to the first embodiment.

[0155] The fixing member 300 has a third upper surface, which is a flat installation surface on which the lens unit 100a is fixed. The fixing member 300 has a first fixing member 310 and a second fixing member 320. The first fixing member 310 and the second fixing member 320 have a rectangular parallelepiped shape, and in this example, they have the same shape. The first fixing member 310 includes an upper surface 311, which is the surface on the positive side of the z-axis of the rectangular parallelepiped shape. The second fixing member 320 includes an upper surface 321, which is the surface on the positive side of the z-axis of the rectangular parallelepiped shape. The upper surfaces 311 and 321 are parallel to the xy plane and are located on the same plane. The upper surface 311 of the first fixing member 310 and the upper surface 321 of the second fixing member 320 together form the third upper surface, which is the flat installation surface on which the lens unit 100a is fixed. That is, the upper surface 311 and the upper surface 321 are bonded to the support member 120a of the lens unit 100a, more specifically, to the lower surface 1212 of the first support member 121. Furthermore, since the first fixing member 310 and the second fixing member 320 are at the same height in the z-axis direction, the first installation plane is parallel to the active layer. That is, the active layer is parallel to the first installation plane.

[0156] The installation plane is the surface where the lens unit 100 a is joined to the installation plane (upper surfaces 311 and 321 ), and in this modification, is the lower surface 1212 of the first support member 121 .

[0157] The first fixing member 310 and the second fixing member 320 are formed by processing a substrate of a semiconductor material such as glass or silicon, for example, by partial etching, polishing, or cutting. Alternatively, they may be formed of a metal such as Fe or an Fe alloy, and Al ２ O ３ , ZrO ２ , Si ３ N ４ Alternatively, it may be made of ceramic such as AlN.

[0158] In this modification, the two second bonding members 233 (not shown) are layers for bonding the first upper surface 231 of the submount 230 to the fixing member 300. In other words, the lower surface of the first fixing member 310 and the lower surface of the second fixing member 320 are in contact with the second bonding members 233, respectively.

[0159] Also in this modification, the angle θ between the busbar 115 and the active layer satisfies 0°<|θ|<22.5°.

[0160] Next, the manufacturing method will be described. In the arrangement step according to this modification, the fixing member 300 (the first fixing member 310 and the second fixing member 320) is bonded to the submount 230 before the lens unit 100a and the fixing member 300 are bonded together.

[0161] The alignment step according to this modification is performed as follows.

[0162] The alignment step is a process of moving the lens unit 100a in two mutually perpendicular directions parallel to the installation plane (top surfaces 311 and 321). Here, since the installation plane (top surfaces 311 and 321) is parallel to the xy plane, the lens unit 100a can be moved in the x-axis direction and the y-axis direction. For example, compared to the lens unit 100a shown in FIG. 20(a), the lens unit 100a shown in FIG. 20(b) has moved further in the positive x-axis direction.

[0163] As in embodiment 1, in the alignment step of this modified example, the lens unit 100a can be moved along the installation plane (upper surfaces 311 and 321), and here, the installation plane of the lens unit 100a (lower surface 1212 of the first support member 121) moves relative to the installation plane (upper surfaces 311 and 321).

[0164] In this way, in the alignment step, the lens unit 100a can be moved as a whole, i.e., the entire lens unit 100a can be moved while the positional relationship between the first cylindrical lens 110 and the support member 120a (first support member 121) is fixed.

[0165] In Modification 1, similar to the effect shown in Embodiment 1, by changing the position of lens unit 100a in the x-axis direction, it is possible to change the z-axis direction deviation d between generatrix 115 and light-emitting region 201 and improve the coupling efficiency. Furthermore, when the position of lens unit 100a in the x-axis direction is adjusted by manufacturing equipment, the position in the x-axis direction can be adjusted with an accuracy equal to the accuracy of the manufacturing equipment, and the position in the z-axis direction can be adjusted with an accuracy higher than the accuracy of the manufacturing equipment.

[0166] 21 is a front view showing the configuration of a semiconductor laser device 1b according to a second modification of the first embodiment. More specifically, (a) of Fig. 21 is a front view showing the semiconductor laser device 1b before a lens unit 100b included in the semiconductor laser device 1b is moved, and (b) of Fig. 21 is a front view showing the semiconductor laser device 1b after the lens unit 100b has been moved.

[0167] The semiconductor laser device 1b according to this modification has the same configuration as the semiconductor laser device 1 according to the first embodiment, except that the lens portion 100 is replaced with a lens portion 100b.

[0168] The lens unit 100b is a member having a first cylindrical lens 110b and a support member 120b. The first cylindrical lens 110b and the support member 120b will now be described with reference to FIGS.

[0169] Fig. 22 is a diagram showing the shape of a first cylindrical lens 110b according to this modification. More specifically, Fig. 22(a) is a perspective view of the first cylindrical lens 110b, and Fig. 22(b) is a front view of the first cylindrical lens 110b. Fig. 23 is an exploded perspective view of the lens unit 100b according to this modification.

[0170] As shown in Figure 22, in the first cylindrical lens 110b according to this modification, an inclined surface is formed by adding or removing either the first side surface 111 or the second side surface 112 of the first cylindrical lens 110 according to embodiment 1. In this modification, a case will be described in which a portion of the first cylindrical lens 110 on the first side surface 111 side is cut away. The first cylindrical lens 110 and the first cylindrical lens 110b each have a third side surface 113 that is perpendicular to the generatrix 115, and a fourth side surface 114 that faces away from the third side surface 113 and is perpendicular to the generatrix 115. Note that the third side surface 113 and the fourth side surface 114 do not have to be perpendicular to the generatrix 115. If the third side surface 113 and the fourth side surface 114 are parallel, there is little processing loss when cutting out multiple first cylindrical lenses 110b of the same shape from a long cylindrical lens.

[0171] Here, in (a) of Figure 22, the shape of the first cylindrical lens 110 before a portion is cut away is shown by a dashed line, and the first cylindrical lens 110b is shown by a solid line. The first cylindrical lens 110b has a first side surface 111b (inclined side surface) that is inclined with respect to the generatrix 115. (b) of Figure 22 is a front view of the first cylindrical lens 110b. The first side surface 111b is connected to the third side surface 113 and the fourth side surface 114. The first side surface 111b may be a cut surface. Note that the second side surface 112 is a side surface that faces away from the inclined side surface (first side surface 111b).

[0172] The first side surface 111b has a planar shape and is not parallel to the generating line 115 and the second side surface 112; that is, it is inclined with respect to the generating line 115. The first side surface 111b is also parallel to the y-axis direction, which is the traveling direction of the laser light. The first side surface 111b, which is an inclined side surface inclined with respect to the generating line 115, is arranged on the side facing the flat surface on which the laser beam is to be placed. The first side surface 111b is located on the positive side of the z-axis relative to the generating line 115 in a front view, and is a surface connected to the third side surface 113, the fourth side surface 114, the exit surface 116, and the entrance surface 117.

[0173] Furthermore, as shown in FIG. 23, the support member 120 b is a member having a first support member 121 b, a second support member 122, and a third support member 123.

[0174] The first support member 121b is a member that includes a lower surface 1211b that is parallel to the xy plane.

[0175] The second support member 122 and the third support member 123 are joined to the lower surface 1211b of the first support member 121b at their surfaces on the positive side of the z axis.

[0176] The support member 120b includes a bonding surface, which is the surface where the support member 120b is bonded to the first cylindrical lens 110b. In this modification, the lower surface 1211b of the first support member 121b is the bonding surface.

[0177] In this modification, the bonding surface (lower surface 1211b) is bonded to the first side surface 111b of the first cylindrical lens 110b. Therefore, the first side surface 111b is parallel to the xy plane. In this manner, the first side surface 111b, which is an inclined side surface, is placed on the lower surface 1211b, which is the bonding surface.

[0178] In this modification, as in the first embodiment, the mounting plane is the first upper surface 231 of the submount 230, and the mounting plane is the lower surface 1221 of the second support member 122 and the lower surface 1231 of the third support member 123. Furthermore, the active layer of the semiconductor laser device 200, the mounting plane (first upper surface 231), the mounting plane (lower surface 1221 and lower surface 1231), the bonding surface (lower surface 1211b), and the first side surface 111b are all planes parallel to the xy plane.

[0179] As described above, the first side surface 111b according to this modification is inclined with respect to the busbar 115, and therefore the busbar 115 is inclined with respect to the installation plane (first upper surface 231) and the active layer. The angle β between the busbar 115 and the installation plane (first upper surface 231) satisfies 0°<|β|<22.5°, and the angle θ between the busbar 115 and the active layer satisfies 0°<|θ|<22.5°. In this modification, the angle φ is 0°.

[0180] The alignment step according to this modification is performed as follows.

[0181] The alignment step is a process of moving the lens unit 100b in two mutually perpendicular directions parallel to the installation plane (first upper surface 231). Here, since the installation plane (first upper surface 231) is parallel to the xy plane, the lens unit 100b can be moved in the x-axis direction and the y-axis direction. For example, compared to the lens unit 100b shown in FIG. 21A, the lens unit 100b shown in FIG. 21B has moved further in the positive x-axis direction.

[0182] As in embodiment 1, in the alignment step of this modified example, the lens unit 100b can be moved along the installation plane (first upper surface 231), and here, the installation plane (lower surface 1221 and lower surface 1231) of the lens unit 100b moves relative to the installation plane (first upper surface 231).

[0183] In this way, in the alignment step, the lens unit 100b can be moved as a whole, i.e., the entire lens unit 100b can be moved while the positional relationship between the first cylindrical lens 110b and the support member 120b is fixed.

[0184] In Modification 2, similar to the effect shown in Embodiment 1, by changing the position of lens unit 100b in the x-axis direction, it is possible to change the z-axis misalignment d between generatrix 115 and light-emitting region 201 and improve the coupling efficiency. Furthermore, when the position of lens unit 100b in the x-axis direction is adjusted by manufacturing equipment, the position in the x-axis direction can be adjusted with an accuracy equal to the accuracy of the manufacturing equipment, and the position in the z-axis direction can be adjusted with an accuracy higher than the accuracy of the manufacturing equipment.

[0185] 24 is a front view showing the configuration of a semiconductor laser device 1c according to a third modification of the first embodiment. More specifically, (a) of Fig. 24 is a front view showing the semiconductor laser device 1c before a lens unit 100c included in the semiconductor laser device 1c is moved, and (b) of Fig. 24 is a front view showing the semiconductor laser device 1c after the lens unit 100c has been moved.

[0186] The semiconductor laser device 1c according to this modification has the same configuration as the semiconductor laser device 1 according to the first embodiment, except that it includes a lens portion 100c instead of the lens portion 100, and further includes a fixing member 300.

[0187] The lens unit 100c is a member having a support member 120c and a first cylindrical lens 110b. The support member 120c is a member including a plate-shaped portion including a lower surface 1212 parallel to the xy plane and a convex portion including a lower surface 1211c parallel to the xy plane. The lower surface 1211c of the convex portion protrudes further toward the negative side of the z-axis than the lower surface 1212 of the plate-shaped portion. When the support member 120c is viewed in the x-axis direction, the support member 120c has an L-shape.

[0188] In this modification, the mounting plane is the upper surface 311 of the first fixing member 310 and the upper surface 321 of the second fixing member 320. The first fixing member 310 and the second fixing member 320 are at the same height in the z-axis direction, so the first mounting plane is parallel to the active layer. That is, the active layer is parallel to the first mounting plane. The mounting plane is the lower surface 1212 of the support member 120c. The active layer of the semiconductor laser device 200, the mounting plane (upper surfaces 311 and 321), the mounting plane (lower surface 1212), the bonding surface (lower surface 1211c), and the first side surface 111b are all parallel to the xy plane.

[0189] In this modified example, the busbar 115 is also inclined with respect to the installation surface (top surfaces 311 and 321) and the active layer, and the angle β between the busbar 115 and the installation surface (top surfaces 311 and 321) satisfies 0° < |β| < 22.5°, and the angle θ between the busbar 115 and the active layer satisfies 0° < |θ| < 22.5°.

[0190] The alignment step according to this modification is performed as follows.

[0191] Here, the installation plane (top surfaces 311 and 321) is parallel to the xy plane, so that the lens unit 100c can be moved in the x-axis direction and the y-axis direction. For example, compared to the lens unit 100c shown in Fig. 24(a), the lens unit 100c shown in Fig. 24(b) moves further in the positive x-axis direction.

[0192] As in embodiment 1, in the alignment step of this modified example, the lens unit 100c can be moved along the installation plane (upper surfaces 311 and 321), and here, the installation plane of the lens unit 100c (lower surface 1212 of the support member 120c) moves relative to the installation plane (upper surfaces 311 and 321).

[0193] In this way, in the alignment step, the lens unit 100c can be moved as a whole, i.e., the entire lens unit 100c can be moved while the positional relationship between the first cylindrical lens 110b and the support member 120c is fixed.

[0194] In Modification 3, similar to the effect shown in Embodiment 1, by changing the position of lens unit 100c in the x-axis direction, it is possible to change the z-axis misalignment d between generatrix 115 and light-emitting region 201 and improve the coupling efficiency. Furthermore, when the position of lens unit 100c in the x-axis direction is adjusted by manufacturing equipment, the position in the x-axis direction can be adjusted with an accuracy equal to the accuracy of the manufacturing equipment, and the position in the z-axis direction can be adjusted with an accuracy higher than the accuracy of the manufacturing equipment.

[0195] [Fourth Modification of First Embodiment] FIG. 25 is a front view showing the configuration of a semiconductor laser device 1d according to a fourth modification of the first embodiment.

[0196] The semiconductor laser device 1 d according to this modification has the same configuration as the semiconductor laser device 1 according to the first embodiment, except that the submount 230 is replaced with a submount 230 d.

[0197] Figure 26 is an enlarged front view of the periphery of the second support member 122 in region XXVI of Figure 25. More specifically, (a) of Figure 26 is a front view before the lens unit 100 has moved, (b) of Figure 26 is a front view after the lens unit 100 has moved, and (c) of Figure 26 is a front view after the position of the lens unit 100 has been fixed and the lens unit 100 has been bonded. For simplicity, Figure 26 mainly illustrates the second support member 122 and the submount 230d.

[0198] First, the submount 230d will be described with reference to FIG.

[0199] The submount 230d has the same configuration as the submount 230, except for the following points. The submount 230d is provided with recesses 2351 and 2352 into which the second bonding member 233d is embedded. In this modification, the recesses 2351 and 2352 may be groove-shaped and extend in the y-axis direction.

[0200] The submount 230d may have one or more recesses. The recesses may be arranged across the ends of the second support member 122 and the third support member 123 in a front view. For example, one recess 2352 may be arranged below the end of the second support member 122 on the positive side of the x-axis, and one recess 2351 may be arranged below the end of the second support member 122 on the negative side of the x-axis. A portion of the recess 2351 is disposed below the second support member 122, and another portion of the recess 2351 is disposed laterally (in the negative x-axis direction) relative to the lower portion of the second support member 122. Similarly, a portion of the recess 2352 is disposed below the second support member 122, and another portion of the recess 2352 is disposed laterally (in the positive x-axis direction) relative to the lower portion of the second support member 122.

[0201] Furthermore, the first upper surface 231 (the upper surface of the base layer 232) has a support surface 2311. The support surface 2311 is a part of the first upper surface 231 (the upper surface of the base layer 232) and is a surface located between the upper surfaces of the two second bonding members 233d. The support surface 2311 supports the lower surface 1221 of the second supporting member 122. Here, the support surface 2311 is a flat surface to be placed on, and the lower surface 1221 is a flat surface to be placed on. The support surface 2311 is in contact with the lower surface 1221. The recess 2352 and the recess 2351 are not a space enclosed by the submount 230d and the second supporting member 122, but are connected to the outside.

[0202] Specifically, the recesses 2351 and 2352 are formed as follows: A protective metal film made of a metal such as Ti, Pt, or Au is formed on the first upper surface 231 side of the base material 236d of the submount 230d, and then a patterned metal layer (i.e., base layer 232) made of, for example, Cu, Ni, or Au is formed to a predetermined thickness. In other words, the tops of the recesses 2351 and 2352 are flush with the upper surface of the metal layer (i.e., base layer 232), and the bottoms of the recesses 2351 and 2352 are in contact with the protective metal film or the upper surface of the base material 236d.

[0203] 26 , second bonding members 233d for bonding the submount 230d to the second support member 122 are embedded in the recesses 2351 and 2352 of the submount 230d. The second bonding members 233d are made of a solder material such as SuAgCu. As shown in (c) of FIG. 26 , a portion of the upper surface of each of the two second bonding members 233d embedded in the two recesses 2351 and 2352 contacts the lower surface 1221 of the second support member 122.

[0204] The submount 230d also has a similar configuration below the third support member 123.

[0205] Furthermore, a film of, for example, Au is formed on the surface of the lower surface 1221 of the second supporting member 122 and the lower surface 1231 of the third supporting member 123, making the surface highly wettable to the second bonding member 233d.

[0206] The manufacturing method according to this modification is carried out as follows.

[0207] In the placement step shown in FIG. 26A, the lens unit 100 is placed at a predetermined position on the submount 230d. The flat surface (support surface 2311) is in contact with the lower surface 1221. At this time, the upper surface of the second bonding member 233d is preferably positioned slightly below the support surface 2311 (in the negative z-axis direction). In the alignment step shown in FIG. 26B, the lens unit 100 moves, for example, in the positive x-axis direction (in the direction of the hollow arrow). Because the support surface 2311 supports the lower surface 1221 and moves in contact with it partially or entirely, misalignment of the second support member 122 in the z-axis direction is unlikely to occur. The same is true for the third support member 123. Therefore, in this modification, misalignment of the first cylindrical lens 110 of the lens unit 100 in the z-axis direction is unlikely to occur during the alignment step.

[0208] Furthermore, in the fixing step shown in FIG. 26( c), the second bonding member 233d melts and then hardens, thereby fixing and bonding the position of the lens unit 100. At this time, the second bonding member 233d melts and hardens while the support surface 2311 and the lower surface 1221 are in partial or complete contact with each other. In other words, misalignment of the second support member 122 in the z-axis direction is unlikely to occur. More specifically, the second bonding member 233d expands in volume and flows as it melts. The molten second bonding member 233d wets and spreads from the side surfaces of the recesses 2351 and 2352 to the lower surface 1221 of the second support member 122. Even though the second bonding member 233d expands in volume, because the recesses 2351 and 2352 are not closed spaces, it penetrates between the support surface 2311 and the lower surface 1221, preventing the support surface 2311 and the lower surface 1221 from separating. At the same time, the second joining members 233d arranged in the recesses 2351 and 2352 between the submount 230d and the second supporting member 122 firmly fix the second supporting member 122 and the third supporting member 123 to the submount 230d.

[0209] For example, a study example will now be described.

[0210] 27 is a front view of a semiconductor laser device 1y according to the study example, more specifically, a view showing the semiconductor laser device 1y equivalent to an enlarged view of FIG.

[0211] The semiconductor laser device 1y differs from the semiconductor laser device 1 mainly in that a second bonding member 233y, which is a solder layer, is provided between the lower surface 1221 of the second support member 122 and the lower surface 1231 of the third support member 123 and the first upper surface 231 of the submount 230.

[0212] FIG. 27(a) is a front view of the lens unit 100 before it is fixed, and FIG. 27(b) is a front view of the lens unit 100 after it has been fixed in position and bonded.

[0213] Unlike the semiconductor laser device 1d according to Modification 4, the semiconductor laser device 1y according to the study example does not have a support surface 2311, and the first upper surface 231 and the lower surface 1221 are not in contact with each other. Therefore, when the second bonding member 233y melts, the second supporting member 122 is not supported, and the second supporting member 122 is fixed in a state in which the second supporting member 122 is pressed against the second bonding member 233y. Therefore, the thickness of the second bonding member 233y changes, and the second supporting member 122 (i.e., the lens unit 100) is misaligned in the z-axis direction.

[0214] As described above, in the semiconductor laser device 1d according to Modification 4, when the second bonding member 233d melts, the support surface 2311 supports the second support member 122, and the first upper surface 231 and the lower surface 1221 come into partial or complete contact with each other. Therefore, the position of the lower surface 1221 does not move downward relative to the first upper surface 231. In other words, the position of the second support member 122 is unlikely to shift in the z-axis direction. Therefore, in a light source module including such a semiconductor laser device 1d, the lens unit 100 (first cylindrical lens 110) can be easily adjusted to increase the coupling efficiency between the laser light L1 emitted from the semiconductor laser element 200 and the optical fiber 550. In other words, a light source module with high coupling efficiency is realized.

[0215] [Effects, etc.] The semiconductor laser device 1 according to the first embodiment includes a semiconductor laser element 200 that emits laser light L1, a first cylindrical lens 110, and a lens unit 100 that has an installation plane (lower surface 1221 and lower surface 1231). The semiconductor laser element 200 has an active layer. The laser light L1 is incident on the first cylindrical lens 110, and the first cylindrical lens 110 reduces the divergence angle of the laser light L1 in the fast axis direction. The installation plane is fixed to a first installation plane (first upper surface 231). A generatrix 115 of the first cylindrical lens 110 is inclined with respect to the first installation plane. The angle θ between the generatrix 115 and the active layer is |θ|<22.5°. In particular, in this embodiment, 0°<|θ|<22.5°.

[0216] In the semiconductor laser device 1, the generating line 115 is inclined with respect to the installation plane (first upper surface 231), and therefore the position of the lens unit 100 in the z-axis direction can be adjusted by moving the lens unit 100 in the x-axis direction along the installation plane (first upper surface 231).

[0217] 19A, in such a semiconductor laser device 1, it is easy to adjust the position of the lens portion 100 (first cylindrical lens 110) in order to increase the coupling efficiency of the light source module 10. In other words, when the light source module 10 is equipped with this semiconductor laser device 1, a light source module 10 with high coupling efficiency is realized.

[0218] In the first embodiment, the angle β between the bus 115 and the first installation plane (first upper surface 231) is 0°<|β|<45°. The angle β between the bus 115 and the installation plane (lower surface 1221 and lower surface 1231) is 0°<|β|<22.5°.

[0219] This allows the position of the lens unit 100 in the z-axis direction to be adjusted more precisely.

[0220] In the first embodiment, the angle β between the bus bar 115 and the first installation plane (first upper surface 231) may be 0.5°≦|β|≦2°. The angle β between the bus bar 115 and the installation plane (lower surface 1221 and lower surface 1231) may be 0.5°≦|β|≦2°.

[0221] This allows the position of the lens unit 100 in the z-axis direction to be adjusted more precisely.

[0222] The semiconductor laser device 1 according to the first embodiment includes a semiconductor laser element 200 that emits laser light L1, a first cylindrical lens 110, and a lens unit 100 having an installation plane (lower surface 1221 and lower surface 1231). The semiconductor laser element 200 has an active layer. The laser light L1 is incident on the first cylindrical lens 110, and the lens unit 100 reduces the divergence angle of the laser light L1 in the fast axis direction. The installation plane is fixed to a first installation plane (first upper surface 231). A generatrix 115 of the first cylindrical lens 110 is inclined with respect to the installation plane. The angle θ between the generatrix 115 and the active layer is |θ|<22.5°. In particular, in this embodiment, 0°<|θ|<22.5°.

[0223] In the semiconductor laser device 1, the generating line 115 is inclined with respect to the installation plane (lower surface 1221 and lower surface 1231), and therefore the position of the lens unit 100 in the z-axis direction can be adjusted by moving the installation plane (lower surface 1221 and lower surface 1231) of the lens unit 100 in the x-axis direction along the installation plane (first upper surface 231).

[0224] 19A, in such a semiconductor laser device 1, it is easy to adjust the position of the lens portion 100 (first cylindrical lens 110) in order to increase the coupling efficiency of the light source module 10. In other words, when the light source module 10 is equipped with this semiconductor laser device 1, a light source module 10 with high coupling efficiency is realized.

[0225] In the first embodiment, the angle β formed between the bus 115 and the installation plane (lower surface 1221 and lower surface 1231) is 0°<|β|<45°.

[0226] This allows the position of the lens unit 100 in the z-axis direction to be adjusted more precisely.

[0227] In the first embodiment, the angle β formed between the bus 115 and the installation plane (lower surface 1221 and lower surface 1231) is 0.5°≦|β|≦2°.

[0228] This allows the position of the lens unit 100 in the z-axis direction to be adjusted more precisely.

[0229] In the fourth modification of the first embodiment, the installation plane (lower surface 1221) and the first installation plane (support surface 2311) are in contact with each other partially or entirely.

[0230] This makes it difficult for the position of the second support member 122 to shift in the z-axis direction during the fixing step, for example.

[0231] In the fourth modification of the first embodiment, one or more recesses (for example, recesses 2351 and 2352) are provided in the first flat installation surface (support surface 2311).

[0232] As a result, for example, the second bonding member 233d is embedded in the recesses 2351 and 2352, and the second supporting member 122 and the third supporting member 123 are firmly fixed to the submount 230d.

[0233] In the semiconductor laser device 1 according to the first embodiment, the active layer is parallel to the first flat installation surface (support surface 2311).

[0234] This makes it possible to realize a semiconductor laser device 1 in which the angle θ and the angle β have the same value.

[0235] In the semiconductor laser device 1 according to the first embodiment, the active layer is parallel to the installation plane (the lower surface 1221 and the lower surface 1231).

[0236] This makes it possible to realize a semiconductor laser device 1 in which the angle θ and the angle β have the same value.

[0237] The semiconductor laser device 1 according to the first embodiment includes a submount 230 having a first upper surface 231 , and the semiconductor laser element 200 is placed above the first upper surface 231 .

[0238] This makes it possible to realize the semiconductor laser device 1 in which the semiconductor laser element 200 is disposed above the submount 230 .

[0239] In the semiconductor laser device 1 according to the first embodiment, the first flat installation surface is the first upper surface 231 .

[0240] This allows the first upper surface 231 of the submount 230 to be a flat surface on which the lens unit 100 is to be placed, and the position of the lens unit 100 (first cylindrical lens 110) can be easily adjusted by moving the lens unit 100 along the flat surface on which the lens unit 100 is to be placed (first upper surface 231). In other words, when the light source module 10 includes this semiconductor laser device 1, it is possible to realize a light source module 10 with high coupling efficiency.

[0241] In the semiconductor laser device 1a according to the first modification of the first embodiment, the first installation plane (upper surfaces 311 and 321) is installed above the active layer, and the installation plane (lower surface 1212) is installed above the active layer.

[0242] This allows the position of the lens unit 100a to be easily adjusted by moving the lens unit 100a along the installation plane (upper surfaces 311 and 321). In other words, when a light source module includes the semiconductor laser device 1a, a light source module with high coupling efficiency can be realized.

[0243] In the semiconductor laser device 1a according to the first modification of the first embodiment, the installation plane (lower surface 1212) is installed above the active layer.

[0244] This allows the position of the lens unit 100a to be easily adjusted by moving the installation plane (lower surface 1212) of the lens unit 100a along the installation plane (upper surfaces 311 and 321). In other words, when a light source module includes this semiconductor laser device 1a, a light source module with high coupling efficiency can be realized.

[0245] The semiconductor laser device 1a according to the first modification of the first embodiment includes a fixing member 300 having a first flat installation surface (top surfaces 311 and 321). The fixing member 300 is fixed to a submount 230.

[0246] This allows the position of the lens unit 100a to be easily adjusted by moving the lens unit 100a along the installation plane (upper surfaces 311 and 321). In other words, when a light source module includes the semiconductor laser device 1a, a light source module with high coupling efficiency can be realized.

[0247] In the semiconductor laser device 1 according to the first embodiment, the lens unit 100 includes a support member 120 having an installation plane. The support member 120 includes a bonding surface (lower surface 1211) to which the first cylindrical lens 110 is bonded. The support member 120 is fixed to a first installation plane (first upper surface 231).

[0248] This prevents the first cylindrical lens 110 from being directly bonded to the flat surface (first upper surface 231) on which it is to be placed. Therefore, in the alignment step, the position of the lens unit 100 can be adjusted without the collet touching the first cylindrical lens 110, thereby preventing problems such as foreign matter, such as dirt from the collet, from adhering to the first cylindrical lens 110.

[0249] In the semiconductor laser device 1 according to the first embodiment, the first cylindrical lens 110 has a first side surface 111 parallel to the generatrix 115 and a second side surface 112 facing away from the first side surface 111 and parallel to the generatrix 115. The bonding surface (lower surface 1211) is parallel to the generatrix 115 and is bonded to the first side surface 111 or the second side surface 112.

[0250] This allows the first cylindrical lens 110 and the support member 120 to be joined surface to surface (first side surface 111) (joint surface (lower surface 1211)), making it less likely that misalignment will occur in the z-axis direction compared to, for example, when the first cylindrical lens 110 and the support member 120 are joined point to point.

[0251] In the semiconductor laser device 1b according to the second modification of the first embodiment, the first cylindrical lens 110b has an inclined side surface (first side surface 111b) on the side facing the first installation plane, which is inclined with respect to the generatrix 115, and a side surface (second side surface 112) facing away from the inclined side surface. The inclined side surface is placed on the bonding surface (lower surface 1211b).

[0252] This allows the first cylindrical lens 110b and the support member 120b to be joined face to face (inclined side surface (first side surface 111b)) and face to face (joining surface (lower surface 1211b)), making it less likely that misalignment will occur in the z-axis direction compared to, for example, when the first cylindrical lens 110b and the support member 120b are joined point to point.

[0253] The light source module 10 according to the first embodiment includes a plurality of the above-described semiconductor laser devices. More specifically, the light source module 10 according to the first embodiment includes the semiconductor laser device 1 and semiconductor laser devices 2 to 6, each having the same configuration as the semiconductor laser device 1. The laser light emitted from the semiconductor laser element 200 included in each of the plurality of semiconductor laser devices is multiplexed.

[0254] As described above, the semiconductor laser device 1 is a device with high optical axis accuracy of the laser beam L1, and each of the semiconductor laser devices 2 to 6 having the same configuration is also a device with high optical axis accuracy of the laser beams L2 to L6. Therefore, the light source module 10 including the semiconductor laser device 1 and the semiconductor laser devices 2 to 6 can collect the multiple laser beams L1 to L6 without spatial overlapping with each other on the lens that collects the laser beams into the optical fiber 550, and is a module with high coupling efficiency.

[0255] The light source module 10 according to the first embodiment includes an airtight package that hermetically seals a plurality of semiconductor laser devices.

[0256] In the first embodiment, the case 501 corresponds to an airtight package, and a plurality of semiconductor laser devices are hermetically sealed by the case 501. For example, if foreign matter such as dirt adheres to the semiconductor laser element 200, the lens unit 100, and the flat surface on which the semiconductor laser device 1 is to be installed (first upper surface 231), the performance of the emitted laser light L1 may be degraded.

[0257] However, with the above configuration, the semiconductor laser element 200, the lens unit 100, and the flat surface on which they are placed (first upper surface 231) are protected from foreign matter such as dirt, thereby suppressing deterioration in the performance of the emitted laser light L1.

[0258] The manufacturing method according to the first embodiment is a method for manufacturing a light source module 10. The light source module 10 includes a semiconductor laser element 200 that emits laser light L1, a first installation plane (first upper surface 231), and a lens unit 100 that has a first cylindrical lens 110 and an installation plane (lower surface 1221 and lower surface 1231). The semiconductor laser element 200 has an active layer. The first cylindrical lens 110 reduces the divergence angle of the laser light L1 in the fast axis direction. The installation plane is fixed to the first installation plane. The manufacturing method includes a placement step, an alignment step, and a fixing step. In the placement step, the lens unit 100 is placed on the first installation plane so that the generatrix 115 of the first cylindrical lens 110 is inclined with respect to the first installation plane. In the alignment step, the laser light L1 emitted from the semiconductor laser element 200 is incident on the first cylindrical lens 110, and the placed lens unit 100 is moved in two mutually perpendicular directions parallel to the first installation surface. In the fixing step, the moved lens unit 100 is fixed to the first installation surface. In the placement step, the angle θ between the generatrix 115 and the active layer is |θ|<22.5°. In particular, in this embodiment, 0°<|θ|<22.5°.

[0259] In the light source module 10, the generatrix 115 is inclined with respect to the installation plane (first upper surface 231). Therefore, in the alignment step, the position of the lens unit 100 in the z-axis direction can be adjusted by moving the lens unit 100 in the x-axis direction along the installation plane (first upper surface 231).

[0260] 19A, in the light source module 10 manufactured by such a manufacturing method, it is easy to adjust the position of the lens unit 100 (first cylindrical lens 110) in order to increase the coupling efficiency of the light source module 10. In other words, such a manufacturing method realizes a light source module 10 with high coupling efficiency.

[0261] The manufacturing method according to the first embodiment is a method for manufacturing a light source module 10. The light source module 10 includes a semiconductor laser element 200 that emits laser light L1, a first installation plane (first upper surface 231), and a lens unit 100 that has a first cylindrical lens 110 and an installation plane (lower surface 1221 and lower surface 1231). The semiconductor laser element 200 has an active layer. The first cylindrical lens 110 reduces the divergence angle of the laser light L1 in the fast axis direction. The installation plane is fixed to the first installation plane. The manufacturing method includes a placement step, an alignment step, and a fixing step. In the placement step, the lens unit 100 is placed on the first installation plane so that the generatrix 115 of the first cylindrical lens 110 is inclined with respect to the installation plane. In the alignment step, the laser light L1 emitted from the semiconductor laser element 200 is incident on the first cylindrical lens 110, and the placed lens unit 100 is moved in two mutually perpendicular directions parallel to the first installation surface. In the fixing step, the moved lens unit 100 is fixed to the first installation surface. In the placement step, the angle θ between the generatrix 115 and the active layer is |θ|<22.5°. In particular, in this embodiment, 0°<|θ|<22.5°.

[0262] In the light source module 10, the generatrix 115 is inclined with respect to the installation plane (the lower surface 1221 and the lower surface 1231). Therefore, in the alignment step, the installation plane (the lower surface 1221 and the lower surface 1231) of the lens unit 100 is moved in the x-axis direction along the installation surface (the first upper surface 231), thereby adjusting the position of the lens unit 100 in the z-axis direction.

[0263] 19A, in the light source module 10 manufactured by such a manufacturing method, it is easy to adjust the position of the lens unit 100 (first cylindrical lens 110) in order to increase the coupling efficiency of the light source module 10. In other words, such a manufacturing method realizes a light source module 10 with high coupling efficiency.

[0264] In the manufacturing method according to the first embodiment, in the alignment step, the lens portion 100 is moved while the semiconductor laser element 200 emits the laser light L1.

[0265] This makes it easy to adjust the position of the lens unit 100 (first cylindrical lens 110) in the light source module 10. In other words, this manufacturing method realizes a light source module 10 with high coupling efficiency.

[0266] In the manufacturing method according to the first embodiment, the lens unit 100 has a support member 120. The support member 120 has a bonding surface (lower surface 1211) to which the first cylindrical lens 110 is bonded. The manufacturing method further includes a preparation step in which the first cylindrical lens 110 is bonded to the bonding surface (lower surface 1211), and the preparation step is performed before the placement step.

[0267] As a result, in the preparation step, the first cylindrical lens 110 is bonded to the support member 120 to form the lens unit 100. In the placement step, the lens unit 100, in which the first cylindrical lens 110 and the support member 120 are bonded together, can be placed on the first installation plane. This makes it easier to perform the placement step.

[0268] In the manufacturing method according to the first embodiment, the active layer is parallel to the first flat surface (first upper surface 231).

[0269] This makes it possible to realize a light source module 10 in which, for example, the angle θ and the angle β have the same value.

[0270] In the manufacturing method according to the first embodiment, the active layer is parallel to the installation plane (lower surface 1221 and lower surface 1231).

[0271] This makes it possible to realize a light source module 10 in which, for example, the angle θ and the angle β have the same value.

[0272] In the above description, the support member 120 is configured from different members, namely, the first support member 121, the second support member 122, and the third support member 123, but this is not limited to this. The support member 120 may be integrally molded from the same member. Furthermore, in the lens unit 100, the first cylindrical lens 110 and the support member 120 are different members, but this is not limited to this. For example, the support member 120 may be configured from glass and molded integrally with the first cylindrical lens 110.

[0273] Furthermore, in the method for manufacturing the light source module 10, the laser unit 20 is fixed on the second step 511b of the staircase base 510 of the case 501 in the preparation step, but this is not limited to this. In the preparation step, at least the lens section 100 and the laser unit 20 are manufactured and prepared. Then, after the placement step is performed, an alignment step and a fixing step may be performed using a temporary optical system to adjust and fix the position of the lens section 100 relative to the laser unit 20. The semiconductor laser device 1 configured through these preparation steps, placement step, alignment step and fixing step may be fixed on the second step 511b of the staircase base 510 of the case 501.

[0274] (Embodiment 2) The following describes embodiment 2. The following mainly describes the differences from embodiment 1, and the description of commonalities will be omitted or simplified.

[0275] [Configuration] First, the configuration of a light source module 10f according to the second embodiment will be described with reference to FIG.

[0276] 28 is a perspective view showing the overall configuration of a light source module 10f according to the present embodiment. The light source module 10f has the same configuration as the light source module 10 according to the first embodiment, except that it includes semiconductor laser devices 1f to 6f instead of the semiconductor laser devices 1 to 6.

[0277] Although the semiconductor laser devices 1f to 6f each have the same configuration, only the semiconductor laser device 1f will be described here.

[0278] FIG. 29 is a perspective view showing the configuration of a semiconductor laser device 1f according to this embodiment.

[0279] The semiconductor laser device 1f includes a semiconductor laser element 200, a submount 230, a first bonding member 240, a fixed base 250, and a lens portion 100f. The semiconductor laser element 200, the submount 230, and the first bonding member 240 may be collectively referred to as a laser unit 20f. The components included in the semiconductor laser device 1f will be described below.

[0280] The semiconductor laser element 200, the submount 230, and the first bonding member 240 have the same configurations as those in the first embodiment.

[0281] The fixed base 250 is a flat-plate-shaped mounting base on which the submount 230 is mounted. The fixed base 250 has a second upper surface 251, which is the upper surface of the flat plate. In this embodiment, the second upper surface 251 is a plane parallel to the xy plane. The submount 230 and the lens unit 100f are fixed above the second upper surface 251. The installation plane is the plane on which the lens unit 100f is fixed. In other words, in this embodiment, the installation plane is the second upper surface 251. Furthermore, since the base material 236 of the submount 230 is a parallel plate whose surface on the first upper surface 231 side is parallel to its opposite lower surface, the first installation plane is parallel to the active layer. In other words, the active layer is parallel to the first installation plane. The fixed base 250 is made of a material with high thermal conductivity, for example, a metal such as Cu, or a ceramic such as AlN or SiC.

[0282] As shown in FIG. 28, the fixed base 250 is installed above the second step 511 b of the first stage 511 of the staircase base 510 .

[0283] The lens unit 100f is a member having a support member 120f and a first cylindrical lens 110. In this embodiment, the first cylindrical lens 110 is provided above the support member 120f. The support member 120f will be described with reference to FIG.

[0284] FIG. 30 is a perspective view of a lens unit 100f according to the present embodiment.

[0285] The support member 120f includes a first support member 121f and a second support member 122f. The first support member 121f is a plate-like member including an upper surface 1211f parallel to the xy plane and a lower surface 1213f parallel to the xy plane. The second support member 122f is a member including an upper surface 1221f inclined with respect to the xy plane and a lower surface 1222f parallel to the xy plane. The second support member 122f is provided so that the lower surface 1222f contacts the upper surface 1211f of the first support member 121f. The area of ​​the upper surface 1211f that is not covered by the second support member 122f is a flange region 1214f. The flange region 1214f is used as a region that comes into contact with a collet or the like during an alignment step included in the manufacturing method.

[0286] In this embodiment, the first cylindrical lens 110 and the support member 120f are bonded together. As shown in Fig. 30, the second side surface 112 of the first cylindrical lens 110 and the upper surface 1221f of the second support member 122f are bonded together. That is, in this embodiment, the bonding surface included in the support member 120f is the upper surface 1221f included in the second support member 122f.

[0287] 29 , in this embodiment, the installation surface (second upper surface 251) is bonded to the lens unit 100f. The installation surface (second upper surface 251) is bonded to the lower surface 1213f of the first support member 121f included in the support member 120f. That is, in this embodiment, the installation surface bonded to the installation surface (second upper surface 251) is the lower surface 1213f. Note that a third bonding member 260, which is a solder layer, is provided between the installation surface (second upper surface 251) and the installation surface (lower surface 1213f), and the installation surface (second upper surface 251) and the installation surface (lower surface 1213f) are bonded together by the third bonding member 260.

[0288] In this embodiment, the installation plane (second upper surface 251), the installation plane (lower surface 1213f), and the active layer of the semiconductor laser device 200 are parallel to the xy plane. In addition, the junction surface (upper surface 1221f), the second side surface 112, and the generatrix 115 are parallel to each other and inclined with respect to the xy plane.

[0289] In other words, in this embodiment, the bus bar 115 is inclined with respect to the installation plane (second upper surface 251) and the active layer, and the angle β between the bus bar 115 and the installation plane (second upper surface 251) satisfies 0° < |β| < 22.5°, and the angle θ between the bus bar 115 and the active layer satisfies 0° < |θ| < 22.5°.

[0290] 31 to 34, an example of a manufacturing method for the light source module 10f will be described. Here, as an example, the vicinity of the semiconductor laser device 1f of the light source module 10f will be described in detail, but the other semiconductor laser devices 2f to 6f are also manufactured by a similar method.

[0291] 31 to 34 are schematic diagrams showing steps in a manufacturing method for the semiconductor laser device 1f and its vicinity of the light source module 10f according to this embodiment. Note that in the drawings showing the manufacturing method below, the installation direction, etc. may be indicated by dashed arrows.

[0292] As shown in FIGS. 31 to 34, the semiconductor laser device 1f is manufactured in the following order.

[0293] First, a preparatory step is performed.

[0294] 31 and 32 , in the preparation step, first, the lens unit 100f is manufactured. The second support member 122f is bonded to the first support member 121f, and then the first cylindrical lens 110 is bonded to the support member 120f (second support member 122f). More specifically, the upper surface 1221f of the second support member 122f is bonded to the second side surface 112 of the first cylindrical lens 110. This fixes the positional relationship between the first cylindrical lens 110, the first support member 121f, and the second support member 122f, and the lens unit 100f is manufactured.

[0295] 33 , before the lens unit 100f and the submount 230 are bonded together, the submount 230, on which the semiconductor laser element 200 and the first bonding member 240 are mounted, and the fixed base 250, on which the third bonding member 260 is mounted, are bonded together. In other words, before the lens unit 100f and the submount 230 are bonded together, the positional relationship between the laser unit 20f and the fixed base 250 is fixed. Then, the fixed base 250 is fixed to a predetermined position on the stepped base 510.

[0296] Next, an arrangement step is performed in which the lens unit 100f is arranged so that the laser light L1 emitted from the semiconductor laser element 200 is incident on the first cylindrical lens 110 and the generatrix 115 of the first cylindrical lens 110 is inclined with respect to the installation plane (the second upper surface 251).

[0297] Next, an alignment step is performed. The alignment step is a process of moving the lens unit 100f arranged in the arrangement step. More specifically, the alignment step is a process of moving the lens unit 100f in two mutually perpendicular directions parallel to the installation plane (second upper surface 251). Here, since the installation plane (second upper surface 251) is parallel to the xy plane, the lens unit 100f can be moved in the x-axis direction and the y-axis direction. The lens unit 100f can be moved along the installation plane (second upper surface 251), and here, the installation plane (lower surface 1213f) of the lens unit 100f moves relative to the installation plane (second upper surface 251).

[0298] In the alignment step, the lens unit 100f can be moved as a whole, i.e., the entire lens unit 100f can be moved while the positional relationship between the first cylindrical lens 110, the first support member 121f, and the second support member 122f is fixed.

[0299] In the alignment step, the position of the lens portion 100f is moved so as to increase the coupling efficiency of the emitted laser light L1, that is, the position of the lens portion 100f is adjusted so as to reduce the z-axis misalignment d between the generating line 115 and the light-emitting region 201.

[0300] Further, a fixing step is performed. For example, heat is applied to the third bonding member 260, thereby melting the solder material constituting the third bonding member 260 and bonding the lens unit 100f to the flat installation surface (second upper surface 251). By performing the fixing step, the semiconductor laser device 1f shown in FIG. 34 is manufactured.

[0301] In the second embodiment, similar to the effects shown in the first embodiment, by changing the position of the lens unit 100f in the x-axis direction, the z-axis deviation d between the generatrix 115 and the light-emitting region 201 can be changed, thereby improving the coupling efficiency. Furthermore, in adjusting the position of the lens unit 100f, Δz is always smaller than Δx. Therefore, when the position of the lens unit 100f in the x-axis direction is adjusted by manufacturing equipment, the position in the x-axis direction can be adjusted with an accuracy equal to the accuracy of the manufacturing equipment, and the position in the z-axis direction can be adjusted with an accuracy higher than the accuracy of the manufacturing equipment.

[0302] The following describes modifications 1 to 3 of embodiment 2. The following description focuses on the differences from embodiment 2, and the description of commonalities will be omitted or simplified.

[0303] 35 is a front view showing a configuration of a semiconductor laser device 1g according to a first modification of the second embodiment. More specifically, (a) of Fig. 35 is a front view before a lens unit 100g included in the semiconductor laser device 1g is moved, and (b) of Fig. 35 is a front view after the lens unit 100g has been moved.

[0304] The semiconductor laser device 1g according to this modification has the same configuration as the semiconductor laser device 1f according to the second embodiment, except that it includes a lens portion 100g instead of the lens portion 100f, and further includes a fixing member 300g.

[0305] The lens unit 100g is a member having a support member 120g and a first cylindrical lens 110. The support member 120g is configured by the second support member 122f according to the second embodiment.

[0306] The fixing member 300g is a flat member having a third upper surface 301g, which is a flat installation surface on which the lens unit 100g is fixed. The third upper surface 301g is parallel to the active layer and the xy plane. Here, the flat installation surface (third upper surface 301g) is bonded to the lower surface 1222f of the second support member 122f. Therefore, in this modification, the installation surface is the lower surface 1222f.

[0307] The fixing member 300g is formed by processing a substrate of a semiconductor material such as glass or silicon by partial etching, polishing, cutting, etc. Alternatively, it may be formed of a metal such as Fe or an Fe alloy, or Al. ２ O ３ , ZrO ２ , Si ３ N ４ Alternatively, it may be made of ceramic such as AlN.

[0308] In this modified example, the third bonding member 260 (not shown) is a layer for bonding the second upper surface 251 of the fixed base 250 and the fixed member 300g. Here, the submount 230 and the fixed member 300g are disposed on the second upper surface 251 of the fixed base 250. In addition, in the lens unit 100g, the first cylindrical lens 110 is bonded to the upper surface 1221f of the second support member 122f. In other words, the upper surface 1221f of the second support member 122f is the bonding surface.

[0309] In this modified example, the angle β between the busbar 115 and the installation plane (third upper surface 301g) satisfies 0°<|β|<22.5°, and the angle θ between the busbar 115 and the active layer satisfies 0°<|θ|<22.5°.

[0310] Next, a manufacturing method will be described. In a preparation step according to this modification, the first cylindrical lens 110 is bonded to the bonding surface (upper surface 1221f), and the fixing member 300g and the submount 230 are bonded to the fixing base 250. Furthermore, in a placement step, the lens unit 100g is placed at a predetermined position on the flat surface on which the fixing member 300g is to be placed.

[0311] The alignment step according to this modification is performed as follows.

[0312] The alignment step is a process of moving the lens unit 100g in two mutually perpendicular directions parallel to the installation plane (third upper surface 301g). Here, since the installation plane (third upper surface 301g) is parallel to the xy plane, the lens unit 100g can be moved in the x-axis direction and the y-axis direction. For example, compared to the lens unit 100g shown in FIG. 35(a), the lens unit 100g shown in FIG. 35(b) has moved further in the positive x-axis direction. The z-axis deviation d is also smaller.

[0313] As in embodiment 2, in the alignment step of this modified example, the lens unit 100g can be moved along the installation plane (third upper surface 301g), and here, the installation plane (lower surface 1222f) of the lens unit 100g moves relative to the installation plane (third upper surface 301g).

[0314] In this way, in the alignment step, the lens unit 100g can be moved as a whole, i.e., the entire lens unit 100g can be moved while the positional relationship between the first cylindrical lens 110 and the support member 120g (second support member 122f) is fixed.

[0315] In the first modification of the second embodiment, similarly to the effect shown in the second embodiment, by changing the position of the lens unit 100g in the x-axis direction, it is possible to change the deviation d in the z-axis direction between the generatrix 115 and the light-emitting region 201 and thereby improve the coupling efficiency. Furthermore, when the position of the lens unit 100g in the x-axis direction is adjusted by the manufacturing equipment, the position in the x-axis direction can be adjusted with an accuracy equal to the accuracy of the manufacturing equipment, and the position in the z-axis direction can be adjusted with an accuracy higher than the accuracy of the manufacturing equipment.

[0316] 36 is a front view showing a configuration of a semiconductor laser device 1h according to Modification 2 of Embodiment 2. More specifically, (a) of Fig. 36 is a front view showing the semiconductor laser device 1h before a lens unit 100h included in the semiconductor laser device 1h is moved, and (b) of Fig. 36 is a front view showing the semiconductor laser device 1h after the lens unit 100h has been moved.

[0317] The semiconductor laser device 1h according to this modification has the same configuration as the semiconductor laser device 1f according to the second embodiment, except that it includes a lens portion 100h instead of the lens portion 100f.

[0318] The lens unit 100h includes a first cylindrical lens 110b and a support member 120h. The first cylindrical lens 110b is disposed in the opposite direction to the z-axis (upside down) compared to the orientation in the second modification of the first embodiment.

[0319] The support member 120h is a flat-plate-shaped member. The support member 120h includes a bonding surface, which is a surface where the support member 120h is bonded to the first cylindrical lens 110b (more specifically, the first side surface 111b). The support member 120h includes an upper surface 1201h that is the upper surface of the flat-plate shape and parallel to the xy plane, and a lower surface 1202h that is the lower surface of the flat-plate shape and parallel to the xy plane. In this modification, the bonding surface is the upper surface 1201h.

[0320] As in the second embodiment, the installation plane in this modification is the second upper surface 251. As shown in FIG. 36 , the installation plane (second upper surface 251) and the lens unit 100h are bonded together. The installation plane (second upper surface 251) is bonded to the lower surface 1202h of the support member 120h. In other words, in this modification, the installation plane bonded to the installation plane (second upper surface 251) is the lower surface 1202h. Note that a third bonding member 260 (not shown), which is a solder layer, is provided between the installation plane (second upper surface 251) and the installation plane (lower surface 1202h), and the installation plane (second upper surface 251) and the installation plane (lower surface 1202h) are bonded together by the third bonding member 260.

[0321] Thus, in this modified example, the lens portion 100h has an inclined side surface (first side surface 111b) inclined with respect to the generatrix 115 on the side facing the installation plane (second upper surface 251), and an opposite side surface (second side surface) facing away from the inclined side surface.

[0322] The support member 120h is formed by processing a substrate made of a semiconductor material such as glass or silicon, by partial etching, polishing, cutting, etc. Alternatively, it may be made of a metal such as Fe or an Fe alloy, or Al. ２ O ３ , ZrO ２ , Si ３ N ４ Alternatively, it may be made of ceramic such as AlN.

[0323] In this modified example, the active layer of the semiconductor laser element 200, the installation plane (second upper surface 251), the installation plane (lower surface 1202h), the bonding surface (upper surface 1201h), and the first side surface 111b of the first cylindrical lens 110b are planes parallel to the xy plane.

[0324] Since the first side surface 111b is inclined with respect to the busbar 115, the busbar 115 is inclined with respect to the installation plane (second upper surface 251) and the active layer, and the angle β between the busbar 115 and the installation plane (second upper surface 251) satisfies 0° < |β| < 22.5°, and the angle θ between the busbar 115 and the active layer satisfies 0° < |θ| < 22.5°.

[0325] The alignment step according to this modification is performed as follows.

[0326] The alignment step is a process of moving the lens unit 100h in two mutually perpendicular directions parallel to the installation plane (second upper surface 251). Here, since the installation plane (second upper surface 251) is parallel to the xy plane, the lens unit 100h can be moved in the x-axis direction and the y-axis direction. For example, compared to the lens unit 100h shown in FIG. 36(a), the lens unit 100h shown in FIG. 36(b) has moved further in the positive x-axis direction. The z-axis deviation d is also smaller.

[0327] As in embodiment 2, in the alignment step of this modified example, the lens unit 100h can be moved along the installation plane (second upper surface 251), and here, the installation plane (lower surface 1202h) of the lens unit 100h moves relative to the installation plane (second upper surface 251).

[0328] In this way, in the alignment step, the lens unit 100h can be moved as a whole, i.e., the entire lens unit 100h can be moved while the positional relationship between the first cylindrical lens 110b and the support member 120h is fixed.

[0329] In the second modification of the second embodiment, similarly to the effect shown in the second embodiment, by changing the position of the lens unit 100h in the x-axis direction, it is possible to change the deviation d in the z-axis direction between the generatrix 115 and the light-emitting region 201 and improve the coupling efficiency. Furthermore, when the position of the lens unit 100h in the x-axis direction is adjusted by the manufacturing equipment, the position in the x-axis direction can be adjusted with an accuracy equal to the accuracy of the manufacturing equipment, and the position in the z-axis direction can be adjusted with an accuracy higher than the accuracy of the manufacturing equipment.

[0330] 37 is a front view showing a configuration of a semiconductor laser device 1j according to a third modification of the second embodiment. More specifically, (a) of Fig. 37 is a front view showing the semiconductor laser device 1j before a lens unit 100j included in the semiconductor laser device 1j is moved, and (b) of Fig. 37 is a front view showing the semiconductor laser device 1j after the lens unit 100j has been moved.

[0331] The semiconductor laser device 1j according to this modification has the same configuration as the semiconductor laser device 1f according to the second embodiment, except that it includes a lens portion 100j instead of the lens portion 100f, and further includes a fixing member 300g.

[0332] The lens unit 100j is a member that is configured only by the first cylindrical lens 110b, that is, the lens unit 100j does not have a support member.

[0333] In this modification, the installation plane is the third top surface 301g, as in modification 1. The installation plane (third top surface 301g) is bonded to the first side surface 111b of the first cylindrical lens 110b. In other words, the installation plane bonded to the installation plane (third top surface 301g) is the first side surface 111b. In other words, in this modification, the installation plane (first side surface 111b) is provided on the first cylindrical lens 110b. Furthermore, the active layer of the semiconductor laser element 200, the installation plane (third top surface 301g), and the installation plane (first side surface 111b) are all parallel to the xy plane.

[0334] As described above, in this modification, the lens unit 100j has an inclined side surface (first side surface 111b) that is inclined with respect to the generatrix 115 on the side facing the installation plane (third upper surface 301g), and an opposite side surface (second side surface 112) that faces away from the inclined side surface (first side surface 111b). The inclined side surface (first side surface 111b) is installed on the installation plane (third upper surface 301g).

[0335] The busbar 115 is inclined with respect to the installation plane (third upper surface 301g) and the active layer, and the angle β between the busbar 115 and the installation plane (third upper surface 301g) satisfies 0° < |β| < 22.5°, and the angle θ between the busbar 115 and the active layer satisfies 0° < |θ| < 22.5°.

[0336] The alignment step according to this modification is performed as follows.

[0337] The alignment step is a process of moving the lens unit 100j in two mutually perpendicular directions parallel to the installation plane (third upper surface 301g). Here, since the installation plane (third upper surface 301g) is parallel to the xy plane, the lens unit 100j can be moved in the x-axis direction and the y-axis direction. For example, compared to the lens unit 100j shown in FIG. 37(a), the lens unit 100j shown in FIG. 37(b) has moved further in the positive x-axis direction. The z-axis deviation d is also smaller.

[0338] As in embodiment 2, in the alignment step of this modified example, the lens unit 100j can be moved along the installation plane (third upper surface 301g), and here, the installation plane (first side surface 111b) of the lens unit 100j moves relative to the installation plane (third upper surface 301g).

[0339] In the third modification of the second embodiment, similarly to the effect shown in the second embodiment, by changing the position of the lens unit 100j in the x-axis direction, it is possible to change the deviation d in the z-axis direction between the generatrix 115 and the light-emitting region 201 and thereby improve the coupling efficiency. Furthermore, when the position of the lens unit 100j in the x-axis direction is adjusted by the manufacturing equipment, the position in the x-axis direction can be adjusted with an accuracy equal to the accuracy of the manufacturing equipment, and the position in the z-axis direction can be adjusted with an accuracy higher than the accuracy of the manufacturing equipment.

[0340] [Effects, etc.] The semiconductor laser device 1f according to the second embodiment includes a submount 230 having a first upper surface 231. A first flat installation surface (for example, a second upper surface 251) is installed below the first upper surface 231.

[0341] This makes it possible to realize a semiconductor laser device 1f in which the first installation plane is installed below the first upper surface 231.

[0342] The semiconductor laser device if according to the second embodiment includes a fixed base 250 having a second upper surface 251. The submount 230 is placed above the second upper surface 251. The semiconductor laser element 200 is placed above the first upper surface 231.

[0343] This allows the second upper surface 251 of the fixed base 250 to serve as a flat installation surface. Therefore, by moving the lens unit 100f along the flat installation surface (second upper surface 251), the position of the lens unit 100f (first cylindrical lens 110) can be easily adjusted. In other words, when the light source module 10f includes this semiconductor laser device 1f, it is possible to realize a light source module 10f with high coupling efficiency.

[0344] The semiconductor laser device 1g according to the first modification of the second embodiment includes a submount 230 having a first upper surface 231, a fixing member 300g having a third upper surface 301g, and a fixing base 250 having a second upper surface 251. The submount 230 and the fixing member 300g are placed above the second upper surface 251. The semiconductor laser element 200 is placed above the first upper surface 231.

[0345] As a result, for example, the third upper surface 301g of the fixing member 300 can be used as the installation plane. Therefore, by moving the lens unit 100g along the installation plane (third upper surface 301g), the position of the lens unit 100g (first cylindrical lens 110) can be easily adjusted. In other words, when a light source module includes this semiconductor laser device 1g, a light source module with high coupling efficiency can be realized.

[0346] In the semiconductor laser device 1j according to the third modification of the second embodiment, the installation plane (first side surface 111b) is provided on the first cylindrical lens 110b.

[0347] As a result, the lens unit 100j does not need to have a support member, for example, and the first cylindrical lens 110b of the lens unit 100j can be directly bonded to the flat surface on which it is to be placed (the third upper surface 301g). In other words, a semiconductor laser device 1j with a reduced number of parts can be realized.

[0348] In the semiconductor laser device 1j according to the third modification of the second embodiment, the lens unit 100j has an inclined side surface (first side surface 111b) inclined with respect to the generatrix 115 on the side facing the first installation plane (third upper surface 301g), and a side surface (second side surface 112) facing away from the inclined side surface. The inclined side surface is placed on the first installation plane.

[0349] As a result, the lens unit 100j does not need to have a support member, for example, and the first cylindrical lens 110b of the lens unit 100j can be directly bonded to the flat installation surface (the third upper surface 301g) via the inclined side surface (the first side surface 111b). In other words, a semiconductor laser device 1j with a reduced number of parts can be realized.

[0350] (Embodiment 3) The following describes embodiment 3. The following mainly describes the differences from embodiment 1, and the description of commonalities will be omitted or simplified.

[0351] [Configuration] First, the configuration of a light source module 10k according to the third embodiment will be described with reference to FIG.

[0352] FIG. 38 is a perspective view showing a portion of a light source module 10k according to the present embodiment. The light source module 10k has the same configuration as the light source module 10 according to the first embodiment, except that the light source module 10k includes semiconductor laser devices 1k and 2k instead of the semiconductor laser devices 1 and 2, and four semiconductor laser devices each having the same configuration as the semiconductor laser device 1k instead of the semiconductor laser devices 3 to 6. Note that FIG. 38 illustrates only the semiconductor laser devices 1k and 2k, and the SAC lens 600 and the reflecting mirror 700 through which the laser beams L1 and L2 emitted from the semiconductor laser devices 1k and 2k pass, respectively, among the components included in the light source module 10k. However, the light source module 10k also includes SAC lenses 600 and reflecting mirrors 700 corresponding to the four semiconductor laser devices. For simplicity, the coupling portion with the optical fiber 550 is omitted.

[0353] The semiconductor laser devices 1k and 2k have the same configuration as the four semiconductor laser devices described above, but here, only the semiconductor laser device 1k will be described.

[0354] The semiconductor laser device 1k is a device that includes the semiconductor laser device 1 and a second cylindrical lens 110k. That is, the semiconductor laser device 1k is provided with two lenses, a first cylindrical lens 110 and a second cylindrical lens 110k. The second cylindrical lens 110k is a beam correction lens. The semiconductor laser device 1k is a device that further includes a first stage 511 of a staircase base 510. That is, in this embodiment, the first stage 511 is not a component provided in the staircase base 510, but a component provided in the semiconductor laser device 1k.

[0355] 38, the light source module 10k is a module including the components of the light source module 10 according to the first embodiment and further including a plurality of second cylindrical lenses 110k. Each of the plurality of second cylindrical lenses 110k is disposed on a respective one of a plurality of stages, and laser light emitted from each of the plurality of semiconductor laser elements 200 enters and exits the respective second cylindrical lenses 110k. In this embodiment, the flat surface on which the light is to be placed is the first upper surface 231, as in the first embodiment.

[0356] The second cylindrical lens 110k is incident on the laser light L1 emitted from the first cylindrical lens 110. The second cylindrical lens 110k corrects the beam distribution of the incident laser light L1 and emits the corrected laser light.

[0357] The second cylindrical lens 110k is a cylindrical lens having a power axis and a non-power axis. The power axis and the non-power axis are arranged perpendicular to each other. The second cylindrical lens 110k has a convex or concave curved surface on the power axis. That is, the second cylindrical lens 110k has a second cylindrical surface, which is the surface of a convex or concave cylinder. The second cylindrical lens 110k also has an incident surface 117k onto which the laser light L1 is incident and an exit surface 116k from which the laser light L1 is emitted. The second cylindrical surface is also the surface with the smaller radius of curvature of the incident surface 117k or the exit surface 116k.

[0358] The second cylindrical lens 110k according to this embodiment is a plano-convex cylindrical lens having a planar incident surface 117k and an exit surface 116k that is the surface of a convex cylinder. The incident surface 117k of the second cylindrical lens 110k according to this embodiment is a flat surface parallel to the zx plane. The power axis of the second cylindrical surface of the exit surface 116k is inclined with respect to the fast axis of the laser light L1 emitted from the semiconductor laser element 200. The second cylindrical lens 110k also has a bottom surface parallel to the xy plane and is mounted on the first stage 511a of the first stage 511. In other words, the second mounting plane on which the second cylindrical lens 110k is fixed is the first stage 511a.

[0359] The second cylindrical lens 110k is a member made of an inorganic transparent material such as glass, and has an incident surface 117k and an exit surface 116k coated with an anti-reflection coating film that matches the wavelength of the laser light L1. The bottom surface of the second cylindrical lens 110k is fixed to the first step 511a via a bonding member such as a solder layer.

[0360] The relationship between the generatrix 115k of the second cylindrical lens 110k and the generatrix 115 of the first cylindrical lens 110 will be described with reference to FIG.

[0361] Fig. 39 is a front view of the first cylindrical lens 110 and the second cylindrical lens 110k according to this embodiment. More specifically, (a) of Fig. 39 is a front view of the first cylindrical lens 110, and (b) of Fig. 39 is a front view of the second cylindrical lens 110k.

[0362] As explained in the first embodiment and the like, the generatrix 115 of the first cylindrical lens 110 is inclined with respect to the installation plane (first upper surface 231). Since the installation plane (first upper surface 231), the active layer, and the xy plane are parallel, the generatrix 115 is inclined with respect to the active layer of the semiconductor laser element 200 and the xy plane. In this embodiment, as shown in FIG. 39( a), the generatrix 115 is inclined clockwise at an angle β with respect to the installation plane (first upper surface 231) and the xy plane. Note that there is no problem if the generatrix 115 is inclined counterclockwise. In other words, there is no problem if the value of β is a negative value.

[0363] The second cylindrical lens 110k has a generatrix 115k. The generatrix 115k is a straight line along the apex of the convex cylinder surface that is the emission surface 116k. The generatrix 115k of the second cylindrical lens 110k according to this embodiment is inclined with respect to the second installation plane (first step 511a), that is, the xy plane. Because the second installation plane (first step 511a), the active layer, and the xy plane are parallel, the generatrix 115k is inclined with respect to the active layer of the semiconductor laser element 200 and the xy plane.

[0364] In this embodiment, the generatrix 115k of the second cylindrical lens 110k is tilted counterclockwise at an angle α with respect to the second installation plane (first stage 511a) and the xy plane, as shown in Figure 39(b). Note that the generatrix 115k may also be tilted clockwise. In other words, there is no problem even if the value of α is a negative value.

[0365] Here, since the bus 115k is inclined with respect to the second installation plane, the condition 0°<|α| is satisfied. Note that it is sufficient if 0°<|α|<22.5°, and the optimal value of α depends on β.

[0366] As described above, the semiconductor laser device 1k includes the first cylindrical lens 110 and the second cylindrical lens 110k. Furthermore, the direction in which the generatrix 115 of the first cylindrical lens 110 is inclined with respect to the installation plane (first upper surface 231) is opposite to the direction in which the generatrix 115k of the second cylindrical lens 110k is inclined with respect to the second installation plane (first step 511a).

[0367] In this embodiment, the laser light L1 emitted from the semiconductor laser element 200 is incident on the first cylindrical lens 110. The laser light L1 emitted from the first cylindrical lens 110 is a quasi-collimated laser light with a divergence angle of −1° to +1°.

[0368] The laser beam L1 emitted from the first cylindrical lens 110 is then incident on the incident surface 117k of the second cylindrical lens 110k. The second cylindrical lens 110k slightly narrows the divergence angle of the incident laser beam L1 on the fast axis, thereby collimating the laser beam L1. The laser beam L1 emitted from the exit surface 116k of the second cylindrical lens 110k then travels through the SAC lens 600, the reflecting mirror 700, and the condenser lens 800 to reach the optical fiber 550.

[0369] 38 also shows beam spots B1 and B2 of the laser light L1. The beam spot B1 is the shape of the laser light L1 emitted from the first cylindrical lens 110, and the beam spot B2 is the shape of the laser light L1 emitted from the second cylindrical lens 110k.

[0370] Here, the beam spots B1 and B2 will be described using Figure 18 of the first embodiment. As shown in Figure 18, in the light source module 10 that does not include the second cylindrical lens 110k, distortion occurs in the light intensity distribution of the laser beams L1 to L6, that is, it is clear that the beam spot of the laser beam L1 has a shape that rises to the right. This is due to the occurrence of aberrations caused by the generatrix 115 being inclined with respect to the active layer, as explained above, and the left-right reversal caused by the reflecting mirror 700.

[0371] However, in this embodiment, the second cylindrical lens 110k is provided, and the direction in which the generatrix 115 is inclined with respect to the installation plane (first upper surface 231) is opposite to the direction in which the generatrix 115k is inclined with respect to the second installation plane (first step 511a). Therefore, it is considered that the distortion of the light intensity distribution due to the aberration caused by the first cylindrical lens 110 is eliminated by the second cylindrical lens 110k having the generatrix 115k inclined in the opposite direction. In other words, while the beam spot B1 shown in FIG. 38 has a right-shoulder-downward shape in front view, the beam spot B2 of the laser light L1 that passes through the second cylindrical lens 110k is considered to approach a shape parallel to the xy plane. As a result, it is expected that the coupling efficiency of the light source module 10k will be improved.

[0372] Next, the relationship between the angle θ and the angle α will be described with reference to FIG.

[0373] 40 is a diagram showing the relationship between the angles θ and α and the coupling efficiency according to this embodiment. At this time, the active layer is parallel to the installation plane, i.e., φ=0°, and therefore θ=β. Fig. 40 shows the results of simulation calculations of the coupling efficiency when the angle α is changed, with the angle θ as a parameter.

[0374] Figure 40(a) shows the relationship between the angle α and the coupling efficiency when the angle θ is θ = 2°. Figure 40(b) shows the relationship between the angle α and the coupling efficiency when the angle θ is θ = 3°. Figure 40(c) shows the relationship between the angle α and the coupling efficiency when the angle θ is θ = 4°. In all of Figures 40(a), (b), and (c), the coupling efficiency when the angle α is α = 0° is normalized to 1.

[0375] Furthermore, Figure 41A is a diagram showing a table illustrating the simulation conditions of Figure 40. As shown in Figure 41A, in the simulation of Figure 40, the peak wavelength of the semiconductor laser element 200 is 450 nm, and the width Ws of the light-emitting region 201 is 100 μm. The effective focal length F1 and distance BFL of the first cylindrical lens 110 are 0.38 mm and 0.09 mm, respectively, the effective focal length of the second cylindrical lens 110k is 38.1 mm, the effective focal length of the SAC lens 600 is 13.5 mm, and the effective focal length of the focusing lens 800 is 7.3 mm. The core diameter and numerical aperture NA of the optical fiber 550 are 100 μm and 0.22, respectively. The simulation was performed under the above conditions with no misalignment of the optical elements.

[0376] As shown in FIG. 40 , regardless of the angle θ, the coupling efficiency increases and reaches a maximum value as the angle α increases from 0°. When θ = 2°, the coupling efficiency is highest when α = 15°. When θ = 2°, the coupling efficiency is highest when α = 18°. When θ = 4°, the coupling efficiency is highest when α = 20°. In other words, optimizing the angle α for θ = 2° to 4° can improve the coupling efficiency of the semiconductor laser device 1k. As described above, in this embodiment, it is believed that the distortion of the light intensity distribution due to aberration caused by the first cylindrical lens 110 is eliminated by the second cylindrical lens 110k having the generatrix 115k tilted in the opposite direction. In other words, it is believed that the second cylindrical lens 110k causes the beam spot B2 of the laser light L1 to approach a shape parallel to the xy plane, thereby improving the coupling efficiency of the semiconductor laser device 1k.

[0377] Next, using FIG. 41B , we will explain the effect on coupling efficiency when a second cylindrical lens 110k with an inclined generatrix 115k is placed in a light source module 10k. FIG. 41B shows the change in coupling efficiency when the lens unit 100 in the light source module 10k is moved in the x-axis direction. The coupling efficiency is set to 1 when the angles θ and α are 0 and all optical components of the light source module 10k are optimally positioned. Assume now that the angle θ of the generatrix 115 of the first cylindrical lens 110 is 3° and is shifted 2 μm in the negative z-axis direction from the optimal position. In this case, the coupling efficiency is 0.5 or less, and in order to increase the coupling efficiency, the lens unit 100 is moved in the x-axis direction in an alignment step. In FIG. 41B , a comparison is made between the case where the angle α of the generatrix 115k of the second cylindrical lens 110k is 0° and the case where it is 18°. The second cylindrical lens 110k is fixed to the first stage 511 before the alignment step of the lens unit 100. Even when the angle α is 0°, the coupling efficiency can be increased by moving the lens unit 100 in the positive x-axis direction, and the coupling efficiency reaches its maximum value when the x-axis direction is moved by 38 μm. Furthermore, the range of 90% intensity from the maximum value is -20 μm to +20 μm, which is smaller than the effect of moving the lens unit 100 in the z-axis direction. Even at the maximum value, the coupling efficiency is approximately 0.8, and the effect of the angle θ of the lens unit 100 is present. On the other hand, when the second cylindrical lens 110k with an angle α of 18° is positioned, the maximum value increases to approximately 0.9, and the range of 90% intensity from the maximum value is also -18 μm to +18 μm. Therefore, by using the light source module 10k configured in this embodiment, a light source module 10k with high coupling efficiency can be realized.

[0378] Next, an alignment step included in the manufacturing method according to this embodiment will be described. The alignment step also includes a process of moving the second cylindrical lens 110k. In the alignment step, the second cylindrical lens 110k can be moved in two directions parallel to the first stage 511a on which the second cylindrical lens 110k is installed. Because the first stage 511a is a plane parallel to the xy plane, the two directions are directions perpendicular to each other, such as the x-axis direction and the y-axis direction.

[0379] [Modification of Embodiment 3] A modification of Embodiment 3 will be described below. The following description will focus on differences from Embodiment 3, and descriptions of commonalities will be omitted or simplified.

[0380] First, the configuration of a light source module 10m according to a modification of the third embodiment will be described with reference to FIG.

[0381] FIG. 42 is a perspective view showing a portion of a light source module 10m according to this modification. The light source module 10m has the same configuration as the light source module 10k according to the third embodiment, except that it includes semiconductor laser devices 1m and 2m instead of the semiconductor laser devices 1k and 2k, and includes four semiconductor laser devices each having the same configuration as the semiconductor laser device 1m instead of the four semiconductor laser devices each having the same configuration as the semiconductor laser device 1k. Note that FIG. 42 illustrates only the semiconductor laser devices 1m and 2m, as well as the SAC lens 600 and the reflecting mirror 700 through which the laser beams L1 and L2 emitted from the semiconductor laser devices 1m and 2m pass, respectively, among the components of the light source module 10m. However, the light source module 10m also includes SAC lenses 600 and reflecting mirrors 700 corresponding to the four semiconductor laser devices. For simplicity, the coupling portion with the optical fiber 550 is omitted.

[0382] The semiconductor laser devices 1m and 2m have the same configuration as the four semiconductor laser devices described above, but here, only the semiconductor laser device 1m will be described.

[0383] The semiconductor laser device 1m is a device that includes the lens section 100f and laser unit 20f described in the second embodiment, and the second cylindrical lens 110k described in the third embodiment. The semiconductor laser device 1m is also a device that includes a first stage 511 of a staircase base 510. That is, in this modification, the first stage 511 is not a component provided on the staircase base 510, but a component provided on the semiconductor laser device 1m. In other words, the semiconductor laser device 1m has the same configuration as the semiconductor laser device 1f according to the second embodiment, except that it does not include a fixed base 250 and that it includes the second cylindrical lens 110k and the first stage 511.

[0384] As described above, since the fixed base 250 is not provided, the lens section 100f and the laser unit 20f included in the semiconductor laser device 1m are placed and joined to the second stage 511b of the first stage 511. Note that the semiconductor laser device 1m may be configured to include the fixed base 250 like the semiconductor laser device 1k.

[0385] The lens portion 100f is joined to the second stage 511b by a joining layer such as a solder layer. The laser unit 20f is also joined to the second stage 511b by a joining layer such as a solder layer.

[0386] As described above, the installation plane is the plane on which the lens unit 100f is fixed, and therefore in this case it is the second step 511b, which is a plane parallel to the xy plane.

[0387] As in embodiment 3, the direction in which the generatrix 115 of the first cylindrical lens 110 is inclined relative to the installation plane (second stage 511b) is opposite to the direction in which the generatrix 115k of the second cylindrical lens 110k is inclined relative to the second installation plane (first stage 511a).

[0388] 40, in this modification as well, the coupling efficiency of the semiconductor laser device 1m can be improved by optimizing the angle α when θ is 2° to 4°. Since the semiconductor laser device 1m is provided with the second cylindrical lens 110k, the beam spot B2 of the laser light L1 is closer to a shape parallel to the xy plane compared to the beam spot B1 of the laser light L1, and therefore the coupling efficiency of the semiconductor laser device 1m is improved.

[0389] [Effects, etc.] The semiconductor laser device 1k according to the third embodiment further includes a second cylindrical lens 110k and a second installation plane (first stage 511a). The laser light L1 emitted from the first cylindrical lens 110 is incident on the second cylindrical lens 110k, and the second cylindrical lens 110k reduces the divergence angle of the laser light L1 in the fast axis direction. The second cylindrical lens 110k is fixed to the second installation plane (first stage 511a). A generatrix 115k of the second cylindrical lens 110k is inclined with respect to the second installation plane (first stage 511a). The inclination direction of the generatrix 115 of the first cylindrical lens 110 with respect to the first installation plane (first upper surface 231) is opposite to the inclination direction of the generatrix 115k of the second cylindrical lens 110k with respect to the second installation plane (first stage 511a).

[0390] As a result, the second cylindrical lens 110k eliminates distortion of the light intensity distribution due to aberration caused by the first cylindrical lens 110, and in other words, the beam spot B2 of the laser light L1 approaches a shape parallel to the xy plane. Therefore, as shown in Figure 40, by optimizing the angle α when θ = 1° to 4°, it is possible to realize a semiconductor laser device 1k with improved coupling efficiency.

[0391] (Fourth Embodiment) The following describes a fourth embodiment, focusing on differences from the second embodiment, and omitting or simplifying the description of commonalities.

[0392] [Configuration] First, the configuration of a semiconductor laser device in according to the fourth embodiment will be described with reference to FIG.

[0393] 43 is a perspective view showing a semiconductor laser device 1n according to the present embodiment. The light source module according to the present embodiment has the same configuration as the light source module 10f according to the second embodiment, except that the light source module according to the present embodiment includes the semiconductor laser device 1n instead of the semiconductor laser devices 1f to 6f, and five semiconductor laser devices each having the same configuration as the semiconductor laser device 1n.

[0394] The semiconductor laser device 1n and the above five semiconductor laser devices have the same configuration, but here, only the semiconductor laser device 1n will be described.

[0395] The semiconductor laser device In includes a laser unit 20f (a semiconductor laser element 200, a submount 230, and a first bonding member 240), a fixed base 250, a lens portion 100n, and a fixing member 300n. The components of the semiconductor laser device In will be described below.

[0396] As in the second embodiment, the laser unit 20f is fixed above the second upper surface 251 of the fixed base 250. In the present embodiment, the lens unit 100n is fixed above the second upper surface 251 of the fixed base 250 via a fixing member 300n.

[0397] Furthermore, the lens unit 100n and the fixing member 300n will be described with reference to FIG.

[0398] 44 is an exploded front view of the lens unit 100n and the fixing member 300n according to the present embodiment. In FIG. 44, the installation direction and the like are indicated by dashed arrows.

[0399] The lens unit 100n is a member having a first cylindrical lens 110 and a support member 120n. The first cylindrical lens 110 according to this embodiment has the same shape and the same constituent materials as those of embodiment 1. The first cylindrical lens 110 according to this embodiment has the same configuration as the first cylindrical lens 110 according to embodiment 1, except that the generatrix 115 is parallel to the active layer of the semiconductor laser element 200 and the xy plane.

[0400] The support member 120n is a member including an upper surface 121n located closer to the positive side of the z-axis and parallel to the xy plane, and a lower surface 122n located closer to the negative side of the z-axis and inclined relative to the xy plane. The support member 120n is formed by processing a substrate made of a semiconductor material such as glass or silicon, for example, by partial etching, polishing, or cutting. It may also be formed of a metal such as Fe or an Fe alloy, or Al. ２ O ３ , ZrO ２ , Si ３ N ４ Alternatively, the upper surface 121n may be made of a ceramic such as AlN. The upper surface 121n is a surface bonded to the first cylindrical lens 110 (more specifically, the second side surface 112) and is a bonding surface according to this embodiment. The bonding surface (upper surface 121n) is bonded to the first side surface 111 or the second side surface 112, but here it is bonded to the second side surface 112. The bonding surface (upper surface 121n) is a surface parallel to the first side surface 111, the second side surface 112, and the generatrix 115. The lower surface 122n is a surface bonded to the fixing member 300n.

[0401] The fixing member 300n includes a first fixing member 310n and a second fixing member 320n. The first fixing member 310n and the second fixing member 320n are made of, for example, the same material as that of the support member 120n.

[0402] The first fixing member 310n includes a third upper surface 311n located closer to the positive side of the z-axis and inclined with respect to the xy-plane, and a lower surface 312n located closer to the negative side of the z-axis and parallel to the xy-plane. The installation plane in this embodiment is the third upper surface 311n, which is the plane to which the lens unit 100n (more specifically, the lower surface 122n of the support member 120n) is fixed. The installation plane, which is the plane to which the lens unit 100n is bonded to the installation plane (third upper surface 311n), is the lower surface 122n of the support member 120n.

[0403] The installation plane (lower surface 122n) and the installation plane (third upper surface 311n) are parallel to each other. Also in this embodiment, the active layer of the semiconductor laser device 200 is parallel to the xy plane. The installation plane (lower surface 122n) and the installation plane (third upper surface 311n) are inclined with respect to the xy plane, i.e., they are also inclined with respect to the active layer. The angle φ between the active layer and the installation plane is equal to the angle β between the generatrix and the installation plane.

[0404] The second fixing member 320n is a flat member having an upper surface 321n and a lower surface 322n parallel to the xy plane. The upper surface 321n of the second fixing member 320n is joined to the lower surface 312n of the first fixing member 310n, and the lower surface 322n of the second fixing member 320n is joined to the second upper surface 251 of the fixing base 250.

[0405] In this manner, in this embodiment, the submount 230 and the fixing member 300 n are placed on the second upper surface 251 of the fixed base 250 .

[0406] Next, the degree of inclination of the installation plane (third upper surface 311n) will be described. Angle β is shown in Figure 44. Angle β is the angle between the xy plane and the installation plane (third upper surface 311n). In this embodiment, angle β between bus 115 and the installation plane satisfies 0°<|β|<45°.

[0407] 45 to 48A, an example of a method for manufacturing the light source module according to this embodiment will be described. Here, as an example, the vicinity of the semiconductor laser device 1n of the light source module according to this embodiment will be described in detail, but the other five semiconductor laser devices are also manufactured by the same method.

[0408] 45, 46, 47, and 48A are schematic diagrams showing steps in a manufacturing method for the semiconductor laser device 1n and its vicinity of the light source module according to this embodiment. Note that, in the drawings showing the manufacturing method below, the installation direction, etc. may be indicated by dashed arrows.

[0409] As shown in FIGS. 45 to 48A, the semiconductor laser device 1n is manufactured in the following order.

[0410] First, a preparatory step is performed.

[0411] In the preparation step, first, the lens unit 100n is manufactured as shown in Fig. 45. The first cylindrical lens 110 is bonded to the support member 120n. This fixes the positional relationship between the first cylindrical lens 110 and the support member 120n, and the lens unit 100n is manufactured.

[0412] 46, the first fixing member 310n is bonded to the second fixing member 320n to manufacture the fixing member 300n. Although not shown, the manufactured fixing member 300n and the laser unit 20f are bonded to the second upper surface 251 of the fixed base 250. This fixes the positional relationship between the fixing member 300n, the laser unit 20f, and the fixing member 300n. Here, as shown in FIG. 47, before the lens section 100n and the fixing member 300n are bonded, the positional relationship between the first cylindrical lens 110 and the support member 120n is fixed, and the positional relationship between the fixing member 300n, the laser unit 20f, and the fixing member 300n is also fixed.

[0413] This is followed by a placement step.

[0414] 47, a step of arranging the lens unit 100n is performed. Here, the step of arranging the lens unit 100n is performed so that the laser light L1 emitted from the semiconductor laser element 200 is incident on the first cylindrical lens 110 and the generatrix 115 of the first cylindrical lens 110 is inclined with respect to the installation plane (the third upper surface 311n).

[0415] More specifically, in the arranging step, the lens unit 100n is arranged so that the lower surface 122n of the support member 120n, which is the installation plane, is in contact with the third upper surface 311n of the first fixing member 310n, which is the installation plane. At this time, the lens unit 100n is arranged so that the laser light L1 is incident on the first cylindrical lens 110 and so that the generatrix 115 is inclined with respect to the installation plane (third upper surface 311n). Because the installation plane (third upper surface 311n) on which the lens unit 100n is arranged is inclined with respect to the xy plane and because the upper surface 121n on which the first cylindrical lens 110 is arranged is parallel to the xy plane, the lens unit 100n can be arranged so that the generatrix 115 is inclined with respect to the installation plane (third upper surface 311n). In this case, the angle φ formed between the active layer and the mounting plane (third upper surface 311n) is equal to the angle β formed between the busbar 115 and the mounting plane. The busbar 115 and the active layer are parallel to each other, and the angle θ formed between the busbar 115 and the active layer is 0°.

[0416] Even after this placement step is completed, the lens unit 100 n and the fixing member 300 n are not yet joined together, meaning that the positions of the lens unit 100 n and the fixing member 300 n are not fixed to each other. At this stage, the lens unit 100 n can be moved relative to the position of the fixing member 300 n.

[0417] Next, as shown in Fig. 48A, an alignment step and a fixing step are performed. Fig. 48A (a) is a front view before the lens unit 100n is moved, and Fig. 48A (b) is a front view after the lens unit 100n has been moved. Fig. 48A (c) is a front view after the lens unit 100n has been moved and bonded. First, the alignment step is performed.

[0418] The alignment step is a step of moving the lens unit 100 n arranged in the arrangement step. More specifically, the alignment step is a step of moving the lens unit 100 n in two mutually perpendicular directions parallel to the installation plane (third upper surface 311 n). The lens unit 100 n can be moved along the installation plane (third upper surface 311 n), and here, the installation plane (lower surface 122 n) of the lens unit 100 n moves relative to the installation plane (third upper surface 311 n).

[0419] In the alignment step, the lens unit 100 n can be moved as a unit, i.e., the entire lens unit 100 n can be moved while the positional relationship between the first cylindrical lens 110 and the support member 120 n is fixed.

[0420] In the alignment step, the position of the lens unit 100n is moved, i.e., the position of the lens unit 100n is adjusted, so as to increase the coupling efficiency of the emitted laser light L1. In this embodiment, the lens unit 100n is moved rightward (positive direction of the x-axis) along the installation plane (third upper surface 311n), thereby moving the generatrix 115 downward, i.e., in the negative direction of the z-axis. In addition, when viewed from the front, the generatrix 115 approaches the light-emitting region 201. In other words, the displacement d in the z-axis direction between the generatrix 115 and the light-emitting region 201 is reduced by moving the lens unit 100n rightward (positive direction of the x-axis) along the installation plane (third upper surface 311n).

[0421] Here, for example, in this alignment step, it is preferable to move the lens portion 100n while the semiconductor laser element 200 is emitting the laser light L1.

[0422] Next, a fixing step is performed. The fixing step shown in (c) of FIG. 48A is a process of bonding the lens unit 100n, which was moved in the alignment step, to the installation plane (third upper surface 311n). In this embodiment, a second bonding member 233 is applied and cured so as to connect the third upper surface 311n of the first fixing member 310n to the side surface of the support member 120n, and the lens unit 100n is fixed to the fixing member 300n. At this time, because the installation plane and the installation plane are in partial or complete contact, the lens unit 100n does not shift in the z-axis direction, and the lens unit 100n can be fixed with high coupling efficiency.

[0423] By performing the fixing step, the semiconductor laser device in is manufactured.

[0424] As described above, the method for manufacturing the light source module according to this embodiment is a method including a placement step, an alignment step, and a fixing step.

[0425] In the semiconductor laser device 1n according to the fourth embodiment, when the angle β between the generatrix 115 and the installation plane (third upper surface 311n) satisfies 0°<|β|<45°, the same effect as that of the semiconductor laser device 1 according to the first embodiment can be obtained. When the angle β satisfies 0°<|β|<45°, when the lens unit 100n moves along the installation plane (third upper surface 311n), Δz / Δx becomes less than 1 (see FIGS. 12 and 14 ). That is, when the position of the lens unit 100n is adjusted, Δz is always smaller than Δx. Therefore, when the position of the lens unit 100n in the x-axis direction is adjusted by manufacturing equipment, the position in the x-axis direction can be adjusted with an accuracy equal to the accuracy of the manufacturing equipment, and the position in the z-axis direction can be adjusted with an accuracy higher than the accuracy of the manufacturing equipment.

[0426] The above effect will be explained more specifically using FIG. 48B . FIG. 48B illustrates the change in coupling efficiency when the lens unit 100n moves in the x-axis direction along the installation plane (third upper surface 311n) under the condition No. 1 in FIG. 17 for the light source module according to this embodiment, with the angle β being 0°, 0.5°, 2°, and 5°. Regarding the angle θ and the angle φ, θ = 0° and φ = β. Assume that the first cylindrical lens 110 is displaced 1 μm in the negative z-axis direction from the optimal position before starting the movement. In this case, as shown in FIG. 16 , the coupling efficiency is significantly reduced to approximately 0.4. When β = 0°, the coupling efficiency remains low even when the lens unit 100n is moved in the x-axis direction. On the other hand, when β = 0.5°, 2°, and 5°, the coupling efficiency recovers to approximately 1 by moving the lens unit 100n in the x-axis direction along the installation plane (third upper surface 311n). In this case, the larger the angle β, the shorter the distance required to recover the coupling efficiency. On the other hand, the smaller the angle β, the wider the range of movement, allowing the coupling efficiency to be maintained at a high level. In either case, the coupling efficiency of the light source module according to this embodiment can be increased over a wider range of positional change than the range of positional change shown in the comparative example. That is, by changing the position of the lens unit 100n in the x-axis direction, the z-axis misalignment d between the generatrix 115 and the light-emitting region 201 can be precisely adjusted, thereby improving the coupling efficiency. Furthermore, in this embodiment, the generatrix 115 and the active layer are parallel, and the angle θ between the generatrix 115 and the active layer is 0°. Therefore, aberrations in the laser light L1 caused by the inclination of the generatrix 115 with respect to the active layer are unlikely to occur. Therefore, as described above, in any of the cases where β = 0.5°, 2°, or 5°, the coupling efficiency can be restored to approximately 1 by moving the lens unit 100n along the installation surface. In other words, a light source module with high coupling efficiency can be realized.

[0427] The following describes Modifications 1 and 2 of Embodiment 4. The following description focuses on the differences from Embodiment 4, and the description of commonalities will be omitted or simplified.

[0428] [First Modification of Fourth Embodiment] Hereinafter, a first modification of the fourth embodiment will be described.

[0429] FIG. 49 is a front view showing the configuration of a semiconductor laser device 1p according to the first modification of the fourth embodiment.

[0430] The semiconductor laser device 1p of this modified example has the same configuration as the semiconductor laser device 1n of embodiment 4, except that it has lens portion 100p instead of lens portion 100n and fixing member 300p instead of fixing member 300n.

[0431] The lens unit 100p is a member having a support member 120p and a first cylindrical lens 110. The support member 120p has the same configuration as the support member 120n, except for the details described below. The support member 120p has a recess into which the fourth bonding member 130 is embedded. In this modification, the recess may be a groove extending in the x-axis direction. As shown in FIG. 49 , the fourth bonding member 130, which is a solder layer for bonding the support member 120p and the first cylindrical lens 110, is embedded in the recess of the support member 120p.

[0432] The fixing member 300p includes a first fixing member 310n and a second fixing member 320p. The second fixing member 320p has the same configuration as the second fixing member 320n, except for the following details. The second fixing member 320p has a recess into which the fifth bonding member 270 is embedded. In this modification, the recess may have a groove shape extending in the x-axis direction. As shown in FIG. 49 , the fifth bonding member 270, which is a solder layer for bonding the second fixing member 320p to the fixed base 250, is embedded in the recess of the second fixing member 320p.

[0433] Furthermore, an example of a method for manufacturing the semiconductor laser device 1p of the light source module according to this modification will be described with reference to FIGS.

[0434] 50, 51, 52, and 53 are schematic diagrams showing steps in a manufacturing method for the semiconductor laser device 1p and its vicinity of the light source module according to this modification. Note that, in the drawings showing the manufacturing method below, the installation direction, etc. may be indicated by dashed arrows.

[0435] As shown in FIGS. 50 to 53, the semiconductor laser device 1p is manufactured in the following order.

[0436] First, a preparatory step is performed.

[0437] In the preparation step, first, as shown in FIG. 50 , the lens unit 100p is manufactured. The first cylindrical lens 110 is bonded to the support member 120p. More specifically, the first cylindrical lens 110 and the support member 120p are bonded together using the fourth bonding member 130. This fixes the positional relationship between the first cylindrical lens 110 and the support member 120p, and the lens unit 100p is manufactured. At this time, because the top surface 121n supports the second side surface 112, displacement of the first cylindrical lens 110 in the z-axis direction is unlikely to occur. In this way, in the preparation step, the first cylindrical lens 110 is bonded to the bonding surface (top surface 121n).

[0438] Furthermore, as shown in FIG. 51 , a first fixing member 310n is bonded to a second fixing member 320p to manufacture a fixing member 300p. The recess in the second fixing member 320p is a recess extending from the lower surface 322n toward the positive direction of the z-axis. As shown in FIG. 52 , the manufactured fixing member 300p and the laser unit 20f are bonded to the second upper surface 251 of the fixing base 250. Here, the fixing member 300p and the fixing base 250 are bonded by a fifth bonding member 270. This fixes the positional relationship between the fixing member 300p, the laser unit 20f, and the fixing member 300p. As shown in FIG. 52 , before the lens unit 100p and the fixing member 300p are bonded, the positional relationship between the first cylindrical lens 110 and the support member 120p is fixed, and the positional relationship between the fixing member 300p, the laser unit 20f, and the fixing member 300p is also fixed. At this time, since the second upper surface 251 supports the lower surface 322n, the position of the fixing member 300p is less likely to shift in the z-axis direction.

[0439] Furthermore, as shown in Fig. 52, a placement step is performed in which the lens unit 100p is placed, and as shown in Fig. 53, an alignment step is performed. Fig. 53(a) is a front view of the lens unit 100p before it has moved, and Fig. 53(b) is a front view of the lens unit 100p after it has moved in the positive direction of the x-axis along the installation plane (third upper surface 311n) and been bonded. In this modification, as in the fourth embodiment, a step of placing the lens unit 100p is performed, and an alignment step is performed.

[0440] In the semiconductor laser device 1p according to the first variant of the fourth embodiment, when the angle β between the generating line 115 and the installation plane (third upper surface 311n) satisfies 0°<|β|<45°, the same effect as that of the semiconductor laser device 1n according to the fourth embodiment can be obtained.

[0441] Furthermore, in the semiconductor laser device 1p according to the first modification of the fourth embodiment, the upper surface 121n supports the second side surface 112, so that the first cylindrical lens 110 is less likely to be displaced in the z-axis direction. Furthermore, the second upper surface 251 supports the lower surface 322n, so that the fixing member 300p is less likely to be displaced in the z-axis direction. Therefore, in such a semiconductor laser device 1p, the lens portion 100p can be easily adjusted so as to increase the coupling efficiency of the laser light L1 emitted from the semiconductor laser element 200. In other words, a semiconductor laser device 1p with high coupling efficiency is realized.

[0442] Furthermore, the first cylindrical lens 110 and the support member 120p are made of different materials. Therefore, the top surface 121n bonded to the second side surface 112 is a dissimilar material bonded surface. It is anticipated that such a dissimilar material bonded surface may be susceptible to delamination due to stress when the semiconductor laser device 1p is subjected to temperature cycles, i.e., when high and low temperatures are alternately applied. More specifically, because the first cylindrical lens 110 and the support member 120p are made of different materials, stress may be generated due to differences in thermal expansion coefficients during temperature cycles, potentially resulting in delamination. However, in the semiconductor laser device 1p, the fourth bonding member 130 is embedded in the recess, allowing the fourth bonding member 130 to be made thicker, which alleviates the stress and makes delamination less likely to occur. In other words, a highly reliable semiconductor laser device 1p is realized.

[0443] [Modification 2 of Embodiment 4] Modification 2 of Embodiment 4 will now be described.

[0444] Fig. 54 is a top view showing the configuration of a semiconductor laser device 1q according to Modification 2 of Embodiment 4. Fig. 55 is a front view showing the configuration of a semiconductor laser device 1q according to Modification 2 of Embodiment 4. Fig. 55(a) is a front view showing the configuration of a semiconductor laser device 1q according to Modification 2 of Embodiment 4 before a lens portion 100q provided in the semiconductor laser device 1q is moved, and Fig. 55(b) is a front view showing the configuration of a semiconductor laser device 1q after the lens portion 100q has been moved. The semiconductor laser device 1q shown in the top view of Fig. 54 corresponds to the semiconductor laser device 1q shown in the front view of Fig. 55(a).

[0445] The semiconductor laser device 1q according to this modification has the same configuration as the semiconductor laser device in according to the fourth embodiment, mainly in that the generatrix 115 of the first cylindrical lens 110 is parallel to the active layer and the xy plane, and that the installation plane is inclined with respect to the xy plane and the active layer. The semiconductor laser device 1q also differs from the semiconductor laser device in according to the fourth embodiment in that the semiconductor laser device 1q includes a laser unit 20 instead of the laser unit 20f, a lens unit 100q instead of the lens unit 100n, and a fixing member 300q instead of the fixing member 300n.

[0446] As explained in the first embodiment, the laser unit 20 is composed of a semiconductor laser element 200, a submount 230, a first bonding member 240, and two second bonding members 233.

[0447] The lens unit 100q is a member having a first cylindrical lens 110 and a support member 120q.

[0448] The support member 120q includes a first support member 121q and a second support member 122q. The first support member 121q and the second support member 122q are formed by processing a substrate of a semiconductor material such as glass or silicon by partial etching, polishing, cutting, or the like. They may also be formed of a metal such as Fe or an Fe alloy, or Al. ２ O ３ , ZrO ２ , Si ３ N ４ Alternatively, it may be made of ceramic such as AlN.

[0449] The first support member 121q is a member that includes an upper surface that is located closer to the positive side of the z axis and parallel to the xy plane, and a lower surface 1211q that is located closer to the negative side of the z axis and inclined with respect to the xy plane. The second support member 122q is a member that includes an upper surface that is located closer to the positive side of the z axis and inclined with respect to the xy plane, and a lower surface that is located closer to the negative side of the z axis and parallel to the xy plane. The lower surface of the second support member 122q is bonded to the first side surface 111 of the first cylindrical lens 110.

[0450] Since the lower surface of the second support member 122q is parallel to the xy plane and the first side surface 111 of the first cylindrical lens 110 is joined to this lower surface, the generatrix 115 in this modified example is parallel to the xy plane, that is, parallel to the active layer of the semiconductor laser element 200, and the angle θ between the generatrix 115 and the active layer is 0°.

[0451] A lower surface 1211q of the first support member 121q and an upper surface of the second support member 122q are parallel to each other and inclined with respect to the xy plane. The lower surface 1211q is joined to the fixing member 300q.

[0452] The fixing member 300q is a member having a first fixing member 310q and a second fixing member 320q. The first fixing member 310q and the second fixing member 320q are formed by processing a substrate of a semiconductor material such as glass or silicon by partial etching, polishing, cutting, or the like. They may also be made of metal such as Fe or an Fe alloy, or Al. ２ O ３ , ZrO ２ , Si ３ N ４ Alternatively, it may be made of ceramic such as AlN.

[0453] The first fixing member 310q and the second fixing member 320q each have a rectangular column shape extending in the y-axis direction. The first fixing member 310q has an upper surface 311q and a lower surface, and the second fixing member 320q has an upper surface 321q and a lower surface.

[0454] The lower surfaces of the first fixing member 310q and the second fixing member 320q are plane a parallel to the xy plane and are bonded to the submount 230. The upper surfaces 311q and 321q of the first fixing member 310q and the second fixing member 320q are parallel to each other, inclined with respect to the xy plane, and located on the same plane. The upper surfaces 311q and 321q are bonded to the lower surface 1211q of the first supporting member 121q.

[0455] In this manner, the fixing member 300q is placed above the first upper surface 231. In addition, as shown in FIG.

[0456] The installation plane in this modification is the upper surface 311q and the upper surface 321q, which are planes to which the lens unit 100q (more specifically, the lower surface 1211q of the first support member 121q) is fixed. Also, the installation plane, which is a plane to which the lens unit 100q is joined to the installation plane (the upper surface 311q and the upper surface 321q), is the lower surface 1211q of the first support member 121q.

[0457] Also in this modification, as in the fourth embodiment, the angle β formed between the bus 115 and the installation plane (upper surface 311q and upper surface 321q) satisfies 0°<|β|<45°.

[0458] The alignment step according to this modification is performed as follows.

[0459] The alignment step is a process of moving the lens unit 100q in two mutually perpendicular directions parallel to the installation plane (upper surface 311q and upper surface 321q). The lens unit 100q can be moved along the installation plane (upper surface 311q and upper surface 321q), and here, the installation plane (lower surface 1211q) of the lens unit 100q moves relative to the installation plane (upper surface 311q and upper surface 321q).

[0460] The second modification of the fourth embodiment also provides the same effects as those of the fourth embodiment. First, by changing the position of the lens unit 100q in the x-axis direction along the installation plane (top surfaces 311q and 321q), the z-axis offset d between the generatrix 115 and the light-emitting region 201 can be changed, thereby improving the coupling efficiency. Furthermore, when the angle β between the generatrix 115 and the installation plane (top surfaces 311q and 321q) satisfies 0°<|β|<45°, when the lens unit 100q moves along the installation plane (top surfaces 311q and 321q), Δz / Δx becomes less than 1 (see FIGS. 12 and 14 ). That is, when the position of the lens unit 100q is adjusted using manufacturing equipment, Δz is always smaller than Δx. Therefore, when the position of the lens unit 100q in the x-axis direction is adjusted using manufacturing equipment, the position in the x-axis direction can be adjusted with an accuracy equal to the accuracy of the manufacturing equipment, and the position in the z-axis direction can be adjusted with an accuracy higher than the accuracy of the manufacturing equipment.

[0461] [Effects, etc.] The semiconductor laser device 1n according to the fourth embodiment includes a semiconductor laser element 200 that emits laser light L1, and a lens unit 100n that has a first cylindrical lens 110 and an installation plane (lower surface 122n). The semiconductor laser element 200 has an active layer. The laser light L1 is incident on the first cylindrical lens 110, and the lens unit 100n reduces the divergence angle of the laser light L1 in the fast axis direction. The installation plane (lower surface 122n) is fixed to a first installation plane (third upper surface 311n). The generatrix 115 of the first cylindrical lens 110 is inclined with respect to the first installation plane (third upper surface 311n). The angle θ between the generatrix 115 and the active layer is |θ|<22.5°. In particular, in this embodiment, 0° = |θ|.

[0462] In the semiconductor laser device 1n, the generating line 115 is inclined with respect to the installation plane (third upper surface 311n), and therefore the position of the lens unit 100n in the z-axis direction can be adjusted by moving the lens unit 100n in the x-axis direction along the installation plane (third upper surface 311n).

[0463] 48B, in such a semiconductor laser device 1n, the position of the lens portion 100n (first cylindrical lens 110) can be easily adjusted to increase the coupling efficiency of the light source module according to this embodiment. In other words, when the light source module according to this embodiment is equipped with this semiconductor laser device 1n, a light source module with high coupling efficiency is realized.

[0464] In the semiconductor laser device in according to the fourth embodiment, the generatrix 115 is parallel to the active layer, that is, 0°=|θ|.

[0465] As a result, as explained above, it is possible to reduce the aberration that occurs when the active layer is tilted with respect to the generating line 115, and therefore, when the light source module according to this embodiment is equipped with this semiconductor laser device 1n, a light source module with high coupling efficiency is realized.

[0466] The semiconductor laser device 1n according to the fourth embodiment includes a fixing member 300n having a third upper surface 311n that is a first installation plane. The lens unit 100n has an installation plane (lower surface 122n) that is bonded to the first installation plane. The installation plane and the installation plane are parallel to each other and are inclined with respect to the active layer.

[0467] This makes it easier to adjust the inclination of the active layer relative to the busbar 115, that is, it makes it easier to ensure that the busbar 115 is parallel to the active layer.

[0468] The semiconductor laser device 1q according to the second modification of the fourth embodiment includes a submount 230 having a first upper surface 231. The semiconductor laser element 200 and a fixing member 300q are placed above the first upper surface 231.

[0469] This allows the upper surface 311q of the first fixing member 310q of the fixing member 300q and the upper surface 321q of the second fixing member 320q of the fixing member 300q to be the installation plane, and the installation plane and the bus bar 115 can be positioned more freely with respect to the active layer.

[0470] The semiconductor laser device 1n according to the fourth embodiment includes a submount 230 having a first upper surface 231, and a fixed base 250 having a second upper surface 251 on which the submount 230 and a fixing member 300n are mounted. The semiconductor laser element 200 is mounted above the first upper surface 231.

[0471] This allows the semiconductor laser element 200 to be placed above the second upper surface 251 of the fixed base 250. Even in such a case, the light source module according to the present embodiment includes the semiconductor laser device 1n, thereby realizing a light source module with high coupling efficiency.

[0472] In the semiconductor laser device 1n according to the fourth embodiment, the lens portion 100n further includes a support member 120n including a bonding surface to which the first cylindrical lens 110 is bonded. The support member 120n includes an installation plane.

[0473] As a result, the first cylindrical lens 110 is not directly bonded to the flat surface (third upper surface 311n) on which it is to be placed. Therefore, in the alignment step, the position of the lens unit 100n can be adjusted without the collet touching the first cylindrical lens 110, thereby preventing problems such as foreign matter, such as dirt from the collet, from adhering to the first cylindrical lens 110.

[0474] In the semiconductor laser device In according to the fourth embodiment, the first cylindrical lens 110 has a first side surface 111 parallel to the generatrix 115 and a second side surface 112 facing away from the first side surface 111 and parallel to the generatrix 115. The bonding surface is bonded to the first side surface 111 or the second side surface 112 and is parallel to the generatrix 115.

[0475] This allows the first cylindrical lens 110 and the support member 120n to be joined face to face (second side surface 112) (joint surface (upper surface 121n)), making it less likely that misalignment will occur in the z-axis direction compared to, for example, when the first cylindrical lens 110 and the support member 120n are joined point to point.

[0476] In the manufacturing method according to the fourth embodiment, the semiconductor laser device 200 has an active layer, and the bus bar 115 is parallel to the active layer.

[0477] As a result, as shown by the manufacturing method according to the fourth embodiment, a light source module is manufactured in which the generatrix 115 is parallel to the active layer of the semiconductor laser element 200. In this manufacturing method for a light source module, in the alignment step, the position of the lens unit 100n (first cylindrical lens 110) in the z-axis direction can be adjusted by moving the lens unit 100n (first cylindrical lens 110) in the x-axis direction along the first installation plane (third upper surface 311n). In other words, in a light source module manufactured by such a manufacturing method, the position of the lens unit 100n (first cylindrical lens 110) can be easily adjusted to increase the coupling efficiency of the light source module. In other words, such a manufacturing method realizes a light source module with high coupling efficiency.

[0478] (Embodiment 5) The following describes embodiment 5. The following description focuses on the differences from embodiment 1, and the description of commonalities will be omitted or simplified.

[0479] Fig. 56 is a front view showing the configuration of a semiconductor laser device 1r according to embodiment 5. Fig. 57 is a side view showing the configuration of a semiconductor laser device 1r according to embodiment 5. Fig. 58 is a top view showing the configuration of a semiconductor laser device 1r according to embodiment 5.

[0480] The semiconductor laser device 1r according to this embodiment has the same configuration as the semiconductor laser device 1 according to the first embodiment, except that it includes a lens portion 100r instead of the lens portion 100.

[0481] It is preferable that the semiconductor laser device 1r is provided with a laser unit 20 like the semiconductor laser device 1, but in Figures 56 to 58, the first electrode 210, the second electrode 220, the first bonding member 240, the two base layers 232, and the two second bonding members 233 shown in embodiment 1 are omitted from the illustration.

[0482] The lens unit 100r is a member having a first cylindrical lens 110 and a support member 120r.

[0483] The support member 120r is a member that is bonded to the first cylindrical lens 110 and supports the first cylindrical lens 110. The support member 120r has a C-shape in top view that surrounds the periphery of the semiconductor laser element 200. The support member 120r includes a first front surface 1201r and a second front surface 1202r. The first front surface 1201r and the second front surface 1202r are planes parallel to the zx plane.

[0484] The first front surface 1201r and the second front surface 1202r are surfaces that are bonded to the incident surface 117 of the first cylindrical lens 110, and are bonding surfaces according to the present embodiment. That is, in the present embodiment, unlike the first embodiment, the first cylindrical lens 110 is supported by bonding surfaces (the first front surface 1201r and the second front surface 1202r) that are parallel to the zx plane.

[0485] The support member 120r also has a lower surface 1203r shown in side view. The lower surface 1203r is a surface parallel to the xy plane. The lower surface 1203r is a surface bonded to the first upper surface 231 of the submount 230.

[0486] The flat installation surface in this embodiment is the first upper surface 231, which is a plane to which the lens unit 100r (more specifically, the lower surface 1203r of the support member 120r) is fixed. Also, the flat installation surface, which is a plane to which the lens unit 100r is joined to the flat installation surface (first upper surface 231), is the lower surface 1203r of the support member 120r.

[0487] 56 , the generatrix 115 of the first cylindrical lens 110 according to this embodiment is inclined with respect to the installation plane (first upper surface 231). Since the installation plane (first upper surface 231), the active layer, and the xy plane are parallel, the generatrix 115 is inclined with respect to the active layer of the semiconductor laser device 200 and the xy plane. The angle β between the generatrix 115 and the installation plane satisfies 0<|β|<45°. The angle θ between the generatrix 115 and the active layer satisfies |θ|<22.5°. The angle φ between the active layer and the installation plane is φ=|β-θ|, but in this embodiment, φ=0°.

[0488] The alignment step according to this embodiment is performed as follows.

[0489] The alignment step is a process of moving the lens unit 100r in two mutually perpendicular directions parallel to the installation plane (first upper surface 231). Here, since the installation plane (first upper surface 231) is parallel to the xy plane, the lens unit 100r can be moved in the x-axis direction and the y-axis direction. The lens unit 100r can be moved along the installation plane (first upper surface 231), and here, the installation plane (lower surface 1203r) of the lens unit 100r moves relative to the installation plane (first upper surface 231).

[0490] The fifth embodiment also achieves the same effects as those of the first embodiment. By changing the position of the lens unit 100r in the x-axis direction, the z-axis offset d between the generatrix 115 and the light-emitting region 201 can be changed, thereby improving the coupling efficiency. Furthermore, when the angle θ between the generatrix 115, the installation plane (first upper surface 231), and the active layer satisfies 0°<|β|<45°, when the lens unit 100r moves along the installation plane (first upper surface 231), Δz / Δx becomes less than 1 (see FIGS. 12 and 14 ). That is, when the position of the lens unit 100r is adjusted, Δz is always smaller than Δx. Therefore, when the position of the lens unit 100r in the x-axis direction is adjusted using manufacturing equipment, the position in the x-axis direction can be adjusted with an accuracy equal to the accuracy of the manufacturing equipment, and the position in the z-axis direction can be adjusted with an accuracy higher than the accuracy of the manufacturing equipment.

[0491] Sixth Embodiment Hereinafter, a sixth embodiment will be described. The following description will focus on the differences from the first embodiment, and the description of the commonalities will be omitted or simplified.

[0492] [Configuration] First, the configuration of a light source module 10s and a semiconductor laser device 1s according to the sixth embodiment will be described with reference to FIGS. 59, 60, 61, and 62. FIG.

[0493] Fig. 59 is a perspective view showing the overall configuration of a light source module 10s according to this embodiment. Fig. 60 is a perspective view of semiconductor laser devices 1s and 2s included in the light source module 10s according to this embodiment. Fig. 61 is a side view of the semiconductor laser device 1s according to this embodiment.

[0494] The light source module 10s has the same configuration as the light source module 10 according to the first embodiment, except that it includes semiconductor laser devices 1s to 6s instead of the semiconductor laser devices 1 to 6 and the step base 510.

[0495] Although the semiconductor laser devices 1s to 6s each have the same configuration, only the semiconductor laser device 1s will be described here.

[0496] The semiconductor laser device 1s includes a laser unit 20s and a lens section 100s. The laser unit 20s includes a submount 230, a first bonding member 240, a semiconductor laser element 200, a first stage 511 of a stepped base 510, and a fast-axis cylindrical lens 140s. The components of the semiconductor laser device 1s will be described below.

[0497] The semiconductor laser element 200 is fixed to the submount 230 via a first bonding member 240. The first stage 511 is a plane parallel to the xy plane and includes a first step 511a and a second step 511b that are parallel to each other. The submount 230 is fixed to the second step 511b. The first step 511a is a flat surface on which the lens unit 100s is fixed. Recesses 5101 and 5102 are formed in the first step 511a of the first stage 511. The fast-axis cylindrical lens 140s included in the laser unit 20s is disposed on the emission side of the semiconductor laser element 200 and fixed to the submount 230. The fast-axis cylindrical lens 140s is a lens that receives the laser light L10 emitted from the semiconductor laser element 200, converts the laser light L10 into laser light L10 with a reduced divergence angle in the fast-axis direction, and emits the laser light L10. The laser light L10 emitted from the fast axis cylindrical lens 140s is a quasi-collimated laser light with a divergence angle between −1° and +1°.

[0498] In this embodiment, the laser light emitted from the semiconductor laser element 200 of the semiconductor laser device 1 s and incident on the lens unit 100 s (first cylindrical lens 110 s) is referred to as laser light L10. Similarly, the laser light emitted from the fast-axis cylindrical lens 140 s of the semiconductor laser device 2 s and incident on the lens unit 100 s (first cylindrical lens 110 s) is referred to as laser light L20.

[0499] The fast-axis cylindrical lens 140s is a member made of an inorganic transparent material such as glass, and has an incident surface 147s onto which the laser light L10 is incident and an exit surface 146s from which the laser light L10 is emitted. An anti-reflection coating film matched to the wavelength of the laser light L10 is formed on the incident surface 147s and the exit surface 146s.

[0500] As shown in FIG. 61 , the fast-axis cylindrical lens 140s according to this embodiment is a plano-convex cylindrical lens having a planar incident surface 147s and an exit surface 146s that is the surface of a convex cylinder. That is, the exit surface 146s has a cylindrical surface. The incident surface 147s of the fast-axis cylindrical lens 140s is a surface parallel to the zx plane. The power axis of the cylindrical surface of the exit surface 146s is parallel to the fast axis of the laser light L10. Therefore, the generatrix 145s of the fast-axis cylindrical lens 140s is parallel to the xy plane, the active layer of the semiconductor laser device 200, and the installation plane (first stage 511a).

[0501] In the manufacturing method of the light source module 10s, before the alignment step is performed, the fast axis cylindrical lens 140s is fixed to the submount 230 via a bonding member, and the positional relationship between the fast axis cylindrical lens 140s and the semiconductor laser element 200 is fixed. That is, in the alignment step, the fast axis cylindrical lens 140s is a lens that is not moved. Therefore, the fast axis cylindrical lens 140s is not a position adjustment lens.

[0502] The optical axis of the laser beam L10 emitted from the exit surface 146s of the fast-axis cylindrical lens 140s may not be parallel to the xy plane due to the influence of an installation error in the z-axis direction of the fast-axis cylindrical lens 140s. For example, as shown in the comparative example, even a deviation of just a few μm in the z-axis direction causes the optical axis of the laser beam L10 to tilt with respect to the optical axis of the optical system directed toward the optical fiber 550, thereby reducing the coupling efficiency.

[0503] The laser light L10 is incident on the lens unit 100s. In this embodiment, the lens unit 100s is composed of a first cylindrical lens 110s having a lower surface 112s, which is an installation plane, and a first cylindrical surface, and does not have a support member. The first cylindrical lens 110s is a cylindrical lens having a power axis and a non-power axis. The power axis and the non-power axis are arranged in a perpendicular relationship. The first cylindrical lens 110s has a first cylindrical surface that is a convex or concave curved surface on the power axis.

[0504] The first cylindrical lens 110s has an incident surface 117s onto which the laser light L10 emitted from the fast axis cylindrical lens 140s is incident, and an exit surface 116s from which the laser light L1 is emitted.

[0505] The first cylindrical lens 110s is a lens made of an inorganic transparent material such as glass, and an anti-reflection coating film that matches the wavelength of the laser light L10 (laser light L1) is formed on the incident surface 117s and the exit surface 116s.

[0506] The first cylindrical lens 110s according to this embodiment is a plano-convex cylindrical lens having a first cylindrical surface in which the incident surface 117s is a flat surface and the exit surface 116s is a convex cylindrical surface. The incident surface 117 of the first cylindrical lens 110s is a surface parallel to the zx plane. The lower surface 112s is parallel to the xy plane, and the first cylindrical lens 110s has an upper surface 111s parallel to the lower surface 112s.

[0507] The generatrix 115s of the first cylindrical surface is inclined with respect to the lower surface 112s. The first cylindrical lens 110s is bonded to the first stage 511. More specifically, the lower surface 112s of the first cylindrical lens 110s is disposed on the recesses 5101 and 5102 of the first step 511a and is in partial or complete contact with the first step 511a. The first cylindrical lens 110s and the first step 511a are fixed by a second bonding member 233s, which is, for example, a solder layer. In other words, the generatrix 115s is inclined with respect to the installation plane (the first step 511a). Therefore, the generatrix 115s is inclined with respect to the active layer of the semiconductor laser device 200 and the xy plane. In this embodiment, the first step 511 a and the second step 511 b are parallel to each other, so that the active layer is parallel to the surface on which the active layer is placed (the first step 511 a).

[0508] Furthermore, in this embodiment, the angle β between the busbar 115s and the installation plane (first stage 511a) satisfies 0° < |β| < 22.5°, and the angle θ between the busbar 115s and the active layer satisfies 0° < |θ| < 22.5°.

[0509] The first cylindrical lens 110s narrows the divergence angle of the incident laser beam L10 in the fast axis and outputs it as laser beam L1 with a changed optical axis direction. More specifically, the position of the generatrix 115s is adjusted relative to the optical axis and incident position of the laser beam L10, making the optical axis of the laser beam L1 parallel to the optical axis coupled to the optical fiber 550. In FIG. 61 , the laser beam L10 output from the fast-axis cylindrical lens 140s is tilted upward, i.e., in the positive direction of the z-axis, with respect to the y-axis. In contrast, the generatrix 115s of the first cylindrical lens 110s is moved downward, i.e., in the negative direction of the z-axis, making the optical axis of the laser beam L10 parallel to the xy plane. At this time, the laser beam L10 is collimated in the fast axis direction and output as laser beam L1 traveling parallel to the xy plane.

[0510] Next, a method for manufacturing the light source module 10s according to this embodiment will be described below.

[0511] First, the preparation step will be described. In the preparation step, the lens section 100s and the laser unit 20s are prepared.

[0512] A method for manufacturing the first cylindrical lens 110s, which is a part of the lens portion 100s, will be described below. Fig. 62 is a front view showing a method for manufacturing the first cylindrical lens 110s according to this embodiment.

[0513] More specifically, (a) of Figure 62 is a front view showing a prepared cylindrical lens 900, (b) of Figure 62 is a front view showing a plurality of cut fragment lenses 901, (c) of Figure 62 is a front view for explaining the polishing of the plurality of fragment lenses 901, and (d) of Figure 62 is a front view showing a plurality of manufactured first cylindrical lenses 110s.

[0514] First, as shown in Fig. 62(a), a cylindrical lens 900 having a generatrix 915 is prepared. Furthermore, the prepared cylindrical lens 900 is cut along a plurality of cutting lines 902 indicated by dashed lines in Fig. 62(a). Here, the plurality of cutting lines 902 are parallel to one another, and the cylindrical lens 900 is cut so that the angle γ formed between the plurality of cutting lines 902 and the generatrix 915 satisfies 67.5°<γ<90°.

[0515] A plurality of lens fragments 901 were obtained by cutting the cylindrical lens 900. As shown in (b) of Fig. 62, the plurality of lens fragments 901 are arranged so that the cut surfaces are in contact with each other. For example, the plurality of lens fragments 901 may be arranged using a jig or the like.

[0516] Next, the plurality of lens fragments 901 are polished. Here, as shown in (c) of Fig. 62, the lower surface is polished up to a polishing surface 903b indicated by the dashed dotted line, and the upper surface is polished up to a polishing surface 903a, thereby polishing the plurality of lens fragments 901. Note that the polishing surface 903b and the polishing surface 903a are parallel to each other.

[0517] A plurality of first cylindrical lenses 110s are manufactured by polishing the plurality of lens fragments 901. As shown in Fig. 62(d), the generatrix 115s is inclined with respect to the upper surface 111s and the lower surface 112s. The lens portion 100s is manufactured by the above-described manufacturing method.

[0518] The second cylindrical lens 110k of the third embodiment can be manufactured by the same method as the first cylindrical lens 110s. In addition, in the manufacturing method of the first cylindrical lens 110s, the first cylindrical lens 110b of the second modification of the first embodiment can be manufactured by polishing only the polished surface 903b without polishing the polished surface 903a.

[0519] Next, the laser unit 20s is prepared. The semiconductor laser element 200 is fixed to the submount 230 via the first bonding member 240. The submount 230 is fixed to the second stage 511b. Then, the fast-axis cylindrical lens 140s is aligned and fixed to a predetermined position near the light-emitting region 201 of the semiconductor laser element 200.

[0520] Subsequently, in the disposing step, the lens unit 100s is disposed at a predetermined position on the first step 511a of the first stage 511.

[0521] Subsequently, the alignment step according to this embodiment is performed as follows.

[0522] The alignment step is a process of moving the lens unit 100s (first cylindrical lens 110s) in two mutually perpendicular directions parallel to the installation plane (first stage 511a). Here, since the installation plane (first stage 511a) is parallel to the xy plane, the lens unit 100s can be moved in the x-axis direction and the y-axis direction. The lens unit 100s can be moved along the installation plane (first stage 511a), and here, the installation plane (lower surface 112s) of the lens unit 100s moves relative to the installation plane (first stage 511a).

[0523] The sixth embodiment also achieves the same effects as those of the first embodiment. By changing the position of the lens unit 100s in the x-axis direction, the z-axis offset d between the generatrix 115 and the light-emitting region 201 can be changed, thereby improving the coupling efficiency. Furthermore, when the angle θ between the generatrix 115s, the installation surface (first stage 511a), and the active layer satisfies 0°<|θ|<22.5°, Δz / Δx becomes less than 1 when the lens unit 100s moves along the installation surface (first stage 511a) (see FIGS. 12 and 14 ). That is, when the position of the generatrix 115s of the lens unit 100s is adjusted, Δz is always smaller than Δx. Therefore, when the position of the lens unit 100s in the x-axis direction is adjusted using manufacturing equipment, the position in the x-axis direction can be adjusted with an accuracy equal to the precision of the manufacturing equipment, and the position in the z-axis direction can be adjusted with an accuracy higher than the precision of the manufacturing equipment. Therefore, the optical axis of the laser light L1 emitted from the first cylindrical lens 110s can be made precisely parallel to the xy plane.

[0524] Finally, in the fixing step, recesses 5101 and 5102 are formed in the first stage 511a on which the first cylindrical lens 110s is disposed, and the lower surface 112s and the first stage 511a are in partial contact with each other. Therefore, in the fixing step, it is possible to prevent the first cylindrical lens 110s from shifting in the z-axis direction, and it is possible to maintain high coupling efficiency in the light source module 10s.

[0525] [Effects, etc.] The semiconductor laser device 1s according to this embodiment further includes a fast-axis cylindrical lens 140s. The fast-axis cylindrical lens 140s receives the laser beam L10 emitted from the semiconductor laser element 200 and reduces the divergence angle of the laser beam L10 in the fast-axis direction. The laser beam L10 emitted from the fast-axis cylindrical lens 140s is incident on the first cylindrical lens 110s.

[0526] As described above, the fast-axis cylindrical lens 140s is provided between the semiconductor laser element 200 and the first cylindrical lens 110s. In other words, in the semiconductor laser device 1s, the semiconductor laser element 200 and the first cylindrical lens 110s are spaced apart. Here, the optical axis of light that does not pass through the focal point of the first cylindrical lens 110s changes when passing through the first cylindrical lens 110s. For laser light L10 that passes through the fast-axis cylindrical lens 140s and has an optical axis that is not parallel to the xy plane, adjusting the position of the corresponding first cylindrical lens 110s can make the laser light L1 that passes through the first cylindrical lens 110s parallel to the xy plane. In this semiconductor laser device 1s, the position of the lens unit 100s (first cylindrical lens 110s) can be easily adjusted. In other words, a light source module 10s including this semiconductor laser device 1 has high coupling efficiency.

[0527] (Other Embodiments) While the semiconductor laser device according to the present disclosure has been described above based on the embodiments and modifications thereof, the present disclosure is not limited to these embodiments and modifications thereof. As long as they do not deviate from the gist of the present disclosure, various modifications conceivable by a person skilled in the art to the embodiments and other forms constructed by combining some of the components of the embodiments and modifications thereof are also included in the scope of the present disclosure.

[0528] Although the first to third, fifth, and sixth embodiments have described the case where θ=β and 0<|β|<22.5°, and the fourth embodiment has described the case where θ=0 and 0<|β|<45°, the present invention is not limited to these. Similar effects can be obtained even when 0<|β|<45° and 0≦|θ|<22.5°. Similar effects can be obtained even when 0<|β|<45° and 0≦|θ|<22.5°, or when 0≦|θ|≦|β|. Similar effects can be obtained even when 0<|β|<45° and 0≦|θ|<22.5°, or when 0≦θ≦β or β≦θ≦0.

[0529] Furthermore, in variant example 4 of embodiment 1, we have described a case where the installation surface has recesses 2351 and 2352, but the same effect can be obtained even if the installation surface does not have recesses 2351 and 2352 and has a recess on the installation surface.

[0530] In addition, the shapes of the installation surface and the installation surface are not limited to those shown in FIG. 26 . The installation surface may be flat, and a surface made up of multiple protrusions may be used as the installation surface. In this case, the plane passing through the tips of the multiple protrusions is the installation surface. Similarly, the installation surface may be flat, and a surface made up of multiple protrusions may be used as the installation surface. In this case, the plane passing through the tips of the multiple protrusions is the installation plane.

[0531] In the above embodiment, the target object is the core 550a of the optical fiber 550, but this is not limited to this. For example, the target object may be a laser crystal, and the light source module may be a laser pumped solid state laser module.

[0532] Furthermore, the above-described embodiments can be modified, substituted, added, omitted, and the like in various ways within the scope of the claims or their equivalents.

[0533] According to the present disclosure, a light source module with high coupling efficiency can be provided.

[0534] 1, 1a, 1b, 1c, 1d, 1f, 1g, 1h, 1j, 1k, 1m, 1n, 1p, 1q, 1r, 1s, 1x, 1y, 2, 2f, 2k, 2m, 2s, 3, 4, 5, 6, 6f, 6s Semiconductor laser device 10, 10f, 10k, 10m, 10s Light source module 20, 20f, 20s Laser unit 100, 100a, 100b, 100c, 100f, 100g, 100h, 100j, 100n, 100p, 100q, 100r, 100s Lens section 110, 110b, 110s First cylindrical lens 110x FAC lens 110k Second cylindrical lens 111, 111b First side surface 111s, 121n, 311, 321, 321n, 311q, 321q, 1201h, 1211f, 1221f Top surface 112 Second side surface 112s, 122n, 312n, 322n, 1202h, 1203r, 1211, 1211b, 1211c, 1211q, 1212, 1213f, 1221, 1222f, 1231 Bottom surface 113 Third side surface 114 Fourth side surface 115, 115k, 115s, 115x, 145s, 915 Generatrix 116, 116k, 116s, 146s Output surface 117, 117k, 117s, 147s Incident surface 120, 120a, 120b, 120c, 120f, 120g, 120h, 120n, 120p, 120q, 120r Support member 120x Bonding material 121, 121b, 121f, 121q First support member 122, 122f, 122q Second support member 123 Third support member 130 Fourth bonding member 140s Fast axis cylindrical lens 200 Semiconductor laser element 201 Light emitting region 210 First electrode 220 Second electrode 230, 230d Submount 231 First upper surface 232 Underlayer 233, 233d, 233y, 233s Second bonding member 236, 236d Base material 240 First bonding member 250 Fixed base 251 Second upper surface 260 Third joining member 270 Fifth joining member 300, 300g, 300n, 300p, 300q Fixing member 301g, 311n Third upper surface 310, 310n, 310q First fixing member 320, 320n, 320p, 320q Second fixing member 501 Case 502 Base 503 Side wall 510 Staircase base 511 First stage 511a First rung 511b Second rung512 Second stage 513 Third stage 514 Fourth stage 515 Fifth stage 516 Sixth stage 550 Optical fiber 550a Core 551 Boot 552 Lead pin 600 SAC lens 700 Reflecting mirror 800 Condenser lens 900 Cylindrical lens 901 Fragment lens 903a, 903b Polished surface 1201r First front surface 1202r Second front surface 1214f Flange region 2311 Support surface 2351, 2352, 5101, 5102 Depression A1 Optical axis B1 Beam spot B2 Beam spot BFL Distance D Core diameter d Misalignment in the z-axis direction L1, L2, L3, L4, L5, L6, L10, L20 Laser light NA Numerical aperture P1 Principal point F1 Effective focal length W2 Width W3 Effective aperture width W4 Width Ws Width α Angle β Angle θ Angle

Claims

1. A semiconductor laser device, a semiconductor laser element that emits laser light; a lens unit having a first cylindrical lens and an installation plane; Equipped with the semiconductor laser element has an active layer, The first cylindrical lens is The laser light is incident, The divergence angle of the laser beam is reduced in the fast axis direction; The installation plane is fixed to a first installation plane, a generatrix of the first cylindrical lens is inclined at least at an angle β1 with respect to the first installation plane or at an angle β2 with respect to the installation plane, The angle θ between the busbar and the active layer is |θ| < 22.5° and The semiconductor laser device includes a submount having a first top surface; the first flat surface is disposed below the first upper surface, The semiconductor laser device includes a fixed base having a second upper surface; the submount is disposed above the second top surface; The semiconductor laser element is disposed above the first upper surface. Semiconductor laser device.

2. At least, the angle β1 is 0°<|β1|<45°, or the angle β2 is 0°<|β2|<45°.

2. The semiconductor laser device according to claim 1.

3. At least, the angle β1 is 0.5°≦|β1|≦2°, or the angle β2 is 0.5°≦|β2|≦2.

2. The semiconductor laser device according to claim 1.

4. The installation plane and the first installation plane are in contact with each other in part or in whole.

4. The semiconductor laser device according to claim 1.

5. The first flat surface has one or more recesses.

5. The semiconductor laser device according to claim 4.

6. the lens portion has an inclined side surface inclined with respect to the generatrix on a side facing the first installation plane, and an opposite side surface facing away from the inclined side surface, The inclined side surface is placed on the first flat surface.

4. The semiconductor laser device according to claim 1.

7. The active layer is parallel to the first flat surface.

4. The semiconductor laser device according to claim 1.

8. The active layer is parallel to the installation plane.

4. The semiconductor laser device according to claim 1.

9. The semiconductor laser element is installed above the first upper surface.

4. The semiconductor laser device according to claim 1.

10. The first installation plane is the first upper surface.

10. The semiconductor laser device according to claim 9.

11. The first mounting plane is disposed above the active layer.

4. The semiconductor laser device according to claim 1.

12. The installation plane is installed above the active layer.

4. The semiconductor laser device according to claim 1.

13. A semiconductor laser device, comprising: a semiconductor laser element that emits laser light; a lens unit having a first cylindrical lens and an installation plane; Equipped with the semiconductor laser element has an active layer, The first cylindrical lens is The laser light is incident, The divergence angle of the laser beam is reduced in the fast axis direction; The installation plane is fixed to a first installation plane, a generatrix of the first cylindrical lens is inclined at least at an angle β1 with respect to the first installation plane or at an angle β2 with respect to the installation plane, The angle θ between the busbar and the active layer is |θ| < 22.5° and The semiconductor laser device includes a submount having a first top surface; the semiconductor laser element is disposed above the first upper surface, the semiconductor laser device includes a fixing member having the first flat installation surface; The fixing member is fixed to the submount. Semiconductor laser device.

14. A semiconductor laser device, comprising: a semiconductor laser element that emits laser light; a lens unit having a first cylindrical lens and an installation plane; Equipped with the semiconductor laser element has an active layer, The first cylindrical lens is The laser light is incident, The divergence angle of the laser beam is reduced in the fast axis direction; The installation plane is fixed to a first installation plane, a generatrix of the first cylindrical lens is inclined at least at an angle β1 with respect to the first installation plane or at an angle β2 with respect to the installation plane, The angle θ between the busbar and the active layer is |θ| < 22.5° and The semiconductor laser device a submount having a first top surface; a fixing member having a third upper surface; a fixed base having a second upper surface; Equipped with the submount and the fixing member are disposed above the second upper surface; The semiconductor laser element is disposed above the first upper surface. Semiconductor laser device.

15. A semiconductor laser element that emits laser light; a lens unit having a first cylindrical lens and an installation plane; Equipped with the semiconductor laser element has an active layer, The first cylindrical lens is The laser light is incident, The divergence angle of the laser beam is reduced in the fast axis direction; The installation plane is fixed to a first installation plane, a generatrix of the first cylindrical lens is inclined at least at an angle β1 with respect to the first installation plane or at an angle β2 with respect to the installation plane, The angle θ between the busbar and the active layer is |θ| < 22.5° and The installation plane is provided on the first cylindrical lens. Semiconductor laser device.

16. A semiconductor laser element that emits laser light; a lens unit having a first cylindrical lens and an installation plane; Equipped with the semiconductor laser element has an active layer, The first cylindrical lens is The laser light is incident, The divergence angle of the laser beam is reduced in the fast axis direction; The installation plane is fixed to a first installation plane, a generatrix of the first cylindrical lens is inclined at least at an angle β1 with respect to the first installation plane or at an angle β2 with respect to the installation plane, The angle θ between the busbar and the active layer is |θ| < 22.5° and the lens unit includes a support member having the installation plane, the support member has a bonding surface to which the first cylindrical lens is bonded, the support member is fixed to the first flat installation surface, the first cylindrical lens has a first side surface parallel to the generatrix and a second side surface facing away from the first side surface and parallel to the generatrix; The joining surface is parallel to the generatrix and is joined to the first side surface or the second side surface. Semiconductor laser device.

17. A semiconductor laser element that emits laser light; a lens unit having a first cylindrical lens and an installation plane; Equipped with the semiconductor laser element has an active layer, The first cylindrical lens is The laser light is incident, The divergence angle of the laser beam is reduced in the fast axis direction; The installation plane is fixed to a first installation plane, a generatrix of the first cylindrical lens is inclined at least at an angle β1 with respect to the first installation plane or at an angle β2 with respect to the installation plane, The angle θ between the busbar and the active layer is |θ| < 22.5° and the lens unit includes a support member having the installation plane, the support member has a bonding surface to which the first cylindrical lens is bonded, the support member is fixed to the first flat installation surface, the first cylindrical lens has an inclined side surface inclined with respect to the generatrix on a side facing the first installation plane, and an opposite side surface facing away from the inclined side surface, The inclined side surface is disposed on the joining surface. Semiconductor laser device.

18. A semiconductor laser device, comprising: a semiconductor laser element that emits laser light; a lens unit having a first cylindrical lens and an installation plane; Equipped with the semiconductor laser element has an active layer, The first cylindrical lens is The laser light is incident, The divergence angle of the laser beam is reduced in the fast axis direction; The installation plane is fixed to a first installation plane, a generatrix of the first cylindrical lens is inclined at least at an angle β1 with respect to the first installation plane or at an angle β2 with respect to the installation plane, The angle θ between the busbar and the active layer is |θ| < 22.5° and the busbars are parallel to the active layer; the semiconductor laser device includes a fixing member having a third upper surface that is the first installation plane; the lens unit has an installation plane bonded to the first installation plane, the first installation plane and the installation plane are parallel to each other, the first mounting plane and the mounting plane are inclined with respect to the active layer; The semiconductor laser device includes a submount having a first top surface; The semiconductor laser element and the fixing member are disposed above the first upper surface. Semiconductor laser device.

19. A semiconductor laser device, comprising: a semiconductor laser element that emits laser light; a lens unit having a first cylindrical lens and an installation plane; Equipped with the semiconductor laser element has an active layer, The first cylindrical lens is The laser light is incident, The divergence angle of the laser beam is reduced in the fast axis direction; The installation plane is fixed to a first installation plane, a generatrix of the first cylindrical lens is inclined at least at an angle β1 with respect to the first installation plane or at an angle β2 with respect to the installation plane, The angle θ between the busbar and the active layer is |θ| < 22.5° and the busbars are parallel to the active layer; the semiconductor laser device includes a fixing member having a third upper surface that is the first installation plane; the lens unit has an installation plane bonded to the first installation plane, the first installation plane and the installation plane are parallel to each other, the first mounting plane and the mounting plane are inclined with respect to the active layer; The semiconductor laser device a submount having a first top surface; a fixed base having a second upper surface on which the submount and the fixing member are mounted; Equipped with The semiconductor laser element is disposed above the first upper surface. Semiconductor laser device.

20. A semiconductor laser device, comprising: a semiconductor laser element that emits laser light; a lens unit having a first cylindrical lens and an installation plane; Equipped with the semiconductor laser element has an active layer, The first cylindrical lens is The laser light is incident, The divergence angle of the laser beam is reduced in the fast axis direction; The installation plane is fixed to a first installation plane, a generatrix of the first cylindrical lens is inclined at least at an angle β1 with respect to the first installation plane or at an angle β2 with respect to the installation plane, The angle θ between the busbar and the active layer is |θ| < 22.5° and the busbars are parallel to the active layer; the semiconductor laser device includes a fixing member having a third upper surface that is the first installation plane; the lens unit has an installation plane bonded to the first installation plane, the first installation plane and the installation plane are parallel to each other, the first mounting plane and the mounting plane are inclined with respect to the active layer; the lens unit further includes a support member including a bonding surface to which the first cylindrical lens is bonded, the support member includes the installation plane, the first cylindrical lens has a first side surface parallel to the generatrix and a second side surface facing away from the first side surface and parallel to the generatrix; The joining surface is joined to the first side surface or the second side surface and is parallel to the generatrix. Semiconductor laser device.

21. A semiconductor laser device, comprising: a semiconductor laser element that emits laser light; a lens unit having a first cylindrical lens and an installation plane; Equipped with the semiconductor laser element has an active layer, The first cylindrical lens is The laser light is incident, The divergence angle of the laser beam is reduced in the fast axis direction; The installation plane is fixed to a first installation plane, a generatrix of the first cylindrical lens is inclined at least at an angle β1 with respect to the first installation plane or at an angle β2 with respect to the installation plane, The angle θ between the busbar and the active layer is |θ| < 22.5° and The semiconductor laser device includes: Further provided with a second cylindrical lens and a second installation plane, The second cylindrical lens is the laser light emitted from the first cylindrical lens is incident on the reducing the divergence angle of the laser beam in the fast axis direction; the second cylindrical lens is fixed to the second installation plane, a generatrix of the second cylindrical lens is inclined with respect to the second installation plane; The direction in which the generatrix of the first cylindrical lens is inclined with respect to the first installation plane is opposite to the direction in which the generatrix of the second cylindrical lens is inclined with respect to the second installation plane. Semiconductor laser device.

22. A semiconductor laser device, comprising: a semiconductor laser element that emits laser light; a lens unit having a first cylindrical lens and an installation plane; Equipped with the semiconductor laser element has an active layer, The first cylindrical lens is The laser light is incident, The divergence angle of the laser beam is reduced in the fast axis direction; The installation plane is fixed to a first installation plane, a generatrix of the first cylindrical lens is inclined at least at an angle β1 with respect to the first installation plane or at an angle β2 with respect to the installation plane, The angle θ between the busbar and the active layer is |θ| < 22.5° and The semiconductor laser device further includes a fast-axis cylindrical lens; The fast axis cylindrical lens is the laser light emitted from the semiconductor laser element is incident thereon, reducing the divergence angle of the laser beam in the fast axis direction; The laser light emitted from the fast axis cylindrical lens is incident on the first cylindrical lens. Semiconductor laser device.

23. a plurality of semiconductor laser devices according to any one of claims 1 to 3; The laser beams emitted from the semiconductor laser elements included in each of the plurality of semiconductor laser devices are multiplexed. Light source module.

24. a hermetic package for hermetically sealing a plurality of the semiconductor laser devices; 24. The light source module of claim 23.

25. A method for manufacturing a light source module, comprising: The light source module includes: a semiconductor laser element that emits laser light; A first installation plane; a lens unit having a first cylindrical lens and an installation plane; Equipped with the semiconductor laser element has an active layer, the first cylindrical lens reduces the divergence angle of the laser light in the fast axis direction; the installation plane is fixed to the first installation plane, The manufacturing method includes: an arrangement step of arranging the lens unit on the first installation plane so that at least a generatrix of the first cylindrical lens is inclined with respect to the first installation plane, or an arrangement step of arranging the lens unit on the first installation plane so that a generatrix of the first cylindrical lens is inclined with respect to the installation plane; an alignment step of causing the laser light emitted from the semiconductor laser element to be incident on the first cylindrical lens and moving the arranged lens unit in two directions parallel to the first installation plane and perpendicular to each other; a fixing step of fixing the moved lens unit to the first installation plane; Including, In the arranging step, the angle θ between the busbar and the active layer is |θ| < 22.5° and The active layer is parallel to at least the first installation plane or parallel to the installation plane. Manufacturing method.

26. In the alignment step, the lens portion is moved while the semiconductor laser element emits the laser light. The method of claim 25.

27. The lens portion has a support member, the support member has a bonding surface to which the first cylindrical lens is bonded, The manufacturing method further includes a preparation step in which the first cylindrical lens is bonded to the bonding surface; The preparing step is performed before the placing step. The method of claim 25 or 26.

28. The busbars are parallel to the active layer. The method of claim 25 or 26.