Multiband laser chip integrated laser

Abstract

The utility model provides a multiband laser chip integrated laser, which comprises a packaging shell, the packaging shell comprises a packaging base and a packaging cap, the packaging base is provided with a plurality of laser chips, the packaging shell is provided with a laser beam processing assembly, and the packaging cap is provided with a plurality of laser chips. Output light beams with different wavelengths emitted by the plurality of laser chips are output outwards after passing through the laser beam processing assembly; the packaging base is further provided with a temperature sensor, a heat sink and a temperature control module, the heat sink is arranged between the temperature control module and the laser chip, and one laser chip correspondingly adopts one temperature sensor, one heat sink and one temperature control module. In the packaging shell of the utility model, each laser chip is correspondingly provided with one temperature sensor, one heat sink and one temperature control module, thereby preventing mutual influence when the temperature control modules carry out temperature regulation and control on the laser chips.

Description

Technical Field

[0001] This utility model relates to a multi-band laser device structure, specifically, to a multi-band laser chip integrated laser. Background Technology

[0002] Tunable laser absorption spectroscopy (TDLAS) is a highly sensitive trace gas detection technology. By using a single-frequency tunable laser, it can identify different characteristic absorptions from the components of a gas mixture, avoiding spectral interference. It has high sensitivity and resolution. By combining it with modulation techniques and long optical path lengths, the detection sensitivity can reach the ppt level. It is widely used in molecular spectroscopy research, industrial process monitoring and control, combustion process diagnostics and analysis, engine efficiency and vehicle exhaust detection, explosion detection, and atmospheric trace pollutant gas monitoring.

[0003] Due to the high selectivity of TDLAS technology, a single laser source can only measure a single gas. Even with a wide tuning range, it can only measure a maximum of two or three gas components. Therefore, when detecting the concentration of multi-component gases, it is usually necessary to consider using multiple laser sources with different wavelengths. In contrast to multiple separate laser sources, designing and developing a standardized universal packaging structure (such as TO packaging or dish packaging) is beneficial for miniaturizing and reducing the cost of TDLAS-based laser detection systems. In this packaging structure, a beam combining component is used to combine multiple multi-wavelength laser beams. Such a highly integrated monolithic multi-band laser chip laser is conducive to miniaturization and cost reduction of TDLAS-based laser detection systems.

[0004] In TDLAS technology, temperature has a significant impact on the performance of the laser chip. Temperature changes will cause the emission wavelength of the laser chip to drift, thereby reducing the detection sensitivity and even causing false alarms. Therefore, TDLAS technology requires the use of a high-precision temperature control module (such as a TEC thermoelectric cooler) to maintain the constant temperature of the laser chip and ensure the accuracy of the TDLAS laser detection system for gas concentration detection.

[0005] For example, Chinese invention patent CN202310198025.6 discloses a dual-channel laser, a dual-channel detector, a dual-channel laser packaging method, and a gas chamber. In this disclosure, the dual-channel laser uses TO packaging. TO packaging, as a standardized and universal packaging, achieves miniaturization and universality of the laser from the device end. However, limited by the TO packaging structure, this disclosed solution only uses a reflecting prism to reflect the beams of the two lasers into two parallel laser beams for outward output, which is still equivalent to using two separate laser sources. This results in a low degree of integration for multi-band laser chips and is not conducive to the miniaturization and cost reduction of TDLAS laser detection systems. Moreover, the two lasers (laser chips) in the above-mentioned disclosure share a ceramic substrate and a temperature controller (TEC). The temperature controller controls the laser temperature through the ceramic substrate. The temperature adjustments of the two lasers will affect each other, which is not conducive to the stability of the laser chip's emission wavelength. Limited by the temperature control structure (only one ceramic substrate), even if a high-performance digital TEC that can measure temperature at multiple points and control the temperature of a single point (which can be switched) is used, it will still affect the adjacent laser chips and thus affect the emission wavelength.

[0006] In order to solve the above problems, people have been seeking an ideal technological solution. Utility Model Content

[0007] The purpose of this invention is to address the shortcomings of existing technologies and improve the problem of mutual interference between temperature control modules in existing multi-band lasers. This invention provides a multi-band laser chip integrated laser in which each laser chip is equipped with a temperature sensor, heat sink, and temperature control module, preventing mutual interference between the temperature control modules when regulating the temperature of the laser chips.

[0008] To achieve the above objectives, the technical solution adopted by this utility model is as follows: It includes a packaging shell, which comprises a packaging base and a packaging cap. The packaging base is equipped with multiple laser chips, and the packaging shell is equipped with a laser beam processing component. Output beams of different wavelengths emitted by the multiple laser chips are all output outwards after passing through the laser beam processing component. The packaging base is also equipped with a temperature sensor, a heat sink, and a temperature control module. The heat sink is disposed between the temperature control module and the laser chips. Each laser chip corresponds to one temperature sensor, one heat sink, and one temperature control module.

[0009] Based on the above, a heat insulation block is provided between the adjacent heat sink and the temperature control module.

[0010] Based on the above, the packaging shell adopts a butterfly-shaped package, and the laser chip adopts an edge-emitting laser chip.

[0011] Based on the above, the laser beam processing component includes a beam combining unit, which employs a beam combining lens and a reflector, wherein the beam combining lens employs a wavelength beam combining lens and / or a polarization beam combining lens.

[0012] Based on the above, the laser beam processing component includes a first lens, and the output beam is combined and shaped after passing through the first lens.

[0013] Based on the above, the packaging shell adopts a T0 package, the laser chip adopts a surface-emitting laser chip or an edge-emitting laser chip, and the packaging shell is provided with an optical path deflection structure for changing the direction of the output beam of the edge-emitting laser chip.

[0014] Based on the above, the laser beam processing component includes a beam combining unit, which employs a third lens and a spatial beam combining element. The third lens converges the output beam, and the spatial beam combining element is located at the focal point where the output beam converges.

[0015] Based on the above, the laser beam processing component includes a fourth lens, and the fourth lens and the third lens form a focusing lens group. The fourth lens initially converges the output beam, and the third lens converges the output beam to a focal point.

[0016] Based on the above, the output beams emitted between the plurality of laser chips are configured to have a tilt angle that brings them closer to each other before passing through the third lens.

[0017] Based on the above, the laser beam processing component includes a sixth lens, and the output beam is collimated by the sixth lens. The sixth lens is a spherical lens or a cylindrical lens group.

[0018] Based on the above, the laser beam processing component includes an optical isolator, through which the output beam passes to prevent stray light from being transmitted to the laser chip.

[0019] Based on the above, the temperature control module uses a TEC cooler or heater.

[0020] Based on the above, the encapsulation housing is filled with a mixed target gas of a fixed concentration to enable the tracking of the center wavelength of the output of multiple laser chips.

[0021] This utility model has substantial features and progress compared to the prior art. Specifically, in the packaging shell of this utility model, each laser chip is provided with a temperature sensor, heat sink and temperature control module to prevent the temperature control modules from affecting each other when regulating the temperature of the laser chips.

[0022] Meanwhile, by combining the multi-band output beams of multiple laser chips through a laser beam processing component before outputting them outward, the overall laser optical path achieves high integration and occupies less space. Based on the compact optical path structure, the packaging shell can adopt a standardized and universal packaging structure, which is beneficial for the miniaturization and cost reduction of the TDLAS-based laser detection system. The heat insulation block further prevents temperature adjustments between adjacent laser chips from affecting each other, ensuring accuracy when detecting the concentration of multiple or multi-component target gases. Furthermore, a beam combining scheme based on a focusing lens and a beam combining lens are proposed in the laser, further improving the integration and compactness of the overall laser optical path structure. Moreover, the proposed butterfly-shaped packaged laser and TO-packaged laser suitable for TDLAS laser detection systems further expand the laser's applicability. Attached Figure Description

[0023] Figure 1 This is a schematic diagram of the overall structure of the first embodiment of the present invention based on butterfly packaging;

[0024] Figure 2 This is a schematic diagram of the overall structure of the second embodiment of the present invention based on butterfly packaging;

[0025] Figure 3 This is a schematic diagram of the overall structure of the first embodiment of the present invention based on TO packaging;

[0026] Figure 4 This is a schematic diagram of the overall structure of the second embodiment of the present invention based on TO packaging;

[0027] In the figure, the attached figures are labeled as follows:

[0028] Package housing 1, package base 11, package cap 12, pins 13;

[0029] 2. Laser chip, 21. Optical path turning structure, 22. Temperature sensor, 23. Heat sink, 24. Temperature control module, 25. Heat insulation block;

[0030] First lens 31, spatial beam combiner 32, third lens 33, fourth lens 34, optical path isolator 35, sixth lens 36; beam combiner lens 311, reflector 312;

[0031] Output beam 201. Detailed Implementation

[0032] The technical solution of this utility model will be further described in detail below through specific embodiments.

[0033] Example 1

[0034] like Figure 1As shown, the multi-band laser chip integrated laser of this embodiment includes a package housing 1, a laser chip 2, a laser beam processing component, and a temperature control module 24. The laser chip 2, the laser beam processing component, and the temperature control module 24 are all mounted on a single package housing 1.

[0035] The packaging housing 1 includes a single packaging base 11 and a packaging cap 12 that matches the packaging base 11. The packaging base 11 is also provided with pins 13. The single packaging base 11 is provided with a single packaging cap 12. The packaging base 11 and packaging cap 12, which have simple structure and shape, can be used as a standardized universal package, giving the packaging housing 1 the advantages of miniaturization, universality and low cost.

[0036] In this embodiment, the encapsulation housing 1 adopts a TO encapsulation structure.

[0037] Laser chip 2 is mounted on the packaging base 11 and connected to pin 13. Multiple laser chips 2 emit output beams 201 of different wavelengths. Each output beam 201 of a specific wavelength corresponds to the detection of a single target gas, which can be used to detect the concentration of multiple or multi-component gases. For example, for common gases that need to be detected, the laser absorption peak wavelength for methane is 1653.7 nm, for carbon monoxide it is 1567 nm, for hydrogen sulfide it is 1578 nm, and for oxygen it is 760 nm. In practical applications, after lasers of different wavelengths pass through their corresponding target gases, the absorption peaks change. The TDLAS-based laser detection system detects the changes in the absorption peaks, thus detecting the corresponding target gas and issuing an alarm.

[0038] Encapsulating multiple laser chips 2 that emit light of different wavelengths simultaneously within a single standardized universal package facilitates the miniaturization and universalization of the packaging structure for multi-gas detection laser sources from the device end. Of course, a single laser chip 2 can be used to detect not only one target gas component, but also to measure two or three target gas components under a wide tuning range.

[0039] In this embodiment, the packaging structure adopts TO packaging, and the laser chip 2 adopts an edge-emitting laser chip (EEL). Multiple laser chips 2 are mounted on the packaging base 11, and the output beam 201 emitted by the laser chip 2 is directed toward the top end face of the packaging cap 12. In order to make the output beam 201 emitted by the edge-emitting laser chip face away from the packaging base 11 and toward the packaging cap 12, an optical path deflection structure 21 for reflecting the output beam 201 of the laser chip 2 also needs to be installed.

[0040] The laser beam processing component is used to process the output beams 201 of different wavelengths emitted by multiple laser chips 2 and output them outward, such as by focusing, collimating, isolating the optical path, and combining the beams.

[0041] In this embodiment, the laser beam processing component includes a beam combining unit to combine the output beam 201.

[0042] The beam combining unit is installed in the package housing 1, and the output beams 201 of different wavelengths emitted by multiple laser chips 2 all pass through the beam combining unit and are combined.

[0043] In this embodiment, the beam combining unit employs a third lens 33 and a spatial beam combining element 32. The third lens 33 is disposed inside the encapsulation housing 1, and the spatial beam combining element 32 is mounted on the outer wall or inner wall of the encapsulation housing 1 (e.g., Figure 1 Installed on the outer wall, Figure 2 (Installed on the inner wall); the third lens 33 converges the output beams 201 of multiple laser chips 2 into a focal spot. The spatial beam combiner 32 is located at the focal point where the output beams 201 converge. The spatial beam combiner 32 can be made of optical fiber, grating, or other components. It works with the third lens 33 to combine the multi-band output beams 201 at the focal spot and output them outside the packaging housing 1. For example, the focal spot enters the end of an optical fiber to be output outward through the optical fiber.

[0044] The laser chip temperature control component is also installed inside the encapsulation housing 1.

[0045] The laser chip temperature control component includes a temperature sensor 22, a heat sink 23, and a temperature control module 24. The temperature sensor 22 is used to detect the temperature of the laser chip 2. The temperature sensor 22 can be a thermistor, thermistor diode, thermocouple, etc. Based on factors such as the working environment of the laser source, the temperature control module 24 uses a TEC cooler or heater (such as a resistance wire, ceramic heater, etc.). The heat sink 23 is located between the temperature control module 24 and the laser chip 2. The temperature sensor 22 and the laser chip 2 are mounted on the heat sink 23, which enables the transmission of thermal response between the laser chip and the temperature control module. Temperature is one of the main factors affecting the center wavelength of the laser chip 2. In the TDLAS-based laser detection system, the laser chip temperature control component provides real-time temperature control of the laser chip 2, ensuring the stability of the laser beam's center wavelength.

[0046] Preferably, each laser chip 2 is equipped with a temperature sensor 22, a heat sink 23, and a temperature control module 24 to adjust the center wavelength of multiple laser chips 2 in real time. The temperature requirements for the stable center wavelength of multi-band laser chips 2 may be different. By setting a set of laser chip temperature control components for each laser chip 2, the accuracy of detecting the concentration of multiple or multi-component target gases is ensured, and the temperature adjustment between adjacent laser chips 2 is prevented from affecting each other.

[0047] Preferably, a heat insulation block 25 is provided between the heat sink 23 and the temperature control module 24 of the adjacent laser chips 2 to further prevent the temperature adjustment between adjacent laser chips 2 from affecting each other and to ensure the accuracy of detecting the concentration of multiple or multi-component target gases. The heat insulation block 25 is made of a material with low thermal conductivity. Of course, "heat insulation block" is not a limitation on the use of heat insulation materials. For example, heat insulation adhesive can also be used for heat insulation block 25.

[0048] In this embodiment, each laser chip 2 in the encapsulation housing 1 is provided with a temperature sensor 22, a heat sink 23, and a temperature control module 24 to prevent the temperature control modules 24 from affecting each other when regulating the temperature of the laser chip 2. Furthermore, the heat insulation block 25 further prevents the temperature adjustments of adjacent laser chips 2 from affecting each other, ensuring the accuracy of detecting the concentration of multiple or multi-component target gases. Moreover, the multi-band output beams 201 of multiple laser chips 2 are combined by the beam combining unit, resulting in a high degree of integration and a small footprint of the overall laser optical path. Based on the compact optical path structure, the encapsulation housing 1 can adopt a standardized and universal encapsulation structure, which is beneficial for the miniaturization and cost reduction of the TDLAS-based laser detection system.

[0049] Example 2

[0050] like Figure 2 As shown, the difference between this embodiment and embodiment 1 is that the laser chip 2 is a surface-emitting laser chip and no longer has an optical path turning structure 21.

[0051] In this embodiment, the laser chip 2 is a surface-emitting laser chip (VCSEL). The laser chip 2 is mounted on the packaging base 11, and the output beam 201 emitted by the laser chip 2 is directed away from the packaging base 11 and toward the packaging cap 12.

[0052] Example 3

[0053] like Figure 3 As shown, the difference between this embodiment and embodiment 1 is that the packaging shell 1 is a butterfly-shaped package and no longer has an optical path turning structure 21.

[0054] In this embodiment, the packaging housing 1 adopts a butterfly-shaped package, and the laser chip, laser beam processing components, etc. are all mounted on the packaging base 11. The laser chip 2 adopts an edge-emitting laser chip (EEL). Preferably, the output beam 201 emitted by the laser chip 2 is directed toward the packaging side of the packaging housing 1 that does not have pins 13.

[0055] Example 4

[0056] like Figure 4 As shown, the difference between this embodiment and embodiment 3 is that the beam combining unit uses a beam combining lens 311 and a reflector 312, and a first lens 31 is used to shape the output beam.

[0057] In this embodiment, the beam combining unit of the laser beam processing component adopts a beam combining lens 311 and a reflector 312. The beam combining lens 311 adopts a wavelength beam combining lens and / or a polarization beam combining lens. The output beams 201 emitted by multiple laser chips 2 are at an incident angle of 45 degrees with both the beam combining lens 311 and the reflector 312. Therefore, the beam combining lens 311 and the reflector 312 combine the output beams 201 of different wavelengths emitted by multiple laser chips 2 into one beam.

[0058] In this embodiment, the laser beam processing component also includes a first lens 31. The first lens 31 serves as a shaping lens. After the beam combining unit combines the output beams 201 of different wavelengths emitted by multiple laser chips 2 into one beam, this output beam 201 is shaped by the first lens 31 and then directly output to the outside of the packaging shell 1 or is focused into the end of the optical fiber to be output to the outside through the optical fiber.

[0059] Example 5

[0060] Based on Embodiments 1, 2, and 3, this embodiment can be used in combination with Embodiment 6. In this embodiment, as a difference from Embodiment 4, such as… Figure 3 As shown, the output beams 201 emitted between multiple laser chips 2 are configured to have a tilt angle that approaches each other before passing through the third lens 33 of the beam combining unit. This helps to reduce the focusing distance of the third lens 33 of the beam combining unit on the output beams 201, ensuring the compactness and efficiency of the optical path structure. To achieve the tilt, in the TO package, the upper surface of the heat sink 23 can be tilted so that the angle of the surface-emitting laser chip or the edge-emitting laser chip is tilted. The edge-emitting laser chip can also achieve this by adjusting the turning angle of the optical path turning structure 21.

[0061] Example 6

[0062] Based on Embodiments 1, 2, and 3, this embodiment can be used in combination with Embodiment 5. In this embodiment, as a difference from Embodiment 4, such as… Figure 1As shown, the laser beam processing assembly also includes a fourth lens 34. The output beam 201 emitted from multiple laser chips 2 can pass through the fourth lens 34 before passing through the third lens 33 of the beam combining unit. The fourth lens 34 and the third lens 33 form a focusing lens group. The fourth lens 34 initially converges the output beam 201, and the third lens 33 converges the output beam 201 to a focal point. The fourth lens 34 helps to reduce the focusing distance of the third lens 33 of the beam combining unit for the output beam 201, ensuring a compact and efficient optical path structure.

[0063] Example 7

[0064] Based on Embodiments 1, 2, 3, and 4, to cooperate with the beam combining unit in combining the output beam 201, the laser beam processing assembly further includes a sixth lens 36. The sixth lens 36 is disposed within the encapsulation housing 1, and the output beam 201 is collimated by the sixth lens 36 before passing through the beam combining unit. The sixth lens 36 is a spherical lens to complete the collimation of the laser beam, or the sixth lens 36 is a cylindrical lens group to complete the collimation of the fast and slow axes of the laser beam. The use of the sixth lens 36 can ensure the beam combining effect.

[0065] Example 8

[0066] Based on Embodiments 1, 2, 3, and 4, the laser beam processing assembly further includes an optical path isolator 35. The output beam 201 passes through the optical path isolator 35 before passing through the beam combining unit to prevent stray light from being transmitted to the laser chip end and causing damage to the laser chip 2.

[0067] Example 9

[0068] Based on Embodiments 1, 2, 3, and 4, in this embodiment, the encapsulation housing 1 is filled with a mixed target gas of a fixed concentration. The mixed gas includes multiple specific target gases, each of which corresponds to a specific wavelength of light emitted by a single laser chip 2. After the output beam 201 passes through the specific target gas, it can be used in conjunction with the photodetector in the TDLAS-based laser detection system to achieve real-time tracking of the output center wavelength of multiple laser chips 2. At this time, the encapsulation housing 1 functions similarly to a reference gas chamber, and the output beam 201 is transmitted inside the encapsulation housing 1 before being output outward.

[0069] The output beam 201 passes through a target gas of a fixed concentration inside the encapsulation housing 1, which does not affect the accuracy of the alarm information when it comes into contact with the target gas again (i.e., the target gas concentration changes), and can also track the emission wavelength of the laser chip 2 in real time.

[0070] The principle is as follows: In Tunable Semiconductor Laser Absorption Spectroscopy (TDLAS) technology, when the concentration of the target gas changes or the emission wavelength of the laser changes, the detection signal of the photodetector (PD signal) will change accordingly. The change occurs in the depth and position of the dip in the PD signal (hereinafter referred to as dip depth and dip position). Specifically, when the concentration of the target gas increases, the absorption intensity of the gas on the laser will increase. In TDLAS technology, this is usually manifested as an increase in the depth of the dip corresponding to the gas absorption line in the PD signal. The increase in the dip depth directly reflects the increase in gas concentration, and vice versa. Therefore, by measuring the change in dip depth, the concentration of the target gas can be accurately measured.

[0071] Furthermore, in TDLAS technology, the position of the dip in the PD signal is typically related to the laser's emission wavelength. While the dip depth changes when the target gas concentration changes, the dip position usually remains relatively stable. This is because both the laser's emission wavelength and the absorption line position of the gas being measured are determined by physical laws and are independent of gas concentration. Therefore, during measurement, maintaining the stability of the laser's emission wavelength ensures the stability of the dip position. Conversely, when the laser's emission wavelength drifts, the dip position of the PD signal will usually change.

[0072] In summary, when the depth of the depression changes, the target gas is detected, and an alarm signal needs to be issued; when the position of the depression changes, the wavelength of the laser has drifted, and measures such as adjusting the operating temperature of the laser are needed to correct the wavelength drift.

[0073] Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of this utility model and not to limit it; although the utility model has been described in detail with reference to preferred embodiments, those skilled in the art should understand that modifications can still be made to the specific implementation of this utility model or equivalent substitutions can be made to some technical features without departing from the spirit of the technical solution of this utility model, and all such modifications and substitutions should be covered within the scope of the technical solution claimed by this utility model.

Claims

1. A multi-band laser chip integrated laser, characterized in that, The package shell (1) comprises a package base (11) and a package cap (12), the package base (11) is installed with a plurality of laser chips (2), the package shell (1) is installed with a laser beam processing assembly, and output beams (201) of different wavelengths emitted by the plurality of laser chips (2) are all output outward through the laser beam processing assembly; the package base (11) is further installed with a temperature sensor (22), a heat sink (23) and a temperature control module (24), the heat sink (23) is arranged between the temperature control module (24) and the laser chip (2), and one temperature sensor (22), one heat sink (23) and one temperature control module (24) are correspondingly arranged for one laser chip (2).

2. The multi-band laser chip integrated laser of claim 1, wherein, Heat insulation blocks (25) are arranged between adjacent heat sinks (23) and temperature control modules (24).

3. The multi-band laser chip integrated laser of claim 1, wherein, The package shell (1) adopts a butterfly package, and the laser chip (2) adopts an edge-emitting laser chip.

4. The multi-band laser chip integrated laser of claim 1 or 2 or 3, wherein, The laser beam processing assembly comprises a beam combining unit, the beam combining unit adopts a beam combining lens (311) and a reflecting mirror (312), and the beam combining lens (311) adopts a wavelength beam combining lens and / or a polarization beam combining lens.

5. The multi-band laser chip integrated laser of claim 4, wherein, The laser beam processing assembly comprises a first lens (31), and the output beams (201) are shaped after being combined and passing through the first lens (31).

6. The multi-band laser chip integrated laser of claim 1, wherein, The package shell (1) adopts a T0 package, the laser chip (2) adopts a surface-emitting laser chip or an edge-emitting laser chip, and the package shell (1) is provided with an optical path turning structure (21) for changing the direction of the output beam (201) of the edge-emitting laser chip.

7. The multi-band laser chip integrated laser of claim 1 or 2 or 3 or 6, wherein, The laser beam processing assembly comprises a beam combining unit, the beam combining unit adopts a third lens (33) and a spatial beam combining element (32), the third lens (33) converges the output beams (201), and the spatial beam combining element (32) is arranged at a focal point of the output beams (201).

8. The multi-band laser chip integrated laser of claim 7, wherein, The laser beam processing assembly comprises a fourth lens (34), the fourth lens (34) and the third lens (33) form a focusing lens group, the fourth lens (34) preliminarily converges the output beams (201), and the third lens (33) converges the output beams (201) into a focal point.

9. The multi-band laser chip integrated laser of claim 7, wherein, The output beams (201) emitted between the plurality of laser chips (2) are configured to have mutually close inclination angles before passing through the third lens (33).

10. The multi-band laser chip integrated laser of claim 1 or 2 or 3 or 6, wherein, The laser beam processing assembly comprises a sixth lens (36), the output beams (201) are collimated by the sixth lens (36), and the sixth lens (36) adopts a spherical lens or a cylindrical lens group.

11. The multi-band laser chip integrated laser of claim 1 or 2 or 3 or 6, wherein, The laser beam processing assembly comprises an optical path isolator (35), and the output beams (201) pass through the optical path isolator (35) to prevent stray light from being transmitted to the laser chip end.

12. The multi-band laser chip integrated laser of claim 1 or 2 or 3 or 6, wherein, The temperature control module (24) adopts a TEC cooler or a heater.

13. The multi-band laser chip integrated laser of claim 1 or 2 or 3 or 6, wherein, The encapsulation shell (1) is filled with a fixed concentration of mixed target gas, which is used to realize the implementation tracking of the output central wavelength of the plurality of laser chips (2).

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