Organic semiconductor device, light-emitting device, light-receiving device, and display apparatus

Abstract

The present invention provides a light-emitting device having good reliability. The present invention also provides a display apparatus having good reliability and high definition. Provided are: a light-emitting device which has a pixel electrode, a common electrode, and an organic compound layer positioned between the pixel electrode and the common electrode, and in which the organic compound layer has a hole transport layer, a light-emitting layer, and an electron transport layer, the hole transport layer contains an organic compound represented by the following structural formula (h100), and the electron transport layer contains an organic compound represented by the following structural formula (e100); and a display apparatus that has a plurality of said light-emitting devices in a display unit.

Description

Organic semiconductor device, light-emitting device, light-receiving device and display device

[0001] One embodiment of the present invention relates to an organic compound, an organic semiconductor device, a light-emitting device, a photodiode sensor, a display module, a lighting module, a display device, an electronic device, a lighting device, and an electronic device. Note that one embodiment of the present invention is not limited to the above technical field. The technical field of one embodiment of the invention disclosed in this specification etc. relates to an object, a method, or a manufacturing method. Alternatively, one embodiment of the present invention relates to a process, a machine, manufacture, or a composition of matter. Therefore, more specifically, examples of the technical field of one embodiment of the present invention disclosed in this specification include a semiconductor device, a display device, a liquid crystal display device, a lighting device, a power storage device, a memory device, an imaging device, a driving method thereof, or a manufacturing method thereof.

[0002] Light-emitting devices (also called organic EL elements) that utilize electroluminescence (EL) using organic compounds are becoming increasingly practical. The basic structure of these light-emitting devices is a pair of electrodes sandwiching an organic compound layer containing a light-emitting material. By applying a voltage to this device, carriers are injected, and the recombination energy of the carriers is utilized to emit light from the light-emitting material.

[0003] Since light-emitting devices are self-luminous, display devices using these light-emitting devices as pixels have higher visibility than liquid crystal display devices and do not require backlighting. Another major advantage of display devices using such light-emitting devices is that they can be fabricated to be thin and lightweight. Another feature is their extremely fast response speed.

[0004] Furthermore, these light-emitting devices can have a continuous, planar light-emitting layer, which allows them to emit light in a planar manner. This is a feature that is difficult to obtain with point light sources such as incandescent lamps and LEDs, or linear light sources such as fluorescent lamps, making them highly useful as planar light sources for lighting applications.

[0005] Display devices and lighting devices using such light-emitting devices are suitable for a variety of electronic devices, but research and development is ongoing to find light-emitting devices with even better characteristics.

[0006] Patent Document 1 discloses an electron transporting material that, when used in a light-emitting device, can provide a light-emitting device with low driving voltage, high efficiency, and high reliability.

[0007] Furthermore, Patent Document 2 discloses a hole transporting material that can be used in a light-emitting device to obtain a highly efficient light-emitting device.

[0008] US Patent Application Publication No. 2021 / 0336155 JP 2023-029303 A

[0009] An object of one embodiment of the present invention is to provide an organic semiconductor device with good characteristics. Alternatively, an object of one embodiment of the present invention is to provide an organic semiconductor device with good reliability. Alternatively, an object of one embodiment of the present invention is to provide an organic semiconductor device with low driving voltage. Alternatively, an object of one embodiment of the present invention is to provide an organic semiconductor device with good reliability and low driving voltage.

[0010] An object of one embodiment of the present invention is to provide a light-emitting device with good characteristics.An object of one embodiment of the present invention is to provide a light-emitting device with good reliability.An object of one embodiment of the present invention is to provide a light-emitting device with low driving voltage.An object of one embodiment of the present invention is to provide a light-emitting device with good reliability and low driving voltage.

[0011] An object of one embodiment of the present invention is to provide a light-receiving device with good characteristics. Alternatively, an object of one embodiment of the present invention is to provide a light-receiving device with good reliability. Alternatively, an object of one embodiment of the present invention is to provide a light-receiving device with low driving voltage. Alternatively, an object of one embodiment of the present invention is to provide a light-receiving device with good reliability and low driving voltage.

[0012] Another object of one embodiment of the present invention is to provide an inexpensive display device. Alternatively, another object of another embodiment of the present invention is to provide a display device with favorable characteristics using a common material between light-emitting devices emitting different light colors.

[0013] Another object of one embodiment of the present invention is to provide a semiconductor device that allows for high-density arrangement of organic semiconductor devices and has good characteristics.Another object of one embodiment of the present invention is to provide a semiconductor device that allows for high-density arrangement of organic semiconductor devices and has good reliability.Another object of one embodiment of the present invention is to provide a semiconductor device that allows for high-density arrangement of organic semiconductor devices and has a low driving voltage.Another object of one embodiment of the present invention is to provide a semiconductor device that allows for high-density arrangement of organic semiconductor devices and has a low driving voltage and has good reliability.

[0014] Another object of one embodiment of the present invention is to provide a light-emitting device that can provide a high-definition display device with good characteristics.Another object of one embodiment of the present invention is to provide a light-emitting device that can provide a high-definition display device with good reliability.Another object of one embodiment of the present invention is to provide a high-definition display device that requires a low driving voltage.Another object of one embodiment of the present invention is to provide a light-emitting device that can provide a high-definition display device that requires a low driving voltage and good reliability.

[0015] Another object is to provide any one of an organic semiconductor device, a light-emitting device, a light-receiving device, a display device, an electronic device, and a lighting device that consumes little power, or to provide any one of an electronic device and a lighting device that has high reliability.

[0016] The present invention is intended to solve any one of the above problems.

[0017] One embodiment of the present invention is an organic semiconductor device including an organic compound represented by General Formula (Ge1) and an organic compound represented by General Formula (Gh1).

[0018]

[0019] In the general formula (Ge1), A １ or A ３ each independently represents a nitrogen atom or a carbon atom; A １ or A ３ At least one of the groups represents nitrogen; １ ~L ３ each independently represents a substituted or unsubstituted arylene group having 6 to 30 carbon atoms or a substituted or unsubstituted heteroarylene group having 1 to 30 carbon atoms; Ar １ is a heteroaryl group represented by the general formula (Ge1-1), and Ar ２ and Ar ３ each independently represents any one of a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, and a heteroaryl group represented by the general formula (Ge1-1); l, m, and n each independently represent an integer of 0 to 4; when l, m, and n are 2 or more, a plurality of L １ , L ２ and L ３ may be the same or different. In addition, in general formula (Ge1-1), X represents a sulfur atom or an oxygen atom, and R １ ~R １６ represents a bond to General Formula (Ge1), and the rest each independently represent any one of hydrogen (including deuterium), a substituted or unsubstituted silyl group, a cyano group, a nitro group, a substituted or unsubstituted boron group, a substituted or unsubstituted carbonyl group, a substituted or unsubstituted aryloxy group having 6 to 30 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted haloalkyl group having 1 to 10 carbon atoms, fluorine, a substituted or unsubstituted alkyl group having 1 to 8 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, and a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms.

[0020]

[0021] In the above general formula (Gh1), ​​Ar ４represents a substituted or unsubstituted fluorenyl group or a substituted or unsubstituted spirobi[9H-fluoren]-yl group; Ar ５ represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms; B １ represents any one of a substituted or unsubstituted dibenzofuranyl group, a substituted or unsubstituted dibenzothiophenyl group, a substituted or unsubstituted benzonaphthofuranyl group, a substituted or unsubstituted benzonaphthothiophenyl group, a substituted or unsubstituted dinaphthofuranyl group, and a substituted or unsubstituted dinaphthothiophenyl group. ４ ~L ６ each independently represents a substituted or unsubstituted arylene group having 6 to 30 carbon atoms or a substituted or unsubstituted heteroarylene group having 1 to 30 carbon atoms; α, β, and γ each independently represent an integer of 0 to 4; when α, β, and γ are 2 or more, a plurality of L's corresponding to α, β, and γ are ４ , L ５ and L ６ may be the same or different.

[0022] Another embodiment of the present invention is an organic semiconductor device having the above structure, in which the organic compound represented by General Formula (Gh1) is an organic compound represented by General Formula (Gh3):

[0023]

[0024] In the above general formula (Gh3), Ar ４ represents a substituted or unsubstituted fluorenyl group or a substituted or unsubstituted spirobi[9H-fluoren]-yl group; Ar ５ represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms; B １represents any one of a substituted or unsubstituted dibenzofuranyl group, a substituted or unsubstituted dibenzothiophenyl group, a substituted or unsubstituted benzonaphthofuranyl group, a substituted or unsubstituted benzonaphthothiophenyl group, a substituted or unsubstituted dinaphthofuranyl group, and a substituted or unsubstituted dinaphthothiophenyl group.

[0025] Another embodiment of the present invention is a light-emitting device including a pixel electrode, a common electrode, and an organic compound layer located between the pixel electrode and the common electrode, wherein the organic compound layer contains an organic compound represented by General Formula (Ge1) and an organic compound represented by General Formula (Gh1).

[0026] Another embodiment of the present invention is a light-emitting device having the above structure, in which the organic compound layer has a light-emitting layer, and the organic compound represented by General Formula (Ge1) is included between the light-emitting layer and the common electrode.

[0027] Another embodiment of the present invention is a light-emitting device having the above structure, in which the organic compound represented by General Formula (Ge1) is contained in a layer in contact with the light-emitting layer.

[0028] Another embodiment of the present invention is a light-emitting device having the above structure, in which the organic compound layer has a light-emitting layer, and the organic compound represented by General Formula (Gh1) is included between the light-emitting layer and the pixel electrode.

[0029] Another embodiment of the present invention is a light-emitting device having the above structure, in which the organic compound represented by General Formula (Gh1) is contained in a layer in contact with the light-emitting layer.

[0030] Alternatively, another embodiment of the present invention is a light-emitting device having the above structure, in which the organic compound layer has a light-emitting layer, the organic compound represented by the general formula (Ge1) is contained between the light-emitting layer and the common electrode, and the organic compound represented by the general formula (Gh1) is contained between the light-emitting layer and the pixel electrode.

[0031] Another embodiment of the present invention is a light-emitting device having the above structure, in which the organic compound represented by the general formula (Ge1) and the organic compound represented by the general formula (Gh1) are contained in layers in contact with the light-emitting layer.

[0032] Alternatively, another embodiment of the present invention is a tandem light-emitting device including a pixel electrode, a common electrode, and an organic compound layer located between the pixel electrode and the common electrode, the organic compound layer including a first light-emitting unit, a second light-emitting unit, and an intermediate layer located between the first light-emitting unit and the second light-emitting unit, the first light-emitting unit being located between the pixel electrode and the intermediate layer and the second light-emitting unit being located between the intermediate layer and the common electrode, the first light-emitting unit having a first light-emitting layer, and the second light-emitting unit having a second light-emitting layer, the organic compound represented by general formula (Ge1) being included between the first light-emitting layer and the intermediate layer and / or between the second light-emitting layer and the common electrode, and the organic compound represented by general formula (Gh1) being included between the pixel electrode and the first light-emitting layer and / or between the intermediate layer and the second light-emitting layer.

[0033] Another embodiment of the present invention is a tandem light-emitting device having the above structure, in which the organic compound represented by General Formula (Ge1) is contained in one or both of a layer in contact with the first light-emitting layer and a layer in contact with the second light-emitting layer, and the organic compound represented by General Formula (Gh1) is contained in one or both of a layer in contact with the first light-emitting layer and a layer in contact with the second light-emitting layer.

[0034] Another embodiment of the present invention is a tandem light-emitting device having the above structure, in which the organic compound represented by General Formula (Ge1) is contained in a layer in contact with the first light-emitting layer and a layer in contact with the second light-emitting layer, and the organic compound represented by General Formula (Gh1) is contained in a layer in contact with the first light-emitting layer and a layer in contact with the second light-emitting layer.

[0035] Another embodiment of the present invention is a light-emitting device having the above structure, in which the organic compound layer has a light-emitting layer containing the organic compound represented by General Formula (Ge1).

[0036] Another embodiment of the present invention is a light-emitting device having the above structure, in which the organic compound layer has a light-emitting layer, and the light-emitting layer contains the organic compound represented by General Formula (Gh1).

[0037] Another embodiment of the present invention is a light-emitting device having the above structure, in which the organic compound layer has a light-emitting layer, and the light-emitting layer contains the organic compound represented by General Formula (Ge1) and the organic compound represented by General Formula (Gh1).

[0038] Alternatively, another embodiment of the present invention is a tandem light-emitting device including a pixel electrode, a common electrode, and an organic compound layer located between the pixel electrode and the common electrode, the organic compound layer including a first light-emitting unit, a second light-emitting unit, and an intermediate layer located between the first light-emitting unit and the second light-emitting unit, the first light-emitting unit being located between the pixel electrode and the intermediate layer, the second light-emitting unit being located between the intermediate layer and the common electrode, the first light-emitting unit having a first light-emitting layer, and the second light-emitting unit having a second light-emitting layer, wherein one or both of the first light-emitting layer and the second light-emitting layer contain the organic compound represented by General Formula (Ge1), and one or both of the first light-emitting layer and the second light-emitting layer contain the organic compound represented by General Formula (Gh1).

[0039] Alternatively, another embodiment of the present invention is a light-receiving device having a pixel electrode, a common electrode, and an organic compound layer located between the pixel electrode and the common electrode, wherein the organic compound layer contains an organic compound represented by the general formula (Ge1) and an organic compound represented by the general formula (Gh1).

[0040] Another embodiment of the present invention is a light-receiving device having the above structure, in which the organic compound layer has a photoelectric conversion layer, and the organic compound represented by the general formula (Ge1) is included between the photoelectric conversion layer and the common electrode.

[0041] Another embodiment of the present invention is a light-receiving device having the above structure, in which the organic compound layer has a photoelectric conversion layer, and the organic compound represented by the general formula (Gh1) is included between the photoelectric conversion layer and the pixel electrode.

[0042] Alternatively, another embodiment of the present invention is a light-receiving device having the above structure, in which the organic compound layer has a photoelectric conversion layer, an organic compound represented by the general formula (Ge1) is included between the photoelectric conversion layer and the common electrode, and an organic compound represented by the general formula (Gh1) is included between the photoelectric conversion layer and the pixel electrode.

[0043] Alternatively, another aspect of the present invention is an organic semiconductor device among a plurality of organic semiconductor devices included in an organic semiconductor device group, the organic semiconductor device group having a first electrode group formed on the same insulating surface, a second electrode facing the first electrode group, and a first layer group located between the first electrode group and the second electrode, wherein the first electrode group is made up of a plurality of first electrodes that are independent for each of the plurality of organic semiconductor devices, the first layer group is made up of a plurality of first layers that are independent for each of the plurality of organic semiconductor devices, and the second electrode is a continuous electrode shared by the plurality of organic semiconductor devices. the organic semiconductor device has a first electrode that is one of the first electrode group, the second electrode, and a first layer that is one of the first layer group, the second electrode and the first layer overlap with the first electrode, the first layer contains an organic compound represented by the general formula (Ge1) and an organic compound represented by the general formula (Gh1), ​​and the distance between the first layer of the organic semiconductor device and a first layer of another organic semiconductor device adjacent to the organic semiconductor device is 0.1 μm or more and 5 μm or less.

[0044] Alternatively, another aspect of the present invention is a light-emitting device among a plurality of light-emitting devices included in a light-emitting device group, the light-emitting device having a first electrode group formed on the same insulating surface, a second electrode facing the first electrode group, and a first layer group located between the first electrode group and the second electrode, wherein the first electrode group is made up of a plurality of first electrodes independent for each of the plurality of light-emitting devices, the first layer group is made up of a plurality of first layers independent for each of the plurality of light-emitting devices, and the second electrode is a continuous conductive layer shared by the plurality of light-emitting devices. The light-emitting device has a first electrode which is one of the first electrode group, the second electrode, and a first layer which is one of the first layer group, the second electrode and the first layer overlapping the first electrode, the first layer including a light-emitting layer, the first layer including an organic compound represented by the general formula (Ge1) and an organic compound represented by the general formula (Gh1), ​​and the distance between the first layer of the light-emitting device and the first layer of another light-emitting device adjacent to the light-emitting device is 0.1 μm or more and 5 μm or less.

[0045] Another embodiment of the present invention is a light-emitting device having the above structure, in which the organic compound represented by the general formula (Ge1) is included between the light-emitting layer and the second electrode, and the organic compound represented by the general formula (Gh1) is included between the first electrode and the light-emitting layer.

[0046] Another embodiment of the present invention is a display device including a first light-emitting device and a second light-emitting device formed on an insulating surface. The first light-emitting device includes a first electrode, a second electrode, and a first organic compound layer located between the first electrode and the second electrode. The second light-emitting device includes a third electrode, a fourth electrode, and a second organic compound layer located between the third electrode and the fourth electrode. The first organic compound layer includes a first light-emitting layer, and the second organic compound layer includes a second light-emitting layer. The second electrode and the fourth electrode are part of a single continuous conductive layer. A distance between the first organic compound layer and the second organic compound layer is 0.1 μm to 5 μm. One or both of the first organic compound layer and the second organic compound layer includes an organic compound represented by General Formula (Ge1) and an organic compound represented by General Formula (Gh1).

[0047] Another embodiment of the present invention includes a first light-emitting device and a second light-emitting device formed on an insulating surface, the first light-emitting device including a first electrode, a second electrode, a first organic compound layer positioned between the first electrode and the second electrode, and a third organic compound layer positioned between the first organic compound layer and the second electrode, and the second light-emitting device including a third electrode, a fourth electrode, a second organic compound layer positioned between the third electrode and the fourth electrode, and a fourth organic compound layer positioned between the second organic compound layer and the fourth electrode, the first organic compound layer has a first light-emitting layer, the second organic compound layer has a second light-emitting layer, the second electrode and the fourth electrode are part of a continuous conductive layer, the third organic compound layer and the fourth organic compound layer are part of a continuous film, the distance between the first organic compound layer and the second organic compound layer is 0.1 μm or more and 5 μm or less, and one or both of the first organic compound layer and the second organic compound layer contains an organic compound represented by the general formula (Ge1) and an organic compound represented by the general formula (Gh1).

[0048] Another embodiment of the present invention is a display device including a light-emitting device and a light-receiving device formed on an insulating surface. The light-emitting device includes a first electrode, a second electrode, and a first organic compound layer located between the first electrode and the second electrode. The light-receiving device includes a third electrode, a fourth electrode, and a second organic compound layer located between the third electrode and the fourth electrode. The first organic compound layer includes a light-emitting layer. The second organic compound layer includes a photoelectric conversion layer. The second electrode and the fourth electrode are part of a continuous conductive layer. A distance between the first organic compound layer and the second organic compound layer is 0.1 μm to 5 μm. One or both of the first organic compound layer and the second organic compound layer includes an organic compound represented by General Formula (Ge1) and an organic compound represented by General Formula (Gh1).

[0049] Alternatively, another embodiment of the present invention includes a light-emitting device and a light-receiving device formed on an insulating surface. The light-emitting device includes a first electrode, a second electrode, a first organic compound layer positioned between the first electrode and the second electrode, and a third organic compound layer positioned between the first organic compound layer and the second electrode. The light-receiving device includes a third electrode, a fourth electrode, a second organic compound layer positioned between the third electrode and the fourth electrode, and a fourth organic compound layer positioned between the second organic compound layer and the fourth electrode. the organic compound layer has a light-emitting layer, the second organic compound layer has a photoelectric conversion layer, the second electrode and the fourth electrode are part of a continuous conductive layer, the third organic compound layer and the fourth organic compound layer are part of a continuous film, the distance between the first organic compound layer and the second organic compound layer is 0.1 μm or more and 5 μm or less, and one or both of the first organic compound layer and the second organic compound layer contains an organic compound represented by the general formula (Ge1) and an organic compound represented by the general formula (Gh1).

[0050] Alternatively, another aspect of the present invention is the above-mentioned structure, １is a substituted or unsubstituted dibenzofuranyl group, a substituted or unsubstituted dibenzothiophenyl group, a substituted or unsubstituted benzo[b]naphtho[1,2-d]furanyl group, a substituted or unsubstituted benzo[b]naphtho[2,1-b]furanyl group, a substituted or unsubstituted benzo[b]naphtho[2,3-d]furanyl group, a substituted or unsubstituted benzo[b]naphtho[2,1-d]thiophenyl group, a substituted or unsubstituted Benzo[b]naphtho[2,1-b]thiophenyl group, substituted or unsubstituted benzo[b]naphtho[2,3-d]thiophenyl group, substituted or unsubstituted dinaphtho[1,2-d:1',2'-d]furanyl group, substituted or unsubstituted dinaphtho[1,2-d:2',1'-b]furanyl group, substituted or unsubstituted dinaphtho[1,2-d:2',3'-d]furanyl group, substituted or unsubstituted dinaphtho[2,1-b :2',1'-b]furanyl group, a substituted or unsubstituted dinaphtho[2,1-b:2',3'-d]furanyl group, a substituted or unsubstituted dinaphtho[2,3-d:2',3'-d]furanyl group, a substituted or unsubstituted dinaphtho[1,2-d:1',2'-d]thiophenyl group, a substituted or unsubstituted dinaphtho[1,2-d:2',1'-b]thiophenyl group, a substituted or unsubstituted dinaphtho[1,2-d:2' The organic semiconductor device, light-emitting device, light-receiving device, or display device is an organic semiconductor device, light-emitting device, light-receiving device, or display device, wherein the organic semiconductor device is any one of a substituted or unsubstituted dinaphtho[2,1-b:2',1'-b]thiophenyl group, a substituted or unsubstituted dinaphtho[2,1-b:2',3'-d]thiophenyl group, a substituted or unsubstituted dinaphtho[2,3-d:2',3'-d]thiophenyl group, and a substituted or unsubstituted dinaphtho[2,1-b:2',1'-b]thiophenyl group.

[0051] Another embodiment of the present invention is a display device including any of the above light-emitting devices.

[0052] Another embodiment of the present invention is an electronic device including any of the above light-emitting devices and a sensor, an operation button, a speaker, or a microphone.

[0053] Another embodiment of the present invention is a lighting device including the above-described light-emitting device and a housing.

[0054] According to one embodiment of the present invention, a light-emitting device with high emission efficiency can be provided. Alternatively, according to one embodiment of the present invention, a light-emitting device with high reliability can be provided. Alternatively, a display device, an electronic device, or a lighting device with low power consumption can be provided. Alternatively, a display device, an electronic device, or a lighting device with high reliability can be provided.

[0055] Note that the description of these effects does not preclude the existence of other effects. Note that one embodiment of the present invention does not necessarily have all of these effects. Note that effects other than these will become apparent from the description in the specification, drawings, claims, etc., and it is possible to extract other effects from the description in the specification, drawings, claims, etc.

[0056] FIGS. 1A to 1D are schematic diagrams of a light-emitting device according to one embodiment of the present invention. FIG. 2 is a schematic diagram of a light-receiving device according to one embodiment of the present invention. FIGS. 3A and 3B are diagrams of a display device according to one embodiment of the present invention. FIGS. 4A and 4B are diagrams of a display device according to one embodiment of the present invention. FIGS. 5A to 5E are cross-sectional views illustrating an example of a manufacturing method of a display device. FIGS. 6A to 6D are cross-sectional views illustrating an example of a manufacturing method of a display device. FIGS. 7A to 7D are cross-sectional views illustrating an example of a manufacturing method of a display device. FIGS. 8A to 8C are cross-sectional views illustrating an example of a manufacturing method of a display device. FIGS. 9A to 9C are cross-sectional views illustrating an example of a manufacturing method of a display device. FIGS. 10A to 10C are cross-sectional views illustrating an example of a manufacturing method of a display device. FIGS. 11A and 11B are perspective views illustrating a structural example of a display module. FIGS. 12A and 12B are cross-sectional views illustrating a structural example of a display device. FIG. 13 is a perspective view illustrating a structural example of a display device. FIG. 14 is a cross-sectional view illustrating a structural example of a display device. FIG. 15 is a cross-sectional view illustrating a structural example of a display device. 16A to 16C are cross-sectional views showing exemplary configurations of display devices. FIG. 17 is a cross-sectional view showing an exemplary configuration of a display device. FIGS. 18A to 18C are diagrams showing exemplary configurations of a display device. FIGS. 19A and 19D are diagrams showing exemplary electronic devices. FIGS. 20A and 20F are diagrams showing exemplary electronic devices. FIGS. 21A to 21G are diagrams showing exemplary electronic devices. FIG. 22 is a diagram showing current density-voltage characteristics of light-emitting device B1 and comparative light-emitting device B1. FIG. 23 is a diagram showing blue index-luminance characteristics of light-emitting device B1 and comparative light-emitting device B1. FIG. 24 is a diagram showing normalized luminance-time change characteristics of light-emitting device B1 and comparative light-emitting device B1. FIG. 25 is a diagram showing current density-voltage characteristics of light-emitting device G1 and comparative light-emitting device G1. FIG. 26 is a diagram showing current efficiency-luminance characteristics of light-emitting device G1 and comparative light-emitting device G1. FIG. 27 is a diagram showing normalized luminance-time change characteristics of light-emitting device G1 and comparative light-emitting device G1. FIG. 28 is a graph showing the current density-voltage characteristics of the light-emitting device R1 and the comparative light-emitting device R1.Fig. 29 is a graph showing the current efficiency-luminance characteristics of light-emitting device R1 and comparative light-emitting device R1. Fig. 30 is a graph showing the normalized luminance-time change characteristics of light-emitting device R1 and comparative light-emitting device R1. Fig. 31 is a graph showing the current density-voltage characteristics of light-emitting device B2-1, light-emitting device B2-2, comparative light-emitting device B2-1, and comparative light-emitting device B2-2.

[0057] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it will be readily understood by those skilled in the art that various changes in form and details can be made without departing from the spirit and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the description of the embodiments shown below.

[0058] In this specification, etc., a device fabricated using a metal mask or an FMM (fine metal mask, high-resolution metal mask) may be referred to as a device with an MM (metal mask) structure. In addition, in this specification, etc., a device fabricated without using a metal mask or an FMM may be referred to as a device with an MML (metal maskless) structure.

[0059] (Embodiment 1) An organic semiconductor device has at least a pair of electrodes (a first electrode and a second electrode) and an organic compound layer, and the organic compound layer has an active layer or active region. The organic compound layer preferably has a laminated structure made up of functional layers each containing an organic compound that is functionally separated and has properties according to its role, as shown in Figure 1.

[0060] These functional layers are required to have a variety of functions, and typical examples of functional layers include a carrier injection layer, a carrier transport layer, an active layer (e.g., a light-emitting layer, a photoelectric conversion layer), a charge generation layer, a carrier blocking layer, and an exciton blocking layer. Each functional layer may also have other functions. For example, the electron blocking layer is assumed to transport holes to the light-emitting layer, and the hole blocking layer is assumed to transport electrons to the light-emitting layer, so they can also be called carrier transport layers (hole transport layers or electron transport layers).

[0061] FIG. 1A illustrates, as an example of an organic semiconductor device, a light-emitting device having, as an organic compound layer 103, a laminated structure consisting of functional layers, i.e., a hole injection layer 111, a hole transport layer 112, an active layer (light-emitting layer 113), an electron transport layer 114, and an electron injection layer 115, between a first electrode 101 and a second electrode 102 provided on an insulating layer 1000.

[0062] As described above, each functional layer is composed of an organic compound having properties corresponding to the function required for that layer. Therefore, the development of organic compounds having properties suitable for each functional layer has been actively pursued, and many organic compounds have been proposed and put to practical use.

[0063] Here, the characteristics of an organic semiconductor device may change significantly depending on the combination of materials selected for each functional layer. That is, even if organic compound layers are constructed using organic compounds that are considered to be optimal in terms of the functions required for each functional layer, an organic semiconductor device with better characteristics may not necessarily be obtained.

[0064] This includes the highest occupied molecular orbital (HOMO) level, lowest unoccupied molecular orbital (LUMO) level, and lowest singlet excited state (S １ level), the lowest triplet excited level (T １ Some characteristics can be predicted based on the relative positions of the energy levels (e.g., the temperature, the temperature of the semiconductor, etc.), while other characteristics are difficult to predict at present. For example, reliability is a characteristic that is relatively difficult to predict.

[0065] Furthermore, since display devices combine different colors of light to produce a full-color display, in the case of a side-by-side display device, typified by a so-called color-coded display, light-emitting devices that emit different colors of light are formed adjacent to each other in the display area. In this case, costs can be reduced if a common material can be used for the light-emitting devices that emit different colors of light. However, since light-emitting devices that emit different colors of light have different light emission energies, it is not easy to find a material and its combination that can be used in common for the light-emitting devices that emit different colors of light and that can achieve good characteristics.

[0066] Furthermore, although a semiconductor device in which the organic compound layer 103 is processed by photolithography can provide organic semiconductor devices at a very high density, the organic compound layer 103 is exposed to air and water during processing, which affects its characteristics. There is little knowledge about the resistance of organic semiconductor devices to processing in such harsh environments, and there are almost no guidelines for selecting and combining materials.

[0067] In this situation, the present inventors have found that an organic semiconductor device containing a specific combination of organic compounds exhibits excellent characteristics. That is, an organic semiconductor device containing an organic compound represented by the following general formula (Ge1) and an organic compound represented by the following general formula (Gh1) can be an organic semiconductor device that not only has a low driving voltage but also has excellent reliability. The present invention can be suitably used for blue light-emitting devices, particularly blue fluorescent devices.

[0068] Furthermore, a light-emitting device having an organic compound represented by the following general formula (Ge1) and an organic compound represented by the following general formula (Gh1) can be a light-emitting device that not only has a low driving voltage and high reliability, but also has a small decrease in luminous efficiency in a low luminance region.

[0069] Furthermore, a display device using an organic compound represented by the following general formula (Ge1) and an organic compound represented by the following general formula (Gh1) as a common layer in light-emitting devices that emit different light colors can obtain good characteristics (mainly high reliability and low driving voltage) in the light-emitting devices that emit either light color, thereby making it possible to provide a display device with good characteristics.

[0070] Furthermore, it has been found that a semiconductor device having an organic semiconductor device in which an organic compound layer is processed by photolithography can exhibit favorable characteristics (mainly high reliability and low driving voltage) by including an organic compound represented by the following general formula (Ge1) and an organic compound represented by the following general formula (Gh1), ​​thereby making it possible to provide a semiconductor device with favorable characteristics. Furthermore, although an increase in driving voltage is a major problem in semiconductor devices in which an organic compound layer is processed by photolithography, the increase can be kept small in a semiconductor device according to one embodiment of the present invention.

[0071] The organic compound represented by General Formula (Ge1) included in the organic semiconductor device of one embodiment of the present invention has the following structure.

[0072]

[0073] In the general formula (Ge1), A １ or A ３ each independently represents a nitrogen atom or a carbon atom; A １ or A ３ At least one of A represents nitrogen. １ or A ３ It is preferable that two or more of the groups contain nitrogen, because general formula (Ge1) exhibits high electron transport properties and an organic semiconductor device with low power consumption can be provided, and it is more preferable that all three groups contain nitrogen, because this exhibits even higher electron transport properties than when two groups contain nitrogen, and an organic semiconductor device with even lower power consumption can be provided.

[0074] Ar １ represents a heteroaryl group represented by the following general formula (Ge1-1): ２ and Ar ３Each of Ar independently represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms. ２ and Ar ３ is preferably either a substituted or unsubstituted aryl group having 6 to 10 carbon atoms or a substituted or unsubstituted heteroaryl group having 1 to 9 carbon atoms, in order to combine high heat resistance and high sublimability, more preferably either a substituted or unsubstituted phenyl group or a substituted or unsubstituted naphthyl group, in order to combine high heat resistance and high sublimability and to provide an organic semiconductor device with high reliability, and is even more preferably an unsubstituted phenyl group or an unsubstituted naphthyl group, in order to combine high heat resistance and high sublimability, to provide an organic semiconductor device with high carrier mobility and high reliability. ２ and Ar ３ may each independently be a heteroaryl group represented by the following general formula (Ge1-1).

[0075]

[0076] In general formula (Ge1-1), X represents a sulfur atom or an oxygen atom, and an oxygen atom is preferred because it can reduce the refractive index, provide a highly reliable organic semiconductor device, and enable the organic compound to be synthesized at low cost. Alternatively, X is preferred to be a sulfur atom because it can provide an organic compound with a high refractive index, and a light-emitting device having a film of the organic compound on the light-extracting surface can achieve high light-extraction efficiency, thereby enabling the provision of a light-emitting device with low power consumption.

[0077] In addition, in the general formula (Ge1-1), R １ ~R １６ is a bond between the general formula (Ge1), that is, L １ ~L ３ A bond with any one of １ and A ２ A bond to the carbon between ２ and A ３ or A １ and A ３and the remainders each independently represent any one of hydrogen (including deuterium), a substituted or unsubstituted silyl group, a cyano group, a nitro group, a substituted or unsubstituted boron group, a substituted or unsubstituted carbonyl group, a substituted or unsubstituted aryloxy group having 6 to 30 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted haloalkyl group having 1 to 10 carbon atoms, fluorine, a substituted or unsubstituted alkyl group having 1 to 8 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, and a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms.

[0078] R １ ~R １６ When one or more of R are alkyl groups, the organic compound represented by the general formula (Ge1) has high solubility and can be highly purified. In addition, the sublimation property is improved, and deposition at low temperature is possible, so a highly pure film can be obtained. １ ~R １６ An organic compound represented by the general formula (Ge1), in which one or more of the groups represented by the general formula (Ge1) are alkyl groups, can be an organic compound with a low refractive index. Therefore, by using such an organic compound with a low refractive index in a light-emitting device, the light extraction efficiency of the light-emitting device can be increased, and a light-emitting device with low power consumption can be provided, which is more preferable.

[0079] R １ ~R １６ An organic compound represented by the general formula (Ge1) in which one or more of R is an aryl group is more preferable because it can realize high carrier mobility and provide an organic semiconductor device with low power consumption. １ ~R １６ In terms of synthesis cost and ease, it is preferable that all of the substituents other than the one representing the bond between the general formula (Ge1) are hydrogen atoms.

[0080] In addition, in the general formula (Ge1), L １ ~L ３each independently represents a substituted or unsubstituted arylene group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroarylene group having 1 to 30 carbon atoms, and is preferably either a substituted or unsubstituted arylene group having 6 to 10 carbon atoms or a substituted or unsubstituted heteroarylene group having 1 to 9 carbon atoms in order to realize high carrier mobility, more preferably a substituted or unsubstituted phenylene group or a substituted or unsubstituted naphthalene-diyl group in order to realize high carrier mobility and to provide an organic compound with excellent sublimation properties, and even more preferably an unsubstituted phenylene group in order to reduce synthesis costs.

[0081] In addition, in the general formula (Ge1), l, m, and n each independently represent an integer of 0 to 4. When l, m, and n are 2 or more, a plurality of L corresponding to l, m, and n are １ , L ２ and L ３ may be the same or different. It is preferable that l and m are each independently 1 or 2, since the deposition temperature is lowered and the purity of the film after deposition is increased, thereby providing a highly reliable organic semiconductor device, and it is preferable that n is 0, since high carrier mobility can be achieved and an organic semiconductor device with low power consumption can be provided. It is also preferable that n is 0 or 1, since A １ or A ３ is preferable because it can enhance the carrier transport property of a skeleton in which electron transporting orbitals centered on a six-membered ring containing

[0082] Since the heteroaryl group represented by the general formula (Ge1-1) has a highly heat-resistant skeleton, it is preferable that the organic compound represented by the general formula (Ge1) contain two or less heteroaryl groups represented by the general formula (Ge1-1). This prevents the deposition temperature from becoming too high, suppressing decomposition during deposition and allowing the formation of a highly pure deposited film with few impurities, thereby enabling the production of a highly reliable organic semiconductor device. Furthermore, since the heteroaryl group represented by the general formula (Ge1-1) is bulky, limiting the number of heteroaryl groups contained in the organic compound represented by the general formula (Ge1) to two or less allows the production of an organic compound with high electron mobility and the provision of an organic semiconductor device with low driving voltage. In order to achieve deposition at a lower temperature and higher electron transport properties, it is more preferable that the organic compound represented by the general formula (Ge1) contain one heteroaryl group.

[0083] In the above general formula (Ge1), examples of the aryl group having 6 to 30 carbon atoms include a phenyl group, a tolyl group, a xylyl group, a biphenyl group, an indenyl group, a naphthyl group, a fluorenyl group, a spirofluorenyl group, a phenanthrenyl group, a triphenylenyl group, an anthracenyl group, a fluoranthenyl group, etc. When the aryl group having 6 to 30 carbon atoms has a substituent, examples of the substituent include an alkyl group having 1 to 4 carbon atoms, a cycloalkyl group having 3 to 6 carbon atoms, or an aryl group having 6 to 13 carbon atoms.

[0084] In the above General Formula (Ge1), examples of the heteroaryl group having 1 to 30 carbon atoms include a pyridinyl group, a pyrimidinyl group, a triazinyl group, a phenanthrolineyl group, a carbazolyl group, a pyrrolyl group, a thiophenyl group, a furanyl group, an imidazolyl group, a bipyridinyl group, a bipyrimidinyl group, a pyrazinyl group, a bipyrazinyl group, a quinolinyl group, an isoquinolinyl group, a benzoquinolinyl group, a quinoxalinyl group, a benzoquinoxalinyl group, a dibenzoquinoxalinyl group, an azofluorenyl group, a diazofluorenyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a dibenzofuranyl group, a benzonaphthofuranyl group, and a dinaphthofuranyl group. Examples of the alkyl group include quinoxalin-yl, dibenzothiophen-yl, benzonaphthothiophen-yl, dinaphthothiophen-yl, benzofuropyridin-yl, benzofuropyrimidin-yl, benzothiopyridin-yl, benzothiopyrimidin-yl, naphthofuropyridin-yl, naphthofuropyrimidin-yl, naphthothiopyridin-yl, naphthothiopyrimidin-yl, dibenzoquinoxalin-yl, acridine-yl, xanthene-yl, phenothiazin-yl, phenoxazin-yl, phenazin-yl, triazol-yl, oxazol-yl, oxadiazol-yl, thiazol-yl, thiadiazol-yl, benzimidazol-yl, and pyrazol-yl groups. When the heteroaryl group having 1 to 30 carbon atoms has a substituent, examples of the substituent include an alkyl group having 1 to 4 carbon atoms, a cycloalkyl group having 3 to 6 carbon atoms, or an aryl group having 6 to 13 carbon atoms.

[0085] In the above general formula (Ge1), examples of the aryloxy group having 6 to 30 carbon atoms include a phenoxy group, an o-tolyloxy group, an m-tolyloxy group, a p-tolyloxy group, a mesityloxy group, an o-biphenyloxy group, an m-biphenyloxy group, a p-biphenyloxy group, a 1-naphthyloxy group, a 2-naphthyloxy group, a 2-fluorenyloxy group, etc. When the aryloxy group having 6 to 30 carbon atoms has a substituent, examples of the substituent include an alkyl group having 1 to 4 carbon atoms, a cycloalkyl group having 3 to 6 carbon atoms, or an aryl group having 6 to 13 carbon atoms.

[0086] In the above general formula (Ge1), examples of the alkoxy group having 1 to 10 carbon atoms include alkenyloxy groups such as a methoxy group, an ethoxy group, a propoxy group, an isopropoxy group, a t-butoxy group, a sec-butoxy group, an isobutoxy group, a pentyloxy group, an octyloxy group, an allyloxy group, a cyclohexyloxy group, a benzyloxy group, a vinyloxy group, a propenyloxy group, a butenyloxy group, a pentenyloxy group, and a hexenyloxy group. When the alkoxy group having 1 to 10 carbon atoms has a substituent, examples of the substituent include an alkyl group having 1 to 4 carbon atoms, a cycloalkyl group having 3 to 6 carbon atoms, or an aryl group having 6 to 13 carbon atoms.

[0087] In the above general formula (Ge1), examples of the haloalkyl group having 1 to 10 carbon atoms include a fluoromethyl group, a difluoromethyl group, a difluorochloromethyl group, a trifluoromethyl group, a chloromethyl group, a dichloromethyl group, a bromomethyl group, a 1,1-difluoroethyl group, a 2,2,2-trifluoroethyl group, a 1,1,2,2-tetrafluoroethyl group, a pentafluoroethyl group, a 3,3,3-trifluoropropyl group, a 1,1,1,3,3,3-hexafluoroisopropyl group, a 1,1,2,2,3,3,3-heptafluoropropyl group, etc. When the haloalkyl group having 1 to 10 carbon atoms has a substituent, examples of the substituent include an alkyl group having 1 to 4 carbon atoms, a cycloalkyl group having 3 to 6 carbon atoms, or an aryl group having 6 to 13 carbon atoms.

[0088] In the above general formula (Ge1), examples of the arylene group having 6 to 30 carbon atoms include a phenylene group, a biphenyl-diyl group, a naphthalene-diyl group, a fluorene-diyl group, an acenaphthene-diyl group, an anthracene-diyl group, a phenanthrene-diyl group, a terphenyl-diyl group, a triphenylene-diyl group, a tetracene-diyl group, a benzoanthracene-diyl group, a pyrene-diyl group, a spirobi[9H-fluorene]-diyl group, etc. When the arylene group having 6 to 30 carbon atoms has a substituent, examples of the substituent include an alkyl group having 1 to 4 carbon atoms, a cycloalkyl group having 3 to 6 carbon atoms, or an aryl group having 6 to 13 carbon atoms.

[0089] In the above general formula (Ge1), examples of the heteroarylene group having 1 to 30 carbon atoms include a pyrimidine-diyl group, a pyrazine-diyl group, a pyridazine-diyl group, a triazine-diyl group, a bipyridine-diyl group, a phenanthroline-diyl group, a quinoxaline-diyl group, a dibenzoquinoxaline-diyl group, a quinazoline-diyl group, a benzoquinazoline-diyl group, a dibenzoquinazoline-diyl group, an imidazole-diyl group, a triazole-diyl group, Examples of the heteroarylene group include an oxadiazole-diyl group, a benzimidazole-diyl group, a furodiazine-diyl group, a benzofuropyrimidine-diyl group, a thiophene-diyl group, a furan-diyl group, a benzothiophene-diyl group, a benzofuran-diyl group, a dibenzothiophene-diyl group, a dibenzofuran-diyl group, a benzonaphthothiophene-diyl group, a benzonaphthofuran-diyl group, a dinaphthothiophene-diyl group, a dinaphthofuran-diyl group, etc. When the heteroarylene group having 1 to 30 carbon atoms has a substituent, examples of the substituent include an alkyl group having 1 to 4 carbon atoms, a cycloalkyl group having 3 to 6 carbon atoms, or an aryl group having 6 to 13 carbon atoms.

[0090] In the above general formula (Ge1), examples of the alkyl group having 1 to 8 carbon atoms include a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, a sec-butyl group, an isobutyl group, a tert-butyl group, a pentyl group, an isopentyl group, a sec-pentyl group, a tert-pentyl group, a neopentyl group, a hexyl group, an isohexyl group, a heptyl group, an octyl group, a 3-methylpentyl group, a 2-methylpentyl group, a 2-ethylbutyl group, a 1,2-dimethylbutyl group, a 2,3-dimethylbutyl group, a 2-ethylhexyl group, a 1-ethylpropyl group, a heptyl group, an octyl group, a 3-methylpentyl group, a 2-methylpentyl group, a 2-ethylbutyl group, a 1,2-dimethylbutyl group, and a 2,3-dimethylbutyl group. When the alkyl group having 1 to 8 carbon atoms has a substituent, examples of the substituent include a cycloalkyl group having 3 to 6 carbon atoms and an aryl group having 6 to 13 carbon atoms.

[0091] In the above general formula (Ge1), examples of the cycloalkyl group having 3 to 10 carbon atoms include a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, a 1-methylcyclohexyl group, a cycloheptyl group, a 1-adamantyl group, and a 2-adamantyl group. When the cycloalkyl group having 3 to 10 carbon atoms has a substituent, examples of the substituent include an alkyl group having 1 to 4 carbon atoms, a cycloalkyl group having 3 to 6 carbon atoms, or an aryl group having 6 to 13 carbon atoms.

[0092] In addition, in the above general formula (Ge1), when the silyl group, the boron group, or the carbonyl group has a substituent, examples of the substituent include an alkyl group having 1 to 4 carbon atoms, a cycloalkyl group having 3 to 6 carbon atoms, or an aryl group having 6 to 13 carbon atoms.

[0093] The organic compound represented by general formula (Ge1) having the above-described structure has high electron transport properties, and therefore, by using it in an electron transport region located between an active layer (e.g., a light-emitting layer, a photoelectric conversion layer) and a cathode, an organic semiconductor device with a low driving voltage can be provided.

[0094] The organic compound represented by General Formula (Gh1) included in the organic semiconductor device of one embodiment of the present invention has the following structure.

[0095]

[0096] In the above general formula (Gh1), ​​Ar ４ represents either a substituted or unsubstituted fluorenyl group or a substituted or unsubstituted spirobi[9H-fluoren]-yl group, and an unsubstituted spirobi[9H-fluoren]-yl group is preferred because it can provide an organic compound having high hole transport properties.

[0097] Ar ５ represents either a substituted or unsubstituted aryl group having 6 to 30 carbon atoms or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, and is preferably a substituted or unsubstituted aryl group having 6 to 30 carbon atoms because high carrier mobility can be achieved, and is more preferably a diphenylfluoren-yl group because an organic compound having high heat resistance, high carrier mobility, and high reliability can be provided.

[0098] B １ represents any one of a substituted or unsubstituted dibenzofuranyl group, a substituted or unsubstituted dibenzothiophenyl group, a substituted or unsubstituted benzonaphthofuranyl group, a substituted or unsubstituted benzonaphthothiophenyl group, a substituted or unsubstituted dinaphthofuranyl group, and a substituted or unsubstituted dinaphthothiophenyl group.

[0099] In addition, in the above general formula (Gh1), ​​B １ is preferably a substituted or unsubstituted dibenzofuranyl group or a substituted or unsubstituted dibenzothiophenyl group, since this can provide an organic compound having both high hole mobility and heat resistance, and can realize an organic semiconductor device with low driving voltage, low power consumption, and good reliability. In particular, an unsubstituted dibenzofuranyl group is more preferable, since it can reduce the refractive index of the organic compound represented by the above general formula (Gh1), ​​thereby increasing the light extraction efficiency of the light-emitting device.

[0100] Also, B １is preferably a substituted or unsubstituted benzonaphthofuranyl group or a substituted or unsubstituted benzonaphthothiophenyl group, since this can provide an organic compound having high heat resistance, mobility, and reliability, and can provide an organic semiconductor device with low power consumption and high reliability. １ is a benzo[b]naphtho[1,2-d]furanyl group or a benzo[b]naphtho[1,2-d]furanyl group, is preferable because it can provide an organic semiconductor device with better reliability, a lower driving voltage, and lower power consumption.

[0101] In addition, when the organic semiconductor device is a light-emitting device, B １ The organic compound represented by the above general formula (Gh1), ​​in which is any one of a substituted or unsubstituted dibenzofuranyl group, a substituted or unsubstituted benzonaphthofuranyl group, and a substituted or unsubstituted dinaphthofuranyl group, has a low refractive index and is therefore capable of providing a light-emitting device with good luminous efficiency, and is therefore preferred because it can provide a device with low power consumption.

[0102] In the organic compound represented by the general formula (Gh1), ​​L ４ ~L ６ each independently represents a substituted or unsubstituted arylene group having 6 to 30 carbon atoms or a substituted or unsubstituted heteroarylene group having 1 to 30 carbon atoms. ４ ~L ６ are each independently preferably a substituted or unsubstituted arylene group having 6 to 10 carbon atoms or a substituted or unsubstituted heteroarylene group having 1 to 9 carbon atoms in order to simplify the synthesis, more preferably a substituted or unsubstituted phenylene group or a substituted or unsubstituted naphthalene-diyl group in order to suppress decomposition due to heat in the sublimation purification step or the vapor deposition step, and further preferably an unsubstituted phenylene group.

[0103] α, β, and γ each independently represent an integer of 0 to 4, and 1 or 0 is preferred because it can reduce the molecular weight and the sublimation purification temperature, and 0 is more preferred because it can reduce the synthesis cost. When α, β, and γ are 2 or more, a plurality of L corresponding to α, β, and γ are ４ , L ５ and L ６ may be the same or different.

[0104] In the organic compound represented by general formula (Gh1), ​​it is preferable that α is 0, since high hole mobility can be achieved. In other words, the organic compound represented by general formula (Gh1) is preferably an organic compound represented by the following general formula (Gh2-1) or general formula (Gh2-2).

[0105]

[0106] In the organic compound represented by the general formula (Gh2-1), R ２１ ~R ２９ each independently represents any one of hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 8 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, and a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms. ２１ and R ２２ are each independently preferably either a substituted or unsubstituted alkyl group having 1 to 8 carbon atoms or a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, and more preferably a methyl group or an unsubstituted phenyl group. ２３ ~R ２９ are preferably all hydrogen atoms in terms of synthesis cost and ease of synthesis.

[0107]

[0108] In the organic compound represented by the general formula (Gh2-2), R ３１ ~R ４５each independently represents any one of hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 8 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, and a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms. ２１ and R ２２ are each independently preferably either a substituted or unsubstituted alkyl group having 1 to 8 carbon atoms or a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, and more preferably a methyl group or an unsubstituted phenyl group. ３１ ~R ４５ are preferably all hydrogen atoms in terms of synthesis cost and ease of synthesis.

[0109] The organic compound represented by the general formula (Gh2-2) can be an organic compound having high hole mobility and heat resistance, and it is possible to obtain an organic semiconductor device with low driving voltage and good reliability.

[0110] In the organic compounds represented by the general formula (Gh2), the general formula (Gh2-1), and the general formula (Gh2-2), Ar ５ , B １ , L ５ , L ６ , β and γ are Ar in the organic compound represented by the general formula (Gh1). ５ , B １ , L ５ , L ６ , β and γ are the same as those in the general formula (Gh1), ​​and therefore the description thereof will be omitted.

[0111] In order to reduce synthesis costs, it is preferable that the organic compound represented by general formula (Gh1) has α, β, and γ all set to 0. In other words, the organic compound represented by general formula (Gh1) is preferably an organic compound represented by the following general formula (Gh3), the following general formula (Gh4-1), or the following general formula (Gh4-2).

[0112]

[0113] In the organic compound represented by the general formula (Gh3), Ar４ , Ar ５ and B １ represents Ar in the above general formula (Gh1). ４ , Ar ５ and B １ Since the formula is the same as above, the description thereof will be omitted. Please refer to the corresponding description in the above general formula (Gh1).

[0114]

[0115] Note that among the organic compounds represented by the general formula (Gh4-1), an organic compound having a fluorenyl group bonded at the 2-position has a higher glass transition temperature (Tg) and can provide a light-emitting device with good heat resistance. That is, for the light-emitting device of one embodiment of the present invention, an organic compound represented by the following general formula (Gh5-1) is preferably used.

[0116]

[0117] Furthermore, among the organic compounds represented by the general formula (Gh4-1), an organic compound having a fluorenyl group bonded at the 4-position has a deep HOMO level and therefore an excellent hole-transporting property, and also has a low refractive index, thereby enabling a light-emitting device to be provided that requires a low driving voltage and has high emission efficiency. That is, for a light-emitting device of one embodiment of the present invention, an organic compound represented by the following general formula (Gh5-2) is preferably used.

[0118]

[0119] In the organic compounds represented by the general formula (Gh4-1), the general formula (Gh5-1), and the general formula (Gh5-2), R ５１ ~R ５４ each independently represents any one of hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 8 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, and a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms. ２１ ~R ２９ , Ar ５ , and B １ represents R in the organic compound represented by the general formula (Gh2-1) ２１~R ２９ , Ar ５ , and B １ Since the formula is the same as the formula (Gh2-1), the description thereof will be omitted. Please refer to the corresponding description in the above general formula (Gh2-1).

[0120]

[0121] The organic compound represented by the general formula (Gh4-2) can be an organic compound having high hole mobility and heat resistance, and it is possible to obtain an organic semiconductor device with low driving voltage and good reliability.

[0122] Note that a favorable light-emitting device can be provided by using an organic compound represented by the above general formula (Gh4-2) in which a spirofluorenyl group is bonded at position 2. That is, for a light-emitting device of one embodiment of the present invention, an organic compound represented by the following general formula (Gh6-1) is preferably used.

[0123]

[0124] Furthermore, among the organic compounds represented by the general formula (Gh4-2), an organic compound having a spirofluorenyl group bonded at the 4-position has a deep HOMO level and thus an excellent hole-transporting property, and therefore a light-emitting device with low driving voltage can be provided. That is, for the light-emitting device of one embodiment of the present invention, an organic compound represented by the following general formula (Gh6-2) is preferably used.

[0125]

[0126] R in the organic compounds represented by the general formula (Gh4-2), the general formula (Gh6-1), and the general formula (Gh6-2) ６１ ~R ６４ each independently represents any one of hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 8 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, and a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms. ３１ ~R４５ , Ar ５ , and B １ represents R in the organic compound represented by the general formula (Gh2-2) ３１ ~R ４５ , Ar ５ , and B １ Since the formula is the same as the formula (Gh2-1), the description thereof will be omitted. Please refer to the corresponding description in the above general formula (Gh2-2).

[0127] In the above General Formulas (Gh1) to (Gh6-2), examples of the aryl group having 6 to 30 carbon atoms include a phenyl group, a tolyl group, a xylyl group, a biphenyl group, an indenyl group, a naphthyl group, a fluorenyl group, a spirofluorenyl group, a phenanthrenyl group, a triphenylenyl group, an anthracenyl group, a fluoranthenyl group, etc. When the aryl group having 6 to 30 carbon atoms has a substituent, examples of the substituent include an alkyl group having 1 to 4 carbon atoms, a cycloalkyl group having 3 to 6 carbon atoms, or an aryl group having 6 to 13 carbon atoms.

[0128] In the above General Formulae (Gh1) to (Gh6-2), examples of the heteroaryl group having 1 to 30 carbon atoms include a pyridinyl group, a pyrimidinyl group, a triazinyl group, a phenanthroline-yl group, a carbazolyl group, a pyrrolyl group, a thiophenyl group, a furanyl group, an imidazolyl group, a bipyridinyl group, a bipyrimidinyl group, a pyrazinyl group, a bipyrazinyl group, a quinolinyl group, an isoquinolinyl group, a benzoquinolinyl group, a quinoxalinyl group, a benzoquinoxalinyl group, a dibenzoquinoxalinyl group, an azofluorenyl group, a diazofluorenyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a dibenzofuranyl group, and a benzonaphthofuranyl group. , a dinaphthofuran-yl group, a dibenzothiophen-yl group, a benzonaphthothiophen-yl group, a dinaphthothiophen-yl group, a benzofuropyridin-yl group, a benzofuropyrimidin-yl group, a benzothiopyridin-yl group, a benzothiopyrimidin-yl group, a naphthofuropyridin-yl group, a naphthofuropyrimidin-yl group, a naphthothiopyridin-yl group, a naphthothiopyrimidin-yl group, a dibenzoquinoxalin-yl group, an acridine-yl group, a xanthene-yl group, a phenothiazin-yl group, a phenoxazin-yl group, a phenazin-yl group, a triazol-yl group, an oxazol-yl group, an oxadiazol-yl group, a thiazol-yl group, a thiadiazol-yl group, a benzimidazol-yl group, or a pyrazol-yl group. When the heteroaryl group having 1 to 30 carbon atoms has a substituent, examples of the substituent include an alkyl group having 1 to 4 carbon atoms, a cycloalkyl group having 3 to 6 carbon atoms, or an aryl group having 6 to 13 carbon atoms.

[0129] In the above General Formulas (Gh1) to (Gh6-2), examples of the arylene group having 6 to 30 carbon atoms include a phenylene group, a biphenyl-diyl group, a naphthalene-diyl group, a fluorene-diyl group, an acenaphthene-diyl group, an anthracene-diyl group, a phenanthrene-diyl group, a terphenyl-diyl group, a triphenylene-diyl group, a tetracene-diyl group, a benzoanthracene-diyl group, a pyrene-diyl group, a spirobi[9H-fluorene]-diyl group, etc. When the arylene group having 6 to 30 carbon atoms has a substituent, examples of the substituent include an alkyl group having 1 to 4 carbon atoms, a cycloalkyl group having 3 to 6 carbon atoms, or an aryl group having 6 to 13 carbon atoms.

[0130] In the above general formulae (Gh1) to (Gh6-2), examples of the heteroarylene group having 1 to 30 carbon atoms include a pyrimidine-diyl group, a pyrazine-diyl group, a pyridazine-diyl group, a triazine-diyl group, a bipyridine-diyl group, a phenanthroline-diyl group, a quinoxaline-diyl group, a dibenzoquinoxaline-diyl group, a quinazoline-diyl group, a benzoquinazoline-diyl group, a dibenzoquinazoline-diyl group, an imidazole-diyl group, a triazoloyl group, and a benzoquinazoline-diyl group. Examples of the heteroarylene group include a furan-diyl group, an oxadiazole-diyl group, a benzimidazole-diyl group, a furodiazine-diyl group, a benzofuropyrimidine-diyl group, a thiophene-diyl group, a furan-diyl group, a benzothiophene-diyl group, a benzofuran-diyl group, a dibenzothiophene-diyl group, a dibenzofuran-diyl group, a benzonaphthothiophene-diyl group, a benzonaphthofuran-diyl group, a dinaphthothiophene-diyl group, a dinaphthofuran-diyl group, etc. When the heteroarylene group having 1 to 30 carbon atoms has a substituent, examples of the substituent include an alkyl group having 1 to 4 carbon atoms, a cycloalkyl group having 3 to 6 carbon atoms, or an aryl group having 6 to 13 carbon atoms.

[0131] In the above general formulae (Gh1) to (Gh6-2), examples of the alkyl group having 1 to 8 carbon atoms include a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, a sec-butyl group, an isobutyl group, a tert-butyl group, a pentyl group, an isopentyl group, a sec-pentyl group, a tert-pentyl group, a neopentyl group, a hexyl group, an isohexyl group, a heptyl group, an octyl group, a 3-methylpentyl group, a 2-methylpentyl group, a 2-ethylbutyl group, a 1,2-dimethylbutyl group, a 2,3-dimethylbutyl group, a 2-ethylhexyl group, a 1-ethylpropyl group, a heptyl group, an octyl group, a 3-methylpentyl group, a 2-methylpentyl group, a 2-ethylbutyl group, a 1,2-dimethylbutyl group, and a 2,3-dimethylbutyl group. When the alkyl group having 1 to 8 carbon atoms has a substituent, examples of the substituent include a cycloalkyl group having 3 to 6 carbon atoms and an aryl group having 6 to 13 carbon atoms.

[0132] In the above general formulae (Gh1) to (Gh6-2), examples of the cycloalkyl group having 3 to 10 carbon atoms include a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, a 1-methylcyclohexyl group, a cycloheptyl group, a 1-adamantyl group, and a 2-adamantyl group. When the alkyl group having 1 to 8 carbon atoms has a substituent, examples of the substituent include an alkyl group having 1 to 4 carbon atoms, a cycloalkyl group having 3 to 6 carbon atoms, or an aryl group having 6 to 13 carbon atoms.

[0133] In the above general formulas (Gh1) to (Gh6-2), when the fluorenyl group, the spirobi[9H-fluoren]-yl group, the dibenzofuranyl group, the dibenzothiophenyl group, the benzonaphthofuranyl group, the benzonaphthothiophenyl group, the dinaphthofuranyl group, and the dinaphthothiophenyl group have a substituent, examples of the substituent include an alkyl group having 1 to 4 carbon atoms, a cycloalkyl group having 3 to 6 carbon atoms, or an aryl group having 6 to 13 carbon atoms.

[0134] In the above general formulae (Gh1) to (Gh6-2), B １is a substituted or unsubstituted dibenzofuranyl group, a substituted or unsubstituted dibenzothiophenyl group, a substituted or unsubstituted benzo[b]naphtho[1,2-d]furanyl group, a substituted or unsubstituted benzo[b]naphtho[2,1-b]furanyl group, a substituted or unsubstituted benzo[b]naphtho[2,3-d]furanyl group, a substituted or unsubstituted benzo[b]naphtho[2,1-d]thiophenyl group, a substituted or unsubstituted benzyl a benzo[b]naphtho[2,1-b]thiophenyl group, a substituted or unsubstituted benzo[b]naphtho[2,3-d]thiophenyl group, a substituted or unsubstituted dinaphtho[1,2-d:1',2'-d]furanyl group, a substituted or unsubstituted dinaphtho[1,2-d:2',1'-b]furanyl group, a substituted or unsubstituted dinaphtho[1,2-d:2',3'-d]furanyl group, a substituted or unsubstituted dinaphtho[2,1-b: 2',1'-b]furanyl group, a substituted or unsubstituted dinaphtho[2,1-b:2',3'-d]furanyl group, a substituted or unsubstituted dinaphtho[2,3-d:2',3'-d]furanyl group, a substituted or unsubstituted dinaphtho[1,2-d:1',2'-d]thiophenyl group, a substituted or unsubstituted dinaphtho[1,2-d:2',1'-b]thiophenyl group, a substituted or unsubstituted dinaphtho[1,2-d:2',3 The dinaphtho[2,1-b:2',1'-b]thiophenyl group, a substituted or unsubstituted dinaphtho[2,1-b:2',3'-d]thiophenyl group, or a substituted or unsubstituted dinaphtho[2,3-d:2',3'-d]thiophenyl group is preferably any one of a substituted or unsubstituted dinaphtho[2,1-b:2',1'-b]thiophenyl group, a substituted or unsubstituted dinaphtho[2,1-b:2',3'-d]thiophenyl group, and a substituted or unsubstituted dinaphtho[2,3-d:2',3'-d]thiophenyl group, because this increases the electron tolerance of the organic compound and allows for the provision of a highly reliable organic semiconductor device. In this case, when these groups have a substituent, the substituent can be an alkyl group having 1 to 4 carbon atoms, a cycloalkyl group having 3 to 6 carbon atoms, or an aryl group having 6 to 13 carbon atoms.

[0135] The organic compounds represented by any of the general formulas (Gh1) to (Gh6-2) having the above-described structures have high hole transport properties, and therefore, by using them in an electron transport region located between an active layer (e.g., a light-emitting layer, a photoelectric conversion layer) and an anode, an organic semiconductor device with a low driving voltage can be provided.

[0136] 1D , the organic compounds represented by the general formulas (Gh1) to (Gh6-2) may be used for the cap layer 106. The organic compounds represented by the general formulas (Gh1) to (Gh6-2) have very high heat resistance, a high LUMO level, and at least one oxygen or sulfur atom in the molecular structure, and are therefore expected to have a high refractive index, making them suitable materials for the cap layer 106.

[0137] The organic semiconductor device of one embodiment of the present invention includes an organic compound represented by General Formula (Ge1) and an organic compound represented by any one of General Formulas (Gh1) to (Gh6-2), and thus the organic semiconductor device can have favorable characteristics, particularly favorable driving voltage or reliability. In particular, a blue light-emitting device can have favorable driving voltage and reliability.

[0138] Furthermore, a light-emitting device including an organic compound represented by the following general formula (Ge1) and an organic compound represented by any one of the following general formulas (Gh1) to (Gh6-2) can be a light-emitting device that has a low driving voltage, high reliability, and small luminance reduction in a low luminance region. If the luminance reduction in the low luminance region is large, it may be difficult to adjust the display when a display device is formed together with a light-emitting device that emits another light color. A light-emitting device according to one embodiment of the present invention can be a light-emitting device that is less susceptible to such skin problems.

[0139] Furthermore, a light-emitting device having an organic compound represented by the following general formula (Ge1) and an organic compound represented by the following general formula (Gh1) can be a light-emitting device that not only has a low driving voltage and high reliability, but also has little decrease in luminance in low luminance regions.

[0140] Alternatively, a display device using an organic compound represented by the above general formula (Ge1) and an organic compound represented by any of the following general formulas (Gh1) to (Gh6-2) as a common layer in a light-emitting device that emits different light colors can obtain good characteristics in any of the light-emitting devices that emit light colors, and can be a display device with good characteristics.

[0141] Alternatively, even in a semiconductor device in which an organic compound layer is processed by photolithography, the organic semiconductor device contains an organic compound represented by the following general formula (Ge1) and an organic compound represented by any of the following general formulas (Gh1) to (Gh6-2), and thus the semiconductor device can exhibit characteristics (particularly high reliability and low driving voltage) equivalent to or better than those of an organic semiconductor device manufactured without breaking a vacuum atmosphere, thereby providing a semiconductor device with good characteristics. Furthermore, although an increase in driving voltage is a major problem in semiconductor devices in which an organic compound layer is processed by photolithography, the increase can be kept small in the semiconductor device of one embodiment of the present invention.

[0142] This embodiment mode can be used in any combination with other embodiments.

[0143] Embodiment 2 In this embodiment, a light-emitting device that is an organic semiconductor according to one embodiment of the present invention will be described in detail. FIG. 1A illustrates a light-emitting device according to one embodiment of the present invention. The light-emitting device according to one embodiment of the present invention includes an organic compound layer 103 between a first electrode 101 formed over an insulating layer 1000 and a second electrode 102 facing the first electrode. The organic compound layer 103 includes at least a light-emitting layer 113 and may further include other functional layers. FIG. 1A shows an example in which the device includes a hole injection layer 111, a hole transport layer 112, and an electron transport layer 114 (and an electron injection layer 115), but the device may also include an exciton blocking layer, a charge generating layer, or the like. Note that, in the hole transport layer 112, a layer that is in contact with the light-emitting layer 113 may be particularly referred to as an electron blocking layer, and in the electron transport layer 114, a layer that is in contact with the light-emitting layer may be particularly referred to as a hole blocking layer. In this embodiment, a case in which the first electrode 101 functions as an anode and the second electrode 102 functions as a cathode will be described as an example, but the reverse may also be true.

[0144] As described in Embodiment 1, it is preferable that the organic compound represented by the general formula (Ge1) and the organic compound represented by any of the general formulas (Gh1) to (Gh6-2) are both contained in the organic compound layer 103.

[0145] The organic compound represented by the general formula (Ge1) is an organic compound having electron transport properties, and therefore, it is preferably contained in one or more layers of the organic compound layer 103, the light-emitting layer 113, and the layer contained in the electron transport region between the light-emitting layer 113 and the second electrode 102.

[0146] The organic compound represented by the general formula (Ge1) is preferably contained in the electron transport layer 114 because of its excellent electron transporting properties, and more preferably contained in the hole blocking layer in contact with the light-emitting layer 113 because of its high resistance to holes.

[0147] Furthermore, when the organic compound represented by the general formula (Ge1) is contained in the light-emitting layer 113, it is preferably used as a host material for dispersing a light-emitting substance. In this case, it is preferable that the light-emitting layer 113 further contains a substance having a hole-transporting property, because this enables adjustment of the carrier balance.

[0148] Furthermore, since the organic compound represented by any of the above general formulas (Gh1) to (Gh6-2) is an organic compound having hole-transport properties, it is preferable that the organic compound be contained in one or more layers of the organic compound layer 103, the light-emitting layer 113, and the layer contained in the hole-transport region between the light-emitting layer 113 and the first electrode 101.

[0149] The organic compounds represented by any of the above general formulas (Gh1) to (Gh6-2) are preferably contained in the hole transport layer 112 because they have excellent hole transport properties, thereby enabling a light-emitting device with low driving voltage to be obtained; and are more preferably contained in the electron blocking layer in contact with the light-emitting layer 113 because they have high resistance to holes, thereby enabling a light-emitting device with high reliability to be obtained.

[0150] Furthermore, when the organic compound represented by any one of the above general formulas (Gh1) to (Gh6-2) is contained in the light-emitting layer 113, it is preferably used as a host material for dispersing a light-emitting substance. In this case, it is preferable that the light-emitting layer 113 further contains a substance having an electron-transporting property, because this enables adjustment of the carrier balance.

[0151] The anode is preferably formed using a metal, alloy, conductive compound, or mixture thereof having a large work function (specifically, 4.0 eV or more). Specific examples include indium oxide-tin oxide (ITO), indium oxide-tin oxide containing silicon or silicon oxide (ITSO), indium oxide-zinc oxide, and indium oxide containing tungsten oxide and zinc oxide (IWZO). These conductive metal oxide films are usually formed by sputtering, but may also be formed by applying a sol-gel method. As an example of a fabrication method, indium oxide-zinc oxide can be formed by sputtering using a target in which 1 to 20 wt % of zinc oxide is added to indium oxide. Indium oxide containing tungsten oxide and zinc oxide (IWZO) can also be formed by sputtering using a target containing 0.5 to 5 wt % tungsten oxide and 0.1 to 1 wt % zinc oxide relative to indium oxide. Other materials that can be used for the anode include, for example, gold (Au), platinum (Pt), nickel (Ni), tungsten (W), chromium (Cr), molybdenum (Mo), iron (Fe), cobalt (Co), copper (Cu), palladium (Pd), titanium (Ti), aluminum (Al), or nitrides of metal materials (e.g., titanium nitride). A layer formed by stacking these materials can also be used as the anode. For example, a film formed by stacking Al, Ti, and ITSO on Ti in this order is preferred because it has good reflectivity, is highly efficient, and enables high resolution of several thousand ppi. Alternatively, graphene can be used as the anode material. In addition, by using a composite material capable of forming the hole injection layer 111 described later as a layer in contact with the anode (typically, a hole injection layer), it becomes possible to select an electrode material regardless of the work function.

[0152] The hole injection layer 111 is provided in contact with the anode and has a function of facilitating injection of holes into the organic compound layer 103. The hole injection layer 111 is made of phthalocyanine (abbreviation: H ２The organic EL element can be formed from a phthalocyanine compound or complex compound such as copper phthalocyanine (abbreviated as CuPc), 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviated as DPAB) or 4,4'-bis(N-{4-[N'-(3-methylphenyl)-N'-phenylamino]phenyl}-N-phenylamino)biphenyl (abbreviated as DNTPD), or a polymer such as poly(3,4-ethylenedioxythiophene) / polystyrene sulfonic acid (abbreviated as PEDOT / PSS).

[0153] The hole-injection layer 111 may be formed using a substance having electron acceptor properties. Examples of the substance having acceptor properties include organic compounds having an electron-withdrawing group (such as a halogen group or a cyano group), such as 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F4-TCNQ), chloranil, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (abbreviation: HAT-CN), 1,3,4,5,7,8-hexafluorotetracyano-naphthoquinodimethane (abbreviation: F6-TCCNNQ), and 2-(7-dicyanomethylene-1,3,4,5,6,8,9,10-octafluoro-7H-pyren-2-ylidene)malononitrile. In particular, compounds in which an electron-withdrawing group is bonded to a fused aromatic ring having a plurality of heteroatoms, such as HAT-CN, are thermally stable and preferred. Also, [3]radialene derivatives having an electron-withdrawing group (especially a halogen group such as a fluoro group, a cyano group, etc.) are preferred because they have very high electron-accepting properties, and specific examples thereof include α,α',α''-1,2,3-cyclopropanetriylidenetris[4-cyano-2,3,5,6-tetrafluorobenzeneacetonitrile], α,α',α''-1,2,3-cyclopropanetriylidenetris[2,6-dichloro-3,5-difluoro-4-(trifluoromethyl)benzeneacetonitrile], and α,α',α''-1,2,3-cyclopropanetriylidenetris[2,3,4,5,6-pentafluorobenzeneacetonitrile]. As the substance having acceptor properties, in addition to the organic compounds described above, transition metal oxides such as molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, and manganese oxide can be used. ２The hole injection layer 111 can also be formed from a phthalocyanine compound or complex compound such as copper phthalocyanine (abbreviated as CuPc), aromatic amine compounds such as 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviated as DPAB) or 4,4'-bis(N-{4-[N'-(3-methylphenyl)-N'-phenylamino]phenyl}-N-phenylamino)biphenyl (abbreviated as DNTPD), or a polymer such as poly(3,4-ethylenedioxythiophene) / polystyrene sulfonic acid (abbreviated as PEDOT / PSS). A substance having acceptor properties can extract electrons from an adjacent hole transport layer (or hole transport material) when an electric field is applied.

[0154] The hole-injection layer 111 is preferably formed using a composite material containing the above-described material having an acceptor property and a substance having a hole-transport property.

[0155] As a substance having a hole transport property used in the composite material, various organic compounds such as aromatic amine compounds, heteroaromatic compounds, aromatic hydrocarbons, and polymer compounds (oligomers, dendrimers, polymers, etc.) can be used. −６ cm ２ / Vs or more. The substance having hole transport properties used in the composite material is preferably a compound having a fused aromatic hydrocarbon ring or a π-electron-rich heteroaromatic ring. As the fused aromatic hydrocarbon ring, an anthracene ring, a naphthalene ring, or the like is preferable. As the π-electron-rich heteroaromatic ring, a fused aromatic ring containing at least one of a pyrrole skeleton, a furan skeleton, and a thiophene skeleton in the ring is preferable, and specifically, a carbazole ring, a dibenzothiophene ring, or a ring in which an aromatic ring or a heteroaromatic ring is further fused to the above ring is preferable.

[0156] Such a substance having hole-transporting properties preferably has a carbazole skeleton, a dibenzofuran skeleton, a dibenzothiophene skeleton, or an anthracene skeleton. In particular, the substance may be an aromatic amine having a substituent containing a dibenzofuran ring or a dibenzothiophene ring, an aromatic monoamine having a naphthalene ring, or an aromatic monoamine in which a 9-fluorenyl group is bonded to the nitrogen of the amine via an arylene group. It is preferable that the substance having hole-transporting properties be a substance having an N,N-bis(4-biphenyl)amino group, since this allows the manufacture of a light-emitting device with a long lifetime.

[0157] Specific examples of the substance having the hole transport property as described above include N-(4-biphenyl)-6,N-diphenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BnfABP), N,N-bis(4-biphenyl)-6-phenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BBABnf), 4,4′-bis(6-phenylbenzo[b]naphtho[1,2-d]furan-8-yl)-4″-phenyltriphenylamine (abbreviation: BnfBB1BP), N,N-bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-8-yl, and N,N-bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-8-yl. [b]naphtho[1,2-d]furan-6-amine (abbreviation: BBABnf(6)), N,N-bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BBABnf(8)), N,N-bis(4-biphenyl)benzo[b]naphtho[2,3-d]furan-4-amine (abbreviation: BBABnf(II)(4)), N,N-bis[4-(dibenzofuran-4-yl)phenyl]-4-amino-p-terphenyl (abbreviation: DBfBB1TP), N-[4-(dibenzothiophen-4-yl)phenyl]- N-phenyl-4-biphenylamine (abbreviation: ThBA1BP), 4-(2-naphthyl)-4',4''-diphenyltriphenylamine (abbreviation: BBAβNB), 4-[4-(2-naphthyl)phenyl]-4',4''-diphenyltriphenylamine (abbreviation: BBAβNBi), 4,4'-diphenyl-4''-(6;1'-binaphthyl-2-yl)triphenylamine (abbreviation: BBAαNβNB), 4,4'-diphenyl-4''-(7;1'-binaphthyl-2-yl)triphenylamine (abbreviation: BBAαNβN B-03), 4,4'-diphenyl-4''-(7-phenyl)naphthyl-2-yltriphenylamine (abbreviation: BBAPβNB-03), 4,4'-diphenyl-4''-(6;2'-binaphthyl-2-yl)triphenylamine (abbreviation: BBA(βN2)B), 4,4'-diphenyl-4''-(7;2'-binaphthyl-2-yl)triphenylamine (abbreviation: BBA(βN2)B-03), 4,4'-diphenyl-4''-(4;2'-binaphthyl-1-yl)triphenylamine (abbreviation: BBAβNαNB), 4,4'-Diphenyl-4''-(5;2'-binaphthyl-1-yl)triphenylamine (abbreviation: BBAβNαNB-02), 4-(4-biphenylyl)-4'-(2-naphthyl)-4''-phenyltriphenylamine (abbreviation: TPBiAβNB), 4-(3-biphenylyl)-4'-[4-(2-naphthyl)phenyl]-4''-phenyltriphenylamine (abbreviation: mTPBiAβNBi), 4-(4-biphenylyl)-4'-[4-(2-naphthyl)phenyl] [4'-(3-phenyl-9H-carbazol-9-yl)biphenyl-4''-[ ... N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-N-[4-(1-naphthyl)phenyl]-9,9′-spirobi[9H-fluorene]-2-amine (abbreviation: PCBNBSF), N,N- Bis(biphenyl-4-yl)-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: BBASF), N,N-bis(biphenyl-4-yl)-9,9'-spirobi[9H-fluorene]-4-amine (abbreviation: BBASF(4)), N-(biphenyl-2-yl)-N-(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi[9H-fluorene]-4-amine (abbreviation: oFBiSF), N-(biphenyl-4-yl)-N-(9,9-dimethyl-9H-fluoren-2-yl)dibenzofuran-4-amine (abbreviation: FrBiF), N-[4-(1-naphthyl)phenyl]-N-[3-(6-phenyldibenzofuran-4-yl)phenyl]-1-naphthylamine (abbreviation: mPDBfBNBN), 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), 4-phenyl-3'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: mBPAFLP), 4-phenyl-4' -[4-(9-phenylfluoren-9-yl)phenyl]triphenylamine (abbreviation: BPAFLBi), 4-phenyl-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBA1BP), 4,4'-diphenyl-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBANB), 4,4'- Di(1-naphthyl)-4"-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBNBB), N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: PCBASF), N-(biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-dimethyl-9H-fluorene-2-amine (abbreviation: PCBBiF), N,N-bis( 9,9-dimethyl-9H-fluoren-2-yl)-9,9′-spirobi-9H-fluoren-4-amine, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9′-spirobi-9H-fluoren-3-amine, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9′-spirobi-9H-fluoren-2-amine, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9′-spirobi-9H-fluoren-1-amine, etc.

[0158] Other aromatic amine compounds that can be used as the substance having hole-transporting properties include N,N'-di(p-tolyl)-N,N'-diphenyl-p-phenylenediamine (abbreviation: DTDPPA), 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB), 4,4'-bis(N-{4-[N'-(3-methylphenyl)-N'-phenylamino]phenyl}-N-phenylamino)biphenyl (abbreviation: DNTPD), and 1,3,5-tris[N-(4-diphenylaminophenyl)-N-phenylamino]benzene (abbreviation: DPA3B).

[0159] Note that as a substance having a hole-transporting property in the composite material, an organic compound represented by any of the general formulas (Gh1) to (Gh6-2) described in Embodiment 1 can also be suitably used.

[0160] By forming the hole injection layer 111, the hole injection property becomes good, and a light emitting device with a low driving voltage can be obtained.

[0161] Among substances having acceptor properties, organic compounds having acceptor properties are easy to use because they can be easily vapor-deposited and formed into a film.

[0162] The hole transport layer 112 is formed by including a substance having a hole transport property. −６ cm ２ It is preferable that the material has a hole mobility of 1.0 V or more.

[0163] Examples of the substance having a hole-transporting property include 4,4′-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB), N,N′-diphenyl-N,N′-bis(3-methylphenyl)-4,4′-diaminobiphenyl (abbreviation: TPD), N,N′-bis(9,9′-spirobi[9H-fluoren]-2-yl)-N,N′-diphenyl-4,4′-diaminobiphenyl (abbreviation: BSPB), 4-phenyl-4′-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), and 4-phenyl-3-methylphenyl-4,4′-diaminobiphenyl (abbreviation: 4,4′-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB). 4,4'-diphenyl-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBA1BP), 4,4'-diphenyl-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBANB), 4,4'-di(1-naphthyl)-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBA1BP), compounds having an aromatic amine skeleton such as 1,3-bis(N-carbazolyl)benzene (abbreviation: mCP), 4,4'-di( N-carbazolyl)biphenyl (abbreviation: CBP), 3,6-bis(3,5-diphenylphenyl)-9-phenylcarbazole (abbreviation: CzTP), 3,3'-bis(9-phenyl-9H-carbazole) (abbreviation: PCCP), 9,9'-bis(biphenyl-4-yl)-3,3'-bi-9H-carbazole (abbreviation: BisBPCz), 9,9'-bis(biphenyl-3-yl)-3,3'-bi-9H-carbazole (abbreviation: BismBPCz), 9-(biphenyl-3-yl)-9'-(biphenyl-4-yl)-9H,9'H-3,3'-bicarbazole (abbreviation: mBPCCBP), 9-(2-naphthyl)-9'-phenyl-9H,9'H-3,3'-bicarbazole (abbreviation: βNCCP), 9-(3-biphenyl)-9'-(2-naphthyl)-3,3'-bi-9H-carbazole (abbreviation: βNCCmBP), 9-(4-biphenyl)-9'-(2-naphthyl)-3,3'-bi-9H-carbazole (abbreviation: βNCCBP), 9,9'-di-2-naphthyl-3,3'-9H,9'H-bicarbazole (abbreviation: :BisβNCz), 9-(2-naphthyl)-9'-[1,1':4',1"-terphenyl]-3-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':3',1"-terphenyl]-3-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':3',1"-terphenyl]-5'-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':4',1"- terphenyl]-4-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':3',1"-terphenyl]-4-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-(triphenylen-2-yl)-3,3'-9H,9'H-bicarbazole, 9-phenyl-9'-(triphenylen-2-yl)-3,3'-9H,9'H-bicarbazole (abbreviation: PCCzTp), 9,9'-bis(triphenylene-2 compounds having a carbazole skeleton such as 9-(4-biphenyl)-9'-(triphenylen-2-yl)-3,3'-9H,9'H-bicarbazole, 9-(triphenylen-2-yl)-9'-[1,1':3',1"-terphenyl]-4-yl-3,3'-9H,9'H-bicarbazole, 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation: DBT3P-II), 2,Examples of suitable compounds include compounds having a thiophene skeleton, such as 8-diphenyl-4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene (abbreviation: DBTFLP-III) and 4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviation: DBTFLP-IV), and compounds having a furan skeleton, such as 4,4′,4″-(benzene-1,3,5-triyl)tri(dibenzofuran) (abbreviation: DBF3P-II) and 4-{3-[3-(9-phenyl-9H-fluoren-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: mmDBFFLBi-II). Among the compounds listed above, compounds having an aromatic amine skeleton and compounds having a carbazole skeleton are preferred because they have good reliability, high hole transport properties, and contribute to reducing driving voltage. In addition, the organic compounds listed as the substances having hole transport properties used in the composite material of the hole injection layer 111 can also be suitably used as materials for forming the hole transport layer 112.

[0164] Note that as a material for the hole-transport layer 112, an organic compound represented by any of the general formulas (Gh1) to (Gh6-2) described in Embodiment 1 can also be suitably used.

[0165] Furthermore, it is preferable that the organic compound represented by any one of the general formulas (Gh1) to (Gh6-2) described in Embodiment 1 is used for both the substance having hole-transport properties used in the composite material of the hole-injection layer 111 and the material constituting the hole-transport layer 112, because cost reduction by using the same material and reduction in driving voltage by facilitating injection of holes from the hole-injection layer 111 to the hole-transport layer 112 can be expected.

[0166] The luminescent center substance contained in the light-emitting layer 113 may be a fluorescent substance, a phosphorescent substance, a substance exhibiting thermally activated delayed fluorescence (TADF), or any other luminescent substance.

[0167] Examples of materials that can be used as the fluorescent substance in the light-emitting layer 113 include the following: In addition, fluorescent substances other than these can also be used.

[0168] 5,6-bis[4-(10-phenyl-9-anthryl)phenyl]-2,2'-bipyridine (abbreviation: PAP2BPy), 5,6-bis[4'-(10-phenyl-9-anthryl)biphenyl-4-yl]-2,2'-bipyridine (abbreviation: PAPP2BPy), N,N'-diphenyl-N,N'-bis[4-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6FLPAPrn), N,N'-bis(3-methylphenyl)-N,N'-bis[3-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine )phenyl]pyrene-1,6-diamine (abbreviation: 1,6mMemFLPAPrn), N,N'-bis[4-(9H-carbazol-9-yl)phenyl]-N,N'-diphenylstilbene-4,4'-diamine (abbreviation: YGA2S), 4-(9H-carbazol-9-yl)-4'-(10-phenyl-9-anthryl)triphenylamine (abbreviation: YGAPA), 4-(9H-carbazol-9-yl)-4'-(9,10-diphenyl-2-anthryl)triphenylamine (abbreviation: 2YGAPPA), N,9-diphenyl-N-[4-( 10-phenyl-9-anthryl)phenyl]-9H-carbazol-3-amine (abbreviation: PCAPA), perylene, 2,5,8,11-tetra-tert-butylperylene (abbreviation: TBP), 4-(10-phenyl-9-anthryl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBAPA), N,N''-(2-tert-butylanthracene-9,10-diyldi-4,1-phenylene)bis(N,N',N'-triphenyl-1,4-phenylenediamine) (abbreviation: DPABPA), N,9 -diphenyl-N-[4-(9,10-diphenyl-2-anthryl)phenyl]-9H-carbazol-3-amine (abbreviation: 2PAPPA), N-[4-(9,10-diphenyl-2-anthryl)phenyl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPPA), N,N,N',N',N'',N'',N''',N'''-octaphenyldibenzo[g,p]chrysene-2,7,10,15-tetraamine (abbreviation: DBC1), Coumarin 30, N-(9,10-diphenyl-2-anthryl)-N,9-Diphenyl-9H-carbazole-3-amine (abbreviation: 2PCAPA), N-[9,10-bis(biphenyl-2-yl)-2-anthryl]-N,9-diphenyl-9H-carbazole-3-amine (abbreviation: 2PCABPhA), N-(9,10-diphenyl-2-anthryl)-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPA), N-[9,10-bis(biphenyl-2-yl)-2-anthryl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPABPhA) , 9,10-bis(biphenyl-2-yl)-N-[4-(9H-carbazol-9-yl)phenyl]-N-phenylanthracen-2-amine (abbreviation: 2YGABPhA), N,N,9-triphenylanthracen-9-amine (abbreviation: DPhAPhA), Coumarin 545T, N,N'-diphenylquinacridone (abbreviation: DPQd), rubrene, 5,12-bis(biphenyl-4-yl)-6,11-diphenyltetracene (abbreviation: BPT), 2-(2-{2-[4-(dimethylamino)phenyl]ethenyl}-6-methyl-4H-pyra N,N,N',N'-tetrakis(4-methylphenyl)acenaphtho[1,2-a]fluoranthene-3,10-diamine (abbreviation: p-mPhTD), 2-{2-methyl-6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCM1), 2-{2-methyl-6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCM2), N,N,N',N'-tetrakis(4-methylphenyl)tetracene-5,11-diamine (abbreviation: p-mPhTD), 7,14-diphenyl-N,N,N',N'-tetrakis(4-methylphenyl)acenaphtho[1,2-a]fluoranthene-3,10-diamine (abbreviation: p-mPhTD), Name: p-mPhAFD), 2-{2-isopropyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCJTI), 2-{2-tert-butyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCJTB), 2-(2,6-bis{2-[4-(dimethylamino)phenyl]ethenyl}-4H-pyran-4-ylidene)propanedinitrile (abbreviation: BisDCM), 2-{2,6-bis[2-(8-methoxy-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: BisDCJ™), N,N'-diphenyl-N,N'-(1,6-pyren-diyl)bis[(6-phenylbenzo[b]naphthyl)benzo[b]naphthyl] ... 6,7-b']bisbenzofuran-3,10-diamine (abbreviation: 3,10PCA2Nbf(IV)-02), and 3,10-bis[N-(dibenzofuran-3-yl)-N-phenylamino]naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviation: 3,10FrA2Nbf(IV)-02). In particular, condensed aromatic diamine compounds, such as pyrene diamine compounds 1,6FLPAPrn, 1,6mMemFLPAPrn, and 1,6BnfAPrn-03, are preferred because they have high hole trapping properties and excellent luminous efficiency or reliability.

[0169] When a phosphorescent material is used as the light-emitting material in the light-emitting layer 113, examples of the phosphorescent material include the following materials.

[0170] Tris{2-[5-(2-methylphenyl)-4-(2,6-dimethylphenyl)-4H-1,2,4-triazol-3-yl-κN]phenyl-κC}iridium(III) (abbreviation: [Ir(mpptz-dmp) ３ ]), tris(5-methyl-3,4-diphenyl-4H-1,2,4-triazolato)iridium(III) (abbreviation: [Ir(Mptz) ３ ]), organometallic iridium complexes having a 4H-triazole skeleton such as tris[3-methyl-1-(2-methylphenyl)-5-phenyl-1H-1,2,4-triazolato]iridium(III) (abbreviation: [Ir(Mptz1-mp) ３]), tris(1-methyl-5-phenyl-3-propyl-1H-1,2,4-triazolato)iridium(III) (abbreviation: [Ir(Prptz1-Me) ３ organometallic iridium complexes having a 1H-triazole skeleton, such as fac-tris[1-(2,6-diisopropylphenyl)-2-phenyl-1H-imidazole]iridium(III) (abbreviation: [Ir(iPrpim) ３ ]), tris[3-(2,6-dimethylphenyl)-7-methylimidazo[1,2-f]phenanthridinato]iridium(III) (abbreviation: [Ir(dmpimpt-Me) ３ organometallic iridium complexes having an imidazole skeleton, such as tris(2-{1-[2,6-bis(1-methylethyl)phenyl]-1H-imidazol-2-yl-κN}-4-cyanophenyl-κC)iridium(III) (abbreviation: CNImIr), tris[(6-tert-butyl-3-phenyl-2H-imidazo[4,5-b]pyrazin-1-yl-κC)phenyl-κC]iridium(III) (abbreviation: [Ir(cb) ３ organometallic complexes having a benzimidazolidene skeleton, such as bis[2-(4',6'-difluorophenyl)pyridinato-N,C ２’ ]iridium(III) tetrakis(1-pyrazolyl)borate (abbreviation: FIr6), bis[2-(4',6'-difluorophenyl)pyridinato-N,C ２’ ]iridium(III) picolinate (abbreviation: FIrpic), bis{2-[3',5'-bis(trifluoromethyl)phenyl]pyridinato-N,C ２’} Iridium(III) picolinate (abbreviation: [Ir(CF ３ ppy) ２ (pic)]), bis[2-(4',6'-difluorophenyl)pyridinato-N,C ２’ ] Organometallic iridium complexes having a phenylpyridine derivative having an electron-withdrawing group as a ligand, such as iridium(III) acetylacetonate (abbreviation: FIracac), are compounds that exhibit blue phosphorescence and have an emission peak in the wavelength range of 450 nm to 520 nm.

[0171] Also, tris(4-methyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm) ３ ]), tris(4-t-butyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm) ３ ]), (acetylacetonato)bis(6-methyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm) ２ (acac)]), (acetylacetonato)bis(6-tert-butyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm) ２ (acac)]), (acetylacetonato)bis[6-(2-norbornyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: [Ir(nbppm) ２ (acac)]), (acetylacetonato)bis[5-methyl-6-(2-methylphenyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: [Ir(mpmppm) ２ (acac)]), (acetylacetonato)bis(4,6-diphenylpyrimidinato)iridium(III) (abbreviation: [Ir(dppm) ２ organometallic iridium complexes having a pyrimidine skeleton, such as (acetylacetonato)bis(3,5-dimethyl-2-phenylpyrazinato)iridium(III) (abbreviation: [Ir(mppr-Me) ２ (acac)]), (acetylacetonato)bis(5-isopropyl-3-methyl-2-phenylpyrazinato)iridium(III) (abbreviation: [Ir(mppr-iPr) ２ organometallic iridium complexes having a pyrazine skeleton, such as tris(2-phenylpyridinato-N,C(acac)]); ２’ ) Iridium(III) (abbreviation: [Ir(ppy) ３ ]), bis(2-phenylpyridinato-N,C ２’ ) Iridium(III) acetylacetonate (abbreviation: [Ir(ppy) ２ (acac)]), bis(benzo[h]quinolinato)iridium(III) acetylacetonate (abbreviation: [Ir(bzq)２ (acac)]), tris(benzo[h]quinolinato)iridium(III) (abbreviation: [Ir(bzq) ３ ]), tris(2-phenylquinolinato-N,C ２’ ) Iridium(III) (abbreviation: [Ir(pq) ３ ]), bis(2-phenylquinolinato-N,C ２’ ) iridium(III) acetylacetonate (abbreviation: [Ir(pq) ２ (acac)]), [2-d3-methyl-8-(2-pyridinyl-κN)benzofuro[2,3-b]pyridine-κC]bis[2-(5-d ３ [5-methyl-2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviation: Ir(5mppy-d ３ ) ２ (mbfpypy-d ３ )), {2-(methyl-d ３ )-8-[4-(1-methylethyl-1-d)-2-pyridinyl-κN]benzofuro[2,3-b]pyridin-7-yl-κC}bis{5-(methyl-d ３ )-2-[5-(methyl-d ３ )-2-pyridinyl-κN]phenyl-κC}iridium(III) (abbreviation: Ir(5mtpy-d6) ２ (mbfpypy-iPr-d ４ )), [2-d ３ -methyl-(2-pyridinyl-κN)benzofuro[2,3-b]pyridine-κC]bis[2-(2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviation: Ir(ppy) ２ (mbfpypy-d ３ )), [2-(4-methyl-5-phenyl-2-pyridinyl-κN)phenyl-κC]bis[2-(2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviation: Ir(ppy) ２ (mdppy)), [2-(4-d ３ -methyl-5-phenyl-2-pyridinyl-κN)phenyl-κC]bis[2-(5-d ３ [Ir(5mppy-d-methyl-2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviation: [Ir(5mppy-d-methyl-2-pyridinyl-κN)phenyl-κC]iridium(III) ３)2(mdppy-d ３ ) )]), [2-methyl-(2-pyridinyl-κN)benzofuro[2,3-b]pyridine-κC]bis[2-(2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviation: [Ir(ppy) ２ (mbfpypy)]), [2-(4-methyl-5-phenyl-2-pyridinyl-κN)phenyl-κC]bis[2-(2-pyridinyl-κN)phenyl-κC]iridium (abbreviation: [Ir(ppy) ２ In addition to organometallic iridium complexes having a pyridine skeleton, such as tris(acetylacetonato)(monophenanthroline)terbium(III) (abbreviation: [Tb(acac)]), ３ Examples of suitable iridium complexes include rare earth metal complexes such as iridium fluoride (Phen). These compounds mainly exhibit green phosphorescence, with emission peaks in the wavelength range of 500 nm to 600 nm. Organometallic iridium complexes having a pyrimidine skeleton are particularly preferred because they are remarkably excellent in reliability and luminous efficiency.

[0172] Also, (diisobutyrylmethanato)bis[4,6-bis(3-methylphenyl)pyrimidinato]iridium(III) (abbreviation: [Ir(5mdppm) ２ (dibm)]), bis[4,6-bis(3-methylphenyl)pyrimidinato](dipivaloylmethanato)iridium(III) (abbreviation: [Ir(5mdppm) ２ (dpm)]), bis[4,6-di(naphthalen-1-yl)pyrimidinato](dipivaloylmethanato)iridium(III) (abbreviation: [Ir(dpm) ２ organometallic iridium complexes having a pyrimidine skeleton, such as (acetylacetonato)bis(2,3,5-triphenylpyrazinato)iridium(III) (abbreviation: [Ir(tppr) ２ (acac)]), bis(2,3,5-triphenylpyrazinato)(dipivaloylmethanato)iridium(III) (abbreviation: [Ir(tppr) ２ (dpm)]), (acetylacetonato)bis[2,3-bis(4-fluorophenyl)quinoxalinato]iridium(III) (abbreviation: [Ir(Fdpq)２ organometallic iridium complexes having a pyrazine skeleton, such as tris(1-phenylisoquinolinato-N,C(acac)]); ２’ ) Iridium(III) (abbreviation: [Ir(piq) ３ ]), bis(1-phenylisoquinolinato-N,C ２’ ) iridium(III) acetylacetonate (abbreviation: [Ir(piq) ２ (acac)]), (3,7-diethyl-4,6-nonanedionato-κO4,κO6)bis[2,4-dimethyl-6-[7-(1-methylethyl)-1-isoquinolinyl-κN]phenyl-κC]iridium(III), (3,7-diethyl-4,6-nonanedionato-κO4,κO6)bis[2,4-dimethyl-6-[5-(1-methylethyl)-2-quinolinyl-κN]phenyl-κC]iridium(III). In addition to organometallic iridium complexes having a pyridine skeleton such as [ru-κC]iridium(III), platinum complexes such as 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrinplatinum(II) (abbreviation: PtOEP), tris(1,3-diphenyl-1,3-propanedionato)(monophenanthroline)europium(III) (abbreviation: [Eu(DBM) ３ (Phen)]), tris[1-(2-thenoyl)-3,3,3-trifluoroacetonato](monophenanthroline)europium(III) (abbreviation: [Eu(TTA) ３ These compounds exhibit red phosphorescence and have an emission peak in the wavelength range of 600 nm to 700 nm. Organometallic iridium complexes having a pyrazine skeleton can emit red light with good chromaticity.

[0173] In addition to the phosphorescent compounds described above, known phosphorescent compounds may be selected and used.

[0174] Examples of TADF materials that can be used include fullerene and its derivatives, acridine and its derivatives, and eosin derivatives. Other examples include metal-containing porphyrins containing magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), indium (In), or palladium (Pd). Examples of metal-containing porphyrins include protoporphyrin-tin fluoride complexes (SnF) represented by the following structural formula: ２ (Proto IX)), mesoporphyrin-tin fluoride complex (SnF ２ (Meso IX)), hematoporphyrin-tin fluoride complex (SnF ２ (Hemato IX)), coproporphyrin tetramethyl ester-tin fluoride complex (SnF ２ (Copro III-4Me)), octaethylporphyrin-tin fluoride complex (SnF ２ (OEP)), etioporphyrin-tin fluoride complex (SnF ２ (Etio I)), octaethylporphyrin-platinum chloride complex (PtCl ２ OEP) and the like.

[0175]

[0176] Further, 2-(biphenyl-4-yl)-4,6-bis(12-phenylindolo[2,3-a]carbazol-11-yl)-1,3,5-triazine (abbreviation: PIC-TRZ), 9-(4,6-diphenyl-1,3,5-triazin-2-yl)-9′-phenyl-9H,9′H-3,3′-bicarbazole (abbreviation: PCCzTzn), 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 2-[4-(10H-phenoxazin-10-yl)phenyl]-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), and Heterocyclic compounds having one or both of a π-electron rich heteroaromatic ring and a π-electron deficient heteroaromatic ring, such as 3-[4-(5-phenyl-5,10-dihydrophenazin-10-yl)phenyl]-4,5-diphenyl-1,2,4-triazole (abbreviation: PPZ-3TPT), 3-(9,9-dimethyl-9H-acridin-10-yl)-9H-xanthen-9-one (abbreviation: ACRXTN), bis[4-(9,9-dimethyl-9,10-dihydroacridine)phenyl]sulfone (abbreviation: DMAC-DPS), and 10-phenyl-10H,10′H-spiro[acridine-9,9′-anthracene]-10′-one (abbreviation: ACRSA), can also be used. The heterocyclic compound has a π-electron-rich heteroaromatic ring and a π-electron-deficient heteroaromatic ring, and therefore has high electron transport and hole transport properties, and is therefore preferred. Among the skeletons having a π-electron-deficient heteroaromatic ring, pyridine skeleton, diazine skeleton (pyrimidine skeleton, pyrazine skeleton, pyridazine skeleton), and triazine skeleton are preferred because they are stable and reliable. In particular, benzofuropyrimidine skeleton, benzothienopyrimidine skeleton, benzofuropyrazine skeleton, and benzothienopyrazine skeleton are preferred because they have high acceptor properties and good reliability. Furthermore, among the skeletons having a π-electron-rich heteroaromatic ring, acridine skeleton, phenoxazine skeleton, phenothiazine skeleton, furan skeleton, thiophene skeleton, and pyrrole skeleton are preferred because they are stable and reliable.The furan skeleton is preferably a dibenzofuran skeleton, and the thiophene skeleton is preferably a dibenzothiophene skeleton. Furthermore, the pyrrole skeleton is particularly preferably an indole skeleton, a carbazole skeleton, an indolocarbazole skeleton, a bicarbazole skeleton, or a 3-(9-phenyl-9H-carbazole-3-yl)-9H-carbazole skeleton. Furthermore, in a substance in which a π-electron-rich heteroaromatic ring and a π-electron-deficient heteroaromatic ring are directly bonded, the electron-donating property of the π-electron-rich heteroaromatic ring and the electron-accepting property of the π-electron-deficient heteroaromatic ring are both enhanced, resulting in S. １ Level and T １ This is particularly preferred because the energy difference between the levels is small, allowing thermally activated delayed fluorescence to be obtained efficiently. Instead of the π-electron-deficient heteroaromatic ring, an aromatic ring bonded to an electron-withdrawing group such as a cyano group may be used. Furthermore, as the π-electron-rich skeleton, an aromatic amine skeleton, a phenazine skeleton, or the like can be used. Furthermore, as the π-electron-deficient skeleton, a xanthene skeleton, a thioxanthene dioxide skeleton, an oxadiazole skeleton, a triazole skeleton, an imidazole skeleton, an anthraquinone skeleton, a boron-containing skeleton such as phenylborane or boranthrene, an aromatic ring having a nitrile group or a cyano group such as benzonitrile or cyanobenzene, a heteroaromatic ring, a carbonyl skeleton such as benzophenone, a phosphine oxide skeleton, a sulfone skeleton, or the like can be used. In this way, a π-electron-deficient skeleton and a π-electron-rich skeleton can be used in place of at least one of the π-electron-deficient heteroaromatic ring and the π-electron-rich heteroaromatic ring.

[0177]

[0178] The TADF material is S １ Level and T １ This material has a small difference in energy level between triplet and singlet excitations, and has the ability to convert energy from triplet excitation to singlet excitation through reverse intersystem crossing. Therefore, triplet excitation energy can be upconverted to singlet excitation energy (reverse intersystem crossing) with a small amount of thermal energy, allowing for efficient generation of a singlet excited state. In addition, triplet excitation energy can be converted into luminescence.

[0179] In addition, an excited complex (also called an exciplex) that forms an excited state with two kinds of substances is S １ Level and T １ The difference between the triplet excitation energy and the singlet excitation energy is extremely small, and the TADF material functions as a TADF material that can convert triplet excitation energy into singlet excitation energy.

[0180] In addition, T １ The phosphorescence spectrum observed at low temperatures (for example, 77 K to 10 K) can be used as an index of the level. For the TADF material, a tangent line is drawn at the base of the fluorescence spectrum on the short wavelength side, and the energy of the wavelength of the extrapolated line is expressed as S １ The level is set as the tangent line at the base of the phosphorescence spectrum on the short wavelength side, and the energy of the wavelength of the extrapolated line is T １ When the level is reached, the S １ and T １ The difference is preferably 0.3 eV or less, and more preferably 0.2 eV or less.

[0181] In addition, when a TADF material is used as a light-emitting material, the S １ The level is S of the TADF material. １ It is preferable that the T level of the host material is higher than that of the １ The level is the T １ It is preferable that the level is higher.

[0182] As a host material for the light-emitting layer 113, various carrier transporting materials such as a substance having an electron transporting property and / or a substance having a hole transporting property, or the above-mentioned TADF material can be used.

[0183] An organic compound having an amine skeleton or a π-electron-rich heteroaromatic ring skeleton is preferable as a substance having a hole-transporting property that can be used as a host material for the light-emitting layer 113. The π-electron-rich heteroaromatic ring is preferably a fused aromatic ring containing at least one of an acridine skeleton, a phenoxazine skeleton, a phenothiazine skeleton, a furan skeleton, a thiophene skeleton, and a pyrrole skeleton in the ring, and specifically, a carbazole ring, a dibenzothiophene ring, or a ring in which an aromatic ring or a heteroaromatic ring is further fused to one of these rings is preferable.

[0184] The hole-transporting substance preferably has a carbazole skeleton, a dibenzofuran skeleton, a dibenzothiophene skeleton, or an anthracene skeleton. In particular, the hole-transporting substance may be an aromatic amine having a substituent containing a dibenzofuran ring or a dibenzothiophene ring, an aromatic monoamine having a naphthalene ring, or an aromatic monoamine in which a 9-fluorenyl group is bonded to the nitrogen of the amine via an arylene group. It is preferable that the hole-transporting substance be an organic compound having an N,N-bis(4-biphenyl)amino group, since this allows the fabrication of a light-emitting device with a long lifetime.

[0185] Examples of such organic compounds include 4,4′-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB), N,N′-diphenyl-N,N′-bis(3-methylphenyl)-4,4′-diaminobiphenyl (abbreviation: TPD), N,N′-bis(9,9′-spirobi[9H-fluoren]-2-yl)-N,N′-diphenyl-4,4′-diaminobiphenyl (abbreviation: BSPB), and 4-phenyl-4′-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BSPB). : BPAFLP), 4-phenyl-3'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: mBPAFLP), 4-phenyl-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBA1BP), 4,4'-diphenyl-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: aromatic compounds such as 4,4'-di(1-naphthyl)-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBANB), 4,4'-di(1-naphthyl)-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBNBB), 9,9-dimethyl-N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]fluoren-2-amine (abbreviation: PCBAF), and N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: PCBASF) compounds having an aromatic amine skeleton, compounds having a carbazole skeleton such as 1,3-bis(N-carbazolyl)benzene (abbreviation: mCP), 4,4'-di(N-carbazolyl)biphenyl (abbreviation: CBP), 3,6-bis(3,5-diphenylphenyl)-9-phenylcarbazole (abbreviation: CzTP), and 3,3'-bis(9-phenyl-9H-carbazole) (abbreviation: PCCP); 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation: DBT3P-II);Examples of suitable compounds include compounds having a thiophene skeleton, such as 8-diphenyl-4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene (abbreviation: DBTFLP-III) and 4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviation: DBTFLP-IV), and compounds having a furan skeleton, such as 4,4′,4″-(benzene-1,3,5-triyl)tri(dibenzofuran) (abbreviation: DBF3P-II) and 4-{3-[3-(9-phenyl-9H-fluoren-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: mmDBFFLBi-II). Among the compounds listed above, compounds having an aromatic amine skeleton or a carbazole skeleton are preferred because they have good reliability, high hole transport properties, and contribute to reducing driving voltage. In addition, the organic compounds listed as examples of the substance having hole transport properties in the hole transport layer can also be used. Note that the organic compounds represented by any of the general formulas (Gh1) to (Gh6-2) shown in Embodiment 1 can also be suitably used.

[0186] The substance having an electron transporting property that can be used as a host material of the light-emitting layer 113 is a substance having an electron mobility of 1×10 or less at a square root of an electric field strength [V / cm] of 600. −７ cm ２ / Vs or more, preferably 1×10 −６ cm ２ A substance having an electron mobility of 1 / Vs or more is preferred. Note that other substances can be used as long as they have a higher electron transporting property than a hole transporting property.

[0187] An example of a substance having electron transport properties is bis(10-hydroxybenzo[h]quinolinato)beryllium(II) (abbreviation: BeBq ２Preferred are metal complexes such as bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum(III) (abbreviation: BAlq), bis(8-quinolinolato)zinc(II) (abbreviation: Znq), bis[2-(2-benzoxazolyl)phenolato]zinc(II) (abbreviation: ZnPBO), and bis[2-(2-benzothiazolyl)phenolato]zinc(II) (abbreviation: ZnBTZ), as well as organic compounds having a π-electron-deficient heteroaromatic ring. Examples of organic compounds having a π-electron-deficient heteroaromatic ring skeleton include organic compounds having a heteroaromatic ring with a polyazole skeleton, organic compounds having a heteroaromatic ring with a pyridine skeleton, organic compounds having a heteroaromatic ring with a diazine skeleton, and organic compounds having a heteroaromatic ring with a triazine skeleton.

[0188] Among these, organic compounds containing a heteroaromatic ring having a diazine skeleton (pyrimidine skeleton, pyrazine skeleton, pyridazine skeleton), organic compounds containing a heteroaromatic ring having a pyridine skeleton, and organic compounds containing a heteroaromatic ring having a triazine skeleton are preferred because of their high reliability. In particular, organic compounds containing a heteroaromatic ring having a diazine (pyrimidine or pyrazine) skeleton and organic compounds containing a heteroaromatic ring having a triazine skeleton have high electron transport properties and contribute to reducing driving voltage. In addition, benzofuropyrimidine skeletons, benzothienopyrimidine skeletons, benzofuropyrazine skeletons, and benzothienopyrazine skeletons are preferred because of their high acceptor properties and high reliability.

[0189] Examples of organic compounds having a π-electron-deficient heteroaromatic ring skeleton include 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD), 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (abbreviation: TAZ), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene (abbreviation: OXD-7), 9-[4-(5-phenyl-1,3,4-oxadiazole- organic compounds having an azole skeleton, such as 2-[3-(dibenzothiophen-4-yl)phenyl]-9H-carbazole (abbreviation: CO11), 2,2′,2″-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzimidazole) (abbreviation: TPBI), 2-[3-(dibenzothiophen-4-yl)phenyl]-1-phenyl-1H-benzimidazole (abbreviation: mDBTBIm-II), and 4,4′-bis(5-methylbenzoxazol-2-yl)stilbene (abbreviation: BzOs); )phenyl]pyridine (abbreviation: 35DCzPPy), 1,3,5-tri[3-(3-pyridyl)phenyl]benzene (abbreviation: TmPyPB), bathophenanthroline (abbreviation: Bphen), bathocuproine (abbreviation: BCP), 2,9-di(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBphen), 2,2'-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline) (abbreviation: mPPhen2P), 2-[3-(2-triphenylenyl)phenyl]-1,10 organic compounds containing a heteroaromatic ring having a pyridine skeleton, such as 2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[3-(3'-dibenzothiophen-4-yl)biphenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II), 2-[3'-(9H-carbazol-9-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mCzBPDBq), 2-[4'-(9-phenyl-9H-carbazol-3-yl)-3,1'-biphenyl-1-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mpPCBPDBq), 2-[4-(3,6-diphenyl-9H- carbazol-9-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2CzPDBq-III), 7-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 7mDBTPDBq-II), and 6-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 6mDBTPDBq-II), 9-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9mDBtBPNfpr), 9-[ 3'-(dibenzothiophen-4-yl)biphenyl-4-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9pmDBtBPNfpr), 4,6-bis[3-(phenanthrene-9-yl)phenyl]pyrimidine (abbreviation: 4,6mPnP2Pm), 4,6-bis[3-(4-dibenzothienyl)phenyl]pyrimidine (abbreviation: 4,6mDBTP2Pm-II), 4,6-bis[3-(9H-carbazol-9-yl)phenyl]pyrimidine (abbreviation: 4,6mCzP2Pm), 9,9'-[pyrimidine-4,6-diylbis(biphenyl)] phenyl-3,3′-diyl)]bis(9H-carbazole) (abbreviation: 4,6mCzBP2Pm), 8-(biphenyl-4-yl)-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofuro[3,2-d]pyrimidine (abbreviation: 8BP-4mDBtPBfpm), 3,8-bis[3-(dibenzothiophen-4-yl)phenyl]benzofuro[2,3-b]pyrazine (abbreviation: 3,8mDBtP2Bfpr), 4,8-bis[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofuro[3,2-d]pyrimidine (abbreviation: 4,8mDBtP2Bfpm), 8-[3'-(dibenzothiophen-4-yl)(biphenyl-3-yl)]naphtho[1',2':4,5]furo[3,2-d]pyrimidine (abbreviation: 8mDBtBPNfpm), 8-[(2,2'-binaphthalen)-6-yl]-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofuro[3,2-d]pyrimidine (abbreviation: 8(βN2)-4mDBtPBfpm), 2,2'-(pyridine-2,6-diyl)bis(4-phenylbenzo[h]quinazoline) (abbreviation: 2,6(P-Bqn)2Py ), 2,2'-(pyridine-2,6-diyl)bis{4-[4-(2-naphthyl)phenyl]-6-phenylpyrimidine} (abbreviation: 2,6(NP-PPm)2Py), 6-(biphenyl-3-yl)-4-[3,5-bis(9H-carbazol-9-yl)phenyl]-2-phenylpyrimidine (abbreviation: 6mBP-4Cz2PPm), 2,6-bis(4-naphthalen-1-ylphenyl)-4-[4-(3-pyridyl)phenyl]pyrimidine (abbreviation: 2,4NP-6PyPPm), 4-[3,5-bis(9H-carbazol-9-yl)phenyl organic compounds having a diazine skeleton such as 2-(biphenyl-4-yl)-4-phenyl-6-(9,9'-spirobi[9H-fluoren]-2-yl)-pyrimidine (abbreviation: 6BP-4Cz2PPm), 7-[4-(9-phenyl-9H-carbazol-2-yl)quinazolin-2-yl]-7H-dibenzo[c,g]carbazole (abbreviation: PC-cgDBCzQz), 2-(biphenyl-4-yl)-4-phenyl-6-(9,9'-spirobi[9H-fluoren]-2-yl)-1,3,5-triazine (abbreviation: BP-SFTzn), 2-{3-[3-(benzo[b]naphtho[1,2-d]furan- 8-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mBnfBPTzn), 2-{3-[3-(benzo[b]naphtho[1,2-d]furan-6-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mBnfBPTzn-02), 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 9-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-9'-phenyl-2,3'-bi-9H-carbazole (abbreviation: mPCCzPTzn-02), 2-[3'-(9,9-dimethyl-9H-fluoren-2-yl)biphenyl-3-yl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mFBPTzn), 5-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-7,7-dimethyl-5H,7H-indeno[2,1-b]carbazole carbazole (abbreviation: mINc(II)PTzn), 2-{3-[3-(dibenzothiophen-4-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mDBtBPTzn), 2,4,6-tris[3′-(pyridin-3-yl)biphenyl-3-yl]-1,3,5-triazine (abbreviation: TmPPPyTz), 2-[3-(2,6-dimethyl-3-pyridinyl)-5-(9-phenanthrenyl)phenyl]-4,6- Diphenyl-1,3,5-triazine (abbreviation: mPn-mDMePyPTzn), 11-(4-biphenyl-4-yl-6-phenyl-1,3,5-triazin-2-yl)-11,12-dihydro-12-phenyl-indolo[2,3-a]carbazole (abbreviation: BP-Icz(II)Tzn), 2-[3′-(triphenylen-2-yl)biphenyl-3-yl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mTpBPTzn), 3- Examples of suitable organic compounds include those containing a heteroaromatic ring with a triazine skeleton, such as [9-(4,6-diphenyl-1,3,5-triazin-2-yl)-2-dibenzofuranyl]-9-phenyl-9H-carbazole (abbreviation: PCDBfTzn) and 2-(biphenyl-3-yl)-4-phenyl-6-{8-[(1,1':4',1''-terphenyl)-4-yl]-1-dibenzofuranyl}-1,3,5-triazine (abbreviation: mBP-TPDBfTzn). Organic compounds containing a heteroaromatic ring with a diazine skeleton, organic compounds containing a heteroaromatic ring with a pyridine skeleton, and organic compounds containing a heteroaromatic ring with a triazine skeleton are preferred due to their high reliability. In particular, organic compounds containing a heteroaromatic ring with a diazine (pyrimidine or pyrazine) skeleton and organic compounds containing a heteroaromatic ring with a triazine skeleton have high electron transport properties and contribute to reduced driving voltage.

[0190] Note that as a substance having an electron-transporting property which can be used as a host material of the light-emitting layer 113, the organic compound represented by the general formula (Ge1) described in Embodiment 1 is preferably used.

[0191] The TADF materials that can be used as the host material can be the same as those listed above. When a TADF material is used as a host material, triplet excitation energy generated in the TADF material is converted into singlet excitation energy by reverse intersystem crossing, and the energy is further transferred to a light-emitting substance, thereby improving the luminous efficiency of the light-emitting device. In this case, the TADF material functions as an energy donor, and the light-emitting substance functions as an energy acceptor.

[0192] This is effective when the luminescent material is a fluorescent luminescent material. １ The level is the S of the fluorescent material. １ It is preferable that the T of the TADF material is higher than the T level. １ The level is the S of the fluorescent material. １ Therefore, the T １ The level is the T １ It is preferable that the level is higher.

[0193] It is also preferable to use a TADF material that emits light that overlaps with the wavelength of the lowest-energy absorption band of the fluorescent material, since this allows for smooth transfer of excitation energy from the TADF material to the fluorescent material, resulting in efficient light emission.

[0194] Furthermore, in order to efficiently generate singlet excitation energy from triplet excitation energy through reverse intersystem crossing, it is preferable that carrier recombination occurs in the TADF material. It is also preferable that the triplet excitation energy generated in the TADF material does not transfer to the triplet excitation energy of the fluorescent material. To this end, it is preferable that the fluorescent material has a protecting group around the luminophore (the skeleton responsible for light emission) possessed by the fluorescent material. The protecting group is preferably a substituent without a π bond, and is preferably a saturated hydrocarbon. Specific examples include alkyl groups having 3 to 10 carbon atoms, substituted or unsubstituted cycloalkyl groups having 3 to 10 carbon atoms, and trialkylsilyl groups having 3 to 10 carbon atoms. It is even more preferable that the protecting group has multiple protecting groups. Substituents without a π bond have poor carrier transport function, so the distance between the TADF material and the luminophore of the fluorescent material can be increased without significantly affecting carrier transport or carrier recombination. Here, the luminophore refers to the atomic group (skeleton) responsible for light emission in the fluorescent material. The luminophore preferably has a skeleton having a π bond, preferably contains an aromatic ring, and preferably has a fused aromatic ring or a fused heteroaromatic ring. Examples of such luminophores include a phenanthrene skeleton, a stilbene skeleton, an acridone skeleton, a phenoxazine skeleton, a phenothiazine skeleton, a naphthalene skeleton, an anthracene skeleton, a fluorene skeleton, a chrysene skeleton, a triphenylene skeleton, a tetracene skeleton, a pyrene skeleton, a perylene skeleton, a coumarin skeleton, a quinacridone skeleton, and a naphthobisbenzofuran skeleton. In particular, fluorescent materials having a naphthalene skeleton, an anthracene skeleton, a fluorene skeleton, a chrysene skeleton, a triphenylene skeleton, a tetracene skeleton, a pyrene skeleton, a perylene skeleton, a coumarin skeleton, a quinacridone skeleton, or a naphthobisbenzofuran skeleton are preferred because of their high fluorescence quantum yield.

[0195] When a fluorescent substance is used as the light-emitting substance in the light-emitting layer 113, a material having an acene skeleton, particularly an anthracene skeleton, is suitable as the host material. Using a substance having an anthracene skeleton as a host material for a fluorescent substance makes it possible to realize an light-emitting layer with both excellent luminous efficiency and durability. As a substance having an anthracene skeleton used as a host material, a diphenylanthracene skeleton, particularly a 9,10-diphenylanthracene skeleton, is preferred because it is chemically stable. Furthermore, a host material having a carbazole skeleton is preferred because it enhances hole injection and transport properties. However, a host material including a benzocarbazole skeleton in which a benzene ring is further condensed to carbazole is more preferred because the HOMO level is about 0.1 eV higher than that of a host material including a carbazole skeleton, making it easier for holes to enter. In particular, a host material including a dibenzocarbazole skeleton is preferred because the HOMO level is about 0.1 eV higher than that of a host material including a carbazole skeleton, making it easier for holes to enter, and it also has excellent hole transport properties and high heat resistance. Therefore, a more preferable host material is a substance having both a 9,10-diphenylanthracene skeleton and a carbazole skeleton (or a benzocarbazole skeleton or a dibenzocarbazole skeleton). Note that, in view of the hole injection / transport property, a benzofluorene skeleton or a dibenzofluorene skeleton may be used instead of the carbazole skeleton.

[0196] Examples of such substances include 9-phenyl-3-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation: PCzPA), 3-[4-(1-naphthyl)phenyl]-9-phenyl-9H-carbazole (abbreviation: PCPN), 9-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviation: CzPA), 7-[4-(10-phenyl-9-anthryl)phenyl]-7H-dibenzo[c,g]carbazole (abbreviation: cgDBCzPA), 6-[3-(9,10-diphenyl-2-anthryl)phenyl]benzo[b]naphtho[1,2-d]furan (abbreviation: 2mBnfPPA), 9-phenyl-10-[4-(9-phenyl-9H-fluoren-9-yl)biphenyl-4′- 9-(1-naphthyl)-10-[4-(2-naphthyl)phenyl]anthracene (abbreviation: αN-βNPAnth), 9-(1-naphthyl)-10-(2-naphthyl)anthracene (abbreviation: α,βADN), 2-(10-phenylanthracen-9-yl)dibenzofuran, 2-(10-phenyl-9-anthracenyl)benzo Examples include zo[b]naphtho[2,3-d]furan (abbreviation: Bnf(II)PhA), 9-(2-naphthyl)-10-[3-(2-naphthyl)phenyl]anthracene (abbreviation: βN-mβNPAnth), 1-{4-[10-(biphenyl-4-yl)-9-anthracenyl]phenyl}-2-ethyl-1H-benzimidazole (abbreviation: EtBImPBPhA), etc. In particular, CzPA, cgDBCzPA, 2mBnfPPA, and PCzPA are preferred choices because they exhibit very good properties.

[0197] The host material may be a mixture of a plurality of substances. When a mixture of host materials is used, it is preferable to mix a substance having an electron-transporting property with a substance having a hole-transporting property. By mixing a substance having an electron-transporting property with a substance having a hole-transporting property, the transport property of the light-emitting layer 113 can be easily adjusted, and the recombination region can also be easily controlled. The weight ratio of the content of the substance having a hole-transporting property to the substance having an electron-transporting property is preferably 1:19 to 19:1.

[0198] A phosphorescent material can be used as part of the mixed host material. The phosphorescent material can be used as an energy donor that provides excitation energy to a fluorescent material when the fluorescent material is used as an emitting material.

[0199] These mixed materials may also form an exciplex. The exciplex is preferably selected from a combination that forms an exciplex that emits light that overlaps with the lowest-energy absorption band of the light-emitting material, because this allows for smooth energy transfer and efficient light emission. Furthermore, this configuration is also preferable because it reduces the driving voltage.

[0200] At least one of the materials forming the exciplex may be a phosphorescent material, which allows triplet excitation energy to be efficiently converted into singlet excitation energy by reverse intersystem crossing.

[0201] As a combination of materials that efficiently form an exciplex, it is preferable that the HOMO level of the substance having hole-transporting properties be equal to or higher than the HOMO level of the substance having electron-transporting properties. It is also preferable that the LUMO level of the substance having hole-transporting properties be equal to or higher than the LUMO level of the substance having electron-transporting properties. The LUMO level and HOMO level of a material can be derived from the electrochemical properties (reduction potential and oxidation potential) of the material measured by cyclic voltammetry (CV).

[0202] The formation of an exciplex can be confirmed, for example, by comparing the emission spectra of a substance having hole-transporting properties, a substance having electron-transporting properties, and a mixed film obtained by mixing these materials, and observing the phenomenon that the emission spectrum of the mixed film is shifted to a longer wavelength than the emission spectra of each material (or has a new peak on the longer wavelength side). Alternatively, the formation of an exciplex can be confirmed by comparing the transient photoluminescence (PL) of a substance having hole-transporting properties, the transient PL of a substance having electron-transporting properties, and a mixed film obtained by mixing these materials, and observing differences in transient response, such as the transient PL lifetime of the mixed film having a longer-lifetime component or a larger proportion of delayed components than the transient PL lifetimes of each material. The above-mentioned transient PL may also be interpreted as transient electroluminescence (EL). That is, the formation of an exciplex can also be confirmed by comparing the transient EL of a substance having hole-transporting properties, the transient EL of a substance having electron-transporting properties, and a mixed film obtained by mixing these materials, and observing the differences in transient response.

[0203] The electron transport layer 114 is a layer containing a substance having an electron transport property. The substance having an electron transport property is a material having an electron mobility of 1×10 or more at a square root of an electric field strength [V / cm] of 600. −７ cm ２ / Vs or more, preferably 1×10 −６ cm ２ A substance having an electron mobility of 1 / Vs or more is preferred. Note that, other substances can be used as long as they have a higher electron transporting property than holes. Note that, as the organic compound, an organic compound having a π-electron-deficient heteroaromatic ring is preferred. As the organic compound having a π-electron-deficient heteroaromatic ring, for example, one or more of an organic compound including a heteroaromatic ring having a polyazole skeleton, an organic compound including a heteroaromatic ring having a pyridine skeleton, an organic compound including a heteroaromatic ring having a diazine skeleton, and an organic compound including a heteroaromatic ring having a triazine skeleton are preferred.

[0204] As a substance having electron transport properties that can be used for the electron-transport layer 114, organic compounds that can be used for the substance having electron transport properties in the light-emitting layer 113 can be used similarly. Among them, organic compounds including a heteroaromatic ring having a diazine skeleton, an organic compound including a heteroaromatic ring having a pyridine skeleton, and an organic compound including a heteroaromatic ring having a triazine skeleton are preferred because of their high reliability. In particular, organic compounds including a heteroaromatic ring having a diazine (pyrimidine or pyrazine) skeleton and an organic compound including a heteroaromatic ring having a triazine skeleton have high electron transport properties and contribute to reducing driving voltage. In particular, organic compounds having a phenanthroline skeleton, such as mTpPPhen, PnNPhen, and mPPhen2P, are preferred, and organic compounds having a phenanthroline dimer structure, such as mPPhen2P, are more preferred because of their excellent stability. Note that the electron-transport layer 114 is preferably made of an organic compound represented by the general formula (Ge1) described in Embodiment 1.

[0205] The electron transport layer 114 may have a stacked structure. Furthermore, a layer in the electron transport layer 114 having a stacked structure that is in contact with the light-emitting layer 113 may function as a hole-blocking layer. When the electron transport layer in contact with the light-emitting layer is made to function as a hole-blocking layer, a material whose HOMO level is lower by 0.5 eV or more than the HOMO level of a material contained in the light-emitting layer 113 is preferably used. The organic compound represented by the general formula (Ge1) described in Embodiment 1 has excellent hole-blocking properties, and therefore is preferably used in the electron transport layer 114 in contact with the light-emitting layer 113.

[0206] A layer containing a compound or complex of an alkali metal or alkaline earth metal such as 8-hydroxyquinolinato-lithium (abbreviation: Liq), or 1,1′-pyridine-2,6-diyl-bis(1,3,4,6,7,8-hexahydro-2H-pyrimido[1,2-a]pyrimidine) (abbreviation: hpp2Py) may be provided as the electron-injection layer 115. The electron-injection layer 115 may be a layer made of a substance having an electron-transporting property containing an alkali metal, an alkaline earth metal, or a compound thereof.

[0207] Alternatively, a charge generation layer 116 may be provided instead of the electron injection layer 115 ( FIG. 1B ). The charge generation layer 116 is a layer capable of injecting holes into a layer in contact with the cathode side of the charge generation layer 116 and electrons into a layer in contact with the anode side of the charge generation layer 116 by applying a potential thereto. The charge generation layer 116 includes at least a P-type layer 117. The P-type layer 117 is preferably formed using the composite material listed above as a material that can be used to form the hole injection layer 111. The P-type layer 117 may also be formed by stacking a film containing an acceptor material and a film containing a hole transport material, both of which are materials that can be used to form the composite material. By applying a potential to the P-type layer 117, electrons are injected into the electron transport layer 114 and holes are injected into the cathode, thereby operating the light-emitting device. Furthermore, since the organic compound of one embodiment of the present invention has a low refractive index, its use in the P-type layer 117 allows for the production of a light-emitting device with excellent external quantum efficiency.

[0208] It is preferable that the charge generating layer 116 be provided with either or both of an electron relay layer 118 and an electron injection buffer layer 119 in addition to the P-type layer 117 .

[0209] The electron relay layer 118 contains at least a substance having electron transport properties and has the function of preventing interaction between the electron injection buffer layer 119 and the P-type layer 117 and smoothly transferring electrons. The LUMO level of the substance having electron transport properties contained in the electron relay layer 118 is preferably located between the LUMO level of the acceptor substance in the P-type layer 117 and the LUMO level of the substance contained in the layer of the electron transport layer 114 that is in contact with the charge generation layer 116. The specific energy level of the LUMO level of the substance having electron transport properties used in the electron relay layer 118 is preferably −5.0 eV or higher, preferably −5.0 eV or higher to −3.0 eV or lower, more preferably −4.30 eV or higher to −3.00 eV or lower, and more preferably −4.30 eV or higher to −3.30 eV or lower, because this can suppress an increase in driving voltage. As the substance having electron transport properties used in the electron relay layer 118, a phthalocyanine-based material or a metal complex having a metal-oxygen bond and an aromatic ligand is preferably used.

[0210] Specific examples of the substance having electron transport properties that can be used in the electron relay layer 118 include diquinoxalino[2,3-a:2′,3′-c]phenazine (abbreviation: HATNA), 2,3,8,9,14,15-hexafluorodiquinoxalino[2,3-a:2′,3′-c]phenazine (abbreviation: HATNA-F6), perylene tetracarboxylic acid derivatives such as 3,4,9,10-perylene tetracarboxylic diimide (abbreviation: PTCDI) and 3,4,9,10-perylene tetracarboxylic bis-benzimidazole (abbreviation: PTCBI), (C60-Ih)[5,6]fullerene (abbreviation: C60), and (C70-D5h)[5,6]fullerene (abbreviation: C70). Furthermore, a compound having a heterophane skeleton, which is a cyclophane skeleton containing a heterocycle, can be used. Examples of such a compound include phthalocyanine (abbreviation: H ２ Phthalocyanine compounds such as copper phthalocyanine (abbreviated as CuPc), zinc phthalocyanine (abbreviated as ZnPc), cobalt phthalocyanine (abbreviated as CoPc), iron phthalocyanine (abbreviated as FePc), tin phthalocyanine (abbreviated as SnPc), tin oxide phthalocyanine (abbreviated as SnOPc), titanium oxide phthalocyanine (abbreviated as TiOPc), vanadium oxide phthalocyanine (abbreviated as VOPc), and their derivatives can also be used. Phthalocyanine-based metal complexes such as copper phthalocyanine or zinc phthalocyanine, or 2,3,8,9,14,15-hexafluorodiquinoxalino[2,3-a:2',3'-c]phenazine are particularly preferred.

[0211] The electron injection buffer layer 119 can be made of a material with high electron injection properties, such as an alkali metal, an alkaline earth metal, a rare earth metal, or a compound thereof (an alkali metal compound (including an oxide such as lithium oxide, a halide, or a carbonate such as lithium carbonate or cesium carbonate), an alkaline earth metal compound (including an oxide, a halide, or a carbonate), or a rare earth metal compound (including an oxide, a halide, or a carbonate)).

[0212] When the electron-injection buffer layer 119 is formed to contain a substance having electron-transporting properties and a donor substance, examples of the donor substance include alkali metals, alkaline earth metals, rare earth metals, and compounds thereof (alkali metal compounds (including oxides such as lithium oxide, halides, and carbonates such as lithium carbonate and cesium carbonate), alkaline earth metal compounds (including oxides, halides, and carbonates), and rare earth metal compounds (including oxides, halides, and carbonates)), as well as organic compounds such as tetrathianaphthacene (abbreviation: TTN), nickelocene, and decamethylnickelocene. Note that the substance having electron-transporting properties can be formed using the same material as the material constituting the electron-transporting layer 114 described above.

[0213] The second electrode 102 is an electrode including a cathode. The second electrode 102 may have a laminated structure, in which case the layer in contact with the organic compound layer 103 functions as the cathode. Materials that form the cathode include metals, alloys, electrically conductive compounds, and mixtures thereof, each having a small work function (specifically, 3.8 eV or less). Specific examples of such cathode materials include alkali metals such as lithium (Li) or cesium (Cs), elements belonging to Group 1 or Group 2 of the periodic table such as magnesium (Mg), calcium (Ca), and strontium (Sr), and alloys (MgAg, AlLi) and compounds (lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF), etc.) containing these elements. ２ However, by providing the electron injection layer 115 or a thin film of the above-mentioned material having a small work function between the second electrode 102 and the electron transport layer, various conductive materials such as Al, Ag, ITO, indium oxide-tin oxide containing silicon or silicon oxide can be used as the cathode regardless of the magnitude of the work function.

[0214] Note that when the second electrode 102 is formed using a material that is transparent to visible light, a light-emitting device that emits light from the second electrode 102 side can be obtained.

[0215] These conductive materials can be formed into films by dry methods such as vacuum deposition or sputtering, inkjet methods, spin coating methods, etc. Alternatively, they may be formed by wet methods using a sol-gel method, or by wet methods using a paste of a metal material.

[0216] In addition, various methods, whether dry or wet, can be used to form the organic compound layer 103. For example, vacuum deposition, gravure printing, offset printing, screen printing, inkjet printing, spin coating, or the like may be used.

[0217] Furthermore, the above-mentioned electrodes or layers may be formed using different film formation methods.

[0218] Next, an embodiment of a light-emitting device having a configuration in which multiple light-emitting units are stacked (also referred to as a stacked element or a tandem element) will be described with reference to FIG. 1C . This light-emitting device has multiple light-emitting units between an anode and a cathode. One light-emitting unit has a configuration substantially similar to that of the organic compound layer 103 shown in FIG. 1A . In other words, the light-emitting device shown in FIG. 1C is a light-emitting device having multiple light-emitting units, and the light-emitting device shown in FIG. 1A or 1B can be said to be a light-emitting device having one light-emitting unit.

[0219] 1C , a first light-emitting unit 511 and a second light-emitting unit 512 are stacked between a first electrode 501 and a second electrode 502, and a charge generation layer 513 is provided between the first light-emitting unit 511 and the second light-emitting unit 512. The first electrode 501 and the second electrode 502 correspond to the first electrode 101 and the second electrode 102 in FIG. 1A , respectively, and the same elements as those described in the description of FIG. 1A can be applied to them. In addition, the first light-emitting unit 511 and the second light-emitting unit 512 may have the same structure or different structures.

[0220] The charge generation layer 513 has a function of injecting electrons into one light-emitting unit and injecting holes into the other light-emitting unit when a voltage is applied between the first electrode 501 and the second electrode 502. That is, in FIG. 1C , when a voltage is applied so that the potential of the anode is higher than the potential of the cathode, the charge generation layer 513 may inject electrons into the first light-emitting unit 511 and inject holes into the second light-emitting unit 512.

[0221] The charge generation layer 513 is preferably formed to have the same structure as the charge generation layer 116 described in FIG. 1B. A composite material of an organic compound and a metal oxide has excellent carrier injection and carrier transport properties, and therefore can achieve low-voltage driving and low-current driving. Note that when the anode side surface of the light-emitting unit is in contact with the charge generation layer 513, the charge generation layer 513 can also serve as a hole injection layer for the light-emitting unit, and therefore the light-emitting unit does not need to be provided with a hole injection layer.

[0222] Furthermore, when the electron injection buffer layer 119 is provided in the charge generation layer 513, the electron injection buffer layer 119 plays the role of an electron injection layer in the light-emitting unit on the anode side, and therefore, it is not necessarily required to form an electron injection layer in the light-emitting unit on the anode side.

[0223] 1C illustrates a light-emitting device having two light-emitting units, but the present invention can be applied to a light-emitting device having three or more stacked light-emitting units. By arranging a plurality of light-emitting units between a pair of electrodes and separating them with a charge generating layer 513, as in the light-emitting device according to this embodiment, a light-emitting device can be realized that emits high-luminance light while maintaining a low current density and has a long life. Furthermore, a light-emitting device that can be driven at a low voltage and consumes low power can be realized.

[0224] Furthermore, by making the emission colors of the respective light-emitting units different, it is possible to obtain light emission of a desired color from the light-emitting device as a whole. For example, in a light-emitting device having two light-emitting units, it is possible to obtain a light-emitting device that emits white light from the entire device by obtaining red and green emission colors from the first light-emitting unit and blue emission color from the second light-emitting unit.

[0225] Furthermore, each layer and electrode such as the organic compound layer 103, the first light-emitting unit 511, the second light-emitting unit 512, and the charge generation layer can be formed by, for example, a vapor deposition method (including a vacuum vapor deposition method), a droplet discharge method (also called an ink-jet method), a coating method, a gravure printing method, etc. Furthermore, they may contain a low-molecular-weight material, a medium-molecular-weight material (including an oligomer and a dendrimer), or a polymer material.

[0226] Next, an organic semiconductor device according to one embodiment of the present invention will be described.

[0227] 2 is a schematic diagram of a photosensor of one embodiment of the present invention. The photosensor includes a first electrode 101S over an insulator 100S and an organic compound layer 103S between the first electrode 101S and a second electrode 102S. The organic compound layer 103S includes at least a photoelectric conversion layer 123 and may further include a layer having a different function. The organic compound layer 103 includes any one of the organic compounds represented by General Formulas (Gh1) to (Gh6-2) in Embodiment 1 and an organic compound represented by General Formula (Ge1).

[0228] The photoelectric conversion layer 123 is a layer that generates carriers and includes a p-type semiconductor and an n-type semiconductor. Charges are generated by light 124 incident on the photoelectric conversion layer 123, and can be extracted as a current.

[0229] 2, the organic compound layer 103S preferably has functional layers such as a hole injection layer 111S, a hole transport layer 112S, an electron transport layer 114S, and an electron injection layer 115S in addition to the photoelectric conversion layer 123. The organic compound layer 103S may also include functional layers other than the functional layers described above. Conversely, any of the layers described above may not be provided.

[0230] Note that the organic compounds represented by General Formulas (Gh1) to (G6-2) in Embodiment 1 are preferably contained in a layer through which holes are transported. Examples of the layer through which holes are transported include a hole injection layer, a hole transport layer, an electron blocking layer, and a photoelectric conversion layer. Furthermore, the organic compound represented by General Formula (Ge1) in Embodiment 1 is preferably contained in a layer through which electrons are transported. Examples of the layer through which electrons are transported include an electron injection layer, an electron transport layer, a hole blocking layer, and a photoelectric conversion layer.

[0231] In this embodiment, the first electrode 101S and the second electrode 102S are formed as a single layer structure or a stacked layer structure. In the case of a stacked layer structure, the layer in contact with the organic compound layer 103 functions as an anode or a cathode. When the electrodes have a stacked layer structure, there are no restrictions on the work function of layers other than the layer in contact with the organic compound layer 103, and materials can be selected according to required characteristics such as resistance, ease of processing, reflectance, light transmittance, and stability. The first electrode 101S and the second electrode 102S can be formed using the same materials as the first electrode 101 and the second electrode 102. However, the electrode that captures light is preferably formed using a material that is transparent to light of a wavelength that can be photoelectrically converted in the photoelectric conversion layer. Note that, for the first electrode 101S and the second electrode 102S, the electrode that accepts holes is preferably made of a material listed as being preferably used as an anode in a light-emitting device, and the electrode that accepts electrons is preferably made of a material listed as being preferably used as a cathode in a light-emitting device.

[0232] The hole-injection layer 111S, the hole-transport layer 112S, the electron-transport layer 114S, the electron-injection layer 115S, and other functional layers can be made of the same materials as those listed as the functional layers constituting the light-emitting device. Note that the layer having a hole-transporting function preferably contains the organic compound of one embodiment of the present invention.

[0233] The photoelectric conversion layer 123 is a layer that generates carriers based on incident light and is a layer that includes a semiconductor. Examples of the semiconductor include inorganic semiconductors such as silicon and organic semiconductors that include organic compounds. In this embodiment, an example in which an organic semiconductor is used as the semiconductor included in the active layer is shown. Using an organic semiconductor is preferable because the light-emitting layer and the active layer can be formed by the same method (for example, vacuum deposition), and a common manufacturing device can be used.

[0234] The photoelectric conversion layer 123 contains at least a p-type semiconductor material and an n-type semiconductor material.

[0235] Examples of p-type semiconductor materials include electron-donating organic semiconductor materials such as copper(II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), zinc phthalocyanine (ZnPc), tin phthalocyanine (SnPc), and quinacridone.

[0236] Examples of p-type semiconductor materials include carbazole derivatives, thiophene derivatives, furan derivatives, compounds having an aromatic amine skeleton, etc. Examples of p-type semiconductor materials include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives, polyphenylenevinylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, polythiophene derivatives, etc.

[0237] As n-type semiconductor materials, fullerenes (e.g., C ６０ , C ７０Examples of suitable electron-accepting organic semiconductor materials include fullerene derivatives and other electron-accepting organic semiconductor materials. Fullerenes have a soccer ball-like shape, and this shape is energetically stable. Fullerenes have deep (low) highest occupied molecular orbital (HOMO) levels and LUMO levels. Because fullerenes have deep LUMO levels, they have extremely high electron-accepting (acceptor) properties. Normally, when π-electron conjugation (resonance) spreads on a plane, as in benzene, electron-donating (donor) properties increase, but fullerenes have a spherical shape, so they have high electron-accepting properties despite the wide spread π-electron conjugation. High electron-accepting properties allow charge separation to occur quickly and efficiently, making them useful as photoelectric conversion devices. C ６０ , C ７０ Both have a wide absorption band in the visible light region, and C ７０ is C ６０ In addition, as a fullerene derivative, [6,6]-phenyl-C is preferred because it has a larger π-electron conjugated system and a wide absorption band in the long wavelength region. ７１ -butyric acid methyl ester (abbreviation: PC71BM), [6,6]-Phenyl-C ６１ -butyric acid methyl ester (abbreviation: PC61BM), 1', 1'', 4', 4''-Tetrahydro-di [1, 4] methanonaphthaleno [1, 2: 2', 3', 56, 60: 2'', 3''] [5, 6] fullerene-C ６０ (abbreviation: ICBA) and others.

[0238] Examples of n-type semiconductor materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, and quinone derivatives.

[0239] Moreover, the photoelectric conversion layer 123 is preferably a laminated film of a first layer having a p-type semiconductor material and a second layer having an n-type semiconductor material.

[0240] In the light-emitting devices having the above configurations, the photoelectric conversion layer 123 is preferably a mixed film containing a p-type semiconductor material and an n-type semiconductor material.

[0241] The HOMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the HOMO level of the electron-accepting organic semiconductor material, and the LUMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the LUMO level of the electron-accepting organic semiconductor material.

[0242] Note that a spherical fullerene may be used as the electron-accepting organic semiconductor material, and a planar organic semiconductor material may be used as the electron-donating organic semiconductor material. Molecules with similar shapes tend to aggregate together, and when molecules of the same type aggregate, the energy levels of their molecular orbitals become close, which can improve carrier transport properties.

[0243] (Embodiment 3) In this embodiment, a display device manufactured using the light-emitting device described in Embodiments 1 and 2 will be described with reference to Fig. 3. Fig. 3A is a top view showing the display device, and Fig. 3B is a cross-sectional view taken along lines A-B and C-D in Fig. 3A. This display device includes a driver circuit section (source line driver circuit) 601, a pixel section 602, and a driver circuit section (gate line driver circuit) 603, all of which are shown by dotted lines, to control light emission from the light-emitting device. Also, 604 is a sealing substrate, 605 is a sealant, and the inside surrounded by the sealant 605 is a space 607.

[0244] The lead wiring 608 is wiring for transmitting signals input to the source line driver circuit 601 and the gate line driver circuit 603, and receives video signals, clock signals, start signals, reset signals, etc. from an FPC (flexible print circuit) 609, which serves as an external input terminal. Although only the FPC is shown here, a printed wiring board (PWB) may be attached to this FPC. The display device in this specification includes not only the display device itself, but also a state in which an FPC or PWB is attached to it.

[0245] Next, the cross-sectional structure will be described with reference to Fig. 3B. A driver circuit portion and a pixel portion are formed on an element substrate 610, and here, a source line driver circuit 601, which is the driver circuit portion, and one pixel in a pixel portion 602 are shown.

[0246] The element substrate 610 can be made using a substrate made of glass, quartz, organic resin, metal, alloy, semiconductor, or the like, as well as a plastic substrate made of FRP (Fiber Reinforced Plastics), PVF (Polyvinyl Fluoride), polyester, acrylic resin, or the like.

[0247] The structure of the transistors used in the pixels and the driver circuits is not particularly limited. For example, they may be inverted staggered transistors or staggered transistors. Furthermore, they may be top-gate or bottom-gate transistors. The semiconductor material used for the transistors is not particularly limited, and examples thereof include silicon, germanium, silicon carbide, and gallium nitride. Alternatively, an oxide semiconductor containing at least one of indium, gallium, and zinc, such as an In—Ga—Zn-based metal oxide, may be used.

[0248] The crystallinity of a semiconductor material used for a transistor is not particularly limited, and any of an amorphous semiconductor and a crystalline semiconductor (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor having a crystalline region in part) may be used. The use of a crystalline semiconductor is preferable because it can suppress deterioration of transistor characteristics.

[0249] Here, it is preferable to use an oxide semiconductor for the transistors provided in the pixel and the driver circuit, as well as for semiconductor devices such as transistors used in touch sensors, which will be described later. In particular, it is preferable to use an oxide semiconductor having a wider band gap than silicon. By using an oxide semiconductor having a wider band gap than silicon, the current in the off state of the transistor can be reduced.

[0250] The oxide semiconductor preferably contains at least indium (In) or zinc (Zn), and more preferably contains an oxide represented by In-M-Zn-based oxide (M is a metal such as Al, Ti, Ga, Ge, Y, Zr, Sn, La, Ce, or Hf).

[0251] In particular, it is preferable to use, as the semiconductor layer, an oxide semiconductor film which has a plurality of crystal parts whose c-axes are oriented perpendicular to a surface on which the semiconductor layer is formed or a top surface of the semiconductor layer and which does not have grain boundaries between adjacent crystal parts.

[0252] By using such a material for the semiconductor layer, fluctuations in electrical characteristics are suppressed, and a highly reliable transistor can be realized.

[0253] Furthermore, a transistor having the above-described semiconductor layer can retain charge stored in a capacitor through the transistor for a long period of time due to its low off-state current. By applying such a transistor to a pixel, it is possible to stop the driver circuit while maintaining the gray level of each image displayed in the display area. As a result, an electronic device with extremely low power consumption can be realized.

[0254] For example, to stabilize the characteristics of a transistor, it is preferable to provide a base film. The base film can be formed as a single layer or a stacked layer using an inorganic insulating film such as a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or a silicon nitride oxide film. The base film can be formed by a sputtering method, a CVD (Chemical Vapor Deposition) method (such as a plasma CVD method, a thermal CVD method, or a MOCVD (Metal Organic CVD) method), an ALD (Atomic Layer Deposition) method, a coating method, a printing method, or the like. Note that the base film need not be provided if it is not necessary.

[0255] The FET 623 indicates one of the transistors formed in the drive circuit section 601. The drive circuit may be formed of various CMOS circuits, PMOS circuits, or NMOS circuits. Although this embodiment shows a driver-integrated type in which the drive circuit is formed on a substrate, this is not necessarily required, and the drive circuit may also be formed externally rather than on the substrate.

[0256] Furthermore, the pixel portion 602 is formed by a plurality of pixels including a switching FET 611, a current control FET 612, and a first electrode 613 electrically connected to the drain of the FET, but is not limited to this, and the pixel portion may be formed by combining three or more FETs and a capacitance element.

[0257] An insulator 614 is formed to cover an end portion of the first electrode 613. Here, the insulator 614 can be formed by using a positive photosensitive acrylic resin film.

[0258] Furthermore, in order to improve the coverage of organic compound layers and the like to be formed later, a curved surface having a curvature is formed at the upper or lower end of the insulator 614. For example, when a positive photosensitive acrylic resin is used as the material for the insulator 614, it is preferable to provide a curved surface having a curvature radius (0.2 μm to 3 μm) only at the upper end of the insulator 614. Furthermore, either a negative photosensitive resin or a positive photosensitive resin can be used as the insulator 614.

[0259] An organic compound layer 616 and a second electrode 617 are formed on the first electrode 613. Here, it is desirable to use a material with a large work function as the material used for the first electrode 613, which functions as an anode. For example, a single layer film such as an ITO film, an indium tin oxide film containing silicon, an indium oxide film containing 2 to 20 wt % zinc oxide, a titanium nitride film, a chromium film, a tungsten film, a Zn film, or a Pt film can be used. It is also possible to use a stacked structure of a titanium nitride film and a film mainly composed of aluminum, or a three-layer structure of a titanium nitride film, a film mainly composed of aluminum, and a titanium nitride film. The stacked structure provides low resistance as a wiring, good ohmic contact, and the first electrode 613 can further function as an anode.

[0260] The organic compound layer 616 is formed by various methods such as a vapor deposition method using a vapor deposition mask, an inkjet method, or a spin coating method. The organic compound layer 616 includes the structures described in Embodiment Mode 1 and Embodiment Mode 2. Other materials constituting the organic compound layer 616 may be low-molecular-weight compounds or high-molecular-weight compounds (including oligomers and dendrimers).

[0261] Furthermore, as a material used for the second electrode 617 formed on the organic compound layer 616 and functioning as a cathode, a material having a small work function (Al, Mg, Li, Ca, or alloys and compounds thereof (MgAg, MgIn, AlLi, etc.)) is preferably used. Note that, when light generated in the organic compound layer 616 is transmitted through the second electrode 617, it is preferable to use a stack of a thin metal thin film and a transparent conductive film (ITO, indium oxide containing 2 to 20 wt % zinc oxide, indium tin oxide containing silicon, zinc oxide (ZnO), etc.) as the second electrode 617.

[0262] Note that a light-emitting device is formed with the first electrode 613, the organic compound layer 616, and the second electrode 617. The light-emitting device is the light-emitting device described in Embodiment Mode 1 and Embodiment Mode 2. Note that a pixel portion is formed with a plurality of light-emitting devices, but the display device in this embodiment mode may include both the light-emitting devices described in Embodiment Mode 1 and Embodiment Mode 2 and light-emitting devices having other structures.

[0263] Furthermore, by bonding the sealing substrate 604 to the element substrate 610 with a sealing material 605, a structure is formed in which a light-emitting device 618 is provided in a space 607 surrounded by the element substrate 610, the sealing substrate 604, and the sealing material 605. The space 607 is filled with a filler, and in some cases, the space is filled with an inert gas (nitrogen, argon, etc.), or with a sealing material. A recess is formed in the sealing substrate, and by providing a desiccant therein, deterioration due to the influence of moisture can be suppressed, which is a preferable configuration.

[0264] It is preferable to use epoxy resin or glass frit for the sealing material 605. It is also desirable that these materials are as moisture and oxygen impermeable as possible. In addition, materials that can be used for the sealing substrate 604 include glass substrates, quartz substrates, and plastic substrates made of FRP (Fiber Reinforced Plastics), PVF (Polyvinyl Fluoride), polyester, acrylic resin, etc.

[0265] Although not shown in FIG. 3 , a protective film may be provided on the second electrode. The protective film may be formed of an organic resin film or an inorganic insulating film. The protective film may also be formed so as to cover the exposed portion of the sealing material 605. The protective film may also be provided so as to cover the surfaces and side surfaces of the pair of substrates, the exposed side surfaces of the sealing layer, the insulating layer, and the like.

[0266] The protective film can be made of a material that is impermeable to impurities such as water, and therefore can effectively prevent impurities such as water from diffusing from the outside to the inside.

[0267] The protective film may be made of an oxide, nitride, fluoride, sulfide, ternary compound, metal, polymer, or the like. For example, a material containing aluminum oxide, hafnium oxide, hafnium silicate, lanthanum oxide, silicon oxide, strontium titanate, tantalum oxide, titanium oxide, zinc oxide, niobium oxide, zirconium oxide, tin oxide, yttrium oxide, cerium oxide, scandium oxide, erbium oxide, vanadium oxide, indium oxide, or the like; a material containing aluminum nitride, hafnium nitride, silicon nitride, tantalum nitride, titanium nitride, niobium nitride, molybdenum nitride, zirconium nitride, or gallium nitride, or the like; a nitride containing titanium and aluminum, an oxide containing titanium and aluminum, an oxide containing aluminum and zinc, a sulfide containing manganese and zinc, a sulfide containing cerium and strontium, an oxide containing erbium and aluminum, or an oxide containing yttrium and zirconium, or the like.

[0268] The protective film is preferably formed using a film formation method that provides good step coverage. One such method is atomic layer deposition (ALD). It is preferable to use a material that can be formed using the ALD method for the protective film. By using the ALD method, it is possible to form a dense protective film with reduced defects such as cracks and pinholes, or with a uniform thickness. Furthermore, it is possible to reduce damage to the workpiece when forming the protective film.

[0269] For example, by forming a protective film using the ALD method, it is possible to form a uniform protective film with few defects on surfaces having complex uneven shapes, including the top, side, and back surfaces of the touch panel.

[0270] In this manner, a display device manufactured using the light-emitting device described in Embodiment 1 or 2 can be obtained.

[0271] The display device in this embodiment uses the light-emitting device described in Embodiment 1 or 2, and therefore, a display device with favorable characteristics can be obtained. Specifically, the light-emitting devices described in Embodiments 1 and 2 have high emission efficiency, and therefore, a display device with low power consumption can be obtained. Furthermore, the light-emitting devices described in Embodiments 1 and 2 have high reliability, and therefore, a display device with favorable reliability can be obtained. In addition, the light-emitting devices described in Embodiments 1 and 2 can be light-emitting devices with favorable chromaticity and color purity, and therefore, a display device with favorable display quality can be obtained.

[0272] This embodiment mode can be freely combined with other embodiment modes.

[0273] 4A and 4B, a display device is formed by forming a plurality of light-emitting devices 130 over an insulating layer 175. In this embodiment, a display device according to another embodiment of the present invention will be described in detail.

[0274] The display device 100 has a pixel section 177 in which a plurality of pixels 178 are arranged in a matrix. The pixel 178 has a sub-pixel 110R, a sub-pixel 110G, and a sub-pixel 110B.

[0275] In this specification and the like, when describing matters common to, for example, the subpixels 110R, 110G, and 110B, they may be referred to as the subpixels 110. When describing matters common to other components distinguished by alphabets, they may also be described using symbols without the alphabets.

[0276] The sub-pixel 110R emits red light, the sub-pixel 110G emits green light, and the sub-pixel 110B emits blue light. This allows an image to be displayed in the pixel unit 177. Note that in this embodiment, sub-pixels of three colors, red (R), green (G), and blue (B), are described as an example, but combinations of sub-pixels of other colors may also be used. The number of sub-pixels is not limited to three, and may be four or more. Examples of four sub-pixels include sub-pixels of four colors, R, G, B, and white (W), sub-pixels of four colors, R, G, B, and Y, and sub-pixels of R, G, B, and infrared (IR).

[0277] In this specification, the row direction may be referred to as the X direction, and the column direction may be referred to as the Y direction. The X direction and the Y direction intersect, for example, perpendicularly.

[0278] 4A shows an example in which subpixels of different colors are arranged side by side in the X direction, and subpixels of the same color are arranged side by side in the Y direction. Note that subpixels of different colors may also be arranged side by side in the Y direction, and subpixels of the same color may also be arranged side by side in the X direction.

[0279] A connection portion 140 and a region 141 may be provided outside the pixel portion 177. When the region 141 is provided, the region 141 is provided between the pixel portion 177 and the connection portion 140. When the region 141 is provided, an organic compound layer (C) is provided in the region 141. In addition, a conductive layer 151C is provided in the connection portion 140.

[0280] 4 shows an example in which the region 141 and the connection portion 140 are located on the right side of the pixel portion 177, but the positions of the region 141 and the connection portion 140 are not particularly limited. The region 141 and the connection portion 140 may be singular or plural.

[0281] Fig. 4B is an example of a cross-sectional view taken along dashed line A1-A2 in Fig. 4A. As shown in Fig. 4B, display device 100 has insulating layer 171, conductive layer 172 on insulating layer 171, insulating layer 173 on insulating layer 171 and on conductive layer 172, insulating layer 174 on insulating layer 173, and insulating layer 175 on insulating layer 174. Insulating layer 171 is provided on a substrate (not shown). Insulating layer 175, insulating layer 174, and insulating layer 173 have openings that reach conductive layer 172, and plugs 176 are provided to fill the openings.

[0282] In the pixel section 177, the light-emitting device 130 is provided on the insulating layer 175 and the plug 176. A protective layer 131 is provided to cover the light-emitting device 130. The substrate 120 is bonded to the protective layer 131 by a resin layer 122. Preferably, an inorganic insulating layer 125 and an insulating layer 127 on the inorganic insulating layer 125 are provided between adjacent light-emitting devices 130.

[0283] Although Figure 4B shows multiple cross sections of the inorganic insulating layer 125 and the insulating layer 127, when viewing the display device 100 from above, it is preferable that the inorganic insulating layer 125 and the insulating layer 127 are each connected into one.

[0284] 4B shows light emitting device 130 as light emitting device 130R, light emitting device 130G, and light emitting device 130B. Light emitting device 130R, light emitting device 130G, and light emitting device 130B emit light of different colors. For example, light emitting device 130R can emit red light, light emitting device 130G can emit green light, and light emitting device 130B can emit blue light. Furthermore, light emitting device 130R, light emitting device 130G, or light emitting device 130B may emit other visible light or infrared light.

[0285] The display device of one embodiment of the present invention can be, for example, a top-emission type in which light is emitted in a direction opposite to a substrate on which a light-emitting device is formed. Note that the display device of one embodiment of the present invention may also be a bottom-emission type.

[0286] The light-emitting device 130R includes a first electrode 101R (pixel electrode) including a conductive layer 151R and a conductive layer 152R, an organic compound layer 103R on the first electrode, a common layer 104 on the organic compound layer 103R, and a second electrode (common electrode) 102 on the common layer. The common layer 104 may or may not be provided, but is preferably provided because it can reduce damage to the organic compound layer 103R during processing. The organic compound represented by the general formula (Ge1) and the organic compound represented by any one of the general formulas (Gh1) to (Gh6-2) contained in the light-emitting device 130G are preferably contained in the organic compound layer 103R.

[0287] The light-emitting device 130G includes a first electrode 101G (pixel electrode) including a conductive layer 151G and a conductive layer 152G, an organic compound layer 103G on the first electrode, a common layer 104 on the organic compound layer 103G, and a second electrode (common electrode) 102 on the common layer. The common layer 104 may or may not be provided, but is preferably provided because it can reduce damage to the organic compound layer 103G during processing. The organic compound represented by the general formula (Ge1) and the organic compound represented by any one of the general formulas (Gh1) to (Gh6-2) included in the light-emitting device 130G are preferably included in the organic compound layer 103G.

[0288] The light-emitting device 130B has the structure described in Embodiments 1 and 2. It includes a first electrode 101B (pixel electrode) including a conductive layer 151B and a conductive layer 152B, an organic compound layer 103B on the first electrode, a common layer 104 on the organic compound layer 103B, and a second electrode (common electrode) 102 on the common layer. The common layer 104 may or may not be provided, but is preferably provided because it can reduce damage to the organic compound layer 103B during processing. When the common layer 104 is provided, the stacked structure of the organic compound layer 103B and the common layer 104 corresponds to the organic compound layer 103 in Embodiments 1 and 2. The organic compound represented by the general formula (Ge1) and the organic compound represented by any one of the general formulas (Gh1) to (Gh6-2) are preferably included in the organic compound layer 103B.

[0289] Note that the common layer 104 is preferably an electron injection layer or an electron transport layer, and more preferably an electron injection layer. In addition, when the common layer 104 is an electron transport layer, the electron transport layer preferably has a stacked structure, and it is more preferable that the layer on the second electrode side of the stacked layers is the common layer 104 and the layer on the light-emitting layer side is the organic compound layer 103. The organic compound represented by the general formula (Ge1) and the organic compound represented by any one of the general formulas (Gh1) to (Gh6-2) are preferably contained in the organic compound layer 103B.

[0290] Since the organic compound layer 103B contains the organic compound represented by the general formula (Ge1) and the organic compound represented by any one of the general formulas (Gh1) to (Gh6-2), the light-emitting device 130B can be a light-emitting device with low driving voltage and high reliability. Furthermore, since the light-emitting device in this embodiment is a light-emitting device manufactured through a photolithography process, it can also be said to be a light-emitting device in which an increase in driving voltage due to the photolithography process is suppressed.

[0291] When the light-emitting device 130R contains an organic compound represented by the general formula (Ge1) and an organic compound represented by any one of the general formulas (Gh1) to (Gh6-2), it is preferable that they are contained in the organic compound layer 103R. When the light-emitting device 130G contains an organic compound represented by the general formula (Ge1) and an organic compound represented by any one of the general formulas (Gh1) to (Gh6-2), it is preferable that they are contained in the organic compound layer 103G.

[0292] When an organic compound represented by the general formula (Ge1) and an organic compound represented by any one of the general formulas (Gh1) to (Gh6-2) are used in one or both of the light-emitting device 130R and the light-emitting device 130G, the materials constituting the light-emitting devices can be standardized, resulting in significant cost benefits. The organic compound represented by the general formula (Ge1) and the organic compound represented by any one of the general formulas (Gh1) to (Gh6-2) exhibit greater effects in light-emitting devices that emit blue light, and when used in the light-emitting device 130R and the light-emitting device 130G, light-emitting devices with good characteristics can be provided.

[0293] Furthermore, since light-emitting device 130R and light-emitting device 130G are also light-emitting devices fabricated through a photolithography process, an increase in drive voltage due to the photolithography process is suppressed, and light-emitting devices with a low drive voltage can be obtained.

[0294] One of the pixel electrode and the common electrode of the light-emitting device 130 functions as an anode, and the other functions as a cathode. In the following description, unless otherwise specified, the pixel electrode functions as an anode and the common electrode functions as a cathode.

[0295] The organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B are independent island-shaped layers, one for each light-emitting device 130, or for each light-emitting color. By providing the organic compound layer 103 in an island shape for each light-emitting device 130, leakage current between adjacent light-emitting devices 130 can be suppressed even in a high-resolution display device. This makes it possible to prevent crosstalk and realize a display device with extremely high contrast. In particular, a display device with high current efficiency at low brightness can be realized.

[0296] The island-shaped organic compound layer 103 is formed by depositing an EL film and processing the EL film using a photolithography method.

[0297] The organic compound layer 103 is preferably provided so as to cover the top and side surfaces of the first electrode (pixel electrode) of the light-emitting device 130. This makes it easier to increase the aperture ratio of the display device 100 compared to a configuration in which the end of the organic compound layer 103 is located inside the end of the pixel electrode. Furthermore, covering the side surfaces of the pixel electrode of the light-emitting device 130 with the organic compound layer 103 can prevent the pixel electrode and the second electrode 102 from coming into contact with each other, thereby preventing short circuits in the light-emitting device 130.

[0298] In the display device of one embodiment of the present invention, the first electrode (pixel electrode) of the light-emitting device preferably has a stacked structure.

[0299] For example, a metal material can be used as the conductive layer 151. Specifically, metals such as aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), and neodymium (Nd), as well as alloys containing appropriate combinations of these metals, can also be used.

[0300] An oxide containing one or more selected from indium, tin, zinc, gallium, titanium, aluminum, and silicon can be used for the conductive layer 152. For example, it is preferable to use a conductive oxide containing one or more of indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, titanium oxide, indium zinc oxide containing gallium, indium zinc oxide containing aluminum, indium tin oxide containing silicon, and indium zinc oxide containing silicon. In particular, indium tin oxide containing silicon has a large work function, for example, a work function of 4.0 eV or more, and therefore can be suitably used for the conductive layer 152.

[0301] The conductive layer 151 may have a stacked structure of multiple layers containing different materials, and the conductive layer 152 may have a stacked structure of multiple layers containing different materials. In this case, the conductive layer 151 may include a layer containing a material that can be used for the conductive layer 152, such as a conductive oxide, or the conductive layer 152 may include a layer containing a material that can be used for the conductive layer 151, such as a metal material. For example, when the conductive layer 151 has a stacked structure of two or more layers, a layer in contact with the conductive layer 152 can be a layer containing a material that can be used for the conductive layer 152.

[0302] Next, an example of a method for manufacturing the display device 100 having the structure shown in FIG. 4A will be described with reference to FIGS.

[0303] [Fabrication Method Example 1] Thin films (insulating films, semiconductor films, conductive films, etc.) constituting a display device can be formed using a sputtering method, a chemical vapor deposition (CVD) method, a vacuum evaporation method, a pulsed laser deposition (PLD) method, an ALD method, or the like.

[0304] Furthermore, thin films (insulating films, semiconductor films, conductive films, etc.) constituting the display device can be formed by wet film formation methods such as spin coating, dipping, spray coating, inkjet, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, or knife coating.

[0305] Furthermore, when processing the thin films that constitute the display device, they can be processed using, for example, photolithography.

[0306] In photolithography, the light used for exposure may be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture of these. Other light sources that can be used include ultraviolet light, KrF laser light, and ArF laser light. Exposure may also be performed by immersion exposure technology. Extreme ultraviolet (EUV) light or X-rays may also be used as the light used for exposure. An electron beam may also be used instead of the light used for exposure.

[0307] The thin film can be etched by dry etching, wet etching, sandblasting, or the like.

[0308] 5A, an insulating layer 171 is formed on a substrate (not shown). Subsequently, conductive layers 172 and 179 are formed on the insulating layer 171, and an insulating layer 173 is formed on the insulating layer 171 so as to cover the conductive layers 172 and 179. Subsequently, an insulating layer 174 is formed on the insulating layer 173, and an insulating layer 175 is formed on the insulating layer 174.

[0309] The substrate may be a substrate having heat resistance sufficient to withstand at least a subsequent heat treatment, such as a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, an organic resin substrate, a single crystal semiconductor substrate made of silicon, silicon carbide, or the like, a polycrystalline semiconductor substrate, a compound semiconductor substrate made of silicon germanium, or the like, or an SOI substrate.

[0310] Subsequently, openings are formed in the insulating layers 175, 174, and 173, reaching the conductive layer 172. Subsequently, plugs 176 are formed so as to fill the openings.

[0311] Subsequently, a conductive film 151f, which will later become the conductive layers 151R, 151G, 151B, and 151C, is formed on the plugs 176 and the insulating layer 175. The conductive film 151f can be made of, for example, a metal material.

[0312] Next, a resist mask 191 is formed over the conductive film 151f. The resist mask 191 can be formed by applying a photosensitive material (photoresist) and then performing exposure and development.

[0313] 5B, the conductive film 151f is removed from the region that does not overlap with the resist mask 191. In this way, the conductive layer 151 is formed.

[0314] 5C, the resist mask 191 is removed by, for example, ashing using oxygen plasma.

[0315] Next, as shown in FIG. 5D , an insulating film 156f, which will later become insulating layers 156R, 156G, 156B, and 156C, is formed on the conductive layer 151R, the conductive layer 151G, the conductive layer 151B, the conductive layer 151C, and the insulating layer 175.

[0316] The insulating film 156f can be an inorganic insulating film such as an insulating oxide film, an insulating nitride film, an insulating oxynitride film, or an insulating nitride oxide film, for example, a silicon oxynitride film.

[0317] Subsequently, as shown in FIG. 5E, the insulating film 156f is processed to form insulating layers 156R, 156G, 156B, and 156C.

[0318] 6A , a conductive film 152f is formed over the conductive layer 151R, the conductive layer 151G, the conductive layer 151B, the conductive layer 151C, the insulating layer 156R, the insulating layer 156G, the insulating layer 156B, the insulating layer 156C, and the insulating layer 175. The conductive film 152f may be formed using, for example, a conductive oxide. The conductive film 152f may be a stacked film.

[0319] Subsequently, as shown in FIG. 6B, the conductive film 152f is processed to form conductive layers 152R, 152G, 152B, and 152C.

[0320] 6C, the EL film 103Rf is formed on the conductive layer 152R, the conductive layer 152G, the conductive layer 152B, and the insulating layer 175. Note that, as shown in FIG. 6C, the EL film 103Rf is not formed on the conductive layer 152C.

[0321] Subsequently, as shown in FIG. 6C, a sacrificial film 158Rf and a mask film 159Rf are formed.

[0322] By providing the sacrificial film 158Rf on the EL film 103Rf, damage to the EL film 103Rf during the manufacturing process of the display device can be reduced, and the reliability of the light-emitting device can be improved.

[0323] The sacrificial film 158Rf is made of a film that is highly resistant to the processing conditions of the EL film 103Rf, specifically, a film that has a large etching selectivity with respect to the EL film 103Rf.The mask film 159Rf is made of a film that has a large etching selectivity with respect to the sacrificial film 158Rf.

[0324] The sacrificial film 158Rf and the mask film 159Rf are formed at a temperature lower than the heat-resistant temperature of the EL film 103Rf. The substrate temperature when forming the sacrificial film 158Rf and the mask film 159Rf is typically 200° C. or lower, preferably 150° C. or lower, more preferably 120° C. or lower, more preferably 100° C. or lower, and even more preferably 80° C. or lower.

[0325] It is preferable to use a film that can be removed by wet etching for the sacrificial film 158Rf and the mask film 159Rf.

[0326] The sacrificial film 158Rf formed on and in contact with the EL film 103Rf is preferably formed using a formation method that causes less damage to the EL film 103Rf than the mask film 159Rf. For example, the ALD method or the vacuum deposition method is more preferable than the sputtering method.

[0327] The sacrificial film 158Rf and the mask film 159Rf may each be made of one or more of a metal film, an alloy film, a metal oxide film, a semiconductor film, an organic insulating film, an inorganic insulating film, or the like.

[0328] The sacrificial film 158Rf and the mask film 159Rf can be made of metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, and tantalum, or alloy materials containing such metal materials. It is particularly preferable to use a low-melting-point material such as aluminum or silver. Using a metal material capable of blocking ultraviolet rays for one or both of the sacrificial film 158Rf and the mask film 159Rf is preferable because it can prevent ultraviolet rays from being irradiated onto the EL film 103Rf and suppress deterioration of the EL film 103Rf.

[0329] Furthermore, for the sacrificial film 158Rf and the mask film 159Rf, metal oxides such as In—Ga—Zn oxide, indium oxide, In—Zn oxide, In—Sn oxide, indium titanium oxide (In—Ti oxide), indium tin zinc oxide (In—Sn—Zn oxide), indium titanium zinc oxide (In—Ti—Zn oxide), indium gallium tin zinc oxide (In—Ga—Sn—Zn oxide), and indium tin oxide containing silicon can be used, respectively.

[0330] In addition, in the above metal oxide, an element M (wherein M is one or more elements selected from aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium) may be used instead of gallium.

[0331] The sacrificial film 158Rf and the mask film 159Rf are preferably made of a semiconductor material such as silicon or germanium, which has a high affinity with the semiconductor manufacturing process. Alternatively, compounds containing the semiconductor materials may be used.

[0332] The sacrificial film 158Rf and the mask film 159Rf may be made of various inorganic insulating films, and an oxide insulating film is particularly preferable because it has higher adhesion to the EL film 103Rf than a nitride insulating film.

[0333] 6C, a resist mask 190R is formed. The resist mask 190R can be formed by applying a photosensitive material (photoresist) and then performing exposure and development.

[0334] The resist mask 190R is provided in a position overlapping with the conductive layer 152R. The resist mask 190R is preferably provided also in a position overlapping with the conductive layer 152C. This can prevent the conductive layer 152C from being damaged during the manufacturing process of the display device.

[0335] 6D , a resist mask 190R is used to remove a portion of the mask film 159Rf to form a mask layer 159R. The mask layer 159R remains on the conductive layer 152R and the conductive layer 152C. The resist mask 190R is then removed. The mask layer 159R is then used as a mask (also referred to as a hard mask) to remove a portion of the sacrificial film 158Rf to form a sacrificial layer 158R.

[0336] By using the wet etching method, damage to the EL film 103Rf during processing of the sacrificial film 158Rf and the mask film 159Rf can be reduced compared to when using the dry etching method. When using the wet etching method, it is preferable to use a chemical solution using, for example, a developer, a tetramethylammonium hydroxide (TMAH) aqueous solution, dilute hydrofluoric acid, oxalic acid, phosphoric acid, acetic acid, nitric acid, or a mixture thereof.

[0337] Furthermore, when dry etching is used to process the sacrificial film 158Rf, deterioration of the EL film 103Rf can be suppressed by not using a gas containing oxygen as the etching gas.

[0338] The resist mask 190R can be removed in the same manner as the resist mask 191.

[0339] 6D, the EL film 103Rf is processed to form the organic compound layer 103R. For example, the mask layer 159R and the sacrificial layer 158R are used as a hard mask to remove a portion of the EL film 103Rf, thereby forming the organic compound layer 103R.

[0340] 6D, a laminated structure of the organic compound layer 103R, the sacrificial layer 158R, and the mask layer 159R remains on the conductive layer 152R, and the conductive layers 152G and 152B are exposed.

[0341] The EL film 103Rf is preferably processed by anisotropic etching, particularly anisotropic dry etching, or wet etching may be used.

[0342] When dry etching is used, deterioration of the EL film 103Rf can be suppressed by not using a gas containing oxygen as the etching gas.

[0343] Alternatively, a gas containing oxygen may be used as the etching gas. By using an etching gas containing oxygen, the etching rate can be increased. Therefore, etching can be performed under low power conditions while maintaining a sufficiently high etching rate. This can reduce damage to the EL film 103Rf. Furthermore, problems such as adhesion of reaction products that occur during etching can be reduced.

[0344] When dry etching is used, for example, H ２ , C.F. ４ , C ４ F ８ , SF ６ , CHF ３ , Cl ２ , H ２ O, BCl ３ It is preferable to use a gas containing one or more of Group 18 elements such as He and Ar as the etching gas. Alternatively, it is preferable to use a gas containing one or more of these elements and oxygen as the etching gas. Alternatively, oxygen gas may be used as the etching gas.

[0345] Subsequently, as shown in FIG. 7A, an EL film 103Gf, which will later become the organic compound layer 103G, is formed.

[0346] The EL film 103Gf can be formed by the same method as that used to form the EL film 103Rf, and can have the same structure as the EL film 103Rf.

[0347] Next, a sacrificial film 158Gf and a mask film 159Gf are formed in this order. Then, a resist mask 190G is formed in a position overlapping the conductive layer 152G. The materials and forming methods of the sacrificial film 158Gf and the mask film 159Gf are the same as those applicable to the sacrificial film 158Rf and the mask film 159Rf. The materials and forming methods of the resist mask 190G are the same as those applicable to the resist mask 190R.

[0348] 7B, a resist mask 190G is used to remove a portion of the mask film 159Gf to form a mask layer 159G. The mask layer 159G remains on the conductive layer 152G. The resist mask 190G is then removed. The mask layer 159G is then used as a mask to remove a portion of the sacrificial film 158Gf to form a sacrificial layer 158G. The EL film 103Gf is then processed to form an organic compound layer 103G.

[0349] 7C, the EL film 103Bf is formed. The EL film 103Bf can be formed by the same method as that used to form the EL film 103Rf. The EL film 103Bf can also have the same structure as the EL film 103Rf.

[0350] 7C, a sacrificial film 158Bf and a mask film 159Bf are formed in this order. Then, a resist mask 190B is formed in a position overlapping the conductive layer 152B. The materials and forming methods for the sacrificial film 158Bf and the mask film 159Bf are the same as those applicable to the sacrificial film 158Rf and the mask film 159Rf. The materials and forming methods for the resist mask 190B are the same as those applicable to the resist mask 190R.

[0351] 7D, a resist mask 190B is used to remove a portion of the mask film 159Bf to form a mask layer 159B. The mask layer 159B remains on the conductive layer 152B. The resist mask 190B is then removed. The mask layer 159B is then used as a mask to remove a portion of the sacrificial film 158Bf to form a sacrificial layer 158B. The EL film 103Bf is then processed to form the organic compound layer 103B. For example, the mask layer 159B and the sacrificial layer 158B are used as hard masks to remove a portion of the EL film 103Bf to form the organic compound layer 103B.

[0352] As a result, a laminated structure of the organic compound layer 103B, the sacrificial layer 158B, and the mask layer 159B remains on the conductive layer 152B, and the mask layers 159R and 159G are exposed.

[0353] It is preferable that the side surfaces of the organic compound layers 103R, 103G, and 103B are perpendicular or substantially perpendicular to the surface on which they are formed. For example, it is preferable that the angle formed between the surface on which they are formed and these side surfaces be 60 degrees or more and 90 degrees or less.

[0354] As described above, the distance between adjacent pairs of the organic compound layers 103R, 103G, and 103B formed using photolithography can be narrowed to 8 μm or less, 5 μm or less, 3 μm or less, 2 μm or less, or 1 μm or less. Here, the distance can be defined, for example, as the distance between the opposing ends of adjacent pairs of the organic compound layers 103R, 103G, and 103B. By narrowing the distance between the island-shaped organic compound layers in this manner, a display device with high definition and a large aperture ratio can be provided. Furthermore, the distance between the first electrodes of adjacent light-emitting devices can also be narrowed, for example, to 10 μm or less, 8 μm or less, 5 μm or less, 3 μm or less, 2 μm or less, or 1 μm or less. For example, by using an exposure device for LSIs, the spacing can be narrowed to 500 nm or less, 200 nm or less, 100 nm or less, or even 50 nm or less.

[0355] Subsequently, as shown in FIG. 8A, it is preferable to remove the mask layers 159R, 159G, and 159B.

[0356] The mask layer removal process can be performed using the same method as the mask film processing process. In particular, by using a wet etching method, damage to the organic compound layer 103 during the mask layer removal can be reduced compared to when a dry etching method is used.

[0357] The mask layer may also be removed by dissolving it in a solvent such as water or alcohol, such as ethyl alcohol, methyl alcohol, isopropyl alcohol (IPA), or glycerin.

[0358] After removing the mask layer, a drying treatment may be performed to remove water adsorbed on the surface. For example, a heat treatment can be performed in an inert gas atmosphere or a reduced pressure atmosphere. The heat treatment can be performed at a substrate temperature of 50°C or higher and 200°C or lower, preferably 60°C or higher and 150°C or lower, and more preferably 70°C or higher and 120°C or lower. A reduced pressure atmosphere is preferred because it allows drying at a lower temperature.

[0359] Subsequently, as shown in FIG. 8B, an inorganic insulating film 125f is formed.

[0360] Subsequently, as shown in FIG. 8C, an insulating film 127f, which will later become the insulating layer 127, is formed on the inorganic insulating film 125f.

[0361] The substrate temperature when forming the inorganic insulating film 125f and the insulating film 127f is preferably 60°C or higher, 80°C or higher, 100°C or higher, or 120°C or higher, and 200°C or lower, 180°C or lower, 160°C or lower, 150°C or lower, or 140°C or lower, respectively.

[0362] As the inorganic insulating film 125f, it is preferable to form an insulating film having a thickness of 3 nm or more, 5 nm or more, or 10 nm or more, and 200 nm or less, 150 nm or less, 100 nm or less, or 50 nm or less within the above substrate temperature range.

[0363] The inorganic insulating film 125f is preferably formed by, for example, the ALD method. The ALD method is preferable because it can reduce film formation damage and form a film with high coverage. The inorganic insulating film 125f is preferably formed as an aluminum oxide film by, for example, the ALD method.

[0364] The insulating film 127f is preferably formed by the wet film formation method described above. The insulating film 127f is preferably formed by, for example, spin coating using a photosensitive material, more specifically, using a photosensitive resin composition containing an acrylic resin.

[0365] Subsequently, exposure is performed to expose a portion of the insulating film 127f to visible light or ultraviolet light. The insulating layer 127f is formed in a region sandwiched between any two of the conductive layers 152R, 152G, and 152B, and around the conductive layer 152C.

[0366] The width of the insulating layer 127 to be formed later can be controlled by the exposed region of the insulating film 127f. In this embodiment mode, the insulating layer 127 is processed to have a portion overlapping with the top surface of the conductive layer 151.

[0367] The light used for exposure preferably contains i-line (wavelength 365 nm), and may contain at least one of g-line (wavelength 436 nm) and h-line (wavelength 405 nm).

[0368] Subsequently, as shown in FIG. 9A, development is performed to remove the exposed area of ​​the insulating film 127f, thereby forming an insulating layer 127a.

[0369] 9B , an etching process is performed using the insulating layer 127a as a mask to remove a portion of the inorganic insulating film 125f and thin the film thickness of a portion of the sacrificial layers 158R, 158G, and 158B. This results in the formation of the inorganic insulating layer 125 below the insulating layer 127a. Furthermore, the surfaces of the thin portions of the sacrificial layers 158R, 158G, and 158B are exposed. Hereinafter, the etching process using the insulating layer 127a as a mask may be referred to as the first etching process.

[0370] The first etching treatment can be performed by dry etching or wet etching. Note that it is preferable to form the inorganic insulating film 125f using the same material as the sacrificial layers 158R, 158G, and 158B because the first etching treatment can be performed all at once.

[0371] When dry etching is performed, it is preferable to use a chlorine-based gas. ２ , BCl ３ , SiCl ４ , and CCl ４ The chlorine-based gas may be added with oxygen gas, hydrogen gas, helium gas, argon gas, or the like, either alone or in combination of two or more gases. By using dry etching, thin regions of the sacrificial layers 158R, 158G, and 158B can be formed with good in-plane uniformity.

[0372] The dry etching apparatus may be a dry etching apparatus having a high-density plasma source, such as an inductively coupled plasma (ICP) etching apparatus, or a capacitively coupled plasma (CCP) etching apparatus having parallel plate electrodes.

[0373] The first etching treatment is preferably performed by wet etching. By using the wet etching method, damage to the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B can be reduced compared to when using the dry etching method. For example, the wet etching can be performed using an alkaline solution or an acid solution.

[0374] In the first etching process, it is preferable to stop the etching process when the film thicknesses of the sacrificial layers 158R, 158G, and 158B have become thin without completely removing them. In this way, by leaving the corresponding sacrificial layers 158R, 158G, and 158B on the organic compound layers 103R, 103G, and 103B, it is possible to prevent the organic compound layers 103R, 103G, and 103B from being damaged in subsequent processes.

[0375] Subsequently, the entire substrate is exposed to visible light or ultraviolet light, and the insulating layer 127a is preferably irradiated with the energy density of the exposure. ２ Larger, 800 mJ / cm ２ It is preferable that the dose is 0 mJ / cm or less. ２ Greater than 500 mJ / cm ２ It is more preferable to perform the following. By performing such exposure after development, the transparency of the insulating layer 127a can be improved in some cases. Furthermore, the substrate temperature required for heat treatment to transform the insulating layer 127a into a tapered shape in a later step can be reduced in some cases.

[0376] Here, the presence of a barrier insulating layer against oxygen (e.g., an aluminum oxide film, etc.) as the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B can reduce the diffusion of oxygen into the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B.

[0377] Next, heat treatment (also referred to as post-baking) is performed. By performing the heat treatment, the insulating layer 127a can be transformed into an insulating layer 127 having tapered side surfaces ( FIG. 9C ). The heat treatment is performed at a temperature lower than the heat resistance temperature of the organic compound layer. The heat treatment can be performed at a substrate temperature of 50° C. to 200° C., preferably 60° C. to 150° C., more preferably 70° C. to 130° C. The heating atmosphere may be an air atmosphere or an inert gas atmosphere. The heating atmosphere may be an atmospheric pressure atmosphere or a reduced-pressure atmosphere. This can improve the adhesion between the insulating layer 127 and the inorganic insulating layer 125 and also improve the corrosion resistance of the insulating layer 127.

[0378] By leaving the sacrificial layers 158R, 158G, and 158B in a thinner state without completely removing them in the first etching treatment, the organic compound layers 103R, 103G, and 103B can be prevented from being damaged and deteriorated in the heat treatment, thereby improving the reliability of the light-emitting device.

[0379] 10A , an etching process is performed using the insulating layer 127 as a mask to remove portions of the sacrificial layers 158R, 158G, and 158B. As a result, openings are formed in the sacrificial layers 158R, 158G, and 158B, respectively, and the top surfaces of the organic compound layers 103R, 103G, 103B, and the conductive layer 152C are exposed. Note that, hereinafter, this etching process may be referred to as a second etching process.

[0380] The end of the inorganic insulating layer 125 is covered with the insulating layer 127. Also, Fig. 10A shows an example in which a part of the end of the sacrificial layer 158G (specifically, the tapered portion formed by the first etching process) is covered with the insulating layer 127, and the tapered portion formed by the second etching process is exposed.

[0381] The second etching process is performed by wet etching. By using the wet etching method, damage to the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B can be reduced compared to when using the dry etching method. The wet etching can be performed using, for example, an alkaline solution or an acidic solution.

[0382] 10B , a second electrode (common electrode) 102 is formed on the organic compound layer 103R, the organic compound layer 103G, the organic compound layer 103B, the conductive layer 152C, and the insulating layer 127. The second electrode (common electrode) 102 can be formed by a method such as sputtering or vacuum deposition.

[0383] 10C, a protective layer 131 is formed on the second electrode (common electrode) 102. The protective layer 131 can be formed by a method such as a vacuum deposition method, a sputtering method, a CVD method, or an ALD method.

[0384] Subsequently, the substrate 120 is attached over the protective layer 131 using the resin layer 122, whereby a display device can be manufactured. As described above, in the method for manufacturing a display device of one embodiment of the present invention, the insulating layer 156 is provided so as to have a region overlapping with a side surface of the conductive layer 151, and the conductive layer 152 is formed so as to cover the conductive layer 151 and the insulating layer 156. This can increase the yield of the display device and suppress the occurrence of defects.

[0385] As described above, in the manufacturing method of the display device according to this embodiment, the island-shaped organic compound layers 103R, 103G, and 103B are formed not using a fine metal mask but by forming a film over the entire surface and then processing it by photolithography. This allows the island-shaped layers to be formed with a uniform thickness. Furthermore, a high-resolution display device or a display device with a high aperture ratio can be realized. Even if the resolution or aperture ratio is high and the distance between subpixels is extremely short, the organic compound layers 103R, 103G, and 103B can be prevented from contacting each other in adjacent subpixels. Therefore, leakage current between subpixels can be suppressed. This prevents crosstalk and realizes a display device with extremely high contrast. Furthermore, a display device with excellent characteristics can be provided, even in a display device having tandem light-emitting devices manufactured using photolithography.

[0386] Embodiment 5 In this embodiment, a display device according to one embodiment of the present invention will be described.

[0387] The display device of the present embodiment can be a high-definition display device, and can therefore be used, for example, as a display unit for a wristwatch-type or bracelet-type information terminal (wearable device), as well as a display unit for a wearable device that can be worn on the head, such as a head-mounted display (HMD) for VR, or a glasses-type device for AR.

[0388] The display device of the present embodiment can be a high-resolution display device or a large-sized display device. Therefore, the display device of the present embodiment can be used in electronic devices having relatively large screens, such as television devices, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as in the display units of digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and sound reproducing devices.

[0389] 11A shows a perspective view of a display module 280. The display module 280 includes a display device 100A and an FPC 290. Note that the display device included in the display module 280 is not limited to the display device 100A, and may be any of the display devices 100B to 100E described below.

[0390] The display module 280 has a substrate 291 and a substrate 292. The display module 280 has a display portion 281. The display portion 281 is a region that displays an image in the display module 280, and is a region where light from each pixel provided in a pixel portion 284 (described later) can be viewed.

[0391] 11B is a perspective view schematically showing the configuration on the substrate 291 side. A circuit portion 282, a pixel circuit portion 283 on the circuit portion 282, and a pixel portion 284 on the pixel circuit portion 283 are stacked on the substrate 291. A terminal portion 285 for connecting to the FPC 290 is provided in a portion of the substrate 291 that does not overlap with the pixel portion 284. The terminal portion 285 and the circuit portion 282 are electrically connected by a wiring portion 286 composed of a plurality of wirings.

[0392] The pixel portion 284 has a plurality of periodically arranged pixels 284a. An enlarged view of one pixel 284a is shown on the right side of Fig. 11B. The various structures described in the above embodiments can be applied to the pixel 284a.

[0393] The pixel circuit section 283 has a plurality of pixel circuits 283a arranged periodically.

[0394] One pixel circuit 283a is a circuit that controls the driving of a plurality of elements included in one pixel 284a.

[0395] The circuit portion 282 includes a circuit for driving each pixel circuit 283 a of the pixel circuit portion 283. For example, the circuit portion 282 preferably includes one or both of a gate line driver circuit and a source line driver circuit. In addition, the circuit portion 282 may include at least one of an arithmetic circuit, a memory circuit, a power supply circuit, and the like.

[0396] The FPC 290 functions as wiring for supplying a video signal, a power supply potential, or the like from the outside to the circuit portion 282. An IC may be mounted on the FPC 290.

[0397] The display module 280 can be configured such that one or both of the pixel circuit unit 283 and the circuit unit 282 are stacked below the pixel unit 284, thereby making it possible to extremely increase the aperture ratio (effective display area ratio) of the display unit 281.

[0398] Because such a display module 280 has extremely high resolution, it can be suitably used in VR devices such as HMDs or eyeglass-type AR devices. For example, even in a configuration in which the display unit of the display module 280 is viewed through lenses, the display module 280 has an extremely high-resolution display unit 281, so that even if the display unit is enlarged with the lens, the pixels are not visible, allowing for a highly immersive display. Furthermore, the display module 280 is not limited to this, and can be suitably used in electronic devices having relatively small display units.

[0399] Display Device 100A The display device 100A shown in FIG. 12A includes a substrate 301, a light-emitting device 130R, a light-emitting device 130G, a light-emitting device 130B, a capacitor 240, and a transistor 310.

[0400] The substrate 301 corresponds to the substrate 291 in FIGS. 11A and 11B . The transistor 310 is a transistor having a channel formation region in the substrate 301. The substrate 301 can be, for example, a semiconductor substrate such as a single crystal silicon substrate. The transistor 310 includes a part of the substrate 301, a conductive layer 311, a low-resistance region 312, an insulating layer 313, and an insulating layer 314. The conductive layer 311 functions as a gate electrode. The insulating layer 313 is located between the substrate 301 and the conductive layer 311 and functions as a gate insulating layer. The low-resistance region 312 is a region in which the substrate 301 is doped with impurities and functions as a source or drain. The insulating layer 314 is provided to cover a side surface of the conductive layer 311.

[0401] An element isolation layer 315 is provided between two adjacent transistors 310 so as to be embedded in the substrate 301 .

[0402] In addition, an insulating layer 261 is provided to cover the transistor 310 , and a capacitor 240 is provided over the insulating layer 261 .

[0403] The capacitor 240 has a conductive layer 241, a conductive layer 245, and an insulating layer 243 located therebetween. The conductive layer 241 functions as one electrode of the capacitor 240, the conductive layer 245 functions as the other electrode of the capacitor 240, and the insulating layer 243 functions as a dielectric of the capacitor 240.

[0404] The conductive layer 241 is provided over the insulating layer 261 and is buried in the insulating layer 254. The conductive layer 241 is electrically connected to one of the source and the drain of the transistor 310 by a plug 271 buried in the insulating layer 261. The insulating layer 243 is provided to cover the conductive layer 241. The conductive layer 245 is provided in a region overlapping with the conductive layer 241 with the insulating layer 243 interposed therebetween.

[0405] An insulating layer 255 is provided to cover the capacitor 240, an insulating layer 174 is provided on the insulating layer 255, and an insulating layer 175 is provided on the insulating layer 174. Light-emitting device 130R, light-emitting device 130G, and light-emitting device 130B are provided on the insulating layer 175. An insulator is provided in the region between adjacent light-emitting devices.

[0406] An insulating layer 156R is provided to have a region overlapping with a side surface of the conductive layer 151R, an insulating layer 156G is provided to have a region overlapping with a side surface of the conductive layer 151G, and an insulating layer 156B is provided to have a region overlapping with a side surface of the conductive layer 151B. Furthermore, a conductive layer 152R is provided to cover the conductive layer 151R and the insulating layer 156R, a conductive layer 152G is provided to cover the conductive layer 151G and the insulating layer 156G, and a conductive layer 152B is provided to cover the conductive layer 151B and the insulating layer 156B. A sacrificial layer 158R is located on the organic compound layer 103R, a sacrificial layer 158G is located on the organic compound layer 103G, and a sacrificial layer 158B is located on the organic compound layer 103B.

[0407] The conductive layer 151R, the conductive layer 151G, and the conductive layer 151B are electrically connected to one of the source and the drain of the transistor 310 by an insulating layer 243, an insulating layer 255, an insulating layer 174, a plug 256 embedded in the insulating layer 175, a conductive layer 241 embedded in the insulating layer 254, and a plug 271 embedded in the insulating layer 261. Various conductive materials can be used for the plugs.

[0408] Furthermore, a protective layer 131 is provided on the light-emitting devices 130R, 130G, and 130B. A substrate 120 is bonded to the protective layer 131 via a resin layer 122. For details of the components from the light-emitting device 130 to the substrate 120, refer to the fourth embodiment. The substrate 120 corresponds to the substrate 292 in FIG. 11A .

[0409] Fig. 12B is a modified example of the display device 100A shown in Fig. 12A. The display device shown in Fig. 12B has a colored layer 132R, a colored layer 132G, and a colored layer 132B, and the light-emitting device 130 has an area where it overlaps with one of the colored layers 132R, 132G, and 132B. In the display device shown in Fig. 12B, the light-emitting device 130 can emit, for example, white light. Furthermore, for example, the colored layer 132R can transmit red light, the colored layer 132G can transmit green light, and the colored layer 132B can transmit blue light.

[0410] [Display Device 100B] FIG. 13 shows a perspective view of the display device 100B, and FIG. 14 shows a cross-sectional view of the display device 100C.

[0411] The display device 100B has a configuration in which a substrate 352 and a substrate 351 are bonded together. In Fig. 13, the substrate 352 is indicated by a dashed line.

[0412] The display device 100B includes a pixel portion 177, a connection portion 140, a circuit 356, wiring 355, and the like. Fig. 13 shows an example in which an IC 354 and an FPC 353 are mounted on the display device 100B. Therefore, the configuration shown in Fig. 13 can also be called a display module including the display device 100B, an IC (integrated circuit), and an FPC. Here, a display device in which a connector such as an FPC is attached to a substrate or a display device in which an IC is mounted on the substrate is called a display module.

[0413] The connection portion 140 is provided outside the pixel portion 177. There may be one or more connection portions 140. The connection portion 140 electrically connects the common electrode of the light-emitting device and the conductive layer, and can supply a potential to the common electrode.

[0414] The circuit 356 can be, for example, a scanning line driver circuit.

[0415] The wiring 355 has a function of supplying signals and power to the pixel portion 177 and the circuit 356. The signals and power are input to the wiring 355 from the outside via the FPC 353 or from the IC 354.

[0416] 13 shows an example in which an IC 354 is provided on a substrate 351 by a chip-on-glass (COG) method, a chip-on-film (COF) method, or the like. For example, an IC having a scanning line driver circuit or a signal line driver circuit can be used as the IC 354. Note that the display device 100B and the display module may not include an IC. Alternatively, the IC may be mounted on an FPC by a COF method, for example.

[0417] Figure 14 shows an example of a cross section of the display device 100B in Figure 13, in which a portion of the region including the FPC 353, a portion of the circuit 356, a portion of the pixel portion 177, a portion of the connection portion 140, and a portion of the region including the end portion are cut away, as display device 100C.

[0418] [Display Device 100C] The display device 100C shown in FIG. 14 has, between a substrate 351 and a substrate 352, a transistor 201, a transistor 205, a light-emitting device 130R that emits red light, a light-emitting device 130G that emits green light, and a light-emitting device 130B that emits blue light, etc.

[0419] For details of the light emitting device 130R, the light emitting device 130G, and the light emitting device 130B, refer to the fourth embodiment.

[0420] Light-emitting device 130R has conductive layer 224R, conductive layer 151R on conductive layer 224R, and conductive layer 152R on conductive layer 151R. Light-emitting device 130G has conductive layer 224G, conductive layer 151G on conductive layer 224G, and conductive layer 152G on conductive layer 151G. Light-emitting device 130B has conductive layer 224B, conductive layer 151B on conductive layer 224B, and conductive layer 152B on conductive layer 151B.

[0421] The conductive layer 224R is connected to the conductive layer 222b of the transistor 205 through an opening provided in the insulating layer 214. An end of the conductive layer 151R is located outside an end of the conductive layer 224R. An insulating layer 156R is provided to have a region in contact with the side surface of the conductive layer 151R, and a conductive layer 152R is provided to cover the conductive layer 151R and the insulating layer 156R.

[0422] Conductive layer 224G, conductive layer 151G, conductive layer 152G, and insulating layer 156G in light-emitting device 130G, and conductive layer 224B, conductive layer 151B, conductive layer 152B, and insulating layer 156B in light-emitting device 130B are similar to conductive layer 224R, conductive layer 151R, conductive layer 152R, and insulating layer 156R in light-emitting device 130R, and therefore detailed description thereof will be omitted.

[0423] Recesses are formed in the conductive layers 224R, 224G, and 224B so as to cover the openings provided in the insulating layer 214. A layer 128 is buried in the recesses.

[0424] The layer 128 has a function of filling in recesses of the conductive layer 224R, the conductive layer 224G, and the conductive layer 224B and planarizing the surface. Conductive layers 151R, 151G, and 151B, which are electrically connected to the conductive layer 224R, the conductive layer 224G, and the conductive layer 224B, are provided on the conductive layer 224R, the conductive layer 224G, and the conductive layer 224B and the layer 128. Therefore, the regions overlapping with the recesses of the conductive layer 224R, the conductive layer 224G, and the conductive layer 224B can also be used as light-emitting regions, thereby increasing the aperture ratio of the pixel.

[0425] The layer 128 may be an insulating layer or a conductive layer. Various inorganic insulating materials, organic insulating materials, and conductive materials can be used as appropriate for the layer 128. In particular, the layer 128 is preferably formed using an insulating material, and more preferably using an organic insulating material. For example, the organic insulating material that can be used for the insulating layer 127 described above can be used for the layer 128.

[0426] A protective layer 131 is provided on the light-emitting device 130R, the light-emitting device 130G, and the light-emitting device 130B. The protective layer 131 and the substrate 352 are bonded via an adhesive layer 142. A light-shielding layer 157 is provided on the substrate 352. A solid sealing structure, a hollow sealing structure, or the like can be applied to seal the light-emitting device 130. In FIG. 14 , the space between the substrate 352 and the substrate 351 is filled with the adhesive layer 142, and a solid sealing structure is applied. Alternatively, the space may be filled with an inert gas (nitrogen, argon, etc.), and a hollow sealing structure may be applied. In this case, the adhesive layer 142 may be provided so as not to overlap with the light-emitting device. Alternatively, the space may be filled with a resin different from the frame-shaped adhesive layer 142.

[0427] 14 shows an example in which the connection portion 140 has a conductive layer 224C obtained by processing the same conductive film as the conductive layers 224R, 224G, and 224B, a conductive layer 151C obtained by processing the same conductive film as the conductive layers 151R, 151G, and 151B, and a conductive layer 152C obtained by processing the same conductive film as the conductive layers 152R, 152G, and 152B. Also, FIG. 14 shows an example in which an insulating layer 156C is provided so as to have a region overlapping with a side surface of the conductive layer 151C.

[0428] The display device 100C is a top-emission type. Light emitted by the light-emitting device is emitted toward the substrate 352. The substrate 352 is preferably made of a material that is highly transparent to visible light. The pixel electrode contains a material that reflects visible light, and the counter electrode (common electrode 155) contains a material that transmits visible light.

[0429] An insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are provided over the substrate 351 in this order. A part of the insulating layer 211 functions as a gate insulating layer for each transistor. A part of the insulating layer 213 functions as a gate insulating layer for each transistor. The insulating layer 215 is provided to cover the transistor. The insulating layer 214 is provided to cover the transistor and functions as a planarization layer. Note that the number of gate insulating layers and the number of insulating layers covering the transistors are not limited, and each may be a single layer or two or more layers.

[0430] The insulating layers 211, 213, and 215 are each preferably formed using an inorganic insulating film.

[0431] The insulating layer 214 that functions as a planarizing layer is preferably an organic insulating layer.

[0432] The transistor 201 and the transistor 205 each include a conductive layer 221 functioning as a gate, an insulating layer 211 functioning as a gate insulating layer, a conductive layer 222a and a conductive layer 222b functioning as a source and a drain, a semiconductor layer 231, an insulating layer 213 functioning as a gate insulating layer, and a conductive layer 223 functioning as a gate.

[0433] A connection portion 204 is provided in a region of the substrate 351 where the substrate 352 does not overlap. In the connection portion 204, a source electrode or a drain electrode of the transistor 201 is electrically connected to the FPC 353 through a conductive layer 166 and a connection layer 242. The conductive layer 166 has an example of a stacked structure including a conductive film obtained by processing the same conductive film as the conductive layers 224R, 224G, and 224B, a conductive film obtained by processing the same conductive film as the conductive layers 151R, 151G, and 151B, and a conductive film obtained by processing the same conductive film as the conductive layers 152R, 152G, and 152B. The conductive layer 166 is exposed on the top surface of the connection portion 204. This allows the connection portion 204 and the FPC 353 to be electrically connected via the connection layer 242.

[0434] It is preferable to provide a light-shielding layer 157 on the surface of the substrate 352 facing the substrate 351. The light-shielding layer 157 can be provided between adjacent light-emitting devices, on the connection section 140, on the circuit 356, etc. In addition, various optical members can be arranged on the outside of the substrate 352.

[0435] The materials that can be used for the substrate 120 can be used for the substrate 351 and the substrate 352 .

[0436] The adhesive layer 142 can be made of a material that can be used for the resin layer 122 .

[0437] The connection layer 242 may be an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), or the like.

[0438] [Display Device 100D] The display device 100D shown in FIG. 15 differs from the display device 100C shown in FIG. 14 mainly in that it is a bottom-emission display device.

[0439] Light emitted from the light-emitting device is emitted toward the substrate 351. A material that is highly transparent to visible light is preferably used for the substrate 351. On the other hand, the light-transmitting property of the material used for the substrate 352 does not matter.

[0440] A light-shielding layer 317 is preferably formed between the substrate 351 and the transistor 201 and between the substrate 351 and the transistor 205. In the example shown in FIG. 15, the light-shielding layer 317 is provided over the substrate 351, the insulating layer 153 is provided over the light-shielding layer 317, and the transistors 201, 205, and the like are provided over the insulating layer 153.

[0441] Light emitting device 130R includes conductive layer 112R, conductive layer 126R on conductive layer 112R, and conductive layer 129R on conductive layer 126R.

[0442] Light emitting device 130B includes conductive layer 112B, conductive layer 126B on conductive layer 112B, and conductive layer 129B on conductive layer 126B.

[0443] The conductive layers 112R, 112B, 126R, 126B, 129R, and 129B are each formed using a material that is highly transparent to visible light. The second electrode 102 is preferably formed using a material that reflects visible light.

[0444] Although the light emitting device 130G is not shown in FIG. 15, the light emitting device 130G is also provided.

[0445] Although FIG. 15 and other figures show an example in which the top surface of the layer 128 has a flat portion, the shape of the layer 128 is not particularly limited.

[0446] [Display Device 100D2] The display device 100D2 shown in Fig. 16 is an example of a bottom-emission type display device that differs from the display device 100D shown in Fig. 15. The display device 100D2 differs from the display device 100D in that it has an organic resin layer 180. Note that in the figure, the reference numerals of the same components as those in Fig. 15 may be omitted, and the description in Fig. 15 can be referred to for details.

[0447] 16B shows a top view layout of a pixel 178 (pixel 178a and pixel 178b) having subpixels 110 (subpixels 110R, 110G, 110B, and 110W), and Fig. 16C shows a top view of the organic resin layer 180 in a region where the subpixels 110R and 110G of the pixel 178 are formed. Note that the distance between the light-shielding layers 317 is 110Rw in the light-emitting region of the subpixel 110R.

[0448] As shown in FIG. 16A , organic resin layer 180 is provided on insulating layer 214. As shown in the region surrounded by the dashed dotted line in FIG. 16A and in FIG. 16C , organic resin layer 180 has curved recesses 181 (recesses 181 a and 181 b) at least in the region where the subpixels are formed. Note that recesses 181 may be provided outside the light-emitting region, such as recess 181 c. Providing recess 181 c refracts light emitted in the region overlapping with light-shielding layer 317 or light traveling to the region overlapping with light-shielding layer 317, allowing it to be extracted from the light-emitting region, thereby improving light-emitting efficiency.

[0449] A plurality of recesses 181 may be formed in a matrix. Recesses 181a and 181b may be provided in contact with each other, or may have a flat surface therebetween.

[0450] 16, the recess has a hexagonal top surface shape (FIG. 16C) and a semicircular cross-sectional shape (FIG. 16A), but may have other shapes as needed. For example, the recess may have a polygonal top surface shape such as a triangle, a quadrangle (including a rectangle and a square), a pentagon, or any other polygon with rounded corners, an ellipse, or a circle.

[0451] An insulating layer containing an organic material can be used as the organic resin layer 180. For example, acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimideamide resin, silicone resin, siloxane resin, benzocyclobutene resin, phenolic resin, precursors of these resins, etc. can be used as the organic resin layer 180. Alternatively, organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin can be used as the organic resin layer 180.

[0452] Furthermore, a photosensitive resin can be used as the organic resin layer 180. A photoresist can be used as the photosensitive resin. The photosensitive resin can be a positive-type material or a negative-type material.

[0453] The organic resin layer 180 may contain a material that absorbs visible light. For example, the organic resin layer 180 itself may be made of a material that absorbs visible light, or the organic resin layer 180 may contain a pigment that absorbs visible light. For example, the organic resin layer 180 may be made of a resin that can be used as a color filter that transmits red, blue, or green light and absorbs other light, or a resin that contains carbon black as a pigment and functions as a black matrix.

[0454] In addition, the first electrode 101 (the first electrode 101R and the first electrode 101W) is provided on the organic resin layer 180, and the organic compound layer 103 is provided on the first electrode 101. Ends of the first electrode 101 and the organic compound layer 103 may be covered with an insulating layer 127.

[0455] Furthermore, the first electrode 101 formed on the organic resin layer 180 has a recess similar to the recess of the organic resin layer 180. Furthermore, the organic compound layer 103 formed on the first electrode 101 has a recess similar to the recess of the first electrode 101. Furthermore, the common layer 104 formed on the organic compound layer 103 has a recess similar to the recess of the organic compound layer 103. Furthermore, the second electrode 102 formed on the common layer 104 has a recess similar to the recess of the common layer 104. That is, the recesses of the organic resin layer 180, the first electrode 101, the organic compound layer 103, the common layer 104, and the second electrode 102 have a structure in which they overlap one another.

[0456] In addition, a common layer 104 is provided over the organic compound layer 103 and the insulating layer 127, and a second electrode 102 is provided over the common layer 104. A protective layer 131 is provided over the second electrode 102, and the second electrode 102 is bonded to a substrate 352 via an adhesive layer 142.

[0457] Although the light emitting device 130G and the light emitting device 130B are not shown in FIG. 16, the light emitting device 130G and the light emitting device 130B are also provided.

[0458] The light-emitting device of one embodiment of the present invention having the organic resin layer 180 as described above contains the organic compound represented by the general formula (Ge1) in the organic compound layer 103 as described in Embodiment 1. Therefore, due to the effect of the organic resin layer 180 and the effect of the organic semiconductor device using the organic compound of the present application being inseparably integrated, an organic semiconductor device with high light-emitting efficiency can be provided. Therefore, an organic semiconductor device with good reliability, low driving voltage, and low power consumption can be provided.

[0459] The light-emitting device of one embodiment of the present invention having the organic resin layer 180 as described above contains the organic compound represented by the general formula (Gh1) in the organic compound layer 103 as described in Embodiment 1. Therefore, due to the effect of the organic resin layer 180 and the effect of the organic semiconductor device using the organic compound of the present application being inseparably integrated, an organic semiconductor device with high light-emitting efficiency can be provided. Therefore, an organic semiconductor device with good reliability, low driving voltage, and low power consumption can be provided.

[0460] The light-emitting device of one embodiment of the present invention having the organic resin layer 180 as described above contains the organic compound represented by the general formula (Ge1) and the organic compound represented by the general formula (Gh1) in the organic compound layer 103 as described in Embodiment 1. Therefore, due to the effect of the organic resin layer 180 and the effect of the organic semiconductor device using the organic compound of the present application being inseparably integrated, an organic semiconductor device with high light-emitting efficiency can be provided. Therefore, an organic semiconductor device with good reliability, low driving voltage, and low power consumption can be provided.

[0461] [Display Device 100E] The display device 100E shown in FIG. 17 is a modified example of the display device 100C shown in FIG. 14, and differs from the display device 100C mainly in that it has colored layers 132R, 132G, and 132B.

[0462] In the display device 100E, the light-emitting device 130 has an area that overlaps one of the colored layers 132R, 132G, and 132B. The colored layers 132R, 132G, and 132B can be provided on the surface of the substrate 352 facing the substrate 351. An end of the colored layer 132R, an end of the colored layer 132G, and an end of the colored layer 132B can overlap the light-shielding layer 157.

[0463] In the display device 100E, the light-emitting device 130 can emit, for example, white light. Furthermore, for example, the colored layer 132R can transmit red light, the colored layer 132G can transmit green light, and the colored layer 132B can transmit blue light. The display device 100E may be configured such that the colored layers 132R, 132G, and 132B are provided between the protective layer 131 and the adhesive layer 142.

[0464] 17, and has microlenses 182 on the colored layers 132R, 132G, and 132B. Note that in the figure, the reference numerals of the same components as those in FIG. 17 may be omitted, and the description in FIG. 17 can be referred to for details.

[0465] 18B shows a top view layout of a pixel 178 (pixel 178a and pixel 178b) having subpixels 110 (subpixels 110R, 110G, and 110B), and Fig. 18C shows a top view of a microlens 182 in a region where the subpixels 110R and 110G of the pixel 178 are formed. Note that the region where the common electrode 155 and the organic compound layer 103 are in contact has a width 110Gw in the light-emitting region of the subpixel 110G.

[0466] 16A has a planarization film 143 provided on a protective layer 131, and colored layers 132R, 132G, and 132B provided on the planarization film 144. The planarization film 144 is provided so as to cover the colored layers 132R, 132G, and 132B. A microlens 182 is provided on the planarization film 144.

[0467] As shown in FIG. 18C, the microlens 182 may be provided for each sub-pixel in the region where the sub-pixels are formed.

[0468] 18C, the top surface shape of the microlens 182 is shown as a hexagon, but other shapes may be used as needed. For example, the top surface shape of the recess may be a polygon such as a triangle, a quadrangle (including a rectangle and a square), a pentagon, or a polygon with rounded corners, an ellipse, or a circle.

[0469] The microlenses 182 can be formed using the same material as the organic resin layer 180 .

[0470] The light-emitting device of one embodiment of the present invention having the above-described microlens 182 contains the organic compound represented by the general formula (Ge1) in the organic compound layer 103 as described in Embodiment 1. Therefore, an organic semiconductor device with high emission efficiency can be provided due to the effect of the microlens 182 and the effect of the organic semiconductor device using the organic compound of the present invention being inseparably integrated. Therefore, an organic semiconductor device that is highly reliable, has a low driving voltage, and consumes low power can be provided.

[0471] The light-emitting device of one embodiment of the present invention having the above-described microlens 182 contains the organic compound represented by the general formula (Gh1) in the organic compound layer 103 as described in Embodiment 1. Therefore, an organic semiconductor device with high emission efficiency can be provided due to the effect of the microlens 182 and the effect of the organic semiconductor device using the organic compound of the present invention being inseparably integrated. Therefore, an organic semiconductor device that is highly reliable, has a low driving voltage, and consumes low power can be provided.

[0472] The light-emitting device of one embodiment of the present invention having the above-described microlens 182 contains the organic compound represented by the general formula (Ge1) and the organic compound represented by the general formula (Gh1) in the organic compound layer 103 as described in Embodiment 1. Therefore, an organic semiconductor device with high emission efficiency can be provided due to the effect of the microlens 182 and the effect of the organic semiconductor device using the organic compound of the present invention being inseparably integrated. Therefore, an organic semiconductor device that is highly reliable, has a low driving voltage, and is optimal for a low-power-consumption display for mobile applications can be provided.

[0473] This embodiment mode can be combined with other embodiment modes or examples as appropriate. In addition, in this specification, when a plurality of configuration examples are shown in one embodiment mode, the configuration examples can be combined as appropriate.

[0474] Embodiment 6 In this embodiment, an electronic device according to one embodiment of the present invention will be described.

[0475] The electronic devices of this embodiment include the display device of one embodiment of the present invention in a display portion. The display device of one embodiment of the present invention has low power consumption and high reliability. Therefore, the display device of one embodiment of the present invention can be used in the display portion of various electronic devices.

[0476] Examples of electronic devices include electronic devices with relatively large screens such as television sets, desktop or notebook personal computers, computer monitors, digital signage, large game machines such as pachinko machines, as well as digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and sound playback devices.

[0477] An example of a wearable device that can be worn on the head will be described with reference to FIGS. 19A to 19D.

[0478] The electronic device 700A shown in FIG. 19A and the electronic device 700B shown in FIG. 19B each have a pair of display panels 751, a pair of housings 721, a communication unit (not shown), a pair of mounting units 723, a control unit (not shown), an imaging unit (not shown), a pair of optical members 753, a frame 757, and a pair of nose pads 758.

[0479] The display device of one embodiment of the present invention can be applied to the display panel 751. Therefore, the electronic device can be highly reliable.

[0480] Each of the electronic device 700A and the electronic device 700B can project an image displayed on the display panel 751 onto a display area 756 of the optical member 753. Because the optical member 753 is translucent, the user can see the image displayed in the display area superimposed on a transmitted image visible through the optical member 753.

[0481] The electronic device 700A and the electronic device 700B may be provided with a camera capable of capturing an image in front of them as an imaging unit. Furthermore, the electronic device 700A and the electronic device 700B may each be provided with an acceleration sensor such as a gyro sensor, thereby detecting the orientation of the user's head and displaying an image corresponding to that orientation in the display area 756.

[0482] The communication unit has a wireless communication device, and can supply, for example, a video signal via the wireless communication device. Note that instead of or in addition to the wireless communication device, a connector to which a cable through which a video signal and a power supply potential can be connected may be provided.

[0483] Furthermore, the electronic device 700A and the electronic device 700B are provided with batteries, which can be charged wirelessly and / or wired.

[0484] The housing 721 may be provided with a touch sensor module.

[0485] Various touch sensors can be used as the touch sensor module. For example, various types of touch sensors can be used, such as a capacitance type, a resistive film type, an infrared type, an electromagnetic induction type, a surface acoustic wave type, or an optical type. In particular, it is preferable to use a capacitance type or an optical type sensor in the touch sensor module.

[0486] The electronic device 800A shown in Figure 19C and the electronic device 800B shown in Figure 19D each have a pair of display units 820, a housing 821, a communication unit 822, a pair of mounting units 823, a control unit 824, a pair of imaging units 825, and a pair of lenses 832.

[0487] The display device of one embodiment of the present invention can be applied to the display portion 820. Therefore, the electronic device can have high reliability.

[0488] The display unit 820 is provided inside the housing 821 at a position that can be viewed through the lens 832. In addition, by displaying different images on the pair of display units 820, it is possible to perform three-dimensional display using parallax.

[0489] It is preferable that electronic device 800A and electronic device 800B each have a mechanism that allows the left and right positions of lens 832 and display unit 820 to be adjusted so that they are optimally positioned according to the position of the user's eyes.

[0490] The mounting portion 823 allows the user to mount the electronic device 800A or the electronic device 800B on the head.

[0491] The imaging unit 825 has a function of acquiring external information. Data acquired by the imaging unit 825 can be output to the display unit 820. An image sensor can be used for the imaging unit 825. Furthermore, multiple cameras may be provided to support multiple angles of view, such as telephoto and wide-angle.

[0492] The electronic device 800A may have a vibration mechanism that functions as a bone conduction earphone.

[0493] The electronic device 800A and the electronic device 800B may each have an input terminal to which a cable can be connected for supplying a video signal from a video output device or the like and power for charging a battery provided in the electronic device.

[0494] The electronic device of one embodiment of the present invention may have a function of wirelessly communicating with the earphone 750 .

[0495] 19B includes earphone unit 727. A portion of the wiring connecting earphone unit 727 and the control unit may be disposed inside housing 721 or attachment unit 723.

[0496] 19D includes an earphone unit 827. For example, the earphone unit 827 and the control unit 824 may be configured to be connected to each other by wire.

[0497] As described above, as electronic devices according to one embodiment of the present invention, both glasses-type devices (such as the electronic devices 700A and 700B) and goggle-type devices (such as the electronic devices 800A and 800B) are suitable.

[0498] The electronic device 6500 shown in FIG. 20A is a portable information terminal that can be used as a smartphone.

[0499] The electronic device 6500 includes a housing 6501, a display portion 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, a light source 6508, and the like. The display portion 6502 has a touch panel function.

[0500] The display device of one embodiment of the present invention can be applied to the display portion 6502. Therefore, the electronic device can have high reliability.

[0501] FIG. 20B is a schematic cross-sectional view including the end of the housing 6501 on the microphone 6506 side.

[0502] A light-transmitting protective member 6510 is provided on the display surface side of the housing 6501, and a display panel 6511, an optical member 6512, a touch sensor panel 6513, a printed circuit board 6517, a battery 6518, etc. are arranged in the space surrounded by the housing 6501 and the protective member 6510.

[0503] A display panel 6511, an optical member 6512, and a touch sensor panel 6513 are fixed to the protective member 6510 by adhesive layers (not shown).

[0504] In a region outside the display portion 6502, a part of the display panel 6511 is folded back, and an FPC 6515 is connected to the folded back part. An IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to a terminal provided on a printed circuit board 6517.

[0505] The display device of one embodiment of the present invention can be applied to the display panel 6511. Therefore, an extremely lightweight electronic device can be realized. Furthermore, since the display panel 6511 is extremely thin, a large-capacity battery 6518 can be mounted thereon while keeping the thickness of the electronic device small. Furthermore, by folding back a part of the display panel 6511 and arranging a connection portion with the FPC 6515 on the back side of the pixel portion, an electronic device with a narrow frame can be realized.

[0506] 20C shows an example of a television set. A television set 7100 has a display portion 7000 built into a housing 7171. Here, the housing 7171 is supported by a stand 7173.

[0507] The display device of one embodiment of the present invention can be applied to the display portion 7000. Therefore, the electronic device can have high reliability.

[0508] The television set 7100 shown in FIG. 20C can be operated using operation switches provided on the housing 7171 and a separate remote control 7151.

[0509] 20D shows an example of a laptop personal computer 7200. The laptop personal computer 7200 includes a housing 7211, a keyboard 7212, a pointing device 7213, and an external connection port 7214. The housing 7211 includes a display portion 7000.

[0510] The display device of one embodiment of the present invention can be applied to the display portion 7000. Therefore, the electronic device can have high reliability.

[0511] 20E and 20F show an example of digital signage.

[0512] 20E includes a housing 7301, a display portion 7000, and a speaker 7303. The digital signage 7300 may further include an LED lamp, operation keys (including a power switch or an operation switch), a connection terminal, various sensors, a microphone, and the like.

[0513] 20F shows a digital signage 7400 attached to a cylindrical pillar 7401. The digital signage 7400 has a display unit 7000 provided along the curved surface of the pillar 7401.

[0514] 20E and 20F, the display device of one embodiment of the present invention can be applied to the display portion 7000. Therefore, the electronic device can have high reliability.

[0515] The larger the display unit 7000, the more information can be provided at one time. Also, the larger the display unit 7000, the more easily it will attract people's attention, which can increase the advertising effectiveness of, for example, advertisements.

[0516] Furthermore, as shown in Figures 20E and 20F, it is preferable that the digital signage 7300 or the digital signage 7400 be able to wirelessly link with an information terminal 7311 or an information terminal 7411 such as a smartphone carried by a user.

[0517] The electronic device shown in Figures 21A to 21G has a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or an operation switch), a connection terminal 9006, a sensor 9007 (including a function to measure force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared rays), a microphone 9008, etc.

[0518] 21A to 21G have various functions, such as a function to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date, time, etc., a function to control processing using various software (programs), a wireless communication function, a function to read and process programs or data recorded on a recording medium, etc.

[0519] The electronic devices shown in FIGS. 21A to 21G will be described in detail below.

[0520] FIG. 21A is a perspective view showing a mobile information terminal 9171. The mobile information terminal 9171 can be used as, for example, a smartphone. Note that the mobile information terminal 9171 may be provided with a speaker 9003, a connection terminal 9006, a sensor 9007, or the like. The mobile information terminal 9171 can display text and image information on multiple surfaces. FIG. 21A shows an example in which three icons 9050 are displayed. Information 9051, indicated by a dashed rectangle, can also be displayed on another surface of the display unit 9001. Examples of the information 9051 include notifications of incoming emails, SNS messages, phone calls, etc., the title of the email or SNS message, the sender's name, the date and time, the remaining battery level, and radio wave intensity. Alternatively, the icon 9050 or the like may be displayed in the position where the information 9051 is displayed.

[0521] 21B is a perspective view showing a mobile information terminal 9172. The mobile information terminal 9172 has a function of displaying information on three or more surfaces of the display portion 9001. Here, an example is shown in which information 9052, information 9053, and information 9054 are displayed on different surfaces. For example, a user can check information 9053 displayed in a position that can be observed from above the mobile information terminal 9172 while the mobile information terminal 9172 is stored in a breast pocket of clothes.

[0522] 21C is a perspective view showing a tablet terminal 9173. The tablet terminal 9173 is capable of executing various applications such as mobile phone calls, e-mail, text browsing and creation, music playback, internet communication, and computer games, for example. The tablet terminal 9173 has a display unit 9001, a camera 9002, a microphone 9008, and a speaker 9003 on the front side of a housing 9000. The housing 9000 also has operation keys 9005 as operation buttons and a connection terminal 9006 on the bottom.

[0523] FIG. 21D is a perspective view showing a wristwatch-type mobile information terminal 9200. The mobile information terminal 9200 can be used as, for example, a smart watch (registered trademark). The display surface of the display unit 9001 is curved, and display can be performed along the curved display surface. The mobile information terminal 9200 can also perform hands-free calling by communicating with, for example, a wirelessly capable headset. The mobile information terminal 9200 can also perform data transmission and charging with another information terminal through a connection terminal 9006. Note that charging may be performed by wireless power supply.

[0524] 21E to 21G are perspective views showing a foldable mobile information terminal 9201. Also, FIG. 21E is a perspective view of the mobile information terminal 9201 in an unfolded state, FIG. 21G is a perspective view of the mobile information terminal 9201 in a folded state, and FIG. 21F is a perspective view of a state in the process of changing from one of FIG. 21E and FIG. 21G to the other. The mobile information terminal 9201 is highly portable when folded, and has a seamless, wide display area when unfolded, providing excellent visibility of the display. The display portion 9001 of the mobile information terminal 9201 is supported by three housings 9000 connected by hinges 9055. For example, the display portion 9001 can be bent with a curvature radius of 0.1 mm or more and 150 mm or less.

[0525] This embodiment mode can be combined with other embodiment modes or examples as appropriate. In addition, in this specification, when a plurality of configuration examples are shown in one embodiment mode, the configuration examples can be combined as appropriate.

[0526] In this example, the manufacturing methods and characteristics of light-emitting device B1, light-emitting device G1, and light-emitting device R1, which are light-emitting devices according to one embodiment of the present invention, and comparative light-emitting devices B1, G1, and R1, which are comparative light-emitting devices, will be described in detail. The structural formulas of main compounds used in light-emitting device B1, light-emitting device G1, light-emitting device R1, comparative light-emitting device B1, comparative light-emitting device G1, and comparative light-emitting device R1 are shown below.

[0527]

[0528]

[0529] (Method of Fabricating Light-Emitting Device B1) First, 50 nm of titanium (Ti), 70 nm of aluminum (Al), and 6 nm of Ti were laminated on a glass substrate from the substrate side, and then baked at 300°C in air for 1 hour. After that, 10 nm of indium tin oxide containing silicon oxide (ITSO) was sequentially laminated by sputtering to form a first electrode 101 measuring 2 mm x 2 mm. The ITSO functioned as an anode and was considered to be the first electrode 101 together with the above-mentioned laminated structure of Ti and Al.

[0530] Next, the surface of the substrate was washed with water as a pretreatment for forming a light-emitting device on the substrate.

[0531] After that, about 1 × 10 −４ The substrate was introduced into a vacuum deposition apparatus whose interior had been reduced in pressure to 100 Pa, and was vacuum baked at 170° C. for 60 minutes in a heating chamber within the vacuum deposition apparatus, after which the substrate was allowed to cool for approximately 30 minutes.

[0532] Next, the substrate was fixed to a holder installed in a vacuum evaporation apparatus so that the surface on which the first electrode 101 was formed faced downward. N-(9,9-diphenyl-9H-fluoren-2-yl)-N-(9,9′-spirobi[fluoren]-2-yl)dibenzofuran-2-amine (abbreviation: Fr(2)FASF(2)-02) represented by the above structural formula (i) and an electron acceptor material (OCHD-003) having a molecular weight of 672 and containing four or more fluorines were co-deposited by evaporation to a thickness of 10 nm on the inorganic insulating film and the first electrode 101 in a weight ratio of 1:0.05 (=Fr(2)FASF(2)-02:OCHD-003). Note that Fr(2)FASF(2)-02 is the organic compound represented by structural formula (Gh1) described in Embodiment 1, to form a hole-injection layer 111.

[0533] On the hole injection layer 111, Fr(2)FASF(2)-02 was evaporated to a thickness of 101 nm to form a first hole transport layer, and then N,N-bis[4-(dibenzofuran-4-yl)phenyl]-4-amino-p-terphenyl (abbreviation: DBfBB1TP) represented by the above structural formula (ii) was evaporated to a thickness of 10 nm to form a second hole transport layer, thereby forming a hole transport layer 112.

[0534] Subsequently, on the hole-transport layer 112, 9-(1-naphthyl)-10-[4-(2-naphthyl)phenyl]anthracene (abbreviation: αN-βNPAnth) represented by the above structural formula (iii) and N,N'-diphenyl-N,N'-bis(9-phenyl-9H-carbazol-2-yl)naphtho[2,3-b;6,7-b']bisbenzofuran-3,10-diamine (abbreviation: 3,10PCA2Nbf(IV)-02) represented by the above structural formula (iv) were co-deposited to a thickness of 25 nm so as to give a weight ratio of 1:0.015 (=αN-βNPAnth:3,10PCA2Nbf(IV)-02), to form a light-emitting layer 113.

[0535] Thereafter, 2-[4-(2-naphthalenyl)phenyl]-4-phenyl-6-spiro[9H-fluorene-9,9′-[9H]xanthene]-4-yl-1,3,5-triazine (abbreviation: βNP-SFx(4)Tzn) represented by the structural formula (v) was evaporated to a thickness of 20 nm, and subsequently 2,2′-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline) (abbreviation: mPPhen2P) represented by the structural formula (vi) was evaporated to a thickness of 15 nm to form an electron transport layer 114. Note that βNP-SFx(4)Tzn is the organic compound represented by the structural formula (Ge1) described in Embodiment 1.

[0536] Next, lithium fluoride (LiF) and ytterbium (Yb) were co-evaporated to a thickness of 1.5 nm so as to have a volume ratio of 1:0.5 (=LiF:Yb) to form the electron-injection layer 115. Then, silver (Ag) and magnesium (Mg) were co-evaporated to a thickness of 25 nm so as to have a volume ratio of 1:0.1 to form the second electrode 102, thereby completing the light-emitting device of one embodiment of the present invention. In addition, ITO was deposited to a thickness of 70 nm on the second electrode 102 as a cap layer to improve the light extraction efficiency.

[0537] Next, in a glove box with a nitrogen atmosphere, the light-emitting device was sealed with a glass substrate to prevent it from being exposed to the atmosphere (a UV-curable sealant was applied around the element, UV was irradiated only onto the sealant without irradiating the light-emitting device, and heat treatment was performed at 80°C under atmospheric pressure for 1 hour), thereby forming light-emitting device B1.

[0538] (Method for Fabricating Comparative Light-Emitting Device B1) Comparative light-emitting device B1 was fabricated by replacing βNP-SFx(4)Tzn in light-emitting device B with 2-{3-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}dibenzo[f,h]quinoxaline (abbreviation: 2mPCCzPDBq) represented by the above structural formula (viii), and replacing the hole injection layer with N-(biphenyl-4-yl)-N- The light-emitting device was fabricated in the same manner as in the light-emitting device B1, except that a 10-nm thick film of [4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-dimethyl-9H-fluoren-2-amine (abbreviation: PCBBiF) and OCHD-003 were co-evaporated at a weight ratio of 1:0.03 (= PCBBiF:OCHD-003) and a 96-nm thick film of PCBBiF was formed as the first hole-transport layer.

[0539] (Method of Fabricating Light-Emitting Device G1) First, the first electrode 101 to the hole injection layer 111 were fabricated in the same manner as in the light-emitting device B1.

[0540] Next, Fr(2)FASF(2)-02 was vapor-deposited on the hole injection layer 111 to a thickness of 12 nm to form a hole transport layer 112 .

[0541] Subsequently, on the hole transport layer 112, 8-(1,1':4',1''-terphenyl-3-yl)-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofuro[3,2-d]pyrimidine (abbreviation: 8mpTP-4mDBtPBfpm) represented by the above structural formula (ix), 9-(2-naphthyl)-9'-phenyl-9H,9'H-3,3'-bicarbazole (abbreviation: βNCCP) represented by the above structural formula (x), and [2-d ３ -methyl-8-(2-pyridinyl-κN)benzofuro[2,3-b]pyridine-κC]bis[2-(5-d ３ [5-methyl-2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviation: Ir(5mppy-d ３ ) ２ (mbfpypy-d ３)) in a weight ratio of 0.6:0.4:0.1 (=8mpTP-4mDBtPBfpm:βNCCP:Ir(5mppy-d ３ ) ２ (mbfpypy-d ３ )) was co-evaporated to form a light-emitting layer 113 having a thickness of 40 nm.

[0542] Thereafter, βNP-SFx(4)Tzn was evaporated to a thickness of 10 nm, and subsequently mPPhen2P was evaporated to a thickness of 15 nm to form the electron transport layer 114.

[0543] Next, lithium fluoride (LiF) and ytterbium (Yb) were co-evaporated to a thickness of 1.5 nm so as to have a volume ratio of 1:0.5 (=LiF:Yb) to form the electron-injection layer 115. Then, silver (Ag) and magnesium (Mg) were co-evaporated to a thickness of 25 nm so as to have a volume ratio of 1:0.1 to form the second electrode 102, thereby completing the light-emitting device of one embodiment of the present invention. In addition, ITO was deposited to a thickness of 70 nm on the second electrode 102 as a cap layer to improve the light extraction efficiency.

[0544] Next, in a glove box with a nitrogen atmosphere, the light-emitting device was sealed with a glass substrate to prevent it from being exposed to the atmosphere (a UV-curable sealant was applied around the element, UV was irradiated only onto the sealant without irradiating the light-emitting device, and heat treatment was performed at 80°C under atmospheric pressure for 1 hour), thereby forming light-emitting device G1.

[0545] (Method for Fabricating Comparative Light-Emitting Device G1) Comparative light-emitting device G1 was fabricated in the same manner as light-emitting device G1, except that the βNP-SFx(4)Tzn in light-emitting device G was changed to 2mPCCzPDBq, the hole injection layer was formed by co-evaporating PCBBiF and OCHD-003 to a thickness of 10 nm at a weight ratio of 1:0.03 (=PCBBiF:OCHD-003), and the first hole transport layer was formed by depositing a 10 nm film of PCBBiF.

[0546] (Method of Fabricating Light-Emitting Device R1) First, the first electrode 101 to the hole injection layer 111 were fabricated in the same manner as in the light-emitting device B1.

[0547] On the hole injection layer 111, Fr(2)FASF(2)-02 was evaporated to a thickness of 27.5 nm to form a hole transport layer 112.

[0548] Subsequently, on the hole-transport layer 112, 11-[3′-(dibenzothiophen-4-yl)biphenyl-3-yl]phenanthro[9′,10′:4,5]furo[2,3-b]pyrazine (abbreviation: 11mDBtBPPnfpr) represented by the above structural formula (xiii), PCBBiF, and OCPG-006, a red phosphorescent material, were co-deposited to a thickness of 40 nm so as to have a weight ratio of 0.7:0.3:0.05 (=11mDBtBPPnfpr:PCBBiF:OCPG-006) to form the light-emitting layer 113.

[0549] Thereafter, βNP-SFx(4)Tzn was evaporated to a thickness of 20 nm, and subsequently mPPhen2P was evaporated to a thickness of 20 nm to form the electron transport layer 114.

[0550] Next, lithium fluoride (LiF) and ytterbium (Yb) were co-evaporated to a thickness of 1.5 nm so as to have a volume ratio of 1:0.5 (=LiF:Yb) to form the electron-injection layer 115. Then, silver (Ag) and magnesium (Mg) were co-evaporated to a thickness of 25 nm so as to have a volume ratio of 1:0.1 to form the second electrode 102, thereby completing the light-emitting device of one embodiment of the present invention. In addition, ITO was deposited to a thickness of 70 nm on the second electrode 102 as a cap layer to improve the light extraction efficiency.

[0551] Next, in a glove box with a nitrogen atmosphere, the light-emitting device was sealed with a glass substrate to prevent it from being exposed to the atmosphere (a UV-curable sealant was applied around the element, UV was irradiated only onto the sealant without irradiating the light-emitting device, and heat treatment was performed at 80°C under atmospheric pressure for 1 hour), thereby forming light-emitting device R1.

[0552] (Method of Fabricating Comparative Light-Emitting Device R1) Comparative light-emitting device R1 was fabricated in the same manner as light-emitting device R1, except that the βNP-SFx(4)Tzn in light-emitting device R was changed to 2mPCCzPDBq, the hole injection layer was formed by co-evaporating PCBBiF and OCHD-003 to a thickness of 10 nm at a weight ratio of 1:0.03 (=PCBBiF:OCHD-003), and the first hole transport layer was formed by depositing a film of PCBBiF to a thickness of 25 nm.

[0553] The device structures of light-emitting device B1, light-emitting device G1, light-emitting device R1, comparative light-emitting device B1, comparative light-emitting device G1 and comparative light-emitting device R1 are shown below.

[0554]

[0555]

[0556]

[0557] The current density-voltage characteristics of the light-emitting device B1 and the comparative light-emitting device B1 are shown in FIG. 22 , and the blue index-luminance characteristics are shown in FIG. 23 . ２ The normalized luminance time change characteristics are shown in FIG.

[0558] Also, 1000 cd / cm ２ The values ​​of voltage, current, current density, CIE chromaticity, current efficiency, external quantum efficiency, and blue index around 1000 kJ / cm2 are shown below. The luminance, CIE chromaticity, and electroluminescence spectrum were measured using a spectroradiometer (SR-UL1R, manufactured by Topcon Corporation) at room temperature.

[0559] The blue index (BI) is a value obtained by further dividing the current efficiency (cd / A) by the y chromaticity calculated using the CIE 1931 color system, and is one of the indices that represent the luminous characteristics of blue light emission. The smaller the y chromaticity, the higher the color purity of blue light emission tends to be. Blue light emission with high color purity can express a desired color on a display even with a small luminance component. Furthermore, the use of blue light emission with high color purity reduces the required luminance of blue on a display, thereby achieving a reduction in power consumption. Therefore, the BI, which takes into account the y chromaticity, which is one of the indices of blue purity, is sometimes used as a means of representing the efficiency of blue light emission. It can be said that the higher the BI, the better the efficiency of blue light emission on a display.

[0560]

[0561] 22 to 24 and Table 4, it was found that light-emitting device B1 has a lower driving voltage and better reliability than the comparative light-emitting device. It was found that the light-emitting efficiency is equivalent to that of comparative light-emitting device B1, but the efficiency decline in the low luminance range is small, and the light-emitting device exhibits a stable, high blue index value across the entire range from low luminance to high luminance. If the efficiency varies greatly depending on the luminance, it becomes difficult to balance it with light-emitting devices of other colors when used in a display device. Furthermore, the required current value changes depending on the luminance, making control during panel driving complicated. It was found that light-emitting device B1 is a light-emitting device with good characteristics without such disadvantages.

[0562] The current density-voltage characteristics of the light-emitting device G1 and the comparative light-emitting device G1 are shown in FIG. 25, and the current efficiency-luminance characteristics are shown in FIG. 26. ２ FIG. 27 shows the normalized luminance time change characteristics in the above case.

[0563] The current density-voltage characteristics of the light-emitting device R1 and the comparative light-emitting device R1 are shown in FIG. 28, and the current efficiency-luminance characteristics are shown in FIG. 29. ２ The normalized luminance time change characteristics are shown in FIG.

[0564] Also, 1000 cd / cm２ The values ​​of voltage, current, current density, CIE chromaticity, and current efficiency around 1000 kJ / cm2 are shown below. The luminance, CIE chromaticity, and electroluminescence spectrum were measured using a spectroradiometer (SR-UL1R, manufactured by Topcon Corporation) at room temperature.

[0565]

[0566]

[0567] Like light-emitting device B1, light-emitting devices G1 and R1 use Fr(2)FASF(2)-02, an organic compound represented by structural formula (Gh1) described in embodiment 1, for the hole injection layer and hole transport layer, and βNP-SFx(4)Tzn, an organic compound represented by structural formula (Ge1) described in embodiment 1, for the electron transport layer in contact with the light-emitting layer.

[0568] 25 to 30 and Tables 5 and 6, it was found that light-emitting device G1 and light-emitting device R1 each exhibited better characteristics than the comparative light-emitting devices. Thus, by using Fr(2)FASF(2)-02, an organic compound represented by structural formula (Gh1), ​​in the hole injection layer and hole transport layer, and βNP-SFx(4)Tzn, an organic compound represented by structural formula (Ge1), in the electron transport layer in contact with the light-emitting layer, light-emitting devices exhibiting different emission colors of red, green, and blue can all be provided with good characteristics.

[0569] In this example, the manufacturing methods and characteristics of light-emitting devices B2-1 and B2-2, which are light-emitting devices according to one embodiment of the present invention, and comparative light-emitting devices B2-1 and B2-2, which are comparative light-emitting devices, are described in detail. The structural formulae of main compounds used in the light-emitting devices B2-1, B2-2, B2-1, and B2-2 are shown below.

[0570]

[0571] (Method for Fabricating Light-Emitting Device B2-1) First, 50 nm of titanium (Ti), 70 nm of aluminum (Al), and 6 nm of Ti were laminated on a glass substrate from the substrate side, and then baked at 300° C. in air for 1 hour. After that, 10 nm of indium tin oxide containing silicon oxide (ITSO) was sequentially laminated by sputtering to form a first electrode 101 measuring 2 mm × 2 mm. The ITSO functioned as an anode and was considered to be the first electrode 101 together with the above-mentioned laminated structure of Ti and Al.

[0572] Next, the surface of the substrate was washed with water as a pretreatment for forming a light-emitting device on the substrate.

[0573] After that, about 10 −４ The substrate was introduced into a vacuum deposition apparatus whose interior had been reduced in pressure to 100 Pa, and was vacuum baked at 170° C. for 60 minutes in a heating chamber within the vacuum deposition apparatus, after which the substrate was allowed to cool for approximately 30 minutes.

[0574] Next, the substrate was fixed to a holder installed in a vacuum evaporation apparatus so that the surface on which the first electrode 101 was formed faced downward. N-(9,9-diphenyl-9H-fluoren-2-yl)-N-(9,9′-spirobi[fluoren]-2-yl)dibenzofuran-2-amine (abbreviation: Fr(2)FASF(2)-02) represented by the above structural formula (i) and an electron acceptor material (OCHD-003) having a molecular weight of 672 and containing four or more fluorines were co-deposited by evaporation to a thickness of 10 nm on the inorganic insulating film and the first electrode 101 in a weight ratio of 1:0.05 (=Fr(2)FASF(2)-02:OCHD-003). Note that Fr(2)FASF(2)-02 is the organic compound represented by structural formula (Gh1) described in Embodiment 1, to form a hole-injection layer 111.

[0575] On the hole injection layer 111, Fr(2)FASF(2)-02 was evaporated to a thickness of 101 nm to form a first hole transport layer, and then N,N-bis[4-(dibenzofuran-4-yl)phenyl]-4-amino-p-terphenyl (abbreviation: DBfBB1TP) represented by the above structural formula (ii) was evaporated to a thickness of 10 nm to form a second hole transport layer, thereby forming a hole transport layer 112.

[0576] Subsequently, on the hole-transport layer 112, 9-(1-naphthyl)-10-[4-(2-naphthyl)phenyl]anthracene (abbreviation: αN-βNPAnth) represented by the above structural formula (iii) and N,N'-diphenyl-N,N'-bis(9-phenyl-9H-carbazol-2-yl)naphtho[2,3-b;6,7-b']bisbenzofuran-3,10-diamine (abbreviation: 3,10PCA2Nbf(IV)-02) represented by the above structural formula (iv) were co-deposited to a thickness of 25 nm so as to give a weight ratio of 1:0.015 (=αN-βNPAnth:3,10PCA2Nbf(IV)-02), to form a light-emitting layer 113.

[0577] Thereafter, 2-[4-(2-naphthalenyl)phenyl]-4-phenyl-6-spiro[9H-fluorene-9,9′-[9H]xanthene]-4-yl-1,3,5-triazine (abbreviation: βNP-SFx(4)Tzn) represented by the structural formula (v) was evaporated to a thickness of 20 nm, and subsequently 2,2′-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline) (abbreviation: mPPhen2P) represented by the structural formula (vi) was evaporated to a thickness of 15 nm to form an electron transport layer 114. Note that βNP-SFx(4)Tzn is the organic compound represented by the structural formula (Ge1) described in Embodiment 1.

[0578] Next, lithium fluoride (LiF) and ytterbium (Yb) were co-evaporated to a thickness of 1.5 nm so as to have a volume ratio of 1:0.5 (=LiF:Yb) to form the electron-injection layer 115. Then, silver (Ag) and magnesium (Mg) were co-evaporated to a thickness of 25 nm so as to have a volume ratio of 1:0.1 to form the second electrode 102, thereby completing the light-emitting device of one embodiment of the present invention. In addition, ITO was deposited to a thickness of 70 nm on the second electrode 102 as a cap layer to improve the light extraction efficiency.

[0579] Next, in a glove box with a nitrogen atmosphere, the light-emitting device was sealed with a glass substrate to prevent it from being exposed to the atmosphere (a UV-curable sealant was applied around the element, UV was irradiated only onto the sealant without irradiating the light-emitting device, and heat treatment was performed at 80°C under atmospheric pressure for 1 hour), thereby forming light-emitting device B2-1.

[0580] (Method for Fabricating Light-Emitting Device B2-2) Light-emitting device B2-2 was fabricated in the same manner as light-emitting device B2-1, up to the step of forming electron transport layer 114.

[0581] Next, the sample on which the electron transport layer 114 had been formed was removed from the vacuum deposition apparatus and exposed to the atmosphere. Then, using trimethylaluminum (abbreviation: TMA) as a precursor and water vapor as an oxidizing agent, aluminum oxide was deposited by the ALD method to a thickness of 30 nm, thereby forming a first sacrificial layer.

[0582] Next, a tungsten film was formed on the first sacrificial layer by sputtering to a thickness of 54 nm, thereby forming a second sacrificial layer.

[0583] A resist was formed on the second sacrificial layer using photoresist, and the organic layers from the hole injection layer 111 to the electron transport layer 114 were processed using lithography so that a slit with a width of 3 μm was formed at a position 3.5 μm away from the end of the first electrode.

[0584] Specifically, sulfur hexafluoride (SF ６ The second sacrificial layer is processed using an etching gas containing oxygen (O ２ The photoresist was removed using an ashing gas containing fluoroform (CHF ３ ) and helium (He) and methane (CH ４ ) with CHF ３ :He:CH ４ The first sacrificial layer was processed using an etching gas containing oxygen (O ２ The organic compound layers including the electron transport layer 114, the light emitting layer 113, the hole transport layer 112, and the hole injection layer 111 were processed using an etching gas containing the compound.

[0585] After processing by photolithography, SF ６The second sacrificial layer was removed using an etching gas containing HCl, and then an aluminum oxide film was formed to a thickness of 15 nm by the ALD method using TMA as a precursor and water vapor as an oxidizing agent, forming a protective film to protect the top surface and end surfaces of the processed organic compound layer.

[0586] After the surface was hydrophobized using a silylating agent such as hexamethyldisilazane (HMDS), a photosensitive resin was applied, exposed, and developed to form an insulating layer at the end of the processed organic compound layer and between adjacent organic compound layers. After this, the protective film not covered by the insulating layer was removed with an acidic etching solution to expose the organic compound layer.

[0587] Then, 1 x 10 −４ The substrate was introduced into a vacuum deposition apparatus whose inside had been reduced in pressure to about Pa, and heat treatment was carried out at 100° C. for 90 minutes in a heating chamber of the vacuum deposition apparatus.

[0588] After cooling for 15 minutes, lithium fluoride (LiF) and ytterbium (Yb) were co-evaporated to a thickness of 1.5 nm to form the electron-injection layer 115, and silver (Ag) and magnesium (Mg) were co-evaporated to a volume ratio of 1:0.1 to a thickness of 25 nm to form the second electrode 102. Thus, a light-emitting device according to one embodiment of the present invention was fabricated. Furthermore, ITO was deposited as a cap layer to a thickness of 70 nm on the second electrode 102 to improve light extraction efficiency.

[0589] Next, in a glove box with a nitrogen atmosphere, the light-emitting device was sealed with a glass substrate to prevent it from being exposed to the atmosphere (a UV-curable sealant was applied around the element, UV was irradiated only onto the sealant without irradiating the light-emitting device, and heat treatment was performed at 80°C under atmospheric pressure for 1 hour), thereby forming light-emitting device B2-2.

[0590] (Method of Fabricating Comparative Light-Emitting Devices B2-1 and B2-2) Comparative light-emitting device B2-1 is light-emitting device B2-1, and comparative light-emitting device B2-2 is light-emitting device 2-2, in which βNP-SFx(4)Tzn in light-emitting device B2-1 is replaced with 2-{3-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}dibenzo[f,h]quinoxaline (abbreviation: 2mPCCzPDBq) represented by the above structural formula (viii), and the hole injection layer is replaced with N-(bif) represented by the above structural formula (vii). The light-emitting device was fabricated in the same manner as in B2-1, except that a 10-nm thick layer was formed by co-evaporating (PCBBiF)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-dimethyl-9H-fluoren-2-amine (abbreviation: PCBBiF) and OCHD-003 at a weight ratio of 1:0.03 (=PCBBiF:OCHD-003), and a 96-nm thick layer of PCBBiF was formed as the first hole-transport layer.

[0591] The device structures of light-emitting device B2-1, light-emitting device B2-2, comparative light-emitting device B2-1, and comparative light-emitting device B2-2 are shown below.

[0592]

[0593] FIG. 31 shows the current density-voltage characteristics of the light-emitting device B2-1, the light-emitting device B2-2, the comparative light-emitting device B2-1, and the comparative light-emitting device B2-2.

[0594] 31 shows that the light-emitting device B2-1 has a lower driving voltage than the comparative light-emitting device B2-1, and that the driving voltage of the light-emitting device B2-2, which is a light-emitting device according to one embodiment of the present invention and has undergone a photolithography process, is lower than that of the comparative light-emitting device B2-2. It was also found that the increase in driving voltage caused by the photolithography process can be kept small in the light-emitting device according to one embodiment of the present invention.

[0595] 100A: display device, 100B: display device, 100C: display device, 100D: display device, 100E: display device, 100: display device, 101: first electrode, 101B: first electrode, 101G: first electrode, 101R: first electrode, 101S: first electrode, 101W: first electrode, 102: second electrode, 102S: second electrode, 103B: organic compound layer, 103Bf: EL film, 103G: organic compound layer, 103Gf: EL film, 103R: organic compound layer, 103Rf: EL film, 103: organic compound layer, 103S: organic compound layer, 104: common layer, 110B: secondary Pixel, 110G: sub-pixel, 110R: sub-pixel, 110W: sub-pixel, 110: sub-pixel, 111: hole injection layer, 111S: hole injection layer, 112B: conductive layer, 112R: conductive layer, 112: hole transport layer, 112S: hole transport layer, 113: light-emitting layer, 114: electron transport layer, 114S: electron transport layer, 115: electron injection layer, 115S: electron injection layer, 116: charge generation layer, 117: P-type layer, 118: electron relay layer, 119: electron injection buffer layer, 120: substrate, 122: resin layer, 125f: inorganic insulating film, 125: inorganic insulating layer, 126B: conductive layer, 126R: conductive layer, 127a : insulating layer, 127f: insulating film, 127: insulating layer, 128: layer, 129B: conductive layer, 129R: conductive layer, 130B: light-emitting device, 130G: light-emitting device, 130R: light-emitting device, 130: light-emitting device, 131: protective layer, 132B: colored layer, 132G: colored layer, 132R: colored layer, 140: connecting portion, 141: region, 142: adhesive layer, 151B: conductive layer, 151C: conductive layer, 151f: conductive film, 151G: conductive layer, 151R: conductive layer, 151: conductive layer, 152B: conductive layer, 152C: conductive layer, 152f: conductive film, 152G: conductive layer, 152R: conductive layer , 152: conductive layer, 153: insulating layer, 155: common electrode, 156B: insulating layer, 156C: insulating layer, 156f: insulating film, 156G: insulating layer, 156R: insulating layer, 156: insulating layer, 157: light-shielding layer, 158B: sacrificial layer, 158Bf: sacrificial film, 158Rf: sacrificial film, 158G: sacrificial layer, 158Gf: sacrificial film, 158R: sacrificial layer, 158Rf: sacrificial film, 159B: mask layer, 159Bf: mask film, 159G: mask layer, 159Gf: mask film, 159R: mask layer, 159Rf: mask film, 166: conductive layer, 171: insulating layer, 172: conductive layer, 173: insulating layer,174: insulating layer, 175: insulating layer, 176: plug, 177: pixel portion, 178: pixel, 178a: pixel, 178b: pixel, 179: conductive layer, 190B: resist mask, 190G: resist mask, 190R: resist mask, 191: resist mask, 201: transistor, 204: connection portion, 205: transistor, 211: insulating layer, 213 : insulating layer, 214: insulating layer, 215: insulating layer, 221: conductive layer, 222a: conductive layer, 222b: conductive layer, 223: conductive layer, 224B: conductive layer, 224C: conductive layer, 224G: conductive layer, 224R: conductive layer, 231: semiconductor layer, 240: capacitance, 241: conductive layer, 242: connection layer, 243: insulating layer, 245: conductive layer, 254: insulating layer, 255: insulating layer, 256: plug, 261: insulating layer, 271: plug, 280: display module, 281: display section, 282: circuit section, 283a: pixel circuit, 283: pixel circuit section, 284a: pixel, 284: pixel section, 285: terminal section, 286: wiring section, 290: FPC, 291: substrate, 292: substrate, 301: substrate, 310: transistor, 311: conductive layer, 312 : low res...

Claims

An organic semiconductor device comprising an organic compound represented by general formula (Ge1) and an organic compound represented by general formula (Gh1). (In the general formula (Ge1), A １ or A ３ Each independently represents a nitrogen atom or a carbon atom; A １ or A ３ At least one of the groups represents nitrogen; L １ ~L ３ each independently represents a substituted or unsubstituted arylene group having 6 to 30 carbon atoms or a substituted or unsubstituted heteroarylene group having 1 to 30 carbon atoms; Ar １ is a heteroaryl group represented by the general formula (Ge1-1), and Ar ２ and Ar ３ each independently represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, and Ar １ represents any one of the heteroaryl groups represented by the general formula (Ge1-1), l, m, and n each independently represent an integer of 0 to 4, and when l, m, and n are 2 or more, L １ , L ２ and L ３ may be the same or different. In addition, in the general formula (Ge1-1), X represents a sulfur atom or an oxygen atom, R １ ~R １６ any one of which represents a bond between the general formula (Ge1), and the rest each independently represents any one of hydrogen (including deuterium), a substituted or unsubstituted silyl group, a cyano group, a nitro group, a substituted or unsubstituted boron group, a substituted or unsubstituted carbonyl group, a substituted or unsubstituted aryloxy group having 6 to 30 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted haloalkyl group having 1 to 10 carbon atoms, fluorine, a substituted or unsubstituted alkyl group having 1 to 8 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, and a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms. (In the above general formula (Gh1), ​​Ar ４ represents a substituted or unsubstituted fluorenyl group or a substituted or unsubstituted spirobi[9H-fluorenyl]-yl group; Ar ５ represents any one of a substituted or unsubstituted aryl group having 6 to 30 carbon atoms and a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms; B １ represents any one of a substituted or unsubstituted dibenzofuranyl group, a substituted or unsubstituted dibenzothiophenyl group, a substituted or unsubstituted benzonaphthofuranyl group, a substituted or unsubstituted benzonaphthothiophenyl group, a substituted or unsubstituted dinaphthofuranyl group, and a substituted or unsubstituted dinaphthothiophenyl group. ４ ~L ６ each independently represents a substituted or unsubstituted arylene group having 6 to 30 carbon atoms or a substituted or unsubstituted heteroarylene group having 1 to 30 carbon atoms; α, β, and γ each independently represent an integer of 0 to 4; when α, β, and γ are 2 or more, L ４ , L ５ and L ６ may be the same or different.) 　 A pixel electrode; A common electrode; an organic compound layer located between the pixel electrode and the common electrode; the organic compound layer has a light-emitting layer, the organic compound layer contains an organic compound represented by general formula (Ge1) and an organic compound represented by general formula (Gh1), the organic compound represented by the general formula (Ge1) is contained between the light-emitting layer and the common electrode, A light-emitting device comprising an organic compound represented by the general formula (Gh1) between the light-emitting layer and the pixel electrode. (In the general formula (Ge1), A １ or A ３ Each independently represents a nitrogen atom or a carbon atom; A １ or A ３ At least one of the groups represents nitrogen; L １ ~L ３ each independently represents a substituted or unsubstituted arylene group having 6 to 30 carbon atoms or a substituted or unsubstituted heteroarylene group having 1 to 30 carbon atoms; Ar １ is a heteroaryl group represented by the general formula (Ge1-1), and Ar ２ and Ar ３ each independently represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, and Ar １ represents any one of the heteroaryl groups represented by the general formula (Ge1-1), l, m, and n each independently represent an integer of 0 to 4, and when l, m, and n are 2 or more, L １ , L ２ and L ３ may be the same or different. In addition, in the general formula (Ge1-1), X represents a sulfur atom or an oxygen atom, R １ ~R １６ any one of which represents a bond between the general formula (Ge1), and the rest each independently represents any one of hydrogen (including deuterium), a substituted or unsubstituted silyl group, a cyano group, a nitro group, a substituted or unsubstituted boron group, a substituted or unsubstituted carbonyl group, a substituted or unsubstituted aryloxy group having 6 to 30 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted haloalkyl group having 1 to 10 carbon atoms, fluorine, a substituted or unsubstituted alkyl group having 1 to 8 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, and a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms. (In the above general formula (Gh1), ​​Ar ４ represents a substituted or unsubstituted fluorenyl group or a substituted or unsubstituted spirobi[9H-fluorenyl]-yl group; Ar ５ represents any one of a substituted or unsubstituted aryl group having 6 to 30 carbon atoms and a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms; B １ represents any one of a substituted or unsubstituted dibenzofuranyl group, a substituted or unsubstituted dibenzothiophenyl group, a substituted or unsubstituted benzonaphthofuranyl group, a substituted or unsubstituted benzonaphthothiophenyl group, a substituted or unsubstituted dinaphthofuranyl group, and a substituted or unsubstituted dinaphthothiophenyl group. ４ ~L ６ each independently represents a substituted or unsubstituted arylene group having 6 to 30 carbon atoms or a substituted or unsubstituted heteroarylene group having 1 to 30 carbon atoms; α, β, and γ each independently represent an integer of 0 to 4; when α, β, and γ are 2 or more, L ４ , L ５ and L ６ may be the same or different.) 　 A pixel electrode and a common electrode, an organic compound layer located between the pixel electrode and the common electrode; the organic compound layer includes a first light-emitting unit, a second light-emitting unit, and an intermediate layer located between the first light-emitting unit and the second light-emitting unit; the first light-emitting unit is located between the pixel electrode and the intermediate layer; the second light-emitting unit is located between the intermediate layer and the common electrode; the first light-emitting unit has a first light-emitting layer; the second light-emitting unit has a second light-emitting layer; an organic compound represented by general formula (Ge1) is contained between the first light-emitting layer and the intermediate layer, or between the second light-emitting layer and the common electrode, or both of these are A tandem light-emitting device comprising an organic compound represented by general formula (Gh1) between the pixel electrode and the first light-emitting layer, or between the intermediate layer and the second light-emitting layer, or both. (In the general formula (Ge1), A １ or A ３ Each independently represents a nitrogen atom or a carbon atom; A １ or A ３ At least one of the groups represents nitrogen; L １ ~L ３ each independently represents a substituted or unsubstituted arylene group having 6 to 30 carbon atoms or a substituted or unsubstituted heteroarylene group having 1 to 30 carbon atoms; Ar １ is a heteroaryl group represented by the general formula (Ge1-1), and Ar ２ and Ar ３ each independently represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, and Ar １ represents any one of the heteroaryl groups represented by the general formula (Ge1-1), l, m, and n each independently represent an integer of 0 to 4, and when l, m, and n are 2 or more, L １ , L ２ and L ３ may be the same or different. In addition, in the general formula (Ge1-1), X represents a sulfur atom or an oxygen atom, R １ ~R １６ any one of which represents a bond between the general formula (Ge1), and the rest each independently represents any one of hydrogen (including deuterium), a substituted or unsubstituted silyl group, a cyano group, a nitro group, a substituted or unsubstituted boron group, a substituted or unsubstituted carbonyl group, a substituted or unsubstituted aryloxy group having 6 to 30 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted haloalkyl group having 1 to 10 carbon atoms, fluorine, a substituted or unsubstituted alkyl group having 1 to 8 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, and a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms. (In the above general formula (Gh1), ​​Ar ４ represents a substituted or unsubstituted fluorenyl group or a substituted or unsubstituted spirobi[9H-fluorenyl]-yl group; Ar ５ represents any one of a substituted or unsubstituted aryl group having 6 to 30 carbon atoms and a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms; B １ represents any one of a substituted or unsubstituted dibenzofuranyl group, a substituted or unsubstituted dibenzothiophenyl group, a substituted or unsubstituted benzonaphthofuranyl group, a substituted or unsubstituted benzonaphthothiophenyl group, a substituted or unsubstituted dinaphthofuranyl group, and a substituted or unsubstituted dinaphthothiophenyl group. ４ ~L ６ each independently represents a substituted or unsubstituted arylene group having 6 to 30 carbon atoms or a substituted or unsubstituted heteroarylene group having 1 to 30 carbon atoms; α, β, and γ each independently represent an integer of 0 to 4; when α, β, and γ are 2 or more, L ４ , L ５ and L ６ may be the same or different.) 　 A pixel electrode; A common electrode; an organic compound layer located between the pixel electrode and the common electrode; The organic compound layer has a photoelectric conversion layer, The organic compound layer contains an organic compound represented by general formula (Ge1) and an organic compound represented by general formula (Gh1), the organic compound represented by the general formula (Ge1) is contained between the photoelectric conversion layer and the common electrode, A light-receiving device comprising an organic compound represented by the general formula (Gh1) between the photoelectric conversion layer and the pixel electrode. (In the general formula (Ge1), A １ or A ３ Each independently represents a nitrogen atom or a carbon atom; A １ or A ３ At least one of the groups represents nitrogen; L １ ~L ３ each independently represents a substituted or unsubstituted arylene group having 6 to 30 carbon atoms or a substituted or unsubstituted heteroarylene group having 1 to 30 carbon atoms; Ar １ is a heteroaryl group represented by the general formula (Ge1-1), and Ar ２ and Ar ３ each independently represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, and Ar １ represents any one of the heteroaryl groups represented by the general formula (Ge1-1), l, m, and n each independently represent an integer of 0 to 4, and when l, m, and n are 2 or more, L １ , L ２ and L ３ may be the same or different. In addition, in the general formula (Ge1-1), X represents a sulfur atom or an oxygen atom, R １ ~R １６ any one of which represents a bond between the general formula (Ge1), and the rest each independently represents any one of hydrogen (including deuterium), a substituted or unsubstituted silyl group, a cyano group, a nitro group, a substituted or unsubstituted boron group, a substituted or unsubstituted carbonyl group, a substituted or unsubstituted aryloxy group having 6 to 30 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted haloalkyl group having 1 to 10 carbon atoms, fluorine, a substituted or unsubstituted alkyl group having 1 to 8 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, and a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms. (In the above general formula (Gh1), ​​Ar ４ represents a substituted or unsubstituted fluorenyl group or a substituted or unsubstituted spirobi[9H-fluorenyl]-yl group; Ar ５ represents any one of a substituted or unsubstituted aryl group having 6 to 30 carbon atoms and a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms; B １ represents any one of a substituted or unsubstituted dibenzofuranyl group, a substituted or unsubstituted dibenzothiophenyl group, a substituted or unsubstituted benzonaphthofuranyl group, a substituted or unsubstituted benzonaphthothiophenyl group, a substituted or unsubstituted dinaphthofuranyl group, and a substituted or unsubstituted dinaphthothiophenyl group. ４ ~L ６ each independently represents a substituted or unsubstituted arylene group having 6 to 30 carbon atoms or a substituted or unsubstituted heteroarylene group having 1 to 30 carbon atoms; α, β, and γ each independently represent an integer of 0 to 4; when α, β, and γ are 2 or more, L ４ , L ５ and L ６ may be the same or different.) 　 a first group of electrodes formed on the same insulating surface; a second electrode facing the first electrode group; a first layer group located between the first electrode group and the second electrode; and one organic semiconductor device among a plurality of organic semiconductor devices included in an organic semiconductor device group, the first electrode group includes a plurality of first electrodes each of which is independent for each of the plurality of organic semiconductor devices; the first layer group includes a plurality of first layers each of which is independent for each of the plurality of organic semiconductor devices; the second electrode being a continuous conductive layer shared by the plurality of organic semiconductor devices; The organic semiconductor device comprises: a first electrode which is one of the first electrode group, the second electrode, and a first layer which is one of the first layer group; the second electrode and the first layer overlap the first electrode; the first layer contains an organic compound represented by general formula (Ge1) and an organic compound represented by general formula (Gh1), An organic semiconductor device, wherein a distance between the first layer of the organic semiconductor device and a first layer of another organic semiconductor device adjacent to the organic semiconductor device is 0.1 μm or more and 5 μm or less. (In the general formula (Ge1), A １ or A ３ Each independently represents a nitrogen atom or a carbon atom; A １ or A ３ At least one of the groups represents nitrogen; L １ ~L ３ each independently represents a substituted or unsubstituted arylene group having 6 to 30 carbon atoms or a substituted or unsubstituted heteroarylene group having 1 to 30 carbon atoms; Ar １ is a heteroaryl group represented by the general formula (Ge1-1), and Ar ２ and Ar ３ each independently represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, and Ar １ represents any one of the heteroaryl groups represented by the general formula (Ge1-1), l, m, and n each independently represent an integer of 0 to 4, and when l, m, and n are 2 or more, L １ , L ２ and L ３ may be the same or different. In addition, in the general formula (Ge1-1), X represents a sulfur atom or an oxygen atom, R １ ~R １６ any one of which represents a bond between the general formula (Ge1), and the rest each independently represents any one of hydrogen (including deuterium), a substituted or unsubstituted silyl group, a cyano group, a nitro group, a substituted or unsubstituted boron group, a substituted or unsubstituted carbonyl group, a substituted or unsubstituted aryloxy group having 6 to 30 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted haloalkyl group having 1 to 10 carbon atoms, fluorine, a substituted or unsubstituted alkyl group having 1 to 8 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, and a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms. (In the above general formula (Gh1), ​​Ar ４ represents a substituted or unsubstituted fluorenyl group or a substituted or unsubstituted spirobi[9H-fluorenyl]-yl group; Ar ５ represents any one of a substituted or unsubstituted aryl group having 6 to 30 carbon atoms and a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms; B １ represents any one of a substituted or unsubstituted dibenzofuranyl group, a substituted or unsubstituted dibenzothiophenyl group, a substituted or unsubstituted benzonaphthofuranyl group, a substituted or unsubstituted benzonaphthothiophenyl group, a substituted or unsubstituted dinaphthofuranyl group, and a substituted or unsubstituted dinaphthothiophenyl group. ４ ~L ６ each independently represents a substituted or unsubstituted arylene group having 6 to 30 carbon atoms or a substituted or unsubstituted heteroarylene group having 1 to 30 carbon atoms; α, β, and γ each independently represent an integer of 0 to 4; when α, β, and γ are 2 or more, L ４ , L ５ and L ６ may be the same or different.) 　 a first group of electrodes formed on the same insulating surface; a second electrode facing the first electrode group; a first layer group located between the first electrode group and the second electrode, the first electrode group includes a plurality of first electrodes each of which is independent for each of the plurality of light emitting devices; the first layer group includes a plurality of first layers each of which is independent for each of the plurality of light emitting devices; the second electrode being a continuous conductive layer shared by the plurality of light emitting devices; The light emitting device comprises: a first electrode which is one of the first electrode group, the second electrode, and a first layer which is one of the first layer group; the second electrode and the first layer overlap the first electrode; the first layer includes a light-emitting layer; the first layer contains an organic compound represented by general formula (Ge1) and an organic compound represented by general formula (Gh1), A light-emitting device, wherein the distance between the first layer of the light-emitting device and a first layer of another light-emitting device adjacent to the light-emitting device is 0.1 μm or more and 5 μm or less. (In the general formula (Ge1), A １ or A ３ Each independently represents a nitrogen atom or a carbon atom; A １ or A ３ At least one of the groups represents nitrogen; L １ ~L ３ each independently represents a substituted or unsubstituted arylene group having 6 to 30 carbon atoms or a substituted or unsubstituted heteroarylene group having 1 to 30 carbon atoms; Ar １ is a heteroaryl group represented by the general formula (Ge1-1), and Ar ２ and Ar ３ each independently represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, and Ar １ represents any one of the heteroaryl groups represented by the general formula (Ge1-1), l, m, and n each independently represent an integer of 0 to 4, and when l, m, and n are 2 or more, L １ , L ２ and L ３ may be the same or different. In addition, in the general formula (Ge1-1), X represents a sulfur atom or an oxygen atom, R １ ~R １６ any one of which represents a bond between the general formula (Ge1), and the rest each independently represents any one of hydrogen (including deuterium), a substituted or unsubstituted silyl group, a cyano group, a nitro group, a substituted or unsubstituted boron group, a substituted or unsubstituted carbonyl group, a substituted or unsubstituted aryloxy group having 6 to 30 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted haloalkyl group having 1 to 10 carbon atoms, fluorine, a substituted or unsubstituted alkyl group having 1 to 8 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, and a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms. (In the above general formula (Gh1), ​​Ar ４ represents a substituted or unsubstituted fluorenyl group or a substituted or unsubstituted spirobi[9H-fluorenyl]-yl group; Ar ５ represents any one of a substituted or unsubstituted aryl group having 6 to 30 carbon atoms and a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms; B １ represents any one of a substituted or unsubstituted dibenzofuranyl group, a substituted or unsubstituted dibenzothiophenyl group, a substituted or unsubstituted benzonaphthofuranyl group, a substituted or unsubstituted benzonaphthothiophenyl group, a substituted or unsubstituted dinaphthofuranyl group, and a substituted or unsubstituted dinaphthothiophenyl group. ４ ~L ６ each independently represents a substituted or unsubstituted arylene group having 6 to 30 carbon atoms or a substituted or unsubstituted heteroarylene group having 1 to 30 carbon atoms; α, β, and γ each independently represent an integer of 0 to 4; when α, β, and γ are 2 or more, L ４ , L ５ and L ６ may be the same or different.) 　 a first light emitting device and a second light emitting device formed on an insulating surface; the first light emitting device has a first electrode, a second electrode, and a first organic compound layer located between the first electrode and the second electrode; the second light emitting device has a third electrode, a fourth electrode, and a second organic compound layer located between the third electrode and the fourth electrode; the first organic compound layer has a first light-emitting layer, the second organic compound layer has a second light-emitting layer, the second electrode and the fourth electrode are part of a single continuous conductive layer; a distance between the first organic compound layer and the second organic compound layer is 0.1 μm or more and 5 μm or less; A display device, wherein one or both of the first organic compound layer and the second organic compound layer contain an organic compound represented by a general formula (Ge1) and an organic compound represented by a general formula (Gh1). (In the general formula (Ge1), A １ or A ３ Each independently represents a nitrogen atom or a carbon atom; A １ or A ３ At least one of the groups represents nitrogen; L １ ~L ３ each independently represents a substituted or unsubstituted arylene group having 6 to 30 carbon atoms or a substituted or unsubstituted heteroarylene group having 1 to 30 carbon atoms; Ar １ is a heteroaryl group represented by the general formula (Ge1-1), and Ar ２ and Ar ３ each independently represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, and Ar １ represents any one of the heteroaryl groups represented by the general formula (Ge1-1), l, m, and n each independently represent an integer of 0 to 4, and when l, m, and n are 2 or more, L １ , L ２ and L ３ may be the same or different. In addition, in the general formula (Ge1-1), X represents a sulfur atom or an oxygen atom, R １ ~R １６ any one of which represents a bond between the general formula (Ge1), and the rest each independently represents any one of hydrogen (including deuterium), a substituted or unsubstituted silyl group, a cyano group, a nitro group, a substituted or unsubstituted boron group, a substituted or unsubstituted carbonyl group, a substituted or unsubstituted aryloxy group having 6 to 30 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted haloalkyl group having 1 to 10 carbon atoms, fluorine, a substituted or unsubstituted alkyl group having 1 to 8 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, and a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms. (In the above general formula (Gh1), ​​Ar ４ represents a substituted or unsubstituted fluorenyl group or a substituted or unsubstituted spirobi[9H-fluorenyl]-yl group; Ar ５ represents any one of a substituted or unsubstituted aryl group having 6 to 30 carbon atoms and a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms; B １ represents any one of a substituted or unsubstituted dibenzofuranyl group, a substituted or unsubstituted dibenzothiophenyl group, a substituted or unsubstituted benzonaphthofuranyl group, a substituted or unsubstituted benzonaphthothiophenyl group, a substituted or unsubstituted dinaphthofuranyl group, and a substituted or unsubstituted dinaphthothiophenyl group. ４ ~L ６ each independently represents a substituted or unsubstituted arylene group having 6 to 30 carbon atoms or a substituted or unsubstituted heteroarylene group having 1 to 30 carbon atoms; α, β, and γ each independently represent an integer of 0 to 4; when α, β, and γ are 2 or more, L ４ , L ５ and L ６ may be the same or different.) 　 a light emitting device and a light receiving device formed on an insulating surface; the light emitting device has a first electrode, a second electrode, and a first organic compound layer located between the first electrode and the second electrode; the light-receiving device has a third electrode, a fourth electrode, and a second organic compound layer located between the third electrode and the fourth electrode; the first organic compound layer has a light-emitting layer, the second organic compound layer has a photoelectric conversion layer, the second electrode and the fourth electrode are part of a single continuous conductive layer; a distance between the first organic compound layer and the second organic compound layer is 0.1 μm or more and 5 μm or less; A display device, wherein one or both of the first organic compound layer and the second organic compound layer contain an organic compound represented by a general formula (Ge1) and an organic compound represented by a general formula (Gh1). (In the general formula (Ge1), A １ or A ３ Each independently represents a nitrogen atom or a carbon atom; A １ or A ３ At least one of the groups represents nitrogen; L １ ~L ３ each independently represents a substituted or unsubstituted arylene group having 6 to 30 carbon atoms or a substituted or unsubstituted heteroarylene group having 1 to 30 carbon atoms; Ar １ is a heteroaryl group represented by the general formula (Ge1-1), and Ar ２ and Ar ３ each independently represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, and Ar １ represents any one of the heteroaryl groups represented by the general formula (Ge1-1), l, m, and n each independently represent an integer of 0 to 4, and when l, m, and n are 2 or more, L １ , L ２ and L ３ may be the same or different. In addition, in the general formula (Ge1-1), X represents a sulfur atom or an oxygen atom, R １ ~R １６ any one of which represents a bond between the general formula (Ge1), and the rest each independently represents any one of hydrogen (including deuterium), a substituted or unsubstituted silyl group, a cyano group, a nitro group, a substituted or unsubstituted boron group, a substituted or unsubstituted carbonyl group, a substituted or unsubstituted aryloxy group having 6 to 30 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted haloalkyl group having 1 to 10 carbon atoms, fluorine, a substituted or unsubstituted alkyl group having 1 to 8 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, and a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms. (In the above general formula (Gh1), ​​Ar ４ represents a substituted or unsubstituted fluorenyl group or a substituted or unsubstituted spirobi[9H-fluorenyl]-yl group; Ar ５ represents any one of a substituted or unsubstituted aryl group having 6 to 30 carbon atoms and a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms; B １ represents any one of a substituted or unsubstituted dibenzofuranyl group, a substituted or unsubstituted dibenzothiophenyl group, a substituted or unsubstituted benzonaphthofuranyl group, a substituted or unsubstituted benzonaphthothiophenyl group, a substituted or unsubstituted dinaphthofuranyl group, and a substituted or unsubstituted dinaphthothiophenyl group. ４ ~L ６ each independently represents a substituted or unsubstituted arylene group having 6 to 30 carbon atoms or a substituted or unsubstituted heteroarylene group having 1 to 30 carbon atoms; α, β, and γ each independently represent an integer of 0 to 4; when α, β, and γ are 2 or more, L ４ , L ５ and L ６ may be the same or different.) 　 In any one of claims 2, 3 and 6, B １ a substituted or unsubstituted dibenzofuranyl group, a substituted or unsubstituted dibenzothiophenyl group, a substituted or unsubstituted benzo[b]naphtho[1,2-d]furanyl group, a substituted or unsubstituted benzo[b]naphtho[2,1-b]furanyl group, a substituted or unsubstituted benzo[b]naphtho[2,3-d]furanyl group, a substituted or unsubstituted benzo[b]naphtho[2,1-d]thiophenyl group, a substituted or unsubstituted benzo[b]naphtho[2,1-b]thiophenyl group, a substituted or unsubstituted benzo[b]naphtho[2,3-d]thiophenyl group, a substituted or unsubstituted dinaphtho[1,2-d:1',2'-d]furanyl group, a substituted or unsubstituted dinaphtho[1,2-d:2',1'-b]furanyl group, a substituted or unsubstituted dinaphtho[1,2-d:2',3'-d]furanyl group, Substituted or unsubstituted dinaphtho[2,1-b:2',1'-b]furanyl group, substituted or unsubstituted dinaphtho[2,1-b:2',3'-d]furanyl group, substituted or unsubstituted dinaphtho[2,3-d:2',3'-d]furanyl group, substituted or unsubstituted dinaphtho[1,2-d:1',2'-d]thiophenyl group, substituted or unsubstituted dinaphtho[1,2-d:2',1'-b]thio A light-emitting device comprising any one of a phenyl group, a substituted or unsubstituted dinaphtho[1,2-d:2',3'-d]thiophenyl group, a substituted or unsubstituted dinaphtho[2,1-b:2',1'-b]thiophenyl group, a substituted or unsubstituted dinaphtho[2,1-b:2',3'-d]thiophenyl group, and a substituted or unsubstituted dinaphtho[2,3-d:2',3'-d]thiophenyl group.