Semiconductor chip testing methods

Abstract

Inside the thermo-hygrostat (1), an evaporator (3) generates water vapor from a mixture of pure water and an aqueous solution. A semiconductor chip (8) is placed inside the thermo-hygrostat (1) where water vapor has been generated, and a bias is applied to the semiconductor chip (8) to determine whether the semiconductor chip (8) has experienced a short circuit. The conductivity of the water vapor is measured by a conductivity meter (11), and the amount of pure water and the amount of aqueous solution supplied to the evaporator (3) are controlled so that the conductivity remains constant.

Description

[Technical field]

[0001] The present disclosure relates to a method for testing a semiconductor chip. [Background technology]

[0002] In order to meet the demand for lowering the cost of semiconductor products, inexpensive non-hermetic packages are being adopted, and therefore it is required to ensure that the semiconductor chips themselves are moisture-resistant. Moisture resistance tests are performed by applying a bias to the semiconductor chips in a high-humidity, high-temperature environment in a thermo-hygrostat. In such thermo-hygrostats, pure water is generally used to obtain high humidity. However, there is a problem of deterioration due to impurities or resin components generated from the environment in which the chips are mounted, so it is being considered to perform the test in an environment containing impurities. For example, an accelerated moisture resistance test can be performed by deteriorating the semiconductor chips in a short time using an aqueous solution in which corrosive substances such as NaCl and KCl are added to distilled water (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 63-175778 Summary of the Invention [Problem to be solved by the invention]

[0004] In a moisture resistance test, the surface of a semiconductor chip is directly exposed to a high humidity atmosphere. Therefore, impurities contained in the water vapor in a thermo-hygrostat chamber have a significant effect on the deterioration of the semiconductor chip. However, while conventional technology controls the impurity concentration of the aqueous solution, it is not possible to control the impurity concentration of the water vapor in the thermo-hygrostat chamber. In addition, since impurities remain in the thermo-hygrostat chamber, the impurity concentration of the water vapor changes for each test. Therefore, it is difficult to accurately evaluate the failure time (lifespan) of a semiconductor chip using conventional technology.

[0005] The present disclosure has been made to solve the above-mentioned problems, and has an object to provide a semiconductor chip testing method capable of evaluating the failure time of a semiconductor chip with high accuracy. [Means for solving the problem]

[0006] The method for testing semiconductor chips according to the present disclosure comprises the steps of: generating water vapor from a mixture of pure water and an aqueous solution by an evaporator inside a thermostatic and humidity chamber; and placing a semiconductor chip inside the thermostatic and humidity chamber where the water vapor has been generated, applying a bias to the semiconductor chip, and determining whether or not the semiconductor chip has suffered a short-circuit failure; and is characterized in that the conductivity of the water vapor is measured by a conductivity meter, and the amount of pure water and the amount of aqueous solution supplied to the evaporator are controlled so that the conductivity is constant. Effect of the Invention

[0007] In the present disclosure, an evaporator generates water vapor from a mixture of pure water and an aqueous solution inside a thermo-hygrostat, and the amount of pure water and the amount of aqueous solution supplied to the evaporator are controlled so that the conductivity of the water vapor measured by a conductivity meter is constant. This makes it possible to control the impurity concentration of the water vapor inside the thermo-hygrostat to a constant value, thereby enabling the failure time of semiconductor chips to be evaluated with high accuracy. [Brief description of the drawings]

[0008] [Figure 1] FIG. 1 is a diagram showing a moisture resistance test apparatus according to a first embodiment. [Diagram 2] FIG. 1 is a diagram showing a conductivity meter according to a first embodiment. [Diagram 3] FIG. 13 is a graph showing the relationship between the conductivity of water vapor in a tank and the time to failure of a semiconductor chip. [Figure 4] FIG. 11 is a diagram showing a conductivity meter according to a second embodiment. [Diagram 5] FIG. 5 is a cross-sectional view taken along line I-II of FIG. [Figure 6] FIG. 2 is a top view showing a semiconductor chip. [Figure 7] FIG. 7 is a cross-sectional view taken along line I-II in FIG. [Figure 8] FIG. 11 is a cross-sectional view showing a modified example of the semiconductor chip according to the second embodiment. [Figure 9] FIG. 11 is a cross-sectional view showing a modified example of the conductivity meter according to the second embodiment. [Figure 10] FIG. 11 is a diagram showing a moisture resistance test apparatus according to a third embodiment. [Figure 11] FIG. 13 is a diagram showing a moisture resistance test apparatus according to a fourth embodiment. [Figure 12] FIG. 13 is a diagram showing a moisture resistance test apparatus according to a fifth embodiment. [Figure 13] FIG. 13 is a diagram showing a moisture resistance test device according to a sixth embodiment. [Figure 14] FIG. 13 is a diagram showing a moisture resistance test apparatus according to a seventh embodiment. [Figure 15] FIG. 13 is a diagram showing a moisture resistance test apparatus according to an eighth embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] A semiconductor chip testing method according to an embodiment will be described with reference to the drawings. The same or corresponding components are designated by the same reference numerals, and repeated description may be omitted.

[0010] First embodiment Fig. 1 is a diagram showing a humidity resistance test apparatus according to embodiment 1. A heater 2 and an evaporator 3 are provided inside a temperature and humidity chamber 1. The temperature inside the temperature and humidity chamber 1 is set to 85 to 130°C by the heater 2. The humidity inside the temperature and humidity chamber 1 is set to 85% by the evaporator 3 that generates water vapor.

[0011] A pure water tank 4 and an aqueous solution tank 5 are provided outside the thermo-hygrostat 1. A pure water pump 6 supplies the pure water contained in the pure water tank 4 to the evaporator 3. A NaCl aqueous solution pump 7 supplies the NaCl aqueous solution contained in the aqueous solution tank 5 to the evaporator 3. The evaporator 3 generates water vapor by heating a mixture of the pure water and aqueous solution stored in a container using a heater. However, the evaporator 3 may generate water vapor by ultrasonic vibration.

[0012] A semiconductor chip 8 is mounted on a test package 9 and placed in a temperature and humidity chamber 1. The test package 9 has a metallic package body 9a, terminals 9b and 9c, and an insulating ceramic 9d that insulates and separates the package body 9a from the terminals 9b and 9c. The semiconductor chip 8 is mounted on the package body 9a, and the input electrode 8a of the semiconductor chip 8 is wire-connected to the terminal 9b, and the output electrode 8b is wire-connected to the terminal 9c. Since no resin material is used in the test package 9, impurities that deteriorate the semiconductor chip 8 are hardly generated from the test package 9.

[0013] A power supply device 10 for applying a bias is provided outside the thermo-hygrostat 1. The power supply device 10 applies a bias to the semiconductor chip 8 via a terminal 9b, and monitors the output current of the semiconductor chip 8 via a terminal 9c to determine whether the semiconductor chip 8 has a short circuit failure. Specifically, the power supply device 10 determines that the semiconductor chip 8 has failed when the output of the semiconductor chip 8 falls below a predetermined value. When the semiconductor chip 8 fails, the wiring metal of the semiconductor chip 8 migrates and shorts out, causing the semiconductor chip 8 to stop working. Alternatively, depending on the structure of the semiconductor chip 8, the wiring metal may corrode and become highly resistive, causing the semiconductor chip 8 to no longer output. Note that it is not essential to perform a failure determination during the test in the thermo-hygrostat 1, and the semiconductor chip 8 may be removed from the thermo-hygrostat 1 before the failure determination.

[0014] The impurities contained in the aqueous solution are not limited to NaCl, but may be KCl, NaBr, etc. These are substances that generate ions such as halogens, Na ions, Cl ions, K ions, Br ions, etc. Among these, halogen ions are corrosive substances that cause metal corrosion or ion migration, and are the most influential in causing failures of the semiconductor chip 8. However, Na ions, Cl ions, K ions, and Br ions increase electrical conductivity, and leakage current between electrodes promotes corrosion, so all ions, not just halogen ions, can affect failures.

[0015] When the concentration of impurity ions contained in water vapor increases, the conductivity of the water vapor increases. By measuring the conductivity of water vapor, the impurity concentration of water vapor can be indirectly measured. Therefore, the conductivity meter 11 measures the conductivity of water vapor inside the thermo-hygrostat 1. The control unit 12 controls the pure water pump 6 and the aqueous solution pump 7 according to the measurement result of the conductivity meter 11 to control the amount of pure water and the amount of NaCl aqueous solution supplied to the evaporator 3. Specifically, the control unit 12 controls the amount of pure water and the amount of aqueous solution supplied to the evaporator 3 so that the conductivity of the water vapor measured by the conductivity meter 11 is constant. This makes it possible to control the impurity concentration of water vapor inside the thermo-hygrostat 1 to be constant.

[0016] 2 is a diagram showing the conductivity meter according to the first embodiment. Cooling water is run through the inside of the vapor sampling plate 13 to cool the water vapor below the saturated vapor pressure and condense it to generate condensed water 14. The condensed water 14 is collected in a vapor collection dish 15. The conductivity meter 11 measures the conductivity of the water vapor by passing an electric current through the condensed water 14 via electrodes immersed in the condensed water 14. The collected condensed water 14 overflows from the vapor collection dish 15 and is replaced by newly condensed condensed water 14. This makes it possible to measure the change in the conductivity of the water vapor inside the thermo-hygrostat 1.

[0017] 3 is a diagram showing the relationship between the conductivity of the water vapor in the chamber and the failure time of the semiconductor chip. The time from the start of the test until the semiconductor chip 8 fails strongly depends on the conductivity of the water vapor in the chamber. In this embodiment, the conductivity of the water vapor is controlled to a constant value, so that the failure time of the semiconductor chip 8 under those conditions can be accurately evaluated.

[0018] As described above, in this embodiment, the evaporator 3 generates water vapor from a mixture of pure water and an aqueous solution inside the thermo-hygrostat 1, and the amount of pure water and the amount of aqueous solution supplied to the evaporator 3 are controlled so that the conductivity of the water vapor measured by the conductivity meter 11 is constant. This allows the impurity concentration of the water vapor inside the thermo-hygrostat 1 to be controlled to a constant value, so that the failure time of the semiconductor chip 8 can be evaluated with high accuracy. It is also possible to investigate the relationship between the impurity concentration of the water vapor and the failure time of the semiconductor chip 8. It is also possible to perform an accelerated test in which the time to failure of the semiconductor chip 8 is shortened by increasing the impurity concentration. The life of the semiconductor chip 8 in the actual operating environment can be predicted from the results of this accelerated test.

[0019] Embodiment 2 Fig. 4 is a diagram showing a conductivity meter according to the second embodiment. Fig. 5 is a cross-sectional view taken along line I-II in Fig. 4. A SiN film 17 is formed on a substrate 16, and comb-shaped counter electrodes 18 and 19 are formed on the SiN film 17. There is no device for condensing water vapor, such as the vapor sampling plate 13 in the first embodiment.

[0020] When moisture containing impurity ions adheres to the surface of substrate 16, a leakage current flows to counter electrodes 18, 19. As the amount of ions increases, the conductivity increases and the leakage current increases. Therefore, conductivity meter 11 of this embodiment measures the conductivity of water vapor by applying a voltage between counter electrodes 18, 19 and measuring the leakage current flowing through counter electrodes 18, 19. Control unit 12 controls the amount of pure water and the amount of aqueous solution supplied to evaporator 3 so that the leakage current measured by conductivity meter 11 is constant. In addition, the relationship between the measured leakage current and the evaluation result of semiconductor chip 8 by power supply device 10 is investigated. The other configurations and effects are the same as those of embodiment 1.

[0021] The opposing electrodes 18, 19 may be a pair of electrodes, but by forming the opposing electrodes 18, 19 in a comb shape, the length of the opposing electrodes can be secured and the detection sensitivity of the leakage current can be improved. Also, the same voltage as that applied to the electrodes 8a, 8b of the semiconductor chip 8 may be applied to the opposing electrodes 18, 19, or the detection sensitivity may be improved by increasing the voltage applied to the opposing electrodes 18, 19.

[0022] The metal of the positive electrode becomes positive ions through an electrochemical reaction. The positive ions move to the negative electrode, where they lose electrons and metal is precipitated. If the amount of metal precipitated at the negative electrode increases, it will short-circuit with the positive electrode. Therefore, the voltage applied between the counter electrodes 18, 19 may be alternating current. This makes it difficult for metal to precipitate, and therefore makes it possible to prevent short-circuits caused by corrosion of the counter electrodes 18, 19.

[0023] Fig. 6 is a top view showing a semiconductor chip. Fig. 7 is a cross-sectional view taken along line I-II in Fig. 6. In the semiconductor chip 8, a gate electrode 21, a source electrode 22, and a drain electrode 23 are formed on a semiconductor substrate 20. A SiN film 24 protects the surface of the semiconductor substrate 20 so as to cover these electrodes. Au electrodes 25 and 26 are formed on the SiN film 24 and are connected to the source electrode 22 and the drain electrode 23, respectively, through vias that penetrate the SiN film 24.

[0024] The leakage current that causes the failure of the semiconductor chip 8 flows between the Au electrodes 25, 26 through the surface of the SiN film 24, and therefore depends on the element surface and the surface electrodes. Therefore, the counter electrodes 18, 19 are made of the same material as the Au electrodes 25, 26 of the semiconductor chip 8, and are formed in the same process. The SiN film 17 on the surface of the substrate 16 is made of the same material as the SiN film 24 on the surface of the semiconductor chip 8, and is formed in the same process. As a result, the moisture adsorbed on the surface of the conductivity meter 11 is the same as that on the surface of the semiconductor chip 8, and the leakage current on the surface of the semiconductor chip 8 can be reproduced on the surface of the conductivity meter 11. The conductivity meter 11 measures the leakage current flowing between the counter electrodes 18, 19 through the surface of the SiN film 17, and the failure time of the semiconductor chip 8 can be evaluated with even greater accuracy.

[0025] FIG. 8 is a cross-sectional view showing a modified semiconductor chip according to the second embodiment. FIG. 9 is a cross-sectional view showing a modified conductivity meter according to the second embodiment. When a polyimide resin film 27 is formed on the outermost surface of the semiconductor chip 8, the amount of moisture containing impurities increases at the interface between the polyimide resin film 27 and the SiN film 17, and leakage current may occur. Therefore, a polyimide resin film 28 is also formed on the outermost surface of the conductivity meter 11. Since the surface structure of the conductivity meter 11 is the same as that of the semiconductor chip 8, the leakage current on the surface of the semiconductor chip 8 can be reproduced on the surface of the conductivity meter 11.

[0026] Third embodiment 10 is a diagram showing a moisture resistance test apparatus according to the third embodiment. In the first and second embodiments, the evaporator 3 generates water vapor from a mixture of pure water and an aqueous solution, but the evaporator 3 in this embodiment generates water vapor from pure water. A resin material 29 separated from the semiconductor chip 8 is placed inside the thermo-hygrostat 1. The resin material 29 is placed near the semiconductor chip 8 and is exposed to the same temperature and humidity as the semiconductor chip 8.

[0027] When the inside of the thermo-hygrostat 1 is subjected to high humidity and high temperature conditions, impurities are generated from the resin material 29 and are taken in by the water vapor inside the thermo-hygrostat 1. Exposing the surface of the semiconductor chip 8 to water vapor containing impurities accelerates the deterioration of the semiconductor chip 8. By adjusting the temperature and humidity inside the thermo-hygrostat 1, the amount of impurities in the water vapor can be adjusted.

[0028] By using the same material as the mold resin or resin substrate used in the actual product as the resin material 29, it is possible to examine the effects of the same impurities as in the product. The resin material 29 is free of organic acids, halogens, Na + This embodiment is effective when the semiconductor chip 8 and the resin material 29 contain multiple impurities such as those mentioned above and it is not possible to identify which substance is responsible for the deterioration. In addition, since the semiconductor chip and the resin material are exposed to the same temperature and humidity in the product, this embodiment is effective when the semiconductor chip 8 and the resin material 29 are controlled to the same temperature.

[0029] For example, when a semiconductor chip is mounted in an open resin package and tested, various influences are generated when the resin package is formed, so it is not possible to examine only the influence of the resin. In contrast, in this embodiment, the semiconductor chip 8 is not mounted in a resin package, but is introduced into the thermo-hygrostat 1 together with a resin material 29 separated from the semiconductor chip 8 for testing. This makes it possible to extract purely the influence of the resin.

[0030] Fourth embodiment 11 is a diagram showing a moisture resistance test apparatus according to embodiment 4. In this embodiment, a semiconductor chip 8 and a resin material 29 are mounted in a test package 9 having a through hole, and the package is placed inside a thermo-hygrostat 1.

[0031] Water vapor is taken in through the through holes of the test package 9. When the inside of the temperature and humidity chamber 1 is subjected to high humidity and high temperature conditions, impurities are generated from the resin material 29. The inside of the test package 9 is an atmosphere containing a mixture of impurities generated from the resin material 29 and water vapor taken in through the through holes. The surface of the semiconductor chip 8 is exposed to this atmosphere. This makes it possible to perform a test that accurately simulates the influence of impurities in the usage environment of the semiconductor chip 8. Since the test package 9 has a small volume, an impurity environment can be created with a small amount of resin material 29. The other configurations and effects are the same as those of the third embodiment.

[0032] Table 1 shows the results of testing the GaNHEMT chip. The test was carried out for 96 hours at an internal temperature of 130°C and humidity of 85% in the thermo-hygrostat 1. Without the resin material 29, it was not possible to confirm the location of the short circuit. On the other hand, in this embodiment, a short circuit failure due to wiring migration, the same as that in the resin package product, could be reproduced in the short time of 96 hours. [Table 1] TIFF0007601296000001.tif46156

[0033] Fifth embodiment 12 is a diagram showing a moisture resistance test apparatus according to embodiment 5. The difference from embodiment 3 is that in this embodiment, a resin material 29 is heated by a heater 30 inside a thermo-hygrostat 1. The other configurations are the same as those in embodiment 3.

[0034] The amount of impurities generated from the resin material 29 can be controlled by the temperature of the heater 30. By separating the heater 2 and the heater 30, the temperature and the amount of impurities of the semiconductor chip 8 can be controlled independently.

[0035] The conductivity of the water vapor is measured by the conductivity meter 11, and the temperature of the heater 30 is controlled so that the conductivity is constant. This makes it possible to control the impurity concentration of the water vapor inside the thermo-hygrostat 1 to a constant value. Therefore, the time to failure of the semiconductor chip 8 can be evaluated with high accuracy.

[0036] Sixth embodiment FIG. 13 is a diagram showing a moisture resistance test apparatus according to the sixth embodiment. In this embodiment, the resin component is extracted with hot water and used as water supply for the evaporator. Inside the thermo-hygrostat 1, the evaporator 3 generates water vapor from an aqueous solution containing the resin component. Inside the thermo-hygrostat 1 where the water vapor has been generated, a semiconductor chip 8 is placed to determine whether or not the semiconductor chip 8 has suffered a short circuit failure. The other configurations are the same as those of the third embodiment.

[0037] When it is unknown which components of the resin used in a product affect its moisture resistance, the components contained in the resin can be tested. Also, by extracting the resin components with hot water, it is possible to efficiently extract only the impurities that dissolve in water.

[0038] Seventh embodiment FIG. 14 is a diagram showing a moisture resistance test apparatus according to the seventh embodiment. In this embodiment, an aqueous solution containing a resin component is used as the aqueous solution of the first embodiment. However, the concentration of the resin component is sufficiently higher than that of the aqueous solution of the sixth embodiment. Inside the thermo-hygrostat 1, the evaporator 3 generates water vapor from a mixture of pure water and an aqueous solution containing a resin component. The amount of pure water and the amount of aqueous solution supplied to the evaporator 3 are controlled so that the conductivity of the water vapor measured by the conductivity meter 11 is constant. This makes it possible to perform the test with the concentration of the resin component contained in the water vapor kept constant. The other configurations and effects are the same as those of the first embodiment.

[0039] Embodiment 8 FIG. 15 is a diagram showing a humidity resistance test apparatus according to the eighth embodiment. Inside the thermo-hygrostat 1, an evaporator 3 generates water vapor from pure water. Inside the thermo-hygrostat 1, a halogen gas generator 31 is provided. The halogen gas generator 31 generates halogen gas by electrolyzing an aqueous solution containing halogen ions. For example, NaCl or KCl is electrolyzed to generate Cl2 gas. Sodium bromide NaBr may also be electrolyzed to generate Br2. When the anode 31a and cathode 31b are placed in the aqueous solution and a current is applied, halogen gas is generated from the anode 31a side. When the aqueous solution is NaCl, the reaction on the anode 31a side is 2Cl - →Cl2+2e - When the aqueous solution is NaBr, the reaction on the anode 31a side is 2Br - →Br2+2e - The amount of halogen gas generated can be controlled by the electrolysis current.

[0040] A plurality of openings are provided on the upper surface of the halogen gas generator 31. The generated halogen gas spreads inside the thermo-hygrostat 1. The semiconductor chip 8 is placed inside the thermo-hygrostat 1 where the water vapor and halogen gas are generated. Halogen ions are corrosive substances that cause metal corrosion or ion migration. Therefore, the degradation of the semiconductor chip 8 is accelerated by adsorption of Cl ions or Br ions on the surface of the semiconductor chip 8. It is determined whether the semiconductor chip 8 has a short circuit failure. The conductivity of the water vapor is measured by the conductivity meter 11, and the control unit 12 controls the amount of halogen gas generated by the halogen gas generator 31 so that the conductivity is constant. As a result, the impurity concentration of the water vapor inside the thermo-hygrostat 1 can be controlled to a constant value as in the first embodiment, so that the failure time of the semiconductor chip 8 can be accurately evaluated. [Explanation of symbols]

[0041] 1 Thermo-hygrostat, 2, 30 Heater, 3 Evaporator, 8 Semiconductor chip, 9 Test package, 11 Conductivity meter, 16 Substrate, 18, 19 Counter electrode, 29 Resin material

Claims

1. The process involves an evaporator generating water vapor from a mixture of pure water and aqueous solution inside a constant temperature and humidity chamber, The process includes placing a semiconductor chip inside the constant temperature and humidity chamber where the water vapor is generated, applying a bias to the semiconductor chip, and determining whether the semiconductor chip has short-circuited. A method for testing a semiconductor chip, characterized by measuring the conductivity of the water vapor using a conductivity meter and controlling the amount of pure water and aqueous solution supplied to the evaporator so that the conductivity remains constant.

2. The method for testing a semiconductor chip according to claim 1, characterized in that the aqueous solution contains a substance that generates ions.

3. The method for testing a semiconductor chip according to claim 2, characterized in that the aqueous solution contains a substance that generates halogen ions.

4. The method for testing a semiconductor chip according to claim 1, characterized in that the aqueous solution contains a resin component.

5. A method for testing a semiconductor chip according to any one of claims 1 to 3, characterized in that the water vapor is cooled to below the saturated vapor pressure to cause condensation and generate condensed water, and the conductivity meter measures the conductivity of the water vapor by passing electricity through the condensed water.

6. The method for testing a semiconductor chip according to any one of claims 1 to 3, characterized in that the conductivity meter has a substrate and a counter electrode formed on the substrate, and the conductivity of the water vapor is measured by measuring the leakage current flowing through the counter electrode.

7. A process in which a resin material is placed inside a constant temperature and humidity chamber and an evaporator generates water vapor, The process includes a step of determining whether the semiconductor chip has short-circuited, by placing the semiconductor chip inside the constant temperature and humidity chamber where the water vapor is generated, without mounting it in a resin package. A method for testing a semiconductor chip, characterized in that the resin material is separated from the semiconductor chip.

8. The method for testing a semiconductor chip according to claim 7, characterized in that the semiconductor chip and the resin material are mounted in a test package having a through hole and placed inside the constant temperature and humidity chamber.

9. The temperature inside the constant temperature and humidity chamber is set by the first heater. The resin material is heated with a second heater different from the first heater. The semiconductor chip testing method according to claim 7, characterized in that the conductivity of the water vapor is measured by a conductivity meter, and the temperature of the second heater is controlled so that the conductivity remains constant.

10. A process in which an evaporator inside a constant temperature and humidity chamber generates water vapor from an aqueous solution containing organic acids, halogens, and resin components containing Na+, A method for testing a semiconductor chip, comprising the steps of: placing a semiconductor chip inside the constant temperature and humidity chamber where water vapor is generated; and determining whether the semiconductor chip has short-circuited.

11. The process involves an evaporator generating water vapor inside a constant temperature and humidity chamber, The process involves electrolyzing an aqueous solution containing halogen ions inside the constant temperature and humidity chamber to generate halogen gas, The process includes placing a semiconductor chip inside the constant temperature and humidity chamber where the water vapor and halogen gas are generated, and determining whether the semiconductor chip has short-circuited. A method for testing a semiconductor chip, characterized by independently controlling the amount of water vapor generated and the amount of halogen gas generated.

12. The semiconductor chip testing method according to claim 11, characterized in that the conductivity of the water vapor is measured by a conductivity meter, and the amount of halogen gas generated is controlled so that the conductivity remains constant.

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