Plating apparatus

Abstract

A plating apparatus is provided. This plating apparatus includes a plating bath, a substrate holder, an anode, and at least one resistor for electric field adjustment disposed between the anode and the substrate holder, each of the at least one resistor having a plurality of through holes communicating with the anode side and the substrate holder side, at least one resistor, and a resistor member for electric field adjustment disposed between the anode and the substrate holder, the resistor member having an inlet through which a fluid is introduced, being configured to change in volume by changing the amount or pressure of the fluid inside the resistor member, and the resistor member being installed so as not to block the plurality of through holes on the surface closest to the anode of the at least one resistor.

Description

Technical Field

[0001] This application relates to a plating apparatus.

Background Art

[0002] As an example of a plating apparatus using the electrolytic plating method, a so-called dip-type plating apparatus in which a substrate (for example, a semiconductor wafer) and an anode are opposed to each other in the horizontal direction is known (see, for example, Patent Document 1). Further, as another example of a plating apparatus using the electrolytic plating method, a cup-type plating apparatus is known (see, for example, Patent Document 2). In the cup-type plating apparatus, a substrate held by a substrate holder with the plating surface facing downward is immersed in a plating solution, and a voltage is applied between the substrate and the anode to deposit a conductive film (plating film) on the surface of the substrate.

[0003] In such plating apparatuses, generally, the substrate has electrical contacts at its peripheral portion. Due to the different distances from the electrical contacts, a potential difference may occur between the peripheral portion and the central portion of the substrate during the plating process, resulting in a bias in the plating current. Therefore, conventionally, in order to improve the uniformity of the thickness of the plating film formed on the substrate, it is known to arrange a resistor for electric field adjustment between the substrate and the anode. Further, in order to make the electric field adjustment more freely, a plating apparatus having variable hole sizes of the resistor has been proposed (see Patent Document 3).

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Patent Document 2

Patent Document 3

Summary of the Invention

Problems to be Solved by the Invention

[0005] In a plating apparatus, in addition to the distance relationship with the electrical contact, the thickness of the plating film may be uneven due to the resist pattern formed on the substrate. That is, when a certain amount of the area where the resist opening is not formed (non-opening area) is included in the plating surface of the substrate, the plating current does not flow in the non-opening area, and the plating current concentrates on the peripheral part of the non-opening area, resulting in an increase in the thickness of the plating film. As a specific example, when the resist opening is formed only in a substantially cross-shaped area on the substrate, the resist opening is not formed in the area outside the cross shape and the current does not flow, so the uniformity of the thickness of the plating film may be impaired. Here, for example, in Patent Document 1, in order to adjust the electric field between the anode and the substrate, an anode mask whose anode opening size can be adjusted is used. However, the conventional configuration is designed to cope with the variation in the plating film thickness caused by the configuration of the plating apparatus such as the electrical contact, and may not be able to sufficiently cope with the variation in the plating film thickness caused by the resist pattern of the substrate. Although it is conceivable to form a dummy opening in the non-opening area to make the thickness of the plating film uniform, the process for forming the dummy opening occurs, and unnecessary plating is formed in the dummy opening, which increases the cost of the plating process.

[0006] The present invention has been made in view of the above problems. One of its purposes is to propose a plating apparatus capable of improving the uniformity of the thickness of the plating film formed on the object to be plated.

Means for Solving the Problems

[0007] According to one aspect of the present invention, a plating apparatus is proposed. This plating apparatus includes a plating bath, a substrate holder configured to hold a substrate, an anode disposed in the plating bath so as to face the substrate held by the substrate holder, at least one resistor for electric field adjustment disposed between the anode and the substrate holder, each of the at least one resistor having a plurality of through holes communicating with the anode side and the substrate holder side, at least one resistor, and a resistor member for electric field adjustment disposed between the anode and the substrate holder, the resistor member having an inlet through which a fluid is introduced, being configured to change in volume by changing the amount or pressure of the fluid inside the resistor member, and the resistor member being installed so as not to block the plurality of through holes on the surface closest to the anode of the at least one resistor.

Brief Description of the Drawings

[0008]

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[0009] Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the drawings described below, the same or corresponding components are denoted by the same reference numerals, and redundant description is omitted.

[0010] First Embodiment <Overall Configuration of Plating Apparatus> FIG. 1 is a perspective view showing the overall configuration of the plating apparatus 1000 according to the present embodiment. FIG. 2 is a plan view showing the overall configuration of the plating apparatus 1000. As shown in FIGS. 1 and 2, the plating apparatus 1000 includes a load port 100, a transfer robot 110, an aligner 120, a pre-wet module 200, a pre-soak module 300, a plating module 400, a cleaning module 500, a spin rinse dryer 600, a transfer device 700, and a control module 800.

[0011] The load port 100 is a module for loading a substrate, which is an object to be plated and stored in a cassette such as a FOUP (not shown) in the plating apparatus 1000, or unloading the substrate from the plating apparatus 1000 to the cassette. In the present embodiment, four load ports 100 are arranged side by side in the horizontal direction, but the number and arrangement of the load ports 100 are arbitrary. The transfer robot 110 is a robot for transferring the substrate, and is configured to transfer the substrate between the load port 100, the aligner 120, and the transfer device 700. When the transfer robot 110 and the transfer device 700 transfer the substrate between them, the substrate can be transferred via a temporary placement table (not shown).

[0012] The aligner 120 is a module for aligning the positions of the orientation flat, notch, etc. of the substrate in a predetermined direction. In the present embodiment, two aligners 120 are arranged side by side in the horizontal direction, but the number and arrangement of the aligners 120 are arbitrary. The pre-wet module 200 wets the surface to be plated of the substrate before the plating process with a processing liquid (pre-wet liquid) such as pure water or degassed water, thereby replacing the air inside the pattern formed on the substrate surface with the processing liquid. The pre-wet module 200 is configured to perform a pre-wet process that makes it easier to supply the plating liquid inside the pattern by replacing the processing liquid inside the pattern with the plating liquid during plating. In the present embodiment, two pre-wet modules 200 are arranged one above the other in the vertical direction, but the number and arrangement of the pre-wet modules 200 are arbitrary.

[0013] The pre-soak module 300 is configured to perform a pre-soak process of cleaning or activating the plating surface by etching and removing an oxide film with a large electrical resistance present on the surface of a seed layer formed on the surface to be plated of the substrate before plating, for example, with a processing solution such as sulfuric acid or hydrochloric acid. In this embodiment, two pre-soak modules 300 are arranged side by side in the vertical direction, but the number and arrangement of the pre-soak modules 300 are arbitrary. The plating module 400 performs a plating process on the substrate. In this embodiment, there are two sets of 12 plating modules 400 arranged side by side in three rows in the vertical direction and four rows in the horizontal direction, for a total of 24 plating modules 400 provided, but the number and arrangement of the plating modules 400 are arbitrary.

[0014] The cleaning module 500 is configured to perform a cleaning process on the substrate to remove plating solution and the like remaining on the substrate after the plating process. In this embodiment, two cleaning modules 500 are arranged side by side in the vertical direction, but the number and arrangement of the cleaning modules 500 are arbitrary. The spin rinse dryer 600 is a module for drying the substrate by rotating it at high speed after the cleaning process. In this embodiment, two spin rinse dryers are arranged side by side in the vertical direction, but the number and arrangement of the spin rinse dryers are arbitrary. The transfer device 700 is a device for transferring the substrate between a plurality of modules in the plating apparatus 1000. The control module 800 is configured to control a plurality of modules of the plating apparatus 1000 and can be composed of, for example, a general computer or a dedicated computer having an input / output interface with an operator.

[0015] An example of a series of plating processes by the plating apparatus 1000 will be described. First, the substrate stored in the cassette is carried into the load port 100. Subsequently, the transfer robot 110 takes out the substrate from the cassette of the load port 100 and transfers the substrate to the aligner 120. The aligner 120 aligns the positions such as the orientation flat and notch of the substrate in a predetermined direction. The transfer robot 110 delivers the substrate whose direction has been aligned by the aligner 120 to the transfer device 700.

[0016] The transfer device 700 transfers the substrate received from the transfer robot 110 to the pre-wet module 200. The pre-wet module 200 performs a pre-wet process on the substrate. The transfer device 700 transfers the substrate subjected to the pre-wet process to the pre-soak module 300. The pre-soak module 300 performs a pre-soak process on the substrate. The transfer device 700 transfers the substrate subjected to the pre-soak process to the plating module 400. The plating module 400 performs a plating process on the substrate.

[0017] The transfer device 700 transfers the substrate subjected to the plating process to the cleaning module 500. The cleaning module 500 performs a cleaning process on the substrate. The transfer device 700 transfers the substrate subjected to the cleaning process to the spin rinse dryer 600. The spin rinse dryer 600 performs a drying process on the substrate. The transfer device 700 delivers the substrate subjected to the drying process to the transfer robot 110. The transfer robot 110 transfers the substrate received from the transfer device 700 to the cassette in the load port 100. Finally, the cassette containing the substrate is unloaded from the load port 100.

[0018] <Configuration of the plating module> Next, the configuration of the plating module 400 will be described. Since the 24 plating modules 400 in this embodiment have the same configuration, only one plating module 400 will be described. FIG. 3 is a longitudinal sectional view schematically showing the configuration of the plating module 400 of this embodiment. As shown in FIG. 3, the plating module 400 includes a plating bath 410 for accommodating the plating solution. The plating bath 410 includes a cylindrical inner bath 412 with an open upper surface and an outer bath 414 provided around the inner bath 412 so as to store the plating solution that has overflowed from the upper edge of the inner bath 412.

[0019] The plating module 400 includes a substrate holder 440 for holding the substrate Wf with the plating surface Wf-a facing downward. The substrate holder 440 also includes a power supply contact for supplying power to the substrate Wf from a power supply (not shown). The plating module 400 includes a lifting mechanism 442 for lifting and lowering the substrate holder 440. The plating module 400 also includes a rotation mechanism 448 for rotating the substrate holder 440 around the rotation axis Ax during plating. This rotation axis Ax preferably coincides with the central axis of the plating module 400. In the inner tank 412, anodes 430, anode masks 426, etc., which will be described later, are coaxially arranged around the central axis of the plating module 400. Hereinafter, the "radial direction" and the "circumferential direction" refer to the radial direction and the circumferential direction with respect to the rotation axis Ax. Also, a Z-axis is taken parallel to the rotation axis Ax, and X-axis and Y-axis perpendicular to each other are taken perpendicular to the Z-axis. The lifting mechanism 442 and the rotation mechanism 448 can be realized by known mechanisms such as motors, for example.

[0020] The plating apparatus 1000 is a cup-type electrolytic plating apparatus that immerses a substrate Wf (e.g., a semiconductor wafer) held by a substrate holder 440 with the plating surface Wf-a facing downward in a plating solution and applies a voltage between the substrate Wf and the anode 430 to deposit a conductive film on the surface of the substrate Wf. In one embodiment, by performing the plating process while rotating the substrate Wf, the thickness of the plating formed on the substrate Wf becomes more uniform.

[0021] The plating module 400 includes a membrane 420 that vertically separates the inside of the inner tank 412. The inside of the inner tank 412 is partitioned by the membrane 420 into a cathode region 422 and an anode region 424. The cathode region 422 and the anode region 424 are each filled with a plating solution. Although an example where the membrane 420 is provided is shown in this embodiment, the membrane 420 may not be provided.

[0022] An anode 430 is provided on the bottom surface of the inner tank 412 of the anode region 424. The anode 430 is disposed in the plating tank 410 so as to face the substrate Wf. Further, in the anode region 424, an anode mask 426 for adjusting the electric field between the anode 430 and the substrate Wf is disposed. The anode mask 426 is a substantially plate-shaped member made of, for example, a dielectric material, and is provided on the front surface (upper side) of the anode 430. The anode mask 426 has an anode opening 427 which is an opening through which the current flowing between the anode 430 and the substrate Wf passes. In the present embodiment, an example in which the anode mask 426 is provided is shown, but the anode mask 426 may not be provided. Further, the above-described membrane 420 may be provided at the anode opening 427.

[0023] A resistor 450 is disposed between the anode 430 and the substrate holder 440 in the cathode region 422. In the example of the present embodiment, the resistor 450 faces the membrane 420. The resistor 450 is a member for adjusting the electric field in the plating solution and for making the plating process uniform on the plated surface Wf-a of the substrate Wf. In the illustrated example, the resistor 450 has a cylindrical shape and is disposed such that the axial direction of the cylinder substantially coincides with the rotation axis Ax. The shape of the resistor 450 is not particularly limited as long as plating can be performed with a desired accuracy.

[0024] The resistor 450 is formed of a member having a higher electrical resistivity than the plating solution. This member is preferably a dielectric. The resistor 450 can contain metal or resin. The resistor 450 for electric field adjustment includes a first surface 451 on the anode side and a second surface 452 on the substrate holder side.

[0025] FIG. 4 is an enlarged bottom view schematically showing the first surface 451 on the anode side of the resistor 450. A plurality of through holes 453 are formed in the resistor 450. The through holes 453 penetrate between the first surface 451 and the second surface 452 of the resistor 450 and constitute a path for allowing the plating solution and ions in the plating solution to pass through. In other words, the resistor 450 connects, via the through holes 453, the cathode region 422 on the anode side of the resistor 450 and the cathode region 422 on the substrate holder side of the resistor 450 in such a manner that the plating solution and ions in the plating solution can move therebetween. Each of the plurality of through holes 453 communicates with the anode side and the substrate holder side of the resistor 450. In the example of FIG. 4, the through holes 453 are regularly arranged such that the distance between adjacent through holes 453 is constant. However, the pattern of the through holes 453 is not particularly limited as long as plating can be performed with a desired accuracy, and the through holes 453 may be randomly arranged.

[0026] The resistor 450 may have a porous structure formed by the plurality of through holes 453. With such a configuration, the holes are dispersed, and by adjusting the current passing through these holes, the thickness of the plating formed on the substrate Wf can be made uniform.

[0027] As shown in FIG. 3, the plating module 400 includes a resistance member 470. The resistance member 470 is a member for adjusting the electric field in the plating solution and for achieving uniformity in the plating process on the plating surface Wf-a of the substrate Wf. The resistance member 470 for adjusting the electric field is a member that can expand and contract. The resistance member 470 includes an inlet 473 into which a fluid is introduced, and is configured such that its volume changes by changing the amount or pressure of the fluid inside the resistance member 470. The resistance member 470 is configured to be able to transition between a contracted state and an expanded state having a larger volume than the contracted state. The type of the fluid is not particularly limited and can be a gas or a liquid. From the viewpoint of simplifying the configuration and reducing costs, the fluid can be air.

[0028] The plating module 400 includes an introduction pipe 475 and an adjustment module 476. The introduction pipe 475 is a pipe for introducing fluid into the resistance member 470, and is in fluid communication with the introduction port 473. The introduction pipe 475 is in fluid communication with the adjustment module 476 outside the plating tank 410. The adjustment module 476 includes a pump or a pressure regulator, etc., and adjusts the amount or pressure of the fluid inside the resistance member 470. As will be described later, the adjustment module 476 may be controlled by the control module 800 (FIG. 1).

[0029] The resistance member 470 includes a membrane member 477 and a cavity 478 surrounded by the membrane member 477 into which fluid is introduced. The introduction port 473 is formed in the membrane member 477, and the introduction port 473 and the cavity 478 are in communication. The material of the membrane member 477 is not particularly limited as long as it does not allow the plating solution to pass through and can be deformed so that the resistance member 470 expands and contracts. From the viewpoint of facilitating the expansion and contraction of the resistance member 470, the membrane member 477 preferably includes an elastic membrane, and such an elastic membrane preferably includes rubber or a silicone resin, and can include, for example, silicone rubber.

[0030] The resistance member 470 is disposed between the anode 430 and the resistor 450. The resistance member 470 can be disposed between the anode 430 and the resistor 450 in the direction in which the rotation axis Ax extends. In the cup-type plating module 400 according to the present embodiment, the resistance member 470 can be disposed between the anode 430 and the resistor 450 in the vertical direction. The resistance member 470 is preferably disposed between the anode mask 426 and the resistor 450. Also, as in the illustrated example, the resistance member 470 can be disposed between the membrane 420 and the resistor 450.

[0031] The resistance member 470 can be supported by a support member (not shown) and disposed in the plating solution. Such a support member is not particularly limited, but can be, for example, a filamentous, cord-like or rod-like member extending from the resistor 450. Alternatively, the resistance member 470 may be supported by a member extending from outside the plating tank 410 or the inner tank 412. Note that the resistance member 470 may be supported by the introduction pipe 475.

[0032] FIG. 5 is a schematic plan view of the resistance member 470. The resistance member 470 is preferably annular as will be described later. The radial range with respect to the rotation axis Ax where the resistance member 470 is disposed can be outside 50% from the rotation axis Ax in the radial direction to the outermost end of the resistor 450. Also, the range can be inside 90% from the rotation axis Ax in the radial direction to the outermost end of the resistor 450. In one embodiment, the inner diameter of the resistance member 470 is 50% - 70% of the diameter of the resistor 450 or the substrate Wf, preferably 55% - 65%. Also, in one embodiment, the outer diameter of the resistance member 470 is 70% - 90% of the diameter of the resistor 450 or the substrate Wf, preferably 80% - 90%. Thereby, for regions that are likely to cause a decrease in the uniformity of the plating thickness, the electric field can be efficiently adjusted, and the uniformity of the plating thickness formed on the substrate Wf can be further enhanced. Note that the shape and dimensions of the resistance member 470 are not particularly limited and can be appropriately set according to the position where it is desired to locally change the electric field during plating and the like.

[0033] FIGS. 6 and 7 are conceptual diagrams showing the electric field around the resistance member 470. FIG. 6 corresponds to a schematic longitudinal sectional view of the resistance member 470 in a contracted state, and FIG. 7 corresponds to a schematic longitudinal sectional view of the resistance member 470 in an expanded state. In FIGS. 6 and 7, the electric field is schematically indicated by the arrow Ar1. In the present embodiment, the resistance member 470 is configured to be expandable and contractible in the direction in which the rotation axis Ax of the substrate holder 440 extends. Thereby, a simpler configuration can be achieved compared to the case of expanding and contracting in other directions, and the electric field can be adjusted more precisely, or the manufacture of the resistance member 470 can be facilitated. In the resistance member 470, by disposing a member having rigidity on the surfaces other than the surface on the resistor side and preventing a part of the film-like member 477 from moving, the expanding and contracting directions can be set.

[0034] The electric field lines corresponding to the electric field directed from the anode 430 upward to the substrate holder 440 will go around the resistance member 470. In the example of FIG. 7 where the resistance member 470 is in an expanded state, the distance between the resistance member 470 and the resistor 450 is short, and the electric field lines do not go around sufficiently. Therefore, the electric field near the first surface 451 on the anode side of the resistor 450 is smaller at a position above the resistance member 470 than at a position where the resistance member 470 is not below. In this case, the resistance of the path passing through the position above the resistance member 470 becomes larger compared to the resistance of the path passing through the position where the resistance member 470 is not below. On the other hand, in the example of FIG. 6 where the resistance member 470 is in a contracted state, since there is a certain distance between the resistance member 470 and the resistor 450, the electric field lines go around the resistance member 470 to some extent. Therefore, near the first surface 451 on the anode side of the resistor 450, the influence of the resistance member 470 on the electric field can be reduced compared to the example of FIG. 6.

[0035] Therefore, by adjusting the volume of the resistance member 470, the local electric field in the plating solution, that is, the local plating current, can be adjusted. Thereby, the uniformity of the thickness of the plating film formed on the substrate Wf to be plated can be improved. In this way, the weakening of the electric field by the resistance member 470 is called shielding of the electric field by the resistance member 470.

[0036] The resistance member 470 can be installed on the first surface 451, which is the surface of the resistor 450 closest to the anode 430, so as not to block the plurality of through holes 453. Here, "installed so as not to block the plurality of through holes 453" means that the resistance member 470 does not block the through holes 453 even during plating, especially when the resistance member 470 expands. Thereby, it is possible to suppress deformation of the introduction pipe 475 or a support member that supports the resistance member 470 due to the reaction force of the force with which the expanding resistance member 470 presses the first surface 451 of the resistor 450. When the plating module 400 includes a plurality of resistors 450, the resistance member 470 can be installed so as not to block the plurality of through holes 453 on the surfaces of the plurality of resistors 450 closest to the anode side. The resistance member 470 is configured to generate a resistance corresponding to its volume in the plating solution introduced into the plating tank 410, whereby the local plating current can be adjusted more precisely.

[0037] As shown in FIG. 3, the plating module 400 includes a paddle 491 disposed between the substrate Wf held by the substrate holder 440 and the resistor 450, and a paddle stirring mechanism (not shown) for moving the paddle 491 in the plating solution to stir the plating solution. The paddle 491 can be constituted by, for example, a plate member having a large number of honeycomb-shaped holes, although not limited thereto. The paddle stirring mechanism can be realized by a known mechanism such as a motor. The paddle stirring mechanism is configured to stir the plating solution in the vicinity of the plating surface Wf-a of the substrate Wf by reciprocating the paddle 491 along the plating surface Wf-a of the substrate Wf. However, it is not limited to such an example, and the paddle stirring mechanism may be configured to reciprocate the paddle 491 perpendicular to the plating surface Wf-a as an example. Further, in the present embodiment, an example in which the paddle 491 and the paddle stirring mechanism are provided is shown, but the paddle 491 and the paddle stirring mechanism may not be provided.

[0038] In the cathode region 422, a shielding body 492 is provided to shield the current flowing from the anode 430 to the substrate Wf. In the present embodiment, the shielding body 492 is provided at the same height as the paddle 491, but is not limited to such an example. The shielding body 492 is, for example, a substantially plate-shaped member made of a dielectric material. The shielding body 492 is configured to be movable between a shielding position interposed between the plating surface Wf-a of the substrate Wf and the anode 430, and a retracted position retracted from between the plating surface Wf-a and the anode 430. In other words, the shielding body 492 is configured to be movable between a shielding position below the plating surface Wf-a and a retracted position away from below the plating surface Wf-a. The position of the shielding body 492 is controlled by a shielding body drive mechanism (not shown) that has received a command from the control module 800. The shielding body drive mechanism can be realized by a known mechanism such as a motor or a solenoid.

[0039] Also, in the cathode region 422, a sensor 460 is provided to detect parameters related to the plating film formed on the plating surface Wf-a of the substrate Wf. In the present embodiment, the sensor 460 is a film thickness sensor for measuring the thickness of the plating film, and the parameters related to the plating film mean the thickness of the plating film or a physical quantity for estimating the formation rate of the plating film. The sensor 460 is arranged so as to face the plating surface Wf-a. In the present embodiment, the sensor 460 is configured to be movable so that the detection position can be changed in the radial direction with respect to the rotation axis Ax. However, it is not limited to such an example, and a plurality of sensors 460 facing the plating surface Wf-a may be provided. Also, in one embodiment, the detection end of the sensor 460 is arranged inside the resistor 450. However, it is not limited to such an example, and the sensor 460 may be provided, for example, at other locations outside the resistor 450.

[0040] The detection signal from the sensor 460 is input to the control module 800 (FIG. 1). In this embodiment, a potential sensor having a detection electrode (not shown) is used as the sensor 460. Note that the detection electrode of the sensor 460 may be arranged to face the plating surface Wf-a, or may be arranged in a conduit that is arranged to face the plating surface Wf-a and whose interior is filled with a plating solution. Further, when a potential sensor is used as the sensor 460, at least one reference potential sensor (not shown) may be provided in the plating bath 410. The reference potential sensor may be arranged outside the region between the substrate Wf and the anode 430. In other words, the reference potential sensor may be provided at a position that does not overlap with the substrate Wf and the anode 430 when viewed from a direction perpendicular to the plating surface Wf-a of the substrate Wf. The control module 800 can estimate the formation rate of the plating film formed on the plating surface Wf-a and measure the thickness of the plating film based on the potential difference between the sensor 460, which is a potential sensor, and the reference potential sensor. This is based on the correlation between the plating current and the potential in the plating process. However, as the sensor 460, any sensor that can detect parameters related to the plating film may be used. Instead of or in addition to the potential sensor, other sensors such as an optical distance sensor such as a white confocal type, a magnetic field sensor, or an eddy current type sensor may be employed. Note that, in this embodiment, an example in which the sensor 460 for detecting parameters related to the plating film is provided has been shown, but the sensor 460 may not be provided.

[0041] The control module 800 can control the contraction and expansion of the resistance member 470 based on the thickness of the plating obtained using the sensor 460. Thereby, while checking the uniformity of the thickness of the plating being formed, the resistance can be adjusted, and a more uniform plating film can be formed. When the control module 800 wants to slow down the plating formation speed at the horizontal position of the substrate Wf corresponding to the resistance member 470, it can control the adjustment module 476 (FIG. 3) to increase the pressure on the resistance member 470 to cause expansion. Also, when the control module 800 wants to increase the plating formation speed at the horizontal position of the substrate Wf corresponding to the resistance member 470, it can control the adjustment module 476 to decrease the pressure on the resistance member 470 to cause contraction. Note that the control module 800 may control the expansion and contraction of the resistance member 470 based on various plating conditions, such as the size of the anode opening 427, the rotation speed of the substrate holder 440, or the measured or set value of the current flowing through the anode 430 or the like for plating.

[0042] In this way, during plating, the control module 800 can control the expansion and contraction of the resistance member 470 based on at least one of the thickness of the plating formed on the substrate Wf, the current for plating, the rotation speed of the substrate holder 440, and the size of the anode opening 427. Thereby, the plating current can be adjusted more precisely according to various situations.

[0043] Here, the plating process in the plating module 400 of the present embodiment will be described in more detail. By using the elevating mechanism 442 to immerse the substrate Wf in the plating solution in the cathode region 422, the substrate Wf is exposed to the plating solution. The plating module 400 can perform a plating process on the plating surface Wf-a of the substrate Wf by applying a voltage between the anode 430 and the substrate Wf in this state. In one embodiment, the plating process is performed while rotating the substrate holder 440 using the rotation mechanism 448. By the plating process, a conductive film (plating film) is deposited on the plating surface Wf-a of the substrate Wf.

[0044] The control module (controller) 800 of this embodiment can improve the uniformity of the plating film thickness distribution across the entire substrate Wf by controlling the adjustment module 476 to adjust the expansion and contraction of the resistance member 470. As an example, the adjustment of the resistance member 470 using the adjustment module 476 is performed before the plating process starts. Also, as an example, the adjustment of the resistance member 470 using the adjustment module 476 is performed in real time based on the detection value by the sensor 460 during the plating process.

[0045] FIG. 8 is a flowchart showing an example of a method for setting the operation recipes of the resistance member 470, the anode mask 426, and the shield 492 by the control module 800. The method shown in FIG. 8 is executed, for example, when processing a new substrate lot. Note that the control module 800 may set the operation recipes for only some of the resistance member 470, the anode mask 426, and the shield 492. Here, the operation recipe of the resistance member 470 can be a recipe indicating the volume of the resistance member 470 or the length along the rotation axis Ax. The control module 800 may refer to the data indicating the relationship between the internal pressure of the resistance member 470 and the length along the rotation axis Ax stored in a storage medium (not shown), and control the expansion and contraction of the resistance member 470 based on the data. Also, the operation recipe of the anode mask 426 is a recipe indicating the opening dimension of the anode mask 426. Also, the operation recipe of the shield 492 is a recipe indicating the forward and backward positions of the shield 492. Note that the operation recipe may be set by a computer external to the plating apparatus 1000 and transmitted to the plating apparatus 1000 instead of being set by the control module 800 of the plating apparatus 1000.

[0046] In the example shown in FIG. 8, first, the control module 800 acquires the resist pattern of the substrate Wf to be processed (step S110). The resist pattern means the pattern of the resist layer formed on the surface to be plated Wf-a so that a desired plating pattern is formed by the plating process. The acquisition of the resist pattern may be performed by detecting the substrate Wf with a sensor provided in the plating apparatus 1000. As an example, the plating apparatus 1000 may be provided with an imaging sensor (not shown) such as a camera that images the surface to be plated Wf-a of the substrate Wf. Then, the control module 800 may acquire the imaging data detected by the imaging sensor and acquire the resist pattern of the surface to be plated Wf-a by analyzing the imaging data. The acquisition of the resist pattern from the imaging data can be performed using a known method based on the shadow or feature points of the imaging data. Further, the control module 800 may acquire the resist pattern by an external input via wired or wireless communication as an example.

[0047] Then, the control module 800 sets the operation recipes for the resistive member 470, the anode mask 426, and the shield 492 based on the acquired resist pattern (step S120). As a specific example, the control module 800 calculates the plating growth coefficient for each predetermined region of the plated surface Wf-a of the substrate Wf based on the acquired resist pattern, and sets the operation recipes for each control target based on the calculated plating growth coefficient. Here, the plating growth coefficient is a parameter indicating the growth rate (formation rate) of the plating film in a state where each of the resistive member 470, the anode mask 426, and the shield 492 shields the least current. The plating growth coefficient can be, for example, the amount of plating film formed per unit time (e.g., 1 second) (e.g., nanometers). As a specific example, the control module 800 can calculate the opening ratio of the resist layer for each predetermined region based on the resist pattern, and calculate the plating growth coefficient based on the calculated opening ratio. This is based on the fact that in a region where the opening ratio of the resist layer is large, the area where plating accumulates and the amount of plating for forming a certain amount of plating film are large, and the growth rate of the plating film tends to be smaller than in a region where the opening ratio of the resist layer is small.

[0048] FIG. 9 is a diagram schematically showing a resist pattern formed on a plating surface Wf-a of a substrate Wf according to an embodiment. In FIG. 9, resist openings are formed only in a cross-shaped region A1 with hatching, and a region A2 outside the cross-shaped region A1 is a non-opening region where no resist opening is formed. When such a resist pattern is subjected to a plating process on the substrate Wf, no plating current flows in the non-opening region A2, and the plating current flows only in the opening region A1. Further, in this embodiment, the plating process is performed while rotating the substrate holder 440 using the rotation mechanism 448, and in the convex portion region of the cross shape including the region A2 particularly in the circumferential direction in the region A1, the plating current is concentrated and the plating film thickness becomes large. In this specification, when viewed along the circumferential direction, a region where substantially all resist openings are formed is referred to as a "central region B1" (in the example shown in FIG. 9, a circular region surrounded by an inner dashed line C1). Further, when viewed along the circumferential direction, a region including both a region where a resist opening is formed (opening region A1) and a region where no resist opening is formed (non-opening region A2), and having an area of the opening region A1 larger than that of the non-opening region A2 in the circumferential direction is referred to as an "intermediate region B2" (in the example shown in FIG. 9, an annular region surrounded by dashed lines C1 and C2). Furthermore, when viewed along the circumferential direction, a region including both the opening region A1 and the non-opening region A2, and having an area of the opening region A1 smaller than that of the non-opening region A2 in the circumferential direction is referred to as an "outer peripheral region B3" (in the example shown in FIG. 9, an annular region surrounded by dashed lines C2 and C3). In the example shown in FIG. 9, the central region B1, the intermediate region B2, and the outer peripheral region B3 are located in this order from the center to the outer peripheral side of the plating surface Wf-a, and no resist opening is formed on the outer peripheral side of the outer peripheral region B3. However, the present invention is not limited to such an example, and an arbitrary resist pattern may be formed on the substrate Wf.

[0049] Here, the anode mask 426 or the shield 492 provided in the plating module 400 can suitably adjust the formation rate of the plating film in the vicinity of the outer peripheral edge of the surface to be plated Wf-a. However, when the substrate Wf as shown in FIG. 9 is plated, the plating formation rate in the region on the inner peripheral side rather than the vicinity of the outer peripheral edge (particularly, the intermediate region B2) becomes relatively large, and the uniformity of the thickness of the plating film may be impaired.

[0050] In contrast, in the plating module 400 of the present embodiment, the resistance member 470 can be formed in an annular shape, and is configured to be able to adjust the electric field mainly in the region where the resistance member 470 is disposed. Thereby, the current flowing through the intermediate region B2 can be adjusted to adjust the plating formation rate of the intermediate region B2. As an example, in the substrate Wf of FIG. 9, when the plating formation rate of the intermediate region B2 surrounded by the dashed-dotted lines C1 and C2 is relatively large, by expanding the resistance member 470, the thickness of the plating film formed in the intermediate region B2 can be reduced. Thereby, even when the substrate Wf as shown in FIG. 9 is plated, the uniformity of the thickness of the plating film can be improved. In addition, the plating module 400 of the present embodiment includes an anode mask 426 and a shield 492. Thereby, for the intermediate region B2, the plating formation rate can be adjusted by expanding or contracting the resistance member 470, and for the outer peripheral region B3, the plating formation rate can be adjusted by the anode mask 426 and the shield 492. Therefore, by controlling the resistor 450, the anode mask 426, and the shield 492, the plating formation rate can be adjusted for each region of the substrate Wf, and the uniformity of the thickness of the plating film can be improved. Note that the resistance member 470 may be formed in an arch shape, and even in this case, the plating formation rate in the annular region centered on the rotation axis Ax of the substrate holder 440 during plating can be locally adjusted. Further, the dimensions of the resistance member 470 may be determined based on the intermediate region B2, such as making the dimensions of the resistance member 470 substantially the same as those of the intermediate region B2.

[0051] FIG. 10 is a flowchart showing an example of a method for setting operation recipes for the resistive member 470, the anode mask 426, and the shield 492 by the control module 800 during the plating process. The method shown in FIG. 10 is executed during the plating process to set instead of the method shown in FIG. 8 or to modify the operation recipe set by the method shown in FIG. 8. Note that the control module 800 may set operation recipes for only some of the resistive member 470, the anode mask 426, and the shield 492.

[0052] When the plating process is started (step S210), the control module 800 acquires in real time parameters regarding the plating film from the sensor 460 (step S220). In the present embodiment, parameters regarding the plating film are detected by the sensor 460 with the rotation of the substrate Wf, and in one embodiment, parameters regarding the plating film are detected at a plurality of points along the radial direction on the surface to be plated Wf-a. The control module 800 calculates the film thickness distribution of the plating film on the surface to be plated Wf-a based on the detection values by the sensor 460 (step S230). Subsequently, the control module 800 sets operation recipes for the resistive member 470, the anode mask 426, and the shield 492 based on the calculated film thickness distribution (step S240). The control module 800 repeats the processes of steps S220 to S240 to set the operation recipe of the control target until the plating process ends (step S250). Then, the control module 800 controls the resistive member 470, the anode mask 426, and the shield 492 based on the set operation recipe. In this way, based on the parameters regarding the plating film acquired from the sensor 460, by setting or modifying the operation recipes of the resistive member 470 and the like during the plating process, the uniformity of the thickness of the plating film can be further improved.

[0053] <Modification Example 1-1> In the above-described embodiment, the resistive member 470 expands and contracts in the direction in which the rotation axis Ax of the substrate holder 440 extends, but the resistive member 470 may expand and contract in the radial direction with respect to the rotation axis Ax.

[0054] FIG. 11 is a schematic longitudinal sectional view showing the resistive member 470A of this modification in a contracted state. FIG. 12 is a schematic longitudinal sectional view showing the resistive member 470A of this modification in an expanded state. In FIG. 11, the points at which the resistive member 470 expands and contracts in the radial direction are schematically indicated by an arrow Ar2. In the resistive member 470A, by arranging a member having rigidity on surfaces other than the radially outer surface thereof so as not to move the film-like member 477, the expanding and contracting directions can be set.

[0055] Also in the resistive member 470A of this modification, when the resistive member 470A expands, since the electric field above the resistive member 470A can be changed, the local plating current can be adjusted. Further, the radial position at which the plating current can be adjusted can be changed.

[0056] <Modification 1-2> In the above-described embodiment, the resistive member 470 expands and contracts in the direction in which the rotation axis Ax of the substrate holder 440 extends, but the resistive member 470 may expand and contract in the circumferential direction with respect to the rotation axis Ax.

[0057] FIG. 13 is a schematic plan view showing the resistive member 471 of this modification in a contracted state. FIG. 14 is a schematic plan view showing the resistive member 471 of this modification in an expanded state. In the illustrated example, three resistive members 471 are configured to shield the electric field over substantially the entire circumferential direction. By connecting the three resistive members 471 to each other in the circumferential direction, one annular shielding member can be formed. Let the three resistive members 471 be resistive members 471A, 471B, and 471C, respectively. Fluids are introduced into the resistive members 471A, 471B, and 471C through introduction pipes 475A, 475B, and 475C, respectively, and the volumes are controlled. In the resistive member 471, by arranging a member having rigidity on surfaces other than the surface perpendicular to the circumferential direction so as not to move the film-like member 477, the expanding and contracting directions can be set.

[0058] Even in the resistive member 471 of this modification example, when the resistive member 471 expands, the electric field above the resistive member 471 can be changed, so that the local plating current can be adjusted. Also, when in the contracted state, the resistive member 471 can be configured compactly, increasing the change in the volume of the resistive member 471 and enabling more flexible adjustment of the plating current. Note that the number of resistive members 471 arranged in the plating module 400 is not particularly limited and can be 1, 2, or 4 or more. Also, the resistive member 471 does not necessarily have to be arranged over the entire circumference and may be arranged only in a partial angular range around the rotation axis Ax.

[0059] <Modification Example 1-3> In the above-described embodiment, the plating module 400 constitutes a cup-type plating apparatus, but it may also constitute a dip-type plating apparatus. In this case, each of the substrate Wf, the resistor 450, the resistive member 470, and the anode 430 can be arranged along the vertical direction. Also in this modification example, the same operational effects as those of the above-described embodiment can be obtained.

[0060] Second Embodiment The plating apparatus 1000 of the second embodiment has substantially the same configuration as the plating apparatus 1000 of the first embodiment. However, in the second embodiment, it is different from the first embodiment in that a resistive member 470 is arranged between the most anode-side surface and the most substrate holder-side surface of at least one resistor 450 in the plating module 400.

[0061] FIG. 15 is a schematic longitudinal sectional view showing the configuration inside the inner tank 412 of the plating module 400A of the present embodiment. The plating module 400A includes a plurality of resistors 450A and 450B. The resistors 450A and 450B are located between the substrate holder 440 and the anode 430, and the resistor 450B is arranged on the anode side of the resistor 450A. A resistance member 470 is arranged in the cathode region 422A between the resistor 450A and the resistor 450B. The resistors 450A and 450B may each have the same shape as the resistor 450 of the above-described embodiment. The resistance member 470 may expand only upward, may expand only downward, or may expand both upward and downward. In the present embodiment, by arranging the resistance member 470 between the plurality of resistors 450A and 450B, an effect of changing the electric field between the resistance member 470 and each of the resistors 450A and 450B to reduce the electric field can be obtained, and the local plating current can be adjusted more precisely.

[0062] Note that the resistance member 470 may block the through hole 453 that opens on the anode-side surface of the resistor 450A, or may block the through hole 453 that opens on the surface of the resistor 450B on the substrate holder side. Thereby, the plating current passing through the through holes 453 of the resistors 450A and 450B can be changed more greatly, and the local plating current can be adjusted more flexibly. Further, instead of or additionally to the resistance member 470, the resistance member 470A or 471 of the above-described modification may be arranged between the resistor 450A and the resistor 450B.

[0063] <Modification 2> In the plating module 400 of the above-described embodiment, the resistance member 470 may be arranged inside the resistor 450.

[0064] FIG. 16 is a schematic longitudinal sectional view showing the configuration of the inner tank 412 of the plating module 400B of this modified example. In the illustrated example, the plating module 400B includes a resistor 450C. The resistor 450C includes an internal chamber 454 that defines a hollow within the resistor 450C. A resistance member 470 is disposed in the internal chamber 454, and a plating solution is introduced therein. The internal chamber 454 communicates with the substrate holder side of the resistor 450C through a plurality of through holes 453A. The internal chamber 454 communicates with the anode side of the resistor 450C through a plurality of through holes 453B. Also in this modified example, the same operational effects as those of the above-described plating module 400A can be achieved.

[0065] Third Embodiment FIG. 17 is a schematic longitudinal sectional view showing the inner tank 412 of the plating module 400C of the third embodiment. The plating module 400C has substantially the same configuration as the plating module 400B of the above-described modified example, but is different from the plating module 400B in that it has a resistor 450D and a resistance member 472 instead of the resistor 450C and the resistance member 470.

[0066] A plurality of through holes 453C are formed in the resistor 450D. The through holes 453C penetrate between the first surface 451 on the anode side of the resistor 450 and the second surface 452 on the substrate holder 440 side, and constitute a path for allowing the plating solution and ions in the plating solution to pass through.

[0067] A resistance member 472 is disposed inside the resistor 450D. The resistance member 472 is disposed in the hollow of the resistor 450D and is formed of an elastic member. The resistance member 472 includes an elastic wall 4720 that defines the through hole 453C of the resistor 450D. In the illustrated example, the elastic wall 4720 is formed so as to surround the through hole 453C. The shape of the elastic wall 4720 can be appropriately set according to the shape of the through hole 453C, and can be, for example, cylindrical.

[0068] The resistance member 472 has a cavity 478A formed therein, and the cavity 478A is defined by a portion along the inner wall surface that defines the hollow of the resistor 450D and an elastic wall 4720. In the illustrated example, the elastic wall 4720 surrounds the through-hole 453C, and the cavity 478A surrounds the elastic wall 4720. The interior of the cavity 478A is communicated with an inlet 473 for introducing fluid into the resistance member 472, and is configured such that fluid is introduced from outside the plating tank 410 via an introduction pipe 475. As an example, the resistance member 472 can have a sieve-like structure in which a plurality of through-holes 453C are formed in a plate-like outer shape extending along a horizontal plane.

[0069] The plating module 400C of the present embodiment is configured such that the opening and closing of the through-hole 453C are controlled by the contraction and expansion of the resistance member 472. FIG. 17 shows the resistance member 472 in a contracted state. The through-hole 453C is not blocked by the elastic wall 4720, and the anode side and the substrate holder side of the through-hole 453C are communicated with each other via the through-hole 453C. Therefore, the through-hole 453C is in an open state.

[0070] FIG. 18 is a schematic longitudinal sectional view showing the inner tank 412 of the plating module 400C, and shows the resistance member 472 in an expanded state. In FIG. 18, the pressure in the cavity 478A inside the resistance member 472 increases, and the resistance member 472 expands in a direction perpendicular to the rotation axis Ax of the substrate holder 440, and the elastic wall 4720 projects so as to narrow the through-hole 453C and closes the through-hole 453C. Therefore, the through-hole 453C is in a closed state. By controlling the degree of contraction and expansion of the resistance member 472, the inner diameter of the through-hole 453C can be adjusted, and the resistance of the through-hole 453C can be continuously changed.

[0071] In the illustrated example, although the opening and closing of all the through holes 453C are controlled, the opening and closing of some of the through holes 453C may be controlled. Thus, in the present embodiment, the resistance member 472 is disposed inside the resistor 450D and defines at least a part of the plurality of through holes 453C. Thereby, the resistance of the through hole 453C is changed by the contraction and expansion of the resistance member 472, and the local plating current passing through the through hole 453C can be adjusted more reliably. The position of the through hole 453C whose opening and closing are controlled is not particularly limited, and can be appropriately set according to the position for adjusting the plating current.

[0072] The present invention can also be described in the following forms. [Form 1] According to Form 1, a plating apparatus is proposed. This plating apparatus includes a plating bath, a substrate holder configured to hold a substrate, an anode disposed in the plating bath so as to face the substrate held by the substrate holder, and at least one resistor for electric field adjustment disposed between the anode and the substrate holder. Each of the at least one resistor includes a plurality of through holes communicating with the anode side and the substrate holder side. The plating apparatus further includes a resistance member for electric field adjustment disposed between the anode and the substrate holder. The resistance member includes an inlet through which a fluid is introduced, and is configured such that its volume changes by changing the amount or pressure of the fluid inside the resistance member. The resistance member is installed so as not to block the plurality of through holes on the surface of the at least one resistor closest to the anode. According to Form 1, the uniformity of the thickness of the plating film formed on the object to be plated can be improved.

[0073] [Form 2] According to Form 2, in Form 1, the resistance member is capable of expanding and contracting in the direction in which the rotation axis of the rotation of the substrate holder during plating extends. According to Form 2, a simpler configuration can be achieved compared to the case of expanding and contracting in other directions, and the electric field can be adjusted more precisely, or the manufacture of the resistance member 470 can be facilitated.

[0074] [Embodiment 3]According to Embodiment 3, in Embodiment 1 or 2, the resistance member can expand and contract in the radial direction with respect to the rotation axis of the rotation of the substrate holder during plating. According to Embodiment 3, the range for adjusting the plating current can be widened in the radial direction.

[0075] [Embodiment 4]According to Embodiment 4, in Embodiments 1 to 3, the resistance member can expand and contract in the circumferential direction with respect to the rotation axis of the rotation of the substrate holder during plating. According to Embodiment 4, in the contracted state, the resistance member can be configured compactly, the change in the volume of the resistance member can be increased, and the plating current can be adjusted more flexibly.

[0076] [Embodiment 5]According to Embodiment 5, in Embodiments 1 to 4, the resistance member is annular or arched. Since the formation rate of the plating may depend on the distance from the center of the object, according to Embodiment 5, in such a case, the uniformity of the thickness of the formed plating can be particularly enhanced.

[0077] [Embodiment 6]According to Embodiment 6, in Embodiments 1 to 5, the resistance member is configured to generate a resistance corresponding to the volume in the plating solution introduced into the plating tank. According to Embodiment 6, the local plating current can be adjusted more precisely.

[0078] [Embodiment 7]According to Embodiment 7, in Embodiment 1, the resistance member is disposed inside the resistor and defines at least a part of the plurality of through holes. According to Embodiment 7, the local plating current passing through the through holes can be adjusted more reliably.

[0079] [Embodiment 8]According to Embodiment 8, in Embodiments 1 to 6, the plating apparatus includes a plurality of the resistors, and the resistance member is disposed between the plurality of resistors. According to Embodiment 8, the effect of adjusting the electric field between the resistance member and each of the plurality of resistors can be obtained, and the local plating current can be adjusted more precisely.

[0080] [Embodiment 9]According to Embodiment 9, in Embodiments 1 to 8, the substrate holder is configured to hold the substrate with the surface to be plated facing downward in the plating bath. According to Embodiment 9, plating can be performed by taking advantage of the advantages of a cup-type plating apparatus.

[0081] As described above, the embodiments of the present invention have been explained. However, the above-described embodiments of the invention are for facilitating the understanding of the present invention and do not limit the present invention. The present invention can be changed and improved without departing from its gist, and it goes without saying that equivalents of the present invention are included. Further, any combination of embodiments and modifications is possible within the scope of solving at least a part of the above-described problems or achieving at least a part of the effects, and any combination or omission of each component described in the claims and the specification is possible.

Explanation of Reference Numerals

[0082] 400, 400A, 400B, 400C... plating modules 410... plating bath 412... inner bath 420... membrane 422, 422A... cathode regions 424... anode region 426... anode mask 427... anode opening 430... anode 440... substrate holder 442... elevating mechanism 448... rotating mechanism 450, 450A, 450B, 450C, 450D... resistors 451... first surface of the resistor 453, 453A, 453B, 453C... through holes 460... sensor 470, 470A, 471, 471A, 471B, 471C, 472... resistance members 473... inlet 475, 475A, 475B, 475C... inlet pipes 476…Adjustment module 477…Membrane member 478, 478A…Hole 492…Shielding body 800…Control module 1000…Plating apparatus 4720…Elastic wall Ax…Rotation axis Wf…Substrate Wf-a…Plated surface

Claims

1. Plating tank and A substrate holder configured to hold a substrate, an anode positioned in the plating bath so as to face the substrate held in the substrate holder, At least one resistor for adjusting the electric field, disposed between the anode and the substrate holder, wherein each of the at least one resistor has a plurality of through holes communicating with the anode side and the substrate holder side, A resistive member for adjusting the electric field is disposed between the anode and the substrate holder. Equipped with, The resistive member is provided with an inlet into which fluid is introduced, and is configured such that its volume changes by changing the amount or pressure of the fluid inside the resistive member. The resistive member is installed so as not to block the plurality of through holes on the surface of at least one resistor closest to the anode, A plating apparatus wherein the resistive member is composed of a film-like member and a rigid member disposed on a surface of the resistive member other than the surface facing the resistor, and is configured to expand in a direction approaching the plurality of through holes in the resistor.

2. The plating apparatus according to claim 1, wherein the resistive member is expandable and contractable in the direction in which the rotation axis of the rotation of the substrate holder during plating extends.

3. The plating apparatus according to claim 1 or 2, wherein the resistive member is annular or arch-shaped.

4. The plating apparatus according to claim 1 or 2, wherein the resistive member is configured to generate resistance in the plating solution introduced into the plating tank in proportion to its volume.

5. The plating apparatus according to claim 1 or 2, wherein the substrate holder is configured to hold the substrate in the plating tank with the surface to be plated facing downward.

6. A plating tank, A substrate holder configured to hold a substrate, an anode positioned in the plating bath so as to face the substrate held in the substrate holder, At least one resistor for adjusting the electric field, disposed between the anode and the substrate holder, wherein each of the at least one resistor has a plurality of through holes communicating with the anode side and the substrate holder side, A resistive member for adjusting the electric field is disposed between the anode and the substrate holder. Equipped with, The resistive member is provided with an inlet into which fluid is introduced, and is configured such that its volume changes by changing the amount or pressure of the fluid inside the resistive member. The resistive member is installed so as not to block the plurality of through holes on the surface of at least one resistor closest to the anode, The plating apparatus wherein the resistive member is disposed inside the resistive body and defines at least a portion of the plurality of through holes.

7. A plating tank and A substrate holder configured to hold a substrate, an anode positioned in the plating bath so as to face the substrate held in the substrate holder, A plurality of resistors for adjusting the electric field, disposed between the anode and the substrate holder, wherein each of the plurality of resistors has a plurality of through holes communicating with the anode side and the substrate holder side, A resistive member for adjusting the electric field is disposed between the anode and the substrate holder. Equipped with, The resistive member is provided with an inlet into which fluid is introduced, and is configured such that its volume changes by changing the amount or pressure of the fluid inside the resistive member. The resistive member is installed so as not to block the plurality of through holes on the surface closest to the anode of the plurality of resistors. The resistive member is positioned between the plurality of resistive elements in the plating apparatus.

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