Adhesive composition for use of semiconductor process, film for use of semiconductor process comprising adhesive composition, and manufacturing method for semiconductor package using the same

Abstract

The present invention relates to an adhesive composition for a semiconductor process capable of realizing a semiconductor process film with excellent adhesion reliability to a wafer even during a carrier debonding process of a wafer, a semiconductor process film comprising the same, and a method for manufacturing a semiconductor package using the same.

Description

Technology Field

[0001] The present invention relates to an adhesive composition for semiconductor processes, a film for semiconductor processes comprising the same, and a method for manufacturing a semiconductor package using the same. Background Technology

[0003] Generally, the semiconductor chip manufacturing process includes a process of forming fine patterns on a wafer and a process of polishing the wafer to meet the specifications of the final device for packaging.

[0004] As semiconductor packaging technology has recently become more high-performance, semiconductor integration density has increased and wafer thickness has become ultra-thin. Therefore, to ensure smooth handling of the wafer during the process, a carrier is temporarily attached to the wafer, and a debonding process is performed to peel off the carrier after the wafer is handled.

[0005] The carrier debonding process utilizes heat treatment and laser irradiation methods. In particular, the process of debonding the carrier using an excimer laser has the advantage of enabling very fast processing in a selective area.

[0006] However, the output of the excimer laser is high, and there is a problem that PET films, PEN films, PO films, etc., which are substrates of most semiconductor process films, are deformed or damaged by the excimer laser. Accordingly, during the carrier debonding process, the substrate of the semiconductor process film is damaged by the excimer laser, and as a result, the semiconductor process film may break or peel off from the adhesive layer, which reduces wafer adhesion reliability and may cause problems in the wafer processing process.

[0007] Accordingly, there is a need for technology that can develop semiconductor process films with excellent adhesion reliability to wafers, even during the carrier debonding process using an excimer laser. The problem to be solved

[0009] The present invention provides an adhesive composition for a semiconductor process capable of realizing a semiconductor process film with excellent adhesion reliability to a wafer even during a wafer carrier debonding process, a semiconductor process film comprising the same, and a method for manufacturing a semiconductor package using the same.

[0010] However, the problems that the present invention aims to solve are not limited to those mentioned above, and other unmentioned problems will be clearly understood by those skilled in the art from the description below. means of solving the problem

[0012] One embodiment of the present invention provides an adhesive composition for a semiconductor process comprising: an adhesive binder resin; a photoinitiator; and a laser absorber; wherein the laser absorber absorbs a laser having a wavelength value of one of 250 nm to 350 nm, and the photoinitiator is activated by light having a wavelength different from that of the laser.

[0013] In addition, one embodiment of the present invention provides a semiconductor process film comprising: a substrate; and an adhesive layer comprising the adhesive composition for the semiconductor process.

[0014] In addition, one embodiment of the present invention provides a method for manufacturing a semiconductor package comprising: preparing a wafer stack including a wafer and a carrier provided on one side of the wafer; attaching an adhesive layer of the semiconductor process film to the other side of the wafer; irradiating a laser onto the wafer stack to peel off the carrier on one side of the wafer; processing the wafer; and irradiating light onto the adhesive layer to cure it, and then peeling off the semiconductor process film from the other side of the wafer. Effects of the invention

[0016] An adhesive composition for a semiconductor process according to one embodiment of the present invention can easily implement an adhesive layer that effectively absorbs a laser and effectively reduces adhesive strength after light irradiation.

[0017] A semiconductor process film according to one embodiment of the present invention effectively absorbs a laser irradiated during the debonding process of a wafer carrier, and after light irradiation, the adhesive strength is effectively reduced so that it can be easily peeled off from the wafer.

[0018] A semiconductor package manufacturing method according to one embodiment of the present invention can easily peel off a carrier using an excimer laser after processing a wafer and effectively peel off a semiconductor process film through light irradiation, thereby effectively improving semiconductor package manufacturing efficiency.

[0019] The effects of the present invention are not limited to those described above, and unmentioned effects will be clearly understood by those skilled in the art from the present specification and the accompanying drawings. Brief explanation of the drawing

[0021] FIG. 1 is a schematic diagram illustrating a semiconductor package manufacturing method according to one embodiment of the present invention. Specific details for implementing the invention

[0022] Throughout this specification, when a part is described as "comprising" a certain component, this means that, unless specifically stated otherwise, it does not exclude other components but may include additional components.

[0023] Throughout this specification, when a component is described as being located "on" another component, this includes not only cases where a component is in contact with another component, but also cases where another component exists between the two components.

[0024] Throughout the entire specification, the unit "parts by weight" may refer to the ratio of weight between each component.

[0025] Throughout this specification, "(meth)acrylate" is used to refer collectively to acrylates and methacrylates.

[0026] Throughout this specification, terms including ordinal numbers, such as "first" and "second," are used for the purpose of distinguishing one component from another and are not limited by said ordinal numbers. For example, within the scope of the invention, the first component may also be named the second component, and similarly, the second component may be named the first component.

[0028] The present specification will be described in more detail below.

[0029] One embodiment of the present invention provides an adhesive composition for a semiconductor process comprising: an adhesive binder resin; a photoinitiator; and a laser absorber; wherein the laser absorber absorbs a laser having a wavelength value of one of 250 nm to 350 nm, and the photoinitiator is activated by light having a wavelength different from that of the laser.

[0030] An adhesive composition for a semiconductor process according to one embodiment of the present invention can easily implement an adhesive layer that effectively absorbs a laser and effectively reduces adhesive strength after light irradiation.

[0031] Specifically, the semiconductor process composition can effectively absorb an excimer laser irradiated for debonding (peeling) a semiconductor carrier in a method for manufacturing a semiconductor package described later. Through this, the excimer laser can be effectively prevented from reaching the substrate of the semiconductor process film described later. By doing so, the semiconductor process substrate is prevented from being damaged or deformed by the excimer laser, thereby further improving the reliability of the semiconductor process film's attachment to the wafer. Additionally, the semiconductor process composition can be cured as light having a wavelength different from that of the laser is irradiated, thereby effectively reducing its adhesive strength. After debonding the wafer carrier, light is irradiated onto the semiconductor process film to effectively reduce the adhesive strength of the adhesive layer containing the semiconductor process composition. Through this, the semiconductor process film can be effectively debonded from the wafer.

[0032] According to one embodiment of the present invention, the wavelength range of the laser absorbed by the laser absorber may be 250 nm to 350 nm, 270 nm to 330 nm, 290 nm to 310 nm, or 300 nm to 320 nm. The laser may have one wavelength value among the aforementioned wavelength ranges.

[0033] According to one embodiment of the present invention, the laser absorber can absorb an excimer laser having a wavelength value of one of 300 nm to 320 nm. Specifically, the laser absorber can absorb an excimer laser, and the wavelength range of the excimer laser absorbed by the laser absorber may be 305 nm to 315 nm, 300 nm to 320 nm, or 310 nm to 320 nm. An excimer laser having the aforementioned wavelength range can effectively perform a carrier debonding process from a wafer in a method for manufacturing a semiconductor package described below. Accordingly, the laser absorber included in the adhesive composition for the semiconductor process can effectively absorb an excimer laser having the aforementioned wavelength range.

[0034] According to one embodiment of the present invention, the laser absorber may include at least one of a triazine-based compound and a cyanoacrylate-based compound. That is, the laser absorber may include at least one of a laser absorber containing a triazine-based compound and a laser absorber containing a cyanoacrylate-based compound. The laser absorber containing the aforementioned compounds can effectively absorb an excimer laser having the aforementioned wavelength range. Furthermore, the adhesive composition for semiconductor processes containing the laser absorber does not significantly change in light transmittance even when heat-treated at a high temperature (e.g., 240°C), making it easy to apply to a semiconductor package manufacturing process.

[0035] Meanwhile, when using a laser absorber containing a benzoate-based compound, a benzotriazole-based compound, or an oxanilide-based compound, it may be difficult to effectively absorb the excimer laser, and the light transmittance may change significantly during heat treatment at high temperatures, making it difficult to apply to the semiconductor package manufacturing process.

[0036] According to one embodiment of the present invention, the triazine-based compound included in the laser absorber is 2-(4,6-diphenyl-1,3,5-triazine-2-yl)-5-[2-(2-ethylhexanoyloxy)ethoxy]-phenol (ADK STAB LA46, manufactured by ADEKA), 2-hydroxyphenyl-s-triazine derivative (Tinuvin 1600, manufactured by BASF), 2,4-bis-[{4-(4-ethylhexyloxy)-4-hydroxy}-phenyl]-6-(4-methoxyphenyl)-1,3,5-triazine (Tinosorb S, manufactured by BASF), 2,4-bis[2-hydroxy-4-butoxyphenyl]-6-(2,4-dibutoxyphenyl)-1,3,5-triazine (TINUVIN 460, manufactured by BASF), Reaction product of 2-(4,6-bis(2,4-dimethylphenyl)-1,3,5-triazine-2-yl)-5-hydroxyphenyl and [(C10-C16 (mainly C12-C13)alkyloxy)methyl]oxirane (TINUVIN 400, manufactured by BASF), 2-[4,6-bis(2,4-dimethylphenyl)-1,3,5-triazine-2-yl]-5-[3-(dodecyloxy)-2-hydroxypropoxy]phenol, reaction product of 2-(2,4-dihydroxyphenyl)-4,6-bis-(2,4-dimethylphenyl)-1,3,5-triazine and (2-ethylhexyl)-glycidic acid ester (TINUVIN 405, manufactured by BASF), It may include at least one of 2-(4,6-diphenyl-1,3,5-triazine-2-yl)-5-[(hexyl)oxy]-phenol (TINUVIN 1577, manufactured by BASF), and 2-(2-hydroxy-4-[1-octyloxycarbonylethoxy]phenyl)-4,6-bis(4-phenylphenyl)-1,3,5-triazine (TINUVIN 479, manufactured by BASF).

[0037] In addition, the cyanoacrylate-based compound included in the laser absorber may include at least one of 1,3-bis-((2'-cyano-3',3'-diphenylacrylate)oxy)2,2-bis-(((2'-cyano-3',3'-diphenylacrylate)oxy)methyl)-propane (Uvinul 3030, manufactured by BASF), alkyl-2-cyanoacrylate, cycloalkyl-2-cyanoacrylate, alkoxyalkyl-2-cyanoacrylate, alkenyl-2-cyanoacrylate, and alkenyl-2-cyanoacrylate.

[0038] According to one embodiment of the present invention, the content of the laser absorber may be 0.5 parts by weight or more and 3 parts by weight or less with respect to 100 parts by weight of the adhesive binder resin. Specifically, with respect to 100 parts by weight of the adhesive binder resin, the content of the laser absorber may be 0.7 parts by weight or more and 2.7 parts by weight or less, 0.9 parts by weight or more and 2.3 parts by weight or less, 1 part by weight or more and 2 parts by weight or less, 0.5 parts by weight or more and 1.5 parts by weight or less, or 1 part by weight or more and 2.5 parts by weight or less. When the content of the laser absorber included in the adhesive composition for semiconductor processes is within the aforementioned range, the adhesive composition for semiconductor processes can effectively absorb an excimer laser, and the light transmittance does not change significantly even during high-temperature heat treatment, making it easy to apply to a semiconductor package manufacturing process.

[0039] According to one embodiment of the present invention, the adhesive composition for a semiconductor process may include a photoinitiator. Any photoinitiator used in the art may be adopted and used as the photoinitiator without limitation. Specifically, the photoinitiator may include at least one of a benzophenone-based photoinitiator, an acetophenone-based photoinitiator, a ketal-based photoinitiator, and a thioxantone-based photoinitiator. As the photoinitiator, at least one of Irgacure #819 (IGM Resins), Omnirad 907 (IGM Resins), HP-8 (Miwon Specialty), Irgacure #651 (BASF), Irgacure #184 (BASF), Irgacure #1173 (BASF), and CP-4 (Irgacure #184) may be used, but the type of photoinitiator is not limited.

[0040] According to one embodiment of the present invention, the content of the photoinitiator may be 1 part by weight or more and 5 parts by weight or less with respect to 100 parts by weight of the adhesive binder resin. Specifically, with respect to 100 parts by weight of the adhesive binder resin, the content of the photoinitiator may be 1.3 parts by weight or more and 4.5 parts by weight or less, 1.5 parts by weight or more and 4 parts by weight or less, 1.7 parts by weight or more and 3.5 parts by weight or less, 2 parts by weight or more and 3 parts by weight or less, 1 part by weight or more and 3 parts by weight or less, or 2 parts by weight or more and 4 parts by weight or less. When the content of the photoinitiator included in the adhesive composition for semiconductor processes is within the aforementioned range, the adhesive strength can be effectively reduced during photocuring without hindering the laser absorber from absorbing the excimer laser.

[0041] According to one embodiment of the present invention, the weight ratio of the photoinitiator to the laser absorber may be 1:0.3 to 1:1.5. Specifically, the weight ratio of the photoinitiator to the laser absorber may be 1:0.5 to 1:1.5, 1:0.5 to 1:1.3, 1:0.5 to 1:1, or 1:0.3 to 1:1. When the weight ratio of the photoinitiator to the laser absorber included in the adhesive composition for semiconductor processes is within the aforementioned range, the adhesive composition for semiconductor processes can effectively absorb an excimer laser, and at the same time, the adhesive strength can be effectively reduced after photocuring. Furthermore, the adhesive composition for semiconductor processes does not significantly change in light transmittance even when heat-treated at high temperatures, making it easy to apply to a semiconductor package manufacturing process.

[0042] According to one embodiment of the present invention, the adhesive binder resin may comprise a (meth)acrylic copolymer which is a reaction product of a polymer of a monomer mixture comprising a (meth)acrylate monomer containing an alkyl group having 1 to 10 carbon atoms; and a (meth)acrylate monomer containing a polar group, and a (meth)acrylic copolymer containing an isocyanate compound containing a (meth)acryloyl group.

[0043] By including the above adhesive binder resin in the (meth)acrylic copolymer, the adhesive composition for semiconductor processes can achieve excellent adhesive properties before photocuring.

[0044] According to one embodiment of the present invention, the alkyl group-containing (meth)acrylate-based monomer comprises methyl (meth)acrylate, ethyl (meth)acrylate, n-propyl (meth)acrylate, isopropyl (meth)acrylate, n-butyl (meth)acrylate, isobutyl (meth)acrylate, n-pentyl (meth)acrylate, isopentyl (meth)acrylate, n-hexyl (meth)acrylate, isohexyl (meth)acrylate, n-heptyl (meth)acrylate, isoheptyl (meth)acrylate, n-octyl (meth)acrylate, isooctyl (meth)acrylate, ethylhexyl (meth)acrylate, n-nonyl (meth)acrylate, isononyl (meth)acrylate, n-decyl (meth)acrylate, and isodecyl It may include at least one of (meth)acrylates. When a (meth)acrylate compound containing an alkyl group having the number of carbon atoms in the aforementioned range is used as the first (meth)acrylate-based monomer, the deterioration of the physical properties of the adhesive layer can be suppressed.

[0045] According to one embodiment of the present invention, based on 100 parts by weight of the monomer mixture, the content of the alkyl group-containing (meth)acrylate-based monomer may be 60 parts by weight or more and 85 parts by weight or less, 65 parts by weight or more and 82.5 parts by weight or less, 70 parts by weight or more and 80 parts by weight or less, or 72.5 parts by weight or more and 78 parts by weight or less. When the content of the alkyl group-containing (meth)acrylate-based monomer is within the aforementioned range, the adhesive composition for semiconductor processes may have excellent adhesive strength and may possess physical properties required for the substrate for semiconductor processes.

[0046] According to one embodiment of the present invention, a polar group-containing (meth)acrylate-based monomer may include a hydroxyl group as a polar group. The polar group-containing (meth)acrylate-based monomer may include at least one of 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, 6-hydroxyhexyl (meth)acrylate, 8-hydroxyoctyl (meth)acrylate, 2-hydroxyethylene glycol (meth)acrylate, and 2-hydroxypropylene glycol (meth)acrylate. By using a (meth)acrylate-based monomer containing a hydroxyl group, the glass transition temperature and weight-average molecular weight of the (meth)acrylate copolymer can be controlled to achieve the physical properties required for the substrate for the semiconductor process.

[0047] According to one embodiment of the present invention, with respect to 100 parts by weight of the monomer mixture, the content of the polar group-containing (meth)acrylate-based monomer may be 15 parts by weight or more and 40 parts by weight or less, 17.5 parts by weight or more and 35 parts by weight or less, 20 parts by weight or more and 30 parts by weight or less, or 20 parts by weight or more and 25 parts by weight or less. When the content of the polar group-containing (meth)acrylate-based monomer is within the aforementioned range, the adhesive composition for semiconductor processes may have excellent adhesive strength, and the glass transition temperature and weight-average molecular weight of the (meth)acrylate-based copolymer may be controlled to an appropriate range to realize the physical properties required for the substrate for semiconductor processes.

[0048] According to one embodiment of the present invention, the (meth)acrylic copolymer may be a reaction product of the polymer of the monomer mixture and the (meth)acryloyl group-containing isocyanate compound. Specifically, the (meth)acrylic copolymer may be formed through an addition reaction between the polymer and the (meth)acryloyl group-containing isocyanate compound. In this case, the addition reaction may refer to an addition polymerization reaction, and through the addition reaction, the hydroxyl group present at the end of the polymer reacts with the isocyanate group of the (meth)acryloyl group-containing isocyanate compound to form urethane bonds on the side chains of the (meth)acrylic copolymer. As urethane bonds are formed on the side chains of the (meth)acrylic copolymer, mechanical properties such as the shear strength of the adhesive layer containing the adhesive composition for semiconductor processes can be improved, and properties required for the substrate for semiconductor processes can be realized.

[0049] In addition, by introducing the (meth)acryloyl group-containing isocyanate compound into the (meth)acrylic copolymer, the adhesive composition for semiconductor processes can more easily realize properties of absorbing an excimer laser and properties of reduced adhesion after photocuring.

[0050] According to one embodiment of the present invention, the (meth)acryloyl group-containing isocyanate compound may include at least one of methacryloyloxyethyl isocyanate (MOI) and acryloyloxyethyl isocyanate (AOI).

[0051] According to one embodiment of the present invention, the content of the (meth)acryloyl group-containing isocyanate compound may be 65 mol% or more and 90 mol% or less with respect to 100 mol% of the polar group-containing (meth)acrylate monomer. Specifically, with respect to 100 mol% of the polar group-containing (meth)acrylate monomer used in the manufacture of the polymer, the content may be 65 mol% or more and 90 mol% or less, 70 mol% or more and 90 mol% or less, 75 mol% or more and 90 mol% or less, 80 mol% or more and 90 mol% or less, or 85 mol% or more and 90 mol% or less. When the content of the (meth)acryloyl group-containing isocyanate compound is within the aforementioned range, the mechanical properties of the semiconductor process composition may be improved, and the properties required for the semiconductor process substrate may be realized. In addition, when the content of the above (meth)acryloyl group-containing isocyanate-based compound is within the aforementioned range, the adhesive composition for semiconductor processes can more easily realize properties of absorbing an excimer laser and properties of reduced adhesive strength after photocuring, and the light transmittance does not change significantly even when heat-treated at a high temperature (e.g., 240°C), making it easy to apply to the semiconductor package manufacturing process.

[0052] According to one embodiment of the present invention, the adhesive composition for semiconductor processes may further include a curing agent. In this case, the curing agent may be a thermosetting agent, and any thermosetting agent used in the industry may be used without limitation. For example, an isocyanate-based curing agent may be used as the curing agent, but the type of curing agent is not limited.

[0053] According to one embodiment of the present invention, the content of the curing agent may be 0.5 parts by weight or more and 1.5 parts by weight or less with respect to 100 parts by weight of the adhesive binder resin. When the content of the curing agent is within the aforementioned range, the adhesive composition for semiconductor processes can effectively form an adhesive layer when heat-treated at a temperature of 100°C or higher and 150°C or lower.

[0054] According to one embodiment of the present invention, the adhesive composition for semiconductor processes may have a light transmittance of 10% or less for light having a wavelength value of 310 nm. Specifically, the adhesive composition for semiconductor processes may have a light transmittance of 9% or less, 8% or less, 7% or less, 6% or less, 4% or less, 3% or less, 2% or less, 1% or less, 0.5% or less, or 0.3% or less. Additionally, the adhesive composition for semiconductor processes may have a light transmittance of 0.1% or more, 0.3% or more, 0.5% or more, 1% or more, 2% or more, or 3% or more for light having a wavelength value of 310 nm. The adhesive composition for semiconductor processes, which satisfies the aforementioned ranges for light transmittance of light having a wavelength value of 310 nm, can effectively absorb an excimer laser.

[0055] According to one embodiment of the present invention, the adhesive composition for a semiconductor process can satisfy the following mathematical formula 1.

[0056] [Mathematical Formula 1]

[0057] 0 ≤ (T2-T1) / T1 ≤ 0.4

[0058] In the above mathematical formula 1, T1 is the initial light transmittance (%) of the adhesive composition for semiconductor processes for light having a wavelength value of 310 nm, and T2 is the light transmittance (%) of the adhesive composition for semiconductor processes for light having a wavelength value of 310 nm after heat treatment at 240 °C for 10 minutes. Specifically, the value of (T2-T1) / T1 in the above mathematical formula 1 may be 0 or more and 0.35 or less, 0 or more and 0.3 or less, 0 or more and 0.25 or less, 0 or more and 0.2 or less, 0 or more and 0.15 or less, or 0 or more and 0.1 or less. The semiconductor process composition satisfying the above mathematical formula 1 can effectively absorb an excimer laser and, even when heat-treated at a high temperature (e.g., 240 °C), the light transmittance does not change significantly, making it easy to apply to a semiconductor package manufacturing process.

[0059] According to one embodiment of the present invention, the adhesive composition for semiconductor processes may have a degree of curing of 50% or more upon photocuring. Specifically, the adhesive composition for semiconductor processes may have a degree of curing of 60% or more, or 70% or more, and 90% or less, or 80% or less upon photocuring. The adhesive composition for semiconductor processes, having a degree of curing that satisfies the aforementioned range after photocuring, can be effectively cured as light is irradiated, thereby allowing the adhesiveness to be reduced more easily. The degree of curing of the semiconductor adhesive composition after photocuring can be calculated using FT-IR as described below, through the C=C (carbon-to-carbon double bond) peak area before and after light irradiation.

[0060] According to one embodiment of the present invention, the adhesive composition for a semiconductor process may have an adhesive strength of 30 gf / in or less after photocuring. Specifically, the adhesive strength of the adhesive layer containing the photocurable of the adhesive composition for a semiconductor process to a wafer may be 30 gf / in or less, 20 gf / in or less, 10 gf / in or less, 7.5 gf / in or less, 5 gf / in or less, or 3.5 gf / in or less. Additionally, the adhesive composition for a semiconductor process may have an adhesive strength of 2 gf / in or more, 2.5 gf / in or more, 3 gf / in or more, or 4 gf / in or more after photocuring. The adhesive composition for a semiconductor process, having an adhesive strength satisfying the aforementioned ranges after photocuring, can easily achieve the physical properties required for a semiconductor process film used in the semiconductor package manufacturing method described later.

[0061] In order to measure the adhesive strength of the above semiconductor process adhesive composition after photocuring, UV having a wavelength range of 200 nm to 400 nm can be irradiated onto the semiconductor process adhesive composition under conditions of 2,000 mJ to 4,000 mJ.

[0062] According to one embodiment of the present invention, the adhesive composition for a semiconductor process can satisfy the following mathematical formula 2.

[0063] [Mathematical Formula 2]

[0064] 0.5 ≤ (A1-A2) / A1 ≤ 0.99

[0065] In the above mathematical formula 2, A1 is the initial adhesive strength (gf / in) of the adhesive composition for semiconductor processes, and A2 is the adhesive strength (gf / in) of the adhesive composition for semiconductor processes after photocuring. Specifically, the value of (A1-A2) / A1 in the above mathematical formula 2 may be 0.5 or more and 0.99 or less, 0.6 or more and 0.99 or less, 0.7 or more and 0.99 or less, 0.8 or more and 0.99 or less, 0.9 or more and 0.99 or less, or 0.95 or more and 0.99 or less. The above semiconductor process composition satisfying the above mathematical formula 2 effectively reduces the adhesive strength after photocuring compared to before photocuring, thereby easily realizing the physical properties required for the semiconductor process film used in the semiconductor package manufacturing method described later.

[0067] One embodiment of the present invention provides a semiconductor process film comprising: a substrate; and an adhesive layer comprising the adhesive composition for the semiconductor process.

[0068] A semiconductor process film according to one embodiment of the present invention effectively absorbs a laser irradiated during the debonding process of a wafer carrier, and after light irradiation, the adhesive strength is effectively reduced so that it can be easily peeled off from the wafer.

[0069] According to one embodiment of the present invention, the adhesive layer may include an adhesive composition for a semiconductor process according to the above embodiment. Specifically, the adhesive layer may include a thermocured (or dried) product of the adhesive composition for a semiconductor process. That is, after applying a liquid adhesive composition for a semiconductor process onto the substrate, a film-type adhesive layer may be formed by heat treating at a temperature of 100°C or higher and 150°C or lower for 3 to 10 minutes.

[0070] According to one embodiment of the present invention, the thickness of the adhesive layer may be 25 μm or more. Specifically, the thickness of the adhesive layer may be 25 μm or more and 50 μm or less, 27 μm or more and 48 μm or less, 30 μm or more and 45 μm or less, 30 μm or more and 42 μm or less, 30 μm or more and 40 μm or less, or 25 μm or more and 35 μm or less. When the thickness of the adhesive layer is within the aforementioned range, the semiconductor process film can be stably adhered to a semiconductor wafer, and excellent adhesion reliability can be achieved during the wafer processing process.

[0071] According to one embodiment of the present invention, the substrate may be a polyethylene terephthalate film, a polyolefin film, a PEN (polyethylenemaphthatlate) film, an ethylene-vinyl acetate film, a polybutylene terephthalate film, a polypropylene film, or a polyethylene film, but the types of the substrate are not limited.

[0072] According to one embodiment of the present invention, the thickness of the substrate may be 10 μm or more and 100 μm or less. Specifically, the thickness of the substrate may be 20 μm or more and 80 μm or less, 40 μm or more and 60 μm or less, 10 μm or more and 70 μm or less, 15 μm or more and 65 μm or less, 25 μm or more and 62.5 μm or less, 30 μm or more and 57 μm or less, 35 μm or more and 55 μm or less, 45 μm or more and 50 μm or less, 40 μm or more and 100 μm or less, 42.5 μm or more and 75 μm or less, 45 μm or more and 72.5 μm or less, or 50 μm or more and 65 μm or less. When the thickness of the substrate is within the aforementioned range, the semiconductor process film with excellent mechanical properties can be realized.

[0073] One embodiment of the present invention provides a method for manufacturing a semiconductor package comprising: preparing a wafer stack including a wafer and a carrier provided on one side of the wafer; attaching an adhesive layer of a semiconductor process film to the other side of the wafer; irradiating a laser onto the wafer stack to peel off the carrier on one side of the wafer; processing the wafer; and irradiating light onto the adhesive layer to cure it, and then peeling off the semiconductor process film from the other side of the wafer.

[0074] A semiconductor package manufacturing method according to one embodiment of the present invention can easily peel off a carrier using an excimer laser after processing a wafer and effectively peel off a semiconductor process film through light irradiation, thereby effectively improving semiconductor package manufacturing efficiency.

[0075] According to one embodiment of the present invention, the wafer may be an unprefabricated silicon wafer itself or a prefabricated wafer. For example, the prefabricated wafer may be a device wafer having a functional coating on its surface or having wiring, bumps, etc. formed thereon. However, the type of wafer is not limited, and any wafer used in the industry may be applied without limitation.

[0076] FIG. 1 is a schematic diagram illustrating a semiconductor package manufacturing method according to one embodiment of the present invention.

[0077] Referring to FIG. 1 (a), a wafer stack can be prepared by providing a carrier (10) on one side of a wafer (W). At this time, the carrier may be a wafer carrier, and any material used as a wafer carrier in the industry may be used without limitation. For example, glass, silicon, silicon nitride, or quartz may be used as the carrier.

[0078] Referring to FIG. 1(b), the adhesive layer (22) of the semiconductor process film according to the above-described embodiment can be laminated so as to be attached to the other side of the wafer (W). Afterward, a laser (L) can be irradiated from the carrier (10) in a direction toward the substrate (21) of the semiconductor process film. At this time, the laser may be the excimer laser described above. Meanwhile, as described above, the adhesive layer containing the semiconductor process adhesive composition can absorb the laser by including a laser absorber, thereby effectively preventing the laser from reaching the substrate. Through this, the deformation or damage of the substrate during the debonding (peeling) process of the carrier can be effectively suppressed, thereby effectively maintaining excellent adhesion reliability of the semiconductor process film to the wafer.

[0079] Referring to FIG. 1 (c), after irradiating with a laser (L), the carrier (10) can be debonded on one side of the wafer (W). Subsequently, the semiconductor wafer can be processed using a method generally used in the industry. After the processing of the semiconductor wafer is completed, light can be irradiated from the substrate in a direction toward the wafer. At this time, the light can be ultraviolet (UV) light having a wavelength range of 200 nm to 400 nm and can be irradiated under conditions of 2,000 mJ to 4,000 mJ. As the light is irradiated, the adhesive layer is photocured, and the adhesive strength can be significantly reduced.

[0080] Referring to (d) of FIG. 1, the adhesive layer (22) with reduced adhesive strength can be peeled off (debonded) from the other side of the wafer (W) to obtain a processed semiconductor wafer.

[0082] Hereinafter, the present invention will be described in detail with reference to examples to specifically explain the invention. However, the embodiments according to the present invention may be modified in various different forms, and the scope of the present invention is not to be interpreted as being limited to the embodiments described below. The embodiments of this specification are provided to more completely explain the present invention to those with average knowledge in the art.

[0083] Hereinafter, in order to specifically explain the present invention, it will be described in detail with reference to examples.

[0085] Example 1

[0086] Manufacture of adhesive binder resin

[0087] A mixture of monomers consisting of 76.35 g of 2-ethylhexyl acrylate (2-EHA) and 23.65 g of hydroxyethyl acrylate (HEA) was introduced into a reactor equipped with a cooling device to facilitate temperature control and reflux of nitrogen gas. Subsequently, 200 g of ethyl acetate (EAc), a solvent, was introduced based on 100 g of the monomer mixture, and the mixture was thoroughly mixed at 30°C for at least 30 minutes while injecting nitrogen to remove oxygen from the reactor. Afterward, the temperature was raised and maintained at 65°C, 0.1 g of V-60 (Azobisisbutylonitrile), a reaction initiator, was added in portions, and the reaction was initiated. The mixture was then polymerized for 6 hours to produce a primary reaction product (polymer).

[0088] 26.88 g of 2-methachlorooxyethyl isocyanate (MOI) (85 mol%) relative to HEA in the primary reactant) and 0.27 g of catalyst (DBTDL: dibutyl tin dilaurate) were mixed with the above primary reactant and reacted at 40°C for 24 hours to introduce a UV curing agent into the polymer side chains in the primary reactant, thereby producing a (meth)acrylate copolymer (adhesive binder resin) having photopolymerizable side chains. At this time, the weight-average molecular weight of the produced (meth)acrylate copolymer (adhesive binder resin) was approximately 700,000 g / mol.

[0090] Preparation of adhesive compositions for semiconductor processes

[0091] Irgacure 819 (IGM Resins) was prepared as a photoinitiator, 2-(4,6-diphenyl-1,3,5-triazine-2-yl)-5-[2-(2-ethylhexanoyloxy)ethoxy]-phenol (LA46, manufactured by ADEKA), a triazine-based compound, was prepared as a laser absorber, and AK-75, an isocyanate-based curing agent, was prepared as a curing agent.

[0092] Subsequently, a pressure-sensitive adhesive composition for semiconductor processes was prepared by mixing 2 parts by weight of a photoinitiator, 1 part by weight of a laser absorber, and 0.95 parts by weight of a curing agent with 100 parts by weight of the (meth)acrylate copolymer prepared above.

[0094] Manufacturing of films for semiconductor processes

[0095] The adhesive composition for semiconductor processes prepared above was diluted with methyl ethyl ketone (MEK), a solvent, to achieve a viscosity (about 1,000 cp) suitable for coating, and mixed for 15 minutes using a stirrer. The adhesive composition for semiconductor processes was left at room temperature to remove bubbles generated during mixing, and then applied onto a release-treated polyethylene terephthalate film (thickness 38 μm) using an applicator. Afterward, an adhesive layer with a thickness of about 30 μm was formed by drying at 110°C for 4 minutes using a Mathis oven. Subsequently, the adhesive layer was laminated onto the corona-treated surface of a 50 μm thick PEN film (Q65H, Toyob Co.) that had been corona-treated on one side as a substrate, and aged at 40°C for 3 days to produce a semiconductor process film.

[0097] Example 2

[0098] A (meth)acrylate-based copolymer (adhesive binder resin) prepared in Example 1 above was prepared. Subsequently, an adhesive composition for semiconductor processes and a film for semiconductor processes were prepared in the same manner as in Example 1 above, except that Tinuvin 1600 (manufactured by BASF), a triazine-based compound, was used as a laser absorber.

[0100] Example 3

[0101] A (meth)acrylate-based copolymer (adhesive binder resin) prepared in Example 1 above was prepared. Subsequently, an adhesive composition for semiconductor processes and a film for semiconductor processes were prepared in the same manner as in Example 1 above, except that Uvinul 3030 (manufactured by BASF), a cyanoacrylate-based compound, was used as a laser absorber.

[0103] Example 4

[0104] In the above Example 3, an adhesive composition for a semiconductor process and a film for a semiconductor process were prepared in the same manner as in Example 3, except that the content of the laser absorber was adjusted to 2 parts by weight per 100 parts by weight of the adhesive binder resin.

[0106] Example 5

[0107] In the above Example 3, except that Omnirad 907 (IGM Resins) was used as the photoinitiator and a PET film (TOR50, SKC) with a thickness of 50 μm was used as the substrate, an adhesive composition for semiconductor processes and a film for semiconductor processes were prepared in the same manner as in the above Example 3.

[0109] Adhesive composition for semiconductor processes write Photoinitiator Laser absorber type Content (parts by weight) type Content (parts by weight) Example 1 A1 2 B1 1 C1 Example 2 A1 2 B2 1 C1 Example 3 A1 2 B3 1 C1 Example 4 A1 2 B3 2 C1 Example 5 A2 2 B3 1 C2

[0110] In Table 1 above, A1 represents Irgacure 819, A2 represents Omnirad 907, B1 represents LA46, B2 represents Tinuvin 1600, B3 represents Uvinul 3030, C1 represents PEN film, and C2 represents PET film. In addition, in Table 1 above, the content of the photoinitiator and laser absorber is (parts by weight) per 100 parts by weight of the (meth)acrylate copolymer (adhesive binder resin).

[0112] Comparative Example 1

[0113] A semiconductor process adhesive composition and a semiconductor process film were prepared in the same manner as in Example 1, except that a laser absorber was not used when preparing the semiconductor process adhesive composition in Example 1.

[0115] Comparative Example 2

[0116] A semiconductor process adhesive composition and a semiconductor process film were prepared in the same manner as in Example 1, except that SONGSORB UV-1 (Songwon Industrial Co., Ltd.), a benzoate-based compound, was used as a laser absorber.

[0118] Comparative Example 3

[0119] A semiconductor process adhesive composition and a semiconductor process film were prepared in the same manner as in Example 1, except that SONGSORB CS 928 (Songwon Industrial Co., Ltd.), a benzotriazole-based compound, was used as a laser absorber.

[0121] Comparative Example 4

[0122] A semiconductor process adhesive composition and a semiconductor process film were prepared in the same manner as in Example 1, except that SONGSORB CS 312 (Songwon Industrial Co., Ltd.), an oxanilide-based compound, was used as a laser absorber.

[0124] Adhesive composition for semiconductor processes write Photoinitiator Laser absorber type Content (parts by weight) type Content (parts by weight) Comparative Example 1 A1 2 - C1 Comparative Example 2 A1 2 B4 1 C1 Comparative Example 3 A1 2 B5 1 C1 Comparative Example 4 A1 2 B6 2 C1

[0125] In Table 2 above, A1 represents Irgacure 819, B4 represents SONGSORB UV-1, B5 represents SONGSORB CS 928, B6 represents Uvinul 3030, B6 represents SONGSORB CS 312, and C1 represents PEN film. Also, in Table 2 above, the content of the photoinitiator and laser absorber is (parts by weight) per 100 parts by weight of the (meth)acrylate copolymer (adhesive binder resin).

[0126] A semiconductor process adhesive composition and a semiconductor process film were prepared in the same manner as in Example 1, except that a laser absorber was not used when preparing the semiconductor process adhesive composition in Example 1.

[0128] Experimental Example

[0129] Light transmittance measurement

[0130] The light transmittance of the adhesive layer itself prepared in Examples 1 to 5 and Comparative Examples 1 to 4 was measured as follows.

[0131] An adhesive layer prepared using the adhesive composition for semiconductor processes prepared in Example 1 was laminated alone onto an LCD bare glass (0.5 mm thickness) to produce a sample of size 50 mm X 50 mm. Subsequently, light transmittance in the wavelength range of 200 nm to 800 nm was measured using Shimadzu-UV2500, and then the light transmittance value at 310 nm was confirmed.

[0132] Meanwhile, the above-mentioned prepared sample was placed in an oven and stored at 240°C for 10 minutes, and then the light transmittance in the wavelength range of 200 nm to 800 nm was measured using Shimadzu-UV2500, and the light transmittance value at 310 nm was confirmed.

[0133] In addition, light transmittance was measured for the adhesive layers prepared in Examples 2 to 5 and Comparative Examples 1 to 4 using the same method.

[0134] The light transmittance before heat treatment, the light transmittance after heat treatment, and the rate of change in light transmittance calculated through the above mathematical formula 1 are shown in Table 3 below.

[0136] Hardness measurement

[0137] The degree of curing for the adhesive layers prepared in Examples 1 to 5 and Comparative Examples 1 to 4 was measured as follows.

[0138] A semiconductor process film having an adhesive layer prepared using the adhesive composition for semiconductor processes prepared in Example 1 was prepared. Subsequently, 3,000 mJ of UV (approx. 350 nm to 400 nm) was irradiated from the substrate of the semiconductor process film toward the adhesive layer, and the degree of curing was measured by calculating the change in the IR peak.

[0139] Specifically, measurements were taken in FT-IR ATR mode, and the C=C peak area at 814 nm before and after UV irradiation was confirmed, and the degree of curing (%) was calculated using the following Equation 3.

[0140] [Mathematical Formula 3]

[0141] Degree of Curing (%) = (1 - ((Area of ​​the C=C peak at 814 nm after UV irradiation) / (Area of ​​the C=C peak at 814 nm before UV irradiation))) X 100

[0142] In addition, the degree of curing was measured for the adhesive layers prepared in Examples 2 to 5 and Comparative Examples 1 to 4 using the same method, and the results are shown in Table 3 below.

[0144] Adhesion strength measurement

[0145] The adhesion strength of the adhesive layer prepared in Examples 1 to 5 and Comparative Examples 1 to 4 on the wafer was measured as follows.

[0146] A semiconductor process film equipped with an adhesive layer prepared using the adhesive composition for semiconductor processes prepared in Example 1 was prepared. Subsequently, the semiconductor process film was cut to a size of 1 inch x 25 cm, the adhesive layer was laminated onto a wafer, and left at room temperature for 1 day. Afterward, using a texture analyzer (TA), at a speed of 0.3 mpm and a peel angle of 180 o The film for the semiconductor process was peeled off from the wafer, and the peel strength (adhesion strength) was measured.

[0147] Meanwhile, for a separate sample prepared above, 3,000 mJ of UV (approx. 350 nm to 400 nm) was irradiated in a direction toward the adhesive layer from the substrate of the semiconductor process film. Afterwards, the peel strength (adhesion strength) was measured in the same manner as above.

[0148] In addition, the peel strength (adhesion strength) was measured in the same way for the adhesive layers prepared in Examples 2 to 5 and Comparative Examples 1 to 4.

[0149] The peel strength (adhesion strength) before UV irradiation, the peel strength (adhesion strength) after UV irradiation, and the rate of change of peel strength (adhesion strength) calculated through the above mathematical formula 2 are shown in Table 3 below.

[0151] Appearance evaluation

[0152] For the semiconductor process films prepared in Examples 1 to 5 and Comparative Examples 1 to 4 above, an appearance evaluation was performed after irradiating with an excimer laser.

[0153] A semiconductor process film having an adhesive layer prepared using the adhesive composition for semiconductor processes prepared in Example 1 was prepared. Subsequently, an excimer laser having a wavelength of 308 nm was irradiated from the adhesive layer of the semiconductor process film toward the substrate. Subsequently, if bubbles, fume generation, or lifting occurred at the interface between the substrate and the adhesive layer of the semiconductor process film, it was evaluated as "X", and if not, it was evaluated as "O".

[0154] In addition, an appearance evaluation was performed on the semiconductor process films prepared in Examples 2 to 5 and Comparative Examples 1 to 4, and the results are shown in Table 3 below.

[0156] Light transmittance at 310 nm (%) Hardness (%) adhesiveness Appearance evaluation beginning 240℃, 10 min Rate of change (Mathematical Formula 1) Before UV curing (gf / in) After UV curing (gf / in) Rate of change (Mathematical Formula 2) Example 1 6.3 8 0.27 76.2 90.7 4 0.96 O Example 2 0.1 0.1 0 73.5 98.2 3.4 0.97 O Example 3 1.5 1.8 0.2 75.1 87.2 3.2 0.96 O Example 4 0.1 0.1 0 72.8 94.7 3.8 0.96 O Example 5 1.6 2.1 0.31 74.6 111.9 5.2 0.95 O Comparative Example 1 46.3 54.3 0.17 73.8 98.6 4.8 0.95 X Comparative Example 2 0.1 48.4 483 73.7 90 3.8 0.96 O Comparative Example 3 4 50.8 11.7 74.1 93 4.2 0.96 O Comparative Example 4 2.3 55.7 23.22 73.3 78 4.6 0.94 O

[0157] Referring to Table 3 above, it can be seen that by using the adhesive composition for semiconductor processes prepared in Examples 1 to 5 of the present invention, it is possible to provide an adhesive layer that has low initial light transmittance at 310 nm, a low rate of change in light transmittance after heat treatment, excellent adhesive strength before UV curing, and effectively reduced adhesive strength after UV curing. In addition, it can be seen that in the case of a semiconductor process film equipped with an adhesive layer prepared using the adhesive composition for semiconductor processes prepared in Examples 1 to 5, the appearance evaluation results after excimer laser irradiation are excellent. Explanation of the symbols

[0158] W: Wafer 10: Suitcase 21: Entry 22: Adhesive layer L: Laser

Claims

Claim 1 A semiconductor process adhesive composition comprising: an adhesive binder resin; a photoinitiator; and a laser absorber; wherein the laser absorber absorbs a laser having a wavelength value of one of 250 nm to 350 nm, and the photoinitiator is activated by light having a wavelength different from that of the laser, and wherein the light transmittance for light having a wavelength value of 310 nm is 10% or less. Claim 2 An adhesive composition for a semiconductor process according to claim 1, wherein the laser absorber absorbs an excimer laser having a wavelength value of one of 300 nm to 320 nm. Claim 3 An adhesive composition for a semiconductor process according to claim 1, wherein the laser absorber comprises at least one of a triazine-based compound and a cyanoacrylate-based compound. Claim 4 An adhesive composition for a semiconductor process according to claim 1, wherein the weight ratio of the photoinitiator to the laser absorber is 1:0.3 to 1:1.

5. Claim 5 An adhesive composition for a semiconductor process according to claim 1, wherein the content of the laser absorber is 0.5 parts by weight or more and 3 parts by weight or less per 100 parts by weight of the adhesive binder resin. Claim 6 An adhesive composition for a semiconductor process according to claim 1, wherein the content of the photoinitiator is 1 part by weight or more and 5 parts by weight or less per 100 parts by weight of the adhesive binder resin. Claim 7 A semiconductor process adhesive composition according to claim 1, wherein the adhesive binder resin comprises a (meth)acrylic copolymer which is a reaction product of a monomer mixture comprising a (meth)acrylate monomer containing an alkyl group having 1 to 10 carbon atoms and a (meth)acrylate monomer containing a polar group, and a (meth)acrylic copolymer containing an isocyanate compound containing a (meth)acryloyl group. Claim 8 An adhesive composition for a semiconductor process according to claim 7, wherein, based on 100 parts by weight of the monomer mixture, the content of the alkyl group-containing (meth)acrylate-based monomer is 60 parts by weight or more and 85 parts by weight or less. Claim 9 An adhesive composition for a semiconductor process according to claim 7, wherein, with respect to 100 parts by weight of the monomer mixture, the content of the polar group-containing (meth)acrylate-based monomer is 15 parts by weight or more and 40 parts by weight or less. Claim 10 A semiconductor process adhesive composition according to claim 7, wherein the content of the (meth)acryloyl group-containing isocyanate-based compound is 65 mol% or more and 90 mol% or less with respect to 100 mol% of the polar group-containing (meth)acrylate-based monomer. Claim 11 An adhesive composition for a semiconductor process according to claim 1, further comprising a curing agent, wherein the content of the curing agent is 0.5 parts by weight or more and 1.5 parts by weight or less per 100 parts by weight of the adhesive binder resin. Claim 12 delete Claim 13 A semiconductor process adhesive composition according to claim 1, satisfying the following mathematical formula 1: [Mathematical Formula 1] 0 ≤ (T2-T1) / T1 ≤ 0.4 In the above mathematical formula 1, T1 is the initial light transmittance (%) of the semiconductor process adhesive composition for light having a wavelength value of 310 nm, and T2 is the light transmittance (%) of the semiconductor process adhesive composition for light having a wavelength value of 310 nm after heat treatment at 240 ℃ for 10 minutes. Claim 14 An adhesive composition for semiconductor processes according to claim 1, wherein the degree of curing upon photocuring is 50% or more. Claim 15 An adhesive composition for semiconductor processes according to claim 1, wherein the adhesive strength after photocuring is 30 gf / in or less. Claim 16 In claim 1, an adhesive composition for a semiconductor process satisfying the following mathematical formula 2: [Mathematical Formula 2] 0.5 ≤ (A1-A2) / A1 ≤ 0.99 In the above mathematical formula 2, A1 is the initial adhesive strength (gf / in) of the adhesive composition for a semiconductor process, and A2 is the adhesive strength (gf / in) of the adhesive composition for a semiconductor process after photocuring. Claim 17 A semiconductor process film comprising: a film; and an adhesive layer comprising an adhesive composition for a semiconductor process according to claim 1. Claim 18 A method for manufacturing a semiconductor package comprising: a step of preparing a wafer stack including a wafer and a carrier provided on one side of the wafer; a step of attaching an adhesive layer of a semiconductor process film according to claim 17 to the other side of the wafer; a step of irradiating a laser onto the wafer stack to peel off the carrier on one side of the wafer; a step of processing the wafer; and a step of irradiating light onto the adhesive layer to cure it, and then peeling off the semiconductor process film from the other side of the wafer.

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