Array sensor

Abstract

The first light-receiving element of the array sensor of the present invention outputs a first output signal corresponding to the intensity of incident light from the output section 32. The second light-receiving element of the array sensor has a phototransistor structure, which includes a gate electrode, a source electrode, a drain electrode, and a photoelectric conversion section. In the second light-receiving element, a current flows between the source electrode and the drain electrode with a gain corresponding to the voltage applied to the gate electrode, depending on the intensity of light incident on the photoelectric conversion section. The output section of the first light-receiving element is electrically connected to the gate electrode of the second light-receiving element, and the gain of the second light-receiving element varies according to the first output signal output from the output section of the first light-receiving element. The output is based at least on a second output signal from the second light-receiving element.