Semiconductor devices and data storage systems including the same
The semiconductor device with stacked gate electrodes and contact plugs with diffusion barriers addresses the challenge of increasing data storage capacity and reliability in semiconductor devices, improving electrical connections and preventing material diffusion.
US12677459B2Active Publication Date: 2026-07-07SAMSUNG ELECTRONICS CO LTD
Patent Information
- Authority / Receiving Office
- US · United States
- Patent Type
- Patents(United States)
- Current Assignee / Owner
- SAMSUNG ELECTRONICS CO LTD
- Filing Date
- 2023-09-07
- Publication Date
- 2026-07-07
Smart Images
Figure US12677459-D00000_ABST
Abstract
A semiconductor device includes: a first substrate structure including a first substrate, circuit devices, and first bonding pads; and a second substrate structure connected to the first substrate structure. The second substrate structure includes: a source structure; gate electrodes stacked and spaced apart from each other below the source structure in a first direction; first contact plugs electrically connected to the gate electrodes and extending in the first direction; a second contact plug extending in the first direction in an external side of the gate electrodes and electrically connected to the source structure through an upper end; a diffusion barrier between the second contact plug and the source structure, wherein a level of a lower end thereof is higher than a level of an uppermost surface of the gate electrodes; and second bonding pads below the gate electrodes and connected to the first bonding pads.
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