Method of forming semiconductor devices and circuits therefor
By controlling the activation and deactivation of gallium nitride transistors through multi-level drive and timing circuits, the problem of inaccurate drive signal control is solved, and efficient and reliable operation of the transistors is achieved.
CN113078805BActive Publication Date: 2026-07-03SEMICON COMPONENTS IND LLC
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SEMICON COMPONENTS IND LLC
- Filing Date
- 2020-12-22
- Publication Date
- 2026-07-03
AI Technical Summary
Technical Problem
Existing technologies struggle to effectively control the enable value, duration of enable value, and timing of control signals for gallium nitride transistors, leading to reduced efficiency and device damage.
Method used
By employing multi-stage drive circuits and timing circuits, multiple voltage levels are generated to control the enabling and disabling of transistors, including enable, hold, and disable intervals. Dead time and negative voltage are used to control the gate-source voltage, reducing stress and damage.
Benefits of technology
It improves the control precision of the drive signal, reduces transistor damage and dynamic on-resistance, and enhances the efficiency and reliability of the device.
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Abstract
The invention is entitled "Method of forming semiconductor devices and circuits thereof." The invention provides a drive circuit configured to form Vgs of a transistor to a negative value during a time interval in which a second transistor connected to the first transistor is enabled, in one embodiment.
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