Loudspeaker comprising a micro-electromechanical unit

The loudspeaker with a micro-electromechanical unit using Al(1-x)Ga(x)N and GaN layers addresses the size and power consumption challenges of audio devices by enhancing SNR and reducing on-resistance through piezoelectric diaphragm technology, enabling efficient and compact audio performance.

US20260138863A1Inactive Publication Date: 2026-05-21EPINOVATECH AB
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Patent Information

Application Number
US18/705833
Authority / Receiving Office
US · United States
Patent Type
Applications(United States)
Current Assignee / Owner
Priority Date
2021-10-29
Filing Date
2022-10-26
Publication Date
2026-05-21
Estimated Expiration
Not applicable · inactive patent

AI Technical Summary

Technical Problem

Existing audio devices, such as wireless earbuds, face a compromise between high fidelity audio quality, minimal size, and low power consumption, particularly due to the need for built-in batteries and wireless communication, which affects on-resistance and signal-to-noise ratio (SNR).

Method used

A loudspeaker comprising a micro-electromechanical unit with a diaphragm made of Al(1-x)Ga(x)N and GaN layers, a support structure, and an electrode, utilizing piezoelectric properties to generate sound waves without a solenoid, and incorporating a superlattice for enhanced piezoelectric effect and a backplate with through-holes for pressure amplification, along with a transistor structure for improved conductivity.

Benefits of technology

The solution reduces power demand, increases SNR, and allows for a compact size while maintaining high audio quality by integrating the diaphragm as both a loudspeaker and microphone, utilizing GaN HEMT transistors for efficient power management.

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Abstract

A loudspeaker device (200) is provided. The loudspeaker device (200) comprises a micro-electromechanical unit (100). The micro-electromechanical unit (100) comprises a diaphragm (10) having a planar extension. The diaphragm (10) comprises a semiconductor structure (20) comprising a first (22) and a second (24) layer, each layer extending in the planar extension. The first layer (22) comprises Al(1-x)Ga(x)N, wherein 0.2≤x≤0.4, and the second layer (24) comprises GaN. The diaphragm (10) is arranged to oscillate in an extension transverse to the planar extension to thereby generate sound waves. A calibrating weight (17) is arranged on a surface of the diaphragm (10). The micro-electromechanical unit (214) further comprises a support structure (30) supporting the diaphragm (10), an electrode arranged (50) on a surface of the diaphragm (10), and a resonant box.
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