Phosphorus-containing passivator, perovskite solar cell, photovoltaic module, photovoltaic system and electrical apparatus

Abstract

A phosphorus-containing passivator, a perovskite solar cell, a photovoltaic module, a photovoltaic system and an electrical apparatus. The phosphorus-containing passivator comprises an ionic compound, the ionic compound comprising a cationic group, and the cationic group having a structure as shown in a formula (I): A-L-B (I), in which A represents an organophosphorus group with a lone pair, B represents an organophosphorus salt group with positive charges, and L represents a linking group between the organophosphorus group and the organophosphorus salt group. The lone pair of the organophosphorus group can form a relatively strong P-Pb coordination bond with coordinatively unsaturated lead ions in a bulk phase and / or at upper and lower interfaces of a perovskite light-absorbing layer, thereby passivating defects of undercoordinated lead ions. In addition, the organophosphorus salt group can form low-dimensional perovskite at the upper and lower interfaces of the perovskite layer, thereby passivating the interfaces of the perovskite layer, and suppressing migration of ions. In this way, the cooperation of the organophosphorus group and the organophosphorus salt group can improve the photoelectric properties and stability of perovskite solar cells.

Description

Phosphorus-containing passivator, perovskite solar cell, photovoltaic module, photovoltaic system and electrical device

[0001] This application refers to Chinese patent application No. 202310708422.3 filed on June 14, 2023, entitled “Phosphorus-containing passivator, perovskite solar cell, photovoltaic module, photovoltaic system and electrical device”, which is incorporated into this application in its entirety by reference. Technical Field

[0002] The present application relates to the technical field of solar cells, and in particular to a phosphorus-containing passivator, a perovskite solar cell, a photovoltaic module, a photovoltaic system, and an electrical device. Background Art

[0003] Perovskite solar cells belong to the third generation of solar cells. They have many characteristics such as excellent photoelectric properties, high light absorption coefficient, long carrier lifetime and long diffusion length. They have become the leader among the third generation of new solar cells.

[0004] However, when perovskite solar cells are prepared into thin films, there are a large number of defects in the bulk and surface, including low-coordinated Pb 2+ , Pb clusters, low-coordinated halide ions, and antisite defects PbI3 generated by ion migration - , shallow energy level defect halogen X - Vacancies and A-site cation vacancies, and the presence of a large number of defects affects the photoelectric performance and stability of perovskite solar cells.

[0005] Summary of the Invention

[0006] The present application is made in view of the above-mentioned problems, and its purpose includes providing a phosphorus-containing passivator, a perovskite solar cell, a photovoltaic module, a photovoltaic system and an electrical device to improve the photoelectric performance and stability of the perovskite solar cell.

[0007] This application is achieved through the following technical solutions.

[0008] The first aspect of the present application provides a phosphorus-containing passivating agent, wherein the phosphorus-containing passivating agent includes an ionic compound, wherein the ionic compound includes a cationic group; and the cationic group has a structure shown in the following formula (I):

[0009] ALB

[0010] (I)

[0011] Wherein, A represents an organic phosphorus group with a lone pair of electrons, B represents an organic phosphorus salt group with a positive charge, and L represents a connecting group between the organic phosphorus group and the organic phosphorus salt group.

[0012] The phosphorus-containing passivator of the present application contains an organic phosphorus group with a lone pair of electrons and an organic phosphorus salt group with a positive charge. The lone pair of electrons of the organic phosphorus group can form a strong P-Pb coordination bond with the unsaturated coordinated lead ions in the bulk phase and / or at the upper and lower interfaces of the perovskite light-absorbing layer, thereby passivating low-coordinated lead ion defects; the organic phosphorus salt group can form a low-dimensional perovskite at the upper and lower interfaces of the perovskite layer, passivate the perovskite layer interface, and inhibit ion migration; therefore, the photoelectric performance and stability of the perovskite solar cell can be improved through the synergistic effect of the organic phosphorus group and the organic phosphorus salt group.

[0013] In some embodiments, the ionic compound further comprises an anionic group, wherein the anionic group comprises one or more of a halogen anion, a quasi-halogen anion, a tetrafluoroborate ion, a hexafluorophosphate ion, and a dimethylsulfonamide ion. The halogen anion and the halogen-containing anionic group can respectively passivate the iodide ion vacancy and reduce energy loss.

[0014] In some embodiments, L comprises one or more of a substituted or unsubstituted alkylene group, a substituted or unsubstituted cycloalkylene group, and a substituted or unsubstituted arylarylene group.

[0015] In some embodiments, the phosphorus-containing passivating agent has a structure shown in the following formula (II):

[0016] Wherein, R1, R2, R3, R4, and R5 include any one of substituted or unsubstituted alkyl, substituted or unsubstituted cycloalkyl, and substituted or unsubstituted aryl;

[0017] L includes any one of substituted or unsubstituted alkylene, substituted or unsubstituted cycloalkylene, and substituted or unsubstituted arylarylene;

[0018] X includes any one of a halogen anion and a halogen-containing anion group;

[0019] 1≤n1≤4, 1≤n2≤10, 1≤n3≤4, n1, n2, n3 are integers.

[0020] In some embodiments, R1, R2, R3, R4, and R5 include any one of an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 1 to 10 carbon atoms, a phenyl group, and a substituted phenyl group; the substituent in the substituted phenyl group includes one or more of a halogen, an alkyl group, a cycloalkyl group, an alkoxy group, an alkylthio group, an alkylsilyl group, and an alkoxysilyl group;

[0021] Optionally, the substituents in the substituted phenyl group include one or more of halogen, an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, an alkylthio group having 1 to 10 carbon atoms, an alkylsilyl group having 1 to 10 carbon atoms, and an alkoxysilyl group having 1 to 10 carbon atoms.

[0022] In some embodiments, R1 and R2 include any one of a cycloalkyl group and a phenyl group having 1 to 10 carbon atoms;

[0023] Optionally, the R1 and R2 are identically any one of a cycloalkyl group and a phenyl group having 1 to 10 carbon atoms.

[0024] In some embodiments, R3, R4, and R5 include any one of an alkyl group having 1 to 10 carbon atoms;

[0025] Optionally, the R3, the R4, and the R5 identically include any one of alkyl groups having 1 to 10 carbon atoms.

[0026] In some embodiments, L comprises any one of an alkylene group having 1 to 10 carbon atoms, a cycloalkylene group having 1 to 10 carbon atoms, a phenylene group, and a substituted phenylene group; the substituent in the substituted phenylene group comprises one or more of a halogen, an alkyl group, a cycloalkyl group, an alkoxy group, an alkylthio group, an alkylsilyl group, and an alkoxysilyl group;

[0027] Optionally, the substituents in the substituted phenylene group include one or more of halogen, an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, an alkylthio group having 1 to 10 carbon atoms, an alkylsilyl group having 1 to 10 carbon atoms, and an alkoxysilyl group having 1 to 10 carbon atoms.

[0028] In some embodiments, L comprises any one of alkylene groups having 1 to 10 carbon atoms.

[0029] In some embodiments, X comprises any one of an iodide ion and a boron tetrafluoride ion.

[0030] In some embodiments, the phosphorus-containing passivating agent comprises any one of the following structural formulas:

[0031] The second aspect of the present application provides a perovskite solar cell comprising the phosphorus-containing passivator of the first aspect of the present application. The perovskite solar cell containing the phosphorus-containing passivator is prepared by adding the phosphorus-containing passivator during the preparation process. The phosphorus-containing passivator can coordinately passivate low-coordinated lead ion defects, interface defects, and iodine ion vacancy defects, reducing charge energy loss in the perovskite light-absorbing layer and / or at the interface, thereby improving the photoelectric performance and stability of the perovskite solar cell.

[0032] In some embodiments, the perovskite solar cell includes a perovskite light-absorbing layer, and the perovskite light-absorbing layer contains the phosphorus-containing passivator; the phosphorus-containing passivator is directly added when preparing the perovskite light-absorbing layer to passivate the low-coordinated lead ion defects, interface defects and iodine ion vacancy defects in the perovskite light-absorbing layer.

[0033] Optionally, the phosphorus-containing passivating agent comprises 0.01% to 1% by weight of the perovskite light-absorbing layer, or optionally 0.05% to 0.5% by weight. When the phosphorus-containing passivating agent comprises 0.01% to 1% by weight of the perovskite light-absorbing layer, the perovskite light-absorbing layer can effectively passivate low-coordinated lead ion defects, interface defects, and iodine ion vacancy defects.

[0034] In some embodiments, the perovskite solar cell includes a stacked perovskite light-absorbing layer and a passivation layer, the passivation layer is located on the light-incident side or the light-exiting side of the perovskite light-absorbing layer, and the passivation layer contains the phosphorus-containing passivator; optionally, the thickness of the passivation layer is 0.1nm-10nm; optionally 1nm-10nm.

[0035] A passivation layer is formed on the upper surface or lower surface of the perovskite light-absorbing layer, which can passivate the low-coordinated lead ion defects, interface defects and iodine ion vacancy defects of the perovskite light-absorbing layer; when the thickness of the passivation layer is within the above range, the low-coordinated lead ion defects, interface defects and iodine ion vacancy defects of the perovskite light-absorbing layer can be effectively passivated.

[0036] In some embodiments, the perovskite light absorbing layer includes an active material having a molecular formula of ABX3 or A2CDX6;

[0037] Optionally, the active material with the molecular formula ABX3 or A2CDX6 has at least one of the following characteristics:

[0038] (1) A includes one or more organic cations and inorganic cations; optionally, A includes monovalent amidine cations, monovalent amine cations and Cs + One or more of;

[0039] (2) B includes one or more organic cations and inorganic cations; optionally, B includes Pb 2+ and Sn2+ One or more of;

[0040] (3) C includes one or more organic cations and inorganic cations; optionally, the C includes Ag + ;

[0041] (4) D includes one or more organic cations and inorganic cations; optionally, D includes Bi 3+ 、Sb 3+ , and In 3+ One or more of;

[0042] (5) X includes one or more of organic anions and inorganic anions; optionally, X includes Br - and I - One or more of .

[0043] In some embodiments, the perovskite light absorbing layer has at least one of the following characteristics:

[0044] (1) The thickness of the perovskite light absorbing layer is 100 nm to 1000 nm;

[0045] (2) The band gap width of the perovskite light absorbing layer is within the range of 1.2eV-2.3eV.

[0046] When the thickness of the perovskite light-absorbing layer is within the above range, it can effectively absorb sunlight and achieve optimal photoelectric conversion efficiency and stability. When the band gap width of the perovskite light-absorbing layer is within the above range, it can have high visible light absorption efficiency.

[0047] In some embodiments, the perovskite solar cell further comprises an electron transport layer, a barrier layer, and an electrode layer located on the light-emitting side of the perovskite light-absorbing layer, wherein the electron transport layer, the barrier layer, and the electrode layer are stacked in sequence, wherein the electron transport layer is closer to the perovskite light-absorbing layer;

[0048] Optionally, the material of the barrier layer includes one or more of 2,9-dimethyl-4,7-biphenyl-1,10-phenanthroline, SnO2, ZnO and cerium-containing oxide;

[0049] Optionally, the barrier layer has a thickness of 0.5 nm to 20 nm.

[0050] The blocking layer can effectively block the transmission of holes and reduce the energy loss caused by charge recombination; using the above-mentioned materials to prepare the blocking layer can make the blocking layer have a lower valence band top, further improving the blocking layer's transmission effect on holes; when the thickness of the blocking layer is within the above-mentioned range, it can effectively block holes without being too thick to affect electron transmission.

[0051] The third aspect of the present application provides a photovoltaic module, comprising the perovskite solar cell of the second aspect of the present application. The perovskite solar cell has high photoelectric conversion efficiency and good stability, which can improve the photoelectric efficiency and stability of the photovoltaic module.

[0052] The fourth aspect of the present application provides a photovoltaic system comprising the photovoltaic module of the third aspect of the present application. The photovoltaic system utilizes perovskite solar cells in the photovoltaic module to directly convert solar radiation energy into electrical energy with high efficiency and good stability.

[0053] The fifth aspect of the present application provides an electrical device, comprising the perovskite solar cell of the second aspect of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0054] To more clearly illustrate the technical solution of this application, the following is a brief introduction to the drawings used in this application. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on the drawings without inventive effort.

[0055] FIG1 is a schematic structural diagram of a perovskite solar cell provided in one embodiment of the present application.

[0056] FIG2 is a schematic structural diagram of a perovskite solar cell provided in one embodiment of the present application.

[0057] FIG3 is a schematic structural diagram of a perovskite solar cell provided in one embodiment of the present application.

[0058] FIG4 is a schematic diagram of an electrical device using a perovskite solar cell as a power source according to an embodiment of the present application. DETAILED DESCRIPTION

[0059] To facilitate understanding of the present application, a more comprehensive description of the present application will be provided below with reference to the accompanying drawings. The accompanying drawings illustrate preferred embodiments of the present application. However, the present application may be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to provide a more thorough and comprehensive understanding of the disclosure of the present application.

[0060] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application pertains. The terms used herein in the specification of this application are for the purpose of describing specific embodiments only and are not intended to limit this application.

[0061] In this application, the technical features described in an open manner include closed technical solutions composed of the listed features, and also include open technical solutions containing the listed features.

[0062] For the sake of clarity, only some numerical ranges are specifically disclosed herein. However, any lower limit may be combined with any upper limit to form an unspecified range; and any lower limit may be combined with other lower limits to form an unspecified range, and similarly, any upper limit may be combined with any other upper limit to form an unspecified range. In addition, each individually disclosed point or single value may itself serve as a lower limit or upper limit and be combined with any other point or single value, or with other lower limits or upper limits, to form an unspecified range.

[0063] " range " disclosed in the present application is limited in the form of lower limit and upper limit, and given range is limited by selecting a lower limit and an upper limit, and the selected lower limit and upper limit define the boundary of special range. The scope limited in this way can be to include end value or not include end value, and can be arbitrarily combined, that is, any lower limit can form a range with any upper limit combination. For example, if the scope of 60-120 and 80-110 is listed for specific parameters, it is understood that the scope of 60-110 and 80-120 is also expected. In addition, if the minimum range value 1 and 2 are listed, and if the maximum range value 3,4 and 5 are listed, then the following range can all be expected: 1-3, 1-4, 1-5, 2-3, 2-4 and 2-5. In this application, unless otherwise specified, the numerical range " ab " represents the abbreviation of any real number combination between a and b, wherein a and b are all real numbers. For example, a numerical range of "0-5" indicates that all real numbers between "0-5" are listed herein, and "0-5" is simply an abbreviation for these numerical combinations. Furthermore, when a parameter is expressed as an integer ≥ 2, this is equivalent to disclosing that the parameter is, for example, an integer of 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, etc.

[0064] In this application, when referring to numerical ranges, unless otherwise specified, the numerical ranges are considered continuous and include the minimum and maximum values ​​of the range, as well as every value between such minimum and maximum values. Further, when a range refers to an integer, every integer between the minimum and maximum values ​​of the range is included. In addition, when multiple ranges are provided to describe a feature or characteristic, the ranges can be combined. In other words, unless otherwise specified, all ranges disclosed herein should be understood to include any and all subranges subsumed therein.

[0065] Unless otherwise specified, all embodiments and optional embodiments of the present application can be combined with each other to form a new technical solution.

[0066] Unless otherwise specified, all technical features and optional technical features of this application can be combined with each other to form a new technical solution.

[0067] Unless otherwise specified, all steps of the present application may be performed sequentially or randomly, preferably sequentially. For example, the method includes steps (a) and (b), indicating that the method may include steps (a) and (b) performed sequentially, or may include steps (b) and (a) performed sequentially. For example, the method may further include step (c), indicating that step (c) may be added to the method in any order, for example, the method may include steps (a), (b) and (c), or may include steps (a), (c) and (b), or may include steps (c), (a) and (b), etc.

[0068] Unless otherwise specified, the terms "include" and "comprising" used in this application may be open-ended or closed-ended. For example, "include" and "comprising" may mean that other components not listed may also be included or that only the listed components are included.

[0069] In the description of this article, it should be noted that, unless otherwise specified, “above” and “below” include the number itself, and “several” in “one or several” means two or more.

[0070] In the description herein, unless otherwise stated, the term "or" is inclusive. That is, the phrase "A or (or) B" means "A, B, or both A and B". More specifically, any of the following conditions satisfies the condition "A or B": A is true (or exists) and B is false (or does not exist); A is false (or does not exist) and B is true (or exists); or both A and B are true (or exist). Unless otherwise stated, the terms used in this application have the well-known meanings commonly understood by those skilled in the art. Unless otherwise stated, the numerical values ​​of the various parameters mentioned in this application can be measured using various measurement methods commonly used in the art (for example, they can be tested according to the methods given in the examples of this application).

[0071] In related technologies, when perovskite solar cells are prepared into thin films, a large number of defects will be generated in the bulk and surface. The existence of these defects affects the photoelectric performance and stability of perovskite solar cells. Passivation defects are a problem that needs to be urgently solved when preparing perovskite solar cells.

[0072] At present, the methods to fill these defects can be mainly divided into Lewis acid, Lewis base, anion, and cationic passivation. The Lewis base passivators reported so far are mostly molecules or ions containing atoms such as nitrogen, sulfur, and oxygen, and the passivation effect is limited.

[0073] Based on the above problems, the first aspect of the present application provides a phosphorus-containing passivator, which includes an ionic compound, the ionic compound includes a cationic group, and the cationic group has a structure shown in the following formula (I):

[0074] ALB

[0075] (I)

[0076] Wherein, A represents an organic phosphorus group with a lone pair of electrons, B represents an organic phosphorus salt group with a positive charge, and L represents a connecting group between the organic phosphorus group and the organic phosphorus salt group.

[0077] It should be noted that the number of organophosphorus groups contained in the cationic group can be one or more, depending on actual needs; the number of organophosphorus salt groups contained in the cationic group can be one or more, depending on actual needs. The organophosphorus salt group can have a single positive charge or multiple positive charges.

[0078] The organic phosphorus group and the organic phosphorus salt group in the cationic group are connected via the L group.

[0079] It can be understood that the phosphorus-containing passivator contains organic phosphorus groups with lone pairs of electrons and organic phosphorus salt groups with positive charges. The lone pairs of electrons of the organic phosphorus groups can form strong P-Pb coordination bonds with the unsaturated coordinated lead ions in the bulk phase and / or the upper and lower interfaces of the perovskite light-absorbing layer, thereby passivating the low-coordinated lead ion defects; the organic phosphorus salt groups can form low-dimensional perovskites at the upper and lower interfaces of the perovskite layer, passivate the interface of the perovskite layer, and inhibit ion migration; therefore, the photoelectric performance and stability of perovskite solar cells can be improved through the synergistic effect of the organic phosphorus groups and the organic phosphorus salt groups.

[0080] In some embodiments, the ionic compound further comprises an anionic group, wherein the anionic group comprises one or more of a halogen anion, a quasi-halogen anion, a tetrafluoroborate ion, a hexafluorophosphate ion, and a dimethylsulfonamide ion. The halogen anion and the halogen-containing anionic group can respectively passivate the iodide ion vacancy and reduce energy loss.

[0081] It should be noted that a halogen anion is an anion formed when a halogen element acquires an electron. A halogen-containing anion group is an anion group formed by a halogen element and other elements.

[0082] The ionic compounds of the present application contain organic phosphorus groups, organic phosphorus salt groups, and halogen anions and / or halogen-containing anion groups, which can coordinately passivate low-coordinated lead ion defects, interface defects, and iodine ion vacancy defects, reduce the energy loss of charge in the perovskite light-absorbing layer and / or at the interface, and improve the photoelectric performance and stability of perovskite solar cells.

[0083] In some embodiments, L includes one or more of a substituted or unsubstituted alkylene group, a substituted or unsubstituted cycloalkylene group, and a substituted or unsubstituted arylene group.

[0084] An alkylene group is a hydrocarbon group derived from an alkyl group by removing a hydrogen atom from the alkyl group to form a hydrocarbon group with two monovalent radical centers. It can be a saturated branched alkyl group or a saturated straight-chain alkyl group. For example, "C1-C9 alkylene" means that the alkyl portion contains 1 to 9 carbon atoms, and each occurrence can be independently C1 alkylene, C4 alkylene, C5 alkylene, C6 alkylene, C7 alkylene, C8 alkylene, or C9 alkylene. Suitable examples include, but are not limited to, methylene (-CH2-), 1,1-ethylene (-CH(CH3)-), 1,2-ethylene (-CH2CH2-), 1,1-propylene (-CH(CH2CH3)-), 1,2-propylene (-CH2CH(CH3)-), 1,3-propylene (-CH2CH2CH2-), and 1,4-butylene (-CH2CH2CH2CH2-).

[0085] A cycloalkylene group refers to a non-aromatic hydrocarbon containing ring carbon atoms derived from a cycloalkyl group by removing a hydrogen atom to form two monovalent radical centers. It can be a monocycloalkylene group, a spirocycloalkylene group, or a bridged cycloalkylene group. Phrases containing this term, such as "C3-C9 cycloalkylene," refer to cycloalkylene groups containing 3 to 9 carbon atoms, each occurrence of which can independently be cyclopropylene, cyclobutylene, cyclopentylene, cyclohexylene, cycloheptylene, octylene, or nonylene. In addition, a cycloalkylene group can contain one or more double bonds. Representative examples of cycloalkylene groups containing double bonds include cyclopentenylene, cyclohexenylene, cyclohexadienylene, and cyclobutadienylene.

[0086] Arylene refers to an aromatic hydrocarbon group derived from an aromatic ring compound by removing two hydrogen atoms. It can be a monocyclic arylene, a condensed ring arylene, or a polycyclic arylene. For polycyclic rings, at least one is an aromatic ring system. For example, "C6~C 20 "Arylene" refers to an arylene group containing 6 to 20 carbon atoms, each occurrence of which can be independently C6 arylene, C 10 Arylene, C 14 Arylene, C 18 Arylene or C 20 Arylene.

[0087] As a possible embodiment, the phosphorus-containing passivating agent has a structure shown in the following formula (II):

[0088] Wherein, R1, R2, R3, R4, and R5 include any one of substituted or unsubstituted alkyl, substituted or unsubstituted cycloalkyl, and substituted or unsubstituted aryl;

[0089] L includes any one of substituted or unsubstituted alkylene, substituted or unsubstituted cycloalkylene, and substituted or unsubstituted arylene;

[0090] X includes any one of a halogen anion and a halogen-containing anion group;

[0091] 1≤n1≤4, 1≤n2≤10, 1≤n3≤4, n1, n2, n3 are integers.

[0092] It should be noted that R1, R2, R3, R4, and R5 each include any one of a substituted or unsubstituted alkyl group, a substituted or unsubstituted cycloalkyl group, and a substituted or unsubstituted aryl group. n1, n2, and n3 are each an integer.

[0093] Alkyl refers to a saturated hydrocarbon containing primary (normal) carbon atoms, secondary carbon atoms, tertiary carbon atoms, quaternary carbon atoms, or combinations thereof. Phrases containing this term, for example, "C1-C9 alkyl" refers to an alkyl group containing 1 to 9 carbon atoms, each occurrence of which can independently be C1 alkyl, C2 alkyl, C3 alkyl, C4 alkyl, C5 alkyl, C6 alkyl, C7 alkyl, C8 alkyl, or C9 alkyl.

[0094] A cycloalkyl group refers to a non-aromatic hydrocarbon group containing ring carbon atoms and may be a monocyclic alkyl group, a spirocyclic alkyl group, or a bridged cycloalkyl group. Phrases containing this term, such as "C3-C9 cycloalkyl," refer to a cycloalkyl group containing 3 to 9 carbon atoms, each occurrence of which may be independently C3 cycloalkyl, C4 cycloalkyl, C5 cycloalkyl, C6 cycloalkyl, C7 cycloalkyl, C8 cycloalkyl, or C9 cycloalkyl. Suitable examples include, but are not limited to, cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, and cycloheptyl. Additionally, a cycloalkyl group may contain one or more double bonds. Representative examples of cycloalkyl groups containing double bonds include cyclopentenyl, cyclohexenyl, cyclohexadienyl, and cyclobutadienyl.

[0095] Aryl refers to an aromatic hydrocarbon group derived from an aromatic ring compound by removing a hydrogen atom. It can be a monocyclic aromatic group, a condensed aromatic group, or a polycyclic aromatic group. For polycyclic aromatic groups, at least one is an aromatic ring system. For example, "C6~C 20 "Aryl" refers to an aromatic group containing 6 to 20 carbon atoms, each occurrence of which can be independently C6 aromatic, C 10 Aryl, C 14 Aryl, C 18 Aryl or C 20Suitable examples include, but are not limited to, benzene, biphenyl, naphthalene, anthracene, phenanthrene, perylene, triphenylene, and derivatives thereof.

[0096] It should be noted that "substituted or unsubstituted" means that the defined group may be substituted or unsubstituted. When the defined group is substituted, it should be understood that it is optionally substituted with a group acceptable in the art, including but not limited to: alkyl, alkoxy, alkenyl, alkynyl, aryl, heteroaryl, heteroalkyl, heterocyclyl, amino, and halogen.

[0097] In some embodiments, R1, R2, R3, R4, and R5 include any one of an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 1 to 10 carbon atoms, a phenyl group, and a substituted phenyl group; the substituents in the substituted phenyl group include one or more of a halogen, an alkyl group, a cycloalkyl group, an alkoxy group, an alkylthio group, an alkylsilyl group, and an alkoxysilyl group.

[0098] It should be noted that R1, R2, R3, R4, and R5 each include any one of an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 1 to 10 carbon atoms, a phenyl group, and a substituted phenyl group.

[0099] In some optional embodiments, the substituents in the substituted phenyl group include one or more of halogen, an alkyl group having 1-10 carbon atoms, a cycloalkyl group having 1-10 carbon atoms, an alkoxy group having 1-10 carbon atoms, an alkylthio group having 1-10 carbon atoms, an alkylsilyl group having 1-10 carbon atoms, and an alkoxysilyl group having 1-10 carbon atoms.

[0100] Alkoxy refers to a group having an -O-alkyl group, i.e., an alkyl group connected to a parent core structure via an oxygen atom. Phrases containing this term, for example, "C1-C9 alkoxy" means that the alkyl portion contains 1 to 9 carbon atoms, and each occurrence can be independently C1 alkoxy, C4 alkoxy, C5 alkoxy, C6 alkoxy, C7 alkoxy, C8 alkoxy or C9 alkoxy. Suitable examples include, but are not limited to, methoxy (-O-CH3 or -OMe), ethoxy (-O-CH2CH3 or -OEt) and tert-butoxy (-OC(CH3)3 or -OtBu).

[0101] Alkylthio refers to an alkyl group in which at least one carbon atom is replaced by a sulfur element, and the alkyl group is connected to the parent core structure via the sulfur atom.

[0102] Alkylsilyl refers to an alkyl group in which at least one carbon atom is replaced by silicon, and the alkyl group is connected to the parent core structure via the silicon atom.

[0103] Alkoxysilyl refers to an alkyl group in which at least one carbon atom is replaced by silicon, and the alkoxy group is connected to the parent core structure via the silicon atom.

[0104] In some embodiments, R1 and R2 include any one of a cycloalkyl group having 1 to 10 carbon atoms and a phenyl group.

[0105] It should be noted that R1 and R2 each include any one of a cycloalkyl group having 1 to 10 carbon atoms and a phenyl group.

[0106] In some optional embodiments, R1 and R2 identically include any one of a cycloalkyl group and a phenyl group having 1 to 10 carbon atoms.

[0107] In some embodiments, R3, R4, and R5 include any one of alkyl groups having 1 to 10 carbon atoms.

[0108] It should be noted that R3, R4, and R5 each include any one of alkyl groups having 1 to 10 carbon atoms.

[0109] In some optional embodiments, R3, R4, and R5 identically include any one of alkyl groups having 1 to 10 carbon atoms.

[0110] As a possible embodiment, L includes any one of an alkylene group having 1 to 10 carbon atoms, a cycloalkylene group having 1 to 10 carbon atoms, a phenylene group, and a substituted phenylene group; the substituents in the substituted phenylene group include one or more of a halogen, an alkyl group, a cycloalkyl group, an alkoxy group, an alkylthio group, an alkylsilyl group, and an alkoxysilyl group.

[0111] In some optional embodiments, the substituents in the substituted phenylene group include one or more of halogen, an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, an alkylthio group having 1 to 10 carbon atoms, an alkylsilyl group having 1 to 10 carbon atoms, and an alkoxysilyl group having 1 to 10 carbon atoms.

[0112] In some embodiments, L comprises any one of an alkylene group having 1 to 10 carbon atoms.

[0113] In some embodiments, X comprises any one of an iodide ion and a boron tetrafluoride ion.

[0114] In some embodiments, the phosphorus-containing passivating agent comprises any one of the following structural formulas M1-M14:

[0115] The second aspect of the present application provides a perovskite solar cell comprising the phosphorus-containing passivator of the first aspect of the present application. By adding the phosphorus-containing passivator during the preparation process, a perovskite solar cell containing the phosphorus-containing passivator is prepared. The phosphorus-containing passivator can coordinately passivate low-coordinated lead ion defects, interface defects, and iodine ion vacancy defects, reducing charge energy loss in the perovskite light-absorbing layer and / or at the interface, thereby improving the photoelectric performance and stability of the perovskite solar cell.

[0116] In some embodiments, the perovskite solar cell includes a perovskite light-absorbing layer, which contains the phosphorus-containing passivator; the phosphorus-containing passivator is directly added when preparing the perovskite light-absorbing layer to passivate the low-coordinated lead ion defects, interface defects and iodine ion vacancy defects in the perovskite light-absorbing layer.

[0117] In some optional embodiments, the mass proportion of the phosphorus-containing passivating agent in the perovskite light absorbing layer is 0.01%-1%. As an example, the mass proportion of the phosphorus-containing passivating agent in the perovskite light absorbing layer can be, but is not limited to, 0.01%, 0.05%, 0.1%, 0.15%, 0.2%, 0.25%, 0.3%, 0.35%, 0.4%, 0.45%, 0.5%, 0.55%, 0.6%, 0.65%, 0.7%, 0.75%, 0.8%, 0.85%, 0.9%, 0.95%, 1%, and ranges between any two of the above values. When the mass proportion of the phosphorus-containing passivating agent in the perovskite light absorbing layer is within the above range, it can effectively passivate low-coordinated lead ion defects, interface defects, and iodide ion vacancy defects in the perovskite light absorbing layer. Optionally, the phosphorus-containing passivator accounts for 0.05%-0.5% by mass in the perovskite light-absorbing layer.

[0118] As an example, the mass proportion of the above-mentioned phosphorus-containing passivator in the perovskite light-absorbing layer can be determined by the following method: obtaining perovskite light-absorbing layer powder and determining the phosphorus content in the light-absorbing layer by elemental analysis.

[0119] In some embodiments, a perovskite solar cell includes a stacked perovskite light-absorbing layer and a passivation layer. The passivation layer is located on the light-entering side or the light-exiting side of the perovskite light-absorbing layer and contains a phosphorus-containing passivating agent. The passivation layer is formed on the upper or lower surface of the perovskite light-absorbing layer to passivate low-coordinated lead ion defects, interface defects, and iodine ion vacancy defects in the perovskite light-absorbing layer.

[0120] It should be noted that the light incident side refers to the side where sunlight enters the perovskite light absorbing layer; the light exiting side refers to the side where sunlight exits the perovskite light absorbing layer.

[0121] In some optional embodiments, the thickness of the passivation layer is 0.1 nm to 10 nm. For example, the thickness of the passivation layer may be, but is not limited to, 0.1 nm, 0.5 nm, 1 nm, 2 nm, 3 nm, 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, or a range between any two of the foregoing values. When the thickness of the passivation layer is within the foregoing range, it can effectively passivate low-coordinated lead ion defects, interface defects, and iodide ion vacancy defects in the perovskite light-absorbing layer. Optionally, the thickness of the passivation layer is 1 nm to 10 nm.

[0122] As an example, the thickness of the passivation layer mentioned above can be measured using instruments such as an ellipsometer and an atomic force microscope.

[0123] In some embodiments, the perovskite light absorbing layer includes an active material having the molecular formula ABX3 or A2CDX6.

[0124] Optionally, A includes one or more of an organic cation and an inorganic cation; further optionally, A includes a monovalent amidinium cation, a monovalent amine cation and a Cs + One or more of .

[0125] Optionally, B includes one or more of organic cations and inorganic cations; further optionally, B includes Pb 2+ and Sn 2+ One or more of .

[0126] Optionally, C includes one or more of organic cations and inorganic cations; further optionally, C includes Ag + .

[0127] Optionally, D includes one or more of organic cations and inorganic cations; further optionally, D includes Bi 3+ 、Sb 3+ , and In 3+ One or more of .

[0128] Optionally, X includes one or more of an organic anion and an inorganic anion; further optionally, X includes Br - and I - One or more of .

[0129] In some embodiments, the thickness of the perovskite light absorbing layer is between 100 nm and 1000 nm. For example, the thickness of the perovskite light absorbing layer may be, but is not limited to, 100 nm, 200 nm, 300 nm, 400 nm, 500 nm, 600 nm, 700 nm, 800 nm, 900 nm, 1000 nm, or a range between any two of the foregoing values. When the thickness of the perovskite light absorbing layer is within the foregoing range, it can effectively absorb sunlight and achieve optimal photoelectric conversion efficiency and stability.

[0130] As an example, the thickness of the perovskite light-absorbing layer mentioned above can be measured using instruments such as an ellipsometer and an atomic force microscope.

[0131] In some embodiments, the band gap width of the perovskite light absorbing layer is between 1.2 electron volts (eV) and 2.3 electron volts (eV). As an example, the band gap width of the perovskite light absorbing layer may be, but is not limited to, 1.2 eV, 1.3 eV, 1.4 eV, 1.5 eV, 1.6 eV, 1.7 eV, 1.8 eV, 1.9 eV, 2 eV, 2.1 eV, 2.2 eV, 2.3 eV, or a range between any two of the foregoing values. When the band gap width of the perovskite light absorbing layer is within the foregoing range, it may have a high visible light absorption efficiency.

[0132] As an example, the band gap width of the perovskite light-absorbing layer mentioned above can be measured by the following method: the absorption spectrum of the perovskite light-absorbing layer is measured by an ultraviolet-visible spectrophotometer, and the emission spectrum of the perovskite light-absorbing layer is measured by a photoluminescence fluorescence spectrometer. The band gap width of the perovskite light-absorbing layer can be calculated by the intersection of the absorption spectrum and the emission spectrum.

[0133] In some embodiments, the perovskite solar cell further comprises a transparent conductive substrate, an electron transport layer, a hole transport layer and an electrode layer; the transparent conductive substrate, the electron transport layer, the perovskite light absorbing layer, the hole transport layer and the electrode layer are stacked in sequence to form a formal device structure, and the perovskite light absorbing layer comprises a phosphorus-containing passivator.

[0134] In some embodiments, the perovskite solar cell further comprises a transparent conductive substrate, an electron transport layer, a hole transport layer and an electrode layer; the transparent conductive substrate, the hole transport layer, the perovskite light absorbing layer, the electron transport layer and the electrode layer are stacked in sequence to form an inverted device structure, and the perovskite light absorbing layer comprises a phosphorus-containing passivator.

[0135] Figure 1 is a schematic diagram of the structure of a perovskite solar cell, wherein 11 represents a transparent conductive substrate, 12 represents an electron transport layer or a hole transport layer, 13 represents a perovskite light absorbing layer, 14 represents a hole transport layer or an electron transport layer, and 15 represents an electrode layer. When 12 represents an electron transport layer and 14 represents a hole transport layer, the transparent conductive substrate, electron transport layer, perovskite light absorbing layer, hole transport layer, and electrode layer are sequentially stacked to form a formal device structure, and the perovskite light absorbing layer contains a phosphorus-containing passivating agent. When 12 represents a hole transport layer and 14 represents an electron transport layer, the transparent conductive substrate, hole transport layer, perovskite light absorbing layer, electron transport layer, and electrode layer are sequentially stacked to form a transverse device structure, and the perovskite light absorbing layer contains a phosphorus-containing passivating agent.

[0136] In some embodiments, the perovskite solar cell further comprises a transparent conductive substrate, an electron transport layer, a hole transport layer and an electrode layer; the transparent conductive substrate, the electron transport layer, the passivation layer, the perovskite light absorbing layer, the hole transport layer and the electrode layer are stacked in sequence to form a formal device structure, and the passivation layer contains a phosphorus-containing passivator.

[0137] In some embodiments, the perovskite solar cell further includes a transparent conductive substrate, an electron transport layer, a hole transport layer and an electrode layer; the transparent conductive substrate, the electron transport layer, the perovskite light absorbing layer, the passivation layer, the hole transport layer and the electrode layer are stacked in sequence to form a formal device structure, and the passivation layer contains a phosphorus-containing passivator.

[0138] Figure 2 shows a schematic diagram of the structure of a perovskite solar cell, wherein 21 represents a transparent conductive substrate, 22 represents an electron transport layer, 23 represents a passivation layer or a perovskite light absorbing layer, 24 represents a perovskite light absorbing layer or a passivation layer, 25 represents a hole transport layer, and 26 represents an electrode layer. When 23 represents a passivation layer and 24 represents a perovskite light absorbing layer, the transparent conductive substrate, electron transport layer, passivation layer, perovskite light absorbing layer, hole transport layer, and electrode layer are stacked in sequence to form the formal device structure, and the passivation layer contains a phosphorus-containing passivating agent. When 23 represents a perovskite light absorbing layer and 24 represents a passivation layer, the transparent conductive substrate, electron transport layer, perovskite light absorbing layer, passivation layer, hole transport layer, and electrode layer are stacked in sequence to form the formal device structure, and the passivation layer contains a phosphorus-containing passivating agent.

[0139] In some embodiments, the perovskite solar cell further comprises an electron transport layer, a barrier layer, and an electrode layer located on the light-emitting side of the perovskite light-absorbing layer. The electron transport layer, barrier layer, and electrode layer are stacked in sequence, with the electron transport layer being closer to the perovskite light-absorbing layer. The barrier layer can effectively block the transport of holes, reducing energy loss due to charge recombination.

[0140] In some optional embodiments, the barrier layer material includes one or more of 2,9-dimethyl-4,7-biphenyl-1,10-phenanthroline (BCP), SnO2, ZnO, and a cerium-containing oxide. Using these materials to prepare the barrier layer can result in a lower valence band top, further enhancing the barrier layer's hole transport function.

[0141] In some optional embodiments, the thickness of the barrier layer is 0.5 nm to 20 nm. As an example, the thickness of the barrier layer may be, but is not limited to, 0.50 nm, 1 nm, 2 nm, 3 nm, 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, 11 nm, 12 nm, 13 nm, 14 nm, 15 nm, 16 nm, 17 nm, 18 nm, 19 nm, 20 nm, or a range between any two of the foregoing values. When the thickness of the barrier layer is within the foregoing range, it can effectively block holes while not being too thick to affect electron transport.

[0142] As an example, the thickness of the barrier layer mentioned above can be measured using instruments such as an ellipsometer and an atomic force microscope.

[0143] In some embodiments, a perovskite solar cell includes a transparent conductive substrate, a hole transport layer, a passivation layer, a perovskite light absorbing layer, an electron transport layer, a blocking layer, and an electrode layer stacked in sequence; the passivation layer contains a phosphorus-containing passivator.

[0144] In some embodiments, a perovskite solar cell includes a transparent conductive substrate, a hole transport layer, a perovskite light absorbing layer, a passivation layer, an electron transport layer, a blocking layer, and an electrode layer stacked in sequence; the passivation layer contains a phosphorus-containing passivator.

[0145] Figure 3 is a schematic diagram of the structure of a perovskite solar cell, wherein 31 represents a transparent conductive substrate, 32 represents a hole transport layer, 33 represents a passivation layer or a perovskite light absorbing layer, 34 represents a perovskite light absorbing layer or a passivation layer, 55 represents an electron transport layer, 36 represents a blocking layer, and 37 represents an electrode layer. When 33 represents a passivation layer and 34 represents a perovskite light absorbing layer, the transparent conductive substrate, hole transport layer, passivation layer, perovskite light absorbing layer, electron transport layer, blocking layer, and electrode layer are stacked in sequence to form a trans-type device structure, and the passivation layer contains a phosphorus-containing passivating agent. When 33 represents a perovskite light absorbing layer and 34 represents a passivation layer, the transparent conductive substrate, hole transport layer, perovskite light absorbing layer, passivation layer, electron transport layer, blocking layer, and electrode layer are stacked in sequence to form a trans-type device structure, and the passivation layer contains a phosphorus-containing passivating agent.

[0146] The transparent conductive substrate is used for light incidence. In some embodiments, the transparent conductive substrate comprises: a substrate and a conductive material layer; the conductive material layer is located on a side of the substrate adjacent to the perovskite light absorbing layer.

[0147] In some embodiments, the conductive material in the conductive material layer includes one or more of fluorine-doped tin dioxide (FTO), indium tin oxide (ITO), aluminum-doped zinc oxide (AZO), boron-doped zinc oxide (BZO), and indium-doped zinc oxide (IZO).

[0148] In some embodiments, the transparent conductive substrate has a thickness of 10 nm to 1000 nm. When the thickness of the transparent conductive substrate is within this range, the conductive ability of the substrate can be increased while ensuring light transmission. By way of example, the thickness of the transparent conductive substrate may include, but is not limited to, 10 nm, 50 nm, 100 nm, 200 nm, 300 nm, 400 nm, 500 nm, 600 nm, 700 nm, 800 nm, 900 nm, 1000 nm, or a range consisting of any two of the foregoing values.

[0149] In the present application, the substrate may be, but is not limited to, a glass substrate or a flexible substrate; the material of the flexible substrate may be, for example (but not limited to), an organic polymer material, and further, may be a mixture of one or more of the following materials in different proportions: including but not limited to polyvinyl alcohol (PVA), polyester (PET), polyimide (PI), polyethylene naphthalate (PEN), polydimethylsiloxane (PDMS), etc.

[0150] The electron transport layer can extract and transport electron carriers and block the passage of free holes. In some embodiments, the materials used in the electron transport layer include TiO2, ZnO, SnO2, [6,6]-phenyl C 61 Methyl butyrate (PC 61 BM), [6,6]-phenyl C 71 Methyl butyrate (PC 71 BM), fullerene C 60 (C 60 ), Fullerene C 70 (C 70 ), naphthalene diimide (NDI) materials, perylene diimide (PDI) materials, and one or more of the derivatives, dopants, passivates and doped passivates of the above substances.

[0151] In some embodiments, the thickness of the electron transport layer is 5 nm to 100 nm. For example, the thickness of the electron transport layer may include, but is not limited to, 5 nm, 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, or a range consisting of any two of the foregoing values. When the thickness of the electron transport layer is within the foregoing range, the electron transport effect is optimized.

[0152] The hole transport layer can extract and transport hole carriers and block the passage of free electrons. In some embodiments, the materials used in the hole transport layer include metal oxides, polymers, small molecules, and one or more of the derivatives, dopants, passivates and doped passivates of the above substances. Optionally, the metal oxide includes one or more of nickel oxide, molybdenum oxide and tungsten oxide. Optionally, the polymer includes one or more of poly(3,4-ethylenedioxythiophene): poly(styrene sulfonate) (PEDOT:PSS), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), and poly[bis(4-phenyl)(4-butylphenyl)amine] (Poly-TPD). Optionally, the small molecule includes one or more of 4-(3,6-dimethylcarbazol-9-yl)butylphosphonic acid (Me-4PACZ), 2-(3,6-dimethoxycarbazol-9-yl)ethylphosphonic acid (MeO-2PACZ), and 4-(carbazol-9-yl)butylphosphonic acid (4PACZ).

[0153] In some embodiments, the thickness of the hole transport layer is 0.1 nm to 100 nm. For example, the thickness of the hole transport layer may include, but is not limited to, 0.1 nm, 1 nm, 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, or a range consisting of any two of the foregoing values. When the thickness of the hole transport layer is within the foregoing range, the hole transport effect is optimized.

[0154] In some embodiments, the material of the electrode layer includes one or more of an organic conductive material and an inorganic conductive material; optionally, the material used for the electrode layer includes one or more of silver, copper, carbon, gold, aluminum, indium tin oxide, aluminum-doped zinc oxide, boron-doped zinc oxide, and indium-doped zinc oxide.

[0155] In some possible embodiments, the thickness of the electrode layer is 10 nm to 1000 nm. When the thickness of the electrode layer is within this range, the charge collection effect can be optimized. As an example, the thickness of the electrode layer may include, but is not limited to, 10 nm, 50 nm, 100 nm, 200 nm, 300 nm, 400 nm, 500 nm, 600 nm, 700 nm, 800 nm, 900 nm, 1000 nm, or a range consisting of any two of the above values.

[0156] When a perovskite cell is operating, after the perovskite light-absorbing layer is exposed to light, the internal electrons gain energy and break free from the constraints of the perovskite light-absorbing layer to form negatively charged electron carriers, while also forming positively charged hole carriers, thereby generating electron-hole pairs. The free electrons and free holes are transmitted in opposite directions through the corresponding transport layers, causing the electrons and holes to flow, forming an external current and realizing the conversion of light energy into electrical energy. Furthermore, after the perovskite light-absorbing layer absorbs photons, it is stimulated to generate electron-hole pairs, which further dissociate to form free carriers with opposite charges. The free electrons are transmitted to the positive electrode through the electron transport layer, and the free holes are transmitted to the negative electrode through the hole transport layer. The two free carriers are collected by the corresponding electrodes, further forming a photocurrent in the perovskite cell circuit.

[0157] It can be understood that one of the transparent conductive substrate and the electrode layer serves as a positive electrode to collect electron carriers transported via the electron transport layer, and the other serves as a negative electrode to collect hole carriers transported via the hole transport layer.

[0158] In some embodiments, a method for preparing a perovskite solar cell includes the following steps: forming an electron transport layer on the side of a transparent conductive substrate having a conductive material layer; forming a perovskite light absorbing layer on the side of the electron transport layer away from the transparent conductive substrate, wherein the perovskite light absorbing layer contains a phosphorus-containing passivating agent; forming a hole transport layer on the side of the perovskite light absorbing layer away from the electron transport layer; and forming an electrode layer on the side of the hole transport layer away from the perovskite light absorbing layer. This method is used to produce a formal device structure.

[0159] In some embodiments, a method for preparing a perovskite solar cell includes the following steps: forming a hole transport layer on the side of a transparent conductive substrate having a conductive material layer; forming a perovskite light absorbing layer on the side of the hole transport layer away from the transparent conductive substrate, wherein the perovskite light absorbing layer contains a phosphorus-containing passivating agent; forming an electron transport layer on the side of the perovskite light absorbing layer away from the hole transport layer; and forming an electrode layer on the side of the electron transport layer away from the perovskite light absorbing layer. This method can produce an inverted device structure.

[0160] In some embodiments, a method for preparing a perovskite solar cell includes the following steps: forming an electron transport layer on the side of a transparent conductive substrate having a conductive material layer; forming a passivation layer on the side of the electron transport layer away from the transparent conductive substrate, the passivation layer containing a phosphorus-containing passivating agent; forming a perovskite light absorption layer on the side of the passivation layer away from the electron transport layer; forming a hole transport layer on the side of the perovskite light absorption layer away from the passivation layer; and forming an electrode layer on the side of the hole transport layer away from the perovskite light absorption layer. This method is used to produce a formal device structure.

[0161] In some embodiments, a method for preparing a perovskite solar cell includes the following steps: forming an electron transport layer on a side of a transparent conductive substrate having a conductive material layer; forming a perovskite light absorption layer on a side of the electron transport layer away from the transparent conductive substrate; forming a passivation layer on a side of the perovskite light absorption layer away from the electron transport layer, the passivation layer containing a phosphorus-containing passivating agent; forming a hole transport layer on a side of the passivation layer away from the perovskite light absorption layer; and forming an electrode layer on a side of the hole transport layer away from the passivation layer. This method is used to produce a formal device structure.

[0162] In some embodiments, a method for preparing a perovskite solar cell includes the following steps: forming a hole transport layer on the side of a transparent conductive substrate having a conductive material layer; forming a passivation layer on the side of the hole transport layer away from the transparent conductive substrate, the passivation layer containing a phosphorus-containing passivating agent; forming a perovskite light absorbing layer on the side of the passivation layer away from the hole transport layer; forming an electron transport layer on the side of the perovskite light absorbing layer away from the passivation layer; forming a blocking layer on the side of the electron transport layer away from the perovskite light absorbing layer; and forming an electrode layer on the side of the blocking layer away from the electron transport layer. This method can be used to produce an inverted device structure.

[0163] In some embodiments, a method for preparing a perovskite solar cell includes the following steps: forming a hole transport layer on the side of a transparent conductive substrate having a conductive material layer; forming a perovskite light absorbing layer on the side of the hole transport layer away from the transparent conductive substrate; forming a passivation layer on the side of the perovskite light absorbing layer away from the hole transport layer, the passivation layer containing a phosphorus-containing passivating agent; forming an electron transport layer on the side of the passivation layer away from the perovskite light absorbing layer; forming a blocking layer on the side of the electron transport layer away from the perovskite light absorbing layer; and forming an electrode layer on the side of the blocking layer away from the electron transport layer. This method can produce an inverted device structure.

[0164] In some embodiments, the passivation layer may be prepared by one of spin coating, spray coating, doctor blade coating, slot coating, and roll-to-roll printing.

[0165] In some embodiments, preparing the passivation layer includes the step of preparing a passivation layer slurry, and the solvent used in preparing the passivation layer slurry includes one or more of water, methanol, ethanol, isopropanol, N,N-dimethylformamide, dimethyl sulfoxide, chloroform, chlorobenzene and toluene, and the concentration of the phosphorus-containing passivating agent in the passivation layer slurry is 0.001 mg / mL-10 mg / mL; for example, the concentration of the phosphorus-containing passivating agent in the passivation layer slurry can be but is not limited to 0.001 mg / mL, 0.01 mg / mL, 0.1 mg / mL, 1 mg / mL, 2 mg / mL, 3 mg / mL, 4 mg / mL, 5 mg / mL, 6 mg / mL, 7 mg / mL, 8 mg / mL, 9 mg / mL, 10 mg / mL or a range between any two of the above values.

[0166] It is understandable that the structure of the perovskite cell involved in this application may not be limited to the structural layers listed above. Other functional layers, such as buffer layers, may also be introduced as needed. In some embodiments, the perovskite cell may be provided with a buffer layer with a suitable energy level, which may play one or more roles in reducing energy level barriers, promoting energy level matching, improving carrier extraction efficiency, passivating interface defect states, protecting the light absorption layer, inhibiting water molecules and oxygen from oxidative decomposition of the cell, improving photoelectric conversion efficiency, and improving the stability of the perovskite cell. Depending on the location of the buffer layer, the types of buffer layers may include four types: a buffer layer between the hole transport layer and the anode, a buffer layer between the electron transport layer and the cathode, a buffer layer between the hole transport layer and the absorption layer, and a buffer layer between the electron transport layer and the absorption layer. Materials that can be used for the buffer layer in the perovskite cell may include, but are not limited to: Cu2O, NiO, AZO, TiO2, etc.

[0167] A third aspect of the present application provides a photovoltaic assembly, comprising the perovskite solar cell of the second aspect of the present application.

[0168] The above-mentioned perovskite solar cells have high photoelectric conversion efficiency and good stability, which can improve the photoelectric efficiency and stability of photovoltaic modules.

[0169] The above includes one or more perovskite solar cells, which can be selected according to the specific application scenario; further, the above photovoltaic module includes multiple perovskite solar cells, and the multiple perovskite solar cells are connected in series or in parallel to form a battery cell.

[0170] In some embodiments, the photovoltaic module further includes a photovoltaic glass layer, a bonding layer, and a back sheet.

[0171] Adhesive layers are provided on both surfaces of the cell, a back plate is provided on the surface of one of the adhesive layers away from the cell, and a photovoltaic glass layer is provided on the surface of the other adhesive layer away from the cell.

[0172] The photovoltaic glass layer and back panel are used to protect the perovskite solar cells, and have the functions of sealing, insulation and waterproofing; the bonding layer plays the role of bonding the photovoltaic glass layer and the battery cell, and bonding the back panel and the battery cell.

[0173] Optionally, the photovoltaic glass layer is made of tempered glass, the back panel is made of TPT (polyvinyl fluoride) or TPE (thermoplastic elastomer), and the adhesive layer is made of EVA (polyethylene-polyvinyl acetate copolymer).

[0174] Furthermore, the photovoltaic module further includes a junction box and an outer frame.

[0175] The junction box is used to protect the power generation system of the entire photovoltaic module. It is equivalent to a current transfer station. When a battery cell short-circuits, the junction box will automatically disconnect the short-circuited battery string.

[0176] The outer frame can support and protect the entire photovoltaic module. The frame can be made of aluminum alloy, which has excellent strength and corrosion resistance.

[0177] Furthermore, silicone is used to bond and seal the connection between the frame and other parts of the photovoltaic module. Photovoltaic modules can convert solar energy into electrical energy, which can be stored in batteries or used to drive loads.

[0178] In some embodiments, the photovoltaic component is a solar panel.

[0179] A fourth aspect of the present application provides a photovoltaic system, comprising the photovoltaic assembly of the third aspect of the present application.

[0180] The photovoltaic system utilizes the perovskite solar cells in the above-mentioned photovoltaic modules to directly convert solar radiation energy into electrical energy with high efficiency and good stability; further, the above-mentioned photovoltaic system is a photovoltaic power generation system.

[0181] Photovoltaic modules are the core part of photovoltaic power generation systems. The above photovoltaic system includes one or more photovoltaic modules, which can be selected according to the specific application scenario; further, when the above photovoltaic system includes multiple photovoltaic modules, the multiple photovoltaic modules form a photovoltaic array.

[0182] The above photovoltaic system can be an independent photovoltaic power generation system or a grid-connected photovoltaic power generation system.

[0183] An independent photovoltaic power generation system consists of a photovoltaic array, a battery pack, a charge controller, a power electronic converter (inverter), and a load. Its operating principle is that solar radiation energy is first converted into electrical energy by the photovoltaic array, then converted by the power electronic converter to power the load. Meanwhile, excess electrical energy is stored as chemical energy in an energy storage device after passing through the charge controller. In this way, when sunlight is insufficient, the energy stored in the battery can be converted into 220V, 50Hz AC electricity after passing through the power electronic inverter, filtering, and power frequency transformer to supply the AC load.

[0184] A grid-connected photovoltaic power generation system consists of a photovoltaic array, a high-frequency DC / DC boost circuit, a power electronic converter (inverter), and system monitoring. Its operating principle is that solar radiation energy is converted by the photovoltaic array, then converted to high-voltage DC through high-frequency DC conversion. This is then inverted by a power electronic inverter and output to the grid as a sinusoidal AC current with a frequency consistent with the grid voltage.

[0185] The above two photovoltaic power generation systems have their own characteristics and can be selected according to specific application scenarios.

[0186] In a fifth aspect, the present application provides an electrical device, comprising the perovskite solar cell according to the second aspect of the present application.

[0187] In some embodiments, the perovskite solar cell can be used as a power generation device for an electrical device. The type of power generation device can include, but is not limited to, an integrated power generation device. The location of the power generation device can include, but is not limited to, the roof or back panel of a vehicle.

[0188] Furthermore, the above-mentioned electrical devices may include mobile devices, such as mobile phones, laptop computers, electric vehicles, electric trains, ships and satellites, power generation systems, etc., but are not limited thereto.

[0189] Figure 4 shows an example of an electric device, which is a car, and can further be a pure electric vehicle, a hybrid electric vehicle, or a plug-in hybrid electric vehicle.

[0190] As another example, the electric device may be a mobile phone, a tablet computer, a laptop computer, a calculator, etc.

[0191] As another example, the power-consuming device may be a wearable device, such as a watch.

[0192] The beneficial effects of the present application are further illustrated below with reference to the examples.

[0193] In order to make the technical problems, technical solutions and beneficial effects solved by the present application clearer, the following will be further described in detail with reference to the embodiments and drawings. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. The following description of at least one exemplary embodiment is actually only illustrative and is in no way intended to limit the present application and its applications. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present application. The materials used in the embodiments and comparative examples of the present application can all be obtained commercially.

[0194] If no specific techniques or conditions are specified in the examples, the experiments were carried out according to the techniques or conditions described in the literature in the field or according to the product instructions. All reagents or instruments used without specifying the manufacturer are commercially available conventional products.

[0195] 1. Preparation of phosphorus-containing passivating agent

[0196] 1. Preparation of phosphorus-containing passivator M1

[0197] Process 1: Add 1.86g of compound 1 and 10mL of tetrahydrofuran to three-necked flask 1. After compound 1 is dissolved, the temperature is lowered to -78°C, and 4mL of 2.5M n-butyl lithium (n-BuLi) in n-hexane solution is added dropwise to three-necked flask 1 and stirred for 2h. Add 2.81g of compound 2 and 10mL of tetrahydrofuran to three-necked flask 2. After compound 2 is dissolved, the solution in three-necked flask 1 is added dropwise to three-necked flask 2 and stirred for 12h. After the reaction is completed, 2.79g of compound 3 is obtained by chromatography on a silica gel column with a yield of 80%. 1 H NMR (400 MHz, CD2Cl2) δ 7.42 (d, J = 7.2 Hz, 6H), 7.15 (d, J = 7.2 Hz, 4H), 3.03-2.98 (m, 2H), 2.01-1.96 (m, 2H). The reaction process is as follows:

[0198] Process 2: 340 mg of compound 3, 76 mg of trimethylphosphine (P(CH3)3), and 10 mL of o-dichlorobenzene (o-DCB) were added to a three-necked flask 3 and heated at 160°C for 12 h. After the reaction, the precipitate was dissolved in 10 mL of water, and the aqueous phase was washed three times with 10 mL × 3 dichloromethane. Finally, the water was removed by vacuum distillation to obtain 408 mg of phosphorus-containing passivator M1 with a yield of 98%. 1 H NMR (400 MHz, D2O) δ 7.42 (d, J = 7.2 Hz, 6H), 7.15 (d, J = 7.2 Hz, 4H), 2.54-2.50 (m, 2H), 1.50-1.46 (m, 2H), 0.89 (s, 9H). The reaction process is as follows:

[0199] 2. Preparation of phosphorus-containing passivator M2

[0200] The difference between the preparation of phosphorus-containing passivator M2 and phosphorus-containing passivator M1 is that 76 mg of trimethylphosphine (P(CH3)3) is replaced by 202 mg of tributylphosphine (PBu3) in process 2, and 526 mg of phosphorus-containing passivator M2 is finally obtained after reaction and post-treatment steps, with a yield of 97%. 1 H NMR (400 MHz, D2O) δ 7.42 (d, J = 7.2 Hz, 6H), 7.15 (d, J = 7.2 Hz, 4H), 2.54-2.48 (m, 8H), 1.50-1.38 (m, 14H), 0.90 (s, 9H). The reaction process is as follows:

[0201] 3. Preparation of phosphorus-containing passivator M3

[0202] The difference between the preparation of phosphorus-containing passivator M3 and phosphorus-containing passivator M1 is:

[0203] (1) In process 1, 2.81 g of compound 2 was replaced with 2.96 g of compound 4. After the reaction, 2.83 g of compound 5 was obtained with a yield of 80%. 1 H NMR (400 MHz, CD2Cl2) δ 7.42 (d, J = 7.2 Hz, 6H), 7.15 (d, J = 7.2 Hz, 4H), 2.94-2.88 (m, 2H), 1.91-1.86 (m, 2H), 1.45-1.39 (m, 2H). The reaction process is as follows:

[0204] (2) In process 2, 340 mg of compound 3 was replaced with 354 mg of compound 5, and 76 mg of trimethylphosphine (P(CH3)3) was replaced with 202 mg of tributylphosphine. After reaction and post-treatment steps, 536 mg of phosphorus-containing passivating agent M3 was finally obtained with a yield of 99%. 1 H NMR (400 MHz, D2O) δ 7.42 (d, J = 7.2 Hz, 6H), 7.15 (d, J = 7.2 Hz, 4H), 2.54-2.50 (m, 8H), 1.50-1.36 (m, 16H), 0.89 (s, 9H). The reaction process is as follows:

[0205] 4. Preparation of phosphorus-containing passivator M4

[0206] The difference between the preparation of phosphorus-containing passivator M4 and phosphorus-containing passivator M1 is:

[0207] (1) In process 1, 2.81 g of compound 2 was replaced with 2.67 g of compound 6. After the reaction, 2.36 g of compound 7 was obtained with a yield of 72%. 1 H NMR (400 MHz, CD2Cl2) δ 7.42 (d, J = 7.2 Hz, 6H), 7.15 (d, J = 7.2 Hz, 4H), 2.96 (d, J = 7.2 Hz, 2H). The reaction process is as follows:

[0208] (2) In process 2, 340 mg of compound 3 was replaced with 326 mg of compound 7, and 76 mg of trimethylphosphine (P(CH3)3) was replaced with 202 mg of tributylphosphine. After reaction and post-treatment steps, 524 mg of phosphorus-containing passivating agent M4 was finally obtained with a yield of 99%. 1H NMR (400 MHz, D2O) δ 7.42 (d, J = 7.2 Hz, 6H), 7.15 (d, J = 7.2 Hz, 4H), 2.55-2.51 (m, 8H), 1.51-1.34 (m, 12H), 0.91 (s, 9H). The reaction process is as follows:

[0209] 5. Preparation of phosphorus-containing passivator M5

[0210] The difference between the preparation of phosphorus-containing passivator M5 and phosphorus-containing passivator M1 is:

[0211] (1) In process 1, 1.86 g of compound 1 was replaced with 1.98 g of compound 8. After the reaction, 2.82 g of compound 9 was obtained with a yield of 79%. 1 H NMR (400 MHz, CD2Cl2) δ 3.03-2.98 (m, 2H), 2.07-1.95 (m, 2H), 1.62-1.29 (m, 22H). The reaction process is as follows:

[0212] (2) In process 2, 340 mg of compound 3 was replaced with 352 mg of compound 9. After reaction and post-treatment steps, 423 mg of phosphorus-containing passivating agent M5 was finally obtained with a yield of 99%. 1 H NMR (400 MHz, D2O) δ 2.58-2.48 (m, 2H), 1.62-1.29 (m, 24H), 0.90 (s, 9H). The reaction process is as follows:

[0213] 6. Preparation of phosphorus-containing passivator M6

[0214] The difference between the preparation of phosphorus-containing passivator M6 and phosphorus-containing passivator M5 is:

[0215] In process 2, 76 mg of trimethylphosphine was replaced with 202 mg of tributylphosphine. After reaction and post-treatment, 423 mg of phosphorus-containing passivating agent M6 was finally obtained with a yield of 99%. 1 H NMR (400 MHz, D2O) δ 2.58-2.48 (m, 8H), 1.62-1.29 (m, 30H), 0.89 (s, 9H). The reaction process is as follows:

[0216] 7. Preparation of phosphorus-containing passivator M7

[0217] The difference between the preparation of phosphorus-containing passivator M7 and phosphorus-containing passivator M5 is:

[0218] (1) In process 1, 2.81 g of compound 2 was replaced with 2.96 g of compound 4. After the reaction, 2.82 g of compound 10 was obtained with a yield of 79%. 1 H NMR (400 MHz, CD2Cl2) δ 3.03-2.98 (m, 2H), 2.07-1.95 (m, 2H), 1.62-1.29 (m, 26H). The reaction process is as follows:

[0219] (2) In process 2, 352 mg of compound 9 was replaced with 366 mg of compound 10. After reaction and post-treatment steps, 551 mg of phosphorus-containing passivating agent M7 was finally obtained with a yield of 99%. 1 H NMR (400 MHz, D2O) δ 2.58-2.48 (m, 2H), 1.64-1.27 (m, 32H), 0.90 (s, 9H). The reaction process is as follows:

[0220] 8. Preparation of phosphorus-containing passivator M8

[0221] The difference between the preparation of phosphorus-containing passivator M8 and phosphorus-containing passivator M5 is:

[0222] (1) In process 1, 2.81 g of compound 2 was replaced with 2.67 g of compound 6. After the reaction, 2.88 g of compound 11 was obtained with a yield of 78%. 1 H NMR (400 MHz, CD2Cl2) δ 3.09-2.98 (m, 2H), 1.62-1.29 (m, 22H). The reaction process is as follows:

[0223] (2) In process 2, 352 mg of compound 9 was replaced with 352 mg of compound 11. After reaction and post-treatment steps, 423 mg of phosphorus-containing passivating agent M8 was finally obtained with a yield of 99%. 1 H NMR (400 MHz, D2O) δ 2.58-2.48 (m, 6H), 1.62-1.29 (m, 28H), 0.90 (s, 9H). The reaction process is as follows:

[0224] 9. Preparation of phosphorus-containing passivator M9

[0225] The difference between the preparation of phosphorus-containing passivator M9 and phosphorus-containing passivator M1 is:

[0226] (1) In process 1, 2.81 g of compound 2 was replaced with 2.88 g of compound 12. After the reaction, 1.25 g of compound 13 was obtained with a yield of 37%. 1H NMR (400 MHz, CD2Cl2) δ 7.42 (d, J = 7.2 Hz, 12H), 7.15 (d, J = 7.2 Hz, 8H), 2.79 (s, 4H), 1.30 (d, J = 7.2 Hz, 4H). The reaction process is as follows:

[0227] (2) In process 2, 340 mg of compound 3 was replaced with 346 mg of compound 13, and 76 mg of trimethylphosphine (P(CH3)3) was replaced with 202 mg of tributylphosphine. After reaction and post-treatment steps, 541 mg of phosphorus-containing passivating agent M9 was finally obtained with a yield of 99%. 1 H NMR (400 MHz, D2O) δ 7.42 (d, J = 7.2 Hz, 12H), 7.15 (d, J = 7.2 Hz, 8H), 2.55-2.51 (m, 16H), 1.51-1.34 (m, 24H), 0.91 (s, 18H). The reaction process is as follows:

[0228] 10. Preparation of phosphorus-containing passivator M10

[0229] The difference between the preparation of phosphorus-containing passivator M10 and phosphorus-containing passivator M1 is:

[0230] (1) In process 1, 2.81 g of compound 2 was replaced with 3.16 g of compound 14. After the reaction, 1.27 g of compound 15 was obtained with a yield of 34%. 1 H NMR (400 MHz, CD2Cl2) δ 7.42 (d, J = 7.2 Hz, 12H), 7.15 (d, J = 7.2 Hz, 8H), 2.95-2.87 (m, 4H), 1.47-1.38 (m, 4H), 1.24-1.17 (m, 4H). The reaction process is as follows:

[0231] (2) In process 2, 340 mg of compound 3 was replaced with 374 mg of compound 15, and 76 mg of trimethylphosphine (P(CH3)3) was replaced with 202 mg of tributylphosphine. After reaction and post-treatment steps, 446 mg of phosphorus-containing passivating agent M10 was finally obtained with a yield of 99%. 1 H NMR (400 MHz, D2O) δ 7.42 (d, J = 7.2 Hz, 12H), 7.15 (d, J = 7.2 Hz, 8H), 2.50-2.42 (m, 16H), 1.41-1.14 (m, 40H), 0.90 (s, 18H). The reaction process is as follows:

[0232] 11. Preparation of phosphorus-containing passivator M11

[0233] 100 mg of phosphorus-containing passivator M10 was passed through ion exchange resin to obtain 98 mg of phosphorus-containing passivator M11 with a yield of 98%. 1 H NMR (400 MHz, D2O) δ 7.42 (d, J = 7.2 Hz, 12H), 7.15 (d, J = 7.2 Hz, 8H), 2.50-2.42 (m, 16H), 1.41-1.14 (m, 40H), 0.90 (s, 18H). The reaction process is as follows:

[0234] 12. Phosphorus-containing passivator M12

[0235] The difference between the preparation of phosphorus-containing passivator M12 and phosphorus-containing passivator M10 is:

[0236] (1) In process 1, 3.16 g of compound 14 was replaced with 6.31 g. After the reaction, 1.27 g of compound 16 was obtained with a yield of 34%. 1 H NMR (400 MHz, CD2Cl2) δ 7.42 (d, J = 7.2 Hz, 6H), 7.15 (d, J = 7.2 Hz, 4H), 2.95-2.87 (m, 6H), 1.47-1.38 (m, 2H), 1.24-1.17 (m, 8H). The reaction process is as follows:

[0237] (2) In process 2, 374 mg of compound 15 was replaced with 229 mg of compound 16. After reaction and post-treatment steps, 415 mg of phosphorus-containing passivating agent M12 was finally obtained with a yield of 99%. 1 H NMR (400 MHz, D2O) δ 7.42 (d, J = 7.2 Hz, 6H), 7.15 (d, J = 7.2 Hz, 4H), 2.50-2.42 (m, 6H), 1.41-1.14 (m, 64H), 0.90 (s, 27H). The reaction process is as follows:

[0238] 13. Phosphorus-containing passivator M13

[0239] The difference between the preparation of phosphorus-containing passivator M13 and phosphorus-containing passivator M10 is:

[0240] (1) In process 1, 3.16 g of compound 14 was replaced with 2.11 g. After the reaction, 1.51 g of compound 17 was obtained with a yield of 56%. 1H NMR (400 MHz, CD2Cl2) δ 7.42 (d, J = 7.2 Hz, 18H), 7.15 (d, J = 7.2 Hz, 12H), 2.95-2.87 (m, 2H), 1.47-1.38 (m, 6H), 1.24-1.17 (m, 8H). The reaction process is as follows:

[0241] (2) In process 2, 374 mg of compound 15 was replaced with 806 mg of compound 17. After reaction and post-treatment, 998 mg of phosphorus-containing passivating agent M13 was finally obtained with a yield of 98%. 1 H NMR (400 MHz, D2O) δ 7.42 (d, J = 7.2 Hz, 18H), 7.15 (d, J = 7.2 Hz, 12H), 2.50-2.42 (m, 14H), 1.41-1.14 (m, 32H), 0.90 (s, 9H). The reaction process is as follows:

[0242] 14. Phosphorus-containing passivator M14

[0243] 100 mg of phosphorus-containing passivator M13 was passed through ion exchange resin to obtain 98 mg of phosphorus-containing passivator M14 with a yield of 98%. 1 H NMR (400 MHz, D2O) δ 7.42 (d, J = 7.2 Hz, 12H), 7.15 (d, J = 7.2 Hz, 8H), 2.50-2.42 (m, 16H), 1.41-1.14 (m, 40H), 0.90 (s, 18H). The reaction process is as follows:

[0244] 15. Phosphorus-containing passivator M15

[0245] The difference between the preparation of phosphorus-containing passivator M15 and phosphorus-containing passivator M1 is:

[0246] (1) In process 1, 2.81 g of compound 2 was replaced with 3.36 g of compound 18. After the reaction, 1.26 g of compound 19 was obtained with a yield of 32%. 1 H NMR (400 MHz, CD2Cl2) δ 7.44-7.40 (m, 6H), 7.17-7.13 (m, 4H), 4.02-3.98 (m, 2H), 2.11-2.07 (m, 4H), 1.67-1.32 (m, 5H). The reaction process is as follows:

[0247] (2) In process 2, 340 mg of compound 3 was replaced by 394 mg of compound 19, and 76 mg of trimethylphosphine (P(CH3)3) was replaced by 202 mg of tributylphosphine. After reaction and post-treatment steps, 587 mg of phosphorus-containing passivating agent M15 was finally obtained with a yield of 98%. 1 H NMR (400 MHz, D2O) δ 7.44-7.40 (m, 6H), 7.17-7.13 (m, 4H), 2.48-2.44 (m, 6H), 1.63-1.56 (m, 4H), 1.45-1.41 (m, 2H), 1.32-1.26 (m, 16H), 0.91-0.87 (m, 9H). The reaction process is as follows:

[0248] 16. Phosphorus-containing passivator M16

[0249] The difference between the preparation of phosphorus-containing passivator M16 and phosphorus-containing passivator M1 is:

[0250] There is no need to carry out the reaction process of process 1. In process 2, 340 mg of compound 3 is replaced by 394 mg of compound 20, and 76 mg of trimethylphosphine (P(CH3)3) is replaced by 202 mg of tributylphosphine. After reaction and post-treatment steps, 601 mg of phosphorus-containing passivating agent M16 is finally obtained with a yield of 99%. 1 H NMR (400 MHz, D2O) δ 7.47-7.42 (m, 6H), 7.19-7.13 (m, 8H), 2.64 (s, 2H), 1.42-1.36 (m, 18H), 0.93-0.89 (m, 9H). The reaction process is as follows:

[0251] 17. Phosphorus-containing passivator M17

[0252] The difference between the preparation of phosphorus-containing passivator M17 and phosphorus-containing passivator M1 is:

[0253] There is no need to carry out the reaction process of process 1. In process 2, 340 mg of compound 3 is replaced by 462 mg of compound 21, and 76 mg of trimethylphosphine (P(CH3)3) is replaced by 202 mg of tributylphosphine. After reaction and post-treatment steps, 632 mg of phosphorus-containing passivator M17 is finally obtained with a yield of 95%. 1 H NMR (400 MHz, D2O) δ 7.19-7.13 (m, 8H), 7.00-6.96 (m, 4H), 3.81 (s, 6H), 2.64 (s, 2H), 1.42-1.36 (m, 18H), 0.93-0.89 (m, 9H). The reaction process is as follows:

[0254] 18. Phosphorus-containing passivator M18

[0255] The difference between the preparation of phosphorus-containing passivator M18 and phosphorus-containing passivator M1 is:

[0256] (1) In process 1, 2.81 g of compound 2 was replaced with 3.33 g of compound 22. After the reaction, 1.57 g of compound 23 was obtained with a yield of 41%. 1 H NMR (400 MHz, CD2Cl2) δ 7.44-7.40 (m, 6H), 7.17-7.13 (m, 4H), 3.96-3.92 (m, 4H), 3.13-3.08 (m, 2H), 1.63-1.60 (m, 2H). The reaction process is as follows:

[0257] (2) In process 2, 340 mg of compound 3 was replaced with 384 mg of compound 23, and 76 mg of trimethylphosphine (P(CH3)3) was replaced with 202 mg of tributylphosphine. After reaction and post-treatment steps, 582 mg of phosphorus-containing passivating agent M18 was finally obtained with a yield of 99%. 1 H NMR (400 MHz, D2O) δ 7.44-7.40 (m, 6H), 7.17-7.13 (m, 4H), 3.43-3.39 (m, 4H), 1.63-1.56 (m, 4H), 1.45-1.36 (m, 18H), 0.91-0.87 (m, 9H). The reaction process is as follows:

[0258] 2. Preparation of perovskite solar cells

[0259] Example 1

[0260] (1) 20 pieces of FTO conductive glass with a specification of 2.0*2.0 cm were taken, and 0.35 cm of FTO was removed from both ends by laser etching to expose the glass substrate. The etched FTO conductive glass was ultrasonically cleaned several times with water, acetone, and isopropyl alcohol in sequence. The FTO conductive glass was blown dry with a nitrogen gun and further cleaned in an ultraviolet ozone machine; wherein, FTO conductive glass refers to glass obtained by forming a conductive material layer on one surface of a glass substrate using fluorine-doped tin dioxide as a conductive material;

[0261] (2) 10 mg / mL nickel oxide nanoparticles (aqueous solution as solvent) were spin-coated on the UV-ozone treated FTO substrate at a rate of 4000 rpm and annealed on a hot plate at 100 °C for 30 min to prepare a hole transport layer with a thickness of 35 nm;

[0262] (3) Weighing lead iodide, iodomethane, cesium iodide and lead bromide in a molar ratio of 97:3:95:5, and a phosphorus-containing passivator M1 accounting for 1 wt% of the above four substances, dissolving the solid powders in a mixed solution of DMF and DMSO in a volume ratio of 100:1, stirring for 3 hours, filtering with a 0.22 μm organic filter membrane to obtain a perovskite precursor solution, spin-coating the perovskite precursor solution on the hole transport layer at 3000 rpm, annealing at 100 ° C for 30 minutes, and cooling to room temperature to obtain a perovskite light-absorbing layer with a thickness of 500 nm;

[0263] (4) Spin-coat PC on the perovskite light-absorbing layer at 1500 rpm 61 A chlorobenzene solution of BM was annealed at 100°C for 10 min to prepare an electron transport layer with a thickness of about 30 nm. Then, an isopropanol solution of BCP was spin-coated at 5000 rpm to prepare a blocking layer with a thickness of 5 nm.

[0264] (5) The obtained wafer is placed in a vapor deposition machine to vapor deposit a metal electrode Cu to prepare an electrode layer with a thickness of about 100 nm.

[0265] Examples 2-18 and 21-24

[0266] The preparation methods of the perovskite solar cells in Examples 2-18 and 21-24 are basically similar to the preparation method of the perovskite solar cell in Example 1, and the main differences are: at least one of the type and / or amount of the phosphorus-containing passivator, the material type of the barrier layer, the thickness of the barrier layer, the material type of the perovskite light-absorbing layer, the thickness of the perovskite light-absorbing layer, the type and / or thickness of the transparent conductive substrate, the type and / or thickness of the electron transport layer, the type and / or thickness of the hole transport layer, and the type and / or thickness of the electrode layer. See Table 1 for details.

[0267] It is understandable that when the types and / or amounts of raw materials used in preparing the perovskite light absorbing layer are different, the types of materials of the prepared perovskite light absorbing layer are different, and the types of raw materials added in preparing the perovskite light absorbing layer can be inferred from the types of the prepared perovskite light absorbing layer. Therefore, for the purpose of clarity and simplicity, the following Table 1 only lists the types of materials of the perovskite light absorbing layers prepared in each embodiment and comparative example.

[0268] Example 19

[0269] The main difference between the preparation method of the perovskite solar cell in Example 19 and the preparation method of the perovskite solar cell in Example 1 is that the phosphorus-containing passivator M1 is not added to the perovskite light-absorbing layer. After the perovskite light-absorbing layer is prepared, a 0.5 mg / mL isopropanol solution dissolved with the phosphorus-containing passivator M1 is spin-coated on the surface of the perovskite light-absorbing layer at a speed of 3000 rpm to prepare a passivation layer with a thickness of 5 nm.

[0270] Example 20

[0271] The main difference between the preparation method of the perovskite solar cell in Example 20 and the preparation method of the perovskite solar cell in Example 1 is that the phosphorus-containing passivator M1 is not added to the perovskite light-absorbing layer, and after the hole transport layer is prepared, a 0.5 mg / mL isopropanol solution dissolved with the phosphorus-containing passivator M1 is spin-coated on the surface of the hole transport layer at a speed of 3000 rpm to prepare a passivation layer with a thickness of 5 nm.

[0272] Examples 25-26

[0273] The difference between the preparation method of the perovskite solar cell in Examples 25-26 and the preparation method of the perovskite solar cell in Example 19 is that the thickness of the passivation layer is different, as shown in Table 1 for details.

[0274] Comparative Example 1

[0275] The difference between Comparative Example 1 and Example 21 is that no phosphorus-containing passivating agent is added, and all other conditions are the same. For details, see Table 1.

[0276] Comparative Example 2

[0277] The difference between Comparative Example 2 and Example 21 is that a passivator X having the following structure is used instead of the phosphorus-containing passivator M1, and all other aspects are the same. Detailed information is shown in Table 1.

[0278] Comparative Example 3

[0279] The difference between Comparative Example 3 and Example 1 is that a passivator Y having the following structure is used instead of the phosphorus-containing passivator M1, and all other aspects are the same.

[0280] The test parameters of the above embodiments and comparative examples are shown in Table 1.

[0281] Table 1 Note: “ / ” indicates that the structure or substance does not exist.

[0282] Among them, n1 represents the mass ratio of phosphorus-containing passivator in the perovskite light-absorbing layer, BCP represents 2,9-dimethyl-4,7-biphenyl-1,10-o-phenanthroline, PC 61 BM represents [6,6]-phenyl C 61 Methyl butyrate; FTO represents fluorine-doped tin dioxide, wherein the fluorine doping amount is 5 atomic percent; M1 upper passivation represents that after the perovskite light absorbing layer is prepared, a passivation layer is prepared on the surface of the perovskite light absorbing layer; M2 lower passivation represents that after the hole transport layer is prepared, a passivation layer is prepared on the surface of the hole transport layer.

[0283] It should be noted that the thicknesses of the hole transport layer, electron transport layer, perovskite light absorbing layer, passivation layer, barrier layer and electrode layer in the above embodiments and comparative examples were measured using an atomic force microscope.

[0284] 3. Perovskite solar cell performance test

[0285] Photoelectric conversion efficiency test

[0286] A solar simulator from Guangyan was used to conduct tests according to the national standard IEC61215. Crystalline silicon solar cells were used to calibrate the light intensity to achieve the same sunlight intensity, AM 1.5. The perovskite solar cells in the above embodiments and comparative examples were connected to a digital source meter, and the photoelectric conversion efficiency was measured on the 3rd and 30th days under illumination. The results are shown in Table 2.

[0287] Table 2

[0288] From the comparison of the results of Examples 1-26 and Comparative Examples 1-3 in Table 2, it can be seen that adding the phosphorus-containing passivator of the present application when preparing perovskite solar cells can improve the photoelectric conversion efficiency and stability of the perovskite solar cells.

[0289] The difference between Example 1 and Examples 21-24 is that the mass proportion of the phosphorus-containing passivator in the perovskite light-absorbing layer is different. From the results of Example 1 and Examples 21-24, it can be seen that when the content of M1 added to the perovskite layer is about 0.1%, the perovskite battery device exhibits better efficiency and higher stability.

[0290] The difference between Example 19 and Examples 25-26 is the thickness of the passivation layer. From the results of Examples 19 and 25-26, it can be seen that when M1 is layered alone on the upper interface of the perovskite layer with a thickness of about 5 nm, the perovskite battery device exhibits better efficiency and higher stability.

[0291] The technical features of the above-mentioned embodiments can be combined arbitrarily. In order to make the description concise, not all possible combinations of the technical features in the above-mentioned embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0292] The above-described embodiments merely represent several implementation methods of the present application. While the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent. It should be noted that a person skilled in the art could make several modifications and improvements without departing from the spirit of the present application, all of which fall within the scope of protection of the present application. Therefore, the scope of protection of the patent in this application shall be based on the appended claims, and the specification and drawings may be used to interpret the claims.

Claims

1. A phosphorus-containing passivating agent, comprising an ionic compound, wherein the ionic compound comprises a cationic group; the cationic group has a structure as shown in the following formula (I): ALB (I) in, A represents an organic phosphorus group having a lone pair of electrons, B represents an organic phosphorus salt group having a positive charge, and L represents a connecting group between the organic phosphorus group and the organic phosphorus salt group.

2. The phosphorus-containing passivating agent of claim 1, wherein the ionic compound further comprises an anionic group, the anionic group comprising one or more of a halogen anion, a quasi-halogen anion, a tetrafluoroborate ion, a hexafluorophosphate ion, and a dimethylsulfonamide ion.

3. The phosphorus-containing passivating agent according to any one of claims 1 to 2, wherein L comprises one or more of a substituted or unsubstituted alkylene group, a substituted or unsubstituted cycloalkylene group, and a substituted or unsubstituted arylene group.

4. The phosphorus-containing passivator according to any one of claims 1 to 3, wherein the phosphorus-containing passivator has a structure as shown in the following formula (II): in, R 1 , R 2 , R 3 , R 4 , R 5 including any one of substituted or unsubstituted alkyl, substituted or unsubstituted cycloalkyl and substituted or unsubstituted aryl; L includes any one of a substituted or unsubstituted alkylene group, a substituted or unsubstituted cycloalkylene group, and a substituted or unsubstituted arylene group; X includes any one of a halogen anion and a halogen-containing anion group; 1≤n1≤4, 1≤n2≤10, 1≤n3≤4, n1, n2, n3 are integers.

5. The phosphorus-containing passivating agent as claimed in claim 4, wherein the R 1 , the R 2 , the R 3 , the R 4 , the R 5 Including any one of an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 1 to 10 carbon atoms, a phenyl group and a substituted phenyl group; the substituent in the substituted phenyl group includes one or more of a halogen, an alkyl group, a cycloalkyl group, an alkoxy group, an alkylthio group, an alkylsilyl group and an alkoxysilyl group; Optionally, the substituents in the substituted phenyl group include one or more of halogen, alkyl having 1-10 carbon atoms, cycloalkyl having 1-10 carbon atoms, alkoxy having 1-10 carbon atoms, alkylthio having 1-10 carbon atoms, alkylsilyl having 1-10 carbon atoms and alkoxysilyl having 1-10 carbon atoms.

6. The phosphorus-containing passivating agent according to any one of claims 4 to 5, wherein the R 1 , the R 2 Including any one of a cycloalkyl group and a phenyl group having 1 to 10 carbon atoms; Optionally, the R 1 , the R 2 The same includes any of a cycloalkyl group and a phenyl group having 1 to 10 carbon atoms.

7. The phosphorus-containing passivating agent according to any one of claims 4 to 6, wherein R 3 , the R 4 , the R 5 Any one of the alkyl groups having 1 to 10 carbon atoms; Optionally, the R 3 , the R 4 , the R 5 The same includes any one of alkyl groups having 1 to 10 carbon atoms.

8. The phosphorus-containing passivating agent according to any one of claims 1 to 7, wherein the L comprises any one of an alkylene group having 1 to 10 carbon atoms, a cycloalkylene group having 1 to 10 carbon atoms, a phenylene group, and a substituted phenylene group; the substituent in the substituted phenylene group comprises one or more of a halogen, an alkyl group, a cycloalkyl group, an alkoxy group, an alkylthio group, an alkylsilyl group, and an alkoxysilyl group; Optionally, the substituents in the substituted phenylene group include halogen, alkyl with 1 to 10 carbon atoms, cycloalkyl with 1 to 10 carbon atoms, alkoxy with 1 to 10 carbon atoms, alkylthio with 1 to 10 carbon atoms, The invention can be one or more of an alkylsilyl group and an alkoxysilyl group having 1 to 10 carbon atoms.

9. The phosphorus-containing passivating agent according to any one of claims 1 to 8, wherein L comprises any one of an alkylene group having 1 to 10 carbon atoms.

10. The phosphorus-containing passivating agent according to any one of claims 4 to 9, wherein the X comprises any one of an iodide ion and a boron tetrafluoride ion.

11. The phosphorus-containing passivating agent according to any one of claims 1 to 10, wherein the phosphorus-containing passivating agent comprises any one of the following structural formulas:

12. A perovskite solar cell comprising the phosphorus-containing passivator according to any one of claims 1 to 11.

13. The perovskite solar cell according to claim 12, wherein the perovskite solar cell comprises a perovskite light absorbing layer, and the perovskite light absorbing layer comprises the phosphorus-containing passivating agent; Optionally, the mass proportion of the phosphorus-containing passivator in the perovskite light-absorbing layer is 0.01%-1%; optionally 0.05%-0.5%.

14. The perovskite solar cell according to claim 12, wherein the perovskite solar cell comprises a stacked perovskite light absorbing layer and a passivation layer, the passivation layer is located on the light incident side or the light emitting side of the perovskite light absorbing layer, and the passivation layer comprises the phosphorus-containing passivator; Optionally, the thickness of the passivation layer is 0.1 nm-10 nm; optionally 1 nm-10 nm.

15. The perovskite solar cell according to any one of claims 13 to 14, wherein the perovskite light absorbing layer comprises a molecular formula of ABX 3 or A 2 CDX 6 Active materials; Optionally, the molecular formula is ABX 3 or A 2 CDX 6 The active material has at least one of the following characteristics: (1) A includes one or more of an organic cation and an inorganic cation; optionally, A includes a monovalent amidine cation, a monovalent amine cation and a Cs + One or more of; (2) B includes one or more of organic cations and inorganic cations; optionally, B includes Pb 2+ and Sn 2+ One or more of; (3) C includes one or more of organic cations and inorganic cations; optionally, C includes Ag + ; (4) D includes one or more of organic cations and inorganic cations; optionally, D includes Bi 3+ , Sb 3+ , and In 3+ One or more of; (5) X includes one or more of an organic anion and an inorganic anion; optionally, X includes Br - and I - One or more of .

16. The perovskite solar cell according to any one of claims 13 to 15, wherein the perovskite light absorbing layer has at least one of the following characteristics: (1) The thickness of the perovskite light absorbing layer is 100nm-1000nm; (2) The band gap width of the perovskite light absorbing layer is within the range of 1.2 eV to 2.3 eV.

17. The perovskite solar cell according to any one of claims 13 to 16, wherein the perovskite solar cell further comprises an electron transport layer, a barrier layer and an electrode layer located on the light-emitting side of the perovskite light-absorbing layer, the electron transport layer, the barrier layer and the electrode layer are stacked in sequence, wherein the electron transport layer is closer to the perovskite light-absorbing layer; Optionally, the material of the barrier layer includes 2,9-dimethyl-4,7-biphenyl-1,10-phenanthroline, SnO 2 , ZnO and one or more of cerium-containing oxides; Optionally, the barrier layer has a thickness of 0.5 nm-20 nm.

18. A photovoltaic module comprising the perovskite solar cell according to any one of claims 12 to 17.

19. A photovoltaic system comprising the photovoltaic module according to claim 18.

20. An electrical device comprising the perovskite solar cell according to any one of claims 12 to 17.

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