Imaging device
The imaging device addresses power consumption and settling time issues by using a variable reset potential for vertical signal lines based on illuminance, enhancing efficiency and performance.
Patent Information
- Application Number
- PCT/JP2024/021283
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2023-06-28
- Filing Date
- 2024-06-12
- Publication Date
- 2025-01-02
AI Technical Summary
Conventional CMOS image sensors face challenges with high power consumption and prolonged settling time of vertical signal lines due to constant current loads and capacitor-based charge accumulation techniques, which also limit the ability to lower the signal line potential effectively.
An imaging device with a variable reset potential for vertical signal lines, determined by an illuminance determination unit, which adjusts the reset potential based on illuminance levels to optimize power usage and shorten settling time, incorporating a reset potential switcher and multiple reset potential settings to manage noise and signal potentials.
The solution reduces power consumption and shortens the settling time of vertical signal lines by dynamically adjusting the reset potential based on illuminance, improving the imaging device's efficiency and performance.
Smart Images

Figure JP2024021283_02012025_PF_FP_ABST
Abstract
Description
Imaging device
[0001] The present disclosure relates to an imaging device.
[0002] In a typical CMOS image sensor (hereinafter referred to as CIS), a vertical signal line is provided for each pixel column arranged in the vertical (lengthwise) direction, and each vertical signal line transmits pixel signals output from each pixel in the corresponding pixel column. The time required for the potential of a vertical signal line to stabilize is called the settling time. Conventional CIS sometimes use a constant current load to shorten the settling time of the vertical signal line. A constant current load has the problem of high power consumption because it continuously flows current from the power supply voltage through the vertical signal line to the ground node.
[0003] In response to this, Patent Document 1 discloses a technology in which a current flows from a power supply voltage node connected to the drain of an amplification transistor in a pixel to a vertical signal line through the amplification transistor, thereby storing charge in a capacitor connected to the vertical signal line. In Patent Document 1, a charge corresponding to a potential difference obtained by subtracting the threshold voltage of the amplification transistor from the potential of the floating diffusion (hereinafter referred to as FD potential) can be stored in the capacitor, and after the charge is stored in the capacitor, no current flows from the amplification transistor to the vertical signal line, thereby achieving power savings.
[0004] Japanese Patent Application Laid-Open No. 2021-40270
[0005] In the circuit configuration of Patent Document 1, current continues to flow from the amplifier transistor to the vertical signal line until a charge corresponding to the above-mentioned potential difference is accumulated in the capacitor, resulting in the problem that a small current flows even when the amplifier transistor is about to turn off, lengthening the settling time of the vertical signal line.
[0006] Furthermore, in the circuit configuration of Patent Document 1, when the FD potential rises, the potential of the vertical signal line can be raised in response to the FD potential, but even if the FD potential falls, the potential of the vertical signal line cannot be lowered in response to the fall.
[0007] For this reason, in the circuit configuration of Patent Document 1, it is necessary to forcibly lower the vertical signal line to the reset potential. For example, when high-intensity light is incident on a pixel, the potential of the pixel signal is low, so it does not take much time to transition the vertical signal line from the reset potential to the pixel signal potential, but when low-intensity light is incident on a pixel, the potential difference between the reset potential of the vertical signal line and the potential of the pixel signal is large, so it takes time to stabilize the potential of the vertical signal line and also increases power consumption.
[0008] Therefore, the present disclosure provides an imaging device that can reduce power consumption by making the reset potential of the vertical signal line variable and shorten the settling time of the vertical signal line.
[0009] In order to solve the above problems, according to the present disclosure, there is provided an imaging device comprising: a plurality of pixels arranged in one direction, each having a photoelectric conversion element; a signal line transmitting a plurality of pixel signals photoelectrically converted by the plurality of pixels; an illuminance determination unit determining the illuminance of light incident on the plurality of pixels; and a reset potential switcher switching a reset potential for initializing the potential of the signal line based on the illuminance determined by the illuminance determination unit.
[0010] The illuminance determining unit may determine the illuminance in at least two stages.
[0011] The illuminance determination unit may determine whether the illuminance is high or low, and the reset potential switch may set the reset potential higher when the illuminance is determined to be low than when the illuminance is determined to be high.
[0012] The reset potential switch may set the reset potential when the signal line is at a noise potential higher than the reset potential when the illuminance determination unit determines that the illuminance is low.
[0013] The display device may include a pixel array unit having the plurality of pixels arranged in a first direction and a second direction; and a plurality of the signal lines each extending in the second direction and arranged in the first direction, transmitting two or more pixel signals photoelectrically converted by two or more of the pixels arranged in the second direction, wherein the illuminance determination unit and the reset potential switch may be provided for each of the plurality of signal lines.
[0014] The reset potential switch may select one of a plurality of input potentials having different potential levels as the reset potential.
[0015] The plurality of input potentials may include at least three types of input potentials for setting a noise potential, a low-illuminance reset potential, or a high-illuminance reset potential on the signal line.
[0016] Each of the plurality of pixels may have a transfer transistor and a floating diffusion, and the illuminance determination unit may determine the illuminance based on charges leaking from the photoelectric conversion element to the floating diffusion before starting charge transfer from the photoelectric conversion element to the floating diffusion via the transfer transistor by photoelectric conversion.
[0017] The illuminance determining unit may determine the illuminance based on a signal potential of the pixel signal corresponding to an amount of light incident on the plurality of pixels.
[0018] The plurality of pixels may be capable of switching photoelectric conversion efficiency between at least two stages, and the illuminance determining unit may determine the illuminance based on a signal potential of the pixel signal when the photoelectric conversion efficiency is at its maximum.
[0019] The device may further include a signal processing unit that performs signal processing including generating a digital signal corresponding to the potential of the signal line based on the result of comparing the potential of the signal line with a reference signal, and the reset potential switch may set the reset potential corresponding to the noise potential on the signal line when the signal line is at a noise potential, and then set the reset potential corresponding to the illuminance determined by the illuminance determination unit on the signal line.
[0020] Each of the plurality of pixels may have a plurality of the photoelectric conversion elements having different sensitivities, and the reset potential switch may, after determining the illuminance in the illuminance determination unit, set the reset potential corresponding to the noise potential to the signal line to read out the noise potential, and then set the reset potential corresponding to the illuminance determined by the illuminance determination unit to the signal line for each of the plurality of photoelectric conversion elements in turn to read out the signal potential.
[0021] The display device may further include a reference signal generating circuit that generates a reference signal for setting the signal line to a reference potential, and the illuminance determining unit may determine the illuminance based on a potential difference between the potential of the signal line and the reference potential.
[0022] The power supply may further comprise: a constant current source that causes a constant current to flow through the signal line; and a first switch that connects the constant current source to the signal line only when the signal line is set to a reference potential.
[0023] The reset potential switch may have a plurality of reset potential setting circuits connected in parallel between the signal line and a reference potential node, and each of the plurality of reset potential setting circuits may have a voltage source having a different potential level, and a second switch that switches whether or not to set the potential of the voltage source as the reset potential based on the illuminance determined by the illuminance determination unit.
[0024] The illuminance determination unit may determine whether the illuminance is high or low, and when the illuminance determination unit determines that the illuminance is low, the plurality of reset potential setting circuits may set the reset potential to a potential of the voltage source that is higher in potential level than when the illuminance determination unit determines that the illuminance is high.
[0025] The reset potential switch has a plurality of source follower circuits connected in series between the signal line and a reference potential node, a third switch, and a current source, and each of the plurality of source follower circuits has a transistor having a gate to which a potential of a different potential level is input, and a fourth switch that switches whether or not the signal line is set to a reset potential corresponding to the potential input to the gate of the transistor, and the third switch is turned on when the signal line is set to the reference potential and uses the current source to pass a constant current through the signal line, and after the signal line is set to the reference potential, any one of the plurality of fourth switches is turned on based on the illuminance determined by the illuminance determination unit to set the reset potential of the signal line.
[0026] The illuminance determination unit may determine whether the illuminance is high or low, and when the illuminance determination unit determines that the illuminance is low, the plurality of source follower circuits may set a reset potential of the signal line by turning on the fourth switch connected to the transistor having a gate to which a higher potential is input than when the illuminance determination unit determines that the illuminance is high.
[0027] The reset potential switch has a single voltage source connected to the signal line and a plurality of reset potential setting circuits connected in parallel between the signal line and the voltage source, each of the plurality of reset potential setting circuits has a third switch that switches whether or not to select the corresponding reset potential setting circuit, and a potential setting unit connected in series to the third switch, and the potential setting units may each have a different number of diodes or diode-connected transistors connected in series, or the third switch may be connected to the voltage source.
[0028] The illuminance determination unit may determine whether the illuminance is high or low, and when the illuminance determination unit determines that the illuminance is low, the plurality of reset potential setting circuits may set the reset potential to a potential of a greater number of diodes or diode-connected transistors connected in series than when the illuminance determination unit determines that the illuminance is high.
[0029] 1 is a block diagram showing a schematic configuration of an imaging device according to the present disclosure. FIG. 2 is a schematic perspective view showing an example of an imaging device according to the present disclosure having a two-layer structure. FIG. 3 is a schematic perspective view showing an example of an imaging device according to the present disclosure having a three-layer structure. FIG. 4 is a circuit diagram showing a main part of an imaging device according to a first embodiment. FIG. 5 is a timing chart of an imaging device according to a first embodiment. FIG. 6 is a circuit diagram showing a main part of an imaging device according to a second embodiment. FIG. 7 is a timing chart of an imaging device according to a second embodiment. FIG. 8 is a circuit diagram showing a main part of an imaging device according to a third embodiment. FIG. 9 is a waveform diagram showing a reset potential that a reset potential switch sets to a vertical signal line according to illuminance. FIG. 10 is a circuit diagram showing a main part of an imaging device according to a fourth embodiment. FIG. 11 is a circuit diagram showing a main part of an imaging device according to a fifth embodiment. FIG. 12 is a circuit diagram showing a main part of an imaging device according to a sixth embodiment. FIG. 13 is a block diagram showing an example of a schematic configuration of a vehicle control system. FIG. 14 is an explanatory diagram showing an example of the installation positions of an outside vehicle information detection unit and an imaging unit.
[0030] Hereinafter, an embodiment of an imaging device will be described with reference to the drawings. The following description will focus on the main components of the imaging device, but the imaging device may include components and functions that are not shown or described. The following description does not exclude components and functions that are not shown or described.
[0031] Fig. 1 is a block diagram showing a schematic configuration of an image pickup device 1 according to the present disclosure. As shown in Fig. 1, the image pickup device 1 according to the present disclosure includes a pixel array unit 2, a vertical scanning circuit 3, a column readout circuit 4, a column signal processing circuit 5, a horizontal scanning circuit 6, a control circuit 7, and a digital-to-analog converter (hereinafter, referred to as DAC) 8.
[0032] The pixel array unit 2 has a plurality of pixels 10. The plurality of pixels 10 are arranged in one or two dimensions. In this specification, a pixel array unit 2 in which a plurality of pixels 10 are arranged in a first direction (horizontal direction) X and a second direction (vertical direction) Y will be described. In this specification, a plurality of pixels 10 arranged in the first direction X will be referred to as a pixel row, and a plurality of pixels 10 arranged in the second direction Y will be referred to as a pixel column. In the pixel array unit 2, a plurality of pixel rows are arranged in the second direction Y, and a plurality of pixel columns are arranged in the first direction X. In the pixel array unit 2, a vertical signal line VSL is arranged for each pixel column, and a row selection line L1 is arranged for each pixel row.
[0033] As will be described later, the pixel 10 includes a photoelectric conversion element 11, a transfer transistor 12, a reset transistor 13, an amplification transistor 14, and a selection transistor 15. The pixel 10 may also be provided with a drain transistor or a conversion efficiency switching transistor.
[0034] Furthermore, as will be described later, the pixel 10 may be provided with a plurality of photoelectric conversion elements 11 each having a different sensitivity.
[0035] The photoelectric conversion element 11 accumulates electric charges corresponding to the amount of incident light. The photoelectric conversion element 11 is, for example, a photodiode PD. The transfer transistor 12 switches whether or not to transfer the accumulated electric charges in the photodiode PD to the floating diffusion FD. The reset transistor 13 switches whether or not to set the floating diffusion FD to a reset signal level by discharging the electric charges in the floating diffusion FD to a power supply voltage VDD node. The amplification transistor 14, together with the selection transistor 15, forms a source follower circuit and generates a pixel signal corresponding to the accumulated electric charges in the floating diffusion FD and outputs it to a vertical signal line VSL. The selection transistor 15 outputs the pixel signal to the vertical signal line VSL when the selection signal is at a high level.
[0036] The vertical scanning circuit 3 sequentially drives the row selection lines L1. For example, the vertical scanning circuit 3 sets the row selection line L1 to be driven to a high-level potential. As a result, the selection signal of each pixel 10 included in the pixel row connected to the row selection line L1 to be driven becomes high, and the selection transistor 15 is turned on.
[0037] The column readout circuit 4 has a plurality of current sources that draw currents flowing through a plurality of vertical signal lines VSL arranged in the first direction X. The column readout circuit 4 may also have a plurality of capacitors that hold charges according to the potentials of the plurality of vertical signal lines VSL. The column readout circuit 4 is also called a load MOS circuit.
[0038] The column signal processing circuit 5 generates a digital signal based on the result of comparing the potentials of multiple vertical signal lines VSL with a reference signal (also called a ramp signal) Ramp. As will be described later, the column signal processing circuit 5 has multiple analog-to-digital converters (AD converters). Each AD converter has a comparator and a counter. The comparator compares the potential of the corresponding vertical signal line VSL with the reference signal Ramp. The reference signal Ramp is generated by the DAC 8. The counter counts until the comparator detects a match between the potential of the vertical signal line VSL and the reference signal Ramp. The count value of the counter corresponds to a digital signal. The column signal processing circuit 5 can also perform correlated double sampling (CDS) processing to detect the difference between the noise potential and the signal potential.
[0039] The horizontal scanning circuit 6 sequentially selects and outputs digital signals output from a plurality of AD converters corresponding to a plurality of vertical signal lines VSL arranged in the first direction X.
[0040] The control circuit 7 controls the operation timings of the vertical scanning circuit 3 , the column readout circuit 4 , the column signal processing circuit 5 , the horizontal scanning circuit 6 , and the DAC 8 .
[0041] The imaging device 1 according to the present disclosure can be realized as a stacked chip. FIG. 2A is a schematic perspective view showing an example of an imaging device 1 according to the present disclosure having a two-layer structure. The imaging device 1 of FIG. 2A includes a first substrate 16 disposed on the light incident surface side and a second substrate 17 laminated on the first substrate 16. The first substrate 16 includes, for example, a photodiode PD, a transfer transistor 12, a reset transistor 13, an amplifier transistor 14, and a selection transistor 15 for each pixel 10. The second substrate 17 includes, for example, a vertical scanning circuit 3, a column readout circuit 4, a column signal processing circuit 5, a horizontal scanning circuit 6, and a control circuit 7. The first substrate 16 and the second substrate 17 are bonded and transmit signals using, for example, a copper-copper connection (CCC). Alternatively, the first substrate 16 and the second substrate 17 may be bonded using vias or bumps other than CCC.
[0042] 2B is a schematic perspective view showing an example of an imaging device 1 according to the present disclosure having a three-layer structure. The imaging device 1 in FIG. 2B includes a first substrate 16 disposed on the light incident surface side, a second substrate 17 laminated on the first substrate 16, and a third substrate 18 laminated on the second substrate 17. For example, the photodiode PD and transfer transistor 12 of each pixel 10 are disposed on the first substrate 16. The pixel transistors other than the transfer transistor 12 of each pixel 10 (such as the reset transistor 13, amplification transistor 14, and selection transistor 15) are disposed on the second substrate 17. In addition, some circuits, including the vertical scanning circuit 3, column readout circuit 4, column signal processing circuit 5, horizontal scanning circuit 6, and DAC 8, are disposed on the second substrate 17, and the remaining circuits are disposed on the third substrate 18. The first substrate 16 and the second substrate 17 are joined and signal transmitted by, for example, a TSV (Through Silicon Via), and the second substrate 17 and the third substrate 18 are joined and signal transmitted by, for example, a CCC.
[0043] 3 is a circuit diagram showing a main part of an image pickup device 1 according to a first embodiment. More specifically, FIG. 3 shows the circuit configuration of pixels 10, column readout circuits 4, and column signal processing circuits 5 connected to one vertical signal line VSL.
[0044] The pixel 10 according to the first embodiment includes a photodiode PD, a floating diffusion FD, a transfer transistor 12, a reset transistor 13, an amplification transistor 14, and a selection transistor 15, as well as a conversion efficiency switching transistor 19. A charge holding unit LFD is connected to the conversion efficiency switching transistor 19 separately from the floating diffusion FD.
[0045] The pixel 10 performs photoelectric conversion at high conversion efficiency when the conversion efficiency switching transistor 19 is off, and at low conversion efficiency when the conversion efficiency switching transistor 19 is on. In this specification, the mode in which photoelectric conversion is performed at high conversion efficiency is called HCG (High Conversion Gain), and the mode in which photoelectric conversion is performed at low conversion efficiency is called LCG (Low Conversion Gain). The transistors provided in the pixel 10 are collectively called pixel transistors. In this specification, an example in which the pixel transistor is configured with an NMOS transistor is shown, but it is also possible to configure it with a PMOS transistor.
[0046] The amplification transistor 14 and the selection transistor 15 form a source follower circuit, and the source of the selection transistor 15 is connected to a vertical signal line VSL. A capacitor 21 that stores a charge according to the FD potential is connected to the vertical signal line VSL via the source follower circuit.
[0047] In this way, in the circuit of FIG. 3, charge according to the FD potential is accumulated in the capacitor 21 connected to the vertical signal line VSL via the source follower circuit, and therefore this source follower circuit can be called a dynamic source follower circuit.
[0048] The dynamic source follower circuit can quickly store charge in capacitor 21 in proportion to the increase in FD potential when the FD potential rises, but does not have the function of discharging charge from capacitor 21 even when the FD potential drops.
[0049] Therefore, the imaging device 1 according to the first embodiment includes a reset potential switch 22 that forcibly sets the vertical signal line VSL to a reset potential. The reset potential switch 22 is provided for each vertical signal line VSL. The reset potential switch 22 is provided in, for example, the column readout circuit 4. The reset potential switch 22 can switch the reset potential according to the illuminance.
[0050] The imaging device 1 according to the first embodiment includes an illuminance determination unit 23 for each vertical signal line VSL. The illuminance determination unit 23 determines the illuminance of light incident on the pixels 10 connected to the corresponding vertical signal line VSL. The illuminance determination unit 23 is provided in, for example, the column signal processing circuit 5. More specifically, the illuminance determination unit 23 is connected to the output node of the comparator 27 of the column signal processing circuit 5. The illuminance determination unit 23 determines the illuminance in at least two stages. While this specification describes an example in which the illuminance determination unit 23 determines high or low illuminance, the illuminance determination unit 23 may determine three or more stages of illuminance. In this manner, the illuminance determination unit 23 determines the illuminance based on the signal potential of pixel signals corresponding to the amount of light incident on the pixels. More specifically, the illuminance determination unit 23 determines the illuminance based on the signal potential of pixel signals in a state in which the photoelectric conversion efficiency is maximized.
[0051] The reset potential switch 22 switches the reset potential for initializing the potential of the vertical signal line VSL based on the illuminance determined by the illuminance determination unit 23. When the illuminance is determined to be low, the reset potential switch 22 sets a higher reset potential than when the illuminance is determined to be high. The reason for this is that when the illuminance is low, the signal potential of the pixel signal is higher than when the illuminance is high, and therefore, when the reset potential is lowered, it becomes necessary to change the potential of the vertical signal line VSL significantly, and it takes time for the vertical signal line VSL to settle.
[0052] Furthermore, the reset potential switch 22 sets the reset potential when the vertical signal line VSL is at a noise potential higher than the reset potential when the illuminance is determined to be low by the illuminance determination unit 23. The noise potential is the potential of the vertical signal line VSL when the photodiode PD is not performing photoelectric conversion, and the signal level of the pixel signal corresponding to the noise potential is higher than the signal level of the pixel signal at low illuminance, so the reset potential for the noise potential is set higher in advance.
[0053] As shown in FIG. 3 , the reset potential switch 22 according to the first embodiment includes multiple reset potential setting circuits 24 connected in parallel between the corresponding vertical signal line VSL and a reference voltage node (e.g., a ground node). In the example shown in FIG. 3 , three reset potential setting circuits 24 are provided. Each reset potential setting circuit 24 includes a voltage source 25 having a different potential level and a switch (second switch) 26 that switches whether or not to set the potential of the voltage source 25 as the reset potential based on the illuminance determined by the illuminance determination unit 23. The multiple voltage sources 25 may be provided external to the imaging device 1. In this case, pads for applying voltages from the multiple external voltage sources 25 are provided in the imaging device 1. In this manner, the reset potential switch 22 selects one of multiple input potentials having different potential levels as the reset potential. The multiple input potentials include at least three types of input potentials for setting the vertical signal line VSL to a noise potential, a low-illuminance reset potential, or a high-illuminance reset potential.
[0054] 3 includes a voltage source 25 that supplies a potential for a noise potential, a voltage source 25 that supplies a potential for low illuminance, a voltage source 25 that supplies a potential for high illuminance, and three switches 26 connected to the voltage sources 25. Only one of the three switches 26 is turned on, and the potential of the voltage source 25 connected to the turned-on switch 26 is set as the reset potential of the vertical signal line VSL.
[0055] As shown in FIG. 3 , the illuminance determination unit 23 is connected to the output node of the comparator 27 of the column signal processing circuit 5. As will be described later, the illuminance determination unit 23 determines the illuminance based on, for example, the amount of light incident on the pixel 10. The pixel 10 outputs a pixel signal having a signal potential corresponding to the amount of incident light to the vertical signal line VSL. The comparator 27 outputs a comparison result between the potential of the vertical signal line VSL and a reference signal Ramp. The illuminance determination unit 23 determines the illuminance based on the output signal of the comparator 27. The reference signal Ramp is a ramp signal whose potential changes over time. When the reference signal Ramp is a ramp signal whose potential decreases over time, the lower the potential of the vertical signal line VSL, the slower the comparator 27 detects a match. The comparator 27 changes the logic of its output signal when it detects a match. The illuminance determination unit 23 can determine whether the illuminance is high or low based on, for example, the length of time it takes for the logic of the output signal of the comparator 27 to change.
[0056] The three switches 26 of the reset potential setting circuit 24 are switched on or off based on the determination result of the illuminance determination unit 23. Specifically, when the illuminance determination unit 23 determines that the illuminance is high, the switch 26 connected to the voltage source 25 that supplies a potential for high illuminance is turned on. When the illuminance determination unit 23 determines that the illuminance is low, the switch 26 connected to the voltage source 25 that supplies a potential for low illuminance is turned on. Furthermore, when reading out the noise potential, the switch 26 connected to the voltage source 25 that supplies a potential for the noise potential is turned on.
[0057] FIG. 3 shows the circuit configuration of the column readout circuit 4 and the column signal processing circuit 5 connected to one vertical signal line VSL, but a circuit similar to that in FIG. 3 is connected to each of a plurality of vertical signal lines VSL arranged in the first direction X.
[0058] 4 is a timing diagram of the image pickup device 1 according to the first embodiment. Fig. 4 shows the gate voltage TRG of the transfer transistor 12, the gate voltage RST of the reset transistor 13, the gate voltage FDG of the conversion efficiency switching transistor 19, the gate voltage SEL of the selection transistor 15, the reference signal Ramp output from the DAC 8, the on / off timing of the three switches 26 of the reset potential setting circuit 24, the potential of the vertical signal line VSL at high illuminance, the potential of the vertical signal line VSL at low illuminance, and the waveform of the potential of the vertical signal line VSL when illuminance determination is not performed. Hereinafter, the operation of the light emitting device according to the first embodiment will be described with reference to Fig. 4.
[0059] Although the imaging device 1 according to the first embodiment includes the illuminance determination unit 23, it is also possible to select a mode in which illuminance determination is not performed by the illuminance determination unit 23. In this case, the potential of the vertical signal line VSL has a waveform shown in the bottom row of FIG. 4 when illuminance determination is not performed.
[0060] 4 shows an example in which the row selection line L1 of a certain pixel row is driven, and the selection transistors 15 of all pixels 10 included in this pixel row are turned on. Between times t1 and t2, the reset transistor 13 is turned on, and the charge (electrons) in the floating diffusion FD is extracted to the power supply voltage VDD node, resetting the FD potential. Between times t1 and t3, the conversion efficiency switching transistor 19 is turned on, and the charge (electrons) held in the charge holding unit LFD connected to the conversion efficiency switching transistor 19 is also extracted to the power supply voltage VDD node. Between times t1 and t2, the signal level of the reference signal Ramp output from the DAC 8 is constant (high-level potential).
[0061] Between times t2 and t3, the signal level of the reference signal Ramp output from the DAC 8 gradually decreases. The period between times t2 and t3 is a period during which the noise potential is read out at low conversion efficiency. At time t3, the switch 26 connected to the voltage source 25 for noise potential in the reset potential switch 22 is temporarily turned on. This sets the vertical signal line VSL to the reset potential for noise potential. Also, at time t3, the reference signal Ramp output from the DAC 8 returns to its original high-level potential, and thereafter the signal level of the reference signal Ramp gradually decreases until time t4. Furthermore, at time t3, the conversion efficiency switching transistor 19 is turned off.
[0062] The period from time t3 to t4 is a period during which the noise potential is read out at high conversion efficiency. At time t4, the switch 26 connected to the high-illuminance voltage source 25 in the reset potential switch 22 is temporarily turned on. This sets the vertical signal line VSL to the high-illuminance reset potential. Thus, at time t4 when the noise potential reading is completed, the vertical signal line VSL is lowered to the high-illuminance reset potential regardless of the illuminance. Also, at time t4, the reference signal Ramp output from the DAC 8 returns to its original high-level potential, and thereafter, the signal level of the reference signal Ramp gradually decreases until time t5.
[0063] Between times t1 and t4, regardless of the illuminance of light incident on the pixel 10, the noise potential is read out in a state where a reset potential for the noise potential is set on the vertical signal line VSL.
[0064] The period from time t4 to t5 is a period for reading out the signal potential at high conversion efficiency. Also, the illuminance determination unit 23 determines the illuminance during the period from time t4 to t5. At time t4, the vertical signal line VSL is set to a reset potential for high illuminance. Therefore, during the period from time t4 to t5, if the illuminance is high, the potential of the vertical signal line VSL does not rise much, but if the illuminance is low, the potential of the vertical signal line VSL rises significantly.
[0065] At time t5, the conversion efficiency switching transistor 19 is turned on, and the signal potential is read out at low conversion efficiency from time t5 to t6. At time t5, depending on the illuminance determined by the illuminance determination unit 23, the switch 26 connected to the high illuminance voltage source 25 or the switch 26 connected to the low illuminance voltage source 25 in the reset potential switch 22 is turned on. If the illuminance determination unit 23 determines that the illuminance is high, the switch 26 connected to the high illuminance voltage source 25 is turned on, and the vertical signal line VSL is set to the high illuminance reset potential. On the other hand, if the illuminance determination unit 23 determines that the illuminance is low, the switch 26 connected to the low illuminance voltage source 25 is turned on, and the vertical signal line VSL is set to the low illuminance reset potential. In this case, the potential of the vertical signal line VSL is raised to a level higher than that at time t4. Furthermore, when the illuminance determination unit 23 does not perform an illuminance determination, the vertical signal line VSL is set to a reset potential at time t5 similar to that when the illuminance is determined to be high.
[0066] As described above, in the first embodiment, after a reset potential of a potential level according to the illuminance determined by the illuminance determination unit 23 is set on the vertical signal line VSL (time t5), the signal potential of the pixel signal is read out. Therefore, it is possible to reduce the amount of fluctuation in the potential of the vertical signal line VSL, shorten the settling time of the vertical signal line VSL, and reduce the current flowing through the vertical signal line VSL, thereby achieving power saving.
[0067] Second Embodiment FIG. 5 is a circuit diagram showing a main part of an imaging device 1 according to a second embodiment. The imaging device 1 according to the second embodiment includes a pixel 10 having a different configuration from that of the imaging device 1 according to the first embodiment. The pixel 10 according to the second embodiment includes multiple photoelectric conversion elements 11 (e.g., photodiodes PD) each having a different light-receiving area. In the example shown in FIG. 5, two photodiodes PD with different light-receiving areas are included, but three or more photodiodes PD may be included. Hereinafter, the two photodiodes PD included in the pixel 10 of FIG. 5 are referred to as a first photodiode PD1 and a second photodiode PD2. For example, the first photodiode PD1 has a larger light-receiving area than the second photodiode PD2. The larger the light-receiving area, the weaker the light can be detected, but the greater the likelihood of saturation. By including multiple photodiodes PD with different light-receiving areas in the pixel 10, the dynamic range can be expanded.
[0068] 5 also has a charge holding unit 28 that holds the accumulated charge in the second photodiode PD2, and a second transfer transistor 12b that switches whether to connect the source of the reset transistor 13 and the cathode of the second photodiode PD2. Hereinafter, the transistor that transfers the accumulated charge in the first photodiode PD1 to the floating diffusion FD will be referred to as the first transfer transistor 12a.
[0069] The imaging device 1 according to the second embodiment has the same configuration as the imaging device 1 according to the first embodiment, except that the configuration of the pixel 10 differs from that of the first embodiment.
[0070] 6 is a timing diagram of the imaging device 1 according to the second embodiment. Fig. 6 shows the gate potential waveforms of the first transfer transistor 12 a, the reset transistor 13, the conversion efficiency switching transistor 19, the second transfer transistor 12 b, and the selection transistor 15, the potential waveform of the reference signal Ramp output from the DAC 8, and the potential waveform of the vertical signal line VSL. The potential waveform of the vertical signal line VSL includes a potential waveform when no illuminance determination is performed or when illuminance is high, and a potential waveform when illuminance is low.
[0071] In the first embodiment, the illuminance determination unit 23 determines the illuminance after the noise potential is read out, but in the second embodiment, the illuminance determination unit 23 determines the illuminance before the noise potential is read out. More specifically, in the first embodiment, the illuminance is determined based on the charge generated by photoelectric conversion of the photodiode PD, but in the second embodiment, the illuminance is determined based on the charge that has overflowed from the photodiode PD to the floating diffusion FD with the first transfer transistor 12 a turned off.
[0072] At time t1 in Figure 6, the vertical signal line VSL is set to the reset potential of the noise potential regardless of the illuminance. Between times t1 and t2, the first photodiode PD1 performs exposure. Charges that cannot be accumulated in the first photodiode PD1 and overflow are transferred to the floating diffusion FD. The FD potential becomes a potential corresponding to the accumulated charge in the floating diffusion FD. The more charge that overflows from the first photodiode PD1, the lower the FD potential becomes. The vertical signal line VSL becomes a potential corresponding to the FD potential.
[0073] The illuminance determination unit 23 determines the illuminance based on the potential of the vertical signal line VSL between times t1 and t2. That is, the illuminance determination unit 23 determines the illuminance based on the charge overflowing from the first photodiode PD1. The higher the illuminance, the more charge overflows from the first photodiode PD1, and the lower the FD potential and the potential of the vertical signal line VSL become. The illuminance determination unit 23 determines, for example, whether the illuminance is high or low based on the potential of the vertical signal line VSL. In this way, before the charge transfer from the photoelectric conversion element 11 to the floating diffusion FD via the transfer transistor 12 due to photoelectric conversion is started, the illuminance determination unit 23 determines the illuminance based on the charge leaking from the photoelectric conversion element 11 to the floating diffusion FD.
[0074] The DAC 8 keeps the signal level of the reference signal Ramp low between times t1 and t2, raises it to a high level potential at time t2, and then gradually lowers the signal level of the reference signal Ramp. Between times t2 and t3, the conversion efficiency switching transistor 19 is on, so that the noise potential is read out at a low conversion efficiency.
[0075] At time t3, the conversion efficiency switching transistor 19 is turned off. The DAC 8 raises the signal level of the reference signal Ramp to a high-level potential at time t3, and then gradually lowers the signal level of the reference signal Ramp. Between times t3 and t4, the noise potential is read out with high conversion efficiency.
[0076] Just before time t4, the first transfer transistor 12a is turned on. At time t4, the reset potential switch 22 sets the vertical signal line VSL to a reset potential for high illuminance, regardless of the illuminance. Between times t4 and t5, the signal potential is read out with high conversion efficiency.
[0077] At time t5, the reset potential switch 22 sets the reset potential of the vertical signal line VSL based on the illuminance determination result made by the illuminance determination unit 23 between times t1 and t2. For example, if the illuminance determination unit 23 determines that the illuminance is high, the reset potential switch 22 sets the vertical signal line VSL to a reset potential for high illuminance, and if the illuminance determination unit 23 determines that the illuminance is low, the reset potential switch 22 sets the reset potential to a higher level when the illuminance determination unit 23 determines that the illuminance is low than when the illuminance determination unit 23 determines that the illuminance is high. As shown in FIG. 6 , if the illuminance determination unit 23 determines that the illuminance is low, the reset potential switch 22 sets the potential level of the reset potential to a higher level than when the illuminance determination unit 23 determines that the illuminance is high.
[0078] Furthermore, after time t5, the conversion efficiency switching transistor 19 is turned on. Between times t5 and t6 and between times t6 and t7, the signal potential is read out at low conversion efficiency. The DAC 8 raises the reference signal Ramp to a high-level potential at time t5, and then gradually lowers it until time t6. Similarly, the DAC 8 raises the reference signal Ramp to a high-level potential at time t6, and then gradually lowers it until time t7.
[0079] At time t7, the reset transistor 13 is temporarily turned on, causing the charge stored in the floating diffusion FD to be discharged to the power supply voltage VDD node via the reset transistor 13. Between times t7 and t8, the noise potential is read out.
[0080] At time t8, the reset transistor 13 is temporarily turned on. Also, a short time after time t8, the second transfer transistor 12b is turned on. As a result, a charge corresponding to the amount of photoelectric conversion by the second photodiode PD2 is accumulated in the floating diffusion FD. Between times t8 and t9, the signal potential photoelectrically converted by the second photodiode PD2 is read out.
[0081] At time t9, the reset transistor 13 is temporarily turned on. As a result, the charge accumulated in the floating diffusion FD is discharged to the power supply voltage VDD node via the reset transistor 13. Between times t9 and t10, the noise potential of the second photodiode PD2 is read out.
[0082] During high illuminance, the counting operation of the counter provided downstream of the comparator 27 of the column signal processing circuit 5 is stopped between times t2 and t6. During high illuminance, the counter counting operation is performed after time t6, thereby generating digital signals of the noise potential and the signal potential. During low illuminance, the counter counting operation of the column signal processing circuit 5 is stopped between times t6 and t10. During low illuminance, the counter counting operation is performed between times t2 and t6, thereby generating digital signals of the noise potential and the signal potential. As shown in the timing diagram of FIG. 6 , the reset potential switch 22 according to the second embodiment determines the illuminance using the illuminance determination unit 23, then sets a reset potential corresponding to the noise potential to the vertical signal line VSL, thereby reading out the noise potential. Thereafter, the reset potential switch 22 sequentially sets a reset potential corresponding to the illuminance determined by the illuminance determination unit 23 to the vertical signal line VSL for each of the multiple photoelectric conversion elements 11, and reads out the signal potential.
[0083] 6 , if the illuminance determination unit 23 determines that the illuminance is high or if the illuminance determination unit 23 does not perform an illuminance determination, the reset potential switch 22 turns on the switch 26 connected to the high-illuminance voltage source 25 at times t4 and t5 to set the high-illuminance reset potential on the vertical signal line VSL. On the other hand, if the illuminance determination unit 23 determines that the illuminance is low between times t1 and t2, the reset potential switch 22 sets the high-illuminance reset potential on the vertical signal line VSL at time t4 and sets the low-illuminance reset potential on the vertical signal line VSL at time t5. Therefore, from time t5 onwards, the amount of potential fluctuation on the vertical signal line VSL is suppressed, shortening the settling time of the vertical signal line VSL and reducing the current flowing through the vertical signal line VSL, thereby achieving power savings.
[0084] Third Embodiment A third embodiment is characterized in that the reference potential of the vertical signal line VSL for determining the illuminance is generated by a reference signal generating circuit.
[0085] FIG. 7 is a circuit diagram showing a main part of an image pickup device 1 according to a third embodiment. The image pickup device 1 according to the third embodiment includes a reference signal generation circuit 30 added to the circuit configuration of FIG. 3 . The reference signal generation circuit 30 generates a reference signal for setting the vertical signal line VSL to a reference potential. The reference signal generation circuit 30 includes two transistors 31 and 32 cascode-connected between a power supply voltage VDD node and the vertical signal line VSL. These transistors 31 and 32 are, for example, NMOS transistors. These transistors 31 and 32 output pixel signals corresponding to the potential of floating diffusions FD of dummy pixels (not shown) to the vertical signal line VSL. The dummy pixels are light-shielded pixels that can output pixel signals with stable signal levels. Alternatively, the gate voltages of the two transistors 31 and 32 may be externally controlled.
[0086] The reference signal generation circuit 30 is a source follower circuit. The current flowing through the two transistors 31 and 32 in the reference signal generation circuit 30 flows to the capacitor 21 via the vertical signal line VSL. As a result, the vertical signal line VSL has a potential corresponding to the charge held in the capacitor 21. In this way, the reference signal generation circuit 30 constitutes a dynamic source follower circuit in order to hold, in the capacitor 21 connected to the vertical signal line VSL, a charge corresponding to the current flowing through the two transistors 31 and 32.
[0087] A charge corresponding to the reference signal generated by the reference signal generation circuit 30 is held in the capacitor 21, and the vertical signal line VSL is set to the reference potential. After the reference signal generation circuit 30 sets the vertical signal line VSL to the reference potential, the illuminance determination unit 23 determines the illuminance based on the amount of potential fluctuation from the reference potential. Thereafter, the reset potential switch 22 sets a reset potential for high illuminance or low illuminance to the vertical signal line VSL based on the illuminance determined by the illuminance determination unit 23.
[0088] 8A and 8B are waveform diagrams showing the reset potential set by the reset potential switch 22 to the vertical signal line VSL in accordance with the illuminance determined by the illuminance determination unit 23. Fig. 8A shows the waveform of the reset potential in the case of low illuminance, and Fig. 8B shows the waveform of the reset potential in the case of high illuminance. The illuminance determination unit 23 determines the illuminance, for example, at the timing when the readout of the noise potential is completed, and the reset potential switch 22 switches the reset potential of the vertical signal line VSL based on the determination result. Note that, as shown in the first embodiment, the illuminance may be determined before the readout of the noise potential.
[0089] As described above, in the third embodiment, the reference signal generating circuit 30 sets the vertical signal line VSL to the reference potential, and then the illuminance determination unit 23 determines the illuminance, which makes it less likely that the illuminance determination results will vary for each vertical signal line VSL.
[0090] Fourth Embodiment The fourth embodiment differs from the third embodiment in the circuit configuration of the reference signal generating circuit 30.
[0091] 9 is a circuit diagram showing a main part of an image pickup device 1 according to a fourth embodiment. The image pickup device 1 according to the fourth embodiment has a reference signal generation circuit 30 having a configuration different from that of the third embodiment. As shown in FIG. 9 , the reference signal generation circuit 30 according to the fourth embodiment has two transistors 31 and 32 cascode-connected between a power supply voltage VDD node and a vertical signal line VSL, as well as a switch 33 and a current source 34 connected in series between the vertical signal line VSL and a reference voltage (e.g., ground) node.
[0092] The switch 33 is turned on when the vertical signal line VSL is to be set to the reference potential. When the switch 33 is turned on, the current flowing through the two transistors 31 and 32 in the reference signal generating circuit 30 flows to the current source 34 via the switch 33. The current source 34 is a constant current source that supplies a constant current, and therefore the vertical signal line VSL can be set to a constant reference potential.
[0093] In the fourth embodiment, after the switch 33 is turned on and the vertical signal line VSL is set to a reference potential with a constant current load, the illuminance determination unit 23 determines the illuminance, and based on the determination result, the reset potential of the vertical signal line VSL is set and the signal potential is read out.
[0094] In the fourth embodiment, as in the third embodiment, the reference signal generating circuit 30 sets the vertical signal line VSL to a reference potential, and then the illuminance is determined by the illuminance determination unit 23, so that variations in the illuminance determination results for each vertical signal line VSL are less likely to occur.
[0095] Fifth Embodiment The fifth embodiment differs from the first to fourth embodiments in the configuration of the reset potential switch 22.
[0096] 10 is a circuit diagram showing a main part of an image pickup device 1 according to a fifth embodiment. The image pickup device 1 according to the fifth embodiment includes a reset potential switch 22 having a configuration different from those of the first to fourth embodiments. The reset potential switch 22 according to the fifth embodiment includes a plurality of source follower circuits 35, a switch (fourth switch) 36, and a current source 37, which are connected in series between a vertical signal line VSL and a reference potential (e.g., ground) node.
[0097] Each of the plurality of source follower circuits 35 has a transistor 38 and a switch (fifth switch) 39 connected in series between a power supply voltage VDD node and a vertical signal line VSL. The transistor 38 is, for example, an NMOS transistor. The drain of the transistor 38 is connected to the power supply voltage VDD node, and the source is connected to one end of the switch 39. The other end of the switch 39 is connected to the vertical signal line VSL. Potentials of different potential levels are input to the gates of the transistors 38.
[0098] 10 shows an example in which two source follower circuits 35 are connected in series, but three or more source follower circuits 35 may be connected in series and potentials of different potential levels may be input to the gates of the transistors 38 in each source follower circuit 35. Hereinafter, the two source follower circuits 35 shown in FIG. 10 will be referred to as the first source follower circuit 35 and the second source follower circuit 35. A reset potential for low illuminance is input to the gate of the transistor 38 in the first source follower circuit 35. A reset potential for high illuminance is input to the gate of the transistor 38 in the second source follower circuit 35.
[0099] The switch 36 is turned on when the vertical signal line VSL is set to the reference potential. When the switch 36 is turned on, a constant current flows from the vertical signal line VSL to the current source 37 via the switch 36.
[0100] After the vertical signal line VSL is set to the reference potential, the illuminance is determined by the illuminance determination unit 23. Thereafter, the reset potential switch 22 turns on one of the switches 39 based on the illuminance determined by the illuminance determination unit 23, and sets the vertical signal line VSL to a reset potential corresponding to the illuminance.
[0101] In the fifth embodiment, even if the potential of the connection node of the current source 37 that discharges a reset current fluctuates depending on the illuminance of a plurality of pixels 10 that are read out simultaneously, the reset potential of the vertical signal line VSL is set by the source follower circuit 35, and therefore the reset potential is not affected by the potential fluctuation of the connection node of the current source 37. Therefore, a countermeasure against streaking can be implemented.
[0102] Sixth Embodiment In the sixth embodiment, the reset potential switch 22 is provided with a single voltage source.
[0103] 11 is a circuit diagram showing a main part of an image pickup device 1 according to the sixth embodiment. The image pickup device 1 according to the sixth embodiment differs from the first to fifth embodiments in the configuration of a reset potential switch 22. The reset potential switch 22 according to the sixth embodiment has a single voltage source 41 and a plurality of reset potential setting circuits 24 connected in parallel between a vertical signal line VSL and a voltage source 25.
[0104] Each of the plurality of reset potential setting circuits 24 has a switch 26 and a potential setting unit 42. The switch 26 switches whether or not to select the corresponding reset potential setting circuit 24. The potential setting units 42 each have a different number of serially connected diodes or diode-connected transistors 43, or connect the corresponding switch 26 to a voltage source 41.
[0105] The diode or diode-connected transistor 43 has a predetermined forward voltage (e.g., about 0.6 V) between the anode and cathode or between the drain and source. Therefore, by adjusting the number of diodes or diode-connected transistors 43 connected in series, it can be used as the voltage source 41 in FIG. 3.
[0106] 10, two diode-connected transistors 43 are connected in series to generate a reset potential for noise potential. Furthermore, one diode-connected transistor 43 is used to generate a reset potential for low illuminance. Furthermore, by not connecting the diode-connected transistor 43 to the switch 26, a reset potential for high illuminance is generated. The number of diode-connected transistors 43 connected in series is arbitrary.
[0107] According to the sixth embodiment, a single voltage source 41 can generate multiple reset potentials, so that the number of pads for applying voltage from an external voltage source 41 and the number of wirings connected to the pads can be reduced.
[0108] <Application to a Mobile Body> The technology according to the present disclosure (the present technology) can be applied to various products. For example, the technology according to the present disclosure may be realized as a device mounted on any type of mobile body, such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, personal mobility, an airplane, a drone, a ship, or a robot.
[0109] FIG. 12 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a mobile object control system to which the technology according to the present disclosure can be applied.
[0110] The vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001. In the example shown in Fig. 12, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside-vehicle information detection unit 12030, an inside-vehicle information detection unit 12040, and an integrated control unit 12050. Also shown as functional components of the integrated control unit 12050 are a microcomputer 12051, an audio / video output unit 12052, and an in-vehicle network I / F (Interface) 12053.
[0111] The drivetrain control unit 12010 controls the operation of devices related to the drivetrain of the vehicle in accordance with various programs. For example, the drivetrain control unit 12010 functions as a control device for a drive force generating device for generating a drive force of the vehicle, such as an internal combustion engine or a drive motor, a drive force transmission mechanism for transmitting the drive force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, and a braking device for generating a braking force of the vehicle.
[0112] The body system control unit 12020 controls the operation of various devices equipped in the vehicle body according to various programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window device, or various lamps such as headlamps, backup lamps, brake lamps, turn signals, and fog lamps. In this case, radio waves transmitted from a portable device that serves as a key or signals from various switches can be input to the body system control unit 12020. The body system control unit 12020 receives these radio waves or signals and controls the vehicle's door lock device, power window device, lamps, etc.
[0113] The outside-vehicle information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000. For example, an imaging unit 12031 is connected to the outside-vehicle information detection unit 12030. The outside-vehicle information detection unit 12030 causes the imaging unit 12031 to capture images outside the vehicle and receives the captured images. The outside-vehicle information detection unit 12030 may perform object detection processing or distance detection processing for people, cars, obstacles, signs, characters on the road surface, etc. based on the received images.
[0114] The imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal corresponding to the amount of light received. The imaging unit 12031 can output the electrical signal as an image or as distance measurement information. The light received by the imaging unit 12031 may be visible light or invisible light such as infrared light.
[0115] The in-vehicle information detection unit 12040 detects information inside the vehicle. For example, a driver state detection unit 12041 that detects the state of the driver is connected to the in-vehicle information detection unit 12040. The driver state detection unit 12041 includes, for example, a camera that captures an image of the driver, and the in-vehicle information detection unit 12040 may calculate the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041, or may determine whether the driver is dozing off.
[0116] The microcomputer 12051 can calculate control target values for the driving force generating device, steering mechanism, or braking device based on the information inside and outside the vehicle acquired by the outside-vehicle information detection unit 12030 or the inside-vehicle information detection unit 12040, and output control commands to the drive system control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing the functions of an ADAS (Advanced Driver Assistance System), including vehicle collision avoidance or impact mitigation, following driving based on the distance between vehicles, maintaining vehicle speed, vehicle collision warning, vehicle lane departure warning, etc.
[0117] In addition, the microcomputer 12051 can perform cooperative control for the purpose of autonomous driving, which allows the vehicle to travel autonomously without relying on driver operation, by controlling the driving force generating device, steering mechanism, braking device, etc. based on information about the surroundings of the vehicle obtained by the outside vehicle information detection unit 12030 or the inside vehicle information detection unit 12040.
[0118] Furthermore, the microcomputer 12051 can output a control command to the body system control unit 12030 based on the information outside the vehicle acquired by the outside information detection unit 12030. For example, the microcomputer 12051 can control the headlamps according to the position of a preceding vehicle or an oncoming vehicle detected by the outside information detection unit 12030, and perform cooperative control aimed at preventing glare, such as switching from high beams to low beams.
[0119] The audio / video output unit 12052 transmits at least one of audio and video output signals to an output device capable of visually or audibly notifying the passengers of the vehicle or the outside of the vehicle of information. In the example of Fig. 12, the output devices are exemplified by an audio speaker 12061, a display unit 12062, and an instrument panel 12063. The display unit 12062 may include, for example, at least one of an on-board display and a head-up display.
[0120] FIG. 13 is a diagram showing an example of the installation position of the imaging unit 12031.
[0121] In FIG. 13, the imaging unit 12031 includes imaging units 12101, 12102, 12103, 12104, and 12105.
[0122] The imaging units 12101, 12102, 12103, 12104, and 12105 are provided, for example, at positions such as the front nose, side mirrors, rear bumper, back door, and the top of the windshield inside the vehicle cabin of the vehicle 12100. The imaging unit 12101 provided on the front nose and the imaging unit 12105 provided on the top of the windshield inside the vehicle cabin mainly acquire images of the front of the vehicle 12100. The imaging units 12102 and 12103 provided on the side mirrors mainly acquire images of the sides of the vehicle 12100. The imaging unit 12104 provided on the rear bumper or back door mainly acquires images of the rear of the vehicle 12100. The imaging unit 12105 provided on the top of the windshield inside the vehicle cabin is mainly used to detect preceding vehicles, pedestrians, obstacles, traffic lights, traffic signs, lanes, etc.
[0123] 13 shows an example of the imaging ranges of the imaging units 12101 to 12104. Imaging range 12111 indicates the imaging range of the imaging unit 12101 provided on the front nose, imaging ranges 12112 and 12113 indicate the imaging ranges of the imaging units 12102 and 12103 provided on the side mirrors, respectively, and imaging range 12114 indicates the imaging range of the imaging unit 12104 provided on the rear bumper or back door. For example, by overlaying the image data captured by the imaging units 12101 to 12104, an overhead image of the vehicle 12100 viewed from above can be obtained.
[0124] At least one of the image capturing units 12101 to 12104 may have a function of acquiring distance information. For example, at least one of the image capturing units 12101 to 12104 may be a stereo camera made up of multiple image capturing elements, or may be an image capturing element having pixels for phase difference detection.
[0125] For example, based on the distance information obtained from the imaging units 12101 to 12104, the microcomputer 12051 can calculate the distance to each three-dimensional object within the imaging ranges 12111 to 12114 and the change in this distance over time (relative speed with respect to the vehicle 12100), thereby extracting as a preceding vehicle, in particular, the three-dimensional object that is the closest three-dimensional object on the path of the vehicle 12100 and traveling in approximately the same direction as the vehicle 12100 at a predetermined speed (e.g., 0 km / h or higher). Furthermore, the microcomputer 12051 can set a vehicle-to-vehicle distance to be maintained in advance in front of the preceding vehicle, and perform automatic braking control (including follow-up stop control), automatic acceleration control (including follow-up start control), etc. In this way, cooperative control can be performed for the purpose of autonomous driving, which allows the vehicle to travel autonomously without relying on driver operation.
[0126] For example, the microcomputer 12051 classifies and extracts three-dimensional object data regarding three-dimensional objects into two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects based on distance information obtained from the imaging units 12101 to 12104, and can use the data for automatic obstacle avoidance. For example, the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. The microcomputer 12051 then determines a collision risk that indicates the risk of collision with each obstacle, and when the collision risk is equal to or greater than a set value and a collision is possible, the microcomputer 12051 can provide driving assistance for collision avoidance by outputting an alarm to the driver via the audio speaker 12061 or the display unit 12062, or by performing forced deceleration or avoidance steering via the drive system control unit 12010.
[0127] At least one of the image capturing units 12101 to 12104 may be an infrared camera that detects infrared rays. For example, the microcomputer 12051 can recognize a pedestrian by determining whether a pedestrian is present in the images captured by the image capturing units 12101 to 12104. Such pedestrian recognition is performed, for example, by extracting feature points from the images captured by the image capturing units 12101 to 12104 as infrared cameras and performing pattern matching on a series of feature points that indicate the outline of an object to determine whether the object is a pedestrian. When the microcomputer 12051 determines that a pedestrian is present in the images captured by the image capturing units 12101 to 12104 and recognizes the pedestrian, the audio / image output unit 12052 controls the display unit 12062 to superimpose a rectangular outline on the recognized pedestrian for emphasis. The audio / image output unit 12052 may also control the display unit 12062 to display an icon or the like indicating the pedestrian at a desired position.
[0128] An example of a vehicle control system to which the technology according to the present disclosure can be applied has been described above. The technology according to the present disclosure can be applied to, for example, the imaging unit 12031 among the configurations described above. Specifically, the imaging device 1 according to each embodiment can be applied to the imaging unit 12031. By applying the technology according to the present disclosure to the imaging unit 12031, it is possible to obtain a captured image that is easier to see, thereby reducing driver fatigue.
[0129] The present technology can be configured as follows:
[0130] (1) An imaging device comprising: a plurality of pixels arranged in one direction, each having a photoelectric conversion element; signal lines transmitting a plurality of pixel signals photoelectrically converted by the plurality of pixels; an illuminance determination unit determining an illuminance of light incident on the plurality of pixels; and a reset potential switch that switches a reset potential for initializing a potential of the signal lines based on the illuminance determined by the illuminance determination unit. (2) The imaging device described in (1), in which the illuminance determination unit determines illuminance in at least two stages. (3) The imaging device described in (1) or (2), in which the illuminance determination unit determines high illuminance or low illuminance, and in which the reset potential switch sets the reset potential higher when the illuminance is determined to be low than when the illuminance is determined to be high. (4) The imaging device described in (3), in which the reset potential switch sets the reset potential higher when the signal line is at a noise potential than the reset potential when the illuminance determination unit determines the illuminance to be low. (5) The imaging device according to any one of (1) to (4), comprising: a pixel array unit having the plurality of pixels arranged in a first direction and a second direction; and a plurality of the signal lines, each extending in the second direction and arranged in the first direction, transmitting two or more pixel signals photoelectrically converted by two or more of the pixels arranged in the second direction, wherein the illuminance determination unit and the reset potential switch are provided for each of the plurality of signal lines. (6) The imaging device according to any one of (1) to (5), wherein the reset potential switch selects one as a reset potential from a plurality of input potentials having different potential levels. (7) The imaging device according to (6), wherein the plurality of input potentials include at least three types of input potentials for setting a noise potential, a low illuminance reset potential, or a high illuminance reset potential to the signal lines. (8) The imaging device described in any one of (1) to (7), wherein each of the plurality of pixels has a transfer transistor and a floating diffusion, and the illuminance determination unit determines the illuminance based on charges leaking from the photoelectric conversion element to the floating diffusion before starting charge transfer from the photoelectric conversion element to the floating diffusion by photoelectric conversion via the transfer transistor.(9) The imaging device according to any one of (1) to (7), wherein the illuminance determination unit determines illuminance based on a signal potential of the pixel signal corresponding to an amount of light incident on the plurality of pixels. (10) The imaging device according to (9), wherein the plurality of pixels are capable of switching photoelectric conversion efficiency between at least two stages, and the illuminance determination unit determines illuminance based on a signal potential of the pixel signal in a state where the photoelectric conversion efficiency is maximum. (11) The imaging device according to any one of (1) to (10), further comprising: a signal processing unit that performs signal processing including generating a digital signal corresponding to the potential of the signal line based on a result of comparing the potential of the signal line with a reference signal, and wherein the reset potential switch sets the signal line to the reset potential corresponding to the noise potential when the signal line is at a noise potential, and then sets the signal line to the reset potential corresponding to the illuminance determined by the illuminance determination unit. (12) The imaging device according to any one of (1) to (10), wherein each of the plurality of pixels has a plurality of the photoelectric conversion elements having different sensitivities, and the reset potential switch sets the reset potential corresponding to a noise potential to the signal line after the illuminance determination unit determines the illuminance, thereby reading out the noise potential, and then sets the reset potential corresponding to the illuminance determined by the illuminance determination unit to the signal line for each of the plurality of photoelectric conversion elements in turn, thereby reading out the signal potential. (13) The imaging device according to any one of (1) to (12), further comprising: a reference signal generation circuit that generates a reference signal for setting the signal line to a reference potential, and the illuminance determination unit determines the illuminance based on a potential difference between the potential of the signal line and the reference potential. (14) The imaging device according to any one of (1) to (12), further comprising: a constant current source that flows a constant current through the signal line; and a first switch that connects the constant current source to the signal line only when the signal line is to be set to the reference potential.(15) The imaging device according to any one of (1) to (14), wherein the reset potential switch has a plurality of reset potential setting circuits connected in parallel between the signal line and a reference potential node, and each of the plurality of reset potential setting circuits has: a voltage source having a different potential level; and a second switch that switches whether to set the potential of the voltage source as the reset potential based on the illuminance determined by the illuminance determination unit. (16) The imaging device according to (15), wherein the illuminance determination unit determines whether the illuminance is high or low, and when the illuminance determination unit determines the illuminance is low, the plurality of reset potential setting circuits set the potential of the voltage source having a higher potential level as the reset potential than when the illuminance determination unit determines the illuminance is high. (17) The imaging device described in any one of (1) to (14), wherein the reset potential switch has a plurality of source follower circuits connected in series between the signal line and a reference potential node, a third switch, and a current source, and each of the plurality of source follower circuits has a transistor having a gate to which a potential of a different potential level is input, and a fourth switch that switches whether to set the signal line to a reset potential corresponding to the potential input to the gate of the transistor, and the third switch is turned on when setting the signal line to the reference potential and uses the current source to pass a constant current through the signal line, and after setting the signal line to the reference potential, any one of the plurality of fourth switches is turned on based on the illuminance determined by the illuminance determination unit to set the reset potential of the signal line. (18) The imaging device described in (17), wherein the illuminance determination unit determines whether the illuminance is high or low, and when the illuminance determination unit determines that the illuminance is low, the plurality of source follower circuits turn on the fourth switch connected to the transistor to which a higher potential is input at the gate than when the illuminance determination unit determines that the illuminance is high, to set a reset potential of the signal line.(19) The imaging device according to any one of (1) to (14), wherein the reset potential switch has a single voltage source connected to the signal line and a plurality of reset potential setting circuits connected in parallel between the signal line and the voltage source, each of the plurality of reset potential setting circuits has a third switch that switches whether to select the corresponding reset potential setting circuit, and a potential setting unit connected in series to the third switch, and the potential setting units have different numbers of diodes or diode-connected transistors connected in series, or connect the third switch to the voltage source. (20) The imaging device according to (19), wherein the illuminance determination unit determines whether the illuminance is high or low, and when the illuminance determination unit determines the illuminance is low, the plurality of reset potential setting circuits set the reset potential to a potential of a greater number of diodes or diode-connected transistors connected in series than when the illuminance determination unit determines the illuminance is high.
[0131] The aspects of the present disclosure are not limited to the individual embodiments described above, but include various modifications that may be conceived by those skilled in the art, and the effects of the present disclosure are not limited to the above-described contents. In other words, various additions, modifications, and partial deletions are possible within the scope of the conceptual idea and spirit of the present disclosure, which is derived from the contents defined in the claims and their equivalents.
[0132] 1 Imaging device, 2 Pixel array section, 3 Vertical scanning circuit, 4 Column readout circuit, 5 Column signal processing circuit, 6 Horizontal scanning circuit, 7 Control circuit, 8 DAC, 10 Pixel, 11 Photoelectric conversion element, 12 Transfer transistor, 12a First transfer transistor, 12b Second transfer transistor, 13 Accumulated charge is reset transistor, 13 Reset transistor, 14 Amplification transistor, 15 Selection transistor, 15 and selection transistor, 16 First substrate, 17 Second substrate, 18 Third substrate, 19 Conversion efficiency switching transistor, 21 Capacitor, 22 Reset potential switch, 23 Illuminance determination section, 24 Reset potential setting circuit, 25 Voltage source, 26 Switch, 27 Comparator, 28 Charge holding section, 30 Reference signal generation circuit, 31 Transistor, 32 Transistor, 33 Switch, 34 Current source, 35 Source follower circuit, 36 Switch, 37 Current source, 38 transistor, 39 switch, 41 voltage source, 41 single voltage source, 42 potential setting unit, 43 transistor
Claims
1. An imaging device comprising: a plurality of pixels arranged in one direction, each having a photoelectric conversion element; a signal line transmitting a plurality of pixel signals photoelectrically converted by the plurality of pixels; an illuminance determination unit determining the illuminance of light incident on the plurality of pixels; and a reset potential switch switching a reset potential for initializing the potential of the signal line based on the illuminance determined by the illuminance determination unit.
2. The imaging device according to claim 1, wherein the illuminance determination unit determines the illuminance in at least two stages.
3. The imaging device according to claim 1, wherein the illuminance determination unit determines whether the illuminance is high or low, and the reset potential switch sets the reset potential higher when the illuminance is determined to be low than when the illuminance is determined to be high.
4. The imaging device according to claim 3, wherein the reset potential switch sets the reset potential when the signal line is at a noise potential higher than the reset potential when the illuminance determination section has determined that the illuminance is low.
5. An imaging device as described in claim 1, comprising: a pixel array section having a plurality of pixels arranged in a first direction and a second direction; and a plurality of signal lines each extending in the second direction and arranged in the first direction, transmitting two or more pixel signals photoelectrically converted by two or more of the pixels arranged in the second direction, wherein the illuminance determination section and the reset potential switch are provided for each of the plurality of signal lines.
6. The imaging device according to claim 1, wherein the reset potential switch selects one of a plurality of input potentials having different potential levels as the reset potential.
7. The imaging device according to claim 6, wherein the plurality of input potentials include at least three types of input potentials for setting a noise potential, a low illuminance reset potential, or a high illuminance reset potential to the signal line.
8. The imaging device according to claim 1, wherein each of the plurality of pixels has a transfer transistor and a floating diffusion, and the illuminance determination unit determines the illuminance based on charges leaking from the photoelectric conversion element to the floating diffusion before starting charge transfer from the photoelectric conversion element to the floating diffusion via the transfer transistor by photoelectric conversion.
9. The imaging device according to claim 1, wherein the illuminance determining section determines the illuminance based on a signal potential of the pixel signal corresponding to the amount of light incident on the plurality of pixels.
10. The imaging device according to claim 9, wherein the plurality of pixels are capable of switching the photoelectric conversion efficiency between at least two stages, and the illuminance determination unit determines the illuminance based on the signal potential of the pixel signal when the photoelectric conversion efficiency is at maximum.
11. An imaging device as described in claim 1, further comprising a signal processing unit which performs signal processing including generating a digital signal corresponding to the potential of the signal line based on a result of comparing the potential of the signal line with a reference signal, and wherein the reset potential switch sets the reset potential corresponding to the noise potential on the signal line when the signal line is at a noise potential, and then sets the reset potential on the signal line corresponding to the illuminance determined by the illuminance determination unit.
12. The imaging device of claim 1, wherein each of the plurality of pixels has a plurality of the photoelectric conversion elements having different sensitivities, and the reset potential switch, after determining the illuminance in the illuminance determination unit, sets the reset potential corresponding to a noise potential to the signal line to read out the noise potential, and then sets the reset potential corresponding to the illuminance determined by the illuminance determination unit to the signal line for each of the plurality of photoelectric conversion elements in turn to read out the signal potential.
13. The imaging device according to claim 1, further comprising a reference signal generating circuit that generates a reference signal for setting the signal line to a reference potential, and wherein the illuminance determining unit determines the illuminance based on a potential difference between the potential of the signal line and the reference potential.
14. The imaging device according to claim 1, further comprising: a constant current source that causes a constant current to flow through the signal line; and a first switch that connects the constant current source to the signal line only when the signal line is set to a reference potential.
15. The imaging device of claim 1, wherein the reset potential switch has a plurality of reset potential setting circuits connected in parallel between the signal line and a reference potential node, and each of the plurality of reset potential setting circuits has a voltage source having a different potential level, and a second switch that switches whether or not to set the potential of the voltage source as the reset potential based on the illuminance determined by the illuminance determination unit.
16. The imaging device according to claim 15, wherein the illuminance determination unit determines whether the illuminance is high or low, and when the illuminance determination unit determines that the illuminance is low, the multiple reset potential setting circuits set the reset potential to a potential of the voltage source that is higher than the potential level when the illuminance determination unit determines that the illuminance is high.
17. The imaging device according to claim 1, wherein the reset potential switch has a plurality of source follower circuits connected in series between the signal line and a reference potential node, a third switch, and a current source, each of the plurality of source follower circuits having a transistor having a gate to which a potential of a different potential level is input, and a fourth switch for switching whether or not the signal line is set to a reset potential corresponding to the potential input to the gate of the transistor, the third switch is turned on when the signal line is set to the reference potential and uses the current source to pass a constant current through the signal line, and after the signal line is set to the reference potential, any one of the plurality of fourth switches is turned on based on the illuminance determined by the illuminance determination unit to set the reset potential of the signal line.
18. The imaging device described in claim 17, wherein the illuminance determination unit determines whether the illuminance is high or low, and when the illuminance determination unit determines that the illuminance is low, the multiple source follower circuits turn on the fourth switch connected to the transistor to whose gate a higher potential is input than when the illuminance determination unit determines that the illuminance is high, to set a reset potential of the signal line.
19. The imaging device of claim 1, wherein the reset potential switch has a single voltage source connected to the signal line and a plurality of reset potential setting circuits connected in parallel between the signal line and the voltage source, each of the plurality of reset potential setting circuits has a third switch for switching whether or not to select the corresponding reset potential setting circuit, and a potential setting section connected in series to the third switch, and the potential setting sections each have a different number of diodes or diode-connected transistors connected in series, or connect the third switch to the voltage source.
20. The imaging device of claim 19, wherein the illuminance determination unit determines whether the illuminance is high or low, and when the illuminance determination unit determines that the illuminance is low, the multiple reset potential setting circuits set as the reset potential a potential of a greater number of diodes or diode-connected transistors connected in series than when the illuminance determination unit determines that the illuminance is high.
Citation Information
Patent Citations
Solid-state image-pickup device and its drive method
JP2000004399A
Solid-state imaging device and imaging apparatus
JP2010192989A
Solid state image pickup device
JP2012060538A
Imaging apparatus and control method for the same, program, and storage medium
JP2021040270A