Power module, vehicle-mounted charging device, integrated controller, and vehicle

Abstract

A power module (100), a vehicle-mounted charging device (1000), an integrated controller (10000), and a vehicle (1). The power module (100) comprises: a bottom plate (10); a power module body, the power module body comprising a plurality of semiconductor devices constituting an OBC-DC circuit, and the power module body being arranged on a first side surface of the bottom plate (10); and a packaging housing (50), the packaging housing (50) encapsulating the power module body on the first side surface of the bottom plate (10).

Description

Power modules, on-board charging devices, integrated controllers and vehicles

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to Chinese patent application number 202322453137.X filed on September 6, 2023, entitled “Power module, on-board charging device, integrated controller and vehicle,” the entire contents of which are incorporated by reference into this application. Technical Field

[0003] The present application relates to the field of automobile charging and discharging technology, and in particular to a power module, an on-board charging device, an integrated controller, and a vehicle. Background Art

[0004] New energy vehicles usually use an OBC / DC system (on-board charging device) to charge the battery pack and power other low-voltage electrical appliances and low-voltage batteries on the vehicle. The OBC / DC system includes an OBC circuit (on-board charging circuit) and a DC circuit (direct current power supply circuit).

[0005] Existing OBC / DC systems primarily consist of a large number of individually packaged MOS transistors, resulting in a large system footprint and low space utilization. The large number of discrete components also complicates processing and assembly, leading to high costs. Furthermore, discrete MOS transistors can only be cooled using planar heat sinks, limiting their output capacity.

[0006] Summary of the Invention

[0007] The present application aims to solve at least one of the technical problems existing in the prior art. To this end, one purpose of the present application is to propose a power module that integrates and packages multiple semiconductor devices that constitute an OBC-DC circuit on a single baseboard. This power module has a more compact structure, a small size, and high reliability. This helps reduce the size and weight of the on-board charging device, facilitates the design and application of the OBC-DC circuit, and achieves a high degree of integration of the OBC-DC circuit. Furthermore, the integrated power module also facilitates centralized heat dissipation, reducing the complexity of the heat dissipation structure.

[0008] The present application further proposes an on-vehicle charging device, comprising the above-mentioned power module.

[0009] The present application further proposes an integrated controller, comprising the above-mentioned vehicle-mounted charging device.

[0010] The present application further proposes a vehicle comprising the above-mentioned on-board charging device or integrated controller.

[0011] The power module according to the present application includes: a base plate; a power module body, the power module body including a plurality of semiconductor devices constituting an OBC-DC circuit, the power module body being arranged on a first side surface of the base plate; and a packaging shell, the packaging shell packaging the power module body on the first side surface of the base plate.

[0012] The power module of this application integrates the multiple semiconductor devices that make up the OBC-DC circuit onto a single baseboard. Compared to the multiple independently packaged MOS transistors used in traditional circuits, the power module of this application is more compact, smaller, and more reliable. This helps reduce the size and weight of the on-board charging device, facilitates the design and application of the OBC-DC circuit, and achieves a high degree of integration. Furthermore, the power module of this application facilitates centralized heat dissipation, reducing the complexity of the heat dissipation structure.

[0013] According to the vehicle-mounted charging device of the present application, comprising: the power module described in any one of the above embodiments, the vehicle-mounted charging device has a better heat dissipation effect.

[0014] The integrated controller according to the present application includes: the vehicle-mounted charging device described in any one of the above embodiments, so the integrated controller has a higher degree of integration.

[0015] The vehicle according to the present application includes: the on-board charging device described in the above embodiments, or the integrated controller described in the above embodiments, so the vehicle is safer to use.

[0016] Additional aspects and advantages of the present application will be given in part in the description below, and in part will become obvious from the description below, or will be learned through practice of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] FIG1 is a schematic diagram of a power module according to an embodiment of the present application;

[0018] FIG2 is a top view of a first power unit according to an embodiment provided by the present application;

[0019] FIG3 is a side view of a first power unit according to an embodiment provided by the present application;

[0020] FIG4 is a perspective view of a power unit of a power module according to an embodiment provided by the present application;

[0021] FIG5 is a circuit diagram of a vehicle-mounted charging device according to an embodiment of the present application;

[0022] FIG6 is a perspective view of a vehicle-mounted charging device according to an embodiment of the present application;

[0023] FIG7 is a perspective view of a vehicle-mounted charging device according to an embodiment of the present application from another perspective;

[0024] FIG8 is a schematic structural diagram of a vehicle-mounted charging device according to an embodiment of the present application;

[0025] FIG9 is a schematic structural diagram of an integrated controller according to an embodiment of the present application;

[0026] FIG10 is a schematic diagram of a vehicle structure according to an embodiment provided by the present application;

[0027] FIG11 is a schematic diagram of a vehicle structure according to another embodiment provided by the present application.

[0028] Reference Signs Power module 100; on-board charging device 1000; integrated controller 10000; vehicle 1; chassis 10; first power unit 21; first substrate 211; first conductive layer 212; first H-bridge 213; second H-bridge 214; second power unit 22; second substrate 221; second conductive layer 222; third H-bridge 223; fourth H-bridge 224; third power unit 23; third substrate 231; third conductive layer 232; full bridge 233; capacitor connecting pin 24; upper bridge arm 25; lower bridge arm 26; first conductive portion 31; power terminal 311; second conductive portion 32; positive terminal HV+; third conductive portion 33; first portion 331; second portion 332; negative terminal HV−; fourth conductive portion 34; fifth conductive portion 35; signal terminal 351; Semiconductor device Q1; semiconductor device Q2; semiconductor device Q3; semiconductor device Q4; semiconductor device Q5; semiconductor device Q6; semiconductor device Q7; semiconductor device Q8; semiconductor device Q9; semiconductor device Q10; semiconductor device Q11; semiconductor device Q12; semiconductor device Q13; semiconductor device Q14; semiconductor device Q15; semiconductor device Q16; semiconductor device Q17; semiconductor device Q18; semiconductor device Q19; semiconductor device Q20; semiconductor device Q21; semiconductor device Q22; drain 41; power terminal 421; signal terminal 422; gate 43; package 50; PFC circuit 61; LLC primary circuit 62; LLC secondary circuit 63; DC primary circuit 71; DC secondary circuit 72; snubber capacitor 80; heat sink 90; Driving board 200; driving chip 300; inductor L1; inductor L2; inductor L3; inductor L4; transformer T1; transformer T2; capacitor C1; capacitor C2; capacitor C3. DETAILED DESCRIPTION

[0029] The following describes in detail embodiments of the present application. Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present application and are not to be construed as limiting the present application.

[0030] The power module 100 according to an embodiment of the present application will be described in detail below with reference to the accompanying drawings.

[0031] As shown in FIG. 1 to FIG. 7 , a power module 100 according to an embodiment of the present application includes: a base plate 10 , a plurality of power units, and a packaging case 50 .

[0032] In some embodiments, the power module body includes multiple semiconductor devices constituting an OBC-DC circuit. The power module body is disposed on the first side of the base plate 10 , and the packaging shell 50 packages multiple power units on the first side of the base plate 10 .

[0033] In other words, the power module 100 according to the embodiment of the present application is primarily composed of a base plate 10, a power module body, and a packaging shell 50. In some embodiments, the power module 100 can be used in an OBC-DC circuit. The OBC-DC circuit can be an integrated circuit combining an OBC circuit and a DC-DC circuit. The OBC (onboard charger) circuit is the charging circuit of an onboard charger and can be connected to an AC power source to charge the vehicle's high-voltage battery. The DC-DC circuit is a DC-to-DC converter circuit that can connect a high-voltage battery and a low-voltage battery to charge the low-voltage battery.

[0034] In some embodiments, the base plate 10 may have a first side surface and a second side surface disposed opposite each other. A power module body may be provided on the first side surface of the base plate 10. The power module body may include multiple semiconductor devices that can be used to form an OBC-DC circuit. It should be noted that the OBC-DC circuit may also include, but is not limited to, components such as capacitors, inductors, and transformers.

[0035] Alternatively, the semiconductor device may be a combination of one or more of a MOS transistor, a diode, an IGBT, and the like. It should be noted that the semiconductor device may be a controllable semiconductor or an uncontrollable semiconductor, without limitation herein. For example, the OBC circuit may include a PFC circuit 61 (power factor correction circuit), which may include a combination of a MOS transistor and a diode.

[0036] In addition, the packaging shell 50 can encapsulate the power module body and the first side of the base plate 10, so that the multiple semiconductor devices in the power module body are electrically connected to each other to form an independent power module 100. The encapsulated power module 100 can be provided with pins connected to the power module body to facilitate connecting the power module 100 to a corresponding circuit. Optionally, a potting compound can be poured into the packaging shell 50 to insulate the components in the encapsulated power module body from each other.

[0037] Thus, the power module 100 provided in this application integrates and packages the multiple semiconductor devices that comprise the OBC-DC circuit onto a single baseplate 10. Compared to the multiple independently packaged MOS transistors used in conventional circuits, the power module 100 of this embodiment is more compact, smaller, and more reliable. This helps reduce the size and weight of the on-board charging device 1000, facilitates the design and application of the OBC-DC circuit, and achieves a high degree of integration. Furthermore, the power module 100 of this embodiment facilitates centralized heat dissipation, reducing the complexity of the heat dissipation structure.

[0038] According to a specific embodiment of the present application, the power module body includes multiple power cells spaced apart from each other. Spacing the multiple power cells allows for mutual insulation between the multiple power cells. That is, the power cells are not electrically connected within the power module 100, ensuring that the power cells are independent of each other and do not interfere with each other, thereby improving the EMC performance of the power module 100.

[0039] Each power unit can realize a part of the functions in the OBC-DC circuit, and multiple power units can be integrated and packaged between the packaging shell 50 and the base plate 10.

[0040] It should be noted that the structures of the power units can be the same or different, which is not limited here. The operating voltage corresponding to each power unit can be set according to the actual operating voltage of the OBC-DC circuit.

[0041] In some other embodiments, a spacing groove is provided between two adjacent power units. By providing the spacing groove between adjacent power units, the adjacent power units can be spaced apart to achieve insulation between the adjacent power units, and the spacing groove has a simple structure and is easy to manufacture.

[0042] In some specific embodiments of the present application, there is one package housing 50 and it is an integrated structure. In other words, multiple power units are packaged by one package housing 50, which is beneficial to improving the integration of the power module 100 and reducing the volume of the power module 100.

[0043] It should be noted that the integrated structure of the packaging shell 50 can be an integrally formed structure or an integrated structure formed by a fixed connection method, which is not limited here. The fixed connection method includes but is not limited to welding, clamping, screwing and other connection methods.

[0044] According to one embodiment of the present application, each power unit includes a conductive layer and at least two semiconductor devices, and the semiconductor devices are electrically connected through the conductive layer.

[0045] In some embodiments, the conductive layer may be a metal layer having good conductive properties, for example, the conductive layer may be a copper layer. The conductive layer may be opposite to the first side surface of the base plate 10 .

[0046] Optionally, the conductive layer may include a plurality of semiconductor mounting portions, each of which may be provided with one or more semiconductor devices. Adjacent semiconductor mounting portions may be spaced apart to insulate each other. The semiconductor mounting portions may be used to mount semiconductor devices.

[0047] By isolating the plurality of semiconductor mounting parts from each other, it is possible to eliminate electrical connection between the semiconductor mounting parts, thereby achieving the goal of independent semiconductor devices on the semiconductor mounting parts without interfering with each other.

[0048] The conductive layer can electrically connect multiple semiconductor devices in each power unit. Using the conductive layer to connect semiconductor devices has the advantage of high reliability.

[0049] Optionally, the conductive layer can connect two of the multiple semiconductor devices to form a half-bridge, with each bridge arm comprising two semiconductor devices. When the power unit comprises two semiconductor devices, the conductive layer can connect the two semiconductor devices to form one bridge arm. When the power unit comprises four semiconductor devices, the four semiconductor devices can be divided into two groups, and the two semiconductor devices in each group can be electrically connected via the conductive layer to form one bridge arm, i.e., a total of two bridge arms can be formed.

[0050] According to some specific embodiments of the present application, each semiconductor device has a drain 41 electrically connected to the conductive layer on its side facing the conductive layer, and a source and a gate 43 on its side away from the conductive layer.

[0051] In some embodiments, the first side of each semiconductor device may face the conductive layer, and a drain 41 is provided on the first side of each semiconductor device. The drain 41 may be electrically connected to the conductive layer. For example, the drain 41 may be directly welded to the conductive layer.

[0052] The second side of each semiconductor device can be remote from the conductive layer, and each semiconductor device can be provided with a source electrode and a gate electrode 43 on the second side. The source electrode and gate electrode 43 can be electrically connected to the conductive layer via a wire bond. In other words, each semiconductor device can be connected to the conductive layer and the wire bond to form a portion of the OBC-DC circuit structure. Optionally, the wire bond can be a copper bonding wire, and the semiconductor device can be a Si-based wafer or a SiC-based wafer.

[0053] In addition, corresponding pins may be connected to the conductive layer, and a portion of the pins may extend out of the package shell 50 to lead out the source, drain 41 or gate 43 of the semiconductor device, thereby facilitating connection of the power module 100 to the OBC-DC circuit.

[0054] In this embodiment, the drain 41 is arranged on the side of the semiconductor device facing the conductive layer, and the source and gate 43 are arranged on the side of the semiconductor device away from the conductive layer. This facilitates the connection between the drive circuit in the on-board charging device 1000 and the gate 43 of the semiconductor device, thereby reducing the distance between the drive circuit and the gate 43, which is beneficial to the transmission of high-frequency switching signals in the drive circuit.

[0055] Optionally, the conductive layer may further include a plurality of pin mounting portions, which may be insulated from each other, and each pin mounting portion may be electrically connected to the semiconductor device via a metal binding wire. At least one pin may be connected to each pin mounting portion, and a portion of the pin may extend out of the package shell 50 to lead out the source, drain 41 or gate 43 of the semiconductor device, thereby facilitating connection of the power module 100 to the OBC-DC circuit.

[0056] In some other embodiments, the thickness and profile of the packaging shell 50 and the base plate 10 can be designed according to the requirements of the vehicle charging device 1000, the pins on the power module 100 can be adjusted according to safety regulations, voltage rating, circuit board layout and other requirements, the size of each semiconductor device can be selected according to the power level or overcurrent capacity of the vehicle charging device 1000, and the distance between adjacent semiconductor devices can also be adjusted according to actual regulations.

[0057] According to an embodiment of the present application, a protection element is connected to each semiconductor device.

[0058] In some embodiments, each power unit further includes a plurality of protection elements, and the plurality of protection elements are connected to the plurality of semiconductor devices in a one-to-one correspondence to protect the semiconductor devices.

[0059] For example, the protection element may be a diode, and specifically, a common example is a combination of an IGBT and a freewheeling diode.

[0060] According to some other embodiments of the present application, each power unit further includes a substrate, which is disposed between the corresponding conductive layer and the bottom plate 10 .

[0061] By providing a substrate between the bottom plate 10 and the conductive layer, insulation can be achieved between the conductive layer and the bottom plate 10. Furthermore, each power unit includes a corresponding substrate, which allows for mutual independence between the multiple power units and electrical insulation between the power units. Because each power unit can have a different operating voltage, isolating the power units via the corresponding substrates can prevent mutual interference between the multiple power units and improve the EMC characteristics of the power module 100.

[0062] According to one embodiment of the present application, the plurality of power units include a first power unit 21 , a second power unit 22 , and a third power unit 23 that are spaced apart.

[0063] In some embodiments, the number of power units in the power module 100 may be three, namely a first power unit 21 , a second power unit 22 and a third power unit 23 . The three power units may be spaced apart so as to be electrically insulated from each other.

[0064] In some specific embodiments, the substrate in the first power unit 21 may be a first substrate 211 , the conductive layer in the first power unit 21 may be a first conductive layer 212 , and the semiconductor devices in the first power unit 21 may be electrically connected through the first conductive layer 212 .

[0065] The substrate of the second power unit 22 may be a second substrate 221 , the conductive layer in the second power unit 22 may be a second conductive layer 222 , and the semiconductor devices in the second power unit 22 may be electrically connected via the second conductive layer 222 .

[0066] The substrate of the third power unit 23 may be a third substrate 231 , the conductive layer in the second power unit 22 may be a third conductive layer 232 , and the semiconductor devices in the third power unit 23 may be electrically connected through the third conductive layer 232 .

[0067] In addition, the first substrate 211, the second substrate 221, and the third substrate 231 can be spaced apart from each other. By providing three spaced-apart substrates, the three power units can be isolated from each other, thereby preventing interference between the substrates and improving the reliability of the power module 100. Optionally, all three substrates can be ceramic insulating plates to insulate the conductive layer from the base plate 10.

[0068] In this embodiment, the multiple semiconductor devices in the OBC-DC circuit are respectively arranged in three groups of power units, and the three power units are insulated from each other. On the one hand, this can facilitate the wiring design of the circuit in the power module 100. On the other hand, it can also reduce the interference between the power units and improve the EMC performance of the power module 100. At the same time, it also facilitates the processing and manufacturing of the power module 100 and improves production efficiency.

[0069] In some embodiments, the operating voltage of the first power unit 21 can be 220V, and the operating voltage of the second power unit 22 can correspond to the voltage across the battery pack in the vehicle. Therefore, the operating voltage of the second power unit 22 can be 480V~720V, and the operating voltage of the third power unit 23 can be 12V.

[0070] Optionally, a welding process may be used between each power unit and the corresponding conductive layer substrate to improve the reliability of the power module 100 .

[0071] In some optional embodiments of the present application, as shown in Figure 5, the OBC-DC circuit includes an OBC circuit and a DCDC circuit, the OBC circuit includes a PFC circuit 61 and an LLC circuit, the LLC circuit includes an LLC primary circuit 62 and an LLC secondary circuit 63, and the DCDC circuit includes a DC primary circuit 71 and a DC secondary circuit 72.

[0072] The first power unit includes semiconductor devices forming the PFC circuit 61 and semiconductor devices forming the LLC primary circuit 62, the second power unit 22 includes semiconductor devices forming the LLC secondary circuit 63 and semiconductor devices forming the DC primary circuit 71, and the third power unit 23 includes semiconductor devices forming the DC secondary circuit 72.

[0073] In some embodiments, the OBC circuit may be primarily composed of a PFC circuit 61, an LLC primary circuit 62, and an LLC secondary circuit 63. The PFC circuit 61 is a power factor correction circuit, the LLC circuit is a resonant circuit, the LLC primary circuit 62 is a resonant primary circuit, and the LLC secondary circuit 63 is a resonant secondary circuit.

[0074] The first end of the PFC circuit 61 can be connected to the AC power supply AC-IN, the first end of the LLC primary circuit 62 can be connected to the second end of the PFC circuit 61, the second end of the LLC primary circuit 62 can be connected to the primary side of the transformer T1, the first end of the LLC secondary circuit 63 can be connected to the secondary side of the transformer T1, and the positive pole HV+ and negative pole HV- of the LLC secondary circuit 63 can be connected to the positive and negative poles of the battery pack respectively.

[0075] In some embodiments, the AC power source may be an AC power source external to the vehicle, such as a charging station, and the OBC circuit may be used to charge the battery pack using the external AC power source.

[0076] The DCDC circuit can be mainly composed of a DC primary circuit 71 and a DC secondary circuit 72. The DCDC circuit is a DC to DC circuit, the DC primary circuit 71 is a primary circuit for DC to DC conversion, and the DC secondary circuit 72 is a secondary circuit for DC to DC conversion.

[0077] The first end of the DC primary circuit 71 can be connected to the second end of the LLC secondary circuit 63, the second end of the DC primary circuit 71 can be connected to the primary side of the transformer T2, the first end of the DC secondary circuit 72 can be connected to the secondary side of the transformer T2, and the second end of the DC secondary circuit 72 can be connected to low-voltage electrical appliances and / or low-voltage batteries. The DCDC circuit can be used to supply power to other low-voltage electrical appliances on the vehicle side and to charge the low-voltage battery.

[0078] As shown in Figure 1, the semiconductor devices in the first power cell can be used to form a PFC circuit 61 and an LLC primary circuit 62, the semiconductor devices in the second power cell 22 can be used to form an LLC secondary circuit 63 and a DC primary circuit 71, and the semiconductor devices in the third power cell 23 can be used to form a DC secondary circuit 72. Thus, the circuit connected to the primary side of transformer T1 can be integrated on the first conductive layer 212, the circuit connected to the secondary side of transformer T1 can be integrated on the second conductive layer 222, and the circuit connected to the secondary side of T2 can be integrated on the third conductive layer 232, which facilitates electrical insulation between the primary and secondary circuits of each transformer.

[0079] In some other embodiments of the present application, not shown in the figure, the OBC-DC circuit includes a PFC circuit, an LLC circuit and a DC secondary circuit, the LLC circuit includes an LLC primary circuit and an LLC secondary circuit, the LLC circuit constitutes a first voltage conversion circuit, and one of the LLC primary circuit and the LLC secondary circuit and the DC secondary circuit constitute a second voltage conversion circuit.

[0080] The first power unit includes semiconductor devices forming a PFC circuit, the second power unit 22 includes semiconductor devices forming an LLC circuit, and the third power unit 23 includes semiconductor devices forming a DC secondary circuit.

[0081] In some embodiments, the OBC-DC circuit may include an OBC circuit and a DC circuit, wherein the OBC circuit includes a PFC circuit and an LLC circuit, the secondary side of the LLC circuit is used to connect to the power battery (high-voltage battery), and the primary side of the LLC circuit is used to connect to the PFC circuit.

[0082] The DC circuit is used to charge the low-voltage battery. This DC circuit is only the secondary side of the voltage conversion circuit. The primary side of the voltage conversion circuit can be the primary side of the LLC circuit or the secondary side of the LLC circuit. That is to say, the primary side circuit of the LLC circuit and the DC circuit together constitute the DCDC circuit, or the secondary side circuit of the LLC circuit and the DC circuit together constitute the DCDC circuit.

[0083] In some embodiments, the DCDC circuit can convert the current output by the battery pack into a low-voltage current of 12V.

[0084] In some other embodiments, the DCDC circuit can convert 220V AC power into 12V low-voltage power to charge the low-voltage battery.

[0085] In some specific embodiments, the first power unit 21 and / or the second power unit 22 are provided with at least one pair of capacitor connection pins 24. The first power unit 21 and the second power unit 21 each include at least two bridge arms, each bridge arm including an upper bridge arm 25 and a lower bridge arm 26, and each pair of capacitor connection pins 24 is respectively connected to the upper bridge arm 25 and the lower bridge arm 26.

[0086] In some embodiments, the following situations may be included but are not limited to:

[0087] Case 1: The first power unit 21 is provided with one or more pairs of capacitor connection pins 24;

[0088] In case 2, the second power unit 22 is provided with one or more pairs of capacitor connection pins 24;

[0089] In case three, the first power unit 21 and the second power unit 22 are respectively provided with one or more pairs of capacitor connecting pins 24 .

[0090] The number of capacitor connection pins 24 may correspond to the number of bridge arms in the power unit. One of each pair of capacitor connection pins 24 may be connected to an upper bridge arm 25 in the corresponding bridge arm. One of each pair of capacitor connection pins 24 may be connected to a lower bridge arm 26 in the corresponding bridge arm.

[0091] Capacitor connection pin 24 can be used to connect an absorption capacitor 80. In other words, absorption capacitor 80 can be connected between the upper bridge arm 25 and the lower bridge arm 26 of the power unit. This creates a stray inductance loop between the upper bridge arm 25 and the lower bridge arm 26 to suppress bus voltage fluctuations. This stray inductance loop also minimizes the current path between the positive and negative busbars, which helps reduce stray inductance, effectively suppresses the turn-off voltage spike of the switch tube, and improves the anti-interference capability of the power module 100.

[0092] In some specific embodiments of the present application, the first power unit 21 , the second power unit 22 and the third power unit 23 are arranged in sequence and spaced apart along the first direction, which is beneficial to simplifying the structure of the power module 100 and reducing the volume of the power module 100 .

[0093] In some embodiments, the first substrate 211 , the second substrate 221 , and the third substrate 231 may be arranged in sequence along the first direction so that the corresponding first power unit 21 , the second power unit 22 , and the third power unit 23 are arranged in sequence along the first direction.

[0094] It should be noted that the gap between each substrate can be designed according to the voltage rating of the entire circuit. For example, when the voltage rating is 25kV, the gap between adjacent substrates can be 1mm.

[0095] According to some optional embodiments of the present application, the first power unit 21 includes four bridge arms, two of the four bridge arms form a first H-bridge 213, and the other two of the four bridge arms form a second H-bridge 214, and the first H-bridge 213 and the second H-bridge 214 are arranged along the first direction.

[0096] In some embodiments, the first power unit 21 can be mainly composed of four bridge arms, each bridge arm can be connected by two semiconductor devices, and the four bridge arms in the first power unit 21 can be divided into two groups of bridge arms, each group of bridge arms includes two bridge arms, one group of bridge arms can form a first H-bridge 213, and the other group of bridge arms can form a second H-bridge 214.

[0097] That is, the first power unit 21 may include at least eight semiconductor devices, four of which may be electrically connected by wires through corresponding conductive layers to form a first H-bridge 213 to constitute a part of the PFC circuit 61, and the other four semiconductor devices may be electrically connected by wires through corresponding conductive layers to form a second H-bridge 214 to constitute a part of the LLC primary circuit 62, and the first H-bridge 213 and the second H-bridge 214 may also be electrically connected through a conductive layer.

[0098] In addition, the first H-bridge 213 and the second H-bridge 214 can be arranged along the first direction, which is beneficial to reducing the space occupied by the first power unit 21 and facilitating the arrangement of each power unit in the power module 100, thereby reducing the volume of the power module 100.

[0099] According to some other embodiments of the present application, the second power unit 22 includes four bridge arms, two of the four bridge arms form a third H-bridge 223, and the other two of the four bridge arms form a fourth H-bridge 224, and the third H-bridge 223 and the fourth H-bridge 224 are arranged along the first direction.

[0100] In some embodiments, the second power unit 22 can be mainly composed of four bridge arms, each bridge arm can be connected by two semiconductor devices, and the four bridge arms in the second power unit 22 can be divided into two groups of bridge arms, each group of bridge arms includes two bridge arms, one group of bridge arms can form a third H-bridge 223, and the other group of bridge arms can form a fourth H-bridge 224.

[0101] That is to say, the second power unit 22 may include at least eight semiconductor devices, four of which can be electrically connected by wires through corresponding conductive layers to form a third H-bridge 223 to constitute a part of the LLC secondary circuit 63, and the other four semiconductor devices can be electrically connected by wires through corresponding conductive layers to form a fourth H-bridge 224 to constitute a part of the DC primary circuit 71, and the third H-bridge 223 and the fourth H-bridge 224 can also be electrically connected through the conductive layer.

[0102] In addition, the third H-bridge 223 and the fourth H-bridge 224 can be arranged along the first direction, which is beneficial to reducing the space occupied by the second power unit 22 and facilitating the arrangement of each power unit in the power module 100, thereby reducing the volume of the power module 100.

[0103] In some optional embodiments, each bridge arm in the first power unit 21 and the second power unit 22 can be arranged along the first direction, and the two semiconductor devices in each bridge arm in the first power unit 21 and the second power unit 22 can be arranged along the second direction, so as to facilitate the connection of each semiconductor device nearby and reduce the space occupied by the corresponding first power unit 21 and the second power unit 22.

[0104] In some specific embodiments of the present application, the first conductive layer 212 and the second conductive layer 222 respectively include a plurality of first conductive parts 31, a second conductive part 32, a third conductive part 33, a plurality of fourth conductive parts 34 and a plurality of fifth conductive parts 35, which are arranged on a side of the first substrate 211 and / or the second substrate 221 away from the bottom plate 10 and spaced apart from each other. The plurality of first conductive parts 31 are arranged spaced apart along the first direction, and each first conductive part 31 is provided with a power terminal 311. The second conductive part 32 extends along the first direction. The third conductive part 33 includes a first part 331 extending along the first direction and three second parts 332 extending along the second direction. One end of the second part 332 is connected to the first end of the first part 331 close to the first conductive part 31, and the second end of the second part 332 extends toward the second conductive part 32. The fourth conductive parts 34 are arranged spaced apart along the first direction, and two fourth conductive parts 34 and a plurality of fifth conductive parts 35 are provided between two adjacent second parts 332.

[0105] In some embodiments, the conductive layer on the first substrate 211 and / or the second substrate 221 may be mainly composed of a first conductive portion 31 , a third conductive portion 33 , a second conductive portion 32 , a plurality of fourth conductive portions 34 and a plurality of fifth conductive portions 35 .

[0106] In some embodiments, a power terminal 311 may be provided on the first conductive part 31, semiconductor devices may be provided on the second conductive part 32 and the fourth conductive part 34, and a signal terminal 351 may be provided on the fifth conductive part 35. The source on the semiconductor device may include a power terminal 421 and a signal terminal 422. The power terminal 421 may be connected to the power terminal 311 on the first conductive part 31 through a binding wire, and the signal terminal 422 may be connected to the signal terminal 351 through a binding wire.

[0107] In addition, the first conductive part 31, the second conductive part 32, the third conductive part 33, the multiple fourth conductive parts 34 and the multiple fifth conductive parts 35 can be spaced apart from each other on the corresponding substrate so as to be insulated from each other. By setting the first conductive part 31, the third conductive part 33, the second conductive part 32, the multiple fourth conductive parts 34 and the multiple fifth conductive parts 35, in combination with the binding wires, the electrical connection of the semiconductor devices in the PFC circuit 61, the LLC primary circuit 62, the LLC secondary circuit 63 and the DC primary circuit 71 can be achieved.

[0108] Furthermore, the first conductive portion 31 and the second conductive portion 32 can be rectangular, the third conductive portion 33 can be in the shape of a mountain, and the fourth conductive portion 34 can be in the shape of an L. The plurality of first conductive portions 31, second conductive portions 32, and third conductive portions 33 can be spaced apart along the second direction, and the fourth conductive portion 34 and the fifth conductive portion 35 can be disposed between the first portion 331 of the third conductive portion 33 and the second conductive portion 32. This allows the power terminal 311 and the signal terminal 351 to be separated, preventing the power terminal 311 and the signal terminal 351 from intersecting. This facilitates the connection of the signal terminal 351 with external wires, reduces EMC interference, shortens the power circuit routing, and reduces stray inductance.

[0109] According to some optional embodiments of the present application, the first power unit 21 includes a semiconductor device Q1, a semiconductor device Q2, a semiconductor device Q3, a semiconductor device Q4, a semiconductor device Q5, a semiconductor device Q6, a semiconductor device Q7, and a semiconductor device Q8. The power terminals 421 of the sources of the semiconductor devices Q1, Q3, Q5, and Q7 are electrically connected to the plurality of first conductive portions 31 in a one-to-one correspondence. The power terminals 421 of the sources of the semiconductor devices Q2, Q4, Q6, and Q8 are electrically connected to the third conductive portion 33. The semiconductor devices Q1, Q3, and Q7 are electrically connected to the third conductive portion 33. 5. The drains 41 of the semiconductor device Q7 are respectively electrically connected to the second conductive parts 32, and the semiconductor devices Q1, Q3, Q5, and Q7 are arranged spaced apart along the first direction. The drains 41 of the semiconductor devices Q2, Q4, Q6, and Q8 are respectively electrically connected to the plurality of fourth conductive parts 34 in a one-to-one correspondence, and the signal terminals 422 and gates 43 of the sources of the semiconductor devices Q1, Q2, Q3, Q4, Q5, Q6, Q7, and Q8 are electrically connected to the plurality of fifth conductive parts 35 in a one-to-one correspondence.

[0110] In some embodiments, semiconductor device Q1 and semiconductor device Q2 can be connected to form a bridge arm, semiconductor device Q3 and semiconductor device Q4 can also be connected to form a bridge arm, and semiconductor device Q1, semiconductor device Q2, semiconductor device Q3, and semiconductor device Q4 can be connected to form a first H-bridge 213 to constitute a part of the PFC circuit 61.

[0111] Semiconductor device Q5 and semiconductor device Q6 can be connected to form a bridge arm, semiconductor device Q7 and semiconductor device Q8 can also be connected to form a bridge arm, and semiconductor device Q5, semiconductor device Q6, semiconductor device Q7, and semiconductor device Q8 can be connected to form a second H-bridge 214 to constitute part of the LLC primary circuit 62.

[0112] There are four first conductive portions 31 on the first substrate 211, each of which may be provided with a power terminal 311, namely terminal A, terminal B, terminal C, and terminal D. Semiconductor devices Q1, Q3, Q5, and Q7 may be provided on the second conductive portion 32, and the drains 41 of these devices Q1, Q3, Q5, and Q7 are all connected to the second conductive portion 32. Semiconductor device Q1 is connected to the first conductive portion 31 where terminal A is located via a wire tie, semiconductor device Q3 is connected to the first conductive portion 31 where terminal B is located via a wire tie, semiconductor device Q5 is connected to the first conductive portion 31 where terminal C is located via a wire tie, and semiconductor device Q7 is connected to the first conductive portion 31 where terminal D is located via a wire tie, thereby leading the power terminals 421 of the sources of semiconductor devices Q1, Q3, Q5, and Q7 to the corresponding power terminals 311.

[0113] It should be noted that the operating voltage of the first power unit 21 may be the voltage between the terminal A and the terminal B.

[0114] There are four fourth conductive portions 34 on the first substrate 211. Semiconductor devices Q2, Q4, Q6, and Q8 are disposed one-to-one on the four fourth conductive portions 34. The drains 41 of semiconductor devices Q2, Q4, Q6, and Q8 are electrically connected to the corresponding fourth conductive portions 34. The power terminals 421 of the sources of semiconductor devices Q2, Q4, Q6, and Q8 are also electrically connected to the second portion 332 of the third conductive portion 33 via a binding wire.

[0115] In addition, the power terminal 421 of the source of the semiconductor device Q1 is connected to the first conductive portion 31 where the semiconductor device Q2 is located through a binding wire, so that the source of the semiconductor device Q1 is electrically connected to the drain 41 of the semiconductor device Q2. The power terminal 421 of the source of the semiconductor device Q3 is connected to the first conductive portion 31 where the semiconductor device Q4 is located through a binding wire, so that the source of the semiconductor device Q3 is electrically connected to the drain 41 of the semiconductor device Q4. The power terminal 421 of the source of the semiconductor device Q5 is connected to the first conductive portion 31 where the semiconductor device Q6 is located through a binding wire, so that the source of the semiconductor device Q5 is electrically connected to the drain 41 of the semiconductor device Q6. The power terminal 421 of the source of the semiconductor device Q7 is connected to the first conductive portion 31 where the semiconductor device Q8 is located through a binding wire, so that the source of the semiconductor device Q7 is electrically connected to the drain 41 of the semiconductor device Q8.

[0116] In addition, the signal terminals 422 and gates 43 of the sources of the semiconductor devices Q1 to Q8 are respectively electrically connected to the corresponding fifth conductive parts 35 through binding wires, thereby leading the signal terminals 422 and gates 43 of the sources of the semiconductor devices Q1 to Q8 out of the power module 100 through the signal terminals 351 on the fifth conductive parts 35.

[0117] In this embodiment, the arrangement and connection of the semiconductor devices on the corresponding conductive layers on the first substrate 211 facilitates the connection of the semiconductor devices to the corresponding conductive layers nearby, thereby simplifying the structure of the first power unit 21 .

[0118] According to some other embodiments of the present application, the second power unit 22 includes a semiconductor device Q9, a semiconductor device Q10, a semiconductor device Q11, a semiconductor device Q12, a semiconductor device Q13, a semiconductor device Q14, a semiconductor device Q15, and a semiconductor device Q16. The power terminals 421 of the sources of the semiconductor devices Q9, Q11, Q13, and Q15 are electrically connected to the plurality of first conductive portions 31 in a one-to-one correspondence. The power terminals 421 of the sources of the semiconductor devices Q10, Q12, Q14, and Q16 are electrically connected to the third conductive portion 33. The drains 41 of the semiconductor devices Q9, Q11, Q13, and Q15 are electrically connected to the second conductive portion 32, respectively. 1. The semiconductor device Q13 and the semiconductor device Q15 are arranged spaced apart along the first direction. The drains 41 of the semiconductor devices Q10, Q12, Q14, and Q16 are electrically connected to the plurality of fourth conductive portions 34 in a one-to-one correspondence, and the signal terminals 422 of the sources of the semiconductor devices Q9, Q10, Q11, Q12, Q13, Q14, Q15, and Q16 are electrically connected to the plurality of fifth conductive portions 35 in a one-to-one correspondence.

[0119] In some embodiments, semiconductor device Q9 and semiconductor device Q10 can be connected to form a bridge arm, semiconductor device Q11 and semiconductor device Q12 can also be connected to form a bridge arm, and semiconductor device Q9, semiconductor device Q10, semiconductor device Q11, and semiconductor device Q12 can be connected to form a third H-bridge 223 to constitute a part of the LLC secondary circuit 63.

[0120] Semiconductor device Q13 and semiconductor device Q14 can be connected to form a bridge arm, semiconductor device Q15 and semiconductor device Q16 can also be connected to form a bridge arm, and semiconductor device Q13, semiconductor device Q14, semiconductor device Q15, and semiconductor device Q16 can be connected to form a fourth H-bridge 224 to constitute a part of the DC primary circuit 71.

[0121] There are four first conductive portions 31 on the second substrate 221, each of which may be provided with a power terminal 311. The four power terminals 311 are terminal E, terminal F, terminal G, and terminal H. Semiconductor devices Q9, Q11, Q13, and Q15 may be provided on the second conductive portion 32, and the drains 41 of semiconductor devices Q9, Q11, Q13, and Q15 are all connected to the second conductive portion 32. Semiconductor device Q9 is connected to the first conductive portion 31 where terminal E is located via a binding wire, semiconductor device Q11 is connected to the first conductive portion 31 where terminal F is located via a binding wire, semiconductor device Q13 is connected to the first conductive portion 31 where terminal G is located via a binding wire, and semiconductor device Q15 is connected to the first conductive portion 31 where terminal H is located via a binding wire. This allows the power terminals 421 of the sources of semiconductor devices Q9, Q11, Q13, and Q15 to be led out through the corresponding power terminals 311.

[0122] It should be noted that the arrangement order of the four semiconductor devices on the second conductive portion 32 of the second substrate 221 is semiconductor device Q9, semiconductor device Q11, semiconductor device Q15, and semiconductor device Q13, that is, among the four semiconductor devices, semiconductor device Q13 is the farthest from the first substrate 211.

[0123] There are four fourth conductive portions 34 on the second substrate 221. Semiconductor devices Q10, Q12, Q14, and Q16 are disposed one-to-one on the four fourth conductive portions 34. The drains 41 of the semiconductor devices Q10, Q12, Q14, and Q16 are electrically connected to the corresponding fourth conductive portions 34. The power terminals 421 of the sources of the semiconductor devices Q10, Q12, Q14, and Q16 are also electrically connected to the second portion 332 of the third conductive portion 33 via a binding wire.

[0124] In addition, the power terminal 421 of the source of the semiconductor device Q9 is connected to the first conductive portion 31 where the semiconductor device Q10 is located through a binding wire, so that the source of the semiconductor device Q9 is electrically connected to the drain 41 of the semiconductor device Q10. The power terminal 421 of the source of the semiconductor device Q11 is connected to the first conductive portion 31 where the semiconductor device Q12 is located through a binding wire, so that the source of the semiconductor device Q11 is electrically connected to the drain 41 of the semiconductor device Q12. The power terminal 421 of the source of the semiconductor device Q13 is connected to the first conductive portion 31 where the semiconductor device Q14 is located through a binding wire, so that the source of the semiconductor device Q13 is electrically connected to the drain 41 of the semiconductor device Q14. The power terminal 421 of the source of the semiconductor device Q15 is connected to the first conductive portion 31 where the semiconductor device Q16 is located through a binding wire, so that the source of the semiconductor device Q15 is electrically connected to the drain 41 of the semiconductor device Q16.

[0125] In addition, the signal terminals 422 and gates 43 of the sources of the semiconductor devices Q9 to Q16 are electrically connected to the corresponding fifth conductive parts 35 through binding wires, thereby leading the signal terminals 422 and gates 43 of the sources of the semiconductor devices Q9 to Q16 out of the power module 100 through the signal terminals 351 on the fifth conductive parts 35.

[0126] In this embodiment, the arrangement and connection of the semiconductor devices on the corresponding conductive layers on the second substrate 221 facilitates the connection of the semiconductor devices to the corresponding conductive layers nearby, thereby simplifying the structure of the second power unit 22 .

[0127] In some specific embodiments of the present application, the second conductive portion 32 on the second substrate 221 is provided with a positive terminal HV+ connected to the positive pole of the battery pack, and the third conductive portion 33 on the second substrate 221 is provided with a negative terminal HV- connected to the negative pole of the battery pack. The positive terminal HV+ and the negative terminal HV- are located at one end of the second substrate 221 away from the first substrate 211.

[0128] In some embodiments, the positive terminal HV+ can be set on the side of the power unit Q13 away from the first substrate 211, and the negative terminal HV- can be set at the end of the second part 332 of the third conductive part 33 close to the second conductive part 32, so that the positive terminal HV+ and the negative terminal HV- can be set adjacent to each other to improve the EMC performance of the circuit.

[0129] It should be noted that the operating voltage of the second power unit 22 may be the voltage between the positive terminal HV+ and the negative terminal HV− of the LLC secondary circuit 63 .

[0130] According to some optional embodiments of the present application, an absorption capacitor 80 is connected between the second conductive portion 32 and the second end of each second portion 332 .

[0131] In some embodiments, the first power unit 21 and the second power unit 22 can each have three absorption capacitors 80. By providing absorption capacitors 80 between the second conductive portion 32 and the second end of each second portion 332, a stray inductance loop can be formed to suppress bus voltage fluctuations. Furthermore, this stray inductance loop can minimize the current path between the positive terminal HV+ and the negative terminal HV-, thereby reducing stray inductance, effectively suppressing the turn-off voltage spike of the switch, and improving the anti-interference capability of the power module 100.

[0132] In addition, the absorption capacitor 80 can be welded on the conductive layer, and multiple capacitors can be connected in parallel.

[0133] In some specific embodiments of the present application, the third power unit 23 includes two groups of semiconductor devices, each group of semiconductor devices includes at least one semiconductor device, and the two groups of semiconductor devices are connected through a conductive layer.

[0134] In some embodiments, the third power unit 23 may include multiple groups of semiconductor devices, each group of semiconductor devices may be composed of one or more semiconductor devices, and two groups of semiconductor devices may be connected through a conductive layer to form a DC secondary circuit.

[0135] In some optional embodiments, each group of semiconductor devices includes at least two semiconductor devices, and the semiconductor devices in the same group are arranged in parallel. In other words, each group of semiconductor devices may include multiple semiconductor devices, and the multiple semiconductor devices in each group may be connected in parallel. One of the two groups of semiconductor devices may be connected to one end of the secondary winding of the transformer T2, and the other of the two groups of semiconductor devices may be connected to the other end of the secondary winding of the transformer T2.

[0136] For example, as shown in Figure 1, the number of semiconductor devices in each group of semiconductor devices can be three, that is, the third power unit 23 can include six semiconductor devices, and the six semiconductor devices can be connected to form a full bridge 233. The full bridge 233 can be a three-phase full bridge, and the three-phase full bridge can rectify AC power into DC power.

[0137] According to some optional embodiments of the present application, two semiconductor devices may be arranged along the first direction, thereby rationally arranging the semiconductor devices in the third power unit 23 and facilitating nearby connection of the semiconductor devices.

[0138] Optionally, the multiple semiconductor devices in each group of semiconductor devices may be arranged at intervals along a second direction, and the second direction may be perpendicular to the first direction, so that the layout of the semiconductor devices in the third power unit 23 is more reasonable.

[0139] According to some other embodiments of the present application, the third power unit 23 includes a semiconductor device Q17, a semiconductor device Q18, a semiconductor device Q19, a semiconductor device Q20, a semiconductor device Q21, and a semiconductor device Q22, and the semiconductor device Q17, the semiconductor device Q18, the semiconductor device Q19, the semiconductor device Q20, the semiconductor device Q21, and the semiconductor device Q22 are arranged symmetrically on the third substrate 231 relative to the axis extending along the second direction.

[0140] In some embodiments, semiconductor devices Q17, Q19, and Q21 can be connected in parallel to form a group of semiconductor devices. Semiconductor device Q18, Q20, and Q22 can be connected in parallel to form another group of semiconductor devices. Semiconductor devices Q17-Q22 can be connected to form a full bridge 233 to form part of DC secondary circuit 72.

[0141] The third substrate 231 may be provided with a conductive layer suitable for connecting to form a portion of the DC secondary circuit 72. Semiconductor devices Q17-Q22 may be provided on the corresponding third conductive layer 232. The drains 41 of semiconductor devices Q17-Q22 are electrically connected to the corresponding conductive layer. The drains 41 of semiconductor devices Q17, Q19, and Q21 are led out through terminal I, while the drains 41 of semiconductor devices Q18, Q20, and Q22 are led out through terminal K. The power terminals 421 of the sources of semiconductor devices Q17-Q22 are connected to the corresponding conductive layer using binding wires and are led out through terminal J.

[0142] In addition, semiconductor device Q17, semiconductor device Q19, semiconductor device Q21 are axially symmetrically distributed with semiconductor device Q18, semiconductor device Q20, and semiconductor device Q22, and the axis of symmetry extends along the second direction. The second direction and the first direction can be perpendicular to each other, so that each semiconductor device can be connected nearby, simplifying the structure of the third power unit 23 and reducing the volume of the third power unit 23.

[0143] It should be noted that, since the currents of terminals I, J, and K are relatively large, a larger output pin may be used to act on terminals I, J, and K. The operating voltage of the third power unit 23 may be the voltage between terminals I and K.

[0144] In some specific embodiments of the present application, a heat sink 90 is provided on the second side of the base plate 10. Since the power module 100 of this embodiment integrates the semiconductor devices in the OBC-DC circuit, the heat sink 90 can be provided on the second side of the base plate 10 for integrated heat dissipation. Optionally, the heat sink 90 can be a flat plate or a pin-fin heat sink 90.

[0145] In this embodiment, compared to traditional independent MOS tube heat dissipation, this embodiment integrates multiple power units through the power module 100 and dissipates heat through the heat sink 90, achieving better heat dissipation. In addition, the provision of the heat sink 90 on the second side of the base plate 10 provides a larger heat capacity and a more efficient heat dissipation path, thereby improving the heat dissipation effect and being more effective in heat dissipation during instantaneous high current surges.

[0146] The embodiment of the present application further provides an on-board charging device 1000 as shown in FIG8 , which includes: a power module 100 according to any of the above embodiments. Since the power module 100 according to the embodiment of the present application has the above technical effects, the on-board charging device 1000 according to the embodiment of the present application also has corresponding technical effects, namely, the power module 100 has a more compact structure, a small size, and high reliability, which is conducive to reducing the volume and weight of the on-board charging device 1000, facilitating the design and application of the OBC-DC circuit, and realizing a high degree of integration of the OBC-DC circuit. At the same time, the integrated power module 100 is also conducive to centralized heat dissipation, reducing the complexity of the heat dissipation structure.

[0147] In addition, the on-board charging device 1000 may further include: a driver board 200, multiple inductors, multiple capacitors, multiple transformers, and multiple driver chips 300. In some embodiments, the power module 100 is disposed on a first side of the driver board 200, with the first side of the base plate 10 facing the first side of the driver board 200. The multiple inductors, multiple capacitors, multiple transformers, and multiple driver chips 300 are used to form an OBC-DC circuit. The multiple inductors, multiple capacitors, and multiple transformers are all disposed on the first side of the driver board 200 and electrically connected to the power module 100. The driver chip 300 is disposed on a second side of the driver board 200 and electrically connected to the power module 100.

[0148] In some embodiments, the vehicle-mounted charging device 1000 of this embodiment can be mainly composed of a driving board 200, a power module 100, multiple inductors, multiple capacitors, multiple transformers and multiple driving chips 300, and the power module 100, multiple inductors, multiple capacitors, multiple transformers and multiple driving chips 300 can be electrically connected to the driving board 200.

[0149] In some embodiments, the inductor may include inductors L1 to L4, the transformer may include transformer T1 and transformer T2, and the capacitor may include capacitors C1 to C3.

[0150] The transformer T1 is provided between the LLC primary circuit 62 and the LLC secondary circuit 63 , and the transformer T2 is provided between the DC primary circuit 71 and the DC secondary circuit 72 .

[0151] Inductor L1 can be set between terminal A and the AC power supply AC-IN, inductor L2 can be set between terminal D and the primary side of transformer T1, inductor L3 can be set between the secondary side of transformer T1 and terminal E, and inductor L4 can be set between the secondary side of the transformer and the second end of the DC secondary circuit 72.

[0152] Capacitor C1 is provided between terminal C and the primary side of transformer T1 , capacitor C2 is provided between the secondary side of transformer T1 and terminal F, and capacitor C3 is provided between the high and low voltage terminals of the second end of DC secondary circuit 72 .

[0153] Inductors L1-L4, transformers T1, T2, and capacitors C1-C3 can be arranged on the first side of the driver board 200 together with the power module 100, and the driver chip 300 can be arranged on the second side of the driver board 200. This facilitates the arrangement of the wiring of the drive circuit and the power circuit in the on-board charging device 1000, which is beneficial to improving the EMC performance of the on-board charging device 1000, while also making the structure of the on-board charging device 1000 more compact. In addition, it can also isolate the high-voltage circuit from the low-voltage circuit.

[0154] Optionally, the inductors L1 to L4 , the transformer T1 , and the transformer T2 may be integrated into three independent devices, respectively, to further improve the integration level of the on-board charging device 1000 and reduce the volume of the on-board charging device 1000 .

[0155] In some other embodiments, the base plate 10 of the power module 100 may be fixed to the driving board 200 by a plurality of screws, and the number of screws may be set as needed.

[0156] In some specific embodiments of the present application, multiple inductors, multiple capacitors, and multiple transformers are all located on the same side of the power module 100. In other words, the inductors L1-L4, transformers T1 and T2, and capacitors C1-C3 can all be located on the right side of the power module 100 as shown in FIG7 , so that the various electronic components in the circuit of the vehicle charging and discharging system can be connected nearby.

[0157] The present application also provides an integrated controller 10000 as shown in FIG9 . The integrated controller 10000 includes the vehicle-mounted charging device 1000 of any of the above-described embodiments. The integrated controller 10000 can be used to form part of a vehicle electronic control system to control vehicle-mounted power supply / power consumption equipment, including a battery pack, a low-voltage battery, and low-voltage vehicle-mounted power consumption equipment.

[0158] Since the on-board charging device 1000 according to the embodiment of the present application has the above-mentioned technical effects, the integrated controller 10000 according to the embodiment of the present application also has corresponding technical effects, that is, the power module 100 has a more compact structure, a small size, and high reliability, which is conducive to reducing the volume and weight of the on-board charging device 1000, facilitating the design and application of the OBC-DC circuit, so as to achieve high integration of the OBC-DC circuit. At the same time, the integrated power module 100 is also conducive to centralized heat dissipation, reducing the complexity of the heat dissipation structure.

[0159] The present application also provides a vehicle 1 as shown in Figures 10 and 11, which includes an integrated controller 10000 according to any of the above-mentioned embodiments. Since the integrated controller 10000 according to the embodiments of the present application has the above-mentioned technical effects, the vehicle 1 according to the embodiments of the present application also has corresponding technical effects, namely, the power module 100 has a more compact structure, a small size, and high reliability, which is conducive to reducing the volume and weight of the integrated controller 10000, facilitating the design and application of the OBC-DC circuit, and realizing a high degree of integration of the OBC-DC circuit. At the same time, the integrated power module 100 is also conducive to centralized heat dissipation, reducing the complexity of the heat dissipation structure.

[0160] Throughout this specification, reference to terms such as "one embodiment," "some embodiments," "illustrative embodiments," "examples," "specific examples," or "some examples" means that the specific features, structures, materials, or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

[0161] Although the embodiments of the present application have been shown and described, those skilled in the art will appreciate that various changes, modifications, substitutions, and variations may be made to the embodiments without departing from the principles and intent of the present application, and that the scope of the present application is defined by the claims and their equivalents.

Claims

1. A power module (100), characterized in that: include: Bottom plate (10); A power module body, the power module body comprising a plurality of semiconductor devices constituting an OBC-DC circuit, the power module body being arranged on a first side surface of the base plate (10); A packaging shell (50), wherein the packaging shell (50) packages the power module body on the first side surface of the base plate (10).

2. The power module (100) according to claim 1, characterized in that: The power module body includes a plurality of power units spaced apart from each other.

3. The power module (100) according to claim 2, characterized in that: Each of the power cells includes a conductive layer and at least two semiconductor devices, and the semiconductor devices are electrically connected through the conductive layer.

4. The power module (100) according to claim 3, characterized in that: A drain electrode (41) electrically connected to the conductive layer is provided on the side of each semiconductor device facing the conductive layer, and a source electrode and a gate electrode (43) are provided on the side of each semiconductor device away from the conductive layer.

5. The power module (100) according to claim 3 or 4, characterized in that: Each of the power units further comprises a substrate, which is arranged between the corresponding conductive layer and the bottom plate (10).

6. The power module (100) according to any one of claims 3 to 5, characterized in that: The plurality of power units include a first power unit (21), a second power unit (22) and a third power unit (23) which are arranged at intervals from each other.

7. The power module (100) according to claim 6, wherein the OBC-DC circuit comprises an OBC circuit and a DCDC circuit, the OBC circuit comprises a PFC circuit (61) and an LLC circuit, the LLC circuit comprises an LLC primary circuit (62) and an LLC secondary circuit (63), and the DCDC circuit comprises a DC primary circuit (71) and a DC secondary circuit (72); The first power unit (21) includes the semiconductor device forming the PFC circuit (61) and the semiconductor device forming the LLC primary circuit (62), the second power unit (22) includes the semiconductor device forming the LLC secondary circuit (63) and the semiconductor device forming the DC primary circuit (71), and the third power unit (23) includes the semiconductor device forming the DC secondary circuit (72).

8. The power module (100) according to claim 6, wherein the OBC-DC circuit comprises a PFC circuit (61), an LLC circuit and a DC secondary circuit (72), wherein the LLC circuit comprises an LLC primary circuit (62) and an LLC secondary circuit (63), wherein the LLC circuit constitutes a first voltage conversion circuit, and wherein one of the LLC primary circuit (62) and the LLC secondary circuit (63) and the DC secondary circuit (72) constitute a second voltage conversion circuit. The first power unit (21) includes the semiconductor device forming the PFC circuit (61), the second power unit (22) includes the semiconductor device forming the LLC circuit, and the third power unit (23) includes the semiconductor device forming the DC secondary circuit (72).

9. The power module (100) according to any one of claims 6 to 8, characterized in that: The first power unit (21) and the second power unit (22) are provided with at least one pair of capacitor connecting pins (24); The first power unit (21) and the second power unit (22) respectively comprise at least two bridge arms, each of the bridge arms comprises an upper bridge arm (25) and a lower bridge arm (26), and each pair of capacitor connection pins (24) respectively connects the upper bridge arm (25) and the lower bridge arm (26).

10. The power module (100) according to any one of claims 6 to 9, characterized in that: The first power unit (21), the second power unit (22) and the third power unit (23) are arranged in sequence and spaced apart from each other along a first direction.

11. The power module (100) according to claim 10, characterized in that: The first power unit (21) comprises four bridge arms, two of the four bridge arms form a first H-bridge (213), the other two of the four bridge arms form a second H-bridge (214), and the first H-bridge (213) and the second H-bridge (214) are arranged along the first direction.

12. The power module (100) according to claim 10, characterized in that: The second power unit (22) comprises four bridge arms, two of the four bridge arms form a third H-bridge (223), the other two of the four bridge arms form a fourth H-bridge (224), and the third H-bridge (223) and the fourth H-bridge (224) are arranged along the first direction.

13. The power module (100) according to claim 10, characterized in that: The third power unit (23) comprises two groups of semiconductor devices, each group of semiconductor devices comprises at least one semiconductor device, and the two groups of semiconductor devices are connected via the conductive layer.

14. The power module (100) according to claim 13, characterized in that: Each group of semiconductor devices includes at least two semiconductor devices, and the semiconductor devices in the same group are arranged in parallel.

15. The power module (100) according to claim 13, characterized in that: The two groups of semiconductor devices are arranged along the first direction.

16. The power module (100) according to any one of claims 1 to 15, characterized in that: A heat sink (90) is provided on the second side surface of the bottom plate (10).

17. A vehicle-mounted charging device (1000), characterized in that: include: The power module (100) according to any one of claims 1 to 16.

18. An integrated controller (10000), characterized in that: It comprises the on-vehicle charging device (1000) as claimed in claim 17.

19. A vehicle (1), characterized in that It comprises the on-vehicle charging device (1000) as claimed in claim 17, or comprises the integrated controller (10000) as claimed in claim 18.

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