Radio frequency front-end module

Abstract

The present application discloses a radio frequency front-end module. The radio frequency front-end module comprises a switch module and a tuning module connected to the switch module in series, wherein the tuning module has a first port and a second port, the first port being connected to the switch module, and the second port being used for outputting a radio frequency signal obtained after the tuning module performs harmonic suppression; and the tuning module is configured to generate a second signal having an opposite phase to a first signal, the first signal being a harmonic signal in a radio frequency signal that is input by means of the first port. Thus, when a first port inputs a radio frequency signal, a tuning module can generate a second signal having an opposite phase to a harmonic signal in the radio frequency signal, so as to cancel out the harmonic signal; and since the second signal has the characteristic of a broad frequency, for example, the second signal can cover the entire Sub-3 GHz frequency band, the second signal can cancel out harmonic signals over a broad frequency, thereby realizing wideband suppression.

Description

RF front-end module

[0001] This application is based on the Chinese application number 202311131427.0 filed on September 4, 2023, entitled “RF Front-End Module”, and claims priority. Technical Field

[0002] The present application relates to the field of radio frequency technology, and more specifically, to a radio frequency front-end module. Background Art

[0003] With the continuous development of RF technology, the harmonic suppression capability of RF front-end modules has become an important criterion for measuring the hardware performance of RF front-end modules.

[0004] In existing RF front-end modules, a filter circuit composed of capacitors and inductors (e.g., an LC resonant circuit) is typically used to suppress harmonic signals of a specified frequency. However, this filter circuit provides narrowband suppression and cannot achieve good broadband suppression.

[0005] Application Contents

[0006] An embodiment of the present application provides a radio frequency front-end module.

[0007] According to a first aspect of the present application, an embodiment of the present application provides a radio frequency front-end module, comprising a switch module and a tuning module connected in series with the switch module. The tuning module has a first port and a second port, the first port being connected to the switch module, and the second port being used to output a radio frequency signal after harmonic suppression by the tuning module. The tuning module is configured to generate a second signal having a phase opposite to that of a first signal, where the first signal refers to a harmonic signal in the radio frequency signal input by the first port.

[0008] The present application provides a radio frequency front-end module, which includes a switch module and a tuning module connected in series, wherein the first port of the tuning module is connected to the switch module, and the second port is used to output the radio frequency signal after harmonic suppression through the tuning module. When the first port inputs the radio frequency signal, the tuning module can generate a second signal with a phase opposite to the harmonic signal in the radio frequency signal to offset the harmonic signal. Since the second signal has a wide frequency characteristic, for example, the second signal can cover the entire Sub-3GHz frequency band, the second signal can offset the wide frequency harmonic signal and achieve broadband suppression.

[0009] According to the second aspect of the present application, an embodiment of the present application further provides a radio frequency front-end module, which includes a substrate and a designated chip. The designated chip is arranged on the substrate, and the designated chip integrates a switch module and a tuning module connected in series with the switch module. The tuning module has a first port and a second port, the first port is connected to the switch module, and the second port is used to output the radio frequency signal after harmonic suppression through the tuning module. The tuning module is configured to: generate a second signal with a phase opposite to that of the first signal, and the first signal refers to a harmonic signal in the radio frequency signal input by the first port.

[0010] The present application also provides a radio frequency front-end module, comprising a substrate and a designated chip disposed on the substrate, wherein the designated chip integrates a switch module and a tuning module connected in series. The tuning module has a first port connected to the switch module, and a second port for outputting a radio frequency signal after harmonic suppression by the tuning module.

[0011] When an RF signal is input to the first port, the tuning module generates a second signal with a phase opposite to the harmonics in the RF signal to cancel the harmonics. Because the second signal has a wide frequency range, for example, it can cover the entire sub-3GHz frequency band, it can cancel out harmonics across a wide frequency range, achieving broadband suppression.

[0012] Furthermore, since the switch module and the tuning module are integrated into the same chip (i.e., the designated chip), the integration of the RF front-end module can be improved. In addition, since the tuning module can achieve the effect of harmonic suppression, there is no need to set up an additional LC resonant circuit (e.g., a chip capacitor), thereby eliminating the need for peripheral circuit suppression. On the one hand, the tuning module can be enabled to suppress harmonic signals with a wider frequency (e.g., harmonic signals with a frequency band of 900MHz to 2600MHz); on the other hand, the tuning module can be enabled to suppress harmonic signals in RF signals with higher power, for example, the power of the RF signal input to the switch module can be greater than or equal to 30dBm. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0014] FIG1 is a schematic structural diagram of a radio frequency front-end module provided in an embodiment of the present application.

[0015] FIG2 is a schematic structural diagram of the tuning module in FIG1 .

[0016] FIG3 is a schematic diagram of a first structure of the tuning module shown in FIG2 .

[0017] FIG4 is a schematic diagram of a second structure of the tuning module shown in FIG2 .

[0018] FIG5 is a schematic diagram of a third structure of the tuning module shown in FIG2 .

[0019] FIG6 is a schematic diagram of a fourth structure of the tuning module shown in FIG2 .

[0020] FIG7 is a schematic diagram of a fifth structure of the tuning module shown in FIG2 .

[0021] FIG8 is another structural diagram of the tuning module in FIG1 .

[0022] FIG9 is a schematic diagram of a first structure of the tuning module shown in FIG8 .

[0023] FIG10 is a schematic diagram of a second structure of the tuning module shown in FIG8 .

[0024] FIG11 is a schematic diagram of a third structure of the tuning module shown in FIG8 .

[0025] FIG12 is another structural diagram of the tuning module in FIG1 .

[0026] FIG13 is a schematic structural diagram of the tuning module shown in FIG12 .

[0027] FIG14 is another structural diagram of the tuning module shown in FIG12 .

[0028] FIG15 is another structural diagram of the RF front-end module provided in an embodiment of the present application.

[0029] FIG16 is another structural diagram of the RF front-end module provided in an embodiment of the present application. DETAILED DESCRIPTION

[0030] In order to enable those skilled in the art to better understand the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments in the present invention, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present invention.

[0031] The present invention provides a radio frequency front-end module 100. This module integrates two or more discrete components, such as a radio frequency switch, a low-noise amplifier, a filter, a duplexer, and a power amplifier, into a single module. This improves integration and hardware performance while miniaturizing the module. Specifically, the module can be used in 4G and 5G communication devices, such as smartphones, tablets, and smartwatches.

[0032] Referring to Figure 1 , the RF front-end module 100 in this embodiment may include a switch module 10 and a tuning module 20 connected in series with the switch module 10. The tuning module 20 has a first port 210 and a second port 230. The first port 210 is connected to the switch module 10, and the second port 230 is used to output the RF signal after harmonic suppression by the tuning module 20. The tuning module 20 is configured to generate a second signal having a phase opposite to that of the first signal, where the first signal refers to a harmonic signal in the RF signal input by the first port 210.

[0033] When a radio frequency signal is input to the first port 210, the tuning module 20 generates a second signal with a phase opposite to that of the harmonics in the radio frequency signal to cancel the harmonics. Because the second signal has a wide frequency range, for example, it can cover the entire sub-3 GHz frequency band, it can cancel harmonics across a wide frequency range, achieving broadband suppression.

[0034] Furthermore, compared to the RF front-end module that needs to set up multiple LC resonant circuits to achieve broadband suppression, the RF front-end module 100 in this embodiment only needs to set up one tuning module 20 to achieve the effect of broadband suppression, thereby saving the hardware cost of the RF front-end module 100 and saving the layout space of the RF front-end module 100, which is conducive to the miniaturization design of the RF front-end module 100.

[0035] It should be noted that the absolute value of the phase difference between the second signal generated by the tuning module 20 in this embodiment and the harmonic signal in the RF signal is greater than or equal to 170 degrees and less than or equal to 190 degrees. It is not difficult to understand here that, under ideal conditions, the above-mentioned phase difference is equal to 180 degrees or -180 degrees. Therefore, the phase of the second signal is opposite to the phase of the harmonic signal in the RF signal to offset the harmonic signal in the RF signal, thereby suppressing the harmonic signal in the RF signal.

[0036] The following is a detailed introduction to each unit in the RF front-end module 100.

[0037] In this embodiment, the switch module 10 can be any switch module in the RF front-end module. For example, the switch module 10 can be an antenna switch for the antenna port of an electronic device (e.g., a smartphone), or a band selector switch. The band selector switch can be connected between the power amplifier module (PA) and the tuner module 20. When the RF signal output by the power amplifier module is applied to the band selector switch, the band selector switch itself generates harmonic signals, which in turn affects the linearity of the RF signal.

[0038] The tuning module 20 is connected in series with the switch module 10 to suppress harmonic signals in the RF signal. Specifically, when the harmonic signal generated by the switch module 10 is input into the tuning module 20 through the first port 210, the tuning module 20 can generate a second signal with an opposite phase to the harmonic signal, thereby canceling the harmonic signal and suppressing the harmonic signal, thereby ensuring the linearity of the RF signal.

[0039] In some possible embodiments, referring to FIG2 , the tuning module 20 may further include a control port 250 configured to input a bias control signal. For example, the bias control signal may be a bias voltage, which may be greater than or equal to 2.5V and less than or equal to 3V.

[0040] Specifically, the tuning module 20 may include a first transistor 211, a second transistor 212, and a first resistor unit 213. The first signal terminal 2110 of the first transistor 211 is connected to the first port 210, the second signal terminal 2112 of the first transistor 211 is connected to the second signal terminal 2122 of the second transistor 212, and the first signal terminal 2120 of the second transistor 212 is connected to the second port 230. One end of the first resistor unit 213 is connected to the control port 250, and the other end of the first resistor unit 213 is connected to a common terminal of the first transistor 211 and the second transistor 212.

[0041] Therefore, when the bias control signal is applied to the first transistor 211 and the second transistor 212 through the first resistor unit 213, the first transistor 211 and the second transistor 212 can be made equivalent to a capacitor with adjustable capacitance, and the equivalent capacitor and the first resistor unit 213 form a resonance to generate the above-mentioned second signal.

[0042] In the embodiment shown in FIG2 , the equivalent resistance value of the first resistance unit 213 is greater than or equal to 1 kilo-ohm. Therefore, the first resistance unit 213 can be regarded as a large resistor, thereby preventing the RF signal input from the first port 210 from leaking from the control port 250 and causing nonlinear distortion of the signal, thereby ensuring normal transmission of the RF signal. Specifically, the first resistance unit 213 can be a single resistor, one end of which is connected to the control port 250 and the other end is connected to the common terminal of the first transistor 211 and the second transistor 212. The resistance value of the resistor is greater than or equal to 1 kilo-ohm, for example, 2 kilo-ohm, 5 kilo-ohm, etc. In some other possible embodiments, the first resistance unit 213 may include multiple resistors, one end of which is connected in series or in parallel to the control port 250 and the other end is connected to the common terminal of the first transistor 211 and the second transistor 212. This embodiment does not specifically limit the specific implementation of the first resistance unit 213.

[0043] In some possible embodiments, the parameters of the first transistor 211 and the second transistor 212 are the same. The "parameters" here may include the type, model, hardware parameters (for example, current amplification gain) of the transistor, etc. In other possible embodiments, the first transistor 211 and the second transistor 212 are the same size. The "size" here can be understood as the package size of the transistor (for example, the length of the transistor, the aspect ratio, etc.). Therefore, the first transistor 211 and the second transistor 212 in this embodiment are two identical transistors, so that the tuning module 20 has better symmetry. Therefore, when the tuning module 20 is applied in the RF front-end module 100, even if the tuning module 20 is reversed, it will not affect the normal operation of the tuning module 20. In addition, the same size of the first transistor 211 and the second transistor 212 can also make the two transistors more compact and balanced in the hardware layout.

[0044] As a first possible implementation, please refer to Figure 3. The first transistor 211 and the second transistor 212 are both diodes D. The first signal terminal 2110 of the first transistor 211 and the first signal terminal 2120 of the second transistor 212 are the positive electrodes of the diodes D, and the second signal terminal 2112 of the first transistor 211 and the second signal terminal 2122 of the second transistor 212 are the negative electrodes of the diodes D. Therefore, the diodes D in this embodiment are connected in reverse. When the bias control signal is applied to the two diodes D, the two diodes D can be equivalent to a capacitor with adjustable capacitance. That is, by changing the magnitude of the bias control signal applied to the two diodes D, the magnitude of the capacitance equivalent to the two diodes D can be changed. When the RF signal passes through the tuning module 20, the two diodes D and the first resistor unit 213 can jointly generate a second signal, which can suppress the harmonic signal in the RF signal.

[0045] As a second possible embodiment, referring to FIG. 4 , the first transistor 211 and the second transistor 212 are both bipolar junction transistors (BJTs). The first signal terminal 2110 of the first transistor 211 and the first signal terminal 2120 of the second transistor 212 are the collectors C of the BJTs. The second signal terminal 2112 of the first transistor 211 and the second signal terminal 2122 of the second transistor 212 are the emitters E of the BJTs. The bases B of the BJTs are connected to the collectors C of the corresponding BJTs. Since the bases B of the two BJTs are respectively connected to the corresponding collectors C, the two BJTs can be equivalent to diodes. Therefore, when the two BJTs are connected in reverse and a bias voltage is applied to the two BJTs, the two BJTs can be equivalent to a capacitor with adjustable capacitance. That is, by changing the magnitude of the bias control signal applied to the two BJTs, the magnitude of the equivalent capacitance of the two BJTs can be changed. When the radio frequency signal passes through the tuning module 20 , the two BJT tubes and the first resistor unit 213 can jointly generate a second signal, and the second signal can suppress the harmonic signal in the radio frequency signal.

[0046] As a third possible implementation, please refer to Figure 5. The first transistor 211 and the second transistor 212 are both metal oxide semiconductor field effect transistors (MOSFETs). The first signal terminal 2110 of the first transistor 211 and the first signal terminal 2120 of the second transistor 212 are the drains D of the MOSFETs. The second signal terminal 2112 of the first transistor 211 and the second signal terminal 2122 of the second transistor 212 are the sources S of the MOSFETs. The gates G of the MOSFETs are connected to the drains D of the corresponding MOSFETs.

[0047] As a fourth possible implementation, please refer to Figure 6, the first transistor 211 and the second transistor 212 are both MOSFET tubes, the first signal terminal 2110 of the first transistor 211 and the first signal terminal 2120 of the second transistor 212 are the source S of the MOSFET tube, the second signal terminal 2112 of the first transistor 211 and the second signal terminal 2122 of the second transistor 212 are the drain D of the MOSFET tube, and the gate G of the MOSFET tube is connected to the source S of the corresponding MOSFET tube.

[0048] As a fifth possible implementation, please refer to Figure 7, the first transistor 211 and the second transistor 212 are both MOSFET tubes, the first signal terminal 2110 of the first transistor 211 and the first signal terminal 2120 of the second transistor 212 are the source S of the MOSFET tube, the second signal terminal 2112 of the first transistor 211 and the second signal terminal 2122 of the second transistor 212 are the gate G of the MOSFET tube, and the drain D of the MOSFET tube is connected to the source S of the corresponding MOSFET tube.

[0049] Since in the embodiments shown in FIG5, FIG6 or FIG7, any two of the drain D, source S and gate G of the MOSFET tube are connected, the MOSFET tube can be equivalent to a diode. Therefore, when the two connected poles in the two MOSFET tubes are the same and the two MOSFET tubes are connected in reverse, under the action of the bias voltage, the two MOSFET tubes can be equivalent to a capacitor with adjustable capacitance, that is, by changing the magnitude of the bias control signal applied to the two MOSFET tubes, the magnitude of the capacitance equivalent to the two MOSFET tubes can be changed. When the RF signal passes through the tuning module 20, the two MOSFET tubes and the first resistor unit 213 can jointly generate a second signal, which can suppress the harmonic signal in the RF signal.

[0050] In other possible embodiments, referring to FIG8 , the tuning module 20 may include a third transistor 214, a fourth transistor 215, a second resistor unit 216, and a third resistor unit 217. The second resistor unit 216 and the third resistor unit 217 are connected in series at one end to the first port 210, and at the other end to the second port 230. A first signal terminal 2140 of the third transistor 214 and a first signal terminal 2150 of the fourth transistor 215 are both connected to a common end of the second resistor unit 216 and the third resistor unit 217. A second signal terminal 2142 of the third transistor 214 is connected to the first port 210, and a second signal terminal 2152 of the fourth transistor 215 is connected to the second port 230.

[0051] Therefore, when the RF signal passes through the third transistor 214 and the fourth transistor 215 in the tuning module 20, a self-bias voltage is generated. Since the third transistor 214 and the fourth transistor 215 are connected in reverse, the self-bias voltage causes the third transistor 214 and the fourth transistor 215 to turn on in turn. That is, at the same time, only one of the third transistor 214 and the fourth transistor 215 is in the on state. As a result, the current in the third transistor 214 and the fourth transistor 215 changes over time. The total current after the superposition of the two generates a second signal with a phase opposite to that of the RF signal. This second signal can suppress the harmonic signals in the RF signal.

[0052] Furthermore, the tuning module 20 shown in FIG. 8 can generate the second signal without inputting an additional bias signal, which can simplify the connection method of the tuning module 20 .

[0053] In the embodiment shown in FIG8 , the second resistor unit 216 is connected in parallel on both sides of the third transistor 214, and the third resistor unit 217 is connected in parallel on both sides of the fourth transistor 215. The second resistor unit 216 and the third resistor unit 217 can each protect the parallel-connected transistors from breakdown due to excessive current, thereby ensuring safe operation of the tuning module 20. Specifically, the second resistor unit 216 and the third resistor unit 217 have the same equivalent resistance value, which ensures that the tuning module 20 has good symmetry.

[0054] The second resistance unit 216 and the third resistance unit 217 may be a single resistor, or a resistance network composed of a plurality of resistors connected in series or in parallel, which is not specifically limited in this embodiment.

[0055] In some possible embodiments, the parameters of the third transistor 214 and the fourth transistor 215 are the same. The "parameters" here may include the type, model, hardware parameters (for example, current amplification gain) of the transistor, etc. In other possible embodiments, the third transistor 214 and the fourth transistor 215 are the same size. The "size" here can be understood as the package size of the transistor (for example, the length, aspect ratio, etc. of the transistor). Therefore, the third transistor 214 and the fourth transistor 215 in this embodiment are two identical transistors, so that the tuning module 20 has better symmetry. Therefore, when the tuning module 20 is applied in the RF front-end module 100, even if the tuning module 20 is reversed, it will not affect the normal operation of the tuning module 20. In addition, the same size of the third transistor 214 and the fourth transistor 215 can also make the two transistors more compact and balanced in the hardware layout.

[0056] As a possible implementation, referring to FIG. 9 , the third transistor 214 and the fourth transistor 215 are both diodes D. The first signal terminal 2140 of the third transistor 214 and the first signal terminal 2150 of the fourth transistor 215 serve as the anode of the diode D, and the second signal terminal 2142 of the third transistor 214 and the second signal terminal 2152 of the fourth transistor 215 serve as the cathode of the diode D. Therefore, in this embodiment, the two diodes D are connected in opposite directions. When a radio frequency signal passes through the two diodes D, a self-bias voltage is generated. This self-bias voltage causes the two diodes D to conduct in turn, so that the total current after the currents in the two diodes D are superimposed generates a second signal with a phase opposite to that of the radio frequency signal. This second signal can suppress harmonic signals in the radio frequency signal.

[0057] As another possible embodiment, referring to FIG. 10 , the third transistor 214 and the fourth transistor 215 are both metal oxide semiconductor field effect transistors (MOSFETs). The first signal terminal 2140 of the third transistor 214 and the first signal terminal 2150 of the fourth transistor 215 are drains D of the MOSFETs. The second signal terminal 2142 of the third transistor 214 and the second signal terminal 2152 of the fourth transistor 215 are sources S of the MOSFETs. The gate G of the MOSFETs is connected to the source S. Because the gate G and source S of the MOSFETs are connected, the MOSFETs can be equivalent to a diode. Furthermore, the two MOSFETs are connected in opposite directions. When an RF signal passes through the two MOSFETs, a self-bias voltage is generated. This self-bias voltage causes the two MOSFETs to conduct in turn, so that the total current after the currents in the two MOSFETs are superimposed generates a second signal with a phase opposite to that of the RF signal. This second signal can suppress harmonic signals in the RF signal.

[0058] In some possible embodiments, the tuning module 20 may further include a fourth resistor unit 218 and a fifth resistor unit 219. Referring to FIG11 , one end of the fourth resistor unit 218, the second resistor unit 216, the third resistor unit 217, and the fifth resistor unit 219 connected in series is connected to the first port 210, and the other end is connected to the second port 230. The second signal terminal 2142 of the third transistor 214 is connected to the common terminal of the fourth resistor unit 218 and the second resistor unit 216, and the second signal terminal 2152 of the fourth transistor 215 is connected to the common terminal of the third resistor unit 217 and the fifth resistor unit 219. In this embodiment, the provision of the fourth resistor unit 218 and the fifth resistor unit 219 can further serve as a current limiter to prevent the third transistor 214 and the fourth transistor 215 from breaking down due to excessive current. Specifically, the fourth resistor unit 218 and the fifth resistor unit 219 have the same equivalent resistance value, so that the tuning module 20 has good symmetry. The fourth resistance unit 218 and the fifth resistance unit 219 may be a single resistor, or a resistance network consisting of a plurality of resistors connected in series or in parallel, which is not specifically limited in this embodiment.

[0059] In yet other possible embodiments, referring to FIG. 12 , the tuning module 20 may include a fifth transistor 221, a sixth transistor 222, a sixth resistor unit 223, and a seventh resistor unit 224. The first signal terminal 2210 of the fifth transistor 221 is connected to the second signal terminal 2222 of the sixth transistor 222 to form a first common terminal 32. The first common terminal 32 is connected to the first port 210 via the sixth resistor unit 223. The second signal terminal 2212 of the fifth transistor 221 is connected to the first signal terminal 2220 of the sixth transistor 222 to form a second common terminal 34. The second common terminal 34 is connected to the second port 230 via the seventh resistor unit 224.

[0060] Therefore, when the RF signal passes through the fifth transistor 221 and the sixth transistor 222 in the tuning module 20, a self-bias voltage is generated. Since the fifth transistor 221 and the sixth transistor 222 are connected in reverse, the self-bias voltage causes the fifth transistor 221 and the sixth transistor 222 to turn on in turn. That is, at the same time, only one of the fifth transistor 221 and the sixth transistor 222 is in the on state. As a result, the current in the fifth transistor 221 and the sixth transistor 222 changes over time. The total current after the superposition of the two generates a second signal with a phase opposite to that of the RF signal. This second signal can suppress the harmonic signal in the RF signal.

[0061] Furthermore, the tuning module 20 shown in FIG12 can generate the second signal without inputting an additional bias signal, which can simplify the connection method of the tuning module 20 .

[0062] In the embodiment shown in FIG12 , the transistor network formed by the fifth transistor 221 and the sixth transistor 222 is connected to the first port 210 via the sixth resistor unit 223 and to the second port 230 via the seventh resistor unit 224. That is, the sixth resistor unit 223, the transistor network, and the seventh resistor unit 224 are connected in series. Therefore, when the RF signal passes through the third transistor 214 and the fourth transistor 215 in the tuning module 20, the sixth resistor unit 223 and the seventh resistor unit 224 can respectively play a role in current limiting to prevent the fifth transistor 221 and the sixth transistor 222 from breaking down due to excessive current, thereby ensuring the safe operation of the tuning module 20. Specifically, the equivalent resistance values ​​of the sixth resistor unit 223 and the seventh resistor unit 224 are the same, so that the tuning module 20 has good symmetry. The sixth resistor unit 223 and the seventh resistor unit 224 can each be a single resistor, or a resistor network consisting of multiple resistors connected in series or in parallel, which is not specifically limited in this embodiment.

[0063] In some possible embodiments, the parameters of the fifth transistor 221 and the sixth transistor 222 are the same. The "parameters" here may include the type, model, hardware parameters (for example, current amplification gain) of the transistor, etc. In other possible embodiments, the fifth transistor 221 and the sixth transistor 222 are the same size. The "size" here can be understood as the package size of the transistor (for example, the length of the transistor, the aspect ratio, etc.). Therefore, the fifth transistor 221 and the sixth transistor 222 in this embodiment are two identical transistors, so that the tuning module 20 has better symmetry. Therefore, when the tuning module 20 is applied in the RF front-end module 100, even if the tuning module 20 is reversed, it will not affect the normal operation of the tuning module 20. In addition, the same size of the fifth transistor 221 and the sixth transistor 222 can also make the two transistors more compact and balanced in the hardware layout.

[0064] As a possible implementation, referring to FIG. 13 , the fifth transistor 221 and the sixth transistor 222 are both diodes D, the first signal terminal 2210 of the fifth transistor 221 and the first signal terminal 2220 of the sixth transistor 222 serve as the anode of the diode D, and the second signal terminal 2212 of the fifth transistor 221 and the second signal terminal 2222 of the sixth transistor 222 serve as the cathode of the diode D. Therefore, in this embodiment, the two diodes D are connected in opposite directions. When a radio frequency signal passes through the two diodes D, a self-bias voltage is generated. This self-bias voltage causes the two diodes D to conduct in turn, so that the total current after the currents in the two diodes D are superimposed generates a second signal with a phase opposite to that of the radio frequency signal. This second signal can suppress harmonic signals in the radio frequency signal.

[0065] As another possible embodiment, referring to FIG. 14 , the fifth transistor 221 and the sixth transistor 222 are both metal oxide semiconductor field effect transistors (MOSFETs). The first signal terminal 2210 of the fifth transistor 221 and the first signal terminal 2220 of the sixth transistor 222 serve as the drain D of the MOSFETs. The second signal terminal 2212 of the fifth transistor 221 and the second signal terminal 2222 of the sixth transistor 222 serve as the source S of the MOSFETs. The gate G of the MOSFETs is connected to the source S. Because the gate G and source S of the MOSFETs are connected, the MOSFETs can be equivalent to a diode. Furthermore, the two MOSFETs are connected in opposite directions. When an RF signal passes through the two MOSFETs, a self-bias voltage is generated. This self-bias voltage causes the two MOSFETs to conduct in turn, so that the total current after the currents in the two MOSFETs are superimposed generates a second signal with a phase opposite to that of the RF signal. This second signal can suppress harmonic signals in the RF signal.

[0066] An embodiment of the present application provides a radio frequency front-end module 100, which may include a switch module 10 and a tuning module 20 connected in series with the switch module 10. The tuning module 20 has a first port 210 and a second port 230. The first port 210 is connected to the switch module 10, and the second port 230 is used to output a radio frequency signal after harmonic suppression by the tuning module 20. The tuning module 20 is configured to generate a second signal having a phase opposite to that of the first signal, where the first signal refers to a harmonic signal in the radio frequency signal input by the first port 210.

[0067] When a radio frequency signal is input to the first port 210, the tuning module 20 generates a second signal with a phase opposite to that of the harmonics in the radio frequency signal to cancel the harmonics. Because the second signal has a wide frequency range, for example, it can cover the entire sub-3 GHz frequency band, it can cancel harmonics across a wide frequency range, achieving broadband suppression.

[0068] Referring to Figure 15 , an embodiment of the present application also provides a radio frequency front-end module 400. This module integrates two or more discrete components, such as a radio frequency switch, a low-noise amplifier, a filter, a duplexer, and a power amplifier, into a single module, thereby improving integration and hardware performance while miniaturizing the module. Specifically, the module can be used in 4G and 5G communication devices, such as smartphones, tablets, and smartwatches.

[0069] In this embodiment, the RF front-end module 400 may include a substrate 40 and a designated chip 50. The designated chip 50 is disposed on the substrate 40 and integrates a switch module 60 and a tuning module 70 connected in series with the switch module 60. The tuning module 70 has a first port 710 and a second port 730. The first port 710 is connected to the switch module 60, and the second port 730 is used to output the RF signal after harmonic suppression by the tuning module 70. The tuning module 70 is configured to generate a second signal with a phase opposite to that of the first signal, where the first signal refers to a harmonic signal in the RF signal input by the first port 710.

[0070] When an RF signal is input to the first port 710, the tuning module 70 generates a second signal with a phase opposite to the harmonics in the RF signal to cancel the harmonics. Because the second signal has a wide frequency range, for example, it can cover the entire sub-3 GHz frequency band, it can cancel harmonics across a wide frequency range, achieving broadband suppression.

[0071] Furthermore, since the switch module 60 and the tuning module 70 are integrated into the same chip (i.e., designated chip 50), the integration of the RF front-end module 400 can be improved. Since the tuning module 70 can achieve the effect of harmonic suppression, there is no need to set up an additional LC resonant circuit (e.g., a chip capacitor), thereby eliminating the need for peripheral circuit suppression. On the one hand, the tuning module 70 can be enabled to suppress harmonic signals with a wider frequency (e.g., a harmonic signal with a frequency band of 900MHz to 2600MHz); on the other hand, the tuning module 70 can be enabled to suppress harmonic signals in RF signals with higher power, for example, the power of the RF signal input to the switch module 60 can be greater than or equal to 30dBm.

[0072] The following is a detailed introduction to each unit in the RF front-end module 400.

[0073] In this embodiment, the substrate 40 is generally rectangular and serves to securely support components (e.g., the designated chip 50) within the RF front-end module 400. Specifically, the substrate 40 may be a copper-clad laminate. Circuits may be printed on the surface of the substrate 40 by performing processes such as hole processing, electroless copper plating, electrolytic copper plating, and etching on the copper-clad laminate. In some possible embodiments, the substrate 40 may be provided with an antenna port 410 for connecting an external antenna.

[0074] The designated chip 50 is provided on the substrate 40. For example, the designated chip 50 can be attached to the substrate 40, or can be soldered to the surface of the substrate 40 by a welding process (for example, soldering). In this embodiment, the designated chip 50 is integrated with a switch module 60 and a tuning module 70 connected in series with the switch module 60. The features of the switch module 60 and the tuning module 70 can refer to and follow the features of the switch module 10 and the tuning module 20 in the above embodiment, respectively. To save space, they are not described here one by one. Similarly, in the absence of conflict, the switch module 10 and the tuning module 20 in the above embodiment can also respectively have the features of the switch module 60 and the tuning module 70 in this embodiment, and the features of the two embodiments can be combined with each other.

[0075] Since the switch module 60 and the tuning module 70 in this embodiment are both integrated in the designated chip 50, the integration of the RF front-end module 400 can be improved. In addition, since the tuning module 70 can achieve the effect of harmonic suppression, there is no need to set up an additional LC resonant circuit (for example, a chip capacitor), and thus the suppression of the peripheral circuit can be omitted. On the one hand, the tuning module 70 can be enabled to suppress harmonic signals with a wider frequency (for example, harmonic signals with a frequency band of 900MHz to 2600MHz); on the other hand, the tuning module 70 can be enabled to suppress harmonic signals in RF signals with higher power, for example, the power of the RF signal input to the switch module can be greater than or equal to 30dBm. Furthermore, since there is no need to set up an additional LC resonant circuit in the RF front-end module 400, the layout space of the RF front-end module 400 can be saved, which is conducive to the miniaturization design of the RF front-end module 400.

[0076] In some possible embodiments, the designated chip 50 may be a silicon-on-insulator (SOI) chip. For example, when the transistor switches in the switch module 60 are all MOSFETs, and the transistors in the tuning module 70 are all MOSFETs, the SOI chip can be designed more simply and at a lower cost.

[0077] In some possible embodiments, the switch module 60 can be an antenna switch, the first port 710 of the tuning module 70 is connected to the antenna switch, and the second port 730 of the tuning module 70 is connected to the antenna port 410. The tuning module 70 is used to suppress the harmonic signal in the RF signal output via the antenna switch. Therefore, when there is a harmonic signal in the RF signal output by the antenna switch, the tuning module 70 can first suppress the harmonic signal before outputting it to the antenna port 410, thereby ensuring the linearity of the RF signal output by the RF front-end module 400. Specifically, when the antenna standing wave ratio (Voltage Standing Wave Ratio, VSWR) is equal to 1:1, that is, when the impedance of the feeder and the antenna is completely matched, the tuning module 70 can suppress the harmonic signal in the RF signal with higher power. For example, the power of the RF signal input to the antenna switch can be greater than or equal to 40dBm.

[0078] In other possible embodiments, please refer to Figure 16, the RF front-end module 400 may also include a back-end module 80, which is arranged on the substrate 40 and is used to process the RF signal. In this embodiment, the switch module 60 can be a frequency band selection switch, the first port 710 of the tuning module 70 is connected to the frequency band selection switch, and the second port 730 of the tuning module 70 is connected to the back-end module 80. The tuning module 70 is used to suppress the harmonic signal in the RF signal output via the frequency band selection switch. Therefore, when there is a harmonic signal in the RF signal output by the frequency band selection switch, the tuning module 70 can first suppress the harmonic signal and then output it to the back-end module 80, thereby ensuring the linearity of the RF signal.

[0079] As an embodiment, when the band select switch is located in the transmit path (TX) of the RF front-end module 400, the subsequent module 80 can be a filter (e.g., a duplexer), which can further filter out harmonic signals in the RF signal. As another embodiment, when the band select switch is located in the receive path (RX) of the RF front-end module 400, the subsequent module 80 can be a low-noise amplifier, which is used to amplify the amplitude of the RF signal and reduce noise interference.

[0080] In this embodiment, the RF front-end module 400 may further include an amplifier chip 90, which is disposed on the substrate 40, and the switch module 60 is connected between the signal output terminal 910 of the amplifier chip 90 and the tuning module 70. As an embodiment, when the amplifier chip 90 is located in the transmit path (TX) of the RF front-end module 400, the amplifier chip 90 may be integrated with a power amplifier (e.g., a differential amplifier, a push-pull amplifier, etc.), which is used to amplify the power of the RF signal input to the amplifier chip 90. As another embodiment, when the amplifier chip 90 is located in the receive path (RX) of the RF front-end module 400, the amplifier chip 90 may be integrated with a low-noise amplifier, which is used to amplify the amplitude of the RF signal and reduce noise interference. Specifically, the amplifier chip 90 may be a heterojunction bipolar transistor chip (HBT chip), a complementary metal oxide semiconductor chip (CMOS chip), etc., and this embodiment does not specifically limit this.

[0081] The embodiment of the present application also provides a radio frequency front-end module 400, which may include a substrate 40 and a designated chip 50. The designated chip 50 is disposed on the substrate 40, and the designated chip 50 integrates a switch module 60 and a tuning module 70 connected in series with the switch module 60. The tuning module 70 has a first port 710 and a second port 730, wherein the first port 710 is connected to the switch module 60, and the second port 730 is used to output a radio frequency signal after harmonic suppression by the tuning module 70; the tuning module 70 is configured to generate a second signal having a phase opposite to that of the first signal, wherein the first signal refers to a harmonic signal in the radio frequency signal input by the first port 710.

[0082] When an RF signal is input to the first port 710, the tuning module 70 generates a second signal with a phase opposite to the harmonics in the RF signal to cancel the harmonics. Because the second signal has a wide frequency range, for example, it can cover the entire sub-3 GHz frequency band, it can cancel harmonics across a wide frequency range, achieving broadband suppression.

[0083] Furthermore, since the switch module 60 and the tuning module 70 are integrated into the same chip (i.e., designated chip 50), the integration of the RF front-end module 400 can be improved. In addition, since the tuning module 70 can achieve the effect of harmonic suppression, there is no need to set up an additional LC resonant circuit (e.g., a chip capacitor), thereby eliminating the need for peripheral circuit suppression. On the one hand, the tuning module 70 can be enabled to suppress harmonic signals with a wider frequency (e.g., a harmonic signal with a frequency band of 900MHz to 2600MHz); on the other hand, the tuning module 70 can be enabled to suppress harmonic signals in RF signals with higher power, for example, the power of the RF signal input to the switch module 60 can be greater than or equal to 30dBm.

[0084] In the specification of this application, certain words are used to refer to specific components in the specification and claims. Those skilled in the art should understand that hardware manufacturers may use different terms to refer to the same pair of components. The specification and claims do not use the difference in name as a way to distinguish components, but use the difference in function of the components as the criterion for distinction. For example, "including" mentioned throughout the specification and claims is an open term and should be interpreted as "including but not limited to"; "substantially" means that those skilled in the art can solve technical problems within a certain error range and basically achieve technical effects.

[0085] In the description of this application, it should be understood that the terms "upper", "lower", "front", "back", "left", "right", "inside", etc. indicating directions or positional relationships are based on the directions or positional relationships shown in the accompanying drawings. They are only used to simplify the description for the convenience of describing this application, and do not indicate or imply that the device or element referred to must have a specific direction, be constructed and operated in a specific direction. Therefore, they should not be understood as limitations on this application.

[0086] In this application, unless otherwise expressly specified or limited, terms such as "mounted," "connected," "connect," and "fixed" should be interpreted broadly. For example, these terms may refer to fixed, removable, or integral connections; mechanical or electrical connections; direct or indirect connections through an intermediary; internal communication between two components; or mere surface contact. Those skilled in the art will understand the specific meanings of these terms in this application based on the specific circumstances.

[0087] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art can combine and combine different embodiments or examples described in this specification and features of different embodiments or examples without contradiction.

[0088] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of the technical features being referred to. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of such features. Throughout the description of this application, "plurality" means at least two, for example, two, three, etc., unless otherwise specifically defined.

[0089] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A radio frequency front-end module, characterized in that: include: Switch module; as well as A tuning module connected in series with the switch module, the tuning module having a first port and a second port, the first port being connected to the switch module, the second port being used to output a radio frequency signal after harmonic suppression via the tuning module; the tuning module being configured to generate a second signal having a phase opposite to that of the first signal, the first signal being a harmonic signal in the radio frequency signal input by the first port.

2. The RF front-end module according to claim 1, characterized in that: An absolute value of a phase difference between the second signal and a harmonic signal in the radio frequency signal is greater than or equal to 170 degrees and less than or equal to 190 degrees.

3. The RF front-end module according to claim 1, characterized in that: The tuning module also has a control port, and the control port is configured to input a bias control signal; the tuning module includes a first transistor, a second transistor and a first resistance unit; The first signal terminal of the first transistor is connected to the first port, the second signal terminal of the first transistor is connected to the second signal terminal of the second transistor, and the first signal terminal of the second transistor is connected to the second port; One end of the first resistance unit is connected to the control port, and the other end of the first resistance unit is connected to a common end of the first transistor and the second transistor.

4. The RF front-end module according to claim 3, characterized in that: The first transistor and the second transistor have the same parameters; or / and The first transistor and the second transistor have the same size.

5. The RF front-end module according to claim 4, characterized in that: The first transistor and the second transistor are both diodes, the first signal terminal is the anode of the diode, and the second signal terminal is the cathode of the diode; or The first transistor and the second transistor are both bipolar junction transistors, the first signal terminal is the collector of the bipolar junction transistor, the second signal terminal is the emitter of the bipolar junction transistor, and the base of the bipolar junction transistor is connected to the collector; or The first transistor and the second transistor are both metal oxide semiconductor field effect transistors, the first signal terminal is a drain of the metal oxide semiconductor field effect transistor, the second signal terminal is a source of the metal oxide semiconductor field effect transistor, and the gate of the metal oxide semiconductor field effect transistor is connected to the drain; or The first transistor and the second transistor are both metal oxide semiconductor field effect transistors, the first signal terminal is the source of the metal oxide semiconductor field effect transistor, the second signal terminal is the drain of the metal oxide semiconductor field effect transistor, and the gate of the metal oxide semiconductor field effect transistor is A pole is connected to the source; or The first transistor and the second transistor are both metal oxide semiconductor field effect transistors, the first signal end is the source of the metal oxide semiconductor field effect transistor, the second signal end is the gate of the metal oxide semiconductor field effect transistor, and the drain of the metal oxide semiconductor field effect transistor is connected to the source.

6. The RF front-end module according to claim 3, characterized in that: The equivalent resistance value of the first resistance unit is greater than or equal to 1 kilo-ohm.

7. The RF front-end module according to claim 1, characterized in that: The tuning module includes a third transistor, a fourth transistor, a second resistance unit and a third resistance unit; One end of the second resistance unit and the third resistance unit connected in series is connected to the first port, and the other end is connected to the second port; The first signal end of the third transistor and the first signal end of the fourth transistor are both connected to a common end of the second resistance unit and the third resistance unit; The second signal terminal of the third transistor is connected to the first port, and the second signal terminal of the fourth transistor is connected to the second port.

8. The RF front-end module according to claim 7, characterized in that: The second resistance unit and the third resistance unit have the same equivalent resistance value; The parameters of the third transistor and the fourth transistor are the same; or / and the sizes of the third transistor and the fourth transistor are the same.

9. The RF front-end module according to claim 8, characterized in that: The third transistor and the fourth transistor are both diodes, the first signal end is the anode of the diode, and the second signal end is the cathode of the diode; or The third transistor and the fourth transistor are both metal oxide semiconductor field effect transistors, the first signal end is the drain of the metal oxide semiconductor field effect transistor, the second signal end is the source of the metal oxide semiconductor field effect transistor, and the gate of the metal oxide semiconductor field effect transistor is connected to the source.

10. The RF front-end module according to claim 7, characterized in that: The tuning module further includes a fourth resistance unit and a fifth resistance unit; One end of the fourth resistance unit, the second resistance unit, the third resistance unit and the fifth resistance unit connected in series is connected to the first port, and the other end is connected to the second port; The second signal terminal of the third transistor is connected to the common terminal of the fourth resistor unit and the second resistor unit, and the second signal terminal of the fourth transistor is connected to the common terminal of the third resistor unit and the fifth resistor unit; The fourth resistance unit and the fifth resistance unit have the same equivalent resistance value.

11. The RF front-end module according to claim 1, characterized in that: The tuning module includes a fifth transistor, a sixth transistor, a sixth resistor unit and a seventh resistor unit; The first signal terminal of the fifth transistor is connected to the second signal terminal of the sixth transistor to form a first common terminal; the first common terminal is connected to the first port through the sixth resistor unit; The second signal terminal of the fifth transistor is connected to the first signal terminal of the sixth transistor to form a second common terminal; The second common terminal is connected to the second port through the seventh resistor unit.

12. The RF front-end module according to claim 11, characterized in that: At least one of the parameters or dimensions of the fifth transistor and the sixth transistor is the same; The equivalent resistance values ​​of the sixth resistance unit and the seventh resistance unit are the same.

13. The RF front-end module according to claim 12, characterized in that: The fifth transistor and the sixth transistor are both diodes, the first signal terminal is the anode of the diode, and the second signal terminal is the cathode of the diode; or The fifth transistor and the sixth transistor are both metal oxide semiconductor field effect transistors, the first signal terminal is the drain of the metal oxide semiconductor field effect transistor, the second signal terminal is the source of the metal oxide semiconductor field effect transistor, and the gate of the metal oxide semiconductor field effect transistor is connected to the source.

14. A radio frequency front-end module, characterized in that: include: substrate; as well as Specify chip; The designated chip is arranged on the substrate, and is integrated with a switch module and a tuning module connected in series with the switch module; The tuning module has a first port and a second port, the first port is connected to the switch module, and the second port is used to output the radio frequency signal after harmonic suppression through the tuning module; the tuning module is configured to: generate a second signal with a phase opposite to the first signal, and the first signal refers to the harmonic signal in the radio frequency signal input by the first port.

15. The RF front-end module according to claim 14, characterized in that: The substrate is provided with an antenna port; the switch module is an antenna switch, the first port of the tuning module is connected to the antenna switch, the second port of the tuning module is connected to the antenna port, and the tuning module is used to suppress harmonic signals in the radio frequency signal output via the antenna switch.

16. The RF front-end module according to claim 14, characterized in that: The switch module is a frequency band selection switch, the first port of the tuning module is connected to the frequency band selection switch, the second port of the tuning module is used to connect to a subsequent module, and the tuning module is used to suppress harmonic signals in the radio frequency signal output via the frequency band selection switch.

17. The RF front-end module according to claim 14, characterized in that: The RF front-end module also includes an amplifier chip disposed on the substrate; The switch module is connected between the signal output end of the amplifier chip and the tuning module.

18. The radio frequency front-end module according to claim 14, characterized in that: The designated chip is a silicon-on-insulator chip.

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