Method for manufacturing semiconductor device, semiconductor device, and sealing material

Abstract

Disclosed is a method for suppressing the occurrence of cracks in a thinning process of a silicon wafer. In this method, first, a sealing material 50 is molded by compression molding to the extent that upper end parts 40a of bumps 40 are exposed on a surface 20a side of a silicon wafer 20 on which the bumps 40 are provided. It is preferable that a granule sealing material, for example, is used as the sealing material 50. After the sealing material is molded, the rear surface (surface on the reverse side from the bumps 40) of the silicon wafer 20 is ground by grinding or the like to thin the silicon wafer so that the thickness thereof becomes 30 µm or less. Since the silicon wafer is reinforced using the sealing material before the thinning process, as described above, the occurrence of cracks can be suppressed during the manufacturing of a semiconductor device.

Description

Semiconductor device manufacturing method, semiconductor device, and encapsulant

[0001] The present disclosure relates to a method for manufacturing a semiconductor device, a semiconductor device, and an encapsulant.

[0002] Non-Patent Document 1 discloses a method for thinning a semiconductor wafer.

[0003] N.Deb et. al, “Ultra-thin mold cap for Advanced Packaging Technology, 2022 IEEE 72nd Electronic Components and Technology Conference(ECTC), 2022

[0004] In a conventional method for thinning a semiconductor wafer, for example, as shown in Figures 5(a) to 5(e), a silicon wafer 120 having bumps 140 on one side is first thinned by grinding and polishing. Then, a sealant 150 is provided on the thinned silicon wafer 120 to reinforce the wafer during transport. However, with this thinning method, when the sealant 150 is molded onto the silicon wafer 120 using a compression mold or the like, the underlying silicon wafer 120 is weak and may crack.

[0005] An object of the present disclosure is to provide a semiconductor device manufacturing method capable of suppressing cracking of a thin semiconductor wafer, a semiconductor device, and an encapsulant used therein.

[0006] [1] One aspect of the present disclosure relates to a method for manufacturing a semiconductor device, the method comprising the steps of: preparing a semiconductor member including a semiconductor wafer having a first surface and an opposite second surface and a plurality of bumps provided on the first surface of the semiconductor wafer; providing a sealant on the first surface of the semiconductor wafer so that at least some of the bumps are exposed; and, after the sealant providing step, grinding the second surface of the semiconductor wafer to thin the semiconductor wafer.

[0007] In this semiconductor device manufacturing method, a sealing material is applied to the first surface of the semiconductor wafer so that at least a portion of the plurality of bumps are exposed, and after the sealing material is applied, the second surface of the semiconductor wafer is ground to thin the semiconductor wafer. In this case, since the semiconductor wafer is reinforced with the sealing material before thinning, it is possible to suppress cracks in the semiconductor device or the semiconductor wafer when manufacturing a thin semiconductor device.

[0008] [2] In the method for manufacturing a semiconductor device according to [1] above, in the step of thinning the semiconductor wafer, it is preferable to thin the thickness of the semiconductor wafer to 50 μm or less. In this case, a thin semiconductor device can be obtained.

[0009] [3] In the method for manufacturing a semiconductor device according to [1] above, in the step of thinning the semiconductor wafer, the thickness of the semiconductor wafer may be thinned to 8 μm or less. In this case, an even thinner semiconductor device can be obtained. In addition, in this case, if the semiconductor wafer is a silicon wafer, a thickness of 5 μm or equivalent of SiO ２ It is also possible to have a semiconductor device consisting of only layers.

[0010] [4] In the semiconductor device manufacturing method according to any one of [1] to [3] above, in the step of thinning the semiconductor wafer, the thickness of the semiconductor wafer may be made thinner than the height of the bumps. The thickness of the semiconductor wafer and the height of the bumps are usually about the same, but in this semiconductor device manufacturing method, the encapsulant is used as a pre-reinforcing material, so the semiconductor wafer can be processed to be thinner than usual. Therefore, this method allows for the production of thin semiconductor devices.

[0011] [5] In the method for manufacturing a semiconductor device according to any one of [1] to [4] above, in the step of thinning the semiconductor wafer, the thickness of the semiconductor wafer may be made thinner than the thickness of the encapsulant. In this case, a thin semiconductor device can be obtained.

[0012] [6] In the method for manufacturing a semiconductor device according to any one of the above [1] to [5], in the step of providing a sealing material, sealing is preferably performed so that the thickness of the sealing material is equal to or less than the height of the bumps.

[0013] [7] In the method for manufacturing a semiconductor device according to any one of [1] to [6] above, in the step of providing the encapsulant, the encapsulant may be molded onto the first surface of the semiconductor wafer by compression molding. In this case, the internal stress in the molded encapsulant becomes more uniform, and warpage of the semiconductor device due to non-uniform internal stress can be suppressed.

[0014] [8] In any of the semiconductor device manufacturing methods described in [1] to [7] above, the encapsulant preferably has a visible light transmittance of 50% or more. When cutting a semiconductor wafer into individual pieces with a dicer, the streets (areas to be cut) on the semiconductor wafer are confirmed using a microscope using visible light before cutting. Therefore, by using an encapsulant with a visible light transmittance of 50% or more, it is possible to confirm the streets in the same manner as conventional methods and perform cutting with a dicer. Note that when the streets are confirmed using a device using ultraviolet light, the encapsulant preferably has an ultraviolet light transmittance of 50% or more.

[0015] [9] In the method for manufacturing a semiconductor device according to any one of [1] to [8] above, the encapsulant may be a resin material containing a filler, and the cut size of the filler may be 10 μm or less. In this case, the transmittance of the encapsulant can be improved, and therefore, it is possible to check the street through the encapsulant and perform cutting with a dicer in the same manner as in the conventional method.

[0016]

[10] In the method for manufacturing a semiconductor device according to any one of [1] to [9] above, the method may further include a step of dividing the thinned semiconductor member into individual pieces after the thinning step. In this case, individual semiconductor devices can be obtained.

[0017]

[11] Another aspect of the present disclosure relates to a semiconductor device. The semiconductor device includes a semiconductor substrate having a first surface and an opposite second surface, a plurality of bumps provided on the first surface of the semiconductor substrate, and an encapsulating resin portion provided on the first surface of the semiconductor substrate so that at least a portion of the plurality of bumps are exposed. In this semiconductor device, the thickness of the semiconductor substrate is 30 μm or less, and the thickness of the encapsulating resin portion is 30 μm or less.

[0018] In this semiconductor device, the thickness of the semiconductor substrate is 30 μm or less, allowing for a thin structure, while the thickness of the sealing resin portion is 30 μm or less, sufficiently suppressing cracks that may occur in the thin semiconductor substrate. Thus, with this semiconductor device, cracks can be suppressed even in a thin semiconductor substrate.

[0019]

[12] In the semiconductor device of

[11] above, the thickness of the semiconductor substrate may be thinner than the thickness of the sealing resin portion. In this case, a thinner semiconductor device can be obtained.

[0020]

[13] In the semiconductor device of

[11] or

[12] above, the encapsulating resin portion may have a visible light transmittance of 50% or more, which makes the bumps on the semiconductor device visible, facilitating visual inspection of the bumps and the like.

[0021]

[14] In the semiconductor device according to any one of

[11] to

[13] above, the cut size of the filler contained in the encapsulating resin layer may be 10 μm or less. In this case, the bumps on the semiconductor device can be visually confirmed, and therefore, visual inspection of the bumps and the like can be easily performed.

[0022]

[15] In yet another aspect, the present disclosure relates to an encapsulant. This encapsulant is used in any of the above-described methods for manufacturing semiconductor devices, and contains at least a resin composition. This encapsulant has a visible light transmittance of 50% or more. In this case, it is possible to check the streets through the encapsulant in a conventional manner and perform cutting with a dicer. Furthermore, when the semiconductor wafer is singulated into individual semiconductor devices, bumps on the singulated semiconductor wafer are visible, facilitating visual inspection of the bumps, etc.

[0023]

[16] The encapsulant of

[15] may further contain a filler, and the cut size of the filler may be 10 μm or less. In this case, the transmittance of the encapsulant can be more reliably improved.

[0024] According to the present disclosure, cracks in thin semiconductor wafers can be suppressed.

[0025] FIG. 1 is a schematic cross-sectional view showing an example of a cross-sectional configuration of a semiconductor device according to an embodiment of the present disclosure. (a) to (c) of FIG. 2 are cross-sectional views sequentially showing a method for manufacturing the semiconductor device shown in FIG. 1. (a) to (c) of FIG. 3 are cross-sectional views sequentially showing a method for manufacturing the semiconductor device shown in FIG. 1, showing a step performed after the step shown in FIG. 2(c). FIG. 4 is a cross-sectional view showing a method for manufacturing the semiconductor device shown in FIG. 1 (a singulation step), showing a step performed after the step shown in FIG. 3(c). (a) to (e) of FIG. 5 are cross-sectional views showing an example of a method for thinning a semiconductor wafer.

[0026] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. In the following description, identical or equivalent parts will be designated by the same reference numerals, and duplicate explanations will be omitted. Furthermore, unless otherwise specified, positional relationships such as up, down, left, and right will be based on the positional relationships shown in the drawings. Furthermore, the dimensional ratios of the drawings are not limited to those shown in the drawings.

[0027] In this specification, the term "layer" includes not only a structure having a shape formed over the entire surface when observed in a plan view, but also a structure having a shape formed on a portion thereof. In this specification, the term "process" includes not only an independent process, but also a process that cannot be clearly distinguished from other processes as long as the intended effect of the process is achieved.

[0028] In this specification, numerical ranges indicated using "to" indicate ranges that include the numerical values ​​before and after "to" as the minimum and maximum values, respectively. In numerical ranges described in stages in this specification, the upper or lower limit of a numerical range in one stage may be replaced with the upper or lower limit of a numerical range in another stage. In numerical ranges described in this specification, the upper or lower limit of the numerical range may be replaced with a value shown in the examples.

[0029] FIG. 1 is a schematic cross-sectional view showing an example of a cross-sectional configuration of a semiconductor device manufactured by a manufacturing method according to an embodiment of the present disclosure. As shown in FIG. 1, the semiconductor device 1 has a semiconductor substrate 2, a rewiring layer 3, a plurality of bumps 4, and an encapsulating resin portion 5. The semiconductor substrate 2 corresponds to, for example, a silicon wafer described later, and a large number of semiconductor elements (not shown) are provided within the semiconductor substrate 2. The semiconductor substrate 2 has a first surface 2a and a second surface 2b on the opposite side, and the second surface 2b side is thinned by a thinning process of the silicon wafer described later. The semiconductor substrate 2 has a thickness of, for example, 50 μm or less, and may have a thickness of 30 μm or less. The semiconductor substrate 2 is made of SiO ２ The semiconductor substrate 2 may be configured to have only a layer, in which case the thickness may be 8 μm or less, or may be 5 μm or less. The semiconductor substrate 2 may have a rectangular shape in plan view.

[0030] The redistribution layer 3 (RDL) is a layer having an insulating portion and wiring (e.g., copper wiring) formed in the insulating portion, and is configured to connect the semiconductor elements provided on the semiconductor substrate 2 to the bumps 4. The redistribution layer 3 widens the pitch between the terminals on the semiconductor substrate 2 to the pitch between the bumps 4.

[0031] Each bump 4 is a connection terminal for connecting the semiconductor device 1 to a mounting substrate or the like. Each bump 4 is provided on the first surface 2a of the semiconductor substrate 2, and more specifically, on the rewiring layer 3. Each bump 4 is a spherical conductive member made of, for example, solder or copper. The height (outer diameter) of each bump 4 may be, for example, 70 μm or less, or 50 μm or less.

[0032] The encapsulating resin portion 5 is a reinforcing material provided on the first surface 2a side of the semiconductor substrate 2 by molding a resin material such as an encapsulant. The encapsulating resin portion 5 has a thickness of, for example, 50 μm or less, and may have a thickness of 30 μm or less, or may have a thickness of 20 μm or less. The encapsulating resin portion 5 is formed so as to expose at least the upper end portions 4a (parts) of the bumps 4, and may have a thickness less than the height of the bumps 4. The encapsulating resin portion 5 may have a thickness equal to or less than half the height of the bumps 4.

[0033] The material that constitutes the sealing resin portion 5 includes a sealing resin composition, for example, an epoxy resin.

[0034] The resin composition constituting the encapsulating resin portion 5 may contain a filler. The cut size of the filler may be 10 μm or less, or may be 5 μm or less. Because the cut diameter of the filler is so small, the encapsulating resin portion 5 has excellent visibility from the outside, and for example, the visible light transmittance may be 50% or more, or may be 70% or more. The resin composition constituting the encapsulating resin portion 5 may be a granular encapsulant, and in this case, the encapsulating resin portion 5 may be formed by molding using a compression mold. The encapsulating resin portion 5 may have an ultraviolet light transmittance of 50% or more, or may be 70% or more.

[0035] Next, a method for manufacturing the semiconductor device shown in Fig. 1 will be described with reference to Fig. 2 to Fig. 4. Fig. 2(a) to Fig. 2(c) are cross-sectional views sequentially showing the method for manufacturing the semiconductor device shown in Fig. 1. Fig. 3(a) to Fig. 3(c) are cross-sectional views sequentially showing the method for manufacturing the semiconductor device shown in Fig. 1, showing the steps performed after the step shown in Fig. 2(c). Fig. 4 is a cross-sectional view showing the method for manufacturing the semiconductor device shown in Fig. 1 (the step of singulating), showing the steps performed after the step shown in Fig. 3(c).

[0036] First, a semiconductor member 10 is prepared as shown in FIG. 2(a). The semiconductor member 10 includes a semiconductor wafer 20 having a first surface 20a and an opposite second surface 20b, a rewiring layer 30 provided on the first surface 20a of the semiconductor wafer 20, and a plurality of bumps 40 provided on the first surface 30a of the rewiring layer 30 on the first surface 20a side of the semiconductor wafer 20. The semiconductor wafer 20, the rewiring layer 30, and the bumps 40 correspond to the semiconductor substrate 2, the rewiring layer 3, and the bumps 4, respectively, in the semiconductor device 1 shown in FIG. 1. The semiconductor wafer 20 is, for example, a disk-shaped silicon wafer. The semiconductor wafer 20 may also be rectangular. The semiconductor wafer 20 shown in FIG. 2(a) is a semiconductor wafer before thinning processing, and has a thickness of 725 μm in the case of a 200 mm (8 inch) diameter wafer, and a thickness of 775 μm in the case of a 300 mm diameter wafer. Thus, the semiconductor wafer 20 has a thickness of 700 μm or more.

[0037] A redistribution layer 30 is formed on the first surface 20a of the semiconductor wafer 20. The redistribution layer 30 is formed, for example, by a conventional method, and includes an insulating portion and wiring within the insulating portion. A plurality of bumps 40 made of solder or the like are provided on the first surface 30a of the redistribution layer 30. Each bump 40 is made of, for example, solder or copper. The height (outer diameter) of each bump 40 may be, for example, 70 μm or less, or 50 μm or less. Conventional methods can be used to fabricate the semiconductor wafer 20, the redistribution layer 30, and the plurality of bumps 40, and therefore, a description thereof will be omitted here.

[0038] Once the semiconductor component 10 is formed, as shown in FIG. 2B , an encapsulant 50 is provided on the first surface 20a of the semiconductor wafer 20. Specifically, the encapsulant 50 is molded onto the first surface 30a of the redistribution layer 30 on the semiconductor wafer 20. The encapsulant 50 may be formed to have a thickness of, for example, 50 μm or less, 30 μm or less, or 20 μm or less. The encapsulant 50 may be formed to expose at least the upper end portions 40a (parts) of the bumps 40, or may be formed to have a thickness less than the height of the bumps 40 and equal to or less than half the height of the bumps 40.

[0039] Such an encapsulant 50 includes an encapsulating resin composition, such as an epoxy resin. The encapsulant 50 may include a filler. The cut size of the filler may be 10 μm or less, or may be 5 μm or less. Because the cut diameter of the filler is so short, the encapsulant 50 has excellent visibility, and may have a visible light transmittance of 50% or more, or 70% or more, for example. The encapsulant 50 may be a granular encapsulant. In this case, the encapsulant 50 may be molded using a compression mold. The encapsulant 50 may have an ultraviolet light transmittance of 50% or more, or may have an ultraviolet light transmittance of 70% or more. When the encapsulant 50 includes a curable material, after the encapsulant 50 is formed on the semiconductor wafer 20, a process for curing the encapsulant 50 is performed.

[0040] After the sealing material 50 is formed, as shown in Fig. 2C, the periphery of the semiconductor member 10 (semiconductor wafer 20) is trimmed by a cutting member 60. As a result, the periphery of the semiconductor wafer 20 in the semiconductor member 10 is cut away.

[0041] After the trimming is completed, as shown in FIG. 3( a), the back surface of the semiconductor member 10 (the second surface 20b of the semiconductor wafer 20) is ground by a grinding device 61 to thin the semiconductor wafer 20 before grinding into the ground semiconductor wafer 21. The semiconductor wafer 20 may be ground while rotating the grinding device 61. The semiconductor wafer 20 is thinned by such grinding. The thickness of the thinned semiconductor wafer 21 is, for example, 50 μm or less, or may be 30 μm or less, 20 μm or less, 10 μm or less, 8 μm or less, or 5 μm or less. When the thickness of the thinned semiconductor wafer 21 is 8 μm or less or 5 μm or less, the semiconductor wafer 21, which is a silicon wafer, is made of SiO ２ When a semiconductor wafer is thinned to such a thickness, cracks are usually likely to occur in the semiconductor wafer, but in the manufacturing method according to this embodiment, sealing material 50 is provided as a reinforcing material on the first surface 20 a side of semiconductor wafers 20 and 21 before thinning, thereby suppressing such cracks.

[0042] After grinding by the grinding device 61 is completed, the second surface 21b of the semiconductor wafer 21 in the thinned semiconductor member 10A may be polished by CMP using a polishing pad 62 and a polishing liquid (not shown), as shown in Fig. 3(b). Various methods can be used for polishing by CMP. In this manner, the semiconductor device 10B shown in Fig. 3(c) can be obtained.

[0043] The semiconductor device 10B thus fabricated may be further attached to a dicing tape 63 as shown in FIG. 4 and singulated into the semiconductor devices 1 shown in FIG. 1 . In this case, cutting is performed using a dicer 64 along streets (cutting regions) provided on the first surface 21 a of the semiconductor wafer 21. During this singulation, alignment marks may be provided on the back side of the semiconductor device 10B (e.g., the encapsulant 50), and the singulation may be performed using these alignment marks as a reference. If the encapsulant 50 is made of an optically transparent material (e.g., a transparent material), the streets provided on the front surface of the semiconductor wafer 21 may be directly read and singulated. When reading the streets, the streets on the first surface 21 a of the semiconductor wafer 21 may be read using a microscope using visible light, as is commonly used in dicers, and dicing may be performed based on this information. The method for singulating the semiconductor device 10B is not limited to dicing using a dicer; for example, a UV laser may also be used. In this case, the semiconductor devices 10B may be separated into individual pieces using a UV laser with a wavelength in the 355 μm band.

[0044] Here, the effects of the semiconductor device manufacturing method according to this embodiment will be described in comparison with the method shown in FIG. 5 . In the method shown in FIG. 5 , a semiconductor member 110 is prepared as shown in FIG. 5 (a). The semiconductor member 110 corresponds to the semiconductor member 10 described above and includes a semiconductor wafer 120, a redistribution layer 130, a plurality of bumps 140, and an encapsulant 150. Once the semiconductor member 110 is prepared, as shown in FIGS. 5 (b), (c), and (d), it is subjected to trimming using a cutting member 60, grinding using a grinding device 61, and CMP using a polishing pad 62 or the like before being reinforced with an encapsulant. This thins the semiconductor wafer 120 in the semiconductor member 110, resulting in a semiconductor member 111 having a semiconductor wafer 121. Then, an encapsulant 150 is formed on the surface of the thinned semiconductor wafer 121 by molding or the like. Semiconductor devices are then formed by singulation. However, when the sealing material 150 is formed by a compression mold or the like, the underlying semiconductor wafer 121 is weak and may crack. Also, when the sealing material 150 is provided using a sheet-like sealing material or a similar reinforcing material instead of a compression mold, the SiO ２ The difference in thermal expansion coefficient between the semiconductor wafers 120 and 121 and the sealing material 150 may cause warping of the semiconductor device.

[0045] In contrast, in the method for manufacturing a semiconductor device according to this embodiment, a sealing material 50 is first provided on the first surface 20a of the semiconductor wafer 20 so that at least a portion (upper portions) of the plurality of bumps 40 are exposed. Then, after the sealing material 50 is provided, the second surface 20b of the semiconductor wafer 20 is ground or polished to thin the semiconductor wafer 20. In this way, since the semiconductor wafer 20 is reinforced with the sealing material 50 before the thinning process, it is possible to suppress the occurrence of cracks in the thin semiconductor device 1 or semiconductor wafer 21.

[0046] In the semiconductor device manufacturing method according to this embodiment, when thinning the semiconductor wafer 20, the thickness of the semiconductor wafers 20, 21 may be thinned to 50 μm or less, or may be thinned to 8 μm or less. This makes it possible to obtain a thin semiconductor device 1. When thinning the semiconductor wafer, the thickness of the semiconductor wafers 20, 21 may be thinner than the height of the bumps 40, or thinner than the thickness of the encapsulant 50.

[0047] In the method for manufacturing a semiconductor device according to this embodiment, when providing the sealing material, it is preferable to provide the sealing material 50 so that its thickness is equal to or less than the height of the plurality of bumps 40 .

[0048] In the semiconductor device manufacturing method according to this embodiment, when providing the encapsulant, the encapsulant 50 may be molded by compression molding onto the first surface 20a of the semiconductor wafers 20, 21. In this case, the internal stress within the molded encapsulant 50 becomes more uniform, and warpage due to non-uniform internal stress can be suppressed.

[0049] In the semiconductor device manufacturing method according to this embodiment, the encapsulant 50 preferably has a visible light transmittance of 50% or more. When the semiconductor wafers 20, 21 are cut into individual pieces using a dicer 64, the streets on the semiconductor wafers are confirmed using a microscope that uses visible light before the cutting is performed. Therefore, by using an encapsulant 50 having a visible light transmittance of 50% or more, it is possible to confirm the streets and perform the cutting with a dicer in the same manner as in the conventional method.

[0050] In the semiconductor device manufacturing method according to this embodiment, the encapsulant 50 may be a resin material containing a filler, and the cut size of the filler may be 10 μm or less. In this case, the transmittance of the encapsulant 50 can be improved, and therefore, it becomes possible to check the streets through the encapsulant and perform cutting with a dicer in the same manner as in the conventional method.

[0051] Although the embodiments of the present disclosure have been described above, the present invention is not limited to the above-described embodiments, and appropriate modifications may be made without departing from the spirit of the present disclosure.

[0052] 1...semiconductor device, 2...semiconductor substrate, 2a...first surface, 2b...second surface, 4...bump, 5...encapsulating resin part, 10, 10A...semiconductor member, 10B...semiconductor device, 20, 21...semiconductor wafer, 20a...first surface, 20b...second surface, 40...bump, 40a...upper end portion, 50...encapsulating material.

Claims

1. A method for manufacturing a semiconductor device, comprising the steps of: preparing a semiconductor component having a semiconductor wafer having a first surface and an opposite second surface, and a plurality of bumps provided on the first surface of the semiconductor wafer; providing a sealant on the first surface of the semiconductor wafer so that at least a portion of the plurality of bumps are exposed; and, after the sealant providing step, grinding the second surface of the semiconductor wafer to thin the semiconductor wafer.

2. The method for manufacturing a semiconductor device according to claim 1, wherein in the step of thinning the semiconductor wafer, the thickness of the semiconductor wafer is thinned to 50 μm or less.

3. The method for manufacturing a semiconductor device according to claim 1, wherein in the step of thinning the semiconductor wafer, the thickness of the semiconductor wafer is thinned to 8 μm or less.

4. The method for manufacturing a semiconductor device according to any one of claims 1 to 3, wherein in the step of thinning the semiconductor wafer, the thickness of the semiconductor wafer is made thinner than the height of the bumps.

5. The method for manufacturing a semiconductor device according to any one of claims 1 to 4, wherein in the step of thinning the semiconductor wafer, the thickness of the semiconductor wafer is made thinner than the thickness of the sealing material.

6. The method for manufacturing a semiconductor device according to claim 1, wherein in the step of providing a sealing material, sealing is performed so that the thickness of the sealing material is equal to or less than the height of the plurality of bumps.

7. The method for manufacturing a semiconductor device according to claim 1, wherein in the step of providing the sealing material, the sealing material is molded onto the first surface of the semiconductor wafer by compression molding.

8. The method for manufacturing a semiconductor device according to any one of claims 1 to 7, wherein the sealing material has a visible light transmittance of 50% or more.

9. The method for manufacturing a semiconductor device according to any one of claims 1 to 8, wherein the sealing material is a resin material containing a filler, and a cut size of the filler is 10 μm or less.

10. The method for producing a semiconductor device according to any one of claims 1 to 9, further comprising the step of dividing the thinned semiconductor member into individual pieces after the thinning step.

11. A semiconductor device comprising: a semiconductor substrate having a first surface and an opposite second surface; a plurality of bumps provided on the first surface side of the semiconductor substrate; and an encapsulating resin portion provided on the first surface side of the semiconductor substrate so that at least a portion of the plurality of bumps are exposed, wherein the semiconductor substrate has a thickness of 30 μm or less, and the encapsulating resin portion has a thickness of 30 μm or less.

12. The semiconductor device according to claim 11, wherein the thickness of the semiconductor substrate is thinner than the thickness of the sealing resin portion.

13. The semiconductor device according to claim 11 or 12, wherein the sealing resin portion has a visible light transmittance of 50% or more.

14. The semiconductor device according to any one of claims 11 to 13, wherein a cut size of the filler contained in the sealing resin portion is 10 μm or less.

15. An encapsulant for use in the method for producing a semiconductor device according to any one of claims 1 to 10, comprising at least a resin composition and having a visible light transmittance of 50% or more.

16. The encapsulant according to claim 15, further comprising a filler, the cut size of the filler being 10 μm or less.

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