Testing system and method for plasma properties in reaction chamber and storage medium

Abstract

A testing system for plasma properties in a reaction chamber, a processing device for a semiconductor device, a testing method for plasma properties in a reaction chamber, and a computer-readable storage medium. The testing system comprises: at least two sampling paths (121, 122), used for respectively collecting voltage signals of a top cover (14) of a reaction chamber; a voltage processing module (123) which is connected to the second sampling path (122), shifts the phase of the voltage signal thereof by 180° to obtain a second voltage signal, and adds the second voltage signal to a first voltage signal of an original phase on the first sampling path (121) to obtain a third voltage signal having alternating-current noise filtered out; and a testing module (124) which is connected to the voltage processing module (123) to acquire the third voltage signal, and determines plasma properties in the reaction chamber on the basis of the third voltage signal. Alternating-current noise in the voltage of the top cover (14) of the reaction chamber can be filtered out, thereby improving the accuracy of the plasma property testing result.

Description

Detection system, detection method and storage medium for plasma characteristics in reaction chamber Technical Field

[0001] The present invention relates to the field of semiconductor processing technology, and in particular to a system for detecting plasma characteristics in a reaction chamber, a semiconductor device processing device, a method for detecting plasma characteristics in a reaction chamber, and a computer-readable storage medium. Background Art

[0002] During the thin film deposition process, radio frequency electrodes are used to generate high-frequency electric fields to provide energy to excite plasma. In order to avoid particle deposition and improve the production capacity of the thin film deposition process, the reactor top cover is generally used as a radio frequency electrode in this field, and an AC-driven electric heating wire is arranged inside it to promote the thin film deposition reaction. However, due to the direct contact between the metal armor on the surface of the heating wire and the top cover, AC signal coupling will be generated on the surface of the reactor top cover, resulting in a certain amount of AC noise in the DC bias voltage signal collected by the reactor top cover, which will seriously affect the accuracy of the detection of plasma characteristics in the reactor through voltage detection.

[0003] In order to overcome the above-mentioned defects of the prior art, there is an urgent need in the art for an improved detection system for plasma characteristics in a reaction chamber, which is used to filter out AC noise in the voltage on the top cover of the reaction chamber to improve the accuracy of the plasma characteristic detection results.

[0004] Summary of the Invention

[0005] The following is a brief summary of one or more aspects to provide a basic understanding of these aspects. This summary is not an exhaustive overview of all conceivable aspects and is neither intended to identify key or critical elements of all aspects nor to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed description that will be provided later.

[0006] To overcome the above-mentioned deficiencies in the prior art, the present invention provides a system for detecting plasma characteristics in a reaction chamber, a semiconductor device processing device, a method for detecting plasma characteristics in a reaction chamber, and a computer-readable storage medium, which can effectively filter out AC noise in the voltage on the top cover of the reaction chamber, thereby improving the accuracy of the plasma characteristic detection results.

[0007] Specifically, the detection system for the plasma characteristics in the reaction chamber provided in accordance with the first aspect of the present invention includes at least two sampling pathways, a voltage processing module and a detection module. The at least two sampling pathways are used to respectively collect the voltage signals of the top cover of the reaction chamber. The top cover is used as a radio frequency electrode for exciting plasma in the reaction chamber and contacts an AC-driven heating wire. The voltage processing module is connected to the second sampling pathway, shifts the phase of its voltage signal by 180° to obtain a second voltage signal, and adds the second voltage signal to the first voltage signal of the original phase on the first sampling pathway to obtain a third voltage signal from which AC noise is filtered out. The detection module is connected to the voltage processing module to obtain the third voltage signal, and determines the plasma characteristics in the reaction chamber based on the third voltage signal.

[0008] Furthermore, in some embodiments of the present invention, the voltage processing module includes an odd number of inverting circuits configured to shift the phase of the voltage signal on the second sampling path by 180° to obtain the second voltage signal. Alternatively, the voltage processing module includes multiple phase shifting circuits configured to stepwise shift the phase of the voltage signal on the second sampling path, thereby shifting the phase of the voltage signal on the second sampling path by 180° to obtain the second voltage signal.

[0009] Furthermore, in some embodiments of the present invention, the voltage processing module includes two phase shift circuits, wherein the two phase shift circuits respectively shift the phase of the voltage signal on the second sampling path by 90 degrees to obtain the second voltage signal.

[0010] Furthermore, in some embodiments of the present invention, the voltage processing module further includes a signal superposition circuit. A first input of the signal superposition circuit is connected to an output of the first sampling path to obtain a first voltage signal of the original phase. A second input of the signal superposition circuit is connected to an output of the inverting circuit or the multiple phase shifting circuits to obtain a second voltage signal. An output of the signal superposition circuit is connected to the detection module to output a third voltage signal from which AC noise has been filtered.

[0011] Furthermore, in some embodiments of the present invention, the voltage processing module further includes a voltage reduction circuit. The output of the signal superposition circuit is connected to the detection module via the voltage reduction circuit. The voltage reduction circuit reduces the amplitude of the third voltage signal by ½ to obtain a fourth voltage signal representing the DC voltage on the top cover, and transmits the fourth voltage signal to the detection module. The detection module determines the plasma characteristics within the reaction chamber based on the fourth voltage signal.

[0012] Furthermore, in some embodiments of the present invention, the voltage processing module further includes a first voltage sensor. An input of the first voltage sensor is connected to an output of the voltage processing module. An output of the first voltage sensor is connected to an input of the detection module, and the first voltage sensor is configured to perform analog-to-digital conversion on the third voltage signal and transmit the converted third voltage data to the detection module, so that the detection module can determine the plasma characteristics within the reaction chamber based on the voltage data.

[0013] Furthermore, in some embodiments of the present invention, the voltage processing module further includes a second voltage sensor and a third voltage sensor. The input end of the second voltage sensor is connected to the output end of the first sampling path. The output end of the second voltage sensor is connected to the input end of the detection module for performing analog-to-digital conversion on the first voltage signal and transmitting the converted first voltage data to the detection module. The input end of the third voltage sensor is connected to the output end of the inverting circuit or the multiple phase shift circuits. The output end of the third voltage sensor is connected to the input end of the detection module for performing analog-to-digital conversion on the second voltage signal and transmitting the converted second voltage data to the detection module, so that the detection module can sum the first voltage data and the second voltage data to determine the corresponding third voltage data, and determine the plasma characteristics in the reaction chamber based on the third voltage data.

[0014] In addition, the processing equipment of the above-mentioned semiconductor device provided according to the second aspect of the present invention includes a reaction chamber, the heating wire, a detection system for the plasma characteristics in the reaction chamber provided by the first aspect of the present invention, and a radio frequency drive circuit. The reaction chamber includes a top cover. The top cover is used as an radio frequency electrode and contacts the AC-driven heating wire. The heating wire is connected to the AC drive circuit and is used to heat the reaction chamber to promote the vapor deposition reaction of the semiconductor processing. The detection system is used to obtain a voltage signal from the top cover that filters out the AC noise, and to determine the plasma characteristics in the reaction chamber based on the voltage signal. The radio frequency drive circuit is connected to the top cover and the detection system, and is used to drive the top cover to excite plasma in the reaction chamber based on the detection result of the plasma characteristics to promote the vapor deposition reaction of the semiconductor processing.

[0015] Furthermore, according to a third aspect of the present invention, the method for detecting plasma characteristics in the reaction chamber includes the following steps: collecting voltage signals from a top cover of the reaction chamber via two sampling paths, respectively, wherein the top cover serves as a radio frequency electrode for exciting plasma in the reaction chamber; phase-shifting the voltage signal of the second sampling path by 180° to obtain a second voltage signal; adding the second voltage signal to the first voltage signal of the first sampling path at the original phase to obtain a third voltage signal from which AC noise has been filtered; and determining the plasma characteristics in the reaction chamber based on the third voltage signal.

[0016] Furthermore, the computer-readable storage medium provided in accordance with the fourth aspect of the present invention stores computer instructions, which, when executed by a processor, implement the semiconductor defect detection method provided in accordance with the third aspect of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The above features and advantages of the present invention will be better understood after reading the detailed description of the embodiments of the present disclosure in conjunction with the following drawings. In the drawings, the components are not necessarily drawn to scale, and components with similar related properties or characteristics may have the same or similar reference numerals.

[0018] FIG1 shows a schematic structural diagram of a semiconductor device processing device according to some embodiments of the present invention.

[0019] FIG2 shows a circuit topology diagram of a voltage processing module according to some embodiments of the present invention.

[0020] FIG3 shows a schematic flow chart of a method for detecting plasma characteristics in a reaction chamber according to some embodiments of the present invention.

[0021] FIG4 shows a phase curve diagram at nodes VF1 and VF2 according to some embodiments of the present invention.

[0022] FIG5 shows a circuit topology diagram of a voltage processing module according to some embodiments of the present invention.

[0023] FIG6 shows a schematic structural diagram of semiconductor device processing equipment provided according to some embodiments of the present invention.

[0024] Reference Signs 11 Heating filament 12, 62 Detection system for plasma characteristics in reaction chamber 121 First sampling path 122 Second sampling path 123 Voltage processing module 124 Detection module 125 Voltage sensor 13 RF drive circuit 14 Top cover 15 AC drive circuit 21 Inverter circuit 22, 52 Signal superposition circuit 23, 53 Voltage restoration circuit 511, 512 Phase shift circuit 621 First sampling path 622 Second sampling path 623 Voltage processing module 624 Detection modules 625, 626 Voltage sensor DETAILED DESCRIPTION

[0025] The following specific embodiments illustrate the embodiments of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. Although the description of the present invention will be introduced in conjunction with the preferred embodiment, this does not mean that the features of this invention are limited to this embodiment. On the contrary, the purpose of introducing the invention in conjunction with the embodiment is to cover other options or modifications that may be extended based on the claims of the present invention. In order to provide a deep understanding of the present invention, the following description will include many specific details. The present invention can also be implemented without using these details. In addition, in order to avoid confusion or blurring the focus of the present invention, some specific details will be omitted in the description.

[0026] In the description of the present invention, it should be noted that, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" should be understood in a broad sense. For example, they may refer to fixed, detachable, or integral connections; mechanical or electrical connections; direct or indirect connections through an intermediate medium; and internal communication between two components. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on the specific circumstances.

[0027] Furthermore, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," and "vertical" used in the following description should be understood to refer to the orientations depicted in that section and the accompanying drawings. These relative terms are used solely for convenience of description and do not necessarily imply that the devices described herein must be manufactured or operated in a specific orientation. Therefore, they should not be construed as limiting the present invention.

[0028] It will be understood that although the terms "first," "second," "third," etc. may be used herein to describe various components, regions, layers, and / or portions, these components, regions, layers, and / or portions should not be limited by these terms, and these terms are merely used to distinguish different components, regions, layers, and / or portions. Thus, a first component, region, layer, and / or portion discussed below may be referred to as a second component, region, layer, and / or portion without departing from some embodiments of the present invention.

[0029] As mentioned above, the direct contact between the metal armor on the surface of the heating wire and the top cover will cause AC signal coupling on the surface of the reaction chamber top cover, resulting in a certain amount of AC noise in the voltage signal collected by the reaction chamber top cover, which will seriously affect the accuracy of detecting the plasma characteristics in the reaction chamber through voltage detection.

[0030] To overcome the above-mentioned deficiencies in the prior art, the present invention provides a system for detecting plasma characteristics in a reaction chamber, a semiconductor device processing device, a method for detecting plasma characteristics in a reaction chamber, and a computer-readable storage medium, which can effectively filter out AC noise in the voltage on the top cover of the reaction chamber, thereby improving the accuracy of the plasma characteristic detection results.

[0031] In some non-limiting embodiments, the method for detecting plasma characteristics within a reaction chamber provided in the third aspect of the present invention can be implemented via the system for detecting plasma characteristics within a reaction chamber provided in the first aspect of the present invention. Specifically, the detection system can be configured in the semiconductor device processing equipment provided in the second aspect of the present invention, which is equipped with a memory and a processor. The memory includes, but is not limited to, the computer-readable storage medium provided in the fourth aspect of the present invention, which stores computer instructions. When executed by the processor, the method for detecting plasma characteristics within a reaction chamber provided in the third aspect of the present invention is implemented, thereby enabling detection of plasma characteristics within the reaction chamber via the semiconductor device processing equipment.

[0032] First, please refer to FIG. 1 , which shows a schematic structural diagram of a semiconductor device processing device provided according to some embodiments of the present invention.

[0033] In the embodiment shown in FIG1 , the processing equipment for the semiconductor device provided by the present invention includes a reaction chamber, a heating wire 11, a detection system 12 for detecting the plasma characteristics in the reaction chamber, and a radio frequency drive circuit 13. Here, the reaction chamber includes a top cover 14. The top cover 14 is used as a radio frequency electrode and contacts the AC-driven heating wire 11. The heating wire 11 is connected to the AC drive circuit 15 for heating the reaction chamber to promote the vapor deposition reaction of the semiconductor processing. The detection system 12 for detecting the plasma characteristics in the reaction chamber is used to obtain a voltage signal from the top cover 14 that filters out the AC noise, and to determine the plasma characteristics in the reaction chamber based on the voltage signal. The radio frequency drive circuit 13 is connected to the top cover 14 and the detection system 12, and is used to drive the top cover 14 to excite plasma in the reaction chamber based on the detection results of the plasma characteristics to promote the vapor deposition reaction of the semiconductor processing.

[0034] Furthermore, the detection system 12 for the plasma characteristics in the reaction chamber provided by the present invention includes at least two sampling paths 121-122, a voltage processing module 123 and a detection module 124. The at least two sampling paths 121-122 are used to respectively collect voltage signals from the top cover 14 of the reaction chamber. The voltage processing module 123 is connected to the second sampling path 122, and its voltage signal is phase-shifted by 180° to obtain a second voltage signal. The second voltage signal is added to the first voltage signal of the original phase on the first sampling path 121 to obtain a third voltage signal from which AC noise is filtered. The detection module 124 is connected to the voltage processing module 123 to obtain a third voltage signal, and determines the plasma characteristics in the reaction chamber based on the third voltage signal.

[0035] Please refer to FIG. 2 for details, which shows a circuit topology diagram of a voltage processing module according to some embodiments of the present invention.

[0036] In the embodiment shown in FIG2 , the voltage processing module 123 may include an odd number (including but not limited to 1, 3, or 5) of inverting circuits 21, signal superposition circuits 22, and voltage restoration circuits 23. The inverting circuit 21 is composed of a first signal amplifier ICP1 and associated resistors R1, R2, and R4, and a capacitor C1, and is used to shift the voltage signal on the second sampling path 122 by 180° to obtain a second voltage signal. The signal superposition circuit 22 is composed of a second signal amplifier ICP2 and associated resistors R3, R5, and R6. Its first input terminal is connected to the output terminal of the first sampling path 121 to obtain the first voltage signal of the original phase, and its second input terminal is connected to the output terminal of the inverting circuit 21 to obtain the inverted second voltage signal. The inverting circuit 21 is used to superimpose the first and second voltage signals, and outputs a third voltage signal after superposition and AC noise filtering to the voltage restoration circuit 23 via its output terminal. The voltage reduction circuit 23 is composed of a third signal amplifier ICP3 and related resistors R8 and R9. Its input end is connected to the output end of the signal superposition circuit 22, and its output end is connected to the rear-end detection module 124. It is used to reduce the acquired third voltage signal by 1 / 2 to obtain a fourth voltage signal representing the DC voltage on the top cover 14, and transmit the fourth voltage signal to the detection module 124 so that it can determine the plasma characteristics in the reaction chamber based on the fourth voltage signal.

[0037] Those skilled in the art will understand that the circuit topology architecture including the voltage reduction circuit 23 shown in FIG2 is only a non-limiting implementation method provided by the present invention, which is intended to clearly demonstrate the main concept of the present invention and provide a specific solution that is easy for the public to implement, rather than to limit the scope of protection of the present invention.

[0038] Optionally, in other embodiments, those skilled in the art may also directly connect the output end of the signal superposition circuit 22 to the back-end detection module 124, which can perform voltage reduction or data conversion on the acquired third voltage signal to achieve the same purpose of determining the plasma characteristics in the reaction chamber.

[0039] Furthermore, in the embodiments shown in Figures 1 and 2, the voltage processing module 123 preferably also includes a DC bias voltage sensor (DC bias sensor) 125. This voltage sensor 125 has a large equivalent resistance (e.g., R7 = 1MΩ), an input end of which is connected to the output end of the voltage processing module 123, and an output end of which is connected to the input end of the detection module 124. The voltage sensor 125 is used to perform analog-to-digital conversion on the third voltage signal or the fourth voltage signal output by the front end, and transmit the converted voltage data to the detection module 124 for determining the plasma characteristics in the reaction chamber based on the voltage data. By first filtering out AC noise in the top cover voltage through the voltage processing module 123 and then transmitting the filtered DC bias voltage signal to the voltage sensor 125, the present invention can effectively avoid AC noise interference on the voltage sensor 125, thereby improving the safety and service life of the voltage sensor 125 and the back-end detection module 124, and simultaneously improving the accuracy of the plasma characteristic detection results.

[0040] The following will describe the working principles of the semiconductor device processing equipment and the detection system for plasma characteristics in the reaction chamber in conjunction with some embodiments of the detection method for plasma characteristics in the reaction chamber. Those skilled in the art will understand that these detection method embodiments are only some non-limiting implementation methods provided by the present invention, and are intended to clearly demonstrate the main concept of the present invention and provide some specific solutions that are convenient for the public to implement, rather than to limit the full functions or all working modes of the processing equipment and detection system. Similarly, the processing equipment and detection system are also only some non-limiting implementation methods provided by the present invention, and do not constitute a limitation on the execution subject or execution order of the various steps in these detection methods.

[0041] Please refer to Figures 1 to 4. Figure 3 shows a schematic flow chart of a method for detecting plasma characteristics in a reaction chamber according to some embodiments of the present invention. Figure 4 shows a phase curve diagram at the VF1 and VF2 nodes according to some embodiments of the present invention.

[0042] As shown in Figures 1-3, during the detection of plasma characteristics within the reaction chamber, the detection system can first collect the original voltage signal from the top cover 14 of the reaction chamber via two sampling paths 121-122, respectively. The voltage signal on the second sampling path 122 is then phase-shifted by 180° via an odd number of inverting circuits 21 configured in the second sampling path 122 to obtain a second voltage signal VF2 as shown in Figure 4. The detection system can then add this second voltage signal to the original phase first voltage signal VF1 on the first sampling path 121, as shown in Figure 4, via the signal superposition circuit 22 shown in Figure 2 to obtain a third voltage signal from which AC noise has been filtered out. This third voltage signal is then preferably input into a voltage restoration circuit 23 to obtain a fourth voltage signal with half the amplitude. The detection system can then obtain the output third or fourth voltage signal via the back-end detection module 124 and determine the plasma characteristics within the reaction chamber based on the obtained third or fourth voltage signal.

[0043] Furthermore, in order to verify the effectiveness of the detection system for plasma characteristics in the reaction chamber provided by the present invention in filtering out AC noise, the present invention also performs circuit simulation and voltage monitoring on each circuit node in the voltage processing module 123 shown in FIG. 2 .

[0044] Specifically, by applying a -30V DC voltage to the voltage source VG1 shown in FIG2 and adding an AC noise interference with a frequency of 50Hz and an amplitude of 100V, the actual sine waves measured at the VF1 and VF2 terminals of the voltage processing module 123 composed of the inverting circuit 21 have equal amplitudes and a phase difference of 179.51°, and an AC noise signal with an amplitude of 300mV will be measured at the VF4 terminal.

[0045] To further enhance the inversion capability of the voltage processing module 123 and thus improve the AC filtering capability, in some embodiments of the present invention, at least one inverter circuit in the voltage processing module 123 may be replaced with multiple phase shifting circuits. These multiple phase shifting circuits can stepwise shift the phase of the voltage signal on the second sampling path 122, shifting the original voltage signal on the second sampling path 122 by 180 degrees to obtain a second voltage signal.

[0046] Please refer to FIG. 5 for details, which shows a circuit topology diagram of a voltage processing module according to some embodiments of the present invention.

[0047] In the embodiment shown in FIG5 , the voltage processing module 123 may include two phase shift circuits 511-512 and a signal superposition circuit 52. Both phase shift circuits 511-512 are 90° phase shift circuits, each configured to shift the voltage signal on the second sampling path 122 by 90°, thereby obtaining a second voltage signal with a phase shift of 180° at the rear end of the two phase shift circuits 511-512. The first input of the signal superposition circuit 52 is connected to the output of the first sampling path 121 to obtain the first voltage signal with the original phase, while the second input of the signal superposition circuit 52 is connected to the output of the two phase shift circuits 511-512 to obtain the second voltage signal with a phase shift of 180°. The first and second voltage signals are superimposed to output a third voltage signal filtered of AC noise via the output of the signal superposition circuit 52.

[0048] Furthermore, the voltage processing module 123 may also preferably include a voltage restoration circuit 53. The input end of the voltage restoration circuit 53 is connected to the output end of the signal superposition circuit 52, and is configured to obtain the third voltage signal from the signal superposition circuit 52 after filtering out the AC noise, reduce the amplitude of the third voltage signal by 1 / 2 to obtain a fourth voltage signal representing the DC voltage on the top cover 14, and transmit the fourth voltage signal to the back-end detection module 124 for the detection module 124 to determine the plasma characteristics in the reaction chamber based on the fourth voltage signal.

[0049] Similarly, in order to verify the effect of filtering out AC noise in the detection system for plasma characteristics in the reaction chamber provided by the present invention, the present invention also performed circuit simulation and voltage monitoring on each circuit node in the voltage processing module 123 shown in Figure 5. By applying a -30V DC voltage to the voltage source VG1 shown in Figure 5 and adding AC noise interference with a frequency of 50Hz and an amplitude of 100V, the actual sine wave amplitudes measured at the VF1 and VF5 terminals of the voltage processing module 123 composed of multiple phase adjustment circuits 511-512 are equal, the phase difference is close to 180°, and an AC noise signal with an amplitude of less than 1.55mV is measured at the VF4 terminal. Therefore, the voltage processing module 123 composed of multiple phase adjustment circuits 511-512 provided by the present invention can achieve an improved AC noise filtering effect, thereby further improving the accuracy of the plasma characteristic detection results.

[0050] Those skilled in the art will understand that the detection system 12 shown in Figure 1, in which the voltage processing module 123 first filters out the AC noise in the top cover voltage and then the voltage sensor 125 collects the DC bias voltage from which the AC noise has been filtered out, is only a non-restrictive implementation method provided by the present invention, which is intended to clearly demonstrate the main concept of the present invention and provide a specific solution that is easy for the public to implement, rather than to limit the scope of protection of the present invention.

[0051] Optionally, in the embodiment shown in FIG6 , the detection system 62 for detecting the plasma characteristics in the reaction chamber provided by the present invention includes at least two sampling paths 621-622, a voltage processing module 623, and a detection module 624. The at least two sampling paths 621-622 are used to respectively collect voltage signals from the top cover 14 of the reaction chamber. The voltage processing module 623 is connected to the second sampling path 622 and shifts its voltage signal by 180° to obtain a second voltage signal. The second voltage signal is added to the first voltage signal of the original phase on the first sampling path 621 to obtain a third voltage signal from which AC noise is filtered out. The detection module 624 is connected to the voltage processing module 623 to obtain a third voltage signal and, based on the third voltage signal, determines the plasma characteristics in the reaction chamber.

[0052] Furthermore, the voltage processing module 623 may include a DC bias voltage sensor 625 and a DC bias voltage sensor 626. Here, the input end of the voltage sensor 625 may be connected to the output end of the first sampling path 621, and the output end thereof may be connected to the input end of the detection module 624, for performing analog-to-digital conversion on the first voltage signal and transmitting the converted first voltage data to the detection module 624. The input end of the voltage sensor 626 may be connected to the output end of the aforementioned inverting circuit 21 or the output end of the aforementioned multiple phase shift circuits 511-512, and the output end thereof may be connected to the input end of the detection module 624, for performing analog-to-digital conversion on the second voltage signal and transmitting the converted second voltage data to the detection module 624. Afterwards, the detection module 624 can perform software summation on the acquired first voltage data and second voltage data to determine the third voltage data with AC noise filtered out, and determine the plasma characteristics in the reaction chamber based on the third voltage data to avoid the need for the above-mentioned superposition circuit 22 and reduction circuit 23, thereby reducing the hardware cost of the detection system, achieving miniaturization and lightweight design, and reducing the safety risks brought about by design defects of hardware equipment such as circuits.

[0053] In summary, the above-mentioned system for detecting plasma characteristics in a reaction chamber, semiconductor device processing equipment, method for detecting plasma characteristics in a reaction chamber, and computer-readable storage medium provided by the present invention can each collect the voltage of the reaction chamber top cover through two sampling paths, maintain the original phase of the voltage signal of one sampling path, and shift the phase of the voltage signal of the other sampling path by 180 degrees. The output voltages of the two sampling paths are then superimposed to filter out AC noise therein, thereby detecting the plasma characteristics in the reaction chamber and improving the accuracy of the plasma characteristic detection results.

[0054] Although the above methods are illustrated and described as a series of acts for simplicity of explanation, it is to be understood and appreciated that these methods are not limited by the order of the acts, as some acts may occur in a different order and / or concurrently with other acts from those illustrated and described herein or not illustrated and described herein but understandable to those skilled in the art according to one or more embodiments.

[0055] The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A system for detecting plasma characteristics in a reaction chamber, characterized in that: include: At least two sampling paths for respectively collecting voltage signals of a top cover of the reaction chamber, wherein the top cover is used as a radio frequency electrode for exciting plasma in the reaction chamber and contacts an AC-driven heating wire; a voltage processing module connected to the second sampling path, shifting the phase of its voltage signal by 180° to obtain a second voltage signal, and adding the second voltage signal to the first voltage signal of the original phase on the first sampling path to obtain a third voltage signal with AC noise filtered out; and The detection module is connected to the voltage processing module to obtain the third voltage signal and determine the plasma characteristics in the reaction chamber according to the third voltage signal.

2. The detection system according to claim 1, characterized in that: The voltage processing module includes an odd number of inverting circuits for shifting the voltage signal on the second sampling path by 180° to obtain the second voltage signal, or The voltage processing module includes a plurality of phase shift circuits, wherein the plurality of phase shift circuits change the phase of the voltage signal on the second sampling path in stages, and shift the phase of the voltage signal on the second sampling path by 180° to obtain the second voltage signal.

3. The detection system according to claim 2, characterized in that: The voltage processing module includes two phase shift circuits, wherein the two phase shift circuits respectively shift the phase of the voltage signal on the second sampling path by 90° to obtain the second voltage signal.

4. The detection system according to claim 2, characterized in that: The voltage processing module also includes a signal superposition circuit, wherein a first input end of the signal superposition circuit is connected to an output end of the first sampling path to obtain a first voltage signal of the original phase, a second input end of the signal superposition circuit is connected to an output end of the inverting circuit or the multiple phase shift circuits to obtain the second voltage signal, and an output end of the signal superposition circuit is connected to the detection module to output a third voltage signal from which AC noise is filtered out.

5. The detection system according to claim 4, characterized in that: The voltage processing module also includes a voltage restoration circuit, wherein the output end of the signal superposition circuit is connected to the detection module via the voltage restoration circuit, the voltage restoration circuit reduces the third voltage signal by 1 / 2 to obtain a fourth voltage signal to characterize the DC voltage on the top cover, and transmits the fourth voltage signal to the detection module, and the detection module determines the plasma characteristics in the reaction chamber according to the fourth voltage signal.

6. The detection system according to claim 2, characterized in that: The voltage processing module also includes: A first voltage sensor, wherein the input end of the first voltage sensor is connected to the output end of the voltage processing module, and the output end of the first voltage sensor is connected to the input end of the detection module, for performing analog-to-digital conversion on the third voltage signal, and transmitting the converted third voltage data to the detection module, so that the detection module can determine the plasma characteristics in the reaction chamber according to the voltage data.

7. The detection system according to claim 2, characterized in that: The voltage processing module also includes: a second voltage sensor, wherein an input end of the second voltage sensor is connected to an output end of the first sampling path, and an output end of the second voltage sensor is connected to an input end of the detection module, for performing analog-to-digital conversion on the first voltage signal and transmitting the converted first voltage data to the detection module; and A third voltage sensor, wherein the input end of the third voltage sensor is connected to the output end of the inverting circuit or the multiple phase shift circuits, and the output end of the third voltage sensor is connected to the input end of the detection module, for performing analog-to-digital conversion on the second voltage signal, and transmitting the converted second voltage data to the detection module, so that the detection module sums the first voltage data and the second voltage data to determine the corresponding third voltage data, and determines the plasma characteristics in the reaction chamber according to the third voltage data.

8. A semiconductor device processing equipment, characterized in that: include: A reaction chamber including a top cover, wherein the top cover is used as a radio frequency electrode and contacts an AC driven heating wire; The heating wire is connected to an AC driving circuit and is used to heat the reaction chamber to promote a vapor deposition reaction in semiconductor processing; The system for detecting plasma characteristics in a reaction chamber according to any one of claims 1 to 7, which is used to obtain a voltage signal with AC noise filtered out from the top cover, and determine the plasma characteristics in the reaction chamber according to the voltage signal; and A radio frequency driving circuit is connected to the top cover and the detection system, and is used to drive the top cover to excite plasma in the reaction chamber according to the detection result of the plasma characteristic, so as to promote the vapor deposition reaction of the semiconductor processing.

9. A method for detecting plasma characteristics in a reaction chamber, characterized in that: The following steps are involved: The voltage signals of the top cover of the reaction chamber are collected respectively through two sampling paths, wherein the top cover is used as a radio frequency electrode for exciting plasma in the reaction chamber; Shifting the phase of the voltage signal of the second sampling path by 180° to obtain a second voltage signal; Adding the second voltage signal to the first voltage signal of the original phase on the first sampling path to obtain a third voltage signal with AC noise filtered out; and The plasma characteristics in the reaction chamber are determined according to the third voltage signal.

10. A computer-readable storage medium having computer instructions stored thereon, characterized in that: When the computer instructions are executed by the processor, the method for detecting the plasma characteristics in the reaction chamber as claimed in claim 9 is implemented.

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