Method for producing high performance cutting and / or forming tools with high-rate deposition of hipims deposited tin based coatings

Abstract

The present invention relates to a method for coating of substrates, especially substrates of the type cutting or forming tools, wherein the substrate is coated with at least one titanium nitride based layer deposited by using HiPIMS techniques adapted in such a manner that an exceptional high deposition rate and coating quality is attained. The coating process involving the deposition of a TiN coating layer comprising alloying chemical elements onto the substrate surface by using a magnetron sputtering process of the type HiPIMS, with power densities greater than 100 W / cm2, wherein one or more targets having chemical element composition in atomic concentration of Tia'Me1b'Me2c are used as cathode during deposition, and wherein the TiN coating layer comprising alloying elements having a chemical element composition in atomic concentration of TixMe1yMe2zNdCe, where: o Me1 is one or more chemical elements, wherein Me1 is selected fulfilling the condition that if a target consisting of Me1 is used instead of a target consisting of Ti under application of the same coating process parameters, in particular same power density at the target and same nitrogen partial pressure, the discharge current produced by using the target consisting of Me1 is at least 30% lower than the discharge current produced by using the target consisting of Ti, o Me2 is one or both chemical elements selected from Si and B, o a+b+c = 1, 0.50 < a ≤ 0.95, 0.05 ≤ b+c < 0.50, 0 < b ≤ 0.30, 0 ≤ c ≤ 0.30, o x+y+z = 1, 0.50 < x ≤ 0.99, 0.01 ≤ y+z < 0.50, 0 ≤ y ≤ 0.30, preferably 0 < y ≤ 0.30, 0 ≤ z ≤ 0.30, o d+e = 1, 0.5 ≤ d ≤ 1, 0 ≤ e ≤ 0.5 o the sum of the contents of Ti, Me1 and Me2 is normalized to a total concentration 1, and the sum of the contents of N and C is normalized to total concentration of 1.

Description

[0001] Method for producing high performance cutting and / or forming tools with high-rate deposition of HiPIMS deposited TIN based coatings

[0002] The present invention relates to a method for coating of substrates, especially substrates of the type cutting or forming tools, in particular forming and cutting taps, more in particular forming dies, wherein the substrate is coated with at least one titanium nitride based layer deposited by using HiPIMS techniques adapted in such a manner that an exceptional high deposition rate and coating quality is attained.

[0003] TiN and TiCN based coatings are widely known to be used for applications where substrate surface has to be protected against abrasive and adhesive wear, for example for forming tools, as well as for threading tools like cutting and forming taps, threading inserts, threading endmills, threading dies, etc. One of the main technologies used to coat such kind of tools is physical vapor deposition (PVD), in particular cathodic arc evaporation PVD techniques. However, the main disadvantage of using cathodic arc evaporation PVD processes is the commonly high surface roughness resulted from the undesired production of droplets, which leads to the deposition of coating layers with embedded droplets. In spite of recent developments of optimized cathodic arc evaporation techniques allow attaining a reduction of the size and amount of droplets, it still remains a challenge to completely avoid the production of droplets by using this kind of processes because during cathodic arc evaporation PVD processes, the target material being evaporated passes through melting of target surface material by effect of a high current density arc spot.

[0004] Alternatively, for producing coatings without embedded droplets and thus having a very low roughness, the coatings can be produced with electron beam evaporation PVD techniques. By using these techniques, the formation of droplets can be avoided, and the surface quality of the coating is very good, which is well known, for example from TiN coatings produced in this manner. However, controlling of electron beam evaporation PVD processes is very complicated and moreover, this kind of PVD processes is not suitable for deposition of metastable coatings such as TiAIN. This limits usage of such electron beam evaporation PVD techniques in modern production processes.

[0005] Therefore, magnetron sputtering PVD techniques are the currently most commonly used deposition techniques for producing coated tools (in particular cutting and forming tools), in cases in which deposition of droplets free coatings is required. This kind of processes has the advantage that the target material is sputtered and not evaporated, hence no melting of target material needs to occur. Consequently, this kind of processes does not necessarily involve droplet formation and thus smooth coating surfaces can be obtained by using this kind of processes. Furthermore, different kind of coatings can be produced by using magnetron sputtering PVD techniques. However, some disadvantages of this kind of processes are the low deposition rate and the process complexity caused by the reactivity of the chemical elements involved in the coating formation. For example, in the case of the deposition of coatings comprising titanium and nitrogen (for example TiN- and TiCN- based coatings), the strong reactivity of titanium and nitrogen leads to so the called hysteresis. An additional disadvantage of the coatings that are produced by using conventional magnetron sputtering PVD techniques is that their coating density and correspondingly related mechanical properties are lower in comparison for example with coatings produced by using cathodic arc evaporation PVD techniques. This results in a limitation of the usage of such coatings, because such coatings are for example not suitable indeed for applications requiring high wear resistance.

[0006] In order to well understand the solution according to the present invention it is helpful to roughly describe the principles of magnetron sputtering PVD.

[0007] Sputtering PVD is carried out in the interior of a vacuum deposition chamber. Sputtering of target material is produced by operating the target as cathode and by using positive charged ions for impacting the target surface, where the positive charged ions are originated from an ionized gas (i.e. plasma) present in the interior of the vacuum deposition chamber. In other words, an electric field is applied between the target and the substrate to be coated, and an amount of inert gas (for example argon gas) is introduced to the vacuum deposition chamber at a low pressure, wherein the electric field acts to ionize the inert gas atoms, causing the positive charged ions to accelerate toward the negatively charged target. This results in target material being removed (i.e. sputtered) from the target surface by effect of the impact of the positive charged ions in the target surface. Magnetron sputtering PVD is carried out by additionally using a magnetic field to confine the electrons close to the target surface which in turn improves the ionization of the low- pressure gas, allowing in this manner for higher current at lower gas pressure that achieves an even higher thin film deposition rate.

[0008] In other words, during Magnetron sputtering PVD a magnetic field is formed over the target surface. In this manner electrons in the plasma are forced onto a spiral path and circulate over the target surface. Due to their increased path, the number of collisions of electrons with atoms is dramatically increased, which leads to a higher gas ionization in this area over the target surface. This results in increased sputtering removal on the target and therefore leads to an increased sputtering rate. Conventional magnetron sputtering PVD processes are performed in a DC mode and at power densities typically at 20 W / cm2. The disadvantage of a such conventional magnetron sputtering PVD process is that the material removed from the target is ionized only to a very low degree. This means that a negative bias voltage applied to the substrates to be coated will not proportionally accelerate all the sputtered target material to the substrates to be coated but only the ionized sputtered target material. Coating densities which can be reached by using conventional magnetron sputtering PVD processes are therefore considerably lower than coating densities which can be attained by using cathodic arc evaporation (also called arc discharge ion plating) PVD processes, because by using this last kind of processes the ionization of the evaporated target material is about 100%.

[0009] HiPIMS (High Impulse Power Magnetron Sputtering) is a kind of PVD process that evolved from the above-mentioned conventional magnetron sputtering PVD process, and which uses the effect of pulse-like discharges with impulse duration in the range of microseconds to milliseconds with power densities greater than 100 W / cm2. It is known that, depending on the target material, HiPIMS technology can allow achieving a ionization of the sputtered target material up to about 100%, thus eliminating the great disadvantage of the conventional magnetron sputtering PVD processes.

[0010] The use of the HiPIMS technology for coating drills, in particular tap drills, is well known, for example as reported by Krassnitzer in the patent application having publication number WO2013056831 .

[0011] However, the disadvantages associated to sputtering process in general, such as hysteresis effects and considerably lower deposition rate in comparison with cathodic arc evaporation PVD processes cannot be avoided even when using the known HiPIMS technology.

[0012] Objective of the present invention

[0013] The main objective of the present invention is to provide a method for producing TiN based coatings having a surface quality comparable to sputtering PVD produced coatings but being deposited at a considerably higher deposition rate and that are suitable for meeting the necessary exigencies of cutting tools and forming tools, in particular of the type forming and cutting taps, more in particular forming dies.

[0014] Solution provided by the present invention

[0015] The objective of the present invention is attained by using Ti targets comprising alloying elements in inventive manner, so that the desired increment of the deposition and formation of droplets free coatings at the same time can be attained.

[0016] The alloying elements selected in inventive manner may be chemical elements whose discharge current is at least 30% lower in comparison with it from Ti, and preferably maximal 80 % lower in comparison with it from Ti.

[0017] In order to facilitate understanding of what is meant with a discharge current of at least 30% lower in comparison with it from Ti, and of maximal 80% lower in comparison with it from Ti, the meaning will be explaining by using following example: When by conducting a HiPIMS deposition process by using a power density of 1 kW / cm2at a target made of the chemical element titanium (Ti) and by setting a nitrogen partial pressure of 0.1 Pa, a discharge current of 80 A is measured, and when by conducting a HiPIMS deposition process in the same manner but using a target made of the chemical element tantalum (Ta), i.e. when by using a power density of 1 kW / cm2at a target made of tantalum (Ta) and by setting a nitrogen partial pressure of 0.1 Pa, a discharge current of 50 A is measured, then the discharge current of the chemical element tantalum (Ta) is considered to be 37.5 % lower than from the chemical element titanium (Ti). Thus, in this case, 80 A is considered as 100 %, and therefore 56 A would be 30 % lower than 80 A, and 16 A would be 80 % lower than 80 A, respectively. Consequently, Ta may be a chemical element that can be used as allowing element in the Ti target comprising allowing elements according to the present invention for attaining a higher deposition rate of the inventive TiN coating (also called TiN based coating in the present description).

[0018] The present invention provides a method that allows attaining increased deposition rates by HiPIMS deposition of smooth (droplets free) TiN based coatings, wherein the deposition rate may be increased by a factor of 2 to 4 in comparison with known HiPIMS methods used for deposition of TiN coatings, and wherein the inventive TiN based coatings do not show any detriments in comparison with TiN coatings deposited by using HiPIMS methods in known manner.

[0019] The TiN based coatings produced by using the inventive method exhibit smooth (droplets free) coating surface, whose surface quality is comparable to the high surface quality obtained by producing TiN coatings using known sputtering PVD processes (i.e. known sputtering, magnetron sputtering and HiPIMS PVD processes). However, common HiPIMS deposition processes allows deposition of smooth (droplets free) coatings with the disadvantage that the deposition rates are considerably lower than the deposition rates of arc PVD deposited coatings.

[0020] The method according to the present invention involves the use of the HIPIMS technology and allows in this manner producing dense coatings with superior mechanical properties that are comparable to arc deposited coatings as well as with smooth (droplets free) coating surface. Since normally higher deposition rates are associated to the formation of droplets in the coating, the present invention provides an unexpected big advantage that is allowing attaining higher deposition rates and at the same time avoiding formation of droplets in spite of comparatively high deposition rates.

[0021] The present invention may relate concretely to a coating method for producing cutting tools and / or forming tools coated with a TiN based coating, the method comprising a step in which one or more TiN based coating layers are deposited on a substrate surface of the cutting tool or forming tool, by using HiPIMS deposition techniques, wherein for the deposition of at least one of the TiN based coating layers a target is used as cathode, wherein the target is formed of a material consisting of Ti and an amount of alloying elements to be used as material source for forming a TiN coating layer correspondingly comprising alloying elements - in the present context such a layer also called TiN based coating layer.

[0022] Particularly good results may be obtained by using Ta, or W, or both Ta and W, as allowing elements in the Ti target comprising allowing elements according to the present invention (see some inventive examples shown in Figure 1 , in which the Target with allowing elements according to the present invention contains Ta or W). Similarly, very good results may be attained by additionally adding Si and / or B to the Ti target already comprising Ta or W or Ta and W as allowing elements according to the present invention (see some inventive examples shown in Figure 1 , in which the Target with allowing elements according to the present invention contains Si in addition to W or in addition to Ta). The mechanical properties of the TiN based coating layers formed according to the present invention do not show any detriments (see hardness measured in some inventive examples of TiN based coatings deposited according to the present invention

[0023] According to a preferred embodiment of the present invention, the inventive method for producing a coated substrate, preferably a coated tool of the type cutting tool or forming tool, may comprise the deposition of a hard coating comprising one or more layers, in any case at least one TiN based layer on a surface of the substrate (also called substrate surface to be coated or coated substrate surface), wherein the deposition of the hard coating comprises following steps:

[0024] - Depositing a TiN coating layer (the at least one TiN based layer) comprising alloying chemical elements, this layer being deposited onto the substrate surface to be coated by using a magnetron sputtering process of the type HiPIMS, with power densities greater than 100 W / cm2, wherein one or more targets having chemical element composition in atomic concentration of Tia Mel b’Me2care used as cathode during deposition, and wherein the TiN coating layer comprising alloying elements having a chemical element composition in atomic concentration of TixMelyMe2zNdCe, where: o Me1 is one or more chemical elements selected fulfilling the criteria that each one of these chemical elements when used as target material has a discharge current at least 30 % lower than it of Ti when used as target material under same deposition conditions, in particular regarding power density applied at the target and nitrogen partial pressure, o Me2 is one or both chemical elements selected from Si and B, o a+b+c = 1 , 0.50 < a < 0.95, 0.05 < b+c < 0.50, 0 < b < 0.30,

[0025] 0 < c < 0.30, o x+y+z = 1 , 0.50 < x < 0.99, 0.01 < y+z < 0.50, 0 < y < 0.30,

[0026] 0 < z < 0.30, o d+e = 1 , 0.5 < d < 1 , 0 < e < 0.5 o the sum of the contents of Ti, Me1 and Me2 is normalized to a total concentration 1 , and the sum of the contents of N and C is normalized to total concentration of 1 .

[0027] Me1 may preferably be one or more chemical elements selected from Ta, W, Hf and Re.

[0028] Still more preferably Me1 may be Ta, or W, or both Ta and B. In some cases, in which the content of alloying elements Me1 should be maintained in a low range of concentration for different reasons, a particular range 0 < b < 0.15, or 5 < b < 0.15, or 5 < b < 0.10, is preferred.

[0029] The above-mentioned TiN coating layer comprising alloying elements may be deposited directly onto the substrate surface without any further coating layer in between.

[0030] According to a preferred variant of the above-described preferred embodiment of the present invention, one or more intermediate layers may be deposited between the substrate surface and the TiN coating layer comprising alloying elements, wherein the one or more intermediate layers are preferably deposited by using a magnetron sputtering process of the type HiPIMS, with power densities greater than 100 W / cm2.

[0031] Depending on the intended use of the coated substrate, the intermediate layer, or if more than one intermediate layers, then at least one intermediate layer or if appropriate even all intermediate layers may be produced:

[0032] - comprising TiN and / or TiAIN and / or AICrN, or

[0033] - consisting of TiN and / or TiAIN and / or AICrN.

[0034] According to a further preferred variant of any of the above-mentioned preferred embodiments or preferred variants of the preferred embodiments of the present invention:

[0035] - a negative bias voltage may be applied to the substrate during deposition of the TiN coating layer comprising alloying elements, wherein the value of the applied bias voltage is preferable in a range from -40 V up to -80 V, and / or

[0036] - a negative bias voltage may be applied to the substrate during deposition of the intermediate layer or if more than one intermediate layers, then during deposition of at least one intermediate layer or if appropriate even during deposition of all intermediate layers, wherein the value of the applied bias voltage is preferable in a range from -30 V up to -120 V, more preferably in a range from -40 V up to -80 V.

[0037] The outstanding results surprisingly attained by using the present invention are partially shown in Figures 1 and 2, where some non-inventive coating methods and the non-inventive coatings produced thereof as well as some inventive coating methods and the inventive coatings produced thereof are compared.

[0038] Figure 1 shows a comparison of the deposition rates in pm / h attained by using non- inventive coating methods and by using inventive coating methods.

[0039] Figure 2 shows a comparison between the hardness in GPa of non-inventive coatings produced by using non-inventive coating methods and of inventive coatings produced by using inventive coating methods.

[0040] In all examples shown in both Figures 1 and 2, the pulse power density applied was of 0.5 kW / cm2and the average power used was of 15kW.

[0041] As it is shown in Figure 1 , the use of the HiPIMS technology in non-inventive methods for producing TiN coating layers without alloying elements as well as for producing TiN coating layers comprising Cr or Si as alloying elements resulted in low deposition rates of less than 1 p.m / h, while the use of the HiPIMS technology in methods conducted for producing TiN coating layers with alloying elements according to the present invention (in the in Figure 1 shown inventive examples using as allowing elements Ta, or W, or Ta and Si, or W and Si, respectively in the inventive ranges) resulted in much higher deposition rates in a range from 1 .5 pm / h up to 3 pm / h.

[0042] As it is shown in Figure 2, the hardness of the coatings produced by using methods according to the present invention was in a range from a value lightly higher than 40 GPa and a value higher than 45 GPa but lower than 50 GPa, while the hardness of the coatings produced by using non-inventive methods was in a range from a value lightly above 36 GPa and a value not higher than 45 GPa. Concretely the present invention relates to:

[0043] A method for producing coated cutting tools and / or coated forming tools with a coated substrate surface, the method comprising the deposition of a hard coating consisting of one or more layers, in any case at least one TiN based layer on said substrate surface to be coated, wherein the deposition of the hard coating comprises following step:

[0044] - Deposition of the at least one TiN based layer, which is a TiN coating layer comprising alloying chemical elements, this layer being deposited onto the substrate surface to be coated in the interior of a vacuum coating chamber, by using a magnetron sputtering process of the type HiPIMS, with power densities greater than 100 W / cm2, wherein one or more targets having chemical element composition in atomic concentration of Tia’Me1 b’Me2care used as cathode during deposition, preferably while a nitrogen gas flow as reactive gas flow and a non-reactive gas flow are introduced into the coating chamber, and wherein the TiN coating layer comprising alloying elements having a chemical element composition in atomic concentration of TixMe1yMe2zNdCe, wherein: o Me1 is one or more chemical elements, wherein Me1 is selected fulfilling the condition that if a target consisting of Me1 is used instead of a target consisting of Ti under application of the same coating process parameters, in particular same power density at the target and same nitrogen partial pressure, the discharge current produced by using the target consisting of Me1 is at least 30% lower than the discharge current produced by using the target consisting of Ti, o Me2 is one or both chemical elements selected from Si and B, o a+b+c = 1 , 0.50 < a < 0.95, 0.05 < b+c < 0.50, 0 < b < 0.30,

[0045] 0 < c < 0.30, o x+y+z = 1 , 0.50 < x < 0.99, 0.01 < y+z < 0.50, 0 < y < 0.30,

[0046] 0 < z < 0.30, o d+e = 1 , 0.5 < d < 1 , 0 < e < 0.5 o the sum of the contents of Ti, Me1 and Me2 is normalized to a total concentration 1 , and the sum of the contents of N and C is normalized to total concentration of 1 .

[0047] According to a preferred embodiment of the inventive method, Me1 may be one or more from Ta, W, Hf and Re.

[0048] Particularly good results may be obtained when Me1 is Ta, or W, or both Ta.

[0049] In some cases, in which the content of alloying elements Me1 should be maintained in a low range of concentration for different reasons, a particular range 0 < b < 0.15, or 5 < b < 0.15, or 5 < b < 0.10, is preferred.

[0050] Particularly good results may be obtained when Me2 is Si.

[0051] According to a further preferred embodiment the at least one TiN coating layer comprising alloying elements may be deposited directly onto the substrate surface without any further coating layers in between.

[0052] According to another preferred embodiment the hard coating may be deposited comprising one or more intermediate layers that are deposited before depositing the at least one TiN coating layer comprising alloying chemical elements, between the substrate surface and the at least one TiN coating layer comprising alloying elements, wherein the intermediate layers are nitride layers and / or carbonitride layers and / or carboxynitride layers of one or more metals or semi-metals or transition-metals or a combination thereof, the one or more intermediate layers having a hardness HIT equal to or higher than 20 GPa, preferably higher than 30 GPa, if measured by using nanoindentation techniques, and the one or more intermediate layers having a total thickness corresponding to a value in a range from 50 nm up to 10 p.m, if measured for example by using SEM techniques, TEM techniques or calotte grinding techniques. The one or more intermediate layers may preferably be deposited by using a magnetron sputtering process of the type HiPIMS, with power densities greater than 100 W / cm2in order to produce smooth layers.

[0053] Preferably the one intermediate layer, or if more than one, then at least one intermediate layer, or if appropriate even all intermediate layers may be produced:

[0054] - comprising TiN and / or TiAIN and / or AICrN, or

[0055] - consisting of TiN and / or TiAIN and / or AICrN.

[0056] It may be advantageous conducting the inventive method by applying a negative bias voltage to the substrate during deposition of the intermediate layer or if more than one intermediate layers, then during deposition of at least one intermediate layer or if appropriate even during deposition of all intermediate layers.

[0057] Preferably a negative bias voltage may be applied to the substrate during deposition of the whole hard coating or at least during the deposition of the TiN coating layer comprising alloying elements.

[0058] It may be advantageous particularly advantageous to apply the bias voltage during deposition of the TiN coating layer comprising alloying elements having a value in a range from -40 V up to -80 V.

[0059] It may also be particularly advantageous to apply the bias voltage applied during deposition of the one or more intermediate layers having a value in a range from - 30 V up to -120 V.

[0060] In some cases, applying a value of the bias voltage during deposition of the one or more intermediate layers in a range from -40 V up to -80 V may be particularly advantageous.

[0061] Preferably the substrate surface to be coated may not comprise neither diamond nor CBN. Most preferably the substrate surface to be coated may be made of one or more of following materials:

[0062] - cemented carbide,

[0063] - high speed steel,

[0064] - hot working steel,

[0065] - cold working steel,

[0066] - ceramics, and

[0067] - cermets.

[0068] According to further preferred embodiments the following may be valid c = 0, and / or z = 0.

[0069] Particularly good results may be obtained by using following process parameters during deposition of the at least one TiN coating layer comprising alloying chemical elements:

[0070] - a pulse power density set at a value in a range from 0.3 kW / cm2up to

[0071] 10 kW / cm2, and / or

[0072] - an average power set at a value in a range from 5 kW up to 20 kW, and / or

[0073] - a substrate temperature set at a value in a range from 300 °C up to 500 °C, and / or

[0074] - a nitrogen partial pressure set at a value in a range from 0.01 Pa up to 3.0 Pa.

[0075] The present invention may relate also to a tool of the type cutting tool or forming tool produced by using a method according to any of the inventive embodiments described above, in particular wherein the hard coating or at least the at least one TiN coating layer comprising alloying chemical elements exhibits following features:

[0076] - a hardness HIT in a range from 20 GPa up to 48 GPa, if measured by using nanoindentation techniques, and / or

[0077] - a Young modulus E in a range from 300 GPa up to 550 GPa, if measured by using nanoindentation techniques, and / or - an inherent compressive stress from 0.1 GPa up to 5.0 GPa, if measured by using known bending techniques, and / or

[0078] - thickness layer in a range from 300 nm up to 30 |im, if measured for example by using SEM techniques, TEM techniques or calotte grinding techniques.

[0079] Preferably the substrate surface on which said hard coating is deposited may not comprise neither diamond nor CBN.

[0080] Preferably the inventive tool may have a substrate surface on which said hard coating is deposited which is made of one or more of following materials:

[0081] - cemented carbide,

[0082] - high speed steel,

[0083] - hot working steel,

[0084] - cold working steel,

[0085] - ceramics, and

[0086] - cermets.

[0087] More preferably the inventive tool may be a:

[0088] - cutting tap, or

[0089] - forming tap, or

[0090] - forming die.

[0091] A very particular preferred embodiment of a method according to the present invention is a method for producing coated cutting tools and / or coated forming tools with a coated substrate surface, the method comprising the deposition of a hard coating consisting of one or more layers, in any case at least one TiN based layer on said substrate surface to be coated, whrein the deposition of the hard coating comprises following step:

[0092] - Deposition of the at least one TiN based layer, which is a TiN coating layer comprising alloying chemical elements, this layer being deposited onto the substrate surface to be coated in the interior of a vacuum coating chamber, by using a magnetron sputtering process of the type HiPIMS, with power densities greater than 100 W / cm2, wherein one or more targets having chemical element composition in atomic concentration of Tia’Me1 b’Me2care used as cathode during deposition, preferably while a nitrogen gas flow as reactive gas flow and a non-reactive gas flow are introduced into the coating chamber, and wherein the TiN coating layer comprising alloying elements having a chemical element composition in atomic concentration of TixMe1yMe2zNdCe, wherein: o Me1 is one or more chemical elements selected from Ta, W, Hf and Re, o Me2 is one or both chemical elements selected from Si and B, o a+b+c = 1 , 0.50 < a < 0.95, 0.05 < b+c < 0.50, 0 < b < 0.30,

[0093] 0 < c < 0.30, o x+y+z = 1 , 0.50 < x < 0.99, 0.01 < y+z < 0.50, 0 < y < 0.30,

[0094] 0 < z < 0.30, o d+e = 1 , 0.5 < d < 1 , 0 < e < 0.5 the sum of the contents of Ti, Me1 and Me2 is normalized to a total concentration 1 , and the sum of the contents of N and C is normalized to total concentration of 1 .

Claims

Claims1 . A method for producing coated cutting tools and / or coated forming tools with a coated substrate surface, the method comprising the deposition of a hard coating consisting of one or more layers, in any case at least one TiN based layer on said substrate surface to be coated, characterized in that the deposition of the hard coating comprises following step:- Deposition of the at least one TiN based layer, which is a TiN coating layer comprising alloying chemical elements, this layer being deposited onto the substrate surface to be coated in the interior of a vacuum coating chamber, by using a magnetron sputtering process of the type HiPIMS, with power densities greater than 100 W / cm2, wherein one or more targets having chemical element composition in atomic concentration of TiaMe1 b Me2care used as cathode during deposition, preferably while a nitrogen gas flow as reactive gas flow and a non-reactive gas flow are introduced into the coating chamber, and wherein the TiN coating layer comprising alloying elements having a chemical element composition in atomic concentration of TixMe1yMe2zNdCe, wherein: o Me1 is one or more chemical elements, wherein Me1 is selected fulfilling the condition that if a target consisting of Me1 is used instead of a target consisting of Ti under application of the same coating process parameters, in particular same power density at the target and same nitrogen partial pressure, the discharge current produced by using the target consisting of Me1 is at least 30% lower than the discharge current produced by using the target consisting of Ti, o Me2 is one or both chemical elements selected from Si and B, o a+b+c = 1 , 0.50 < a < 0.95, 0.05 < b+c < 0.50, 0 < b < 0.30, 0 < c < 0.30, o x+y+z = 1 , 0.50 < x < 0.99, 0.01 < y+z < 0.50, 0 < y < 0.30, 0 < z < 0.30, o d+e = 1 , 0.5 < d < 1 , 0 < e < 0.5 o the sum of the contents of Ti, Me1 and Me2 is normalized to a total concentration 1 , and the sum of the contents of N and C is normalized to total concentration of 1 .

2. Method according to claim 1 , characterized in that Me1 is one or more from Ta, W, Hf and Re.

3. Method according to claim 2, characterized in that Me1 is Ta or W or both Ta and W.

4. Method according to claim 3, characterized in that Me2 is Si, and / or:- 0 < b < 0.15, or- 5 < b < 0.15, or- 5 < b < 0.10.

5. The method according to any of the preceding claims 1 to 4, characterized in that the at least one TiN coating layer comprising alloying elements is deposited directly onto the substrate surface without any further coating layer in between.

6. The method according to any of the preceding claims 1 to 4, characterized in that hard coating is deposited comprising one or more intermediate layers that are deposited before depositing the at least one TiN coating layer comprising alloying chemical elements, between the substrate surface and the at least one TiN coating layer comprising alloying elements, wherein the intermediate layers are nitride layers and / or carbonitride layers and / or carboxynitride layers of one or more metals or semimetals or transition-metals or a combination thereof, the one or more intermediate layers having a hardness HIT equal to or higher than 20 GPa, preferably higher than 30 GPa, if measured by using nanoindentation techniques, and the one or more intermediate layers having a total thickness corresponding to a value in a range from 50 nm up to 10 pm, if measured for example by using SEM techniques, TEM techniques or calotte grinding techniques.

7. The method according to claim 6, characterized in that the one or more intermediate layers are deposited by using a magnetron sputtering process of the type HiPIMS, with power densities greater than 100 W / cm2.

8. The method according to claim 6 or 7, characterized in that the one intermediate layer, or if more than one intermediate layers, then at least one intermediate layer or if appropriate even all intermediate layers are produced:- comprising TiN and / or TiAIN and / or AICrN, or- consisting of TiN and / or TiAIN and / or AICrN.

9. The method according to any of the preceding claims 6 to 8, characterized in that:- a negative bias voltage is applied to the substrate during deposition of the intermediate layer or if more than one intermediate layers, then during deposition of at least one intermediate layer or if appropriate even during deposition of all intermediate layers.

10. The method according to any of the preceding claims 1 to 9, characterized in that:- a negative bias voltage is applied to the substrate during deposition of the hard coating or at least during the deposition of the TiN coating layer comprising alloying elements.11 . The method according to claim 10, characterized in that:- the value of the bias voltage applied during deposition of the TiN coating layer comprising alloying elements is in a range from -40 V up to -80 V.

12. The method according to any of the preceding claims 1 to 11 , characterized in that:- the value of the bias voltage applied during deposition of the one or more intermediate layers is in a range from -30 V up to -120 V.

13. The method according to claim 12, characterized in that:- the value of the bias voltage applied during deposition of the one or more intermediate layers is in a range from -40 V up to -80 V.

14. The method according to any of the preceding claims 1 to 13, characterized in that the substrate surface to be coated does not comprise neither diamond nor CBN.

15. The method according to any of the preceding claims 1 to 14, characterized in that the substrate surface to be coated is made of one or more of following materials:- cemented carbide,- high speed steel,- hot working steel,- cold working steel,- ceramics, and- cermets.

16. The method according to any of the preceding claims 1 to 15, characterized in that:- c = 0, and / or- z = 0.

17. The method according to any of the preceding claims 1 to 16, characterized in that following process parameters are used during deposition of the at least one TiN coating layer comprising alloying chemical elements:- a pulse power density set at a value in a range from 0.3 kW / cm2up to10 kW / cm2, and / or- an average power set at a value in a range from 5 kW up to 20 kW, and / or- a substrate temperature set at a value in a range from 300 °C up to 500 °C, and / or- a nitrogen partial pressure set at a value in a range from 0.01 Pa up to 3.0 Pa.

18. A tool of the type cutting tool or forming tool produced by using a method according to any of the preceding claims 1 to 17, characterized in that the hard coating or at least the at least one TiN coating layer comprising alloying chemical elements exhibits following features:- a hardness HIT in a range from 20 GPa up to 48 GPa, if measured by using nanoindentation techniques, and / or- a Young modulus E in a range from 300 GPa up to 550 GPa, if measured by using nanoindentation techniques, and / or- an inherent compressive stress from 0.1 GPa up to 5.0 GPa, if measured by using known bending techniques, and / or- thickness layer in a range from 300 nm up to 30 |im, if measured for example by using SEM techniques, TEM techniques or calotte grinding techniques.

19. The tool according to claim 18, characterized in that the substrate surface on which said hard coating is deposited does not comprise neither diamond nor CBN.

20. The tool according to claim 18 or 19, characterized in that the substrate surface on which said hard coating is deposited is made of one or more of following materials:- cemented carbide,- high speed steel,- hot working steel,- cold working steel,- ceramics, and- cermets.21 . The tool according to any or the preceding claims 18 to 20, characterized in that the tool is a: cutting tap, or forming tap, or forming die.

22. A method for producing coated cutting tools and / or coated forming tools with a coated substrate surface, the method comprising the deposition of a hard coating consisting of one or more layers, in any case at least one TiN based layer on said substrate surface to be coated, characterized in that the deposition of the hard coating comprises following step:- Deposition of the at least one TiN based layer, which is a TiN coating layer comprising alloying chemical elements, this layer being deposited onto the substrate surface to be coated in the interior of a vacuum coating chamber, by using a magnetron sputtering process of the type HiPIMS, with power densities greater than 100 W / cm2, wherein one or more targets having chemical element composition in atomic concentration of TiaMe1 b Me2care used as cathode during deposition, preferably while a nitrogen gas flow as reactive gas flow and a non-reactive gas flow are introduced into the coating chamber, and wherein the TiN coating layer comprising alloying elements having a chemical element composition in atomic concentration of TixMe1yMe2zNdCe, wherein: o Me1 is one or more chemical elements selected from Ta, W, Hf and Re, o Me2 is one or both chemical elements selected from Si and B, o a+b+c = 1 , 0.50 < a < 0.95, 0.05 < b+c < 0.50, 0 < b < 0.30, 0 < c < 0.30, o x+y+z = 1 , 0.50 < x < 0.99, 0.01 < y+z < 0.50, 0 < y < 0.30, 0 < z < 0.30, o d+e = 1 , 0.5 < d < 1 , 0 < e < 0.5 the sum of the contents of Ti, Me1 and Me2 is normalized to a total concentration 1 , and the sum of the contents of N and C is normalized to total concentration of 1 .

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