Semiconductor package and method for manufacturing semiconductor package

Abstract

The present invention pertains to: a semiconductor package having a sealing layer that comprises at least one semiconductor die and an encapsulating material, a rewiring layer A that contacts at least one of the semiconductor dies and is connected to a circuit of said semiconductor dies, a conductive connection section that is connected to the rewiring layer A, and a substrate that is connected to the conductive connection section, wherein the rewiring layer A is formed by stacking a layer including insulating patterns A and a conductive pattern A present between the patterns of the insulating patterns A, the insulating patterns A have a via structure, and the angle formed between a side surface of the via structure and the bottom surface of the insulating patterns A is 70 to 110°; and a method for manufacturing said package.

Description

Semiconductor package and method of manufacturing the semiconductor package

[0001] The present invention relates to a semiconductor package and a method for manufacturing the semiconductor package.

[0002] Today, semiconductor packages are used in mobile phones, tablet devices, and various other electronic devices. A semiconductor package is a case that protects components such as delicate semiconductor chips and electronic circuits from the external environment and mounts them on a substrate such as a printed wiring board. The semiconductor package functions to transmit signals generated by the components to other devices and transmit signals from other devices to the components. Mobile phones, tablet devices, and other electronic devices are becoming increasingly smaller, lighter, and more multifunctional. To meet these needs, semiconductor packages are also required to be even smaller, more highly integrated, and more densely packed. Advances in wiring technology, such as those using rewiring layers, are desired.

[0003] For example, Patent Document 1 discloses a semiconductor device including: a semiconductor die; an encapsulant for encapsulating the semiconductor die; a connector disposed on the encapsulant; a redistribution conductive layer disposed on the encapsulant, in contact with the connector, and including a first conductive pad disposed between the encapsulant and the connector; a second conductive pad in contact with the redistribution conductive layer; and a semiconductor member electrically connected to the second conductive pad, wherein the first conductive pad is disposed at a height lower than the second conductive pad; a first interlayer dielectric layer is disposed on the semiconductor die and the redistribution conductive layer; the first interlayer dielectric layer includes an opening, and a portion of the opening is occupied by the first conductive pad and the first electrical connector; a third conductive pad disposed beneath the first interlayer dielectric layer, the third conductive pad disposed on a second interlayer dielectric layer and covered by the first interlayer dielectric layer, the third conductive pad being embedded within the second interlayer dielectric layer, and the bridge structure connecting the first conductive pad and the third conductive pad, the bridge structure comprising a first conductive via, a routing line, and a second conductive via, wherein the via, the first conductive via directly connects the first conductive pad and the routing line, the routing line directly connects the first conductive via and the second conductive via, and the second conductive via directly connects the routing line and the third conductive pad, and the bottom surface of the entire routing line is in direct contact with the top surface of the third interlayer dielectric layer.

[0004] Patent Document 2 describes a semiconductor package including a first redistribution layer, a second redistribution layer, a first semiconductor die, and a second semiconductor die, wherein the first redistribution layer includes a first surface and a second surface opposite to the first surface, the second redistribution layer is disposed on the first surface of the first redistribution layer, the first semiconductor die is disposed on the first redistribution layer and the second redistribution layer and is electrically connected to the first redistribution layer and the second redistribution layer, and the second semiconductor die is disposed on the second redistribution layer and is electrically connected to the second redistribution layer.

[0005] US Patent Application Publication No. 2023 / 0089795 US Patent Application Publication No. 2021 / 0035908

[0006] Here, in a semiconductor package using a rewiring layer, it is required that the occurrence of cracks is suppressed during long-term heat resistance tests and humidity resistance tests.

[0007] An object of the present invention is to provide a semiconductor package that is suppressed from generating defects such as cracks, peeling, and voids during long-term heat resistance tests and humidity resistance tests, and a method for manufacturing such a semiconductor package.

[0008] Representative embodiments of the present invention are described below. <1> A semiconductor package comprising: an encapsulating layer including at least one semiconductor die and an encapsulant; a redistribution layer A in contact with at least one of the semiconductor dies and connecting to a circuit of the semiconductor die; a conductive connection portion connecting to the redistribution layer A; and a substrate connecting to the conductive connection portion, wherein the redistribution layer A is formed by stacking layers including an insulating pattern A and a conductive pattern A present between patterns of the insulating pattern A, the insulating pattern A having a via structure, and an angle formed between a side surface of the via structure and a bottom surface of the insulating pattern A is 70 to 110 degrees. <2> The semiconductor package according to <1>, wherein the encapsulating layer is an encapsulating layer including two or more semiconductor dies and an encapsulant, and circuits in two or more of the two or more semiconductor dies are connected to the redistribution layer A. <3> The semiconductor package according to <1> or <2>, further comprising one or more semiconductor dies present outside the encapsulating layer and connected to the redistribution layer A. <4> The semiconductor package according to any one of <1> to <3>, wherein the rewiring layer A has a stacked structure of four or more layers. <5> The semiconductor package according to any one of <1> to <4>, wherein the wiring in the rewiring layer A includes a line pattern, and the minimum line width of the line pattern is 0.1 to 10 μm. <6> The semiconductor package according to any one of <1> to <5>, wherein the insulating pattern A includes a resin having a repeating unit represented by the following formula (1-1): In formula (1-1), X １ represents an organic group having 4 or more carbon atoms, and Y１ represents an organic group having 4 or more carbon atoms. １ and Y １ are each independently an organic group containing a structure in which two or more hydrogen atoms have been removed from a structure represented by any one of the following formulas (V-1) to (V-4): In formula (V-2), R Ｘ１ are each independently a hydrogen atom, an alkyl group, or a halogenated alkyl group. Ｘ２ and R Ｘ３ each independently represents a hydrogen atom or a substituent, R Ｘ２ and R Ｘ３may be bonded to form a ring structure. <8> The semiconductor package according to any one of <1> to <7>, wherein the insulating pattern A has a breaking elongation of 40% or more. <9> The semiconductor package according to any one of <1> to <8>, wherein the insulating pattern A has a glass transition temperature of 220°C or more. <10> The semiconductor package according to any one of <1> to <9>, wherein the insulating pattern A has a Young's modulus of 2.7 GPa or more. <11> A method for manufacturing a semiconductor package, comprising: an encapsulating layer forming step of embedding a semiconductor die in an encapsulant and forming an encapsulating layer having one surface on which a circuit of the semiconductor die is exposed and the other surface on which the circuit of the semiconductor die is not exposed; a rewiring layer A forming step of laminating a layer including an insulating pattern A and a conductive pattern A present between patterns of the insulating pattern A on the surface of the encapsulating layer on which the circuit is exposed, to form a rewiring layer A; a connection part forming step of forming a conductive connection part on a surface of the rewiring layer A different from the surface that contacts the encapsulating layer, and a step of connecting the connection part to a substrate, wherein the rewiring layer A forming step includes forming a via structure using the insulating pattern A, and an angle between a side surface of the via structure and a bottom surface of the insulating pattern A is 70 to 110 degrees. <12> The method for manufacturing a semiconductor package according to <11>, wherein the insulating pattern A is formed using a negative photosensitive resin composition. <13> The method for producing a semiconductor package according to <12>, wherein the negative photosensitive resin composition contains a resin having at least one repeating unit selected from the repeating units represented by the following formula (4-1) and the repeating units represented by the following formula (4-2): In formula (4-1), X １ is a tetravalent organic group, and Y １ is a divalent organic group, and R １ and R ２ are each independently a hydrogen atom or a monovalent organic group. In formula (4-2), X １ represents an organic group having 4 or more carbon atoms, and Y １ represents an organic group having 4 or more carbon atoms, and R １ each independently represents a structure containing a polymerizable group, and n and m each independently represent an integer of 0 to 4. <14> X in the above formula (4-1) １ and Y１ are each independently an organic group containing a structure in which two or more hydrogen atoms have been removed from a structure represented by any one of the following formulas (V-1) to (V-4), and X in the above formula (4-2) １ and Y １ are each independently an organic group containing a structure in which two or more hydrogen atoms have been removed from a structure represented by any one of the following formulas (V-1) to (V-4): In formula (V-2), R Ｘ１ are each independently a hydrogen atom, an alkyl group, or a halogenated alkyl group. Ｘ２ and R Ｘ３ each independently represents a hydrogen atom or a substituent, R Ｘ２ and R Ｘ３ may be bonded to form a ring structure. <15> The method for producing a semiconductor package according to any one of <12> to <14>, wherein the negative photosensitive resin composition contains an oxime initiator. <16> The method for producing a semiconductor package according to any one of <12> to <15>, wherein the negative photosensitive resin composition contains a polymerizable compound having two or more ethylenically unsaturated bonds. <17> The method for producing a semiconductor package according to any one of <12> to <16>, wherein in the rewiring layer A formation step, a photosensitive film formed from the negative photosensitive resin composition is exposed by an i-line stepper. <18> The method for producing a semiconductor package according to <17>, wherein the numerical aperture of the i-line stepper is 0.10 to 0.60. <19> The method for producing a semiconductor package according to ２ <20> The method for manufacturing a semiconductor package according to <17> or <18>, wherein the exposure dose by the i-line stepper is 1 to 2000 mJ / cm ２ <21> The method for manufacturing a semiconductor package according to any one of <11> to <20>, wherein the via structure is formed by development using a solvent as a developer.

[0009] According to the present invention, there are provided a semiconductor package that is suppressed from generating defects such as cracks, peeling, and voids during long-term heat resistance tests and humidity resistance tests, and a method for manufacturing the semiconductor package.

[0010] FIG. 2 is a schematic cross-sectional view showing an example of a rewiring layer A. FIG. 3 is an enlarged view of the dashed dotted line portion in FIG. 1. FIG. 4 is a schematic cross-sectional view showing a specific example of a conductive connection portion. FIG. 5 is a schematic cross-sectional view showing an example of a semiconductor package of the present invention. FIG. 6 is a schematic cross-sectional view showing another example of a semiconductor package of the present invention. FIG. 7 is a schematic cross-sectional view showing another example of a method for manufacturing a semiconductor package of the present invention. FIG. 8 is a schematic cross-sectional view showing the configuration of a laminate used in the examples.

[0011] The following describes the main embodiments of the present invention. However, the present invention is not limited to the explicitly described embodiments. In this specification, a numerical range expressed using the symbol "to" means a range that includes the numerical values ​​before and after "to" as the lower and upper limits, respectively. In this specification, the term "process" refers not only to an independent process but also to a process that cannot be clearly distinguished from other processes as long as the process achieves its intended effect. In the description of a group (atomic group), a notation that does not specify whether it is substituted or unsubstituted encompasses both unsubstituted groups (atomic groups) and substituted groups (atomic groups). For example, the term "alkyl group" encompasses not only unsubstituted alkyl groups (unsubstituted alkyl groups) but also substituted alkyl groups (substituted alkyl groups). In this specification, unless otherwise specified, "exposure" includes not only exposure using light but also exposure using particle beams such as electron beams and ion beams. In addition, examples of light used for exposure include actinic rays or radiation such as the bright line spectrum of a mercury lamp, far ultraviolet light typified by excimer lasers, extreme ultraviolet light (EUV light), X-rays, and electron beams. As used herein, "(meth)acrylate" refers to either or both of "acrylate" and "methacrylate," "(meth)acrylic" refers to either or both of "acrylic" and "methacrylic," and "(meth)acryloyl" refers to either or both of "acryloyl" and "methacryloyl." In the structural formulae herein, Me represents a methyl group, Et represents an ethyl group, Bu represents a butyl group, and Ph represents a phenyl group. As used herein, the term "total solid content" refers to the total mass of all components of the composition excluding the solvent. Furthermore, as used herein, the term "solid content concentration" refers to the mass percentage of the components other than the solvent relative to the total mass of the composition. As used herein, the weight average molecular weight (Mw) and number average molecular weight (Mn) are values ​​measured using gel permeation chromatography (GPC) and are defined as polystyrene equivalent values, unless otherwise specified.In this specification, the weight-average molecular weight (Mw) and number-average molecular weight (Mn) can be determined, for example, by using an HLC-8220GPC (manufactured by Tosoh Corporation) and guard columns HZ-L, TSKgel Super HZM-M, TSKgel Super HZ4000, TSKgel Super HZ3000, and TSKgel Super HZ2000 (all manufactured by Tosoh Corporation) connected in series. Unless otherwise specified, these molecular weights are measured using THF (tetrahydrofuran) as the eluent. However, when THF is not suitable as the eluent, for example, due to low solubility, NMP (N-methyl-2-pyrrolidone) can also be used. Furthermore, unless otherwise specified, detection in GPC measurement is assumed to be performed using a UV (ultraviolet) detector at a wavelength of 254 nm. In this specification, when the positional relationship of each layer constituting a laminate is described as "above" or "below," it is sufficient that another layer is above or below the reference layer among the multiple layers being considered. In other words, a third layer or element may be interposed between the reference layer and the other layer, and the reference layer and the other layer do not need to be in contact with each other. Unless otherwise specified, the direction in which layers are stacked relative to the substrate (sealing layer) is referred to as "above." Alternatively, if a resin composition layer is present, the direction from the substrate to the resin composition layer is referred to as "above," and the opposite direction is referred to as "below." Note that such vertical directions are defined for convenience in this specification, and in actual embodiments, the "above" direction in this specification may differ from the vertically upward direction. In this specification, unless otherwise specified, the composition may contain two or more compounds corresponding to each component contained in the composition. Furthermore, unless otherwise specified, the content of each component in the composition means the total content of all compounds corresponding to that component. In this specification, unless otherwise specified, the temperature is 23° C., the atmospheric pressure is 101,325 Pa (1 atmosphere), and the relative humidity is 50% RH. In this specification, a combination of preferred embodiments is a more preferred embodiment.

[0012] (Semiconductor Package) The semiconductor package of the present invention comprises an encapsulating layer including at least one semiconductor die and an encapsulant, a rewiring layer A contacting at least one of the semiconductor dies and connecting to a circuit of the semiconductor die, a conductive connection portion connecting to the rewiring layer A, and a substrate connecting to the conductive connection portion, the rewiring layer A being formed by stacking layers including an insulating pattern A and a conductive pattern A present between patterns of the insulating pattern A, the insulating pattern A having a via structure, and the angle formed between the side surface of the via structure and the bottom surface of the insulating pattern A is 70 to 110°. Hereinafter, the angle formed between the side surface of the via structure and the bottom surface of the insulating pattern A will also be referred to simply as the "taper angle."

[0013] The semiconductor package of the present invention suppresses the occurrence of defects such as cracks, peeling, and voids during long-term heat resistance tests and humidity resistance tests. The mechanism by which this effect is achieved is unclear, but is speculated as follows. Conventionally, via structures for connecting adjacent layers have been formed in rewiring layers. However, long-term heat resistance tests and humidity resistance tests have sometimes resulted in defects such as cracks, peeling, and voids occurring in the insulating pattern near the via structures. The via structures are formed, for example, by patterning an insulating material to form via holes and then filling the via holes with a metal such as copper. However, when the resolution of the insulating pattern is low, the shape of the via holes can sometimes resemble an inverted truncated cone, resulting in a small taper angle. Such a small taper angle is speculated to be prone to defects such as cracks, peeling, and voids, as stress concentrates at the intersection between the side surface of the via structure and the bottom surface of the insulating pattern A due to expansion of the insulating pattern A during long-term heat resistance tests and humidity resistance tests. Conversely, if the taper angle is too large, stress is concentrated at the intersection between the side surface of the via structure and the top surface of the insulating pattern A, and it is presumed that abnormalities such as cracks, peeling, and voids are likely to occur. Therefore, the inventors considered adopting a configuration in which the taper angle is set to 70 to 110°. It is believed that this configuration suppresses the concentration of stress, making abnormalities such as cracks, peeling, and voids less likely to occur.

[0014] The semiconductor package of the present invention will be described in detail below.

[0015] <Encapsulating Layer> The encapsulating layer preferably includes an encapsulating material and at least one semiconductor die, and the semiconductor die is embedded in the encapsulating material.

[0016] [Sealant] The sealant is not particularly limited and any known sealant can be used, but it is preferably a sealant obtained by curing a curable composition (curable adhesive). Examples of the curable composition include photocurable compositions such as ultraviolet-curable compositions, reactive curable compositions such as anaerobic-curable and moisture-curable compositions, and thermosetting compositions. Two-component mixture compositions and adhesive sheets may also be used. These curable compositions are preferably curable resin compositions, and examples of resins that can be used include epoxy resins, silicone resins, acrylic resins, phenolic resins, polyimide resins, imide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, and EVA (ethylene vinyl acetate) resins. The curable resin composition may further contain other components such as fillers, polymerization initiators, curing agents, and desiccants in addition to the resin. These components may be any conventionally known components in this field without any particular limitations.

[0017] [Semiconductor Die] In the present invention, a semiconductor die refers to a chip incorporating a circuit, and refers to a die that exhibits functions such as memory and logic. The semiconductor die is preferably a semiconductor chip. The semiconductor die can be obtained, for example, by forming a circuit pattern on a substrate such as silicon and then dividing it into individual pieces. The semiconductor die is not particularly limited, but examples include memory ICs, logic ICs, ASICs, and those further integrated into an integrated circuit.

[0018] The number of semiconductor dies encapsulated in the encapsulation layer is not particularly limited, and may be one or more. Here, a preferred embodiment of the present invention is one in which the encapsulation layer contains two or more semiconductor dies and an encapsulant, and the circuits of two or more of the two or more semiconductor dies are connected to the redistribution layer A. The size of the semiconductor die is not particularly limited, and examples thereof include those with a side length of 100 μm to 10 cm.

[0019] The semiconductor die may include a conductive member that connects to the circuitry of the semiconductor die. Examples of the conductive member include a conductive pad. Examples of materials for the conductive member include copper, aluminum, nickel, vanadium, titanium, chromium, cobalt, gold, tungsten, tin, silver, and alloys containing at least one of these metals. Copper, aluminum, or an alloy containing at least one of these metals is preferred, copper or an alloy containing copper is more preferred, and copper is even more preferred.

[0020] It is preferable that the circuit of the semiconductor die or the conductive member is exposed on one side of the encapsulation layer, and it is preferable that the circuit of the semiconductor die or the conductive member is exposed on one side of the encapsulation layer and neither the circuit of the semiconductor die nor the conductive member is exposed on the other side. It is also preferable that the exposed circuit or the conductive member connected to the circuit is connected to a redistribution layer A described later.

[0021] Conductive Portion The sealing layer preferably further includes a conductive portion that electrically connects one surface of the sealing layer to the other surface of the sealing layer. Such a conductive portion is preferably included as, for example, a conductive through via that penetrates the sealing layer. The conductive portion connects, for example, the redistribution layer A to another member.

[0022] The thickness of the sealing layer is not particularly limited and may be determined in consideration of the thickness of the semiconductor die, etc., but is preferably 1 μm to 500 μmcm, and more preferably 10 μm to 200 μmcm.

[0023] <Rewiring Layer A> The rewiring layer A is a layer that contacts at least one of the semiconductor dies and connects to the circuit of the semiconductor die, and is a layer formed by stacking layers including an insulating pattern A and a conductive pattern A present between the insulating patterns A. Here, the conductive pattern A is connected to the semiconductor die in the encapsulation layer. For example, one preferred embodiment is one in which at least a portion of the conductive pattern A contacts a circuit in the semiconductor member exposed on one surface of the encapsulation layer or a conductive member connected to the circuit.

[0024] [Insulating Pattern A] The volume resistivity of insulating pattern A at 25°C is not particularly limited, but is preferably 1 × 10 ８ It is preferable that the resistance is Ω cm or more, and 1×10 １０ More preferably, it is 1×10 Ω cm or more. １２ The upper limit is not particularly limited, but is, for example, 1×10 １８ It is preferably Ω·cm or less.

[0025] The insulating pattern A has a via structure. The via structure is a structure for connecting adjacent layers in the redistribution layer A, and is preferably a structure such as a substantially cylindrical or polygonal prism. The diameter of the via structure (in the case of a polygonal prism, the circle-equivalent diameter) is not particularly limited, but is preferably 20 to 1 μm, and more preferably 10 to 2 μm. The conductive pattern A is preferably disposed within the via structure. Furthermore, other layers such as a seed layer for forming the conductive pattern A may be further formed within the via structure.

[0026] In the redistribution layer A, the angle (taper angle) formed between the side surface of the via structure and the bottom surface of the insulating pattern A is 70 to 110°, preferably 75 to 105°, and more preferably 80 to 100°. Here, when there is distortion in the side surface of the via structure, the taper angle is defined as the angle formed between the bottom surface of the insulating pattern A and a straight line connecting the end point of the bottom surface of the insulating pattern A and the end point of the exposed portion of the insulating pattern on the upper surface side. In this specification, the bottom surface refers to the surface closer to the sealing layer, and the top surface refers to the surface farther from the sealing layer.

[0027] The taper angle can be determined by cleaving the semiconductor package along a plane including the center of the via structure, polishing the cross section using a milling device ArBlade 5000 (manufactured by Hitachi, Ltd.), obtaining an SEM image using an FE-SEM SU-4800 (manufactured by Hitachi, Ltd.), and measuring the angle between the bottom surface of the insulating pattern A and the side surface of the insulating pattern A. Details of the measurement method can be found in the Examples described below. The taper angle can be adjusted by the structure and content of the resin, polymerizable compound, etc. contained in the negative photosensitive resin composition described below, the numerical aperture, exposure dose, exposure illuminance of the exposure light in forming the insulating pattern A, the type of developer used during development, and the like.

[0028] The insulating pattern A preferably contains a resin, more preferably contains a polyimide, and is preferably a cured product of a composition for forming the insulating pattern A, which will be described later.

[0029] The insulating pattern A preferably contains a resin having a repeating unit represented by the following formula (1-1). Such a resin is contained in the insulating pattern, for example, as a polyimide contained in a negative-type photosensitive resin composition described below, or as a polyimide obtained by cyclizing a polyimide precursor contained in a negative-type photosensitive resin composition. Here, in the insulating pattern, it is preferable that the polymerizable group in the polyimide contained in the negative-type photosensitive resin composition described below, or the polyimide precursor, etc., is polymerized. In formula (1-1), X １ represents an organic group having 4 or more carbon atoms, and Y １ represents an organic group having 4 or more carbon atoms.

[0030] X in formula (1-1) １ and Y １ A preferred embodiment of the formula (4-2) is １ and Y １ This is the same as the preferred embodiment of the above.

[0031] Among them, X in formula (1-1) １ and Y １are each independently an organic group containing a structure in which two or more hydrogen atoms have been removed from a structure represented by any one of the following formulas (V-1) to (V-4): In formula (V-2), R Ｘ１ are each independently a hydrogen atom, an alkyl group, or a halogenated alkyl group. Ｘ２ and R Ｘ３ each independently represents a hydrogen atom or a substituent, R Ｘ２ and R Ｘ３ may be bonded to form a ring structure.

[0032] Preferred embodiments of the organic group containing a structure in which two or more hydrogen atoms have been removed from a structure represented by any one of formulas (V-1) to (V-4) will be described later.

[0033] The elongation at break of the insulating pattern A is preferably 30% or more, more preferably 40% or more, and even more preferably 50% or more. There are no particular limitations on the upper limit of the elongation at break, and it is preferably, for example, 100% or less. The elongation at break is measured using a tensile tester (Tensilon) at a crosshead speed of 300 mm / min in an environment of 25°C and 65% RH (relative humidity) according to the method described in JIS-K6251. The elongation at break can be adjusted by the structure and content of the resin, polymerizable compound, etc. contained in the negative photosensitive resin composition described below.

[0034] The glass transition temperature of the insulating pattern A is preferably 200°C or higher, more preferably 210°C or higher, and even more preferably 220°C or higher. The upper limit of the glass transition temperature is not particularly limited, but can be, for example, 350°C or lower. The glass transition temperature can be measured by varying the temperature conditions of the insulating pattern A in the following order (1) to (4), creating a differential scanning calorimetry curve, and measuring the temperature at the intersection of a line extending the low-temperature baseline of the differential scanning calorimetry curve toward the high-temperature side and a tangent drawn at the point where the gradient of the curve in the stepwise change portion of the glass transition is maximum. (1) Heat from 25°C to 300°C at a rate of 10°C / min. (2) Cool from 300°C to 25°C. (3) Heat from 25°C to 500°C at a rate of 10°C / min. (4) Cool from 500°C to 25°C. The glass transition temperature can be adjusted by the structure and content of the specific resin, polymerizable compound, etc. contained in the negative-type photosensitive resin composition, which will be described later.

[0035] The Young's modulus of the insulating pattern A is preferably 2.7 GPa or more. The Young's modulus is more preferably 2.8 GPa or more, and even more preferably 3.0 GPa or more. There are no particular limitations on the upper limit of the Young's modulus, but it is preferably 10.0 GPa or less, for example. The Young's modulus (modulus) is measured using a tensile tester (Tensilon) at a crosshead speed of 300 mm / min in an environment of 25°C and 65% RH (relative humidity) with reference to the method described in JIS-K6251:2017.

[0036] The coefficient of thermal expansion (CTE) of insulating pattern A is preferably 0 to 80 ppm / K, more preferably 5 to 75 ppm / K, and even more preferably 10 to 70 ppm / K. The coefficient of thermal expansion of insulating pattern A is measured by the following method. The elongation (displacement) of insulating pattern A is measured while changing the temperature using a thermomechanical analyzer / thermal expansion coefficient measuring device, Discovery TMA, manufactured by TA Instruments Japan Co., Ltd. The heating and cooling conditions during evaluation are as follows (1) to (4): (1) Raise the temperature from room temperature to 130°C at a heating rate of 5°C / min. (2) Lower the temperature from 130°C to 10°C at a heating rate of 5°C / min. (3) Raise the temperature from 10°C to 220°C at a heating rate of 5°C / min. (4) Allow to cool naturally to room temperature. The elongation (displacement) of the sample is measured during the temperature increase and decrease processes of (1) to (4) above, and the thermal expansion coefficient is calculated by dividing the longitudinal elongation (displacement) of the sample at 25°C and 125°C in process (3) by the temperature.

[0037] [Conductive Pattern A] The volume resistivity of the conductive pattern A at 25°C is not particularly limited, but is preferably 1×10 －５ It is preferably Ω cm or less, and 1×10 －６ It is more preferable that the resistance is Ω cm or less, and 1×10 －７ The lower limit is not particularly limited, but for example, it is 1×10 －１１ It is preferably Ω·cm or more.

[0038] Metal is preferred as the material constituting the conductive pattern A. The metal is not particularly limited and any existing metal species can be used, but examples include copper, aluminum, nickel, vanadium, titanium, chromium, cobalt, gold, tungsten, tin, silver, and alloys containing at least one of these metals, copper, aluminum, or alloys containing at least one of these metals are preferred, copper or an alloy containing copper is more preferred, and copper is even more preferred.

[0039] The conductive pattern A preferably includes a line and space pattern. The line and space pattern is included, for example, as a line and space pattern in which the conductive pattern A is a line portion and the insulating pattern A is a space portion. When the conductive pattern A includes a line pattern, the minimum line width of the line pattern is preferably 0.1 to 20 μm, more preferably 0.2 to 15 μm, and even more preferably 0.3 to 10 μm.

[0040] The conductive pattern A preferably has a barrier layer at least in part. The conductive pattern A preferably has a barrier layer between the conductive pattern A and the insulating pattern A, and at least one of the interfaces between the redistribution layer A and the outside (i.e., the positions where the conductive pattern A is exposed in the redistribution layer A). By having a barrier layer, it is possible to prevent the material (metal, etc.) constituting the conductive pattern from migrating to other members such as the insulating pattern A and the sealing layer.

[0041] The material constituting the barrier layer is not particularly limited, but examples thereof include tungsten, titanium, and an alloy containing at least one of these metals. Alternatively, the barrier layer may be formed using a metal having a lower ionization tendency than the material constituting the conductive pattern A.

[0042] [Configuration of Redistribution Layer A] The redistribution layer A is formed so as to be electrically connectable to a conductive connection portion described later. Specifically, the redistribution layer A may have a conductive pattern A exposed on a surface other than the surface that contacts the sealing layer, or a barrier layer in contact with the conductive pattern A exposed. For example, the exposed conductive pattern A or barrier layer is connected to a conductive connection portion described later, thereby electrically connecting the redistribution layer A to another member.

[0043] Furthermore, the redistribution layer A may include a conductive pad in the outermost layer (i.e., the layer farthest from the sealing layer). Metal is preferred as the material for the conductive pad. There are no particular limitations on the metal, and existing metal species can be used. Examples of the metal include copper, aluminum, nickel, vanadium, titanium, chromium, cobalt, gold, tungsten, tin, silver, and alloys containing at least one of these metals. Copper, aluminum, or alloys containing at least one of these metals are preferred, copper or alloys containing copper are more preferred, and copper is even more preferred. When the conductive pad is included, the conductive pattern A is electrically connected to other components via the conductive pad.

[0044] The rewiring layer A is a layer formed by laminating layers including an insulating pattern A and a conductive pattern A. The rewiring layer A preferably includes 1 to 20 layers, and more preferably 2 to 10 layers, including an insulating pattern A and a conductive pattern A.

[0045] The thickness of the rewiring layer A is preferably 1 to 100 μm, more preferably 1 to 50 μm, and even more preferably 1 to 20 μm.

[0046] An example of the redistribution layer A will be described with reference to the drawings. FIG. 1 is a schematic cross-sectional view showing an example of the redistribution layer A. The redistribution layer A is formed to include an insulating pattern A12, a conductive pattern A14, and a conductive pad 16. The conductive pattern A14 is connected to a semiconductor die included in the encapsulation layer at an exposed portion 18. A conductive connection portion, which will be described later, is further formed on the conductive pad. Here, the area surrounded by a dashed line in the redistribution layer A corresponds to the via structure. In FIG. 1, the redistribution layer A is illustrated as including three layers each including an insulating pattern A and a conductive pattern A. FIG. 2 is an enlarged view of the portion enclosed by the dashed line in FIG. 1. In FIG. 2, θ is the angle (taper angle) formed between the side surface of the via structure and the bottom surface of the insulating pattern A.

[0047] <Another Semiconductor Die> The semiconductor package of the present invention preferably further includes one or more semiconductor dies that are present outside the encapsulating layer and are connected to the redistribution layer A. Preferred aspects of the other semiconductor dies are the same as the preferred aspects of the semiconductor dies included in the encapsulating layer described above, except that they are not encapsulated in the encapsulating layer. The other semiconductor dies are preferably disposed, for example, on the surface of the encapsulating layer opposite to the redistribution layer A, and are connected to the redistribution layer A via the conductive portion described above.

[0048] When the semiconductor package of the present invention includes other semiconductor dies, the number of other semiconductor dies may be one or more, preferably 1 to 10, and more preferably 1 to 4. In such an embodiment, when two or more semiconductor dies are included, the semiconductor dies may be the same or different.

[0049] <Conductive Connection Portion> The semiconductor package of the present invention further includes a conductive connection portion on a surface of the redistribution layer A different from the surface that contacts the sealing layer. The conductive connection portion preferably has a substantially spherical depression shape, a substantially columnar shape, or a bonding pad structure with an average diameter of 5 μm or less. The semiconductor package of the present invention may also include a barrier layer between the redistribution layer A and the conductive connection portion.

[0050] When the conductive connection portion has a substantially spherical indentation shape, the conductive connection portion is preferably a solder ball, a ball grid array (BGA) ball, or a C4 bump. Figure 3(a) is a schematic cross-sectional view of a conductive connection portion having a substantially spherical indentation shape. In Figure 3(a), the conductive connection portion 102 is connected to a conductive pattern A108 in the outermost layer of the redistribution layer A via a conductive pad 104, and the conductive pattern A108 is formed between insulating patterns A106 in the outermost layer of the redistribution layer A. A barrier layer may be formed between the conductive pad 104 and the conductive pattern A108.

[0051] When the conductive connection portion has a substantially spherical depression shape, the material constituting the conductive connection portion is not particularly limited, but is preferably Sn, Pb, Ag, Cu, Ni, Bi, or an alloy containing any of these. When the conductive connection portion has a substantially spherical depression shape, the height of the conductive connection portion is preferably 50 μm or less, more preferably 20 to 50 μm, and even more preferably 20 to 40 μm.

[0052] When the conductive connection portion is substantially columnar, it is preferable that the conductive connection portion be a pillar having a solder member on the upper portion. FIG. 3( b) is a schematic cross-sectional view of a case where the conductive connection portion is substantially columnar. In FIG. 3( b), the conductive connection portion 102 is a member consisting of a solder member 110 and a pillar 112. In FIG. 3( b), the solder member 110 is depicted as being hemispherical, but this shape is not particularly limited, and the solder member 110 may be cylindrical or have a flat top. In FIG. 3( b), the conductive connection portion 102 is connected to the conductive pattern A108, and the conductive pattern A108 is formed between the insulating patterns A106.

[0053] When the conductive connection portion is substantially columnar, the material constituting the pillar is not particularly limited, but is preferably Sn, Pb, Ag, Cu, Ni, Bi, or an alloy containing any of these, and more preferably Cu. When a solder member is included, the material constituting the solder member is not particularly limited, but is preferably Sn, Pb, Ni, Bi, or an alloy containing any of these. When the conductive connection portion is substantially columnar, the height of the conductive connection portion is preferably 20 μm or less, more preferably 10 to 20 μm, and even more preferably 10 to 15 μm.

[0054] When the conductive connection portion has a bonding pad structure with an average diameter of 5 μm or less, it is preferable that the conductive connection portion is formed to be flush with the insulating pattern A so that the conductive connection portion and the insulating member are substantially flat. Figure 3(c) is a schematic cross-sectional view of a case where the conductive connection portion has a bonding pad structure with an average diameter of 5 μm or less. In Figure 3(c), the conductive connection portion 102 is connected to the conductive pattern A108, and the conductive pattern A108 is formed between the insulating patterns A106.

[0055] When the conductive connection portion is a bonding pad structure having an average diameter of 5 μm or less, the material constituting the bonding pad structure is not particularly limited, but is preferably Sn, Pb, Ag, Cu, Ni, Bi, or an alloy containing any of these, and more preferably Cu. When the conductive connection portion is a bonding pad structure having an average diameter of 5 μm or less, the average diameter is 5 μm or less, preferably 1 to 5 μm, and more preferably 2 to 5 μm. The average diameter is the average diameter of the upper surface of the bonding pad structure. When the upper surface of the bonding pad structure is not circular, the average diameter refers to the average value of the circle-equivalent diameter.

[0056] <Substrate> The semiconductor package of the present invention has a substrate connected to the conductive connection portion. The material of the substrate is not particularly limited, and includes semiconductor substrates such as silicon, silicon nitride, polysilicon, silicon oxide, and amorphous silicon; quartz, glass, optical films, ceramic materials, vapor deposition films, magnetic films, reflective films, metal substrates such as Ni, Cu, Cr, and Fe; paper; SOG (Spin-on-Glass); TFT (Thin Film Transistor) array substrates; and plasma display panel (PDP) electrode plates. These substrates may have a surface layer such as an adhesion layer or an oxide layer formed from hexamethyldisilazane (HMDS) or a sealant (epoxy molding compound: EMC). The substrate may be wafer-shaped or panel-shaped. In the present invention, semiconductor substrates are particularly preferred, with silicon substrates (silicon wafers) being more preferred. The substrate may have an electronic circuit region including an electronic circuit. The electronic circuit may include elements such as semiconductors. The electronic circuit is preferably electrically connected to the conductive pattern A. The substrate may further have a conductive member on a surface different from the surface connected to the conductive pattern A for connecting to another member.

[0057] <Specific Example of Semiconductor Package> Specific examples of the semiconductor package of the present invention will be described below with reference to the drawings, but the present invention is not limited thereto. FIG. 4 is a schematic cross-sectional view showing an example of a semiconductor package of the present invention. In FIG. 4, a semiconductor package 20 includes a rewiring layer A including an encapsulating layer 22, an insulating pattern A12, a conductive pattern A14, and conductive pads 16, a conductive connection portion 24, and a substrate 26. In FIG. 4, the thickness of each layer has been appropriately modified to facilitate easy viewing of the drawing. In reality, the thickness of the rewiring layer A may be several tens to several hundreds of times thinner than the encapsulating layer 22, and may differ from the actual scale. This also applies to other drawings. The encapsulating layer 22 includes two semiconductor dies 28 and an encapsulant 30. The semiconductor dies 28 are connected to the conductive pattern A14 in the rewiring layer A. In FIG. 4, a conductive connection portion 24 is formed on the side of the rewiring layer A opposite the encapsulating layer 22. While the conductive connection portion 24 is depicted as being approximately spherically recessed in FIG. 4, it may have other shapes, such as a generally columnar shape or a bonding pad, as described above. 4, the conductive connection portion 24 is connected to the substrate 26, and an electrode 32 and another conductive connection portion 34 for connecting to other members are arranged on the opposite side of the substrate 26 from the conductive connection portion 24. A known underfill material may be filled in the space between the substrate 26 and the rewiring layer A.

[0058] FIG. 5 is a schematic cross-sectional view showing another example of a semiconductor package according to the present invention. Among the components in FIG. 5 , those with the same reference numerals as those in FIG. 4 are the same as those in FIG. 4 . In the semiconductor package 20 in FIG. 5 , the encapsulation layer 22 includes only one semiconductor die 28, and two other semiconductor dies 38 are connected to the conductive pattern A14 via conductive through vias 36, other conductive pads 40, and other conductive connection portions 42 formed in the encapsulation layer 22. An insulating layer 44 is formed between the encapsulation layer 22 and the other conductive pads 40. A known underfill material may be filled in the space between the redistribution layer A and the substrate 26. The space between the insulating layer 44 and the encapsulation layer 22 may also be filled in with a known underfill material. Furthermore, the semiconductor die 38 may be encapsulated with a known encapsulant.

[0059] (Method for manufacturing a semiconductor package) A method for manufacturing a semiconductor package of the present invention includes: an encapsulating layer forming step of embedding a semiconductor die in an encapsulant and forming an encapsulating layer having one surface on which a circuit of the semiconductor die is exposed and the other surface on which the circuit of the semiconductor die is not exposed; a rewiring layer A forming step of laminating a layer including an insulating pattern A and a conductive pattern A present between patterns of the insulating pattern A on the surface of the encapsulating layer on which the circuit is exposed, to form a rewiring layer A; a connection part forming step of forming a conductive connection part on a surface of the rewiring layer A different from the surface that contacts the encapsulating layer; and a step of connecting the connection part to a substrate, wherein the rewiring layer A forming step includes forming a via structure using the insulating pattern A, and an angle between a side surface of the via structure and a bottom surface of the insulating pattern A is 70 to 110°.

[0060] The semiconductor package manufacturing method of the present invention can provide the semiconductor package described above, which is to say, can provide a semiconductor package that is suppressed from developing defects such as cracks, peeling, and voids during long-term heat resistance tests and humidity resistance tests.

[0061] <Sealing Layer Forming Step> The semiconductor package manufacturing method of the present invention includes an encapsulating layer forming step. The encapsulating layer forming step provides an encapsulating layer including an encapsulant and a semiconductor die embedded in the encapsulant, with the circuit of the semiconductor die exposed on one side and the circuit of the component not exposed on the other side. The encapsulating layer forming step can be performed, for example, by placing the semiconductor die on a carrier wafer (temporary support), applying the curable composition described above so as to embed the semiconductor die, and curing the composition. A known temporary adhesive layer may also be formed on the carrier wafer. The application and curing of these layers can be performed with reference to known methods. Preferred embodiments of the curable composition and semiconductor die are as described above.

[0062] In addition, in the encapsulation layer formation step, the surface of the encapsulant may be polished after curing. Examples of such polishing include, but are not limited to, chemical mechanical polishing (CMP) and physical polishing. For example, by polishing the encapsulant after curing on the side of the semiconductor die having the circuit, the circuit of the semiconductor die can be exposed on the surface of the encapsulation layer. Alternatively, any method known in the art can be used for the encapsulation layer formation step, as long as it forms an encapsulation layer. Alternatively, the encapsulation layer formation step may not involve polishing, and the circuit may be exposed from the encapsulation layer by simply not encapsulating the side of the semiconductor die on which the circuit is located.

[0063] A preferred embodiment of the sealing layer obtained by the sealing layer forming step is the same as the preferred embodiment of the sealing layer in the semiconductor package of the present invention described above, except that the conductive portion may not be formed in the sealing layer forming step, and the conductive portion may be formed after the rewiring layer A forming step, as described below.

[0064] <Passivation Layer Forming Step> The semiconductor package manufacturing method of the present invention may further include a passivation layer forming step of forming a passivation layer after the encapsulation layer forming step. The passivation layer forming step is preferably performed after the encapsulation layer forming step and before the rewiring layer A forming step. The passivation layer is formed by coating the surface of the semiconductor die with a passivation film. Forming the passivation layer may suppress the influence of the outside air, the adhesion of dust, and contamination by water or metals on the semiconductor die. The material of the passivation layer is not particularly limited, but may be SiO ２ , SiN, etc. In addition, resins such as polyimide may also be used. The coating method is not particularly limited and known methods can be used. For example, when it is desired to coat with SiN, CVD (chemical vapor deposition) or the like can be used.

[0065] <Rewiring layer A forming step> The method for manufacturing a semiconductor package of the present invention includes a rewiring layer A forming step of forming a rewiring layer A including an insulating pattern A and a conductive pattern A present between the insulating patterns A on the surface of the sealing layer where the circuit is exposed. By the rewiring layer A forming step, the rewiring layer A is formed on the surface of the sealing material where the circuit is exposed. Preferred aspects of the rewiring layer A are the same as the preferred aspects of the rewiring layer A in the semiconductor package of the present invention described above.

[0066] The redistribution layer A formation process preferably includes applying a negative photosensitive resin composition onto the sealing layer to form a film (film formation process). That is, the insulating pattern A in the redistribution layer A is preferably formed using a negative photosensitive resin composition. Furthermore, the redistribution layer A formation process more preferably includes the above-mentioned film formation process, an exposure process in which the film formed by the film formation process is selectively exposed to light, and a development process in which the film exposed by the exposure process is developed using a developer to form a pattern. The redistribution layer A formation process particularly preferably includes the above-mentioned film formation process, the above-mentioned exposure process, the above-mentioned development process, and at least one of a heating process in which the pattern obtained by the development process is heated and a post-development exposure process in which the pattern obtained by the development process is exposed to light. Details of each process will be described below. Details of the negative photosensitive resin composition (hereinafter also simply referred to as "composition") will be described later.

[0067] <Film Forming Step> The rewiring layer A forming step preferably includes a film forming step of applying a composition onto a sealing layer to form a film.

[0068] Coating is preferred as a means for applying the composition to the sealing layer. Specific application methods include dip coating, air knife coating, curtain coating, wire bar coating, gravure coating, extrusion coating, spray coating, spin coating, slit coating, and inkjet coating. From the viewpoint of uniformity of film thickness, spin coating, slit coating, spray coating, and inkjet coating are preferred, and from the viewpoint of uniformity of film thickness and productivity, spin coating and slit coating are more preferred. A film of the desired thickness can be obtained by adjusting the solids concentration of the composition and coating conditions depending on the application method. Furthermore, the coating method can be appropriately selected depending on the shape of the substrate. For circular substrates such as wafers, spin coating, spray coating, inkjet coating, etc. are preferred, while for rectangular substrates, slit coating, spray coating, inkjet coating, etc. are preferred. In the case of spin coating, for example, it can be applied at a rotation speed of 500 to 3,500 rpm for about 10 seconds to 3 minutes. Alternatively, a coating film formed by applying the composition to a temporary support using the above-described application method can be transferred onto the sealing layer. Regarding the transfer method, the preparation methods described in paragraphs 0023 and 0036 to 0051 of JP-A No. 2006-023696 and paragraphs 0096 to 0108 of JP-A No. 2006-047592 can be suitably used. A step of removing excess film from the edge of the sealing layer may also be performed. Examples of such a step include edge bead rinsing (EBR) and back rinsing. A pre-wetting step may also be employed in which various solvents are applied to the substrate before applying the composition to the sealing layer to improve the wettability of the sealing layer, and then the composition is applied.

[0069] <Drying Step> After the film formation step (layer formation step), the above film may be subjected to a step (drying step) of drying the formed film (layer) to remove the solvent. That is, the redistribution layer A formation step may include a drying step of drying the film formed in the film formation step. The drying step is preferably carried out after the film formation step and before the exposure step. The drying temperature of the film in the drying step is preferably 50 to 150°C, more preferably 70 to 130°C, and even more preferably 90 to 110°C. Drying may also be carried out under reduced pressure. The drying time is, for example, 30 seconds to 20 minutes, preferably 1 to 10 minutes, and more preferably 2 to 7 minutes.

[0070] <Exposure Step> The film may be subjected to an exposure step in which the film is selectively exposed to light. The rewiring layer A formation step may include an exposure step in which the film formed in the film formation step is selectively exposed to light. Selective exposure means that a portion of the film is exposed to light. Furthermore, selective exposure forms exposed regions (exposed portions) and unexposed regions (non-exposed portions) in the film. The exposure dose is not particularly limited as long as it can harden the film, but for example, it is 50 to 10,000 mJ / cm in terms of exposure energy at a wavelength of 365 nm. ２ is preferred, and 200 to 8,000 mJ / cm ２ is more preferred.

[0071] The exposure wavelength can be appropriately determined within the range of 190 to 1,000 nm, and is preferably 240 to 550 nm.

[0072] The exposure wavelengths, in relation to the light source, are: (1) semiconductor laser (wavelengths 830 nm, 532 nm, 488 nm, 405 nm, 375 nm, 355 nm, etc.); (2) metal halide lamp; (3) high-pressure mercury lamp, g-line (wavelength 436 nm), h-line (wavelength 405 nm), i-line (wavelength 365 nm), broad (three wavelengths of g, h, and i-line); (4) excimer laser, KrF excimer laser (wavelength 248 nm), ArF excimer laser (wavelength 193 nm), F ２Examples of such light include excimer laser (wavelength 157 nm), (5) extreme ultraviolet light (EUV) (wavelength 13.6 nm), (6) electron beam, and (7) YAG laser second harmonic 532 nm and third harmonic 355 nm. Exposure using a high-pressure mercury lamp is particularly preferred, and exposure using i-line is more preferred from the viewpoint of exposure sensitivity. The exposure method is not particularly limited as long as at least a part of the film is exposed, and examples thereof include exposure using a photomask and exposure by laser direct imaging.

[0073] Here, in the step of forming the rewiring layer A, it is preferable to expose the photosensitive film formed from the negative photosensitive resin composition using an i-line stepper. The taper angle can be adjusted by appropriately adjusting the numerical aperture, exposure illuminance, exposure dose, etc. of the i-line stepper.

[0074] The numerical aperture of the i-line stepper is preferably 0.10 to 0.60. A high numerical aperture is preferable when high resolution is required, and a low numerical aperture is preferable when a wide focus margin is required. A high numerical aperture is preferably 0.40 to 0.60, more preferably 0.45 to 0.57, and even more preferably 0.47 to 0.55. A low numerical aperture is preferably 0.10 to 0.30, more preferably 0.13 to 0.27, and even more preferably 0.15 to 0.25.

[0075] The exposure illuminance of the i-line stepper is 500 to 50,000 W / m ２ is preferably 1000 to 30000 W / m ２ More preferably, it is 3000 to 20000 W / m ２ It is more preferable that:

[0076] The exposure dose by the i-line stepper is 1 to 2000 mJ / cm ２ is preferably 50 to 1500 mJ / cm ２ More preferably, it is 100 to 700 mJ / cm ２ It is more preferable that:

[0077] <Post-Exposure Baking Step> The film may be subjected to a heating step (post-exposure baking step) after exposure. That is, the rewiring layer A formation step may include a post-exposure baking step in which the film exposed in the exposure step is heated. The post-exposure baking step can be performed after the exposure step and before the development step. The heating temperature in the post-exposure baking step is preferably 50°C to 140°C, more preferably 60°C to 120°C. The heating time in the post-exposure baking step is preferably 30 seconds to 300 minutes, more preferably 1 minute to 10 minutes. The temperature rise rate in the post-exposure baking step from the temperature at the start of heating to the maximum heating temperature is preferably 1 to 12°C / min, more preferably 2 to 10°C / min, and even more preferably 3 to 10°C / min. The temperature rise rate may also be changed as appropriate during heating. The heating means in the post-exposure baking step is not particularly limited, and known hot plates, ovens, infrared heaters, etc. may be used. It is also preferable to carry out the heating in an atmosphere of low oxygen concentration by flowing an inert gas such as nitrogen, helium, or argon.

[0078] <Development step> The above-mentioned film after exposure may be subjected to a development step in which it is developed using a developer to form a pattern. That is, the redistribution layer A formation step may include a development step in which the film exposed in the exposure step is developed using a developer to form a pattern. By performing development, one of the exposed and unexposed parts of the film is removed to form a pattern. Here, development in which the unexposed parts of the film are removed in the development step is called negative development, and development in which the exposed parts of the film are removed in the development step is called positive development. Here, with regard to the via structure in the insulating pattern A, it is preferable that the via structure is formed by development using a solvent as a developer.

[0079] [Developer] The developer used in the development step may be an aqueous alkaline solution or a developer containing an organic solvent.

[0080] When the developer is an alkaline aqueous solution, examples of the basic compound that can be contained in the alkaline aqueous solution include inorganic alkalis, primary amines, secondary amines, tertiary amines, and quaternary ammonium salts. Preferred are TMAH (tetramethylammonium hydroxide), potassium hydroxide, sodium carbonate, sodium hydroxide, sodium silicate, sodium metasilicate, ammonia, ethylamine, n-propylamine, diethylamine, di-n-butylamine, triethylamine, methyldiethylamine, dimethylethanolamine, triethanolamine, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, tetrapentylammonium hydroxide, tetrahexylammonium hydroxide, tetraoctylammonium hydroxide, ethyltrimethylammonium hydroxide, butyltrimethylammonium hydroxide, methyltriamylammonium hydroxide, dibutyldipentylammonium hydroxide, dimethylbis(2-hydroxyethyl)ammonium hydroxide, trimethylphenylammonium hydroxide, trimethylbenzylammonium hydroxide, triethylbenzylammonium hydroxide, pyrrole, and piperidine, and more preferred is TMAH. The content of the basic compound in the developer is preferably from 0.01 to 10% by mass, more preferably from 0.1 to 5% by mass, and even more preferably from 0.3 to 3% by mass, based on the total mass of the developer.

[0081] When the developer contains an organic solvent, the organic solvent may be a compound described in paragraph

[0387] of WO 2021 / 112189, the contents of which are incorporated herein by reference. Suitable examples of alcohols include methanol, ethanol, propanol, isopropanol, butanol, pentanol, octanol, diethylene glycol, propylene glycol, methyl isobutyl carbinol, and triethylene glycol, and suitable examples of amides include N-methylpyrrolidone, N-ethylpyrrolidone, and dimethylformamide.

[0082] When the developer contains an organic solvent, the organic solvent may be used alone or in combination. In the present invention, a developer containing at least one selected from the group consisting of cyclopentanone, γ-butyrolactone, dimethyl sulfoxide, N-methyl-2-pyrrolidone, and cyclohexanone is particularly preferred, a developer containing at least one selected from the group consisting of cyclopentanone, γ-butyrolactone, and dimethyl sulfoxide is more preferred, and a developer containing cyclopentanone is particularly preferred.

[0083] When the developer contains an organic solvent, the content of the organic solvent relative to the total mass of the developer is preferably 50% by mass or more, more preferably 70% by mass or more, even more preferably 80% by mass or more, and particularly preferably 90% by mass or more. Alternatively, the content may be 100% by mass.

[0084] When the developer contains an organic solvent, the developer may further contain at least one of a basic compound and a base generator. When at least one of the basic compound and the base generator in the developer permeates into the pattern, the performance of the pattern, such as breaking elongation, may be improved.

[0085] As the basic compound, from the viewpoint of reliability when it remains in the film after curing (adhesion to the substrate when the cured product is further heated), an organic base is preferred. As the basic compound, a basic compound having an amino group is preferred, and primary amines, secondary amines, tertiary amines, ammonium salts, tertiary amides, etc. are preferred. However, to promote the imidization reaction, primary amines, secondary amines, tertiary amines, or ammonium salts are preferred, secondary amines, tertiary amines, or ammonium salts are more preferred, secondary amines or tertiary amines are even more preferred, and tertiary amines are particularly preferred. As the basic compound, from the viewpoint of the mechanical properties (elongation at break) of the cured product, it is preferred that it is difficult for the amount remaining to decrease before heating due to vaporization, etc., is preferred. Therefore, the boiling point of the basic compound is preferably 30°C to 350°C at normal pressure (101,325 Pa), more preferably 80°C to 270°C, and even more preferably 100°C to 230°C. The boiling point of the basic compound is preferably higher than the temperature obtained by subtracting 20° C. from the boiling point of the organic solvent contained in the developer, and more preferably higher than the boiling point of the organic solvent contained in the developer. For example, when the boiling point of the organic solvent is 100° C., the boiling point of the basic compound used is preferably 80° C. or higher, and more preferably 100° C. or higher. The developer may contain only one type of basic compound, or may contain two or more types.

[0086] Specific examples of the basic compound include ethanolamine, diethanolamine, triethanolamine, ethylamine, diethylamine, triethylamine, hexylamine, dodecylamine, cyclohexylamine, cyclohexylmethylamine, cyclohexyldimethylamine, aniline, N-methylaniline, N,N-dimethylaniline, diphenylamine, pyridine, butylamine, isobutylamine, dibutylamine, tributylamine, dicyclohexylamine, DBU (diazabicycloundecene), DABCO (1,4-diazabicyclo[2.2.2]octane), N,N-diisopropylethylamine, tetramethylammonium hydroxide, tetrabutylammonium hydroxide, ethylenediamine, butanediamine, 1,5-diamino Examples of the alkyl ester include pentane, N-methylhexylamine, N-methyldicyclohexylamine, trioctylamine, N-ethylethylenediamine, N,N-diethylethylenediamine, N,N,N',N'-tetrabutyl-1,6-hexanediamine, spermidine, diaminocyclohexane, bis(2-methoxyethyl)amine, piperidine, methylpiperidine, dimethylpiperidine, piperazine, tropane, N-phenylbenzylamine, 1,2-dianilinoethane, 2-aminoethanol, toluidine, aminophenol, hexylaniline, phenylenediamine, phenylethylamine, dibenzylamine, pyrrole, N-methylpyrrole, N,N,N,N-tetramethylethylenediamine, and N,N,N,N-tetramethyl-1,3-propanediamine.

[0087] The preferred embodiments of the base generator are the same as those of the base generator contained in the composition described above. In particular, the base generator is preferably a thermal base generator.

[0088] When the developer contains at least one of a basic compound and a base generator, the content of the basic compound or base generator is preferably 10% by mass or less, more preferably 5% by mass or less, based on the total mass of the developer. The lower limit of the content is not particularly limited, but is preferably, for example, 0.1% by mass or more. When the basic compound or base generator is solid in the environment in which the developer is used, the content of the basic compound or base generator is also preferably 70 to 100% by mass, based on the total solid content of the developer. The developer may contain only one type of basic compound or base generator, or two or more types. When two or more types of at least one of the basic compound and base generator are used, the total content thereof is preferably within the above-mentioned range.

[0089] The developer may further contain other components, such as known surfactants and known defoaming agents.

[0090] [Method of Supplying Developer] The method of supplying the developer is not particularly limited as long as it can form the desired pattern, and includes a method of immersing a substrate on which a film has been formed in the developer, puddle development in which the developer is supplied to the film formed on the substrate using a nozzle, and a method of continuously supplying the developer. The type of nozzle is not particularly limited, and examples include a straight nozzle, a shower nozzle, and a spray nozzle. From the viewpoints of the permeability of the developer, the removability of non-image areas, and production efficiency, a method of supplying the developer using a straight nozzle or a method of continuously supplying the developer using a spray nozzle is preferred, and from the viewpoint of the permeability of the developer to the image areas, a method of supplying using a spray nozzle is more preferred. In addition, a process may be adopted in which the developer is continuously supplied using a straight nozzle, the substrate is spun to remove the developer from the substrate, and after spin drying, the developer is continuously supplied again using a straight nozzle, and the substrate is spun to remove the developer from the substrate, or this process may be repeated multiple times. Methods of supplying the developer in the development process include a process in which the developer is continuously supplied to the substrate, a process in which the developer is kept substantially stationary on the substrate, a process in which the developer is vibrated on the substrate using ultrasound or the like, and a combination thereof.

[0091] The development time is preferably 3 seconds to 10 minutes, more preferably 5 seconds to 5 minutes. The temperature of the developer during development is not particularly limited, but is preferably 10 to 45°C, more preferably 18 to 30°C.

[0092] In the developing step, after the treatment with the developer, the pattern may be further washed (rinsed) with a rinse liquid. Alternatively, a method may be employed in which a rinse liquid is supplied before the developer in contact with the pattern is completely dried.

[0093] [Rinse Liquid] When the developer is an alkaline aqueous solution, for example, water can be used as the rinse liquid. When the developer is a developer containing an organic solvent, for example, a solvent different from the solvent contained in the developer (for example, water, an organic solvent different from the organic solvent contained in the developer) can be used as the rinse liquid.

[0094] When the rinse solution contains an organic solvent, examples of the organic solvent include the same organic solvents as those exemplified when the developer contains an organic solvent. The organic solvent contained in the rinse solution is preferably different from the organic solvent contained in the developer, and more preferably an organic solvent that has a lower solubility for the pattern than the organic solvent contained in the developer.

[0095] When the rinse solution contains an organic solvent, the organic solvent may be used alone or in combination of two or more. The organic solvent is preferably cyclopentanone, γ-butyrolactone, dimethyl sulfoxide, N-methylpyrrolidone, cyclohexanone, PGMEA, or PGME, more preferably cyclopentanone, γ-butyrolactone, dimethyl sulfoxide, PGMEA, or PGME, and even more preferably cyclohexanone or PGMEA.

[0096] When the rinse solution contains an organic solvent, the organic solvent preferably accounts for 50% by mass or more, more preferably 70% by mass or more, and even more preferably 90% by mass or more of the total mass of the rinse solution, and may also account for 100% by mass of the total mass of the rinse solution.

[0097] The rinse solution may contain at least one of a basic compound and a base generator. Although not particularly limited, when the developer contains an organic solvent, an embodiment in which the rinse solution contains the organic solvent and at least one of a basic compound and a base generator is also one of the preferred embodiments of the present invention. Examples of the basic compound and base generator contained in the rinse solution include the compounds exemplified as the basic compound and base generator that may be contained when the developer contains an organic solvent, and the same applies to preferred embodiments. The basic compound and base generator contained in the rinse solution may be selected taking into consideration the solubility in the solvent in the rinse solution, etc.

[0098] When the rinse solution contains at least one of a basic compound and a base generator, the content of the basic compound or base generator is preferably 10% by mass or less, and more preferably 5% by mass or less, based on the total mass of the rinse solution. The lower limit of the content is not particularly limited, but is preferably 0.1% by mass or more, for example. When the basic compound or base generator is solid in the environment in which the rinse solution is used, the content of the basic compound or base generator is also preferably 70 to 100% by mass, based on the total solid content of the rinse solution. When the rinse solution contains at least one of a basic compound and a base generator, the rinse solution may contain only one type of at least one of the basic compound and the base generator, or may contain two or more types. When at least one of the basic compound and the base generator is two or more types, the total content thereof is preferably within the above-mentioned range.

[0099] The rinse liquid may further contain other components, such as known surfactants and known defoaming agents.

[0100] [Method of Supplying Rinse Liquid] The method of supplying the rinse liquid is not particularly limited as long as it can form a desired pattern, and examples thereof include a method of immersing the substrate in the rinse liquid, a method of supplying the rinse liquid to the substrate by puddling, a method of supplying the rinse liquid to the substrate by showering, and a method of continuously supplying the rinse liquid onto the substrate by means of a straight nozzle or the like. From the viewpoints of the permeability of the rinse liquid, the removability of non-image areas, and production efficiency, methods of supplying the rinse liquid using a shower nozzle, straight nozzle, spray nozzle, etc. are available, and a method of continuously supplying using a spray nozzle is preferred, and from the viewpoint of the permeability of the rinse liquid into the image areas, a method of supplying using a spray nozzle is more preferred. The type of nozzle is not particularly limited, and examples include a straight nozzle, shower nozzle, spray nozzle, etc. That is, the rinsing step is preferably a step of supplying or continuously supplying the rinse liquid to the exposed film using a straight nozzle, and more preferably a step of supplying the rinse liquid using a spray nozzle. The method of supplying the rinse liquid in the rinsing step may include a step of continuously supplying the rinse liquid to the substrate, a step of keeping the rinse liquid substantially stationary on the substrate, a step of vibrating the rinse liquid on the substrate by ultrasonic waves or the like, and a combination of these steps.

[0101] The rinsing time is preferably 10 seconds to 10 minutes, more preferably 20 seconds to 5 minutes. The temperature of the rinsing liquid during rinsing is not particularly limited, but is preferably 10 to 45°C, more preferably 18 to 30°C.

[0102] The developing step may include a step of contacting the pattern with a treatment liquid after treatment with a developer or after washing the pattern with a rinse liquid. Alternatively, a method may be employed in which the treatment liquid is supplied before the developer or rinse liquid in contact with the pattern is completely dried.

[0103] The treatment liquid may include a treatment liquid containing at least one of water and an organic solvent, and at least one of a basic compound and a base generator. Preferred aspects of the organic solvent, the basic compound, and the base generator are the same as the preferred aspects of the organic solvent, the basic compound, and the base generator used in the rinse liquid described above. The treatment liquid can be supplied to the pattern using the same method as the rinse liquid described above, and preferred aspects are also the same.

[0104] The content of the basic compound or base generator in the treatment liquid is preferably 10% by mass or less, and more preferably 5% by mass or less, relative to the total mass of the treatment liquid. There is no particular limitation on the lower limit of the content, but it is preferably, for example, 0.1% by mass or more. Furthermore, when the basic compound or base generator is solid in the environment in which the treatment liquid is used, the content of the basic compound or base generator is also preferably 70 to 100% by mass, relative to the total solid content of the treatment liquid. When the treatment liquid contains at least one of a basic compound and a base generator, the treatment liquid may contain only one type of at least one of the basic compound and the base generator, or may contain two or more types. When there are two or more types of at least one of the basic compound and the base generator, it is preferable that the total amount thereof is within the above-mentioned range.

[0105] <Heating Step> The pattern obtained by the development step (if a rinsing step is performed, the pattern after rinsing) may be subjected to a heating step in which the pattern obtained by the development step is heated. That is, the rewiring layer A formation step may include a heating step in which the pattern obtained by the development step is heated. In the heating step, a resin such as a polyimide precursor is cyclized to form a resin such as a polyimide. In addition, crosslinking of unreacted crosslinkable groups in the specific resin or a crosslinking agent other than the specific resin also proceeds. The heating temperature (maximum heating temperature) in the heating step is preferably 50 to 450°C, more preferably 150 to 350°C, even more preferably 150 to 250°C, even more preferably 160 to 250°C, and particularly preferably 160 to 230°C.

[0106] The heating step is preferably a step in which the cyclization reaction of the polyimide precursor is promoted within the pattern by the action of a base or the like generated from the base generator due to heating.

[0107] The heating step is preferably carried out at a temperature increase rate of 1 to 12°C / min from the temperature at the start of heating to the maximum heating temperature. The temperature increase rate is more preferably 2 to 10°C / min, and even more preferably 3 to 10°C / min. By setting the temperature increase rate to 1°C / min or more, it is possible to prevent excessive volatilization of the acid or solvent while ensuring productivity, and by setting the temperature increase rate to 12°C / min or less, it is possible to alleviate residual stress in the cured product. In addition, in the case of an oven capable of rapid heating, it is preferable to increase the temperature from the temperature at the start of heating to the maximum heating temperature at a temperature increase rate of 1 to 8°C / sec, more preferably 2 to 7°C / sec, and even more preferably 3 to 6°C / sec.

[0108] The temperature at the start of heating is preferably 20°C to 150°C, more preferably 20°C to 130°C, and even more preferably 25°C to 120°C. The temperature at the start of heating refers to the temperature at the start of the step of heating up to the maximum heating temperature. For example, when a composition is applied to a substrate and then dried, the temperature is the temperature of the film (layer) after this drying, and it is preferable to raise the temperature from, for example, a temperature that is 30 to 200°C lower than the boiling point of the solvent contained in the composition.

[0109] The heating time (heating time at the maximum heating temperature) is preferably from 5 to 360 minutes, more preferably from 10 to 300 minutes, and even more preferably from 15 to 240 minutes.

[0110] In particular, when forming a multilayer laminate, from the viewpoint of interlayer adhesion, the heating temperature is preferably 30° C. or higher, more preferably 80° C. or higher, even more preferably 100° C. or higher, and particularly preferably 120° C. or higher. The upper limit of the heating temperature is preferably 350° C. or lower, more preferably 250° C. or lower, and even more preferably 240° C. or lower.

[0111] Heating may be performed in stages. For example, the temperature may be increased from 25°C to 120°C at a rate of 3°C / min, held at 120°C for 60 minutes, increased from 120°C to 180°C at a rate of 2°C / min, and held at 180°C for 120 minutes. It is also preferable to treat the film while irradiating it with ultraviolet light, as described in U.S. Pat. No. 9,159,547. Such a pretreatment step can improve the film's properties. The pretreatment step may be performed for a short period of time, preferably from 10 seconds to 2 hours, more preferably from 15 seconds to 30 minutes. The pretreatment step may be performed in two or more steps. For example, a first pretreatment step may be performed in the range of 100 to 150°C, followed by a second pretreatment step in the range of 150 to 200°C. Furthermore, cooling may be performed after heating. In this case, the cooling rate is preferably from 1 to 5°C / min.

[0112] The heating step is preferably carried out in an atmosphere with a low oxygen concentration by flowing an inert gas such as nitrogen, helium, or argon, or by carrying out the heating step under reduced pressure, in order to prevent decomposition of the specific resin. The oxygen concentration is preferably 50 ppm (volume ratio) or less, more preferably 20 ppm (volume ratio) or less. The heating means used in the heating step is not particularly limited, and examples thereof include a hot plate, an infrared oven, an electric heating oven, a hot air oven, and an infrared oven.

[0113] <Post-development exposure step> The pattern obtained by the development step (if a rinsing step is performed, the pattern after rinsing) may be subjected to a post-development exposure step in which the pattern obtained by the development step is exposed to light, instead of or in addition to the heating step. That is, the redistribution layer A formation step may include a post-development exposure step in which the pattern obtained by the development step is exposed to light. The redistribution layer A formation step may include a heating step and a post-development exposure step, or may include only one of the heating step and the post-development exposure step. The post-development exposure step can promote, for example, a reaction in which cyclization of a polyimide precursor or the like progresses due to exposure of a photobase generator, or a reaction in which elimination of an acid-decomposable group progresses due to exposure of a photoacid generator. In the post-development exposure step, it is sufficient that at least a portion of the pattern obtained in the development step is exposed, but it is preferable that the entire pattern is exposed. The exposure dose in the post-development exposure step is 50 to 20,000 mJ / cm in terms of exposure energy at a wavelength to which the photosensitive compound has sensitivity. ２ is preferred, and 100 to 15,000 mJ / cm ２ The post-development exposure step can be carried out using, for example, the light source used in the exposure step described above, and it is preferable to use broadband light.

[0114] <Metal Layer Forming Step> The pattern obtained by the developing step (preferably subjected to at least one of a heating step and a post-development exposure step) may be subjected to a metal layer forming step in which a metal layer is formed on the pattern. The pattern obtained by the developing step corresponds to the insulating pattern A, and the metal layer formed by the metal layer forming step corresponds to the conductive pattern A. In other words, the rewiring layer A forming step preferably includes a metal layer forming step in which a metal layer is formed on the pattern obtained by the developing step (preferably subjected to at least one of a heating step and a post-development exposure step).

[0115] The metal layer is not particularly limited, and existing metal species can be used. Examples include copper, aluminum, nickel, vanadium, titanium, chromium, cobalt, gold, tungsten, tin, silver, and alloys containing these metals. Copper and aluminum are more preferred, and copper is even more preferred.

[0116] The method for forming the metal layer is not particularly limited, and existing methods can be applied. For example, the methods described in JP 2007-157879 A, ​​JP 2001-521288 A, JP 2004-214501 A, JP 2004-101850 A, U.S. Patent No. 7,888,181 B2, and U.S. Patent No. 9,177,926 B2 can be used. Examples of suitable methods include photolithography, PVD (physical vapor deposition), CVD (chemical vapor deposition), lift-off, electroplating, electroless plating, etching, printing, and combinations thereof. More specifically, examples include patterning methods that combine sputtering, photolithography, and etching, and patterning methods that combine photolithography and electroplating. Preferred plating methods include electroplating using copper sulfate or copper cyanide plating solutions. Furthermore, the metal layer formation step preferably includes forming a barrier layer on the formed metal layer after the metal layer is formed. The barrier layer can be formed by any conventionally known method without any particular limitation.

[0117] The thickness of the metal layer is preferably 0.01 to 50 μm, more preferably 1 to 10 μm, at the thickest part.

[0118] <Resist Layer Forming Step, Resist Layer Peeling Step> Here, the rewiring layer A forming step may include a resist layer forming step before the metal layer forming step. Furthermore, the rewiring layer A forming step may include a resist layer peeling step after the metal layer forming step. These steps can be performed by a known method. By performing these steps, a line and space pattern or the like can also be formed as the conductive pattern A.

[0119] <Polishing Step> The rewiring layer A forming step may further include, after the metal layer forming step, a polishing step of polishing the surface of the rewiring layer A. Examples of the polishing method include chemical mechanical polishing (CMP) and physical polishing, but are not limited to these, and any known method can be used without particular limitation.

[0120] <Lamination Process> The rewiring layer A forming process of the present invention includes a lamination process. The lamination process is a series of processes including performing at least one of (a) a film forming process (layer forming process), (b) an exposure process, (c) a development process, and (d) a heating process and a post-development exposure process again on the surface of the pattern (resin layer) or the metal layer in this order. However, at least one of (a) the film forming process and (d) the heating process and the post-development exposure process may be repeated. Furthermore, at least one of (d) the heating process and the post-development exposure process may be followed by (e) a metal layer forming process. It goes without saying that the lamination process may further include the above-mentioned drying process, etc. as appropriate.

[0121] When a further lamination step is performed after the lamination step, a surface activation treatment step may be further performed after the exposure step, the heating step, or the metal layer forming step. An example of the surface activation treatment is a plasma treatment. Details of the surface activation treatment will be described later.

[0122] The lamination step is preferably performed 2 to 20 times, more preferably 2 to 9 times. For example, a structure having 2 to 20 resin layers, such as resin layer / metal layer / resin layer / metal layer / resin layer / metal layer, is preferred, and a structure having 2 to 9 resin layers is even more preferred. Each of the layers may be the same or different in composition, shape, film thickness, etc.

[0123] In the rewiring layer A forming step, it is particularly preferable to form a cured product (resin layer) of the composition so as to cover the metal layer after providing the metal layer.Specifically, it is preferable to repeat the following steps in the order of (a) film forming step, (b) exposure step, (c) development step, (d) at least one of heating step and post-development exposure step, and (e) metal layer forming step, or to repeat the following steps in the order of (a) film forming step, (d) at least one of heating step and post-development exposure step, and (e) metal layer forming step.By alternately performing the lamination step of laminating the composition layer (resin layer) and the metal layer forming step, it is possible to alternately laminate the composition layer (resin layer) and the metal layer.

[0124] <Surface Activation Treatment Step> The rewiring layer A formation step preferably includes a surface activation treatment step in which at least a portion of the metal layer and the composition layer are surface-activated. The surface activation treatment step is usually performed after the metal layer formation step. However, after the development step (preferably after at least one of the heating step and the post-development exposure step), the composition layer may be surface-activated before the metal layer formation step. The surface activation treatment may be performed only on at least a portion of the metal layer, or only on at least a portion of the composition layer after exposure, or may be performed on at least a portion of both the metal layer and the composition layer after exposure. The surface activation treatment is preferably performed on at least a portion of the metal layer, and it is preferable to perform the surface activation treatment on part or all of the region of the metal layer on which the composition layer is to be formed. In this way, by performing the surface activation treatment on the surface of the metal layer, adhesion with the composition layer (film) formed on the surface can be improved. The surface activation treatment is also preferably performed on part or all of the composition layer (resin layer) after exposure. In this way, by performing the surface activation treatment on the surface of the composition layer, adhesion with the metal layer or resin layer formed on the surface that has been surface-activated can be improved. In particular, when negative development is performed, when the composition layer is cured, it is less susceptible to damage caused by the surface treatment and adhesion is likely to be improved. The surface activation treatment can be carried out, for example, by the method described in paragraph 0415 of International Publication No. 2021 / 112189. The contents of this document are incorporated herein by reference.

[0125] <Connection Pad Forming Step> The rewiring layer A forming step may further include a connection pad forming step after the lamination step. Preferred embodiments of the connection pads to be formed are as described above. The connection pad forming step can be performed using any method known in the art without particular limitation. For example, a method may be used in which a resist layer is formed as needed, followed by forming a connection pad by plating or the like, and then peeling off the resist layer.

[0126] <Carrier Wafer Bonding Step, Carrier Wafer Peeling Step> The semiconductor package manufacturing method of the present invention can include a carrier wafer bonding step of bonding a carrier wafer to a semiconductor package being manufactured, and a carrier wafer peeling step of peeling off the bonded carrier wafer. For example, if a carrier wafer is bonded to a semiconductor die in the encapsulation layer forming step to form an encapsulation layer on the carrier wafer, and a rewiring layer A is formed on the encapsulation layer in the rewiring layer A forming step, the carrier wafer can be peeled off from the encapsulation layer to bond another semiconductor die, and a new carrier wafer can be bonded to the surface of the rewiring layer A as needed, thereby inverting the side on which the carrier wafer is located. The carrier wafer peeling step and the carrier wafer bonding step can be performed by known methods. Furthermore, known carrier wafers can be used without any particular limitations.

[0127] <Conductive Portion Forming Step> The semiconductor die manufacturing method of the present invention may further include a conductive portion forming step of forming the conductive portion described above. The conductive portion forming step may be performed, for example, between the encapsulating layer forming step and the rewiring layer A forming step, or may be performed after the rewiring layer A forming step. The conductive portion forming step is performed, for example, by forming holes in the encapsulating layer using a laser or the like and filling the holes with a conductor using plating or the like. The holes may be through holes or blind holes. In addition, in forming the holes, residues of the encapsulating layer and the like generated during processing may be removed by a known desmearing process or the like. As the method for the conductive portion forming step, any method known in the art may be used without particular limitation.

[0128] <Inspection Step> After the redistribution layer A formation step, an inspection step may be further included to inspect the surface condition, conductivity, insulation, presence or absence of voids, etc. of the formed redistribution layer A. As the method of the inspection step, any method known in the art can be used without particular limitation.

[0129] <Connection Forming Step> The method for manufacturing a semiconductor package of the present invention further includes a connection forming step of forming a conductive connection on a surface of the rewiring layer A different from the surface that contacts the sealing layer. Preferred aspects of the conductive connection are the same as the preferred aspects of the conductive connection of the semiconductor package of the present invention. As a method for forming the conductive connection, any method known in the art can be used without particular limitation.

[0130] <Step of Bonding Another Semiconductor Die> The method for manufacturing a semiconductor package of the present invention may further include a step of bonding another semiconductor die to a surface of the rewiring layer A other than the surface in contact with the encapsulation layer. The other semiconductor die is preferably connected to the rewiring layer A via the above-mentioned conductive portion formed in the encapsulation layer. Preferred aspects of the other semiconductor die are the same as those of the other semiconductor die in the semiconductor package of the present invention. When bonding the other semiconductor die, at least one of heating and pressure may be applied. As a method for bonding the other semiconductor die, any method known in the art can be used without particular limitation.

[0131] <Substrate Bonding Step> The method for manufacturing a semiconductor package of the present invention includes a step of bonding the conductive connection portion and the substrate. The substrate is preferably connected to the redistribution layer A via the conductive connection portion. Preferred aspects of the substrate are the same as those of the substrate of the semiconductor die of the present invention. At least one of heating and pressure may be applied during bonding of the substrates. As a method for bonding the substrates, any method known in the art can be used without particular limitation.

[0132] <Other Steps> The semiconductor package manufacturing method of the present invention may further include other steps. Examples of such other steps include cleaning components as needed after each step, forming another rewiring layer on the opposite side of the encapsulating layer from the rewiring layer A, and forming another connection portion on the opposite side of the encapsulating layer from the rewiring layer A. The step of forming the other rewiring layer is not particularly limited and can be a known step for forming a rewiring layer. For example, the step can be performed in the same manner as the rewiring layer A formation step described above, except that the taper angle is not limited. The step of forming the other connection portion is not particularly limited and can be a known step for forming a connection portion. For example, the step can be performed in the same manner as the connection portion formation step described above.

[0133] 6A and 6B are schematic cross-sectional views showing an example of the method for manufacturing a semiconductor package of the present invention. In Fig. 6A, a layer 46 made of a curable resin composition is formed on a carrier wafer 62, and two semiconductor dies 28 are disposed on the layer 46 made of the curable resin composition. The details of the curable resin composition are as described above. Here, the layer 46 made of the curable resin composition may be cured or may not be cured.

[0134] 6(b) shows a state in which a semiconductor die 28 is embedded in an encapsulant 30 in the stack shown in FIG. 6(a). The surface of the semiconductor die 28 is exposed. The encapsulant 30 is formed, for example, by applying the curable resin composition described above so as to embed the semiconductor die and then curing it. Here, the surface of the semiconductor die 28 may be exposed by a polishing process, or the encapsulant 30 may be filled in so as to be exposed.

[0135] 6(c) is a schematic cross-sectional view of the laminate shown in FIG. 6(b) after a layer including an insulating pattern A12 and a conductive pattern A14 has been formed. For example, the insulating pattern A12 is first formed by the above-described film formation step, exposure step, development step, and heating step, and then the conductive pattern A14 is formed by the above-described metal layer formation step, thereby obtaining the laminate shown in FIG. 6(c). Here, the insulating pattern A12 includes a via structure, and the conductive pattern A14 is included as a via pattern. In the present invention, the taper angle of the via structure of the insulating pattern A12 can be adjusted to 70 to 110° by appropriately setting the composition of the negative photosensitive resin composition used to form the insulating pattern A12, the exposure illuminance and exposure dose in the exposure step, the numerical aperture of the stepper, the development conditions in the development step, the developer, and the like.

[0136] Fig. 6(d) is a schematic cross-sectional view of the laminate shown in Fig. 6(c) after another layer including an insulating pattern A12 and a conductive pattern A14 has been formed. For example, the insulating pattern A12 is formed on the laminate shown in Fig. 6(c) by the above-described film formation step, exposure step, development step, and heating step, and then the conductive pattern A14 is formed by the above-described metal layer formation step, thereby obtaining the laminate shown in Fig. 6(d). Here, the newly formed conductive pattern A14 in Fig. 6(d) can be, for example, a pattern including a line and space pattern.

[0137] Fig. 6(e) is a schematic cross-sectional view of the laminate shown in Fig. 6(d) after forming another layer including an insulating pattern A12 and a conductive pattern A14 and then forming a conductive pad 16. In this manner, the insulating pattern A12 and the conductive pattern A14 are laminated, and the conductive pad 16 is formed as needed, thereby forming the rewiring layer A. Thereafter, the laminate shown in Fig. 6(e) is subjected to a connection portion forming process and a substrate bonding process, and the carrier wafer 62 is peeled off to obtain the semiconductor package shown in Fig. 4.

[0138] 7A and 7B are schematic cross-sectional views showing an example of a method for manufacturing a semiconductor package according to the present invention. In Fig. 7A, an encapsulation layer including a semiconductor die 28 embedded in an encapsulant 30 is formed on a carrier wafer 62, and a rewiring layer A including an insulating pattern A12, a conductive pattern A14, and conductive pads 16 is formed on the surface of the encapsulation layer where the semiconductor die 28 is exposed. The laminate shown in Fig. 7A can be obtained by a method similar to that for manufacturing the laminate shown in Fig. 6 described above.

[0139] 7(b) is a schematic cross-sectional view of the laminate shown in Fig. 7(a) in a state in which a conductive through via 36, ​​an insulating layer 44, and another conductive pad 40 have been formed. The laminate shown in Fig. 7(b) is obtained by adhering a second carrier wafer 64 to the surface of the rewiring layer A opposite the sealing layer, peeling off the carrier wafer 62, forming an insulating layer 44 on the surface of the sealing layer opposite the surface on which the rewiring layer A has been formed, and then forming the conductive through via 36 and another conductive pad 40 by a conductive portion forming step.

[0140] 7(c) is a schematic cross-sectional view of the stack shown in FIG. 7(b) after forming another conductive pad 40 and bonding another semiconductor die 38. Thereafter, the second carrier wafer 64 is peeled off from the stack shown in FIG. 7(c), a third carrier wafer is bonded to the other semiconductor die 38 as needed, a connection forming step and a substrate bonding step are performed on the rewiring layer A, and the third carrier wafer is peeled off as needed, thereby obtaining the semiconductor package shown in FIG.

[0141] Hereinafter, the negative photosensitive resin composition (composition) will be described in detail.

[0142] The composition may be any known composition used in forming an insulating pattern, without any particular limitation. However, it is preferable that the composition contains at least one resin selected from the group consisting of heterocycle-containing polymers and their precursors (hereinafter also referred to as "specific resin"), and more preferable that the composition contains polyimide or a polyimide precursor. The imidization rate of the polyimide precursor is preferably less than 50%. The imidization rate of the polyimide is preferably 50% or more. Details of the imidization rate will be described later.

[0143] <Specific Resin> The heterocycle-containing polymer is preferably a resin containing an imide ring structure or an oxazole ring structure in its main chain structure. In the present invention, the term "main chain" refers to the relatively longest bonded chain in the resin molecule, and the term "side chain" refers to any other bonded chain. Examples of heterocycle-containing polymers include polyimide, polybenzoxazole, and polyamideimide. A precursor of a heterocycle-containing polymer refers to a resin whose chemical structure changes upon external stimulation to become a heterocycle-containing polymer. A resin whose chemical structure changes upon heating to become a heterocycle-containing polymer is preferred, and a resin whose ring structure is formed by a ring-closing reaction upon heating to become a heterocycle-containing polymer is more preferred. Examples of precursors of heterocycle-containing polymers include polyimide precursors, polybenzoxazole precursors, and polyamideimide precursors. That is, the composition preferably contains, as the specific resin, at least one resin selected from the group consisting of polyimide, polyimide precursor, polybenzoxazole, polybenzoxazole precursor, polyamideimide, and polyamideimide precursor. The composition preferably contains, as the specific resin, polyimide or a polyimide precursor.

[0144] The specific resin preferably has a polymerizable group, more preferably a radically polymerizable group. When the specific resin has a radically polymerizable group, the composition preferably contains a radical polymerization initiator, more preferably both a radical polymerization initiator and a radical crosslinking agent. If necessary, a sensitizer may also be included. From such a composition, for example, a negative-tone photosensitive film is formed. Examples of the polymerizable group include a group having an ethylenically unsaturated bond, an epoxy group, an oxetanyl group, a benzoxazolyl group, etc., with a group having an ethylenically unsaturated bond being preferred. Examples of the group having an ethylenically unsaturated bond include a vinyl group, an allyl group, a vinylphenyl group, a (meth)acryloyl group, a maleimide group, a (meth)acrylamide group, etc. Among these, a (meth)acryloxy group, a (meth)acrylamide group, a vinylphenyl group, or a maleimide group is preferred, with a (meth)acryloyl group being more preferred from the viewpoint of reactivity. Furthermore, a vinylphenyl group or a maleimide group is preferred from the viewpoint of reducing the dielectric loss tangent, etc. The specific resin may also have a polarity conversion group such as an acid-decomposable group. When the specific resin has an acid-decomposable group, the composition preferably contains a photoacid generator. From such a composition, for example, a chemically amplified positive-type photosensitive film or negative-type photosensitive film is formed.

[0145] The specific resin is preferably a resin having at least one repeating unit selected from the group consisting of repeating units represented by formula (4-1) and repeating units represented by formula (4-2). In formula (4-1), X １ is a tetravalent organic group, and Y １ is a divalent organic group, and R １ and R ２ are each independently a hydrogen atom or a monovalent organic group. In formula (4-2), X １ represents an organic group having 4 or more carbon atoms, and Y １ represents an organic group having 4 or more carbon atoms, and R １ each independently represents a structure containing a polymerizable group; n and m each independently represent an integer of 0 to 4;

[0146] -X１ -X １ The number of carbon atoms in X is 4 or more, preferably 4 to 50, and more preferably 4 to 40. １ Preferably, X represents an organic group containing a structure in which two or more hydrogen atoms have been removed from a structure represented by any one of the following formulas (V-1) to (V-4): １ is an organic group containing a structure in which two or more hydrogen atoms have been removed from a structure represented by any one of formulas (V-1) to (V-4), the chemical resistance and flatness of the cured product are improved. １ is an organic group containing a structure in which two or more hydrogen atoms have been removed from a structure represented by any one of formulas (V-1) to (V-4), it is possible to obtain effects such as suppressing the generation of development residues, lowering the dielectric constant of the cured product, and reducing the thermal expansion coefficient. In formula (V-2), R Ｘ１ are each independently a hydrogen atom, an alkyl group, or a halogenated alkyl group. Ｘ２ and R Ｘ３ each independently represents a hydrogen atom or a substituent, R Ｘ２ and R Ｘ３ may be bonded to form a ring structure.

[0147] In formula (V-2), R Ｘ１ are each independently preferably an alkyl group or a halogenated alkyl group, more preferably an alkyl group having 1 to 4 carbon atoms or a halogenated alkyl group having 1 to 4 carbon atoms, and even more preferably a methyl group or a trifluoromethyl group. A halogenated alkyl group refers to a group in which at least one hydrogen atom of an alkyl group has been substituted with a halogen atom. The halogen atom is preferably F or Cl, and more preferably F. In formula (V-3), R Ｘ２ and R Ｘ３ are each preferably independently a hydrogen atom. Ｘ２ and R Ｘ３ When R Ｘ２ and R Ｘ３ The structure formed by bonding is a single bond, —O— or —C(R) ２ - is preferred, and -O- or -C(R) ２R represents a hydrogen atom or a monovalent organic group, preferably a hydrogen atom, an alkyl group, or an aryl group, more preferably a hydrogen atom.

[0148] X １ is a group containing a structure in which two or more hydrogen atoms have been removed from the structure represented by formula (V-1), X １ is preferably a group represented by the following formula (V-1-1): In the following formula, * represents X in formula (4-1). １ represents bonding sites with the four carbonyl groups to which n1 is bonded, and n1 represents an integer of 0 to 5, and is also preferably an integer of 1 to 5. Furthermore, the hydrogen atoms in the following structures may be further substituted with known substituents such as hydrocarbon groups.

[0149] X １ is a group containing a structure in which two or more hydrogen atoms have been removed from the structure represented by formula (V-2), X １ is preferably a group represented by the following formula (V-2-1) or formula (V-2-2), and from the viewpoint of lowering the amine value in the resin, it is preferably a group represented by formula (V-2-2). In this specification, a bond crossing a side of a ring structure means that it substitutes one of the hydrogen atoms in the ring structure. In the following formula, L Ｘ１ represents a single bond or —O—, and * represents X in formula (4-1). １ represents the bonding site with the four carbonyl groups to which R is bonded. Ｘ１ The definitions and preferred embodiments of are as described above. In addition, the hydrogen atoms in these structures may be further substituted with known substituents such as hydrocarbon groups.

[0150] X １ is a group containing a structure in which two or more hydrogen atoms have been removed from the structure represented by formula (V-3), X １ is preferably a group represented by the following formula (V-3-1) or formula (V-3-2), and from the viewpoint of reducing the dielectric constant of the cured product, is preferably a group represented by formula (V-3-2). In the following formulas, * represents X in formula (4-1). １represents the bonding site with the four carbonyl groups to which R is bonded. Ｘ２ and R Ｘ３ The definitions and preferred embodiments of are as described above. In addition, the hydrogen atoms in these structures may be further substituted with known substituents such as hydrocarbon groups.

[0151] X １ is a group containing a structure in which two or more hydrogen atoms have been removed from the structure represented by formula (V-4), X １ is preferably a group represented by the following formula (V-4-1): １ represents the bonding sites with the four carbonyl groups to which n is bonded, and n1 represents an integer of 0 to 5. In addition, the hydrogen atoms in the following structures may be further substituted with known substituents such as hydrocarbon groups. However, it is also preferred that none of the hydrogen atoms in the structure represented by (V-4-1) are substituted.

[0152] Other, X １ may be a tetracarboxylic acid residue remaining after removal of the anhydride group from a tetracarboxylic acid dianhydride described in paragraphs 0055 to 0057 of JP-A No. 2023-003421.

[0153] Also, X １ It is preferable that X does not contain an imide bond in the structure. １ In the present invention, the urethane bond is *—O—C(═O)—NR Ｎ - is a bond represented by *, and R Ｎ represents a hydrogen atom or a monovalent organic group, and * represents a bonding site with a carbon atom. Ｎ is preferably a hydrogen atom or a hydrocarbon group, more preferably a hydrogen atom or an alkyl group, and even more preferably a hydrogen atom. Ｎ —C(═O)—NR Ｎ - is a bond represented by *, and R Ｎ R each independently represents a hydrogen atom or a monovalent organic group, and * represents a bonding site with a carbon atom. ＮThe preferred embodiments of X are as described above. １ It is preferable that X does not contain an ester bond in its structure. In the present invention, the ester bond is a bond represented by *--O--C(=O)--*. Among these, X １ It is preferable that the copolymer does not contain an imide bond, a urethane bond, a urea bond, or an amide bond, and it is more preferable that the copolymer does not contain an imide bond, a urethane bond, a urea bond, an amide bond, or an ester bond.

[0154] Also, X １ is a structure represented by the following formula (X-2), or X in the structure represented by (X-2): ２ or a hydrogen atom of a group represented by ３ is a hydrogen atom of a group represented by R １ It may also have a structure substituted with a group represented by the following formula: In formula (X-2), X ２ each independently represents a trivalent linking group; L ３ represents a divalent linking group, and * represents a bonding site to another structure.

[0155] In formula (X-2), X ２ is exemplified by a linear or branched aliphatic group, a cyclic aliphatic group, and an aromatic group, or a group in which two or more of these are linked by a single bond or a linking group, and is preferably a linear aliphatic group having 2 to 20 carbon atoms, a branched aliphatic group having 3 to 20 carbon atoms, a cyclic aliphatic group having 3 to 20 carbon atoms, an aromatic group having 6 to 20 carbon atoms, or a group in which two or more of these are combined by a single bond or a linking group, and more preferably an aromatic group having 6 to 20 carbon atoms, or a group in which two or more aromatic groups having 6 to 20 carbon atoms are combined by a single bond or a linking group. Examples of the linking group include -O-, -S-, -C(=O)-, -S(=O) ２Preferred are -, an alkylene group, a halogenated alkylene group, an arylene group, or a linking group formed by bonding two or more of these, and more preferred are -O-, -S-, an alkylene group, a halogenated alkylene group, an arylene group, or a linking group formed by bonding two or more of these. The alkylene group is preferably an alkylene group having 1 to 20 carbon atoms, more preferably an alkylene group having 1 to 10 carbon atoms, and even more preferably an alkylene group having 1 to 4 carbon atoms. The halogenated alkylene group is preferably a halogenated alkylene group having 1 to 20 carbon atoms, more preferably a halogenated alkylene group having 1 to 10 carbon atoms, and even more preferably a halogenated alkylene group having 1 to 4 carbon atoms. Furthermore, examples of the halogen atom in the halogenated alkylene group include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom, with a fluorine atom being preferred. The halogenated alkylene group may contain hydrogen atoms or may have all of the hydrogen atoms substituted with halogen atoms, but it is preferable that all of the hydrogen atoms be substituted with halogen atoms. Examples of preferred halogenated alkylene groups include a (ditrifluoromethyl)methylene group. The arylene group is preferably a phenylene group or a naphthylene group, more preferably a phenylene group, and even more preferably a 1,3-phenylene group or a 1,4-phenylene group.

[0156] Also, X ２ is preferably derived from a tricarboxylic acid compound in which at least one carboxy group may be halogenated. The halogenation is preferably chlorination. In the present invention, a compound having three carboxy groups is referred to as a tricarboxylic acid compound. Two of the three carboxy groups in the tricarboxylic acid compound may be converted to acid anhydrides. Examples of tricarboxylic acid compounds that may be halogenated include branched aliphatic, cyclic aliphatic, and aromatic tricarboxylic acid compounds. These tricarboxylic acid compounds may be used alone or in combination of two or more.

[0157] X ２ It is preferable that X does not contain an imide structure in its structure. ２It is preferable that X does not contain a urethane bond, a urea bond, or an amide bond in the structure. ２ It is preferable that X does not contain an ester bond in the structure. ２ It is preferable that the copolymer does not contain an imide structure, a urethane bond, a urea bond, or an amide bond, and it is more preferable that the copolymer does not contain an imide structure, a urethane bond, a urea bond, an amide bond, or an ester bond.

[0158] Specifically, the tricarboxylic acid compound is preferably a tricarboxylic acid compound containing a linear aliphatic group having 2 to 20 carbon atoms, a branched aliphatic group having 3 to 20 carbon atoms, a cyclic aliphatic group having 3 to 20 carbon atoms, an aromatic group having 6 to 20 carbon atoms, or a group in which two or more of these are combined via a single bond or a linking group, and more preferably a tricarboxylic acid compound containing an aromatic group having 6 to 20 carbon atoms, or a group in which two or more aromatic groups having 6 to 20 carbon atoms are combined via a single bond or a linking group.

[0159] Specific examples of tricarboxylic acid compounds include 1,2,3-propanetricarboxylic acid, 1,3,5-pentanetricarboxylic acid, citric acid, trimellitic acid, 2,3,6-naphthalenetricarboxylic acid, and compounds in which phthalic acid (or phthalic anhydride) and benzoic acid are bonded with a single bond, —O—, —CH ２ -, -C(CH ３ ) ２ -, -C(CF ３ ) ２ -, -SO ２ These compounds may be compounds in which two carboxy groups are anhydride (e.g., trimellitic anhydride), or compounds in which at least one carboxy group is halogenated (e.g., trimellitic anhydride chloride).

[0160] In formula (X-2), L ３is exemplified by a linear or branched aliphatic group, a cyclic aliphatic group, an aromatic group, or a group in which two or more of these are linked by a single bond or a linking group, and is preferably a linear aliphatic group having 2 to 20 carbon atoms, a branched aliphatic group having 3 to 20 carbon atoms, a cyclic aliphatic group having 3 to 20 carbon atoms, an aromatic group having 6 to 20 carbon atoms, or a group in which two or more of these are combined by a single bond or a linking group, and more preferably an aromatic group having 6 to 20 carbon atoms, or a group in which two or more aromatic groups having 6 to 20 carbon atoms are combined by a single bond or a linking group. Examples of the linking group include -O-, -S-, -C(=O)-, -S(=O) ２ Preferred are -, an alkylene group, a halogenated alkylene group, an arylene group, or a linking group formed by bonding two or more of these, and more preferred are -O-, -S-, an alkylene group, a halogenated alkylene group, an arylene group, or a linking group formed by bonding two or more of these. The alkylene group is preferably an alkylene group having 1 to 20 carbon atoms, more preferably an alkylene group having 1 to 10 carbon atoms, and even more preferably an alkylene group having 1 to 4 carbon atoms. The halogenated alkylene group is preferably a halogenated alkylene group having 1 to 20 carbon atoms, more preferably a halogenated alkylene group having 1 to 10 carbon atoms, and even more preferably a halogenated alkylene group having 1 to 4 carbon atoms. Furthermore, examples of the halogen atom in the halogenated alkylene group include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom, with a fluorine atom being preferred. The halogenated alkylene group may contain hydrogen atoms or may have all of the hydrogen atoms substituted with halogen atoms, but it is preferable that all of the hydrogen atoms be substituted with halogen atoms. Examples of preferred halogenated alkylene groups include a (ditrifluoromethyl)methylene group. The arylene group is preferably a phenylene group or a naphthylene group, more preferably a phenylene group, and even more preferably a 1,3-phenylene group or a 1,4-phenylene group.

[0161] Also, X １ is a structure represented by the following formula (X-3), or X in the structure represented by (X-3): ２ or a hydrogen atom of a group represented by ３ is a hydrogen atom of a group represented by R １It may also have a structure substituted with a group represented by the following formula: In formula (X-3), X ２ each independently represents a trivalent linking group; L ３ represents a divalent linking group, and * represents a bonding site with another structure. ２ and L ３ A preferred embodiment of the formula (X-2) is ２ and L ３ This is the same as the preferred embodiment of the above.

[0162] -Y １ - Y １ The number of carbon atoms in Y is 4 or more, preferably 4 to 50, and more preferably 4 to 40. １ may be a group containing a structure in which two or more hydrogen atoms have been removed from a structure represented by any one of the above formulas (V-1) to (V-4). １ is an organic group containing a structure in which two or more hydrogen atoms have been removed from a structure represented by any one of formulas (V-1) to (V-4), the chemical resistance and flatness of the cured product are improved.

[0163] Y １ is a group containing a structure in which two or more hydrogen atoms have been removed from the structure represented by formula (V-1), Y １ is preferably a group represented by the following formula (V-1-2): In the following formula, * represents Y in formula (4-1). １ represents the bonding site to the two nitrogen atoms to which n is bonded, and n1 represents an integer of 1 to 5. Furthermore, the hydrogen atoms in the following structures may be further substituted with known substituents such as hydrocarbon groups.

[0164] Y １ is a group containing a structure in which two or more hydrogen atoms have been removed from the structure represented by formula (V-2), １ is preferably a group represented by the following formula (V-2-3) or formula (V-2-4), and from the viewpoint of reducing the dielectric constant of the cured product, it is preferably a group represented by formula (V-2-4). Ｘ１ represents a single bond or —O—, and * represents Y in formula (4-1). １represents the bonding site with the two nitrogen atoms to which R is bonded. Ｘ１ The preferred embodiments of are as described above. In addition, the hydrogen atoms in these structures may be further substituted with known substituents such as hydrocarbon groups.

[0165] Y １ is a group containing a structure in which two or more hydrogen atoms have been removed from the structure represented by formula (V-3), １ is preferably a group represented by the following formula (V-3-3) or formula (V-3-4), and from the viewpoint of reducing the dielectric constant of the cured product, it is preferably a group represented by formula (V-3-3). In the following formulas, * represents Y in formula (4-1). １ represents the bonding site with the two nitrogen atoms to which the hydrogen atoms are bonded. In addition, the hydrogen atoms in these structures may be further substituted with known substituents such as hydrocarbon groups.

[0166] Y １ is a group containing a structure in which two or more hydrogen atoms have been removed from the structure represented by formula (V-4), １ is preferably a group represented by the following formula (V-4-2) or (V-4-3): １ represents the bonding site to the two nitrogen atoms to which n is bonded, and n1 represents an integer of 0 to 5. An embodiment in which n1 is 0 is also one of the preferred embodiments of the present invention. Furthermore, the hydrogen atoms in the following structures may be further substituted with known substituents such as hydrocarbon groups.

[0167] Others, Y １ may be a group described in paragraphs 0042 to 0053 of JP-A No. 2023-003421. １ It is preferable that Y does not contain an imide bond in the structure. １ It is preferable that Y does not contain a urethane bond, a urea bond, or an amide bond in the structure. １ It is preferable that Y does not contain an ester bond in the structure. １It is preferable that the copolymer does not contain an imide bond, a urethane bond, a urea bond, or an amide bond, and it is more preferable that the copolymer does not contain an imide bond, a urethane bond, a urea bond, an amide bond, or an ester bond.

[0168] Among these, X in formula (4-1) １ and Y １ is preferably an organic group containing a structure in which two or more hydrogen atoms have been removed from a structure represented by any one of the above formulas (V-1) to (V-4). Preferred aspects of these groups are as described above.

[0169] R in formula (4-1) １ and R ２ each independently represents a hydrogen atom or a monovalent organic group. The monovalent organic group preferably contains a linear or branched alkyl group, a cyclic alkyl group, an aromatic group, or a polyalkyleneoxy group. １ and R ２ Preferably, at least one of R contains a polymerizable group, and more preferably, both of R １ and R ２ It is also preferable that at least one of the groups contains two or more polymerizable groups. The polymerizable group is a group capable of undergoing a crosslinking reaction by the action of heat, radicals, or the like, and a radically polymerizable group is preferred. Specific examples of the polymerizable group include a group having an ethylenically unsaturated bond, an alkoxymethyl group, a hydroxymethyl group, an acyloxymethyl group, an epoxy group, an oxetanyl group, a benzoxazolyl group, a blocked isocyanate group, and an amino group. The radically polymerizable group possessed by the polyimide precursor is preferably a group having an ethylenically unsaturated bond. Examples of the group having an ethylenically unsaturated bond include a vinyl group, an allyl group, an isoallyl group, a 2-methylallyl group, a group having an aromatic ring directly bonded to a vinyl group (e.g., a vinylphenyl group), a (meth)acrylamide group, a (meth)acryloyloxy group, and a group represented by the following formula (III), with a group represented by the following formula (III) being preferred.

[0170]

[0171] In formula (III), R ２００represents a hydrogen atom, a methyl group, an ethyl group, or a methylol group, and is preferably a hydrogen atom or a methyl group. In formula (III), * represents a bonding site with another structure. In formula (III), R ２０１ represents an alkylene group having 2 to 12 carbon atoms, —CH ２ CH(OH)CH ２ -, a cycloalkylene group or a polyalkyleneoxy group. ２０１ Examples of the alkylene group include an ethylene group, a propylene group, a trimethylene group, a tetramethylene group, a pentamethylene group, a hexamethylene group, an octamethylene group, and a dodecamethylene group; a 1,2-butanediyl group, a 1,3-butanediyl group; a —CH ２ CH(OH)CH ２ alkylene groups such as ethylene and propylene; ２ CH(OH)CH ２More preferred are alkylene groups such as ethylene and propylene, or polyalkyleneoxy groups. In the present invention, a polyalkyleneoxy group refers to a group in which two or more alkyleneoxy groups are directly bonded. The alkylene groups in the multiple alkyleneoxy groups contained in the polyalkyleneoxy group may be the same or different. When a polyalkyleneoxy group contains multiple alkyleneoxy groups with different alkylene groups, the arrangement of the alkyleneoxy groups in the polyalkyleneoxy group may be a random arrangement, a block arrangement, or an arrangement having an alternating pattern. The number of carbon atoms in the alkylene group (including the number of carbon atoms in the substituent if the alkylene group has a substituent) is preferably 2 or more, more preferably 2 to 10, even more preferably 2 to 6, even more preferably 2 to 5, even more preferably 2 to 4, even more preferably 2 or 3, and particularly preferably 2. The alkylene group may also have a substituent. Preferred substituents include alkyl groups, aryl groups, and halogen atoms. The number of alkyleneoxy groups contained in the polyalkyleneoxy group (the number of repeating polyalkyleneoxy groups) is preferably 2 to 20, more preferably 2 to 10, and even more preferably 2 to 6. From the viewpoint of solvent solubility and solvent resistance, the polyalkyleneoxy group is preferably a polyethyleneoxy group, a polypropyleneoxy group, a polytrimethyleneoxy group, a polytetramethyleneoxy group, or a group in which multiple ethyleneoxy groups and multiple propyleneoxy groups are bonded, more preferably a polyethyleneoxy group or a polypropyleneoxy group, and even more preferably a polyethyleneoxy group. In the group in which multiple ethyleneoxy groups and multiple propyleneoxy groups are bonded, the ethyleneoxy groups and propyleneoxy groups may be arranged randomly, in blocks, or in an alternating pattern. The preferred embodiments of the number of repeating ethyleneoxy groups and the like in these groups are as described above.

[0172] In formula (4-1), R １is a hydrogen atom, or R ２ When is a hydrogen atom, the polyimide precursor may form a counter salt with a tertiary amine compound having an ethylenically unsaturated bond. An example of such a tertiary amine compound having an ethylenically unsaturated bond is N,N-dimethylaminopropyl methacrylate.

[0173] In formula (4-1), R １ and R ２ At least one of the groups may be a polarity conversion group such as an acid-decomposable group. The acid-decomposable group is not particularly limited as long as it is decomposed by the action of an acid to generate an alkali-soluble group such as a phenolic hydroxy group or a carboxy group. Preferred examples include an acetal group, a ketal group, a silyl group, a silyl ether group, and a tertiary alkyl ester group. From the viewpoint of exposure sensitivity, an acetal group or a ketal group is more preferred. Specific examples of the acid-decomposable group include a tert-butoxycarbonyl group, an isopropoxycarbonyl group, a tetrahydropyranyl group, a tetrahydrofuranyl group, an ethoxyethyl group, a methoxyethyl group, an ethoxymethyl group, a trimethylsilyl group, a tert-butoxycarbonylmethyl group, and a trimethylsilyl ether group. From the viewpoint of exposure sensitivity, an ethoxyethyl group or a tetrahydrofuranyl group is preferred.

[0174] The polyimide precursor preferably contains fluorine atoms in its structure. The fluorine atom content in the polyimide precursor is preferably 10% by mass or more and 20% by mass or less.

[0175] Furthermore, for the purpose of improving adhesion to the substrate, the polyimide precursor may be copolymerized with an aliphatic group having a siloxane structure. Specific examples include embodiments using bis(3-aminopropyl)tetramethyldisiloxane, bis(p-aminophenyl)octamethylpentasiloxane, or the like as the diamine.

[0176] In formula (4-2), X １ and Y １ A preferred embodiment of the formula (4-1) is X １ and Y １ This is the same as the preferred embodiment of the above.

[0177] In formula (4-2), R １ In formula (4-2), the preferred embodiments of the polymerizable group are the same as the preferred embodiments of the polymerizable group contained in the resin. １ is preferably a group represented by formula (R-1). In formula (R-1), L １ represents a 1+1-valent linking group, A １ represents a polymerizable group, a1 represents an integer of 1 or more, * represents X in formula (1-1). １ or Y １ In formula (R-1), L １ is preferably a group represented by the following formula (L-2). In formula (L-2), Z ２ -O-, -NR Ｎ -, -C(=O)O- or -C(=O)NR Ｎ represents -, and R Ｎ represents a hydrogen atom or a monovalent organic group; when a1 is 1, L ｘ represents a single bond or a divalent linking group, and when a1 is 2 or more, L ｘ represents an a1+1-valent linking group, a1 represents an integer of 1 or more, * represents X in formula (1-1). １ or Y １ represents a bonding site with another structure in formula (R-1), and # represents a bonding site with another structure in formula (R-1). １ represents the binding site with

[0178] In formula (L-2), Z ２ is preferably —O— or —C(═O)O—. ２ Ga-NR Ｎ -, then R Ｎ is preferably a hydrogen atom or a hydrocarbon group, more preferably a hydrogen atom, an alkyl group or a phenyl group, and still more preferably a hydrogen atom. ｘ is preferably an alkylene group, more preferably an alkylene group having 1 to 10 carbon atoms, even more preferably an alkylene group having 1 to 4 carbon atoms, and particularly preferably a methylene group. ｘis preferably a hydrocarbon group, a heterocyclic group, or a group represented by a combination thereof, more preferably a saturated aliphatic hydrocarbon group having 2 to 20 carbon atoms, and even more preferably a saturated aliphatic hydrocarbon group having 3 to 15 carbon atoms. In formula (L-2), a1 has the same meaning as a1 in formula (R-1).

[0179] In formula (R-1), A １ represents a polymerizable group. Preferred embodiments of the polymerizable group are the same as the preferred embodiments of the polymerizable group contained in the resin described above. １ is preferably a (meth)acryloxy group, a maleimide group, or a vinylphenyl group, and more preferably a maleimide group or a vinylphenyl group from the viewpoint of reducing the dielectric loss tangent of the cured product, etc. Furthermore, a (meth)acryloxy group is more preferred from the viewpoint of reactivity, etc.

[0180] Among these, A in formula (R-1) １ is a vinylphenyl group, and L １ is preferably a group represented by formula (L-2-1). In formula (L-2-1), L Ｘ２ represents a hydrocarbon group, and a1 represents an integer of 1 or more. Ｘ２ is preferably an aliphatic saturated hydrocarbon group. Ｘ２ is preferably an alkylene group, more preferably an alkylene group having 1 to 10 carbon atoms, still more preferably an alkylene group having 1 to 4 carbon atoms, and particularly preferably a methylene group. In formula (L-2-1), a1 has the same meaning as a1 in formula (R-1).

[0181] In addition, A in formula (R-1) １ is a maleimide group, and L １ is a group represented by formula (L-2), and L Ｘis preferably an aromatic group or an aliphatic saturated hydrocarbon group having 4 or more carbon atoms. The aromatic group may be either an aromatic hydrocarbon group or an aromatic heterocyclic group, but is preferably an aromatic hydrocarbon group. The aromatic hydrocarbon group is preferably an aromatic hydrocarbon group having 6 to 10 carbon atoms, more preferably an aromatic hydrocarbon group having 6 carbon atoms. Examples of heteroatoms in the aromatic heterocyclic group include an oxygen atom, a nitrogen atom, and a sulfur atom. The number of heteroatoms in the aromatic heterocyclic group is preferably 1 or 2. Furthermore, the aromatic heterocyclic group is preferably a 5- or 6-membered ring containing the above heteroatom. Furthermore, the aromatic heterocyclic group may be condensed with another aromatic heterocyclic group or another aromatic hydrocarbon ring group. The aliphatic saturated hydrocarbon group having 4 or more carbon atoms may be linear, branched, cyclic, or have a structure represented by a combination thereof. The number of carbon atoms in the aliphatic saturated hydrocarbon group having 4 or more carbon atoms is preferably 4 to 20, more preferably 5 to 10.

[0182] In formula (R-1), a1 is preferably an integer of 1 to 4, and more preferably an integer of 1 or 2. An embodiment in which a1 is 1 is also one of the preferred embodiments of the present invention.

[0183] The number of ester bonds contained in formula (R-1) is preferably 1 or 0.

[0184] -n and m- In formula (4-2), m is preferably an integer of 0 to 2, and more preferably 0 or 1. An embodiment in which m is 0 is also one of the preferred embodiments of the present invention. In formula (4-2), n is preferably 1 or 2, and more preferably 2.

[0185] [Polyimide Precursor] The polyimide precursor used in the present invention is not particularly limited in type, but preferably contains the repeating unit represented by the above formula (4-1).

[0186] The polyimide precursor may contain one type of repeating unit represented by formula (4-1), or may contain two or more types. It may also contain a structural isomer of the repeating unit represented by formula (4-1). The polyimide precursor may also contain other types of repeating units in addition to the repeating unit of formula (4-1).

[0187] In one embodiment of the polyimide precursor of the present invention, the content of the repeating unit represented by formula (4-1) is 50 mol% or more of all repeating units. The total content is more preferably 70 mol% or more, even more preferably 90 mol% or more, and particularly preferably more than 90 mol%. The upper limit of the total content is not particularly limited, and all repeating units in the polyimide precursor except for the terminal repeating units may be repeating units represented by formula (4-1).

[0188] - Cyclization rate (imidization rate) - From the viewpoint of the film strength, insulating properties, etc. of the resulting organic film, the cyclization rate (imidization rate) of the polyimide precursor is preferably less than 50%, more preferably 40% or less, even more preferably 30% or less, and even more preferably 20% or less. The lower limit of the cyclization rate is not particularly limited, and may be 0%. The cyclization rate is measured, for example, by the following method. The infrared absorption spectrum of the polyimide precursor is measured, and the absorption peak at 1377 cm －１ Next, the polyimide precursor is heat-treated at 350° C. for 1 hour, and then the infrared absorption spectrum is measured again to determine the peak intensity P1 around 1377 cm －１ The peak intensity P2 around the peak intensity P1 is measured. The cyclization rate of the polyimide precursor can be calculated using the obtained peak intensities P1 and P2 according to the following formula: Cyclization rate (%) = (peak intensity P1 / peak intensity P2) x 100

[0189] The weight-average molecular weight (Mw) of the polyimide precursor is preferably 5,000 to 100,000, more preferably 10,000 to 50,000, and even more preferably 15,000 to 40,000. The number-average molecular weight (Mn) of the polyimide precursor is preferably 2,000 to 40,000, more preferably 3,000 to 30,000, and even more preferably 4,000 to 20,000. The molecular weight dispersity of the polyimide precursor is preferably 1.5 or more, more preferably 1.8 or more, and even more preferably 2.0 or more. The upper limit of the molecular weight dispersity of the polyimide precursor is not particularly specified, but is, for example, preferably 7.0 or less, more preferably 6.5 or less, and even more preferably 6.0 or less. In this specification, the molecular weight dispersity is a value calculated by dividing the weight-average molecular weight by the number-average molecular weight. When the composition contains multiple polyimide precursors as the specific resin, it is preferable that the weight-average molecular weight, number-average molecular weight, and dispersity of at least one polyimide precursor are within the above-mentioned ranges. It is also preferable that the weight-average molecular weight, number-average molecular weight, and dispersity calculated by treating the multiple polyimide precursors as a single resin are within the above-mentioned ranges.

[0190] [Polyimide] The polyimide used in the present invention may be an alkali-soluble polyimide, or may be a polyimide soluble in a developer containing an organic solvent as a main component. In this specification, alkali-soluble polyimide refers to a polyimide that dissolves at 0.1 g or more in 100 g of a 2.38 mass % aqueous tetramethylammonium solution at 23°C. From the viewpoint of pattern formability, a polyimide that dissolves at 0.5 g or more is preferred, and a polyimide that dissolves at 1.0 g or more is even more preferred. The upper limit of the solubility is not particularly limited, but is preferably 100 g or less. From the viewpoint of the film strength and insulating properties of the resulting organic film, the polyimide is preferably a polyimide having multiple imide structures in its main chain.

[0191] -Fluorine Atom- From the viewpoint of the film strength of the obtained organic film, it is also preferable that the polyimide contains a fluorine atom. The fluorine atom is, for example, R １３２or R in the repeating unit represented by formula (4-2) １３１ and R in the repeating unit represented by formula (4) is preferably included in １３２ or R in the repeating unit represented by formula (4-2) １３１ The amount of fluorine atoms relative to the total mass of the polyimide is preferably 5% by mass or more and 20% by mass or less.

[0192] Silicon Atoms—From the viewpoint of the film strength of the resulting organic film, it is also preferable that the polyimide contains silicon atoms. The silicon atoms are, for example, Y in the repeating unit represented by formula (4-2) described later. １ and Y in the repeating unit represented by formula (4-1) described below is preferably included. １ It is more preferable that the silicon atom or the organic modified (poly)siloxane structure described below is contained in the polyimide. The silicon atom or the organic modified (poly)siloxane structure may be contained in a side chain of the polyimide, but is preferably contained in the main chain of the polyimide. The amount of silicon atoms relative to the total mass of the polyimide is preferably 1 mass % or more and 20 mass % or less.

[0193] - Ethylenically unsaturated bond - From the viewpoint of the film strength of the obtained organic film, it is preferable that the polyimide has an ethylenically unsaturated bond. The polyimide may have the ethylenically unsaturated bond at the end of the main chain or in the side chain, but it is preferable that it has the ethylenically unsaturated bond in the side chain. The ethylenically unsaturated bond is preferably radically polymerizable. The ethylenically unsaturated bond is formed by the X in the repeating unit represented by formula (4-2). １ or Y １ and X １ or RY １ It is more preferable that the group having an ethylenically unsaturated bond is contained in the formula (I).

[0194] The amount of ethylenically unsaturated bonds relative to the total mass of the polyimide is preferably 0.0001 to 0.1 mol / g, and more preferably 0.0005 to 0.05 mol / g.

[0195] -Polymerizable group other than a group having an ethylenically unsaturated bond- The polyimide may have a polymerizable group other than a group having an ethylenically unsaturated bond. Examples of the polymerizable group other than a group having an ethylenically unsaturated bond include an epoxy group, a cyclic ether group such as an oxetanyl group, an alkoxymethyl group such as a methoxymethyl group, and a methylol group. Examples of the polymerizable group other than a group having an ethylenically unsaturated bond include R in the repeating unit represented by formula (4) below. １３１ The amount of polymerizable groups other than groups having an ethylenically unsaturated bond relative to the total mass of the polyimide is preferably 0.0001 to 0.1 mol / g, and more preferably 0.001 to 0.05 mol / g.

[0196] - Polarity conversion group - The polyimide may have a polarity conversion group such as an acid-decomposable group. The acid-decomposable group in the polyimide is R １ and R ２ The polarity conversion group is, for example, R in the repeating unit represented by formula (4-2) described later. １ , R ２ , contained in the terminals of polyimides, etc.

[0197] -Acid Value- When the polyimide is subjected to alkaline development, from the viewpoint of improving developability, the acid value of the polyimide is preferably 30 mgKOH / g or more, more preferably 50 mgKOH / g or more, and even more preferably 70 mgKOH / g or more. The acid value is preferably 500 mgKOH / g or less, more preferably 400 mgKOH / g or less, and even more preferably 200 mgKOH / g or less. When the polyimide is subjected to development using a developer containing an organic solvent as a main component (e.g., "solvent development"), the acid value of the polyimide is preferably 1 to 35 mgKOH / g, more preferably 2 to 30 mgKOH / g, and even more preferably 5 to 20 mgKOH / g. The acid value is measured by a known method, for example, by the method described in JIS K 0070:1992. From the viewpoint of achieving both storage stability and developability, the acid group contained in the polyimide preferably has a pKa of 0 to 10, more preferably 3 to 8. pKa refers to the equilibrium constant Ka of a dissociation reaction in which a hydrogen ion is released from an acid, expressed as its negative common logarithm, pKa. In this specification, pKa refers to a value calculated using ACD / ChemSketch (registered trademark) unless otherwise specified. For pKa, reference may be made to the value listed in the "Revised 5th Edition Chemistry Handbook: Basics" compiled by the Chemical Society of Japan. When the acid group is a polyvalent acid such as phosphoric acid, the pKa is the first dissociation constant. As such an acid group, the polyimide preferably contains at least one selected from the group consisting of a carboxy group and a phenolic hydroxy group, and more preferably a phenolic hydroxy group.

[0198] -Phenol Hydroxy Group- From the viewpoint of ensuring an appropriate development rate with an alkaline developer, the polyimide preferably has a phenolic hydroxy group. The polyimide may have the phenolic hydroxy group at the end of the main chain or on a side chain. The phenolic hydroxy group can be, for example, R in the repeating unit represented by formula (4-2). １３２ or R １３１The amount of phenolic hydroxy groups relative to the total mass of the polyimide is preferably 0.1 to 30 mol / g, and more preferably 1 to 20 mol / g.

[0199] The polyimide used in the present invention is not particularly limited as long as it is a polymer compound having an imide structure, but it is preferable that it contains a repeating unit represented by the above formula (4-2).

[0200] The polyimide preferably contains fluorine atoms in its structure, and the content of fluorine atoms in the polyimide is preferably 10% by mass or more, and more preferably 20% by mass or less.

[0201] To improve adhesion to the substrate, the polyimide may be copolymerized with an aliphatic group having a siloxane structure. Specific examples of the diamine component include bis(3-aminopropyl)tetramethyldisiloxane and bis(p-aminophenyl)octamethylpentasiloxane.

[0202] In order to improve the storage stability of the composition, it is preferable that the main chain terminals of the polyimide are blocked with a terminal blocking agent such as a monoamine, an acid anhydride, a monocarboxylic acid, a monoacid chloride compound, or a monoactive ester compound. Among these, it is more preferable to use a monoamine, and preferred monoamine compounds include aniline, 2-ethynylaniline, 3-ethynylaniline, 4-ethynylaniline, 5-amino-8-hydroxyquinoline, 1-hydroxy-7-aminonaphthalene, 1-hydroxy-6-aminonaphthalene, 1-hydroxy-5-aminonaphthalene, 1-hydroxy-4-aminonaphthalene, 2-hydroxy-7-aminonaphthalene, 2-hydroxy-6-aminonaphthalene, 2-hydroxy-5-aminonaphthalene, 1-carboxy-7-aminonaphthalene, 1-carboxy-6-aminonaphthalene, and 1-carboxy 2-5-aminonaphthalene, 2-carboxy-7-aminonaphthalene, 2-carboxy-6-aminonaphthalene, 2-carboxy-5-aminonaphthalene, 2-aminobenzoic acid, 3-aminobenzoic acid, 4-aminobenzoic acid, 4-aminosalicylic acid, 5-aminosalicylic acid, 6-aminosalicylic acid, 2-aminobenzenesulfonic acid, 3-aminobenzenesulfonic acid, 4-aminobenzenesulfonic acid, 3-amino-4,6-dihydroxypyrimidine, 2-aminophenol, 3-aminophenol, 4-aminophenol, 2-aminothiophenol, 3-aminothiophenol, 4-aminothiophenol, etc. Two or more of these may be used, and multiple different terminal groups may be introduced by reacting multiple terminal-capping agents.

[0203] -Imidization rate (ring closure rate)- The imidization rate of the polyimide (also referred to as "ring closure rate") is preferably 50% or more, more preferably 70% or more, and even more preferably 90% or more, from the viewpoint of the film strength, insulating properties, etc. of the resulting organic film. There is no particular upper limit to the imidization rate, and it is sufficient if it is 100% or less. The imidization rate is measured by the method described above.

[0204] Polyimide is a polymer in which all repeating units are R １ and R ２The repeating unit may contain the repeating unit represented by the above formula (4-2) in which the combination of R １ and R ２ The polyimide may contain a repeating unit represented by the formula (4-2) above, which contains two or more different combinations of repeating units. In addition to the repeating unit represented by the formula (4-2), the polyimide may contain other types of repeating units. Examples of other types of repeating units include the repeating unit represented by the formula (4-1) above.

[0205] Polyimides can be synthesized by, for example, reacting a tetracarboxylic dianhydride with a diamine (partially substituted with a monoamine end-capping agent) at low temperature, reacting a tetracarboxylic dianhydride with a diamine (partially substituted with an acid anhydride, monoacid chloride compound, or monoactive ester compound end-capping agent) at low temperature, preparing a diester from a tetracarboxylic dianhydride with an alcohol and then reacting it with a diamine (partially substituted with a monoamine end-capping agent) in the presence of a condensing agent, preparing a diester from a tetracarboxylic dianhydride with an alcohol and then converting the remaining dicarboxylic acid to an acid chloride and reacting it with a diamine (partially substituted with a monoamine end-capping agent), or by completely imidizing the resulting polyimide precursor using a known imidization reaction method, or by terminating the imidization reaction midway to introduce a partial imide structure, or by blending a fully imidized polymer with the polyimide precursor to introduce a partial imide structure. Other known polyimide synthesis methods can also be used.

[0206] The weight-average molecular weight (Mw) of the polyimide is preferably 5,000 to 100,000, more preferably 10,000 to 50,000, and even more preferably 15,000 to 40,000. By setting the weight-average molecular weight to 5,000 or more, the fold resistance of the cured film can be improved. In order to obtain an organic film with excellent mechanical properties (e.g., breaking elongation), the weight-average molecular weight is particularly preferably 15,000 or more. The number-average molecular weight (Mn) of the polyimide is preferably 2,000 to 40,000, more preferably 3,000 to 30,000, and even more preferably 4,000 to 20,000. The molecular weight dispersity of the polyimide is preferably 1.5 or more, more preferably 1.8 or more, and even more preferably 2.0 or more. The upper limit of the molecular weight dispersity of the polyimide is not particularly specified, but is, for example, preferably 7.0 or less, more preferably 6.5 or less, and even more preferably 6.0 or less. When the composition contains multiple types of polyimides as the specific resin, it is preferable that the weight average molecular weight, number average molecular weight, and dispersity of at least one type of polyimide are within the above ranges. It is also preferable that the weight average molecular weight, number average molecular weight, and dispersity calculated by treating the multiple types of polyimides as a single resin are each within the above ranges.

[0207] [Polybenzoxazole Precursor] Examples of the polybenzoxazole precursor include the compounds described in paragraphs 0073 to 0095 of WO 2022 / 145355. The above descriptions are incorporated herein by reference.

[0208] [Polybenzoxazole] Examples of polybenzoxazole include the compounds described in paragraphs 0101 to 0108 of WO 2022 / 145355. The above descriptions are incorporated herein by reference.

[0209] [Polyamideimide Precursor] Examples of the polyamideimide precursor include the compounds described in paragraphs 0104 to 0119 of WO 2022 / 145355. The above descriptions are incorporated herein by reference.

[0210] [Polyamideimide] Examples of polyamideimide include the compounds described in paragraphs 0125 to 0138 of WO 2022 / 145355, the disclosure of which is incorporated herein by reference.

[0211] [Method for Producing Polyimide Precursor, etc.] The polyimide precursor, etc., is produced, for example, by the method described in paragraphs 0134 to 0136 of WO 2022 / 145355. The above description is incorporated herein by reference.

[0212] [Content] The content of the specific resin in the composition is preferably 20% by mass or more, more preferably 30% by mass or more, even more preferably 40% by mass or more, and even more preferably 50% by mass or more, based on the total solid content of the composition. Furthermore, the content of the resin in the composition is preferably 99.5% by mass or less, more preferably 99% by mass or less, even more preferably 98% by mass or less, even more preferably 97% by mass or less, and even more preferably 95% by mass or less, based on the total solid content of the composition. The composition may contain only one type of specific resin, or may contain two or more types. When two or more types are contained, it is preferable that the total amount is within the above range.

[0213] It is also preferable that the composition contains at least two types of resins. Specifically, the composition may contain a total of two or more types of the specific resin and other resins described later, or may contain two or more types of specific resins, but it is preferable that the composition contains two or more types of specific resins. When the composition contains two or more types of specific resins, for example, a polyimide precursor having a structure derived from a dianhydride (X in the above formula (4-1) １ ) preferably contains two or more different polyimide precursors.

[0214] <Other Resins> The composition may contain the specific resin described above and another resin (hereinafter simply referred to as "other resin") different from the specific resin. Examples of other resins include phenolic resins, polyamides, epoxy resins, polysiloxanes, resins containing a siloxane structure, (meth)acrylic resins, (meth)acrylamide resins, urethane resins, butyral resins, styryl resins, polyether resins, and polyester resins. For example, by further adding a (meth)acrylic resin, a composition with excellent coatability can be obtained, and a pattern (cured product) with excellent solvent resistance can be obtained. For example, instead of or in addition to the polymerizable compound described below, a polymerizable compound having a high polymerizable group value and a weight average molecular weight of 20,000 or less (for example, a polymerizable group content of 1×10 per 1 g of resin) can be used. －３ By adding a (meth)acrylic resin (having a molecular weight of at least 100 mol / g) to the composition, it is possible to improve the coatability of the composition and the solvent resistance of the pattern (cured product).

[0215] When the composition contains other resins, the content of the other resins is preferably 0.01% by mass or more, more preferably 0.05% by mass or more, even more preferably 1% by mass or more, even more preferably 2% by mass or more, even more preferably 5% by mass or more, and even more preferably 10% by mass or more, based on the total solid content of the composition. When the composition contains other resins, the content of the other resins is preferably 80% by mass or less, more preferably 75% by mass or less, even more preferably 70% by mass or less, even more preferably 60% by mass or less, and even more preferably 50% by mass or less, based on the total solid content of the composition. A preferred embodiment of the composition may have a low content of the other resin. In the above embodiment, the content of the other resin is preferably 20% by mass or less, more preferably 15% by mass or less, even more preferably 10% by mass or less, even more preferably 5% by mass or less, and even more preferably 1% by mass or less, based on the total solid content of the composition. The lower limit of the content is not particularly limited, as long as it is 0% by mass or more. The composition may contain only one type of other resin, or may contain two or more types. When two or more types are contained, the total amount is preferably in the above range.

[0216] <Polymerizable Compound> The composition preferably contains a polymerizable compound. Examples of the polymerizable compound include a radical crosslinking agent and other crosslinking agents.

[0217] [Radical Crosslinking Agent] The composition preferably contains a radical crosslinking agent. The radical crosslinking agent is a compound having a radical polymerizable group. The radical polymerizable group is preferably a group containing an ethylenically unsaturated bond. Examples of the group containing an ethylenically unsaturated bond include a vinyl group, an allyl group, a vinylphenyl group, a (meth)acryloyl group, a maleimide group, and a (meth)acrylamide group. Among these, a (meth)acryloyl group, a (meth)acrylamide group, and a vinylphenyl group are preferred, and from the viewpoint of reactivity, a (meth)acryloyl group is more preferred.

[0218] The radical crosslinking agent is preferably a compound having one or more ethylenically unsaturated bonds, and more preferably contains a compound having two or more ethylenically unsaturated bonds. The radical crosslinking agent may have three or more ethylenically unsaturated bonds. The compound having two or more ethylenically unsaturated bonds is preferably a compound having 2 to 15 ethylenically unsaturated bonds, more preferably a compound having 2 to 10 ethylenically unsaturated bonds, and even more preferably a compound having 2 to 6 ethylenically unsaturated bonds. From the viewpoint of the film strength of the obtained pattern (cured product), it is also preferable that the composition contains a compound having two ethylenically unsaturated bonds and the compound having three or more ethylenically unsaturated bonds.

[0219] The molecular weight of the radical crosslinking agent is preferably 2,000 or less, more preferably 1,500 or less, and even more preferably 900 or less. The lower limit of the molecular weight of the radical crosslinking agent is preferably 100 or more.

[0220] Specific examples of radical crosslinking agents include unsaturated carboxylic acids (e.g., acrylic acid, methacrylic acid, itaconic acid, crotonic acid, isocrotonic acid, maleic acid, etc.), their esters, and amides. Preferred are esters of unsaturated carboxylic acids and polyhydric alcohol compounds, and amides of unsaturated carboxylic acids and polyamine compounds. Also suitable are addition reaction products of unsaturated carboxylic acid esters or amides having a nucleophilic substituent such as a hydroxyl group, amino group, or sulfanyl group with monofunctional or polyfunctional isocyanates or epoxies, and dehydration condensation reaction products of monofunctional or polyfunctional carboxylic acids. Also suitable are addition reaction products of unsaturated carboxylic acid esters or amides having an electrophilic substituent such as an isocyanate group or an epoxy group with monofunctional or polyfunctional alcohols, amines, or thiols, and substitution reaction products of unsaturated carboxylic acid esters or amides having a leaving substituent such as a halogeno group or a tosyloxy group with monofunctional or polyfunctional alcohols, amines, or thiols. As another example, it is also possible to use a group of compounds in which the above-mentioned unsaturated carboxylic acids are replaced with unsaturated phosphonic acids, vinylbenzene derivatives such as styrene, vinyl ethers, allyl ethers, etc. Specific examples can be found in paragraphs 0113 to 0122 of JP 2016-027357 A, the contents of which are incorporated herein by reference.

[0221] The radical crosslinking agent is preferably a compound having a boiling point of 100°C or higher under normal pressure. Examples of compounds having a boiling point of 100°C or higher under normal pressure include the compounds described in paragraph 0203 of WO 2021 / 112189, the contents of which are incorporated herein by reference.

[0222] Other preferred radical crosslinking agents include the radical polymerizable compounds described in paragraphs 0204 to 0208 of WO 2021 / 112189, the contents of which are incorporated herein by reference.

[0223] Preferred radical crosslinking agents include dipentaerythritol triacrylate (commercially available products include KAYARAD D-330 (manufactured by Nippon Kayaku Co., Ltd.)), dipentaerythritol tetraacrylate (commercially available products include KAYARAD D-320 (manufactured by Nippon Kayaku Co., Ltd.) and A-TMMT (manufactured by Shin-Nakamura Chemical Co., Ltd.)), dipentaerythritol penta(meth)acrylate (commercially available products include KAYARAD D-310 (manufactured by Nippon Kayaku Co., Ltd.)), and dipentaerythritol hexa(meth)acrylate (commercially available products include KAYARAD DPHA (manufactured by Nippon Kayaku Co., Ltd.) and A-DPH (manufactured by Shin-Nakamura Chemical Co., Ltd.)), and structures in which the (meth)acryloyl group is bonded via an ethylene glycol residue or a propylene glycol residue. Oligomers of these agents can also be used.

[0224] Commercially available radical crosslinking agents include, for example, SR-494, a tetrafunctional acrylate having four ethyleneoxy chains, SR-209, 231, and 239, which are difunctional methacrylates having four ethyleneoxy chains (all manufactured by Sartomer Corporation), DPCA-60, a hexafunctional acrylate having six pentyleneoxy chains, and TPA-330, a trifunctional acrylate having three isobutyleneoxy chains (all manufactured by Nippon Kayaku Co., Ltd.), and urethane oligomers such as Examples of such an ester include UAS-10 and UAB-140 (manufactured by Nippon Paper Industries Co., Ltd.), NK Ester M-40G, NK Ester 4G, NK Ester M-9300, NK Ester A-9300, and UA-7200 (manufactured by Shin-Nakamura Chemical Co., Ltd.), DPHA-40H (manufactured by Nippon Kayaku Co., Ltd.), UA-306H, UA-306T, UA-306I, AH-600, T-600, and AI-600 (manufactured by Kyoeisha Chemical Co., Ltd.), and Blenmar PME400 (manufactured by NOF Corporation).

[0225] Suitable radical crosslinking agents include urethane acrylates such as those described in JP-B No. 48-041708, JP-A No. 51-037193, JP-B No. 02-032293, and JP-B No. 02-016765, and urethane compounds having an ethylene oxide skeleton such as those described in JP-B No. 58-049860, JP-B No. 56-017654, JP-B No. 62-039417, and JP-B No. 62-039418. Compounds having an amino structure or a sulfide structure in the molecule, such as those described in JP-A Nos. 63-277653, 63-260909, and JP-A No. 01-105238, can also be used as radical crosslinking agents.

[0226] The radical crosslinking agent may be a radical crosslinking agent having an acid group such as a carboxy group or a phosphate group. The radical crosslinking agent having an acid group is preferably an ester of an aliphatic polyhydroxy compound and an unsaturated carboxylic acid, and more preferably a radical crosslinking agent obtained by reacting a non-aromatic carboxylic anhydride with an unreacted hydroxy group of an aliphatic polyhydroxy compound to provide an acid group. Particularly preferred is a radical crosslinking agent obtained by reacting a non-aromatic carboxylic anhydride with an unreacted hydroxy group of an aliphatic polyhydroxy compound to provide an acid group, in which the aliphatic polyhydroxy compound is pentaerythritol or dipentaerythritol. Examples of commercially available products include polybasic acid-modified acrylic oligomers M-510 and M-520 manufactured by Toagosei Co., Ltd.

[0227] The acid value of the radical crosslinking agent having an acid group is preferably 0.1 to 300 mgKOH / g, more preferably 1 to 100 mgKOH / g. When the acid value of the radical crosslinking agent is within the above range, the agent has excellent handleability in production and developability. Furthermore, the agent has good polymerizability. The acid value is measured in accordance with the description of JIS K 0070:1992.

[0228] As the radical crosslinking agent, a radical crosslinking agent having at least one selected from the group consisting of a urea bond and a urethane bond (hereinafter also referred to as "crosslinking agent U") is also preferred. In the present invention, the urea bond is a radical crosslinking agent having at least one selected from the group consisting of *-NR Ｎ —C(═O)—NR Ｎ- is a bond represented by *, and R Ｎ Each of the *'s independently represents a hydrogen atom or a monovalent organic group, and each * represents a bonding site with a carbon atom. In the present invention, the urethane bond is *—O—C(═O)—NR Ｎ - is a bond represented by *, and R Ｎ represents a hydrogen atom or a monovalent organic group, and * represents a bonding site with a carbon atom. The inclusion of crosslinker U in a composition may improve chemical resistance, resolution, and the like. Crosslinker U may have only one urea bond or urethane bond, may have one or more urea bonds and one or more urethane bonds, may have no urethane bonds but two or more urea bonds, or may have no urea bonds but two or more urethane bonds. The total number of urea bonds and urethane bonds in crosslinker U is 1 or more, preferably 1 to 10, more preferably 1 to 4, and even more preferably 1 or 2. When crosslinker U does not have a urethane bond, the number of urea bonds in crosslinker U is 1 or more, preferably 1 to 10, more preferably 1 to 4, and even more preferably 1 or 2. When crosslinker U does not have a urea bond, the number of urethane bonds in crosslinker U is 1 or more, preferably 1 to 10, more preferably 1 to 4, and even more preferably 1 or 2.

[0229] The radical polymerizable group in the crosslinking agent U is not particularly limited, but examples thereof include a vinyl group, an allyl group, a (meth)acryloyl group, a (meth)acryloxy group, a (meth)acrylamide group, a vinylphenyl group, and a maleimide group. A (meth)acryloxy group, a (meth)acrylamide group, a vinylphenyl group, or a maleimide group is preferred, and a (meth)acryloxy group is more preferred. When the crosslinking agent U has two or more radical polymerizable groups, the structures of the respective radical polymerizable groups may be the same or different. The number of radical polymerizable groups in the crosslinking agent U may be only one or may be two or more, preferably 1 to 10, more preferably 1 to 6, and particularly preferably 1 to 4. The radical polymerizable group value (mass of the compound per mole of radical polymerizable group) in the crosslinking agent U is preferably 150 to 400 g / mol. From the viewpoint of chemical resistance of the cured product, the lower limit of the radical polymerizable group value is more preferably 200 g / mol or more, even more preferably 210 g / mol or more, even more preferably 220 g / mol or more, even more preferably 230 g / mol or more, still more preferably 240 g / mol or more, and particularly preferably 250 g / mol or more. From the viewpoint of developability, the upper limit of the radical polymerizable group value is more preferably 350 g / mol or less, even more preferably 330 g / mol or less, and particularly preferably 300 g / mol or less. In particular, the polymerizable group value of crosslinking agent U is preferably 210 to 400 g / mol, and more preferably 220 to 400 g / mol.

[0230] The crosslinking agent U preferably has a structure represented by the following formula (U-1): In formula (U-1), R Ｕ１ represents a hydrogen atom or a monovalent organic group, and A represents —O— or —NR Ｎ - and R Ｎ is a hydrogen atom or a monovalent organic group, Z Ｕ１ is an m-valent organic group, and Z Ｕ２ is an (n+1)-valent organic group, X is a radical polymerizable group, n is an integer of 1 or more, and m is an integer of 1 or more.

[0231] R Ｕ１ R is preferably a hydrogen atom, an alkyl group or an aromatic hydrocarbon group, and more preferably a hydrogen atom. Ｎ is preferably a hydrogen atom, an alkyl group or an aromatic hydrocarbon group, more preferably a hydrogen atom. Ｕ１ represents a hydrocarbon group, -O-, -C(=O)-, -S-, -S(=O) ２ -, -NR Ｎ - or a group in which two or more of these are bonded is preferred, and a hydrocarbon group, or a hydrocarbon group and -O-, -C(=O)-, -S-, -S(=O) ２ - and -NR Ｎ - is more preferred. The hydrocarbon group is preferably a hydrocarbon group having 20 or less carbon atoms, more preferably a hydrocarbon group having 18 or less carbon atoms, and even more preferably a hydrocarbon group having 16 or less carbon atoms. Examples of the hydrocarbon group include saturated aliphatic hydrocarbon groups, aromatic hydrocarbon groups, and groups represented by a combination of these. R Ｎ represents a hydrogen atom or a monovalent organic group, preferably a hydrogen atom or a hydrocarbon group, more preferably a hydrogen atom or an alkyl group, and even more preferably a hydrogen atom or a methyl group. Ｕ２ represents a hydrocarbon group, -O-, -C(=O)-, -S-, -S(=O) ２ -, -NR Ｎ - or a group in which two or more of these are bonded is preferred, and a hydrocarbon group, or a hydrocarbon group and -O-, -C(=O)-, -S-, -S(=O) ２ - and -NR Ｎ A group bonded to at least one group selected from the group consisting of - is more preferred. Ｕ１Examples of the groups include those listed in 1. and preferred embodiments are also the same. X is not particularly limited, but examples include a vinyl group, an allyl group, a (meth)acryloyl group, a (meth)acryloxy group, a (meth)acrylamide group, a vinylphenyl group, and a maleimide group, with a (meth)acryloxy group, a (meth)acrylamide group, a vinylphenyl group, or a maleimide group being preferred, and a (meth)acryloxy group being more preferred. n is preferably an integer of 1 to 10, more preferably an integer of 1 to 4, even more preferably 1 or 2, and particularly preferably 1. m is preferably an integer of 1 to 10, more preferably an integer of 1 to 4, and even more preferably 1 or 2.

[0232] It is also preferable that the crosslinking agent U has at least one of a hydroxy group, an alkyleneoxy group, an amide group, and a cyano group. From the viewpoint of the chemical resistance of the resulting cured film, the hydroxy group may be an alcoholic hydroxy group or a phenolic hydroxy group, but an alcoholic hydroxy group is preferred. From the viewpoint of the chemical resistance of the resulting cured film, the alkyleneoxy group is preferably an alkyleneoxy group having 2 to 20 carbon atoms, more preferably an alkyleneoxy group having 2 to 10 carbon atoms, even more preferably an alkyleneoxy group having 2 to 4 carbon atoms, even more preferably an ethyleneoxy group or a propyleneoxy group, and particularly preferably an ethylene group. The alkyleneoxy group may be contained in the crosslinking agent U as a polyalkyleneoxy group. In this case, the number of repeating alkyleneoxy groups is preferably 2 to 10, more preferably 2 to 6. The amide group is represented by -C(=O)-NR Ｎ - refers to a bond represented by R Ｎ When the crosslinking agent U has an amide group, the crosslinking agent U may be, for example, R—C(═O)—NR Ｎ - a group represented by *, or *-C(=O)-NR ＮIt can be contained as a group represented by -R. R represents a hydrogen atom or a monovalent substituent, and is preferably a hydrogen atom or a hydrocarbon group, and more preferably a hydrogen atom, an alkyl group, or an aromatic hydrocarbon group. Crosslinking agent U may have two or more structures selected from the group consisting of a hydroxy group, an alkyleneoxy group (however, when a polyalkyleneoxy group is formed, a polyalkyleneoxy group), an amide group, and a cyano group in the molecule, but an embodiment in which only one structure is present in the molecule is also preferred. The hydroxy group, alkyleneoxy group, amide group, and cyano group may be present at any position in crosslinking agent U, but from the viewpoint of chemical resistance, it is also preferred that at least one selected from the group consisting of a hydroxy group, an alkyleneoxy group, an amide group, and a cyano group is linked to at least one radically polymerizable group contained in crosslinking agent U via a linking group containing a urea bond or a urethane bond (hereinafter also referred to as "linking group L2-1"). In particular, when crosslinking agent U contains only one radically polymerizable group, it is preferred that the radically polymerizable group contained in crosslinking agent U and at least one selected from the group consisting of a hydroxy group, an alkyleneoxy group, an amide group, and a cyano group are linked via a linking group containing a urea bond or a urethane bond (hereinafter also referred to as "linking group L2-2"). When crosslinking agent U contains an alkyleneoxy group (however, when it constitutes a polyalkyleneoxy group, it is a polyalkyleneoxy group) and has the linking group L2-1 or the linking group L2-2, the structure bonded to the side of the alkyleneoxy group (however, when it constitutes a polyalkyleneoxy group, it is a polyalkyleneoxy group) opposite to the linking group L2-1 or the linking group L2-2 is not particularly limited, but is preferably a hydrocarbon group, a radically polymerizable group, or a group represented by a combination thereof. As the hydrocarbon group, a hydrocarbon group having 20 or fewer carbon atoms is preferred, a hydrocarbon group having 18 or fewer carbon atoms is more preferred, and a hydrocarbon group having 16 or fewer carbon atoms is even more preferred. Examples of the hydrocarbon group include saturated aliphatic hydrocarbon groups, aromatic hydrocarbon groups, and groups represented by a combination thereof. Preferred embodiments of the radical polymerizable group are the same as those of the radical polymerizable group in the crosslinking agent U.When crosslinking agent U contains an amide group and has the linking group L2-1 or L2-2, the structure bonded to the side of the amide group opposite the linking group L2-1 or L2-2 is not particularly limited, but is preferably a hydrocarbon group, a radically polymerizable group, or a group represented by a combination thereof. The hydrocarbon group is preferably a hydrocarbon group having 20 or fewer carbon atoms, more preferably a hydrocarbon group having 18 or fewer carbon atoms, and even more preferably a hydrocarbon group having 16 or fewer carbon atoms. Examples of the hydrocarbon group include saturated aliphatic hydrocarbon groups, aromatic hydrocarbon groups, and groups represented by a combination thereof. Preferred aspects of the radically polymerizable group are the same as those of the radically polymerizable group in crosslinking agent U described above. In the above aspect, the carbon atom side of the amide group may be bonded to the linking group L2-1 or L2-2, or the nitrogen atom side of the amide group may be bonded to the linking group L2-1 or L2-2. Among these, from the viewpoints of adhesion to the substrate, chemical resistance, and suppression of Cu voids, it is preferable that crosslinking agent U have a hydroxy group.

[0233] From the viewpoint of compatibility with the heterocycle-containing polymer, etc., the crosslinking agent U preferably contains an aromatic group. The aromatic group is preferably directly bonded to a urea bond or urethane bond contained in the crosslinking agent U. When the crosslinking agent U contains two or more urea bonds or urethane bonds, it is preferable that one of the urea bonds or urethane bonds is directly bonded to the aromatic group. The aromatic group may be an aromatic hydrocarbon group or an aromatic heterocyclic group, or may have a structure in which these form a condensed ring, but is preferably an aromatic hydrocarbon group. The aromatic hydrocarbon group is preferably an aromatic hydrocarbon group having 6 to 30 carbon atoms, more preferably an aromatic hydrocarbon group having 6 to 20 carbon atoms, and even more preferably a group in which two or more hydrogen atoms have been removed from a benzene ring structure. The aromatic heterocyclic group is preferably a 5- or 6-membered aromatic heterocyclic group. Examples of the aromatic heterocyclic ring in such an aromatic heterocyclic group include pyrrole, imidazole, triazole, tetrazole, pyrazole, furan, thiophene, oxazole, isoxazole, thiazole, pyridine, pyrazine, pyrimidine, pyridazine, triazine, etc. These rings may be condensed with other rings, for example, as in indole and benzimidazole. The heteroatom contained in the aromatic heterocyclic group is preferably a nitrogen atom, an oxygen atom, or a sulfur atom. The aromatic group is preferably contained in a linking group that links two or more radical polymerizable groups and contains a urea bond or a urethane bond, or a linking group that links at least one selected from the group consisting of the above-mentioned hydroxy group, alkyleneoxy group, amide group, and cyano group to at least one radical polymerizable group contained in the crosslinking agent U.

[0234] The number of atoms (linking chain length) between the urea bond or urethane bond and the radical polymerizable group in crosslinking agent U is not particularly limited, but is preferably 30 or less, more preferably 2 to 20, and even more preferably 2 to 10. When crosslinking agent U contains a total of two or more urea bonds or urethane bonds, when it contains two or more radical polymerizable groups, or when it contains two or more urea bonds or urethane bonds and two or more radical polymerizable groups, the minimum number of atoms (linking chain length) between the urea bond or urethane bond and the radical polymerizable group may be within the above range. In this specification, the "number of atoms (linking chain length) between the urea bond or urethane bond and the polymerizable group" refers to the atomic chain on the path connecting the two atoms or atomic groups to be linked that connects these objects via the shortest distance (minimum number of atoms). For example, in the structure represented by the following formula, the number of atoms (linking chain length) between the urea bond and the radical polymerizable group (methacryloyloxy group) is 2.

[0235] [Axis of symmetry] It is also preferable that the crosslinking agent U is a compound having a structure that does not have an axis of symmetry. The fact that the crosslinking agent U does not have an axis of symmetry means that the crosslinking agent U is a bilaterally asymmetric compound that does not have an axis that would produce a molecule identical to the original molecule by rotating the entire compound. Furthermore, when the structural formula of the crosslinking agent U is written on paper, the fact that the crosslinking agent U does not have an axis of symmetry means that the structural formula of the crosslinking agent U cannot be written in a form that has an axis of symmetry. It is believed that the fact that the crosslinking agent U does not have an axis of symmetry suppresses aggregation of the crosslinking agent U molecules in the composition film.

[0236] [Molecular Weight] The molecular weight of the crosslinking agent U is preferably 100 to 2,000, more preferably 150 to 1,500, and even more preferably 200 to 900.

[0237] The method for producing the crosslinking agent U is not particularly limited, but for example, the crosslinking agent U can be obtained by reacting a radical polymerizable compound and a compound having an isocyanate group with a compound having at least one of a hydroxy group and an amino group.

[0238] Specific examples of the crosslinking agent U are shown below, but the crosslinking agent U is not limited to these.

[0239] From the viewpoints of pattern resolution and film stretchability, it is preferable to use a bifunctional methacrylate or acrylate in the composition. Specific compounds include triethylene glycol diacrylate, triethylene glycol dimethacrylate, tetraethylene glycol dimethacrylate, tetraethylene glycol diacrylate, PEG (polyethylene glycol) 200 diacrylate, PEG 200 dimethacrylate, PEG 600 diacrylate, PEG 600 dimethacrylate, polytetraethylene glycol diacrylate, polytetraethylene glycol dimethacrylate, dipropylene glycol diacrylate, tripropylene glycol diacrylate, neopentyl glycol diacrylate, neopentyl glycol dimethacrylate, 3-methyl-1,5-pentanediol diacrylate, 1,6-hexyl ... Examples of usable radical crosslinkers include xanediol diacrylate, 1,6-hexanediol dimethacrylate, dimethylol-tricyclodecane diacrylate, dimethylol-tricyclodecane dimethacrylate, ethylene oxide (EO) adduct diacrylate of bisphenol A, propylene oxide (PO) adduct dimethacrylate of bisphenol A, propylene oxide (PO) adduct dimethacrylate of bisphenol A, 2-hydroxy-3-acryloyloxypropyl methacrylate, EO-modified isocyanuric acid diacrylate, EO-modified isocyanuric acid dimethacrylate, and other bifunctional acrylates and bifunctional methacrylates having urethane bonds. Two or more of these can be mixed and used as needed. For example, PEG200 diacrylate refers to polyethylene glycol diacrylate with a polyethylene glycol chain formula weight of approximately 200. From the viewpoint of suppressing warpage of the pattern (cured product), a monofunctional radical crosslinker is preferably used as the radical crosslinker for the composition.Preferred examples of monofunctional radical crosslinking agents include (meth)acrylic acid derivatives such as n-butyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, 2-hydroxyethyl (meth)acrylate, butoxyethyl (meth)acrylate, carbitol (meth)acrylate, cyclohexyl (meth)acrylate, benzyl (meth)acrylate, phenoxyethyl (meth)acrylate, N-methylol (meth)acrylamide, glycidyl (meth)acrylate, polyethylene glycol mono(meth)acrylate, and polypropylene glycol mono(meth)acrylate; N-vinyl compounds such as N-vinylpyrrolidone and N-vinylcaprolactam; and allyl glycidyl ether. Preferred monofunctional radical crosslinking agents include compounds having a boiling point of 100°C or higher under normal pressure in order to suppress volatilization before exposure. Other examples of bifunctional or higher radical crosslinking agents include allyl compounds such as diallyl phthalate and triallyl trimellitate.

[0240] When a radical crosslinking agent is contained, the content of the radical crosslinking agent is preferably more than 0% by mass and not more than 60% by mass, based on the total solid content of the composition. The lower limit is more preferably 5% by mass or more. The upper limit is more preferably 50% by mass or less, and even more preferably 30% by mass or less.

[0241] The radical crosslinking agent may be used alone or in combination of two or more. When two or more types are used in combination, the total amount thereof is preferably within the above range.

[0242] [Other Crosslinking Agents] The composition preferably contains another crosslinking agent different from the radical crosslinker described above. The other crosslinking agent refers to a crosslinking agent other than the radical crosslinker described above. It is preferably a compound having multiple groups in its molecule that promote a reaction to form a covalent bond with other compounds in the composition or their reaction products upon exposure to light by the photoacid generator or photobase generator described above. It is also preferable for the compound to have multiple groups in its molecule that promote a reaction to form a covalent bond with other compounds in the composition or their reaction products under the action of an acid or base. The acid or base is preferably an acid or base generated from a photoacid generator or photobase generator during the exposure step. Examples of other crosslinking agents include the compounds described in paragraphs 0179 to 0207 of WO 2022 / 145355. The above descriptions are incorporated herein by reference.

[0243] [Polymerization initiator] The composition preferably contains a polymerization initiator. The polymerization initiator may be a thermal polymerization initiator or a photopolymerization initiator, but it is particularly preferable that the composition contains a photopolymerization initiator. The photopolymerization initiator is preferably a photoradical polymerization initiator. The photoradical polymerization initiator is not particularly limited and can be appropriately selected from known photoradical polymerization initiators. For example, a photoradical polymerization initiator that is photosensitive to light in the ultraviolet to visible region is preferred. Alternatively, the composition may be an activator that reacts with a photoexcited sensitizer to generate active radicals.

[0244] The photoradical polymerization initiator has a capacity of at least about 50 L·mol within a wavelength range of about 240 to 800 nm (preferably 330 to 500 nm). －１ ・cm －１ The molar absorption coefficient of the compound can be measured using a known method. For example, it is preferable to measure the molar absorption coefficient using an ultraviolet-visible spectrophotometer (Varian Cary-5 spectrophotometer) at a concentration of 0.01 g / L using ethyl acetate as a solvent.

[0245] Any known compound can be used as the photoradical polymerization initiator. Examples include halogenated hydrocarbon derivatives (e.g., compounds having a triazine skeleton, compounds having an oxadiazole skeleton, compounds having a trihalomethyl group, etc.), acylphosphine compounds such as acylphosphine oxide, hexaarylbiimidazole, oxime compounds such as oxime derivatives, organic peroxides, thio compounds, ketone compounds, aromatic onium salts, ketoxime ethers, α-aminoketone compounds such as aminoacetophenone, α-hydroxyketone compounds such as hydroxyacetophenone, azo compounds, azide compounds, metallocene compounds, organic boron compounds, and iron arene complexes. For details of these compounds, please refer to paragraphs

[0165] to

[0182] of JP 2016-027357 A and paragraphs

[0138] to

[0151] of WO 2015 / 199219 A, the contents of which are incorporated herein by reference. Further, paragraphs 0065 to 0111 of JP 2014-130173 A, compounds described in Japanese Patent No. 6301489, MATERIAL STAGE 37 to 60p, vol. 19, No. 3,2019 described peroxide-based photopolymerization initiators, photopolymerization initiators described in WO 2018 / 221177, photopolymerization initiators described in WO 2018 / 110179, photopolymerization initiators described in JP 2019-043864 A, photopolymerization initiators described in JP 2019-044030 A, peroxide-based initiators described in JP 2019-167313 A can be mentioned, the contents of which are incorporated herein by reference.

[0246] Examples of ketone compounds include the compounds described in paragraph 0087 of JP 2015-087611 A, the contents of which are incorporated herein by reference. As a commercially available product, Kayacure-DETX-S (manufactured by Nippon Kayaku Co., Ltd.) is also preferably used.

[0247] In one embodiment of the present invention, a hydroxyacetophenone compound, an aminoacetophenone compound, or an acylphosphine compound can be suitably used as the photoradical polymerization initiator. More specifically, for example, an aminoacetophenone-based initiator described in JP-A-10-291969 or an acylphosphine oxide-based initiator described in Japanese Patent No. 4225898 can be used, the contents of which are incorporated herein by reference.

[0248] Examples of α-hydroxyketone initiators that can be used include Omnirad 184, Omnirad 1173, Omnirad 2959, and Omnirad 127 (all manufactured by IGM Resins B.V.), IRGACURE 184 (IRGACURE is a registered trademark), DAROCUR 1173, IRGACURE 500, IRGACURE-2959, and IRGACURE 127 (all manufactured by BASF).

[0249] Examples of α-aminoketone initiators that can be used include Omnirad 907, Omnirad 369, Omnirad 369E, and Omnirad 379EG (all manufactured by IGM Resins B.V.), and IRGACURE 907, IRGACURE 369, and IRGACURE 379 (all manufactured by BASF).

[0250] As the aminoacetophenone initiator, acylphosphine oxide initiator, and metallocene compound, for example, compounds described in paragraphs 0161 to 0163 of WO 2021 / 112189 can also be suitably used. The contents of this specification are incorporated herein by reference.

[0251] As the photoradical polymerization initiator, an oxime compound is more preferably used. By using an oxime compound, it is possible to more effectively improve the exposure latitude. An oxime compound is particularly preferred because it has a wide exposure latitude (exposure margin) and also functions as a photocuring accelerator.

[0252] Specific examples of the oxime compound include compounds described in JP-A-2001-233842, compounds described in JP-A-2000-080068, compounds described in JP-A-2006-342166, compounds described in J. C. S. Perkin II (1979, pp. 1653-1660), compounds described in J. C. S. Perkin II (1979, pp. 156-162), compounds described in Journal of Photopolymer Science and Technology (1995, pp.202-232) described compounds, compounds described in JP-A-2000-066385, compounds described in JP-T-2004-534797, compounds described in JP-A-2017-019766, compounds described in Japanese Patent No. 6065596, compounds described in WO 2015 / 152153, compounds described in WO 2017 / 051680, compounds described in JP-A-2017-198865, compounds described in paragraphs 0025 to 0038 of WO 2017 / 164127, compounds described in WO 2013 / 167515 and the like, the contents of which are incorporated herein.

[0253] Preferred oxime compounds include, for example, compounds having the following structure: 3-(benzoyloxy(imino))butan-2-one, 3-(acetoxy(imino))butan-2-one, 3-(propionyloxy(imino))butan-2-one, 2-(acetoxy(imino))pentan-3-one, 2-(acetoxy(imino))-1-phenylpropan-1-one, 2-(benzoyloxy(imino))-1-phenylpropan-1-one, 3-((4-toluenesulfonyloxy)imino)butan-2-one, and 2-(ethoxycarbonyloxy(imino))-1-phenylpropan-1-one. In the composition, it is particularly preferable to use an oxime compound as a photoradical polymerization initiator. The oxime compound as a photoradical polymerization initiator has a linking group of >C═N—O—C(═O)— in the molecule.

[0254]

[0255] Commercially available oxime compounds include IRGACURE OXE 01, IRGACURE OXE 02, IRGACURE OXE 03, and IRGACURE OXE 04 (manufactured by BASF), ADEKA OPTOMER N-1919 (manufactured by ADEKA Corporation, photoradical polymerization initiator 2 described in JP 2012-014052 A), TR-PBG-304, TR-PBG-305 (manufactured by Changzhou Strong Electronic New Materials Co., Ltd.), ADEKA ARCLES NCI-730, NCI-831, and ADEKA ARCLES NCI-930 (manufactured by ADEKA Corporation), DFI-091 (manufactured by Daito ChemiX Co., Ltd.), and SpeedCure PDO (SARTOMER Also, an oxime compound having the following structure can be used.

[0256] Examples of photoradical polymerization initiators include oxime compounds having a fluorene ring, oxime compounds having a skeleton in which at least one benzene ring of a carbazole ring is replaced with a naphthalene ring, and oxime compounds having a fluorine atom, as described in paragraphs 0169 to 0171 of WO 2021 / 112189. Also usable are oxime compounds having a nitro group, oxime compounds having a benzofuran skeleton, and oxime compounds in which a substituent having a hydroxy group is bonded to a carbazole skeleton, as described in paragraphs 0208 to 0210 of WO 2021 / 020359. The contents of these compounds are incorporated herein by reference.

[0257] In addition, compounds described in paragraphs 0113 to 0117 of JP-A No. 2023-058585 can also be used as the photopolymerization initiator, the disclosure of which is incorporated herein by reference.

[0258] When the composition contains a photopolymerization initiator, the content thereof is preferably 0.1 to 30% by mass, more preferably 0.1 to 20% by mass, even more preferably 0.5 to 15% by mass, and even more preferably 1.0 to 10% by mass, based on the total solids content of the composition. Only one type of photopolymerization initiator may be contained, or two or more types may be contained. When two or more types of photopolymerization initiators are contained, the total amount is preferably within the above range. Since the photopolymerization initiator may also function as a thermal polymerization initiator, crosslinking by the photopolymerization initiator may be further promoted by heating in an oven, hot plate, or the like.

[0259] [Sensitizer] The composition may contain a sensitizer. The sensitizer absorbs specific actinic radiation and becomes electronically excited. The electronically excited sensitizer comes into contact with a thermal radical polymerization initiator, a photoradical polymerization initiator, or the like, and undergoes electron transfer, energy transfer, heat generation, and other actions. This causes the thermal radical polymerization initiator or the photoradical polymerization initiator to undergo a chemical change and decompose, generating a radical, acid, or base. Usable sensitizers include benzophenones, Michler's ketones, coumarins, pyrazole azos, anilino azos, triphenylmethanes, anthraquinones, anthracenes, anthrapyridones, benzylidenes, oxonols, pyrazolotriazole azos, pyridone azos, cyanines, phenothiazines, pyrrolopyrazole azomethines, xanthenes, phthalocyanines, benzopyrans, and indigo compounds.Examples of the sensitizer include Michler's ketone, 4,4'-bis(diethylamino)benzophenone, 2,5-bis(4'-diethylaminobenzal)cyclopentane, 2,6-bis(4'-diethylaminobenzal)cyclohexanone, 2,6-bis(4'-diethylaminobenzal)-4-methylcyclohexanone, 4,4'-bis(dimethylamino)chalcone, 4,4'-bis(diethylamino)chalcone, p-dimethylaminocinnamylideneindanone, p-dimethylaminobenzylideneindanone, and Non, 2-(p-dimethylaminophenylbiphenylene)benzothiazole, 2-(p-dimethylaminophenylvinylene)benzothiazole, 2-(p-dimethylaminophenylvinylene)isonaphthothiazole, 1,3-bis(4'-dimethylaminobenzal)acetone, 1,3-bis(4'-diethylaminobenzal)acetone, 3,3'-carbonyl-bis(7-diethylaminocoumarin), 3-acetyl-7-dimethylaminocoumarin, 3-ethoxycarbonyl-7-dimethylaminocoumarin Phosphorus, 3-benzyloxycarbonyl-7-dimethylaminocoumarin, 3-methoxycarbonyl-7-diethylaminocoumarin, 3-ethoxycarbonyl-7-diethylaminocoumarin (ethyl 7-(diethylamino)coumarin-3-carboxylate), N-phenyl-N'-ethylethanolamine, N-phenyldiethanolamine, N-p-tolyldiethanolamine, N-phenylethanolamine, 4-morpholinobenzophenone, isoamyl dimethylaminobenzoate, isoamyl diethylaminobenzoate Examples of sensitizing dyes include soamyl, 2-mercaptobenzimidazole, 1-phenyl-5-mercaptotetrazole, 2-mercaptobenzothiazole, 2-(p-dimethylaminostyryl)benzoxazole, 2-(p-dimethylaminostyryl)benzothiazole, 2-(p-dimethylaminostyryl)naphtho(1,2-d)thiazole, 2-(p-dimethylaminobenzoyl)styrene, diphenylacetamide, benzanilide, N-methylacetanilide, and 3',4'-dimethylacetanilide. Other sensitizing dyes may also be used. For details of sensitizing dyes, please refer to the descriptions in paragraphs 0161 to 0163 of JP-A-2016-027357, the contents of which are incorporated herein by reference.

[0260] When the composition contains a sensitizer, the content of the sensitizer is preferably 0.01 to 20 mass %, more preferably 0.1 to 15 mass %, and still more preferably 0.5 to 10 mass %, based on the total solid content of the composition. The sensitizer may be used alone or in combination of two or more types.

[0261] [Chain Transfer Agent] The composition may contain a chain transfer agent. Chain transfer agents are defined, for example, in the Third Edition of the Polymer Dictionary (edited by the Society of Polymer Science, 2005), pages 683-684. Examples of chain transfer agents include those having -S-S-, -SO ２ Examples of compounds that can be used include compounds having -S-, -N-O-, SH, PH, SiH, and GeH, and dithiobenzoates, trithiocarbonates, dithiocarbamates, and xanthate compounds having a thiocarbonylthio group used in RAFT (Reversible Addition Fragmentation Chain Transfer) polymerization. These compounds can donate hydrogen to low-activity radicals to generate radicals, or can be oxidized and then deprotonated to generate radicals. Thiol compounds are particularly preferred.

[0262] In addition, the chain transfer agent may be a compound described in paragraphs 0152 to 0153 of WO 2015 / 199219, the contents of which are incorporated herein by reference.

[0263] When the composition contains a chain transfer agent, the content of the chain transfer agent is preferably 0.01 to 20 parts by mass, more preferably 0.1 to 10 parts by mass, and even more preferably 0.5 to 5 parts by mass, relative to 100 parts by mass of the total solid content of the composition. The chain transfer agent may be one type, or two or more types. When two or more types of chain transfer agents are used, the total content thereof is preferably within the above range.

[0264] In another preferred embodiment of the present invention, the composition contains two or more polymerization initiators. Specifically, the composition preferably contains a photopolymerization initiator and a thermal polymerization initiator described below, or the composition preferably contains the above-mentioned photoradical polymerization initiator and the above-mentioned photoacid generator.

[0265] By including a photopolymerization initiator and a thermal polymerization initiator described below, pattern formation by exposure becomes possible, and radical polymerization also proceeds more easily during curing by a heating step described below, which may improve performance such as chemical resistance. When a photopolymerization initiator and a thermal polymerization initiator described below are included, the content of the thermal polymerization initiator is preferably 20 to 70% by mass, and more preferably 30 to 60% by mass, relative to the total content of the photopolymerization initiator and the thermal polymerization initiator.

[0266] Inclusion of a photoradical polymerization initiator and a photoacid generator may improve performance such as resolution. When a photopolymerization initiator and a photoacid generator are included, the content ratio of the photoacid generator relative to the total content of the photopolymerization initiator and the photoacid generator is preferably 20 to 70 mass %, more preferably 30 to 60 mass %.

[0267] [Thermal Polymerization Initiator] Examples of the thermal polymerization initiator include a thermal radical polymerization initiator. A thermal radical polymerization initiator is a compound that generates radicals by thermal energy and initiates or promotes the polymerization reaction of a polymerizable compound. Addition of a thermal radical polymerization initiator can also promote the polymerization reaction of the resin and the polymerizable compound, thereby further improving solvent resistance.

[0268] Specific examples of the thermal radical polymerization initiator include compounds described in paragraphs 0074 to 0118 of JP-A-2008-063554, the contents of which are incorporated herein by reference.

[0269] When a thermal polymerization initiator is contained, the content thereof is preferably 0.1 to 30 mass% relative to the total solid content of the composition, more preferably 0.1 to 20 mass%, and even more preferably 0.5 to 15 mass%. The composition may contain only one type of thermal polymerization initiator, or may contain two or more types. When two or more types of thermal polymerization initiators are contained, the total amount is preferably in the above range.

[0270] <Base Generator> The composition may contain a base generator. Here, the base generator is a compound capable of generating a base by physical or chemical action. Preferred base generators include thermal base generators and photobase generators. In particular, when the composition contains a heterocycle-containing polymer precursor, the composition preferably contains a base generator. By containing a thermal base generator in the composition, for example, the cyclization reaction of the precursor can be promoted by heating, and the mechanical properties and chemical resistance of the cured product can be improved, resulting in good performance as an interlayer insulating film for a rewiring layer included in a semiconductor package. The base generator may be an ionic base generator or a nonionic base generator. Examples of the base generated from the base generator include secondary amines and tertiary amines. The base generator is not particularly limited, and known base generators can be used. Examples of known base generators include carbamoyl oxime compounds, carbamoyl hydroxylamine compounds, carbamic acid compounds, formamide compounds, acetamide compounds, carbamate compounds, benzyl carbamate compounds, nitrobenzyl carbamate compounds, sulfonamide compounds, imidazole derivative compounds, amine imide compounds, pyridine derivative compounds, α-aminoacetophenone derivative compounds, quaternary ammonium salt derivative compounds, iminium salts, pyridinium salts, α-lactone ring derivative compounds, amine imide compounds, phthalimide derivative compounds, and acyloxyimino compounds. Specific examples of non-ionic base generators include the compounds described in paragraphs 0249 to 0275 of WO 2022 / 145355. The above descriptions are incorporated herein by reference.

[0271] Examples of the base generator include, but are not limited to, the following compounds:

[0272]

[0273] The molecular weight of the nonionic base generator is preferably 800 or less, more preferably 600 or less, and even more preferably 500 or less. The lower limit is preferably 100 or more, more preferably 200 or more, and even more preferably 300 or more.

[0274] Specific preferred compounds for the ionic base generator include, for example, the compounds described in paragraphs 0148 to 0163 of WO 2018 / 038002.

[0275] Specific examples of ammonium salts include, but are not limited to, the following compounds:

[0276] Specific examples of iminium salts include, but are not limited to, the following compounds:

[0277] The base generator is preferably an amine in which the amino group is protected with a t-butoxycarbonyl group, from the viewpoints of storage stability and generating a base by deprotection during curing.

[0278] Examples of amine compounds protected by a t-butoxycarbonyl group include ethanolamine, 3-amino-1-propanol, 1-amino-2-propanol, 2-amino-1-propanol, 4-amino-1-butanol, 2-amino-1-butanol, 1-amino-2-butanol, 3-amino-2,2-dimethyl-1-propanol, 4-amino-2-methyl-1-butanol, valinol, 3-amino-1,2-propanediol, and 2-amino-1,3-propanediol. alcohol, tyramine, norephedrine, 2-amino-1-phenyl-1,3-propanediol, 2-aminocyclohexanol, 4-aminocyclohexanol, 4-aminocyclohexaneethanol, 4-(2-aminoethyl)cyclohexanol, N-methylethanolamine, 3-(methylamino)-1-propanol, 3-(isopropylamino)propanol, N-cyclohexylethanolamine, α-[2-(methylamino)ethyl]benzyl alcohol, diethanolamine diamine, diisopropanolamine, 3-pyrrolidinol, 2-pyrrolidinemethanol, 4-hydroxypiperidine, 3-hydroxypiperidine, 4-hydroxy-4-phenylpiperidine, 4-(3-hydroxyphenyl)piperidine, 4-piperidinemethanol, 3-piperidinemethanol, 2-piperidinemethanol, 4-piperidineethanol, 2-piperidineethanol, 2-(4-piperidyl)-2-propanol, 1,4-butanolbis(3-aminopropyl)ethanol ter, 1,2-bis(2-aminoethoxy)ethane, 2,2'-oxybis(ethylamine), 1,14-diamino-3,6,9,12-tetraoxatetradecane, 1-aza-15-crown-5-ether, diethylene glycol bis(3-aminopropyl)ether, 1,11-diamino-3,6,9-trioxaundecane, or compounds in which the amino group of an amino acid or a derivative thereof is protected with a t-butoxycarbonyl group, but are not limited to these.

[0279] When the composition contains a base generator, the content of the base generator is preferably 0.1 to 50 parts by mass per 100 parts by mass of the resin in the composition. The lower limit is more preferably 0.3 parts by mass or more, and even more preferably 0.5 parts by mass or more. The upper limit is more preferably 30 parts by mass or less, even more preferably 20 parts by mass or less, still more preferably 10 parts by mass or less, even more preferably 5 parts by mass or less, and particularly preferably 4 parts by mass or less. One or more types of base generators can be used. When two or more types are used, the total amount is preferably within the above range.

[0280] <Solvent> The composition preferably contains a solvent. Any known solvent can be used as the solvent. The solvent is preferably an organic solvent. Examples of the organic solvent include compounds such as esters, ethers, ketones, cyclic hydrocarbons, sulfoxides, amides, ureas, and alcohols.

[0281] Examples of esters include ethyl acetate, n-butyl acetate, isobutyl acetate, hexyl acetate, amyl formate, isoamyl acetate, butyl propionate, isopropyl butyrate, ethyl butyrate, butyl butyrate, methyl lactate, ethyl lactate, γ-butyrolactone, ε-caprolactone, δ-valerolactone, γ-valerolactone, alkyl alkyloxyacetates (for example, methyl alkyloxyacetate, ethyl alkyloxyacetate, butyl alkyloxyacetate (for example, methyl methoxyacetate, ethyl methoxyacetate, butyl methoxyacetate, methyl ethoxyacetate, ethyl ethoxyacetate, etc.)), 3-alkyloxypropionic acid alkyl esters (for example, methyl 3-alkyloxypropionate, ethyl 3-alkyloxypropionate (for example, methyl 3-methoxypropionate, ethyl 3-methoxypropionate, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, etc.)), 2-alkyloxypropionic acid alkyl esters ...alkyloxypropionate, ethyl 3-alkyloxypropionate, 2-alkyloxypropionic acid alkyl esters (for example, methyl 3-methoxypropionate, ethyl 3-methoxypropionate, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, etc.)), 2-alkyloxypropionic acid alkyl esters (for example, methyl 3-alkyloxypropionate, ethyl 3-methoxypropionate, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, etc.)), 2-alkyloxypropionic acid alkyl esters (for example, methyl 3- Preferred examples thereof include alkyl esters of alkyloxypropionates (e.g., methyl 2-alkyloxypropionate, ethyl 2-alkyloxypropionate, propyl 2-alkyloxypropionate (e.g., methyl 2-methoxypropionate, ethyl 2-methoxypropionate, propyl 2-methoxypropionate, methyl 2-ethoxypropionate, ethyl 2-ethoxypropionate)), methyl 2-alkyloxy-2-methylpropionate and ethyl 2-alkyloxy-2-methylpropionate (e.g., methyl 2-methoxy-2-methylpropionate, ethyl 2-ethoxy-2-methylpropionate), methyl pyruvate, ethyl pyruvate, propyl pyruvate, methyl acetoacetate, ethyl acetoacetate, methyl 2-oxobutanoate, ethyl 2-oxobutanoate, ethyl hexanoate, ethyl heptanoate, dimethyl malonate, and diethyl malonate.

[0282] Suitable examples of ethers include ethylene glycol dimethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol ethyl methyl ether, diethylene glycol butyl methyl ether, triethylene glycol dimethyl ether, tetraethylene glycol dimethyl ether, tetrahydrofuran, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, methyl cellosolve acetate, ethyl cellosolve acetate, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol dimethyl ether, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, ethylene glycol monobutyl ether, ethylene glycol monobutyl ether acetate, diethylene glycol ethyl methyl ether, propylene glycol monopropyl ether acetate, and dipropylene glycol dimethyl ether.

[0283] Suitable examples of ketones include methyl ethyl ketone, cyclohexanone, cyclopentanone, 2-heptanone, 3-heptanone, 3-methylcyclohexanone, levoglucosenone, and dihydrolevoglucosenone.

[0284] Suitable examples of cyclic hydrocarbons include aromatic hydrocarbons such as toluene, xylene, and anisole, and cyclic terpenes such as limonene.

[0285] A preferred example of the sulfoxides is dimethyl sulfoxide.

[0286] Preferred examples of the amides include N-methyl-2-pyrrolidone, N-ethyl-2-pyrrolidone, N-cyclohexyl-2-pyrrolidone, N,N-dimethylacetamide, N,N-dimethylformamide, N,N-dimethylisobutyramide, 3-methoxy-N,N-dimethylpropionamide, 3-butoxy-N,N-dimethylpropionamide, N-formylmorpholine, and N-acetylmorpholine.

[0287] Preferred examples of ureas include N,N,N',N'-tetramethylurea and 1,3-dimethyl-2-imidazolidinone.

[0288] Examples of alcohols include methanol, ethanol, 1-propanol, 2-propanol, 1-butanol, 1-pentanol, 1-hexanol, benzyl alcohol, ethylene glycol monomethyl ether, 1-methoxy-2-propanol, 2-ethoxyethanol, diethylene glycol monoethyl ether, diethylene glycol monohexyl ether, triethylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monomethyl ether, polyethylene glycol monomethyl ether, polypropylene glycol, tetraethylene glycol, ethylene glycol monobutyl ether, ethylene glycol monobenzyl ether, ethylene glycol monophenyl ether, methylphenyl carbinol, n-amyl alcohol, methyl amyl alcohol, and diacetone alcohol.

[0289] From the viewpoint of improving the properties of the coated surface, it is also preferable to mix two or more kinds of solvents.

[0290] In the present invention, the solvent is preferably one solvent selected from methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, ethyl cellosolve acetate, ethyl lactate, diethylene glycol dimethyl ether, butyl acetate, methyl 3-methoxypropionate, 2-heptanone, cyclohexanone, cyclopentanone, γ-butyrolactone, γ-valerolactone, 3-methoxy-N,N-dimethylpropionamide, toluene, dimethyl sulfoxide, ethyl carbitol acetate, butyl carbitol acetate, N-methyl-2-pyrrolidone, propylene glycol methyl ether, propylene glycol methyl ether acetate, levoglucosenone, and dihydrolevoglucosenone, or a mixed solvent composed of two or more solvents, and more preferably contains at least one solvent selected from γ-butyrolactone, dimethyl sulfoxide, and N-methyl-2-pyrrolidone. Particularly preferred are a combination of dimethyl sulfoxide and γ-butyrolactone, a combination of dimethyl sulfoxide and γ-valerolactone, a combination of 3-methoxy-N,N-dimethylpropionamide and γ-butyrolactone, a combination of 3-methoxy-N,N-dimethylpropionamide, γ-butyrolactone and dimethyl sulfoxide, or a combination of N-methyl-2-pyrrolidone and ethyl lactate. An embodiment in which toluene is further added to these combined solvents in an amount of approximately 1 to 10% by mass, based on the total mass of the solvents, is also a preferred embodiment of the present invention. In particular, from the viewpoint of storage stability of the composition, an embodiment in which γ-valerolactone is included as a solvent is also a preferred embodiment of the present invention. In such an embodiment, the content of γ-valerolactone relative to the total mass of the solvent is preferably 50% by mass or more, more preferably 60% by mass or more, and even more preferably 70% by mass or more. The upper limit of the above content is not particularly limited and may be 100% by mass. The content may be determined in consideration of the solubility of components such as the heterocycle-containing polymer contained in the composition.Furthermore, when dimethyl sulfoxide and γ-valerolactone are used in combination, the solvent preferably contains 60 to 90% by mass of γ-valerolactone and 10 to 40% by mass of dimethyl sulfoxide, more preferably 70 to 90% by mass of γ-valerolactone and 10 to 30% by mass of dimethyl sulfoxide, and even more preferably 75 to 85% by mass of γ-valerolactone and 15 to 25% by mass of dimethyl sulfoxide, relative to the total mass of the solvent.

[0291] From the viewpoint of coatability, the content of the solvent is preferably an amount that results in a total solids concentration of the composition of 5 to 80 mass%, more preferably an amount that results in a total solids concentration of 5 to 75 mass%, even more preferably an amount that results in a total solids concentration of 10 to 70 mass%, and even more preferably an amount that results in a total solids concentration of 20 to 70 mass%. The solvent content may be adjusted depending on the desired thickness of the coating film and the coating method. When two or more solvents are contained, the total amount of the solvents is preferably within the above range.

[0292] <Metal Adhesion Improver> The composition preferably contains a metal adhesion improver from the viewpoint of improving adhesion to metal materials used for electrodes, wiring, etc. Examples of metal adhesion improvers include silane coupling agents having an alkoxysilyl group, aluminum-based adhesion aids, titanium-based adhesion aids, compounds having a sulfonamide structure, compounds having a thiourea structure, phosphoric acid derivative compounds, β-ketoester compounds, and amino compounds.

[0293] [Silane Coupling Agent] Examples of silane coupling agents include the compounds described in paragraph 0316 of WO 2021 / 112189 and the compounds described in paragraphs 0067 to 0078 of JP 2018-173573 A, the contents of which are incorporated herein by reference. It is also preferable to use two or more different silane coupling agents, as described in paragraphs 0050 to 0058 of JP 2011-128358 A. It is also preferable to use the following compounds as the silane coupling agent. In the formula below, Me represents a methyl group, and Et represents an ethyl group. Furthermore, the following R represents a structure derived from a blocking agent in a blocked isocyanate group. The blocking agent may be selected depending on the desorption temperature, and examples include alcohol compounds, phenol compounds, pyrazole compounds, triazole compounds, lactam compounds, and active methylene compounds. For example, caprolactam is preferred from the viewpoint of achieving a desorption temperature of 160 to 180°C. Commercially available products of such compounds include X-12-1293 (manufactured by Shin-Etsu Chemical Co., Ltd.).

[0294]

[0295] Other silane coupling agents include, for example, vinyltrimethoxysilane, vinyltriethoxysilane, 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, 3-glycidoxypropyltriethoxysilane, p-styryltrimethoxysilane, 3-methacryloxypropylmethyldimethoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-methacryloxypropylmethyldiethoxysilane, 3-methacryloxypropyltriethoxysilane, 3-acryloxypropyltrimethoxysilane, N-2- Examples of suitable silane coupling agents include (aminoethyl)-3-aminopropylmethyldimethoxysilane, N-2-(aminoethyl)-3-aminopropyltrimethoxysilane, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-triethoxysilyl-N-(1,3-dimethylbutylidene)propylamine, N-phenyl-3-aminopropyltrimethoxysilane, tris-(trimethoxysilylpropyl)isocyanurate, 3-ureidopropyltrialkoxysilane, 3-mercaptopropylmethyldimethoxysilane, 3-mercaptopropyltrimethoxysilane, 3-isocyanatopropyltriethoxysilane, and 3-trimethoxysilylpropylsuccinic anhydride. These may be used alone or in combination of two or more. Furthermore, oligomeric compounds having multiple alkoxysilyl groups may also be used as silane coupling agents. Examples of such oligomeric compounds include compounds containing a repeating unit represented by the following formula (S-1): In formula (S-1), R Ｓ１ represents a monovalent organic group, R Ｓ２ represents a hydrogen atom, a hydroxy group or an alkoxy group, and n represents an integer of 0 to 2. Ｓ１is preferably a structure containing a polymerizable group. Examples of the polymerizable group include a group having an ethylenically unsaturated bond, an epoxy group, an oxetanyl group, a benzoxazolyl group, a blocked isocyanate group, and an amino group. Examples of the group having an ethylenically unsaturated bond include a vinyl group, an allyl group, an isoallyl group, a 2-methylallyl group, a group having an aromatic ring directly bonded to a vinyl group (for example, a vinylphenyl group), a (meth)acrylamide group, and a (meth)acryloyloxy group. A vinylphenyl group, a (meth)acrylamide group, or a (meth)acryloyloxy group is preferred, a vinylphenyl group or a (meth)acryloyloxy group is more preferred, and a (meth)acryloyloxy group is even more preferred. R Ｓ２ is preferably an alkoxy group, more preferably a methoxy group or an ethoxy group. n represents an integer of 0 to 2, preferably 1. Here, the structures of the multiple repeating units represented by formula (S-1) contained in the oligomer-type compound may be the same. Here, of the multiple repeating units represented by formula (S-1) contained in the oligomer-type compound, it is preferable that n is 1 or 2 in at least one, more preferably that n is 1 or 2 in at least two, and even more preferably that n is 1 in at least two. Such oligomer-type compounds can be commercially available products, and an example of a commercially available product is KR-513 (manufactured by Shin-Etsu Chemical Co., Ltd.).

[0296] [Aluminum-Based Adhesion Aid] Examples of aluminum-based adhesion aids include aluminum tris(ethylacetoacetate), aluminum tris(acetylacetonate), and ethylacetoacetate aluminum diisopropylate.

[0297] Other metal adhesion improvers that can be used include the compounds described in paragraphs 0046 to 0049 of JP-A-2014-186186 and the sulfide-based compounds described in paragraphs 0032 to 0043 of JP-A-2013-072935, the contents of which are incorporated herein by reference.

[0298] The content of the metal adhesion improver is preferably 0.01 to 30 parts by mass, more preferably 0.1 to 10 parts by mass, and even more preferably 0.5 to 5 parts by mass, relative to 100 parts by mass of the heterocycle-containing polymer. By ensuring that the content is equal to or greater than the above lower limit, the adhesion between the pattern and the metal layer is improved, and by ensuring that the content is equal to or less than the above upper limit, the heat resistance and mechanical properties of the pattern are improved. Only one type of metal adhesion improver may be used, or two or more types may be used. When two or more types are used, it is preferable that the total amount is within the above range.

[0299] <Migration Inhibitor> The composition preferably further contains a migration inhibitor. By including the migration inhibitor, for example, when the composition is applied to a metal layer (or metal wiring) to form a film, migration of metal ions derived from the metal layer (or metal wiring) into the film can be effectively inhibited.

[0300] The migration inhibitor is not particularly limited, but examples thereof include compounds having a heterocycle (pyrrole ring, furan ring, thiophene ring, imidazole ring, oxazole ring, thiazole ring, pyrazole ring, isoxazole ring, isothiazole ring, tetrazole ring, pyridine ring, pyridazine ring, pyrimidine ring, pyrazine ring, piperidine ring, piperazine ring, morpholine ring, 2H-pyran ring, 6H-pyran ring, triazine ring), thioureas and compounds having a sulfanyl group, hindered phenol compounds, salicylic acid derivative compounds, and hydrazide derivative compounds. In particular, triazole compounds such as 1,2,4-triazole, benzotriazole, 3-amino-1,2,4-triazole, and 3,5-diamino-1,2,4-triazole, and tetrazole compounds such as 1H-tetrazole, 5-phenyltetrazole, and 5-amino-1H-tetrazole are preferably used.

[0301] As the migration inhibitor, an ion trapping agent that traps anions such as halogen ions can also be used.

[0302] Other migration inhibitors include the rust inhibitors described in paragraph 0094 of JP-A-2013-015701, the compounds described in paragraphs 0073 to 0076 of JP-A-2009-283711, the compounds described in paragraph 0052 of JP-A-2011-059656, the compounds described in paragraphs 0114, 0116 and 0118 of JP-A-2012-194520, and the compounds described in paragraph 0166 of WO 2015 / 199219. The contents of this specification are incorporated herein by reference.

[0303] Specific examples of the migration inhibitor include the following compounds.

[0304]

[0305] When the composition contains a migration inhibitor, the content of the migration inhibitor is preferably 0.01 to 5.0 mass %, more preferably 0.05 to 2.0 mass %, and even more preferably 0.1 to 1.0 mass %, based on the total solid content of the composition.

[0306] The migration inhibitor may be one kind or two or more kinds. When two or more kinds of migration inhibitors are used, the total amount thereof is preferably within the above range.

[0307] <Polymerization Inhibitor> The composition preferably contains a polymerization inhibitor. Examples of the polymerization inhibitor include phenolic compounds, quinone compounds, amino compounds, N-oxyl free radical compounds, nitro compounds, nitroso compounds, heteroaromatic ring compounds, and metal compounds.

[0308] Specific examples of the polymerization inhibitor include the compounds described in paragraph 0310 of WO 2021 / 112189, p-hydroquinone, o-hydroquinone, 4-hydroxy-2,2,6,6-tetramethylpiperidine 1-oxyl free radical, phenoxazine, 1,4,4-trimethyl-2,3-diazabicyclo[3.2.2]non-2-ene-N,N-dioxide, and the like, the contents of which are incorporated herein by reference.

[0309] When the composition contains a polymerization inhibitor, the content of the polymerization inhibitor is preferably 0.01 to 20 mass%, more preferably 0.02 to 15 mass%, and even more preferably 0.05 to 10 mass%, relative to the total solid content of the composition.

[0310] The polymerization inhibitor may be one kind or two or more kinds. When two or more kinds of polymerization inhibitors are used, the total amount thereof is preferably within the above range.

[0311] [Urea Compound, Carbodiimide Compound, Isourea Compound] From the viewpoint of elongation at break and adhesion to the metal or resin layer, the composition may contain at least one compound selected from the group consisting of a compound having a urea bond (urea compound), a compound having a carbodiimide structure (carbodiimide compound), and a compound having an isourea bond (isourea compound) (hereinafter also referred to as "urea compound, etc."). Among these, it is preferable that the composition further contains a compound having a urea bond. The urea compound, etc. referred to here does not include the above-mentioned polymerizable compounds and compounds corresponding to silane coupling agents. Examples of urea compounds include the compounds described in paragraphs 0334 to 0339 of WO 2022 / 070730.

[0312] Specific examples of the urea compound include, but are not limited to, dicyclohexylurea, diisopropylurea, dicyclohexylcarbodiimide, diisopropylcarbodiimide, dicyclohexylisourea, and diisopropylisourea.

[0313] The total content of the urea compound and the like is preferably 0.1 to 10.0 parts by mass, more preferably 0.5 to 8.0 parts by mass, and even more preferably 1.0 to 6.0 parts by mass, per 100 parts by mass of the heterocycle-containing polymer. The urea compound and the like may be used alone or in combination of two or more types. When two or more types of bases are used in combination in the base-containing treatment liquid, it is preferable that the total content thereof is within the above range.

[0314] <Light absorber> The composition preferably contains a compound (light absorber) whose absorbance at the exposure wavelength decreases upon exposure. Examples of the light absorber include the compounds described in paragraphs

[0159] to

[0183] of WO 2022 / 202647 and the compounds described in paragraphs

[0088] to

[0108] of JP 2019-206689 A. The contents of these compounds are incorporated herein by reference.

[0315] In addition, a preferred embodiment of the present invention is to include a photochromic compound as a light absorber. A photochromic compound is a compound whose absorption spectrum changes as a result of a change in the geometric structure of its molecules due to the absorption of light. Specific examples of photochromic compounds are shown below, but the present invention is not limited thereto.

[0316] The content of the light absorber relative to the total solid content of the composition is not particularly limited, but is preferably 0.1 to 20 mass %, more preferably 0.5 to 10 mass %, and even more preferably 1 to 5 mass %.

[0317] <Other Additives> The composition may contain various additives, as needed, within the scope of obtaining the effects of the present invention, such as surfactants, higher fatty acid derivatives, thermal polymerization initiators, inorganic particles, UV absorbers, organic titanium compounds, antioxidants, photoacid generators, anti-aggregation agents, phenolic compounds, other polymer compounds, plasticizers, and other auxiliary agents (e.g., antifoaming agents, flame retardants, etc.). By appropriately incorporating these components, it is possible to adjust properties such as film physical properties. For details of these components, please refer to, for example, paragraphs 0183 and after of JP 2012-003225 A (corresponding to paragraph 0237 of U.S. Patent Application Publication No. 2013 / 0034812), and paragraphs 0101 to 0104, 0107 to 0109, etc. of JP 2008-250074 A, the contents of which are incorporated herein by reference. When these additives are incorporated, the total content is preferably 3% by mass or less of the solid content of the composition.

[0318] <Characteristics of the composition> The viscosity of the composition can be adjusted by the solid content concentration of the composition. ２ / s~12,000mm ２ / s is preferred, and 2,000 mm ２ / s~10,000mm ２ / s is more preferable, and 2,500 mm ２ / s~8,000mm ２ Within the above range, it is easy to obtain a highly uniform coating film. ２ If the thickness is more than 12,000 mm / s, it is easy to apply the coating to a thickness required for an insulating film for rewiring, for example. ２ If the viscosity is less than 1 / s, a coating film with excellent surface condition can be obtained.

[0319] <Restrictions on substances contained in the composition> The moisture content of the composition is preferably less than 2.0% by mass, more preferably less than 1.5% by mass, and even more preferably less than 1.0% by mass. If it is less than 2.0%, the storage stability of the composition is improved. Methods for maintaining the moisture content include adjusting the humidity under storage conditions and reducing the porosity of the container during storage.

[0320] From the viewpoint of insulating properties, the metal content of the composition is preferably less than 5 mass ppm (parts per million), more preferably less than 1 mass ppm, and even more preferably less than 0.5 mass ppm. Examples of metals include sodium, potassium, magnesium, calcium, iron, copper, chromium, and nickel, but metals contained as complexes of organic compounds and metals are excluded. When multiple metals are contained, the total amount of these metals is preferably within the above range.

[0321] Furthermore, examples of methods for reducing metal impurities unintentionally contained in the composition include selecting raw materials with a low metal content as raw materials constituting the composition, filtering the raw materials constituting the composition, and lining the inside of an apparatus with polytetrafluoroethylene or the like to perform distillation under conditions that minimize contamination as much as possible.

[0322] Considering the use of the composition as a semiconductor material, the content of halogen atoms is preferably less than 500 mass ppm, more preferably less than 300 mass ppm, and even more preferably less than 200 mass ppm from the viewpoint of wiring corrosion. Among them, those present in the form of halogen ions are preferably less than 5 mass ppm, more preferably less than 1 mass ppm, and even more preferably less than 0.5 mass ppm. Examples of halogen atoms include chlorine atoms and bromine atoms. It is preferable that the total of chlorine atoms and bromine atoms, or chlorine ions and bromine ions, is within the above range. Preferred methods for adjusting the content of halogen atoms include ion exchange treatment.

[0323] A conventionally known container can be used as the container for storing the composition. For the purpose of preventing impurities from being mixed into the raw materials or the composition, it is also preferable to use a multi-layer bottle whose inner wall is made of six types of six layers of resin, or a bottle with a seven-layer structure made of six types of resin. Examples of such containers include the container described in JP 2015-123351 A.

[0324] <Preparation of Composition> The composition can be prepared by mixing the above components. The mixing method is not particularly limited, and can be carried out by a conventionally known method. Examples of mixing methods include mixing with a stirring blade, mixing with a ball mill, and mixing by rotating a tank. The temperature during mixing is preferably 10 to 30°C, more preferably 15 to 25°C.

[0325] Filtration using a filter is preferably performed to remove foreign matter such as dust and fine particles from the composition. The filter pore size is, for example, preferably 5 μm or less, more preferably 1 μm or less, even more preferably 0.5 μm or less, and even more preferably 0.1 μm or less. The filter material is preferably polytetrafluoroethylene, polyethylene, or nylon. When the filter material is polyethylene, HDPE (high-density polyethylene) is more preferable. The filter may be pre-washed with an organic solvent. In the filter filtration process, multiple types of filters may be connected in series or parallel. When multiple types of filters are used, filters with different pore sizes or materials may be combined. An example of a connection mode is a mode in which an HDPE filter with a pore size of 1 μm is connected in series as the first stage and an HDPE filter with a pore size of 0.2 μm is connected in series as the second stage. Various materials may also be filtered multiple times. When filtration is performed multiple times, circulating filtration may be used. Filtration may also be performed under pressure. When filtering under pressure, the pressure to be applied is preferably 0.01 MPa or more and 1.0 MPa or less, more preferably 0.03 MPa or more and 0.9 MPa or less, even more preferably 0.05 MPa or more and 0.7 MPa or less, and even more preferably 0.05 MPa or more and 0.5 MPa or less. In addition to filtering using a filter, a process of removing impurities using an adsorbent may be performed. Filter filtering and a process of removing impurities using an adsorbent may be combined. Known adsorbents can be used as the adsorbent. Examples include inorganic adsorbents such as silica gel and zeolite, and organic adsorbents such as activated carbon. After filtering using a filter, the composition filled in a bottle may be placed under reduced pressure and subjected to a degassing process.

[0326] The present invention will be explained in more detail below with reference to examples. The materials, amounts used, ratios, processing details, processing procedures, etc. shown in the following examples can be changed as appropriate without departing from the spirit of the present invention. Therefore, the scope of the present invention is not limited to the specific examples shown below. Unless otherwise specified, "parts" and "%" are based on mass.

[0327] <Resin Synthesis> [Synthesis Example: Synthesis of Polymer 1] 20.80 g (40 mmol) of 4,4'-(4,4'-isopropylidenediphenoxy)diphthalic anhydride was dissolved in 70 g of N-methylpyrrolidone (NMP). Subsequently, 3.81 g (17.6 mmol) of 3,3'-dihydroxybenzidine and 3.74 g (17.6 mmol) of 2,2'-dimethylbenzidine were dissolved in 50 g of NMP and added dropwise over 1 hour at a temperature of 10°C to 25°C. After stirring at 25°C for 30 minutes, 10 g of toluene was added and the mixture was reacted at 200°C for 4 hours under a nitrogen flow and then cooled to 25°C. Subsequently, 15.3 g (50 mmol) of 4-(chloromethyl)styrene, 16.6 g (120 mmol) of potassium carbonate, 1.66 g (12 mmol) of potassium iodide, and 0.08 g of 2,2,6,6-tetramethylpiperidine 1-oxyl free radical were added, and the mixture was reacted at 95°C for 15 hours, then cooled to 25°C and diluted with 120 g of tetrahydrofuran. Subsequently, the reaction solution was added dropwise to a mixture of 1.8 L of methanol and 0.6 L of water, stirred for 15 minutes, and the polyimide resin was filtered. Next, the resin was reslurried in 1 L of water and filtered, then reslurried again in 1 L of methanol and filtered, and dried under reduced pressure at 40°C for 8 hours. Next, the dried resin was dissolved in 250 g of tetrahydrofuran, and 40 g of ion exchange resin (MB-1: manufactured by Organo Corporation) was added thereto. The mixture was stirred for 4 hours, and the ion exchange resin was removed by filtration. After that, the polyimide resin was precipitated in 2 L of methanol and stirred for 15 minutes. The polyimide resin was collected by filtration and dried at 45°C under reduced pressure for 1 day to obtain Polymer 1. Polymer 1 is a resin having a repeating unit represented by the following formula. The subscripts in parentheses of the following repeating units represent the molar ratio of each repeating unit. The structure of the repeating unit is １ The weight average molecular weight of Polymer 1 was determined from the H-NMR spectrum. The weight average molecular weight was 25,000, the number average molecular weight was 10,500, and the imidization rate was 99% or more.

[0328] [Synthesis Example: Synthesis of Polymer 2] - Synthesis of Diamine 2a for Polymer 2 Synthesis - 48.65 g (225 mmol) of 3,3'-dihydroxybenzidine and 375 mL of dimethylformamide were mixed in a flask. Under ice cooling, 98.21 g (450 mmol) of di-t-butyl dicarbonate was added dropwise. After the addition was completed, the mixture was stirred at 60°C for 5 hours. After the reaction was completed and the mixture was cooled to room temperature, 35 mg of 2,2,6,6-tetramethylpiperidine 1-oxyl free radical, 68.68 g (450 mmol) of p-chloromethylstyrene, 74.63 g (540 mmol) of potassium carbonate, and 8.96 g (54.0 mmol) of potassium iodide were added, and the mixture was stirred at 60°C for 3 hours. After the reaction was completed, the mixture was filtered by suction filtration, and the filtrate was added dropwise to 500 mL of water. White crystals precipitated, and the precipitated solid was collected by suction filtration. The obtained white solid was purified by recrystallization using 1000 mL of acetone at 60°C. 125 g (yield 85.6%) of the following intermediate 2b was obtained. The structure of 2b is shown below. １ This was confirmed by H-NMR spectrum. １ H-NMR (BRUKER, AVANCE NEO 400): δ(ppm,DMSO-d6)8.04-7.94(s,2H), 7.75-7.64(d,2H), 7.56-7.42(m,8H), 7.27-7.20(d,2H), 7.19-7.12(d,2H), 6.79-6.64(2H), 5.89-5.77(2H), 5.30-5.15(6H), 1.49-1.43(s,18H)

[0329] 75.0 g (115.6 mmol) of 2b and 500 mL of methylene chloride were mixed in a 1 L flask. 131.8 g (1156 mmol) of trifluoroacetic acid was added at room temperature, and the mixture was stirred at 40°C for 5 hours. After the reaction was completed, 250 mL of methanol was added dropwise under ice cooling, followed by 117.0 g (1156 mmol) of triethylamine. Pale yellow crystals were precipitated, and the precipitated solid was collected by suction filtration. The mixture was suspended and washed in 750 mL of methanol, yielding 40.5 g (73% yield) of (2a). The structure of 2a is shown below. The following structure is １ This was confirmed by H-NMR spectrum.１ H-NMR (BRUKER, AVANCE NEO 400): δ(ppm,DMSO-d6)7.53-7.45(s,8H), 7.05-6.98(d,2H), 6.92-6.85(d,2H), 6.79-6.63(4H), 5.89-5.78(d,2H), 5.29-5.22(d,2H), 5.20-5.13(s,4H), 4.92-4.64(4H)

[0330] Synthesis of Polymer 2: 30.0 g (57.64 mmol) of 4,4'-(4,4'-isopropylidenediphenoxy)diphthalic anhydride and 0.08 g of 2,2,6,6-tetramethylpiperidine 1-oxyl free radical were dissolved in 120 g of N-methylpyrrolidone (NMP) to obtain a solution. Subsequently, 5.50 g (25.9 mmol) of 2,2'-dimethylbenzidine and 11.62 g (25.9 mmol) of 2a were dissolved in 100 g of NMP and added dropwise to the solution over 1 hour at a temperature of 0 to 10°C. After stirring at 25°C for 60 minutes, 18.2 g of pyridine and 14.7 g of acetic anhydride were added and the mixture was reacted at 80°C for 4 hours. After completion of the reaction, the mixture was cooled to 25°C and diluted with 200 g of tetrahydrofuran. Subsequently, the reaction solution was added dropwise to a mixture of 2.0 L of methanol and 0.5 L of water, and after stirring for 15 minutes, the polyimide resin was filtered. Next, the resin was reslurried in 1 L of water, filtered, and then reslurried again in 1 L of methanol, filtered, and dried under reduced pressure at 40 ° C for 10 hours. Subsequently, the dried resin was dissolved in 250 g of tetrahydrofuran, 40 g of ion exchange resin (MB-1: manufactured by Organo Corporation) was added, and the mixture was stirred for 4 hours. The ion exchange resin was removed by filtration, and then the polyimide resin was precipitated in 2 L of methanol and stirred for 15 minutes. The polyimide resin was obtained by filtration and dried under reduced pressure at 45 ° C for 1 day to obtain polymer 2. Polymer 2 is a resin having a repeating unit represented by the following formula. The subscripts in parentheses of the following repeating units represent the molar ratio of each repeating unit. The weight average molecular weight of polymer 2 was 25,000, the number average molecular weight was 12,500, and the imidization rate was 99% or more. １ Determined from H-NMR spectrum.

[0331] [Synthesis Example: Synthesis of Polymer 5 to Polymer 7] Polymer 5 to Polymer 7 were synthesized in the same manner as for Polymer 2, except that the raw materials used were changed appropriately. Polymer 5 to Polymer 7 are resins having repeating units represented by the following formulas, respectively. The structure of each repeating unit is: １ The molecular weights were determined from H-NMR spectra. In the structures below, the subscripts in parentheses indicate the molar ratio of each structure. The weight-average molecular weight, number-average molecular weight, and imidization ratio of these resins are shown in the table below.

[0332]

[0333] Synthesis Example: Synthesis of Polymer 3 10.4 g (47.6 mmol) of pyromellitic anhydride, 10.6 g (20.4 mmol) of 4,4'-(4,4'-isopropylidenediphenoxy)bis(phthalic anhydride), 17.8 g (137 mmol) of 2-hydroxyethyl methacrylate, 0.05 g of hydroquinone, 22.8 g (289 mmol) of pyridine, and 75 g of diglyme were mixed and stirred at a temperature of 60°C for 5 hours to produce a diester of pyromellitic anhydride, 4,4'-(4,4'-isopropylidenediphenoxy)bis(phthalic anhydride), and 2-hydroxyethyl methacrylate. The mixture was then cooled to -20°C, and 17.70 g (141 mmol) of thionyl chloride was added dropwise over 90 minutes. The mixture was stirred for 2 hours, resulting in a white precipitate of pyridinium hydrochloride. Next, 19.3 g (60.5 mmol) of 4,4'-diamino-2,2'-bis(trifluoromethyl)biphenyl dissolved in 100 mL of NMP (N-methyl-2-pyrrolidone) was added dropwise over 2 hours. 10.0 g (217 mmol) of ethanol was then added, and the mixture was stirred for 2 hours. The polyimide precursor was then precipitated in 4 L of water, and the water-polyimide precursor mixture was stirred at 500 rpm for 15 minutes. The polyimide precursor was collected by filtration, stirred again in 4 L of water for 30 minutes, and filtered again. The resulting polyimide precursor was then dried under reduced pressure at 45°C for 2 days to obtain a polyimide precursor (Polymer 3). The resulting polyimide precursor (polymer 3) had a weight-average molecular weight (Mw) of 25,000 and a number-average molecular weight (Mn) of 10,000. The polyimide precursor (polymer 3) is presumed to have a structure containing two repeating units represented by the following formula (polymer 3). The subscripts in parentheses of the following repeating units represent the molar ratio of each repeating unit. The weight-average molecular weight of polymer 3 was 25,000, the number-average molecular weight was 10,000, and the imidization rate was less than 5%.

[0334] Synthesis Example: Synthesis of Polymer 4 7.43 g (34.0 mmol) of pyromellitic anhydride, 17.7 g (34.0 mmol) of 4,4'-(4,4'-isopropylidenediphenoxy)bis(phthalic anhydride), 17.8 g (137 mmol) of 2-hydroxyethyl methacrylate, 0.05 g of hydroquinone, 22.8 g (289 mmol) of pyridine, and 75 g of diglyme were mixed and stirred at a temperature of 60°C for 5 hours to produce a diester of pyromellitic anhydride, 4,4'-(4,4'-isopropylidenediphenoxy)bis(phthalic anhydride), and 2-hydroxyethyl methacrylate. The mixture was then cooled to -20°C, and 17.70 g (141 mmol) of thionyl chloride was added dropwise over 90 minutes. The mixture was stirred for 2 hours, resulting in a white precipitate of pyridinium hydrochloride. Next, 12.7 g (59.8 mmol) of 2,2'-dimethylbenzidine dissolved in 100 mL of NMP (N-methyl-2-pyrrolidone) was added dropwise over 2 hours. 10.0 g (217 mmol) of ethanol was then added, and the mixture was stirred for 2 hours. The polyimide precursor was then precipitated in 4 L of water, and the water-polyimide precursor mixture was stirred at 500 rpm for 15 minutes. The polyimide precursor was collected by filtration, stirred again in 4 L of water for 30 minutes, and filtered again. The resulting polyimide precursor was then dried under reduced pressure at 45°C for 2 days to obtain a polyimide precursor (Polymer 4). The resulting polyimide precursor (polymer 4) had a weight-average molecular weight (Mw) of 25,000 and a number-average molecular weight (Mn) of 9,950. The polyimide precursor (polymer 4) is presumed to have a structure containing two repeating units represented by the following formula (polymer 4): The subscripts in parentheses of the following repeating units indicate the molar ratio of each repeating unit. Polymer 4 had a weight-average molecular weight of 25,000, a number-average molecular weight of 9,950, and an imidization rate of less than 5%.

[0335] [Synthesis Example: Synthesis of Polymer 8] 23.5 g (75.7 mmol) of 4,4'-oxydiphthalic dianhydride (ODPA) and 22.3 g (75.7 mmol) of bisphthalic dianhydride (BPDA) were placed in a separable flask, and 39.7 g of 2-hydroxyethyl methacrylate (HEMA) and 136.8 g of tetrahydrofuran were added and stirred at room temperature (25°C). 24.7 g of pyridine was added with stirring to obtain a reaction mixture. After the heat generated by the reaction had ceased, the mixture was allowed to cool to room temperature and left to stand for 16 hours. Next, under ice cooling, a solution of 62.5 g of dicyclohexylcarbodiimide (DCC) dissolved in 61.6 g of tetrahydrofuran was added to the reaction mixture over 40 minutes with stirring, followed by 27.6 g (137.8 mmol) of 4,4'-diaminodiphenyl ether (DADPE) suspended in 119.7 g of tetrahydrofuran, which was then added over 60 minutes with stirring. After further stirring at room temperature for 2 hours, 7.17 g of ethanol was added and stirred for 1 hour, followed by the addition of 136.8 g of tetrahydrofuran. The precipitate formed in the reaction mixture was removed by filtration to obtain a reaction solution. The resulting reaction solution was added to 716.2 g of ethanol to produce a precipitate consisting of a crude polymer. The resulting crude polymer was filtered off and dissolved in 403.5 g of tetrahydrofuran to obtain a crude polymer solution. The resulting crude polymer solution was added dropwise to 8470 g of water to precipitate the polymer, and the resulting precipitate was filtered off. The resulting polyimide precursor was then dried under reduced pressure at 45°C for 2 days to obtain a polyimide precursor (polymer 8). The resulting polyimide precursor (polymer 8) had a weight average molecular weight (Mw) of 25,300 and a number average molecular weight (Mn) of 10,150. The polyimide precursor (polymer 8) is presumed to have a structure containing two repeating units represented by the following formula (polymer 8). The subscripts in parentheses of the following repeating units represent the molar ratio of each repeating unit. The weight average molecular weight of polymer 8 was 25,000, the number average molecular weight was 10,150, and the imidization rate was 20%.

[0336] [Synthesis Example: Synthesis of Polymers 9 to 16] Polymers 9 to 15 were synthesized in the same manner as for Polymer 3, except that the raw materials used were changed appropriately. Polymers 9 to 15 are resins having repeating units represented by the following formulas, respectively. The structure of each repeating unit is: １ The molecular weights were determined from H-NMR spectra. In the structures below, the subscripts in parentheses indicate the molar ratio of each structure. The weight-average molecular weight, number-average molecular weight, and imidization ratio of these resins are shown in the table below.

[0337]

[0338] Examples and Comparative Examples In each example, the components shown in the table below were mixed to obtain a negative-type photosensitive resin composition. Specifically, the content of each component shown in the table was the amount (parts by mass) shown in the "Parts by mass" column of each column in the table. The obtained negative-type photosensitive resin composition was pressure-filtered using a polypropylene filter with a pore width of 0.45 μm. In addition, in the table, "-" indicates that the composition did not contain the corresponding component.

[0339]

[0340]

[0341]

[0342]

[0343] Details of each component listed in the table are as follows:

[0344] [Polymers (resins)] Polymers 1 to 16: Polymers 1 to 16 synthesized above

[0345] [Polymerizable compounds] Polymerizable compound 1: Compound having the following structure Polymerizable compound 2: Compound having the following structure (in the following structures, the numbers represent the molar ratio of each structure contained) Polymerizable compounds 3 to 8: Compounds having the following structures

[0346] [Polymerization initiators] Polymerization initiators 1 to 4: compounds having the following structures Polymerization initiator 5: benzoyl peroxide (manufactured by Tokyo Chemical Industry Co., Ltd.)

[0347] [Migration inhibitors] Migration inhibitors 1 to 6: compounds having the following structures

[0348] [Metal Adhesion Improvers] Metal Adhesion Improvers 1 to 3: Compounds having the following structures

[0349] [Light absorber] Light absorber 1: Compound having the following structure Light absorber 2: 1 to 2: Ester of 2,2',3,3'-tetrahydro-3,3,3',3'-tetramethyl-1,1'-spirobi(1H-indene)-5,5',6,6',7,7'hexanol and 1,2-naphthoquinone-(2)-diazo-5-sulfonic acid (NQD (naphthoquinonediazide))

[0350] [Organotitanium Compounds] Organotitanium Compound 1: Compound having the following structure Organotitanium Compound 2: TC-750 (manufactured by Matsumoto Fine Chemical Co., Ltd.)

[0351] [Polymerization inhibitors] Polymerization inhibitors 1 to 4: compounds having the following structures

[0352] [Base Generator] Base Generators 1 to 3: Compounds having the following structures

[0353] [Solvents] Solvent 1: GBL (γ-butyrolactone) Solvent 2: NMP (N-methyl-2-pyrrolidone) Solvent 3: DMSO (dimethyl sulfoxide) Solvent 4: EL (ethyl lactate) Solvent 5: γ-valerolactone Solvent 6: 3-methoxy-N,N-dimethylpropanamide Solvent 7: Anisole

[0354] [Surfactant] Surfactant 1: BYK-333 (manufactured by BYK Corporation)

[0355] <Evaluation> [Taper Angle Measurement] In each example, the composition was applied by spin coating and dried at 100°C for 5 minutes to form a uniform resin composition layer with a thickness of 5 μm on a silicon wafer. In each comparative example, a uniform resin composition layer was formed in the same manner as in the example, except that the same composition as in Example 14 was used. The resin composition layer on the silicon wafer was exposed using an i-line stepper (Canon: FPR-3000i5) with the numerical aperture (Na) listed in the "Exposure Na" column, the exposure illuminance listed in the "Exposure Illuminance" column, and the exposure amount listed in the "Exposure Amount" column of the table below, through a mask having a circular mask portion with a diameter of 5 μm. The resulting film was then developed for 15 seconds using cyclopentanone as a developer and rinsed for 30 seconds using PGMEA as a rinse solution, yielding a precursor pattern of an insulating pattern. The film was then heated at 230°C for 3 hours in a nitrogen atmosphere to obtain an insulating pattern. A 50 nm thick Ti layer was formed as a conductive layer in the regions between the insulating patterns and on top of the insulating patterns by sputtering, and a 200 nm thick Cu layer was then formed on top of the Ti layer by plating. A 2500 nm thick Cu layer (conductive layer) was then formed on the Cu layer by plating. The conductive layer was polished using a CMP (Chemical Mechanical Polishing) tool manufactured by Fujikoshi Machinery Co., Ltd., using silica as a slurry for 2.5 minutes at a polishing pressure of 3 psi, exposing the insulating patterns on the surface, the Ti layer formed as a seed layer, and the conductive pattern (via pattern) formed in the region between the insulating patterns. In this specification, 1 psi is 6.895 kPa. In each example and comparative example, the insulating pattern and the conductive pattern were cut at a plane including the center of the conductive pattern, and the cross section was polished using a milling device ArBlade 5000 (manufactured by Hitachi, Ltd.). After that, an SEM image was taken using an FE-SEM SU-4800 (manufactured by Hitachi, Ltd.), and the angle (taper angle) formed between the bottom surface of the insulating pattern and the side surface of the insulating pattern was measured. The measurement results are shown in the column "Via taper angle (degrees)".

[0356] [uHAST Test (Unsaturated Vapor Pressurization Test)] The composition prepared in each Example was applied by spin coating to the exposed surface of a substrate containing one semiconductor die and an encapsulant, and dried at 100°C for 5 minutes to form a uniform resin composition layer with a thickness of 5 μm. In each Comparative Example, a uniform resin composition layer was formed in the same manner as in the Examples, except that the same composition as in Example 14 was used. Next, an i-line stepper (Canon: FPR-3000i5) was used to form the resin composition at an exposure NA of 0.16 and an exposure illuminance of 10,000 W / m ２ , exposure dose 400 mj / cm ２A flat insulating film was formed on a silicon wafer by performing a full-surface exposure with 1000 W at 1000 W, followed by development, rinsing, and heat treatment in the same manner as in the taper angle measurement described above, except that the exposure was full-surface exposure. An insulating pattern and a conductive pattern were then formed on the insulating film in the same manner as in the taper angle measurement described above. Each composition was then applied again, followed by full-surface exposure, development, rinsing, and heat treatment to form a laminate for use in reliability testing. A schematic cross-sectional view of the formed laminate is shown in FIG. 8. In FIG. 8, a first insulating film 202 is formed on the surface of a substrate 200 containing a semiconductor die and an encapsulant, on which the semiconductor die is exposed. An insulating layer 208 including wiring with an insulating pattern 204 and a conductive pattern 206 is formed on the surface of the substrate 200 containing a semiconductor die and an encapsulant, opposite the surface on which the semiconductor die is exposed. A second insulating layer 210 is further formed on the insulating layer 208 including wiring, opposite the first insulating layer 202. The resulting laminate was then subjected to 130°C and 85% relative humidity conditions for 198, 396, and 594 hours, after which the cross-section of the wiring portion was observed using a scanning electron microscope (SEM) to check for the presence or absence of abnormalities such as cracks, peeling, and voids. Evaluation was performed according to the following evaluation criteria, and the evaluation results are listed in the "uHAST Test" column in the table. -Evaluation Criteria- A: After 594 hours, the cross-section of the wiring was observed using SEM, and no abnormalities such as cracks, peeling, or voids were observed. B: After 594 hours, the cross-section of the wiring was observed using SEM, and abnormalities such as cracks, peeling, and voids were observed. However, after 396 hours, the cross-section of the wiring was observed using SEM, and no abnormalities such as cracks, peeling, or voids were observed. C: After 396 hours, the cross-section of the wiring was observed using SEM, and abnormalities such as cracks, peeling, and voids were observed. However, after 198 hours, the cross-section of the wiring was observed using SEM, and no abnormalities such as cracks, peeling, or voids were observed.

[0357] [HTS Test (High-Temperature Storage Test)] A laminate similar to the laminate used in the uHAST test was subjected to 150°C testing for 500, 1000, and 1500 hours. The cross section of the wiring was observed with a scanning electron microscope (SEM) to check for cracks, peeling, voids, and other abnormalities. Evaluation was performed according to the following evaluation criteria, and the evaluation results are shown in the "HTS Test" column in the table. -Evaluation Criteria- A: After 1500 hours, SEM observation of the wiring cross section revealed no cracks, peeling, voids, or other abnormalities. B: After 1500 hours, SEM observation of the wiring cross section revealed cracks, peeling, voids, and other abnormalities, but after 1000 hours, SEM observation of the wiring cross section revealed no cracks, peeling, voids, or other abnormalities. C: After 1000 hours, the cross section of the wiring was observed with an SEM and abnormalities such as cracks, peeling, and voids were found, but after 500 hours, the cross section of the wiring was observed with an SEM and no abnormalities such as cracks, peeling, and voids were found.

[0358] [Thermocycle Test] A laminate similar to the laminate used in the uHAST test was subjected to a temperature cycle test from -40°C to 125°C using a heat shock tester (Cosmopia S) (manufactured by Hitachi Global Life Solutions, Inc.). At 750 cycles, 1500 cycles, and 2250 cycles, the cross section of the wiring was observed using a scanning electron microscope (SEM) to check for abnormalities such as cracks, peeling, and voids. Evaluation was performed according to the following evaluation criteria, and the evaluation results are listed in the "Thermocycle Test" column in the table. -Evaluation Criteria- A: After 2250 cycles, the cross section of the wiring was observed using SEM, and no abnormalities such as cracks, peeling, or voids were observed. B: After 2250 cycles, the cross section of the wiring was observed using SEM, and abnormalities such as cracks, peeling, and voids were observed, but after 1500 cycles, the cross section of the wiring was observed using SEM, and no abnormalities such as cracks, peeling, or voids were observed. C: After 1500 cycles, SEM observation of the cross section of the wiring revealed abnormalities such as cracks, peeling, and voids, but after 750 cycles, SEM observation of the cross section of the wiring revealed no abnormalities such as cracks, peeling, or voids.

[0359]

[0360]

[0361] Example 101 A semiconductor package was produced under the same conditions as in Example 1, except that the number of semiconductor dies in the semiconductor package of Example 1 was changed from one to two. The evaluation results were all the same as in Example 1.

[0362] From the above results, it can be seen that the semiconductor package of the present invention shows good results in all of the uHAST test, HTS test, and thermocycling test. The invention according to Comparative Example 1 has a taper angle of less than 70°. This embodiment shows that the results are inferior in the HTS test and thermocycling test. The invention according to Comparative Example 2 has a taper angle of more than 110°. This embodiment shows that the results are inferior in the uHAST test and HTS test.

[0363] 10 Redistribution layer A 12 Insulating pattern A 14 Conductive pattern A 16 Conductive pad 18 Exposed portion 20 Semiconductor package 22 Sealing layer 24 Conductive connection portion 26 Substrate 28 Semiconductor die 30 Sealing material 32 Electrode 34 Other conductive connection portion 36 Conductive through via 38 Other semiconductor die 40 Other conductive pad 42 Other conductive connection portion 44 Insulating layer 46 Layer formed from curable resin composition 62 Carrier wafer 64 Second carrier wafer 102 Conductive connection portion 104 Conductive pad 106 Insulating pattern A in the outermost layer of redistribution layer A 108 Conductive pattern A in the outermost layer of redistribution layer A 110 Solder member 112 Pillar 200 Substrate including semiconductor die and sealing material 202 First insulating film 204 Insulating pattern 206 Conductive pattern 208 Insulating layer including wiring 210 Second insulating layer

Claims

1. A semiconductor package comprising: an encapsulating layer including at least one semiconductor die and an encapsulant; a redistribution layer A contacting at least one of the semiconductor dies and connecting to a circuit of the semiconductor die; a conductive connection portion connecting to the redistribution layer A; and a substrate connecting to the conductive connection portion, wherein the redistribution layer A is formed by stacking layers including an insulating pattern A and a conductive pattern A present between patterns of the insulating pattern A, the insulating pattern A having a via structure, and an angle between a side surface of the via structure and a bottom surface of the insulating pattern A being 70 to 110°.

2. The semiconductor package of claim 1, wherein the encapsulation layer is an encapsulation layer including two or more semiconductor dies and an encapsulant, and circuits in two or more of the two or more semiconductor dies are connected to the redistribution layer A.

3. The semiconductor package of claim 1, further comprising one or more semiconductor dies present outside said encapsulation layer and connected to said redistribution layer A.

4. The semiconductor package according to claim 1, wherein the rewiring layer A comprises a laminated structure of four or more layers.

5. The semiconductor package according to any one of claims 1 to 3, wherein the wiring in the rewiring layer A includes a line pattern, and the minimum line width of the line pattern is 0.1 to 10 μm.

6. The semiconductor package according to any one of claims 1 to 3, wherein the insulating pattern A contains a resin having a repeating unit represented by the following formula (1-1): In formula (1-1), X １ represents an organic group having 4 or more carbon atoms; Y １ represents an organic group having 4 or more carbon atoms.

7. X in formula (1-1) １ and Y １ Each of the following formulas (V-1) to (V-4) is independently an organic group having a structure in which two or more hydrogen atoms have been removed from the structure: In formula (V-2), R Ｘ１ Each of R independently represents a hydrogen atom, an alkyl group, or a halogenated alkyl group. Ｘ２ and R Ｘ３ each independently represents a hydrogen atom or a substituent; R Ｘ２ and R Ｘ３ may be linked to form a ring structure.

8. A method for manufacturing a semiconductor package, comprising: an encapsulating layer forming step of embedding a semiconductor die in an encapsulating material to form an encapsulating layer having one surface on which the circuit of the semiconductor die is exposed and the other surface on which the circuit of the semiconductor die is not exposed; a rewiring layer A forming step of forming a rewiring layer A by stacking a layer including an insulating pattern A and a conductive pattern A present between the patterns of the insulating pattern A on the surface of the encapsulating layer on which the circuit is exposed; a connection part forming step of forming a conductive connection part on a surface of the rewiring layer A different from the surface that contacts the encapsulating layer; and a step of connecting the connection part to a substrate, wherein the rewiring layer A forming step includes forming a via structure using the insulating pattern A, and an angle between a side surface of the via structure and a bottom surface of the insulating pattern A is 70 to 110 degrees.

9. The method for manufacturing a semiconductor package according to claim 8, wherein the insulating pattern A is formed using a negative type photosensitive resin composition.

10. The method for producing a semiconductor package according to claim 9, wherein the negative photosensitive resin composition contains a resin having at least one repeating unit selected from the repeating units represented by the following formula (4-1) and the repeating units represented by the following formula (4-2). In formula (4-1), X １ is a tetravalent organic group, Y １ is a divalent organic group, R １ and R ２ each independently represents a hydrogen atom or a monovalent organic group. In formula (4-2), X １ represents an organic group having 4 or more carbon atoms; Y １ represents an organic group having 4 or more carbon atoms; R １ each independently represents a structure containing a polymerizable group; n and m each independently represent an integer of 0 to 4.

11. X in the formula (4-1) １ and Y １ are each independently an organic group containing a structure in which two or more hydrogen atoms have been removed from a structure represented by any one of the following formulas (V-1) to (V-4), and X in the formula (4-2) １ and Y １ The method for producing a semiconductor package according to claim 10, wherein each of the following structures represented by any one of formulas (V-1) to (V-4) is an organic group having a structure in which two or more hydrogen atoms have been removed: In formula (V-2), R Ｘ１ Each of R independently represents a hydrogen atom, an alkyl group, or a halogenated alkyl group. Ｘ２ and R Ｘ３ each independently represents a hydrogen atom or a substituent; R Ｘ２ and R Ｘ３ may be linked to form a ring structure.

12. The method for producing a semiconductor package according to any one of claims 9 to 11, wherein the negative photosensitive resin composition contains an oxime initiator.

13. The method for producing a semiconductor package according to any one of claims 9 to 11, wherein the negative photosensitive resin composition contains a polymerizable compound having two or more ethylenically unsaturated bonds.

14. The method for manufacturing a semiconductor package according to any one of claims 9 to 11, wherein in the rewiring layer A formation process, a photosensitive film formed from the negative photosensitive resin composition is exposed to light using an i-line stepper.

15. The method for manufacturing a semiconductor package according to claim 14, wherein the numerical aperture of the i-line stepper is 0.10 to 0.

60.

16. The exposure illuminance of the i-line stepper is 500 to 50,000 W / m ２ The method for manufacturing a semiconductor package according to claim 14 , 17. The exposure dose by the i-line stepper is 1 to 2000 mJ / cm ２ The method for manufacturing a semiconductor package according to claim 14 , 18. The method for manufacturing a semiconductor package according to any one of claims 8 to 11, wherein the formation of the via structure is carried out by development using a solvent as a developer.

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