Display device

Abstract

A bend section (B) is provided with a resin filling film (8) so as to fill a first slit (Sa) formed in an inorganic insulating film of a TFT layer. A plurality of routing wires (18j) are provided on the resin filling film (8). A protective resin film (19d) is provided so as to cover the routing wires (18j). First, second, and third inorganic interlayer films (51a, 53a, 55a) of a touch panel layer are provided with a second slit (Sb) such that the surface of the protective resin film (19d) is exposed at the bend section (B). In the second slit (Sb), an end surface of the first inorganic interlayer film (51a) protrudes beyond an end surface of the second inorganic interlayer film (53a).

Description

display device

[0001] The present invention relates to a display device.

[0002] In recent years, self-luminous organic electroluminescence (EL) display devices using organic electroluminescence (hereinafter also referred to as "EL") elements have been attracting attention as a display device alternative to liquid crystal display devices. For these organic EL display devices, flexible organic EL display devices have been proposed, in which organic EL elements and the like are formed on a flexible resin substrate. Here, organic EL display devices have a frame area surrounding a rectangular display area where images are displayed, and there is a demand for reducing this frame area. For flexible organic EL display devices, it has been proposed to reduce the frame area by, for example, bending the frame area on the terminal side where multiple terminals are arranged.

[0003] For example, Patent Document 1 discloses a display device in which an undercoat layer made of an inorganic insulating film, a gate insulating film, and an interlayer insulating film are removed in the folding region of the non-display region corresponding to the frame region, and routing wiring is provided.

[0004] International Publication No. 2020 / 189047

[0005] Incidentally, in flexible organic EL display devices, similar to Patent Document 1, a structure has been proposed in which, in order to prevent breakage of multiple wiring lines arranged in the frame region, the inorganic insulating film is removed from the bent portion of the frame region, a resin-filled film is formed in the removed portion, wiring lines are formed on the resin-filled film, and a resin protective film is formed on the wiring lines.

[0006] In addition, for flexible organic EL display devices, a structure has been proposed in which a touch panel layer that functions as, for example, a capacitive touch panel is provided on a sealing film that seals the organic EL elements, thereby forming an on-cell touch panel. Here, the touch panel layer is formed by sequentially stacking, for example, a first inorganic interlayer film, a first wiring layer, a second inorganic interlayer film, a second wiring layer, and a third inorganic interlayer film. Therefore, at the folding portion (folding portion) of the frame region, it is necessary to remove the first inorganic interlayer film, the second inorganic interlayer film, and the third inorganic interlayer film on the resin protective film. However, at the end surfaces where the first inorganic interlayer film, the second inorganic interlayer film, and the third inorganic interlayer film have been removed, there is a risk of peeling of the inorganic interlayer films constituting the touch panel layer due to a decrease in adhesion between the resin protective film and the first inorganic interlayer film. The decrease in adhesion between the resin protective film and the first inorganic interlayer film is thought to be caused by the surface of the resin protective film being coated or damaged during processes such as forming an organic EL element and forming a sealing film after the resin protective film is formed. Furthermore, the first inorganic interlayer film, the second inorganic interlayer film, and the third inorganic interlayer film are simultaneously patterned by etching in a state in which the adhesion between the resin protective film and the first inorganic interlayer film is decreased, and therefore, the stress applied to the end face portions from which the first inorganic interlayer film, the second inorganic interlayer film, and the third inorganic interlayer film are removed is released, which is thought to cause film peeling.

[0007] The present invention has been made in view of the above points, and an object of the present invention is to suppress film peeling at the end faces of the inorganic interlayer film that constitutes the touch panel layer at the bent portion.

[0008] In order to achieve the above object, a display device according to the present invention includes a resin substrate, a thin film transistor layer provided on the resin substrate and including an inorganic insulating film, a metal layer, and a planarization film stacked in this order, a light emitting element layer provided on the thin film transistor layer and including an array of light emitting elements corresponding to a plurality of sub-pixels constituting a display area, a sealing film provided on the light emitting element layer, and a touch panel layer provided on the sealing film and including a first inorganic interlayer film, a first wiring layer, a second inorganic interlayer film, a second wiring layer, and a third inorganic interlayer film stacked in this order, wherein a frame region is provided around the display area, terminal portions are provided at edges of the frame region, and bent portions are provided between the display area and the terminal portions so as to extend in one direction, and the inorganic insulating film has, at the bent portions, a metal layer that extends in a direction in which the bent portions extend and is formed on the resin substrate. a first slit is provided in the bending portion so as to expose the surface of the plate; a resin-filled film is provided in the bending portion so as to fill the first slit; a plurality of routing wirings formed in the same layer and made of the same material as the metal layer are provided on the resin-filled film so as to extend parallel to each other in a direction intersecting the extension direction of the bending portion; a resin protective film formed in the same layer and made of the same material as the planarization film is provided so as to cover each of the routing wirings; and a second slit is provided in the first inorganic interlayer film, the second inorganic interlayer film, and the third inorganic interlayer film at the bending portion so as to extend along the extension direction of the bending portion and expose the surface of the resin protective film, wherein, at the second slit, an end face of the first inorganic interlayer film protrudes more than an end face of the second inorganic interlayer film.

[0009] According to the present invention, peeling of the inorganic interlayer film constituting the touch panel layer at the end face can be suppressed at the bent portion.

[0010] FIG. 1 is a plan view showing a schematic configuration of an organic EL display device according to a first embodiment of the present invention. FIG. 2 is a plan view of a display region of the organic EL display device according to the first embodiment of the present invention. FIG. 3 is a cross-sectional view of the organic EL display device taken along line III-III in FIG. 1. FIG. 4 is a plan view of a touch panel layer constituting the organic EL display device according to the first embodiment of the present invention. FIG. 5 is an enlarged plan view of the area surrounded by the dashed dotted line in FIG. 4. FIG. 6 is an equivalent circuit diagram of a thin-film transistor layer constituting the organic EL display device according to the first embodiment of the present invention. FIG. 7 is a cross-sectional view of an organic EL layer constituting the organic EL display device according to the first embodiment of the present invention. FIG. 8 is a cross-sectional view of the frame region of the organic EL display device taken along line VIII-VIII in FIG. 1. FIG. 9 is a cross-sectional view of the frame region of the organic EL display device taken along line IX-IX in FIG. 1. FIG. 10 is a plan view showing the end of a second inorganic interlayer film and a conductive layer in a second slit provided in a bent portion of the frame region of the organic EL display device according to the first embodiment of the present invention. FIG. 11 is a cross-sectional view showing a part of a process of forming a second slit in a bent portion of the frame region of the organic EL display device according to the first embodiment of the present invention. 12 is a cross-sectional view showing a part of the process of forming the second slits subsequent to FIG. 11 . FIG. 13 is a cross-sectional view showing a part of the process of forming the second slits subsequent to FIG. 12 . FIG. 14 is a cross-sectional view showing a part of the process of forming the second slits subsequent to FIG. 13 . FIG. 15 is a cross-sectional view showing a part of the process of forming the second slits subsequent to FIG. 14 . FIG. 16 is a cross-sectional view showing a part of the process of forming the second slits subsequent to FIG. 15 . FIG. 17 is a cross-sectional view of the frame region of an organic EL display device according to a second embodiment of the present invention, and corresponds to FIG. 9 . FIG. 18 is a plan view showing the ends of the first inorganic interlayer film and the second inorganic interlayer film and each conductive layer in the second slit provided in the bending portion of the frame region of the organic EL display device according to the second embodiment of the present invention. FIG. 19 is a plan view showing the ends of the first inorganic interlayer film and the second inorganic interlayer film and each conductive layer in the second slit provided in the bending portion of the frame region of a first modified example of the organic EL display device according to the second embodiment of the present invention.Fig. 20 is a plan view showing the ends of the first and second inorganic interlayer films and the respective conductive layers in a second slit provided in a folding portion of the frame region of a second modified example of the organic EL display device according to the second embodiment of the present invention. Fig. 21 is a plan view showing the ends of the first and second inorganic interlayer films and the respective conductive layers in a second slit provided in a folding portion of the frame region of a third modified example of the organic EL display device according to the second embodiment of the present invention. Fig. 22 is a plan view showing the ends of the first and second inorganic interlayer films and the respective conductive layers in a second slit provided in a folding portion of the frame region of a fourth modified example of the organic EL display device according to the second embodiment of the present invention.

[0011] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the following embodiments.

[0012] First Embodiment FIGS. 1 to 16 illustrate a first embodiment of a display device according to the present invention. In the following embodiments, an organic EL display device including organic EL elements will be exemplified as a display device including light-emitting elements. FIG. 1 is a plan view showing a schematic configuration of an organic EL display device 70a according to this embodiment. FIG. 2 is a plan view of a display region D of the organic EL display device 70a. The touch panel layer provided in the display region D is omitted from the plan views of FIGS. 1 and 2. FIG. 3 is a cross-sectional view of the organic EL display device 70a taken along line III-III in FIG. 1. FIG. 4 is a plan view of a touch panel layer 60 constituting the organic EL display device 70a. FIG. 5 is an enlarged plan view of the region surrounded by a dashed line in FIG. 4. FIG. 6 is an equivalent circuit diagram of a thin-film transistor layer 30a constituting the organic EL display device 70a. FIG. 7 is a cross-sectional view of an organic EL layer 33 constituting the organic EL display device 70a. 8 and 9 are cross-sectional views of the frame region F of the organic EL display device 70a taken along lines VIII-VIII and IX-IX in Fig. 1. Fig. 10 is a plan view showing the end of the second inorganic interlayer film 53a and the conductive layer 52b in the second slit Sb provided in the bending portion B of the frame region F of the organic EL display device 70a. In the plan view of Fig. 10, the third inorganic interlayer film 55a is omitted in order to show the end of the second inorganic interlayer film 53a and the conductive layer 52b.

[0013] 1, the organic EL display device 70a includes, for example, a rectangular display area D for displaying an image, and a frame area F provided in the shape of a rectangular frame around the display area D. Note that, although the rectangular display area D is exemplified in this embodiment, this rectangular shape also includes, for example, a substantially rectangular shape with arc-shaped sides, arc-shaped corners, or a shape with a notch in one of the sides.

[0014] In the display region D, a plurality of sub-pixels P are arranged in a matrix as shown in Fig. 2. In the display region D, for example, a sub-pixel P having a red light-emitting region Er for displaying red, a sub-pixel P having a green light-emitting region Eg for displaying green, and a sub-pixel P having a blue light-emitting region Eb for displaying blue are provided adjacent to each other as shown in Fig. 2. In the display region D, one pixel is configured by, for example, three adjacent sub-pixels P having the red light-emitting region Er, the green light-emitting region Eg, and the blue light-emitting region Eb.

[0015] A terminal portion T is provided at the end of the frame region F on the positive side in the X direction in FIG. 1 so as to extend in one direction (the Y direction in FIG. 1). Also, in the frame region F, as shown in FIG. 1, a bending portion B is provided between the display region D and the terminal portion T so as to extend in one direction (the Y direction in FIG. 1), which can be bent, for example, 180° (in a U-shape) with the Y direction in FIG. 1 as the bending axis. Also, as shown in FIG. 1, a plurality of terminals 18t are arranged in the terminal portion T along the direction in which the terminal portion T extends (the Y direction in FIG. 1). Also, in the frame region F, a planarization film 19a (described later) is provided with a trench G having a substantially C-shape in plan view so as to penetrate the planarization film 19a, as shown in FIG. 1. Here, the trench G is provided in a substantially C-shape in plan view so as to open on the terminal portion T side.

[0016] As shown in FIGS. 3, 8, and 9, the organic EL display device 70a includes a resin substrate 10, a thin film transistor (hereinafter also referred to as "TFT") layer 30a provided on the resin substrate 10, an organic EL element layer 40 provided as a light-emitting element layer on the TFT layer 30a, a sealing film 45 provided on the organic EL element layer 40, and a touch panel layer 60 provided on the sealing film 45.

[0017] The resin substrate 10 is made of, for example, polyimide resin.

[0018] As shown in FIG. 3 , the TFT layer 30a includes a base coat film 11 provided on a resin substrate 10, a plurality of first TFTs 9a, a plurality of second TFTs 9b, and a plurality of capacitors 9c provided on the base coat film 11, and a planarization film 19a provided on each of the first TFTs 9a, each of the second TFTs 9b, and each of the capacitors 9c. As shown in FIG. 2 , the TFT layer 30a includes a plurality of gate lines 14g extending parallel to each other in the X direction. As shown in FIG. 2 , the TFT layer 30a also includes a plurality of source lines 18f formed as metal layers extending parallel to each other in the Y direction. As shown in FIG. 2 , the TFT layer 30a also includes a plurality of power supply lines 18g formed as metal layers extending parallel to each other in the Y direction. Each power supply line 18g is adjacent to each of the source lines 18f. 6, the TFT layer 30a includes a first TFT 9a, a second TFT 9b, and a capacitor 9c for each sub-pixel P. In the TFT layer 30a, as shown in FIG. 3, inorganic insulating films (base coat film 11, gate insulating film 13, first interlayer insulating film 15, second interlayer insulating film 17), metal layers (source lines 18f, power supply lines 18g, etc.), and a planarization film 19a are stacked in this order on a resin substrate 10.

[0019] As shown in FIG. 6 , the first TFT 9a is electrically connected to the corresponding gate line 14g and source line 18f in each subpixel P. As shown in FIG. 3 , the first TFT 9a includes a semiconductor layer 12a, a gate insulating film 13, a gate electrode 14a, a first interlayer insulating film 15, a second interlayer insulating film 17, a source electrode 18a, and a drain electrode 18b, which are sequentially disposed on a base coat film 11. The semiconductor layer 12a is made of polysilicon, such as low-temperature polysilicon (LTPS), and is formed in an island shape on the base coat film 11 as shown in FIG. 3 . The semiconductor layer 12a has a channel region, a source region, and a drain region. As shown in FIG. 3 , the gate insulating film 13 is disposed so as to cover the semiconductor layer 12a. As shown in FIG. 3 , the gate electrode 14a is disposed on the gate insulating film 13 so as to overlap the channel region of the semiconductor layer 12a. As shown in FIG. 3 , the first interlayer insulating film 15 and the second interlayer insulating film 17 are disposed so as to cover the gate electrode 14a. 3, the source electrode 18a and the drain electrode 18b are provided as metal layers spaced apart from each other on the second interlayer insulating film 17. The source electrode 18a and the drain electrode 18b are electrically connected to the source region and the drain region of the semiconductor layer 12a, respectively, through contact holes formed in the stacked film of the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17. The base coat film 11, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17 are each provided as one of inorganic insulating films, and are composed of a single layer film or a stacked film of inorganic insulating films such as silicon nitride, silicon oxide, silicon oxynitride, etc.

[0020] As shown in FIG. 6 , the second TFT 9b is electrically connected to the corresponding first TFT 9a and power line 18g in each subpixel P. As shown in FIG. 3 , the second TFT 9b includes a semiconductor layer 12b, a gate insulating film 13, a gate electrode 14b, a first interlayer insulating film 15, a second interlayer insulating film 17, a source electrode 18c, and a drain electrode 18d, which are sequentially disposed on a base coat film 11. The semiconductor layer 12b is made of polysilicon such as LTPS and is formed in an island shape on the base coat film 11 as shown in FIG. 3 , and has a channel region, a source region, and a drain region. As shown in FIG. 3 , the gate insulating film 13 is disposed so as to cover the semiconductor layer 12b. As shown in FIG. 3 , the gate electrode 14b is disposed on the gate insulating film 13 so as to overlap the channel region of the semiconductor layer 12b. As shown in FIG. 3 , the first interlayer insulating film 15 and the second interlayer insulating film 17 are disposed so as to cover the gate electrode 14b. 3, the source electrode 18c and the drain electrode 18d are provided as metal layers spaced apart from each other on the second interlayer insulating film 17. The source electrode 18c and the drain electrode 18d are electrically connected to the source region and the drain region of the semiconductor layer 12b, respectively, through contact holes formed in the stacked film of the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17.

[0021] In this embodiment, the first TFT 9 a and the second TFT 9 b are illustrated as top-gate type, but the first TFT 9 a and the second TFT 9 b may be bottom-gate type. Also, in this embodiment, the first TFT 9 a and the second TFT 9 b are illustrated as having semiconductor layers formed of polysilicon such as LTPS, but the first TFT 9 a and the second TFT 9 b may be illustrated as having semiconductor layers formed of an oxide semiconductor such as In—Ga—Zn—O.

[0022] As shown in Fig. 6, the capacitor 9c is electrically connected to the corresponding first TFT 9a and power supply line 18g in each subpixel P. Here, as shown in Fig. 3, the capacitor 9c includes a lower conductive layer 14c formed in the same layer and made of the same material as the gate line 14g and the gate electrodes 14a and 14b, a first interlayer insulating film 15 provided to cover the lower conductive layer 14c, and an upper conductive layer 16c provided on the first interlayer insulating film 15 to overlap the lower conductive layer 14c. Note that the upper conductive layer 16c is electrically connected to the power supply line 18g via a contact hole formed in the second interlayer insulating film 17, as shown in Fig. 3.

[0023] The planarization film 19a has a flat surface in the display region D, and is made of, for example, an organic resin material such as polyimide resin or acrylic resin, or a polysiloxane-based SOG (spin on glass) material.

[0024] As shown in FIG. 3 , the organic EL element layer 40 includes a plurality of organic EL elements 35 arranged as a plurality of light-emitting elements in a matrix pattern corresponding to a plurality of sub-pixels P, and edge covers 32 a arranged in a lattice pattern common to all the sub-pixels P so as to cover the peripheral edges of the first electrodes 31 a of each organic EL element 35.

[0025] As shown in Figure 3, in each subpixel P, the organic EL element 35 includes a first electrode 31a provided on the planarization film 19a of the TFT layer 30a, an organic EL layer 33 provided on the first electrode 31a, and a second electrode 34 provided on the organic EL layer 33.

[0026] 3, the first electrode 31a is electrically connected to the drain electrode 18d of each second TFT 9b through a contact hole formed in the planarization film 19a. The first electrode 31a is provided as an anode and has a function of injecting holes (positive holes) into the organic EL layer 33. To improve the efficiency of hole injection into the organic EL layer 33, the first electrode 31a is preferably formed of a material with a large work function. Examples of materials that can be used to form the first electrode 31a include metal materials such as silver (Ag), aluminum (Al), vanadium (V), cobalt (Co), nickel (Ni), tungsten (W), gold (Au), titanium (Ti), ruthenium (Ru), manganese (Mn), indium (In), ytterbium (Yb), lithium fluoride (LiF), platinum (Pt), palladium (Pd), molybdenum (Mo), iridium (Ir), and tin (Sn). The material constituting the first electrode 31a is, for example, astatine (At) / astatine oxide (AtO ２ The first electrode 31a may be made of an alloy of tin oxide (SnO), zinc oxide (ZnO), indium tin oxide (ITO), indium zinc oxide (IZO), or another conductive oxide. The first electrode 31a may be formed by stacking multiple layers made of the above materials. Examples of compound materials with a large work function include indium tin oxide (ITO) and indium zinc oxide (IZO).

[0027] As shown in FIG. 7, the organic EL layer 33 includes a hole injection layer 1, a hole transport layer 2, a light emitting layer 3, an electron transport layer 4, and an electron injection layer 5, which are stacked in this order on the first electrode 31a.

[0028] The hole injection layer 1 is also called an anode buffer layer, and has the function of bringing the energy levels of the first electrode 31a and the organic EL layer 33 closer to each other, thereby improving the efficiency of hole injection from the first electrode 31a to the organic EL layer 33. Examples of materials that form the hole injection layer 1 include triazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives, phenylenediamine derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, and stilbene derivatives.

[0029] The hole transport layer 2 has a function of improving the efficiency of transporting holes from the first electrode 31a to the organic EL layer 33. Here, examples of materials constituting the hole transport layer 2 include porphyrin derivatives, aromatic tertiary amine compounds, styrylamine derivatives, polyvinylcarbazole, poly-p-phenylenevinylene, polysilane, triazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives, pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amine-substituted chalcone derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, stilbene derivatives, hydrogenated amorphous silicon, hydrogenated amorphous silicon carbide, zinc sulfide, and zinc selenide.

[0030] The light-emitting layer 3 is a region into which holes and electrons are injected from the first electrode 31 a and the second electrode 34, respectively, and where the holes and electrons recombine when a voltage is applied by the first electrode 31 a and the second electrode 34. Here, the light-emitting layer 3 is made of a material with high luminous efficiency. Examples of materials that can be used to form the light-emitting layer 3 include metal oxinoid compounds [8-hydroxyquinoline metal complexes], naphthalene derivatives, anthracene derivatives, diphenylethylene derivatives, vinylacetone derivatives, triphenylamine derivatives, butadiene derivatives, coumarin derivatives, benzoxazole derivatives, oxadiazole derivatives, oxazole derivatives, benzimidazole derivatives, thiadiazole derivatives, benzothiazole derivatives, styryl derivatives, styrylamine derivatives, bisstyrylbenzene derivatives, trisstyrylbenzene derivatives, perylene derivatives, perinone derivatives, aminopyrene derivatives, pyridine derivatives, rhodamine derivatives, aquidin derivatives, phenoxazone, quinacridone derivatives, rubrene, poly-p-phenylenevinylene, and polysilane.

[0031] The electron transport layer 4 has a function of efficiently transferring electrons to the light-emitting layer 3. Examples of materials constituting the electron transport layer 4 include organic compounds such as oxadiazole derivatives, triazole derivatives, benzoquinone derivatives, naphthoquinone derivatives, anthraquinone derivatives, tetracyanoanthraquinodimethane derivatives, diphenoquinone derivatives, fluorenone derivatives, silole derivatives, and metal oxinoid compounds.

[0032] The electron injection layer 5 has a function of bringing the energy levels of the second electrode 34 and the organic EL layer 33 closer to each other and improving the efficiency of electron injection from the second electrode 34 to the organic EL layer 33, and this function makes it possible to reduce the driving voltage of the organic EL element. The electron injection layer 5 is also called a cathode buffer layer. Here, examples of materials constituting the electron injection layer 5 include lithium fluoride (LiF), magnesium fluoride (MgF ２ ), calcium fluoride (CaF ２ ), strontium fluoride (SrF ２ ), barium fluoride (BaF ２inorganic alkali compounds such as aluminum oxide (Al ２ O ３ ), strontium oxide (SrO), etc.

[0033] The second electrode 34 is provided on the plurality of organic EL layers 33 so as to be common to the plurality of subpixels P, i.e., so as to cover each organic EL layer 33 and the edge cover 32a, as shown in FIG. 3 . The second electrode 34 is provided as a cathode and has the function of injecting electrons into the organic EL layer 33. The second electrode 34 is preferably made of a material with a small work function to improve the efficiency of electron injection into the organic EL layer 33. Examples of materials that can be used for the second electrode 34 include silver (Ag), aluminum (Al), vanadium (V), calcium (Ca), titanium (Ti), yttrium (Y), sodium (Na), manganese (Mn), indium (In), magnesium (Mg), lithium (Li), ytterbium (Yb), and lithium fluoride (LiF). The second electrode 34 may be made of, for example, magnesium (Mg) / copper (Cu), magnesium (Mg) / silver (Ag), sodium (Na) / potassium (K), or astatine (At) / astatine oxide (AtO ２ The second electrode 34 may be formed of an alloy such as lithium (Li) / aluminum (Al), lithium (Li) / calcium (Ca) / aluminum (Al), or lithium fluoride (LiF) / calcium (Ca) / aluminum (Al). The second electrode 34 may be formed of a conductive oxide such as tin oxide (SnO), zinc oxide (ZnO), indium tin oxide (ITO), or indium zinc oxide (IZO). The second electrode 34 may be formed by stacking multiple layers made of the above materials. Examples of materials with a low work function include magnesium (Mg), lithium (Li), lithium fluoride (LiF), magnesium (Mg) / copper (Cu), magnesium (Mg) / silver (Ag), sodium (Na) / potassium (K), lithium (Li) / aluminum (Al), lithium (Li) / calcium (Ca) / aluminum (Al), and lithium fluoride (LiF) / calcium (Ca) / aluminum (Al).

[0034] The edge cover 32a is made of, for example, an organic resin material such as polyimide resin or acrylic resin, or a polysiloxane-based SOG material.

[0035] As shown in Figure 3, the sealing film 45 is provided to cover the second electrode 34, and comprises a first inorganic sealing film 41, an organic sealing film 42, and a second inorganic sealing film 43 stacked in order on the second electrode 34, and has the function of protecting the organic EL layer 33 of each organic EL element 35 from moisture and oxygen.

[0036] The first inorganic sealing film 41 and the second inorganic sealing film 43 are made of an inorganic insulating film such as a silicon nitride film, a silicon oxide film, or a silicon oxynitride film.

[0037] The organic sealing film 42 is made of an organic resin material such as an acrylic resin, an epoxy resin, a silicone resin, a polyurea resin, a parylene resin, a polyimide resin, or a polyamide resin.

[0038] As shown in FIG. 3, the touch panel layer 60 includes a first inorganic interlayer film 51a, a first wiring layer (connecting layer 52a), a second inorganic interlayer film 53a, a second wiring layer (first touch electrode 54a, second touch electrode 54b), and a third inorganic interlayer film 55a, which are stacked in this order on the sealing film 45, and constitutes, for example, a projected capacitive touch panel.

[0039] The first inorganic interlayer film 51a, the second inorganic interlayer film 53a, and the third inorganic interlayer film 55a are each composed of a single layer or a multilayer film of an inorganic insulating film such as silicon nitride, silicon oxide, or silicon oxynitride.

[0040] The first touch electrode 54a is provided in, for example, a diamond shape, as shown in Figures 4 and 5. The plurality of first touch electrodes 54a are provided in a matrix, as shown in Figures 4 and 5. The plurality of first touch electrodes 54a arranged in the X direction in Figure 4 are connected to each other at corners in the X direction in Figure 4 via connection layers 52a, as shown in Figures 3 and 4, and are also drawn out to the negative side in the X direction in Figure 4 and electrically connected to a predetermined terminal 18t of the terminal unit T. The portion of the display region D of the touch panel layer 60 in the cross-sectional view of Figure 3 corresponds to the portion along line A-A in Figure 5. Here, the coupling layer 52a, the first touch electrode 54a, and the second touch electrode 54b are composed of, for example, a metal single layer film of Mo, Ti, Al, Cu, W, etc., a metal laminate film of Mo (upper layer) / Al (middle layer) / Mo (lower layer), Ti / Al / Ti, Al (upper layer) / Ti (lower layer), Cu / Mo, Cu / Ti, etc., or a conductive oxide such as ITO or IZO. The coupling layer 52a, the first touch electrode 54a, and the second touch electrode 54b may have mesh-like (network-like) wiring or may be formed in the form of an electrode pad. Furthermore, if the coupling layer 52a, the first touch electrode 54a, and the second touch electrode 54b are composed of, for example, a metal laminate film of Ti / Al / Ti, there is a risk of blocking light, so it is preferable that they be formed in a mesh-like shape.

[0041] The second touch electrode 54b is provided in, for example, a diamond shape, as shown in Figures 4 and 5. The multiple second touch electrodes 54b are provided in a matrix so as not to overlap with the multiple first touch electrodes 54a, as shown in Figures 4 and 5. The multiple first touch electrodes 54a arranged in the Y direction in the figures are connected to each other at corners in the Y direction in the figures, as shown in Figure 4, and are drawn out to the positive side in the Y direction in Figure 4 (towards the bent portion B) and electrically connected to a predetermined terminal 18t of the terminal portion T.

[0042] As shown in FIG. 1, the organic EL display device 70a also includes a first dam wall Wa in the frame region F, which is provided in a frame shape outside the trench G so as to surround the display region D, and a second dam wall Wb in a frame shape around the first frame-shaped dam wall Wa.

[0043] 8, the first damming wall Wa includes a lower resin layer 19b formed in the same layer and made of the same material as the planarizing film 19a, and an upper resin layer 32c formed in the same layer and made of the same material as the edge cover 32a, provided on the lower resin layer 19b via a connection wiring 31b (described later). The connection wiring 31b is formed in the same layer and made of the same material as the first electrode 31a. The first damming wall Wa is provided so as to overlap the outer peripheral edge of the organic sealing film 42 of the sealing film 45, and is configured to suppress the spread of ink that becomes the organic sealing film 42.

[0044] As shown in Figures 8 and 9, the second dam wall Wb comprises a lower resin layer 19c formed in the same layer and made of the same material as the planarization film 19a, and an upper resin layer 32d provided on the lower resin layer 19c via connection wiring 31b and formed in the same layer and made of the same material as the edge cover 32a.

[0045] 1 , the organic EL display device 70a includes a first frame wiring 18h that extends widely in the opening of the trench G in the frame region F, with both ends on the display region D side extending linearly inside the trench G along the positive side of the display region D in the X direction in the figure, and both ends on the opposite side of the display region D extending to a terminal portion T. Here, the first frame wiring 18h is electrically connected to a power line 18g on the display region D side of the frame region F, and is configured so that a high power supply voltage (ELVDD) is input to the terminal portion T. The first frame wiring 18h, second frame wiring 18i and routing wiring 18j (described later) are formed in the same layer and made of the same material as the source electrodes 18a and 18c, the drain electrodes 18c and 18d, the source line 18f, and the power line 18g.

[0046] 1, the organic EL display device 70a also includes second frame wiring 18i that is provided in a generally C-shape outside the trench G in the frame region F and has both ends extending to the terminal portion T. Here, as shown in FIG. 8, the second frame wiring 18i is electrically connected to the second electrode 34 in the display region D via the connection wiring 31b provided in the trench G, and is configured so that a low power supply voltage (ELVSS) is input at the terminal portion T.

[0047] 3 and 8, the organic EL display device 70a includes a plurality of peripheral photo spacers 32b provided in the frame region F in the shape of islands so as to protrude upward from both edges of the trench G. Here, the peripheral photo spacers 32b are formed in the same layer as the edge cover 32a and made of the same material.

[0048] As shown in FIG. 9, the organic EL display device 70a also includes a resin filling film 8 provided at the folding portion B of the frame region F so as to fill first slits Sa formed in the base coat film 11, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17, a plurality of wiring lines 18j provided on the resin carpet film 8 and the second interlayer insulating film 17, and a resin protective film 19d provided so as to cover each wiring line 18j.

[0049] As shown in Figure 9, the first slit Sa is provided in the form of a groove that extends along the extension direction of the bending portion B and penetrates the base coat film 11, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17 to expose the surface of the resin substrate 10.

[0050] The resin filling film 8 is made of, for example, an organic resin material such as polyimide resin or acrylic resin, or a polysiloxane-based SOG material.

[0051] As shown in FIG. 10 , the multiple routing lines 18j are arranged to extend parallel to each other in a direction perpendicular to the direction in which the bent portions B extend. Here, as shown in FIG. 7 , both ends of each routing line 18j are electrically connected to the first gate conductive layer 14na and the second gate conductive layer 14nb, respectively, through contact holes formed in the stacked film of the first interlayer insulating film 15 and the second interlayer insulating film 17. The first gate conductive layer 14na is formed in the same layer and made of the same material as the gate line 14g and the gate electrodes 14a and 14b, and is electrically connected to display lines (such as the source line 18f) arranged in the display region D. The second gate conductive layer 14nb is formed in the same layer and made of the same material as the gate line 14g and the gate electrodes 14a and 14b, and is electrically connected to a predetermined terminal 18t of the terminal portion T.

[0052] The resin protective film 19d is provided in a strip shape in the folding portion B along the extending direction of the folding portion B. The resin protective film 19d is formed in the same layer as the planarizing film 19a and made of the same material.

[0053] As shown in FIG. 9, the organic EL display device 70a has second slits Sb formed in the first inorganic interlayer film 51a, the second inorganic interlayer film 53a, and the third inorganic interlayer film 55a at the bent portion B of the frame region F.

[0054] As shown in FIG. 9 , the second slit Sb is formed as a groove extending in the direction of the bent portion B, penetrating the first inorganic interlayer film 51 a, the second inorganic interlayer film 53 a, and the third inorganic interlayer film 55 a to expose the surface of the resin protective film 19 d. Here, in the second slit Sb, the end face of the first inorganic interlayer film 51 a protrudes beyond the end face of the second inorganic interlayer film 53 a, as shown in FIGS. 9 and 10 . Furthermore, in the bent portion B, a strip-shaped conductive layer 52 b formed in the same layer and made of the same material as the coupling layer 52 a is provided between the first inorganic interlayer film 51 a and the second inorganic interlayer film 53 a, as shown in FIGS. 9 and 10 . Furthermore, in the second slit Sb, the end face of the conductive layer 52 b is aligned with the end face of the first inorganic interlayer film 51 a, as shown in FIGS. 9 and 10 . In the second slit Sb, the end face of the third inorganic interlayer film 55a protrudes from the end face of the first inorganic interlayer film 51a as shown in FIG.

[0055] In the organic EL display device 70a described above, in each subpixel P, a gate signal is input to the first TFT 9a via the gate line 14g to turn the first TFT 9a on, a data signal is written to the gate electrode 14b and capacitor 9c of the second TFT 9b via the source line 18f, and a current from the power supply line 18g corresponding to the gate voltage of the second TFT 9b is supplied to the organic EL element 35, causing the light-emitting layer 3 of the organic EL element 35 to emit light, thereby displaying an image. In the organic EL display device 50a, even if the first TFT 9a is turned off, the gate voltage of the second TFT 9b is held by the capacitor 9c, so that the light-emitting layer 3 continues to emit light until a gate signal for the next frame is input. In addition, the organic EL display device 70a is configured so that when the surface of the third inorganic interlayer film 55a is touched, a position detection circuit calculates and detects the touched position based on a change in capacitance that occurs at the intersection of the first touch electrode 54a (extending in the X direction in Figure 4) and the second touch electrode 54b (extending in the Y direction in Figure 4).

[0056] Next, a method for manufacturing the organic EL display device 70a of this embodiment will be described. Figures 11, 12, 13, 14, 15, and 16 are cross-sectional views sequentially illustrating steps of forming second slits Sb in the bent portions B of the frame region F of the organic EL display device 70a. The method for manufacturing the organic EL display device 70a of this embodiment includes a TFT layer forming step, an organic EL element layer forming step, a sealing film forming step, and a touch panel layer forming step.

[0057] <TFT Layer Forming Process> First, for example, on a resin substrate 10 formed on a glass substrate, an inorganic insulating film (having a thickness of about 1000 nm) such as a silicon oxide film is formed by, for example, a plasma CVD (Chemical Vapor Deposition) method, thereby forming a base coat film 11.

[0058] Next, an amorphous silicon film (about 50 nm thick) is formed by plasma CVD on the substrate surface on which the base coat film 11 has been formed, and the amorphous silicon film is crystallized by laser annealing or the like to form a polysilicon film, which is then patterned to form the semiconductor layer 12 a (12 b).

[0059] Thereafter, an inorganic insulating film (about 100 nm) such as a silicon oxide film is formed on the surface of the substrate on which the semiconductor layer 12a (12b) is formed, for example, by plasma CVD, to form a gate insulating film 13 so as to cover the semiconductor layer 12a (12b).

[0060] Furthermore, an aluminum film (about 350 nm thick) and a molybdenum nitride film (about 50 nm thick) are formed in this order by, for example, sputtering on the surface of the substrate on which the gate insulating film 13 has been formed, and then these metal laminated films are patterned to form the gate line 14g, the gate electrode 14a (14b), the lower conductive layer 14c, the first gate conductive layer 14na, the second gate conductive layer 14nb, etc.

[0061] Subsequently, the semiconductor layer 12a (12b) is doped with impurity ions using the gate electrode 14a (14b) as a mask, thereby forming a channel region, a source region, and a drain region in the semiconductor layer 12a (12b).

[0062] Thereafter, an inorganic insulating film (with a thickness of about 100 nm) such as a silicon oxide film is formed, for example, by a plasma CVD method, on the substrate surface on which the channel region, source region, and drain region are formed in the semiconductor layer 12a (12b), thereby forming a first interlayer insulating film 15.

[0063] Furthermore, an aluminum film (thickness: about 350 nm) and a molybdenum nitride film (thickness: about 50 nm) are sequentially formed on the substrate surface on which the first interlayer insulating film 15 is formed, for example, by a sputtering method, and then these metal laminated films are patterned to form the upper conductive layer 16c.

[0064] Subsequently, an inorganic insulating film (about 500 nm thick) such as a silicon oxide film is formed by, for example, plasma CVD on the substrate surface on which the upper conductive layer 16c is formed, thereby forming a second interlayer insulating film 17.

[0065] Thereafter, the gate insulating film 13, the first interlayer insulating film 15 and the second interlayer insulating film 17 are appropriately patterned to form contact holes.

[0066] Furthermore, at the bending portion B, the stacked film of the base coat film 11, the gate insulating film 13, the first interlayer insulating film 15 and the second interlayer insulating film 17 is removed, and a first slit Sa is formed in the base coat film 11, the gate insulating film 13, the first interlayer insulating film 15 and the second interlayer insulating film 17.

[0067] Next, for example, a photosensitive polyimide resin is applied to the substrate surface on which the first slit Sa is formed, and then the applied film is pre-baked, exposed to light, developed, and post-baked to form a resin-filled film 8 that fills the first slit Sa of the bending portion B.

[0068] Thereafter, a titanium film (thickness: about 30 nm), an aluminum film (thickness: about 300 nm), and a titanium film (thickness: about 50 nm) are sequentially formed on the substrate surface on which the resin filling film 8 has been formed, for example, by a sputtering method, and then these metal laminated films are patterned to form a source line 18f, a power line 18g, source electrodes 18a and 18c, drain electrodes 18b and 18d, a first frame wiring 18h, a second frame wiring 18i, a routing wiring 18j, and the like.

[0069] Finally, a polyimide-based photosensitive resin film (about 2 μm thick) is applied to the substrate surface on which the source lines 18 f and the like are formed, for example, by spin coating or slit coating, and then the applied film is pre-baked, exposed to light, developed, and post-baked to form a planarizing film 19 a, lower resin layers 19 b and 19 c, a resin protective film 19 d (19 da), and the like.

[0070] In this manner, the TFT layer 30a can be formed.

[0071] <Organic EL Element Layer Forming Process (Light Emitting Element Layer Forming Process)> Using a well-known method, a first electrode 31a, an edge cover 32a, an organic EL layer 33 (hole injection layer 1, hole transport layer 2, organic light emitting layer 3, electron transport layer 4, electron injection layer 5), and a second electrode 34 are formed on the planarization film 19a of the TFT layer 30a formed in the TFT layer forming process, thereby forming the organic EL element layer 40. Here, when forming the edge cover 32a, for example, a polyimide-based photosensitive resin film (with a thickness of about 2 μm) is applied by spin coating or slit coating, and then the applied film is pre-baked, exposed to light, developed, and post-baked to form the edge cover 32a, and also form the peripheral photospacers 32b, the upper resin layers 32c and 32d, etc.

[0072] <Sealing film forming process> First, an inorganic insulating film such as a silicon nitride film, a silicon oxide film, or a silicon oxynitride film is formed by plasma CVD using a mask on the surface of the substrate on which the organic EL element layer 40 formed in the organic EL element layer forming process is formed, thereby forming a first inorganic sealing film 41.

[0073] Subsequently, an organic resin material such as an acrylic resin is ejected by, for example, an inkjet method onto the surface of the substrate on which the first inorganic sealing film 41 has been formed, to form an organic sealing film 42 .

[0074] Furthermore, an inorganic insulating film such as a silicon nitride film, a silicon oxide film, or a silicon oxynitride film is formed on the substrate on which the organic sealing film 42 has been formed using a mask by plasma CVD to form a second inorganic sealing film 43, thereby forming a sealing film 45.

[0075] <Touch panel layer formation process> First, an inorganic insulating film (about 100 nm) such as a silicon oxide film is formed on the substrate surface on which the sealing film 45 has been formed in the sealing film formation process, for example, by plasma CVD, to form a first inorganic interlayer film 51 on the resin protective film 19da, as shown in Figure 11.

[0076] Next, a titanium film (thickness: about 50 nm), an aluminum film (thickness: about 300 nm), and a titanium film (thickness: about 50 nm) are sequentially formed on the substrate surface on which the first inorganic interlayer film 51 has been formed, for example, by a sputtering method, to form a metal laminate film 52 as shown in FIG. 12. Thereafter, the metal laminate film 52 is patterned to form a coupling layer 52a (see FIG. 3), a conductive layer 52b, and the like as shown in FIG. 13.

[0077] Furthermore, an inorganic insulating film (about 100 nm) such as a silicon oxide film is formed by, for example, plasma CVD on the substrate surface on which the coupling layer 52a and the like are formed, to form a second inorganic interlayer film 53 as shown in Fig. 14, and then the first inorganic interlayer film 51 and the second inorganic interlayer film 53 are patterned to form a first inorganic interlayer film 51a and a second inorganic interlayer film 53a as shown in Fig. 15. At this time, the surface of the resin protective film 19da exposed from the first inorganic interlayer film 51a, the conductive layer 52b, and the second inorganic interlayer film 53a has its surface layer removed to become a resin protective film 19db.

[0078] Then, on the substrate surface on which the first inorganic interlayer film 51a and the second inorganic interlayer film 53a are formed, a metal laminate film such as a titanium film (thickness: approximately 50 nm), an aluminum film (thickness: approximately 300 nm), and a titanium film (thickness: approximately 50 nm) is formed, for example, by a sputtering method, and then the metal laminate film is patterned to form a first touch electrode 54a, a second touch electrode 54b, etc.

[0079] Furthermore, an inorganic insulating film (about 100 nm) such as a silicon oxide film is formed by, for example, plasma CVD on the substrate surface on which the first touch electrodes 54a and the like are formed, and then the inorganic insulating film is patterned to form a third inorganic interlayer film 55a as shown in Fig. 16, thereby forming the touch panel layer 60. At this time, the surface of the resin protective film 19db exposed from the third inorganic interlayer film 55a has the surface layer removed to become a resin protective film 19d.

[0080] Finally, a protective sheet (not shown) is attached to the surface of the substrate on which the touch panel layer 60 is formed, and then laser light is irradiated from the glass substrate side of the resin substrate 10 to peel the glass substrate from the underside of the resin substrate 10, and further a protective sheet (not shown) is attached to the underside of the resin substrate 10 from which the glass substrate has been peeled.

[0081] In this manner, the organic EL display device 70a of this embodiment can be manufactured.

[0082] As described above, according to the organic EL display device 70a of this embodiment, the first inorganic interlayer film 51a, the second inorganic interlayer film 53a, and the third inorganic interlayer film 55a constituting the touch panel layer 60 are provided with the second slits Sb at the folding portions B in the frame region F, the second slits Sb extending in the direction of extension of the folding portions B and exposing the surface of the resin protective film 19d. Here, in the second slits Sb, the end faces of the first inorganic interlayer film 51a protrude further than the end faces of the second inorganic interlayer film 53b. Therefore, for example, when the first inorganic interlayer film 51a, the second inorganic interlayer film 53a, and the third inorganic interlayer film 55a are simultaneously patterned so that their end faces are aligned, stress at the end portions of the inorganic interlayer films that concentrates between the resin protective film 19d and the first inorganic interlayer film 51a can be dispersed between the resin protective film 19d and the first inorganic interlayer film 51a and between the first inorganic interlayer film 51a and the second inorganic interlayer film 53a. This makes it possible to suppress film peeling between the resin protective film 19d and the first inorganic interlayer film 51a in the second slit Sb, thereby suppressing film peeling at the end faces of the first inorganic interlayer film 51a and the second inorganic interlayer film 53a that constitute the touch panel layer 60 at the bending portion B.

[0083] Furthermore, in the organic EL display device 70a of this embodiment, a conductive layer 52b is provided between the first inorganic interlayer film 51a and the second inorganic interlayer film 53a in the bending portion B, and an end face of the conductive layer 52b is aligned with an end face of the first inorganic interlayer film 51a in the second slit Sb. Therefore, the first inorganic interlayer film 51a is formed using the conductive layer 52b as a mask pattern. Here, the conductive layer 52b is formed in the same layer as the coupling layer 52a provided in the display region D and made of the same material, and therefore is formed using the photomask used to form the coupling layer 52a. This eliminates the need for a separate photomask just for forming the first inorganic interlayer film 51a, making it possible to form the first inorganic interlayer film 51a without increasing the number of photomasks.

[0084] Furthermore, in the organic EL display device 70a of this embodiment, the end face of the third inorganic interlayer film 55a protrudes beyond the end face of the first inorganic interlayer film 51a in the second slit Sb, and therefore the end face of the third inorganic interlayer film 55a is formed on the surface of the resin protective film 19d (19db), whose surface layer has been removed and cleaned when the first inorganic interlayer film 51a and the second inorganic interlayer film 53a are formed. Therefore, peeling at the end face of the third inorganic interlayer film 55a constituting the touch panel layer 60 can be suppressed at the bending portion B.

[0085] Second Embodiment Figures 17 to 22 show a second embodiment of a display device according to the present invention. Here, Figure 17 is a cross-sectional view of the frame region F of an organic EL display device 70b of this embodiment, corresponding to Figure 9 of the first embodiment. Also, Figure 18 is a plan view showing the ends of the first inorganic interlayer film 51a and the second inorganic interlayer film 53a and the respective conductive layers 52c in the second slit Sb provided in the bending portion B of the frame region F of the organic EL display device 70b. Also, Figure 19 is a plan view showing the ends of the first inorganic interlayer film 51a and the second inorganic interlayer film 53a and the respective conductive layers 52ca in the second slit Sb provided in the bending portion B of the frame region F of a first modification of the organic EL display device 70b. 20 is a plan view showing the ends of the first inorganic interlayer film 51 a and the second inorganic interlayer film 53 a and the conductive layers 52 cb in the second slit Sb provided in the bending portion B of the frame region F of a second modified example of the organic EL display device 70 b. Also, FIG. 21 is a plan view showing the ends of the first inorganic interlayer film 51 a and the second inorganic interlayer film 53 aa and the conductive layers 52 c in the second slit Sb provided in the bending portion B of the frame region F of a third modified example of the organic EL display device 70 b. Also, FIG. 22 is a plan view showing the ends of the first inorganic interlayer film 51 a and the second inorganic interlayer film 53 ab and the conductive layers 52 c in the second slit Sb provided in the bending portion B of the frame region F of a fourth modified example of the organic EL display device 70 b. 18 to 22, the third inorganic interlayer film 55a is omitted in order to show the ends of the first inorganic interlayer film 51a and the second inorganic interlayer film 53a and the conductive layer 52b. In the following embodiments, the same parts as those in FIGS. 1 to 16 are denoted by the same reference numerals, and detailed description thereof will be omitted.

[0086] In the first embodiment described above, an organic EL display device 70a in which a first inorganic interlayer film 51a is formed on a resin protective film 19d is exemplified. In the present embodiment, an organic EL display device 70b in which a first inorganic interlayer film 51a is formed on a resin protective film 19e from which at least a portion of the surface layer of the resin protective film 19d has been removed is exemplified.

[0087] The organic EL display device 70b includes a display area D for displaying an image and a frame area F provided around the display area D, similar to the organic EL display device 70a of the first embodiment.

[0088] Furthermore, like the organic EL display device 70a of the first embodiment described above, the organic EL display device 70b includes a resin substrate 10, a TFT layer 30a provided on the resin substrate 10, an organic EL element layer 40 provided on the TFT layer 30a, a sealing film 45 provided on the organic EL element layer 40, and a touch panel layer 60 provided on the sealing film 45.

[0089] Furthermore, like the organic EL display device 70a of the first embodiment described above, the organic EL display device 70b is provided with a first dam wall Wa arranged outside the trench G in the frame region F so as to surround the display region D, and a second dam wall Wb arranged around the first frame-shaped dam wall Wa.

[0090] Furthermore, the organic EL display device 70b includes a first frame wiring 18h and a second frame wiring 18i in the frame region F, similar to the organic EL display device 70a of the first embodiment.

[0091] Furthermore, the organic EL display device 70b includes a plurality of peripheral photo spacers 32b in the frame region F, similar to the organic EL display device 70a of the first embodiment.

[0092] As shown in FIG. 17, the organic EL display device 70b includes a resin filling film 8 provided at the folding portion B of the frame region F so as to fill first slits Sa formed in the base coat film 11, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17, a plurality of wiring lines 18j provided on the resin carpet film 8 and the second interlayer insulating film 17, and a resin protective film 19e provided so as to cover each wiring line 18j.

[0093] The resin protective film 19e is provided in a strip shape at the bent portion B along the extension direction of the bent portion B. Here, the resin protective film 19e is formed in the same layer and made of the same material as the planarizing film 19a. Furthermore, as shown in FIG. 17 , a strip-shaped groove C is provided on the surface of the resin protective film 19e at the bent portion B so as to extend along the extension direction of the bent portion B. Note that in this embodiment, in order to clean the surface of the resin protective film 19e, a portion of the surface of the resin protective film 19da ( FIG. 11 ) that will become the resin protective film 19e is removed by, for example, ashing to provide the strip-shaped groove C, but the entire surface of the resin protective film 19da may also be removed by ashing.

[0094] Furthermore, as shown in FIG. 17, the organic EL display device 70b has a second slit Sb provided in the first inorganic interlayer film 51a, the second inorganic interlayer film 53a, and the third inorganic interlayer film 55a at the bending portion B, similar to the organic EL display device 70a of the first embodiment described above.

[0095] As shown in FIG. 17 , the second slits Sb are groove-shaped and extend along the direction of the bent portion B, penetrating the first inorganic interlayer film 51 a, the second inorganic interlayer film 53 a, and the third inorganic interlayer film 55 a to expose the surface of the resin protective film 19 e. Here, in the second slits Sb, the end faces of the first inorganic interlayer film 51 a protrude beyond the end faces of the second inorganic interlayer film 53 a, as shown in FIGS. 17 and 18 . Furthermore, in the bent portion B, a plurality of conductive layers 52 c formed in the same layer and made of the same material as the coupling layer 52 a are provided in a rectangular island shape between the first inorganic interlayer film 51 a and the second inorganic interlayer film 53 a, as shown in FIGS. 17 and 18 . Furthermore, in the second slits Sb, the end faces of the third inorganic interlayer film 55 a protrude beyond the end faces of the first inorganic interlayer film 51 a, as shown in FIGS. 17 and 18 . 18, both side surfaces of the groove C are disposed outside both end surfaces of the first inorganic interlayer film 51a. Also, as shown in FIG. 18, each conductive layer 52c is provided so as to overlap with each lead-out wiring 18c.

[0096] Although the rectangular conductive layer 52c is exemplified in this embodiment, it may be an elliptical conductive layer 52ca as shown in FIG. 19, a triangular conductive layer 52cb as shown in FIG. 20, or the like.

[0097] Furthermore, in this embodiment, a configuration in which a plurality of island-shaped conductive layers 52c are provided has been exemplified, but similar to the organic EL display device 70a of the first embodiment, strip-shaped conductive layers 52b may also be provided.

[0098] In addition, in the present embodiment, the second inorganic interlayer film 53a has an end surface formed linearly in a plan view, but the second inorganic interlayer films 53aa, 53ab, etc. may have end surfaces such that portions overlapping with the lead-out wirings 18j are recessed in a plan view, as shown in Figures 21 and 22. Here, in the second inorganic interlayer film 53aa, as shown in Figure 21, the portions of the end surface overlapping with the lead-out wirings 18j are recessed in a U-shape in a plan view, and in the second inorganic interlayer film 53ab, as shown in Figure 22, the end surface is recessed in a sawtooth shape in a plan view.

[0099] The organic EL display device 70b described above is flexible, similar to the organic EL display device 70a of the first embodiment, and is configured to display an image by appropriately causing the light-emitting layer 3 of the organic EL element 35 to emit light via the first TFT 9a and the second TFT 9b in each sub-pixel P. Furthermore, the organic EL display device 70b described above is configured to calculate and detect a touched position on the surface of the third inorganic interlayer film 55a, similar to the organic EL display device 70a of the first embodiment.

[0100] The organic EL display device 70b of this embodiment can be manufactured by modifying the shapes of the resin protective film 19d and the conductive layer 52b in the manufacturing method of the organic EL display device 70a of the first embodiment. Note that in the manufacturing method of the organic EL display device 70b, the end face of the conductive layer 52c and the end face of the first inorganic interlayer film 51a are not aligned with each other in the second slits Sb, so a photomask sufficient for patterning the first inorganic interlayer film 51a is required.

[0101] As described above, according to the organic EL display device 70b of this embodiment, the first inorganic interlayer film 51a, the second inorganic interlayer film 53a, and the third inorganic interlayer film 55a constituting the touch panel layer 60 are provided with the second slits Sb at the folding portions B in the frame region F, the second slits Sb extending in the direction of extension of the folding portions B and exposing the surface of the resin protective film 19e. Here, in the second slits Sb, the end faces of the first inorganic interlayer film 51a protrude further than the end faces of the second inorganic interlayer film 53b. Therefore, for example, when the first inorganic interlayer film 51a, the second inorganic interlayer film 53a, and the third inorganic interlayer film 55a are simultaneously patterned so that their end faces are aligned, stress at the end portions of the inorganic interlayer films that concentrates between the resin protective film 19e and the first inorganic interlayer film 51a can be dispersed between the resin protective film 19e and the first inorganic interlayer film 51a and between the first inorganic interlayer film 51a and the second inorganic interlayer film 53a. This makes it possible to prevent film peeling between the resin protective film 19e and the first inorganic interlayer film 51a in the second slit Sb, thereby preventing film peeling at the end faces of the first inorganic interlayer film 51a and the second inorganic interlayer film 53a that constitute the touch panel layer 60 at the bending portion B.

[0102] Furthermore, according to the organic EL display device 70b of this embodiment, in the bending portion B, a plurality of conductive layers 52c are provided in an island shape between the first inorganic interlayer film 51a and the second inorganic interlayer film 53a, and each conductive layer 52c is provided so as to overlap with each routing wiring 18j, thereby making it possible to suppress film peeling at the end faces of the first inorganic interlayer film 51a and the second inorganic interlayer film 53a on each routing wiring 18j.

[0103] Furthermore, in the organic EL display device 70b of this embodiment, the end face of the third inorganic interlayer film 55a protrudes beyond the end face of the first inorganic interlayer film 51a in the second slit Sb, and therefore the end of the third inorganic interlayer film 55a is formed on the surface of the resin protective film 19e, the surface of which has been removed and cleaned when the first inorganic interlayer film 51a and the second inorganic interlayer film 53a are formed. Therefore, peeling at the end face of the third inorganic interlayer film 55a constituting the touch panel layer 60 can be suppressed at the bending portion B.

[0104] Furthermore, in the organic EL display device 70b of this embodiment, a strip-shaped groove C is provided on the surface of the resin protective film 19e so as to extend in the direction of extension of the bent portion B, thereby cleaning the inside of the groove C in the resin protective film 19e. Furthermore, both side surfaces of the groove C are positioned outward from both end surfaces of the first inorganic interlayer film 51a, so that the end of the first inorganic interlayer film 51a is formed at the bottom of the groove C in the resin protective film 19e. This improves the adhesion between the resin protective film 19e and the inorganic interlayer film 51a, thereby further suppressing film peeling at the end surfaces of the first inorganic interlayer film 51a that constitutes the touch panel layer 60 at the bent portion B.

[0105] Furthermore, according to the organic EL display device 70b of this embodiment, when the portions of the end faces of the second inorganic interlayer film 53aa (53ab) that overlap with each of the routing wirings 18j are recessed in a planar view, the stress on the end faces of the second inorganic interlayer film 53aa (53ab) is alleviated and the adhesion between the second inorganic interlayer film 53aa (53ab) and the first inorganic interlayer film 51a and each of the conductive layers 52c is improved, so that peeling at the end faces of the second inorganic interlayer film 53aa (53ab) that constitutes the touch panel layer 60 at the bending portion B can be further suppressed.

[0106] Other Embodiments In the above-described embodiments, the organic EL layer has a five-layer laminated structure including a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer. However, the organic EL layer may have a three-layer laminated structure including, for example, a hole injection layer / hole transport layer, a light-emitting layer, and an electron transport layer / electron injection layer.

[0107] In addition, in each of the above embodiments, an organic EL display device in which the first electrode is an anode and the second electrode is a cathode is exemplified. However, the present invention can also be applied to an organic EL display device in which the stacked structure of the organic EL layer is reversed, and the first electrode is a cathode and the second electrode is an anode.

[0108] Furthermore, in each of the above embodiments, an organic EL display device is exemplified in which the electrode of the TFT connected to the first electrode is used as the drain electrode, but the present invention can also be applied to an organic EL display device in which the electrode of the TFT connected to the first electrode is called the source electrode.

[0109] Furthermore, in each of the above embodiments, an organic EL display device has been described as an example of a display device. However, the present invention can be applied to a display device including a plurality of light-emitting elements driven by current, and can be applied to, for example, a display device including QLEDs (Quantum-dot light emitting diodes), which are light-emitting elements using a quantum dot-containing layer.

[0110] As described above, the present invention is useful for flexible display devices.

[0111] B Bending portion C Groove D Display area F Frame area P Sub-pixel Sa First slit Sb Second slit T Terminal portion 8 Resin filling film 10 Resin substrate 11 Base coat film (inorganic insulating film) 13 Gate insulating film (inorganic insulating film) 15 First interlayer insulating film (inorganic insulating film) 17 Second interlayer insulating film (inorganic insulating film) 18a, 18c Source electrode (metal layer) 18b, 18d Drain electrode (metal layer) 18f Source line (metal layer) 18g Power supply line (metal layer) 18h First frame wiring (metal layer) 18i Second frame wiring (metal layer) 18j Leading wiring 19a Planarization film 19d, 19e Resin protective film 30a TFT layer (thin film transistor layer) 35 Organic EL element (organic electroluminescence element, light-emitting element) 40 Organic EL element layer (light emitting element layer) 45 Sealing film 51a First inorganic interlayer film 52a Coupling layer (first wiring layer) 52b, 52c, 52ca, 52cb Conductive layer 53a, 53aa, 53ab Second inorganic interlayer film 54a First touch electrode (second wiring layer) 54b Second touch electrode (second wiring layer) 55a Third inorganic interlayer film 60 Touch panel layer 70a, 70b Organic EL display device

Claims

a thin film transistor layer provided on the resin substrate, the thin film transistor layer being formed by sequentially stacking an inorganic insulating film, a metal layer and a planarizing film; a light emitting element layer provided on the thin film transistor layer, the light emitting element layer having a plurality of light emitting elements arranged corresponding to a plurality of sub-pixels constituting a display area; a sealing film provided on the light emitting element layer; and a touch panel layer provided on the sealing film, the touch panel layer being formed by sequentially stacking a first inorganic interlayer film, a first wiring layer, a second inorganic interlayer film, a second wiring layer and a third inorganic interlayer film, wherein a frame region is provided around the display area, and terminal portions are provided at ends of the frame region, and a bent portion is provided between the display area and the terminal portion so as to extend in one direction, the inorganic insulating film is provided with a first slit at the bent portion, the first slit extending in the direction of extension of the bent portion and exposing a surface of the resin substrate, and a resin filling film is provided in the bent portion so as to fill the first slit, a resin filling film is provided on the resin filling film with a plurality of wiring lines formed in the same layer as the metal layer and made of the same material as the metal layer so as to extend parallel to each other in a direction intersecting the extension direction of the bent portion; a resin protective film is provided in the same layer as the planarization film and made of the same material as the planarization film so as to cover each of the wiring lines; and the first inorganic interlayer film, the second inorganic interlayer film and the third inorganic interlayer film are provided with second slits at the bent portion, extending along the extension direction of the bent portion and exposing the surface of the resin protective film, characterized in that at the second slits, an end face of the first inorganic interlayer film protrudes further than an end face of the second inorganic interlayer film.

2. A display device according to claim 1, characterized in that in the bent portion, a conductive layer formed in the same layer as the first wiring layer and made of the same material as the first inorganic interlayer film is provided between the first inorganic interlayer film and the second inorganic interlayer film, and in the second slit, an end face of the conductive layer is provided so as to be aligned with an end face of the first inorganic interlayer film.

3. A display device according to claim 1, characterized in that in the folded portion, between the first inorganic interlayer film and the second inorganic interlayer film, a plurality of conductive layers formed in the same layer and made of the same material as the first wiring layer are provided in an island shape so as to overlap with each of the lead-out wirings.

4. A display device according to claim 3, wherein the end face of the second inorganic interlayer film is recessed in a plan view at portions overlapping with the respective lead-out wirings.

5. A display device according to any one of claims 1 to 4, characterized in that in the second slit, an end face of the third inorganic interlayer film protrudes further than an end face of the first inorganic interlayer film.

6. A display device according to any one of claims 1 to 5, characterized in that a strip-shaped groove is provided on the surface of the resin protective film at the bent portion so as to extend in the direction in which the bent portion extends, and both side surfaces of the groove are located outside both end surfaces of the first inorganic interlayer film.

7. The display device according to any one of claims 1 to 6, wherein each of the light-emitting elements is an organic electroluminescence element.

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