Imaging device and electronic apparatus

Abstract

An imaging device according to one embodiment of the present disclosure comprises a plurality of pixel sets each including a prescribed number of pixels, and a plurality of lenses provided one by one for each of the pixel sets. The plurality of pixel sets and the plurality of lenses are provided in a honeycomb array in plan view. Each of the plurality of pixel sets is formed in a hexagonal shape in plan view.

Description

Imaging devices and electronic devices

[0001] The present disclosure relates to an imaging device and an electronic device.

[0002] Some imaging devices obtain an image plane phase difference to realize autofocus. For example, Patent Literature 1 discloses an imaging device in which one lens is provided on a pixel pair having two pixels. Note that the imaging device is also referred to as a solid-state imaging device or a solid-state imaging element.

[0003] The pixel pairs and the lenses are arranged, for example, in a honeycomb array in plan view. Each lens is formed in a circular or elliptical shape in plan view so as to cover almost the entire surface of the pixel pair. To improve quantum efficiency (QE), it is effective to reduce the distance between the lenses (gap area). For this reason, the lenses are arranged in a honeycomb array.

[0004] International Publication No. 2012 / 026292

[0005] However, in the above-described configuration, part of the lens on a pixel pair intrudes onto another pixel pair adjacent to that pixel pair, causing crosstalk and deteriorating, for example, color reproducibility, phase difference detection accuracy, sensitivity uniformity, etc. For this reason, in addition to improving quantum efficiency, there is a demand for suppressing crosstalk.

[0006] Therefore, the present disclosure proposes an imaging device and electronic device that can improve quantum efficiency and suppress crosstalk.

[0007] An imaging device according to one embodiment of the present disclosure comprises a plurality of pixel sets, each including a predetermined number of pixels, and a plurality of lenses, one for each pixel set, wherein the plurality of pixel sets and the plurality of lenses are arranged in a honeycomb array in a planar view, and each of the plurality of pixel sets is formed in a hexagonal shape in a planar view.

[0008] An electronic device according to one embodiment of the present disclosure includes an imaging device having a plurality of pixel sets, each including a predetermined number of pixels, and a plurality of lenses, one for each pixel set, wherein the plurality of pixel sets and the plurality of lenses are arranged in a honeycomb array in a planar view, and each of the plurality of pixel sets is formed in a hexagonal shape in a planar view.

[0009] 1 is a diagram illustrating a configuration example of an imaging device according to a first embodiment. FIG. 2 is a plan view illustrating a configuration example of a pixel array unit according to the first embodiment. FIG. 3 is a plan view illustrating a configuration example of a pixel array unit of a comparative example according to the first embodiment. FIG. 4 is a cross-sectional view illustrating a configuration example of a cross-sectional structure of a pixel array unit according to the first embodiment. FIG. 5 is a cross-sectional view illustrating a first configuration example of a pixel according to the first embodiment. FIG. 6 is a plan view illustrating a first configuration example of a pixel according to the first embodiment. FIG. 7 is a cross-sectional view illustrating a second configuration example of a pixel according to the first embodiment. FIG. 8 is a plan view illustrating a second configuration example of a pixel array unit according to the second embodiment. FIG. 9 is a plan view illustrating a first configuration example of a pixel array unit according to a third embodiment. FIG. 10 is a plan view illustrating a second configuration example of a pixel array unit according to a fourth embodiment. FIG. 11 is a diagram for explaining an example of a zoom operation of an imaging device according to any of the above-described embodiments. FIG. 12 is a diagram illustrating an application example using an imaging device according to an application example. FIG. 13 is a diagram illustrating an example of a distance measuring device according to an application example.

[0010] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. The embodiments include examples and modified examples. Note that the embodiments do not limit the devices, equipment, methods, etc. according to the present disclosure. Furthermore, in the following embodiments, essentially identical components are designated by the same reference numerals, and redundant explanations will be omitted.

[0011] One or more of the following embodiments can be implemented independently. However, at least a portion of the following embodiments may be implemented in appropriate combination with at least a portion of another embodiment. These embodiments may include novel features that are different from one another. Therefore, each embodiment may contribute to solving different objectives or problems, and may achieve different effects. The effects of each embodiment are merely examples and are not intended to be limiting, and other effects may also be achieved.

[0012] The present disclosure will be described in the following order: 1. First Embodiment 1-1. Configuration Example of Imaging Device 1-2. Configuration Example of Pixel Array Section 1-3. Configuration Example of Pixel 1-3-1. Configuration Example 1 1-3-2. Configuration Example 2 2. Second Embodiment 2-1. Configuration Example of Pixel Array Section 3. Third Embodiment 3-1. Configuration Example of Pixel Array Section 3-1-1. Configuration Example 1 3-1-2. Configuration Example 2 4. Fourth Embodiment 4-1. Configuration Example of Pixel Array Section 4-2. Zoom Operation Example of Imaging Device 5. Functions and Effects of Each Embodiment 6. Other Embodiments 7. Application Example 7-1. Imaging Device 7-2. Distance Metering Device 8. Supplementary Notes

[0013] 1. First Embodiment 1-1. Configuration Example of Imaging Apparatus An example of the configuration of an imaging apparatus 10 according to this embodiment will be described with reference to Fig. 1. Fig. 1 is a diagram showing an example of the configuration of the imaging apparatus 10 according to this embodiment.

[0014] 1, the imaging device 10 includes a pixel array unit 11, a vertical drive unit 12, a column signal processing unit 13, and a control unit 14. The imaging device 10 is, for example, a solid-state imaging device that generates image data of a subject.

[0015] The pixel array unit 11 is configured by arranging a plurality of pixels 100. In the example of FIG. 1, the pixels 100 are arranged in a two-dimensional matrix. Each pixel 100 includes a photoelectric conversion unit that performs photoelectric conversion of incident light, and generates an image signal of the subject based on the incident light that is irradiated. For example, a photodiode can be used as the photoelectric conversion unit.

[0016] A signal line 15 and a signal line 16 are connected to each pixel 100. The pixel 100 generates an image signal under control of a control signal transmitted through the signal line 15, and outputs the generated image signal to the column signal processing unit 13 via the signal line 16. The signal line 15 is arranged for each row of the two-dimensional matrix, and is commonly connected to multiple pixels 100 arranged in one row. The signal line 16 is arranged for each column of the two-dimensional matrix, and is commonly connected to multiple pixels 100 arranged in one column.

[0017] The vertical drive unit 12 generates control signals for the pixels 100. The vertical drive unit 12 generates a control signal for each row of the two-dimensional matrix of the pixel array unit 11, and outputs the generated control signals to each pixel 100 via each signal line 15.

[0018] The column signal processing unit 13 processes image signals generated by the pixels 100. The column signal processing unit 13 simultaneously processes image signals transmitted via signal lines 16 from each of the pixels 100 arranged in one row of the pixel array unit 11. Examples of this processing include analog-to-digital conversion, which converts analog image signals generated by the pixels 100 into digital image signals, and correlated double sampling (CDS), which removes offset errors in the image signals. The processed image signals are output to an external circuit or the like of the imaging device 10.

[0019] The control unit 14 controls the vertical drive unit 12 and the column signal processing unit 13. The control unit 14 generates control signals for controlling the vertical drive unit 12 and the column signal processing unit 13 based on data instructing a clock, an operation mode, etc., input from an external circuit, etc. The control unit 14 outputs control signals to the vertical drive unit 12 via a signal line 17 and to the column signal processing unit 13 via a signal line 18, thereby controlling the vertical drive unit 12 and the column signal processing unit 13.

[0020] The imaging device 10 configured as described above basically receives light incident from a subject, photoelectrically converts the light, and outputs an electrical signal corresponding to the amount of light. This imaging device 10 may be, for example, a wafer-level chip size package (WLCSP) formed by a method in which terminals and wiring are formed before dicing a wafer (silicon wafer). The type of imaging device 10 is not particularly limited, and may be a front-illuminated or back-illuminated type. Furthermore, the imaging device 10 may be a complementary metal oxide semiconductor (CMOS), a charge-coupled device (CCD), or any other type.

[0021] <1-2. Configuration Example of Pixel Array Section> A configuration example of the pixel array section 11 according to this embodiment will be described with reference to FIGS. 2 to 4. FIG. 2 is a plan view showing a configuration example of the pixel array section 11 according to this embodiment. FIG. 3 is a plan view showing a configuration example of a pixel array section 11A of a comparative example according to this embodiment. FIG. 4 is a cross-sectional view showing a configuration example of the cross-sectional structure of the pixel array section 11 according to this embodiment. Note that FIG. 4 shows a cross section corresponding to the Y1-Y1 line shown in FIG. 2.

[0022] 2, the pixel array unit 11 has a plurality of pixel blocks B1 and a plurality of lenses 101. In the example of Fig. 2, one pixel block B1 is clearly shown, but in reality, a plurality of pixel blocks B1 are arranged, for example, in a two-dimensional matrix.

[0023] The pixel block B1 has, for example, four pixels 100. Each pixel 100 is formed in a trapezoidal shape in a planar view. In the example of FIG. 2 , each pixel 100 is formed in an isosceles trapezoidal shape in a planar view, and two pixels 100 adjacent to each other in the X-axis direction, i.e., a pixel pair 110, are formed in a hexagonal shape in a planar view. In the pixel block B1, the two pixel pairs 110 are arranged so as to be offset from each other by one pixel 100 in the X-axis direction. Therefore, each pixel pair 110 is arranged in a honeycomb array. The pixel pair 110 functions as a pixel set having two pixels 100.

[0024] The pixel blocks B1 include, for example, a green (Gr) pixel block, a red (R) pixel block, a blue (B) pixel block, and a green (Gb) pixel block. For example, these four pixel blocks B1 are used as a minimum repeating unit (pixel unit), and each pixel 100 is provided in each pixel block B1. The pixel blocks B1 have optical filters such as color filters.

[0025] Four pixel blocks B1, including a green (Gr) pixel block, a red (R) pixel block, a blue (B) pixel block, and a green (Gb) pixel block, are arranged, for example, in a 2-row by 2-column configuration. For example, the green (Gr) pixel block is arranged in the upper left, the red (R) pixel block is arranged in the upper right, the blue (B) pixel block is arranged in the lower left, and the green (Gb) pixel block is arranged in the lower right. This type of arrangement is called, for example, 2x2 QBC (Quad Bayer Coding).

[0026] A lens 101 is provided for each pixel pair 110 and is shared by the pixel pairs 110. This lens 101 is formed, for example, in an elliptical (or circular) shape in plan view so as to cover almost the entire surface of the pixel pair 110. The lenses 101 for each pixel pair 110 are arranged in a honeycomb array. More specifically, lens rows in which the lenses 101 are aligned in the X-axis direction are aligned parallel to each other in the Y-axis direction, but each lens row is alternately arranged in the X-axis direction with a shift by one pixel 100 (half the lens diameter = half pitch).

[0027] Comparative Example As shown in Fig. 3, in a pixel array unit 11A of the comparative example, each pixel 100 is formed in a rectangular shape in a plan view. Each lens 101 is formed in an elliptical (or circular) shape in a plan view so as to cover almost the entire surface of the pixel pair 110. In order to improve quantum efficiency (QE), it is effective to reduce the separation distance (gap area) between each lens 101. For this reason, each lens 101 is arranged in a honeycomb array.

[0028] However, in the configuration of the comparative example, part of the lens 101 on one pixel pair 110 intrudes onto another pixel pair 110 adjacent to that pixel pair 110. In other words, part of the lens 101 on one pixel pair 110 encroaches onto another pixel pair 110 adjacent to that pixel pair 110, causing crosstalk and deteriorating, for example, color reproducibility, phase difference detection accuracy, and sensitivity uniformity. For this reason, in addition to improving quantum efficiency, it is necessary to suppress crosstalk.

[0029] Therefore, in this embodiment, by making the planar shape of the pixel 100 trapezoidal and the planar shape of the pixel pair 110 hexagonal in plan view, it is possible to minimize the separation distance between the lenses 101 while preventing a portion of the lens 101 on one pixel pair 110 from encroaching on another pixel pair 110 adjacent to that pixel pair 110. This makes it possible to improve quantum efficiency and suppress crosstalk.

[0030] In order to improve quantum efficiency (QE), in addition to the method of arranging the lenses 101 in a honeycomb array, a method of forming the lenses 101 in a rectangular planar shape to match the planar shape of the rectangular pixels 100 is also considered. However, when the planar shape of the lenses 101 is rectangular, the curvature of the lenses 101 tends to be low, which reduces the phase difference detection accuracy. Furthermore, in the process of forming the lenses 101, such as a reflow process, it is difficult to form the planar shape of the lenses 101 in a rectangular shape (resulting in a lower yield), and special exposure equipment, masks, etc. are required, which increases costs. For these reasons, in order to improve quantum efficiency (QE), it is preferable to arrange the lenses 101 in a honeycomb array.

[0031] As shown in FIG. 4 , the pixel array section 11 further includes a semiconductor substrate 111 , a light receiving section 112 , a separation section 113 , a separation region 114 , a multilayer wiring layer 121 , a color filter 131 , and a light-shielding layer 132 .

[0032] The semiconductor substrate 111 is a support substrate on which the imaging device 10 is formed. The semiconductor substrate 111 is, for example, a P-type semiconductor substrate, and has a pair of opposing surfaces (a front surface S1 and a back surface S2). The back surface S2 is the light incident surface. The semiconductor substrate 111 can be, for example, a substrate such as a silicon wafer.

[0033] The light receiving units 112 are semiconductor regions embedded in the semiconductor substrate 111 at positions corresponding to the plurality of pixels 100. The semiconductor regions are doped with, for example, N-type impurities to form photodiodes (PDs). The photodiodes are an example of photoelectric conversion elements.

[0034] The isolation portion 113 is provided at the boundary between adjacent pixels 100 in the XY plane within the semiconductor substrate 111. In the example of Fig. 3, the isolation portion 113 is a deep trench isolation (DTI) formed using an insulating material such as an oxide film, but may have another structure.

[0035] The isolation region 114 is a semiconductor region that separates the light receiving section 112, for example, a photodiode. The isolation region 114 is formed by doping this semiconductor region with, for example, a P-type impurity.

[0036] The multilayer wiring layer 121 is provided on the surface S1 of the semiconductor substrate 111, which is the surface opposite to the light incident side S of the pixel array unit 11. The multilayer wiring layer 121 includes, for example, multiple wiring layers 122, 123, and 124 and an interlayer insulating layer 125. The wiring layers 122, 123, and 124 are provided on the surface S1 of the semiconductor substrate 111 in order from the light incident side S. Each of the wiring layers 122, 123, and 124 is provided with multiple wirings, such as control lines. The control lines are, for example, wirings that connect multiple transistors provided on the surface S1 of the semiconductor substrate 111 to the vertical drive unit 12, the column signal processing unit 13, etc.

[0037] The color filter 131 is provided on the back surface (light incident surface) S2 of the semiconductor substrate 111, which is the light incident side S of the pixel array section 11. The color filter 131 is any one of red (R), green (Gr, Gb), and blue (B) color filters. The color filter 131 may be provided for every two pixels 100 adjacent in the X-axis direction (pixel pair 110), or may be provided for every pixel 100. In either case, each pixel 100 has a color filter 131.

[0038] The light-shielding layer 132 is provided on the back surface (light incident surface) S2 of the semiconductor substrate 111, for example, for each pair of pixels 100 adjacent to each other in the X-axis direction, i.e., for each pixel pair 110, so as to surround the pixel pair 110. The light-shielding layer 132 may function, for example, as a color filter wall that separates the color filters 131, or may function as a layer that only blocks light without separating the color filters 131.

[0039] Each lens 101 is, for example, an on-chip lens (convex lens) and is provided on a color filter 131 on the light incident side S of the pixel array unit 11. A lens 101 is provided for each pair of pixels 100 adjacent to each other in the X-axis direction, i.e., for each pixel pair 110, above the pixel pair 110. For example, each lens 101 is formed by a reflow method, an etch-back method, or the like. For example, a microlens can be used as each lens 101.

[0040] With this configuration, the images of the two pixels 100 in a pixel pair 110 corresponding to one lens 101 are shifted from each other. The imaging device 10 generates phase difference data based on what is called an image plane phase difference detected by the multiple pixel pairs 110. For example, a camera equipped with the imaging device 10 determines a defocus amount based on this phase difference data, and moves the position of the photographing lens based on this defocus amount. In this way, the camera can achieve autofocus.

[0041] 1-3. Configuration Examples of Pixel> Configuration examples 1 and 2 of the pixel 100 according to this embodiment will be described with reference to FIGS. 5 to 8. FIG.

[0042] 5 is a cross-sectional view showing a first configuration example of the pixel 100 according to this embodiment. FIG. 6 is a plan view showing a first configuration example of the pixel 100 according to this embodiment.

[0043] 5, the pixel array unit 11 has a trapezoidal region A1, a shape transition region A2, and a square region A3. That is, the pixel 100 is divided into the trapezoidal region A1, the shape transition region A2, and the square region A3.

[0044] In the trapezoidal region A1 of the pixel 100, the separation portion 113 is formed in a trapezoidal shape in a planar view, as shown in Fig. 6. As a result, the main portion of the semiconductor substrate 111 of the pixel 100 is trapezoidal in a planar view, and the pixel 100 is formed in a trapezoidal shape in a planar view. In the square-shaped region A3 of the pixel 100, the separation region 114 is formed in a rectangular shape (for example, a square) in a planar view, as shown in Fig. 6. In the shape transition region A2 of the pixel 100, the separation portion 113 and the separation region 114 are connected to each other.

[0045] 5, for example, a pixel transistor T1 is provided on the surface S1 of the semiconductor substrate 111. Examples of the pixel transistor T1 include a transfer transistor, a reset transistor, an amplification transistor, and a selection transistor. The pixel transistor T1 is basically provided for each pixel 100.

[0046] <1-3-2. Configuration Example 2> Fig. 7 is a cross-sectional view showing Configuration Example 2 of the pixel 100 according to this embodiment. Fig. 8 is a plan view showing Configuration Example 2 of the pixel 100 according to this embodiment. Note that in Configuration Example 2, differences from the above-described Configuration Example 1 will be described.

[0047] 7, the pixel array section 11 has a hexagonal region A4 and a square region A5. That is, the pixel 100 is divided into the hexagonal region A4 and the square region A5.

[0048] In the hexagonal region A4 of the pixel 100, the light-shielding layer 132 is formed in a hexagonal shape in a planar view, as shown in Fig. 8 . As a result, the color filter 131 of the pixel pair 110 is formed in a hexagonal shape in a planar view, and the pixel pair 110 is formed in a hexagonal shape in a planar view. In addition, in the square-shaped region A5 of the pixel 100, the separation portion 113 is formed in a rectangular shape (for example, a square) in a planar view, as shown in Fig. 8 . Note that the separation region 114, like the separation portion 113, is also formed in a rectangular shape (for example, a square) in a planar view.

[0049] It should be noted that the imaging device 10 according to this embodiment can be manufactured using methods, devices, conditions, and the like used for manufacturing general semiconductor devices. That is, the imaging device 10 according to this embodiment can be manufactured using existing semiconductor device manufacturing methods. For example, various methods can be used to manufacture the imaging device 10, such as coating methods such as chemical vapor deposition, physical vapor deposition, and spin coating, lithography techniques, and techniques for attaching a support substrate, a peripheral circuit board, and the like.

[0050] <2. Second Embodiment> <2-1. Configuration Example of Pixel Array Unit> A configuration example of the pixel array unit 11 according to this embodiment will be described with reference to Fig. 9. Fig. 9 is a plan view showing a configuration example of the pixel array unit 11 according to this embodiment. Note that in this embodiment, differences from the first embodiment will be described.

[0051] As shown in Fig. 9 , the pixel set 110A according to this embodiment has four pixels 100. In other words, the number of pixels sharing the lens 101 is not limited to two, but may be four. The pixel block B1 has eight pixels 100. Each of the pixels 100 is formed in a trapezoidal shape in a planar view. In the example of Fig. 9 , each of the pixels 100 is formed in a right-angled trapezoidal shape in a planar view.

[0052] According to this embodiment, it is possible to obtain the same effects as in Embodiment 1. Furthermore, by configuring the pixel set 110A with four pixels 100, it is possible to perform phase difference detection in a plurality of directions in the pixel set 110A.

[0053] 3. Third Embodiment 3-1. Configuration Examples of Pixel Array Unit Configuration examples 1 and 2 of the pixel array unit 11 according to this embodiment will be described with reference to Fig. 10 and Fig. 11. Note that in this embodiment, differences from the first embodiment will be described.

[0054] <3-1-1. Configuration Example 1> FIG. 10 is a plan view showing Configuration Example 1 of the pixel array unit 11 according to this embodiment.

[0055] 10 , in configuration example 1, the pixel boundary direction (pixel division direction) is the same for each pixel pair 110, and the pixel boundary direction is a direction oblique to the X-axis direction. In other words, in the example of Fig. 10 , the pixel boundary direction for each pixel pair 110 is a direction that intersects with the X-axis direction. The pixel boundary direction is the extension direction of the boundary that divides the two pixels 100 in the pixel pair 110.

[0056] In the example of FIG. 2, the pixel boundary direction for each pixel pair 110 is perpendicular to the X-axis direction, that is, parallel to the Y-axis direction.

[0057] <3-1-2. Configuration Example 2> FIG. 11 is a plan view showing a configuration example 2 of the pixel array unit 11 according to this embodiment.

[0058] 11 , in configuration example 2, the pixel boundary direction is different for each pixel pair 110. In the example of Fig. 11 , the pixel boundary direction is different for each of the four pixel pairs 110, but in reality, the pixel boundary direction differs depending on various predetermined conditions. Examples of pixel boundary directions include a direction that slopes upward and to the right with respect to the X-axis direction, a direction that is parallel to the Y-axis direction, and a direction that slopes downward and to the right with respect to the X-axis direction.

[0059] According to this embodiment, it is possible to obtain the same effects as those of the first embodiment. That is, according to Configuration Example 1 or Configuration Example 2, it is possible to improve quantum efficiency and suppress crosstalk. Furthermore, according to Configuration Example 2, it is possible to perform phase difference detection in multiple directions by mixing multiple pixel boundary directions that are different from each other.

[0060] <4. Fourth Embodiment> <4-1. Configuration Example of Pixel Array Unit> A configuration example of the pixel array unit 11 according to this embodiment will be described with reference to Fig. 12. Fig. 12 is a plan view showing a configuration example of the pixel array unit 11 according to this embodiment. Note that in this embodiment, differences from the first embodiment will be described.

[0061] 12, in the fourth embodiment, a plurality of pixel units U1 are provided in the pixel array section 11. In the example of Fig. 12, one pixel unit U1 is shown, but in reality, a plurality of pixel units U1 are provided.

[0062] The pixel unit U1 has four pixel blocks B1a, B1b, B1c, and B1d, namely, a green (Gr) pixel block B1a, a red (R) pixel block B1b, a blue (B) pixel block B1c, and a green (Gb) pixel block B1d.

[0063] Each of the green (Gr) pixel block B1a and the green (Gb) pixel block B1d has ten pixels 100 (five pixel pairs 110). Each of the red (R) pixel block B1b and the blue (B) pixel block B1c has eight pixels 100 (four pixel pairs 110).

[0064] The arrangement pattern of the pixels 100 in the green (Gr) pixel block B1a and the arrangement pattern of the pixels 100 in the green (Gb) pixel block B1d are the same, and are, for example, an H-shaped pattern in which four, two, and four pixels 100 are arranged in parallel in the X-axis direction, and then arranged in order in the Y-axis direction.

[0065] The arrangement pattern of the pixels 100 in the red (R) pixel block B1b and the arrangement pattern of the pixels 100 in the blue (B) pixel block B1c are the same, and the arrangement pattern of the pixels 100 is, for example, a cross pattern in which two, four, and two pixels 100 are arranged in parallel in the X-axis direction, and then arranged in order in the Y-axis direction.

[0066] The green (Gr) pixel block B1a, red (R) pixel block B1b, blue (B) pixel block B1c, and green (Gb) pixel block B1d are arranged, for example, in a 2-row by 2-column configuration. For example, the green (Gr) pixel block B1a is arranged in the upper left, the red (R) pixel block B1b is arranged in the upper right, the blue (B) pixel block B1c is arranged in the lower left, and the green (Gb) pixel block B1d is arranged in the lower right. This type of arrangement is called, for example, Deca-Octa Bayer Coding (DOBC).

[0067] According to this embodiment, it is possible to obtain the same effects as those of the first embodiment. That is, even when the pixels 100 are arranged in a DOBC configuration, it is possible to improve quantum efficiency and suppress crosstalk.

[0068] <4-2. Example of Zoom Operation of Imaging Device> An example of zoom operation of the imaging device 10 described above will be described with reference to Fig. 13. Fig. 13 is a diagram for explaining an example of zoom operation of the imaging device 10 according to this embodiment. In the example of Fig. 13, (A) shows an image G1 and operation when the zoom magnification is 1x, (B) shows an image G2 and operation when the zoom magnification is 2x, and (C) shows an image G3 and operation when the zoom magnification is 3x. Each of the images G1, G2, and G3 includes a subject H1.

[0069] 13 , the imaging device 10 has three imaging modes MA, MB, and MC. The control unit 14 selects one of the three imaging modes MA, MB, and MC based on information about the zoom magnification included in the control signal. Specifically, the control unit 14 selects the imaging mode MA when the zoom magnification is less than 2, selects the imaging mode MB when the zoom magnification is equal to or greater than 2 but less than 3, and selects the imaging mode MC when the zoom magnification is equal to or greater than 3.

[0070] In imaging mode MA (see (A) in FIG. 13 ), the imaging device 10 defines four pixel blocks B1a, B1b, B1c, and B1d as one pixel unit U1, and obtains four pixel values ​​V (e.g., four pixel values ​​VGr, VR, VB, and VGb) for each of the pixel units U1. In this manner, the imaging device 10 generates image data DP by generating four pixel values ​​V for every 36 pixels 100. For example, if the number of pixels 100 in the pixel array section 11 is 108 (Mpix), 12 (Mpix) worth of pixel values ​​V are calculated. As a result, the number of effective pixels becomes 12 (Mpix).

[0071] In this imaging mode MA, for example, when the zoom magnification is increased from 1, the number of effective pixels decreases in accordance with the magnification. Then, when the zoom magnification becomes 2, the imaging mode changes to imaging mode MB. The number of effective pixels when the zoom magnification is 2 is the same as the number of effective pixels when the zoom magnification is 1.

[0072] In imaging mode MB (see (B) in FIG. 13 ), the imaging device 10 obtains 16 pixel values ​​V for each of the plurality of pixel units U1. In this way, the imaging device 10 generates image data DP by generating pixel values ​​V at a ratio of 16 for every 36 pixels 100. For example, if the number of pixels 100 in the pixel array unit 11 is 108 (Mpix), then 48 (Mpix) worth of pixel values ​​V are calculated. In reality, because the zoom magnification is 2x, the imaging range is narrowed to 1 / 4, and the number of effective pixels is 12 (Mpix) (= 48 / 4).

[0073] In such imaging mode MB, for example, when the zoom magnification is increased from 2, the number of effective pixels decreases in accordance with the magnification. Then, when the zoom magnification becomes 3, the imaging mode changes to imaging mode MC. The number of effective pixels when this zoom magnification is 3 is the same as the number of effective pixels when the zoom magnification is 2.

[0074] In imaging mode MC (see (C) in FIG. 13 ), the imaging device 10 obtains 36 pixel values ​​V in each of the plurality of pixel units U1. In this way, the imaging device 10 generates image data DP by generating 36 pixel values ​​V for each of the 36 pixels 100. For example, if the number of pixels 100 in the pixel array unit 11 is 108 (Mpix), a captured image of 108 (Mpix) can be obtained. In reality, because the zoom magnification is 3x, the imaging range is narrowed to 1 / 9, and the number of effective pixels is 12 (Mpix) (=108 / 9).

[0075] In this way, by providing the imaging device 10 with three imaging modes MA, MB, and MC, it is possible to reduce changes in the quality of captured images when the zoom magnification is changed. For example, if the imaging mode MB is omitted and only two imaging modes MA and MC are provided, and imaging mode MA is selected when the zoom magnification is less than 2x and imaging mode MC is selected when the zoom magnification is 2x or greater, the number of effective pixels will change significantly. In this example, when the zoom magnification is 2x, imaging mode MC is selected, and the number of effective pixels is 27 (Mpix) (=108 / 4). Therefore, there is a large difference between the number of effective pixels when the zoom magnification is, for example, 1.9x and the number of effective pixels when the zoom magnification is 2x, and therefore the quality of captured images may change significantly when the zoom magnification is around 2x. On the other hand, since the imaging device 10 provides three imaging modes MA, MB, and MC, it is possible to reduce changes in the number of effective pixels when the zoom magnification is changed, thereby suppressing changes in the quality of captured images.

[0076] 5. Functions and Effects of Each Embodiment As described above, the imaging device 10 according to each embodiment includes a plurality of pixel sets (e.g., pixel pairs 110 or pixel sets 110A), each including a predetermined number of pixels 100, and a plurality of lenses 101, one for each pixel set. The pixel sets and the lenses 101 are arranged in a honeycomb array in a planar view, and each of the pixel sets is formed into a hexagonal shape in a planar view (see, for example, FIGS. 2 and 9 ). This minimizes the separation distance between the lenses 101 while preventing a portion of the lens 101 on one pixel pair 110 from encroaching on another pixel pair 110 adjacent to that pixel pair 110. This makes it possible to achieve improved quantum efficiency and reduced crosstalk.

[0077] Furthermore, the pixel 100 may be formed in a trapezoidal shape in plan view (see, for example, FIGS. 2 and 9 ), which makes it easy to form the planar shape of the pixel set in a hexagonal shape, thereby reliably achieving improved quantum efficiency and suppression of crosstalk.

[0078] Furthermore, the pixels 100 may have separation portions 113 that are provided at the boundaries of the pixels 100 and separate the pixels 100, and the separation portions 113 may be formed in a trapezoidal shape in plan view (see FIGS. 5 and 6 ). This allows the planar shape of the pixels 100 to be easily formed in a trapezoidal shape.

[0079] Furthermore, in addition to the separation portion 113 that is trapezoidal in plan view, the pixel 100 may further have an separation region 114 that is connected to the separation portion 113 and separates the pixel 100, and the separation region 114 may be formed in a rectangular shape in plan view (see FIGS. 5 and 6 ). This eliminates the need for the separation region 114 to have a trapezoidal planar shape, and the planar shape of the pixel 100 can easily be made trapezoidal.

[0080] Furthermore, the pixel set (for example, the pixel pair 110 or the pixel set 110A) may have a light-shielding layer 132 that surrounds the pixel set in a planar view, and the light-shielding layer 132 may be formed in a hexagonal shape in a planar view (see FIGS. 7 and 8 ). This makes it easy to form the planar shape of the pixel set into a hexagonal shape.

[0081] Furthermore, in addition to the light-shielding layer 132 that is hexagonal in plan view, the pixel 100 further has a separation portion 113 that is provided at the boundary of the pixel 100 and separates the pixels 100, and the separation portion 113 may be formed in a rectangular shape in plan view (see FIGS. 7 and 8 ). This eliminates the need for the separation portion 113 to have a trapezoidal planar shape, and the planar shape of the pixel set can easily be made hexagonal.

[0082] Furthermore, in addition to the light-shielding layer 132 that is hexagonal in plan view, the pixel 100 further has an isolation region 114 that is connected to the isolation portion 113 and isolates the pixel 100, and the isolation region 114 may be formed in a rectangular shape in plan view (see FIGS. 7 and 8 ). This eliminates the need for the isolation region 114 to have a trapezoidal planar shape, and the planar shape of the pixel set can easily be made hexagonal.

[0083] Furthermore, the lenses 101 are formed in an elliptical or circular shape in plan view (see FIG. 2, etc.). Even with this configuration, it is possible to minimize the distance between the lenses 101 and prevent a portion of the lens 101 on one pixel pair 110 from encroaching on another pixel pair 110 adjacent to that pixel pair 110. Therefore, it is possible to improve quantum efficiency and suppress crosstalk.

[0084] Alternatively, the predetermined number of pixels 100 may be two pixels 100 (pixel pair 110) (see FIG. 2). Even with this configuration, it is possible to improve quantum efficiency and suppress crosstalk. Furthermore, phase difference detection can be performed in the pixel pair 110.

[0085] Furthermore, each pixel 100 of the pixel pair 110 may be formed in an isosceles trapezoidal shape (see FIG. 2), which ensures that the planar shape of the pixel pair 110 is a hexagon.

[0086] Alternatively, the predetermined number of pixels 100 may include four pixels 100 (pixel set 110A) (see FIG. 9 ). This configuration can also improve quantum efficiency and suppress crosstalk. Furthermore, the pixel set 110A can perform phase difference detection in multiple directions.

[0087] Alternatively, each pixel 100 of the pixel set 110A may be formed in the shape of a right-angled trapezoid (see FIG. 9), thereby ensuring that the planar shape of the pixel set 110A is a hexagon.

[0088] Furthermore, the pixel boundary direction for each pixel set (e.g., pixel pair 110 or pixel set 110A) may be the same (see FIGS. 2 and 10 ), which can also achieve improved quantum efficiency and reduced crosstalk.

[0089] Furthermore, the pixel boundary direction for each pixel set (e.g., pixel pair 110 or pixel set 110A) may be different (see FIG. 11). Even with this configuration, it is possible to improve quantum efficiency and suppress crosstalk. Furthermore, by mixing multiple pixel boundary directions with different directions, phase difference detection can be performed in multiple directions.

[0090] Furthermore, the pixels 100 may be arranged in a DOBC configuration (see FIG. 12). Even with this configuration, it is possible to improve quantum efficiency and suppress crosstalk.

[0091] 6. Other Embodiments The configurations and processes according to the above-described embodiments (including examples and modified examples) may be implemented in various different forms other than the above-described embodiments. For example, the configurations and processes are not limited to the above-described examples and may be implemented in various forms. Furthermore, for example, the configurations, processing procedures, specific names, or information including various data and parameters shown in the above documents and drawings may be changed arbitrarily unless otherwise specified.

[0092] Furthermore, the components and processes according to the above-described embodiments (including examples and modifications) do not necessarily have to be physically configured as shown in the drawings. In other words, the specific form of distribution and integration of the components and processes is not limited to that shown in the drawings, and all or part of them may be functionally or physically distributed or integrated in any unit depending on various loads, usage conditions, etc.

[0093] Furthermore, the configurations and processes of the above-described embodiments (including examples and modified examples) may be combined as appropriate. For example, at least a part of an embodiment may be combined as appropriate with at least a part of another embodiment. Furthermore, the effects of the embodiments are merely examples and are not intended to be limiting, and other effects may also be obtained.

[0094] 7. Application Example An application example of the imaging device 10 according to any of the above-described embodiments (including examples and modifications) will be described with reference to Fig. 14. Fig. 14 is a diagram showing an application example using the imaging device 10 according to any of the above-described embodiments.

[0095] The imaging device 10 according to any of the above-described embodiments may be applied to various cases in which light, such as visible light, infrared light, ultraviolet light, X-rays, etc. For example, the imaging device 10 may be applied to various devices (electronic devices) such as those described below, or electronic devices mounted on various devices.

[0096] For example, as shown in FIG. 14 , the imaging device 10 according to any of the above-described embodiments can be used in the following applications: "devices for capturing images for viewing, such as digital cameras and portable devices with camera functions," "devices for traffic use, such as in-vehicle sensors for capturing images of the front, rear, surroundings, and interior of a vehicle for safe driving such as automatic stopping and for recognizing the driver's state, surveillance cameras for monitoring moving vehicles and roads, and distance measuring sensors for measuring distances between vehicles," "devices for home appliances, such as TVs, refrigerators, and air conditioners, for capturing images of user gestures and operating the device in accordance with the gestures," "devices for medical and healthcare use, such as endoscopes and devices for capturing blood vessel images by receiving infrared light," "devices for security use, such as surveillance cameras for crime prevention and cameras for person authentication," "devices for beauty use, such as skin measuring devices for capturing images of the skin and microscopes for capturing images of the scalp," "devices for sports use, such as action cameras and wearable cameras for sports use," and "devices for agricultural use, such as cameras for monitoring the condition of fields and crops."

[0097] The technology according to the present disclosure can be applied to various products. For example, the technology according to the present disclosure may be realized as an electronic device mounted on any type of moving body, such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, a personal mobility device, an airplane, a drone, a ship, a robot, a construction machine, or an agricultural machine (tractor). Furthermore, for example, the technology according to the present disclosure may be realized as an electronic device mounted on an endoscopic surgery system, a microsurgery system, or the like.

[0098] <7-1. Imaging Device> An imaging device 300 according to an application example will be described with reference to Fig. 15. Fig. 15 is a diagram showing an example of the configuration of the imaging device 300 according to an application example. This imaging device 300 is an example of an electronic device to which the imaging device 10 according to any of the above-described embodiments is applied. Examples of the imaging device 300 include electronic devices such as digital still cameras, video cameras, smartphones and mobile phones with imaging functions.

[0099] 15, the imaging device 300 includes an optical system 301, a shutter device 302, an imaging element (solid-state imaging device) 303, a control circuit (drive circuit) 304, a signal processing circuit 305, a monitor 306, and a memory 307. The imaging device 300 is capable of capturing still images and moving images.

[0100] The optical system 301 includes one or more lenses. The optical system 301 guides light from a subject (incident light) to the image sensor 303, and forms an image on the light receiving surface of the image sensor 303.

[0101] The shutter device 302 is disposed between the optical system 301 and the image sensor 303. The shutter device 302 controls the light irradiation period and the light blocking period for the image sensor 303 under the control of the control circuit 304.

[0102] The image sensor 303 accumulates signal charges for a certain period of time in response to light that is focused on the light receiving surface via the optical system 301 and the shutter device 302. The signal charges accumulated in the image sensor 303 are transferred in accordance with a drive signal (timing signal) supplied from the control circuit 304. As the image sensor 303, for example, the image sensor 10 according to any one of the above-described embodiments is used.

[0103] The control circuit 304 outputs a drive signal that controls the transfer operation of the image sensor 303 and the shutter operation of the shutter device 302 , thereby driving the image sensor 303 and the shutter device 302 .

[0104] The signal processing circuit 305 performs various signal processing on the signal charges output from the image sensor 303. The image (image data) obtained by the signal processing performed by the signal processing circuit 305 is supplied to a monitor 306 and also to a memory 307.

[0105] The monitor 306 displays moving or still images captured by the image sensor 303 based on the image data supplied from the signal processing circuit 305. As the monitor 306, for example, a panel-type display device such as a liquid crystal panel or an organic EL (Electro Luminescence) panel is used.

[0106] The memory 307 stores the image data supplied from the signal processing circuit 305 , that is, the image data of a moving image or a still image captured by the image sensor 303 .

[0107] Even in the imaging device 300 configured in this manner, by applying the imaging device 10 according to any of the above-mentioned embodiments to the imaging element 303, it is possible to improve quantum efficiency and suppress crosstalk.

[0108] <7-2. Distance Measuring Device> A distance measuring device 400 according to an application example will be described with reference to Fig. 16. Fig. 16 is a diagram showing an example of the configuration of the distance measuring device 400 according to an application example. This distance measuring device 400 is an example of an electronic device to which the imaging device 10 according to any of the above-described embodiments is applied.

[0109] 16, distance measuring device (distance image sensor) 400 includes a light source unit 401, an optical system 402, an image sensor (solid-state image sensor) 403, a control circuit (drive circuit) 404, a signal processing circuit 405, a monitor 406, and a memory 407. Distance measuring device 400 projects light from light source unit 401 toward an object and receives light (modulated light or pulsed light) reflected from the surface of the object, thereby obtaining a distance image according to the distance to the object.

[0110] The light source unit 401 projects light toward the subject. For example, a vertical cavity surface emitting laser (VCSEL) array that emits laser light as a surface light source, or a laser diode array in which laser diodes are arranged in a line, is used as the light source unit 401. The laser diode array is supported by a predetermined drive unit (not shown) and scanned in a direction perpendicular to the direction in which the laser diodes are arranged.

[0111] The optical system 402 includes one or more lenses. The optical system 402 guides light from a subject (incident light) to the image sensor 403, and forms an image on the light receiving surface (sensor portion) of the image sensor 403.

[0112] The image sensor 403 accumulates signal charges in response to light that is imaged on the light receiving surface via the optical system 402. A distance signal indicating a distance determined from a light receiving signal (APD OUT) output from the image sensor 403 is supplied to a signal processing circuit 405. As the image sensor 403, for example, the image sensor 10 according to any one of the above-described embodiments is used.

[0113] The control circuit 404 outputs a drive signal (control signal) that controls the operation of the light source unit 401, the image sensor 403, and the like, thereby driving the light source unit 401, the image sensor 403, and the like.

[0114] The signal processing circuit 405 performs various signal processing on the distance signal supplied from the image sensor 403. For example, the signal processing circuit 405 performs image processing (e.g., histogram processing, peak detection processing, etc.) to construct a distance image based on the distance signal. The image (image data) obtained by the signal processing performed by the signal processing circuit 405 is supplied to a monitor 406 and also to a memory 407.

[0115] The monitor 406 displays the distance image captured by the image sensor 403 based on the image data supplied from the signal processing circuit 405. The monitor 406 may be, for example, a panel display device such as a liquid crystal panel or an organic EL panel.

[0116] The memory 407 stores the image data supplied from the signal processing circuit 405 , that is, the image data of the distance image captured by the image sensor 403 .

[0117] Even in the distance measuring device 400 configured in this manner, by applying the imaging device 10 according to any of the above-mentioned embodiments to the imaging element 403, it is possible to improve quantum efficiency and suppress crosstalk.

[0118] As described above, the imaging device 10 according to any of the above-described embodiments can be implemented in various electronic devices. For example, the imaging device 10 according to any of the above-described embodiments may be installed in various electronic devices such as the imaging device 300 and the distance measuring device 400, a hard disk drive (HDD), a notebook PC (Personal Computer), a mobile device (e.g., a smartphone or a tablet PC), a PDA (Personal Digital Assistant), a wearable device, a game device, or a music device.

[0119] <8. Supplementary Notes> The present technology may also have the following configurations. (1) An imaging device including: a plurality of pixel sets, each including a predetermined number of pixels; and a plurality of lenses, one for each pixel set, wherein the plurality of pixel sets and the plurality of lenses are arranged in a honeycomb array in a planar view, and each of the plurality of pixel sets is formed in a hexagonal shape in a planar view. (2) The imaging device described in (1), wherein the pixels are formed in a trapezoidal shape in a planar view. (3) The imaging device described in (2), wherein the pixels have separation portions provided at boundaries between the pixels and separating the pixels, and the separation portions are formed in a trapezoidal shape in a planar view. (4) The imaging device described in (3), wherein the pixels further have separation regions connected to the separation portions and separating the pixels, and the separation regions are formed in a rectangular shape in a planar view. (5) The imaging device according to (2), wherein the pixel set has a light-shielding layer surrounding the pixel set in a planar view, and the light-shielding layer is formed in a hexagonal shape in a planar view. (6) The imaging device according to (5), wherein the pixels further have separation sections provided at boundaries of the pixels and separating the pixels, and the separation sections are formed in a rectangular shape in a planar view. (7) The imaging device according to (6), wherein the pixels further have separation regions connected to the separation sections and separating the pixels, and the separation regions are formed in a rectangular shape in a planar view. (8) The imaging device according to any one of (1) to (7), wherein the lens is formed in an elliptical shape or a circular shape in a planar view. (9) The imaging device according to any one of (1) to (8), wherein the predetermined number of pixels is two pixels. (10) The imaging device according to (9), wherein each of the two pixels is formed in an isosceles trapezoidal shape. (11) The imaging device according to any one of (1) to (8), wherein the predetermined number of pixels is four pixels. (12) The imaging device according to (11), wherein each of the four pixels is formed in a right-angled trapezoidal shape. (13) The imaging device according to any one of (1) to (12), wherein a pixel boundary direction for each pixel set is the same.(14) The imaging device according to any one of (1) to (12), wherein a pixel boundary direction for each pixel set is different. (15) The imaging device according to any one of (1) to (14), wherein the plurality of pixels are arranged using Deca-Octa Bayer Coding (DOBC). (16) An electronic device comprising an imaging device, the imaging device having: a plurality of pixel sets, each including a predetermined number of pixels; and a plurality of lenses, one for each pixel set, the plurality of pixel sets and the plurality of lenses being arranged in a honeycomb array in a planar view, and each of the plurality of pixel sets being formed in a hexagonal shape in a planar view. (17) An electronic device comprising the imaging device according to any one of (1) to (15). (18) A method for manufacturing an imaging device, comprising manufacturing the imaging device according to any one of (1) to (15).

[0120] 10 Imaging device 11 Pixel array section 11A Pixel array section 12 Vertical drive section 13 Column signal processing section 14 Control section 15 Signal line 16 Signal line 17 Signal line 18 Signal line 100 Pixel 101 Lens 110 Pixel pair 110A Pixel set 111 Semiconductor substrate 112 Light receiving section 113 Separation section 114 Separation region 121 Multilayer wiring layer 122 Wiring layer 123 Wiring layer 124 Wiring layer 125 Interlayer insulating layer 131 Color filter 132 Light-shielding layer 300 Imaging device 400 Distance measuring device A1 Trapezoidal region A2 Shape transition region A3 Square region A4 Hexagonal region A5 Square region B1 Pixel block B1a Pixel block B1b Pixel block B1c Pixel block B1d Pixel block DP Image data G1 Image G2 Image G3 Image H1 Subject MA Imaging mode MB Imaging mode MC Imaging mode S Light incident side S1 Front surface S2 Back surface T1 Pixel transistor U1 Pixel unit

Claims

1. An imaging device comprising: a plurality of pixel sets, each including a predetermined number of pixels; and a plurality of lenses, one for each of the pixel sets; the plurality of pixel sets and the plurality of lenses are arranged in a honeycomb array in a planar view; and each of the plurality of pixel sets is formed in a hexagonal shape in a planar view.

2. The imaging device according to claim 1, wherein the pixels are formed in a trapezoidal shape in a planar view.

3. The imaging device according to claim 2, wherein the pixels have separation sections provided at the boundaries of the pixels and separating the pixels, the separation sections being formed in a trapezoidal shape in a planar view.

4. The imaging device according to claim 3, wherein the pixels further have an isolation region connected to the isolation section and isolating the pixels, the isolation region being formed in a rectangular shape in a planar view.

5. The imaging device according to claim 2, wherein the pixel set has a light-shielding layer surrounding the pixel set in a planar view, the light-shielding layer being formed in a hexagonal shape in a planar view.

6. The imaging device according to claim 5, wherein the pixels further have a separation portion provided at a boundary between the pixels and separating the pixels, the separation portion being formed in a rectangular shape in a plan view.

7. The imaging device according to claim 6, wherein the pixels further have an isolation region connected to the isolation section and isolating the pixels, the isolation region being formed in a rectangular shape in a planar view.

8. The imaging device according to claim 1, wherein the lens is formed in an elliptical or circular shape in a plan view.

9. The imaging device according to claim 1, wherein the predetermined number of pixels is two pixels.

10. The imaging device according to claim 9, wherein each of the two pixels is formed in an isosceles trapezoid shape.

11. The imaging device according to claim 1, wherein the predetermined number of pixels is four pixels.

12. The imaging device according to claim 11, wherein each of the four pixels is formed in a right-angled trapezoidal shape.

13. The imaging device according to claim 1, wherein the pixel boundary direction for each of the pixel sets is the same.

14. The imaging device according to claim 1, wherein the pixel boundary directions for each of the pixel sets are different.

15. The imaging device according to claim 1, wherein the plurality of pixels are arranged in a Deca-Octa Bayer Coding (DOBC) format.

16. An electronic device comprising an imaging device, the imaging device having a plurality of pixel sets, each including a predetermined number of pixels, and a plurality of lenses, one for each of the pixel sets, the plurality of pixel sets and the plurality of lenses being arranged in a honeycomb array in a planar view, and each of the plurality of pixel sets being formed in a hexagonal shape in a planar view.

Images